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Yang B, Bhujel B, Chica DG, Telford EJ, Roy X, Ibrahim F, Chshiev M, Cosset-Chéneau M, Wees BJV. Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures. Nat Commun 2024; 15:4459. [PMID: 38796433 PMCID: PMC11128003 DOI: 10.1038/s41467-024-48809-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 05/15/2024] [Indexed: 05/28/2024] Open
Abstract
The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 - 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from - 50% to + 69% in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices.
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Affiliation(s)
- Boxuan Yang
- Zernike Institute for Advanced Materials, University of Groningen, 9747, AG, Groningen, The Netherlands.
| | - Bibek Bhujel
- Zernike Institute for Advanced Materials, University of Groningen, 9747, AG, Groningen, The Netherlands
| | - Daniel G Chica
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Evan J Telford
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Fatima Ibrahim
- Univ. Grenoble Alpes, CEA, CNRS, Spintec, Grenoble, 38000, France
| | - Mairbek Chshiev
- Univ. Grenoble Alpes, CEA, CNRS, Spintec, Grenoble, 38000, France
- Institut Universitaire de France (IUF), Paris, 75231, France
| | - Maxen Cosset-Chéneau
- Zernike Institute for Advanced Materials, University of Groningen, 9747, AG, Groningen, The Netherlands.
| | - Bart J van Wees
- Zernike Institute for Advanced Materials, University of Groningen, 9747, AG, Groningen, The Netherlands
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2
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Luo Z, Yu Z, Lu X, Niu W, Yu Y, Yao Y, Tian F, Tan CL, Sun H, Gao L, Qin W, Xu Y, Zhao Q, Song XX. Van der Waals Magnetic Electrode Transfer for Two-Dimensional Spintronic Devices. NANO LETTERS 2024; 24:6183-6191. [PMID: 38728596 DOI: 10.1021/acs.nanolett.4c01885] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2024]
Abstract
Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to induce defects at the interfaces. Meanwhile, the difficulties in picking up FM metals with strong adhesion and in achieving conductance match between FM electrodes and spin transport channels make it challenging to fabricate high-quality 2D spintronic devices using metal transfer techniques. Here, we report a solvent-free magnetic electrode transfer technique that employs a graphene layer to assist in the transfer of FM metals. It also serves as part of the FM electrode after transfer for optimizing spin injection, which enables the realization of spin valves with excellent performance based on various 2D materials. In addition to two-terminal devices, we demonstrate that the technique is applicable for four-terminal spin valves with nonlocal geometry. Our results provide a promising future of realizing 2D spintronic applications using the developed magnetic electrode transfer technique.
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Affiliation(s)
- Zhongzhong Luo
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Zhihao Yu
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Xiangqian Lu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Wei Niu
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yao Yu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yu Yao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Fuguo Tian
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Chee Leong Tan
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Huabin Sun
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Li Gao
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Wei Qin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yong Xu
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Qiang Zhao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Xiang-Xiang Song
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China Suzhou 215123, China
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3
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Ziebel ME, Feuer ML, Cox J, Zhu X, Dean CR, Roy X. CrSBr: An Air-Stable, Two-Dimensional Magnetic Semiconductor. NANO LETTERS 2024; 24:4319-4329. [PMID: 38567828 DOI: 10.1021/acs.nanolett.4c00624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/18/2024]
Abstract
The discovery of magnetic order at the 2D limit has sparked new exploration of van der Waals magnets for potential use in spintronics, magnonics, and quantum information applications. However, many of these materials feature low magnetic ordering temperatures and poor air stability, limiting their fabrication into practical devices. In this Mini-Review, we present a promising material for fundamental studies and functional use: CrSBr, an air-stable, two-dimensional magnetic semiconductor. Our discussion highlights experimental research on bulk CrSBr, including quasi-1D semiconducting properties, A-type antiferromagnetic order (TN = 132 K), and strong coupling between its electronic and magnetic properties. We then discuss the behavior of monolayer and few-layer flakes and present a perspective on promising avenues for further studies on CrSBr.
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Affiliation(s)
- Michael E Ziebel
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Margalit L Feuer
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Jordan Cox
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Xiaoyang Zhu
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Cory R Dean
- Columbia University, Department of Physics, New York, New York 10027, United States
| | - Xavier Roy
- Columbia University, Department of Chemistry, New York, New York 10027, United States
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4
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Ngaloy R, Zhao B, Ershadrad S, Gupta R, Davoudiniya M, Bainsla L, Sjöström L, Hoque MA, Kalaboukhov A, Svedlindh P, Sanyal B, Dash SP. Strong In-Plane Magnetization and Spin Polarization in (Co 0.15Fe 0.85) 5GeTe 2/Graphene van der Waals Heterostructure Spin-Valve at Room Temperature. ACS NANO 2024. [PMID: 38330915 PMCID: PMC10883121 DOI: 10.1021/acsnano.3c07462] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Van der Waals (vdW) magnets are promising, because of their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, so far, most of the vdW magnet-based spintronic devices have been limited to cryogenic temperatures with magnetic anisotropies favoring out-of-plane or canted orientation of the magnetization. Here, we report beyond room-temperature lateral spin-valve devices with strong in-plane magnetization and spin polarization of the vdW ferromagnet (Co0.15Fe0.85)5GeTe2 (CFGT) in heterostructures with graphene. Density functional theory (DFT) calculations show that the magnitude of the anisotropy depends on the Co concentration and is caused by the substitution of Co in the outermost Fe layer. Magnetization measurements reveal the above room-temperature ferromagnetism in CFGT and clear remanence at room temperature. Heterostructures consisting of CFGT nanolayers and graphene were used to experimentally realize basic building blocks for spin valve devices, such as efficient spin injection and detection. Further analysis of spin transport and Hanle spin precession measurements reveals a strong in-plane magnetization with negative spin polarization at the interface with graphene, which is supported by the calculated spin-polarized density of states of CFGT. The in-plane magnetization of CFGT at room temperature proves its usefulness in graphene lateral spin-valve devices, thus revealing its potential application in spintronic technologies.
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Affiliation(s)
- Roselle Ngaloy
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Bing Zhao
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Soheil Ershadrad
- Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
| | - Rahul Gupta
- Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
- Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden
| | - Masoumeh Davoudiniya
- Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
| | - Lakhan Bainsla
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
- Department of Physics, Indian Institute of Technology Ropar, Roopnagar 140001, Punjab, India
| | - Lars Sjöström
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Md Anamul Hoque
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Alexei Kalaboukhov
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Peter Svedlindh
- Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden
| | - Biplab Sanyal
- Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
| | - Saroj Prasad Dash
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
- Graphene Center, Chalmers University of Technology, SE-41296 Göteborg, Sweden
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5
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Hu J, Han Y, Chi X, Omar GJ, Al Ezzi MME, Gou J, Yu X, Andrivo R, Watanabe K, Taniguchi T, Wee ATS, Qiao Z, Ariando A. Tunable Spin-Polarized States in Graphene on a Ferrimagnetic Oxide Insulator. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305763. [PMID: 37811809 DOI: 10.1002/adma.202305763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 10/01/2023] [Indexed: 10/10/2023]
Abstract
Spin-polarized two-dimensional (2D) materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, this work demonstrates the emergence of robust spin-polarization in graphene with large and tunable spin-splitting energy of up to 132 meV at zero applied magnetic fields. The spin polarization is induced through a magnetic exchange interaction between graphene and the underlying ferrimagnetic oxide insulating layer, Tm3 Fe5 O12 , as confirmed by its X-ray magnetic circular dichroism (XMCD). The spin-splitting energies are directly measured and visualized by the shift in their Landau-fan diagram mapped by analyzing the measured Shubnikov-de-Haas (SdH) oscillations as a function of applied electric fields, showing consistent fit with the first-principles and machine learning calculations. Further, the observed spin-splitting energies can be tuned over a broad range between 98 and 166 meV by field cooling. The methods and results are applicable to other 2D (magnetic) materials and heterostructures, and offer great potential for developing next-generation spin logic and memory devices.
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Affiliation(s)
- Junxiong Hu
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
| | - Yulei Han
- International Center for Quantum Design of Functional Materials, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Department of Physics, Fuzhou University, Fuzhou, Fujian, 350108, China
| | - Xiao Chi
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Ganesh Ji Omar
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Mohammed Mohammed Esmail Al Ezzi
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
| | - Jian Gou
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Xiaojiang Yu
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Rusydi Andrivo
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0044, Japan
| | - Andrew Thye Shen Wee
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Zhenhua Qiao
- International Center for Quantum Design of Functional Materials, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - A Ariando
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
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6
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Serati de Brito C, Faria Junior PE, Ghiasi TS, Ingla-Aynés J, Rabahi CR, Cavalini C, Dirnberger F, Mañas-Valero S, Watanabe K, Taniguchi T, Zollner K, Fabian J, Schüller C, van der Zant HSJ, Gobato YG. Charge Transfer and Asymmetric Coupling of MoSe 2 Valleys to the Magnetic Order of CrSBr. NANO LETTERS 2023. [PMID: 38019289 DOI: 10.1021/acs.nanolett.3c03431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in nonmagnetic TMDs. Here, we report magneto photoluminescence (PL) investigations of monolayer (ML) MoSe2 on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe2, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley g-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first-principles calculations suggest that MoSe2/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices.
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Affiliation(s)
- Caique Serati de Brito
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany
| | - Paulo E Faria Junior
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - Talieh S Ghiasi
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Josep Ingla-Aynés
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - César Ricardo Rabahi
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
| | - Camila Cavalini
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
| | - Florian Dirnberger
- Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität, 01069 Dresden, Germany
| | - Samuel Mañas-Valero
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna 46980, Spain
| | - Kenji Watanabe
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Klaus Zollner
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - Christian Schüller
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany
| | - Herre S J van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Yara Galvão Gobato
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
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7
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Strasdas J, Pestka B, Rybak M, Budniak AK, Leuth N, Boban H, Feyer V, Cojocariu I, Baranowski D, Avila J, Dudin P, Bostwick A, Jozwiak C, Rotenberg E, Autieri C, Amouyal Y, Plucinski L, Lifshitz E, Birowska M, Morgenstern M. Electronic Band Structure Changes across the Antiferromagnetic Phase Transition of Exfoliated MnPS 3 Flakes Probed by μ-ARPES. NANO LETTERS 2023; 23:10342-10349. [PMID: 37922394 DOI: 10.1021/acs.nanolett.3c02906] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/05/2023]
Abstract
Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, presumably due to their photochemical sensitivity. Here, we provide micrometer-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS3 above and below the Néel temperature down to one monolayer. Favorable comparison with density functional theory calculations enables identifying the orbital character of the observed bands. Consistently, we find pronounced changes across the Néel temperature for bands consisting of Mn 3d and 3p levels of adjacent S atoms. The deduced orbital mixture indicates that the superexchange is relevant for the magnetic interaction. There are only minor changes between monolayer and thicker films, demonstrating the predominant 2D character of MnPS3. The novel access is transferable to other MPX3 materials (M: transition metal, P: phosphorus, X: chalcogenide), providing several antiferromagnetic arrangements.
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Affiliation(s)
- Jeff Strasdas
- II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52074 Aachen, Germany
| | - Benjamin Pestka
- II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52074 Aachen, Germany
| | - Miłosz Rybak
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, WybrzeŻe Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Adam K Budniak
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Niklas Leuth
- II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52074 Aachen, Germany
| | - Honey Boban
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - Vitaliy Feyer
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - Iulia Cojocariu
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - Daniel Baranowski
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - José Avila
- Synchrotron-SOLEIL, Université Paris-Saclay, Saint-Aubin, BP48, Gif sur Yvette, Paris F91192, France
| | - Pavel Dudin
- Synchrotron-SOLEIL, Université Paris-Saclay, Saint-Aubin, BP48, Gif sur Yvette, Paris F91192, France
| | - Aaron Bostwick
- Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, United States
| | - Chris Jozwiak
- Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, United States
| | - Eli Rotenberg
- Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, United States
| | - Carmine Autieri
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Yaron Amouyal
- Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Lukasz Plucinski
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - Efrat Lifshitz
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Magdalena Birowska
- Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Pasteura St. 5, 02-093 Warsaw, Poland
| | - Markus Morgenstern
- II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52074 Aachen, Germany
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8
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Lyons TP, Puebla J, Yamamoto K, Deacon RS, Hwang Y, Ishibashi K, Maekawa S, Otani Y. Acoustically Driven Magnon-Phonon Coupling in a Layered Antiferromagnet. PHYSICAL REVIEW LETTERS 2023; 131:196701. [PMID: 38000412 DOI: 10.1103/physrevlett.131.196701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Accepted: 09/25/2023] [Indexed: 11/26/2023]
Abstract
Harnessing the causal relationships between mechanical and magnetic properties of Van der Waals materials presents a wealth of untapped opportunity for scientific and technological advancement, from precision sensing to novel memories. This can, however, only be exploited if the means exist to efficiently interface with the magnetoelastic interaction. Here, we demonstrate acoustically driven spin-wave resonance in a crystalline antiferromagnet, chromium trichloride, via surface acoustic wave irradiation. The resulting magnon-phonon coupling is found to depend strongly on sample temperature and external magnetic field orientation, and displays a high sensitivity to extremely weak magnetic anisotropy fields in the few mT range. Our work demonstrates a natural pairing between power-efficient strain-wave technology and the excellent mechanical properties of Van der Waals materials, representing a foothold toward widespread future adoption of dynamic magnetoacoustics.
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Affiliation(s)
- Thomas P Lyons
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
| | - Jorge Puebla
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
| | - Kei Yamamoto
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
| | - Russell S Deacon
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Advanced Device Laboratory, RIKEN, Wako-shi, Saitama 351-0198, Japan
| | - Yunyoung Hwang
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Koji Ishibashi
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Advanced Device Laboratory, RIKEN, Wako-shi, Saitama 351-0198, Japan
| | - Sadamichi Maekawa
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
- Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yoshichika Otani
- Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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9
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Jo J, Peisen Y, Yang H, Mañas-Valero S, Baldoví JJ, Lu Y, Coronado E, Casanova F, Bergeret FS, Gobbi M, Hueso LE. Local control of superconductivity in a NbSe 2/CrSBr van der Waals heterostructure. Nat Commun 2023; 14:7253. [PMID: 37945570 PMCID: PMC10636142 DOI: 10.1038/s41467-023-43111-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Accepted: 10/31/2023] [Indexed: 11/12/2023] Open
Abstract
Two-dimensional magnets and superconductors are emerging as tunable building-blocks for quantum computing and superconducting spintronic devices, and have been used to fabricate all two-dimensional versions of traditional devices, such as Josephson junctions. However, novel devices enabled by unique features of two-dimensional materials have not yet been demonstrated. Here, we present NbSe2/CrSBr van der Waals superconducting spin valves that exhibit infinite magnetoresistance and nonreciprocal charge transport. These responses arise from a unique metamagnetic transition in CrSBr, which controls the presence of localized stray fields suitably oriented to suppress the NbSe2 superconductivity in nanoscale regions and to break time reversal symmetry. Moreover, by integrating different CrSBr crystals in a lateral heterostructure, we demonstrate a superconductive spin valve characterized by multiple stable resistance states. Our results show how the unique physical properties of layered materials enable the realization of high-performance quantum devices based on novel working principles.
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Affiliation(s)
- Junhyeon Jo
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
| | - Yuan Peisen
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Haozhe Yang
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - José J Baldoví
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - Yao Lu
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
| | - F Sebastian Bergeret
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain
- Donostia International Physics Center (DIPC), E-20018, Donostia-San Sebastián, Spain
| | - Marco Gobbi
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
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10
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Liu S, Malik IA, Zhang VL, Yu T. Lightning the Spin: Harnessing the Potential of 2D Magnets in Opto-Spintronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2306920. [PMID: 37905890 DOI: 10.1002/adma.202306920] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2023] [Revised: 09/20/2023] [Indexed: 11/02/2023]
Abstract
Since the emergence of 2D magnets in 2017, the diversity of these materials has greatly expanded. Their 2D nature (atomic-scale thickness) endows these magnets with strong magnetic anisotropy, layer-dependent and switchable magnetic order, and quantum-confined quasiparticles, which distinguish them from conventional 3D magnetic materials. Moreover, the 2D geometry facilitates light incidence for opto-spintronic applications and potential on-chip integration. In analogy to optoelectronics based on optical-electronic interactions, opto-spintronics use light-spin interactions to process spin information stored in the solid state. In this review, opto-spintronics is divided into three types with respect to the wavelengths of radiation interacting with 2D magnets: 1) GHz (microwave) to THz (mid-infrared), 2) visible, and 3) UV to X-rays. It is focused on the recent research advancements on the newly discovered mechanisms of light-spin interactions in 2D magnets and introduces the potential design of novel opto-spintronic applications based on these interactions.
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Affiliation(s)
- Sheng Liu
- School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | | | - Vanessa Li Zhang
- School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Ting Yu
- School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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11
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Melchakova IA, Oyeniyi GT, Polyutov SP, Avramov PV. Spin Polarization and Flat Bands in Eu-Doped Nanoporous and Twisted Bilayer Graphenes. MICROMACHINES 2023; 14:1889. [PMID: 37893326 PMCID: PMC10609095 DOI: 10.3390/mi14101889] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Revised: 09/25/2023] [Accepted: 09/28/2023] [Indexed: 10/29/2023]
Abstract
Advanced two-dimensional spin-polarized heterostructures based on twisted (TBG) and nanoporous (NPBG) bilayer graphenes doped with Eu ions were theoretically proposed and studied using Periodic Boundary Conditions Density Functional theory electronic structure calculations. The significant polarization of the electronic states at the Fermi level was discovered for both Eu/NPBG(AA) and Eu/TBG lattices. Eu ions' chemi- and physisorption to both graphenes may lead to structural deformations, drop of symmetry of low-dimensional lattices, interlayer fusion, and mutual slides of TBG graphene fragments. The frontier bands in the valence region at the vicinity of the Fermi level of both spin-polarized 2D Eu/NPBG(AA) and Eu/TBG lattices clearly demonstrate flat dispersion laws caused by localized electronic states formed by TBG Moiré patterns, which could lead to strong electron correlations and the formation of exotic quantum phases.
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Affiliation(s)
- Iu. A. Melchakova
- School of Physics and Engineering, ITMO University, 197101 St. Petersburg, Russia;
| | - G. T. Oyeniyi
- Department of Chemistry, Kyungpook National University, Daegu 41566, Republic of Korea;
| | - S. P. Polyutov
- International Research Center of Spectroscopy and Quantum Chemistry (IRC SQC), Siberian Federal University, Svobodniy pr. 79/10, 600041 Krasnoyarsk, Russia;
| | - P. V. Avramov
- Department of Chemistry, Kyungpook National University, Daegu 41566, Republic of Korea;
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12
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Xu H, Jia K, Huang Y, Meng F, Zhang Q, Zhang Y, Cheng C, Lan G, Dong J, Wei J, Feng J, He C, Yuan Z, Zhu M, He W, Wan C, Wei H, Wang S, Shao Q, Gu L, Coey M, Shi Y, Zhang G, Han X, Yu G. Electrical detection of spin pumping in van der Waals ferromagnetic Cr 2Ge 2Te 6 with low magnetic damping. Nat Commun 2023; 14:3824. [PMID: 37380642 DOI: 10.1038/s41467-023-39529-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Accepted: 06/15/2023] [Indexed: 06/30/2023] Open
Abstract
The discovery of magnetic order in atomically-thin van der Waals materials has strengthened the alliance between spintronics and two-dimensional materials. An important use of magnetic two-dimensional materials in spintronic devices, which has not yet been demonstrated, would be for coherent spin injection via the spin-pumping effect. Here, we report spin pumping from Cr2Ge2Te6 into Pt or W and detection of the spin current by inverse spin Hall effect. The magnetization dynamics of the hybrid Cr2Ge2Te6/Pt system are measured, and a magnetic damping constant of ~ 4-10 × 10-4 is obtained for thick Cr2Ge2Te6 flakes, a record low for ferromagnetic van der Waals materials. Moreover, a high interface spin transmission efficiency (a spin mixing conductance of 2.4 × 1019/m2) is directly extracted, which is instrumental in delivering spin-related quantities such as spin angular momentum and spin-orbit torque across an interface of the van der Waals system. The low magnetic damping that promotes efficient spin current generation together with high interfacial spin transmission efficiency suggests promising applications for integrating Cr2Ge2Te6 into low-temperature two-dimensional spintronic devices as the source of coherent spin or magnon current.
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Affiliation(s)
- Hongjun Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Ke Jia
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Fanqi Meng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chen Cheng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guibin Lan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jing Dong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinwu Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China
| | - Jiafeng Feng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing, 100875, China
| | - Zhe Yuan
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Mingliang Zhu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Wenqing He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hongxiang Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shouguo Wang
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, China
| | - Qiming Shao
- Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Michael Coey
- School of Physics and CRANN, Trinity College, Dublin, 2, Ireland
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
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13
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Lau CS, Das S, Verzhbitskiy IA, Huang D, Zhang Y, Talha-Dean T, Fu W, Venkatakrishnarao D, Johnson Goh KE. Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications. ACS NANO 2023. [PMID: 37257134 DOI: 10.1021/acsnano.3c03455] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
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Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yiyu Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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14
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Zhao B, Ngaloy R, Ghosh S, Ershadrad S, Gupta R, Ali K, Hoque AM, Karpiak B, Khokhriakov D, Polley C, Thiagarajan B, Kalaboukhov A, Svedlindh P, Sanyal B, Dash SP. A Room-Temperature Spin-Valve with van der Waals Ferromagnet Fe 5 GeTe 2 /Graphene Heterostructure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209113. [PMID: 36641649 DOI: 10.1002/adma.202209113] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
The discovery of van der Waals (vdW) magnets opened a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW ferromagnets are limited to cryogenic temperatures, inhibiting their broader practical applications. Here, the robust room-temperature operation of lateral spin-valve devices using the vdW itinerant ferromagnet Fe5 GeTe2 in heterostructures with graphene is demonstrated. The room-temperature spintronic properties of Fe5 GeTe2 are measured at the interface with graphene with a negative spin polarization. Lateral spin-valve and spin-precession measurements provide unique insights by probing the Fe5 GeTe2 /graphene interface spintronic properties via spin-dynamics measurements, revealing multidirectional spin polarization. Density functional theory calculations in conjunction with Monte Carlo simulations reveal significantly canted Fe magnetic moments in Fe5 GeTe2 along with the presence of negative spin polarization at the Fe5 GeTe2 /graphene interface. These findings open opportunities for vdW interface design and applications of vdW-magnet-based spintronic devices at ambient temperatures.
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Affiliation(s)
- Bing Zhao
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Roselle Ngaloy
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Sukanya Ghosh
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Soheil Ershadrad
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Rahul Gupta
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
- Department of Materials Science and Engineering, Uppsala University, Box 35, Uppsala, SE-751 03, Sweden
| | - Khadiza Ali
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
- MAX IV Laboratory, Lund University, Lund, SE-221 00, Sweden
| | - Anamul Md Hoque
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Bogdan Karpiak
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Dmitrii Khokhriakov
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Craig Polley
- MAX IV Laboratory, Lund University, Lund, SE-221 00, Sweden
| | | | - Alexei Kalaboukhov
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Peter Svedlindh
- Department of Materials Science and Engineering, Uppsala University, Box 35, Uppsala, SE-751 03, Sweden
| | - Biplab Sanyal
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Saroj P Dash
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
- Graphene Center, Chalmers University of Technology, Göteborg, SE-41296, Sweden
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15
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Sokolov IS, Averyanov DV, Parfenov OE, Taldenkov AN, Rybin MG, Tokmachev AM, Storchak VG. Proximity Coupling of Graphene to a Submonolayer 2D Magnet. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2301295. [PMID: 36971277 DOI: 10.1002/smll.202301295] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2023] [Revised: 02/27/2023] [Indexed: 06/18/2023]
Abstract
Imprinting magnetism into graphene may lead to unconventional electron states and enable the design of spin logic devices with low power consumption. The ongoing active development of 2D magnets suggests their coupling with graphene to induce spin-dependent properties via proximity effects. In particular, the recent discovery of submonolayer 2D magnets on surfaces of industrial semiconductors provides an opportunity to magnetize graphene coupled with silicon. Here, synthesis and characterization of large-area graphene/Eu/Si(001) heterostructures combining graphene with a submonolayer magnetic superstructure of Eu on silicon are reported. Eu intercalation at the interface of the graphene/Si(001) system results in a Eu superstructure different from those formed on pristine Si in terms of symmetry. The resulting system graphene/Eu/Si(001) exhibits 2D magnetism with the transition temperature controlled by low magnetic fields. Negative magnetoresistance and the anomalous Hall effect in the graphene layer provide evidence for spin polarization of the carriers. Most importantly, the graphene/Eu/Si system seeds a class of graphene heterostructures based on submonolayer magnets aiming at applications in graphene spintronics.
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Affiliation(s)
- Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Maxim G Rybin
- Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov St., Moscow, 119991, Russia
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
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16
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He X, Zhang C, Zheng D, Li P, Xiao JQ, Zhang X. Nonlocal Spin Valves Based on Graphene/Fe 3GeTe 2 van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:9649-9655. [PMID: 36753695 PMCID: PMC9951179 DOI: 10.1021/acsami.2c21918] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Accepted: 01/25/2023] [Indexed: 06/18/2023]
Abstract
With recent advances in two-dimensional (2D) ferromagnets with enhanced Curie temperatures, it is possible to develop all-2D spintronic devices with high-quality interfaces using 2D ferromagnets. In this study, we have successfully fabricated nonlocal spin valves with Fe3GeTe2 (FGT) as the spin source and detector and multilayer graphene as the spin transport channel. The nonlocal spin transport signal was found to strongly depend on temperature and disappear at a temperature below the Curie temperature of the FGT flakes, which stemmed from the temperature-dependent ferromagnetism of FGT. The spin injection efficiency was estimated to be about 1%, close to that of conventional nonlocal spin valves with transparent contacts between ferromagnetic electrodes and the graphene channel. In addition, the spin transport signal was found to depend on the direction of the magnetic field and the magnitude of the current, which was due to the strong perpendicular magnetic anisotropy of FGT and the thermal effect, respectively. Our results provide opportunities to extend the applications of van der Waals heterostructures in spintronic devices.
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Affiliation(s)
- Xin He
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Chenhui Zhang
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Peng Li
- State
Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of
China, Chengdu 610054, China
| | - John Q. Xiao
- Department
of Physics and Astronomy, University of
Delaware, Newark, Delaware 19716, United States
| | - Xixiang Zhang
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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17
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Zatko V, Galceran R, Galbiati M, Peiro J, Godel F, Kern LM, Perconte D, Ibrahim F, Hallal A, Chshiev M, Martinez B, Frontera C, Balcells L, Kidambi PR, Robertson J, Hofmann S, Collin S, Petroff F, Martin MB, Dlubak B, Seneor P. Artificial Graphene Spin Polarized Electrode for Magnetic Tunnel Junctions. NANO LETTERS 2023; 23:34-41. [PMID: 36535029 PMCID: PMC10009810 DOI: 10.1021/acs.nanolett.2c03113] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Revised: 11/24/2022] [Indexed: 06/17/2023]
Abstract
2D materials offer the ability to expose their electronic structure to manipulations by a proximity effect. This could be harnessed to craft properties of 2D interfaces and van der Waals heterostructures in devices and quantum materials. We explore the possibility to create an artificial spin polarized electrode from graphene through proximity interaction with a ferromagnetic insulator to be used in a magnetic tunnel junction (MTJ). Ferromagnetic insulator/graphene artificial electrodes were fabricated and integrated in MTJs based on spin analyzers. Evidence of the emergence of spin polarization in proximitized graphene layers was observed through the occurrence of tunnel magnetoresistance. We deduced a spin dependent splitting of graphene's Dirac band structure (∼15 meV) induced by the proximity effect, potentially leading to full spin polarization and opening the way to gating. The extracted spin signals illustrate the potential of 2D quantum materials based on proximity effects to craft spintronics functionalities, from vertical MTJs memory cells to logic circuits.
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Affiliation(s)
- Victor Zatko
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Regina Galceran
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
- CSIC
and BIST, Campus UAB, Catalan Institute
of Nanoscience and Nanotechnology (ICN2), Bellaterra, 08193Barcelona, Spain
| | - Marta Galbiati
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Julian Peiro
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Florian Godel
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Lisa-Marie Kern
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - David Perconte
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Fatima Ibrahim
- Univ.
Grenoble Alpes, CEA, CNRS, Spintec, 38000Grenoble, France
| | - Ali Hallal
- Univ.
Grenoble Alpes, CEA, CNRS, Spintec, 38000Grenoble, France
| | - Mairbek Chshiev
- Univ.
Grenoble Alpes, CEA, CNRS, Spintec, 38000Grenoble, France
- Institut
Universitaire de France, 75231Paris, France
| | - Benjamin Martinez
- Institut
de Ciencia de Materials de Barcelona, ICMAB-CSIC,
Campus UAB, 08193Bellaterra, Spain
| | - Carlos Frontera
- Institut
de Ciencia de Materials de Barcelona, ICMAB-CSIC,
Campus UAB, 08193Bellaterra, Spain
| | - Lluìs Balcells
- Institut
de Ciencia de Materials de Barcelona, ICMAB-CSIC,
Campus UAB, 08193Bellaterra, Spain
| | - Piran R. Kidambi
- Department
of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, Tennessee37212, United States
| | - John Robertson
- Department
of Engineering, University of Cambridge, CambridgeCB3 0FA, United Kingdom
| | - Stephan Hofmann
- Department
of Engineering, University of Cambridge, CambridgeCB3 0FA, United Kingdom
| | - Sophie Collin
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Frédéric Petroff
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Marie-Blandine Martin
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Bruno Dlubak
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
| | - Pierre Seneor
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767Palaiseau, France
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18
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Tseng CC, Song T, Jiang Q, Lin Z, Wang C, Suh J, Watanabe K, Taniguchi T, McGuire MA, Xiao D, Chu JH, Cobden DH, Xu X, Yankowitz M. Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators. NANO LETTERS 2022; 22:8495-8501. [PMID: 36279401 DOI: 10.1021/acs.nanolett.2c02931] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The extreme versatility of van der Waals materials originates from their ability to exhibit new electronic properties when assembled in close proximity to dissimilar crystals. For example, although graphene is inherently nonmagnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway toward achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI3, CrBr3, and CrCl3). Surprisingly, we are unable to detect a magnetic exchange field in the graphene but instead discover proximity effects featuring unprecedented gate tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator and further exhibits a variety of atypical gate-dependent transport features. The charge transfer can additionally be altered upon switching the magnetic states of the nearest CrI3 layers. Our results provide a roadmap for exploiting proximity effects arising in graphene coupled to magnetic insulators.
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Affiliation(s)
| | | | | | | | | | | | | | | | - Michael A McGuire
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Di Xiao
- Pacific Northwest National Laboratory, Richland, Washington99354, United States
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19
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Liu W, Guo X, Schwartz J, Xie H, Dhale NU, Sung SH, Kondusamy ALN, Wang X, Zhao H, Berman D, Hovden R, Zhao L, Lv B. A Three-Stage Magnetic Phase Transition Revealed in Ultrahigh-Quality van der Waals Bulk Magnet CrSBr. ACS NANO 2022; 16:15917-15926. [PMID: 36149801 DOI: 10.1021/acsnano.2c02896] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
van der Waals (vdW) magnets are receiving ever-growing attention nowadays due to their significance in both fundamental research on low-dimensional magnetism and potential applications in spintronic devices. The high crystalline quality of vdW magnets is the key to maintaining intrinsic magnetic and electronic properties, especially when exfoliated down to the two-dimensional limit. Here, ultrahigh-quality air-stable vdW CrSBr crystals are synthesized using the direct solid-vapor synthesis method. The high single crystallinity and spatial homogeneity have been thoroughly evidenced at length scales from submm to atomic resolution by X-ray diffraction, second harmonic generation, and scanning transmission electron microscopy. More importantly, specific heat measurements of ultrahigh-quality CrSBr crystals show three thermodynamic anomalies at 185, 156, and 132 K, revealing a stage-by-stage development of the magnetic order upon cooling, which is also corroborated with the magnetization and transport results. Our ultrahigh-quality CrSBr can further be exfoliated down to monolayers and bilayers easily, providing the building blocks of heterostructures for spintronic and magneto-optoelectronic applications.
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Affiliation(s)
- Wenhao Liu
- Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Xiaoyu Guo
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Jonathan Schwartz
- Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Hongchao Xie
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Nikhil Uday Dhale
- Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Suk Hyun Sung
- Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | | | - Xiqu Wang
- Department of Chemistry, University of Houston, Houston, Texas 77004, United States
| | - Haonan Zhao
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Diana Berman
- Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203, United States
| | - Robert Hovden
- Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
- Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Liuyan Zhao
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Bing Lv
- Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, United States
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 United States
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20
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Boix-Constant C, Mañas-Valero S, Ruiz AM, Rybakov A, Konieczny KA, Pillet S, Baldoví JJ, Coronado E. Probing the Spin Dimensionality in Single-Layer CrSBr Van Der Waals Heterostructures by Magneto-Transport Measurements. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204940. [PMID: 36008364 DOI: 10.1002/adma.202204940] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2022] [Revised: 08/22/2022] [Indexed: 06/15/2023]
Abstract
2D magnetic materials offer unprecedented opportunities for fundamental and applied research in spintronics and magnonics. Beyond the pioneering studies on 2D CrI3 and Cr2 Ge2 Te6 , the field has expanded to 2D antiferromagnets exhibiting different spin anisotropies and textures. Of particular interest is the layered metamagnet CrSBr, a relatively air-stable semiconductor formed by antiferromagnetically-coupled ferromagnetic layers (Tc ∼150 K) that can be exfoliated down to the single-layer. It presents a complex magnetic behavior with a dynamic magnetic crossover, exhibiting a low-temperature hidden-order below T*∼40 K. Here, the magneto-transport properties of CrSBr vertical heterostructures in the 2D limit are inspected. The results demonstrate the marked low-dimensional character of the ferromagnetic monolayer, with short-range correlations above Tc and an Ising-type in-plane anisotropy, being the spins spontaneously aligned along the easy axis b below Tc . By applying moderate magnetic fields along a and c axes, a spin-reorientation occurs, leading to a magnetoresistance enhancement below T*. In multilayers, a spin-valve behavior is observed, with negative magnetoresistance strongly enhanced along the three directions below T*. These results show that CrSBr monolayer/bilayer provides an ideal platform for studying and controlling field-induced phenomena in two-dimensions, offering new insights regarding 2D magnets and their integration into vertical spintronic devices.
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Affiliation(s)
- Carla Boix-Constant
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | - Alberto M Ruiz
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | - Andrey Rybakov
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | | | | | - José J Baldoví
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
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21
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Scheie A, Ziebel M, Chica DG, Bae YJ, Wang X, Kolesnikov AI, Zhu X, Roy X. Spin Waves and Magnetic Exchange Hamiltonian in CrSBr. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202467. [PMID: 35798311 PMCID: PMC9443475 DOI: 10.1002/advs.202202467] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Revised: 06/03/2022] [Indexed: 05/14/2023]
Abstract
CrSBr is an air-stable two-dimensional (2D) van der Waals semiconducting magnet with great technological promise, but its atomic-scale magnetic interactions-crucial information for high-frequency switching-are poorly understood. An experimental study is presented to determine the CrSBr magnetic exchange Hamiltonian and bulk magnon spectrum. The A-type antiferromagnetic order using single crystal neutron diffraction is confirmed here. The magnon dispersions are also measured using inelastic neutron scattering and rigorously fit the excitation modes to a spin wave model. The magnon spectrum is well described by an intra-plane ferromagnetic Heisenberg exchange model with seven nearest in-plane exchanges. This fitted exchange Hamiltonian enables theoretical predictions of CrSBr behavior: as one example, the fitted Hamiltonian is used to predict the presence of chiral magnon edge modes with a spin-orbit enhanced CrSBr heterostructure.
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Affiliation(s)
- Allen Scheie
- Neutron Scattering DivisionOak Ridge National LaboratoryOak RidgeTN37831USA
| | - Michael Ziebel
- Department of ChemistryColumbia UniversityNew YorkNY10027USA
| | - Daniel G. Chica
- Department of ChemistryColumbia UniversityNew YorkNY10027USA
| | - Youn June Bae
- Department of ChemistryColumbia UniversityNew YorkNY10027USA
| | - Xiaoping Wang
- Neutron Scattering DivisionOak Ridge National LaboratoryOak RidgeTN37831USA
| | | | - Xiaoyang Zhu
- Department of ChemistryColumbia UniversityNew YorkNY10027USA
| | - Xavier Roy
- Department of ChemistryColumbia UniversityNew YorkNY10027USA
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22
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Tenasini G, Soler-Delgado D, Wang Z, Yao F, Dumcenco D, Giannini E, Watanabe K, Taniguchi T, Moulsdale C, Garcia-Ruiz A, Fal'ko VI, Gutiérrez-Lezama I, Morpurgo AF. Band Gap Opening in Bilayer Graphene-CrCl 3/CrBr 3/CrI 3 van der Waals Interfaces. NANO LETTERS 2022; 22:6760-6766. [PMID: 35930625 DOI: 10.1021/acs.nanolett.2c02369] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX3; X = Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX3 takes place (reaching densities in excess of 1013 cm-2), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the activation energy of the conductivity and find excellent agreement with the latest theory accounting for the contribution of the σ bands to the BLG dielectric susceptibility. We further show that for BLG/CrCl3 and BLG/CrBr3 the band gap can be extracted from the gate voltage dependence of the low-temperature conductivity, and use this finding to refine the gap dependence on the magnetic field. Our results allow a quantitative comparison of the electronic properties of BLG with theoretical predictions and indicate that electrons occupying the CrX3 conduction band are correlated.
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Affiliation(s)
| | | | - Zhe Wang
- MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, Shaanxi Province Key Laboratory of Advanced Materials and Mesoscopic Physics, School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | | | | | | | - Kenji Watanabe
- Research Center for Functional Materials, NIMS, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, NIMS, 1-1 Namiki, Tsukuba 305-0044, Japan
| | | | | | - Vladimir I Fal'ko
- Henry Royce Institute for Advanced Materials, Manchester M13 9PL, U.K
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23
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Ye C, Wang C, Wu Q, Liu S, Zhou J, Wang G, Söll A, Sofer Z, Yue M, Liu X, Tian M, Xiong Q, Ji W, Renshaw Wang X. Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr. ACS NANO 2022; 16:11876-11883. [PMID: 35588189 DOI: 10.1021/acsnano.2c01151] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Magnetic van der Waals (vdW) materials possess versatile spin configurations stabilized in reduced dimensions. One magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order, and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. We reveal an odd-even layer effect of interlayer spin reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy, and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. Our work uncovers the layer-dependent interlayer antiferromagnetic spin reorientation engineered by magnetic field in the air-stable semiconductor.
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Affiliation(s)
- Chen Ye
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Cong Wang
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Qiong Wu
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100124, China
| | - Sheng Liu
- Okinawa Institute of Science and Technology, Onna, Okinawa Prefecture 904-0412, Japan
| | - Jiayuan Zhou
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Guopeng Wang
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Aljoscha Söll
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 16628 6 Prague, Czech Republic
| | - Zdenek Sofer
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 16628 6 Prague, Czech Republic
| | - Ming Yue
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100124, China
| | - Xue Liu
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Mingliang Tian
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Beijing Innovation Center for Future Chips, Tsinghua University, Beijing 100084, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Xiao Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
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24
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Healey AJ, Rahman S, Scholten SC, Robertson IO, Abrahams GJ, Dontschuk N, Liu B, Hollenberg LCL, Lu Y, Tetienne JP. Varied Magnetic Phases in a van der Waals Easy-Plane Antiferromagnet Revealed by Nitrogen-Vacancy Center Microscopy. ACS NANO 2022; 16:12580-12589. [PMID: 35866839 DOI: 10.1021/acsnano.2c04132] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Interest in van der Waals materials often stems from a desire to miniaturize existing technologies by exploiting their intrinsic layered structures to create near-atomically thin components that do not suffer from surface defects. One appealing property is an easily switchable yet robust magnetic order, which is only sparsely demonstrated in the case of in-plane anisotropy. In this work, we use widefield nitrogen-vacancy (NV) center magnetic imaging to measure the properties of individual flakes of CuCrP2S6, a multiferroic van der Waals magnet known to exhibit weak easy-plane anisotropy in the bulk. We chart the crossover between the in-plane ferromagnetism in thin flakes down to the trilayer and the bulk behavior dominated by a low-field spin-flop transition. Further, by exploiting the directional dependence of NV center magnetometry, we are able to observe an instance of a predominantly out-of-plane ferromagetic phase near zero field, in contrast with our expectation and previous experiments on the bulk material. We attribute this to the presence of surface anisotropies caused by the sample preparation process or exposure to the ambient environment, which is expected to have more general implications for a broader class of weakly anisotropic van der Waals magnets.
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Affiliation(s)
- Alexander J Healey
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Sam C Scholten
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - Islay O Robertson
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | - Gabriel J Abrahams
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | - Nikolai Dontschuk
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Lloyd C L Hollenberg
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
- Centre for Quantum Computation and Communication Technology, School of Engineering, The Australian National University, Canberra, ACT 2601, Australia
| | - Jean-Philippe Tetienne
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
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25
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Alafeef M, Pan D. Diagnostic Approaches For COVID-19: Lessons Learned and the Path Forward. ACS NANO 2022; 16:11545-11576. [PMID: 35921264 PMCID: PMC9364978 DOI: 10.1021/acsnano.2c01697] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/17/2022] [Accepted: 07/12/2022] [Indexed: 05/17/2023]
Abstract
Coronavirus disease 2019 (COVID-19) is a transmitted respiratory disease caused by the infection of the severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2). Although humankind has experienced several outbreaks of infectious diseases, the COVID-19 pandemic has the highest rate of infection and has had high levels of social and economic repercussions. The current COVID-19 pandemic has highlighted the limitations of existing virological tests, which have failed to be adopted at a rate to properly slow the rapid spread of SARS-CoV-2. Pandemic preparedness has developed as a focus of many governments around the world in the event of a future outbreak. Despite the largely widespread availability of vaccines, the importance of testing has not diminished to monitor the evolution of the virus and the resulting stages of the pandemic. Therefore, developing diagnostic technology that serves as a line of defense has become imperative. In particular, that test should satisfy three criteria to be widely adopted: simplicity, economic feasibility, and accessibility. At the heart of it all, it must enable early diagnosis in the course of infection to reduce spread. However, diagnostic manufacturers need guidance on the optimal characteristics of a virological test to ensure pandemic preparedness and to aid in the effective treatment of viral infections. Nanomaterials are a decisive element in developing COVID-19 diagnostic kits as well as a key contributor to enhance the performance of existing tests. Our objective is to develop a profile of the criteria that should be available in a platform as the target product. In this work, virus detection tests were evaluated from the perspective of the COVID-19 pandemic, and then we generalized the requirements to develop a target product profile for a platform for virus detection.
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Affiliation(s)
- Maha Alafeef
- Department of Chemical, Biochemical and Environmental
Engineering, University of Maryland Baltimore County, Interdisciplinary
Health Sciences Facility, 1000 Hilltop Circle, Baltimore, Maryland 21250,
United States
- Departments of Diagnostic Radiology and Nuclear
Medicine and Pediatrics, Center for Blood Oxygen Transport and Hemostasis,
University of Maryland Baltimore School of Medicine, Health Sciences
Research Facility III, 670 W Baltimore Street, Baltimore, Maryland 21201,
United States
- Department of Bioengineering, the
University of Illinois at Urbana−Champaign, Urbana, Illinois 61801,
United States
- Biomedical Engineering Department, Jordan
University of Science and Technology, Irbid 22110,
Jordan
| | - Dipanjan Pan
- Department of Chemical, Biochemical and Environmental
Engineering, University of Maryland Baltimore County, Interdisciplinary
Health Sciences Facility, 1000 Hilltop Circle, Baltimore, Maryland 21250,
United States
- Departments of Diagnostic Radiology and Nuclear
Medicine and Pediatrics, Center for Blood Oxygen Transport and Hemostasis,
University of Maryland Baltimore School of Medicine, Health Sciences
Research Facility III, 670 W Baltimore Street, Baltimore, Maryland 21201,
United States
- Department of Bioengineering, the
University of Illinois at Urbana−Champaign, Urbana, Illinois 61801,
United States
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26
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Choi E, Sim KI, Burch KS, Lee YH. Emergent Multifunctional Magnetic Proximity in van der Waals Layered Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200186. [PMID: 35596612 PMCID: PMC9313546 DOI: 10.1002/advs.202200186] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Revised: 04/01/2022] [Indexed: 05/10/2023]
Abstract
Proximity effect, which is the coupling between distinct order parameters across interfaces of heterostructures, has attracted immense interest owing to the customizable multifunctionalities of diverse 3D materials. This facilitates various physical phenomena, such as spin order, charge transfer, spin torque, spin density wave, spin current, skyrmions, and Majorana fermions. These exotic physics play important roles for future spintronic applications. Nevertheless, several fundamental challenges remain for effective applications: unavoidable disorder and lattice mismatch limits in the growth process, short characteristic length of proximity, magnetic fluctuation in ultrathin films, and relatively weak spin-orbit coupling (SOC). Meanwhile, the extensive library of atomically thin, 2D van der Waals (vdW) layered materials, with unique characteristics such as strong SOC, magnetic anisotropy, and ultraclean surfaces, offers many opportunities to tailor versatile and more effective functionalities through proximity effects. Here, this paper focuses on magnetic proximity, i.e., proximitized magnetism and reviews the engineering of magnetism-related functionalities in 2D vdW layered heterostructures for next-generation electronic and spintronic devices. The essential factors of magnetism and interfacial engineering induced by magnetic layers are studied. The current limitations and future challenges associated with magnetic proximity-related physics phenomena in 2D heterostructures are further discussed.
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Affiliation(s)
- Eun‐Mi Choi
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Kyung Ik Sim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Kenneth S. Burch
- Department of PhysicsBoston College140 Commonwealth AveChestnut HillMA02467‐3804USA
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
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27
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Avsar A. Highly anisotropic van der Waals magnetism. NATURE MATERIALS 2022; 21:731-733. [PMID: 35768597 DOI: 10.1038/s41563-022-01299-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Affiliation(s)
- Ahmet Avsar
- School of Mathematics, Statistics and Physics, Newcastle University, Newcastle upon Tyne, UK.
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28
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Rizzo DJ, McLeod AS, Carnahan C, Telford EJ, Dismukes AH, Wiscons RA, Dong Y, Nuckolls C, Dean CR, Pasupathy AN, Roy X, Xiao D, Basov DN. Visualizing Atomically Layered Magnetism in CrSBr. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201000. [PMID: 35504841 DOI: 10.1002/adma.202201000] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2022] [Revised: 04/22/2022] [Indexed: 06/14/2023]
Abstract
2D materials can host long-range magnetic order in the presence of underlying magnetic anisotropy. The ability to realize the full potential of 2D magnets necessitates systematic investigation of the role of individual atomic layers and nanoscale inhomogeneity (i.e., strain) on the emergence of stable magnetic phases. Here, spatially dependent magnetism in few-layer CrSBr is revealed using magnetic force microscopy (MFM) and Monte Carlo-based simulations. Nanoscale visualization of the magnetic sheet susceptibility is extracted from MFM data and force-distance curves, revealing a characteristic onset of both intra- and interlayer magnetic correlations as a function of temperature and layer-thickness. These results demonstrate that the presence of a single uncompensated layer in odd-layer terraces significantly reduces the stability of the low-temperature antiferromagnetic (AFM) phase and gives rise to multiple coexisting magnetic ground states at temperatures close to the bulk Néel temperature (TN ). Furthermore, the AFM phase can be reliably suppressed using modest fields (≈16 mT) from the MFM probe, behaving as a nanoscale magnetic switch. This prototypical study of few-layer CrSBr demonstrates the critical role of layer parity on field-tunable 2D magnetism and validates MFM for use in nanomagnetometry of 2D materials (despite the ubiquitous absence of bulk zero-field magnetism in magnetized sheets).
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Affiliation(s)
- Daniel J Rizzo
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | | | - Caitlin Carnahan
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Evan J Telford
- Department of Physics, Columbia University, New York, NY, 10027, USA
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Avalon H Dismukes
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Ren A Wiscons
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Yinan Dong
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Colin Nuckolls
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Cory R Dean
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Abhay N Pasupathy
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Di Xiao
- Department of Material Science and Engineering, University of Washington, Seattle, WA, 98195, USA
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
| | - D N Basov
- Department of Physics, Columbia University, New York, NY, 10027, USA
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29
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Wang QH, Bedoya-Pinto A, Blei M, Dismukes AH, Hamo A, Jenkins S, Koperski M, Liu Y, Sun QC, Telford EJ, Kim HH, Augustin M, Vool U, Yin JX, Li LH, Falin A, Dean CR, Casanova F, Evans RFL, Chshiev M, Mishchenko A, Petrovic C, He R, Zhao L, Tsen AW, Gerardot BD, Brotons-Gisbert M, Guguchia Z, Roy X, Tongay S, Wang Z, Hasan MZ, Wrachtrup J, Yacoby A, Fert A, Parkin S, Novoselov KS, Dai P, Balicas L, Santos EJG. The Magnetic Genome of Two-Dimensional van der Waals Materials. ACS NANO 2022; 16:6960-7079. [PMID: 35442017 PMCID: PMC9134533 DOI: 10.1021/acsnano.1c09150] [Citation(s) in RCA: 54] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 02/23/2022] [Indexed: 05/23/2023]
Abstract
Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.
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Affiliation(s)
- Qing Hua Wang
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Amilcar Bedoya-Pinto
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, 46980 Paterna, Spain
| | - Mark Blei
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Avalon H. Dismukes
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Assaf Hamo
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Sarah Jenkins
- Twist
Group,
Faculty of Physics, University of Duisburg-Essen, Campus Duisburg, 47057 Duisburg, Germany
| | - Maciej Koperski
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Yu Liu
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Qi-Chao Sun
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
| | - Evan J. Telford
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Hyun Ho Kim
- School
of Materials Science and Engineering, Department of Energy Engineering
Convergence, Kumoh National Institute of
Technology, Gumi 39177, Korea
| | - Mathias Augustin
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Uri Vool
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John Harvard
Distinguished Science Fellows Program, Harvard
University, Cambridge, Massachusetts 02138, United States
| | - Jia-Xin Yin
- Laboratory
for Topological Quantum Matter and Spectroscopy, Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
| | - Lu Hua Li
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Alexey Falin
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Cory R. Dean
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Fèlix Casanova
- CIC nanoGUNE
BRTA, 20018 Donostia - San Sebastián, Basque
Country, Spain
- IKERBASQUE,
Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Richard F. L. Evans
- Department
of Physics, University of York, Heslington, York YO10 5DD, United Kingdom
| | - Mairbek Chshiev
- Université
Grenoble Alpes, CEA, CNRS, Spintec, 38000 Grenoble, France
- Institut
Universitaire de France, 75231 Paris, France
| | - Artem Mishchenko
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Cedomir Petrovic
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Rui He
- Department
of Electrical and Computer Engineering, Texas Tech University, 910 Boston Avenue, Lubbock, Texas 79409, United
States
| | - Liuyan Zhao
- Department
of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109, United States
| | - Adam W. Tsen
- Institute
for Quantum Computing and Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Brian D. Gerardot
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Mauro Brotons-Gisbert
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Zurab Guguchia
- Laboratory
for Muon Spin Spectroscopy, Paul Scherrer
Institute, CH-5232 Villigen PSI, Switzerland
| | - Xavier Roy
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Sefaattin Tongay
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Ziwei Wang
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - M. Zahid Hasan
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Princeton
Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, United States
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
| | - Joerg Wrachtrup
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
- Max Planck
Institute for Solid State Research, 70569 Stuttgart, Germany
| | - Amir Yacoby
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A.
Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Albert Fert
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department
of Materials Physics UPV/EHU, 20018 Donostia - San Sebastián, Basque Country, Spain
| | - Stuart Parkin
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
| | - Kostya S. Novoselov
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Pengcheng Dai
- Department
of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Luis Balicas
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
- Department
of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Elton J. G. Santos
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Higgs Centre
for Theoretical Physics, The University
of Edinburgh, Edinburgh EH9 3FD, United Kingdom
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30
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Wu F, Gutiérrez-Lezama I, López-Paz SA, Gibertini M, Watanabe K, Taniguchi T, von Rohr FO, Ubrig N, Morpurgo AF. Quasi-1D Electronic Transport in a 2D Magnetic Semiconductor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109759. [PMID: 35191570 DOI: 10.1002/adma.202109759] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2021] [Revised: 01/18/2022] [Indexed: 06/14/2023]
Abstract
Electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor of interest because of its magnetic properties, is investigated. An extremely pronounced anisotropy manifesting itself in qualitative and quantitative differences of all quantities measured along the in-plane a and b crystallographic directions is found. In particular, a qualitatively different dependence of the conductivities σa and σb on temperature and gate voltage, accompanied by orders of magnitude differences in their values (σb /σa ≈ 3 × 102 to 105 at low temperature and negative gate voltage) are observed, together with a different behavior of the longitudinal magnetoresistance in the two directions and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology-and unambiguous signatures of a 1D van Hove singularity detected in energy-resolved photocurrent measurements-indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. It is concluded that CrSBr is the first 2D semiconductor to show distinctly quasi-1D electronic transport properties.
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Affiliation(s)
- Fan Wu
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Sara A López-Paz
- Department of Chemistry, University of Zurich, Zurich, CH-8057, Switzerland
| | - Marco Gibertini
- Dipartimento di Scienze Fisiche, Informatiche e Matematiche, University of Modena and Reggio Emilia, Modena, IT-41125, Italy
- Centro S3, CNR Istituto Nanoscienze, Modena, IT-41125, Italy
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Fabian O von Rohr
- Department of Chemistry, University of Zurich, Zurich, CH-8057, Switzerland
| | - Nicolas Ubrig
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
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31
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Zollner K, Fabian J. Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr_{2}Ge_{2}Te_{6}. PHYSICAL REVIEW LETTERS 2022; 128:106401. [PMID: 35333087 DOI: 10.1103/physrevlett.128.106401] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Revised: 12/22/2021] [Accepted: 02/17/2022] [Indexed: 06/14/2023]
Abstract
We investigate the twist-angle and gate dependence of the proximity exchange coupling in twisted graphene on monolayer Cr_{2}Ge_{2}Te_{6} from first principles. The proximitized Dirac band dispersions of graphene are fitted to a model Hamiltonian, yielding effective sublattice-resolved proximity-induced exchange parameters (λ_{ex}^{A} and λ_{ex}^{B}) for a series of twist angles between 0° and 30°. For aligned layers (0° twist angle), the exchange coupling of graphene is the same on both sublattices, λ_{ex}^{A}≈λ_{ex}^{B}≈4 meV, while the coupling is reversed at 30° (with λ_{ex}^{A}≈λ_{ex}^{B}≈-4 meV). Remarkably, at 19.1° the induced exchange coupling becomes antiferromagnetic: λ_{ex}^{A}<0, λ_{ex}^{B}>0. Further tuning is provided by a transverse electric field and the interlayer distance. The predicted proximity magnetization reversal and emergence of an antiferromagnetic Dirac dispersion make twisted graphene/Cr_{2}Ge_{2}Te_{6} bilayers a versatile platform for realizing topological phases and for spintronics applications.
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Affiliation(s)
- Klaus Zollner
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
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32
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Chakraborty SK, Kundu B, Nayak B, Dash SP, Sahoo PK. Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices. iScience 2022; 25:103942. [PMID: 35265814 PMCID: PMC8898921 DOI: 10.1016/j.isci.2022.103942] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022] Open
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33
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Jeon KR, Cho K, Chakraborty A, Jeon JC, Yoon J, Han H, Kim JK, Parkin SSP. Role of Two-Dimensional Ising Superconductivity in the Nonequilibrium Quasiparticle Spin-to-Charge Conversion Efficiency. ACS NANO 2021; 15:16819-16827. [PMID: 34597020 PMCID: PMC8552497 DOI: 10.1021/acsnano.1c07192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/19/2021] [Accepted: 09/29/2021] [Indexed: 06/13/2023]
Abstract
Nonequilibrium studies of two-dimensional (2D) superconductors (SCs) with Ising spin-orbit coupling are prerequisite for their successful application to equilibrium spin-triplet Cooper pairs and, potentially, Majorana Fermions. By taking advantage of the recent discoveries of 2D SCs and their compatibility with any other materials, we fabricate here nonlocal magnon devices to examine how such 2D Ising superconductivity affects the conversion efficiency of magnon spin to quasiparticle charge in superconducting flakes of 2H-NbSe2 transferred onto ferrimagnetic insulating Y3Fe5O12. Comparison with a reference device based on a conventionally paired superconductor shows that the Y3Fe5O12-induced in-plane (IP) exchange spin-splitting in the NbSe2 flake is hindered by its inherent out-of-plane (OOP) spin-orbit field, which, in turn, limits the transition-state enhancement of the spin-to-charge conversion efficiency. Our out-of-equilibrium study highlights the significance of symmetry matching between underlying Cooper pairs and exchange-induced spin-splitting for the giant transition-state spin-to-charge conversion and may have implications toward proximity-engineered spin-polarized triplet pairing via tuning the relative strength of IP exchange and OOP spin-orbit fields in ferromagnetic insulator/2D Ising SC bilayers.
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34
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Sierra JF, Fabian J, Kawakami RK, Roche S, Valenzuela SO. Van der Waals heterostructures for spintronics and opto-spintronics. NATURE NANOTECHNOLOGY 2021; 16:856-868. [PMID: 34282312 DOI: 10.1038/s41565-021-00936-x] [Citation(s) in RCA: 104] [Impact Index Per Article: 34.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2020] [Accepted: 06/03/2021] [Indexed: 06/13/2023]
Abstract
The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In addition, their atomically thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. Here we provide an overview of recent progress in 2D spintronics and opto-spintronics using van der Waals heterostructures. After an introduction to the forefront of spin transport research, we highlight the unique spin-related phenomena arising from spin-orbit and magnetic proximity effects. We further describe the ability to create multifunctional hybrid heterostructures based on van der Waals materials, combining spin, valley and excitonic degrees of freedom. We end with an outlook on perspectives and challenges for the design and production of ultracompact all-2D spin devices and their potential applications in conventional and quantum technologies.
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Affiliation(s)
- Juan F Sierra
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Barcelona, Spain.
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, Regensburg, Germany
| | | | - Stephan Roche
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Barcelona, Spain
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain
| | - Sergio O Valenzuela
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Barcelona, Spain.
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain.
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