Two-dimensional materials prospects for non-volatile spintronic memories

Magnetic Proximity Effects in Iron Germanium Telluride/Platinum Heterostructures

Van der Waals (vdW) magnetic materials have attracted considerable attention for use in spintronic devices such as those controlled by spin-orbit torque (SOT). Such SOT-driven devices are typically fabricated by bringing a vdW magnet in proximity to a spin-charge conversion layer to achieve current-driven magnetization switching. Here, we show that such structures fabricated with iron germanium telluride (FGT) and platinum can exhibit emergent magnetic properties, which we attribute to magnetic proximity effects at the FGT/Pt interface. These changes manifest as increased perpendicular magnetic anisotropy and the emergence of additional magnetization reversal steps as probed by magneto-transport, with the most significant changes appearing in thinner flakes. The behavior was found to be robust and consistently appeared in samples made with crystals from different vendors. Our results demonstrate the potential for engineering vdW spintronic systems through magnetic proximity effects.

Precursor Engineering for Synergetic Growth of Superposition Multiheterostructures

2D van der Waals multiheterostructures serve as an extensively studied material due to their unique physical properties. However, the multicomponent heterostructure is difficult to obtain on a large scale and is limited by the conventional method of mechanical stacking, which hinders their potential applications. Here a precursor-modulated chemical vapor deposition strategy is reported for selectively growing vertical multiheterostructures, lateral multiheterostructures, and their combinate stackings. The composition within the heterostructure can be precisely controlled by modulating the concentration of precursors. As a result, four types of heterostructure are resoundingly achieved including graphene/h-BN, graphene/Mo2C, h-BN/Mo2C, and graphene/h-BN/Mo2C superposition multiheterostructure. Morphological, spectroscopic, and atomic-scale structural characterizations are conducted to suggest the high quality of the heterostructures, demonstrating the precise controllability of the strategy. Moreover, both the crystal orientation miss-alignment and Moiré fringes within graphene/Mo2C vertical heterostructures are also successfully observed benefiting from the fluidity of the liquid copper catalyst under high temperatures. The obtained Mo2C shows 2D characteristics of superconducting transitions (at 0 T, 6.9 K) as well as a strong anisotropy with magnetic field orientation. The replication of the multiheterostructure customization process in other 2D materials is anticipated, potentially expediting the design of next-generation functional devices.

Characterizing G-type antiferromagnetism quantitatively with optical second harmonic generation

Antiferromagnetism has become a promising candidate for the next generation electronic devices due to its thermal stability, low energy consumption, and fast switching speed. However, the canceling of the net magnetic moment in antiferromagnetic order presents great challenge on quantitative characterization and modulation, hindering its investigation and application. In this work, utilizing the optical second harmonic generation (SHG) in a wide temperature range, the integrated differential phase contrast scanning transmission electron microscopy, and first-principles calculations, we performed a quantitative study on the evolution of non-collinear antiferromagnetic order in BiFeO3 films with a series of strains. We found that the antiferromagnetic coupling was significantly enhanced, featured by the increase of Néel temperature from 428 K to 646 K, and by one order of enhancement of SHG intensity contributed from the G-type antiferromagnetic order by strain manipulation from -2.4% to +0.6%. We attributed the enhancement of the antiferromagnetic coupling to the enhancement of the superexchange interaction as the Fe-O-Fe bond angle approaches 180° when the in-plane lattice constants increase, which might also result in a tendency from a non-collinear antiferromagnetic order to a collinear one. Our work not only bridges the antiferromagnetic order and the strain manipulation in epitaxial multiferroics, more importantly, also paves a way for quantitative characterization by SHG technology and the precise manipulation of antiferromagnetism.

Two-Dimensional Cr3Te4/WS2/Fe3GeTe2/WTe2 Magnetic Memory with Field-Free Switching and Low Power Consumption

Spin-orbit torque (SOT) magnetic memory technology has garnered significant attention due to its ability to enable field-free switching of magnets with strong perpendicular magnetic anisotropy (PMA). However, concerns regarding power consumption of SOT-memory are persisting. Here, this work proposes a method to construct magnetic tunnel junction (MTJ) by transferring chemically vapor-deposited two-dimensional (2D) Cr3Te4/WS2 van der Waals (vdW) heterostructures onto 2D Fe3GeTe2 (FGT) magnet. The robustness and tunability of 2D magnets allow MTJs to exhibit non-volatility, multiple output states, and impressive cycling durability. MTJs with thin WS2 barriers (fewer than six layers) exhibit a linear tunneling effect, achieving a low resistance-area product (RA) of 15.5 kΩ·µm2 using bilayer WS2, which facilitats low-power operation. Furthermore, the different 2D magnets display a significant anti-parallel window of up to 8 kOe. SOT-memory based on the typical MTJ demonstrates a low write consumption of 0.3 mJ and read consumption of 9.7 nJ, marking a significant advancement in 2D vdW SOT-memory. This research has pointed out a new direction for constructing low power consumption SOT-memory with PMA field-free switching.

Cooling-induced Strains in 2D Materials and Their Modulation via Interface Engineering

2D materials exhibit unique properties for next-generation electronics and quantum devices. However, their sensitivity to temperature variations, particularly concerning cooling-induced strain, remains underexplored systematically. This study investigates the effects of cooling-induced strain on monolayer MoSe2 at cryogenic temperatures. It is emphasized that the mismatch in thermal expansion coefficients between the material and bulk substrate leads to significant external strain, which superimposes the internal strain of the material. By engineering the material-substrate 2D-bulk interface, the resulting strain conditions are characterized and reveal that substantial compressive strain induces new emission features linked to direct-to-indirect bandgap transition, as confirmed by photoluminescence and transient absorption spectroscopy studies. Finally, it is demonstrated that encapsulation with hexagonal boron nitride can mitigate the external strain by 2D-2D interfaces, achieving results similar to those of suspended samples. The findings address key challenges in quantifying and characterizing strain types across different 2D-bulk interfaces, distinguishing cooling-induced strain effects from other temperature-dependent phenomena, and designing strain-sensitive 2D material devices for extreme temperature conditions.

Spintronic Devices upon 2D Magnetic Materials and Heterojunctions

In spintronics, there has been increasing interest in two-dimensional (2D) magnetic materials. The well-defined layered crystalline structure, interface conditions, and van der Waals stacking of these materials offer advantages for the development of high-performance spintronic devices. Spin-orbit torque (SOT) devices and the tunneling magnetoresistance (TMR) effect based on these materials have emerged as prominent research areas. SOT devices utilizing 2D magnetic materials can efficiently achieve SOT-driven magnetization switching by modulating the interaction between spin and orbital degrees of freedom. Notably, crystal structure symmetry breaking in 2D magnetic heterojunctions leads to field-free perpendicular magnetization switching and an extremely low SOT-driven magnetization switching current density of down to 106 A/cm2. This review provides a comprehensive overview of the construction, measurement, and mechanisms of 2D SOT heterojunctions. The TMR effect observed in 2D materials also exhibits significant potential for various applications. Specifically, the spin-filter effect in layered A-type antiferromagnets has led to giant TMR ratios approaching 19,000%. Here, we review the physical mechanisms underlying the TMR effect, along with the design of high-performance devices such as magnetic tunnel junctions (MTJ) and spin valves. This review summarizes different structural types of 2D heterojunctions and key factors that enhance TMR values. These advanced devices show promising prospects in fields such as magnetic storage. We highlight significant advancements in the integration of 2D materials in SOT, MTJ, and spin valve devices, which offer advantages such as high-density storage capability, low-power computing, and fast data transmission rates for Magnetic Random Access Memory and logic integrated circuits. These advancements are expected to revolutionize future developments in information technology.

Antiferroelectric Altermagnets: Antiferroelectricity Alters Magnets

Magnetoelectric coupling is crucial for uncovering fundamental phenomena and advancing technologies in high-density data storage and energy-efficient devices. The emergence of altermagnets, which unify the advantages of ferromagnets and antiferromagnets, offers unprecedented opportunities for magnetoelectric coupling. However, electrically tuning altermagnets remains an outstanding challenge. Here, we demonstrate how this challenge can be overcome by using antiferroelectricity and ferroelectricity to modulate the spin splitting in altermagnets, employing a universal, symmetry-based design principle supported by an effective model. We introduce an unexplored class of multiferroics: antiferroelectric altermagnets (AFEAM), where antiferroelectricity and altermagnetism coexist in a single material. From first-principles calculations, we validate the feasibility of AFEAM in well-established van der Waals metal thio(seleno)phosphates and perovskite oxides. We reveal the design of AFEAM ranging from two-dimensional monolayers to three-dimensional bulk structures. Remarkably, even a weak electric field can effectively toggle spin polarization in the AFEAM by switching between antiferroelectric and ferroelectric states. Our findings not only enrich the understanding of magnetoelectric coupling but also pave the way for electrically controlled spintronic and multiferroic devices.

Spin-Valve Effect in Junctions with a Single Ferromagnet

Spin valves are essential components in spintronic memory devices whose conductance is modulated by controlling spin-polarized electron tunnelling through the alignment of the magnetization in ferromagnetic elements. Whereas conventional spin valves unavoidably require at least two ferromagnetic elements, here we demonstrate a van der Waals spin valve based on a tunnel junction that comprises only one such ferromagnetic layer. Our devices combine an Fe3GeTe2 electrode acting as a spin injector together with a paramagnetic tunnel barrier, formed by a CrBr3 multilayer operated above its Curie temperature. We show that these devices exhibit a conductance modulation with values comparable to those of conventional spin valves. A quantitative analysis of the magnetoconductance that accounts for the field-induced magnetization of CrBr3, including the effect of exchange interaction, confirms that the spin valve effect originates from the paramagnetic response of the barrier, in the absence of spontaneous magnetization in CrBr3.

Thermally-Stable Temperature-Independent Tunneling Magnetoresistance in all van der Waals Fe3GaTe2/GaSe/Fe3GaTe2 Magnetic Tunnel Junctions

Thermal stability is of great significance for the next-generation two-dimensional (2D) non-volatile spintronic devices. Typically, as the temperature increases, the spin polarization of materials decreases rapidly following the Bloch 𝑇3/2 law in low-temperature regions, resulting in a rapid decrease in the tunneling magnetoresistance (TMR) of the magnetic tunnel junction (MTJ). Owing to the thermal effects induced by current during the writing processes, even small temperature fluctuations can result in significant variations in the TMR of MTJs, hindering their practical applications. In this paper, all-van der Waals Fe3GaTe2/GaSe/Fe3GaTe2 (FGaT/GaSe/FGaT) MTJ devices are constructed, achieving a TMR ratio of 47% at low temperatures and 17% at room temperature. Importantly, the TMR ratio remains stable within a temperature range from 2 to 160 K, breaking the Bloch 𝑇3/2 law. The temperature-independent TMR is highly related to the enhanced perpendicular magnetic anisotropy (PMA) with reduced dimensionality is demonstrated. This work paves a promising path to achieve high-performance, thermally stable 2D spintronic memory chips.

Pick-and-Place Transfer of Arbitrary-Metal Electrodes for van der Waals Device Fabrication

Van der Waals electrode integration is a promising strategy to create nearly perfect interfaces between metals and 2D materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place transfer of prefabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any sacrificial layers due to the inherent low-energy and dangling-bond-free nature of the hydrogenated diamond surface. The technique enables transfer of arbitrary-metal electrodes and an electrode array, as demonstrated by successful transfer of eight different elemental metals with work functions ranging from 4.22 to 5.65 eV. We also demonstrate the electrode array transfer for large-scale device fabrication. The mechanical transfer of metal electrodes from diamond to van der Waals materials creates atomically smooth interfaces with no interstitial impurities or disorder, as observed with cross-section high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. As a demonstration of its device application, we use the diamond transfer technique to create metal contacts to monolayer transition metal dichalcogenide semiconductors with high-work-function Pd, low-work-function Ti, and semimetal Bi to create n- and p-type field-effect transistors with low Schottky barrier heights. We also extend this technology to air-sensitive materials (trilayer 1T' WTe2) and other applications such as ambipolar transistors, Schottky diodes, and optoelectronics. This highly reliable and reproducible technology paves the way for new device architectures and high-performance devices.

Two-Dimensional Nonvolatile Valley Spin Valve

A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission, controlled by the relative alignment of magnetic moments of the two ferromagnetic layers. Recently, the advent of valleytronics has conceptualized a valley spin valve (VSV)─a device that utilizes the valley degree of freedom and spin-valley locking to achieve a similar valve effect without relying on magnetism. In this study, we propose a nonvolatile VSV (n-VSV) based on a two-dimensional (2D) ferroelectric semiconductor where resistance of n-VSV is controlled by a ferroelectric domain wall between two uniformly polarized domains. Focusing on the 1T″ phase of MoS2, which is known to be ferroelectric down to a monolayer and using density functional theory combined with quantum transport calculations, we demonstrate that switching between the uniformly polarized state and the state with oppositely polarized domains separated by a domain wall results in a resistance change of as high as 107. This giant VSV effect occurs due to transmission being strongly dependent on matching (mismatching) the valley-dependent spin polarization in the two domains with the same (opposite) ferroelectric polarization orientations, when the chemical potential of 1T″-MoS2 lies within the spin-split valleys. The proposed n-VSV can be employed as a functional device for high-performance nonvolatile valleytronics.

Ultrathin Rare-Earth Oxyhalides as High-κ van der Waals Layered Dielectrics

Van der Waals (vdW) dielectrics are extensively employed to enhance the performance of 2D electronic devices. However, current vdW dielectric materials still encounter challenges such as low dielectric constant (κ) and difficulties in synthesizing high-quality single crystals. 2D rare-earth oxyhalides (REOXs) with exceptional electrical properties present an opportunity for the exploration of novel high-κ dielectrics. In this study, for the first time, the synthesis of a series of van der Waals layered gadolinium oxyhalides with thicknesses down to monolayer through a space-confined vdW epitaxy approach and demonstrating their application as a single-crystalline gate dielectric is reported. It exhibits a remarkable relative dielectric constant exceeding 17 and an impressive breakdown field strength of 13.5 MV cm-1. The 2D transistors directly gated by the REOXs layer exhibit enhanced electron mobility and a low interface trap density. An ultrahigh on/off current ratio of 109 and a near-Boltzmann-limit subthreshold swing is achieved. The superior dielectric properties, combined with the universality and scalability of the production method (e.g., millimeter-scale films are achieved), demonstrate that 2D REOXs can serve as promising gate dielectrics for 2D electronics, thereby expanding the study of high-κ vdW materials and potentially providing new opportunities for the development of low-power electronic devices.

Mechanical and electromechanical properties of 2D materials studied via in situ microscopy techniques

Two-dimensional (2D) materials with van der Waals stacking have been reported to have extraordinary mechanical and electromechanical properties, which give them revolutionary potential in various fields. However, due to the atomic-scale thickness of these 2D materials, their fascinating properties cannot be effectively characterized in many cases using conventional measurement techniques. Based on typical microscopy techniques such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), and atomic force microscopy (AFM), a range of in situ microscopy techniques have been developed to systematically quantify the mechanical and electromechanical properties of 2D materials. This review highlights the advancements of in situ microscopy techniques for studying elasticity and fracture, adhesion and separation, structural superlubricity, as well as c-axis piezoresistivity and rotation angle-related transport of 2D materials. The methods and results of various microscopy experiments, including nanoindentation using AFM, pressurized bubble tests, self-retraction experiments, pull-to-peel methods and so on, are compared, and their respective advantages and limitations are discussed. Finally, we summarize the current challenges in these microscopy techniques and outline development opportunities.

Two-Dimensional Materials for Brain-Inspired Computing Hardware

Recent breakthroughs in brain-inspired computing promise to address a wide range of problems from security to healthcare. However, the current strategy of implementing artificial intelligence algorithms using conventional silicon hardware is leading to unsustainable energy consumption. Neuromorphic hardware based on electronic devices mimicking biological systems is emerging as a low-energy alternative, although further progress requires materials that can mimic biological function while maintaining scalability and speed. As a result of their diverse unique properties, atomically thin two-dimensional (2D) materials are promising building blocks for next-generation electronics including nonvolatile memory, in-memory and neuromorphic computing, and flexible edge-computing systems. Furthermore, 2D materials achieve biorealistic synaptic and neuronal responses that extend beyond conventional logic and memory systems. Here, we provide a comprehensive review of the growth, fabrication, and integration of 2D materials and van der Waals heterojunctions for neuromorphic electronic and optoelectronic devices, circuits, and systems. For each case, the relationship between physical properties and device responses is emphasized followed by a critical comparison of technologies for different applications. We conclude with a forward-looking perspective on the key remaining challenges and opportunities for neuromorphic applications that leverage the fundamental properties of 2D materials and heterojunctions.

Two-Dimensional Organic-Inorganic van der Waals Hybrids

Two-dimensional organic-inorganic (2DOI) van der Waals hybrids (vdWhs) have emerged as a groundbreaking subclass of layer-stacked (opto-)electronic materials. The development of 2DOI-vdWhs via systematically integrating inorganic 2D layers with organic 2D crystals at the molecular/atomic scale extends the capabilities of traditional 2D inorganic vdWhs, thanks to their high synthetic flexibility and structural tunability. Constructing an organic-inorganic hybrid interface with atomic precision will unlock new opportunities for generating unique interfacial (opto-)electronic transport properties by combining the strengths of organic and inorganic layers, thus allowing us to satisfy the growing demand for multifunctional applications. Here, this review provides a comprehensive overview of the latest advancements in the chemical synthesis, structural characterization, and numerous applications of 2DOI-vdWhs. Firstly, we introduce the chemistry and the physical properties of the recently rising organic 2D crystals (O2DCs), which feature crystalline 2D nanostructures comprising carbon-rich repeated units linked by covalent/noncovalent bonds and exhibit strong in-plane extended π-conjugation and weak interlayer vdWs interaction. Simultaneously, representative inorganic 2D crystals (I2DCs) are briefly summarized. After that, the synthetic strategies will be systematically summarized, including synthesizing single-component O2DCs with dimensional control and their vdWhs with I2DCs. With these synthetic approaches, the control in the dimension, the stacking modes, and the composition of the 2DOI-vdWhs will be highlighted. Subsequently, a special focus will be given on the discussion of the optical and electronic properties of the single-component 2D materials and their vdWhs, which will be closely relevant to their structures, so that we can establish a general structure-property relationship of 2DOI-vdWhs. In addition to these physical properties, the (opto-)electronic devices such as transistors, photodetectors, sensors, spintronics, and neuromorphic devices as well as energy devices will be discussed. Finally, we provide an outlook to discuss the key challenges for the 2DOI-vdWhs and their future development. This review aims to provide a foundational understanding and inspire further innovation in the development of next-generation 2DOI-vdWhs with transformative technological potential.

Above-Room-Temperature Ferromagnetism Regulation in Two-Dimensional Heterostructures by van der Waals Interfacial Magnetochemistry

Most methods for regulating physical and chemical properties of materials involve the breaking and formation of chemical bonds, which inevitably change local structures. Two-dimensional (2D) ferromagnets are critical for spintronic memory and quantum devices, but most of them maintain ferromagnetism at low temperature, and multiaspect control of 2D ferromagnetism at room temperature or above is still missing. Here, we report a nondestructive, van der Waals (vdW) interfacial magnetochemistry strategy for above-room-temperature, multiaspect 2D ferromagnetism regulation. By vdW coupling nonmagnetic MoS2, WSe2, or Bi1.5Sb0.5Te1.7Se1.3 with 2D vdW ferromagnet Fe3GaTe2, the Curie temperature is enhanced up to 400 K, best for 2D ferromagnets, with 26.8% tuning of room-temperature perpendicular magnetic anisotropy and an unconventional anomalous Hall effect up to 340 K. These phenomena originate from changes in magnetic exchange interactions and magnetic anisotropy energy by interfacial charge transfer and spin-orbit coupling. This work opens a pathway for engineering multifunctional 2D heterostructures by vdW interfacial magnetochemistry.

Suppressed Nonreciprocal Second-Harmonic Generation of Antiferromagnet MnPSe3 in the MnPSe3/Graphene Heterostructure Due to Interfacial Magnon-Plasmon Coupling

Interfacial coupling is one of the keys to manipulating magnetic/nonmagnetic two-dimensional (2D) heterostructures for novel functionalities. The MnPSe3/graphene heterostructure is a prospective platform for quantum information and metrology. However, how graphene affects MnPSe3 through interfacial coupling is still poorly understood. Herein, second-harmonic generation (SHG) of antiferromagnet MnPSe3 in the MnPSe3/graphene heterostructure is revealed. Surprisingly, it was found that below TN, nonreciprocal or c-type SHG of MnPSe3 disappeared when interfacing with the graphene, suggesting the existence of interfacial couplings and/or interactions. Most interestingly, different from the short-range interfacial proximity interaction, this interfacial interaction could be contactless and long-range and varied from 2D metallic/semiconducting to insulating underlayers. Interfacial magnon-plasmon coupling probably played an important role in suppressing the c-type SHG signals of MnPSe3 in the MnPSe3/graphene heterostructure. This study will improve our understanding of the manipulation of nonlinear optical properties in 2D heterostructures.

Low-Temperature Electron Spin Resonance Study of MnPS3 Antiferromagnetic Single Crystal

van der Waals MnPS3 compound belonging to the class of Néel-type antiferromagnets (AFM) has recently emerged as a promising two-dimensional material for spintronic applications. In this study, we report on the electron spin resonance (ESR) study of an MnPS3 single crystal across the Néel transition temperature (T N = 78 K) for the magnetic field applied in the directions parallel and perpendicular to the crystallographic c axis. Furthermore, the ESR angular dependence at a temperature near T N has been investigated. We observed multiple resonance modes with antiferromagnetic, ferromagnetic, and paramagnetic characters. In addition, we revealed the occurrence of complex spin-spin correlations and a magnetic-topological Berezinskii-Kosterlitz-Thouless (BKT) phase transition (i.e., bound vortex-antivortex pairs) at T BKT with T BKT/T N typically found in two-dimensional magnets.

All-in-One Magneto-optical Memory Arrays Based on a Two-Dimensional Ferromagnetic Metal

Two-dimensional (2D) van der Waals (vdW) magnetic materials with atomic-scale thickness and smooth interfaces promise the possibility of developing high-density, energy-efficient spintronic devices. However, it remains a challenge to effectively control the perpendicular magnetic anisotropy (PMA) of 2D vdW ferromagnetic materials, as well as the integration of multiple memory cells. Here, we report highly efficient magneto-optical memory arrays by utilizing the huge spin-orbit torques (SOT) induced by the in-plane current in Fe3GeTe2 (FGT) flake. The device is constructed from individual FGT flakes without heavy metal assistance and allows for a low current density. The magneto-optical memory arrays implement nonvolatile memories for three bits and can be repeatedly scrubbed for "writing" and "reading". Besides, we show that FGT nanoflakes possess current-controlled volatile switching behavior at zero magnetic field. These results provide a solution for the next generation of all-vdW-scalable, high-performance spintronic logic devices and SOT-Magnetic Random Access Memory (MRAM).

Twist-angle-tunable spin texture in WSe2/graphene van der Waals heterostructures

Twist engineering has emerged as a powerful approach for modulating electronic properties in van der Waals heterostructures. While theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, experimental studies are lacking. Here, by performing spin precession experiments, we demonstrate tunability of the spin texture and associated spin-charge interconversion with twist angle in WSe2/graphene heterostructures. For specific twist angles, we detect a spin component radial with the electron's momentum, in addition to the standard orthogonal component. Our results show that the helicity of the spin texture can be reversed by twist angle, highlighting the critical role of the twist angle in the spin-orbit properties of WSe2/graphene heterostructures and paving the way for the development of spin-twistronic devices.

Large unidirectional spin Hall magnetoresistance in FeNi/Pt/Bi2Se3 trilayers by Pt interfacial engineering

Unidirectional spin Hall magnetoresistance (USMR) has emerged as a promising candidate for magnetoresistive random-access memory (MRAM) technology. However, the realization of high signal-to-noise output signal in USMR devices has remained a challenge, primarily due to the limited USMR effect at room temperature. In this study, we report a large USMR effect in FeNi/Pt/Bi₂Se₃ trilayers through interfacial engineering with Pt to optimize the spin current transmission efficiency and electron-magnon scattering. Our devices exhibit a USMR value that is an order of magnitude higher than previously reported systems, reaching 30.6 ppm/MA/cm² at room temperature. First-principles calculations and experimental observations suggest that the Pt layer not only preserves the spin-momentum locked topological surface states in Bi₂Se₃ at the Fermi-level but also generates additional Rashba surface states within the Pt itself to enhance the effective SOT efficiency. Furthermore, we demonstrate that the two-terminal USMR-MRAM devices show robust output performance with 2nd harmonic resistance variation around 0.11 Ω/mA. Remarkably, the performance of these devices further improves at elevated temperatures, highlighting their potential for reliable operation in a wide range of environmental conditions. Our findings pave the way for future advancements in high-performance, energy-efficient spintronic memory devices.

Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-Based Spin-Orbit Torque Devices

Nonvolatile memristors offer a salient platform for artificial neural network (ANN), yet the integration of different function and algorithm blocks into one hardware system remains challenging. Here we demonstrate the brain-like synaptic (SOT-S) and neuronal (SOT-N) functions in the Bi2Te3/CrTe2 heterostructure-based spin-orbit torque (SOT) device. The SOT-S unit exhibits highly linear and symmetrical long-term potentiation/depression process, resulting in a fast-training of the MNIST data set with the classification accuracy above 90%. Meanwhile, the Sigmoid-shape transition curve inherited in the SOT-N cell replaces the software-based activation function block, hence reducing the system complexity. On this basis, we employ a serial-connected, voltage-mode sensing ANN architecture to enhance the vector-matrix multiplication signal strength with low reading error of 0.61% while simplifying the peripheral circuitry. Furthermore, the trainable activation function of SOT-N enables the implementation of the Batch Normalization algorithm and activation operation within one clock cycle, which bring about improved on/off-chip training performance close to the ideal baseline.

Ionic liquids intercalation in titanium carbide MXenes: A first-principles investigation

Herein, we present a density functional theory with dispersion correction (DFT-D) calculations that focus on the intercalation of ionic liquids (ILs) electrolytes into the two-dimensional (2D) Ti3C2Tx MXenes. These ILs include the cation 1-ethyl-3-methylimidazolium (Emim+), accompanied by three distinct anions: bis(trifluoromethylsulfonyl)imide (TFSA-), (fluorosulfonyl)imide (FSA-) and fluorosulfonyl(trifluoromethanesulfonyl)imide (FTFSA-). By altering the surface termination elements, we explore the intricate geometries of IL intercalation in neutral, negative, and positive pore systems. Accurate estimation of charge transfer is achieved through five population analysis models, such as Hirshfeld, Hirshfeld-I, DDEC6 (density derived electrostatic and chemical), Bader, and VDD (voronoi deformation density) charges. In this work, we recommend the DDEC6 and Hirshfeld-I charge models, as they offer moderate values and exhibit reasonable trends. The investigation, aimed at visualizing non-covalent interactions, elucidates the role of cation-MXene and anion-MXene interactions in governing the intercalation phenomenon of ionic liquids within MXenes. The magnitude of this role depends on two factors: the specific arrangement of the cation, and the nature of the anionic species involved in the process.

Intrinsic anomalous, spin and valley Hall effects in 'ex-so-tic' van-der-Waals structures

We consider the anomalous, spin, valley, and valley spin Hall effects in a pristine graphene-based van-der-Waals (vdW) heterostructure consisting of a bilayer graphene (BLG) sandwiched between a semiconducting van-der-Waals material with strong spin-orbit coupling (e.g., WS 2 ) and a ferromagnetic insulating vdW material (e.g. Cr 2 Ge 2 Te 6 ). Due to the exchange proximity effect from one side and spin-orbit proximity effect from the other side of graphene, such a structure is referred to as graphene based 'ex-so-tic' structure. First, we derive an effective Hamiltonian describing the low-energy states of the structure. Then, using the Green's function formalism, we obtain analytical results for the Hall conductivities as a function of the Fermi energy and gate voltage. For specific values of these parameters, we find a quantized valley Hall conductivity.

Robust Field-Free Switching Using Large Unconventional Spin-Orbit Torque in an All-Van der Waals Heterostructure

The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in all-vdW heterostructures, large unconventional SOT remains elusive and the robustness of the field-free switching against external magnetic field has not been examined, which hinders further applications. Here, the study demonstrates the field-free switching in an all-vdW heterostructure combining a type-II Weyl semimetal TaIrTe4 and above-room-temperature ferromagnet Fe3GaTe2. The fully field-free switching can be achieved at 2.56 × 1010 A m-2 at 300 K and a large SOT effective field efficiency of the out-of-plane polarized spin current generated by TaIrTe4 is determined to be 0.37. Moreover, it is found that the switching polarity cannot be changed until the external in-plane magnetic field reaches 252 mT, indicating a robust switching against the magnetic field. The numerical simulation suggests the large unconventional SOT reduces the switching current density and enhances the robustness of the switching. The work shows that all-vdW heterostructures are promising candidates for future highly efficient and stable SOT-based devices.

Field-Free Spin-Orbit Torque Switching in Janus Chromium Dichalcogenides

We predict a very large spin-orbit torque (SOT) capability of magnetic chromium-based transition-metal dichalcogenide (TMD) monolayers in their Janus forms CrXTe, with X = S, Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of ∼100 V nm-1 in non-Janus CrTe2, completely out of experimental reach. By performing transport simulations on carefully derived Wannier tight-binding models, Janus systems are found to exhibit an SOT performance comparable to the most efficient two-dimensional materials, while additionally allowing for field-free perpendicular magnetization switching, due to their reduced in-plane symmetry. Altogether, our findings evidence that magnetic Janus TMDs stand as suitable candidates for ultimate SOT-MRAM devices in an ultracompact self-induced SOT scheme.

Enhancement of interlayer exchange coupling via intercalation in 2D magnetic bilayers: towards high Curie temperature

Two-dimensional magnetic materials are considered as promising candidates for developing next-generation spintronic devices by providing the possibility of scaling down to nanometers. However, a low Curie temperature is a crucial problem for practical applications, being intimately related to weak interlayer exchange coupling. Here, by using density functional theory calculations, we show that interlayer exchange coupling can be enhanced by intercalating 3d transition metals (Sc to Zn) into a bilayer of CrI3 and NiI2. It is found that intercalated Ni and Cr atoms exhibit strong antiferromagnetic coupling with the CrI3 and NiI2 host layers, respectively. This enhances the ferromagnetic interlayer exchange coupling between the host layers by many folds compared to pristine CrI3 and NiI2 bilayers. Moreover, both intercalated compounds show out-of-plane magnetic anisotropy with half metallic nature, which makes them ideal candidates for spintronics applications. Thereby our work provides a rational approach to raise the Curie temperature of non-metallic two-dimensional magnets by intercalation.

Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures

Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.

Imaging Negative Charge around Single Vanadium Dopant Atoms in Monolayer Tungsten Diselenide Using 4D Scanning Transmission Electron Microscopy

There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of doping depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution, as well as their interactions with other types of defects. A thorough atomic-level analysis is essential to fully understand these mechanisms. In this work, the vanadium-doped WSe2 monolayer grown by molecular beam epitaxy is investigated using four-dimensional scanning transmission electron microscopy (4D-STEM). Through center-of-mass-based reconstruction, atomic-scale maps are produced, allowing the visualization of both the electric field and the electrostatic potential around individual V atoms. To provide quantitative insights, these results are successfully compared to multislice image simulations based on ab initio calculations, accounting for lens aberrations. Finally, a negative charge around the V dopants is detected as a drop in the electrostatic potential, unambiguously demonstrating that 4D-STEM can be used to detect and to accurately analyze single-dopant charge states in semiconducting 2D materials.

Enhancing simulation feasibility for multi-layer 2D MoS2 RRAM devices: reliability performance learnings from a passive network model

While two-dimensional (2D) MoS2 has recently shown promise as a material for resistive random-access memory (RRAM) devices due to its demonstrated resistive switching (RS) characteristics, its practical application faces a significant challenge in industry regarding its limited yield and endurance. Our earlier work introduced an effective switching layer model to understand RS behavior in both mono- and multi-layered MoS2. However, functioning as a phenomenological percolation modeling tool, it lacks the capability to accurately simulate the intricate current-voltage (I-V) characteristics of the device, thereby hindering its practical applicability in 2D RRAM research. In contrast to the established conductive filament model for oxide-based RRAM, the RS mechanism in 2D RRAM remains elusive. This paper presents a novel simulator aimed at providing an intuitive, visual representation of the stochastic behaviors involved in the RS process of multi-layer 2D MoS2 RRAM devices. Building upon the previously proposed phenomenological simulator for 2D RRAM, users can now simulate both the I-V characteristics and the resistive switching behaviors of the RRAM devices. Through comparison with experimental data, it was observed that yield and endurance characteristics are linked to defect distributions in MoS2.

First-Principles Simulation and Materials Screening for Spin-Orbit Torque in 2D van der Waals Heterostructures

Recent advancements in spin-orbit torque (SOT) technology in two-dimensional van der Waals (2D vdW) materials have not only pushed spintronic devices to their atomic limits but have also unveiled unconventional torques and novel spin-switching mechanisms. The vast diversity of SOT observed in numerous 2D vdW materials necessitates a screening strategy to identify optimal materials for torque device performance. However, such a strategy has yet to be established. To address this critical issue, a combination of density functional theory and non-equilibrium Green's function is employed to calculate the SOT in various 2D vdW bilayer heterostructures. This leads to the discovery of three high SOT systems: WTe2/CrSe2, MoTe2/VS2, and NbSe2/CrSe2. Furthermore, a figure of merit that allows for rapid and efficient estimation of SOT is proposed, enabling high-throughput screening of optimal materials and devices for SOT applications in the future.

Large-Scale Direct Growth of Monolayer MoS2 on Patterned Graphene for van der Waals Ultrafast Photoactive Circuits

Two-dimensional (2D) van der Waals heterostructures combine the distinct properties of individual 2D materials, resulting in metamaterials, ideal for emergent electronic, optoelectronic, and spintronic phenomena. A significant challenge in harnessing these properties for future hybrid circuits is their large-scale realization and integration into graphene interconnects. In this work, we demonstrate the direct growth of molybdenum disulfide (MoS2) crystals on patterned graphene channels. By enhancing control over vapor transport through a confined space chemical vapor deposition growth technique, we achieve the preferential deposition of monolayer MoS2 crystals on monolayer graphene. Atomic resolution scanning transmission electron microscopy reveals the high structural integrity of the heterostructures. Through in-depth spectroscopic characterization, we unveil charge transfer in Graphene/MoS2, with MoS2 introducing p-type doping to graphene, as confirmed by our electrical measurements. Photoconductivity characterization shows that photoactive regions can be locally created in graphene channels covered by MoS2 layers. Time-resolved ultrafast transient absorption (TA) spectroscopy reveals accelerated charge decay kinetics in Graphene/MoS2 heterostructures compared to standalone MoS2 and upconversion for below band gap excitation conditions. Our proof-of-concept results pave the way for the direct growth of van der Waals heterostructure circuits with significant implications for ultrafast photoactive nanoelectronics and optospintronic applications.

Recent Advances on Pulsed Laser Deposition of Large-Scale Thin Films

2D thin films, possessing atomically thin thickness, are emerging as promising candidates for next-generation electronic devices, due to their novel properties and high performance. In the early years, a wide variety of 2D materials are prepared using several methods (mechanical/liquid exfoliation, chemical vapor deposition, etc.). However, the limited size of 2D flakes hinders their fundamental research and device applications, and hence the effective large-scale preparation of 2D films is still challenging. Recently, pulsed laser deposition (PLD) has appeared to be an impactful method for wafer-scale growth of 2D films, owing to target-maintained stoichiometry, high growth rate, and efficiency. In this review, the recent advances on the PLD preparation of 2D films are summarized, including the growth mechanisms, strategies, and materials classification. First, efficacious strategies of PLD growth are highlighted. Then, the growth, characterization, and device applications of various 2D films are presented, such as graphene, h-BN, MoS2, BP, oxide, perovskite, semi-metal, etc. Finally, the potential challenges and further research directions of PLD technique is envisioned.

Emerging Spin-Orbit Torques in Low-Dimensional Dirac Materials

We report a theoretical description of novel spin-orbit torque components emerging in two-dimensional Dirac materials with broken inversion symmetry. In contrast to usual metallic interfaces where fieldlike and dampinglike torque components are competing, we find that an intrinsic dampinglike torque which derives from all Fermi-sea electrons can be simultaneously enhanced along with the fieldlike component. Additionally, hitherto overlooked torque components unique to Dirac materials emerge from the coupling between spin and pseudospin angular momenta, leading to spin-pseudospin entanglement. These torques are found to be resilient to disorder and could enhance the magnetic switching performance of nearby magnets.

Synthesis of Few-Layer Hexagonal Boron Nitride for Magnetic Tunnel Junction Application

Hexagonal boron nitride (hBN), a wide-gap two-dimensional (2D) insulator, is an ideal tunneling barrier for many applications because of the atomically flat surface, high crystalline quality, and high stability. Few-layer hBN with a thickness of 1-2 nm is an effective barrier for electron tunneling, but the preparation of few-layer hBN relies on mechanical exfoliation from bulk hBN crystals. Here, we report the large-area growth of few-layer hBN by chemical vapor deposition on ferromagnetic Ni-Fe thin films and its application to tunnel barriers of magnetic tunnel junction (MTJ) devices. Few-layer hBN sheets mainly consisting of two to three layers have been successfully synthesized on a Ni-Fe catalyst at a high growth temperature of 1200 °C. The MTJ devices were fabricated on as-grown hBN by using the Ni-Fe film as the bottom ferromagnetic electrode to avoid contamination and surface oxidation. We found that trilayer hBN gives a higher tunneling magnetoresistance (TMR) ratio than bilayer hBN, resulting in a high TMR ratio up to 10% at ∼10 K.

Field-Free Manipulation of Two-Dimensional Ferromagnet CrTe2 by Spin-Orbit Torques

Electrical manipulation of magnetic states in two-dimensional ferromagnetic systems is crucial in information storage and low-dimensional spintronics. Spin-orbit torque presents a rapid and energy-efficient method for electrical control of the magnetization. In this letter, we demonstrate a wafer-scale spin-orbit torque switching of two-dimensional ferromagnetic states. Using molecular beam epitaxy, we fabricate two-dimensional heterostructures composed of low crystal-symmetry WTe2 and ferromagnet CrTe2 with perpendicular anisotropy. By utilizing out-of-plane spins generated from WTe2, we achieve field-free switching of the CrTe2 perpendicular magnetization. The threshold switching current density in CrTe2/WTe2 is 1.2 × 106 A/cm2, 20 times smaller than that of the CrTe2/Pt control sample even with an external magnetic field. In addition, the switching behavior can be modulated by external magnetic fields and crystal symmetry. Our findings demonstrate a controllable and all-electric manipulation of perpendicular magnetization in a two-dimensional ferromagnet, representing a significant advancement toward the practical implementation of low-dimensional spintronic devices.

Two-Dimensional Ultrathin Fe3Sn2 Kagome Metal with Defect-Dependent Magnetic Property

Two-dimensional (2D) Fe3Sn2, which is a room-temperature ferromagnetic kagome metal, has potential applications in spintronic devices. However, the systematic synthesis and magnetic study of 2D Fe3Sn2 single crystals have rarely been reported. Here we have synthesized 2D hexagonal and triangular Fe3Sn2 nanosheets by controlling the amount of FeCl2 precursors in the chemical vapor deposition (CVD) method. It is found that the hexagonal Fe3Sn2 nanosheets exist with Fe vacancy defects and show no obvious coercivity. While the triangular Fe3Sn2 nanosheet has obvious hysteresis loops at room temperature, its coercivity first increases and then remains stable with an increase in temperature, which should result from the competition of the thermal activation mechanism and spin direction rotation mechanism. A first-principles calculation study shows that the Fe vacancy defects in Fe3Sn2 can increase the distances between Fe atoms and weaken the ferromagnetism of Fe3Sn2. The resulting 2D Fe3Sn2 nanosheets provide a new choice for spintronic devices.

2D Air-Stable Nonlayered Ferrimagnetic FeCr2S4 Crystals Synthesized via Chemical Vapor Deposition

The discovery of intrinsic 2D magnetic materials has opened up new opportunities for exploring magnetic properties at atomic layer thicknesses, presenting potential applications in spintronic devices. Here a new 2D ferrimagnetic crystal of nonlayered FeCr2S4 is synthesized with high phase purity using chemical vapor deposition. The obtained 2D FeCr2S4 exhibits perpendicular magnetic anisotropy, as evidenced by the out-of-plane/in-plane Hall effect and anisotropic magnetoresistance. Theoretical calculations further elucidate that the observed magnetic anisotropy can be attributed to its surface termination structure. By combining temperature-dependent magneto-transport and polarized Raman spectroscopy characterizations, it is discovered that both the measured Curie temperature and the critical temperature at which a low energy magnon peak disappeared remains constant, regardless of its thickness. Magnetic force microscopy measurements show the flipping process of magnetic domains. The exceptional air-stability of the 2D FeCr2S4 is also confirmed via Raman spectroscopy and Hall hysteresis loops. The robust anisotropic ferrimagnetism, the thickness-independent of Curie temperature, coupled with excellent air-stability, make 2D FeCr2S4 crystals highly attractive for future spintronic devices.

Field-free switching of perpendicular magnetization by two-dimensional PtTe2/WTe2 van der Waals heterostructures with high spin Hall conductivity

The key challenge of spin-orbit torque applications lies in exploring an excellent spin source capable of generating out-of-plane spins while exhibiting high spin Hall conductivity. Here we combine PtTe2 for high spin conductivity and WTe2 for low crystal symmetry to satisfy the above requirements. The PtTe2/WTe2 bilayers exhibit a high in-plane spin Hall conductivity σs,y ≈ 2.32 × 105 × ħ/2e Ω-1 m-1 and out-of-plane spin Hall conductivity σs,z ≈ 0.25 × 105 × ħ/2e Ω-1 m-1, where ħ is the reduced Planck's constant and e is the value of the elementary charge. The out-of-plane spins in PtTe2/WTe2 bilayers enable the deterministic switching of perpendicular magnetization at room temperature without magnetic fields, and the power consumption is 67 times smaller than that of the Pt control case. The high out-of-plane spin Hall conductivity is attributed to the conversion from in-plane spin to out-of-plane spin, induced by the crystal asymmetry of WTe2. Our work establishes a low-power perpendicular magnetization manipulation based on wafer-scale two-dimensional van der Waals heterostructures.

Large out-of-plane spin-orbit torque in topological Weyl semimetal TaIrTe4

The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque (SOT) materials provide only an in-plane spin-polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin-polarized current components, which are not suitable for energy-efficient SOT applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using the topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin-torque ferromagnetic resonance (STFMR) and second harmonic Hall measurements on devices based on TaIrTe4/Ni80Fe20 heterostructures and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be (4.05 ± 0.23)×104 (ℏ ⁄ 2e) (Ωm)-1, which is an order of magnitude higher than the reported values in other materials.

Above-room-temperature chiral skyrmion lattice and Dzyaloshinskii-Moriya interaction in a van der Waals ferromagnet Fe3-xGaTe2

Skyrmions in existing 2D van der Waals (vdW) materials have primarily been limited to cryogenic temperatures, and the underlying physical mechanism of the Dzyaloshinskii-Moriya interaction (DMI), a crucial ingredient for stabilizing chiral skyrmions, remains inadequately explored. Here, we report the observation of Néel-type skyrmions in a vdW ferromagnet Fe3-xGaTe2 above room temperature. Contrary to previous assumptions of centrosymmetry in Fe3-xGaTe2, the atomic-resolution scanning transmission electron microscopy reveals that the off-centered FeΙΙ atoms break the spatial inversion symmetry, rendering it a polar metal. First-principles calculations further elucidate that the DMI primarily stems from the Te sublayers through the Fert-Lévy mechanism. Remarkably, the chiral skyrmion lattice in Fe3-xGaTe2 can persist up to 330 K at zero magnetic field, demonstrating superior thermal stability compared to other known skyrmion vdW magnets. This work provides valuable insights into skyrmionics and presents promising prospects for 2D material-based skyrmion devices operating beyond room temperature.

Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures

The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 - 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from - 50% to + 69% in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices.

Van der Waals Magnetic Electrode Transfer for Two-Dimensional Spintronic Devices

Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to induce defects at the interfaces. Meanwhile, the difficulties in picking up FM metals with strong adhesion and in achieving conductance match between FM electrodes and spin transport channels make it challenging to fabricate high-quality 2D spintronic devices using metal transfer techniques. Here, we report a solvent-free magnetic electrode transfer technique that employs a graphene layer to assist in the transfer of FM metals. It also serves as part of the FM electrode after transfer for optimizing spin injection, which enables the realization of spin valves with excellent performance based on various 2D materials. In addition to two-terminal devices, we demonstrate that the technique is applicable for four-terminal spin valves with nonlocal geometry. Our results provide a promising future of realizing 2D spintronic applications using the developed magnetic electrode transfer technique.

Stacking-dependent interlayer magnetic interactions in CrSe2

Recently, CrSe2, a new ferromagnetic van der Waals two-dimensional material, was discovered to be highly stable under ambient conditions, making it an attractive candidate for fundamental research and potential device applications. Here, we study the interlayer interactions of bilayer CrSe2using first-principles calculations. We demonstrate that the interlayer interaction depends on the stacking structure. The AA and AB stackings exhibit antiferromagnetic (AFM) interlayer interactions, while the AC stacking exhibits ferromagnetic (FM) interlayer interaction. Furthermore, the interlayer interaction can be further tuned by tensile strain and charge doping. Specifically, under large tensile strain, most stacking structures exhibit FM interlayer interactions. Conversely, under heavy electron doping, all stacking structures exhibit AFM interlayer interactions. These findings are useful for designing spintronic devices based on CrSe2.

Low-Temperature Vapor-Phase Growth of 2D Metal Chalcogenides

2D metal chalcogenides (MCs) have garnered significant attention from both scientific and industrial communities due to their potential in developing next-generation functional devices. Vapor-phase deposition methods have proven highly effective in fabricating high-quality 2D MCs. Nevertheless, the conventionally high thermal budgets required for synthesizing 2D MCs pose limitations, particularly in the integration of multiple components and in specialized applications (such as flexible electronics). To overcome these challenges, it is desirable to reduce the thermal energy requirements, thus facilitating the growth of various 2D MCs at lower temperatures. Numerous endeavors have been undertaken to develop low-temperature vapor-phase growth techniques for 2D MCs, and this review aims to provide an overview of the latest advances in low-temperature vapor-phase growth of 2D MCs. Initially, the review highlights the latest progress in achieving high-quality 2D MCs through various low-temperature vapor-phase techniques, including chemical vapor deposition (CVD), metal-organic CVD, plasma-enhanced CVD, atomic layer deposition (ALD), etc. The strengths and current limitations of these methods are also evaluated. Subsequently, the review consolidates the diverse applications of 2D MCs grown at low temperatures, covering fields such as electronics, optoelectronics, flexible devices, and catalysis. Finally, current challenges and future research directions are briefly discussed, considering the most recent progress in the field.

Designing semiconductor materials and devices in the post-Moore era by tackling computational challenges with data-driven strategies

In the post-Moore's law era, the progress of electronics relies on discovering superior semiconductor materials and optimizing device fabrication. Computational methods, augmented by emerging data-driven strategies, offer a promising alternative to the traditional trial-and-error approach. In this Perspective, we highlight data-driven computational frameworks for enhancing semiconductor discovery and device development by elaborating on their advances in exploring the materials design space, predicting semiconductor properties and optimizing device fabrication, with a concluding discussion on the challenges and opportunities in these areas.

Thickness-Dependent Gilbert Damping and Soft Magnetism in Metal/Co-Fe-B/Metal Sandwich Structure

The achievement of the low Gilbert damping parameter in spin dynamic modulation is attractive for spintronic devices with low energy consumption and high speed. Metallic ferromagnetic alloy Co-Fe-B is a possible candidate due to its high compatibility with spintronic technologies. Here, we report thickness-dependent damping and soft magnetism in Co-Fe-B films sandwiched between two non-magnetic layers with Co-Fe-B films up to 50 nm thick. A non-monotonic variation of Co-Fe-B film damping with thickness is observed, which is in contrast to previously reported monotonic trends. The minimum damping and the corresponding Co-Fe-B thickness vary significantly among the different non-magnetic layer series, indicating that the structure selection significantly alters the relative contributions of various damping mechanisms. Thus, we developed a quantitative method to distinguish intrinsic from extrinsic damping via ferromagnetic resonance measurements of thickness-dependent damping rather than the traditional numerical calculation method. By separating extrinsic and intrinsic damping, each mechanism affecting the total damping of Co-Fe-B films in sandwich structures is analyzed in detail. Our findings have revealed that the thickness-dependent damping measurement is an effective tool for quantitatively investigating different damping mechanisms. This investigation provides an understanding of underlying mechanisms and opens up avenues for achieving low damping in Co-Fe-B alloy film, which is beneficial for the applications in spintronic devices design and optimization.

Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits

Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.

Electrical Control of Spin and Valley in Spin-Orbit Coupled Graphene Multilayers

Electrical control of magnetism has been a major technological pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, we propose and analyze a new mechanism for electrical switching of isospin, using chiral-stacked graphene multilayers, such as Bernal bilayer graphene or rhombohedral trilayer graphene, encapsulated by transition metal dichalcogenide (TMD) substrates. Leveraging the proximity-induced spin-orbit coupling from the TMD, we demonstrate electrical switching of correlation-induced spin and/or valley polarization, by reversing a perpendicular displacement field or the chemical potential. We substantiate our proposal with both analytical arguments and self-consistent Hartree-Fock numerics. Finally, we illustrate how the relative alignment of the TMDs, together with the top and bottom gate voltages, can be used to selectively switch distinct isospin flavors, putting forward correlated Van der Waals heterostructures as a promising platform for spintronics and valleytronics.