Ferroelectricity in strain-free SrTiO3 thin films

Interface phenomena and emerging functionalities in ferroelectric oxide based heterostructures

Capitalizing on the nonvolatile, nanoscale controllable polarization, ferroelectric perovskite oxides can be integrated with various functional materials for designing emergent phenomena enabled by charge, lattice, and polar symmetry mediated interfacial coupling, as well as for constructing novel energy-efficient electronics and nanophotonics with programmable functionalities. When prepared in thin film or membrane forms, the ferroelectric instability of these materials is highly susceptible to the interfacial electrostatic and mechanical boundary conditions, resulting in tunable polarization fields and Curie temperatures and domain formation. This review focuses on two types of ferroelectric oxide-based heterostructures: the epitaxial perovskite oxide heterostructures and the ferroelectric oxides interfaced with two-dimensional van der Waals materials. The topics covered include the basic synthesis methods for ferroelectric oxide thin films, membranes, and heterostructures, characterization of their properties, and various emergent phenomena hosted by the heterostructures, including the polarization-controlled metal-insulator transition and magnetic anisotropy, negative capacitance effect, domain-imposed one-dimensional graphene superlattices, programmable second harmonic generation, and interface-enhanced polar alignment and piezoelectric response, as well as their applications in nonvolatile memory, logic, and reconfigurable optical devices. Possible future research directions are also outlined, encompassing the synthesis via remote epitaxy and oxide moiré engineering, incorporation of binary ferroelectric oxides, realization of topological properties, and functional design of oxygen octahedral rotation.

Characterization of the Microstructure of Sr0.75Ba0.25Nb2O6 Thin Films by Brillouin Light Scattering

Strontium-barium niobate (SrxBa(1-x)Nb2O6) films can be considered as a promising material for microwave applications due to high dielectric nonlinearity and relatively low losses. Since strontium-barium niobate has a disordered structure that determines its unique electrical properties, the identification of structural features of the SrxBa(1-x)Nb2O6 films is the key to their successful use. The SrxBa(1-x)Nb2O6 films were synthesized on a sapphire substrate by magnetron sputtering. The structure of the films was studied by both traditional methods of electron microscopy, X-ray diffraction, and the rarely used for thin films investigation Brillouin light scattering method, which was the focus of our study. We show that Brillouin light scattering is an excellent nondestructive method for studying the structural features of thin ferroelectric strontium-barium niobate films. An analysis of the features of the Brillouin light scattering spectra in thin-film structures and their comparison with the spectra of bulk crystals allowed us to determine with high accuracy the thickness of the films under study and their structural features determined by the resonant scattering of acoustic waves.

High Temperature-Insensitive Electrostrain Obtained in (K, Na)NbO3-Based Lead-Free Piezoceramics

Over the last decades, notable progress is achieved in (K, Na)NbO3 (KNN)-based lead-free piezoceramics. However, more studies are conducted to increase its piezoelectric charge coefficient (d33). For actuator applications, piezoceramics need high electric-field induced strain under low electric fields while maintaining exceptional temperature stability across a wide temperature range. In this study, this work developes Li/Sb-codoped KNN (LKNNS) ceramics with high electrostrain by defect engineering and domain engineering. A remarkable strain of 0.43%, along with a giant d33* value of 2177 pm V-1, is attained in the LKNNS ceramic at 20 kV cm-1. The ceramic exhibits a minimal performance decrease of less than 15% over a temperature range from room temperature to 150 °C. The exceptional strain is attributed to the presence of A-site vacancy-oxygen vacancy (V A ' - V O • • ${\mathrm{V}}_{\mathrm{A}}^{{\prime}}{\mathrm{ - V}}_{\mathrm{O}}^{{\mathrm{ \bullet \bullet }}}$ ) defect dipoles and the increase in nano-domains. The hierarchical domain configuration andV A ' - V O • • ${\mathrm{V}}_{\mathrm{A}}^{{\prime}}{\mathrm{ - V}}_{\mathrm{O}}^{{\mathrm{ \bullet \bullet }}}$ defect dipoles impede the switched domains from reverting to their original state as temperature increases, furthermore, the elongated dipole moments ofV A ' - V O • • ${\mathrm{V}}_{\mathrm{A}}^{{\prime}}{\mathrm{ - V}}_{\mathrm{O}}^{{\mathrm{ \bullet \bullet }}}$ caused by rising temperatures compensate for strain reduction results in exceptional temperature stability. This study provides a model for designing piezoelectric materials with exceptional overall performance under low electric fields and across a wide temperature range.

Strain-Engineered Ferroelectricity in 2H Bilayer MoS2

The exploration of two-dimensional (2D) materials exhibiting out-of-plane ferroelectric and piezoelectric properties through interlayer twist/translation or strain, known as sliding ferroelectricity, has become a focal point in the quest for low-power electronic devices, capitalizing on weak van der Waals interactions. Herein, we delve into the behavior of strained bilayer molybdenum disulfide (2L-MoS2) transferred onto a nanocone-patterned substrate. An intriguing observation is the emergence of unexpected vertical ferroelectricity in MoS2, irrespective of whether it was prepared using chemical vapor deposition or mechanical exfoliation from the bulk crystal. Such an observation underscores the versatility and reproducibility of the emerging ferroelectricity across different preparation methods. Furthermore, the piezoelectric coefficients recorded are exceptionally high, with the values of 37.54 and 24.80 pm V-1 for monolayer and bilayer MoS2, respectively, outperforming most currently discovered 2D piezoelectrics. The presence of room-temperature out-of-plane ferroelectricity in strained 2L-MoS2 is confirmed through first-principles calculations and piezoresponse force microscopy. This ferroelectric behavior can be attributed to the symmetry breaking and interlayer sliding within the strained 2L-MoS2 structure. Our findings not only deepen the understanding of ferroelectricity in 2D materials but also offer insights for the design of 2D ferroelectrics, thereby enabling diverse functionalities and applications in ferroelectricity.

Superfine Nanodomain Engineering Unleashing Ferroelectricity in Incipient Ferroelectrics

Incipient ferroelectrics have emerged as an attractive class of functional materials owing to their potential to be engineered for exotic ferroelectric behavior, holding great promise for expanding the ferroelectric family. However, thus far, their artificially engineered ferroelectricity has fallen far short of rivaling classic ferroelectrics. In this study, we address this challenge by developing a superfine nanodomain engineering strategy. By applying this approach to representative incipient ferroelectric of SrTiO3-based films, we achieve unprecedentedly strong ferroelectricity, not only surpassing previous records for incipient ferroelectrics but also being comparable to classic ferroelectrics. The remanent polarization of the thin film reaches up to 17.0 μC cm-2 with an ultrahigh Curie temperature of 973 K. Atomic-scale investigations elucidate the origin of this robust ferroelectricity in the emergent high-density superfine nanodomains spanning merely 3-10 unit cells. Combining experimental results with theoretical assessments, we unveil the underlying mechanism, where the intentionally introduced diluted foreign Fe element creates a deeper Landau energy well and promotes a short-range ordering of polarization. Our developed strategy significantly streamlines the design of unconventional ferroelectrics, providing a versatile pathway for exploring new and superior ferroelectric materials.

Intrinsic-strain-induced ferroelectric order and ultrafine nanodomains in SrTiO3

Nano ferroelectrics holds the potential application promise in information storage, electro-mechanical transformation, and novel catalysts but encounters a huge challenge of size limitation and manufacture complexity on the creation of long-range ferroelectric ordering. Herein, as an incipient ferroelectric, nanosized SrTiO3 was indued with polarized ordering at room temperature from the nonpolar cubic structure, driven by the intrinsic three-dimensional (3D) tensile strain. The ferroelectric behavior can be confirmed by piezoelectric force microscopy and the ferroelectric TO1 soft mode was verified with the temperature stability to 500 K. Its structural origin comes from the off-center shift of Ti atom to oxygen octahedron and forms the ultrafine head-to-tail connected 90° nanodomains about 2 to 3 nm, resulting in an overall spontaneous polarization toward the short edges of nanoparticles. According to the density functional theory calculations and phase-field simulations, the 3D strain-related dipole displacement transformed from [001] to [111] and segmentation effect on the ferroelectric domain were further proved. The topological ferroelectric order induced by intrinsic 3D tensile strain shows a unique approach to get over the nanosized limitation in nanodevices and construct the strong strain-polarization coupling, paving the way for the design of high-performance and free-assembled ferroelectric devices.

Quantum fluctuations lead to glassy electron dynamics in the good metal regime of electron doped KTaO3

One of the central challenges in condensed matter physics is to comprehend systems that have strong disorder and strong interactions. In the strongly localized regime, their subtle competition leads to glassy electron dynamics which ceases to exist well before the insulator-to-metal transition is approached as a function of doping. Here, we report on the discovery of glassy electron dynamics deep inside the good metal regime of an electron-doped quantum paraelectric system: KTaO3. We reveal that upon excitation of electrons from defect states to the conduction band, the excess injected carriers in the conduction band relax in a stretched exponential manner with a large relaxation time, and the system evinces simple aging phenomena-a telltale sign of glassy dynamics. Most significantly, we observe a critical slowing down of carrier dynamics below 35 K, concomitant with the onset of quantum paraelectricity in the undoped KTaO3. Our combined investigation using second harmonic generation technique, density functional theory and phenomenological modeling demonstrates quantum fluctuation-stabilized soft polar modes as the impetus for the glassy behavior. This study addresses one of the most fundamental questions regarding the potential promotion of glassiness by quantum fluctuations and opens a route for exploring glassy dynamics of electrons in a well-delocalized regime.

Large Polarization Near 50 μC/cm2 in a Single Unit Cell Layer SrTiO3

The generally nonpolar SrTiO3 has attracted more attention recently because of its possibly induced novel polar states and related paraelectric-ferroelectric phase transitions. By using controlled pulsed laser deposition, high-quality, ultrathin, and strained SrTiO3 layers were obtained. Here, transmission electron microscopy and theoretical simulations have unveiled highly polar states in SrTiO3 films even down to one unit cell at room temperature, which were stabilized in the PbTiO3/SrTiO3/PbTiO3 sandwich structures by in-plane tensile strain and interfacial coupling, as evidenced by large tetragonality (∼1.05), notable polar ion displacement (0.019 nm), and thus ultrahigh spontaneous polarization (up to ∼50 μC/cm2). These values are nearly comparable to those of the strong ferroelectrics as the PbZrxTi1-xO3 family. Our findings provide an effective and practical approach for integrating large strain states into oxide films and inducing polarization in nonpolar materials, which may broaden the functionality of nonpolar oxides and pave the way for the discovery of new electronic materials.

Time-resolved nonlinear optical spectroscopy of perovskites

Ultrafast decay of optical phonons has been studied in wide-bandgap BaSnO3 and SrTiO3 perovskites using nonlinear spectroscopy with 120 femtosecond time resolution. The coherent Raman mode excitations have been selected and traced with tunable optical pulses. Decay of symmetry forbidden modes of vibrations have been detected directly in time. Phonon decay rates for the main LO- and TO- phonon modes have been found to be within 1.36-1.78 ps-1 and are explained in terms of parametric phonon interactions and pure dephasing mechanisms in the materials that are of interest in microelectronic applications.

Giant tunnel resistance effect in (SrTiO3)2/(BaTiO3)4/(CaTiO3)2 asymmetric superlattice with enhanced polarization

In this work, we report the effectively enhanced tunneling electroresistance effect in Au/(SrTiO3)2/(BaTiO3)4/(CaTiO3)2/Nb:SrTiO3 superlattice ferroelectric tunnel junction (FTJ). The stable polarization switching and enhanced ferroelectricity were achieved in the nanoscale thickness high-quality epitaxial superlattice. A high ON/OFF current ratio of more than 105 was obtained at room temperature, which is an order of magnitude larger than the BaTiO3 FTJ with the same structure. Nonvolatile resistance switching controlled by nonvolatile polarization switching was observed in the superlattice FTJ. Driven by increased polarization and intrinsic asymmetric ferroelectricity, a highly asymmetric depolarization field is generated compared with the Au/BaTiO3/Nb:SrTiO3 FTJ, resulting in an enhanced tunneling electroresistance effect. These results provide a potential way to construct FTJ memory devices by constructing asymmetric three-component ferroelectric superlattices.

Charge Transfer and Orbital Reconstruction at an Organic-Oxide Interface

The two-dimensional electron system (2DES) located at the surface of strontium titanate (STO) and at several other STO-based interfaces has been an established platform for the study of novel physical phenomena since its discovery. Here we report how the interfacing of STO and tetracyanoquinodimethane (TCNQ) results in a charge transfer that depletes the number of free carriers at the STO surface, with a strong impact on its electronic structure. Our study paves the way for efficient tuning of the electronic properties, which promises novel applications in the framework of oxide/organic-based electronics.

Modeling of the Lattice Dynamics in Strontium Titanate Films of Various Thicknesses: Raman Scattering Studies

While the bulk strontium titanate (STO) crystal characteristics are relatively well known, ultrathin perovskites' nanostructure, chemical composition, and crystallinity are quite complex and challenging to understand in detail. In our study, the DFT methods were used for modelling the Raman spectra of the STO bulk (space group I4/mcm) and 5-21-layer thin films (layer group p4/mbm) in tetragonal phase with different thicknesses ranging from ~0.8 to 3.9 nm. Our calculations revealed features in the Raman spectra of the films that were absent in the bulk spectra. Out of the seven Raman-active modes associated with bulk STO, the frequencies of five modes (2Eg, A1g, B2g, and B1g) decreased as the film thickness increased, while the low-frequency B2g and higher-frequency Eg modes frequencies increased. The modes in the films exhibited vibrations with different amplitudes in the central or surface parts of the films compared to the bulk, resulting in frequency shifts. Some peaks related to bulk vibrations were too weak (compared to the new modes related to films) to distinguish in the Raman spectra. However, as the film thickness increased, the Raman modes approached the frequencies of the bulk, and their intensities became higher, making them more noticeable in the Raman spectrum. Our results could help to explain inconsistencies in the experimental data for thin STO films, providing insights into the behavior of Raman modes and their relationship with film thickness.

Prominent Size Effects without a Depolarization Field Observed in Ultrathin Ferroelectric Oxide Membranes

The increasing miniaturization of electronics requires a better understanding of material properties at the nanoscale. Many studies have shown that there is a ferroelectric size limit in oxides, below which the ferroelectricity will be strongly suppressed due to the depolarization field, and whether such a limit still exists in the absence of the depolarization field remains unclear. Here, by applying uniaxial strain, we obtain pure in-plane polarized ferroelectricity in ultrathin SrTiO_{3} membranes, providing a clean system with high tunability to explore ferroelectric size effects especially the thickness-dependent ferroelectric instability with no depolarization field. Surprisingly, the domain size, ferroelectric transition temperature, and critical strain for room-temperature ferroelectricity all exhibit significant thickness dependence. These results indicate that the stability of ferroelectricity is suppressed (enhanced) by increasing the surface or bulk ratio (strain), which can be explained by considering the thickness-dependent dipole-dipole interactions within the transverse Ising model. Our study provides new insights into ferroelectric size effects and sheds light on the applications of ferroelectric thin films in nanoelectronics.

Sub-nanometer-scale mapping of crystal orientation and depth-dependent structure of dislocation cores in SrTiO3

Defects in crystals play a fundamental role in modulating mechanical, electrical, luminescent, and magnetic behaviors of materials. However, accurate measurement of defect structures is hindered by symmetry breaking and the corresponding complex modifications in atomic configuration and/or crystal tilt at the defects. Here, we report the deep-sub-angstrom resolution imaging of dislocation cores via multislice electron ptychography with adaptive propagator, which allows sub-nanometer scale mapping of crystal tilt in the vicinity of dislocation cores and simultaneous recovery of depth-dependent atomic structure of dislocations. The realization of deep-sub-angstrom resolution and depth-dependent imaging of defects shows great potential in revealing microstructures and properties of real materials and devices.

Colossal Room-Temperature Ferroelectric Polarizations in SrTiO3/SrRuO3 Superlattices Induced by Oxygen Vacancies

Artificial superlattices have demonstrated many unique phenomena not found in bulk materials. For this investigation, SrTiO₃/SrRuO₃ paraelectric/metallic superlattices with various stacking periods were synthesized via pulsed laser deposition. A robust room-temperature ferroelectric polarization (∼46 μC/cm²) was found in the superlattices with 2 unit cell (u.c.) thick SrRuO₃ layers, despite the fact that neither SrTiO₃ nor SrRuO₃ is inherently ferroelectric. Results obtained from atomically resolved elemental mapping and X-ray photoelectron spectroscopy verified that oxygen vacancies accumulated at the SrTiO₃/SrRuO₃ interfaces, causing lattice distortions and increased tetragonality (c/a). The observed ferroelectric responses can be mainly attributed to the broken spatial inversion symmetry induced by the ordered distribution of oxygen vacancies at the SrTiO₃/SrRuO₃ interfaces, coupled with the triggering of external electric field. The resulting polarization mechanism induced by oxygen vacancies suggests viable ways for improving the electrical properties of ferroelectric materials, with the goal of expanding the functionality of a range of electronic devices.

Pressure-Dependent Structure of BaZrO3 Crystals as Determined by Raman Spectroscopy

The structure of dielectric perovskite BaZrO₃, long known to be cubic at room temperature without any structural phase transition with variation in temperature, has been recently disputed to have different ground state structures with lower symmetries involving octahedra rotation. Pressure-dependent Raman scattering measurements can identify the hierarchy of energetically-adjacent polymorphs, helping in turn to understand its ground state structure at atmospheric pressure. Here, the Raman scattering spectra of high-quality BaZrO₃ single crystals grown by the optical floating zone method are investigated in a pressure range from 1 atm to 42 GPa. First, based on the analyses of the infrared and Raman spectra measured at atmospheric pressure, it was found that all the observed vibrational modes could be assigned according to the cubic Pm3¯m structure. In addition, by applying pressure, two structural phase transitions were found at 8.4 and 19.2 GPa, one from the cubic to the rhombohedral R3¯c phase and the other from the rhombohedral to the tetragonal I4/mcm phase. Based on the two pressure-induced structural phase transitions, the true ground state structure of BaZrO₃ at room temperature and ambient pressure was corroborated to be cubic while the rhombohedral phase was the closest second.

Anomalous transport in high-mobility superconducting SrTiO3 thin films

The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO₃ films with a low-temperature mobility exceeding 42,000 cm² V^-1 s^-1 at a low carrier density of 3 × 10¹⁷ cm^-3 were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhancement in the superconducting transition temperature were observed across the second Lifshitz transition where the third band becomes occupied, revealing dominant intraband scattering. These films further revealed an anomalous behavior in the Hall carrier density as a consequence of the antiferrodistortive (AFD) transition and the temperature dependence of the Hall scattering factor. Using hybrid MBE growth, phenomenological modeling, temperature-dependent transport measurements, and scanning superconducting quantum interference device imaging, we provide critical insights into the important role of inter- versus intraband scattering and of AFD domain walls on normal-state and superconducting properties of SrTiO₃.

Atomistic Engineering of Phonons in Functional Oxide Heterostructures

Engineering of phonons, that is, collective lattice vibrations in crystals, is essential for manipulating physical properties of materials such as thermal transport, electron-phonon interaction, confinement of lattice vibration, and optical polarization. Most approaches to phonon-engineering have been largely limited to the high-quality heterostructures of III-V compound semiconductors. Yet, artificial engineering of phonons in a variety of materials with functional properties, such as complex oxides, will yield unprecedented applications of coherent tunable phonons in future quantum acoustic devices. In this study, artificial engineering of phonons in the atomic-scale SrRuO3 /SrTiO3 superlattices is demonstrated, wherein tunable phonon modes are observed via confocal Raman spectroscopy. In particular, the coherent superlattices led to the backfolding of acoustic phonon dispersion, resulting in zone-folded acoustic phonons in the THz frequency domain. The frequencies can be largely tuned from 1 to 2 THz via atomic-scale precision thickness control. In addition, a polar optical phonon originating from the local inversion symmetry breaking in the artificial oxide superlattices is observed, exhibiting emergent functionality. The approach of atomic-scale heterostructuring of complex oxides will vastly expand material systems for quantum acoustic devices, especially with the viability of functionality integration.

Presence of Delocalized Ti 3d Electrons in Ultrathin Single-Crystal SrTiO3

Strontium titanate (STO), with a wide spectrum of emergent properties such as ferroelectricity and superconductivity, has received significant attention in the community of strongly correlated materials. In the strain-free STO film grown on the SrRuO₃ buffer layer, the existing polar nanoregions can facilitate room-temperature ferroelectricity when the STO film thickness approaches 10 nm. Here we show that around this thickness scale, the freestanding STO films without the influence of a substrate show the tetragonal structure at room temperature, contrasting with the cubic structure seen in bulk form. The spectroscopic measurements reveal the modified Ti-O orbital hybridization that causes the Ti ion to deviate from its nominal 4+ valency (3d⁰ configuration) with excess delocalized 3d electrons. Additionally, the Ti ion in TiO₆ octahedron exhibits an off-center displacement. The inherent symmetry lowering in ultrathin freestanding films offers an alternative way to achieve tunable electronic structures that are of paramount importance for future technological applications.

Structural Phase Transition and In-Situ Energy Storage Pathway in Nonpolar Materials: A Review

Benefitting from exceptional energy storage performance, dielectric-based capacitors are playing increasingly important roles in advanced electronics and high-power electrical systems. Nevertheless, a series of unresolved structural puzzles represent obstacles to further improving the energy storage performance. Compared with ferroelectrics and linear dielectrics, antiferroelectric materials have unique advantages in unlocking these puzzles due to the inherent coupling of structural transitions with the energy storage process. In this review, we summarize the most recent studies about in-situ structural phase transitions in PbZrO₃-based and NaNbO₃-based systems. In the context of the ultrahigh energy storage density of SrTiO₃-based capacitors, we highlight the necessity of extending the concept of antiferroelectric-to-ferroelectric (AFE-to-FE) transition to broader antiferrodistortive-to-ferrodistortive (AFD-to-FD) transition for materials that are simultaneously ferroelastic. Combining discussion of the factors driving ferroelectricity, electric-field-driven metal-to-insulator transition in a (La_1−xSr_x)MnO₃ electrode is emphasized to determine the role of ionic migration in improving the storage performance. We believe that this review, aiming at depicting a clearer structure–property relationship, will be of benefit for researchers who wish to carry out cutting-edge structure and energy storage exploration.

Pure Spin Currents Driven by Colossal Spin-Orbit Coupling on Two-Dimensional Surface Conducting SrTiO3

Spin accumulation is generated by passing a charge current through a ferromagnetic layer and sensed by other ferromagnetic layers downstream. Pure spin currents can also be generated in which spin currents flow and are detected as a nonlocal resistance in which the charge current is diverted away from the voltage measurement point. Here, we report nonlocal spin-transport on two-dimensional surface-conducting SrTiO₃ (STO) without a ferromagnetic spin-injector via the spin Hall effect (and inverse spin Hall effect). By applying magnetic fields to the Hall bars at different angles to the nonlocal spin-diffusion, we demonstrate an anisotropic spin-signal that is consistent with a Hanle precession of a pure spin current. We extract key transport parameters for surface-conducting STO, including: a spin Hall angle of γ ≈ (0.25 ± 0.05), a spin lifetime of τ ∼ 49 ps, and a spin diffusion length of λ_s ≈ (1.23 ± 0.7) μm at 2 K.

Periodic Polarization Waves in a Strained, Highly Polar Ultrathin SrTiO3

SrTiO₃ is generally paraelectric with centrosymmetric structure exhibiting unique quantum fluctuation related ferroelectricity. Here we reveal highly polar and periodic polarization waves in SrTiO₃ at room temperature, which is stabilized by periodic tensile strains in a sandwiched PbTiO₃/SrTiO₃/PbTiO₃ structure. Scanning transmission electron microscopy reveals that periodic a/c domain structures in PbTiO₃ layers exert unique periodic tensile strains in the ultrathin SrTiO₃ layer and consequently make the highly polar and periodic states of SrTiO₃. The as-received polar SrTiO₃ layer features peak polar ion displacement of ∼0.01 nm and peak tetragonality of ∼1.07. These peak values are larger than previous results, which are comparable to that of bulk ferroelectric PbTiO₃. Our results suggest that it is possible to integrate large and periodic strain state in oxide films with exotic properties, which in turn could be useful in optical applications and information addressing when used as memory unit.

Two-Dimensional Room-Temperature Giant Antiferrodistortive SrTiO_{3} at a Grain Boundary

The broken symmetry at structural defects such as grain boundaries (GBs) discontinues chemical bonds, leading to the emergence of new properties that are absent in the bulk owing to the couplings between the lattice and other parameters. Here, we create a two-dimensional antiferrodistortive (AFD) strontium titanate (SrTiO_{3}) phase at a Σ13(510)/[001] SrTiO_{3} tilt GB at room temperature. We find that such an anomalous room-temperature AFD phase with the thickness of approximate six unit cells is stabilized by the charge doping from oxygen vacancies. The localized AFD originated from the strong lattice-charge couplings at a SrTiO_{3} GB is expected to play important roles in the electrical and optical activity of GBs and can explain past experiments such as the transport properties of electroceramic SrTiO_{3}. Our study also provides new strategies to create low-dimensional anomalous elements for future nanoelectronics via grain boundary engineering.

Strong Room-Temperature Ferroelectricity in Strained SrTiO3 Homoepitaxial Film

Although the discovery of exceptional ferroelectricity in paraelectrics offers great opportunities to enrich the diversity of the ferroelectric family and promote the development of novel functionalities, transformation of paraelectric phases into ferroelectric phases remains challenging. Herein, a method is presented for driving paraelectrics into ferroelectric states via the introduction of M/O-deficient (M for metal) perovskite nanoregions. Using this method, strong ferroelectricity, equivalent to that of classic ferroelectrics, is achieved in a prototype paraelectric strontium titanate (SrTiO₃ ) homoepitaxial film embedded with Ti/O-deficient perovskite nanoregions. It is shown that these unique nanoregions impose large out-of-plane tensile strain and electron-doping effects on the matrix to form a tetragonal structure (tetragonality = 1.038), driving the off-center movements of Ti and Sr atoms. This leads to a significant room-temperature ferroelectric polarization (maximum polarization = 41.6 µC cm^-2 and spontaneous polarization = 25.2 µC cm^-2 at 1.60 MV cm^-1 ) with a high thermal stability (T_stable  ≈ 1098 K). The proposed approach can be applied to various paraelectrics for creating ferroelectricity and generating emergent physical properties, opening the door to a new realm of materials design.

Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal-organic vapor phase epitaxy

Homoepitaxial growth of SrTiO3 thin films on 0.5 wt% niobium doped SrTiO3 (100) substrates with high structural perfection was developed using liquid-delivery spin metal-organic vapor phase epitaxy (MOVPE). Exploiting the advantage of adjusting the partial pressures of the individual constituents independently, we tuned the Sr/Ti ratio of the gas phase for realizing, stoichiometric, as well as Sr deficient layers. Quantitative energy dispersive X-ray spectroscopy in a scanning transmission electron microscope confirm Sr deficiency of up to 20% in nominally off-stoichiometrically grown films. Our MOVPE process allows to grow such layers in phase pure state and without extended defect formation. Indications for oxygen deficiency could not be identified. Sr deficient layers exhibit an increased permittivity of ɛr = 202 and a larger vertical lattice parameter. Current-voltage characteristics (IVCs) of metal-oxide-semiconductor (Pt/SrTiO3/SrTiO3:Nb) structures reveal that Sr deficient SrTiO3 films show an intrinsic resistive switching with on-off ratios of three orders of magnitude at RT and seven orders of magnitude at 10 K. There is strong evidence that a large deviation from stoichiometry pronounces the resistive switching behavior. IVCs conducted at 10 K indicate a defect-based mechanism instead of mass transport by ion diffusion. This is supported by in-situ STEM investigations that show filaments to form at significant higher voltages than those were resistive switching is observed in our samples.

Unraveling the Suppression of Oxygen Octahedra Rotations in A_{3}B_{2}O_{7} Ruddlesden-Popper Compounds: Engineering Multiferroicity and Beyond

The competition between polar distortions and BO_{6} octahedra rotations is well known to be critical in explaining the ground state of various ABO_{3} perovskites. Here, we show from first-principles calculations that a similar competition between interlayer rumpling and rotations is playing a key role in layered Ruddlesden-Popper (RP) perovskites. This competition explains the suppression of oxygen octahedra rotations and hybrid improper ferroelectricity in A_{3}B_{2}O_{7} compounds with rare-earth ions in the rocksalt layer and also appears relevant to other phenomena like negative thermal expansion and the dimensionality determined band gap in RP systems. Moreover, we highlight that RP perovskites offer more flexibility than ABO_{3} perovskites in controlling such a competition and four distinct strategies are proposed to tune it. These strategies are shown to be promising for designing new multiferroics. They are generic and might also be exploited for tuning negative thermal expansion and band gap.

Stabilizing hidden room-temperature ferroelectricity via a metastable atomic distortion pattern

Nonequilibrium atomic structures can host exotic and technologically relevant properties in otherwise conventional materials. Oxygen octahedral rotation forms a fundamental atomic distortion in perovskite oxides, but only a few patterns are predominantly present at equilibrium. This has restricted the range of possible properties and functions of perovskite oxides, necessitating the utilization of nonequilibrium patterns of octahedral rotation. Here, we report that a designed metastable pattern of octahedral rotation leads to robust room-temperature ferroelectricity in CaTiO3, which is otherwise nonpolar down to 0 K. Guided by density-functional theory, we selectively stabilize the metastable pattern, distinct from the equilibrium pattern and cooperative with ferroelectricity, in heteroepitaxial films of CaTiO3. Atomic-scale imaging combined with deep neural network analysis confirms a close correlation between the metastable pattern and ferroelectricity. This work reveals a hidden but functional pattern of oxygen octahedral rotation and opens avenues for designing multifunctional materials.

Induced ferroelectric phases in SrTiO3 by a nanocomposite approach

Inducing new phases in thick films via vertical lattice strain is one of the critical advantages of vertically aligned nanocomposites (VANs). In SrTiO₃ (STO), the ground state is ferroelastic, and the ferroelectricity in STO is suppressed by the orthorhombic transition. Here, we explore whether vertical lattice strain in three-dimensional VANs can be used to induce new ferroelectric phases in SrTiO₃:MgO (STO:MgO) VAN thin films. The STO:MgO system incorporates ordered, vertically aligned MgO nanopillars into a STO film matrix. Strong lattice coupling between STO and MgO imposes a large lattice strain in the STO film. We have investigated ferroelectricity in the STO phase, existing up to room temperature, using piezoresponse force microscopy, phase field simulation and second harmonic generation. We also serendipitously discovered the formation of metastable TiO nanocores in MgO nanopillars embedded in the STO film matrix. Our results emphasize the design of new phases via vertical epitaxial strain in VAN thin films.

Polar Rectification Effect in Electro-Fatigued SrTiO3-Based Junctions

Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into a direct one by allowing unidirectional charge flows. Analogous to the current-flow rectification for itinerary electrons, here, a polar rectification that is based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO₃ (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electrodegradation process. The different movabilities of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by an external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.

Enhancement of charge-mediated magnetoelectric coupling in Fe3O4/SrTiO3/Ba0.6Sr0.4TiO3 heterostructure

The in-plane magnetic hysteresis loops of Fe₃O₄/SrTiO₃(STO) and Fe₃O₄/STO/Ba_0.6Sr_0.4TiO₃(BSTO) heterostructures have been investigated at 200 K under various electric fields. The bottom BSTO layer of the STO/BSTO bilayer is used to improve the dielectric properties of the top STO layer. The polarization of the STO/BSTO bilayer is ∼78% larger than that of the STO layer at room temperature due to the improvement of surface topography and the contribution of electrostatic interlayer coupling. A significant enlargement (∼70%) in the magnetoelectric response of Fe₃O₄/STO/BSTO heterostructure has been achieved at 200 K and 300 kV cm^-1 after introducing the BSTO layer, since the STO/BSTO bilayer with larger dielectric constant supplies more polarization charges at its interface to the Fe₃O₄ layer than the STO layer. It indicates that the dielectric bilayer improves the polarization and thus benefits the magnetoelectric coupling in the multiferroic heterostructure.

High-Pressure Synthesis, Crystal Structures, and Properties of A-Site Columnar-Ordered Quadruple Perovskites NaRMn2Ti4O12 with R = Sm, Eu, Gd, Dy, Ho, Y

The formation of NaRMn₂Ti₄O₁₂ compounds (R = rare earth) under high pressure (about 6 GPa) and high temperature (about 1750 K) conditions was studied. Such compounds with R = Sm, Eu, Gd, Dy, Ho, Y adopt an A-site columnar-ordered quadruple-perovskite structure with the generic chemical formula A₂A'A″B₄O₁₂. Their crystal structures were studied by powder synchrotron X-ray and neutron diffraction between 1.5 and 300 K. They maintain a paraelectric structure with centrosymmetric space group P4₂/nmc (No. 137) at all temperatures, in comparison with the related CaMnTi₂O₆ perovskite, in which a ferroelectric transition occurs at 630 K. The centrosymmetric structure was also confirmed by second-harmonic generation. It has a cation distribution of [Na⁺R³⁺]_A[Mn²⁺]_A'[Mn²⁺]_A″[Ti⁴⁺₄]_BO₁₂ (to match with the generic chemical formula) with statistical distributions of Na⁺ and R³⁺ at the large A site and a strongly split position of Mn²⁺ at the square-planar A' site. We found a C-type long-range antiferromagnetic structure of Mn²⁺ ions at the A' and A″ sites below T_N = 12 K for R = Dy and found that the presence of Dy³⁺ disturbs the long-range ordering of Mn²⁺ below a second transition at lower temperatures. The first magnetic transition occurs below 8-13 K in all compounds, but the second magnetic transition occurs only for R = Dy, Sm, Eu. All compounds show large dielectric constants of a possible extrinsic origin similar to that of CaCu₃Ti₄O₁₂. NaRMn₂Ti₄O₁₂ with R = Er-Lu crystallized in the GdFeO₃-type Pnma perovskite structure, and NaRMn₂Ti₄O₁₂ with R = La, Nd contained two perovskite phases: an AA'₃B₄O₁₂-type Im3̅ phase and a GdFeO₃-type Pnma phase.

Symmetry degeneration and room temperature ferroelectricity in ion-irradiated SrTiO3

Polar phonon modes associated with room temperature ferroelectricity are observed in SrTiO3single crystals irradiated with Ti ions. Quantitative strain analysis reveals that irradiation-induced out-of-plane strain drives the centrosymmetric cubic SrTiO3to a tetragonal-like structure in the maximum damaged region. Energy transfer from ions to electrons during ion irradiation yields defects in SrTiO3that also plays an important role for the room temperature ferroelectricity. Different from thin film techniques, the ferroelectricity in the ion irradiated SrTiO3can occur for much larger thicknesses, depending on the energy and type of ion.

Pyroelectricity and field-induced spin-flop in (4-(Aminomethyl)pyridinium)2 MnCl4 · 2H2O

Large single crystals of (4-(Aminomethyl)pyridinium)₂ MnCl₄ · 2H₂O (1) were grown by slow evaporation of solution. The crystal structure was solved to be Pī, which belongs to the central symmetric space group. But small pyroelectric current was detected, as well as a ferroelectric hysteresis loop. The pyroelectric and the ferroelectric properties were attributed to the strain caused by defects. Temperature-dependent magnetic curves and the M-H curve show that 1 is antiferromagnetic ordering below 2.5 K. A field-induced spin-flop is observed in the antiferromagnetic ordering state.

Metastable ferroelectricity in optically strained SrTiO3

Fluctuating orders in solids are generally considered high-temperature precursors of broken symmetry phases. However, in some cases, these fluctuations persist to zero temperature and prevent the emergence of long-range order. Strontium titanate (SrTiO₃) is a quantum paraelectric in which dipolar fluctuations grow upon cooling, although a long-range ferroelectric order never sets in. Here, we show that optical excitation of lattice vibrations can induce polar order. This metastable polar phase, observed up to temperatures exceeding 290 kelvin, persists for hours after the optical pump is interrupted. Furthermore, hardening of a low-frequency vibration points to a photoinduced ferroelectric phase transition, with a spatial domain distribution suggestive of a photoflexoelectric coupling.

Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films

The effect of intrinsic point defects on relaxor properties of 0.68 PbMg_{1/3}Nb_{2/3}O_{3}-0.32 PbTiO_{3} thin films is studied across nearly 2 orders of magnitude of defect concentration via ex post facto ion bombardment. A weakening of the relaxor character is observed with increasing concentration of bombardment-induced point defects, which is hypothesized to be related to strong interactions between defect dipoles and the polarization. Although more defects and structural disorder are introduced in the system as a result of ion bombardment, the special type of defects that are likely to form in these polar materials (i.e., defect dipoles) can stabilize the direction of polarization against thermal fluctuations, and in turn, weaken relaxor behavior.

Ferroelectric switching in ferroelastic materials with rough surfaces

Electric switching of non-polar bulk crystals is shown to occur when domain walls are polar in ferroelastic materials and when rough surfaces with steps on an atomic scale promote domain switching. All domains emerging from surface nuclei possess polar domain walls. The progression of domains is then driven by the interaction of the electric field with the polarity of domain boundaries. In contrast, smooth surfaces with higher activation barriers prohibit effective domain nucleation. We demonstrate the existence of an electrically driven ferroelectric hysteresis loop in a non-ferroelectric, ferroelastic bulk material.

Real-Space Imaging of Orbital Selectivity on SrTiO3(001) Surface

Real-space access of the orbital degree of freedom in complex oxides is still challenging due to intricate electronic hybridization. Here, we report a direct observation of reproducible orbital-selective tunneling on a novel SrTiO₃(001) surface by scanning tunneling microscopy. The electronic structures reversibly switch between two different sets of symmetries depending on the sample bias, which is accompanied by a remarkable change in energy-dependent spectroscopy data. Tunneling spectrum combined with density functional theory calculations elucidates that symmetry-breaking at the surface determines the crystal-splitting field of e_g/t_2g orbitals with a strong in-plane anisotropy so that electrons alternatingly fill e_g and t_2g orbitals during the imaging process with different biases. This surface superstructure provides a new strategy toward understanding orbital textures and orbital selectivity in complex oxides.

Stabilizing the B-site oxidation state in ABO3 perovskite nanoparticles

The stabilization of the B-site oxidation state in ABO3 perovskites using wet-chemical methods is a synthetic challenge, which is of fundamental and practical interest for energy storage and conversion devices. In this work, defect-controlled (Sr-deficiency and oxygen vacancies) strontium niobium(iv) oxide (Sr1-xNbO3-δ, SNO) metal oxide nanoparticles (NPs) were synthesized for the first time using a low-pressure wet-chemistry synthesis. The experiments were performed under reduced oxygen partial pressure to prevent by-product formation and with varying Sr/Nb molar ratio to favor the formation of Nb4+ pervoskites. At a critical Sr to Nb ratio (Sr/Nb = 1.3), a phase transition is observed forming an oxygen-deficient SrNbO3 phase. Structural refinement on the resultant diffraction pattern shows that the SNO NPs consists of a near equal mixture of SrNbO3 and Sr0.7NbO3-δ crystal phases. A combination of Rietveld refinement and X-ray photoelectron spectroscopy (XPS) confirmed the stabilization of the +4 oxidation state and the formation of oxygen vacancies. The Nb local site symmetry was extracted through Raman spectroscopy and modeled using DFT. As further confirmation, the particles demonstrate the expected absorption highlighting their restored optoelectronic properties. This low-pressure wet-chemical approach for stabilizing the oxidation state of a transition metal has the potential to be extended to other oxygen sensitive, low dimensional perovskite oxides with unique properties.

Tuning Oxygen Vacancy Diffusion through Strain in SrTiO3 Thin Films

Understanding diffusion of oxygen vacancies in oxides under different external stimuli is crucial for the design of ion-based electronic devices, improvement of catalytic performance, and so forth. In this manuscript, using an external electric field produced by an atomic force microscopy tip, we obtain the room-temperature diffusion coefficient of oxygen-vacancies in thin films of SrTiO₃ under compressive/tensile epitaxial strain. Tensile strain produces a substantial increase of the diffusion coefficient, facilitating the mobility of vacancies through the film. Additionally, the effect of tip bias, pulse time, and temperature on the local concentration of vacancies is investigated. These are important parameters of control in the production and stabilization of nonvolatile states in ion-based devices. Our findings show the key role played by strain for the control of oxygen vacancy migration in thin-film oxides.

Atomic-Scale Measurement of Flexoelectric Polarization at SrTiO_{3} Dislocations

Owing to the broken translational symmetry at dislocations, a strain gradient naturally exists around the dislocation cores and can significantly influence the electrical and mechanical properties. We use aberration corrected scanning transmission electron microscopy to directly measure the flexoelectric polarization (∼28  μC cm^{-2}) at dislocation cores in SrTiO_{3}. The polarization charges can interact with the nonstoichiometric dislocation cores and thus impact the electrical activities. Our findings can help us to understand the properties of dislocations in perovskite, providing new insights into the design of new devices via defect engineering such as bicrystal fabrication and thin film growth.

Continuously Tuning Epitaxial Strains by Thermal Mismatch

Strain engineering of thin films is a conventionally employed approach to enhance material properties and to energetically prefer ground states that would otherwise not be attainable. Controlling strain states in perovskite oxide thin films is usually accomplished through coherent epitaxy by using lattice-mismatched substrates with similar crystal structures. However, the limited choice of suitable oxide substrates makes certain strain states experimentally inaccessible and a continuous tuning impossible. Here, we report a strategy to continuously tune epitaxial strains in perovskite films grown on Si(001) by utilizing the large difference of thermal expansion coefficients between the film and the substrate. By establishing an adsorption-controlled growth window for SrTiO₃ thin films on Si using hybrid molecular beam epitaxy, the magnitude of strain can be solely attributed to thermal expansion mismatch, which only depends on the difference between growth and room temperature. Second-harmonic generation measurements revealed that structure properties of SrTiO₃ films could be tuned by this method using films with different strain states. Our work provides a strategy to generate continuous strain states in oxide/semiconductor pseudomorphic buffer structures that could help achieve desired material functionalities.

Physics of SrTiO3-based heterostructures and nanostructures: a review

This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

Strain coupling of oxygen non-stoichiometry in perovskite thin films

The effects of strain and oxygen vacancies on perovskite thin films have been studied in great detail over the past decades and have been treated separately from each other. While epitaxial strain has been realized as a tuning knob to tailor the functional properties of correlated oxides, oxygen vacancies are usually regarded as undesirable and detrimental. In transition metal oxides, oxygen defects strongly modify the properties and functionalities via changes in oxidation states of the transition metals. However, such coupling is not well understood in epitaxial films, but rather deemed as cumbersome or experimental artifact. Only recently it has been recognized that lattice strain and oxygen non-stoichiometry are strongly correlated in a vast number of perovskite systems and that this coupling can be beneficial for information and energy technologies. Recent experimental and theoretical studies have focused on understanding the correlated phenomena between strain and oxygen vacancies for a wide range of perovskite systems. These correlations not only include the direct relationship between elastic strain and the formation energy of oxygen vacancies, but also comprise highly complex interactions such as strain-induced phase transitions due to oxygen vacancy ordering. Therefore, we aim in this review to give a comprehensive overview on the coupling between strain and oxygen vacancies in perovskite oxides and point out the potential applications of the emergent functionalities strongly coupled to oxygen vacancies.

Angle-resolved photoemission spectroscopy studies of metallic surface and interface states of oxide insulators

Over the last decade, conducting states embedded in insulating transition metal oxides (TMOs) have served as gateways to discovering and probing surprising phenomena that can emerge in complex oxides, while also opening opportunities for engineering advanced devices. These states are commonly realized at thin film interfaces, such as the well-known case of LaAlO3 (LAO) grown on SrTiO3 (STO). In recent years, the use of angle-resolved photoemission spectroscopy (ARPES) to investigate the k-space electronic structure of such materials led to the discovery that metallic states can also be formed on the bare surfaces of certain TMOs. In this topical review, we report on recent studies of low-dimensional metallic states confined at insulating oxide surfaces and interfaces as seen from the perspective of ARPES, which provides a direct view of the occupied band structure. While offering a fairly broad survey of progress in the field, we draw particular attention to STO, whose surface is so far the best-studied, and whose electronic structure is probably of the most immediate interest, given the ubiquitous use of STO substrates as the basis for conducting oxide interfaces. The ARPES studies provide crucial insights into the electronic band structure, orbital character, dimensionality/confinement, spin structure, and collective excitations in STO surfaces and related oxide surface/interface systems. The obtained knowledge increases our understanding of these complex materials and gives new perspectives on how to manipulate their properties.

Polar phase transitions in heteroepitaxial stabilized La0.5Y0.5AlO3 thin films

We report on the fabrication of epitaxial La_0.5Y_0.5AlO₃ ultrathin films on (001) LaAlO₃ substrates. Structural characterizations by scanning transmission electron microscopy and x-ray diffraction confirm the high quality of the film with a ^- b ⁺ c ^- AlO₆ octahedral tilt pattern. Unlike either of the nonpolar parent compound, LaAlO₃ and YAlO₃, second harmonic generation measurements on the thin films suggest a nonpolar-polar phase transition at T _c near 500 K, and a polar-polar phase transition at T _a near 160 K. By fitting the angular dependence of the second harmonic intensities, we further propose that the two polar structures can be assigned to the Pmc2 ₁ and Pmn2 ₁ space group, while the high temperature nonpolar structure belongs to the Pbnm space group.

An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, the integration of gate materials that enable nonvolatile or hysteretic functionality in field-effect transistors could lead to device technologies that consume less power or allow for novel modalities in computing. Here we present electrical characterization of ultrathin single crystalline SrZr_xTi_1-xO₃ (x = 0.7) films epitaxially grown on a high mobility semiconductor, Ge. Epitaxial films of SrZr_xTi_1-xO₃ exhibit relaxor behavior, characterized by a hysteretic polarization that can modulate the surface potential of Ge. We find that gate layers as thin as 5 nm corresponding to an equivalent-oxide thickness of just 1.0 nm exhibit a ∼2 V hysteretic window in the capacitance-voltage characteristics. The development of hysteretic metal-oxide-semiconductor capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.

Room-temperature soft mode and ferroelectric like polarization in SrTiO3 ultrathin films: Infrared and ab initio study

Due to the remarkable possibilities of epitaxially growing strontium titanate (SrTiO₃ or STO) on silicon, this oxide is widely used as a buffer layer for integrating other perovskite oxides which allows for the development of various functional electronic devices on silicon. Moreover, STO is known to be an incipient ferroelectric in bulk but may become ferroelectric when in the form of strained ultrathin films. Given the importance of the potential applications for electronics if this property is demonstrated, we performed a spectroscopic study of STO on Si(001) templates coupling experimental and ab initio investigations. We selected six samples of ultrathin films: three strained samples (of thickness 4, 9 and 48 nm) and three relaxed samples (of equivalent thickness). Their infrared spectra show that both the mechanical stress and the thickness play major roles: higher energy modes evolve as soft modes in thinner strained films. In order to support these observations, the dynamical ab initio calculations allowed deriving the conditions for STO films to become ferroelectric at room temperature as shown by the development of a soft mode and the divergence of the in-plane dielectric constant.

Dynamic defect correlations dominate activated electronic transport in SrTiO3

Strontium titanate (SrTiO3, STO) is a critically important material for the study of emergent electronic phases in complex oxides, as well as for the development of applications based on their heterostructures. Despite the large body of knowledge on STO, there are still many uncertainties regarding the role of defects in the properties of STO, including their influence on ferroelectricity in bulk STO and ferromagnetism in STO-based heterostructures. We present a detailed analysis of the decay of persistent photoconductivity in STO single crystals with defect concentrations that are relatively low but significantly affect their electronic properties. The results show that photo-activated electron transport cannot be described by a superposition of the properties due to independent point defects as current models suggest but is, instead, governed by defect complexes that interact through dynamic correlations. These results emphasize the importance of defect correlations for activated electronic transport properties of semiconducting and insulating perovskite oxides.

Controlling the Electronic Structures of Perovskite Oxynitrides and their Solid Solutions for Photocatalysis

Band-gap engineering of oxide materials is of great interest for optoelectronics, photovoltaics, and photocatalysis applications. In this study, electronic structures of perovskite oxynitrides, LaTiO2 N and SrNbO2 N, and solid solutions, (SrTiO3 )1-x (LaTiO2 N)x and (SrTiO3 )1-x (SrNbO2 N)x , are investigated using hybrid density functional calculations. Band gaps of LaTiO2 N and SrNbO2 N are much smaller than that of SrTiO3 owing to the formation of a N 2p band, which is higher in energy than the O 2p band. The valence- and conduction-band offsets of SrTiO3 /LaTiO2 N and SrTiO3 /SrNbO2 N are computed, and the adequacy for H2 evolution is analyzed by comparing the positions of the band edges with respect to the standard hydrogen electrode (SHE). The band gap of (SrTiO3 )1-x (LaTiO2 N)x and (SrTiO3 )1-x (SrNbO2 N)x solid solutions are also discussed.