Scanning tunneling microscopy chemical signature of point defects on the MoS2(0001) surface

Coexisting Phases in Transition Metal Dichalcogenides: Overview, Synthesis, Applications, and Prospects

Over the past decade, significant advancements have been made in phase engineering of two-dimensional transition metal dichalcogenides (TMDCs), thereby allowing controlled synthesis of various phases of TMDCs and facile conversion between them. Recently, there has been emerging interest in TMDC coexisting phases, which contain multiple phases within one nanostructured TMDC. By taking advantage of the merits from the component phases, the coexisting phases offer enhanced performance in many aspects compared with single-phase TMDCs. Herein, this review article thoroughly expounds the latest progress and ongoing efforts on the syntheses, properties, and applications of TMDC coexisting phases. The introduction section overviews the main phases of TMDCs (2H, 3R, 1T, 1T', 1Td), along with the advantages of phase coexistence. The subsequent section focuses on the synthesis methods for coexisting phases of TMDCs, with particular attention to local patterning and random formations. Furthermore, on the basis of the versatile properties of TMDC coexisting phases, their applications in magnetism, valleytronics, field-effect transistors, memristors, and catalysis are discussed. Lastly, a perspective is presented on the future development, challenges, and potential opportunities of TMDC coexisting phases. This review aims to provide insights into the phase engineering of 2D materials for both scientific and engineering communities and contribute to further advancements in this emerging field.

The Magnetic Genome of Two-Dimensional van der Waals Materials

Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

Defects, band bending and ionization rings in MoS2

Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS₂however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a combination of scanning tunnelling microscopy and STS to study embedded sulphur vacancies in bulk MoS₂crystals. We observe spectroscopic features dispersing in real space and in energy, which we interpret as tip position- and bias-dependent ionization of the sulphur vacancy donor due to tip induced band bending. The observations indicate that care must be taken in interpreting defect spectra as reflecting in-gap density of states, and may explain discrepancies in the literature.

Wet Chemical Method for Black Phosphorus Thinning and Passivation

Layered black phosphorus (BP) has been expected to be a promising material for future electronic and optoelectronic applications since its discovery. However, the difficulty in mass fabricating layered air-stable BP severely obstructs its potential industry applications. Here, we report a new BP chemical modification method to implement all-solution-based mass production of layered air-stable BP. This method uses the combination of two electron-deficient reagents 2,2,6,6-tetramethylpiperidinyl- N-oxyl (TEMPO) and triphenylcarbenium tetrafluorobor ([Ph₃C]BF₄) to accomplish thinning and/or passivation of BP in organic solvent. The field-effect transistor and photodetection devices constructed from the chemically modified BP flakes exhibit enhanced performances with environmental stability up to 4 months. A proof-of-concept BP thin-film transistor fabricated through the all-solution-based exfoliation and modification displays an air-stable and a typical p-type transistor behavior. This all-solution-based method improves the prospects of BP for industry applications.

Engineering Point-Defect States in Monolayer WSe2

Defect engineering is a key approach for tailoring the properties of the emerging two-dimensional semiconductors. Here, we report an atomic engineering of the W vacancy in monolayer WSe₂ by single potassium atom decoration. The K decoration alters the energy states and reshapes the wave function such that previously hidden midgap states become visible with well-resolved multiplets in scanning tunneling spectroscopy. Their energy levels are in good agreement with first-principle calculations. More interestingly, the calculations show that an unpaired electron donated by the K atom can lead to a local magnetic moment, exhibiting an on-off switching by the odd-even number of electron filling. Experimentally the Fermi level is pinned above all defect states due to the graphite substrate, corresponding to an off state. The close agreement between theory and experiment in the off state, on the other hand, suggests the possibility of gate-programmable magnetic moments at the defects.

Pulsed laser deposition of single-layer MoS2 on Au(111): from nanosized crystals to large-area films

Molybdenum disulphide (MoS₂) is a promising material for heterogeneous catalysis and novel two-dimensional (2D) optoelectronic devices. In this work, we synthesized single-layer (SL) MoS₂ structures on Au(111) by pulsed laser deposition (PLD) under ultra-high vacuum (UHV) conditions. By controlling the PLD process, we were able to tune the sample morphology from low-coverage SL nanocrystals to large-area SL films uniformly wetting the whole substrate surface. We investigated the obtained MoS₂ structures at the nanometer and atomic scales by means of in situ scanning tunneling microscopy/spectroscopy (STM/STS) measurements, to study the interaction between SL MoS₂ and Au(111)-which for example influences MoS₂ lattice orientation-the structure of point defects and the formation of in-plane MoS₂/Au heterojunctions. Raman spectroscopy, performed ex situ on large-area SL MoS₂, revealed significant modifications of the in-plane E12g and out-of-plane A_1g vibrational modes, possibly related to strain and doping effects. Charge transfer between SL MoS₂ and Au is also likely responsible for the total suppression of excitonic emission, observed by photoluminescence (PL) spectroscopy.

Elimination of S Vacancy as the Cause for the n-Type Behavior of MoS2 from the First-Principles Perspective

Molybdenum disulfide (2H-MoS₂) based low-dimensional nanostructure materials have great potential for applications in electronic and optoelectronic devices. However, some of the properties such as the origin of the native n-type electrical conductivity (EC) observed in these materials still remain elusive. Here, the defect properties in the 2H-MoS₂ bulk system are systematically investigated by first-principles calculation to address these issues. We find that the S vacancy V_S with low formation energy cannot be the origin of n-type EC owing to its deep defect levels within the valence band region. All other donor defects such as antisite Mo_S or Mo interstitial Mo_I also have deep levels that can trap electrons leading to depressed EC. S_Mo and S_I could be the origin of the p-type EC in 2H-MoS₂, but the concentrations are expected to be rather low due to their high formation energies and can only be enhanced under S-rich/Mo-poor conditions. These results provide the underlying insights on the defect properties 2H-MoS₂ and explain well the experimental observations.

Two-dimensional electronic transport and surface electron accumulation in MoS2

Because the surface-to-volume ratio of quasi-two-dimensional materials is extremely high, understanding their surface characteristics is crucial for practically controlling their intrinsic properties and fabricating p-type and n-type layered semiconductors. Van der Waals crystals are expected to have an inert surface because of the absence of dangling bonds. However, here we show that the surface of high-quality synthesized molybdenum disulfide (MoS₂) is a major n-doping source. The surface electron concentration of MoS₂ is nearly four orders of magnitude higher than that of its inner bulk. Substantial thickness-dependent conductivity in MoS₂ nanoflakes was observed. The transfer length method suggested the current transport in MoS₂ following a two-dimensional behavior rather than the conventional three-dimensional mode. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements confirmed the presence of surface electron accumulation in this layered material. Notably, the in situ-cleaved surface exhibited a nearly intrinsic state without electron accumulation.

In absence of dangling bonds, van der Waals layered crystals are expected to have inert surfaces. In contrast, here the authors show presence of surface electron accumulation in MoS₂, with a surface electron concentration nearly four orders of magnitude higher than that of MoS₂ inner bulk.

Interaction between H2O, N2, CO, NO, NO2 and N2O molecules and a defective WSe2 monolayer

In this study, the interaction between gas molecules, including H₂O, N₂, CO, NO, NO₂ and N₂O, and a WSe₂ monolayer containing an Se vacancy (denoted as V_Se) has been theoretically studied. Theoretical results show that H₂O and N₂ molecules are highly prone to be physisorbed on the V_Se surface. The presence of the Se vacancy can significantly enhance the sensing ability of the WSe₂ monolayer toward H₂O and N₂ molecules. In contrast, CO and NO molecules highly prefer to be molecularly chemisorbed on the V_Se surface with the non-oxygen atom occupying the Se vacancy site. Furthermore, the exposed O atoms of the molecularly chemisorbed CO or NO can react with additional CO or NO molecules, to produce C-doped or N-doped WSe₂ monolayers. The calculated energies suggest that the filling of the CO or NO molecule and the removal of the exposed O atom are both energetically and dynamically favorable. Electronic structure calculations show that the WSe₂ monolayers are p-doped by the CO and NO molecules, as well as the C and N atoms. However, only the NO molecule and N atom doped WSe₂ monolayers exhibit significantly improved electronic structures compared with V_Se. The NO₂ and N₂O molecules will dissociate directly to form an O-doped WSe₂ monolayer, for which the defect levels due to the Se vacancy can be completely removed. The calculated energies suggest that although the dissociation processes for NO₂ and N₂O molecules are highly exothermic, the N₂O dissociation may need to operate at an elevated temperature compared with room temperature, due to its large energy barrier of ∼1 eV.

Tunnelling characteristics of Stone-Wales defects in monolayers of Sn and group-V elements

Topological defects in ultrathin layers are often formed during synthesis and processing, thereby strongly influencing the electronic properties of layered systems. For the monolayers of Sn and group-V elements, we report the results based on density functional theory determining the role of Stone-Wales (SW) defects in modifying their electronic properties. The calculated results find the electronic properties of the Sn monolayer to be strongly dependent on the concentration of SW defects, e.g. defective stanene has nearly zero band gap (≈0.03 eV) for the defect concentration of 2.2  ×  10¹³ cm^-2 which opens up to 0.2 eV for the defect concentration of 3.7  ×  10¹³ cm^-2. In contrast, SW defects appear to induce conduction states in the semiconducting monolayers of group-V elements. These conduction states act as channels for electron tunnelling, and the calculated tunnelling characteristics show the highest differential conductance for the negative bias with the asymmetric current-voltage characteristics. On the other hand, the highest differential conductance was found for the positive bias in stanene. Simulated STM topographical images of stanene and group-V monolayers show distinctly different features in terms of their cross-sectional views and distance-height profiles. These distinctive features can serve as fingerprints to identify the topological defects in experiments for the monolayers of group-IV and group-V elements.

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures

The existence of defects in 2D semiconductors has been predicted to generate unique physical properties and markedly influence their electronic and optoelectronic properties. In this work, it is found that the monolayer MoS₂ prepared by chemical vapor deposition is nearly defect-free after annealing under ultrahigh vacuum conditions at ≈400 K, as evidenced by scanning tunneling microscopy observations. However, after thermal annealing process at ≈900 K, the existence of dominant single sulfur vacancies and relatively rare vacancy chains (2S, 3S, and 4S) is convinced in monolayer MoS₂ as-grown on Au foils. Of particular significance is the revelation that the versatile vacancies can modulate the band structure of the monolayer MoS₂ , leading to a decrease of the bandgap and an obvious n-doping effect. These results are confirmed by scanning tunneling spectroscopy data as well as first-principles theoretical simulations of the related morphologies and the electronic properties of the various defect types. Briefly, this work should pave a novel route for defect engineering and hence the electronic property modulation of three-atom-thin 2D layered semiconductors.

First-principles study on structural, thermal, mechanical and dynamic stability of T'-MoS2

Using first-principles density functional theory calculations, we investigate the structure, stability, optical modes and electronic band gap of a distorted tetragonal MoS₂ monolayer (T'-MoS₂). Our simulated scanning tunnel microscopy (STM) images of T'-MoS₂ are dramatically similar to those STM images which were identified as K _x (H₂O) _y MoS₂ from a previous experimental study. This similarity suggests that T'-MoS₂ might have already been experimentally observed, but due to being unexpected was misidentified. Furthermore, we verify the stability of T'-MoS₂ from the thermal, mechanical and dynamic aspects, by ab initio molecular dynamics simulation, elastic constants evaluation and phonon band structure calculation based on density functional perturbation theory, respectively. In addition, we calculate the eigenfrequencies and eigenvectors of the optical modes of T'-MoS₂ at [Formula: see text] point and distinguish their Raman and infrared activity by pointing out their irreducible representations using group theory. At the same time, we compare the Raman modes of T'-MoS₂ with those of H-MoS₂ and T-MoS₂. Our results provide useful guidance for further experimental identification and characterization of T'-MoS₂.

Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2

Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesis technique. Using high resolution scanning tunneling microscopy and spectroscopy (STM/STS), photoemission electron microscopy/spectroscopy (PEEM) and μ-ARPES we investigate the electronic properties of MoS2 as a function of the number of layers at the nanoscale and show in-depth how the band gap is affected by a shift of the valence band edge as a function of the layer number. Green's function based electronic structure calculations were carried out in order to shed light on the mechanism underlying the observed bandgap reduction with increasing thickness, and the role of the interfacial Sulphur atoms is clarified. Our study, which gives new insight into the variation of electronic properties of MoS2 films with thickness bears directly on junction properties of MoS2, and thus impacts electronics application of MoS2.

Ferromagnetism in Transitional Metal-Doped MoS2 Monolayer

Manipulating electronic and magnetic properties of two-dimensional (2D) transitional-metal dichalcogenides (TMDs) MX2 by doping has raised a lot of attention recently. By performing the first-principles calculations, we have investigated the structural, electronic, and magnetic properties of transitional metal (TM)-doped MoS2 at low and high impurity concentrations. Our calculation result indicates that the five elements of V-, Mn-, Fe-, Co-, and Cu-doped monolayer MoS2 at low impurity concentration all give rise to the good diluted magnetic semiconductors. By studying various configurations with different TM-TM separations, we found that the impurity atoms prefer to stay together in the nearest neighboring (NN) configuration, in which the doped TM atoms are FM coupling except for Fe doping at 12 % concentration. For V, Mn, and Fe doping, the total magnetic moment is smaller than the local magnetic moment of the dopants because the induced spins on the nearby host atoms are antiparallel to that of the doped atoms. In contrast, Co and Cu doping both give the higher total magnetic moment. Especially, Cu doping induces strong ferromagnetism relative to the local spins. However, the atomic structures of Co- and Cu-doped MoS2 deviate from the original prismatic configuration, and the magnetic moments of the doped systems decrease at 12 % impurity concentration although both elements give higher magnetic moments at 8 % impurity concentration. Our calculations indicate that V and Mn are promising candidates for engineering and manipulating the magnetism of the 2D TMDs.

Indirect Bandgap Puddles in Monolayer MoS2 by Substrate-Induced Local Strain

An unusually large bandgap modulation of 1.23-2.65 eV in monolayer MoS₂ on a SiO₂ /Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct-to-indirect bandgap transition. Approximately 80% of the surface area reveals an indirect bandgap, which is confirmed further by the degraded photoluminescence compared to that from suspended MoS₂ .

Greatly Enhanced Optical Absorption of a Defective MoS2 Monolayer through Oxygen Passivation

Structural defects in the molybdenum disulfide (MoS2) monolayer are widely reported and greatly degrade the transport and photoluminescence. However, how they influence the optical absorption properties remains unclear. In this work, by employing many-body perturbation theory calculations, we investigate the influence of sulfur vacancies (SVs), the main type of intrinsic defects in the MoS2 monolayer, on the optical absorption and exciton effect. Our calculations reveal that the presence of SVs creates localized midgap states in the bandgap, which results in a dramatic red-shift of the absorption peak and stronger absorbance in the visible light and near-infrared region. Nevertheless, the SVs can be finely repaired by oxygen passivation and are beneficial to the formation of the stable localized excitons, which greatly enhance the optical absorption in the spectral range. The defect-mediated/-engineered absorption mechanism is well understood, which offers insightful guides for improving the performance of two-dimensional dichalcogenide-based optoelectronic devices.

Theoretical analysis of the combined effects of sulfur vacancies and analyte adsorption on the electronic properties of single-layer MoS2

We report a first-principles theoretical investigation on the electronic structure and electron transport of defective single-layer (SL) MoS2, as well as of corresponding structures adsorbed with benzyl viologen (BV), which was shown to provide improved performance of a field effect transistor. O2 adsorption was included to gain an understanding of the response upon air-exposure. Following analysis of the structure and stability of sulfur single vacancy and line defects in SL MoS2, we investigated the local transport at the adsorbed sites via a transport model that mimics a scanning tunneling spectroscopy experiment. Distinct current-voltage characteristics were indicated for adsorbed oxygen species at a sulfur vacancy. The electronic structures of defective MoS2 indicated the emergence of impurity states in the bandgap due to sulfur defects and oxygen adsorption. Electron transport calculations for the MoS2 surface with an extended defect in a device setting demonstrated that physisorption of BV enhances the output current, while facile chemisorption by O2 upon air-exposure causes degradation of electron transport.

Electronic and magnetic properties of Co doped MoS2 monolayer

First principle calculations are employed to calculate the electronic and magnetic properties of Co doped MoS₂ by considering a variety of defects including all the possible defect complexes. The results indicate that pristine MoS₂ is nonmagnetic. The materials with the existence of S vacancy or Mo vacancy alone are non-magnetic either. Further calculation demonstrates that Co substitution at Mo site leads to spin polarized state. Two substitutional Co_Mo defects tend to cluster and result in the non-magnetic behaviour. However, the existence of Mo vacancies leads to uniform distribution of Co dopants and it is energy favourable with ferromagnetic coupling, resulting in an intrinsic diluted magnetic semiconductor.

Surface Recombination Limited Lifetimes of Photoexcited Carriers in Few-Layer Transition Metal Dichalcogenide MoS₂

We present results on photoexcited carrier lifetimes in few-layer transition metal dichalcogenide MoS2 using nondegenerate ultrafast optical pump-probe technique. Our results show a sharp increase of the carrier lifetimes with the number of layers in the sample. Carrier lifetimes increase from few tens of picoseconds in monolayer samples to more than a nanosecond in 10-layer samples. The inverse carrier lifetime was found to scale according to the probability of the carriers being present at the surface layers, as given by the carrier wave function in few layer samples, which can be treated as quantum wells. The carrier lifetimes were found to be largely independent of the temperature, and the inverse carrier lifetimes scaled linearly with the photoexcited carrier density. These observations are consistent with defect-assisted carrier recombination, in which the capture of electrons and holes by defects occurs via Auger scatterings. Our results suggest that carrier lifetimes in few-layer samples are surface recombination limited due to the much larger defect densities at surface layers compared with the inner layers.

Ultrafast response of monolayer molybdenum disulfide photodetectors

The strong light emission and absorption exhibited by single atomic layer transitional metal dichalcogenides in the visible to near-infrared wavelength range make them attractive for optoelectronic applications. In this work, using two-pulse photovoltage correlation technique, we show that monolayer molybdenum disulfide photodetector can have intrinsic response times as short as 3 ps implying photodetection bandwidths as wide as 300 GHz. The fast photodetector response is a result of the short electron–hole and exciton lifetimes in this material. Recombination of photoexcited carriers in most two-dimensional metal dichalcogenides is dominated by nonradiative processes, most notable among which is Auger scattering. The fast response time, and the ease of fabrication of these devices, make them interesting for low-cost ultrafast optical communication links.

Two-dimensional transition-metal dichalcogenides are useful for optoelectronic applications, but the ultimate limit on the speed of photodetector operation is unknown. Here, the authors show that the optical response time of monolayer molybdenum disulfide can be as short as three picoseconds.

An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2

Two-dimensional (2D) molybdenum disulfide (MoS2) has attracted significant attention recently due to its direct bandgap semiconducting characteristics. Experimental studies on monolayer MoS2 show that S vacancy concentration varies greatly; while recent theoretical studies show that the formation energy of S vacancy is high and thus its concentration should be low. We perform density functional theory calculations to study the structures and energetics of vacancy and interstitial in both grain boundary (GB) and grain interior (GI) in monolayer MoS2 and uncover an anomalous formation pathway for dislocation-double S vacancy (V2S) complexes in MoS2. In this pathway, a (5|7) defect in an S-polar GB energetically favorably converts to a (4|6) defect, which possesses a duality: dislocation and double S vacancy. Its dislocation character allows it to glide into GI through thermal activation at high temperatures, bringing the double vacancy with it. Our findings here not only explain why VS is predominant in exfoliated 2D MoS2 and V2S is predominant in chemical vapor deposition (CVD)-grown 2D MoS2 but also reproduce GB patterns in CVD-grown MoS2. The new pathway for sulfur vacancy formation revealed here provides important insights and guidelines for controlling the quality of monolayer MoS2.

Surface Defects on Natural MoS2

Transition metal dichalcogenides (TMDs) are being considered for a variety of electronic and optoelectronic devices such as beyond complementary metal-oxide-semiconductor (CMOS) switches, light-emitting diodes, solar cells, as well as sensors, among others. Molybdenum disulfide (MoS2) is the most studied of the TMDs in part because of its availability in the natural or geological form. The performance of most devices is strongly affected by the intrinsic defects in geological MoS2. Indeed, most sources of current transition metal dichalcogenides have defects, including many impurities. The variability in the electrical properties of MoS2 across the surface of the same crystal has been shown to be correlated with local variations in stoichiometry as well as metallic-like and structural defects. The presence of impurities has also been suggested to play a role in determining the Fermi level in MoS2. The main focus of this work is to highlight a number of intrinsic defects detected on natural, exfoliated MoS2 crystals from two different sources that have been often used in previous reports for device fabrication. We employed room temperature scanning tunneling microscopy (STM) and spectroscopy (STS), inductively coupled plasma mass spectrometry (ICPMS), as well as X-ray photoelectron spectroscopy (XPS) to study the pristine surface of MoS2(0001) immediately after exfoliation. ICPMS used to measure the concentration of impurity elements can in part explain the local contrast behavior observed in STM images. This work highlights that the high concentration of surface defects and impurity atoms may explain the variability observed in the electrical and physical characteristics of MoS2.

Atomic healing of defects in transition metal dichalcogenides

As-grown transition metal dichalcogenides are usually chalcogen deficient and therefore contain a high density of chalcogen vacancies, deep electron traps which can act as charged scattering centers, reducing the electron mobility. However, we show that chalcogen vacancies can be effectively passivated by oxygen, healing the electronic structure of the material. We proposed that this can be achieved by means of surface laser modification and demonstrate the efficiency of this processing technique, which can enhance the conductivity of monolayer WSe2 by ∼400 times and its photoconductivity by ∼150 times.

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40 ± 0.05 eV for single-layer, 2.10 ± 0.05 eV for bilayer and 1.75 ± 0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85 ± 0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.

Ultrafast dynamics of defect-assisted electron-hole recombination in monolayer MoS2

In this Letter, we present nondegenerate ultrafast optical pump-probe studies of the carrier recombination dynamics in MoS2 monolayers. By tuning the probe to wavelengths much longer than the exciton line, we make the probe transmission sensitive to the total population of photoexcited electrons and holes. Our measurement reveals two distinct time scales over which the photoexcited electrons and holes recombine; a fast time scale that lasts ∼ 2 ps and a slow time scale that lasts longer than ∼ 100 ps. The temperature and the pump fluence dependence of the observed carrier dynamics are consistent with defect-assisted recombination as being the dominant mechanism for electron-hole recombination in which the electrons and holes are captured by defects via Auger processes. Strong Coulomb interactions in two-dimensional atomic materials, together with strong electron and hole correlations in two-dimensional metal dichalcogenides, make Auger processes particularly effective for carrier capture by defects. We present a model for carrier recombination dynamics that quantitatively explains all features of our data for different temperatures and pump fluences. The theoretical estimates for the rate constants for Auger carrier capture are in good agreement with the experimentally determined values. Our results underscore the important role played by Auger processes in two-dimensional atomic materials.

Atomistic insight into the oxidation of monolayer transition metal dichalcogenides: from structures to electronic properties

Monolayer transition metal dichalcogenides (TMDs) stand out in two-dimensional (2D) materials due to their potential applications in future microelectronic and optoelectronic devices.

Room-temperature ferromagnetism in Co doped MoS2 sheets

We synthesized MoS₂ nanosheets with varying Co dopant concentrations; the result implied that the values of the magnetic moment decreased with the increase of the Co dopant concentrations.

Growth of large-scale and thickness-modulated MoS₂ nanosheets

Two-dimensional MoS2 is a promising material for next-generation electronic and optoelectronic devices due to its unique electrical and optical properties including the band gap modulation with film thickness. Although MoS2 has shown excellent properties, wafer-scale production with layer control from single to few layers has yet to be demonstrated. The present study explored the large-scale and thickness-modulated growth of atomically thin MoS2 on Si/SiO2 substrates using a two-step sputtering-CVD method. Our process exhibited wafer-scale fabrication and successful thickness modulation of MoS2 layers from monolayer (0.72 nm) to multilayer (12.69 nm) with high uniformity. Electrical measurements on MoS2 field effect transistors (FETs) revealed a p-type semiconductor behavior with much higher field effect mobility and current on/off ratio as compared to previously reported CVD grown MoS2-FETs and amorphous silicon (a-Si) thin film transistors. Our results show that sputter-CVD is a viable method to synthesize large-area, high-quality, and layer-controlled MoS2 that can be adapted in conventional Si-based microfabrication technology and future flexible, high-temperature, and radiation hard electronics/optoelectronics.

Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers

Monolayer MoS2 is a direct band gap semiconductor which has been recently investigated for low-power field effect transistors. The initial studies have shown promising performance, including a high on/off current ratio and carrier mobility with a high-κ gate dielectric. However, the performance of these devices strongly depends on the crystalline quality and defect morphology of the monolayers. In order to obtain a detailed understanding of the MoS2 electronic device properties, we examine possible defect structures and their impact on the MoS2 monolayer electronic properties, using density functional theory in combination with scanning tunneling microscopy to identify the nature of the most likely defects. Quantitative understanding based on a detailed knowledge of the atomic and electronic structures will facilitate the search of suitable defect passivation techniques. Our results show that S adatoms are the most energetically favorable type of defect and that S vacancies are energetically more favorable than Mo vacancies. This approach may be extended to other transition-metal dichalcogenides (TMDs), thus providing useful insights to optimize TMD-based electronic devices.

Bandgap, mid-gap states, and gating effects in MoS2

The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a semiconductor in the TMD family, with its remarkable thermal and chemical stability and high mobility, has emerged as a promising candidate for postsilicon applications such as switching, photonics, and flexible electronics. Because these rely on controlling the position of the Fermi energy (EF), it is crucial to understand its dependence on doping and gating. To elucidate these questions we carried out gated scanning tunneling microscopy (STM) and spectroscopy (STS) measurements and compared them with transport measurements in a field effect transistor (FET) device configuration. This made it possible to measure the bandgap and the position of EF in MoS2 and to track its evolution with gate voltage. For bulk samples, the measured bandgap (∼ 1.3 eV) is comparable to the value obtained by photoluminescence, and the position of EF (∼ 0.35 eV) below the conduction band, is consistent with N-doping reported in this material. We show that the N-doping in bulk samples can be attributed to S vacancies. In contrast, the significantly higher N-doping observed in thin MoS2 films deposited on SiO2 is dominated by charge traps at the sample-substrate interface.

Unexpected strong magnetism of Cu doped single-layer MoS2 and its origin

Nonmagnetic Cu substitutes for Mo in a single-layer MoS₂ and induces an unexpected strong magnetism.

Magnetic molybdenum disulfide nanosheet films

Bulk molybdenum disulfide is known to be a nonmagnetic material. We have synthesized edge-oriented MoS2 nanosheet-like films that exhibit weak magnetism ( approximately 1-2 emu/g) and 2.5% magnetoresistance effects with a Curie temperature of 685 K. The magnetization is related to the presence of edge spins on the prismatic edges of the nanosheets. Spin-polarized calculations were performed on triangular-shaped cluster models in order to provide insight into the origin of magnetism on the edges as well as the size-property correlation in these MoS2 nanosheets. Our results imply that nanostructured films with a high density of edge spins can give rise to magnetism even though the bulk material is nonmagnetic.