Manipulating 2D Materials through Strain Engineering

This review explores the growing interest in 2D layered materials, such as graphene, h-BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics.

Enhancing Carrier Mobility in Monolayer MoS2 Transistors with Process-Induced Strain

Two-dimensional electronic materials are a promising candidate for beyond-silicon electronics due to their favorable size scaling of electronic performance. However, a major challenge is the heterogeneous integration of 2D materials with CMOS processes while maintaining their excellent properties. In particular, there is a knowledge gap in how thin film deposition and processes interact with 2D materials to alter their strain and doping, both of which have a drastic impact on device properties. In this study, we demonstrate how to utilize process-induced strain, a common technique extensively applied in the semiconductor industry, to enhance the carrier mobility in 2D material transistors. We systematically varied the tensile strain in monolayer MoS2 transistors by iteratively depositing thin layers of high-stress MgOx stressor. At each thickness, we combined Raman spectroscopy and transport measurements to unravel and correlate the changes in strain and doping within each transistor with their performance. The transistors displayed uniform strain distributions across their channels for tensile strains of up to 0.48 ± 0.05%, at 150 nm of stressor thickness. At higher thicknesses, mechanical instability occurred, leading to nonuniform strains. The transport characteristics systematically varied with strain, with enhancement in electron mobility at a rate of 130 ± 40% per % strain and enhancement of the channel saturation current density of 52 ± 20%. This work showcases how established CMOS technologies can be leveraged to tailor the transport in 2D transistors, accelerating the integration of 2D electronics into a future computing infrastructure.

Optically Triggered Emergent Mesostructures in Monolayer WS2

The ultrahigh surface area of two-dimensional materials can drive multimodal coupling between optical, electrical, and mechanical properties that leads to emergent dynamical responses not possible in three-dimensional systems. We observed that optical excitation of the WS2 monolayer above the exciton energy creates symmetrically patterned mechanical protrusions which can be controlled by laser intensity and wavelength. This observed photostrictive behavior is attributed to lattice expansion due to the formation of polarons, which are charge carriers dressed by lattice vibrations. Scanning Kelvin probe force microscopy measurements and density functional theory calculations reveal unconventional charge transport properties such as the spatially and optical intensity-dependent conversion in the WS2 monolayer from apparent n- to p-type and the subsequent formation of effective p-n junctions at the boundaries between regions with different defect densities. The strong opto-electrical-mechanical coupling in the WS2 monolayer reveals previously unexplored properties, which can lead to new applications in optically driven ultrathin microactuators.

Self-Assembly of Organic Semiconductors on Strained Graphene under Strain-Induced Pseudo-Electric Fields

Graphene is used as a growth template for van der Waals epitaxy of organic semiconductor (OSC) thin films. During the synthesis and transfer of chemical-vapor-deposited graphene on a target substrate, local inhomogeneities in the graphene-in particular, a nonuniform strain field in the graphene template-can easily form, causing poor morphology and crystallinity of the OSC thin films. Moreover, a strain field in graphene introduces a pseudo-electric field in the graphene. Here, the study investigates how the strain and strain-induced pseudo-electric field of a graphene template affect the self-assembly of π-conjugated organic molecules on it. Periodically strained graphene templates are fabricated by transferring graphene onto an array of nanospheres and then analyzed the growth and nucleation behavior of C60 thin films on the strained graphene templates. Both experiments and a numerical simulation demonstrated that strained graphene reduced the desorption energy between the graphene and the C60 molecules and thereby suppressed both nucleation and growth of the C60. A mechanism is proposed in which the strain-induced pseudo-electric field in graphene modulates the binding energy of organic molecules on the graphene.

Mechanical Mapping of Nanoblisters Confined by Two-Dimensional Materials Reveals Complex Ridge Patterns

Understanding the mechanics of blisters confined by two-dimensional (2D) materials is of great importance for either fundamental studies or for their practical applications. In this work, we investigate the mechanical properties of nanoscale 2D material blisters using contact-resonance atomic force microscopy (CR-AFM). From the measurement results at the blister centers, the blisters' internal pressures are characterized, which are shown to be inversely proportional to the blisters' sizes. Our measurements agree considerably well with values predicted by theoretical mechanic analyses of the blisters. In addition, high-resolution mechanical mapping with CR-AFM reveals fine, complex ridge patterns of the blisters' confining membranes, which can hardly be distinguished from their topographies. The pattern complexity of a blister system is shown to increase with an increase in its bendability.

One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories

Dimensionality of materials is closely related to their physical properties. For two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS2), converting them from 2D nanosheets to one-dimensional (1D) nanoscrolls could contribute to remarkable electronic and optoelectronic properties, yet the rolling-up process still lacks sufficient controllability, which limits the development of their device applications. Herein we report a modified solvent evaporation-induced rolling process that halts at intermediate states and achieve MoS2 nanoscrolls with high yield and decent axial uniformity. The accordingly fabricated nanoscroll memories exhibit an on/off ratio of ∼104 and a retention time exceeding 103 s and can realize multilevel storage with pulsed gate voltages. Such open-end, high-curvature, and hollow 1D nanostructures provide new possibilities to manipulate the hysteresis windows and, consequently, the charge storage characteristics of nanoscale field-effect transistors, thereby holding great promise for the development of miniaturized memories.

Pseudomagnetic suppression of non-Hermitian skin effect

It has recently been shown that the non-Hermitian skin effect can be suppressed by magnetic fields. In this work, using a two-dimensional tight-binding lattice, we demonstrate that a pseudomagnetic field can also lead to the suppression of the non-Hermitian skin effect. With an increasing pseudomagnetic field, the skin modes are found to be pushed into the bulk, accompanied by the reduction of skin topological area and the restoration of Landau level energies. Our results provide a time-reversal invariant route to localization control and could be useful in various classical wave devices that are able to host the non-Hermitian skin effect but inert to magnetic fields.

Observation of a Photonic Orbital Gauge Field

Gauge field is widely studied in natural and artificial materials. With an effective magnetic field for uncharged particles, many intriguing phenomena are observed in several systems like photonic Floquet topological insulator. However, previous researches about the gauge field mostly focus on limited dimensions such as the Dirac spinor in graphene materials. Here, an orbital gauge field based on photonic triangular lattices is first proposed and experimentally observed. Disclination defects with Frank angle Ω created on such lattices breaks the original lattice symmetry and generates purely geometric gauge field operating on orbital basis functions. Interestingly, it is found that bound states near zero energy with the orbital angular momentum (OAM) l = 2 are intensively confined at the disclination as gradually expanding Ω. Moreover, the introduction of a vector potential field breaks the time-reversal symmetry of the orbital gauge field, experimentally manifested by the chiral transmission of light on helical waveguides. The orbital gauge field further suggests fantastic applications of manipulating the vortex light in photonic integrated devices.

Mechanical Control of Quantum Transport in Graphene

2D materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain can completely turn off the conductance of ballistic graphene or switch on/off the superconducting phase of magic-angle bilayer graphene. This article reports measurements of quantum transport in strained graphene transistors which agree quantitatively with models based on mechanically-induced gauge potentials. A scalar potential is mechanically induced in situ to modify graphene's work function by up to 25 meV. Mechanically generated vector potentials suppress the ballistic conductance of graphene by up to 30% and control its quantum interferences. The data are measured with a custom experimental platform able to precisely tune both the mechanics and electrostatics of suspended graphene transistors at low-temperature over a broad range of strain (up to 2.6%). This work opens many opportunities to harness quantitative strain effects in 2DM quantum transport and technologies.

Surface potential-adjusted surface states in 3D topological photonic crystals

Surface potential in a topological matter could unprecedentedly localize the waves. However, this surface potential is yet to be exploited in topological photonic systems. Here, we demonstrate that photonic surface states can be induced and controlled by the surface potential in a dielectric double gyroid (DG) photonic crystal. The basis translation in a unit cell enables tuning of the surface potential, which in turn regulates the degree of wave localization. The gradual modulation of DG photonic crystals enables the generation of a pseudomagnetic field. Overall, this study shows the interplay between surface potential and pseudomagnetic field regarding the surface states. The physical consequences outlined herein not only widen the scope of surface states in 3D photonic crystals but also highlight the importance of surface treatments in a photonic system.

Three-dimensional flat Landau levels in an inhomogeneous acoustic crystal

When electrons moving in two dimensions (2D) are subjected to a strong uniform magnetic field, they form flat bands called Landau levels (LLs). LLs can also arise from pseudomagnetic fields (PMFs) induced by lattice distortions. In three-dimensional (3D) systems, there has been no experimental demonstration of LLs  as a type of flat band thus far. Here, we report the experimental realization of a flat 3D LL in an acoustic crystal. Starting from a lattice whose bandstructure exhibits a nodal ring, we design an inhomogeneous distortion corresponding to a specific pseudomagnetic vector potential (PVP). This distortion causes the nodal ring states to break up into LLs, including a zeroth LL that is flat along all three directions. These findings suggest the possibility of using nodal ring materials to generate 3D flat bands, allowing access to strong interactions and other attractive physical regimes in 3D.

Observation of continuum Landau modes in non-Hermitian electric circuits

Continuum Landau modes - predicted recently in a non-Hermitian Dirac Hamiltonian under a uniform magnetic field - are continuous bound states with no counterparts in Hermitian systems. However, they have still not been confirmed in experiments. Here, we report an experimental observation of continuum Landau modes in non-Hermitian electric circuits, in which the non-Hermitian Dirac Hamiltonian is simulated by non-reciprocal hoppings and the pseudomagnetic field is introduced by inhomogeneous complex on-site potentials. Through measuring the admittance spectrum and the eigenstates, we successfully verify key features of continuum Landau modes. Particularly, we observe the exotic voltage response acting as a rainbow trap or wave funnel through full-field excitation. This response originates from the linear relationship between the modes' center position and complex eigenvalues. Our work builds a bridge between non-Hermiticity and magnetic fields, and thus opens an avenue to explore exotic non-Hermitian physics.

Crucial role of interfacial interaction in 2D polar SiGe/GeC heterostructures

The planar charge transfer is a distinctive characteristic of the two-dimensional (2D) polar materials. When such 2D polar materials are involved in vertical heterostructures (VHs), in addition to the van der Waals (vdW) interlayer interaction, the interfacial interaction triggered by the in-plane charge transfer will play a crucial role. To deeply understand such mechanism, we conducted a comprehensive theoretical study focusing on the structural stability and electronic properties of 2D polar VHs built by commensurate SiGe/GeC bilayers with four species ordering patterns (classified as a C-group with patterns I and II and a Ge-group with patterns III and IV, respectively). It was found that the commensurate SiGe/GeC VHs are mainly stabilized by interfacial interactions (including the electrostatic interlayer bonding, the vdW force, as well as thesp2/sp3orbital hybridization), with the Ge-group being the most energetically favorable than the C-group. A net charge redistribution occurs between adjacent layers, which is significant (∼0.23-0.25 e cell-1) in patterns II and IV, but slightly small (∼0.05-0.09 e cell-1) in patterns I and III, respectively, forming spontaneousp-nheterojunctions. Such interlayer charge transfer could also lead to a polarization in the interfacial region, with the electron depletion (accumulation) close to the GeC layer and the electron accumulation (depletion) close to the SiGe layer in the C-group (the Ge-group). This type of interface dipoles could induce a built-in electric field and help to promote photogenerated electrons (holes) migration. Furthermore, a semi-metal nature with a tiny direct band gap at the SiGe layer and a semiconducting nature at the GeC layer indicate that the commensurate SiG/GeC VHs possess a type-I band alignment of heterojunction and have a wide spectrum of light absorption capabilities, indicating its promising applications for enhancing light-matter interaction and interfacial engineering.

Realization of all-band-flat photonic lattices

Flatbands play an important role in correlated quantum matter and have promising applications in photonic lattices. Synthetic magnetic fields and destructive interference in lattices are traditionally used to obtain flatbands. However, such methods can only obtain a few flatbands with most bands remaining dispersive. Here we realize all-band-flat photonic lattices of an arbitrary size by precisely controlling the coupling strengths between lattice sites to mimic those in Fock-state lattices. This allows us to go beyond the perturbative regime of strain engineering and group all eigenmodes in flatbands, which simultaneously achieves high band flatness and large usable bandwidth. We map out the distribution of each flatband in the lattices and selectively excite the eigenmodes with different chiralities. Our method paves a way in controlling band structure and topology of photonic lattices.

Patternable Process-Induced Strain in 2D Monolayers and Heterobilayers

Strain engineering in two-dimensional (2D) materials is a powerful but difficult to control approach to tailor material properties. Across applications, there is a need for device-compatible techniques to design strain within 2D materials. This work explores how process-induced strain engineering, commonly used by the semiconductor industry to enhance transistor performance, can be used to pattern complex strain profiles in monolayer MoS2 and 2D heterostructures. A traction-separation model is identified to predict strain profiles and extract the interfacial traction coefficient of 1.3 ± 0.7 MPa/μm and the damage initiation threshold of 16 ± 5 nm. This work demonstrates the utility to (1) spatially pattern the optical band gap with a tuning rate of 91 ± 1 meV/% strain and (2) induce interlayer heterostrain in MoS2-WSe2 heterobilayers. These results provide a CMOS-compatible approach to design complex strain patterns in 2D materials with important applications in 2D heterogeneous integration into CMOS technologies, moiré engineering, and confining quantum systems.

Graphene binding on black phosphorus enables high on/off ratios and mobility

Graphene is one of the most promising candidates for integrated circuits due to its robustness against short-channel effects, inherent high carrier mobility and desired gapless nature for Ohmic contact, but it is difficult to achieve satisfactory on/off ratios even at the expense of its carrier mobility, limiting its device applications. Here, we present a strategy to realize high back-gate switching ratios in a graphene monolayer with well-maintained high mobility by forming a vertical heterostructure with a black phosphorus multi-layer. By local current annealing, strain is introduced within an established area of the graphene, which forms a reflective interface with the rest of the strain-free area and thus generates a robust off-state via local current depletion. Applying a positive back-gate voltage to the heterostructure can keep the black phosphorus insulating, while a negative back-gate voltage changes the black phosphorus to be conductive because of hole accumulation. Then, a parallel channel is activated within the strain-free graphene area by edge-contacted electrodes, thereby largely inheriting the intrinsic carrier mobility of graphene in the on-state. As a result, the device can provide an on/off voltage ratio of >103 as well as a mobility of ∼8000 cm2 V-1 s-1 at room temperature, meeting the low-power criterion suggested by the International Roadmap for Devices and Systems.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

De Haas-van Alphen spectroscopy and magnetic breakdown in moiré graphene

Quantum oscillations originating from the quantization of electron cyclotron orbits provide sensitive diagnostics of electron bands and interactions. We report on nanoscale imaging of the thermodynamic magnetization oscillations caused by the de Haas-van Alphen effect in moiré graphene. Scanning by means of superconducting quantum interference device (SQUID)-on-tip in Bernal bilayer graphene crystal axis-aligned to hexagonal boron nitride reveals large magnetization oscillations with amplitudes reaching 500 Bohr magneton per electron in weak magnetic fields, unexpectedly low frequencies, and high sensitivity to superlattice filling fraction. The oscillations allow us to reconstruct the complex band structure, revealing narrow moiré bands with multiple overlapping Fermi surfaces separated by unusually small momentum gaps. We identified sets of oscillations that violate the textbook Onsager Fermi surface sum rule, signaling formation of broad-band particle-hole superposition states induced by coherent magnetic breakdown.

Imaging quantum oscillations and millitesla pseudomagnetic fields in graphene

The exceptional control of the electronic energy bands in atomically thin quantum materials has led to the discovery of several emergent phenomena1. However, at present there is no versatile method for mapping the local band structure in advanced two-dimensional materials devices in which the active layer is commonly embedded in the insulating layers and metallic gates. Using a scanning superconducting quantum interference device, here we image the de Haas-van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which shows several highly tunable bands2-4. By resolving thermodynamic quantum oscillations spanning more than 100 Landau levels in low magnetic fields, we reconstruct the band structure and its evolution with the displacement field with excellent precision and nanoscale spatial resolution. Moreover, by developing Landau-level interferometry, we show shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially induced large strain, which leads to pseudomagnetic fields of hundreds of tesla5-7, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by 1 millidegree, two orders of magnitude lower than the typical angle disorder in twisted bilayer graphene8-11. This ability to resolve the local band structure and strain at the nanoscale level enables the characterization and use of tunable band engineering in practical van der Waals devices.

Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update

This is an update of a previous review (Naumiset al2017Rep. Prog. Phys.80096501). Experimental and theoretical advances for straining graphene and other metallic, insulating, ferroelectric, ferroelastic, ferromagnetic and multiferroic 2D materials were considered. We surveyed (i) methods to induce valley and sublattice polarisation (P) in graphene, (ii) time-dependent strain and its impact on graphene's electronic properties, (iii) the role of local and global strain on superconductivity and other highly correlated and/or topological phases of graphene, (iv) inducing polarisationPon hexagonal boron nitride monolayers via strain, (v) modifying the optoelectronic properties of transition metal dichalcogenide monolayers through strain, (vi) ferroic 2D materials with intrinsic elastic (σ), electric (P) and magnetic (M) polarisation under strain, as well as incipient 2D multiferroics and (vii) moiré bilayers exhibiting flat electronic bands and exotic quantum phase diagrams, and other bilayer or few-layer systems exhibiting ferroic orders tunable by rotations and shear strain. The update features the experimental realisations of a tunable two-dimensional Quantum Spin Hall effect in germanene, of elemental 2D ferroelectric bismuth, and 2D multiferroic NiI2. The document was structured for a discussion of effects taking place in monolayers first, followed by discussions concerning bilayers and few-layers, and it represents an up-to-date overview of exciting and newest developments on the fast-paced field of 2D materials.

Giant and Controllable Valley Currents in Graphene by Double Pumped THz Light

The field of valleytronics considers the creation and manipulation of "valley states", charge excitations characterized by a particular value of the crystal momentum in the Brillouin zone. Here we show, using the example of minimally gapped (≤40 meV) graphene, that there exist lightforms that create almost perfect valley contrasting current states (up to ∼80% valley purity) in the absence of a valley contrasting charge excitation. These "momentum streaked" THz waveforms act by deforming the excited state population in momentum space such that current flows at one valley yet is blocked at the conjugate valley. This approach both unlocks the potential of graphene as a materials platform for valleytronics, as gaps of 10-40 meV are robustly found in useful experimental contexts such as graphene/hBN systems, while simultaneously providing a tool toward ultrafast light control of valley currents in diverse minimally gapped matter, including many topological insulator systems.

Local control of superconductivity in a NbSe2/CrSBr van der Waals heterostructure

Two-dimensional magnets and superconductors are emerging as tunable building-blocks for quantum computing and superconducting spintronic devices, and have been used to fabricate all two-dimensional versions of traditional devices, such as Josephson junctions. However, novel devices enabled by unique features of two-dimensional materials have not yet been demonstrated. Here, we present NbSe2/CrSBr van der Waals superconducting spin valves that exhibit infinite magnetoresistance and nonreciprocal charge transport. These responses arise from a unique metamagnetic transition in CrSBr, which controls the presence of localized stray fields suitably oriented to suppress the NbSe2 superconductivity in nanoscale regions and to break time reversal symmetry. Moreover, by integrating different CrSBr crystals in a lateral heterostructure, we demonstrate a superconductive spin valve characterized by multiple stable resistance states. Our results show how the unique physical properties of layered materials enable the realization of high-performance quantum devices based on novel working principles.

Nanobubble-induced significant reduction of the interfacial thermal conductance for few-layer graphene

The heat transport properties of van der Waals layered structures are crucial for ensuring the reliability and longevity of high-performance optoelectronic equipment. Owing to the two-dimensional nature of atomic layers, the presence of bubbles is commonly observed within these structures. Nevertheless, the effect of bubbles on the interfacial thermal conductance remains unclear. Based on the elastic membrane theory and the improved van der Waals gas state equation, we develop an analytical formula to describe the influence of bubble shape on the interfacial thermal conductance. It shows that the presence of bubbles has a considerable impact on reducing the interfacial thermal conductance across graphene/graphene interfaces. More specifically, the presence of nanobubbles can result in a reduction of up to 53% in the interfacial thermal conductance. The validity of the analytical predictions is confirmed through molecular dynamic simulations. These results offer valuable insights into the thermal management of van der Waals layered structures in the application of next-generation electronic nanodevices.

Multifunctional carbon nitride nanoarchitectures for catalysis

Catalysis is at the heart of modern-day chemical and pharmaceutical industries, and there is an urgent demand to develop metal-free, high surface area, and efficient catalysts in a scalable, reproducible and economic manner. Amongst the ever-expanding two-dimensional materials family, carbon nitride (CN) has emerged as the most researched material for catalytic applications due to its unique molecular structure with tunable visible range band gap, surface defects, basic sites, and nitrogen functionalities. These properties also endow it with anchoring capability with a large number of catalytically active sites and provide opportunities for doping, hybridization, sensitization, etc. To make considerable progress in the use of CN as a highly effective catalyst for various applications, it is critical to have an in-depth understanding of its synthesis, structure and surface sites. The present review provides an overview of the recent advances in synthetic approaches of CN, its physicochemical properties, and band gap engineering, with a focus on its exclusive usage in a variety of catalytic reactions, including hydrogen evolution reactions, overall water splitting, water oxidation, CO2 reduction, nitrogen reduction reactions, pollutant degradation, and organocatalysis. While the structural design and band gap engineering of catalysts are elaborated, the surface chemistry is dealt with in detail to demonstrate efficient catalytic performances. Burning challenges in catalytic design and future outlook are elucidated.

Elucidating the Mechanism of Large Phosphate Molecule Intercalation Through Graphene-Substrate Heterointerfaces

Intercalation is the process of inserting chemical species into the heterointerfaces of two-dimensional (2D) layered materials. While much research has focused on the intercalation of metals and small gas molecules into graphene, the intercalation of larger molecules through the basal plane of graphene remains challenging. In this work, we present a new mechanism for intercalating large molecules through monolayer graphene to form confined oxide materials at the graphene-substrate heterointerface. We investigate the intercalation of phosphorus pentoxide (P2O5) molecules directly from the vapor phase and confirm the formation of confined P2O5 at the graphene-substrate heterointerface using various techniques. Density functional theory (DFT) corroborates the experimental results and reveals the intercalation mechanism, whereby P2O5 dissociates into small fragments catalyzed by defects in the graphene that then permeates through lattice defects and reacts at the heterointerface to form P2O5. This process can also be used to form new confined metal phosphates (e.g., 2D InPO4). While the focus of this study is on P2O5 intercalation, the possibility of intercalation from predissociated molecules catalyzed by defects in graphene may exist for other types of molecules as well. This in-depth study advances our understanding of intercalation routes of large molecules via the basal plane of graphene as well as heterointerface chemical reactions leading to the formation of distinctive confined complex oxide compounds.

Massive laser pulling of graphene nanosheets in water

Light manipulation of graphene-based materials attracts much attentions. As a new light manipulation concept, optical pulling develops rapidly in the past decade. However, optical pulling of graphene in liquid is rarely reported. In this work, laser pulling of graphene nanosheets (GN) in pure water by using common gauss beams is presented. This phenomenon holds for multiple incident laser wavelengths including 405 nm, 488 nm, 532 nm and 650 nm. A particle image velocimetry software PIVlab is adopted to analyze the velocity field information of GN. The laser pulling velocity of the GN is approximately ∼ 0.5 mm/s corresponding to ∼ 103 body length/s, which increases with an increase of the incident laser energy. This work presents a contactless mothed to massively pull microscale graphene materials in simple liquid, which supplies a potential manipulation technique for micro-nanofluidic devices and also provides a platform to investigate laser-graphene interaction in a simple liquid phase medium.

Three-dimensional patterning of MoS2 with ultrafast laser

Transition metal chalcogenides, a special two-dimensional (2D) material emerged in recent years, possess unique optoelectronic properties and have been used to fabricate various optoelectronic devices. While it is essential to manufacture multifunctional devices with complex nanostructures for practical applications, 2D material devices present a tendency toward miniaturization. However, the controllable fabrication of complex nanostructures on 2D materials remains a challenge. Herein, we propose a method to create designed three-dimensional (3D) patterns on the MoS2 surface by modulating the interaction between an ultrafast laser and MoS2. Three different nanostructures, including flat, bulge, and craters, can be fabricated through laser-induced surface morphology transformation, which is related to thermal diffusion, oxidation, and ablation processes. The MoS2 field effect transistor is fabricated by ultrafast laser excitation which exhibits enhanced electrical properties. This study provides a promising strategy for 3D pattern fabrication, which is helpful for the development of multifunctional microdevices.

Aperiodic Modulation of Graphene Driven by Oxygen-Induced Reconstruction of Rh(110)

Artificial nanostructuring of graphene has served as a platform to induce variations in its structural and electronic properties, fostering the experimental observation of a wide and fascinating phenomenology. Here, we present an approach to graphene tuning, based on Rh(110) surface reconstruction induced by oxygen atoms intercalation. The resulting nanostructured graphene has been characterized by scanning tunneling microscopy (STM) complemented by low-energy electron microscopy (LEEM), micro low-energy electron diffraction (μ-LEED), micro angle-resolved photoemission spectroscopy (μ-ARPES), and micro X-ray photoelectron spectroscopy (μ-XPS) measurements under ultrahigh vacuum (UHV) conditions at room temperature (RT). It is found that by fine-tuning the O2 exposure amount, a mixture of missing row surface reconstructions of the metal surface below the graphene layer can be induced. This atomic rearrangement under the graphene layer results in aperiodic patterning of the two-dimensional (2D) material. The electronic structure of the resulting nanostructured graphene is dominated by a linear dispersion of the Dirac quasiparticles, characteristic of its free-standing state but with a p-doping character. The local effects of the underlying missing rows on the interfacial chemistry and on the quasiparticle scattering processes in graphene are studied using atomically resolved STM images. The possibilities offered by this nanostructuring approach, which consists in inducing surface reconstructions under graphene, could provide a novel tuning strategy for this 2D material.

Trapping Hydrogen Molecules between Perfect Graphene

There is a lack of deep understanding of hydrogen intercalation into graphite due to many challenges faced during characterization of the systems. Therefore, a suitable route to trap isolated hydrogen molecules (H2) between the perfect graphite lattices needs to be found. Here we realize the formation of hydrogen bubbles in graphite with controllable density, size, and layer number. We find that the molecular H2 cannot be diffused between nor escape from the defect-free graphene lattices, and it remains stable in the pressurized bubbles up to 400 °C. The internal pressure of H2 inside the bubbles is strongly temperature dependent, and it decreases as the temperature rises. The proton permeation rate can be estimated at a specific plasma power. The producing method of H2 bubbles offers a useful way for storing hydrogen in layered materials, and these materials provide a prospective research platform for studying nontrivial quantum effects in confined H2.

Flexomagnetic Effect Enhanced Ferromagnetism and Magnetoelectrochemistry in Freestanding High-Entropy Alloy Films

Freestanding thin films of functional materials enable the tuning of properties via strain and strain gradients, broadening their applications. Here, a systematic approach is proposed to fabricate freestanding CrMnFeCoNi high-entropy alloy (HEA) thin films by pulsed laser deposition using expansion-contraction of NaCl substrates and weak van der Waals interaction of the interface, which form wrinkles with inhomogeneous strain gradients when transferred to a viscous handle. We demonstrate that the nonuniform gradients of external strain (flexomagnetic effect) can induce the partial structural phase transition from FCC to BCC in the wrinkled HEA film, resulting in a 10-fold increase in its room-temperature saturation magnetization compared with the unstrained flat HEA film. Furthermore, after applying an external magnetic field, due to the different electron transfer behavior caused by the electron scattering in wrinkled and flat HEA films, their electrocatalytic magnetic responses showed a diametrically opposite picture. Our work provides a promising strategy for tuning physical and chemical properties via complex strained geometries.

Synergistic correlated states and nontrivial topology in coupled graphene-insulator heterostructures

Graphene has aroused great attention due to the intriguing properties associated with its low-energy Dirac Hamiltonian. When graphene is coupled with a correlated insulating substrate, electronic states that cannot be revealed in either individual layer may emerge in a synergistic manner. Here, we theoretically study the correlated and topological states in Coulomb-coupled and gate-tunable graphene-insulator heterostructures. By electrostatically aligning the electronic bands, charge carriers transferred between graphene and the insulator can yield a long-wavelength electronic crystal at the interface, exerting a superlattice Coulomb potential on graphene and generating topologically nontrivial subbands. This coupling can further boost electron-electron interaction effects in graphene, leading to a spontaneous bandgap formation at the Dirac point and interaction-enhanced Fermi velocity. Reciprocally, the electronic crystal at the interface is substantially stabilized with the help of cooperative interlayer Coulomb coupling. We propose a number of substrate candidates for graphene to experimentally demonstrate these effects.

Untwisting Moiré Physics: Almost Ideal Bands and Fractional Chern Insulators in Periodically Strained Monolayer Graphene

Moiré systems have emerged in recent years as a rich platform to study strong correlations. Here, we will propose a simple, experimentally feasible setup based on periodically strained graphene that reproduces several key aspects of twisted moiré heterostructures-but without introducing a twist. We consider a monolayer graphene sheet subject to a C_{2}-breaking periodic strain-induced pseudomagnetic field with period L_{M}≫a, along with a scalar potential of the same period. This system has almost ideal flat bands with valley-resolved Chern number ±1, where the deviation from ideal band geometry is analytically controlled and exponentially small in the dimensionless ratio (L_{M}/l_{B})^{2}, where l_{B} is the magnetic length corresponding to the maximum value of the pseudomagnetic field. Moreover, the scalar potential can tune the bandwidth far below the Coulomb scale, making this a very promising platform for strongly interacting topological phases. Using a combination of strong-coupling theory and self-consistent Hartree-Fock, we find quantum anomalous Hall states at integer fillings. At fractional filling, exact diagonaliztion reveals a fractional Chern insulator at parameters in the experimentally feasible range. Overall, we find that this system has larger interaction-induced gaps, smaller quasiparticle dispersion, and enhanced tunability compared to twisted graphene systems, even in their ideal limit.

Topological quantum devices: a review

The introduction of the concept of topology into condensed matter physics has greatly deepened our fundamental understanding of transport properties of electrons as well as all other forms of quasi particles in solid materials. It has also fostered a paradigm shift from conventional electronic/optoelectronic devices to novel quantum devices based on topology-enabled quantum device functionalities that transfer energy and information with unprecedented precision, robustness, and efficiency. In this article, the recent research progress in topological quantum devices is reviewed. We first outline the topological spintronic devices underlined by the spin-momentum locking property of topology. We then highlight the topological electronic devices based on quantized electron and dissipationless spin conductivity protected by topology. Finally, we discuss quantum optoelectronic devices with topology-redefined photoexcitation and emission. The field of topological quantum devices is only in its infancy, we envision many significant advances in the near future.

Engineering the Strain and Interlayer Excitons of 2D Materials via Lithographically Engraved Hexagonal Boron Nitride

Strain engineering has quickly emerged as a viable option to modify the electronic, optical, and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that, by creating atomically flat surface nanostructures in hexagonal boron nitride, we achieve an arbitrary on-chip control of both the strain distribution and magnitude on high-quality molybdenum disulfide. The phonon and exciton emissions are shown to vary in accordance with our strain field designs, enabling us to write and draw any photoluminescence color image in a single chip. Moreover, our strain engineering offers a powerful means to significantly and controllably alter the strengths and energies of interlayer excitons at room temperature. This method can be easily extended to other material systems and offers promise for functional excitonic devices.

High optical spin-filtering in antiferromagnetic stanene nanoribbons induced by band bending and uniaxial strain

Non-equilibrium spin-polarized transport properties of antiferromagnetic stanene nanoribbons are theoretically studied under the combining effect of a normal electric field and linearly polarized irradiation based on the tight-binding model at room temperature. Due to the existence of spin-orbit coupling in stanene lattice, applying normal electric field leads to splitting of band degeneracy of spin-resolved energy levels in conduction and valence bands. Furthermore, unequivalent absorption of the polarized photons at two valleys which is attributed to an antiferromagnetic exchange field results in unequal spin-polarized photocurrent for spin-up and spin-down components. Interestingly, in the presence of band bending which has been induced by edge potentials, an allowable quantum efficiency occurs over a wider wavelength region of the incident light. It is especially important that the variation of an exchange magnetic field generates spin semi-conducting behavior in the bended band structure. Moreover, it is shown that optical spin-filtering effect is obtained under the simultaneous effect of uniaxial strain and narrow edge potential.

Solid-liquid phase transition inside van der Waals nanobubbles: an atomistic perspective

The liquid-solid phase transition during the confinement of a van der Waals bubble is studied using molecular dynamics simulations. In particular, argon is considered inside a graphene bubble, where the outer membrane is a sheet of graphene, and the substrate is atomically flat graphite. A methodology to avoid metastable states of argon is developed and implemented to derive a melting curve of trapped argon. It is found that in the confinement, the melting curve of argon shifts toward higher temperatures, and the temperature shift is about 10-30 K. The ratio of the height to the radius of the GNB (H/R) decreases with increasing temperature. It also most likely undergoes an abrupt change through the liquid-crystal phase transition. The semi-liquid state of argon was detected in the transition region. At this state, the argon structure stays layered, but the atoms travel distances of several lattice constants.

Accurate quantification of the stability of the perylene-tetracarboxylic dianhydride on Au(111) molecule-surface interface

Studying inorganic/organic hybrid systems is a stepping stone towards the design of increasingly complex interfaces. A predictive understanding requires robust experimental and theoretical tools to foster trust in the obtained results. The adsorption energy is particularly challenging in this respect, since experimental methods are scarce and the results have large uncertainties even for the most widely studied systems. Here we combine temperature-programmed desorption (TPD), single-molecule atomic force microscopy (AFM), and nonlocal density-functional theory (DFT) calculations, to accurately characterize the stability of a widely studied interface consisting of perylene-tetracarboxylic dianhydride (PTCDA) molecules on Au(111). This network of methods lets us firmly establish the adsorption energy of PTCDA/Au(111) via TPD (1.74 ± 0.10 eV) and single-molecule AFM (2.00 ± 0.25 eV) experiments which agree within error bars, exemplifying how implicit replicability in a research design can benefit the investigation of complex materials properties.

Quantum simulator to emulate lower-dimensional molecular structure

Bottom-up quantum simulators have been developed to quantify the role of various interactions, dimensionality, and structure in creating electronic states of matter. Here, we demonstrated a solid-state quantum simulator emulating molecular orbitals, based solely on positioning individual cesium atoms on an indium antimonide surface. Using scanning tunneling microscopy and spectroscopy, combined with ab initio calculations, we showed that artificial atoms could be made from localized states created from patterned cesium rings. These artificial atoms served as building blocks to realize artificial molecular structures with different orbital symmetries. These corresponding molecular orbitals allowed us to simulate two-dimensional structures reminiscent of well-known organic molecules. This platform could further be used to monitor the interplay between atomic structures and the resulting molecular orbital landscape with submolecular precision.

Approaching the Intrinsic Properties of Moiré Structures Using Atomic Force Microscopy Ironing

Stacking monolayers of transition metal dichalcogenides (TMDs) has led to the discovery of a plethora of new exotic phenomena, resulting from moiré pattern formation. Due to the atomic thickness and high surface-to-volume ratio of heterostructures, the interfaces play a crucial role. Fluctuations in the interlayer distance affect interlayer coupling and moiré effects. Therefore, to access the intrinsic properties of the TMD stack, it is essential to obtain a clean and uniform interface between the layers. Here, we show that this is achieved by ironing with the tip of an atomic force microscope. This post-stacking procedure dramatically improves the homogeneity of the interfaces, which is reflected in the optical response of the interlayer exciton. We demonstrate that ironing improves the layer coupling, enhancing moiré effects and reducing disorder. This is crucial for the investigation of TMD heterostructure physics, which currently suffers from low reproducibility.

Multilayer Graphene as an Endoreversible Otto Engine

We examine the performance of a finite-time, endoreversible Otto heat engine with a working medium of monolayer or multilayered graphene subjected to an external magnetic field. As the energy spectrum of multilayer graphene under an external magnetic field depends strongly on the number of layers, so too does its thermodynamic behavior. We show that this leads to a simple relationship between the engine efficiency and the number of layers of graphene in the working medium. Furthermore, we find that the efficiency at maximum power for bilayer and trilayer working mediums can exceed that of a classical endoreversible Otto cycle. Conversely, a working medium of monolayer graphene displays identical efficiency at maximum power to a classical working medium. These results demonstrate that layered graphene can be a useful material for the construction of efficient thermal machines for diverse quantum device applications.

Graphene Nano-Blister in Graphite for Future Cathode in Dual-Ion Batteries: Fundamentals, Advances, and Prospects

The intercalating of anions into cost-effective graphite electrode provides a high operating voltage, therefore, the dual-ion batteries (DIBs) as novel energy storage device has attracted much attention recently. The "graphene in graphite" has always existed in the graphite cathode of DIBs, but has rarely been researched. It is foreseeable that the graphene blisters with the intact lattice structure in the shell can utilize its ultra-high elastic stiffness and reversible lattice expansion for increasing the storage capacity of anions in the batteries. This review proposes an expected "blister model" by introducing the high elasticity of graphene blisters and its possible formation mechanism. The unique blisters composed of multilayer graphene that do not fall off on the graphite surface may become indispensable in nanotechnology in the future development of cathode materials for DIBs.

Localised strain and doping of 2D materials

There is a growing interest in 2D materials-based devices as the replacement for established materials, such as silicon and metal oxides in microelectronics and sensing, respectively. However, the atomically thin nature of 2D materials makes them susceptible to slight variations caused by their immediate environment, inducing doping and strain, which can vary between, and even microscopically within, devices. One of the misapprehensions for using 2D materials is the consideration of unanimous intrinsic properties over different support surfaces. The interfacial interaction, intrinsic structural disorder and external strain modulate the properties of 2D materials and govern the device performance. The understanding, measurement and control of these factors are thus one of the significant challenges for the adoption of 2D materials in industrial electronics, sensing, and polymer composites. This topical review provides a comprehensive overview of the effect of strain-induced lattice deformation and its relationship with physical and electronic properties. Using the example of graphene and MoS₂ (as the prototypical 2D semiconductor), we rationalise the importance of scanning probe techniques and Raman spectroscopy to elucidate strain and doping in 2D materials. These effects can be directly and accurately characterised through Raman shifts in a non-destructive manner. A generalised model has been presented that deconvolutes the intertwined relationship between strain and doping in graphene and MoS₂ that could apply to other members of the 2D materials family. The emerging field of straintronics is presented, where the controlled application of strain over 2D materials induces tuneable physical and electronic properties. These perspectives highlight practical considerations for strain engineering and related microelectromechanical applications.

Multiple Electronic Phases Coexisting under Inhomogeneous Strains in the Correlated Insulator

Monolayer transition metal dichalcogenides (TMDs) can host exotic phenomena such as correlated insulating and charge-density-wave (CDW) phases. Such properties are strongly dependent on the precise atomic arrangements. Strain, as an effective tuning parameter in atomic arrangements, has been widely used for tailoring material's structures and related properties, yet to date, a convincing demonstration of strain-induced dedicate phase transition at nanometer scale in monolayer TMDs has been lacking. Here, a strain engineering technique is developed to controllably introduce out-of-plane atomic deformations in monolayer CDW material 1T-NbSe₂ . The scanning tunneling microscopy and spectroscopy (STM and STS) measurements, accompanied by first-principles calculations, demonstrate that the CDW phase of 1T-NbSe₂ can survive under both tensile and compressive strains even up to 5%. Moreover, significant strain-induced phase transitions are observed, i.e., tensile (compressive) strains can drive 1T-NbSe₂ from an intrinsic-correlated insulator into a band insulator (metal). Furthermore, experimental evidence of the multiple electronic phase coexistence at the nanoscale is provided. The results shed new lights on the strain engineering of correlated insulator and useful for design and development of strain-related nanodevices.

Giant Periodic Pseudomagnetic Fields in Strained Kagome Magnet FeSn Epitaxial Films on SrTiO3(111) Substrate

Quantum materials, particularly Dirac materials with linearly dispersing bands, can be effectively tuned by strain-induced lattice distortions leading to a pseudomagnetic field that strongly modulates their electronic properties. Here, we grow kagome magnet FeSn films, consisting of alternatingly stacked Sn₂ honeycomb (stanene) and Fe₃Sn kagome layers, on SrTiO₃(111) substrates by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we show that the Sn honeycomb layer can be periodically deformed by epitaxial strain for a film thickness below 10 nm, resulting in differential conductance peaks consistent with Landau levels generated by a pseudomagnetic field greater than 1000 T. Our findings demonstrate the feasibility of strain engineering the electronic properties of topological magnets at the nanoscale.

Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties

Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high-performance 2D-material-based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less-discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever-increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.

Theory of quantized photonic spin Hall effect in strained graphene under a sub-Tesla external magnetic field

The quantized photonic spin Hall effect (PSHE) in the strained graphene-substrate system is predicted under a sub-Tesla external magnetic field, which is two orders of magnitude smaller than required to produce the quantized effect in the conventional graphene-substrate system. It is found that in-plane and transverse spin-dependent splittings in the PSHE, exhibit different quantized behaviors and are closely related to the reflection coefficients. Unlike the quantized PSHE in the conventional graphene-substrate system formed by the splitting of real Landau levels, the quantized PSHE in the strained graphene-substrate system is attributed to the splitting of pseudo-Landau levels caused by the pseudo-magnetic field and the lifting of valley degeneracy of the n ≠ 0 pseudo-Landau levels induced by the sub-Tesla external magnetic field. At the same time, the pseudo-Brewster angles of the system are also quantized with the change of Fermi energy. The sub-Tesla external magnetic field and the PSHE appear as quantized peak values near these angles. The giant quantized PSHE is expected to be used for direct optical measurements of the quantized conductivities and pseudo-Landau levels in the monolayer strained graphene.

Strain-Induced Plasmon Confinement in Polycrystalline Graphene

Terahertz spectroscopy is a perfect tool to investigate the electronic intraband conductivity of graphene, but a phenomenological model (Drude-Smith) is often needed to describe disorder. By studying the THz response of isotropically strained polycrystalline graphene and using a fully atomistic computational approach to fit the results, we demonstrate here the connection between the Drude-Smith parameters and the microscopic behavior. Importantly, we clearly show that the strain-induced changes in the conductivity originate mainly from the increased separation between the single-crystal grains, leading to enchanced localization of the plasmon excitations. Only at the lowest strain values explored, a behavior consistent with the deformation of the individual grains can instead be observed.

In-situ atomic level observation of the strain response of graphene lattice

Strain is inevitable in two-dimensional (2D) materials, regardless of whether the film is suspended or supported. However, the direct measurement of strain response at the atomic scale is challenging due to the difficulties of maintaining both flexibility and mechanical stability at low temperature under UHV conditions. In this work, we have implemented a compact nanoindentation system with a size of [Formula: see text] 160 mm[Formula: see text] [Formula: see text] 5.2 mm in a scanning tunneling microscope (STM) sample holder, which enables the reversible control of strain and gate electric field. A combination of gearbox and piezoelectric actuator allowed us to modulate the depth of the indentation continuously with nanometer precision. The 2D materials were transferred onto the polyimide film. Pd clamp was used to enhance the strain transfer from the polyimide from to the 2D layers. Using this unique technique, strain response of graphene lattice were observed at atomic precision. In the relaxed graphene, strain is induced mainly by local curvature. However, in the strained graphene with tented structure, the lattice parameters become more sensitive to the indentor height change and stretching strain is increased additionally. Moreover, the gate controllability is confirmed by measuring the dependence of the STM tip height on gate voltage.

Laser Induced Coffee-Ring Structure through Solid-Liquid Transition for Color Printing

Metallic micro/nano structures with special physicochemical properties have undergone rapid development owing to their broad applications in micromachines and microdevices. Ultrafast laser processing is generally accepted as an effective technology for functional structures manufacture, however, the controllable fabrication of specific metallic micro/nano structures remains a challenge. Here, this work proposes a novel strategy of laser induced transient solid-liquid transition to fabricate unique structures. Through modulating the transient state of metal from solid to liquid phase using the initial pulse excitation, the subsequent ultrafast pulse-induced recoil pressure can suppress the plasma emission and removal of liquid phase metals, resulting in the controllable fabrication of coffee-ring structures. The solid-liquid transition dynamics, which related with the transient reflectivity and plasma intensity, are revealed by established two temperature model coupled with molecular dynamics model. The coffee-ring structure exhibits tunable structure color owing to various optical response, which can be used for color printing with large scale and high resolution. This work provides a promising strategy for fabricating functional micro/nano structures, which can greatly broaden the potential applications.

Time-Dependent Pinning of Nanoblisters Confined by Two-Dimensional Sheets. Part 1: Scaling Law and Hydrostatic Pressure

Understanding the mechanics of blisters is important for studying two-dimensional (2D) materials, where nanoscale blisters appear frequently in their heterostructures. It also benefits the understanding of a novel partial wetting phenomenon known as elastic wetting, where droplets are confined by thin films. In this two-part work, we study the static mechanics of nanoscale blisters confined between a 2D elastic sheet and its substrate (part 1) as well as their pinning/depinning dynamics (part 2). Here, in part 1, we investigate the morphology characteristics and hydrostatic pressures of the blisters by using atomic force microscopy (AFM) measurements and theoretical analysis. The morphology characteristics of the blisters are shown to be the interplay results of the elasticity of the capping sheet, the adhesion between the capping sheet and the substrate, and the interfacial tensions. A universal scaling law is observed for the blisters in the experiments. Our analyses show that the hydrostatic pressures inside the blisters can be estimated from their morphology characteristics. The reliability of such an estimation is verified by AFM indentation measurements of the hydrostatic pressures of a variety of blisters.