1
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Zhao B, Ren G, Mei H, Wu VC, Singh S, Jung GY, Chen H, Giovine R, Niu S, Thind AS, Salman J, Settineri NS, Chakoumakos BC, Manley ME, Hermann RP, Lupini AR, Chi M, Hachtel JA, Simonov A, Teat SJ, Clément RJ, Kats MA, Ravichandran J, Mishra R. Giant Modulation of Refractive Index from Picoscale Atomic Displacements. Adv Mater 2024:e2311559. [PMID: 38520395 DOI: 10.1002/adma.202311559] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 02/28/2024] [Indexed: 03/25/2024]
Abstract
It is shown that structural disorder-in the form of anisotropic, picoscale atomic displacements-modulates the refractive index tensor and results in the giant optical anisotropy observed in BaTiS3, a quasi-1D hexagonal chalcogenide. Single-crystal X-ray diffraction studies reveal the presence of antipolar displacements of Ti atoms within adjacent TiS6 chains along the c-axis, and threefold degenerate Ti displacements in the a-b plane. 47/49Ti solid-state NMR provides additional evidence for those Ti displacements in the form of a three-horned NMR lineshape resulting from a low symmetry local environment around Ti atoms. Scanning transmission electron microscopy is used to directly observe the globally disordered Ti a-b plane displacements and find them to be ordered locally over a few unit cells. First-principles calculations show that the Ti a-b plane displacements selectively reduce the refractive index along the ab-plane, while having minimal impact on the refractive index along the chain direction, thus resulting in a giant enhancement in the optical anisotropy. By showing a strong connection between structural disorder with picoscale displacements and the optical response in BaTiS3, this study opens a pathway for designing optical materials with high refractive index and functionalities such as large optical anisotropy and nonlinearity.
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Affiliation(s)
- Boyang Zhao
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
| | - Guodong Ren
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, 63130, USA
| | - Hongyan Mei
- Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Vincent C Wu
- Materials Department and Materials Research Laboratory, University of California, Santa Barbara, CA, 93106, USA
| | - Shantanu Singh
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
| | - Gwan Yeong Jung
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, 63130, USA
| | - Huandong Chen
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
| | - Raynald Giovine
- Materials Department and Materials Research Laboratory, University of California, Santa Barbara, CA, 93106, USA
| | - Shanyuan Niu
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
| | - Arashdeep S Thind
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, 63130, USA
| | - Jad Salman
- Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Nick S Settineri
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Bryan C Chakoumakos
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Michael E Manley
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Raphael P Hermann
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Andrew R Lupini
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Miaofang Chi
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Arkadiy Simonov
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 1-5/10, Zürich, 8093, Switzerland
| | - Simon J Teat
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Raphaële J Clément
- Materials Department and Materials Research Laboratory, University of California, Santa Barbara, CA, 93106, USA
| | - Mikhail A Kats
- Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Jayakanth Ravichandran
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA
- Core Center of Excellence in Nano Imaging, University of Southern California, Los Angeles, CA, 90089, USA
| | - Rohan Mishra
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, 63130, USA
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, 63130, USA
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2
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Gui Z, Li W, Huang L. Emergence of Improper Electronic Ferroelectricity and Flat Band in Twisted Bilayer Tl 2S. Nano Lett 2024; 24:3231-3236. [PMID: 38415606 DOI: 10.1021/acs.nanolett.4c00141] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/29/2024]
Abstract
Two-dimensional (2D) ferroelectrics possessing out-of-plane (OP) polarization are highly desirable for applications and fundamental physics. Here, by first-principles calculations, we reveal that large-angle interlayer twisting can efficiently stabilize an unexpected ordering of sizable electric dipoles, producing OP polarization out of the centrosymmetric ground-state structure of Tl2S, in great contrast to the recently proposed interlayer-sliding ferroelectricity. The ferroelectricity originates from a nonlinear coupling between a polar order dominantly contributed by electrons and an unstable phonon mode associated with a commensurate k point (1/3, 1/3, 0) in the two constituent monolayers, therefore indicating an improper and electronic ferroelectric nature. More interestingly, a flat band and a van Hove singularity occur in its electronic structures just below the Fermi level in the large-angle twisted bilayer Tl2S. The unusual coexistence of improper electronic ferroelectricity, a flat band, and a van Hove singularity in one 2D material offers exceptional opportunities for exploring novel physics and applications.
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Affiliation(s)
- Zhigang Gui
- Department of Physics & Academy for Advanced Interdisciplinary Studies, Southern University of Science & Technology, Shenzhen, Guangdong 518055, China
| | - Wei Li
- Computer, Computational, and Statistical Sciences Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Li Huang
- Department of Physics & Academy for Advanced Interdisciplinary Studies, Southern University of Science & Technology, Shenzhen, Guangdong 518055, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
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3
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Arndt ND, Hershkovitz E, Shah L, Kjærnes K, Yang CY, Balakrishnan PP, Shariff MS, Tauro S, Gopman DB, Kirby BJ, Grutter AJ, Tybell T, Kim H, Need RF. Reduction-Induced Magnetic Behavior in LaFeO 3-δ Thin Films. Materials (Basel) 2024; 17:1188. [PMID: 38473659 DOI: 10.3390/ma17051188] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 02/25/2024] [Accepted: 02/28/2024] [Indexed: 03/14/2024]
Abstract
The effect of oxygen reduction on the magnetic properties of LaFeO3-δ (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic behavior were observed in nominally identical LFO films grown on substrates prepared using different common methods. In an LFO film grown on as-received SrTiO3 (STO) substrate, the original perovskite film structure was preserved following reduction, and remnant magnetization was only seen at low temperatures. In a LFO film grown on annealed STO, the LFO lost significantly more oxygen and the microstructure decomposed into La- and Fe-rich regions with remnant magnetization that persisted up to room temperature. These results demonstrate an ability to access multiple, distinct magnetic states via oxygen reduction in the same starting material and suggest LFO may be a suitable materials platform for nonvolatile multistate memory.
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Affiliation(s)
- Nathan D Arndt
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Eitan Hershkovitz
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Labdhi Shah
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Kristoffer Kjærnes
- Department of Electronic Systems, NTNU-Norwegian University of Science and Technology, 7491 Trondheim, Norway
| | - Chao-Yao Yang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan
| | - Purnima P Balakrishnan
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MA 20899, USA
| | - Mohammed S Shariff
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Shaun Tauro
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Daniel B Gopman
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MA 20899, USA
| | - Brian J Kirby
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MA 20899, USA
| | - Alexander J Grutter
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MA 20899, USA
| | - Thomas Tybell
- Department of Electronic Systems, NTNU-Norwegian University of Science and Technology, 7491 Trondheim, Norway
| | - Honggyu Kim
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Ryan F Need
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
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4
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Gauquelin N, Forte F, Jannis D, Fittipaldi R, Autieri C, Cuono G, Granata V, Lettieri M, Noce C, Miletto-Granozio F, Vecchione A, Verbeeck J, Cuoco M. Pattern Formation by Electric-Field Quench in a Mott Crystal. Nano Lett 2023; 23:7782-7789. [PMID: 37200109 DOI: 10.1021/acs.nanolett.3c00574] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
The control of the Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca2RuO4 Mott insulator. We demonstrate how an applied electric field spatially reconstructs the insulating phase that, uniquely after switching off the electric field, exhibits nanoscale stripe domains. The stripe pattern has regions with inequivalent octahedral distortions that we directly observe through high-resolution scanning transmission electron microscopy. The nanotexture depends on the orientation of the electric field; it is nonvolatile and rewritable. We theoretically simulate the charge and orbital reconstruction induced by a quench dynamics of the applied electric field providing clear-cut mechanisms for the stripe phase formation. Our results open the path for the design of nonvolatile electronics based on voltage-controlled nanometric phases.
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Affiliation(s)
- Nicolas Gauquelin
- Electron Microscopy for Materials Research (EMAT), Department of Physics, University of Antwerp, BE-2020 Antwerpen, Belgium
- NANOlab Center of Excellence, University of Antwerp, BE-2020 Antwerpen, Belgium
| | - Filomena Forte
- CNR-SPIN, I-84084 Fisciano, Salerno, Italy
- Dipartimento di Fisica "E.R. Caianiello", Università di Salerno, I-84084 Fisciano, Salerno, Italy
| | - Daen Jannis
- Electron Microscopy for Materials Research (EMAT), Department of Physics, University of Antwerp, BE-2020 Antwerpen, Belgium
- NANOlab Center of Excellence, University of Antwerp, BE-2020 Antwerpen, Belgium
| | - Rosalba Fittipaldi
- CNR-SPIN, I-84084 Fisciano, Salerno, Italy
- Dipartimento di Fisica "E.R. Caianiello", Università di Salerno, I-84084 Fisciano, Salerno, Italy
| | - Carmine Autieri
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Giuseppe Cuono
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Veronica Granata
- Dipartimento di Fisica "E.R. Caianiello", Università di Salerno, I-84084 Fisciano, Salerno, Italy
| | | | - Canio Noce
- CNR-SPIN, I-84084 Fisciano, Salerno, Italy
- Dipartimento di Fisica "E.R. Caianiello", Università di Salerno, I-84084 Fisciano, Salerno, Italy
| | - Fabio Miletto-Granozio
- CNR-SPIN, I-80126 Napoli, Italy
- Dipartimento di Fisica, Università di Napoli, I-80126 Napoli, Italy
| | - Antonio Vecchione
- CNR-SPIN, I-84084 Fisciano, Salerno, Italy
- Dipartimento di Fisica "E.R. Caianiello", Università di Salerno, I-84084 Fisciano, Salerno, Italy
| | - Johan Verbeeck
- Electron Microscopy for Materials Research (EMAT), Department of Physics, University of Antwerp, BE-2020 Antwerpen, Belgium
- NANOlab Center of Excellence, University of Antwerp, BE-2020 Antwerpen, Belgium
| | - Mario Cuoco
- CNR-SPIN, I-84084 Fisciano, Salerno, Italy
- Dipartimento di Fisica "E.R. Caianiello", Università di Salerno, I-84084 Fisciano, Salerno, Italy
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5
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Kim JR, Sohn B, Lee HJ, Lee S, Ko EK, Hahn S, Lee S, Kim Y, Kim D, Kim HJ, Kim Y, Son J, Ahn CH, Walker FJ, Go A, Kim M, Kim CH, Kim C, Noh TW. Heteroepitaxial Control of Fermi Liquid, Hund Metal, and Mott Insulator Phases in Single-Atomic-Layer Ruthenates. Adv Mater 2023; 35:e2208833. [PMID: 36739615 DOI: 10.1002/adma.202208833] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2022] [Revised: 01/08/2023] [Indexed: 06/18/2023]
Abstract
Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities, and great efforts have been made to manipulate interfacial electronic phases. However, realizing such phases is often hampered by the inability to directly access the electronic structure information; most correlated interfacial phenomena appear within a few atomic layers from the interface. Here, atomic-scale epitaxy and photoemission spectroscopy are utilized to realize the interface control of correlated electronic phases in atomic-scale ruthenate-titanate heterostructures. While bulk SrRuO3 is a ferromagnetic metal, the heterointerfaces exclusively generate three distinct correlated phases in the single-atomic-layer limit. The theoretical analysis reveals that atomic-scale structural proximity effects yield Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO3 . These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure. Moreover, this experimental platform suggests a way to control interfacial electronic phases of various correlated materials.
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Affiliation(s)
- Jeong Rae Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Byungmin Sohn
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
- Department of Applied Physics, Yale University, New Haven, CT, 06520, USA
| | - Hyeong Jun Lee
- Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), Daejeon, 34126, South Korea
| | - Sangmin Lee
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, South Korea
| | - Eun Kyo Ko
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Sungsoo Hahn
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Sangjae Lee
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
| | - Younsik Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Donghan Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Hong Joon Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Youngdo Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Jaeseok Son
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Charles H Ahn
- Department of Applied Physics, Yale University, New Haven, CT, 06520, USA
- Department of Physics, Yale University, New Haven, CT, 06520, USA
| | - Frederick J Walker
- Department of Applied Physics, Yale University, New Haven, CT, 06520, USA
| | - Ara Go
- Department of Physics, Chonnam National University, Gwangju, 61186, South Korea
| | - Miyoung Kim
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, South Korea
| | - Choong H Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Changyoung Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
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6
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Kim D, Kim Y, Sohn B, Kim M, Kim B, Noh TW, Kim C. Electric Control of 2D Van Hove Singularity in Oxide Ultra-Thin Films. Adv Mater 2023; 35:e2207188. [PMID: 36764325 DOI: 10.1002/adma.202207188] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Revised: 01/02/2023] [Indexed: 05/17/2023]
Abstract
Divergent density of states (DOS) can induce extraordinary phenomena such as significant enhancement of superconductivity and unexpected phase transitions. Moreover, van Hove singularities (VHSs) lead to divergent DOS in 2D systems. Despite recent interest in VHSs, only a few controllable cases have been reported to date. In this work, by utilizing an atomically ultra-thin SrRuO3 film, the electronic structure of a 2D VHS is investigated with angle-resolved photoemission spectroscopy and transport properties are controlled. By applying electric fields with alkali metal deposition and ionic-liquid gating methods, the 2D VHS and the sign of the charge carrier are precisely controlled. Use of a tunable 2D VHS in an atomically flat oxide film could serve as a new strategy to realize infinite DOS near the Fermi level, thereby allowing efficient tuning of electric properties.
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Affiliation(s)
- Donghan Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Younsik Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Byungmin Sohn
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Minsoo Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Bongju Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Changyoung Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
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7
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Sygletou M, Benedetti S, di Bona A, Canepa M, Bisio F, Bellingeri E. In-Operando Optical Spectroscopy of Field-Effect-Gated Al-Doped ZnO. ACS Appl Mater Interfaces 2023; 15:3112-3118. [PMID: 36602943 DOI: 10.1021/acsami.2c16668] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Transparent conductive oxides (TCO) have the unique characteristics of combining optical transparency with high electrical conductivity; such a property makes them uniquely alluring for applications in visible and infrared photonics. One of their most interesting features is the large sensitivity of their optical response to the doping level. We performed the active electrical manipulation of the dielectric properties of aluminum-doped ZnO (AZO), a TCO-based on Earth-abundant elements. We actively tuned the optical and electric performances of AZO films by means of an applied voltage in a parallel-plate capacitor configuration, with SrTiO3 as the dielectric, and monitored the effect of charge injection/depletion by means of in-operando spectroscopic ellipsometry. Calculations of the optical response of the gated system allowed us to extract the spatially resolved variations in the dielectric function of the TCO and infer the injected/depleted charge profile at the interface.
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Affiliation(s)
- Maria Sygletou
- OPTMATLAB, Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146Genova, Italy
| | | | | | - Maurizio Canepa
- OPTMATLAB, Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146Genova, Italy
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8
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Chen Y, Yuan X, Shan S, Zhang C, Liu R, Zhang X, Zhuang W, Chen Y, Xu Y, Zhang R, Wang X. Significant Reduction of the Dead Layers by the Strain Release in La 0.7Sr 0.3MnO 3 Heterostructures. ACS Appl Mater Interfaces 2022; 14:39673-39678. [PMID: 35984645 DOI: 10.1021/acsami.2c12899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Great efforts have been devoted to exploring the emergent phenomena occurring in heterostructures of correlated oxides. However, the presence of both magnetic and electrical dead layers in functional oxide films generally obstructs the device functionalization and miniaturization. Here, we demonstrate an effective strategy to significantly reduce the thickness of dead layers in a prototypical correlated oxide system, La0.7Sr0.3MnO3 (LSMO) grown on LaAlO3 (LAO) substrates, via strain engineering by inserting a Sr3Al2O6 buffer layer with a different thickness at heterointerfaces. In this way, the thicknesses of the magnetic and electrical dead layers of LSMO films on the LAO substrates notably decrease from 8 to 4 unit cells and from 13 to 9 unit cells, respectively. Our results provide a convenient method to minimize or even eliminate the dead layers of correlated oxides through the interfacial strain engineering, which has potential applications in nanoscale oxide spintronic devices.
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Affiliation(s)
- Yongda Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Xiao Yuan
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Siqi Shan
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Chong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Ruxin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Wenzhuo Zhuang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Yequan Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Yongbing Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
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9
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Teruya R, Sato T, Yamashita M, Hanasaki N, Ueda A, Matsuda M. Reversible Insulator–Metal Transition by Chemical Doping and Dedoping of a Mott Insulator. Angew Chem Int Ed Engl 2022; 61:e202206428. [DOI: 10.1002/anie.202206428] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/02/2022] [Indexed: 11/12/2022]
Affiliation(s)
- Ryota Teruya
- Department of Chemistry Graduate School of Science and Technology Kumamoto University 2-39-1 Kurokami Chuo-ku, Kumamoto 860-8555 Japan
| | - Tetsu Sato
- Department of Chemistry Graduate School of Science Tohoku University 6-3 Aramaki-Aza-Aoba Aoba-ku, Sendai 980-8578 Japan
| | - Masahiro Yamashita
- Department of Chemistry Graduate School of Science Tohoku University 6-3 Aramaki-Aza-Aoba Aoba-ku, Sendai 980-8578 Japan
| | - Noriaki Hanasaki
- Department of Physics Graduate School of Science Osaka University 1-1 Machikaneyama Toyonaka, Osaka 560-0043 Japan
| | - Akira Ueda
- Department of Chemistry Graduate School of Science and Technology Kumamoto University 2-39-1 Kurokami Chuo-ku, Kumamoto 860-8555 Japan
| | - Masaki Matsuda
- Department of Chemistry Graduate School of Science and Technology Kumamoto University 2-39-1 Kurokami Chuo-ku, Kumamoto 860-8555 Japan
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10
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Teruya R, Sato T, Yamashita M, Hanasaki N, Ueda A, Matsuda M. Reversible Insulator–Metal Transition by Chemical Doping and Dedoping of a Mott Insulator. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202206428] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Ryota Teruya
- Kumamoto University: Kumamoto Daigaku Chemistry JAPAN
| | - Tetsu Sato
- Tohoku University: Tohoku Daigaku Chemistry JAPAN
| | | | | | - Akira Ueda
- Kumamoto University: Kumamoto Daigaku Chemistry JAPAN
| | - Masaki Matsuda
- Kumamoto University Chemistry Kurokami 2-39-1 860-8555 Kumamoto JAPAN
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11
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Yukawa R, Kobayashi M, Kanda T, Shiga D, Yoshimatsu K, Ishibashi S, Minohara M, Kitamura M, Horiba K, Santander-Syro AF, Kumigashira H. Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide. Nat Commun 2021; 12:7070. [PMID: 34862386 DOI: 10.1038/s41467-021-27327-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2021] [Accepted: 11/12/2021] [Indexed: 11/09/2022] Open
Abstract
The metal-insulator transition (MIT), a fascinating phenomenon occurring in some strongly correlated materials, is of central interest in modern condensed-matter physics. Controlling the MIT by external stimuli is a key technological goal for applications in future electronic devices. However, the standard control by means of the field effect, which works extremely well for semiconductor transistors, faces severe difficulties when applied to the MIT. Hence, a radically different approach is needed. Here, we report an MIT induced by resonant tunneling (RT) in double quantum well (QW) structures of strongly correlated oxides. In our structures, two layers of the strongly correlated conductive oxide SrVO3 (SVO) sandwich a barrier layer of the band insulator SrTiO3. The top QW is a marginal Mott-insulating SVO layer, while the bottom QW is a metallic SVO layer. Angle-resolved photoemission spectroscopy experiments reveal that the top QW layer becomes metallized when the thickness of the tunneling barrier layer is reduced. An analysis based on band structure calculations indicates that RT between the quantized states of the double QW induces the MIT. Our work opens avenues for realizing the Mott-transistor based on the wave-function engineering of strongly correlated electrons.
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12
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Sohn B, Kim JR, Kim CH, Lee S, Hahn S, Kim Y, Huh S, Kim D, Kim Y, Kyung W, Kim M, Kim M, Noh TW, Kim C. Observation of metallic electronic structure in a single-atomic-layer oxide. Nat Commun 2021; 12:6171. [PMID: 34702805 PMCID: PMC8548526 DOI: 10.1038/s41467-021-26444-z] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2021] [Accepted: 10/05/2021] [Indexed: 11/08/2022] Open
Abstract
Correlated electrons in transition metal oxides exhibit a variety of emergent phases. When transition metal oxides are confined to a single-atomic-layer thickness, experiments so far have shown that they usually lose diverse properties and become insulators. In an attempt to extend the range of electronic phases of the single-atomic-layer oxide, we search for a metallic phase in a monolayer-thick epitaxial SrRuO3 film. Combining atomic-scale epitaxy and angle-resolved photoemission measurements, we show that the monolayer SrRuO3 is a strongly correlated metal. Systematic investigation reveals that the interplay between dimensionality and electronic correlation makes the monolayer SrRuO3 an incoherent metal with orbital-selective correlation. Furthermore, the unique electronic phase of the monolayer SrRuO3 is found to be highly tunable, as charge modulation demonstrates an incoherent-to-coherent crossover of the two-dimensional metal. Our work emphasizes the potentially rich phases of single-atomic-layer oxides and provides a guide to the manipulation of their two-dimensional correlated electron systems.
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Affiliation(s)
- Byungmin Sohn
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Jeong Rae Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Choong H Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Sangmin Lee
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Korea
| | - Sungsoo Hahn
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Younsik Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Soonsang Huh
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Donghan Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Youngdo Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Wonshik Kyung
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Minsoo Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Miyoung Kim
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Korea
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Korea.
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.
| | - Changyoung Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Korea.
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.
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13
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Chen Z, Liu Y, Zhang H, Liu Z, Tian H, Sun Y, Zhang M, Zhou Y, Sun J, Xie Y. Electric field control of superconductivity at the LaAlO 3/KTaO 3(111) interface. Science 2021; 372:721-724. [PMID: 33986177 DOI: 10.1126/science.abb3848] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2020] [Accepted: 04/02/2021] [Indexed: 11/02/2022]
Abstract
The oxide interface between LaAlO3 and KTaO3(111) can harbor a superconducting state. We report that by applying a gate voltage (V G) across KTaO3, the interface can be continuously tuned from superconducting into insulating states, yielding a dome-shaped T c-V G dependence, where T c is the transition temperature. The electric gating has only a minor effect on carrier density but a strong one on mobility. We interpret the tuning of mobility in terms of change in the spatial profile of the carriers in the interface and hence, effective disorder. As the temperature is decreased, the resistance saturates at the lowest temperature on both superconducting and insulating sides, suggesting the emergence of a quantum metallic state associated with a failed superconductor and/or fragile insulator.
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Affiliation(s)
- Zheng Chen
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yuan Liu
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Hui Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhongran Liu
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - He Tian
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yanqiu Sun
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Meng Zhang
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yi Zhou
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.,Kavli Institute for Theoretical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.,School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yanwu Xie
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China. .,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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14
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Mandal AK, Jana A, Chowdhury S, Tiwari A, Choudhary RJ, Phase DM. Mixed Mott-Hubbard and charge transfer nature of 4H-SrMnO 3thin film on Si (100). J Phys Condens Matter 2021; 33:235501. [PMID: 33973533 DOI: 10.1088/1361-648x/abe8a3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2020] [Accepted: 02/22/2021] [Indexed: 06/12/2023]
Abstract
Room temperature electronic structure of polycrystalline 4H-SrMnO3thin film grown on Si (100) substrate has been studied using resonance photo emission spectroscopy and soft x-ray absorption spectroscopy measurements. Presence of charge transfer screen Mn 3dnLfinal state along with the 3dn-1final state at the valence band edge of 4H-SrMnO3thin film confirms that the ground state is strongly mixed between Mn 3dand O 2pstates. The estimated equivalent values of on-site Coulomb interaction energy (U) and O 2pto Mn 3d- charge transfer energy (Δ) (U≈ Δ ≈ 4.8 eV) from the combination of occupied and unoccupied spectra further confirm the intermediate Mott-Hubbard and charge transfer insulator nature of 4H-SrMnO3film. Despite having similar Mn 4+ valence state in 4H-SrMnO3and cubic SrMnO3, 4H phase is observed to reveal much higher band gap ∼1.5 eV than the cubic phase (0.3 eV), which arises due to different MnO6octahedra environment.
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Affiliation(s)
- Arup Kumar Mandal
- UGC-DAE Consortium for Scientific Research, Indore-452001, Madhya Pradesh, India
| | - Anupam Jana
- UGC-DAE Consortium for Scientific Research, Indore-452001, Madhya Pradesh, India
| | - Sourav Chowdhury
- UGC-DAE Consortium for Scientific Research, Indore-452001, Madhya Pradesh, India
| | - Achyut Tiwari
- Indian Institute of Technology (Indian School of Mines), Dhanbad-826004, Jharkhand, India
| | - R J Choudhary
- UGC-DAE Consortium for Scientific Research, Indore-452001, Madhya Pradesh, India
| | - D M Phase
- UGC-DAE Consortium for Scientific Research, Indore-452001, Madhya Pradesh, India
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15
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Sohn C, Gao X, Vasudevan RK, Neumayer SM, Balke N, Ok JM, Lee D, Skoropata E, Jeong HY, Kim YM, Lee HN. Strain-driven autonomous control of cation distribution for artificial ferroelectrics. Sci Adv 2021; 7:7/18/eabd7394. [PMID: 33910905 PMCID: PMC8081366 DOI: 10.1126/sciadv.abd7394] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/10/2020] [Accepted: 03/10/2021] [Indexed: 06/12/2023]
Abstract
In past few decades, there have been substantial advances in theoretical material design and experimental synthesis, which play a key role in the steep ascent of developing functional materials with unprecedented properties useful for next-generation technologies. However, the ultimate goal of synthesis science, i.e., how to locate atoms in a specific position of matter, has not been achieved. Here, we demonstrate a unique way to inject elements in a specific crystallographic position in a composite material by strain engineering. While the use of strain so far has been limited for only mechanical deformation of structures or creation of elemental defects, we show another powerful way of using strain to autonomously control the atomic position for the synthesis of new materials and structures. We believe that our synthesis methodology can be applied to wide ranges of systems, thereby providing a new route to functional materials.
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Affiliation(s)
- Changhee Sohn
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Xiang Gao
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Rama K Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Sabine M Neumayer
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Nina Balke
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Jong Mok Ok
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Dongkyu Lee
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Elizabeth Skoropata
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Hu Young Jeong
- UNIST Central Research Facilities, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Suwon 16419, Republic of Korea
| | - Ho Nyung Lee
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
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16
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Rocci M, Suri D, Kamra A, Takamura Y, Nemes NM, Martinez JL, Hernandez MG, Moodera JS. Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage. Nano Lett 2021; 21:216-221. [PMID: 33275436 DOI: 10.1021/acs.nanolett.0c03547] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Significant control over the properties of a high-carrier density superconductor via an applied electric field has been considered infeasible due to screening of the field over atomic length scales. Here, we demonstrate an enhancement of up to 30% in critical current in a back-gate tunable NbN micro- and nano superconducting bridges. Our suggested plausible mechanism of this enhancement in critical current based on surface nucleation and pinning of Abrikosov vortices is consistent with expectations and observations for type-II superconductor films with thicknesses comparable to their coherence length. Furthermore, we demonstrate an applied electric field-dependent infinite electroresistance and hysteretic resistance. Our work presents an electric field driven enhancement in the superconducting property in type-II superconductors which is a crucial step toward the understanding of field-effects on the fundamental properties of a superconductor and its exploitation for logic and memory applications in a superconductor-based low-dissipation digital computing paradigm.
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Affiliation(s)
- Mirko Rocci
- Francis Bitter Magnet Laboratory and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- NEST, Instituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa, Italy
| | - Dhavala Suri
- Francis Bitter Magnet Laboratory and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Akashdeep Kamra
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Yota Takamura
- School of Engineering, Tokyo Institute of Technology, Tokyo 152-8550, Japan
| | - Norbert M Nemes
- GFMC, Departamento de Física de Materiales, Universidad Complutense de Madrid, E-28040 Madrid, Spain
| | - Jose L Martinez
- Instituto de Ciencia de Materiales de Madrid, C.S.I.C., Cantoblanco, E-28049 Madrid, Spain
| | - Mar Garcia Hernandez
- Instituto de Ciencia de Materiales de Madrid, C.S.I.C., Cantoblanco, E-28049 Madrid, Spain
| | - Jagadeesh S Moodera
- Francis Bitter Magnet Laboratory and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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17
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Wong HF, Ng SM, Zhang W, Liu YK, Wong PKJ, Tang CS, Lam KK, Zhao XW, Meng ZG, Fei LF, Cheng WF, Nordheim DV, Wong WY, Wang ZR, Ploss B, Dai JY, Mak CL, Wee ATS, Leung CW. Modulating Magnetism in Ferroelectric Polymer-Gated Perovskite Manganite Films with Moderate Gate Pulse Chains. ACS Appl Mater Interfaces 2020; 12:56541-56548. [PMID: 33283518 DOI: 10.1021/acsami.0c14172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Most previous attempts on achieving electric-field manipulation of ferromagnetism in complex oxides, such as La0.66Sr0.33MnO3 (LSMO), are based on electrostatically induced charge carrier changes through high-k dielectrics or ferroelectrics. Here, the use of a ferroelectric copolymer, polyvinylidene fluoride with trifluoroethylene [P(VDF-TrFE)], as a gate dielectric to successfully modulate the ferromagnetism of the LSMO thin film in a field-effect device geometry is demonstrated. Specifically, through the application of low-voltage pulse chains inadequate to switch the electric dipoles of the copolymer, enhanced tunability of the oxide magnetic response is obtained, compared to that induced by ferroelectric polarization. Such observations have been attributed to electric field-induced oxygen vacancy accumulation/depletion in the LSMO layer upon the application of pulse chains, which is supported by surface-sensitive-characterization techniques, including X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. These techniques not only unveil the electrochemical nature of the mechanism but also establish a direct correlation between the oxygen vacancies created and subsequent changes to the valence states of Mn ions in LSMO. These demonstrations based on the pulsing strategy can be a viable route equally applicable to other functional oxides for the construction of electric field-controlled magnetic devices.
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Affiliation(s)
- Hon Fai Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Sheung Mei Ng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Wen Zhang
- School of Electronics and Information and School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, Shaanxi 710072, China
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Yu Kuai Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Ping Kwan Johnny Wong
- School of Electronics and Information and School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, Shaanxi 710072, China
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Chi Sin Tang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Ka Kin Lam
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Xu Wen Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Zhen Gong Meng
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen 518060, China
| | - Lin Feng Fei
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Wang Fai Cheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Danny von Nordheim
- Department of SciTec, University of Applied Sciences Jena, Carl-Zeiss-Promenade 2, 07743 Jena, Germany
| | - Wai Yeung Wong
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Zong Rong Wang
- State Key Lab of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Bernd Ploss
- Department of SciTec, University of Applied Sciences Jena, Carl-Zeiss-Promenade 2, 07743 Jena, Germany
| | - Ji-Yan Dai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Chee Leung Mak
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Andrew Thye Shen Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Chi Wah Leung
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
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18
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Miao N, Li W, Zhu L, Xu B, Zhou J, Elliott SR, Sun Z. Tunable phase transitions and high photovoltaic performance of two-dimensional In 2Ge 2Te 6 semiconductors. Nanoscale Horiz 2020; 5:1566-1573. [PMID: 33073287 DOI: 10.1039/d0nh00395f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ultrathin semiconductors with great electrical and photovoltaic performance hold tremendous promise for fundamental research and applications in next-generation electronic devices. Here, we report new 2D direct-bandgap semiconductors, namely mono- and few-layer In2Ge2Te6, with a range of desired properties from ab initio simulations. We suggest that 2D In2Ge2Te6 samples should be highly stable and can be experimentally fabricated by mechanical exfoliation. They are predicted to exhibit extraordinary optical absorption and high photovoltaic conversion efficiency (≥31.8%), comparable to the most efficient single-junction GaAs solar cell. We reveal that, thanks to the presence of van Hove singularities in the band structure, unusual quantum-phase transitions could be induced in monolayers via electrostatic doping. Furthermore, taking bilayer In2Ge2Te6 as a prototypical system, we demonstrate the application of van der Waals pressure as a promising strategy to tune the electronic and stacking property of 2D crystals. Our work creates exciting opportunities to explore various quantum phases and atomic stacking, as well as potential applications of 2D In2Ge2Te6 in future nanoelectronics.
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Affiliation(s)
- Naihua Miao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
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19
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Liu Y, Dini K, Tan Q, Liew T, Novoselov KS, Gao W. Electrically controllable router of interlayer excitons. Sci Adv 2020; 6:6/41/eaba1830. [PMID: 33028515 PMCID: PMC7541059 DOI: 10.1126/sciadv.aba1830] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2019] [Accepted: 08/19/2020] [Indexed: 05/24/2023]
Abstract
Optoelectronic devices that allow rerouting, modulation, and detection of the optical signals would be extremely beneficial for telecommunication technology. One of the most promising platforms for these devices is excitonic devices, as they offer very efficient coupling to light. Of especial importance are those based on indirect excitons because of their long lifetime. Here, we demonstrate excitonic transistor and router based on bilayer WSe2 Because of their strong dipole moment, excitons in bilayer WSe2 can be controlled by transverse electric field. At the same time, unlike indirect excitons in artificially stacked heterostructures based on transition metal dichalcogenides, naturally stacked bilayers are much simpler in fabrication.
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Affiliation(s)
- Yuanda Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore
| | - Kévin Dini
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Qinghai Tan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Timothy Liew
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Kostya S Novoselov
- Department of Material Science and Engineering, National University of Singapore, 117575, Singapore.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore
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20
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Affiliation(s)
- Sergei V Kalinin
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA.
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21
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Yin R, Ma L, Wang Z, Ma C, Chen X, Wang B. Reversible Superconductor-Insulator Transition in (Li, Fe)OHFeSe Flakes Visualized by Gate-Tunable Scanning Tunneling Spectroscopy. ACS Nano 2020; 14:7513-7519. [PMID: 32510920 DOI: 10.1021/acsnano.0c03289] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Electric field control of charge carrier density provides a key in situ technology to continuously tune the ground states and map out the phase diagram of correlated electron systems in one device. This technique is highly expected to be combined with the modern state-of-the art spectroscopic probes, such as angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy (STM/S), to efficiently address these states and the underlying physics. However, it is extremely difficult and not successful so far, mainly because the fabrication process of such devices makes them prohibitive for surface probes. Here, by using a solid Li-ion conductor (SIC) as gate dielectric, we have successfully developed gate-tunable STM/S and visualized the superconductor-insulator transition (SIT) in a thin flake of single crystal (Li, Fe)OHFeSe at the nanoscale. The gate-controlled Li-ion injection first enhances the superconductivity and then drives the flake into an inhomogeneous insulating state, where superconductivity is totally suppressed. This process can be reversed by applying an opposite gate voltage. Importantly, the atomically resolved images allow us to identify the critical role that the injected Li ions play in the tuning process. Our results not only provide clear evidence of the microscopic mechanism of the tunable superconductivity and SIT in the SIC-based (Li, Fe)OHFeSe devices, but also establish SIC-gating STM as a powerful tool for investigating the complicated phase diagram of correlated electron system spectroscopically in a single sample with the field-effect approach.
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Affiliation(s)
- Ruoting Yin
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Likuan Ma
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Physics, and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zhenyu Wang
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Physics, and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Chuanxu Ma
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xianhui Chen
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Physics, and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, Hefei, Anhui 230026, China
| | - Bing Wang
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, Hefei, Anhui 230026, China
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22
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Qin H, Guo B, Wang L, Zhang M, Xu B, Shi K, Pan T, Zhou L, Chen J, Qiu Y, Xi B, Sou IK, Yu D, Chen WQ, He H, Ye F, Mei JW, Wang G. Superconductivity in Single-Quintuple-Layer Bi 2Te 3 Grown on Epitaxial FeTe. Nano Lett 2020; 20:3160-3168. [PMID: 32207627 DOI: 10.1021/acs.nanolett.9b05167] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
How an interfacial superconductivity emerges during the nucleation and epitaxy is of great importance not only for unveiling the physical insights but also for finding a feasible way to tune the superconductivity via interfacial engineering. In this work, we report the nanoscale creation of a robust and relatively homogeneous interfacial superconductivity (TC ≈ 13 K) on the epitaxial FeTe surface, by van der Waals epitaxy of single-quintuple-layer topological insulator Bi2Te3. Our study suggests that the superconductivity in the Bi2Te3/FeTe heterostructure is generated at the interface and that the superconductivity at the interface does not enhance or weaken with the increase of the Bi2Te3 thickness beyond 1 quintuple layer (QL). The observation of the topological surface states crossing Fermi energy in the Bi2Te3/FeTe heterostructure with the average Bi2Te3 thickness of about 20 QL provides further evidence that this heterostructure may potentially host Majorana zero modes.
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Affiliation(s)
- Hailang Qin
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Bin Guo
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Linjing Wang
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Meng Zhang
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Bochao Xu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Kaige Shi
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Tianluo Pan
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Liang Zhou
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Junshu Chen
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yang Qiu
- Materials Characterization and Preparation Center, Southern University of Science and Technology, Shenzhen 518055, China
| | - Bin Xi
- School of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China
| | - Iam Keong Sou
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Wei-Qiang Chen
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Hongtao He
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Fei Ye
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jia-Wei Mei
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Gan Wang
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
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23
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Yan H, Feng Z, Qin P, Zhou X, Guo H, Wang X, Chen H, Zhang X, Wu H, Jiang C, Liu Z. Electric-Field-Controlled Antiferromagnetic Spintronic Devices. Adv Mater 2020; 32:e1905603. [PMID: 32048366 DOI: 10.1002/adma.201905603] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2019] [Revised: 11/21/2019] [Indexed: 06/10/2023]
Abstract
In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach for achieving ultralow power spintronic devices via suppressing Joule heating. Here, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, is comprehensively reviewed. Various emergent topics such as the Néel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, 2D magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons is highlighted. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.
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Affiliation(s)
- Han Yan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zexin Feng
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Peixin Qin
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaorong Zhou
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Huixin Guo
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaoning Wang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Hongyu Chen
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xin Zhang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Haojiang Wu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Chengbao Jiang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhiqi Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
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24
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Rouco V, Hage RE, Sander A, Grandal J, Seurre K, Palermo X, Briatico J, Collin S, Trastoy J, Bouzehouane K, Buzdin AI, Singh G, Bergeal N, Feuillet-Palma C, Lesueur J, Leon C, Varela M, Santamaría J, Villegas JE. Quasiparticle tunnel electroresistance in superconducting junctions. Nat Commun 2020; 11:658. [PMID: 32005810 PMCID: PMC6994500 DOI: 10.1038/s41467-020-14379-w] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2019] [Accepted: 12/30/2019] [Indexed: 11/13/2022] Open
Abstract
The term tunnel electroresistance (TER) denotes a fast, non-volatile, reversible resistance switching triggered by voltage pulses in ferroelectric tunnel junctions. It is explained by subtle mechanisms connected to the voltage-induced reversal of the ferroelectric polarization. Here we demonstrate that effects functionally indistinguishable from the TER can be produced in a simpler junction scheme—a direct contact between a metal and an oxide—through a different mechanism: a reversible redox reaction that modifies the oxide’s ground-state. This is shown in junctions based on a cuprate superconductor, whose ground-state is sensitive to the oxygen stoichiometry and can be tracked in operando via changes in the conductance spectra. Furthermore, we find that electrochemistry is the governing mechanism even if a ferroelectric is placed between the metal and the oxide. Finally, we extend the concept of electroresistance to the tunnelling of superconducting quasiparticles, for which the switching effects are much stronger than for normal electrons. Besides providing crucial understanding, our results provide a basis for non-volatile Josephson memory devices. The non-volatile switching of tunnel electroresistance in ferroelectric junctions provides the basis for memory and neuromorphic computing devices. Rouco et al. show tunnel electroresistance in superconductor-based junctions that arises from a redox rather than ferroelectric mechanism and is enhanced by superconductivity.
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Affiliation(s)
- V Rouco
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France.,Grupo de Física de Materiales Complejos, Dpto. Física de Materiales, Universidad Complutense de Madrid, 28040, Madrid, Spain
| | - R El Hage
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - A Sander
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - J Grandal
- Grupo de Física de Materiales Complejos, Dpto. Física de Materiales, Universidad Complutense de Madrid, 28040, Madrid, Spain
| | - K Seurre
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - X Palermo
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - J Briatico
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - S Collin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - J Trastoy
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - K Bouzehouane
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - A I Buzdin
- Université de Bordeaux, LOMA UMR CNRS 5798, F-33405, Talence, France
| | - G Singh
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, 75005, Paris, France
| | - N Bergeal
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, 75005, Paris, France
| | - C Feuillet-Palma
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, 75005, Paris, France
| | - J Lesueur
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, 75005, Paris, France
| | - C Leon
- Grupo de Física de Materiales Complejos, Dpto. Física de Materiales, Universidad Complutense de Madrid, 28040, Madrid, Spain
| | - M Varela
- Grupo de Física de Materiales Complejos, Dpto. Física de Materiales, Universidad Complutense de Madrid, 28040, Madrid, Spain
| | - J Santamaría
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France.,Grupo de Física de Materiales Complejos, Dpto. Física de Materiales, Universidad Complutense de Madrid, 28040, Madrid, Spain
| | - Javier E Villegas
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France.
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Guo Y, Sun X, Jiang J, Wang B, Chen X, Yin X, Qi W, Gao L, Zhang L, Lu Z, Jia R, Pendse S, Hu Y, Chen Z, Wertz E, Gall D, Feng J, Lu TM, Shi J. A Reconfigurable Remotely Epitaxial VO 2 Electrical Heterostructure. Nano Lett 2020; 20:33-42. [PMID: 31769995 DOI: 10.1021/acs.nanolett.9b02696] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The reconfigurability of the electrical heterostructure featured with external variables, such as temperature, voltage, and strain, enabled electronic/optical phase transition in functional layers has great potential for future photonics, computing, and adaptive circuits. VO2 has been regarded as an archetypal phase transition building block with superior metal-insulator transition characteristics. However, the reconfigurable VO2-based heterostructure and the associated devices are rare due to the fundamental challenge in integrating high-quality VO2 in technologically important substrates. In this report, for the first time, we show the remote epitaxy of VO2 and the demonstration of a vertical diode device in a graphene/epitaxial VO2/single-crystalline BN/graphite structure with VO2 as a reconfigurable phase-change material and hexagonal boron nitride (h-BN) as an insulating layer. By diffraction and electrical transport studies, we show that the remote epitaxial VO2 films exhibit higher structural and electrical quality than direct epitaxial ones. By high-resolution transmission electron microscopy and Cs-corrected scanning transmission electron microscopy, we show that a graphene buffered substrate leads to a less strained VO2 film than the bare substrate. In the reconfigurable diode, we find that the Fermi level change and spectral weight shift along with the metal-insulator transition of VO2 could modify the transport characteristics. The work suggests the feasibility of developing a single-crystalline VO2-based reconfigurable heterostructure with arbitrary substrates and sheds light on designing novel adaptive photonics and electrical devices and circuits.
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Affiliation(s)
- Yuwei Guo
- Department of Materials Science and Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Xin Sun
- Department of Physics, Applied Physics, and Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Jie Jiang
- Department of Materials Science and Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
- Faculty of Material Science and Engineering , Kunming University of Science and Technology , Kunming 650093 , China
| | - Baiwei Wang
- Department of Materials Science and Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Xinchun Chen
- State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
| | - Xuan Yin
- State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
| | - Wei Qi
- State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
| | - Lei Gao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology , University of Science and Technology Beijing , Beijing , 100083 , China
| | - Lifu Zhang
- Department of Materials Science and Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Zonghuan Lu
- Department of Physics, Applied Physics, and Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Ru Jia
- Department of Materials Science and Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Saloni Pendse
- Department of Materials Science and Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Yang Hu
- Department of Materials Science and Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
- Department of Physics, Applied Physics, and Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Zhizhong Chen
- Department of Materials Science and Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Esther Wertz
- Department of Physics, Applied Physics, and Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Daniel Gall
- Department of Materials Science and Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Jing Feng
- Faculty of Material Science and Engineering , Kunming University of Science and Technology , Kunming 650093 , China
| | - Toh-Ming Lu
- Department of Physics, Applied Physics, and Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Jian Shi
- Department of Materials Science and Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
- Center for Materials, Devices, and Integrated Systems , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
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26
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Serrano-Sánchez F, Fauth F, Martínez JL, Alonso JA. Experimental Observation of Monoclinic Distortion in the Insulating Regime of SmNiO3 by Synchrotron X-ray Diffraction. Inorg Chem 2019; 58:11828-11835. [DOI: 10.1021/acs.inorgchem.9b02013] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Federico Serrano-Sánchez
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Sor Juana Inés de la Cruz 3, E-28049, Madrid, Spain
| | - François Fauth
- CELLS−ALBA Synchrotron, Cerdanyola del Valles, E-08290 Barcelona, Spain
| | - José Luis Martínez
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Sor Juana Inés de la Cruz 3, E-28049, Madrid, Spain
| | - José Antonio Alonso
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Sor Juana Inés de la Cruz 3, E-28049, Madrid, Spain
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27
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Lin W, Li L, Doğan F, Li C, Rotella H, Yu X, Zhang B, Li Y, Lew WS, Wang S, Prellier W, Pennycook SJ, Chen J, Zhong Z, Manchon A, Wu T. Interface-based tuning of Rashba spin-orbit interaction in asymmetric oxide heterostructures with 3d electrons. Nat Commun 2019; 10:3052. [PMID: 31296861 DOI: 10.1038/s41467-019-10961-z] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/25/2018] [Accepted: 06/07/2019] [Indexed: 11/08/2022] Open
Abstract
The Rashba effect plays important roles in emerging quantum materials physics and potential spintronic applications, entailing both the spin orbit interaction (SOI) and broken inversion symmetry. In this work, we devise asymmetric oxide heterostructures of LaAlO3//SrTiO3/LaAlO3 (LAO//STO/LAO) to study the Rashba effect in STO with an initial centrosymmetric structure, and broken inversion symmetry is created by the inequivalent bottom and top interfaces due to their opposite polar discontinuities. Furthermore, we report the observation of a transition from the cubic Rashba effect to the coexistence of linear and cubic Rashba effects in the oxide heterostructures, which is controlled by the filling of Ti orbitals. Such asymmetric oxide heterostructures with initially centrosymmetric materials provide a general strategy for tuning the Rashba SOI in artificial quantum materials. The two-dimensional electron gases that form at LaAlO3/SrTiO3 heterostructure interfaces feature strong spin-orbit interactions, leading to proposed spintronic applications. Lin et al. show that the design of asymmetric heterostructures enables the Rashba spin-orbit interaction to be tuned between two regimes.
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28
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Pavlov DP, Zagidullin RR, Mukhortov VM, Kabanov VV, Adachi T, Kawamata T, Koike Y, Mamin RF. Fabrication of High-Temperature Quasi-Two-Dimensional Superconductors at the Interface of a Ferroelectric Ba_{0.8}Sr_{0.2}TiO_{3} Film and an Insulating Parent Compound of La_{2}CuO_{4}. Phys Rev Lett 2019; 122:237001. [PMID: 31298885 DOI: 10.1103/physrevlett.122.237001] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2018] [Revised: 01/29/2019] [Indexed: 06/10/2023]
Abstract
We report the first observation of superconductivity in a heterostructure consisting of an insulating ferroelectric film (Ba_{0.8}Sr_{0.2}TiO_{3}) grown on an insulating parent compound of La_{2}CuO_{4} with [001] orientation. The heterostructure was prepared by magnetron sputtering on a nonatomically flat surface with inhomogeneities of the order of 1-2 nm. The measured superconducting transition temperature T_{c} is about 30 K. We have shown that superconductivity is confined near the interface region. Application of a weak magnetic field perpendicular to the interface leads to the appearance of the finite resistance. That confirms the quasi-two-dimensional nature of the superconductive state. The proposed concept promises ferroelectrically controlled interface superconductivity which offers the possibility of novel design of electronic devices.
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Affiliation(s)
- Dmitrii P Pavlov
- Zavoisky Physical-Technical Institute, FRC KazanSC of RAS, 420029 Kazan, Russia
| | - Rustem R Zagidullin
- Zavoisky Physical-Technical Institute, FRC KazanSC of RAS, 420029 Kazan, Russia
| | | | - Viktor V Kabanov
- Zavoisky Physical-Technical Institute, FRC KazanSC of RAS, 420029 Kazan, Russia
- Department for Complex Matter, Jozef Stefan Institute, 1000 Ljubljana, Slovenia
| | - Tadashi Adachi
- Department of Engineering and Applied Sciences, Sophia University, 102-8554 Tokyo, Japan
| | - Takayuki Kawamata
- Department of Applied Physics, Tohoku University, 980-8579 Sendai, Japan
| | - Yoji Koike
- Department of Applied Physics, Tohoku University, 980-8579 Sendai, Japan
| | - Rinat F Mamin
- Zavoisky Physical-Technical Institute, FRC KazanSC of RAS, 420029 Kazan, Russia
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29
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Molinari A, Hahn H, Kruk R. Voltage-Control of Magnetism in All-Solid-State and Solid/Liquid Magnetoelectric Composites. Adv Mater 2019; 31:e1806662. [PMID: 30785649 DOI: 10.1002/adma.201806662] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2018] [Revised: 12/20/2018] [Indexed: 06/09/2023]
Abstract
The control of magnetism by means of low-power electric fields, rather than dissipative flowing currents, has the potential to revolutionize conventional methods of data storage and processing, sensing, and actuation. A promising strategy relies on the utilization of magnetoelectric composites to finely tune the interplay between electric and magnetic degrees of freedom at the interface of two functional materials. Albeit early works predominantly focused on the magnetoelectric coupling at solid/solid interfaces; however, recently there has been an increased interest related to the opportunities offered by liquid-gating techniques. Here, a comparative overview on voltage control of magnetism in all-solid-state and solid/liquid composites is presented within the context of the principal coupling mediators, i.e., strain, charge carrier doping, and ionic intercalation. Further, an exhaustive and critical discussion is carried out, concerning the suitability of using the common definition of coupling coefficient α C = Δ M Δ E to compare the strength of the interaction between electricity and magnetism among different magnetoelectric systems.
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Affiliation(s)
- Alan Molinari
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Horst Hahn
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
- KIT-TUD-Joint Research Laboratory Nanomaterials, Technical University Darmstadt, Jovanka-Bontschits-Strasse 2, 64287, Darmstadt, Germany
| | - Robert Kruk
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
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30
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Giorgianni F, Sakai J, Lupi S. Overcoming the thermal regime for the electric-field driven Mott transition in vanadium sesquioxide. Nat Commun 2019; 10:1159. [PMID: 30858368 DOI: 10.1038/s41467-019-09137-6] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/23/2018] [Accepted: 02/13/2019] [Indexed: 11/28/2022] Open
Abstract
The complex interplay among electronic, magnetic and lattice degrees of freedom in Mott-Hubbard materials leads to different types of insulator-to-metal transitions (IMT) which can be triggered by temperature, pressure, light irradiation and electric field. However, several questions remain open concerning the quantum or thermal nature of electric field-driven transition process. Here, using intense terahertz pulses, we reveal the emergence of an instantaneous purely-electronic IMT in the Mott-Hubbard vanadium sequioxide (V2O3) prototype material. While fast electronics allow thermal-driven transition involving Joule heating, which takes place after tens of picoseconds, terahertz electric field is able to induce a sub-picosecond electronic switching. We provide a comprehensive study of the THz induced Mott transition, showing a crossover from a fast quantum dynamics to a slower thermal dissipative evolution for increasing temperature. Strong-field terahertz-driven electronic transition paves the way to ultrafast electronic switches and high-harmonic generation in correlated systems. Thermal effects limit the speed of the electrically driven insulator-metal transition in V2O3 to tens of picoseconds. Here the authors show that under an intense THz-electric-field excitation the thermal regime can be overcome, achieving a purely electronic transition on ultrafast timescales.
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31
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Abstract
The use of electrolyte gating to electrically control electronic, magnetic and optical properties of materials has seen strong recent growth, driven by the potential of the many devices and applications that such control may enable. Contrary to initial expectations of a purely electrostatic response based on electron or hole doping, electrochemical mechanisms based on the motion of ions are now understood to be common, suggesting promising new electrical control concepts.
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Affiliation(s)
- Chris Leighton
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA.
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32
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33
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Kuang H, Wang J, Li J, Qiao K, Liu Y, Hu F, Sun J, Shen B. Enhanced Field Modulation Sensitivity and Anomalous Polarity-Dependency Emerged in Spatial-Confined Manganite Strips. ACS Appl Mater Interfaces 2018; 10:32597-32606. [PMID: 30175581 DOI: 10.1021/acsami.8b10915] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
An anomalous polarity-dependent electrostatic field modulation effect, facilitated by spatial confinement, is found in an oxide-based field-effect prototype device with a spatial-confined Pr0.7(Ca0.6Sr0.4)0.3MnO3 channel. It is revealed that the dominant field modulation mode under a small bias field varies from a polarity-independent strain-mediated one to a nonvolatile polarity-dependent one with enhanced modulation sensitivity as the channel width narrows down to several micrometers. Specially, in the structure confined to length scales similar to that of the phase domains, the field modulation exhibits a greatly increased modulation amplitude around the transition temperature and an anomalous bias-polarity dependence that is diametrically opposite to the normal one observed in regular polarization field-effect. Further simulations show that a large in-plane polarization field is unexpectedly induced by a small out-of-plane bias field of 4 kV/cm in the narrow strip (up to 790 kV/cm for the 3 μm strip). Such large in-plane polarization field, facilitated and enhanced by size reduction, drives phase transitions in the narrow channel film, leading to the reconfiguration of percolation channel and nonvolatile modulation of transport properties. Accordingly, the accompanied polarity relationship between the induced in-plane polarization field and the applied vertical bias field well explains the observed anomalous polarity-dependence of the modulation. Our studies reveal a new acting channel in the nanoscale control of lateral configurations of electronic phase separation and macroscopic behaviors by a small vertical electric bias field in spatial-confined field-effect structures. This distinct acting mechanism offers new possibilities for designing low-power all-oxide-based electronic devices and exploiting new types of multifunctionality to other strongly correlated materials where electronic phase competition exists.
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Affiliation(s)
- Hao Kuang
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Jing Wang
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Jia Li
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Kaiming Qiao
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Yao Liu
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
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34
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Palau A, Fernandez-Rodriguez A, Gonzalez-Rosillo JC, Granados X, Coll M, Bozzo B, Ortega-Hernandez R, Suñé J, Mestres N, Obradors X, Puig T. Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films. ACS Appl Mater Interfaces 2018; 10:30522-30531. [PMID: 30109805 PMCID: PMC6348441 DOI: 10.1021/acsami.8b08042] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/16/2018] [Accepted: 08/15/2018] [Indexed: 06/08/2023]
Abstract
Modulation of carrier concentration in strongly correlated oxides offers the unique opportunity to induce different phases in the same material, which dramatically change their physical properties, providing novel concepts in oxide electronic devices with engineered functionalities. This work reports on the electric manipulation of the superconducting to insulator phase transition in YBa2Cu3O7-δ thin films by electrochemical oxygen doping. Both normal state resistance and the superconducting critical temperature can be reversibly manipulated in confined active volumes of the film by gate-tunable oxygen diffusion. Vertical and lateral oxygen mobility may be finely modulated, at the micro- and nano-scale, by tuning the applied bias voltage and operating temperature thus providing the basis for the design of homogeneous and flexible transistor-like devices with loss-less superconducting drain-source channels. We analyze the experimental results in light of a theoretical model, which incorporates thermally activated and electrically driven volume oxygen diffusion.
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Affiliation(s)
- Anna Palau
- Institut de Ciència
de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | | | | | - Xavier Granados
- Institut de Ciència
de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - Mariona Coll
- Institut de Ciència
de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - Bernat Bozzo
- Institut de Ciència
de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - Rafael Ortega-Hernandez
- Institut de Ciència
de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
- Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
| | - Jordi Suñé
- Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
| | - Narcís Mestres
- Institut de Ciència
de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - Xavier Obradors
- Institut de Ciència
de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - Teresa Puig
- Institut de Ciència
de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
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35
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Affiliation(s)
- Chinedu E. Ekuma
- U.S. Army Research Laboratory Aberdeen Proving Ground MD 21005‐5069 USA
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36
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Mattoni G, de Jong B, Manca N, Tomellini M, Caviglia AD. Single-Crystal Pt-Decorated WO 3 Ultrathin Films: A Platform for Sub-ppm Hydrogen Sensing at Room Temperature. ACS Appl Nano Mater 2018; 1:3446-3452. [PMID: 30087952 PMCID: PMC6066757 DOI: 10.1021/acsanm.8b00627] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2018] [Accepted: 06/19/2018] [Indexed: 05/11/2023]
Abstract
Hydrogen-related technologies are rapidly developing, driven by the necessity of efficient and high-density energy storage. This poses new challenges to the detection of dangerous gases, in particular the realization of cheap, sensitive, and fast hydrogen sensors. Several materials are being studied for this application, but most present critical bottlenecks, such as high operational temperature, low sensitivity, slow response time, and/or complex fabrication procedures. Here, we demonstrate that WO3 in the form of single-crystal, ultrathin films with a Pt catalyst allows high-performance sensing of H2 gas at room temperature. Thanks to the high electrical resistance in the pristine state, this material is able to detect hydrogen concentrations down to 1 ppm near room temperature. Moreover, the high surface-to-volume ratio of WO3 ultrathin films determines fast sensor response and recovery, with characteristic times as low as 1 s when the concentration exceeds 100 ppm. By modeling the hydrogen (de)intercalation dynamics with a kinetic model, we extract the energy barriers of the relevant processes and relate the doping mechanism to the formation of oxygen vacancies. Our results reveal the potential of single-crystal WO3 ultrathin films toward the development of sub-ppm hydrogen detectors working at room temperature.
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Affiliation(s)
- Giordano Mattoni
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2628 CJ Delft, The Netherlands
- E-mail: (G.M.)
| | - Bas de Jong
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2628 CJ Delft, The Netherlands
| | - Nicola Manca
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2628 CJ Delft, The Netherlands
| | - Massimo Tomellini
- Dipartimento
di Scienze e Tecnologie Chimiche, Università
di Roma Tor Vergata, via della Ricerca Scientifica 1, 00133 Roma, Italy
| | - Andrea D. Caviglia
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2628 CJ Delft, The Netherlands
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37
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Scheiderer P, Schmitt M, Gabel J, Zapf M, Stübinger M, Schütz P, Dudy L, Schlueter C, Lee TL, Sing M, Claessen R. Tailoring Materials for Mottronics: Excess Oxygen Doping of a Prototypical Mott Insulator. Adv Mater 2018; 30:e1706708. [PMID: 29732633 DOI: 10.1002/adma.201706708] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2017] [Revised: 02/02/2018] [Indexed: 06/08/2023]
Abstract
The Mott transistor is a paradigm for a new class of electronic devices-often referred to by the term Mottronics-which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal-insulator transition to be switched by electric gating. Here, it is demonstrated that thin films of the prototypical Mott insulator LaTiO3 grown by pulsed laser deposition under oxygen atmosphere are readily tuned by excess oxygen doping across the line of the band-filling controlled Mott transition in the electronic phase diagram. The detected insulator to metal transition is characterized by a strong change in resistivity of several orders of magnitude. The use of suitable substrates and capping layers to inhibit oxygen diffusion facilitates full control of the oxygen content and renders the films stable against exposure to ambient conditions. These achievements represent a significant advancement in control and tuning of the electronic properties of LaTiO3+x thin films making it a promising channel material in future Mottronic devices.
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Affiliation(s)
- Philipp Scheiderer
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Matthias Schmitt
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Judith Gabel
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Michael Zapf
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Martin Stübinger
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Philipp Schütz
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Lenart Dudy
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | | | - Tien-Lin Lee
- Diamond Light Source Ltd., Didcot, Oxfordshire, OX11 0DE, UK
| | - Michael Sing
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
| | - Ralph Claessen
- Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany
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38
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Qin F, Ideue T, Shi W, Zhang Y, Suzuki R, Yoshida M, Saito Y, Iwasa Y. Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating. J Vis Exp 2018:56862. [PMID: 29708534 PMCID: PMC5933487 DOI: 10.3791/56862] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/31/2022] Open
Abstract
A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape method or individual WS2 nanotubes by dispersing the suspension of WS2 nanotubes. The selected samples have been fabricated into devices by the use of the electron beam lithography and electrolyte is put on the devices. We have characterized the electronic properties of the devices under applying the gate voltage. In the small gate voltage region, ions in the electrolyte are accumulated on the surface of the samples which leads to the large electric potential drop and resultant electrostatic carrier doping at the interface. Ambipolar transfer curve has been observed in this electrostatic doping region. When the gate voltage is further increased, we met another drastic increase of source-drain current which implies that ions are intercalated into layers of WS2 and electrochemical carrier doping is realized. In such electrochemical doping region, superconductivity has been observed. The focused technique provides a powerful strategy for achieving the electric-filed-induced quantum phase transition.
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Affiliation(s)
- Feng Qin
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo
| | - Toshiya Ideue
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo;
| | - Wu Shi
- Materials Sciences Division, Lawrence Berkeley National Laboratory
| | - Yijin Zhang
- Institute of Scientific and Industrial Research, Osaka University; Max Planck Institute for Solid State Research
| | - Ryuji Suzuki
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo
| | | | - Yu Saito
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo
| | - Yoshihiro Iwasa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo; RIKEN Center for Emergent Matter Science (CEMS)
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39
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Abstract
The ultimate challenge for the development of new multiferroics with enhanced properties lies in achieving nanoscale control of the coupling between different ordering parameters. In oxide-based multiferroics, substitutional cation dopants offer the unparalleled possibility to modify both the electric and magnetic properties at a local scale. Herein it is demonstrated the formation of a dopant-controlled polar pattern in BiFeO3 leading to the spontaneous instauration of periodic polarization waves. In particular, nonpolar Ca-doped rich regions act as spacers between consecutive dopant-depleted regions displaying coupled ferroelectric states. This alternation of layers with different ferroelectric state creates a novel vertical polar structure exhibiting giant polarization gradients as large as 70 μC cm-2 across 30 Å thick domains. The drastic change in the polar state of the film is visualized using high-resolution differential phase-contrast imaging able to map changes in ferroelectric polarization at atomic scale. Furthermore, a periodic distortion in the Fe-O-Fe bonding angle suggests a local variation in the magnetic ordering. The findings provide a new insight into the role of doping and reveal hitherto unexplored means to tailor the functional properties of multiferroics by doping engineering.
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Affiliation(s)
- Marco Campanini
- Electron Microscopy Center, Empa , Überlandstrasse 129, Dübendorf 8600, Switzerland
| | - Rolf Erni
- Electron Microscopy Center, Empa , Überlandstrasse 129, Dübendorf 8600, Switzerland
| | - Chan Ho Yang
- Department of Physics, KAIST , Daejeon 305-701, Republic of Korea
| | - Ramamoorthy Ramesh
- Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | - Marta D Rossell
- Electron Microscopy Center, Empa , Überlandstrasse 129, Dübendorf 8600, Switzerland
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40
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Abstract
The conventional linear response overestimates the U in DFT+U calculations for solids with fully occupied orbitals. Here, we demonstrate that the challenge arises from the incomplete cancellation of the electron-electron Coulomb repulsion energy under external perturbation. We applied the second charge response, denoted as the "pseudo-charge" model, to offset such residue effects. Counteracting between these two charge response-induced Coulomb potentials, the U parameters are self-consistently obtained by fulfilling the conditions for minimizing the non-Koopmans energy. Moreover, the pseudo-charge-induced repulsive potential shows a screening behavior related to the orbital occupation and is potentially in compliance with the screened exact exchange-correlation of electrons. The resultant U parameters are self-consistent solutions for improved band structure calculations by the DFT+U method. This work extends the validity of the linear response method to both partially and fully occupied orbitals and gives a reference for estimating the Hubbard U parameter prior to other advanced methods. The U parameters were determined in a transferability test using both PBE and hybrid density functional methods, and the results showed that this method is independent of the functional. The electronic structures determined from the hybrid-DFT+Uhybrid approach are provided. Comparisons are also made with the recently developed self-consistent hybrid-DFT+Uw method.
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Affiliation(s)
- Bolong Huang
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China.
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41
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Malashevich A, Marshall MSJ, Visani C, Disa AS, Xu H, Walker FJ, Ahn CH, Ismail-Beigi S. Controlling Mobility in Perovskite Oxides by Ferroelectric Modulation of Atomic-Scale Interface Structure. Nano Lett 2018; 18:573-578. [PMID: 29251937 DOI: 10.1021/acs.nanolett.7b04715] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Coherent and epitaxial interfaces permit the realization of electric field driven devices controlled by atomic-scale structural and electronic effects at interfaces. Compared to conventional field effect devices where channel conductivity is modulated by carrier density modification, the propagation of atomic-scale distortions across an interface can control the atomic scale bonding, interatomic electron tunneling rates and thus the mobility of the channel material. We use first-principles theory to design an atomically abrupt epitaxial perovskite heterostructure involving an oxide ferroelectric (PbZr0.2Ti0.8O3) and conducting oxide channel (LaNiO3) where coupling of polar atomic motions to structural distortions can induce large, reversible changes in the channel mobility. We fabricate and characterize the heterostructure and measure record values, larger than 1000%, for the conductivity modulation. Our results describe how purely interfacial effects can be engineered to deliver unique electronic device properties and large responses to external fields.
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Affiliation(s)
- Andrei Malashevich
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
| | - Matthew S J Marshall
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
| | - Cristina Visani
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
| | - Ankit S Disa
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
| | - Haichao Xu
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
- Advanced Materials Laboratory, Fudan University , Shanghai 200433, People's Republic of China
| | - Frederick J Walker
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
| | - Charles H Ahn
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
- Department of Mechanical Engineering and Materials Science, Yale University , New Haven, Connecticut 06520, United States
- Department of Physics, Yale University , New Haven, Connecticut 06520, United States
| | - Sohrab Ismail-Beigi
- Center for Research on Interface Structures and Phenomena (CRISP), Yale University , New Haven, Connecticut 06520, United States
- Department of Applied Physics, Yale University , New Haven, Connecticut 06520, United States
- Department of Mechanical Engineering and Materials Science, Yale University , New Haven, Connecticut 06520, United States
- Department of Physics, Yale University , New Haven, Connecticut 06520, United States
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42
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Wei T, Kanki T, Chikanari M, Uemura T, Sekitani T, Tanaka H. Enhanced electronic-transport modulation in single-crystalline VO 2 nanowire-based solid-state field-effect transistors. Sci Rep 2017; 7:17215. [PMID: 29222452 PMCID: PMC5722937 DOI: 10.1038/s41598-017-17468-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/18/2017] [Accepted: 11/27/2017] [Indexed: 11/09/2022] Open
Abstract
Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport switching in a correlated electron material, i.e., a VO2 nanowire channel through a hybrid gate, which showed an enhancement in the resistive modulation efficiency accompanied by expansion of metallic nano-domains in an insulating matrix by applying gate biases near the metal-insulator transition temperature. Our results offer an understanding of the innate ability of coexistence state of metallic and insulating domains in correlated materials through carrier tuning and serve as a valuable reference for further research into the development of correlated materials and their devices.
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Affiliation(s)
- Tingting Wei
- Institute of Scientific and Industrial Research, Osaka Universit, Ibaraki, Osaka, 567-0047, Japan.,Faculty of Science, Kunming University of Science and Technology, Kunming, 650093, China
| | - Teruo Kanki
- Institute of Scientific and Industrial Research, Osaka Universit, Ibaraki, Osaka, 567-0047, Japan.
| | - Masashi Chikanari
- Institute of Scientific and Industrial Research, Osaka Universit, Ibaraki, Osaka, 567-0047, Japan
| | - Takafumi Uemura
- Institute of Scientific and Industrial Research, Osaka Universit, Ibaraki, Osaka, 567-0047, Japan
| | - Tsuyoshi Sekitani
- Institute of Scientific and Industrial Research, Osaka Universit, Ibaraki, Osaka, 567-0047, Japan
| | - Hidekazu Tanaka
- Institute of Scientific and Industrial Research, Osaka Universit, Ibaraki, Osaka, 567-0047, Japan.
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43
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Lin YH, Pattanasattayavong P, Anthopoulos TD. Metal-Halide Perovskite Transistors for Printed Electronics: Challenges and Opportunities. Adv Mater 2017; 29. [PMID: 29024040 DOI: 10.1002/adma.201702838] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2017] [Revised: 07/31/2017] [Indexed: 05/12/2023]
Abstract
Following the unprecedented rise in photovoltaic power conversion efficiencies during the past five years, metal-halide perovskites (MHPs) have emerged as a new and highly promising class of solar-energy materials. Their extraordinary electrical and optical properties combined with the abundance of the raw materials, the simplicity of synthetic routes, and processing versatility make MHPs ideal for cost-efficient, large-volume manufacturing of a plethora of optoelectronic devices that span far beyond photovoltaics. Herein looks beyond current applications in the field of energy, to the area of large-area electronics using MHPs as the semiconductor material. A comprehensive overview of the relevant fundamental material properties of MHPs, including crystal structure, electronic states, and charge transport, is provided first. Thereafter, recent demonstrations of MHP-based thin-film transistors and their application in logic circuits, as well as bi-functional devices such as light-sensing and light-emitting transistors, are discussed. Finally, the challenges and opportunities in the area of MHPs-based electronics, with particular emphasis on manufacturing, stability, and health and environmental concerns, are highlighted.
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Affiliation(s)
- Yen-Hung Lin
- Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, UK
| | - Pichaya Pattanasattayavong
- Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology (VISTEC), Rayong, 21210, Thailand
| | - Thomas D Anthopoulos
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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44
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Zhang L, Zeng S, Yin X, Asmara TC, Yang P, Han K, Cao Y, Zhou W, Wan D, Tang CS, Rusydi A, Venkatesan T. The Mechanism of Electrolyte Gating on High-T c Cuprates: The Role of Oxygen Migration and Electrostatics. ACS Nano 2017; 11:9950-9956. [PMID: 28960953 DOI: 10.1021/acsnano.7b03978] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2, and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controversy about the gating mechanism, and it is therefore vital to reveal the relationship between the role of electrolyte gating and the intrinsic properties of materials. Here, we report entirely different mechanisms of electrolyte gating on two high-Tc cuprates, NdBa2Cu3O7-δ (NBCO) and Pr2-xCexCuO4 (PCCO), with different crystal structures. We show that field-induced oxygen vacancy formation in CuO chains of NBCO plays the dominant role, while it is mainly an electrostatic field effect in the case of PCCO. The possible reason is that NBCO has mobile oxygen in CuO chains, while PCCO does not. Our study helps clarify the controversy relating to the mechanism of electrolyte gating, leading to a better understanding of the role of oxygen electro migration which is very material specific.
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Affiliation(s)
- Lingchao Zhang
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
| | - Shengwei Zeng
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
| | - Xinmao Yin
- Department of Physics, National University of Singapore , Singapore 117551
- Singapore Synchrotron Light Source (SSLS), National University of Singapore , 5 Research Link, Singapore 117603
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University , Shenzhen, China 518060
| | - Teguh Citra Asmara
- Singapore Synchrotron Light Source (SSLS), National University of Singapore , 5 Research Link, Singapore 117603
| | - Ping Yang
- Singapore Synchrotron Light Source (SSLS), National University of Singapore , 5 Research Link, Singapore 117603
| | - Kun Han
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
| | - Yu Cao
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
| | - Wenxiong Zhou
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
| | - Dongyang Wan
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
| | - Chi Sin Tang
- Department of Physics, National University of Singapore , Singapore 117551
- Singapore Synchrotron Light Source (SSLS), National University of Singapore , 5 Research Link, Singapore 117603
- NUS Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore , Singapore 117456
| | - Andrivo Rusydi
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
- Singapore Synchrotron Light Source (SSLS), National University of Singapore , 5 Research Link, Singapore 117603
| | - Thirumalai Venkatesan
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
- NUS Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore , Singapore 117456
- Department of Electrical and Computer Engineering, National University of Singapore , Singapore 117576
- Department of Materials Science and Engineering, National University of Singapore , Singapore 117575
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45
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Li BW, Osada M, Kim YH, Ebina Y, Akatsuka K, Sasaki T. Atomic Layer Engineering of High-κ Ferroelectricity in 2D Perovskites. J Am Chem Soc 2017; 139:10868-10874. [DOI: 10.1021/jacs.7b05665] [Citation(s) in RCA: 37] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Affiliation(s)
- Bao-Wen Li
- World Premier International
Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Minoru Osada
- World Premier International
Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Yoon-Hyun Kim
- World Premier International
Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Yasuo Ebina
- World Premier International
Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Kosho Akatsuka
- World Premier International
Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takayoshi Sasaki
- World Premier International
Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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46
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Bisri SZ, Shimizu S, Nakano M, Iwasa Y. Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics. Adv Mater 2017; 29:1607054. [PMID: 28582588 DOI: 10.1002/adma.201607054] [Citation(s) in RCA: 165] [Impact Index Per Article: 23.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2016] [Revised: 02/16/2017] [Indexed: 05/28/2023]
Abstract
Iontronics is a newly emerging interdisciplinary concept which bridges electronics and ionics, covering electrochemistry, solid-state physics, electronic engineering, and biological sciences. The recent developments of electronic devices are highlighted, based on electric double layers formed at the interface between ionic conductors (but electronically insulators) and various electronic conductors including organics and inorganics (oxides, chalcogenide, and carbon-based materials). Particular attention is devoted to electric-double-layer transistors (EDLTs), which are producing a significant impact, particularly in electrical control of phase transitions, including superconductivity, which has been difficult or impossible in conventional all-solid-state electronic devices. Besides that, the current state of the art and the future challenges of iontronics are also reviewed for many applications, including flexible electronics, healthcare-related devices, and energy harvesting.
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Affiliation(s)
- Satria Zulkarnaen Bisri
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan
| | - Sunao Shimizu
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan
| | - Masaki Nakano
- Quantum Phase Electronic Center (QPEC) and Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Yoshihiro Iwasa
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan
- Quantum Phase Electronic Center (QPEC) and Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
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47
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Guo H, Wang Z, Dong S, Ghosh S, Saghayezhian M, Chen L, Weng Y, Herklotz A, Ward TZ, Jin R, Pantelides ST, Zhu Y, Zhang J, Plummer EW. Interface-induced multiferroism by design in complex oxide superlattices. Proc Natl Acad Sci U S A 2017; 114:E5062-9. [PMID: 28607082 DOI: 10.1073/pnas.1706814114] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Interfaces between materials present unique opportunities for the discovery of intriguing quantum phenomena. Here, we explore the possibility that, in the case of superlattices, if one of the layers is made ultrathin, unexpected properties can be induced between the two bracketing interfaces. We pursue this objective by combining advanced growth and characterization techniques with theoretical calculations. Using prototype La2/3Sr1/3MnO3 (LSMO)/BaTiO3 (BTO) superlattices, we observe a structural evolution in the LSMO layers as a function of thickness. Atomic-resolution EM and spectroscopy reveal an unusual polar structure phase in ultrathin LSMO at a critical thickness caused by interfacing with the adjacent BTO layers, which is confirmed by first principles calculations. Most important is the fact that this polar phase is accompanied by reemergent ferromagnetism, making this system a potential candidate for ultrathin ferroelectrics with ferromagnetic ordering. Monte Carlo simulations illustrate the important role of spin-lattice coupling in LSMO. These results open up a conceptually intriguing recipe for developing functional ultrathin materials via interface-induced spin-lattice coupling.
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48
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Zhang P, Ochi T, Fujitsuka M, Kobori Y, Majima T, Tachikawa T. Topotactic Epitaxy of SrTiO3
Mesocrystal Superstructures with Anisotropic Construction for Efficient Overall Water Splitting. Angew Chem Int Ed Engl 2017. [DOI: 10.1002/ange.201702223] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Affiliation(s)
- Peng Zhang
- The Institute of Scientific and Industrial Research (SANKEN); Osaka University; Mihogaoka 8-1, Ibaraki Osaka 567-0047 Japan
| | - Tomoya Ochi
- Department of Chemistry; Graduate School of Science; Kobe University; 1-1 Rokkodai-cho, Nada-ku Kobe 657-8501 Japan
| | - Mamoru Fujitsuka
- The Institute of Scientific and Industrial Research (SANKEN); Osaka University; Mihogaoka 8-1, Ibaraki Osaka 567-0047 Japan
| | - Yasuhiro Kobori
- Department of Chemistry; Graduate School of Science; Kobe University; 1-1 Rokkodai-cho, Nada-ku Kobe 657-8501 Japan
- Molecular Photoscience Research Center; Kobe University; 1-1 Rokkodai-cho, Nada-ku Kobe 657-8501 Japan
| | - Tetsuro Majima
- The Institute of Scientific and Industrial Research (SANKEN); Osaka University; Mihogaoka 8-1, Ibaraki Osaka 567-0047 Japan
| | - Takashi Tachikawa
- Department of Chemistry; Graduate School of Science; Kobe University; 1-1 Rokkodai-cho, Nada-ku Kobe 657-8501 Japan
- Molecular Photoscience Research Center; Kobe University; 1-1 Rokkodai-cho, Nada-ku Kobe 657-8501 Japan
- PRESTO; Science and Technology Agency (JST); 24-1-8 Honcho Kawaguchi Saitama 332-0012 Japan
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49
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Zhang P, Ochi T, Fujitsuka M, Kobori Y, Majima T, Tachikawa T. Topotactic Epitaxy of SrTiO3
Mesocrystal Superstructures with Anisotropic Construction for Efficient Overall Water Splitting. Angew Chem Int Ed Engl 2017; 56:5299-5303. [DOI: 10.1002/anie.201702223] [Citation(s) in RCA: 76] [Impact Index Per Article: 10.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2017] [Indexed: 11/12/2022]
Affiliation(s)
- Peng Zhang
- The Institute of Scientific and Industrial Research (SANKEN); Osaka University; Mihogaoka 8-1, Ibaraki Osaka 567-0047 Japan
| | - Tomoya Ochi
- Department of Chemistry; Graduate School of Science; Kobe University; 1-1 Rokkodai-cho, Nada-ku Kobe 657-8501 Japan
| | - Mamoru Fujitsuka
- The Institute of Scientific and Industrial Research (SANKEN); Osaka University; Mihogaoka 8-1, Ibaraki Osaka 567-0047 Japan
| | - Yasuhiro Kobori
- Department of Chemistry; Graduate School of Science; Kobe University; 1-1 Rokkodai-cho, Nada-ku Kobe 657-8501 Japan
- Molecular Photoscience Research Center; Kobe University; 1-1 Rokkodai-cho, Nada-ku Kobe 657-8501 Japan
| | - Tetsuro Majima
- The Institute of Scientific and Industrial Research (SANKEN); Osaka University; Mihogaoka 8-1, Ibaraki Osaka 567-0047 Japan
| | - Takashi Tachikawa
- Department of Chemistry; Graduate School of Science; Kobe University; 1-1 Rokkodai-cho, Nada-ku Kobe 657-8501 Japan
- Molecular Photoscience Research Center; Kobe University; 1-1 Rokkodai-cho, Nada-ku Kobe 657-8501 Japan
- PRESTO; Science and Technology Agency (JST); 24-1-8 Honcho Kawaguchi Saitama 332-0012 Japan
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50
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Suyolcu YE, Wang Y, Baiutti F, Al-Temimy A, Gregori G, Cristiani G, Sigle W, Maier J, van Aken PA, Logvenov G. Dopant size effects on novel functionalities: High-temperature interfacial superconductivity. Sci Rep 2017; 7:453. [PMID: 28352070 PMCID: PMC5428683 DOI: 10.1038/s41598-017-00539-4] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2016] [Accepted: 02/28/2017] [Indexed: 12/03/2022] Open
Abstract
Among the range of complex interactions, especially at the interfaces of epitaxial oxide systems, contributing to the occurrence of intriguing effects, a predominant role is played by the local structural parameters. In this study, oxide molecular beam epitaxy grown lanthanum cuprate-based bilayers (consisting of a metallic (M) and an insulating phase (I)), in which high-temperature superconductivity arises as a consequence of interface effects, are considered. With the aim of assessing the role of the dopant size on local crystal structure and chemistry, and on the interface functionalities, different dopants (Ca2+, Sr2+ and, Ba2+) are employed in the M-phase, and the M–I bilayers are investigated by complementary techniques, including spherical-aberration-corrected scanning transmission electron microscopy. A series of exciting outcomes are found: (i) the average out-of-plane lattice parameter of the bilayers is linearly dependent on the dopant ion size, (ii) each dopant redistributes at the interface with a characteristic diffusion length, and (iii) the superconductivity properties are highly dependent on the dopant of choice. Hence, this study highlights the profound impact of the dopant size and related interface chemistry on the functionalities of superconducting oxide systems.
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Affiliation(s)
- Y Eren Suyolcu
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany.
| | - Yi Wang
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Federico Baiutti
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Ameer Al-Temimy
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany.,Al-Nahrain Nanorenewable Energy Research Center, Al-Nahrain University, Baghdad, Iraq
| | - Giuliano Gregori
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Georg Cristiani
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Wilfried Sigle
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Joachim Maier
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Peter A van Aken
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Gennady Logvenov
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
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