Two-Dimensional Intrinsic Half-Metals With Large Spin Gaps

Switchable half-metallicity in anti-ferromagnetic bilayer NbS2

Electrical control over spin in spintronics has many advantages over magnetic control such as improved efficiency, reduced energy consumption, enhanced compatibility and faster response. However, direct electrical control also has its disadvantage due to its volatility feature, and thus indirect electrical control with the aid of ferroelectric materials is much more attractive. In this work, we propose another indirect electrical control strategy based on sliding ferroelectricity to achieve half-metallicity in antiferromagnetic bilayer NbS2. Based on density functional theory calculations, it is found that switchable sliding interlayer ferroelectricity can be produced. The built-in electrical field from the resultant out-of-plane polarization can induce a potential energy difference between the two layers, which leads to spin splitting in the band structure. Although the sliding ferroelectricity is generally weak as compared to those intrinsic ferroelectric 2D materials, the spin splitting is strong enough to close the band gap of one of the spin channels and lead to half-metallicity in the antiferromagnetic bilayer NbS2. Our study provides an alternative method to realize sliding induced switchable half-metallicity in 2D antiferromagnetic bilayer systems and thus to extend their practical applications.

Graphendofullerene: a novel molecular two-dimensional ferromagnet

Carbon chemistry has attracted a lot of attention from chemists, physicists and material scientists in the last few decades. The recent discovery of graphullerene provides a promising platform for many applications due to its exceptional electronic properties and the possibility to host molecules or clusters inside the fullerene units. Herein, we introduce graphendofullerene, a novel molecular-based two-dimensional (2D) magnetic material formed by trimetallic nitride clusters encapsulated on graphullerene. Through first-principles calculations, we demonstrate the successful incorporation of the molecules into the 2D network formed by C80 fullerenes, which leads to robust long-range ferromagnetic order with a Curie temperature (T C) of 38 K. Additionally, we achieve a 45% and 18% increase in T C by strain engineering and electrostatic doping, respectively. These findings open the way for a new family of molecular 2D magnets based on graphendofullerene for advanced technologies.

Carrier-Induced Room-Temperature Half-Metallicity in an Exfoliable Two-Dimensional Cr(TCNB)2 Metal-Organic Framework

Half-metallicity, enabling 100% spin polarization, is pivotal for spintronics but remains challenging to achieve in low-dimensional materials. Using first-principles calculations, we theoretically propose an experimentally feasible two-dimensional (2D) metal-organic framework (MOF) magnetic semiconductor, Cr(TCNB)2 (TCNB = 1,2,4,5-tetracyanobenzene). This monolayer can be exfoliated from a Ag(100) substrate due to its low exfoliation energy of 0.14 J/m2. Phonon spectra and ab initio molecular dynamics confirm its dynamical and thermal stability up to 600 K. Cr(TCNB)2 exhibits a ferrimagnetic ground state stabilized by direct p-d magnetic interactions. Notably, carrier doping induces half-metallicity, transforming it into a fully spin-polarized conductor. Monte Carlo simulation predicts that doping elevates the Curie temperature above room temperature. This work introduces a novel 2D MOF magnet with carrier-tunable half-metallicity, offering promising potential for flexible and nanoscale spintronic devices.

Two-dimensional multiferroic RuClF/AgBiP2S6 van der Waals heterostructures with valley splitting properties and controllable magnetic anisotropy

The investigation of new properties in two-dimensional (2D) multiferroic heterostructures is significant. In this work, the electronic properties and magnetic anisotropy energies (MAEs) of 2D multiferroic RuClF/AgBiP2S6 van der Waals (vdW) heterostructures are systematically studied by first principles calculations based on density functional theory (DFT). The Hubbard on-site Coulomb parameter (U) of Ru atoms is necessary to account for the strong correlation among the three-dimensional electrons of Ru. RuClF/AgBiP2S6 heterostructures in different polarizations (RuClF/AgBiP2S6-P↑ and RuClF/AgBiP2S6-P↓) are ferromagnetic semiconductors with stable structures. Valley polarizations are present in the band structures of RuClF/AgBiP2S6 heterostructures with spin-orbit coupling (SOC), the valley splitting energies of which are 279 meV and 263 meV, respectively. The MAEs of RuClF/AgBiP2S6 heterostructures indicate perpendicular magnetic anisotropy (PMA), which are primarily attributed to the differences in matrix elements within Ru (dyz, dz2) orbitals. In addition, valley splittings and MAEs of RuClF/AgBiP2S6 heterostructures are modified at different biaxial strains. Specifically, the highest valley splittings are 283 meV and 287 meV at ε = 2%, while they disappear at ε = -6%. The PMA of RuClF/AgBiP2S6-P↑ is gradually decreased at biaxial strains of -6% to 2%, and MAE is transformed into in-plane magnetic anisotropy (IMA) at ε = 4%. RuClF/AgBiP2S6-P↓ maintains PMA at different strains. The study of non-volatile electrical control of valley splitting phenomena in multiferroic RuClF/AgBiP2S6 heterostructures is crucial in the field of valleytronic devices, which has important theoretical significance.

Evidence of Ferromagnetism and Ultrafast Dynamics of Demagnetization in an Epitaxial FeCl2 Monolayer

The development of two-dimensional (2D) magnetism is driven not only by the interest of low-dimensional physics but also by potential applications in high-density miniaturized spintronic devices. However, 2D materials possessing a ferromagnetic order with a relatively high Curie temperature (Tc) are rare. In this paper, the evidence of ferromagnetism in monolayer FeCl2 on Au(111) surfaces, as well as the interlayer antiferromagnetic coupling of bilayer FeCl2, is characterized by using spin-polarized scanning tunneling microscopy. A Curie temperature (Tc) of ∼147 K is revealed for monolayer FeCl2, based on our static magneto-optical Kerr effect measurements. Furthermore, temperature-dependent magnetization dynamics is investigated by the time-resolved magneto-optical Kerr effect. A transition from one- to two-step demagnetization occurs as the lattice temperature approaches Tc, which supports the Elliott-Yafet spin relaxation mechanism. The findings contribute to a deeper understanding of the underlying mechanisms governing ultrafast magnetization in 2D ferromagnetic materials.

Tunable multiple nonvolatile resistance states in a MnSe-based van der Waals multiferroic tunnel junction

Two-dimensional (2D) van der Waals (vdW) multiferroic tunnel junctions (MFTJs) composed of a ferromagnetic metal and a ferroelectric barrier have controllable thickness and clean interface and can realize the coexistence of tunneling magnetoresistance (TMR) and tunneling electroresistance (TER). Therefore, they have enormous potential application in nonvolatile multistate memories. Here, using first principles combined with non-equilibrium Green's function method, we have systematically investigated the spin-dependent transport properties of Fe3GeTe2/MnSe/Fe3GeTe2 vdW MFTJs with various numbers of barrier layers. By controlling the polarization orientation of the ferroelectric barrier MnSe and the magnetization alignment of the ferromagnetic electrodes Fe3GeTe2, the MnSe-based MFTJs exhibit four nonvolatile resistance states, with the TMR (TER) becoming higher and reaching a maximum of 1.4 × 106% (4114%) as the MnSe layers increase from a bilayer to a tetralayer. Using asymmetric Cu and Fe3GeTe2 as the electrodes, the TER can be further improved from 349% to 618%. Moreover, there is a perfect spin filtering effect in these MFTJs. This work demonstrates the potential applications of MnSe-based devices in multistate nonvolatile memories and spin filters, which will stimulate experimental studies on layer-controllable spintronic devices.

Two-Dimensional Transition Metal Boride TMB12 (TM = V, Cr, Mn, and Fe) Monolayers: Robust Antiferromagnetic Semiconductors with Large Magnetic Anisotropy

Currently, two-dimensional (2D) materials with intrinsic antiferromagnetism have stimulated research interest due to their insensitivity to external magnetic fields and absence of stray fields. Here, we predict a family of stable transition metal (TM) borides, TMB12 (TM = V, Cr, Mn, Fe) monolayers, by combining TM atoms and B12 icosahedra based on first-principles calculations. Our results show that the four TMB12 monolayers have stable antiferromagnetic (AFM) ground states with large magnetic anisotropic energy. Among them, three TMB12 (TM=V, Cr, Mn) monolayers display an in-plane easy magnetization axis, while the FeB12 monolayer has an out-of-plane easy magnetization axis. Among them, the CrB12 and the FeB12 monolayers are AFM semiconductors with band gaps of 0.13 eV and 0.35 eV, respectively. In particular, the AFM FeB12 monolayer is a spin-polarized AFM material with a Néel temperature of 125 K. Moreover, the electronic and magnetic properties of the CrB12 and the FeB12 monolayers can be modulated by imposing external biaxial strains. Our findings show that the TMB12 monolayers are candidates for designing 2D AFM materials, with potential applications in electronic devices.

Surface Stability and Exfoliability of Non-van der Waals Magnetic Chromium Tellurides

Exfoliation of two-dimensional (2D) magnetic materials from non-van der Waals (non-vdW) materials has attracted increasing attention because it provides a great platform for the construction of 2D magnetic materials. For non-vdW magnetic chromium tellurides with high Curie temperatures, their few-layer samples show promising applications in the field of spintronics. However, there is still no consensus on whether the surface structures of few-layer chromium tellurides should be terminated by Cr or Te atoms. By calculating the surface and exfoliation energy, we find that which structure is more stable depends greatly on the value of the chemical potential of Te atoms, and the few-layer sample with a Cr-terminated surface is easier to exfoliate than that with both Te-terminated surfaces. Finally, we propose that different exfoliated structures can be identified by using the atomic number ratio of Cr to Te and the average magnetic moment of Cr atoms in few-layer samples.

Two-dimensional ferromagnetic semiconductors of monolayer BiXO3 (X = Ru, Os) with direct band gaps, high Curie temperatures, and large magnetic anisotropy

Two-dimensional (2D) ferromagnetic semiconductors are highly promising candidates for spintronics, but are rarely reported with direct band gaps, high Curie temperatures (T_c), and large magnetic anisotropy. Using first-principles calculations, we predict that two ferromagnetic monolayers, BiXO₃ (X = Ru, Os), are such materials with a direct band gap of 2.64 and 1.69 eV, respectively. Monte Carlo simulations reveal that the monolayers show high T_c beyond 400 K. Interestingly, both BiXO₃ monolayers exhibit out-of-plane magnetic anisotropy, with magnetic anisotropy energy (MAE) of 1.07 meV per Ru for BiRuO₃ and 5.79 meV per Os for BiOsO₃. The estimated MAE for the BiOsO₃ sheet is one order of magnitude larger than that for the CrI₃ monolayer (685 μeV per Cr). Based on the second-order perturbation theory, it is revealed that the large MAE of the monolayers BiRuO₃ and BiOsO₃ is mainly contributed by the matrix element differences between d_xy and d_x²-y² and d_yz and d_z² orbitals. Importantly, the ferromagnetism remains robust in 2D BiXO₃ under compressive strain, while undergoing a ferromagnetic to antiferromagnetic transition under tensile strain. The intriguing electronic and magnetic properties make BiXO₃ monolayers promising candidates for nanoscale electronics and spintronics.

Two-dimensional ferromagnetic semiconductors of rare-earth Janus 2H-GdIBr monolayers with large valley polarization

Based on a rare-earth Gd atom with 4f electrons, through first-principles calculations, we demonstrate that a Janus 2H-GdIBr monolayer exhibits an intrinsic ferromagnetic (FM) semiconductor character with an indirect band gap of 0.75 eV, a high Curie temperature T_c of 260 K, a significant magnetic moment of 8μ_B per f.u. (f.u. = formula unit), in-plane magnetic anisotropy (IMA) and a large spontaneous valley polarization of 118 meV. The MAE, inter-atomic distance or angle, and T_c can be efficiently modulated by in-plane strains and charge carrier doping. Under a strain range from -5% to 5% and charge carrier doping from -0.3 e to 0.3 e per f.u., the system still retains its FM ordering and the corresponding T_c can be modulated by strains from 233 K to 281 K and by charge carrier doping from 140 K to 245 K. Interestingly, under various strains, the matrix element differences (d_z², d_yz), (d_x²-y², d_xy) and (p_x, p_y) of Gd atoms dominate the MAE behaviors, which originates from the competition between the contributions of the Gd-d orbitals, Gd-p orbitals, and p orbitals of halogen atoms based on the second-order perturbation theory. Inequivalent Dirac valleys are not energetically degenerate due to the time-reversal symmetry breaking in the Janus 2H-GdIBr monolayer. A considerable valley gap between the Berry curvature at the K and K' points provides an opportunity to selectively control the valley freedom and states. External tensile (compressive) strain further increases (decreases) the valley gap up to a maximum (minimum) value of 158 (37) meV, indicating that the valley polarization in the Janus 2H-GdIBr monolayer is robust to external strains. This study provides a novel paradigm and platform to design spintronic devices for next-generation quantum information technology.

Strain induced metal-semiconductor transition in two-dimensional topological half metals

Spintronic applications of two-dimensional (2D) magnetic half metals and semiconductors are thought to be very promising. Here, we suggest a family of stable 2D materialsM n 2 X 7 (X = Cl, Br, and I). The monolayerM n 2 C l 7 exhibits an in-plane ferromagnetic (FM) ground state with a Curie temperature of 118 K, which is unveiled to be a 2D Weyl half semimetal with two Weyl points of opposite chirality connected by a remarkable Fermi arc. In addition, it appears that a biaxial tensile strain can lead to a metal-semiconductor phase transition as a result of the increased anomalous Jahn-Teller distortions, which raise the degeneracy of thee g energy level and cause a significant energy splitting. A 10% biaxial tensile strain also increases the Curie temperature to about 159 K, which originates from the enhanced Mn-Cl-Mn FM superexchange. Moreover, the metal-semiconductor transition can also be induced by a uniaxial strain. Our findings provide an idea to create 2D magnetic semiconductors through metal-semiconductor transition in half metals.

Two-dimensional half-metallicity and fully spin-polarized topological fermions in monolayer EuOBr

Two-dimensional (2D) half-metal and topological states have been the current research focus in condensed matter physics. Herein, we report a novel 2D material named EuOBr monolayer, which can simultaneously show 2D half-metal and topological fermions. This material shows a metallic state in the spin-up channel but a large insulating gap of 4.38 eV in the spin-down channel. In the conducting spin channel, the EuOBr monolayer shows the coexistence of Weyl points and nodal-lines near the Fermi level. These nodal-lines are classified by type-I, hybrid, closed, and open nodal-lines. The symmetry analysis suggests these nodal-lines are protected by the mirror symmetry, which cannot be broken even spin-orbit coupling is included because the ground magnetization direction in the material is out-of-plane [001]. The topological fermions in the EuOBr monolayer are fully spin-polarized, which can be meaningful for future applications in topological spintronic nano-devices.

Two-dimensional XY ferromagnetism above room temperature in Janus monolayer V2XN (X = P, As)

Two-dimensional (2D) XY magnets with easy magnetization planes support the nontrivial topological spin textures whose dissipationless transport is highly desirable for 2D spintronic devices. Here, we predicted that Janus monolayer V₂XN (X = P, As) with a square lattice is a 2D-XY ferromagnet using first-principles calculations. Both magnetocrystalline anisotropy and magnetic shape anisotropy favor an in-plane magnetization, leading to an easy magnetization xy-plane in Janus monolayer V₂XN. With the help of the Monte Carlo simulations, we observed the Berezinskii-Kosterlitz-Thouless (BKT) phase transition in monolayer V₂XN with the transition temperature T_BKT being above room temperature. In particular, monolayer V₂AsN has a magnetic anisotropy energy (MAE) of 292.0 μeV per V atom and a T_BKT of 434 K, which is larger than that of monolayer V₂PN. Moreover, a tensile strain of 5% can further improve the T_BKT of monolayer V₂XN to be above 500 K. Our results indicated that Janus monolayer V₂XN (X = P, As) can be candidate materials to realize high-temperature 2D-XY ferromagnetism for spintronics applications.

Two-dimensional magnetic Janus monolayers and their van der Waals heterostructures: a review on recent progress

A magnetic Janus monolayer, a special type of material which has asymmetric arrangements of its surface at the nanoscale, has been shown to present rather exotic properties for applications in spintronics and its intersections. This review aims to offer a comprehensive review of the emergent physical properties of magnetic Janus monolayers and their van der Waals heterostructures from a theoretical point of view. The review starts by introducing the theoretical methodologies composed of the state-of-the-art methods and the challenges and limitations in validations for the descriptions of the magnetic ground states and thermodynamic properties in magnetic materials. The built-in polarization field induced physical phenomena of magnetic Janus monolayers are then presented. The tunable electronic and magnetic properties of magnetic Janus monolayer-based van der Waals heterostructures are discussed. Finally, the conclusions and future challenges in this field are prospected. This review serves as a complete summary of the two-dimensional magnetic Janus library and emergent electronic and magnetic properties in magnetic Janus monolayers and their heterostructures, and provides guidelines for the design of electronic and spintronic devices based on Janus materials.

Bipolar spin-filtering and giant magnetoresistance effect in spin-semiconducting zigzag graphene nanoribbons

Spintronics is one of the main topics in condensed matter physics, in which half-metallicity and giant magnetoresistance are two important objects to achieve. In this work, we study the spin dependent transport properties of zigzag graphene nanoribbons (ZGNR) with asymmetric edge hydrogenation and different magnetic configurations using the non-equilibrium Green's function method combined with density functional calculations. Our results show that when the magnetic configurations of the electrodes change from parallel to antiparallel, the currents in the tunnel junction change substantially, resulting in a high conductance state and a low conductance state, with the tunnel magnetoresistance (TMR) ratio larger than 1 × 10⁵% achieved. In addition, in the parallel magnetic configurations, an ideal bipolar spin filtering effect is observed, making it flexible to switch the spin polarity of current by reversing the bias direction. All these features originate from the spin semiconducting behavior of the asymmetrically hydrogenated ZGNRs. The findings suggest that asymmetric edge hydrogenation provides an important way to construct multi-functional spintronic devices with ZGNRs.

Construction of Long-Range Magnetic Sequences on Different Surfaces of BaTiO3

Using the first-principles spin-density-functional theory calculations, we studied the origin of ferromagnetism from non-magnetic ferroelectric barium titanate (BaTiO₃ ) and found out vacancies in different surface can successfully contribute to the origin of ferromagnetism. Accurately, our findings demonstrate that both O and Ti vacancies induce ferromagnetism on the (001) and (010) surfaces of BaTiO₃ , and the optimal Ti-O bond length can control the vacancy-induced spin density that is delocalized or concentrated in the real space outside the vacancy, and it helps to enhance our understanding on the long-range magnetic order induced by the vacancy. In addition, intrinsic magnetism is shown on the defect-free (110) surface, and the structure is found to be a near-ideal two-dimensional Ising ferromagnet with large magnetocrystalline anisotropy, and it supplies the platform for studying basic spin behavior of BaTiO₃ and more according materials.

Large tunneling magnetoresistance in van der Waals magnetic tunnel junctions based on FeCl2 films with interlayer antiferromagnetic couplings

Antiferromagnets (AFMs) are some of the most promising candidates for next-generation magnetic memory technology owing to their advantages over conventional ferromagnets (FMs), such as zero stray field and THz-range magnetic resonance frequency. Motivated by the recent synthesis of FeCl₂ films with interlayer AFM and intralayer FM couplings, we investigated the magnetic properties of few-layer FeCl₂ and the spin-dependent transmissions of graphite/bilayer FeCl₂/graphite and Au/n-layer FeCl₂/Au magnetic tunnel junctions (MTJs) using first-principles calculations combined with the nonequilibrium Green's function. The interlayer AFM coupling of FeCl₂ is certified to be stable and independent of the stacking orders and relative displacement between layers. Furthermore, based on the Au electrode with better conductive performance than the graphite electrode and monolayer 1T-FeCl₂ with complete spin polarization, high Curie temperature and large magnetic anisotropic energy, a high tunnel magnetoresistance (TMR) ratio of 2.7 × 10³% is achieved in Au/bilayer FeCl₂/Au MTJs at zero bias and it increases with different layers of FeCl₂ (n = 2-10). These excellent spin transport properties of Au/n-layer FeCl₂/Au MTJs based on two-dimensional (2D) AFM barriers with out-of-plane magnetization directions suggest their great potential for application in high-reliability, high-speed and high-density spintronic devices.

General Synthesis of 2D Magnetic Transition Metal Dihalides via Trihalide Reduction

Two-dimensional (2D) transition metal dihalides (TMDHs) have been receiving extensive attention due to their diversified magnetic properties and promising applications in spintronics. However, controlled growth of 2D TMDHs remains challenging owing to their extreme sensitivity to atmospheric moisture. Herein, using a home-built nitrogen-filled interconnected glovebox system, a universal chemical vapor deposition synthesis route of high-quality 2D TMDH flakes (1T-FeCl₂, FeBr₂, VCl₂, and VBr₂) by reduction of their trihalide counterparts is developed. Representatively, ultrathin (∼8.6 nm) FeCl₂ flakes are synthesized on SiO₂/Si, while on graphene/Cu foil the thickness can be down to monolayer (1L). Reflective magnetic circular dichroism spectroscopy shows an interlayer antiferromagnetic ordering of FeCl₂ with a Neel temperature at ∼17 K. Scanning tunneling microscopy and spectroscopy further identify the atomic-scale structures and band features of 1L and bilayer FeCl₂ on graphene/Cu foil.

Exchange interactions in the 1T-VSe2 monolayer and their modulation via electron doping using alkali metal adsorption and the electride substrate

The modulation of exchange interactions in layered magnets has fundamental research value and potential applications in spintronics. Based on first-principles calculations, the exchange interactions in the experimentally controversial room-temperature ferromagnetic 1T-VSe₂ monolayer are systematically studied. It is found that three shells of nearest-neighbor Heisenberg exchange interactions and higher-order interactions are crucial for an accurate description of the magnetism and its thermal stability in the 1T-VSe₂ monolayer. Based on our understanding of tuning the magnetic interactions and the magnetic ground state in the 1T-VSe₂ monolayer via external factors, two modulation methods, involving adsorption of the alkali metal lithium and the electride Ca₂N substrate, are proposed. In both Li-VSe₂ and VSe₂/Ca₂N systems, the strongly frustrated Heisenberg exchange interaction competes with the Dzyaloshinskii-Moriya interaction and magnetocrystalline anisotropy, leading to complex magnetic ground states, such as antiferromagnetic spin spiral and periodic antiferromagnetic cycloidal states. Moreover, the higher-order exchange interactions play a crucial role in the stabilization of long-range double-row-wise antiferromagnetic states in Li-VSe₂ and VSe₂/Ca₂N. These results highlight the effective manipulation of exchange interactions in two-dimensional magnets.

Mini-review of interesting properties in Mn2CoAl bulk and films

Heusler compounds exhibit many interesting properties, such as high thermopower, magnetocaloric properties, and even topological insulator states. Heusler Mn2CoAl alloy has been experimentally and theoretically proposed as a promising spin-gapless semiconductor with novel electronic, magnetic, spintronic, transport, and topological properties. Furthermore, the spin-gapless semiconducting-like behaviors are also predicted in Mn2CoAl films by measuring the transport and magnetic properties. This mini-review systematically summarizes the interesting properties of Mn2CoAl bulk and Mn2CoAl-based films. This mini-review is hoped to guide further experimental investigations and applications in the particular scientific community.

Integrating ferromagnetism and ferroelectricity in an iron chalcogenide monolayer: a first-principles study

Two-dimensional (2D) ferro-type materials have received great attention owing to the remarkable polarization effect in optoelectronics and spintronics. Using the first-principles method, the coupling between ferromagnetism and ferroelectricity is investigated in a multiferroic Janus 1T-FeSSe monolayer, which has a strong Stoner ferromagnetic ground state. The magnetic anisotropy energy (MAE) is apparently impacted by the out-of-plane asymmetry donated ferroelectricity, which is reflected by the asymmetry of the Z-MAE image. The easy magnetization axis of Janus FeSSe is the +y axis with a large MAE of 0.59 meV, rooting in unpaired d electrons of Fe atoms. The transformation of band splitting and Fermi surface can be effectively engineered by different magnetic polarization directions. The ferromagnetic (FM) coupling of the FeSSe monolayer is very robust under external strain within the range of -6% to 6%, while the strength of magnetic moment of Fe atoms and polarization are easily strain-engineered, the intrinsic mechanism of which can be elaborated by the GKA rules that depend on angles and distances. This multiferroic FeSSe monolayer provides a new platform for exploring the coupling of 2D ferromagnetism and ferroelectricity and designing low-dimensional multiferroic electronics.

Structural, Electronic, and Magnetic Characteristics of Graphitic Carbon Nitride Nanoribbons and Their Applications in Spintronics

The development of quantum information and quantum computing technology requires special materials to design and manufacture nanosized spintronic devices. Possessing remarkable structural, electronic, and magnetic characteristics, graphitic carbon nitride (g-C₃N₄) can be a promising candidate as a building block of futuristic nanoelectronics and spintronic systems. Here, using first-principles calculations, we perform a comprehensive study on the structural stability as well as electronic and magnetic properties of triazine-based g-C₃N₄ nanoribbons (gt-CNRs). Our calculations show that gt-CNRs with different edge conformation exhibit distinct electronic and magnetic characteristics, which can be tuned by the edge H-passivation rate. By investigating gt-CNRs with various possible edge configurations and H-termination rates, we show that while the ferromagnetic (FM) ordering of gt-CNRs stays preserved for all of the studied configurations, half metallicity can only be achieved in nanoribbons with specific edge structure under full H-passivation rate. For spintronic application purposes, we also study spin-transport properties of half-metal gt-CNRs. By determining the suitable gt-CNR configuration, we show the possibility of developing a perfect gt-CNR-based spin filter with a spin filter efficiency (SFE) of 100%. Considering the above-mentioned notable electronic and magnetic characteristics as well as its high thermal stability, we show that gt-CNR would be a remarkable material to fabricate multifunctional spintronic devices.

Two-dimensional spin-gapless semiconductors: A mini-review

In the past decade, two-dimensional (2D) materials and spintronic materials have been rapidly developing in recent years. 2D spin-gapless semiconductors (SGSs) are a novel class of ferromagnetic 2D spintronic materials with possible high Curie temperature, 100% spin-polarization, possible one-dimensional or zero-dimensional topological signatures, and other exciting spin transport properties. In this mini-review, we summarize a series of ideal 2D SGSs in the last 3 years, including 2D oxalate-based metal-organic frameworks, 2D single-layer Fe2I2, 2D Cr2X3 (X = S, Se, and Te) monolayer with the honeycomb kagome (HK) lattice, 2D CrGa2Se4 monolayer, 2D HK Mn-cyanogen lattice, 2D MnNF monolayer, and 2D Fe4N2 pentagon crystal. The mini-review also discusses the unique magnetic, electronic, topological, and spin-transport properties and the possible application of these 2D SGSs. The mini-review can be regarded as an improved understanding of the current state of 2D SGSs in recent 3 years.

The Magnetic Genome of Two-Dimensional van der Waals Materials

Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage

As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy-efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band-to-band tunneling, spin-orbit coupling, spin-valley locking, and quantum entanglement. The emerging 2D layered materials, featured by their exotic electrical, magnetic, optical, and structural properties, provide a revolutionary low-dimensional and manufacture-friendly platform (and many more opportunities) to implement these quantum-engineered devices, compared to the traditional electronic materials system. Here, the progress in quantum-engineered devices is reviewed and the opportunities/challenges of exploiting 2D materials are analyzed to highlight their unique quantum properties that enable novel energy-efficient devices, and useful insights to quantum device engineers and 2D-material scientists are provided.

VSi2P4/FeCl2 van der Waals heterostructure: A two-dimensional reconfigurable magnetic diode

The reconfigurable magnetic tunnel diode has recently been proposed as a promising approach to decrease the base collector leakage currents. However, conventional bulk interfaces usually suffer from strong Fermi level...

Transition Metal-Free Half-Metallicity in Two-Dimensional Gallium Nitride with a Quasi-Flat Band

Two-dimensional half-metallicity without a transition metal is an attractive attribute for spintronics applications. On the basis of first-principles calculation, we revealed that a two-dimensional gallium nitride (2D-GaN), which was recently synthesized between graphene and SiC or wurtzite GaN substrate, exhibits half-metallicity due to its half-filled quasi-flat band. We found that graphene plays a crucial role in stabilizing a local octahedral structure, whose unusually high density of states due to a flat band leads to a spontaneous phase transition to its half-metallic phase from normal metal. It was also found that its half-metallicity is strongly correlated to the in-plane lattice constants and thus subjected to substrate modification. To investigate the magnetic property, we simplified its magnetic structure with a two-dimensional Heisenberg model and performed Monte Carlo simulation. Our simulation estimated its Curie temperature (T_C) to be ∼165 K under a weak external magnetic field, suggesting that transition metal-free 2D-GaN exhibiting p orbital-based half-metallicity can be utilized in future spintronics.

Recent Developments in van der Waals Antiferromagnetic 2D Materials: Synthesis, Characterization, and Device Implementation

Magnetism in two dimensions is one of the most intriguing and alluring phenomena in condensed matter physics. Atomically thin 2D materials have emerged as a promising platform for exploring magnetic properties, leading to the development of essential technologies such as supercomputing and data storage. Arising from spin and charge dynamics in elementary particles, magnetism has also unraveled promising advances in spintronic devices and spin-dependent optoelectronics and photonics. Recently, antiferromagnetism in 2D materials has received extensive attention, leading to significant advances in their understanding and emerging applications; such materials have zero net magnetic moment yet are internally magnetic. Several theoretical and experimental approaches have been proposed to probe, characterize, and modulate the magnetic states efficiently in such systems. This Review presents the latest developments and current status for tuning the magnetic properties in distinct 2D van der Waals antiferromagnets. Various state-of-the-art optical techniques deployed to investigate magnetic textures and dynamics are discussed. Furthermore, device concepts based on antiferromagnetic spintronics are scrutinized. We conclude with remarks on related challenges and technological outlook in this rapidly expanding field.

Ni(NCS)2 monolayer: a robust bipolar magnetic semiconductor

Searching for experimentally feasible intrinsic two-dimensional ferromagnetic semiconductors is of great significance for applications of nanoscale spintronic devices. Here, based on the first-principles calculations, an Ni(NCS)₂ monolayer was systematically investigated. The results showed that the Ni(NCS)₂ monolayer was a robust bipolar ferromagnetic semiconductor with a moderate bandgap of ∼1.5 eV. Based on the Monte Carlo simulation, its Curie temperature was about 37 K. Interestingly, the Ni(NCS)₂ monolayer remains ferromagnetic ordering when strain and electron doping were applied. However, ferromagnetic-to-antiferromagnetic phase transition occurred when high concentrations of holes were doped. Besides, the Ni(NCS)₂ monolayer is confirmed to be potentially exfoliated from its bulk forms due to its small exfoliated energy. Finally, the Ni(NCS)₂ monolayer's thermodynamic, dynamic, and mechanical stabilities were confirmed by the phonon spectrum calculation, ab initio molecular dynamics simulation and elastic constants calculation, respectively. The results showed that the Ni(NCS)₂ monolayer, as a novel 2D ferromagnetic candidate material of new magnetic molecular framework materials, may have a promising potential for magnetic nanoelectronic devices.

Two-Dimensional Janus FeXY (X, Y = Cl, Br, and I, X ≠ Y) Monolayers: Half-Metallic Ferromagnets with Tunable Magnetic Properties under Strain

Two-dimensional (2D) ferromagnetic materials with high spin polarization are highly desirable for spintronic devices. 2D Janus materials exhibit novel properties due to their broken symmetry. However, the electronic structure and magnetic properties of 2D Janus magnetic materials with high spin polarization are still unclear. Inspired by the successful synthesis of a ferromagnetic FeCl₂ monolayer and 2D Janus MoSSe and WSSe, we systematically study the electronic structure and magnetic properties of Janus FeXY (X, Y = Cl, Br, and I, X ≠ Y) monolayers. Based on the Goodenough-Kanamori-Anderson theory, the ferromagnetism stems from the superexchange interaction mediated by Fe-X/Y-Fe bonds. The band gaps of spin-up channels are large enough (>4 eV) to prevent spin flipping, which is beneficial for spintronic devices. Additionally, the sizable magnetocrystalline anisotropy energy (MAE) indicates that Janus FeXY monolayers are suitable for information storage. More importantly, the half-metallic character is still kept in Janus FeXY monolayers, and their magnetic properties are enhanced by the biaxial compressive strain. The MAE of FeClI and FeBrI increases by 1 order of magnitude, and the Curie temperature of FeXY monolayers enhances by 100%. These results provide an example of the 2D Janus half-metallic materials and enrich the 2D magnetic material library.

Controlling phase transition in monolayer metal diiodides XI2(X: Fe, Co, and Ni) by carrier doping

We applied the generalized Bloch theorem to verify the ground state (most stable state) in monolayer metal diiodides 1T-XI₂(X: Fe, Co, and Ni), a family of metal dihalides, using the first-principles calculations. The ground state, which can be ferromagnetic, antiferromagnetic, or spiral state, was specified by a wavevector in the primitive unit cell. While the ground state of FeI₂is ferromagnetic, the spiral state becomes the ground state for CoI₂and NiI₂. Since the multiferroic behavior in the metal dihalide can be preserved by the spiral structure, we believe that CoI₂and NiI₂are promising multiferroic materials in the most stable state. When the lattice parameter increases, we also show that the ground state of NiI₂changes to a ferromagnetic state while others still keep their initial ground states. For the last discussion, we revealed the phase transition manipulated by the hole-electron doping due to the spin-spin competition between the ferromagnetic superexchange and the antiferromagnetic direct exchange. These results convince us that metal diiodides have many benefits for future spintronic devices.

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

Synthesis of emerging 2D layered magnetic materials

van der Waals atomically thin magnetic materials have been recently discovered. They have attracted enormous attention as they present unique magnetic properties, holding potential to tailor spin-based device properties and enable next generation data storage and communication devices. To fully understand the magnetism in two-dimensions, the synthesis of 2D materials over large areas with precise thickness control has to be accomplished. Here, we review the recent advancements in the synthesis of these materials spanning from metal halides, transition metal dichalcogenides, metal phosphosulphides, to ternary metal tellurides. We initially discuss the emerging device concepts based on magnetic van der Waals materials including what has been achieved with graphene. We then review the state of the art of the synthesis of these materials and we discuss the potential routes to achieve the synthesis of wafer-scale atomically thin magnetic materials. We discuss the synthetic achievements in relation to the structural characteristics of the materials and we scrutinise the physical properties of the precursors in relation to the synthesis conditions. We highlight the challenges related to the synthesis of 2D magnets and we provide a perspective for possible advancement of available synthesis methods to respond to the need for scalable production and high materials quality.

Two-dimensional magnetic materials: structures, properties and external controls

Since the discovery of intrinsic ferromagnetism in atomically thin Cr2Gr2Te6 and CrI3 in 2017, research on two-dimensional (2D) magnetic materials has become a highlighted topic. Based on 2D magnetic materials and their heterostructures, exotic physical phenomena at the atomically thin limit have been discovered, such as the quantum anomalous Hall effect, magneto-electric multiferroics, and magnon valleytronics. Furthermore, magnetism in these ultrathin magnets can be effectively controlled by external perturbations, such as electric field, strain, doping, chemical functionalization, and stacking engineering. These attributes make 2D magnets ideal platforms for fundamental research and promising candidates for various spintronic applications. This review aims at providing an overview of the structures, properties, and external controls of 2D magnets, as well as the challenges and potential opportunities in this field.

van der Waals Magnets: Material Family, Detection and Modulation of Magnetism, and Perspective in Spintronics

van der Waals (vdW) materials exhibit great potential in spintronics, arising from their excellent spin transportation, large spin-orbit coupling, and high-quality interfaces. The recent discovery of intrinsic vdW antiferromagnets and ferromagnets has laid the foundation for the construction of all-vdW spintronic devices, and enables the study of low-dimensional magnetism, which is of both technical and scientific significance. In this review, several representative families of vdW magnets are introduced, followed by a comprehensive summary of the methods utilized in reading out the magnetic states of vdW magnets. Thereafter, it is shown that various electrical, mechanical, and chemical approaches are employed to modulate the magnetism of vdW magnets. Finally, the perspective of vdW magnets in spintronics is discussed and an outlook of future development direction in this field is also proposed.

Correlation of the Madelung constant and I-M-I bonding angle with cohesive energy contributions in layered metal diiodides (MI2) with CdI2 (2H polytype) structure

This study uses theoretically methods to investigate, for metal diiodides MI₂ (M = Mg, Ca, Mn, Fe, Cd, Pb) with CdI₂ (2H polytype) structure, the mutual correlation between the structure-characterizing parameters (the flatness parameter of monolayers f, the Madelung constant A, and bonding angle I-M-I) and correlation of these parameters with contributions of the Coulomb and covalent energies to cohesive energy. The energy contributions to cohesive energy are determined with the use of empirical atomic potentials. It is demonstrated that the parameters f and A, and the bonding angle I-M-I are strictly correlated and increase in the same order: FeI₂ < PbI₂ < MnI₂ < CdI₂ < MgI₂ < CaI₂. It is found that with an increase of parameter A and bonding angle I-M-I the relative contribution of the Coulomb energy to cohesive energy increases, whereas the relative contribution of the covalent energy decreases. For a hypothetical MX₂ layered compound with the CdI₂ (2H polytype) structure, composed of regular MX₆ octahedra (angle X-M-X = 90°), the flatness parameter and the Madelung constant are found to be f_reg = 2.449 and A_reg = 2.183, respectively. Correlation of the covalent energy with the type of distortion of MI₆ octahedra (elongation or compression) with respect to regular configuration (angle I-M-I = 90°) is also analyzed.

Electric polarization related Dirac half-metallicity in Mn-trihalide Janus monolayers

A two-dimensional Dirac half-metal system, in which the 100% spin polarization and massless Dirac fermions can coexist, will show more advantages on the efficient spin injection and high spin mobility in spintronic devices. Moreover, it is attractive to achieve out-of-plane electric polarization in addition to the Dirac half-metal behavior, because this will open a new horizon in the field of multifunctional devices. In this work, a systematic study is made of Janus monolayers of Mn2X3Y3 (X, Y = Cl, Br and I, X ≠ Y) with asymmetric out-of-plane structural configurations, based on first-principles calculations. We demonstrate that monolayer Mn2X3Y3 freestanding films will remain stable experimentally by using the stability analysis. All the Janus monolayers show a ferromagnetic ground state and maintain their original DHM behavior. However, due to the large electric polarization, the hybridization intensities of Mn and the halogen atoms on both sides of Mn2Cl3I3 are very different, resulting in an obvious distortion of the spin-polarized Dirac cone. The distorted Dirac cone is repaired by the compression, indicating that strain can improve the orbital distortion induced by the electric polarization. All Mn2X3Y3 monolayer have in-plane magnetization anisotropy, which is mainly contributed by heavy halogen elements (Br and I), and the polarized substitution and biaxial strain will not change the easy magnetization orientation of the system. Thus, the electrically polarized Dirac half-metal system has potential for application in multifunctional spintronic devices.

Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors-A Perspective Review

Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane's seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief introduction of Haldane model for spineless fermions, following three fundamental quantum anomalous Hall models are discussed in this perspective review: i) low-energy effective four band model for magnetic-doped topological insulator (Bi,Sb)₂ Te₃ thin films, ii) four band tight-binding model for graphene with magnetic adatoms, and iii) two (three) band spinful tight-binding model for ferromagnetic spin-gapless semiconductors with honeycomb (kagome) lattice where ground state is intrinsically ferromagnetic. These models cover 2D Dirac materials hosting spinless, spinful, and spin-degenerate Dirac points where various mass terms open bandgap and lead to quantum anomalous Hall effect. With emphasis on the topological phase transition driven by ferromagnetic exchange interaction and its interplay with spin-orbit-coupling, various symmetry constraints on the nature of mass term and the materialization of these models are discussed. This study will shed light on the fundamental theoretical perspectives of quantum anomalous Hall materials.

Data-driven studies of magnetic two-dimensional materials

We use a data-driven approach to study the magnetic and thermodynamic properties of van der Waals (vdW) layered materials. We investigate monolayers of the form \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {A}_2\hbox {B}_2\hbox {X}_6$$\end{document}A2B2X6, based on the known material \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {Cr}_2\hbox {Ge}_2\hbox {Te}_6$$\end{document}Cr2Ge2Te6, using density functional theory (DFT) calculations and machine learning methods to determine their magnetic properties, such as magnetic order and magnetic moment. We also examine formation energies and use them as a proxy for chemical stability. We show that machine learning tools, combined with DFT calculations, can provide a computationally efficient means to predict properties of such two-dimensional (2D) magnetic materials. Our data analytics approach provides insights into the microscopic origins of magnetic ordering in these systems. For instance, we find that the X site strongly affects the magnetic coupling between neighboring A sites, which drives the magnetic ordering. Our approach opens new ways for rapid discovery of chemically stable vdW materials that exhibit magnetic behavior.

The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI2 Heterostructures

The manipulation of valley splitting has potential applications in valleytronics, which lacks in pristine two-dimensional (2D) InSe. Here, we demonstrate that valley physics in InSe can be activated via the magnetic proximity effect exerted by ferromagnetic FeI₂ substrate with spin-orbit coupling. The valley splitting energy can reach 48 meV, corresponding to a magnetic exchange field of ~800 T. The system also presents magnetic anisotropy behavior with its easy magnetization axis tunable from in-plane to out-of-plane by the stacking configurations and biaxial tensile strain. The d-orbital-resolved magnetic anisotropic energy contributions indicate that the tensile strain effect arises from the increase of hybridization between minority Fe d_xy and dx2−y2 states. Our results reveal that the magnetic proximity effect is an effective approach to stimulate the valley properties in InSe to extend its spintronic applications, which is expected to be feasible in other group-III monochalcogenides.

FeCl2 monolayer on HOPG: art of growth and momentum filtering effect

Magnetic layered transition metal halides have received intensive attention due to the potential magnetic properties in their monolayers. Following the recently reported success of trihalide monolayer ferromagnets, we have achieved the growth of a dihalide, FeCl₂, monolayer system on graphite by molecular beam epitaxy. Scanning tunneling microscopy was used in the topographic and spectroscopic study of the monolayer islands at the atomic scale. Results show that the FeCl₂ monolayer is an electronvolt-gaped insulator with various twist angles relative to the substrate. The tunneling probability on the monolayer islands is a function of the twist angle with a max/min ratio of ∼2.5. Our direct experimental evidence finds that the FeCl₂ monolayer is an efficient momentum, perhaps spin, filtering insulating layer with subnanometer thickness.

Mn-Doped black phosphorene for ultrasensitive hydrogen sulfide detection: periodic DFT calculations

This paper addresses the comparative detection capabilities of pristine (BP) and Mn-doped (MP1) black phosphorene sensors toward the noxious H₂S molecule within a periodic density functional framework. The most stable configuration of the H₂S molecule on MP1 preferred the placement of an S-H bond on top of the Mn dopant, while the H-S-H plane was slightly tilted with respect to the surface. The formation of the Mn-modified phosphorene sensor was found to be highly favorable (-3.79 eV), which also enhanced the stabilization of the H₂S molecule (-0.85 eV at HSE06/TZVP). The electronic band structures revealed a direct-to-indirect transition and the observation of an n-type semiconductor through Mn doping. The results indicated that the pristine phosphorene could be converted into an ultrasensitive reusable H₂S nanosensor in terms of both electric conductance (3747) and work function (11 times more sensitive) through Mn doping. The new sensor was also highly selective, with a sensitivity ratio of at least 52.6 with respect to the air components. The recovery time of the Mn-doped material (2.7 s at ambient temperature) was more promising than that of BP from a practical point of view. More discussion of the material is presented with the electronic properties, frontier molecular orbitals, and density of states at rest and under operating conditions.

Robust intrinsic half-metallic ferromagnetism in stable 2D single-layer MnAsS4

Two-dimensional (2D) intrinsic half-metallic materials are of great interest to explore the exciting physics and applications of nanoscale spintronic devices, but no such materials have been experimentally realized. Using first-principles calculations based on density-functional theory, we predicted that single-layer MnAsS4was a 2D intrinsic ferromagnetic (FM) half-metal. The half-metallic spin gap for single-layer MnAsS4is about 1.46 eV, and it has a large spin splitting of about 0.49 eV in the conduction band. Monte Carlo simulations predicted the Curie temperature (Tc) was about 740 K. Moreover, within the biaxial strain ranging from -5% to 5%, the FM half-metallic properties remain unchanged. Its ground-state with 100% spin-polarization ratio at Fermi level may be a promising candidate material for 2D spintronic applications.

One-dimensional transition metal dihalide nanowires as robust bipolar magnetic semiconductors

One-dimensional (1D) materials with robust ferromagnetic ground states are difficult to achieve but provide a significant platform for potential spintronic device applications in future. Herein, a new family of 1D transition metal dihalide (TMCl2; where TM = Cu, Co, Cr) nanowires are proposed by using first-principles calculations. Their dynamic stability is ensured by Born-Oppenheimer molecular dynamics simulations. The electronic structures demonstrate that both CoCl2 and CuCl2 nanowires are promising bipolar magnetic semiconductors (BMSs) and can be converted into 1D half-metal materials by a small amount of carrier doping. The CrCl2 nanowire is an antiferromagnetic semiconductor (AFS). The formation of a BMS is attributed to the superexchange coupling between the Co/Cu atoms through the 3p orbitals in the Cl atoms. By using Monte Carlo simulations, we found that the CoCl2 nanowire has a Curie point of 6 K, while the CuCl2 nanowire has a corresponding Curie point of 14 K. Our results allow us to put forward a strategy to realize 1D BMSs and to design low-dimensional AF spintronic devices.

High-Throughput Computational Search for Half-Metallic Oxides

Half metals are a peculiar class of ferromagnets that have a metallic density of states at the Fermi level in one spin channel and simultaneous semiconducting or insulating properties in the opposite one. Even though they are very desirable for spintronics applications, identification of robust half-metallic materials is by no means an easy task. Because their unusual electronic structures emerge from subtleties in the hybridization of the orbitals, there is no simple rule which permits to select a priori suitable candidate materials. Here, we have conducted a high-throughput computational search for half-metallic compounds. The analysis of calculated electronic properties of thousands of materials from the inorganic crystal structure database allowed us to identify potential half metals. Remarkably, we have found over two-hundred strong half-metallic oxides; several of them have never been reported before. Considering the fact that oxides represent an important class of prospective spintronics materials, we have discussed them in further detail. In particular, they have been classified in different families based on the number of elements, structural formula, and distribution of density of states in the spin channels. We are convinced that such a framework can help to design rules for the exploration of a vaster chemical space and enable the discovery of novel half-metallic oxides with properties on demand.

Spintronics in Two-Dimensional Materials

Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) devices. Recently, two-dimensional (2D) materials have been drawing tremendous attention in spintronics owing to their distinctive spin-dependent properties, such as the ultra-long spin relaxation time of graphene and the spin-valley locking of transition metal dichalcogenides. Moreover, the related heterostructures provide an unprecedented probability of combining the different characteristics via proximity effect, which could remedy the limitation of individual 2D materials. Hence, the proximity engineering has been growing extremely fast and has made significant achievements in the spin injection and manipulation. Nevertheless, there are still challenges toward practical application; for example, the mechanism of spin relaxation in 2D materials is unclear, and the high-efficiency spin gating is not yet achieved. In this review, we focus on 2D materials and related heterostructures to systematically summarize the progress of the spin injection, transport, manipulation, and application for information storage and processing. We also highlight the current challenges and future perspectives on the studies of spintronic devices based on 2D materials.

Intrinsic ferromagnetism with high temperature, strong anisotropy and controllable magnetization in the CrX (X = P, As) monolayer

2D ferromagnetic (FM) materials with high temperature, large magnetocrystalline anisotropic energy (MAE), and controllable magnetization are highly desirable for novel nanoscale spintronic applications. Herein by using DFT and Monte Carlo simulations, we demonstrate the possibility of realizing intrinsic ferromagnetism in 2D monolayer CrX (X = P, As), which are stable and can be exfoliated from their bulk phase with a van der Waals layered structure. Following the Goodenough-Kanamori-Anderson (GKA) rule, the long-range ferromagnetism of CrX is caused via a 90° superexchange interaction along Cr-P(As)-Cr bonds. The Curie temperature of CrP is predicted to be 232 K based on a Heisenberg Hamiltonian model, while the Berezinskii-Kosterlitz-Thouless transition temperature of CrAs is as high as 855 K. In contrast to other 2D magnetic materials, the CrP monolayer exhibits a significant uniaxial MAE of 217 μeV per Cr atom originating from spin-orbit coupling. Analysis of MAE reveals that CrP favors easy out-of-plane magnetization, while CrAs prefers easy in-plane magnetization. Remarkably, hole and electron doping can switch the magnetization axis in between the in-plane and out-of-plane direction, allowing for the effective control of spin injection/detection in 2D structures. Our results offer an ideal platform for realizing 2D magnetoelectric devices such as spin-FETs in spintronics.

High throughput study on magnetic ground states with Hubbard U corrections in transition metal dihalide monolayers

We present a high throughput study of the magnetic ground states for 90 transition metal dihalide monolayers TMX₂ using density functional theory based on a collection of Hubbard U values. Stable geometrical phases between 2H and 1T are first determined. Spin-polarized calculations show that 50 out of 55 magnetic TMX₂ monolayers are energetically prone to the 1T phase. Further, the magnetic ground states are determined by considering four local spin models with respect to different U values. Interestingly, 23 out of 55 TMX₂ monolayers exhibit robust magnetic ground orderings which will not be changed by the U values. Among them, NiCl₂ with a magnetic moment of 2 μ _B is a ferromagnetic (FM) insulator, while the VX₂, MnX₂ (X = Cl, Br and I), PtCl₂ and CoI₂ monolayers have noncollinear antiferromagnetic (120°-AFM) ground states with a tiny in-plane magnetic anisotropic energy, indicating flexible magnetic orientation rotation. The exchange parameters for both robust FM and 120°-AFM systems are analyzed in detail with the Heisenberg model. Our high-throughput calculations give a systematic study of the electronic and magnetic properties of TMX₂ monolayers, and these two-dimensional materials with versatile magnetic behavior may have great potential for spintronic applications.

Strain modulated ferromagnetic phase transitions in monolayer FeCl2 through exchange competitions: the first-principle and Monte Carlo simulations

Strain drives the magnetic phase transition of 1T-FeCl₂ through exchange competitions.