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Ramezani F, Strasbourg M, Parvez S, Saxena R, Jariwala D, Borys NJ, Whitaker BM. Predicting quantum emitter fluctuations with time-series forecasting models. Sci Rep 2024; 14:6920. [PMID: 38519600 PMCID: PMC10959974 DOI: 10.1038/s41598-024-56517-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Accepted: 03/07/2024] [Indexed: 03/25/2024] Open
Abstract
2D materials have important fundamental properties allowing for their use in many potential applications, including quantum computing. Various Van der Waals materials, including Tungsten disulfide (WS2), have been employed to showcase attractive device applications such as light emitting diodes, lasers and optical modulators. To maximize the utility and value of integrated quantum photonics, the wavelength, polarization and intensity of the photons from a quantum emission (QE) must be stable. However, random variation of emission energy, caused by the inhomogeneity in the local environment, is a major challenge for all solid-state single photon emitters. In this work, we assess the random nature of the quantum fluctuations, and we present time series forecasting deep learning models to analyse and predict QE fluctuations for the first time. Our trained models can roughly follow the actual trend of the data and, under certain data processing conditions, can predict peaks and dips of the fluctuations. The ability to anticipate these fluctuations will allow physicists to harness quantum fluctuation characteristics to develop novel scientific advances in quantum computing that will greatly benefit quantum technologies.
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Affiliation(s)
- Fereshteh Ramezani
- Electrical and Computer Engineering Department, Montana State University, Bozeman, USA.
| | | | - Sheikh Parvez
- Department of Physics, Montana State University, Bozeman, USA
- Materials Science Program, Montana State University, Bozeman, USA
| | - Ravindra Saxena
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, USA
| | - Nicholas J Borys
- Department of Physics, Montana State University, Bozeman, USA
- Materials Science Program, Montana State University, Bozeman, USA
- Optical Technology Center, Montana State University, Bozeman, USA
| | - Bradley M Whitaker
- Electrical and Computer Engineering Department, Montana State University, Bozeman, USA
- Optical Technology Center, Montana State University, Bozeman, USA
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2
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Liu A, Zhang X, Liu Z, Li Y, Peng X, Li X, Qin Y, Hu C, Qiu Y, Jiang H, Wang Y, Li Y, Tang J, Liu J, Guo H, Deng T, Peng S, Tian H, Ren TL. The Roadmap of 2D Materials and Devices Toward Chips. NANO-MICRO LETTERS 2024; 16:119. [PMID: 38363512 PMCID: PMC10873265 DOI: 10.1007/s40820-023-01273-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 02/17/2024]
Abstract
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
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Affiliation(s)
- Anhan Liu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Xiaowei Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Ziyu Liu
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yuning Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China
| | - Xueyang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Chen Hu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yanqing Qiu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Han Jiang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yang Wang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yifan Li
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China.
| | - Tao Deng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
- IMECAS-HKUST-Joint Laboratory of Microelectronics, Beijing, 100029, People's Republic of China.
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
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3
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Xu DD, Vong AF, Utama MIB, Lebedev D, Ananth R, Hersam MC, Weiss EA, Mirkin CA. Sub-Diffraction Correlation of Quantum Emitters and Local Strain Fields in Strain-Engineered WSe 2 Monolayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2314242. [PMID: 38346232 DOI: 10.1002/adma.202314242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2023] [Indexed: 03/27/2024]
Abstract
Strain-engineering in atomically thin metal dichalcogenides is a useful method for realizing single-photon emitters (SPEs) for quantum technologies. Correlating SPE position with local strain topography is challenging due to localization inaccuracies from the diffraction limit. Currently, SPEs are assumed to be positioned at the highest strained location and are typically identified by randomly screening narrow-linewidth emitters, of which only a few are spectrally pure. In this work, hyperspectral quantum emitter localization microscopy is used to locate 33 SPEs in nanoparticle-strained WSe2 monolayers with sub-diffraction-limit resolution (≈30 nm) and correlate their positions with the underlying strain field via image registration. In this system, spectrally pure emitters are not concentrated at the highest strain location due to spectral contamination; instead, isolable SPEs are distributed away from points of peak strain with an average displacement of 240 nm. These observations point toward a need for a change in the design rules for strain-engineered SPEs and constitute a key step toward realizing next-generation quantum optical architectures.
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Affiliation(s)
- David D Xu
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Albert F Vong
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - M Iqbal Bakti Utama
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Riddhi Ananth
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Mark C Hersam
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
- Department of Electrical and Computer Engineering, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Emily A Weiss
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Chad A Mirkin
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
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Wang J, He L, Zhang Y, Nong H, Li S, Wu Q, Tan J, Liu B. Locally Strained 2D Materials: Preparation, Properties, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2314145. [PMID: 38339886 DOI: 10.1002/adma.202314145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 01/28/2024] [Indexed: 02/12/2024]
Abstract
2D materials are promising for strain engineering due to their atomic thickness and exceptional mechanical properties. In particular, non-uniform and localized strain can be induced in 2D materials by generating out-of-plane deformations, resulting in novel phenomena and properties, as witnessed in recent years. Therefore, the locally strained 2D materials are of great value for both fundamental studies and practical applications. This review discusses techniques for introducing local strains to 2D materials, and their feasibility, advantages, and challenges. Then, the unique effects and properties that arise from local strain are explored. The representative applications based on locally strained 2D materials are illustrated, including memristor, single photon emitter, and photodetector. Finally, concluding remarks on the challenges and opportunities in the emerging field of locally strained 2D materials are provided.
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Affiliation(s)
- Jingwei Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Liqiong He
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Yunhao Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Huiyu Nong
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Shengnan Li
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Qinke Wu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
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5
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Henríquez-Guerra E, Li H, Pasqués-Gramage P, Gosálbez-Martínez D, D’Agosta R, Castellanos-Gomez A, Calvo MR. Large Biaxial Compressive Strain Tuning of Neutral and Charged Excitons in Single-Layer Transition Metal Dichalcogenides. ACS APPLIED MATERIALS & INTERFACES 2023; 15. [PMID: 38033040 PMCID: PMC10726316 DOI: 10.1021/acsami.3c13281] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Revised: 11/16/2023] [Accepted: 11/17/2023] [Indexed: 12/02/2023]
Abstract
The absorption and emission of light in single-layer transition metal dichalcogenides are governed by the formation of excitonic quasiparticles. Strain provides a powerful technique to tune the optoelectronic properties of two-dimensional materials and thus to adjust their exciton energies. The effects of large compressive strain in the optical spectrum of two-dimensional (2D) semiconductors remain rather unexplored compared to those of tensile strain, mainly due to experimental constraints. Here, we induced large, uniform, biaxial compressive strain (∼1.2%) by cooling, down to 10 K, single-layer WS2, MoS2, WSe2, and MoSe2 deposited on polycarbonate substrates. We observed a significant strain-induced modulation of neutral exciton energies, with blue shifts up to 160 meV, larger than in any previous experiments. Our results indicate a remarkably efficient transfer of compressive strain, demonstrated by gauge factor values exceeding previous results and approaching theoretical expectations. At low temperatures, we investigated the effect of compressive strain on the resonances associated with the formation of charged excitons. In WS2, a notable reduction of gauge factors for charged compared to neutral excitons suggests an increase in their binding energy, which likely results from the effects of strain added to the influence of the polymeric substrate.
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Affiliation(s)
- Eudomar Henríquez-Guerra
- Departamento
de Física Aplicada, Universidad de
Alicante, 03690 Alicante, Spain
- Instituto
Universitario de Materiales IUMA, Universidad
de Alicante, 03690 Alicante, Spain
| | - Hao Li
- Materials
Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Madrid, Spain
| | | | - Daniel Gosálbez-Martínez
- Departamento
de Física Aplicada, Universidad de
Alicante, 03690 Alicante, Spain
- Instituto
Universitario de Materiales IUMA, Universidad
de Alicante, 03690 Alicante, Spain
| | - Roberto D’Agosta
- Nano-bio
Spectroscopy Group and European Theoretical Spectroscopy Facility
(ETSF), Departamento de Polímeros y Materiales Avanzados: Física,
Química y Tecnología, Universidad
del Pais Vasco (UPV/EHU), E-20018 San Sebastián, Spain
- IKERBASQUE, Basque
Foundation for Science, E-48013 Bilbao, Spain
| | - Andres Castellanos-Gomez
- Materials
Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Madrid, Spain
| | - M. Reyes Calvo
- Departamento
de Física Aplicada, Universidad de
Alicante, 03690 Alicante, Spain
- Instituto
Universitario de Materiales IUMA, Universidad
de Alicante, 03690 Alicante, Spain
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6
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Aftab S, Hussain S, Al-Kahtani AA. Latest Innovations in 2D Flexible Nanoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301280. [PMID: 37104492 DOI: 10.1002/adma.202301280] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Revised: 03/30/2023] [Indexed: 06/19/2023]
Abstract
2D materials with dangling-bond-free surfaces and atomically thin layers have been shown to be capable of being incorporated into flexible electronic devices. The electronic and optical properties of 2D materials can be tuned or controlled in other ways by using the intriguing strain engineering method. The latest and encouraging techniques in regard to creating flexible 2D nanoelectronics are condensed in this review. These techniques have the potential to be used in a wider range of applications in the near and long term. It is possible to use ultrathin 2D materials (graphene, BP, WTe2 , VSe2 etc.) and 2D transition metal dichalcogenides (2D TMDs) in order to enable the electrical behavior of the devices to be studied. A category of materials is produced on smaller scales by exfoliating bulk materials, whereas chemical vapor deposition (CVD) and epitaxial growth are employed on larger scales. This overview highlights two distinct requirements, which include from a single semiconductor or with van der Waals heterostructures of various nanomaterials. They include where strain must be avoided and where it is required, such as solutions to produce strain-insensitive devices, and such as pressure-sensitive outcomes, respectively. Finally, points-of-view about the current difficulties and possibilities in regard to using 2D materials in flexible electronics are provided.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, South Korea
| | - Abdullah A Al-Kahtani
- Chemistry Department, Collage of Science, King Saud University, P. O. Box 2455, Riyadh, 11451, Saudi Arabia
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Drawer JC, Mitryakhin VN, Shan H, Stephan S, Gittinger M, Lackner L, Han B, Leibeling G, Eilenberger F, Banerjee R, Tongay S, Watanabe K, Taniguchi T, Lienau C, Silies M, Anton-Solanas C, Esmann M, Schneider C. Monolayer-Based Single-Photon Source in a Liquid-Helium-Free Open Cavity Featuring 65% Brightness and Quantum Coherence. NANO LETTERS 2023; 23:8683-8689. [PMID: 37688586 PMCID: PMC10540255 DOI: 10.1021/acs.nanolett.3c02584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/11/2023]
Abstract
Solid-state single-photon sources are central building blocks in quantum information processing. Atomically thin crystals have emerged as sources of nonclassical light; however, they perform below the state-of-the-art devices based on volume crystals. Here, we implement a bright single-photon source based on an atomically thin sheet of WSe2 coupled to a tunable optical cavity in a liquid-helium-free cryostat without the further need for active stabilization. Its performance is characterized by high single-photon purity (g(2)(0) = 4.7 ± 0.7%) and record-high, first-lens brightness of linearly polarized photons of 65 ± 4%, representing a decisive step toward real-world quantum applications. The high performance of our devices allows us to observe two-photon interference in a Hong-Ou-Mandel experiment with 2% visibility limited by the emitter coherence time and setup resolution. Our results thus demonstrate that the combination of the unique properties of two-dimensional materials and versatile open cavities emerges as an inspiring avenue for novel quantum optoelectronic devices.
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Affiliation(s)
- Jens-Christian Drawer
- Institute of Physics, Carl von Ossietzky University Oldenburg, 26129 Oldenburg, Germany
| | | | - Hangyong Shan
- Institute of Physics, Carl von Ossietzky University Oldenburg, 26129 Oldenburg, Germany
| | - Sven Stephan
- Institute of Physics, Carl von Ossietzky University Oldenburg, 26129 Oldenburg, Germany
- University of Applied Sciences Emden/Leer, 26723 Emden, Germany
| | - Moritz Gittinger
- Institute of Physics, Carl von Ossietzky University Oldenburg, 26129 Oldenburg, Germany
| | - Lukas Lackner
- Institute of Physics, Carl von Ossietzky University Oldenburg, 26129 Oldenburg, Germany
| | - Bo Han
- Institute of Physics, Carl von Ossietzky University Oldenburg, 26129 Oldenburg, Germany
| | - Gilbert Leibeling
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, 07743 Jena, Germany
- Fraunhofer-Institute for Applied Optics and Precision Engineering IOF, 07743 Jena, Germany
- Max-Planck-School of Photonics, 07743 Jena, Germany
| | - Falk Eilenberger
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, 07743 Jena, Germany
- Fraunhofer-Institute for Applied Optics and Precision Engineering IOF, 07743 Jena, Germany
- Max-Planck-School of Photonics, 07743 Jena, Germany
| | - Rounak Banerjee
- Materials Science and Engineering, School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Sefaattin Tongay
- Materials Science and Engineering, School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Christoph Lienau
- Institute of Physics, Carl von Ossietzky University Oldenburg, 26129 Oldenburg, Germany
| | - Martin Silies
- University of Applied Sciences Emden/Leer, 26723 Emden, Germany
| | - Carlos Anton-Solanas
- Depto. de Física de Materiales, Instituto Nicolás Cabrera, Instituto de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Martin Esmann
- Institute of Physics, Carl von Ossietzky University Oldenburg, 26129 Oldenburg, Germany
| | - Christian Schneider
- Institute of Physics, Carl von Ossietzky University Oldenburg, 26129 Oldenburg, Germany
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8
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Abramov AN, Chestnov IY, Alimova ES, Ivanova T, Mukhin IS, Krizhanovskii DN, Shelykh IA, Iorsh IV, Kravtsov V. Photoluminescence imaging of single photon emitters within nanoscale strain profiles in monolayer WSe 2. Nat Commun 2023; 14:5737. [PMID: 37714836 PMCID: PMC10504242 DOI: 10.1038/s41467-023-41292-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Accepted: 08/29/2023] [Indexed: 09/17/2023] Open
Abstract
Local deformation of atomically thin van der Waals materials provides a powerful approach to create site-controlled chip-compatible single-photon emitters (SPEs). However, the microscopic mechanisms underlying the formation of such strain-induced SPEs are still not fully clear, which hinders further efforts in their deterministic integration with nanophotonic structures for developing practical on-chip sources of quantum light. Here we investigate SPEs with single-photon purity up to 98% created in monolayer WSe2 via nanoindentation. Using photoluminescence imaging in combination with atomic force microscopy, we locate single-photon emitting sites on a deep sub-wavelength spatial scale and reconstruct the details of the surrounding local strain potential. The obtained results suggest that the origin of the observed single-photon emission is likely related to strain-induced spectral shift of dark excitonic states and their hybridization with localized states of individual defects.
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Affiliation(s)
- Artem N Abramov
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
| | - Igor Y Chestnov
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
| | - Ekaterina S Alimova
- Peter The Great St. Petersburg Polytechnic University, Saint Petersburg, 195251, Russia
| | - Tatiana Ivanova
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
| | - Ivan S Mukhin
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
- St. Petersburg Academic University, Saint Petersburg, 194021, Russia
| | | | - Ivan A Shelykh
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
- Science Institute, University of Iceland, Dunhagi-3, IS-107, Reykjavik, Iceland
- Abrikosov Center for Theoretical Physics, MIPT, Dolgoprudnyi, Moscow Region, 141701, Russia
- Russian Quantum Center, Skolkovo, Moscow, 143025, Russia
| | - Ivan V Iorsh
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
- Abrikosov Center for Theoretical Physics, MIPT, Dolgoprudnyi, Moscow Region, 141701, Russia
- Russian Quantum Center, Skolkovo, Moscow, 143025, Russia
| | - Vasily Kravtsov
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia.
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9
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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10
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Fan P, Chen H, Zhou X, Cao L, Li G, Li M, Qian G, Xing Y, Shen C, Wang X, Jin C, Gu G, Ding H, Gao HJ. Nanoscale Manipulation of Wrinkle-Pinned Vortices in Iron-Based Superconductors. NANO LETTERS 2023; 23:4541-4547. [PMID: 37162755 DOI: 10.1021/acs.nanolett.3c00982] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
The controlled manipulation of Abrikosov vortices is essential for both fundamental science and logical applications. However, achieving nanoscale manipulation of vortices while simultaneously measuring the local density of states within them remains challenging. Here, we demonstrate the manipulation of Abrikosov vortices by moving the pinning center, namely one-dimensional wrinkles, on the terminal layers of Fe(Te,Se) and LiFeAs, by utilizing low-temperature scanning tunneling microscopy/spectroscopy (STM/S). The wrinkles trap the Abrikosov vortices induced by the external magnetic field. In some of the wrinkle-pinned vortices, robust zero-bias conductance peaks are observed. We tailor the wrinkle into short pieces and manipulate the wrinkles by using an STM tip. Strikingly, we demonstrate that the pinned vortices move together with these wrinkles even at high magnetic field up to 6 T. Our results provide a universal and effective routine for manipulating wrinkle-pinned vortices and simultaneously measuring the local density of states on the iron-based superconductor surfaces.
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Affiliation(s)
- Peng Fan
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Hui Chen
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Hefei National Laboratory, Hefei, Anhui 230088, P. R. China
| | - Xingtai Zhou
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Lu Cao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Geng Li
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Hefei National Laboratory, Hefei, Anhui 230088, P. R. China
| | - Meng Li
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Guojian Qian
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yuqing Xing
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Chengmin Shen
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Xiancheng Wang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Changqing Jin
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Genda Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Hong Ding
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Hong-Jun Gao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Hefei National Laboratory, Hefei, Anhui 230088, P. R. China
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11
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Zheng H, Wu B, Li S, He J, Liu Z, Wang CT, Wang JT, Duan JA, Liu Y. Strain-tunable valley polarization and localized excitons in monolayer WSe 2. OPTICS LETTERS 2023; 48:2393-2396. [PMID: 37126281 DOI: 10.1364/ol.487201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDs) have a crystalline structure with broken spatial inversion symmetry, making them promising candidates for valleytronic applications. However, the degree of valley polarization is usually not high due to the presence of intervalley scattering. Here, we use the nanoindentation technique to fabricate strained structures of WSe2 on Au arrays, thus demonstrating the generation and detection of strained localized excitons in monolayer WSe2. Enhanced emission of strain-localized excitons was observed as two sharp photoluminescence (PL) peaks measured using low-temperature PL spectroscopy. We attribute these emerging sharp peaks to excitons trapped in potential wells formed by local strains. Furthermore, the valley polarization of monolayer WSe2 is modulated by a magnetic field, and the valley polarization of strained localized excitons is increased, with a high value of up to approximately 79.6%. Our results show that tunable valley polarization and localized excitons can be realized in WSe2 monolayers, which may be useful for valleytronic applications.
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12
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Kim Y, Joo HJ, Chen M, Son B, Burt D, Shi X, Zhang L, Ikonic Z, Tan CS, Nam D. High-Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2207611. [PMID: 37072675 DOI: 10.1002/advs.202207611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Revised: 03/09/2023] [Indexed: 05/03/2023]
Abstract
The technology to develop a large number of identical coherent light sources on an integrated photonics platform holds the key to the realization of scalable optical and quantum photonic circuits. Herein, a scalable technique is presented to produce identical on-chip lasers by dynamically controlled strain engineering. By using localized laser annealing that can control the strain in the laser gain medium, the emission wavelengths of several GeSn one-dimensional photonic crystal nanobeam lasers are precisely matched whose initial emission wavelengths are significantly varied. The method changes the GeSn crystal structure in a region far away from the gain medium by inducing Sn segregation in a dynamically controllable manner, enabling the emission wavelength tuning of more than 10 nm without degrading the laser emission properties such as intensity and linewidth. The authors believe that the work presents a new possibility to scale up the number of identical light sources for the realization of large-scale photonic-integrated circuits.
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Affiliation(s)
- Youngmin Kim
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Hyo-Jun Joo
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Melvina Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Bongkwon Son
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Daniel Burt
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Xuncheng Shi
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Lin Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zoran Ikonic
- School of Electronic and Electrical Engineering, University of Leeds, Leeds, LS2 9JT, UK
| | - Chuan Seng Tan
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Donguk Nam
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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13
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Lei Y, Zhang T, Lin YC, Granzier-Nakajima T, Bepete G, Kowalczyk DA, Lin Z, Zhou D, Schranghamer TF, Dodda A, Sebastian A, Chen Y, Liu Y, Pourtois G, Kempa TJ, Schuler B, Edmonds MT, Quek SY, Wurstbauer U, Wu SM, Glavin NR, Das S, Dash SP, Redwing JM, Robinson JA, Terrones M. Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices. ACS NANOSCIENCE AU 2022; 2:450-485. [PMID: 36573124 PMCID: PMC9782807 DOI: 10.1021/acsnanoscienceau.2c00017] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 08/22/2022] [Accepted: 08/23/2022] [Indexed: 12/30/2022]
Abstract
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.
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Affiliation(s)
- Yu Lei
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Institute
of Materials Research, Tsinghua Shenzhen
International Graduate School, Shenzhen, Guangdong 518055, China,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tianyi Zhang
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tomotaroh Granzier-Nakajima
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - George Bepete
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Dorota A. Kowalczyk
- Department
of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, Lodz 90-236, Poland
| | - Zhong Lin
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Da Zhou
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Thomas F. Schranghamer
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Akhil Dodda
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Amritanand Sebastian
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Yifeng Chen
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Yuanyue Liu
- Texas
Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | | | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21287, United States
| | - Bruno Schuler
- nanotech@surfaces
Laboratory, Empa − Swiss Federal
Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Mark T. Edmonds
- School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Su Ying Quek
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Ursula Wurstbauer
- Institute
of Physics, University of Münster, Wilhelm-Klemm-Str. 10, Münster 48149, Germany
| | - Stephen M. Wu
- Department
of Electrical and Computer Engineering & Department of Physics
and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Nicholas R. Glavin
- Air
Force
Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Dayton, Ohio 45433, United States
| | - Saptarshi Das
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Saroj Prasad Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Göteborg SE-412 96, Sweden
| | - Joan M. Redwing
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A. Robinson
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,
| | - Mauricio Terrones
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Research
Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, 4-17-1Wakasato, Nagano 380-8553, Japan,
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14
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Kosarev IV, Dmitriev SV, Semenov AS, Korznikova EA. Stability of Strained Stanene Compared to That of Graphene. MATERIALS (BASEL, SWITZERLAND) 2022; 15:5900. [PMID: 36079279 PMCID: PMC9457046 DOI: 10.3390/ma15175900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/21/2022] [Revised: 08/18/2022] [Accepted: 08/22/2022] [Indexed: 06/15/2023]
Abstract
Stanene, composed of tin atoms, is a member of 2D-Xenes, two-dimensional single element materials. The properties of the stanene can be changed and improved by applying deformation, and it is important to know the range of in-plane deformation that the stanene can withstand. Using the Tersoff interatomic potential for calculation of phonon frequencies, the range of stability of planar stanene under uniform in-plane deformation is analyzed and compared with the known data for graphene. Unlike atomically flat graphene, stanene has a certain thickness (buckling height). It is shown that as the tensile strain increases, the thickness of the buckled stanene decreases, and when a certain tensile strain is reached, the stanene becomes absolutely flat, like graphene. Postcritical behaviour of stanene depends on the type of applied strain: critical tensile strain leads to breaking of interatomic bonds and critical in-plane compressive strain leads to rippling of stanene. It is demonstrated that application of shear strain reduces the range of stability of stanene. The existence of two energetically equivalent states of stanene is shown, and consequently, the possibility of the formation of domains separated by domain walls in the stanene is predicted.
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Affiliation(s)
- Igor V. Kosarev
- Research Laboratory for Metals and Alloys under Extreme Impacts, Ufa State Aviation Technical University, 450008 Ufa, Russia
| | - Sergey V. Dmitriev
- Mechanical Engineering Research Institute of the Russian Academy of Sciences–Branch of Federal Research Center “Institute of Applied Physics of RAS”, 603024 Nizhny Novgorod, Russia
- Center for Design of Functional Materials, Bashkir State University, 450076 Ufa, Russia
| | - Alexander S. Semenov
- Polytechnic Institute Mirny Branch, North-Eastern Federal University, 678170 Mirny, Russia
| | - Elena A. Korznikova
- Institute of Oil and Gas Engineering and Digital Technologies, Ufa State Petroleum Technological University, 450064 Ufa, Russia
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15
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Jiang J, Pachter R. Analysis of localized excitons in strained monolayer WSe 2 by first principles calculations. NANOSCALE 2022; 14:11378-11387. [PMID: 35899773 DOI: 10.1039/d2nr02746a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Although there is growing interest in enhancement of single-photon emission (SPE) in two-dimensional transition metal dichalcogenides, particularly when introducing strain by the generation of wrinkles in monolayer WSe2, understanding the effects of the wrinkle type on the response has been lacking. In this work, by investigating the electronic and optical properties of monolayer WSe2 with wrinkles by first principles calculations, we gain insight into the tunability of the response, where the band gap is found to be modulated by the wrinkle type. Our detailed analyses of the local electronic structures show that the strain distribution from regions with different local strain magnitudes and types affect the band alignments. We demonstrate that introducing a wrinkle in the monolayer results in a red-shift, including the bright A exciton and the lowest energy dark exciton, and the dependence on strain is consistent with available measurements. The energy difference between the A exciton and the lowest mid-gap energy for a single Se vacancy in the wrinkled WSe2 monolayer as a function of strain is consistent with a suggestion on the origin of SPE in monolayer WSe2. Our results will encourage engineering of wrinkle types for enhanced SPE at specific wavelengths, which could potentially originate from hybridization of the localized strained dark exciton and a mid-gap point-defect exciton.
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Affiliation(s)
- Jie Jiang
- Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433, USA.
| | - Ruth Pachter
- Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433, USA.
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16
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Li S, Chui KK, Shen F, Huang H, Wen S, Yam C, Shao L, Xu J, Wang J. Generation and Detection of Strain-Localized Excitons in WS 2 Monolayer by Plasmonic Metal Nanocrystals. ACS NANO 2022; 16:10647-10656. [PMID: 35816169 DOI: 10.1021/acsnano.2c02300] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Excitons in a transition-metal dichalcogenide (TMDC) monolayer can be modulated through strain with spatial and spectral control, which offers opportunities for constructing quantum emitters for applications in on-chip quantum communication and information processing. Strain-localized excitons in TMDC monolayers have so far mainly been observed under cryogenic conditions because of their subwavelength emission area, low quantum yield, and thermal-fluctuation-induced delocalization. Herein, we demonstrate both generation and detection of strain-localized excitons in WS2 monolayer through a simple plasmonic structure design, where WS2 monolayer covers individual Au nanodisks or nanorods. Enhanced emission from the strain-localized excitons of the deformed WS2 monolayer near the plasmonic hotspots is observed at room temperature with a photoluminescence energy redshift up to 200 meV. The emission intensity and peak energy of the strain-localized excitons can be adjusted by the nanodisk size. Furthermore, the excitation and emission polarization of the strain-localized excitons are modulated by anisotropic Au nanorods. Our results provide a promising strategy for constructing nonclassical integrated light sources, high-sensitivity strain sensors, or tunable nanolasers for future dense nanophotonic integrated circuits.
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Affiliation(s)
- Shasha Li
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Ka Kit Chui
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR
| | - Fuhuan Shen
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong SAR
| | - He Huang
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR
| | - Shizheng Wen
- Beijing Computational Science Research Center, Beijing 100193, China
| | - ChiYung Yam
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Lei Shao
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Jianbin Xu
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong SAR
| | - Jianfang Wang
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR
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17
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Rahman S, Lu Y. Nano-engineering and nano-manufacturing in 2D materials: marvels of nanotechnology. NANOSCALE HORIZONS 2022; 7:849-872. [PMID: 35758316 DOI: 10.1039/d2nh00226d] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional materials have attracted significant interest and investigation since the marvellous discovery of graphene. Due to their unique physical, mechanical and optical properties, van der Waals (vdW) materials possess extraordinary potential for application in future optoelectronics devices. Nano-engineering and nano-manufacturing in the atomically thin regime has further opened multifarious avenues to explore novel physical properties. Among them, moiré heterostructures, strain engineering and substrate manipulation have created numerous exotic and topological phenomena such as unconventional superconductivity, orbital magnetism, flexible nanoelectronics and highly efficient photovoltaics. This review comprehensively summarizes the three most influential techniques of nano-engineering in 2D materials. The latest development in the marvels of moiré structures in vdW materials is discussed; in addition, topological structures in layered materials and substrate engineering on the nanoscale are thoroughly scrutinized to highlight their significance in micro- and nano-devices. Finally, we conclude with remarks on challenges and possible future directions in the rapidly expanding field of nanotechnology and nanomaterial.
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Affiliation(s)
- Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia.
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia.
- ARC Centre for Quantum Computation and Communication Technology, Department of Quantum Science, School of Engineering, The Australian National University, Acton, ACT 2601, Australia.
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18
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Strain engineering of electronic properties and anomalous valley hall conductivity of transition metal dichalcogenide nanoribbons. Sci Rep 2022; 12:11285. [PMID: 35788139 PMCID: PMC9253103 DOI: 10.1038/s41598-022-13398-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2022] [Accepted: 05/24/2022] [Indexed: 12/02/2022] Open
Abstract
Strain engineering is a powerful technique for tuning electronic properties and valley degree of freedom in honeycomb structure of two-dimensional crystals. Carriers in + k and − k (opposite Berry curvature) in transition metal dichalcogenide (TMD) with broken inversion symmetry act as effective magnetic fields, where this polarized valleys are suitable for encoding information. In this work, we study the strained TMD nanoribbons by Slater-Koster tight-binding model, which acquires electronic bands in whole Brillouin zone. From this, we derive a generic profile of strain effect on the electronic band structure of TMD nanoribbons, which shows indirect band gap, and also exhibits a phase transition from semiconductor to metallic by applying uniaxial X-tensile and Y-arc type of strain. Midgap states in strained TMD nanoribbons are determined by calculation of localized density of electron states. Moreover, our findings of anomalous valley Hall conductivity reveal that the creation of pseudogauge fields using strained TMD nanoribbons affect the Dirac electrons, which generate the new quantized Landau level. Furthermore, we demonstrate in strained TMD nanoribbons that strain field can effectively tune both the magnitude and sign of valley Hall conductivity. Our work elucidates the valley Hall transport in strained TMDs due to pseudo-electric and pseudo-magnetic filed will be applicable as information carries for future electronics and valleytronics.
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19
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Akkanen STM, Fernandez HA, Sun Z. Optical Modification of 2D Materials: Methods and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2110152. [PMID: 35139583 DOI: 10.1002/adma.202110152] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Revised: 01/24/2022] [Indexed: 06/14/2023]
Abstract
2D materials are under extensive research due to their remarkable properties suitable for various optoelectronic, photonic, and biological applications, yet their conventional fabrication methods are typically harsh and cost-ineffective. Optical modification is demonstrated as an effective and scalable method for accurate and local in situ engineering and patterning of 2D materials in ambient conditions. This review focuses on the state of the art of optical modification of 2D materials and their applications. Perspectives for future developments in this field are also discussed, including novel laser tools, new optical modification strategies, and their emerging applications in quantum technologies and biotechnologies.
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Affiliation(s)
| | - Henry Alexander Fernandez
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, 02150, Finland
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, 02150, Finland
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20
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Yang X, Wu R, Zheng B, Luo Z, You W, Liu H, Li L, Zhang Y, Tan Q, Liang D, Chen Y, Qu J, Yi X, Wang X, Zhou J, Duan H, Wang S, Chen S, Pan A. A Waveguide-Integrated Two-Dimensional Light-Emitting Diode Based on p-Type WSe 2/n-Type CdS Nanoribbon Heterojunction. ACS NANO 2022; 16:4371-4378. [PMID: 35191308 DOI: 10.1021/acsnano.1c10607] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Transition metal dichalcogenides (TMDs) have emerged as two-dimensional (2D) building blocks to construct nanoscale light sources. To date, a wide array of TMD-based light-emitting devices (LEDs) have been successfully demonstrated. Yet, their atomically thin and planar nature entails an additional waveguide/microcavity for effective optical routing/confinement. In this sense, integration of TMDs with electronically active photonic nanostructures to form a functional heterojunction is of crucial importance for 2D optoelectronic chips with reduced footprint and higher integration capacity. Here, we report a room-temperature waveguide-integrated light-emitting device based on a p-type monolayer (ML) tungsten diselenide (WSe2) and n-type cadmium sulfide (CdS) nanoribbon (NR) heterojunction diode. The hybrid LED exhibited clear rectification under forward biasing, giving pronounced electroluminescence (EL) at 1.65 eV from exciton resonances in ML WSe2. The integrated EL intensity against the driving current shows a superlinear profile at a high current level, implying a facilitated carrier injection via intervalley scattering. By leveraging CdS NR waveguides, the WSe2 EL can be efficiently coupled and further routed for potential optical interconnect functionalities. Our results manifest the waveguided LEDs as a dual-role module for TMD-based optoelectronic circuitries.
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Affiliation(s)
- Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Rong Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Wenxia You
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Lihui Li
- College of Physics and Electronics, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Qin Tan
- College of Physics and Electronics, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Delang Liang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Junyu Qu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Xiao Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Xingjun Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Jun Zhou
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, Hubei, People's Republic of China
| | - Huigao Duan
- College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, China
| | - Shuangyin Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
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21
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Jia L, Wu J, Zhang Y, Qu Y, Jia B, Chen Z, Moss DJ. Fabrication Technologies for the On-Chip Integration of 2D Materials. SMALL METHODS 2022; 6:e2101435. [PMID: 34994111 DOI: 10.1002/smtd.202101435] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 12/12/2021] [Indexed: 06/14/2023]
Abstract
With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in 2D layered materials with their unique structures and distinctive properties have motivated their on-chip integration, yielding a variety of functional devices with superior performance and new features. To realize integrated devices incorporating 2D materials, it requires a diverse range of device fabrication techniques, which are of fundamental importance to achieve good performance and high reproducibility. This paper reviews the state-of-art fabrication techniques for the on-chip integration of 2D materials. First, an overview of the material properties and on-chip applications of 2D materials is provided. Second, different approaches used for integrating 2D materials on chips are comprehensively reviewed, which are categorized into material synthesis, on-chip transfer, film patterning, and property tuning/modification. Third, the methods for integrating 2D van der Waals heterostructures are also discussed and summarized. Finally, the current challenges and future perspectives are highlighted.
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Affiliation(s)
- Linnan Jia
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Jiayang Wu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yuning Zhang
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yang Qu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Baohua Jia
- Centre for Translational Atomaterials, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Zhigang Chen
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300457, China
- Department of Physics and Astronomy, San Francisco State University, San Francisco, CA, 94132, USA
| | - David J Moss
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
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22
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Tan Q, Lai JM, Liu XL, Guo D, Xue Y, Dou X, Sun BQ, Deng HX, Tan PH, Aharonovich I, Gao W, Zhang J. Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:1331-1337. [PMID: 35073101 DOI: 10.1021/acs.nanolett.1c04647] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and stability and the possibility of a spin-photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here we report dense SPEs in hBN across the entire visible spectrum and present evidence that most of these SPEs can be well explained by donor-acceptor pairs (DAPs). On the basis of the DAP transition generation mechanism, we calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies.
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Affiliation(s)
- Qinghai Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Jia-Min Lai
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xue-Lu Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dan Guo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongzhou Xue
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiuming Dou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bao-Quan Sun
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science University of Technology Sydney, New South Wales 2007, Australia
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 101408, China
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23
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Kim JM, Haque MF, Hsieh EY, Nahid SM, Zarin I, Jeong KY, So JP, Park HG, Nam S. Strain Engineering of Low-Dimensional Materials for Emerging Quantum Phenomena and Functionalities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021:e2107362. [PMID: 34866241 DOI: 10.1002/adma.202107362] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2021] [Revised: 11/11/2021] [Indexed: 06/13/2023]
Abstract
Recent discoveries of exotic physical phenomena, such as unconventional superconductivity in magic-angle twisted bilayer graphene, dissipationless Dirac fermions in topological insulators, and quantum spin liquids, have triggered tremendous interest in quantum materials. The macroscopic revelation of quantum mechanical effects in quantum materials is associated with strong electron-electron correlations in the lattice, particularly where materials have reduced dimensionality. Owing to the strong correlations and confined geometry, altering atomic spacing and crystal symmetry via strain has emerged as an effective and versatile pathway for perturbing the subtle equilibrium of quantum states. This review highlights recent advances in strain-tunable quantum phenomena and functionalities, with particular focus on low-dimensional quantum materials. Experimental strategies for strain engineering are first discussed in terms of heterogeneity and elastic reconfigurability of strain distribution. The nontrivial quantum properties of several strain-quantum coupled platforms, including 2D van der Waals materials and heterostructures, topological insulators, superconducting oxides, and metal halide perovskites, are next outlined, with current challenges and future opportunities in quantum straintronics followed. Overall, strain engineering of quantum phenomena and functionalities is a rich field for fundamental research of many-body interactions and holds substantial promise for next-generation electronics capable of ultrafast, dissipationless, and secure information processing and communications.
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Affiliation(s)
- Jin Myung Kim
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Md Farhadul Haque
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Ezekiel Y Hsieh
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Shahriar Muhammad Nahid
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Ishrat Zarin
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Kwang-Yong Jeong
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
- Department of Physics, Jeju National University, Jeju, 63243, Republic of Korea
| | - Jae-Pil So
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
- Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science, Seoul, 02841, Republic of Korea
| | - SungWoo Nam
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
- Department of Mechanical and Aerospace Engineering, University of California Irvine, Irvine, CA, 92697, USA
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24
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Wang Q, Maisch J, Tang F, Zhao D, Yang S, Joos R, Portalupi SL, Michler P, Smet JH. Highly Polarized Single Photons from Strain-Induced Quasi-1D Localized Excitons in WSe 2. NANO LETTERS 2021; 21:7175-7182. [PMID: 34424710 PMCID: PMC8431731 DOI: 10.1021/acs.nanolett.1c01927] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 08/13/2021] [Indexed: 05/31/2023]
Abstract
Single photon emission from localized excitons in two-dimensional (2D) materials has been extensively investigated because of its relevance for quantum information applications. Prerequisites are the availability of photons with high purity polarization and controllable polarization orientation that can be integrated with optical cavities. Here, deformation strain along edges of prepatterned square-shaped substrate protrusions is exploited to induce quasi-one-dimensional (1D) localized excitons in WSe2 monolayers as an elegant way to get photons that fulfill these requirements. At zero magnetic field, the emission is linearly polarized with 95% purity because exciton states are valley hybridized with equal shares of both valleys and predominant emission from excitons with a dipole moment along the elongated direction. In a strong field, one valley is favored and the linear polarization is converted to high-purity circular polarization. This deterministic control over polarization purity and orientation is a valuable asset in the context of integrated quantum photonics.
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Affiliation(s)
- Qixing Wang
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Julian Maisch
- Institut
für Halbleiteroptik und Funktionelle Grenzflächen, Center
for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart D-70569, Germany
| | - Fangdong Tang
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Dong Zhao
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Sheng Yang
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Raphael Joos
- Institut
für Halbleiteroptik und Funktionelle Grenzflächen, Center
for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart D-70569, Germany
| | - Simone Luca Portalupi
- Institut
für Halbleiteroptik und Funktionelle Grenzflächen, Center
for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart D-70569, Germany
| | - Peter Michler
- Institut
für Halbleiteroptik und Funktionelle Grenzflächen, Center
for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart D-70569, Germany
| | - Jurgen H. Smet
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
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25
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Anantharaman SB, Jo K, Jariwala D. Exciton-Photonics: From Fundamental Science to Applications. ACS NANO 2021; 15:12628-12654. [PMID: 34310122 DOI: 10.1021/acsnano.1c02204] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Semiconductors in all dimensionalities ranging from 0D quantum dots and molecules to 3D bulk crystals support bound electron-hole pair quasiparticles termed excitons. Over the past two decades, the emergence of a variety of low-dimensional semiconductors that support excitons combined with advances in nano-optics and photonics has burgeoned an advanced area of research that focuses on engineering, imaging, and modulating the coupling between excitons and photons, resulting in the formation of hybrid quasiparticles termed exciton-polaritons. This advanced area has the potential to bring about a paradigm shift in quantum optics, as well as classical optoelectronic devices. Here, we present a review on the coupling of light in excitonic semiconductors and previous investigations of the optical properties of these hybrid quasiparticles via both far-field and near-field imaging and spectroscopy techniques. Special emphasis is given to recent advances with critical evaluation of the bottlenecks that plague various materials toward practical device implementations including quantum light sources. Our review highlights a growing need for excitonic material development together with optical engineering and imaging techniques to harness the utility of excitons and their host materials for a variety of applications.
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Affiliation(s)
- Surendra B Anantharaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Kiyoung Jo
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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26
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Wang P, Jin C, Zheng D, Yang T, Wang Y, Zheng R, Bai H. Engineering Co Vacancies for Tuning Electrical Properties of p-Type Semiconducting Co 3O 4 Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:26621-26629. [PMID: 34038070 DOI: 10.1021/acsami.1c05748] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Spinel oxide Co3O4 has attracted more and more attention for energy- and environment-related applications. In order to tune the electrical properties of Co3O4, p-type semiconducting Co3O4 films were fabricated on the Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT), MgAl2O4 (MAO), and SrTiO3 substrates by reactive magnetron sputtering. The Co3O4 film on the MAO substrate exhibits perfect epitaxial growth. However, the Co3O4 film on the PMN-PT substrate presents dislocation defects between the [011] and [112] orientations. The special ferroelectric domain shape surface and phase transition of the PMN-PT substrate induce the higher concentration of Co vacancies in the Co3O4 film, which further reduce the resistivity by several orders of magnitude. The calculated results indicate that introducing Co vacancies can enhance the electrical properties of Co3O4 by building impurity levels near the Fermi level, which is beneficial to form free-moving holes in the valence band. The free-moving holes can also be accumulated/dissipated by the ferroelectric field effect of PMN-PT substrates, leading to upward/downward bending of conduction, valence bands, and low/high-resistance states. This work helps us to tune and improve the electrical properties of Co3O4.
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Affiliation(s)
- Ping Wang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China
| | - Chao Jin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China
| | - Dongxing Zheng
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China
| | - Tiebin Yang
- School of Physics, Australian Centre for Microscopy and Microanalysis, The University of Sydney, Camperdown, New South Wales 2006, Australia
| | - Yuchen Wang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China
| | - Rongkun Zheng
- School of Physics, Australian Centre for Microscopy and Microanalysis, The University of Sydney, Camperdown, New South Wales 2006, Australia
| | - Haili Bai
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China
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27
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Iff O, Buchinger Q, Moczała-Dusanowska M, Kamp M, Betzold S, Davanco M, Srinivasan K, Tongay S, Antón-Solanas C, Höfling S, Schneider C. Purcell-Enhanced Single Photon Source Based on a Deterministically Placed WSe 2 Monolayer Quantum Dot in a Circular Bragg Grating Cavity. NANO LETTERS 2021; 21:4715-4720. [PMID: 34048254 PMCID: PMC10573669 DOI: 10.1021/acs.nanolett.1c00978] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We demonstrate a deterministic Purcell-enhanced single photon source realized by integrating an atomically thin WSe2 layer with a circular Bragg grating cavity. The cavity significantly enhances the photoluminescence from the atomically thin layer and supports single photon generation with g(2)(0) < 0.25. We observe a consistent increase of the spontaneous emission rate for WSe2 emitters located in the center of the Bragg grating cavity. These WSe2 emitters are self-aligned and deterministically coupled to such a broadband cavity, configuring a new generation of deterministic single photon sources, characterized by their simple and low-cost production and intrinsic scalability.
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Affiliation(s)
- Oliver Iff
- Technische Physik, Physikalische Institut and Wilhelm Conrad Röntgen-Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
| | - Quirin Buchinger
- Technische Physik, Physikalische Institut and Wilhelm Conrad Röntgen-Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
| | - Magdalena Moczała-Dusanowska
- Technische Physik, Physikalische Institut and Wilhelm Conrad Röntgen-Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
| | - Martin Kamp
- Technische Physik, Physikalische Institut and Wilhelm Conrad Röntgen-Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
| | - Simon Betzold
- Technische Physik, Physikalische Institut and Wilhelm Conrad Röntgen-Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
| | - Marcelo Davanco
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Kartik Srinivasan
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
- Joint Quantum Institute, NIST/University of Maryland, College Park, Maryland 20899, United States
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287, USA
| | | | - Sven Höfling
- Technische Physik, Physikalische Institut and Wilhelm Conrad Röntgen-Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
| | - Christian Schneider
- Technische Physik, Physikalische Institut and Wilhelm Conrad Röntgen-Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
- Institute of Physics, University of Oldenburg, D-26129 Oldenburg, Germany
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28
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Wang J, Han M, Wang Q, Ji Y, Zhang X, Shi R, Wu Z, Zhang L, Amini A, Guo L, Wang N, Lin J, Cheng C. Strained Epitaxy of Monolayer Transition Metal Dichalcogenides for Wrinkle Arrays. ACS NANO 2021; 15:6633-6644. [PMID: 33819027 DOI: 10.1021/acsnano.0c09983] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Wrinkling two-dimensional (2D) transition metal dichalcogenides (TMDCs) provides a mechanism to adjust the physical and chemical properties as per need. Traditionally, TMDCs wrinkles achieved by transferring exfoliated materials on prestretched polymer suffer from poor control and limited sample area, which significantly hinders desirable applications. Herein, we fabricate large-area monolayer TMDCs wrinkle arrays directly on the m-quartz substrate using strained epitaxy. The uniaxial thermal expansion coefficient mismatch between the substrate and TMDCs materials enables the generation of large uniaxial thermal strain. By quenching the TMDCs after growth, this uniaxial thermal strain can be quickly released as a form of wrinkle arrays along the [0001]quartz direction. Using WS2 as a model system, the size of as-grown wrinkles can be finely modulated within sub-100 nm by changing the quenching temperature. These WS2 wrinkles can be locally folded and form various multilayer structures with odd layer numbers during the transfer process. Besides, the corrugated structures in WS2 wrinkles induce significant changes to optical properties including anisotropic Raman response, enhanced photoluminescence, and second harmonic generation emissions. Furthermore, these wrinkle arrays exhibit enhanced chemical reactivity that can be selectively engineered to ribbon arrays with improved electrocatalytic performance. The developed strategy of strained epitaxy here should enable flexibility in the design of more sophisticated 2D-based structures, offering a simple but effective way toward the modulation of properties with enhanced performances.
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Affiliation(s)
- Jingwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Mengjiao Han
- Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Qun Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Yaqiang Ji
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Xian Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Zefei Wu
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Liang Zhang
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University, Kingswood, NSW 2751, Australia
| | - Liang Guo
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Ning Wang
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
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29
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DiStefano JG, Murthy AA, Hao S, Dos Reis R, Wolverton C, Dravid VP. Topology of transition metal dichalcogenides: the case of the core-shell architecture. NANOSCALE 2020; 12:23897-23919. [PMID: 33295919 DOI: 10.1039/d0nr06660e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Non-planar architectures of the traditionally flat 2D materials are emerging as an intriguing paradigm to realize nascent properties within the family of transition metal dichalcogenides (TMDs). These non-planar forms encompass a diversity of curvatures, morphologies, and overall 3D architectures that exhibit unusual characteristics across the hierarchy of length-scales. Topology offers an integrated and unified approach to describe, harness, and eventually tailor non-planar architectures through both local and higher order geometry. Topological design of layered materials intrinsically invokes elements highly relevant to property manipulation in TMDs, such as the origin of strain and its accommodation by defects and interfaces, which have broad implications for improved material design. In this review, we discuss the importance and impact of geometry on the structure and properties of TMDs. We present a generalized geometric framework to classify and relate the diversity of possible non-planar TMD forms. We then examine the nature of curvature in the emerging core-shell architecture, which has attracted high interest due to its versatility and design potential. We consider the local structure of curved TMDs, including defect formation, strain, and crystal growth dynamics, and factors affecting the morphology of core-shell structures, such as synthesis conditions and substrate morphology. We conclude by discussing unique aspects of TMD architectures that can be leveraged to engineer targeted, exotic properties and detail how advanced characterization tools enable detection of these features. Varying the topology of nanomaterials has long served as a potent methodology to engineer unusual and exotic properties, and the time is ripe to apply topological design principles to TMDs to drive future nanotechnology innovation.
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Affiliation(s)
- Jennifer G DiStefano
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
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30
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Wang C, Yang F, Gao Y. The highly-efficient light-emitting diodes based on transition metal dichalcogenides: from architecture to performance. NANOSCALE ADVANCES 2020; 2:4323-4340. [PMID: 36132931 PMCID: PMC9418884 DOI: 10.1039/d0na00501k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2020] [Accepted: 07/17/2020] [Indexed: 05/28/2023]
Abstract
Transition metal dichalcogenides (TMDCs) with layered architecture and excellent optoelectronic properties have been a hot spot for light-emitting diodes (LED). However, the light-emitting efficiency of TMDC LEDs is still low due to the large size limit of TMDC flakes and the inefficient device architecture. First and foremost, to develop the highly-efficient and reliable few-layer TMDC LEDs, the modulation of the electronic properties of TMDCs and TMDC heterostructures is necessary. In order to create efficient TMDC LEDs with prominent performance, an in-depth understanding of the working mechanism is needed. Besides conventional structures, the electric (or ionic liquid)-induced p-n junction of TMDCs is a useful configuration for multifunctional LED applications. The significant performances are contrasted in the four aspects of color, polarity, and external quantum efficiency. The color of light ranging from infrared to visible light can be acquired from TMDC LEDs by purposeful and selective architecture construction. To date, the maximum of the external quantum efficiency achieved by TMDC LEDs is 12%. In the demand for performance, the material and configuration of the nano device can be chosen according to this review. Moreover, novel electroluminescence devices involving single-photon emitters and alternative pulsed light emitters can expand their application scope. In this review, we provide an overview of the significant investigations that have provided a wealth of detailed information on TMDC electroluminescence devices at the molecular level.
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Affiliation(s)
- Caiyun Wang
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics, Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Fuchao Yang
- Hubei Collaborative Innovation Centre for Advanced Organic Chemical Materials, Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University Wuhan 430062 China
| | - Yihua Gao
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics, Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
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31
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Peng L, Chan H, Choo P, Odom TW, Sankaranarayanan SKRS, Ma X. Creation of Single-Photon Emitters in WSe 2 Monolayers Using Nanometer-Sized Gold Tips. NANO LETTERS 2020; 20:5866-5872. [PMID: 32644800 DOI: 10.1021/acs.nanolett.0c01789] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Due to their tunable bandgaps and strong spin-valley locking, transition metal dichalcogenides constitute a unique platform for hosting single-photon emitters. Here, we present a versatile approach for creating bright single-photon emitters in WSe2 monolayers by the deposition of gold nanostars. Our molecular dynamics simulations reveal that the formation of the quantum emitters is likely caused by the highly localized strain fields created by the sharp tips of the gold nanostars. The surface plasmon modes supported by the gold nanostars can change the local electromagnetic fields in the vicinity of the quantum emitters, leading to their enhanced emission intensities. Moreover, by correlating the emission energies and intensities of the quantum emitters, we are able to associate them with two types of strain fields and derive the existence of a low-lying dark state in their electronic structures. Our findings are highly relevant for the development and understanding of single-photon emitters in transition metal dichalcogenide materials.
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Affiliation(s)
- Lintao Peng
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Henry Chan
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Priscilla Choo
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Teri W Odom
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Subramanian K R S Sankaranarayanan
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Mechanical and Industrial Engineering, University of Illinois, Chicago, Illinois 60607, United States
| | - Xuedan Ma
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
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32
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Luo Y, Liu N, Kim B, Hone J, Strauf S. Exciton Dipole Orientation of Strain-Induced Quantum Emitters in WSe 2. NANO LETTERS 2020; 20:5119-5126. [PMID: 32551697 DOI: 10.1021/acs.nanolett.0c01358] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Transition metal dichalcogenides are promising semiconductors to enable advances in photonics and electronics and have also been considered as a host for quantum emitters. Particularly, recent advances demonstrate site-controlled quantum emitters in WSe2 through strain deformation. Albeit essential for device integration, the dipole orientation of these strain-induced quantum emitters remains unknown. Here we employ angular-resolved spectroscopy to experimentally determine the dipole orientation of strain-induced quantum emitters. It is found that with increasing local strain the quantum emitters in WSe2 undergo a transition from in-plane to out-of-plane dipole orientation if their emission wavelength is longer than 750 nm. In addition, the exciton g-factor remains with average values of g = 8.52 ± 1.2 unchanged in the entire emission wavelength. These findings provide experimental support of the interlayer defect exciton model and highlight the importance of an underlying three-dimensional strain profile of deformed monolayer semiconductors, which is essential to optimize emitter-mode coupling in nanoplasmonics.
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Affiliation(s)
- Yue Luo
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
- Center for Nanoscale Systems, Harvard University, Cambridge, Massachusetts 02138, United States
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Na Liu
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
| | - Bumho Kim
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Stefan Strauf
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
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33
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Ryu YK, Carrascoso F, López-Nebreda R, Agraït N, Frisenda R, Castellanos-Gomez A. Microheater Actuators as a Versatile Platform for Strain Engineering in 2D Materials. NANO LETTERS 2020; 20:5339-5345. [PMID: 32491864 DOI: 10.1021/acs.nanolett.0c01706] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion coefficient. By running current through the microheater one can vary the temperature of the polymer and induce a controlled biaxial expansion of its surface. This controlled biaxial expansion can be transduced to biaxial strain to 2D materials, placed onto the polymer surface, which in turn induces a shift of the optical spectrum. Our thermal strain actuators can reach a maximum biaxial strain of 0.64%, and they can be modulated at frequencies up to 8 Hz. The compact geometry of these actuators results in a negligible spatial drift of 0.03 μm/°C, which facilitates their integration in optical spectroscopy measurements. We illustrate the potential of this strain engineering platform to fabricate a strain-actuated optical modulator with single-layer MoS2.
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Affiliation(s)
- Yu Kyoung Ryu
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), E-28049 Madrid, Spain
| | - Felix Carrascoso
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), E-28049 Madrid, Spain
| | - Rubén López-Nebreda
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| | - Nicolás Agraït
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
- Condensed Matter Physics Center (IFIMAC) and Instituto "Nicolás Cabrera", Universidad Autónoma de Madrid, E-28049 Madrid, Spain
- Fundación IMDEA Nanociencia, Ciudad Universitaria de Cantoblanco, E-28049 Madrid, Spain
| | - Riccardo Frisenda
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), E-28049 Madrid, Spain
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), E-28049 Madrid, Spain
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34
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Kim JM, Cho C, Hsieh EY, Nam S. Heterogeneous deformation of two-dimensional materials for emerging functionalities. JOURNAL OF MATERIALS RESEARCH 2020; 35:1369-1385. [PMID: 32572304 PMCID: PMC7306914 DOI: 10.1557/jmr.2020.34] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Atomically thin 2D materials exhibit strong intralayer covalent bonding and weak interlayer van der Waals interactions, offering unique high in-plane strength and out-of-plane flexibility. While atom-thick nature of 2D materials may cause uncontrolled intrinsic/extrinsic deformation in multiple length scales, it also provides new opportunities for exploring coupling between heterogeneous deformations and emerging functionalities in controllable and scalable ways for electronic, optical, and optoelectronic applications. In this review, we discuss (i) the mechanical characteristics of 2D materials, (ii) uncontrolled inherent deformation and extrinsic heterogeneity present in 2D materials, (iii) experimental strategies for controlled heterogeneous deformation of 2D materials, (iv) 3D structure-induced novel functionalities via crumple/wrinkle structure or kirigami structures, and (v) heterogeneous strain-induced emerging functionalities in exciton and phase engineering. Overall, heterogeneous deformation offers unique advantages for 2D materials research by enabling spatial tunability of 2D materials' interactions with photons, electrons, and molecules in a programmable and controlled manner.
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Affiliation(s)
- Jin Myung Kim
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
| | - Chullhee Cho
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
| | - Ezekiel Y. Hsieh
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
| | - SungWoo Nam
- Department of Materials Science and Engineering, Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
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35
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Zhou X, Zhang Z, Guo W. Dislocations as Single Photon Sources in Two-Dimensional Semiconductors. NANO LETTERS 2020; 20:4136-4143. [PMID: 32453959 DOI: 10.1021/acs.nanolett.9b05305] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Single photon sources hold great promise in quantum information technologies and are often materialized by single atoms, quantum dots, and point defects in dielectric materials. Yet, these entities are vulnerable to annealing and chemical passivation, ultimately influencing the stability of photonic devices. Here, we show that topologically stable dislocations in transition metal dichalcogenide monolayers can act as single photon sources, as supported by calculated defect levels, diploe matrix elements for transition, and excitation lifetimes with first-principles. The emission from dislocations can range from 0.48 to 1.29 eV by varying their structure, charge state, and chemical makeup in contrast to the visible range provided by previously reported sources. Since recent experiments have controllably created dislocations in monolayer materials, these results open the door to utilizing robustly stable defects for quantum computing.
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Affiliation(s)
- Xiaocheng Zhou
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Zhuhua Zhang
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
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