Pd-sensitized single vanadium oxide nanowires: highly responsive hydrogen sensing based on the metal-insulator transition

Nanoelectronics Using Metal-Insulator Transition

Metal-insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive change in Mott insulators has attracted tremendous interest for investigation into next-generation electronic and optoelectronic devices, as well as a fundamental understanding of condensed matter systems. Although the mechanism of MIT in Mott insulators is still controversial, great efforts have been made to understand and modulate MIT behavior for various electronic and optoelectronic applications. In this review, recent progress in the field of nanoelectronics utilizing MIT is highlighted. A brief introduction to the physics of MIT and its underlying mechanisms is begun. After discussing the MIT behaviors of various Mott insulators, recent advances in the design and fabrication of nanoelectronics devices based on MIT, including memories, gas sensors, photodetectors, logic circuits, and artificial neural networks are described. Finally, an outlook on the development and future applications of nanoelectronics utilizing MIT is provided. This review can serve as an overview and a comprehensive understanding of the design of MIT-based nanoelectronics for future electronic and optoelectronic devices.

Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO2 Nanowire Arrays on Nanoimprinted Si Substrates

In the present article, the position-controlled and catalytic-free synthesis of vanadium dioxide (VO₂) nanowires (NWs) grown by the chemical vapor deposition (CVD) on nanoimprinted silicon substrates in the form of nanopillar arrays was analyzed. The NW growth on silicon nanopillars with different cross-sectional areas was studied, and it has been shown that the NWs' height decreases with an increase in their cross-sectional area. The X-ray diffraction technique, scanning electron microscopy, and X-ray photoelectron spectroscopy showed the high quality of the grown VO₂ NWs. A qualitative description of the growth rate of vertical NWs based on the material balance equation is given. The dependence of the growth rate of vertical and horizontal NWs on the precursor concentration in the gas phase and on the growth time was investigated. It was found that the height of vertical VO₂ NWs along the [100] direction exhibited a linear dependence on time and increased with an increase in the precursor concentration. For horizontal VO₂ NWs, the height along the direction [011] varied little with the growth time and precursor concentration. These results suggest that the high-aspect ratio vertical VO₂ NWs formed due to different growth modes of their crystal faces forming the top of the growing VO₂ crystals and their lateral crystal faces related to the difference between the free energies of these crystal faces and implemented experimental conditions. The results obtained permit a better insight into the growth of high-aspect ratio VO₂ NWs and into the formation of large VO₂ NW arrays with a controlled composition and properties.

Adsorption of gas molecules of CH4, CO and H2O on the vanadium dioxide monolayer: computational method and model

Inspired by the recent use of two-dimensional nanomaterials as gas sensors, we used density functional theory calculations to study the adsorption of gas molecules (CH4, CO and H2O) on sandwich vanadium dioxide tablets. The results showed that of all these gases, only the CH4gas molecule was the electron acceptor with significant charge transfer on the VO2sheet. The adsorption energies of CH4, CO and H2O are -229.5 meV, -239.1 meV and -388.3 meV, respectively. We have also compared the adsorption energy of three different gas molecules on the VO2surface, our calculation results show that when the three kinds of gases are adsorbed on the VO2surface, the order of the surface adsorption energy is H2O > CO > CH4. It is also found that after adsorption of CH4, CO and H2O molecules, the electronic properties of VO2sheet changed obviously. However, due to the strong adsorption of H2O molecule on VO2sheet, it is difficult to desorption, which hinders its application in gas molecular sensors. The optical properties of VO2sheet are further calculated. The absorption of CH4, CO and H2O molecules is introduced to red-shift the dielectric function of the thin film, which indicates that the optical properties of the thin film have changed significantly. According to the change of optical properties of VO2sheet before and after molecular adsorption, VO2can be used as a highly selective optical gas sensor for CH4, CO and H2O detection. These results provide a new approach for the potential application of VO2based optical gas sensors.

Synthesis of Self-Assembled Randomly Oriented VO2 Nanowires on a Glass Substrate by a Spin Coating Method

Randomly oriented vanadium dioxide (VO₂) nanowires were produced on a glass substrate by spin coating from a cosolvent. SEM studies reveal that highly dense VO₂ nanowires were grown at an annealing temperature of 400 °C. X-ray diffraction (XRD) provides evidence of the high crystallinity of the VO₂ nanowires-embedded VO₂ thin films on the glass substrate at 400 °C. Characterization by high-resolution transmission electron microscopy (HR-TEM) confirmed the formation of VO₂ nanowires. The optical band gap of the nanowires-embedded VO₂ thin films was also calculated from the transmittance data to be 2.65-2.70 eV. The growth mechanism of the solution-processed semiconducting VO₂ nanowires was proposed based on both solvent selection and annealing temperature. Finally, the solar water splitting ability of the VO₂ nanowires-embedded VO₂ thin films was demonstrated in a photoelectrochemical cell (PEC).

Accelerated Hydrogen Diffusion and Surface Exchange by Domain Boundaries in Epitaxial VO2 Thin Films

Electronic phase modulation based on hydrogen insertion/extraction is kinetically limited by the bulk hydrogen diffusion or surface exchange reaction, so slow hydrogen kinetics has been a fundamental challenge to be solved for realizing faster solid-state electrochemical switching devices. Here we accelerate electronic phase modulation that occurs by hydrogen insertion in VO₂ through vertically aligned 2D defects induced by symmetry mismatch between epitaxial films and substrates. By using domain-matching epitaxial growth of monoclinic VO₂ films with lattice rotation and twinning on hexagonal Al₂O₃ substrates, the domain boundaries naturally align vertically; they provide a "highway" for hydrogen diffusion and surface exchange in VO₂ films and overcome the limited rates of bulk diffusion and surface reaction. From the quantitative analysis of the deuterium (²H) isotope tracer exchange, it is confirmed that the tracer diffusion coefficient (D*) and surface exchange coefficient (k*) were increased by several orders of magnitude in VO₂ films that had domain boundaries. These results yield fundamental insights into the mechanism by which mobile ions are inserted along extended defects and provide a strategy to overcome a limitation to switching speed in electrochemical devices that exploit ion insertion.

Daylight-Induced Metal-Insulator Transition in Ag-Decorated Vanadium Dioxide Nanorod Arrays

Metal-insulator transition (MIT) in strongly correlated electronic materials has enormous potential with scientific and technological impacts in future oxide nanoelectronic devices. Although photo-induced MIT can provide opportunities to extend the novel functionality of strongly correlated electronic materials, there have rarely been reports on it. Here, we report MIT provoked by visible-near-infrared light in Ag-decorated VO₂ nanorod arrays (NRs) because of localized surface plasmon resonance (LSPR) and its application to broadband photodetectors. Our simulation results based on the finite-difference time-domain method show that the electric field resulting from LSPR can be generated at the interface between Ag nanoparticles and VO₂ layers under vis NIR illumination. Using high-resolution transmission electronic microscopy and Raman spectroscopy, we observe the MIT and structural phase transition in the Ag-decorated VO₂ NRs due to the LSPR effect. The optoelectronic measurements confirm that high, fast, and broad photoresponse of Ag-decorated VO₂ NRs is attributed to photo-induced MIT due to LSPR. Our study will open up a new strategy to trigger MIT in strongly correlated electronic materials through functionalization with plasmonic nanoparticles and serve as a valuable proof of concept for next-generation optoelectronic devices with fast response, low power consumption, and high performance.

In situ Raman spectroscopy study of metal-enhanced hydrogenation and dehydrogenation of VO2

Vanadium dioxide (VO2) has a phase transition from insulator to metal at 340 K, and this transition can be strongly modified by hydrogenation. In this work, two dimensional (2D) VO2 sheets have been grown on Si(1 1 1) surfaces through chemical vapor deposition, and metal (Au, Pt) thin films were deposited on VO2 surfaces by sputtering. The hydrogenation and dehydrogenation of VO2 and metal-decorated VO2 structures in H2 and in air were in situ studied by Raman. We found that hydrogenation and dehydrogenation temperatures have been significantly decreased with the VO2 surface decorated by Au and Pt. The enhanced hydrogenation and dehydrogenation reactions can be attributed to catalytic dissociation of H2 and O2 molecules on metal surfaces and subsequent spillover of dissociated H and O atoms to the oxide surfaces.

Design of Highly Selective Gas Sensors via Physicochemical Modification of Oxide Nanowires: Overview

Strategies for the enhancement of gas sensing properties, and specifically the improvement of gas selectivity of metal oxide semiconductor nanowire (NW) networks grown by chemical vapor deposition and thermal evaporation, are reviewed. Highly crystalline NWs grown by vapor-phase routes have various advantages, and thus have been applied in the field of gas sensors over the years. In particular, n-type NWs such as SnO₂, ZnO, and In₂O₃ are widely studied because of their simple synthetic preparation and high gas response. However, due to their usually high responses to C₂H₅OH and NO₂, the selective detection of other harmful and toxic gases using oxide NWs remains a challenging issue. Various strategies—such as doping/loading of noble metals, decorating/doping of catalytic metal oxides, and the formation of core–shell structures—have been explored to enhance gas selectivity and sensitivity, and are discussed herein. Additional methods such as the transformation of n-type into p-type NWs and the formation of catalyst-doped hierarchical structures by branch growth have also proven to be promising for the enhancement of gas selectivity. Accordingly, the physicochemical modification of oxide NWs via various methods provides new strategies to achieve the selective detection of a specific gas, and after further investigations, this approach could pave a new way in the field of NW-based semiconductor-type gas sensors.

Optoelectronic and Electrochemical Properties of Vanadium Pentoxide Nanowires Synthesized by Vapor-Solid Process

Substantial synthetic vanadium pentoxide (V₂O₅) nanowires were successfully produced by a vapor-solid (VS) method of thermal evaporation without using precursors as nucleation sites for single crystalline V₂O₅ nanowires with a (110) growth plane. The micromorphology and microstructure of V₂O₅ nanowires were analyzed by scanning electron microscope (SEM), energy-dispersive X-ray spectroscope (EDS), transmission electron microscope (TEM) and X-ray diffraction (XRD). The spiral growth mechanism of V₂O₅ nanowires in the VS process is proved by a TEM image. The photo-luminescence (PL) spectrum of V₂O₅ nanowires shows intrinsic (410 nm and 560 nm) and defect-related (710 nm) emissions, which are ascribable to the bound of inter-band transitions (V 3d conduction band to O 2p valence band). The electrical resistivity could be evaluated as 64.62 Ω·cm via four-point probe method. The potential differences between oxidation peak and reduction peak are 0.861 V and 0.470 V for the first and 10th cycle, respectively.

Environmental application of nanotechnology: air, soil, and water

Global deterioration of water, soil, and atmosphere by the release of toxic chemicals from the ongoing anthropogenic activities is becoming a serious problem throughout the world. This poses numerous issues relevant to ecosystem and human health that intensify the application challenges of conventional treatment technologies. Therefore, this review sheds the light on the recent progresses in nanotechnology and its vital role to encompass the imperative demand to monitor and treat the emerging hazardous wastes with lower cost, less energy, as well as higher efficiency. Essentially, the key aspects of this account are to briefly outline the advantages of nanotechnology over conventional treatment technologies and to relevantly highlight the treatment applications of some nanomaterials (e.g., carbon-based nanoparticles, antibacterial nanoparticles, and metal oxide nanoparticles) in the following environments: (1) air (treatment of greenhouse gases, volatile organic compounds, and bioaerosols via adsorption, photocatalytic degradation, thermal decomposition, and air filtration processes), (2) soil (application of nanomaterials as amendment agents for phytoremediation processes and utilization of stabilizers to enhance their performance), and (3) water (removal of organic pollutants, heavy metals, pathogens through adsorption, membrane processes, photocatalysis, and disinfection processes).

X-Ray Spectroscopy of Ultra-Thin Oxide/Oxide Heteroepitaxial Films: A Case Study of Single-Nanometer VO2/TiO2

Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES) and angular soft X-ray absorption spectroscopy (XAS) to study epitaxial VO₂/TiO₂ (100) films ranging from 7.5 to 1 nm. We observe a low-temperature (300 K) insulating phase with evidence of vanadium-vanadium (V-V) dimers and a high-temperature (400 K) metallic phase absent of V-V dimers irrespective of film thickness. Our results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. More generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions.

Alternating Current Dielectrophoresis Optimization of Pt-Decorated Graphene Oxide Nanostructures for Proficient Hydrogen Gas Sensor

Alternating current dielectrophoresis (DEP) is an excellent technique to assemble nanoscale materials. For efficient DEP, the optimization of the key parameters like peak-to-peak voltage, applied frequency, and processing time is required for good device. In this work, we have assembled graphene oxide (GO) nanostructures mixed with platinum (Pt) nanoparticles between the micro gap electrodes for a proficient hydrogen gas sensors. The Pt-decorated GO nanostructures were well located between a pair of prepatterned Ti/Au electrodes by controlling the DEP technique with the optimized parameters and subsequently thermally reduced before sensing. The device fabricated using the DEP technique with the optimized parameters showed relatively high sensitivity (∼10%) to 200 ppm hydrogen gas at room temperature. The results indicates that the device could be used in several industry applications, such as gas storage and leak detection.

VO₂ nanorods for efficient performance in thermal fluids and sensors

VO2 (B) nanorods with average width ranging between 50-100 nm are synthesized via a hydrothermal method and the post hydrothermal treatment drying temperature is found to be influential in their overall phase and growth morphology evolution. The nanorods with unusually high optical bandgap for a VO2 material are effective in enhancing the thermal performance of ethylene glycol nanofluids over a wide temperature range as is indicated by the temperature dependent thermal conductivity measurements. Humidity and LPG sensors fabricated using the VO2 (B) nanorods bear testament to their efficient sensing performance, which can be partially attributed to the mesoporous nature of the nanorods.

Remarkable improvement of gas-sensing abilities in p-type oxide nanowires by local modification of the hole-accumulation layer

This paper proposes a method for improving the reducing or oxidizing gas-sensing abilities of p-type oxide nanowires (NWs) by locally modifying the hole-accumulation channel through the attachment of p-type nanoparticles (NPs) with different upper valence band levels. In this study, the sensing behaviors of p-CuO NWs functionalized with either p-NiO or p-Co3O4 NPs were investigated as a model materials system. The attachment of p-NiO NPs greatly improved the reducing gas-sensing performance of p-CuO NWs. In contrast, the p-Co3O4 NPs improved the oxidizing gas-sensing properties of p-CuO NWs. These results are associated with the local suppression/expansion of the hole-accumulation channel of p-CuO NWs along the radial direction due to hole flow between the NWs and NPs. The approach proposed in this study provides a guideline for fabricating sensitive chemical sensors based on p-CuO NWs.

Star-shaped VO2 (M) nanoparticle films with high thermochromic performance

Star-shaped VO₂ (M) nanoparticles demonstrate adjustable phase transition temperature and excellent reversible infrared modulations in response to external voltage.

Postfabrication annealing effects on insulator-metal transitions in VO2 thin-film devices

In order to investigate the metal-insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator-metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 °C. The V 2p3/2 peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films. A decrease of the transition temperature from voltage hysteresis measurements further endorse the reducing effects of the annealing on VO2 thin-film.

In situ probing of doping- and stress-mediated phase transitions in a single-crystalline VO₂ nanobeam by spatially resolved Raman spectroscopy

We demonstrate an experimental in situ observation of the temperature-dependent evolution of doping- and stress-mediated structural phase transitions in an individual single-crystalline VO₂ nanobeam on a Au-coated substrate under exposure to hydrogen gas using spatially resolved Raman spectroscopy. The nucleation temperature of the rutile R structural phase in the VO₂ nanobeam upon heating under hydrogen gas was lower than that under air. The spatial structural phase evolution behavior along the length of the VO₂ nanobeam under hydrogen gas upon heating was much more inhomogeneous than that along the length of the same nanobeam under air. The triclinic T phase of the VO₂ nanobeam upon heating under hydrogen gas transformed to the R phase and this R phase was stabilized even at room temperature in air after sample cooling. In particular, after the VO₂ nanobeam with the R phase was annealed at approximately 250 °C in air, it exhibited the monoclinic M1 phase (not the T phase) at room temperature during heating and cooling cycles. These results were attributed to the interplay between hydrogen doping and stress associated with nanobeam-substrate interactions. Our study has important implications for engineering metal-insulator transition properties and developing functional devices based on VO₂ nanostructures through doping and stress.

Self-assembly and horizontal orientation growth of VO2 nanowires

Single-crystalline vanadium dioxide (VO₂) nanostructures have attracted an intense research interest recently because of their unique single-domain metal-insulator phase transition property. Synthesis of these nanostructures in the past was limited in density, alignment, or single-crystallinity. The assembly of VO₂ nanowires (NWs) is desirable for a “bottom-up” approach to the engineering of intricate structures using nanoscale building blocks. Here, we report the successful synthesis of horizontally aligned VO₂ NWs with a dense growth mode in the [1-100]_quartz direction of a polished x-cut quartz surface using a simple vapor transport method. Our strategy of controlled growth of VO₂ NWs promisingly paves the way for designing novel metal-insulator transition devices based on VO₂ NWs.

Strongly coupled hybrid nanostructures for selective hydrogen detection--understanding the role of noble metals in reducing cross-sensitivity

Noble metal-semiconductor hybrid nanostructures can offer outperformance to gas sensors in terms of sensitivity and selectivity. In this work, a catalytically activated (CA) hydrogen sensor is realized based on strongly coupled Pt/Pd-WO3 hybrid nanostructures constructed by a galvanic replacement participated solvothermal procedure. The room-temperature operation and high selectivity distinguish this sensor from the traditional ones. It is capable of detecting dozens of parts per million (ppm) hydrogen in the presence of thousands of ppm methane gas. An insight into the role of noble metals in reducing cross-sensitivity is provided by comparing the sensing properties of this sensor with a traditional thermally activated (TA) one made from the same pristine WO3. Based on both experimental and density functional theory (DFT) calculation results, the cross-sensitivity of the TA sensor is found to have a strong dependence on the highest occupied molecular orbital (HOMO) level of the hydrocarbon molecules. The high selectivity of the CA sensor comes from the reduced impact of gas frontier orbitals on the charge transfer process by the nano-scaled metal-semiconductor (MS) interface. The methodology demonstrated in this work indicates that rational design of MS hybrid nanostructures can be a promising strategy for highly selective gas sensing applications.

Effective decoration of Pd nanoparticles on the surface of SnO2 nanowires for enhancement of CO gas-sensing performance

Decoration of noble metal nanoparticles (NPs) on the surface of semiconducting metal oxide nanowires (NWs) to enhance material characteristics, functionalization, and sensing abilities has attracted increasing interests from researchers worldwide. In this study, we introduce an effective method for the decoration of Pd NPs on the surface of SnO2 NWs to enhance CO gas-sensing performance. Single-crystal SnO2 NWs were fabricated by chemical vapor deposition, whereas Pd NPs were decorated on the surface of SnO2 NWs by in situ reduction of the Pd complex at room temperature without using any linker or reduction agent excepting the copolymer P123. The materials were characterized by advanced techniques, such as high-resolution transmission electron microscopy, scanning transmission electron microscopy, and energy-dispersive X-ray spectroscopy. The Pd NPs were effectively decorated on the surface of SnO2 NWs. As an example, the CO sensing characteristics of SnO2 NWs decorated with Pd NPs were investigated at different temperatures. Results revealed that the gas sensor exhibited excellent sensing performance to CO at low concentration (1-25ppm) with ultrafast response-recovery time (in seconds), high responsivity, good stability, and reproducibility.

Heat dissipation from suspended self-heated nanowires: gas sensor prospective

The strong temperature dependence of the electrical conductivity in semiconductors was employed for gas and pressure sensing with a self-heated Si nanowire resistor. The electrical conductivity in such a device depends on heat dissipation and partitioning inside the device and was studied comparatively for suspended and supported device architectures. The appearance of the exhaustion region in the temperature-dependent resistivity of a Joule-heated nanowire was used as a temperature marker for implementation of the quasi-constant temperature operation mode. At low pressures, the sensor is idle due to dominant heat dissipation from the nanowire to the substrate and/or electrodes. Above ca. 10 Torr the sensitivity to gases has a strong dependence on pressure as well as on the type of gas and is determined by conductive heat transfer between the nanowire surface and ambient. This implies that, in contrast to macroscopic devices, the heat dissipation via the convection mechanism does not contribute significantly to the heat transfer from the self-heated nanowire. The thermal sensitivity of the sensor to reactive gases depends on the effectiveness of the particular endothermic/exothermic reaction at the surface of the nanowire and was explored for the case of acetone-air mixture. The strong coupling of the electrical and thermal properties in the individual Joule-heated semiconducting nanowire allows fabrication of power-efficient multi-parametric nanoscopic gas/pressure sensors that are analogs of Pirani and pellistor type detectors.

Fast-response, sensitivitive and low-powered chemosensors by fusing nanostructured porous thin film and IDEs-microheater chip

The chemiresistive thin film gas sensors with fast response, high sensitivity, low power consumption and mass-produced potency, have been expected for practical application. It requires both sensitive materials, especially exquisite nanomaterials, and efficient substrate chip for heating and electrical addressing. However, it is challenging to achieve repeatable microstructures across the films and low power consumption of substrate chip. Here we presented a new sensor structure via the fusion of metal-oxide nanoporous films and micro-electro-mechanical systems (MEMS)-based sensing chip. An interdigital-electrodes (IDEs) and microheater integrated MEMS structure is designed and employed as substrate chip to in-situ fabricate colloidal monolayer template-induced metal-oxide (egg. SnO₂) nanoporous sensing films. This fused sensor demonstrates mW-level low power, ultrafast response (~1 s), and parts-per-billion lever detection for ethanol gas. Due to the controllable template strategy and mass-production potential, such micro/nano fused high-performance gas sensors will be next-generation key miniaturized/integrated devices for advanced practical applications.

Rational design of sub-parts per million specific gas sensors array based on metal nanoparticles decorated nanowire enhancement-mode transistors

"One key to one lock" hybrid sensor configuration is rationally designed and demonstrated as a direct effective route for the target-gas-specific, highly sensitive, and promptly responsive chemical gas sensing for room temperature operation in a complex ambient background. The design concept is based on three criteria: (i) quasi-one-dimensional metal oxide nanostructures as the sensing platform which exhibits good electron mobility and chemical and thermal stability; (ii) deep enhancement-mode field-effect transistors (E-mode FETs) with appropriate threshold voltages to suppress the nonspecific sensitivity to all gases (decouple the selectivity and sensitivity away from nanowires); (iii) metal nanoparticle decoration onto the nanostructure surface to introduce the gas specific selectivity and sensitivity to the sensing platform. In this work, using Mg-doped In2O3 nanowire E-mode FET sensor arrays decorated with various discrete metal nanoparticles (i.e., Au, Ag, and Pt) as illustrative prototypes here further confirms the feasibility of this design. Particularly, the Au decorated sensor arrays exhibit more than 3 orders of magnitude response to the exposure of 100 ppm CO among a mixture of gases at room temperature. The corresponding response time and detection limit are as low as ∼4 s and ∼500 ppb, respectively. All of these could have important implications for this "one key to one lock" hybrid sensor configuration which potentially open up a rational avenue to the design of advanced-generation chemical sensors with unprecedented selectivity and sensitivity.

Suspended sub-50 nm vanadium dioxide membrane transistors: fabrication and ionic liquid gating studies

We demonstrate a robust lithographic patterning method to fabricate self-supported sub-50 nm VO(2) membranes that undergo a phase transition. Utilizing such self-supported membranes, we directly observed a shift in the metal-insulator transition temperature arising from stress relaxation and consistent opening of the hysteresis. Electric double layer transistors were then fabricated with the membranes and compared to thin film devices. The ionic liquid allowed reversible modulation of channel resistance and distinguishing bulk processes from the surface effects. From the shift in the metal-insulator transition temperature, the carrier density doped through electrolyte gating is estimated to be 1 × 10(20) cm(-3). Hydrogen annealing studies showed little difference in resistivity between the film and the membrane indicating rapid diffusion of hydrogen in the vanadium oxide rutile lattice consistent with previous observations. The ability to fabricate electrically-wired, suspended VO(2) ultra-thin membranes creates new opportunities to study mesoscopic size effects on phase transitions and may also be of interest in sensor devices.

Hydrogen gas sensors based on semiconductor oxide nanostructures

Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors.

Stoichiometry engineering of monoclinic to rutile phase transition in suspended single crystalline vanadium dioxide nanobeams

Coexisting monoclinic M(1) (insulating) and rutile (metallic) domains were observed in free-standing vanadium dioxide nanobeams at room temperature. Similar domain structures have been attributed to interfacial strain, which was not present here. Annealing under reducing conditions indicated that a deficiency of oxygen stabilizes the rutile phase to temperatures as low as 103 K, which represents an unprecedented suppression of the phase transition by 238 K. In a complementary manner, oxygen-rich growth conditions stabilize the metastable monoclinic M(2) and triclinic T (or M(3)) phases. A pseudophase diagram with dimensions of temperature and stoichiometry is established that highlights the accessibility of new phases in the nanobeam geometry.

Hydrogen sensing with diameter- and chirality-sorted carbon nanotubes

The work function of palladium is known to be sensitive to hydrogen by the formation of a surface dipole layer or Pd hydride. One approach to detect such a change in the work function can be based on the formation of a Schottky barrier between the palladium metal and a semiconductor. Here, we study the hydrogen sensitivity of Schottky barrier field-effect transistors made for the first time from diameter- and chirality-sorted semiconducting single-walled carbon nanotubes (s-SWNTs) in contact with Pd electrodes. We observe an unrivaled 100-fold change in the on-state conductance at 100 ppm H2 compared to air for devices with s-SWNT and diameters between 1 and 1.6 nm. Hydrogen sensing is not observed for devices of Pd-contacted few-layer graphene (FLG), as expected due to the absence of a significant Schottky barrier. Unexpectedly, we observe also a vanishing sensitivity for small-diameter SWNTs. We explain this observation by changes in the nanotube work function caused by spillover and chemisorption of atomic hydrogen onto small-diameter nanotubes. We also observe that long-term sensing stability is only achieved if the gate voltage is inverted periodically. Under constant gate bias, the sensitivity reduces with time, which we relate to gate screening by accumulated charges in the substrate.

Nonvolatile gating effects on radicals-containing vanadium oxide nanowires by gas molecule absorption and diffusion

The charge conduction of a single nanowire of radicals-containing vanadium oxides was experimentally studied and found to be modulated by different gas exposures, showing a gating effect by the adsorption and absorption of different gas molecules. After N(2) and O(2) gas are introduced, the nanowires show an abrupt increase of the resistance but show the opposite trend within a longer timescale of several ks. The introduction of N(2) and O(2) can respectively 'write' the nanowire into high and low resistance states, which are metastable in a high vacuum. The long-term gating effect which was attributed to the interlayer diffusion of the gas molecules can be registered on the nanowire in the high vacuum environment.

Laser ablation direct writing of metal nanoparticles for hydrogen and humidity sensors

A UV pulsed laser writing technique to fabricate metal nanoparticle patterns on low-cost substrates is demonstrated. We use this process to directly write nanoparticle gas sensors, which operate via quantum tunnelling of electrons at room temperature across the device. The advantages of this method are no lithography requirements, high precision nanoparticle placement, and room temperature processing in atmospheric conditions. Palladium-based nanoparticle sensors are tested for the detection of water vapor and hydrogen within controlled environmental chambers. The electrical conduction mechanism responsible for the very high sensitivity of the devices is discussed with regard to the interparticle capacitance and the tunnelling resistance.

Mesoporous silica nanotubes hybrid membranes for functional nanofiltration

The development of nanofiltration systems would greatly assist in the production of well-defined particles and biomolecules with unique properties. We report a direct, simple synthesis of hexagonal silica nanotubes (NTs), which vertically aligned inside anodic alumina membranes (AAM) by means of a direct templating method of microemulsion phases with cationic surfactants. The direct approach was used as soft templates for predicting ordered assemblies of surfactant/silica composites through strong interactions within AAM pockets. Thus, densely packed NTs were successfully formed in the entirety of the AAM channels. These silica NTs were coated with layers of organic moieties to create a powerful technique for the ultrafine filtration. The resulting modified-silica NTs were chemically robust and showed affinity toward the transport of small molecular particles. The rigid silica NTs inside AAM channels had a pore diameter of <or= 4 nm and were used as ultrafine filtration systems for noble metal nanoparticles (NM NPs) and semiconductor nanocrystals (SC NCs) fabricated with a wide range of sizes (1.0-50 nm) and spherical/pyramidal morphologies. Moreover, the silica NTs hybrid membranes were also found to be suitable for separation of biomolecules such as cytochrome c (CytC). Importantly, this nanofilter design retains high nanofiltration efficiency of NM NPs, SC NCs and biomolecules after a number of reuse cycles. Such retention is crucial in industrial applications.

Single beta-AgVO3 nanowire H2S sensor

We report the electrical transport and H(2)S sensing properties of single beta-AgVO(3) nanowire device. beta-AgVO(3) nanowires were successfully prepared by ultrasonic treatment followed by hydrothermal reaction using V(2)O(5) sol. The individual beta-AgVO(3) nanowire exhibits a "threshold switching" phenomenon. High bias (i.e., 6 V for Au contacts) is required to initially switch the individual nanowire device from nonconductive to conductive, and it may be related to the formation of nanoscale metallic Ag when enough voltage is applied between the two electrodes. This novel nanomaterial shows good H(2)S sensing performances with short response and recovery time within 20 s, relatively low response concentration of 50 ppm, and good selectivity.

Active terahertz nanoantennas based on VO2 phase transition

Unusual performances of metamaterials such as negative index of refraction, memory effect, and cloaking originate from the resonance features of the metallic composite atom(1-6). Indeed, control of metamaterial properties by changing dielectric environments of thin films below the metallic resonators has been demonstrated(7-11). However, the dynamic control ranges are still limited to less than a factor of 10,(7-11) with the applicable bandwidth defined by the sharp resonance features. Here, we present ultra-broad-band metamaterial thin film with colossal dynamic control range, fulfilling present day research demands. Hybridized with thin VO(2) (vanadium dioxide) (12-18) films, nanoresonator supercell arrays designed for one decade of spectral width in terahertz frequency region show an unprecedented extinction ratio of over 10000 when the underlying thin film experiences a phase transition. Our nanoresonator approach realizes the full potential of the thin film technology for long wavelength applications.

One-dimensional oxide nanostructures as gas-sensing materials: review and issues

In this article, we review gas sensor application of one-dimensional (1D) metal-oxide nanostructures with major emphases on the types of device structure and issues for realizing practical sensors. One of the most important steps in fabricating 1D-nanostructure devices is manipulation and making electrical contacts of the nanostructures. Gas sensors based on individual 1D nanostructure, which were usually fabricated using electron-beam lithography, have been a platform technology for fundamental research. Recently, gas sensors with practical applicability were proposed, which were fabricated with an array of 1D nanostructures using scalable micro-fabrication tools. In the second part of the paper, some critical issues are pointed out including long-term stability, gas selectivity, and room-temperature operation of 1D-nanostructure-based metal-oxide gas sensors.