1
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Song S, Rahaman M, Jariwala D. Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics? ACS NANO 2024; 18:10955-10978. [PMID: 38625032 DOI: 10.1021/acsnano.3c12938] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.
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Affiliation(s)
- Seunguk Song
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Mahfujur Rahaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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2
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Yan Z, Xu N, Deng S. Realization of High Current Gain for Van der Waals MoS 2/WSe 2/MoS 2 Bipolar Junction Transistor. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:718. [PMID: 38668212 PMCID: PMC11053443 DOI: 10.3390/nano14080718] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2024] [Revised: 04/10/2024] [Accepted: 04/17/2024] [Indexed: 04/29/2024]
Abstract
Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertically stacked n+-MoS2/WSe2/MoS2 was demonstrated. The electrical performance of the device was investigated under common-base and common-emitter configurations, which show relatively large current gains of α ≈ 0.98 and β ≈ 225. In addition, the breakdown characteristics of the vertically stacked n+-MoS2/WSe2/MoS2 BJT were investigated. An open-emitter base-collector breakdown voltage (BVCBO) of 52.9 V and an open-base collector-emitter breakdown voltage (BVCEO) of 40.3 V were observed under a room-temperature condition. With the increase in the operating temperature, both BVCBO and BVCEO increased. This study demonstrates a promising way to obtain 2D-material-based BJT with high current gains and provides a deep insight into the breakdown characteristics of the device, which may promote the applications of van der Waals BJTs in the fields of integrated circuits.
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Affiliation(s)
| | | | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China; (Z.Y.); (N.X.)
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3
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Lian Z, Li YM, Yan L, Ma L, Chen D, Taniguchi T, Watanabe K, Zhang C, Shi SF. Stark Effects of Rydberg Excitons in a Monolayer WSe 2 P-N Junction. NANO LETTERS 2024. [PMID: 38607185 DOI: 10.1021/acs.nanolett.4c00134] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/13/2024]
Abstract
The enhanced Coulomb interaction in two-dimensional semiconductors leads to tightly bound electron-hole pairs known as excitons. The large binding energy of excitons enables the formation of Rydberg excitons with high principal quantum numbers (n), analogous to Rydberg atoms. Rydberg excitons possess strong interactions among themselves as well as sensitive responses to external stimuli. Here, we probe Rydberg exciton resonances through photocurrent spectroscopy in a monolayer WSe2 p-n junction formed by a split-gate geometry. We show that an external in-plane electric field not only induces a large Stark shift of Rydberg excitons up to quantum principal number 3 but also mixes different orbitals and brightens otherwise dark states such as 3p and 3d. Our study provides an exciting platform for engineering Rydberg excitons for new quantum states and quantum sensing.
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Affiliation(s)
- Zhen Lian
- Department of Physics, Carnegie Mellon University, Pittsburgh 15213, Pennsylvania, United States
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy 12180, New York, United States
| | - Yun-Mei Li
- Department of Physics, School of Physical Science and Technology, Xiamen University, Xiamen 361005, China
| | - Li Yan
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy 12180, New York, United States
| | - Lei Ma
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy 12180, New York, United States
| | - Dongxue Chen
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy 12180, New York, United States
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Chuanwei Zhang
- Department of Physics, University of Texas at Dallas, Richardson 75080, Texas, United States
- Department of Physics, Washington University in St Louis, St. Louis 63105, Missouri, United States
| | - Su-Fei Shi
- Department of Physics, Carnegie Mellon University, Pittsburgh 15213, Pennsylvania, United States
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy 12180, New York, United States
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4
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Ra HS, Lee SH, Jeong SJ, Cho S, Lee JS. Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications. SMALL METHODS 2024; 8:e2300245. [PMID: 37330655 DOI: 10.1002/smtd.202300245] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/20/2023] [Indexed: 06/19/2023]
Abstract
Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next-generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light-emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.
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Affiliation(s)
- Hyun-Soo Ra
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860, Barcelona, Spain
| | - Sang-Hyeon Lee
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Seock-Jin Jeong
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Sinyoung Cho
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Jong-Soo Lee
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
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5
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Liu J, Su L, Zhang X, Shtansky DV, Fang X. Ferroelectric-Optoelectronic Hybrid System for Photodetection. SMALL METHODS 2024; 8:e2300319. [PMID: 37312397 DOI: 10.1002/smtd.202300319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2023] [Revised: 04/28/2023] [Indexed: 06/15/2023]
Abstract
Photodetectors (PDs), as functional devices based on photon-to-electron conversion, are an indispensable component for the next-generation Internet of Things system. The research of advanced and efficient PDs that meet the diverse demands is becoming a major task. Ferroelectric materials can develop a unique spontaneous polarization due to the symmetry-breaking of the unit cell, which is switchable under an external electric field. Ferroelectric polarization field has the intrinsic characteristics of non-volatilization and rewritability. Introducing ferroelectrics to effectively manipulate the band bending and carrier transport can be non-destructive and controllable in the ferroelectric-optoelectronic hybrid systems. Hence, ferroelectric integration offers a promising strategy for high-performance photoelectric detection. This paper reviews the fundamentals of optoelectronic and ferroelectric materials, and their interactions in hybrid photodetection systems. The first section introduces the characteristics and applications of typical optoelectronic and ferroelectric materials. Then, the interplay mechanisms, modulation effects, and typical device structures of ferroelectric-optoelectronic hybrid systems are discussed. Finally, in summary and perspective section, the progress of ferroelectrics integrated PDs is summed up and the challenges of ferroelectrics in the field of optoelectronics are considered.
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Affiliation(s)
- Jie Liu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Li Su
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Xinglong Zhang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Dmitry V Shtansky
- National University of Science and Technology "MISIS", Moscow, 119049, Russia
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
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6
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Luo W, Song R, Whetten BG, Huang D, Cheng X, Belyanin A, Jiang T, Raschke MB. Nonlinear Nano-Imaging of Interlayer Coupling in 2D Graphene-Semiconductor Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2307345. [PMID: 38279570 DOI: 10.1002/smll.202307345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Revised: 12/13/2023] [Indexed: 01/28/2024]
Abstract
The emergent electronic, spin, and other quantum properties of 2D heterostructures of graphene and transition metal dichalcogenides are controlled by the underlying interlayer coupling and associated charge and energy transfer dynamics. However, these processes are sensitive to interlayer distance and crystallographic orientation, which are in turn affected by defects, grain boundaries, or other nanoscale heterogeneities. This obfuscates the distinction between interlayer charge and energy transfer. Here, nanoscale imaging in coherent four-wave mixing (FWM) and incoherent two-photon photoluminescence (2PPL) is combined with a tip distance-dependent coupled rate equation model to resolve the underlying intra- and inter-layer dynamics while avoiding the influence of structural heterogeneities in mono- to multi-layer graphene/WSe2 heterostructures. With selective insertion of hBN spacer layers, it is shown that energy, as opposed to charge transfer, dominates the interlayer-coupled optical response. From the distinct nano-FWM and -2PPL tip-sample distance-dependent modification of interlayer and intralayer relaxation by tip-induced enhancement and quenching, an interlayer energy transfer time ofτ ET ≈ ( 0 . 35 - 0.15 + 0.65 ) $\tau _{\rm ET} \approx (0.35^{+0.65}_{-0.15})$ ps consistent with recent reports is derived. As a local probe technique, this approach highlights the ability to determine intrinsic sample properties even in the presence of large sample heterogeneity.
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Affiliation(s)
- Wenjin Luo
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Renkang Song
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Benjamin G Whetten
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Di Huang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Xinbin Cheng
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Alexey Belyanin
- Department of Physics and Astronomy, Texas A&M University, College Station, TX, 77843, USA
| | - Tao Jiang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Markus B Raschke
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
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7
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Scott RJ, Valencia-Acuna P, Zhao H. Spatiotemporal Observation of Quasi-Ballistic Transport of Electrons in Graphene. ACS NANO 2023; 17:25368-25376. [PMID: 38091261 DOI: 10.1021/acsnano.3c08816] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
We report spatiotemporal observations of room-temperature quasi-ballistic electron transport in graphene, which is achieved by utilizing a four-layer van der Waals heterostructure to generate free charge carriers. The heterostructure is formed by sandwiching a MoS2 and MoSe2 heterobilayer between two graphene monolayers. Transient absorption measurements reveal that the electrons and holes separated by the type-II interface between MoS2 and MoSe2 can transfer to the two graphene layers, respectively. Transient absorption microscopy measurements, with high spatial and temporal resolution, reveal that while the holes in one graphene layer undergo a classical diffusion process with a large diffusion coefficient of 65 cm2 s-1 and a charge mobility of 5000 cm2 V-1 s-1, the electrons in the other graphene layer exhibit a quasi-ballistic transport feature, with a ballistic transport time of 20 ps and a speed of 22 km s-1, respectively. The different in-plane transport properties confirm that electrons and holes move independently of each other as charge carriers. The optical generation of ballistic charge carriers suggests potential applications for such van der Waals heterostructures as optoelectronic materials.
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Affiliation(s)
- Ryan J Scott
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
| | - Pavel Valencia-Acuna
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
| | - Hui Zhao
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
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8
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Zhan Y, Wu Z, Zeng P, Wang W, Jiang Y, Zheng H, Zheng P, Zheng L, Zhang Y. High-Performance Self-Powered WSe 2/ReS 2 Photodetector Enabled via Surface Charge Transfer Doping. ACS APPLIED MATERIALS & INTERFACES 2023; 15:55043-55054. [PMID: 37967170 DOI: 10.1021/acsami.3c10654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2023]
Abstract
Two-dimensional (2D) van der Waals heterostructures based on various 2D transition metal dichalcogenides are widely used in photodetection applications. However, their response time and photoresponsivity are limited, posing a challenge for their applications in high-sensitivity photodetection. Surface charge transfer doping (SCTD) has emerged as a novel doping approach for low-dimensional materials with high specific surface area and attracted considerable attention, as it is simple and effective, does not damage the lattice, and considers various types of dopants. Herein, we prepare p-i-n junction-based photodetectors via the SCTD of WSe2/ReS2 heterojunctions using p-type dopant F4-TCNQ molecules, where doped WSe2 serves as a p-type semiconductor, undoped WSe2 acts as an intrinsic layer, and ReS2 functions as an n-type semiconductor. The surface-charge-transfer-doped WSe2/ReS2 heterojunction leads to a reduction in the Schottky barrier and an increase in the built-in electric field compared with the as-fabricated heterojunction. In the photovoltaic mode and under 785 nm laser illumination, the photodiode exhibits an increase in responsivity from 0.08 to 0.29 A/W, specific detectivity from 1.89 × 1012 to 8.02 × 1012 Jones, and the external quantum efficiency from 12.67 to 46.29%. Additionally, the p-i-n structure expands the depletion region width, resulting in a photovoltaic response time of 7.56/6.48 μs and a -3 dB cutoff frequency of over 85 kHz, an order of magnitude faster than the pristine response time. Herein, we derive an effective and simple scheme for designing high-performance, low-power optoelectronic devices based on 2D van der Waals heterostructures.
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Affiliation(s)
- Yaxin Zhan
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Zhangting Wu
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Peiyu Zeng
- School of Physics, Southeast University, Nanjing 211189, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Yuan Jiang
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Hui Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Peng Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Liang Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Yang Zhang
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
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9
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Yagodkin D, Kumar A, Ankerhold E, Richter J, Watanabe K, Taniguchi T, Gahl C, Bolotin KI. Probing the Formation of Dark Interlayer Excitons via Ultrafast Photocurrent. NANO LETTERS 2023; 23:9212-9218. [PMID: 37788809 PMCID: PMC10603811 DOI: 10.1021/acs.nanolett.3c01708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Revised: 08/15/2023] [Indexed: 10/05/2023]
Abstract
Optically dark excitons determine a wide range of properties of photoexcited semiconductors yet are hard to access via conventional time-resolved spectroscopies. Here, we develop a time-resolved ultrafast photocurrent technique (trPC) to probe the formation dynamics of optically dark excitons. The nonlinear nature of the trPC makes it particularly sensitive to the formation of excitons occurring at the femtosecond time scale after the excitation. As a proof of principle, we extract the interlayer exciton formation time of 0.4 ps at 160 μJ/cm2 fluence in a MoS2/MoSe2 heterostructure and show that this time decreases with fluence. In addition, our approach provides access to the dynamics of carriers and their interlayer transport. Overall, our work establishes trPC as a technique to study dark excitons in various systems that are hard to probe by other approaches.
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Affiliation(s)
- Denis Yagodkin
- Department
of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany
| | - Abhijeet Kumar
- Department
of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany
| | - Elias Ankerhold
- Department
of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany
| | - Johanna Richter
- Department
of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Cornelius Gahl
- Department
of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany
| | - Kirill I. Bolotin
- Department
of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany
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10
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Jiao C, Pei S, Wu S, Wang Z, Xia J. Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:114503. [PMID: 37774692 DOI: 10.1088/1361-6633/acfe89] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Accepted: 09/29/2023] [Indexed: 10/01/2023]
Abstract
Two-dimensional (2D) layered materials can stack into new material systems, with van der Waals (vdW) interaction between the adjacent constituent layers. This stacking process of 2D atomic layers creates a new degree of freedom-interlayer interface between two adjacent layers-that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures (HSs), the physical properties are largely determined by the vdW interaction between the individual layers,i.e.interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D HSs field, including fundamental physics study, property tuning techniques, and future applications.
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Affiliation(s)
- Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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11
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Hu Y, Jiang J, Zhang P, Ma Z, Guan F, Li D, Qian Z, Zhang X, Huang P. Prediction of nonlayered oxide monolayers as flexible high-κ dielectrics with negative Poisson's ratios. Nat Commun 2023; 14:6555. [PMID: 37848484 PMCID: PMC10582060 DOI: 10.1038/s41467-023-42312-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/20/2023] [Accepted: 10/06/2023] [Indexed: 10/19/2023] Open
Abstract
During the last two decades, two-dimensional (2D) materials have been the focus of condensed matter physics and material science due to their promising fundamental properties and (opto-)electronic applications. However, high-κ 2D dielectrics that can be integrated within 2D devices are often missing. Here, we propose nonlayered oxide monolayers with calculated exfoliation energy as low as 0.39 J/m2 stemming from the ionic feature of the metal oxide bonds. We predict 51 easily or potentially exfoliable oxide monolayers, including metals and insulators/semiconductors, with intriguing physical properties such as ultra-high κ values, negative Poisson's ratios and large valley spin splitting. Among them, the most promising dielectric, GeO2, exhibits an auxetic effect, a κ value of 99, and forms type-I heterostructures with MoSe2 and HfSe2, with a band offset of ~1 eV. Our study opens the way for designing nonlayered 2D oxides, offering a platform for studying the rich physics in ultra-thin oxides and their potential applications in future information technologies.
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Affiliation(s)
- Yue Hu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China.
| | - Jingwen Jiang
- School of Information Engineering, Jiangmen Polytechnic, Jiangmen, China
| | - Peng Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, 518060, Shenzhen, China
| | - Zhuang Ma
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China
| | - Fuxin Guan
- Department of Physics, University of Hong Kong, Hong Kong, China
| | - Da Li
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China
| | - Zhengfang Qian
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, 518060, Shenzhen, China
| | - Xiuwen Zhang
- College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China.
- Renewable and Sustainable Energy Institute, University of Colorado, Boulder, CO, 80309, USA.
| | - Pu Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China.
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, 518060, Shenzhen, China.
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12
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Kwon YM, Lim YR, Bae G, Song DS, Jo HK, Park SY, Jang M, Yim S, Myung S, Lim J, Lee SS, Song W. Spectro-Microscopic Perceptions into Oxidation Behavior of Large-Scale Molybdenum Disulfide and its Photoelectrical Correlation. SMALL METHODS 2023; 7:e2300147. [PMID: 37317009 DOI: 10.1002/smtd.202300147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2023] [Revised: 05/15/2023] [Indexed: 06/16/2023]
Abstract
Despite the encouraging properties and research of 2D MoS2 , an ongoing issue associated with the oxidative instability remains elusive for practical optoelectronic applications. Thus, in-depth understanding of the oxidation behavior of large-scale and homogeneous 2D MoS2 is imperative. Here the structural and chemical transformations of large-area MoS2 multilayers by air-annealing with altered temperature and time via combinatorial spectro-microscopic analyses (Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy) are surveyed. The results gave indications pertaining to temperature- and time-dependent oxidation effects: i) heat-driven elimination of redundant residues, ii) internal strain stimulated by the formation of MoO bonds, iii) deterioration of the MoS2 crystallinity, iv) layer thinning, and v) morphological transformation from 2D MoS2 layers to particles. Photoelectrical characterization of the air-annealed MoS2 is implemented to capture the link between the oxidation behavior of MoS2 multilayers and their photoelectrical properties. The photocurrent based on MoS2 air-annealed at 200 °C is assessed to be 4.92 µA, which is 1.73 times higher than that of pristine MoS2 (2.84 µA). The diminution in the photocurrent of the photodetector based on MoS2 air-annealed above 300 °C in terms of the structural, chemical, and electrical conversions induced by the oxidation process is further discussed.
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Affiliation(s)
- Yeong Min Kwon
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Yi Rang Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Garam Bae
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Da Som Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Hyeong-Ku Jo
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Se Yeon Park
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Moonjeong Jang
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Soonmin Yim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Sung Myung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Jongsun Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Sun Sook Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Wooseok Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
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13
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Wang L, Papadopoulos S, Iyikanat F, Zhang J, Huang J, Taniguchi T, Watanabe K, Calame M, Perrin ML, García de Abajo FJ, Novotny L. Exciton-assisted electron tunnelling in van der Waals heterostructures. NATURE MATERIALS 2023; 22:1094-1099. [PMID: 37365227 PMCID: PMC10465355 DOI: 10.1038/s41563-023-01556-7] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Accepted: 04/17/2023] [Indexed: 06/28/2023]
Abstract
The control of elastic and inelastic electron tunnelling relies on materials with well-defined interfaces. Two-dimensional van der Waals materials are an excellent platform for such studies. Signatures of acoustic phonons and defect states have been observed in current-to-voltage measurements. These features can be explained by direct electron-phonon or electron-defect interactions. Here we use a tunnelling process that involves excitons in transition metal dichalcogenides (TMDs). We study tunnel junctions consisting of graphene and gold electrodes separated by hexagonal boron nitride with an adjacent TMD monolayer and observe prominent resonant features in current-to-voltage measurements appearing at bias voltages that correspond to TMD exciton energies. By placing the TMD outside of the tunnelling pathway, we demonstrate that this tunnelling process does not require any charge injection into the TMD. The appearance of such optical modes in electrical transport introduces additional functionality towards van der Waals material-based optoelectronic devices.
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Affiliation(s)
- Lujun Wang
- Photonics Laboratory, ETH Zürich, Zürich, Switzerland
| | | | - Fadil Iyikanat
- Institut de Ciències Fotòniques (ICFO), The Barcelona Institute of Science and Technology, Castelldefels, Spain
| | - Jian Zhang
- Transport at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland
| | - Jing Huang
- Photonics Laboratory, ETH Zürich, Zürich, Switzerland
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Michel Calame
- Transport at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland
- Department of Physics, University of Basel, Basel, Switzerland
- Swiss Nanoscience Institute, University of Basel, Basel, Switzerland
| | - Mickael L Perrin
- Transport at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland
- Department of Information Technology and Electrical Engineering, ETH Zürich, Zürich, Switzerland
- Quantum Center, ETH Zürich, Zürich, Switzerland
| | - F Javier García de Abajo
- Institut de Ciències Fotòniques (ICFO), The Barcelona Institute of Science and Technology, Castelldefels, Spain.
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain.
| | - Lukas Novotny
- Photonics Laboratory, ETH Zürich, Zürich, Switzerland.
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14
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Martyniuk P, Wang P, Rogalski A, Gu Y, Jiang R, Wang F, Hu W. Infrared avalanche photodiodes from bulk to 2D materials. LIGHT, SCIENCE & APPLICATIONS 2023; 12:212. [PMID: 37652900 PMCID: PMC10471776 DOI: 10.1038/s41377-023-01259-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Revised: 08/07/2023] [Accepted: 08/07/2023] [Indexed: 09/02/2023]
Abstract
Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one-optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of AIIIBV, AIIBVI, and potential alternatives to formerly mentioned-"third wave" superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device's performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in AIIIBV APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, "Ga-based" and "Ga-free"), and 2D materials-based IR APDs. The latter-atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed AIIIBV APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs' performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs' active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~105 for MWIR [wavelength, λ = 4 μm, temperature, T = 10-180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance-sensitivity and low excess noise.
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Affiliation(s)
- Piotr Martyniuk
- Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Street, 00-908, Warsaw, Poland.
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China.
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China
| | - Antoni Rogalski
- Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Street, 00-908, Warsaw, Poland
| | - Yue Gu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China
| | - Ruiqi Jiang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China
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15
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Völzer T, Schubert A, von der Oelsnitz E, Schröer J, Barke I, Schwartz R, Watanabe K, Taniguchi T, Speller S, Korn T, Lochbrunner S. Strong quenching of dye fluorescence in monomeric perylene orange/TMDC hybrid structures. NANOSCALE ADVANCES 2023; 5:3348-3356. [PMID: 37325541 PMCID: PMC10263002 DOI: 10.1039/d3na00276d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Accepted: 05/22/2023] [Indexed: 06/17/2023]
Abstract
Hybrid structures with an interface between two different materials with properly aligned energy levels facilitate photo-induced charge separation to be exploited in optoelectronic applications. Particularly, the combination of 2D transition metal dichalcogenides (TMDCs) and dye molecules offers strong light-matter interaction, tailorable band level alignments, and high fluorescence quantum yields. In this work, we aim at the charge or energy transfer-related quenching of the fluorescence of the dye perylene orange (PO) when isolated molecules are brought onto monolayer TMDCs via thermal vapor deposition. Here, micro-photoluminescence spectroscopy revealed a strong intensity drop of the PO fluorescence. For the TMDC emission, in contrast, we observed a relative growth of the trion versus exciton contribution. In addition, fluorescence imaging lifetime microscopy quantified the intensity quenching to a factor of about 103 and demonstrated a drastic lifetime reduction from 3 ns to values much shorter than the 100 ps width of the instrument response function. From the ratio of the intensity quenching that is attributed to hole or energy transfer from dye to semiconductor, we deduce a time constant of several picoseconds at most, pointing to an efficient charge separation suitable for optoelectronic devices.
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Affiliation(s)
- Tim Völzer
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Alina Schubert
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Erik von der Oelsnitz
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Julian Schröer
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Ingo Barke
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Rico Schwartz
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan
| | - Sylvia Speller
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Tobias Korn
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Stefan Lochbrunner
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
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16
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Semkin VA, Shabanov AV, Mylnikov DA, Kashchenko MA, Domaratskiy IK, Zhukov SS, Svintsov DA. Zero-Bias Photodetection in 2D Materials via Geometric Design of Contacts. NANO LETTERS 2023. [PMID: 37220075 DOI: 10.1021/acs.nanolett.3c01259] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Structural or crystal asymmetry is a necessary condition for the emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via p-n doping, which is a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in two-dimensional (2D) material flakes exploiting the geometrical nonequivalence of source and drain contacts. As a prototypical example, we equip a square-shaped flake of PdSe2 with mutually orthogonal metal leads. Upon uniform illumination with linearly polarized light, the device demonstrates nonzero photocurrent which flips its sign upon 90° polarization rotation. The origin of zero-bias photocurrent lies in a polarization-dependent lightning-rod effect. It enhances the electromagnetic field at one contact from the orthogonal pair and selectively activates the internal photoeffect at the respective metal-PdSe2 Schottky junction. The proposed technology of contact engineering is independent of a particular light-detection mechanism and can be extended to arbitrary 2D materials.
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Affiliation(s)
- Valentin A Semkin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Aleksandr V Shabanov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Dmitry A Mylnikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Mikhail A Kashchenko
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia
| | - Ivan K Domaratskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Sergey S Zhukov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - Dmitry A Svintsov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
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17
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Kumbhakar P, Jayan JS, Sreedevi Madhavikutty A, Sreeram P, Saritha A, Ito T, Tiwary CS. Prospective applications of two-dimensional materials beyond laboratory frontiers: A review. iScience 2023; 26:106671. [PMID: 37168568 PMCID: PMC10165413 DOI: 10.1016/j.isci.2023.106671] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/13/2023] Open
Abstract
The development of nanotechnology has been advancing for decades and gained acceleration in the 21st century. Two-dimensional (2D) materials are widely available, giving them a wide range of material platforms for technological study and the advancement of atomic-level applications. The design and application of 2D materials are discussed in this review. In order to evaluate the performance of 2D materials, which might lead to greater applications benefiting the electrical and electronics sectors as well as society, the future paradigm of 2D materials needs to be visualized. The development of 2D hybrid materials with better characteristics that will help industry and society at large is anticipated to result from intensive research in 2D materials. This enhanced evaluation might open new opportunities for the synthesis of 2D materials and the creation of devices that are more effective than traditional ones in various sectors of application.
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Affiliation(s)
- Partha Kumbhakar
- Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302 India
- Department of Physics and Electronics, CHRIST (Deemed to Be University), Bangalore 560029, India
| | - Jitha S. Jayan
- Department of Chemistry, National Institute of Technology Calicut, Calicut, Kerala, India
- Department of Chemistry, Amrita Vishwa Vidyapeetham, Amritapuri, Kollam, Kerala, India
| | | | - P.R. Sreeram
- Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302 India
| | - Appukuttan Saritha
- Department of Chemistry, Amrita Vishwa Vidyapeetham, Amritapuri, Kollam, Kerala, India
| | - Taichi Ito
- Department of Chemical System Engineering, The University of Tokyo, Tokyo 113-0033, Japan
- Center for Disease Biology and Integrative Medicine, Faculty of Medicine, The University of Tokyo, Tokyo 113-0033, Japan
| | - Chandra Sekhar Tiwary
- Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302 India
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18
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Pham PV, Mai TH, Do HB, Ponnusamy VK, Chuang FC. Integrated Graphene Heterostructures in Optical Sensing. MICROMACHINES 2023; 14:mi14051060. [PMID: 37241683 DOI: 10.3390/mi14051060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2023] [Revised: 05/14/2023] [Accepted: 05/14/2023] [Indexed: 05/28/2023]
Abstract
Graphene-an outstanding low-dimensional material-exhibited many physics behaviors that are unknown over the past two decades, e.g., exceptional matter-light interaction, large light absorption band, and high charge carrier mobility, which can be adjusted on arbitrary surfaces. The deposition approaches of graphene on silicon to form the heterostructure Schottky junctions was studied, unveiling new roadmaps to detect the light at wider-ranged absorption spectrums, e.g., far-infrared via excited photoemission. In addition, heterojunction-assisted optical sensing systems enable the active carriers' lifetime and, thereby, accelerate the separation speed and transport, and then they pave new strategies to tune high-performance optoelectronics. In this mini-review, an overview is considered concerning recent advancements in graphene heterostructure devices and their optical sensing ability in multiple applications (ultrafast optical sensing system, plasmonic system, optical waveguide system, optical spectrometer, or optical synaptic system) is discussed, in which the prominent studies for the improvement of performance and stability, based on the integrated graphene heterostructures, have been reported and are also addressed again. Moreover, the pros and cons of graphene heterostructures are revealed along with the syntheses and nanofabrication sequences in optoelectronics. Thereby, this gives a variety of promising solutions beyond the ones presently used. Eventually, the development roadmap of futuristic modern optoelectronic systems is predicted.
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Affiliation(s)
- Phuong V Pham
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - The-Hung Mai
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Huy-Binh Do
- Faculty of Applied Science, Ho Chi Minh City University of Technology and Education, Ho Chi Minh City 700000, Vietnam
| | - Vinoth Kumar Ponnusamy
- Department of Medicinal and Applied Chemistry and Research Center for Precision Environmental Medicine, Kaohsiung Medical University (KMU), Kaohsiung 807, Taiwan
- Department of Medical Research, Kaohsiung Medical University Hospital (KMUH), Kaohsiung 807, Taiwan
- Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Feng-Chuan Chuang
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei 10617, Taiwan
- Center for Theoretical and Computational Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
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19
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Chiu SK, Li MC, Ci JW, Hung YC, Tsai DS, Chen CH, Lin LH, Watanabe K, Taniguchi T, Aoki N, Hsieh YP, Chuang C. Enhancing optical characteristics of mediator-assisted wafer-scale MoS 2and WS 2on h-BN. NANOTECHNOLOGY 2023; 34:255703. [PMID: 36944230 DOI: 10.1088/1361-6528/acc5f1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Accepted: 03/20/2023] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials and their heterostructures exhibit intriguing optoelectronic properties; thus, they are good platforms for exploring fundamental research and further facilitating real device applications. The key is to preserve the high quality and intrinsic properties of 2D materials and their heterojunction interface even in production scale during the transfer and assembly process so as to apply in semiconductor manufacturing field. In this study, we successfully adopted a wet transfer existing method to separate mediator-assisted wafer-scale from SiO2/Si growing wafer for the first time with intermediate annealing to fabricate wafer-scale MoS2/h-BN and WS2/h-BN heterostructures on a SiO2/Si wafer. Interestingly, the high-quality wafer-scale 2D material heterostructure optical properties were enhanced and confirmed by Raman and photoluminescence spectroscopy. Our approach can be applied to other 2D materials and expedite mass production for industrial applications.
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Affiliation(s)
- Sheng-Kuei Chiu
- Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan
| | - Ming-Chi Li
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Ji-Wei Ci
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Yuan-Chih Hung
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Dung-Sheng Tsai
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
- Research Center for Semiconductor Materials and Advanced Optics, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Chien-Han Chen
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Li-Hung Lin
- Department of Electrophysics, National Chiayi University, Chiayi 600, Taiwan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Nobuyuki Aoki
- Department of Materials Science, Chiba University, Chiba 263-8522, Japan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Chiashain Chuang
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
- Research Center for Semiconductor Materials and Advanced Optics, Chung Yuan Christian University, Taoyuan 320, Taiwan
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20
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Zhang M, Han N, Zhang J, Wang J, Chen X, Zhao J, Gan X. Emergent second-harmonic generation in van der Waals heterostructure of bilayer MoS 2 and monolayer graphene. SCIENCE ADVANCES 2023; 9:eadf4571. [PMID: 36921058 PMCID: PMC10017043 DOI: 10.1126/sciadv.adf4571] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2022] [Accepted: 02/14/2023] [Indexed: 05/29/2023]
Abstract
Van der Waals (vdW) stacking of two-dimensional (2D) materials to create artificial structures has enabled remarkable discoveries and novel properties in fundamental physics. Here, we report that vdW stacking of centrosymmetric 2D materials, e.g., bilayer MoS2 (2LM) and monolayer graphene (1LG), could support remarkable second-harmonic generation (SHG). The required centrosymmetry breaking for second-order hyperpolarizability arises from the interlayer charge transfer between 2LM and 1LG and the imbalanced charge distribution in 2LM, which are verified by first-principles calculations, Raman spectroscopy, and polarization-resolved SHG. The strength of SHG from 2LM/1LG is of the same order of magnitude as that from the monolayer MoS2, which is well recognized with strong second-order nonlinearity. The emergent SHG reveals that the interlayer charge transfer can effectively modify the symmetry and nonlinear optical properties of 2D heterostructures. It also indicates the great opportunity of SHG spectroscopy for characterizing interlayer coupling in vdW heterostructures.
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Affiliation(s)
- Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics, Xi’an Institute of Flexible Electronics (IFE), and Xi’an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi’an 710129, China
| | - Jiachen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
- School of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, China
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21
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Pincelli T, Vasileiadis T, Dong S, Beaulieu S, Dendzik M, Zahn D, Lee SE, Seiler H, Qi Y, Xian RP, Maklar J, Coy E, Mueller NS, Okamura Y, Reich S, Wolf M, Rettig L, Ernstorfer R. Observation of Multi-Directional Energy Transfer in a Hybrid Plasmonic-Excitonic Nanostructure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209100. [PMID: 36482148 DOI: 10.1002/adma.202209100] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Revised: 11/29/2022] [Indexed: 06/17/2023]
Abstract
Hybrid plasmonic devices involve a nanostructured metal supporting localized surface plasmons to amplify light-matter interaction, and a non-plasmonic material to functionalize charge excitations. Application-relevant epitaxial heterostructures, however, give rise to ballistic ultrafast dynamics that challenge the conventional semiclassical understanding of unidirectional nanometal-to-substrate energy transfer. Epitaxial Au nanoislands are studied on WSe2 with time- and angle-resolved photoemission spectroscopy and femtosecond electron diffraction: this combination of techniques resolves material, energy, and momentum of charge-carriers and phonons excited in the heterostructure. A strong non-linear plasmon-exciton interaction that transfers the energy of sub-bandgap photons very efficiently to the semiconductor is observed, leaving the metal cold until non-radiative exciton recombination heats the nanoparticles on hundreds of femtoseconds timescales. The results resolve a multi-directional energy exchange on timescales shorter than the electronic thermalization of the nanometal. Electron-phonon coupling and diffusive charge-transfer determine the subsequent energy flow. This complex dynamics opens perspectives for optoelectronic and photocatalytic applications, while providing a constraining experimental testbed for state-of-the-art modelling.
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Affiliation(s)
- Tommaso Pincelli
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623, Berlin, Germany
| | - Thomas Vasileiadis
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Faculty of Physics, Adam Mickiewicz University, Uniwersytetu Poznanskiego 2, Poznan, 61-614, Poland
| | - Shuo Dong
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
| | - Samuel Beaulieu
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Université de Bordeaux - CNRS - CEA, CELIA, UMR5107, Talence, F33405, France
| | - Maciej Dendzik
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Department of Applied Physics, KTH Royal Institute of Technology, Hannes Alfvéns väg 12, Stockholm, 114 19, Sweden
| | - Daniela Zahn
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
| | - Sang-Eun Lee
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
| | - Hélène Seiler
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Freie Universität Berlin, Arnimallee 14, 14195, Berlin, Germany
| | - Yingpeng Qi
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - R Patrick Xian
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Department of Statistical Sciences, University of Toronto, 700 University Avenue, Toronto, M5G 1Z5, Canada
| | - Julian Maklar
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
| | - Emerson Coy
- NanoBioMedical Centre, Adam Mickiewicz University, ul. Wszechnicy Piastowskiej 3, Poznań, PL 61614, Poland
| | - Niclas S Mueller
- Freie Universität Berlin, Arnimallee 14, 14195, Berlin, Germany
- NanoPhotonics Centre, Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge, CB30HE, UK
| | - Yu Okamura
- Freie Universität Berlin, Arnimallee 14, 14195, Berlin, Germany
| | - Stephanie Reich
- Freie Universität Berlin, Arnimallee 14, 14195, Berlin, Germany
| | - Martin Wolf
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
| | - Laurenz Rettig
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
| | - Ralph Ernstorfer
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
- Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623, Berlin, Germany
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Babar ZUD, Raza A, Cassinese A, Iannotti V. Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective. Molecules 2023; 28:molecules28052275. [PMID: 36903520 PMCID: PMC10005545 DOI: 10.3390/molecules28052275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 02/05/2023] [Accepted: 02/16/2023] [Indexed: 03/05/2023] Open
Abstract
Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.
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Affiliation(s)
- Zaheer Ud Din Babar
- Scuola Superiore Meridionale (SSM), University of Naples Federico II, Largo S. Marcellino 10, 80138 Naples, Italy
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
| | - Ali Raza
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
| | - Antonio Cassinese
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
- CNR–SPIN (Institute for Superconductors, Oxides and Other Innovative Materials and Devices), Piazzale V. Tecchio 80, 80125 Naples, Italy
| | - Vincenzo Iannotti
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
- CNR–SPIN (Institute for Superconductors, Oxides and Other Innovative Materials and Devices), Piazzale V. Tecchio 80, 80125 Naples, Italy
- Correspondence:
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23
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Aggarwal D, Narula R, Ghosh S. A primer on twistronics: a massless Dirac fermion's journey to moiré patterns and flat bands in twisted bilayer graphene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:143001. [PMID: 36745922 DOI: 10.1088/1361-648x/acb984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Accepted: 02/06/2023] [Indexed: 06/18/2023]
Abstract
The recent discovery of superconductivity in magic-angle twisted bilayer graphene (TBLG) has sparked a renewed interest in the strongly-correlated physics ofsp2carbons, in stark contrast to preliminary investigations which were dominated by the one-body physics of the massless Dirac fermions. We thus provide a self-contained, theoretical perspective of the journey of graphene from its single-particle physics-dominated regime to the strongly-correlated physics of the flat bands. Beginning from the origin of the Dirac points in condensed matter systems, we discuss the effect of the superlattice on the Fermi velocity and Van Hove singularities in graphene and how it leads naturally to investigations of the moiré pattern in van der Waals heterostructures exemplified by graphene-hexagonal boron-nitride and TBLG. Subsequently, we illuminate the origin of flat bands in TBLG at the magic angles by elaborating on a broad range of prominent theoretical works in a pedagogical way while linking them to available experimental support, where appropriate. We conclude by providing a list of topics in the study of the electronic properties of TBLG not covered by this review but may readily be approached with the help of this primer.
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Affiliation(s)
| | - Rohit Narula
- Department of Physics, IIT Delhi, Hauz Khas, New Delhi, India
| | - Sankalpa Ghosh
- Department of Physics, IIT Delhi, Hauz Khas, New Delhi, India
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Xu L, Tao J, Xiao B, Xiong F, Ma Z, Zeng J, Huang X, Tang S, Wang LL. Two-dimensional AlN/g-CNs van der Waals type-II heterojunction for water splitting. Phys Chem Chem Phys 2023; 25:3969-3978. [PMID: 36648388 DOI: 10.1039/d2cp05230j] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Abstract
A type-II van der Waals heterojunction photocatalyst is not only an ideal material for hydrogen production by water splitting, but also an important way to improve efficiency and produce low-cost clean energy. In this work, we unexpectedly found that monolayers of AlN and C2N, g-C3N4, and C6N8 all formed type-II heterojunctions according to density functional theory, and we report a comparison of their photocatalytic performance. Among them, the AlN/C2N heterojunction has an appropriate band gap value of 1.61 eV for visible light water splitting. It has higher carrier mobility than the AlN/g-C3N4 heterojunction (electron 253.1 cm2 V-1 s-1 > 31.6 cm2 V-1 s-1 and hole 11043.4 cm2 V-1 s-1 > 524.7 cm2 V-1 s-1), and an absorption peak similar those of monolayer C2N in visible light (8 × 104 cm-1) and monolayer AlN in ultraviolet light (11 × 104 cm-1). The Bader charge shows that the charge transfer number of the AlN/g-C3N4 heterojunction is higher than that of the AlN/C2N heterojunction, and its Gibbs free energy (-0.22 eV) is smaller than that of single-layer g-C3N4 (-0.30 eV). The AlN/C6N8 heterojunction also has a perfect band gap of 2.16 eV and an absorption peak of over 10 × 104 cm-1 in the UV region. Since a type-II heterojunction can effectively promote the separation of photogenerated electron-hole pairs and prevent their rapid recombination, the above heterojunctions are promising candidates for new photocatalysts.
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Affiliation(s)
- Liang Xu
- Energy Materials Computing Center, School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang 330013, China. .,Jiangxi Provincial Key Laboratory for Simulation and Modelling of Particulate Systems, Jiangxi University of Science and Technology, Nanchang 330013, China.,Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Ji Tao
- Energy Materials Computing Center, School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang 330013, China.
| | - Bin Xiao
- Energy Materials Computing Center, School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang 330013, China.
| | - Feilong Xiong
- Energy Materials Computing Center, School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang 330013, China.
| | - Zongle Ma
- Energy Materials Computing Center, School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang 330013, China.
| | - Jian Zeng
- Energy Materials Computing Center, School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang 330013, China.
| | - Xin Huang
- Energy Materials Computing Center, School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang 330013, China.
| | - Shuaihao Tang
- Energy Materials Computing Center, School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang 330013, China.
| | - Ling-Ling Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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26
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Wu J, Yang D, Liang J, Werner M, Ostroumov E, Xiao Y, Watanabe K, Taniguchi T, Dadap JI, Jones D, Ye Z. Ultrafast response of spontaneous photovoltaic effect in 3R-MoS 2-based heterostructures. SCIENCE ADVANCES 2022; 8:eade3759. [PMID: 36525495 PMCID: PMC9757740 DOI: 10.1126/sciadv.ade3759] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Accepted: 11/14/2022] [Indexed: 06/17/2023]
Abstract
Rhombohedrally stacked MoS2 has been shown to exhibit spontaneous polarization down to the bilayer limit and can sustain a strong depolarization field when sandwiched between graphene. Such a field gives rise to a spontaneous photovoltaic effect without needing any p-n junction. In this work, we show that the photovoltaic effect has an external quantum efficiency of 10% for devices with only two atomic layers of MoS2 at low temperatures, and identify a picosecond-fast photocurrent response, which translates to an intrinsic device bandwidth at ∼100-GHz level. To this end, we have developed a nondegenerate pump-probe photocurrent spectroscopy technique to deconvolute the thermal and charge-transfer processes, thus successfully revealing the multicomponent nature of the photocurrent dynamics. The fast component approaches the limit of the charge-transfer speed at the graphene-MoS2 interface. The remarkable efficiency and ultrafast photoresponse in the graphene-3R-MoS2 devices support the use of ferroelectric van der Waals materials for future high-performance optoelectronic applications.
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Affiliation(s)
- Jingda Wu
- Department of Physics and Astronomy, The University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1, Canada
- Stewart Blusson Quantum Matter Institute, The University of British Columbia, 2355 East Mall, Vancouver, BC V6T 1Z4, Canada
| | - Dongyang Yang
- Department of Physics and Astronomy, The University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1, Canada
- Stewart Blusson Quantum Matter Institute, The University of British Columbia, 2355 East Mall, Vancouver, BC V6T 1Z4, Canada
| | - Jing Liang
- Department of Physics and Astronomy, The University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1, Canada
- Stewart Blusson Quantum Matter Institute, The University of British Columbia, 2355 East Mall, Vancouver, BC V6T 1Z4, Canada
| | - Max Werner
- Department of Physics and Astronomy, The University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1, Canada
- Stewart Blusson Quantum Matter Institute, The University of British Columbia, 2355 East Mall, Vancouver, BC V6T 1Z4, Canada
| | - Evgeny Ostroumov
- Department of Physics and Astronomy, The University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1, Canada
- Stewart Blusson Quantum Matter Institute, The University of British Columbia, 2355 East Mall, Vancouver, BC V6T 1Z4, Canada
| | - Yunhuan Xiao
- Department of Physics and Astronomy, The University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1, Canada
- Stewart Blusson Quantum Matter Institute, The University of British Columbia, 2355 East Mall, Vancouver, BC V6T 1Z4, Canada
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jerry I. Dadap
- Department of Physics and Astronomy, The University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1, Canada
- Stewart Blusson Quantum Matter Institute, The University of British Columbia, 2355 East Mall, Vancouver, BC V6T 1Z4, Canada
| | - David Jones
- Department of Physics and Astronomy, The University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1, Canada
- Stewart Blusson Quantum Matter Institute, The University of British Columbia, 2355 East Mall, Vancouver, BC V6T 1Z4, Canada
| | - Ziliang Ye
- Department of Physics and Astronomy, The University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1, Canada
- Stewart Blusson Quantum Matter Institute, The University of British Columbia, 2355 East Mall, Vancouver, BC V6T 1Z4, Canada
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27
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Large in-plane vibrational and optical anisotropy in natural 2D heterostructure abramovite. Sci Rep 2022; 12:16803. [PMID: 36207449 PMCID: PMC9547020 DOI: 10.1038/s41598-022-21042-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 09/22/2022] [Indexed: 11/08/2022] Open
Abstract
The design and formation of van der Waals (vdW) heterostructures with different two-dimensional (2D) materials provide an opportunity to create materials with extraordinary physical properties tailored toward specific applications. Mechanical exfoliation of natural vdW materials has been recognized as an effective way for producing high-quality ultrathin vdW heterostructures. Abramovite is one of such naturally occurring vdW materials, where the superlattice is composed of alternating Pb2BiS3 and SnInS4 2D material lattices. The forced commensuration between the two incommensurate constituent 2D material lattices induces in-plane structural anisotropy in the formed vdW heterostructure of abramovite, even though the individual 2D material lattices are isotropic in nature. Here, we show that ultrathin layers of vdW heterostructures of abramovite can be achieved by mechanical exfoliation of the natural mineral. Furthermore, the structural anisotropy induced highly anisotropic vibrational and optical responses of abramovite thin flakes are demonstrated by angle-resolved polarized Raman scattering, linear dichroism, and polarization-dependent third-harmonic generation. Our results not only establish abramovite as a promising natural vdW material with tailored linear and nonlinear optical properties for building future anisotropic integrated photonic devices, but also provide a deeper understanding of the origin of structural, vibrational and optical anisotropy in vdW heterostructures.
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Lu J, Ye Q, Ma C, Zheng Z, Yao J, Yang G. Dielectric Contrast Tailoring for Polarized Photosensitivity toward Multiplexing Optical Communications and Dynamic Encrypt Technology. ACS NANO 2022; 16:12852-12865. [PMID: 35914000 DOI: 10.1021/acsnano.2c05114] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A selective-area oxidation strategy is developed to polarize high-symmetry 2D layered materials (2DLMs). The dichroic ratio of the derived O-WS2/WS2 photodetector reaches ∼8, which is competitive among state-of-the-art polarization photodetectors. Finite-different time-domain simulations consolidate that the polarization-sensitive photoresponse is associated with anisotropic spacial confinement, which gives rise to distinct dielectric contrasts for linearly polarized light of various directions and thus the polarization-dependent near-field distribution. Furthermore, selective-area oxidation treatment brings about dual effects, comprising the in situ formation of seamless in-plane WS2 homojunctions by thickness tailoring and the formation of out-of-plane O-WS2/WS2 heterojunctions. As a consequence, the recombination of photocarriers is markedly suppressed, resulting in outstanding photosensitivity with the optimized responsivity, external quantum efficiency, and detectivity of 0.161 A/W, 49.4%, and 1.4 × 1011 Jones for an O-WS2/WS2 photodetector in a self-powered mode. A scheme of multiplexing optical communications is revealed by harnessing the intensity and polarization state of light as independent transmission channels. Furthermore, dynamic encryption by leveraging the polarization state as a secret key is proposed. In the end, broad universality is reinforced through the induction of linear dichroism within 2D WSe2 crystals. On the whole, this study provides an additional perspective on polarization optoelectronics based on 2DLMs.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou 511443, China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
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Beckmann Y, Grundmann A, Daniel L, Abdelbaky M, McAleese C, Wang X, Conran B, Pasko S, Krotkus S, Heuken M, Kalisch H, Vescan A, Mertin W, Kümmell T, Bacher G. Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene-MoS 2 Heterostructure Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:35184-35193. [PMID: 35852455 DOI: 10.1021/acsami.2c06047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A promising strategy toward ultrathin, sensitive photodetectors is the combination of a photoactive semiconducting transition-metal dichalcogenide (TMDC) monolayer like MoS2 with highly conductive graphene. Such devices often exhibit a complex and contradictory photoresponse as incident light can trigger both photoconductivity and photoinduced desorption of molecules from the surface. Here, we use metal-organic chemical vapor deposition (MOCVD) to directly grow MoS2 on top of graphene that is deposited on a sapphire wafer via chemical vapor deposition (CVD) for realizing graphene-MoS2 photodetectors. Two-color optical pump-electrical probe experiments allow for separation of light-induced carrier transfer across the graphene-MoS2 heterointerface from adsorbate-induced effects. We demonstrate that adsorbates strongly modify both magnitude and sign of the photoconductivity. This is attributed to a change of the graphene doping from p- to n-type in case adsorbates are being desorbed, while in either case, photogenerated electrons are transferred from MoS2 to graphene. This nondestructive probing method sheds light on the charge carrier transfer mechanisms and the role of adsorbates in two-dimensional (2D) heterostructure photodetectors.
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Affiliation(s)
- Yannick Beckmann
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, 47057 Duisburg, Germany
| | - Annika Grundmann
- Compound Semiconductor Technology, RWTH Aachen University, 52074 Aachen, Germany
| | - Leon Daniel
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, 47057 Duisburg, Germany
| | - Mohamed Abdelbaky
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, 47057 Duisburg, Germany
| | | | | | | | | | | | - Michael Heuken
- Compound Semiconductor Technology, RWTH Aachen University, 52074 Aachen, Germany
- AIXTRON SE, 52134 Herzogenrath, Germany
| | - Holger Kalisch
- Compound Semiconductor Technology, RWTH Aachen University, 52074 Aachen, Germany
| | - Andrei Vescan
- Compound Semiconductor Technology, RWTH Aachen University, 52074 Aachen, Germany
| | - Wolfgang Mertin
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, 47057 Duisburg, Germany
| | - Tilmar Kümmell
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, 47057 Duisburg, Germany
| | - Gerd Bacher
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, 47057 Duisburg, Germany
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Liu H, Wang J, Liu Y, Wang Y, Xu L, Huang L, Liu D, Luo J. Visualizing Ultrafast Defect-Controlled Interlayer Electron-Phonon Coupling in Van der Waals Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106955. [PMID: 35474352 DOI: 10.1002/adma.202106955] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2021] [Revised: 03/19/2022] [Indexed: 06/14/2023]
Abstract
Engineering ultrafast interlayer coupling provides access to new quantum phenomena and novel device functionalities in atomically thin van der Waals heterostructures. However, due to all the atoms of a monolayer material being exposed at the interfaces, the interlayer coupling is extremely susceptible to defects, resulting in high energy dissipation through heat and low device performance. The study of how defects affect the interlayer coupling at ultrafast and atomic scales remains a challenge. Here, using femtosecond transient absorption microscopy, a new defect-induced ultrafast interlayer electron-phonon coupling pathway is identified in a WS2 /graphene heterostructure, involving a three-body collision between electrons in WS2 and both acoustic phonons and defects in graphene. This interaction manifests as the reduced defect-related Raman resonant activity and the accelerated electron-phonon scattering time from 7.1 to 2.4 ps. Furthermore, the ultrafast interlayer coupling process is directly imaged. These insights will advance the fundamental knowledge of heat dissipation in nanoscale devices, and enable new ways to dynamically manipulate electrons and phonons via defects in van der Waals heterostructures.
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Affiliation(s)
- Huan Liu
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Jiangcai Wang
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Yuanshuang Liu
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Yong Wang
- Research Center for Quantum Optics and Quantum Communication, School of Science, Qingdao University of Technology, Qingdao, 266525, China
| | - Lujie Xu
- School of Instrument Science and Opto-Electronics Engineering, Beijing Information Science and Technology University, Beijing, 100192, China
| | - Li Huang
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Dameng Liu
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
| | - Jianbin Luo
- State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China
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31
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Dasgupta A, Yang X, Gao J. Natural 2D layered mineral cannizzarite with anisotropic optical responses. Sci Rep 2022; 12:10006. [PMID: 35705652 PMCID: PMC9200787 DOI: 10.1038/s41598-022-14046-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2022] [Accepted: 05/31/2022] [Indexed: 11/09/2022] Open
Abstract
Cannizzarite is a naturally occurring mineral formed by van der Waals (vdW) stacking of alternating layers of PbS-like and Bi2S3-like two-dimensional (2D) materials. Although the PbS-type and Bi2S3-type 2D material layers are structurally isotropic individually, the forced commensuration between these two types of layers while forming the heterostructure of cannizzarite induces strong structural anisotropy. Here we demonstrate the mechanical exfoliation of natural cannizzarite mineral to obtain thin vdW heterostructures of PbS-type and Bi2S3-type atomic layers. The structural anisotropy induced anisotropic optical properties of thin cannizzarite flakes are explored through angle-resolved polarized Raman scattering, linear dichroism, and polarization-dependent anisotropic third-harmonic generation. Our study establishes cannizzarite as a new natural vdW heterostructure-based 2D material with highly anisotropic optical properties for realizing polarization-sensitive linear and nonlinear photonic devices for future on-chip optical computing and optical information processing.
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Affiliation(s)
- Arindam Dasgupta
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA
| | - Xiaodong Yang
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA.
| | - Jie Gao
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA. .,Department of Mechanical Engineering, Stony Brook University, Stony Brook, NY, 11794, USA.
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32
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Islam KM, Ismael T, Luthy C, Kizilkaya O, Escarra MD. Large-Area, High-Specific-Power Schottky-Junction Photovoltaics from CVD-Grown Monolayer MoS 2. ACS APPLIED MATERIALS & INTERFACES 2022; 14:24281-24289. [PMID: 35594152 PMCID: PMC9164198 DOI: 10.1021/acsami.2c01650] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/26/2022] [Accepted: 05/08/2022] [Indexed: 06/15/2023]
Abstract
The deployment of two-dimensional (2D) materials for solar energy conversion requires scalable large-area devices. Here, we present the design, modeling, fabrication, and characterization of monolayer MoS2-based lateral Schottky-junction photovoltaic (PV) devices grown by using chemical vapor deposition (CVD). The device design consists of asymmetric Ti and Pt metal contacts with a work function offset to enable charge separation. These early stage devices show repeatable performance under 1 sun illumination, with VOC of 160 mV, JSC of 0.01 mA/cm2, power conversion efficiency of 0.0005%, and specific power of 1.58 kW/kg. An optoelectronic model for this device is developed and validated with experimental results. This model is used to understand loss mechanisms and project optimized device designs. The model predicts that a 2D PV device with ∼70 kW/kg of specific power can be achieved with minimum optimization to the current devices. By increasing the thickness of the absorber layer, we can achieve even higher performance devices. Finally, a 25 mm2 area solar cell made with a 0.65 nm thick MoS2 monolayer is demonstrated, showing VOC of 210 mV under 1 sun illumination. This is the first demonstration of a large-area PV device made with CVD-grown scalable 2D materials.
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Affiliation(s)
- Kazi M. Islam
- Department
of Physics and Engineering Physics, Tulane
University, New Orleans, Louisiana 70118, United States
| | - Timothy Ismael
- Department
of Physics and Engineering Physics, Tulane
University, New Orleans, Louisiana 70118, United States
| | - Claire Luthy
- Department
of Physics and Engineering Physics, Tulane
University, New Orleans, Louisiana 70118, United States
| | - Orhan Kizilkaya
- Center
for Advanced Microstructures & Devices, Louisiana State University, Baton Rouge, Louisiana 70806, United States
| | - Matthew D. Escarra
- Department
of Physics and Engineering Physics, Tulane
University, New Orleans, Louisiana 70118, United States
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33
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Xing X, Zhang Z, Quan C, Zhao L, Wang C, Jia T, Ren J, Du J, Leng Y. Tunable ultrafast electron transfer in WSe 2-graphene heterostructures enabled by atomic stacking order. NANOSCALE 2022; 14:7418-7425. [PMID: 35543212 DOI: 10.1039/d1nr07698a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Efficient interfacial light-electric interconversion in van der Waals (vdW) heterostructures is crucial for their optoelectronic applications. However, an in-depth understanding of the necessary process for device operation, namely interfacial charge transfer (CT), has thus far remained elusive. In this study, by using photon energy-dependent transient THz spectroscopy, we complementarily investigate the interfacial CT process in heterostructures comprising monolayers of WSe2 and graphene with varying stacking orders on a sapphire substrate. We observe that the CT mechanism of the sub-A-exciton excitation is different from that of the above-A-exciton excitation. Notably, the CT process occurs via a photo-thermionic emission for sub-A-exciton excitations and a direct electron (or hole) transfer for above-A-exciton excitations. Furthermore, we demonstrate that the effective electric field induced by the sapphire substrate could adjust the Schottky barrier from a p-type contact (WSe2/Gr/sapphire) to an n-type contact (Gr/WSe2/sapphire). Consequently, it is more beneficial for the photo-thermionic electrons to transfer from graphene to WSe2 over the Schottky barrier in Gr/WSe2/sapphire. These results can provide new insights into the CT process in graphene-transition metal dichalcogenide (TMDC) vdW interfaces, which are critical to potential optoelectronic applications of graphene-TMDC heterostructures.
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Affiliation(s)
- Xiao Xing
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.
| | - Zeyu Zhang
- Hangzhou Institute for Advanced Study and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Hangzhou 310024, China.
| | - Chenjing Quan
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.
- School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Litao Zhao
- Key Laboratory of Spin Electron and Nanomaterials of Anhui Higher Education Institutes, Suzhou University, Suzhou 234000, People's Republic of China
| | - Chunwei Wang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.
| | - Tingyuan Jia
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.
| | - Junfeng Ren
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Juan Du
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.
- Hangzhou Institute for Advanced Study and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Hangzhou 310024, China.
| | - Yuxin Leng
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.
- Hangzhou Institute for Advanced Study and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Hangzhou 310024, China.
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34
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Maier A, Strauß F, Kohlschreiber P, Schedel C, Braun K, Scheele M. Sub-nanosecond Intrinsic Response Time of PbS Nanocrystal IR-Photodetectors. NANO LETTERS 2022; 22:2809-2816. [PMID: 35311295 DOI: 10.1021/acs.nanolett.1c04938] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Colloidal nanocrystals (NCs), especially lead sulfide NCs, are promising candidates for solution-processed next-generation photodetectors with high-speed operation frequencies. However, the intrinsic response time of PbS-NC photodetectors, which is the material-specific physical limit, is still elusive, as the reported response times are typically limited by the device geometry. Here, we use the two-pulse coincidence photoresponse technique to identify the intrinsic response time of 1,2-ethanedithiol-functionalized PbS-NC photodetectors after femtosecond-pulsed 1560 nm excitation. We obtain an intrinsic response time of ∼1 ns, indicating an intrinsic bandwidth of ∼0.55 GHz as the material-specific limit. Examination of the dependence on laser power, gating, bias, temperature, channel length, and environmental conditions suggest that Auger recombination, assisted by NC-surface defects, is the dominant mechanism. Accordingly, the intrinsic response time might further be tuned by specifically controlling the ligand coverage and trap states. Thus, PbS-NC photodetectors are feasible for gigahertz optical communication in the third telecommunication window.
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Affiliation(s)
- Andre Maier
- Institute of Physical and Theoretical Chemistry, Universität Tübingen, Auf der Morgenstelle 18, D-72076Tübingen, Germany
- Center for Light-Matter Interaction, Sensors and Analytics LISA+, Universität Tübingen, Auf der Morgenstelle 15, D-72076 Tübingen, Germany
| | - Fabian Strauß
- Institute of Physical and Theoretical Chemistry, Universität Tübingen, Auf der Morgenstelle 18, D-72076Tübingen, Germany
- Center for Light-Matter Interaction, Sensors and Analytics LISA+, Universität Tübingen, Auf der Morgenstelle 15, D-72076 Tübingen, Germany
| | - Pia Kohlschreiber
- Institute of Physical and Theoretical Chemistry, Universität Tübingen, Auf der Morgenstelle 18, D-72076Tübingen, Germany
- Center for Light-Matter Interaction, Sensors and Analytics LISA+, Universität Tübingen, Auf der Morgenstelle 15, D-72076 Tübingen, Germany
| | - Christine Schedel
- Institute of Physical and Theoretical Chemistry, Universität Tübingen, Auf der Morgenstelle 18, D-72076Tübingen, Germany
| | - Kai Braun
- Institute of Physical and Theoretical Chemistry, Universität Tübingen, Auf der Morgenstelle 18, D-72076Tübingen, Germany
- Center for Light-Matter Interaction, Sensors and Analytics LISA+, Universität Tübingen, Auf der Morgenstelle 15, D-72076 Tübingen, Germany
| | - Marcus Scheele
- Institute of Physical and Theoretical Chemistry, Universität Tübingen, Auf der Morgenstelle 18, D-72076Tübingen, Germany
- Center for Light-Matter Interaction, Sensors and Analytics LISA+, Universität Tübingen, Auf der Morgenstelle 15, D-72076 Tübingen, Germany
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35
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Picosecond energy transfer in a transition metal dichalcogenide-graphene heterostructure revealed by transient Raman spectroscopy. Proc Natl Acad Sci U S A 2022; 119:e2119726119. [PMID: 35380900 PMCID: PMC9169783 DOI: 10.1073/pnas.2119726119] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022] Open
Abstract
Hot carrier–based energy harvesting is critically implied in the performances of optoelectronic devices based on van der Waals heterostructures composed by graphene (Gr) and monolayer transition metal dichalcogenides (TMD). The way electron–hole couples initially photogenerated in the TMD are converted into an electric current in Gr is a controversial issue. In this work we identify the interlayer interaction occurring during the first picoseconds following photoexcitation as an energy transfer process that is much faster than (other) photogating phenomena implied in optoelectronic applications. Intense light–matter interactions and unique structural and electrical properties make van der Waals heterostructures composed by graphene (Gr) and monolayer transition metal dichalcogenides (TMD) promising building blocks for tunneling transistors and flexible electronics, as well as optoelectronic devices, including photodetectors, photovoltaics, and quantum light emitting devices (QLEDs), bright and narrow-line emitters using minimal amounts of active absorber material. The performance of such devices is critically ruled by interlayer interactions which are still poorly understood in many respects. Specifically, two classes of coupling mechanisms have been proposed, charge transfer (CT) and energy transfer (ET), but their relative efficiency and the underlying physics are open questions. Here, building on a time-resolved Raman scattering experiment, we determine the electronic temperature profile of Gr in response to TMD photoexcitation, tracking the picosecond dynamics of the G and 2D Raman bands. Compelling evidence for a dominant role of the ET process accomplished within a characteristic time of ∼4 ps is provided. Our results suggest the existence of an intermediate process between the observed picosecond ET and the generation of a net charge underlying the slower electric signals detected in optoelectronic applications.
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36
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Parhizkar S, Prechtl M, Giesecke AL, Suckow S, Wahl S, Lukas S, Hartwig O, Negm N, Quellmalz A, Gylfason K, Schall D, Wuttig M, Duesberg GS, Lemme MC. Two-Dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors. ACS PHOTONICS 2022; 9:859-867. [PMID: 35308407 PMCID: PMC8931762 DOI: 10.1021/acsphotonics.1c01517] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Indexed: 05/11/2023]
Abstract
Low-cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic-integrated circuits (PICs), especially for wavelengths above 1.8 μm. Multilayered platinum diselenide (PtSe2) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450 °C. We integrate PtSe2-based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 μs. Fourier-transform IR spectroscopy in the wavelength range from 1.25 to 28 μm indicates the suitability of PtSe2 for PDs far into the IR wavelength range. Our PtSe2 PDs integrated by direct growth outperform PtSe2 PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility makes PtSe2 an attractive 2D material for optoelectronics and PICs.
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Affiliation(s)
- Shayan Parhizkar
- Chair
of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Maximilian Prechtl
- Institute
of Physics, Faculty of Electrical Engineering and Information Technology
(EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, 85577 Neubiberg, Germany
| | - Anna Lena Giesecke
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Stephan Suckow
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Sophia Wahl
- Institute
of Physics IA, RWTH Aachen University, Otto-Blumenthal-Straße, 52074 Aachen, Germany
| | - Sebastian Lukas
- Chair
of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
| | - Oliver Hartwig
- Institute
of Physics, Faculty of Electrical Engineering and Information Technology
(EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, 85577 Neubiberg, Germany
| | - Nour Negm
- Chair
of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Arne Quellmalz
- Division
of Micro and Nanosystems, School of Electrical Engineering and Computer
Science, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
| | - Kristinn Gylfason
- Division
of Micro and Nanosystems, School of Electrical Engineering and Computer
Science, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
| | - Daniel Schall
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
- Black Semiconductor
GmbH, Schloss-Rahe-Straße
15, 52072 Aachen, Germany
| | - Matthias Wuttig
- Institute
of Physics IA, RWTH Aachen University, Otto-Blumenthal-Straße, 52074 Aachen, Germany
| | - Georg S. Duesberg
- Institute
of Physics, Faculty of Electrical Engineering and Information Technology
(EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, 85577 Neubiberg, Germany
| | - Max C. Lemme
- Chair
of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
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37
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Huang L, Krasnok A, Alú A, Yu Y, Neshev D, Miroshnichenko AE. Enhanced light-matter interaction in two-dimensional transition metal dichalcogenides. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2022; 85:046401. [PMID: 34939940 DOI: 10.1088/1361-6633/ac45f9] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2021] [Accepted: 12/16/2021] [Indexed: 05/27/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS2, WS2, MoSe2, and WSe2, have received extensive attention in the past decade due to their extraordinary electronic, optical and thermal properties. They evolve from indirect bandgap semiconductors to direct bandgap semiconductors while their layer number is reduced from a few layers to a monolayer limit. Consequently, there is strong photoluminescence in a monolayer (1L) TMDC due to the large quantum yield. Moreover, such monolayer semiconductors have two other exciting properties: large binding energy of excitons and valley polarization. These properties make them become ideal materials for various electronic, photonic and optoelectronic devices. However, their performance is limited by the relatively weak light-matter interactions due to their atomically thin form factor. Resonant nanophotonic structures provide a viable way to address this issue and enhance light-matter interactions in 2D TMDCs. Here, we provide an overview of this research area, showcasing relevant applications, including exotic light emission, absorption and scattering features. We start by overviewing the concept of excitons in 1L-TMDC and the fundamental theory of cavity-enhanced emission, followed by a discussion on the recent progress of enhanced light emission, strong coupling and valleytronics. The atomically thin nature of 1L-TMDC enables a broad range of ways to tune its electric and optical properties. Thus, we continue by reviewing advances in TMDC-based tunable photonic devices. Next, we survey the recent progress in enhanced light absorption over narrow and broad bandwidths using 1L or few-layer TMDCs, and their applications for photovoltaics and photodetectors. We also review recent efforts of engineering light scattering, e.g., inducing Fano resonances, wavefront engineering in 1L or few-layer TMDCs by either integrating resonant structures, such as plasmonic/Mie resonant metasurfaces, or directly patterning monolayer/few layers TMDCs. We then overview the intriguing physical properties of different van der Waals heterostructures, and their applications in optoelectronic and photonic devices. Finally, we draw our opinion on potential opportunities and challenges in this rapidly developing field of research.
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Affiliation(s)
- Lujun Huang
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT, 2600, Australia
| | - Alex Krasnok
- Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33174, United States of America
| | - Andrea Alú
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, NY 10031, United States of America
- Physics Program, Graduate Center, City University of New York, New York, NY 10016, United States of America
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - Dragomir Neshev
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Andrey E Miroshnichenko
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT, 2600, Australia
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38
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Jang H, Song Y, Seok Y, Im H, Kim TH, Lee JH, Kim YH, Lee K. Zero power infrared sensing in 2D/3D-assembled heterogeneous graphene/In/InSe/Au. NANOSCALE 2022; 14:3004-3012. [PMID: 35170602 DOI: 10.1039/d1nr07884d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Low- or self-powered infrared sensors can be used in a broad range of applications, including networking mobile edge devices and image recognition for autonomous driving technology. Here, we show state-of-the-art self-powered near-infrared (NIR) sensors using graphene/In/InSe/Au as a photoactive region. The self-powered NIR sensors show outstanding performance, achieving a photoresponsivity of ∼8.5 A W-1 and a detectivity of ∼1012 Jones at 850 nm light. Multiple self-powered InSe photodetectors with different device structures and contacts were systematically investigated. In particular, the asymmetrically assembled graphene/In/InSe/Au vertical heterostructure offers a high built-in field, which gives rise to efficient electron-hole pair separation and transit time that is shorter than the photocarrier lifetime. The built-in potential across the InSe was estimated using the Schottky barrier height at each metal contact with InSe, obtained using density functional theory calculations. We also demonstrate InSe vertical field-effect transistors and provide an out-of-plane carrier mobility of InSe. Using the out-of-plane mobility and structural parameters of each device, the built-in field, drift velocity, and corresponding transit time are estimated.
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Affiliation(s)
- Hanbyeol Jang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Yumin Song
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Yongwook Seok
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Heungsoon Im
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Tae Hyung Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Joo-Hyoung Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Yong-Hoon Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Kayoung Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
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39
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Yuan XB, Guo YH, Wang JL, Hu GC, Ren JF, Zhao XW. Type-II Band Alignment and Tunable Optical Absorption in MoSSe/InS van der Waals Heterostructure. Front Chem 2022; 10:861838. [PMID: 35273953 PMCID: PMC8902150 DOI: 10.3389/fchem.2022.861838] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/25/2022] [Accepted: 02/07/2022] [Indexed: 12/03/2022] Open
Abstract
In this work, we study the electronic structure, the effective mass, and the optical properties of the MoSSe/InS van der Waals heterostructures (vdWHs) by first-principles calculations. The results indicate that the MoSSe/InS vdWH is an indirect band gap semiconductor and has type-Ⅱ band alignment in which the electrons and holes located at the InS and the MoSSe side, respectively. The band edge position, the band gap and the optical absorption of the MoSSe/InS vdWH can be tuned when biaxial strains are applied. In addition, compared with MoSSe and InS monolayers, the optical absorption of the MoSSe/InS vdWH is improved both in the visible and the ultraviolet regions. These findings indicate that the MoSSe/InS vdWHs have potential applications in optoelectronic devices.
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Affiliation(s)
- X. B. Yuan
- School of Physics and Electronics, Shandong Normal University, Jinan, China
| | - Y. H. Guo
- School of Physics and Electronics, Shandong Normal University, Jinan, China
| | - J. L. Wang
- School of Physics and Electronics, Shandong Normal University, Jinan, China
| | - G. C. Hu
- School of Physics and Electronics, Shandong Normal University, Jinan, China
| | - J. F. Ren
- School of Physics and Electronics, Shandong Normal University, Jinan, China
- Shandong Provincial Engineering and Technical Center of Light Manipulations and Institute of Materials and Clean Energy, Shandong Normal University, Jinan, China
- *Correspondence: J. F. Ren, ; X. W. Zhao,
| | - X. W. Zhao
- School of Physics and Electronics, Shandong Normal University, Jinan, China
- *Correspondence: J. F. Ren, ; X. W. Zhao,
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40
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Low-Dimensional Layered Light-Sensitive Memristive Structures for Energy-Efficient Machine Vision. ELECTRONICS 2022. [DOI: 10.3390/electronics11040619] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Layered two-dimensional (2D) and quasi-zero-dimensional (0D) materials effectively absorb radiation in the wide ultraviolet, visible, infrared, and terahertz ranges. Photomemristive structures made of such low-dimensional materials are of great interest for creating optoelectronic platforms for energy-efficient storage and processing of data and optical signals in real time. Here, photosensor and memristor structures based on graphene, graphene oxide, bismuth oxyselenide, and transition metal dichalcogenides are reviewed from the point of view of application in broadband image recognition in artificial intelligence systems for autonomous unmanned vehicles, as well as the compatibility of the formation of layered neuromorphic structures with CMOS technology.
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41
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 82] [Impact Index Per Article: 41.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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42
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Lu J, Deng Z, Ye Q, Zheng Z, Yao J, Yang G. Promoting the Performance of 2D Material Photodetectors by Dielectric Engineering. SMALL METHODS 2022; 6:e2101046. [PMID: 34935297 DOI: 10.1002/smtd.202101046] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2021] [Revised: 11/24/2021] [Indexed: 06/14/2023]
Abstract
Low light absorption and limited carrier lifetime are two limiting factors hampering the further breakthrough of the performance of 2D materials (2DMs)-based photodetectors. This study proposes an ingenious dielectric engineering strategy toward boosting the photosensitivity. Periodic dielectric structures (PDSs), including SiO2 /h-BN, SiO2 /Al2 O3 , and SiO2 /SrTiO3 (STO), are exploited to couple with 2D photosensitive channels (denoted as PDS-2DMs). The responsivity, external quantum efficiency, and detectivity of an optimized SiO2 /STO(300 nm) -WSe2 photodetector reach 89081 A W-1 , 2.7 × 107 %, and 1.8 × 1013 Jones, respectively. These performance metrics are orders of magnitude higher than a pristine WSe2 photodetector, enabling reliable sub-1 pW weak light detection. Based on systematic characterizations and first-principle calculations, such dramatic performance improvement is associated with the promoted direct bandgap transition, reduced exciton binding energy, and PDS-induced periodic intramolecular built-in electric field across the atomically thin channels, which efficiently separates the photoexcited electron-hole pairs. More inspiringly, this strategy is also successfully exploited to 2D WS2 photodetectors, demonstrating broad applicability. As a whole, this work promises an exceptional avenue to ameliorate 2DM photodetectors and opens up a new horizon "dielectric optoelectronics," simultaneously highlighting the role of dielectric environment during analyzing the fundamentals of 2DM devices.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Zexiang Deng
- School of Physics, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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43
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Jeong MH, Ra HS, Lee SH, Kwak DH, Ahn J, Yun WS, Lee J, Chae WS, Hwang DK, Lee JS. Multilayer WSe 2 /MoS 2 Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108412. [PMID: 35019191 DOI: 10.1002/adma.202108412] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2021] [Revised: 12/19/2021] [Indexed: 06/14/2023]
Abstract
While 2D transition metal dichalcogenides (TMDs) are promising building blocks for various optoelectronic applications, limitations remain for multilayered TMD-based photodetectors: an indirect bandgap and a short carrier lifetime by strongly bound excitons. Accordingly, multilayered TMDs with a direct bandgap and an enhanced carrier lifetime are required for the development of various optoelectronic devices. Here, periodically arrayed nanopore structures (PANS) are proposed for improving the efficiency of multilayered p-WSe2 /n-MoS2 phototransistors. Density functional theory calculations as well as photoluminescence and time-resolved photoluminescence measurements are performed to characterize the photodetector figures of merit of multilayered p-WSe2 /n-MoS2 heterostructures with PANS. The characteristics of the heterojunction devices with PANS reveal an enhanced responsivity and detectivity measured under 405 nm laser excitation, which at 1.7 × 104 A W-1 and 1.7 × 1013 Jones are almost two orders of magnitude higher than those of pristine devices, 3.6 × 102 A W-1 and 3.6 × 1011 Jones, respectively. Such enhanced optical properties of WSe2 /MoS2 heterojunctions with PANS represent a significant step toward next-generation optoelectronic applications.
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Affiliation(s)
- Min-Hye Jeong
- Department of Energy Science & Engineering, Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Hyun-Soo Ra
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Sang-Hyeon Lee
- Department of Energy Science & Engineering, Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Do-Hyun Kwak
- Department of Energy Science & Engineering, Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Jongtae Ahn
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Won Seok Yun
- Convergence Research Institute, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - JaeDong Lee
- Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Weon-Sik Chae
- Korea Basic Science Institute (KBSI) Daegu Center, Daegu, 41566, Republic of Korea
| | - Do Kyung Hwang
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Jong-Soo Lee
- Department of Energy Science & Engineering, Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
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44
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Krause R, Aeschlimann S, Chávez-Cervantes M, Perea-Causin R, Brem S, Malic E, Forti S, Fabbri F, Coletti C, Gierz I. Microscopic Understanding of Ultrafast Charge Transfer in van der Waals Heterostructures. PHYSICAL REVIEW LETTERS 2021; 127:276401. [PMID: 35061410 DOI: 10.1103/physrevlett.127.276401] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2021] [Revised: 09/29/2021] [Accepted: 11/12/2021] [Indexed: 06/14/2023]
Abstract
Van der Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined with microscopic many-particle theory to reveal the relevant microscopic charge transfer channels in epitaxial WS_{2}/graphene heterostructures. We find that the timescale for efficient ultrafast charge separation in the material is determined by direct tunneling at those points in the Brillouin zone where WS_{2} and graphene bands cross, while the lifetime of the charge separated transient state is set by defect-assisted tunneling through localized sulphur vacancies. The subtle interplay of intrinsic and defect-related charge transfer channels revealed in the present work can be exploited for the design of highly efficient light harvesting and detecting devices.
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Affiliation(s)
- R Krause
- University of Regensburg, Institute for Experimental and Applied Physics, 93040 Regensburg, Germany
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - S Aeschlimann
- University of Regensburg, Institute for Experimental and Applied Physics, 93040 Regensburg, Germany
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - M Chávez-Cervantes
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - R Perea-Causin
- Chalmers University of Technology, Department of Physics, 41296 Gothenburg, Sweden
| | - S Brem
- Philipps-Universität Marburg, Department of Physics, 35032 Marburg, Germany
| | - E Malic
- Chalmers University of Technology, Department of Physics, 41296 Gothenburg, Sweden
- Philipps-Universität Marburg, Department of Physics, 35032 Marburg, Germany
| | - S Forti
- Center for Nanotechnology Innovation at NEST, Istituto Italiano di Tecnologia, 56127 Pisa, Italy
| | - F Fabbri
- Center for Nanotechnology Innovation at NEST, Istituto Italiano di Tecnologia, 56127 Pisa, Italy
- NEST, Istituto Nanoscienze, CNR and Scuola Normale Superiore, 56127 Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, 16163 Genova, Italy
| | - C Coletti
- Center for Nanotechnology Innovation at NEST, Istituto Italiano di Tecnologia, 56127 Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, 16163 Genova, Italy
| | - I Gierz
- University of Regensburg, Institute for Experimental and Applied Physics, 93040 Regensburg, Germany
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45
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Nguyen PV, Teutsch NC, Wilson NP, Kahn J, Xia X, Graham AJ, Kandyba V, Barinov A, Xu X, Cobden DH, Wilson NR. Field-Dependent Band Structure Measurements in Two-Dimensional Heterostructures. NANO LETTERS 2021; 21:10532-10537. [PMID: 34851122 DOI: 10.1021/acs.nanolett.1c04172] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In electronic and optoelectronic devices made from van der Waals heterostructures, electric fields can induce substantial band structure changes which are crucial to device operation but cannot usually be directly measured. Here, we use spatially resolved angle-resolved photoemission spectroscopy to monitor changes in band alignment of the component layers, corresponding to band structure changes of the composite heterostructure system, that are produced by electrostatic gating. Our devices comprise graphene on a monolayer semiconductor, WSe2 or MoSe2, atop a boron nitride dielectric and a graphite gate. Applying a gate voltage creates an electric field that shifts the semiconductor bands relative to those in the graphene by up to 0.2 eV. The results can be understood in simple terms by assuming that the materials do not hybridize.
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Affiliation(s)
- Paul V Nguyen
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Natalie C Teutsch
- Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Nathan P Wilson
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Joshua Kahn
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Xue Xia
- Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Abigail J Graham
- Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Viktor Kandyba
- Elettra - Sincrotrone Trieste, S.C.p.A., Basovizza (Trieste) 34149, Italy
| | - Alexei Barinov
- Elettra - Sincrotrone Trieste, S.C.p.A., Basovizza (Trieste) 34149, Italy
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
- Department of Material Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - David H Cobden
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Neil R Wilson
- Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
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46
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Lopriore E, Marin EG, Fiori G. An ultrafast photodetector driven by interlayer exciton dissociation in a van der Waals heterostructure. NANOSCALE HORIZONS 2021; 7:41-50. [PMID: 34877960 DOI: 10.1039/d1nh00396h] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Ultrafast photodetectors based on two-dimensional materials suffer from low responsivities and high dark currents. Interlayer exciton dissociation in type-II vertical heterojunctions of transition metal dichalcogenides is a viable mechanism for achieving higher responsivities with picosecond response times. Here, we propose a novel device concept based on these structures, with potential for self-powered photodetector applications characterized by an unprecedented trade-off between speed and responsivity with zero dark current. In order to assess the realistic performance to be expected in the proposed device, we have purposely devised a simulation approach able to provide a detailed investigation of the physics at play, while showing excellent predictive capabilities when compared with experiments on interlayer exciton transport available in the literature. The proposed high-performance photodetectors with tunable responsivities are at reach with available fabrication techniques and could help in paving the way towards monolithically integrated artificial neural networks for ultrafast machine vision in speed sensitive applications.
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Affiliation(s)
- Edoardo Lopriore
- Dipartimento di Ingegneria dell'Informazione, University of Pisa, Pisa, Italy
| | - Enrique G Marin
- Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Granada, Spain
| | - Gianluca Fiori
- Dipartimento di Ingegneria dell'Informazione, University of Pisa, Pisa, Italy
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47
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Jiang Y, He A, Zhao R, Chen Y, Liu G, Lu H, Zhang J, Zhang Q, Wang Z, Zhao C, Long M, Hu W, Wang L, Qi Y, Gao J, Wu Q, Ge X, Ning J, Wee ATS, Qiu CW. Coexistence of Photoelectric Conversion and Storage in van der Waals Heterojunctions. PHYSICAL REVIEW LETTERS 2021; 127:217401. [PMID: 34860083 DOI: 10.1103/physrevlett.127.217401] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2020] [Revised: 06/02/2021] [Accepted: 09/27/2021] [Indexed: 06/13/2023]
Abstract
Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, have great potential for the development of ecofriendly and high-efficiency nanodevices, which shows valuable applications as photovoltaic cells, photodetectors, etc. However, the coexistence of photoelectric conversion and storage in a single device has not been achieved until now. Here, we demonstrate a simple strategy to construct a vdW p-n junction between a WSe_{2} layer and quasi-2D electron gas. After an optical illumination, the device stores the light-generated carriers for up to seven days, and then releases a very large photocurrent of 2.9 mA with bias voltage applied in darkness; this is referred to as chargeable photoconductivity (CPC), which completely differs from any previously observed photoelectric phenomenon. In normal photoconductivity, the recombination of electron-hole pairs occurs at the end of their lifetime; in contrast, infinite-lifetime photocarriers can be generated and stored in CPC devices without recombination. The photoelectric conversion and storage are completely self-excited during the charging process. The ratio between currents in full- and empty-photocarrier states below the critical temperature reaches as high as 10^{9}, with an external quantum efficiency of 93.8% during optical charging. A theoretical model developed to explain the mechanism of this effect is in good agreement with the experimental data. This work paves a path toward the high-efficiency devices for photoelectric conversion and storage.
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Affiliation(s)
- Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Anpeng He
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Run Zhao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Yu Chen
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Guozhen Liu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Hao Lu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Jinlei Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Qing Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Zhuo Wang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Chen Zhao
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Mingshen Long
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Lin Wang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Yaping Qi
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, USA
| | - Ju Gao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
- School for Optoelectronic Engineering, Zaozhuang University, Shandong 277160, China
| | - Quanying Wu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Xiaotian Ge
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-tech and Nano-Bionics (SINANO), Suzhou, Jiangsu 215123, People's Republic of China
| | - Jiqiang Ning
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-tech and Nano-Bionics (SINANO), Suzhou, Jiangsu 215123, People's Republic of China
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, Singapore 117551, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
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48
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Ren D, Li Y, Xiong W. Vertically stacked GaN/WX 2 (X = S, Se, Te) heterostructures for photocatalysts and photoelectronic devices. RSC Adv 2021; 11:35954-35959. [PMID: 35492743 PMCID: PMC9043231 DOI: 10.1039/d1ra07308g] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2021] [Accepted: 11/01/2021] [Indexed: 01/23/2023] Open
Abstract
Tremendous attention has been paid to vertically stacked heterostructures owing to their tunable electronic structures and outstanding optical properties. In this work, we explore the structural, electronic and optical properties of vertically stacked GaN/WX2 (X = S, Se, Te) heterostructures using density functional theory. We find that these stacking heterostructures are all semiconductors with direct band gaps of 1.473 eV (GaN/WTe2), 2.102 eV (GaN/WSe2) and 1.993 eV (GaN/WS2). Interestingly, the GaN/WS2 heterostructure exhibits a type-II band alignment, while the other two stackings of GaN/WSe2 and GaN/WTe2 heterostructures have type-I band alignment. The optical absorption of GaN/WX2 heterostructures is very efficient in the visible light spectrum. Our results suggest that GaN/WX2 heterostructures are promising candidates for photocatalytic water splitting and photoelectronic devices in visible light.
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Affiliation(s)
- Dahua Ren
- School of Information Engineering, Hubei Minzu University Enshi 44500 China .,Science of Physics and Technology, Wuhan University Wuhan 430072 China
| | - Yunhai Li
- Science of Physics and Technology, Wuhan University Wuhan 430072 China
| | - Wenqi Xiong
- Science of Physics and Technology, Wuhan University Wuhan 430072 China
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49
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Picosecond electrical response in graphene/MoTe2 heterojunction with high responsivity in the near infrared region. FUNDAMENTAL RESEARCH 2021. [DOI: 10.1016/j.fmre.2021.09.018] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022] Open
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50
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Dandu M, Gupta G, Majumdar K. Negative Differential Photoconductance as a Signature of Nonradiative Energy Transfer in van der Waals Heterojunction. ACS NANO 2021; 15:16432-16441. [PMID: 34644047 DOI: 10.1021/acsnano.1c05844] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The physical proximity of layered materials in their van der Waals heterostructures (vdWhs) aids interfacial phenomena such as charge transfer (CT) and energy transfer (ET). Besides providing fundamental insights, CT and ET also offer routes to engineer optoelectronic properties of vdWhs. For example, harnessing ET in vdWhs can help to overcome the limitations of optical absorption imposed by the ultra-thin nature of layered materials and thus provide an opportunity for in situ enhancement of quantum efficiency for light-harvesting and sensing applications. While several spectroscopic studies on vdWhs probed the dynamics of CT and ET, the possible contribution of ET in the photocurrent generation remains largely unexplored. In this work, we investigate the role of nonradiative energy transfer (NRET) in the photocurrent through a vertical vdWh of SnSe2/MoS2/TaSe2. We observe an unusual negative differential photoconductance (NDPC) arising from the existence of NRET across the SnSe2/MoS2 junction. Modulation of the NRET-driven NDPC characteristics with optical power results in a striking transition of the photocurrent's power law from a sublinear to a superlinear regime. Our observations reveal the nontrivial influence of ET on the photoresponse of vdWhs, which offer insights to harness ET in synergy with CT for vdWh based next-generation optoelectronics.
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Affiliation(s)
- Medha Dandu
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Garima Gupta
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
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