Van der Waals epitaxial growth of air-stable CrSe2 nanosheets with thickness-tunable magnetic order

Spin-valley coupling enhanced high-TC ferromagnetism in a non-van der Waals monolayer Cr2Se3 on graphene

Spin-valley magnetic ordering is restricted to layered van der Waals type transition-metal dichalcogenides with ordering temperatures below 55 K. Recent theoretical studies on non-van der Waals structures have predicted spin-valley polarization induced semiconducting ferromagnetic ground states, but experimental validation is missing. We report high-Curie temperature (TC ~ 225 K) metallic ferromagnetism with spontaneous spin-valley polarization in monolayer Cr2Se3 on graphene. Angle-resolved photoemission spectroscopy (ARPES) reveals systematic temperature-dependent energy shifts and splitting of localized Cr 3 d↑-t2g bands, accompanied by occupancy of the itinerant Cr 3d-eg valleys. The t2g-eg spin-valley coupling at the K/K' points of hexagonal Brillouin zone leads to ferromagnetic ordering. Circular dichroism in ARPES shows clear evidence of spin-valley polarized states. Comparison with bilayer and trilayer Cr2Se3 reveals the crucial role of valley carrier density in enhancing TC and provides a guiding principle to realize 2D ferromagnetism at higher temperatures in non-van der Waals materials.

Regulation of transition temperature and magnetic anisotropy in 2D multiferroic monolayer through electron donating and withdrawing groups adsorption

The discovery of two-dimensional (2D) magnetic materials ushers in the engineering of future magnetoelectric nanodevices and spintronics, however, it is limited by the lack of a material platform with simultaneously large magnetic anisotropy and high transition temperature. Using a recently synthesized CrSe2monolayer as a demonstration, the impact on magnetism and electronics is studied via first-principles calculations by functionalizing the monolayer with electron-donating and electron-withdrawing groups namely NH2and NO2. The magnetic ground state of the CrSe2changes from the stripe antiferromagnetic to the ferromagnetic state after functionalization. The transition temperature of CrSe2-NO2and CrSe2-NH2enhances to 105 and 70 K, respectively, due to the expansion of the CrSe2superlattice. Besides, the magnetic anisotropy energy (MAE) of the CrSe2-NO2increases to 1.12 meV/Cr along the in-plane direction due to the electron-withdrawing effect of the NO2group. Oppositely, the electron-donating effect will decrease the MAE. Moreover, robust out-of-plane electric polarization is induced into the functionalized CrSe2monolayer, relying on the semiconducting nature and asymmetric geometry along thezdirection. These findings demonstrate the critical role of functional groups in regulating the magnetic and electronic properties of 2D multiferroic structures, providing a general approach for controllable 2D spintronic applications.

Structural diversity dependent cation incorporation into magnetic Cr-Se nanocrystals

Chromium selenide (Cr-Se)-based low-dimensional materials have attracted significant attention in spintronics because of their diverse structure- and composition-dependent magnetic properties. While significant progress has been made in fabricating the Cr-Se family of nanomaterials through techniques like chemical vapor deposition, the synthesis of Cr-Se nanocrystals (NCs) via colloidal methods remains underexplored. In this work, we demonstrate the robust colloidal synthesis approach for producing Cr2Se3 and Cr3Se4 NCs with distinct morphologies by varying the Cr precursors and ligands. Cr-Se NCs can serve as templates for cation exchange (CE) reactions involving monovalent Cu+ and Ag+, divalent Zn2+ and Cd2+, and trivalent In3+, facilitating the creation of a diverse library of metal selenide NCs and nanoheterostructures. Our findings highlight how the outcomes of CE reactions are influenced by the structure of various Cr-Se phases. Furthermore, the magnetic properties of the as-synthesized Cr-Se NCs and their derivative CuCrSe2 were investigated. Our work provides a robust synthesis route for the Cr-Se class of magnetic nanomaterials and a platform for creating a diverse range of functional metal selenide NCs via CE reactions.

Two-Dimensional Cr3Te4/WS2/Fe3GeTe2/WTe2 Magnetic Memory with Field-Free Switching and Low Power Consumption

Spin-orbit torque (SOT) magnetic memory technology has garnered significant attention due to its ability to enable field-free switching of magnets with strong perpendicular magnetic anisotropy (PMA). However, concerns regarding power consumption of SOT-memory are persisting. Here, this work proposes a method to construct magnetic tunnel junction (MTJ) by transferring chemically vapor-deposited two-dimensional (2D) Cr3Te4/WS2 van der Waals (vdW) heterostructures onto 2D Fe3GeTe2 (FGT) magnet. The robustness and tunability of 2D magnets allow MTJs to exhibit non-volatility, multiple output states, and impressive cycling durability. MTJs with thin WS2 barriers (fewer than six layers) exhibit a linear tunneling effect, achieving a low resistance-area product (RA) of 15.5 kΩ·µm2 using bilayer WS2, which facilitats low-power operation. Furthermore, the different 2D magnets display a significant anti-parallel window of up to 8 kOe. SOT-memory based on the typical MTJ demonstrates a low write consumption of 0.3 mJ and read consumption of 9.7 nJ, marking a significant advancement in 2D vdW SOT-memory. This research has pointed out a new direction for constructing low power consumption SOT-memory with PMA field-free switching.

Spintronic Devices upon 2D Magnetic Materials and Heterojunctions

In spintronics, there has been increasing interest in two-dimensional (2D) magnetic materials. The well-defined layered crystalline structure, interface conditions, and van der Waals stacking of these materials offer advantages for the development of high-performance spintronic devices. Spin-orbit torque (SOT) devices and the tunneling magnetoresistance (TMR) effect based on these materials have emerged as prominent research areas. SOT devices utilizing 2D magnetic materials can efficiently achieve SOT-driven magnetization switching by modulating the interaction between spin and orbital degrees of freedom. Notably, crystal structure symmetry breaking in 2D magnetic heterojunctions leads to field-free perpendicular magnetization switching and an extremely low SOT-driven magnetization switching current density of down to 106 A/cm2. This review provides a comprehensive overview of the construction, measurement, and mechanisms of 2D SOT heterojunctions. The TMR effect observed in 2D materials also exhibits significant potential for various applications. Specifically, the spin-filter effect in layered A-type antiferromagnets has led to giant TMR ratios approaching 19,000%. Here, we review the physical mechanisms underlying the TMR effect, along with the design of high-performance devices such as magnetic tunnel junctions (MTJ) and spin valves. This review summarizes different structural types of 2D heterojunctions and key factors that enhance TMR values. These advanced devices show promising prospects in fields such as magnetic storage. We highlight significant advancements in the integration of 2D materials in SOT, MTJ, and spin valve devices, which offer advantages such as high-density storage capability, low-power computing, and fast data transmission rates for Magnetic Random Access Memory and logic integrated circuits. These advancements are expected to revolutionize future developments in information technology.

Si-CMOS Compatible Synthesis of Wafer-Scale 1T-CrTe2 with Step-Like Magnetic Transition

2D room-temperature ferromagnet CrTe2 is a promising candidate material for spintronic applications. However, its large-scale and cost-effective synthesis remains a challenge. Here, the fine controllable synthesis of wafer-scale 1T-CrTe2 films is reported on a SiO2/Si substrate using plasma-enhanced chemical vapor deposition at temperatures below 400 °C. Magnetic hysteresis measurements reveal that the synthesized 1T-CrTe2 films exhibit perpendicular magnetic anisotropy along with distinct step-like magnetic transitions. It is found that 1T-CrTe2 is susceptible to oxygen adsorption even in ambient conditions. The theoretical calculations indicate that the oxidation of surface layers is crucial for the absence of out-of-plane easy axis in few-layer CrTe2, while the interlayer antiferromagnetic coupling among the upper surface layers leads to the observed step-like magnetic transitions. The study provides a Si-CMOS compatible approach for the fabrication of magnetic 2D materials and highlights how unintentional adsorbents or dopants can significantly influence the magnetic behaviors of these materials.

Controllable Syntheses, Structure Identifications, and Property Explorations of Self-Intercalated 2D Transition Metal Chalcogenides

2D transition metal dichalcogenides (2D TMDCs) have attracted intensive interest in physics and materials science-related fields, due to their exotic properties (e.g., superconductivity, charge density wave (CDW) phase transition, magnetism, electrocatalytic property). Intercalation of native metal atoms in the layered 2D TMDCs (e.g., from VS2 to V5S8 by V intercalation) can afford new stoichiometric ratios, phase states, and thus rich properties. This review hereby summarizes the recent progress in the controllable syntheses, structure characterizations, and property explorations of self-intercalated 2D transition metal chalcogenides (TMCs), with the metal elements focusing on group-V, VI, and VIII metals. The self-intercalation-related synthetic strategies will be introduced via chemical vapor deposition (CVD) and molecule beam epitaxy (MBE), especially by tuning the chemical potentials of intercalated metal elements, growth promoters, substrates, etc. Additionally, the structure/phase identifications of the self-intercalated 2D TMCs through various characterization techniques will be overviewed. More significantly, the intriguing properties in such 2D TMCs will be thoroughly discussed, such as the thickness- or composition-dependent magnetism, CDW phase transition, electrocatalytic property, etc. Finally, challenges and prospects are proposed for developing new self-intercalated 2D materials and their heterostructures and exploring their unique properties and applications.

Emergent Skyrmions in Cr0.85Te nanoflakes at Room Temperature

Chiral noncollinear magnetic nanostructures, such as skyrmions, are intriguing spin configurations with significant potential for magnetic memory technologies. However, the limited availability of 2D magnetic materials that host skyrmions with Curie temperatures above room temperature presents a major challenge for practical implementation. Chromium tellurides exhibit diverse spin configurations and remarkable stability under ambient conditions, making them a promising platform for fundamental spin physics research and the development of innovative 2D spintronic devices. Here, domain structures of Cr0.85Te nanoflakes synthesized via chemical vapor deposition are investigated, using magnetic force microscopy at room temperature. The results reveal that the domain width of the as-grown nanoflakes scales with the square root of their thicknesses. Notably, the emergence and annihilation of skyrmions are observed, which can be reversibly controlled by external magnetic fields and thermal excitation in ambient air. Micromagnetic simulations suggest that the emergence of skyrmions in Cr0.85Te nanoflakes arises from inversion symmetry breaking due to compositional gradients across the sample thickness, rather than the interfacial Dzyaloshinskii-Moriya interaction. These findings provide new insights into the mechanisms underlying skyrmion formation in 2D ferromagnets and open exciting possibilities for manipulating domain structures at room temperature, offering practical pathways for developing next-generation spintronic devices.

Ultrahigh Exchange Bias Field/Coercive Field Ratio in In Situ Formed Two-Dimensional Magnetic Te-Cr2O3/Cr5Te6 Heterostructures

The exchange bias (EB) effect is a fundamental magnetic phenomenon, in which the exchange bias field/coercive field ratio (|HEB/HC|) can improve the stability of spintronic devices. Two-dimensional (2D) magnetic heterostructures have the potential to construct low-power and high-density spintronic devices, while their typically air unstable and |HEB/HC| lesser, limiting the possibility of applications. Here, 2D Cr5Te6 nanosheets have been systematically synthesized with an in situ formed ≈2 nm-thick Te doped Cr2O3 layer (Te-Cr2O3) on the upper surface by chemical vapor deposition (CVD) method. The strong and air stable EB effect, achieving a |HEB/HC| of up to 80% under an ultralow cooling field of 0.01 T, which is greater than that of the reported 2D magnetic heterostructures. Meanwhile, the uniformity of thickness and chemical composition of the Te-Cr2O3 layer can be controlled by the growth conditions which are highly correlated with the EB effect of 2D Te-Cr2O3/Cr5Te6 heterostructures. First-principles calculations show that the Te-Cr2O3 can provide uncompensated spins in the Cr2O3, thus forming strong spin pinning effect. The systematical investigation of the EB effect in 2D Te-Cr2O3/Cr5Te6 heterostructures with high |HEB/HC| will open up exciting opportunities in low-power and high-stability 2D spintronic devices.

Half-Metallic Antiferromagnetic 2D Nonlayered Cr2Se3 Nanosheets

Half-metallic magnetism, characterized by metallic behavior in one spin direction and semiconducting or insulating behavior in the opposite spin direction, is an intriguing and highly useful physical property for advanced spintronics because it allows for the complete realization of 100% spin-polarized current. Particularly, half-metallic antiferromagnetism is recognized as an excellent candidate for the development of highly efficient spintronic devices due to its zero net magnetic moment combined with 100% spin polarization, which results in lower energy losses and eliminates stray magnetic fields compared to half-metallic ferromagnets. However, the synthesis and characterization of half-metallic antiferromagnets have not been reported until now as the theoretically proposed materials require a delicate and challenging approach to fabricate such complex compounds. Here, we propose Cr2Se3 as the experimentally synthesizable half-metallic antiferromagnet. Our experimental and theoretical studies─including magnetic property measurements, spin-resolved density functional theory calculations, and tunneling magnetoresistance experiments─confirm its half-metallic antiferromagnetic behavior. We demonstrate that the 2D nonlayered Cr2Se3 synthesized via chemical vapor deposition offers an ideal platform for innovative spintronics applications and fundamental research into half-metallic antiferromagnets.

Recent Advances in Two-Dimensional Ferromagnetic Materials-Based van der Waals Heterostructures

Two-dimensional (2D) ferromagnetic materials are subjects of intense research owing to their intriguing physicochemical properties, which hold great potential for fundamental research and spintronic applications. Specifically, 2D van der Waals (vdW) ferromagnetic materials retain both structural integrity and chemical stability even at the monolayer level. Moreover, due to their atomic thickness, these materials can be easily manipulated by stacking them with other 2D vdW ferroic and nonferroic materials, enabling precise control over their physical properties and expanding their functional applications. Consequently, 2D vdW ferromagnetic materials-based heterostructures offer a platform to tailor magnetic properties and explore advanced spintronic devices. This review aims to provide an overview of recent developments in emerging 2D vdW ferromagnetic materials-based heterostructures and devices. The fabrication approaches for 2D ferromagnetic vdW heterostructures are primarily summarized, followed by a review of two categories of heterostructures: ferromagnetic/ferroic and ferromagnetic/nonferroic vdW heterostructures. Subsequently, the progress made in modulating magnetic properties and emergence of various phenomena in these heterostructures is highlighted. Furthermore, the applications of such heterostructures in spintronic devices are discussed along with their future perspectives and potential directions in this exciting field.

Vacancies Engineering in Molybdenum Boride MBene Nanosheets to Activate Room-Temperature Ferromagnetism

The rapid development of low energy dissipation spintronic devices has stimulated the search for air-stable 2D nanomaterials possessing room-temperature ferromagnetism. Here the experimental realization of 2D Mo4/3B2 nanosheets is reported with intrinsic room-temperature ferromagnetic characteristics by vacancy engineering. These nanosheets are synthesized by etching the bulk MAB phase (Mo2/3Y1/3)2AlB2 into Mo4/3B2 nanosheets in ZnCl2 molten salt. The Mo4/3B2 nanosheets show robust intrinsic ferromagnetic properties, with a saturation magnetic moment of 0.044 emu g-1 at 300 K, while vacancy-free MoB MBene exhibits paramagnetism. It is elucidated that the Mo-vacancy defect generates large density of states near the Fermi surface and spontaneously spin-split bands through first-principles calculations, which contributes to the non-zero magnetic moment in Mo4/3B2 nanosheets. This work lays the groundwork for activating the magnetic properties of MBene nanosheets by vacancy engineering, offering the possibilities for development of practical spintronic devices.

Unusual Anomalous Hall Effect in Two-Dimensional Ferromagnetic Cr7Te8

Two-dimensional (2D) materials with inherent magnetism have attracted considerable attention in the fields of spintronics and condensed matter physics. The anomalous Hall effect (AHE) offers a theoretical foundation for understanding the origins of 2D ferromagnetism (2D-FM) and offers a valuable opportunity for applications in topological electronics. Here, we present uniform and large-size 2D Cr7Te8 nanosheets with varying thicknesses grown using the chemical vapor deposition (CVD) method. The 2D Cr7Te8 nanosheets with robust perpendicular magnetic anisotropy, even a few layers deep, exhibit a Curie temperature (TC) ranging from 180 to 270 K according to the varying thickness of Cr7Te8. Moreover, we observed a temperature-induced reversal in the sign of the anomalous Hall resistance, correlating with changes in the intrinsic Berry curvature. Additionally, the topological Hall effect (THE) observed at low temperatures suggests the presence of non-trivial spin chirality. Our findings about topologically non-trivial magnetic spin states in 2D ferromagnets provide a promising opportunity for new designs in magnetic memory spintronics.

Observation of kagome-like bands in two-dimensional semiconducting Cr8Se12

The kagome lattice is a versatile platform for investigating correlated electronic states. However, its realization in two-dimensional (2D) semiconductors for tunable device applications is still challenging. An alternative strategy to create kagome-like bands is to realize a coloring-triangle (CT) lattice in semiconductors through a distortion of a modified triangular lattice. Here, we report the observation of low-energy kagome-like bands in a semiconducting 2D transition metal chalcogenide-Cr8Se12 with a thickness of 7 atomic layers-which exhibits a CT lattice and a bandgap of 0.8 eV. The Cr-deficient layer beneath the topmost Se-full layer is partially occupied with 2/3 occupancy, yielding a √3 × √3 Cr honeycomb network. Angle-resolved photoemission spectroscopy measurements and first-principles investigations reveal the surface kagome-like bands near the valence band maximum, which are attributed to topmost Se pz orbitals modulated by the honeycomb Cr.

Towards the scalable synthesis of two-dimensional heterostructures and superlattices beyond exfoliation and restacking

Two-dimensional transition metal dichalcogenides, which feature atomically thin geometry and dangling-bond-free surfaces, have attracted intense interest for diverse technology applications, including ultra-miniaturized transistors towards the subnanometre scale. A straightforward exfoliation-and-restacking approach has been widely used for nearly arbitrary assembly of diverse two-dimensional (2D) heterostructures, superlattices and moiré superlattices, providing a versatile materials platform for fundamental investigations of exotic physical phenomena and proof-of-concept device demonstrations. While this approach has contributed importantly to the recent flourishing of 2D materials research, it is clearly unsuitable for practical technologies. Capturing the full potential of 2D transition metal dichalcogenides requires robust and scalable synthesis of these atomically thin materials and their heterostructures with designable spatial modulation of chemical compositions and electronic structures. The extreme aspect ratio, lack of intrinsic substrate and highly delicate nature of the atomically thin crystals present fundamental difficulties in material synthesis. Here we summarize the key challenges, highlight current advances and outline opportunities in the scalable synthesis of transition metal dichalcogenide-based heterostructures, superlattices and moiré superlattices.

Epitaxial Growth of 2D Binary Phosphides

Combinations of phosphorus with main group III, IV, and V elements are theoretically predicted to generate 2D binary phosphides with extraordinary properties and promising applications. However, experimental synthesis is significantly lacking. Here, a general approach for preparing 2D binary phosphides is reported using single crystalline surfaces containing the constituent element of target 2D materials as the substrate. To validate this, SnP3 and BiP, representing typical 2D binary phosphides, are successfully synthesized on Cu2Sn and bismuthene, respectively. Scanning tunneling microscopy imaging reveals a hexagonal pattern of SnP3 on Cu2Sn, while α-BiP can be epitaxially grown on the α-bismuthene domain on Cu2Sb. First-principles calculations reveal that the formation of SnP3 on Cu2Sn is associated with strong interface bonding and significant charge transfer, while α-BiP interacts weakly with α-bismuthene so that its semiconducting property is preserved. The study demonstrates an attractive avenue for the atomic-scale growth of binary 2D materials via substrate phase engineering.

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures

Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.

Revealing Enhanced Optical Nonlinearity and Robust Ferromagnetism in Atomically Sharp Stacking Binary-Ternary Magnetic Heterostructures

Two-dimensional (2D) materials provide a versatile platform for the integration of diverse crystals, enabling the formation of heterostructures with intriguing functionalities. Coherently growing 2D heterostructures are highly desirable for property manipulation due to their strong interfacial interaction. In this work, we propose a general synthesis approach and provide insight into well-designed 2D binary-ternary magnetic heterostructures. Atomically sharp interfaces were achieved in typical lateral and vertical Cr1+mSe2(001)/CuCr2Se4(111) heterostructures owing to their similar lattice arrangement, with the observation of a significant enhancement of optical second-harmonic generation. Further magnetism measurements revealed a Curie temperature up to 360 K and thickness- and temperature-dependent magnetism in this heterostructure. Additionally, we synthesized three analogous 2D magnetic heterostructures in Fe-Cr-S, Co-Cr-S, and Cu-Cr-S systems, demonstrating the ubiquitous nature of the coherent heteroepitaxy. Our work involves the development of an innovative platform for investigating the underlying physics and potential applications of 2D binary-ternary heterostructures as well as the fabrication of associated functional devices.

Controlled Synthesis of 2D Ferromagnetic/Antiferromagnetic Cr7Te8/MnTe Vertical Heterostructures for High-Tunable Coercivity

Two-dimensional ferromagnetic/antiferromagnetic (2D-FM/AFM) heterostructures are of great significance to realize the application of spintronic devices such as miniaturization, low power consumption, and high-density information storage. However, traditional mechanical stacking can easily damage the crystal quality or cause chemical contamination residues for 2D materials, which can result in weak interface coupling and difficulty in device regulation. Chemical vapor deposition (CVD) is an effective way to achieve a high-quality heterostructure interface. Herein, high-quality interface 2D-FM/AFM Cr7Te8/MnTe vertical heterostructures were successfully synthesized via a one-pot CVD method. Moreover, the atomic-scale structural scanning transmission electron microscope (STEM) characterization shows that the interface of the vertical heterostructure is clear and flat without an excess interface layer. Compared to the parent Cr7Te8, the coercivity (HC) of the high-quality interface Cr7Te8/MnTe heterostructure is significantly reduced as the thickness of MnTe increases, with a maximum decrease of 74.5% when the thickness of the MnTe nanosheet is around 30 nm. Additionally, the HC of the Cr7Te8/MnTe heterostructure can also be regulated by applying a gate voltage, and the HC increases or decreases with increasing positive or negative gate voltages. Thus, the effective regulation of HC is essential to improving the performance of advanced spintronic devices (e.g., MRAM and magnetic sensors). Our work will provide ideas for spin controlling and device application of 2D-FM/AFM heterostructures.

CoX2Y4: a family of two-dimensional magnets with versatile magnetic order

Two-dimensional (2D) magnetic materials offer a promising platform for nanoscale spintronics and for exploration of novel physical phenomena. Here, we predict a diverse range of magnetic orders in cobalt-based 2D single septuple layers CoX2Y4, namely, CoBi2Te4, CoBi2Se2Te2, CoBi2Se4, and CoSb2Te4. Notably, CoBi2Te4 presents intrinsic non-collinear antiferromagnetism (AFM), while the others display collinear AFM. The emergence of AFM in all CoX2Y4 materials is attributed to the antiferromagnetic 90° Co-Te(Se)-Co superexchange coupling. The origin of non-collinear/collinear orders lies in competing Heisenberg exchange interactions within the Co triangular lattice. A pivotal factor governing the non-collinear order of CoBi2Te4 is the vanishingly small ratio of exchange coupling between next-nearest neighbour Co and the nearest neighbour Co (J2/J1 ∼ 0.01). Furthermore, our investigation into strain effects on CoX2Y4 lattices demonstrates the tunability of the magnetic state of CoSb2Te4 from collinear to non-collinear. Our prediction of the unique non-collinear AFM in 2D suggests the potential for observing extraordinary magnetic phenomena in 2D, including non-collinear scattering and magnetic domain walls.

Layer-Dependent Quantum Anomalous Hall and Quantum Spin Hall Effects in Two-Dimensional LiFeTe

The emergence of an intrinsic quantum anomalous Hall (QAH) insulator with long-range magnetic order triggers unprecedented prosperity for combining topology and magnetism in low dimensions. Here, based on stacked two-dimensional LiFeTe, we confirm that magnetic coupling and topological electronic states can be simultaneously manipulated by just changing the layer numbers. Monolayer LiFeTe shows intralayer ferrimagnetic coupling, behaving as a QAH insulator with Chern number C = 2. Beyond the monolayer, the odd and even layers of LiFeTe correspond to uncompensated and compensated interlayer antiferromagnets, resulting in unexpected QAH and quantum spin Hall (QSH) states, respectively. Moreover, the spin Chern number is proportional to the stacking layer numbers in even-layer LiFeTe, proving that the spin Hall conductivity can be continuously enhanced by increasing layer numbers. Therefore, the odd-even-layer-dependent QAH and QSH effects found in LiFeTe topological insulators offer new insight into regulating quantum states in two-dimensional topological materials.

Air-Stable Wafer-Scale Ferromagnetic Metallo-Carbon Nitride Monolayer

The pursuit of robust, long-range magnetic ordering in two-dimensional (2D) materials holds immense promise for driving technological advances. However, achieving this goal remains a grand challenge due to enhanced quantum and thermal fluctuations as well as chemical instability in the 2D limit. While magnetic ordering has been realized in atomically thin flakes of transition metal chalcogenides and metal halides, these materials often suffer from air instability. In contrast, 2D carbon-based materials are stable enough, yet the challenge lies in creating a high density of local magnetic moments and controlling their long-range magnetic ordering. Here, we report a novel wafer-scale synthesis of an air-stable metallo-carbon nitride monolayer (MCN, denoted as MN4/CNx), featuring ultradense single magnetic atoms and exhibiting robust room-temperature ferromagnetism. Under low-pressure chemical vapor deposition conditions, thermal dehydrogenation and polymerization of metal phthalocyanine (MPc) on copper foil at elevated temperature generate a substantial number of nitrogen coordination sites for anchoring magnetic single atoms in monolayer MN4/CNx (where M = Fe, Co, and Ni). The incorporation of densely populating MN4 sites into monolayer MCN networks leads to robust ferromagnetism up to room temperature, enabling the observation of anomalous Hall effects with excellent chemical stability. Detailed electronic structure calculations indicate that the presence of high-density metal sites results in the emergence of spin-split d-bands near the Fermi level, causing a favorable long-range ferromagnetic exchange coupling through direct exchange interactions. Our work demonstrates a novel synthesis approach for wafer-scale MCN monolayers with robust room-temperature ferromagnetism and may shed light on practical electronic and spintronic applications.

Monomolecular Membrane-Assisted Growth of Antimony Halide Perovskite/MoS2 Van der Waals Epitaxial Heterojunctions with Long-Lived Interlayer Exciton

Epitaxial growth stands as a key method for integrating semiconductors into heterostructures, offering a potent avenue to explore the electronic and optoelectronic characteristics of cutting-edge materials, such as transition metal dichalcogenide (TMD) and perovskites. Nevertheless, the layer-by-layer growth atop TMD materials confronts a substantial energy barrier, impeding the adsorption and nucleation of perovskite atoms on the 2D surface. Here, we epitaxially grown an inorganic lead-free perovskite on TMD and formed van der Waals (vdW) heterojunctions. Our work employs a monomolecular membrane-assisted growth strategy that reduces the contact angle and simultaneously diminishing the energy barrier for Cs3Sb2Br9 surface nucleation. By controlling the nucleation temperature, we achieved a reduction in the thickness of the Cs3Sb2Br9 epitaxial layer from 30 to approximately 4 nm. In the realm of inorganic lead-free perovskite and TMD heterojunctions, we observed long-lived interlayer exciton of 9.9 ns, approximately 36 times longer than the intralayer exciton lifetime, which benefited from the excellent interlayer coupling brought by direct epitaxial growth. Our research introduces a monomolecular membrane-assisted growth strategy that expands the diversity of materials attainable through vdW epitaxial growth, potentially contributing to future applications in optoelectronics involving heterojunctions.

Optimizing Electron Spin-Polarized States of MoSe2/Cr2Se3 Heterojunction-Embedded Carbon Nanospheres for Superior Sodium/Potassium-Ion Battery Performances

The principal challenges faced by sodium-ion batteries (SIBs) and potassium-ion batteries (KIBs) revolve around identifying suitable host materials capable of accommodating metal ions with larger dimensions and addressing the issue of sluggish chemical kinetics. Herein, a MoSe2/Cr2Se3 heterojunction uniformly embedded is fabricated in nitrogen-doped hollow carbon nanospheres (MoSe2/Cr2Se3@N-HCSs) as an electrode material for SIBs and KIBs. Cr2Se3 exhibits spontaneous antiparallel alignment of magnetic moments. Mo2+ doping is employed to regulate the electron spin states of Cr2Se3. Moreover, the MoSe2 and Cr2Se3 heterojunctions induce a lattice mismatch at the heterostructure interface, resulting in spin-polarized states or localized magnetic moments at the interface, potentially contributing to spin-polarized surface capacitance. MoSe2/Cr2Se3@N-HCSs demonstrate a high capacity of 498 mAh g-1 at 0.1 A g-1 with good cycling stability (capacity of 405 mAh g-1 and a coulombic efficiency of 99.8% after 1000 cycles). Additionally, density functional theory (DFT) calculations simulate the accumulation of spin-polarized charges at the MoSe2/Cr2Se3@N-HCSs heterojunction interface, dependent on the surface electron density of the antiferromagnetic Cr2Se3 and the surface spin polarization near the Fermi level. After regulating the electron spin states through Mo-doping, the band gap of the material decreases. These significant findings provide novel insights into the design and synthesis of electrode materials with exceptional performance characteristics for batteries.

Low Temperature Synthesis of 2D p-Type α-In2Te3 with Fast and Broadband Photodetection

2DA 2 III B 3 VI ${\mathrm{A}}_2^{{\mathrm{III}}}{\mathrm{B}}_3^{{\mathrm{VI}}}$ compounds (A = Al, Ga, In, and B = S, Se, and Te) with intrinsic structural defects offer significant opportunities for high-performance and functional devices. However, obtaining 2D atomic-thin nanoplates with non-layered structure on SiO2/Si substrate at low temperatures is rare, which hinders the study of their properties and applications at atomic-thin thickness limits. In this study, the synthesis of ultrathin, non-layered α-In2Te3 nanoplates is demonstrated using a BiOCl-assisted chemical vapor deposition method at a temperature below 350 °C on SiO2/Si substrate. Comprehensive characterization results confirm the high-quality single crystal is the low-temperature cubic phase α-In2Te3 , possessing a noncentrosymmetric defected ZnS structure with good second harmonic generation. Moreover, α-In2Te3 is revealed to be a p-type semiconductor with a direct and narrow bandgap value of 0.76 eV. The field effect transistor exhibits a high mobility of 18 cm2 V-1 s-1, and the photodetector demonstrates stable photoswitching behavior within a broadband photoresponse from 405 to 1064 nm, with a satisfactory response time of τrise = 1 ms. Notably, the α-In2Te3 nanoplates exhibit good stability against ambient environments. Together, these findings establish α-In2Te3 nanoplates as promising candidates for next-generation high-performance photonics and electronics.

Two-Dimensional Ultrathin Fe3Sn2 Kagome Metal with Defect-Dependent Magnetic Property

Two-dimensional (2D) Fe3Sn2, which is a room-temperature ferromagnetic kagome metal, has potential applications in spintronic devices. However, the systematic synthesis and magnetic study of 2D Fe3Sn2 single crystals have rarely been reported. Here we have synthesized 2D hexagonal and triangular Fe3Sn2 nanosheets by controlling the amount of FeCl2 precursors in the chemical vapor deposition (CVD) method. It is found that the hexagonal Fe3Sn2 nanosheets exist with Fe vacancy defects and show no obvious coercivity. While the triangular Fe3Sn2 nanosheet has obvious hysteresis loops at room temperature, its coercivity first increases and then remains stable with an increase in temperature, which should result from the competition of the thermal activation mechanism and spin direction rotation mechanism. A first-principles calculation study shows that the Fe vacancy defects in Fe3Sn2 can increase the distances between Fe atoms and weaken the ferromagnetism of Fe3Sn2. The resulting 2D Fe3Sn2 nanosheets provide a new choice for spintronic devices.

Epitaxial Growth of Large-Scale 2D CrTe2 Films on Amorphous Silicon Wafers With Low Thermal Budget

2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO2) and silicon nitride (SiNx). Here, a seeded growth technique for crystallizing CrTe2 films on amorphous SiNx/Si and SiO2/Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin-orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 ×  107 ℏ/2e  Ω⁻¹  m⁻¹), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.

Growth of Quasi-Two-Dimensional CrTe Nanoflakes and CrTe/Transition Metal Dichalcogenide Heterostructures

Two-dimensional (2D) van der Waals layered materials have been explored in depth. They can be vertically stacked into a 2D heterostructure and represent a fundamental way to explore new physical properties and fabricate high-performance nanodevices. However, the controllable and scaled growth of non-layered quasi-2D materials and their heterostructures is still a great challenge. Here, we report a selective two-step growth method for high-quality single crystalline CrTe/WSe2 and CrTe/MoS2 heterostructures by adopting a universal CVD strategy with the assistance of molten salt and mass control. Quasi-2D metallic CrTe was grown on pre-deposited 2D transition metal dichalcogenides (TMDC) under relatively low temperatures. A 2D CrTe/TMDC heterostructure was established to explore the interface's structure using scanning transmission electron microscopy (STEM), and also demonstrate ferromagnetism in a metal-semiconductor CrTe/TMDC heterostructure.

Stacking-dependent interlayer magnetic interactions in CrSe2

Recently, CrSe2, a new ferromagnetic van der Waals two-dimensional material, was discovered to be highly stable under ambient conditions, making it an attractive candidate for fundamental research and potential device applications. Here, we study the interlayer interactions of bilayer CrSe2using first-principles calculations. We demonstrate that the interlayer interaction depends on the stacking structure. The AA and AB stackings exhibit antiferromagnetic (AFM) interlayer interactions, while the AC stacking exhibits ferromagnetic (FM) interlayer interaction. Furthermore, the interlayer interaction can be further tuned by tensile strain and charge doping. Specifically, under large tensile strain, most stacking structures exhibit FM interlayer interactions. Conversely, under heavy electron doping, all stacking structures exhibit AFM interlayer interactions. These findings are useful for designing spintronic devices based on CrSe2.

Magnetic Skyrmions above Room Temperature in a van der Waals Ferromagnet Fe3GaTe2

2D van der Waals (vdW) ferromagnetic crystals are a promising platform for innovative spintronic devices based on magnetic skyrmions, thanks to their high flexibility and atomic thickness stability. However, room-temperature skyrmion-hosting vdW materials are scarce, which poses a challenge for practical applications. In this study, a chemical vapor transport (CVT) approach is employed to synthesize Fe3GaTe2 crystals and room-temperature Néel skyrmions are observed in Fe3GaTe2 nanoflakes above 58 nm in thickness through in situ Lorentz transmission electron microscopy (L-TEM). Upon an optimized field cooling procedure, zero-field hexagonal skyrmion lattices are successfully generated in nanoflakes with an extended thickness range (30-180 nm). Significantly, these skyrmion lattices remain stable up to 355 K, setting a new record for the highest temperature at which skyrmions can be hosted. The research establishes Fe3GaTe2 as an emerging above-room-temperature skyrmion-hosting vdW material, holding great promise for future spintronics.

Microscopy aided detection of the self-intercalation mechanism and in situ electronic properties in chromium selenide

Two-dimensional (2D) chromium-based self-intercalated materials Cr1+nX2 (0 ≤ n ≤ 1, X = S, Se, Te) have attracted much attention because of their tunable magnetism with good environmental stability. Intriguingly, the magnetic and electrical properties of the materials can be effectively tuned by altering the coverage and spatial arrangement of the intercalated Cr (ic-Cr) within the van der Waals gap, contributing to different stoichiometries. Several different Cr1+nX2 systems have been widely investigated recently; however, those with the same stoichiometric ratio (such as Cr1.25Te2) were reported to exhibit disparate magnetic properties, which still lacks explanation. Therefore, a systematic in situ study of the mechanisms with microscopy techniques is in high demand to look into the origin of these discrepancies. Herein, 2D self-intercalated Cr1+nSe2 nanoflakes were synthesized as a platform to conduct the characterization. Combining scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM), we studied in depth the microscopic structure and local electronic properties of the Cr1+nSe2 nanoflakes. The self-intercalation mechanism of ic-Cr and local stoichiometric-ratio variation in a Cr1+nSe2 ultrathin nanoflake is clearly detected at the nanometer scale. Scanning tunneling spectroscopy (STS) measurements indicate that Cr1.5Se2/Cr2Se2 and Cr1.25Se2 exhibit conductive and semiconductive behaviors, respectively. The STM tip manipulation method is further applied to manipulate the microstructure of Cr1+nSe2, which successfully produces clean zigzag-type boundaries. Our systematic microscopy study paves the way for the in-depth study of the magnetic mechanism of 2D self-intercalated magnets at the nano/micro scale and the development of new magnetic and spintronic devices.

Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides

Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.

Highly Robust Room-Temperature Interfacial Ferromagnetism in Ultrathin Co2Si Nanoplates

The reduced dimensionality and interfacial effects in magnetic nanostructures open the feasibility to tailor magnetic ordering. Here, we report the synthesis of ultrathin metallic Co2Si nanoplates with a total thickness that is tunable to 2.2 nm. The interfacial magnetism coupled with the highly anisotropic nanoplate geometry leads to strong perpendicular magnetic anisotropy and robust hard ferromagnetism at room temperature, with a Curie temperature (TC) exceeding 950 K and a coercive field (HC) > 4.0 T at 3 K and 8750 Oe at 300 K. Theoretical calculations suggest that ferromagnetism originates from symmetry breaking and undercoordinated Co atoms at the Co2Si and SiO2 interface. With protection by the self-limiting intrinsic oxide, the interfacial ferromagnetism of the Co2Si nanoplates exhibits excellent environmental stability. The controllable growth of ambient stable Co2Si nanoplates as 2D hard ferromagnets could open exciting opportunities for fundamental studies and applications in Si-based spintronic devices.

Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures

Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.

Direct growth of single-chiral-angle tungsten disulfide nanotubes using gold nanoparticle catalysts

Transition metal dichalcogenide (TMD) nanotubes offer a unique platform to explore the properties of TMD materials at the one-dimensional limit. Despite considerable efforts thus far, the direct growth of TMD nanotubes with controllable chirality remains challenging. Here we demonstrate the direct and facile growth of high-quality WS2 and WSe2 nanotubes on Si substrates using catalytic chemical vapour deposition with Au nanoparticles. The Au nanoparticles provide unique accommodation sites for the nucleation of WS2 or WSe2 shells on their surfaces and seed the subsequent growth of nanotubes. We find that the growth mode of nanotubes is sensitive to the temperature. With careful temperature control, we realize ~79% WS2 nanotubes with single chiral angles, with a preference of 30° (~37%) and 0° (~12%). Moreover, we demonstrate how the geometric, electronic and optical properties of the synthesized WS2 nanotubes can be modulated by the chirality. We anticipate that this approach using Au nanoparticles as catalysts will facilitate the growth of TMD nanotubes with controllable chirality and promote the study of their interesting properties and applications.

Van der Waals epitaxy of tunable moirés enabled by alloying

The unique physics in moiré superlattices of twisted or lattice-mismatched atomic layers holds great promise for future quantum technologies. However, twisted configurations are thermodynamically unfavourable, making accurate twist angle control during growth implausible. While rotationally aligned, lattice-mismatched moirés such as WSe2/WS2 can be synthesized, they lack the critical moiré period tunability, and their formation mechanisms are not well understood. Here, we report the thermodynamically driven van der Waals epitaxy of moirés with a tunable period from 10 to 45 nanometres, using lattice mismatch engineering in two WSSe layers with adjustable chalcogen ratios. Contrary to conventional epitaxy, where lattice-mismatch-induced stress hinders high-quality growth, we reveal the key role of bulk stress in moiré formation and its unique interplay with edge stress in shaping the moiré growth modes. Moreover, the superlattices display tunable interlayer excitons and moiré intralayer excitons. Our studies unveil the epitaxial science of moiré synthesis and lay the foundations for moiré-based technologies.

Turning Nonmagnetic Two-Dimensional Molybdenum Disulfides into Room-Temperature Ferromagnets by the Synergistic Effect of Lattice Stretching and Charge Injection

Exploring two-dimensional (2D) room-temperature magnetic materials in the field of 2D spintronics remains a formidable challenge. The vast array of nonmagnetic 2D materials provides abundant resources for exploration, but the strategy to convert them into intrinsic room-temperature magnets remains elusive. To address this challenge, we present a general strategy based on surface halogenation for the transition from nonmagnetism to intrinsic room-temperature ferromagnetism in 2D MoS2 based on first-principles calculations. The derived 2D halogenated MoS2 are half-semimetals with a high Curie temperature (TC) of 430-589 K and excellent stability. In-depth mechanistic studies revealed that this marvelous nonmagnetism-to-ferromagnetism transition originates from the modulation of the splitting as well as the occupation of the Mo d orbitals by the synergy of lattice stretching and charge injection induced by the surface halogenation. This work establishes a promising route for exploring 2D room-temperature magnetic materials from the abundant pool of 2D nonmagnetic counterparts.

Stoichiometry-Tunable Synthesis and Magnetic Property Exploration of Two-Dimensional Chromium Selenides

Emerging 2D chromium-based dichalcogenides (CrXn (X = S, Se, Te; 0 < n ≤ 2)) have provoked enormous interests due to their abundant structures, intriguing electronic and magnetic properties, excellent environmental stability, and great application potentials in next generation electronics and spintronics devices. Achieving stoichiometry-controlled synthesis of 2D CrXn is of paramount significance for such envisioned investigations. Herein, we report the stoichiometry-controlled syntheses of 2D chromium selenide (CrxSey) materials (rhombohedral Cr2Se3 and monoclinic Cr3Se4) via a Cr-self-intercalation route by designing two typical chemical vapor deposition (CVD) strategies. We have also clarified the different growth mechanisms, distinct chemical compositions, and crystal structures of the two type materials. Intriguingly, we reveal that the ultrathin Cr2Se3 nanosheets exhibit a metallic feature, while the Cr3Se4 nanosheets present a transition from p-type semiconductor to metal upon increasing the flake thickness. Moreover, we have also uncovered the ferromagnetic properties of 2D Cr2Se3 and Cr3Se4 below ∼70 K and ∼270 K, respectively. Briefly, this research should promote the stoichiometric-ratio controllable syntheses of 2D magnetic materials, and the property explorations toward next generation spintronics and magneto-optoelectronics related applications.

Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2

Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe2. The lattice-matched MoSe2 nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe2 with the formation of MoSe2-CrSe2 heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe2 monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe2 exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.

Coexistence of Ferroelectricity and Ferromagnetism in Atomically Thin Two-Dimensional Cr2S3/WS2 Vertical Heterostructures

Two-dimensional (2D) heterostructures with ferromagnetism and ferroelectricity provide a promising avenue to miniaturize the device size, increase computational power, and reduce energy consumption. However, the direct synthesis of such eye-catching heterostructures has yet to be realized up to now. Here, we design a two-step chemical vapor deposition strategy to growth of Cr2S3/WS2 vertical heterostructures with atomically sharp and clean interfaces on sapphire. The interlayer charge transfer and periodic moiré superlattice result in the emergence of room-temperature ferroelectricity in atomically thin Cr2S3/WS2 vertical heterostructures. In parallel, long-range ferromagnetic order is discovered in 2D Cr2S3 via the magneto-optical Kerr effect technique with the Curie temperature approaching 170 K. The charge distribution variation induced by the moiré superlattice changes the ferromagnetic coupling strength and enhances the Curie temperature. The coexistence of ferroelectricity and ferromagnetism in 2D Cr2S3/WS2 vertical heterostructures provides a cornerstone for the further design of logic-in-memory devices to build new computing architectures.

Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature

The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.

Controlled Growth of Submillimeter-Scale Cr5Te8 Nanosheets and the Domain Wall Nucleation Governed Magnetization Reversal Process

Two-dimensional (2D) ferromagnets have attracted widespread attention for promising applications in compact spintronic devices. However, the controlled synthesis of high-quality, large-sized, and ultrathin 2D magnets via facile, economical method remains challenging. Herein, we develop a hydrogen-tailored chemical vapor deposition approach to fabricating 2D Cr5Te8 ferromagnetic nanosheets. Interestingly, the time period of introducing hydrogen was found to be crucial for controlling the lateral size, and a Cr5Te8 single-crystalline nanosheet of lateral size up to ∼360 μm with single-unit-cell thickness has been obtained. These samples exhibit a leading role of domain wall nucleation in governing the magnetization reversal process, providing important references for optimizing the performances of associated devices. The nanosheets also show notable magnetotransport response, including nonmonotonous magnetic-field-dependent magnetoresistance and sizable anomalous Hall resistivity, demonstrating Cr5Te8 as a promising material for constructing high-performance magnetoelectronic devices. This study presents a breakthrough of large-sized CVD-grown 2D magnetic materials, which is indispensable for constructing 2D spintronic devices.

Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide

Multiferroic materials offer a promising avenue for manipulating digital information by leveraging the cross-coupling between ferroelectric and ferromagnetic orders. Despite the ferroelectricity has been uncovered by ion displacement or interlayer-sliding, one-unit-cell of multiferroic materials design and wafer-scale synthesis have yet to be realized. Here we develope an interface modulated strategy to grow 1-inch one-unit-cell of non-layered chromium sulfide with unidirectional orientation on industry-compatible c-plane sapphire. The interfacial interaction between chromium sulfide and substrate induces the intralayer-sliding of self-intercalated chromium atoms and breaks the space reversal symmetry. As a result, robust room-temperature ferroelectricity (retaining more than one month) emerges in one-unit-cell of chromium sulfide with ultrahigh remanent polarization. Besides, long-range ferromagnetic order is discovered with the Curie temperature approaching 200 K, almost two times higher than that of bulk counterpart. In parallel, the magnetoelectric coupling is certified and which makes 1-inch one-unit-cell of chromium sulfide the largest and thinnest multiferroics.

Above-Room-Temperature Ferromagnetism in Copper-Doped Two-Dimensional Chromium-Based Nanosheets

Two-dimensional ferromagnetic materials (2D-FMs) are expected to become ideal candidates for low-power, high-density information storage in next-generation spintronics devices due to their atomically ultrathin and intriguing magnetic properties. However, 2D-FMs with room-temperature Curie temperatures (Tc) are still rarely reported, which greatly hinders their research progress and practical applications. Herein, ultrathin Cu-doped Cr7Te8 FMs were successfully prepared and can achieve above-room-temperature ferromagnetism with perpendicular magnetic anisotropy via a facile chemical vapor deposition (CVD) method, which can be controlled down to an atomic thin layer of ∼3.4 nm. STEM-EDX quantitative analysis shows that the proportion of Cu to metal atoms is ∼5%. Moreover, based on the anomalous Hall effect (AHE) measurements in a six-terminal Hall bar device without any encapsulation as well as an out-of-plane magnetic field, the maximum Tc achieved ∼315 K when the thickness of the sample is ∼28.8 nm; even the ultrathin 7.6 nm sample possessed a near-room-temperature Tc of ∼275 K. Meanwhile, theoretical calculations elucidated the mechanism of the ferromagnetic enhancement of Cu-doped Cr7Te8 nanosheets. More importantly, the ferromagnetism of CVD-synthesized Cu-doped CrSe nanosheets can also be maintained above room temperature. Our work broadens the scope on room-temperature ferromagnets and their heterojunctions, promoting fundamental research and practical applications in next-generation spintronics.

Room-temperature ferromagnetic CoSe2nanoplates synthesized by chemical vapor deposition

Among novel two-dimensional materials, transition metal dichalcogenides (TMDs) with 3dmagnetic elements have been extensively researched owing to their unique magnetic, electric, and photoelectric properties. As an important member of TMDs, CoSe2is an interesting material with controversial magnetic properties, hitherto there are few reports related to the magnetism of CoSe2materials. Here, we report the synthesis of CoSe2nanoplates on Al2O3substrates by chemical vapor deposition (CVD). The CVD-grown CoSe2nanoplates exhibit three typical morphologies (regular hexagonal, hexagonal, and pentagonal shapes) and their lateral sizes and thickness of CoSe2nanoplates can reach up to hundreds of microns and several hundred nanometers, respectively. The electric-transport measurement shows a metallic feature of CoSe2nanoplates. Furthermore, the slanted hysteresis loop and nonzero remnant magnetization of the CoSe2nanoplates confirm the ferromagnetism in the temperature range of 5-400 K. This work provides a novel platform for designing CoSe2-based spintronic devices and studying related magnetic mechanisms.

van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device

The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.

Realization of Robust and Ambient-Stable Room-Temperature Ferromagnetism in Wide Bandgap Semiconductor 2D Carbon Nitride Sheets

Due to their weak intrinsic spin-orbit coupling and a distinct bandgap of 3.06 eV, 2D carbon nitride (CN) flakes are promising materials for next-generation spintronic devices. However, achieving strong room-temperature (RT) and ambient-stable ferromagnetism (FM) remains a huge challenge. Here, we demonstrate that the strong RT FM with a high Curie temperature (TC) up to ∼400 K and saturation magnetization (Ms) of 2.91 emu/g can be achieved. Besides, the RT FM exhibits excellent air stability, with Ms remaining stable for over 6 months. Through the magneto-optic Kerr effect, Hall device, X-ray magnetic circular dichroism, and magnetic force microscopy measurements, we acquired clear evidence of magnetic behavior and magnetic domain evolutions at room temperature. Electrical and optical measurements confirm that the Co-doped CN retains its semiconductor properties. Detailed structural characterizations confirm that the single-atom Co coordination and nitrogen defects as well as C-C covalent bonds are simultaneously introduced into CN. Density functional theory calculations reveal that introducing C-C bonds causes carrier spin polarization, and spin-polarized carrier-mediated magnetic exchange between adjacent Co atoms leads to long-range magnetic ordering in CN. We believe that our findings provide a strong experimental foundation for the enormous potential of 2D wide bandgap semiconductor spintronic devices.

A Janus CrSSe monolayer with interesting ferromagnetism

The search for intrinsic half-metallic ferromagnetic (FM) monolayers with a high Curie temperature (TC), considerable magnetic anisotropy energy (MAE), and multiferroic coupling is key for the development of ultra-compact spintronics. Here, we have identified a new stable FM Janus monolayer, the tetrahedral CrSSe, through first-principles structural search calculations, which not only exhibits very interesting magnetoelectric properties with a high TC of 790 K, a large MAE of 0.622 meV per Cr, and robust half-metallicity, but also shows obvious ferroelasticity with a modest energy barrier of 0.31 eV per atom. Additionally, there appears to be interesting multiferroic coupling between in-plane magnetization and ferroelasticity. Furthermore, by replacing the Se/S atoms in the CrSSe monolayer with S/Se atoms, we obtained two new half-metallic FM CrS2 and CrSe2 monolayers, which also exhibit excellent magnetoelectric properties. Therefore, our findings provide a pathway to design novel multiferroic materials and enrich the understanding of 2D transition metal chalcogenides.

Room-Temperature Magnetic Phase Transition in an Electrically Tuned van der Waals Ferromagnet

Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr_{1.2}Te_{2} observed at room temperature (290 K). This magnetism was tuned via a protonic gate with an electron doping concentration up to 3.8×10^{21}  cm^{-3}. We observed nonmonotonic evolutions in both coercivity and anomalous Hall resistivity. Under increased electron doping, the coercivities and anomalous Hall effects (AHEs) vanished, indicating a doping-induced magnetic phase transition. This occurred up to room temperature. DFT calculations showed the formation of an antiferromagnetic (AFM) phase caused by the intercalation of protons which induced significant electron doping in the Cr_{1.2}Te_{2}. The tunability of the magnetic properties and phase in room temperature magnetic vdW Cr_{1.2}Te_{2} is a significant step towards practical spintronic devices.