CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors

Oxidation-induced graded bandgap narrowing in Two-dimensional tin sulfide for high-sensitivity broadband photodetection

Two-dimensional (2D) layered group-IV monochalcogenides with large surface-to-volume ratio and high surface activity make that their structural and optoelectronic properties are sensitive to air oxidation. Here, we report the utilization of oxidation-induced gradient doping to modulate electronic structures and optoelectronic properties of 2D group-IV monochalcogenides by using SnS nanoplates grown by physical vapor deposition as a model system. By a precise control of oxidation time and temperature, the structural transition from SnS to SnSOx could be driven by the layer-by-layer oxygen doping and intercalation. The resulting SnSOx with a graded narrowing bandgap exhibits the enhanced optical absorption and photocurrent, leading to the fabricated SnSOx photodetector with remarkable photoresponsivity and fast response speed (<64 μs) at a broadband spectrum range of 520-1550 nm. The peak responsivity (7294 A/W) and detectivity (9.54 × 109 Jones) of SnSOx device are at least two orders of magnitude larger than those of SnS photodetector. Moreover, its photodetection performance can be competed with state-of-the-art of 2D materials-based photodetectors. This work suggests that the air oxidation could be utilized as an efficient strategy to engineer the electronic and optical properties of SnS and other 2D group-IV monochalcogenides for the development of high-performance broadband photodetectors.

Controlled Oxidation of Metallic Molybdenum Patterns via Joule Heating for Localized MoS2 Growth

High-quality two-dimensional transition metal dichalcogenides (2D TMDs), such as molybdenum disulfide (MoS2), have significant potential for advanced electrical and optoelectronic applications. This study introduces a novel approach to control the localized growth of MoS2 through the selective oxidation of bulk molybdenum patterns using Joule heating, followed by sulfurization. By passing an electric current through molybdenum patterns under ambient conditions, localized heating induced the formation of a molybdenum oxide layer, primarily MoO2 and MoO3, depending on the applied power and heating duration. These oxides act as nucleation sites for the subsequent growth of MoS2. The properties of the grown MoS2 films were investigated using Raman spectroscopy and photoluminescence measurements, showing promising film quality. This study demonstrates that Joule heating can be an effective method for precise control over TMD growth, offering a scalable approach for producing high-quality 2D materials that have the potential to be integrated into next-generation electrical and optoelectronic technologies.

Half-Metallic Antiferromagnetic 2D Nonlayered Cr2Se3 Nanosheets

Half-metallic magnetism, characterized by metallic behavior in one spin direction and semiconducting or insulating behavior in the opposite spin direction, is an intriguing and highly useful physical property for advanced spintronics because it allows for the complete realization of 100% spin-polarized current. Particularly, half-metallic antiferromagnetism is recognized as an excellent candidate for the development of highly efficient spintronic devices due to its zero net magnetic moment combined with 100% spin polarization, which results in lower energy losses and eliminates stray magnetic fields compared to half-metallic ferromagnets. However, the synthesis and characterization of half-metallic antiferromagnets have not been reported until now as the theoretically proposed materials require a delicate and challenging approach to fabricate such complex compounds. Here, we propose Cr2Se3 as the experimentally synthesizable half-metallic antiferromagnet. Our experimental and theoretical studies─including magnetic property measurements, spin-resolved density functional theory calculations, and tunneling magnetoresistance experiments─confirm its half-metallic antiferromagnetic behavior. We demonstrate that the 2D nonlayered Cr2Se3 synthesized via chemical vapor deposition offers an ideal platform for innovative spintronics applications and fundamental research into half-metallic antiferromagnets.

High-performance, fast-response photodetectors based on hydrothermally synthesized V1-xMoxSe2 nanosheets

With the demand for wearable and low-energy consumption devices, it is essential to fabricate high-performance and fast-response photodetectors using an effective, easy and low-cost technique. In this regard, MoSe2-based transition metal dichalcogenides are promising materials for their potential applications in future nanoscale electronic/optoelectronic devices. The current work demonstrates the optical, electrical, and photoresponsivity performance of V1-xMoxSe2 (x = 0, 0.05, 0.10, 0.15, 0.20) nanocomposites synthesized using a facile hydrothermal method with varying V and Mo contents. X-ray diffraction analysis was performed to investigate their polycrystalline structure. Raman study confirmed the existence of VSe2 and MoSe2 phases in the prepared samples. Bare VSe2 shows a nano-flower-like morphology, whereas the Mo-doped V1-xMoxSe2 structure changed to nanosheets as verified from field emission scanning electron microscopy. The optical analysis showed the bandgaps of the synthesized samples varying between 1.2 eV and 2.5 eV. These low-bandgap materials play significant roles in optoelectronic devices like LEDs, solar cells, and photodetectors. The oxidation states of the different elements were probed using X-ray photoelectron spectroscopy. The I-V measurement showed better electrical conductivity. Photodetection measurements yield figures of merit such as sensitivity, responsivity, and detectivity values. A high Ion/Ioff ratio is demonstrated by the time-dependent photo-response characteristics of the VSe2 sample, which is remarkable for creating sensitive photodetectors.

MoSe2-Sensitized Water Splitting Assisted by C60-Dendrons on the Basal Surface

To facilitate water splitting using MoSe2 as a light absorber, we fabricated water-dispersible MoSe2/C60-dendron nanohybrids via physical modification of the basal plane of MoSe2. Upon photoirradiation, the mixed-dimension MoSe2/C60 (2D/0D) heterojunction generates a charge-separated state (MoSe2⋅+/C60⋅-) through electron extraction from the exciton in MoSe2 to C60. This process is followed by the hydrogen evolution reaction (HER) from water in the presence of a sacrificial donor (1-benzyl-1,4-dihydronicotinamide) and co-catalyst (Pt-PVP). The apparent quantum yields of the HER were estimated to be 0.06 % and 0.27 % upon photoexcitation at the A- and B-exciton absorption peaks (λmax=800 and 700 nm), respectively.

Notable synthesis, properties and chemical gas sensing trends on molybdenum disulphides and diselenides two-dimensional nanostructures: A critical review

Evaluation of synthesis methods, notable properties, and chemical gas sensing properties of molybdenum disulphides and diselenides two-dimensional nanosheets is unfold. This is motivated by the fact that the two dichalcogenides have good sensitivity and selectivity to different harmful gases at ambient temperatures. Synthesis methods explored include exceptional top-down and bottom-up approaches, which consider physical and chemical compositional inceptions. Mechanical exfoliation in both molybdenum disulphides and diselenides nanosheets demonstrate good crystalline purity with structural alterations under varying stacking conditions. These chalcogenides exhibit low energy band gaps of ±1.80 eV for MoS2 and ±1.60 eV for MoSe2, which reduces with introduction of impurities. Thus, upon doping with other metal elements, a transformation from either n-type or p-type semiconductors is normally observed, leading to tuneable electronic properties. Thus, different gases such as methane, ethanol, toluene, ammonia, nitrogen oxide have been systematically detected using molybdenum disulphide and diselenide based thin films as sensing platforms. This review highlights structural, electronic and morphological characteristics of the two dichalcogenides which influences the sensitivity and selectivity ability for a couple of gases at ambient temperatures. The strategies for enhancing the selectivity by introducing defects, impurities and interfacing with other composites expanding the choice of these gases wider is also discussed in details. The review also provides overviews of challenges and limitations that open new research avenues to further enriching both chalcogenides as flexible, stable and cost effective state-of-the-art chemical gas sensors.

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

Confinement of excited states in two-dimensional, in-plane, quantum heterostructures

Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission (g2(0) ~ 0.4) was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.

Growth of Wafer-Scale Single-Crystal 2D Semiconducting Transition Metal Dichalcogenide Monolayers

Due to extraordinary electronic and optoelectronic properties, large-scale single-crystal two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) monolayers have gained significant interest in the development of profit-making cutting-edge nano and atomic-scale devices. To explore the remarkable properties of single-crystal 2D monolayers, many strategies are proposed to achieve ultra-thin functional devices. Despite substantial attempts, the controllable growth of high-quality single-crystal 2D monolayer still needs to be improved. The quality of the 2D monolayer strongly depends on the underlying substrates primarily responsible for the formation of grain boundaries during the growth process. To restrain the grain boundaries, the epitaxial growth process plays a crucial role and becomes ideal if an appropriate single crystal substrate is selected. Therefore, this perspective focuses on the latest advances in the growth of large-scale single-crystal 2D TMD monolayers in the light of enhancing their industrial applicability. In the end, recent progress and challenges of 2D TMD materials for various potential applications are highlighted.

Printed MoSe2/GaAs Photodetector Enabling Ultrafast and Broadband Photodetection up to 1.5 μm

The development of high-performance and low-cost photodetectors (PDs) capable of detecting a broad range of wavelengths, from ultraviolet (UV) to near-infrared (NIR), is crucial for applications in sensing, imaging, and communication systems. This work presents a novel approach for printing a broadband PD based on a heterostructure of two-dimensional (2D) molybdenum diselenide (MoSe2) and gallium arsenide (GaAs). The fabrication process involves a precise technique to print MoSe2 nanoflower (NF) ink onto a prepatterned GaAs substrate. The resulting heterostructure exhibits unique properties, leveraging the exceptional electronic and optical characteristics of both GaAs and 2D MoSe2. The fabricated PD achieves an astounding on-off ratio of ∼105 at 5 V bias while demonstrating an exceptional on-off ratio of ∼104 at 0 V. The depletion region between GaAs and MoSe2 facilitates efficient charge generation and separation and collection of photogenerated carriers. This significantly improves the performance of the PD, resulting in a notably high responsivity across the spectrum. The peak responsivity of the device is 5.25 A/W at 5 V bias under 808 nm laser excitation, which is more than an order of magnitude higher than that of any commercial NIR PDs. Furthermore, the device demonstrates an exceptional responsivity of 0.36 A/W under an external bias of 0 V. The printing technology used here offers several advantages including simplicity, scalability, and compatibility with large-scale production. Additionally, it enables precise control over the placement and integration of the MoSe2 NF onto the GaAs substrate, ensuring uniformity and reliability in device performance. The exceptional responsivity across a broad spectral range (360-1550 nm) and the success of the printing technique make our MoSe2/GaAs heterostructure PD promising for future low-cost and efficient optoelectronic devices.

Direct Characterization of Buried Interfaces in 2D/3D Heterostructures Enabled by GeO2 Release Layer

Inconsistent interface control in devices based on two-dimensional materials (2DMs) has limited technological maturation. Astounding variability of 2D/three-dimensional (2D/3D) interface properties has been reported, which has been exacerbated by the lack of direct investigations of buried interfaces commonly found in devices. Herein, we demonstrate a new process that enables the assembly and isolation of device-relevant heterostructures for buried interface characterization. This is achieved by implementing a water-soluble substrate (GeO2), which enables deposition of many materials onto the 2DM and subsequent heterostructure release by dissolving the GeO2 substrate. Here, we utilize this novel approach to compare how the chemistry, doping, and strain in monolayer MoS2 heterostructures fabricated by direct deposition vary from those fabricated by transfer techniques to show how interface properties differ with the heterostructure fabrication method. Direct deposition of thick Ni and Ti films is found to react with the monolayer MoS2. These interface reactions convert 50% of MoS2 into intermetallic species, which greatly exceeds the 10% conversion reported previously and 0% observed in transfer-fabricated heterostructures. We also measure notable differences in MoS2 carrier concentration depending on the heterostructure fabrication method. Direct deposition of thick Au, Ni, and Al2O3 films onto MoS2 increases the hole concentration by >1012 cm-2 compared to heterostructures fabricated by transferring MoS2 onto these materials. Thus, we demonstrate a universal method to fabricate 2D/3D heterostructures and expose buried interfaces for direct characterization.

Scalable Fabrication of High-Performance Self-Powered a-MoSe2 Thin-Film-Based Photodetectors on a-SiO2/Si Substrates

Owing to its high stability, suitable absorption band gap, and fast response time, MoSe2 has attracted the most attention in transition-metal dichalcogenides (TMDCs) for photodetector (PD) applications. In this study, based on centimeter-scale smooth amorphous MoSe2 (a-MoSe2) thin films with thicknesses varying from 6.5 to 62.5 nm on a-SiO2/Si substrates prepared by polymer-assisted deposition, metal-semiconductor-metal-structured self-powered a-MoSe2 PDs are designed and fabricated. Our data show that the PD based on 9.5 nm thick a-MoSe2 thin film exhibits the highest values of photocurrent (Iph, 4.60 μA), photo-to-dark current ratio (PDCR, 3067), photoresponsivity (Rλ, 0.94 mA/W), and detectivity (D*, 4.29 × 1010 Jones), as well as the lowest values of noise-equivalent power (NEP, 2.33 × 10-11 W/Hz1/2) and photoresponse rise/decay time (61/58 ms) under a 405 nm laser with 5 mW power at zero bias, which are better than or comparable with those of previously reported PDs based on crystalline MoSe2 monolayers or other atomically thin 2D materials under bias voltage. The high-performance mechanism can be explained in terms of the energy band theory and volume modulation photoconductive gain model in a-MoSe2 with a spontaneous built-in electric field. Our work provides a scalable low-cost way for the design and fabrication of high-performance self-powered TMDC PDs.

Delaminated MnPS3 with Multiple Layers Coupled with Si Featuring Ultrahigh Detectivity and Environmental Stability for UV Photodetection

Silicon (Si), the dominant semiconductor in microelectronics yet lacking optoelectronic functionalities in UV regions, has been researched extensively to make revolutionary changes. In this study, the inherent drawback of Si on optoelectronic functionalities in UV regions is potentially overcome through heterostructure coupling of delaminated p-type MnPS3, having bulk, multiple-layer, and few-layer features, with n-type Si. By artificially mimicking the architectures of shrubs with unique UV shading phenomena, the revolutionary multiple-layer MnPS3 structures with staggered stacking configurations trigger outstanding UV photosensing performances, displaying an average EQE value of 1.1 × 103%, average photoresponsivity of 3.1 × 102 A/W, average detectivity of 1.9 × 1014 cm Hz1/2W1-, and average on/off ratio of 1.8 × 103 under 365 nm light. To the best of our knowledge, this is the first attempt toward realizing gate-free MnPS3-based UV photodetectors, while all of the photodetection outcomes are better than those of more sophisticated field-effect transistor (FET) designs, which have remarkable impacts on the practicality and functionality of next-generation UV optoelectronics.

Epitaxial van der Waals contacts of 2D TaSe2-WSe2 metal-semiconductor heterostructures

The electronic contact between two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors and metal electrodes is a formidable challenge due to the undesired Schottky barrier, which severely limits the electrical performance of TMD devices and impedes the exploration of their unconventional physical properties and potential electronic applications. In this study, we report a two-step chemical vapor deposition (CVD) growth of 2D TaSe2-WSe2 metal-semiconductor heterostructures. Raman mapping confirms the precise spatial modulation of the as-grown 2D TaSe2-WSe2 heterostructures. Transmission electron microscopy (TEM) characterization reveals that this two-step method provides a high-quality and clean interface of the 2D TaSe2-WSe2 heterostructures. Meanwhile, the upper 1T-TaSe2 is formed heteroepitaxially on/around the pre-synthesized 2H-WSe2 monolayers, exhibiting an epitaxial relationship of (20-20)TaSe2//(20-20)WSe2 and [0001]TaSe2//[0001]WSe2. Furthermore, characterization studies using a Kelvin probe force microscope (KPFM) and electrical transport measurements present compelling evidence that the 2D metal-semiconductor heterostructures under investigation can improve the performance of electrical devices. These results bear substantial significance in augmenting the properties of field-effect transistors (FETs), leading to notable improvements in FET mobility and on/off ratio. Our study not only broadens the horizons of direct growth of high-quality 2D metal-semiconductor heterostructures but also sheds light on potential applications in future high-performance integrated circuits.

A fully printed ultrafast Si/WS2 quantum dot photodetector with very high responsivity over the UV to near-infrared region

Two-dimensional (2D) semiconducting material-based photodetectors (PDs) with high responsivity and fast photo-response are of great interest for various applications such as optical communications, biomedical imaging, security surveillance, environmental monitoring, etc. Additive manufacturing such as 2D printing is a potentially less cumbersome and cost-effective alternative to conventional microdevice fabrication processes used in the production of PDs. Here, we have fabricated a Si/WS2 quantum dot-based heterostructure PD with a very short electrode gap of 40 μm by a simple printing process. The printed p-Si/n-WS2 PD shows an excellent photo-to-dark current ratio of 5121 under 405 nm illumination (23.8 mW cm-2). The printed photodetector exhibits a peak responsivity of 126 A W-1 and a peak detectivity of 9.24 × 1012 Jones over a very broad wavelength range (300-1100 nm), which is much superior to commercial Si PDs. A high external quantum efficiency of 3.9 × 104% and an ultrafast photoresponse (7.8 μs rise time and 9.5 μs fall time) make the device an attractive candidate as an efficient photodetector. The origin of high-performance photodetection is traced to a nearly defect-free interface at the heterojunction, leading to highly efficient charge separation and high photocurrent. Finally, the 2D-printed device exhibits good photodetection even in self-powered conditions, which is very attractive.

Bi2O2Se Nanowire/MoSe2 Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel

In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area and mechanical flexibility of 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, optical switches, etc. Herein, 1D Bi₂O₂Se nanowires have been successfully synthesized via chemical vapor deposition. Impressively, the strongest Raman vibration modes can be achieved along the short edge (y-axis) of Bi₂O₂Se nanowires with high crystalline quality, which originate from Se and Bi vacancies. Moreover, the Bi₂O₂Se/MoSe₂ photodiode designed with type-II band alignment demonstrates a high rectification ratio of 10³. Intuitively, the photocurrent peaks are mainly distributed in the overlapped region under the self-powered mode and reverse bias, within the wavelength range of 400-nm. The resulting device exhibits excellent optoelectrical performances, including high responsivities (R) and fast response speed of 656 mA/W and 350/380 μs (zero bias) and 17.17 A/W and 100/110 μs (-1 V) under 635 nm illumination, surpassing the majority of reported mixed-dimensional photodiodes. The most significant feature of our photodiode is its highest photocurrent anisotropic ratio of ∼2.2 (-0.8 V) along the long side (x-axis) of Bi₂O₂Se nanowires under 635 nm illumination. The above results reveal a robust and distinctive correlation between structural defects and polarized orientation for 1D Bi₂O₂Se nanowires. Furthermore, 1D Bi₂O₂Se nanowires appear to be a great potential candidate for high-performance rectifiers, polarization-sensitive photodiodes, and phototransistors based on mixed vdWs heterostructures.

Morphological dependent exciton dynamics and thermal transport in MoSe2 films

Thermal transport and exciton dynamics of semiconducting transition metal dichalcogenides (TMDCs) play an immense role in next-generation electronic, photonic, and thermoelectric devices. In this work, we synthesize distinct morphologies (snow-like and hexagonal) of a trilayer MoSe₂ film over the SiO₂/Si substrate via the chemical vapor deposition (CVD) method and investigated their morphological dependent exciton dynamics and thermal transport behaviour for the first time to the best of our knowledge. Firstly, we studied the role of spin-orbit and interlayer couplings both theoretically as well as experimentally via first-principles density functional theory and photoluminescence study, respectively. Further, we demonstrate morphological dependent thermal sensitive exciton response at low temperatures (93-300 K), showing more dominant defect-bound excitons (E_L) in snow-like MoSe₂ compared to hexagonal morphology. We also examined the morphological-dependent phonon confinement and thermal transport behaviour using the optothermal Raman spectroscopy technique. To provide insights into the nonlinear temperature-dependent phonon anharmonicity, a semi-quantitative model comprising volume and temperature effects was used, divulging the dominance of three-phonon (four-phonon) scattering processes for thermal transport in hexagonal (snow-like) MoSe₂. The morphological impact on thermal conductivity (k_s) of MoSe₂ has also been examined here by performing the optothermal Raman spectroscopy, showing k_s ∼ 36 ± 6 W m^-1 K^-1 for snow-like and ∼41 ± 7 W m^-1 K^-1 for hexagonal MoSe₂. Our research will contribute to the understanding of thermal transport behaviour in different morphologies of semiconducting MoSe₂, finding suitability for next-generation optoelectronic devices.

Laser-assisted synthesis of two-dimensional transition metal dichalcogenides: a mini review

The atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted the researcher's interest in the field of flexible electronics due to their high mobility, tunable bandgaps, and mechanical flexibility. As an emerging technique, laser-assisted direct writing has been used for the synthesis of TMDCs due to its extremely high preparation accuracy, rich light-matter interaction mechanism, dynamic properties, fast preparation speed, and minimal thermal effects. Currently, this technology has been focused on the synthesis of 2D graphene, while there are few literatures that summarize the progress in direct laser writing technology in the synthesis of 2D TMDCs. Therefore, in this mini-review, the synthetic strategies of applying laser to the fabrication of 2D TMDCs have been briefly summarized and discussed, which are divided into top-down and bottom-up methods. The detailed fabrication steps, main characteristics, and mechanism of both methods are discussed. Finally, prospects and further opportunities in the booming field of laser-assisted synthesis of 2D TMDCs are addressed.

Gap plasmon modes and plasmon-exciton coupling in a hybrid Au/MoSe2/Au tunneling junction

The light-matter interaction between plasmonic nanocavity modes and excitons at the nanometer scale is here addressed in the scanning tunneling microscope configuration where an MoSe₂ monolayer is located between the tip and the substrate. We investigate by optical excitation the electromagnetic modes of this hybrid Au/MoSe₂/Au tunneling junction using numerical simulations where electron tunneling and the anisotropic character of the MoSe₂ layer are taken into account. In particular, we pointed out gap plasmon modes and Fano-type plasmon-exciton coupling taking place at the MoSe₂/Au substrate interface. The spectral properties and spatial localization of these modes are studied as a function of the tunneling parameters and incident polarization.

Large-scale fabrication and Mo vacancy-induced robust room-temperature ferromagnetism of MoSe2 thin films

Molybdenum selenide (MoSe₂) has recently attracted particular attention due to its room-temperature ferromagnetism (RTFM) and related spintronic applications. However, not only does the FM mechanism of MoSe₂ remain controversial, but also the synthesis of MoSe₂ thin films with robust RTFM is still an unmet challenge. Here it is shown that using polymer-assisted deposition under appropriate growth conditions, large-scale (4 cm × 4 cm) synthesis of MoSe₂ thin films with robust RTFM and a smooth surface (roughness average ∼0.22 nm) is possible. A new record-high saturation magnetization (6.69 emu g^-1) is achieved in the prepared MoSe₂ thin films, about 5 times the previously reported record (1.39 emu g^-1) obtained in 2H-MoSe₂ nanoflakes. Meanwhile, the coercivity of the MoSe₂ films can be tuned down to a new record-low value (5.0 Oe), one-tenth of the previously reported record. Notably, detailed analysis combining the experimental findings and calculation results shows that the robust RTFM mainly comes from the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction between the magnetic moments induced by abundant Mo vacancies (V_Mos) in the MoSe₂ films. Our results give insights into the large-scale production and robust RTFM of MoSe₂ thin films and may provide a platform for designing and fabricating spintronic materials and devices based on transition-metal dichalcogenides.

Liquid-precursor-intermediated synthesis of atomically thin transition metal dichalcogenides

With the rapid development of integrated electronics and optoelectronics, methods for the scalable industrial-scale growth of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have become a hot research topic. However, the control of gas distribution of solid precursors in common chemical vapor deposition (CVD) is still a challenge, resulting in the growth of 2D TMDs strongly influenced by the location of the substrate from the precursor powder. In contrast, liquid-precursor-intermediated growth not only avoids the use of solid powders but also enables the uniform distribution of precursors on the substrate through spin-coating, which is much more favorable for the synthesis of wafer-scale TMDs. Moreover, the spin-coating process based on liquid precursors can control the thickness of the spin-coated films by regulating the solution concentration and spin-coating speed. Herein, this review focuses on the recent progress in the synthesis of 2D TMDs based on liquid-precursor-intermediated CVD (LPI-CVD) growth. Firstly, the different assisted treatments based on LPI-CVD strategies for monolayer 2D TMDs are introduced. Then, the progress in the regulation of the different physical properties of monolayer 2D TMDs by substitution of the transition metal and their corresponding heterostructures based on LPI-CVD growth are summarized. Finally, the challenges and perspectives of 2D TMDs based on the LPI-CVD method are discussed.

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced.

The growth mechanism and intriguing optical and electronic properties of few-layered HfS2

Due to electronic properties superior to group VIB (Mo and W) transition metal dichalcogenides (TMDs), group IVB (Hf and Zr) TMDs have become intriguing materials in next-generation nanoelectronics. Therefore, the growth of few-layered hafnium disulfide (HfS₂) on c-plane sapphire as well as on a SiO₂/Si substrate has been demonstrated using chemical vapour deposition (CVD). The structural properties of HfS₂ were investigated by recording X-ray diffraction patterns and Raman spectra. The XRD results reveal that the layers are well oriented along the (0001) direction and exhibit the high crystalline quality of HfS₂. The Raman spectra confirm the in-plane and out-plane vibration of Hf and S atoms. Moreover, the HfS₂ layers exhibit strong absorption in the UV to visible region. The HfS₂ layer-based photodetector shows a photoresponsivity of ∼1.6, ∼0.38, and ∼0.21 μA W^-1 corresponding to 9, 38, and 68 mW cm^-2, respectively under green light illumination and is attributed to the generation of a large number of electron-hole pairs in the active region of the device. Besides, it also exhibits the highly crystalline structure of HfS₂ at high deposition temperature. The PL spectrum shows a single peak at ∼1.8 eV and is consistent with the pristine indirect bandgap of HfS₂ (∼2 eV). Furthermore, a few layered HfS₂ back gate field-effect transistor (FET) is fabricated based on directly grown HfS₂ on SiO₂/Si, and the device exhibits p-type behaviour. Thus, the controllable and easy growth method opens the latest pathway to synthesize few layered HfS₂ on different substrates for various electronic and optoelectronic devices.

Ferroelectric-gated MoSe2photodetectors with high photoresponsivity

Ferroelectric transistors with semiconductors as the channel material and ferroelectrics as the gate insulator have potential applications in nanoelectronics. We report in-situ modulation of optoelectronic properties of MoSe₂thin flakes on ferroelectric 0.7PbMg_1/3Nb_2/3O₃-0.3PbTiO₃(PMN-PT). Under the excitation of 638 nm laser, the photoresponsivity can be greatly boosted to 59.8 A W^-1and the detectivity to 3.2 × 10¹⁰Jones, with the improvement rates of about 1500% and 450%, respectively. These results suggest hybrid structure photodetector of two-dimensional layered material and ferroelectric has great application prospects in photoelectric detector.

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe2

The limitation on the spintronic applications of van der Waals layered transition-metal dichalcogenide semiconductors is ascribed to the intrinsic nonmagnetic feature. Recent studies have proved that substitutional doping is an effective route to alter the magnetic properties of two-dimensional transition-metal dichalcogenides (TMDs). However, highly valid and repeatable substitutional doping of TMDs remains to be developed. Herein, we report group VIII magnetic transition metal-doped molybdenum diselenide (MoSe₂) single crystals via a one-pot mixed-salt-intermediated chemical vapor deposition method with high controllability and reproducibility. The high-angle annular dark-field scanning transmission electron microscopy studies further confirm that the sites of Fe are indeed substitutionally incorporated into the MoSe₂ monolayer. The Fe-doped MoSe₂ monolayer with a concentration from 0.93% to 6.10% could be obtained by controlling the ratios of FeCl₃/Na₂MoO₄. Moreover, this strategy can be extended to create Co(Ni)-doped MoSe₂ monolayers. The magnetic hysteresis (M-H) measurements demonstrate that group VIII magnetic transition-metal-doped MoSe₂ samples exhibit room-temperature ferromagnetism. Additionally, the Fe-doped MoSe₂ field effect transistor shows n-type semiconductor characteristics, indicating the obtainment of a room-temperature dilute magnetic semiconductor. Our approach is universal in magnetic transition-metal substitutional doping of TMDs, and it inspires further research interest in the study of related spintronic and magnetoelectric applications.

2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications

Two-dimensional (2D) materials have been widely used in photodetectors owing to their diverse advantages in device fabrication and manipulation, such as integration flexibility, availability of optical operation through an ultrabroad wavelength band, fulfilling of photonic demands at low cost, and applicability in photodetection with high-performance. Recently, transition metal dichalcogenides (TMDCs), black phosphorus (BP), III-V materials, heterostructure materials, and graphene have emerged at the forefront as intriguing basics for optoelectronic applications in the field of photodetection. The versatility of photonic systems composed of these materials enables their wide range of applications, including facilitation of chemical reactions, speeding-up of responses, and ultrasensitive light detection in the ultraviolet (UV), visible, mid-infrared (MIR), and far-infrared (FIR) ranges. This review provides an overview, evaluation, recent advancements as well as a description of the innovations of the past few years for state-of-the-art photodetectors based on two-dimensional materials in the wavelength range from UV to IR, and on the combinations of different two-dimensional crystals with other nanomaterials that are appealing for a variety of photonic applications. The device setup, materials synthesis, operating methods, and performance metrics for currently utilized photodetectors, along with device performance enhancement factors, are summarized.

Self-powered, low-noise and high-speed nanolayered MoSe2/p-GaN heterojunction photodetector from ultraviolet to near-infrared wavelengths

Integration of nanolayered metal chalcogenides with wide-bandgap semiconductors forming pn heterojunction leads to the way of high-performance photodetection. This work demonstrates the fabrication of a few nanometer thick Molybdenum diselenide (MoSe₂)/Mg-doped Gallium Nitride (p-GaN) heterostructure for light detection purposes. The device exhibits low noise broadband spectral response from ultraviolet to near-infrared range (300-950 nm). The band-alignment and the charge transfer at the MoSe₂/p-GaN interface promote self-powered photodetection with high photocurrent to dark current ratio of 2000 and 1000 at 365 nm and 640 nm, respectively. A high responsivity of 130 A W^-1, detectivity of 4.8 × 10¹⁰Jones, and low noise equivalent power of 18 fW/Hz^1/2at 365 nm is achieved at an applied bias of 1 V. Moreover, the transient measurements reveal a fast rise/fall time of 407/710μsec for the fabricated device. These outcomes exemplify the viability of MoSe₂/p-GaN heterostructure for high-speed and low-noise broadband photodetector applications.

Role of processing parameters in CVD grown crystalline monolayer MoSe2

The quality of as-synthesized monolayers plays a significant role in atomically thin semiconducting transition metal dichalcogenides (TMDCs) to determine the electronic and optical properties. For designing optoelectronic devices, exploring the effect of processing parameters on optical properties is a prerequisite. In this view, we present the influence of processing parameters on the lattice and quasiparticle dynamics of monolayer MoSe₂. The lab-built chemical vapour deposition (CVD) setup is used to synthesize monolayer MoSe₂ flakes with varying shapes, including sharp triangle (ST), truncated triangle (TT), hexagon, and rough edge circle (REC). In particular, the features of as-synthesized monolayer MoSe₂ flakes are examined using Raman and photoluminescence (PL) spectroscopy. Raman spectra reveal that the frequency difference between the A_1g and E¹_2g peaks is >45 cm⁻¹ in all the monolayer samples. PL spectroscopy also shows that the synthesized MoSe₂ flakes are monolayer in nature with a direct band gap in the range of 1.50–1.58 eV. Furthermore, the variation in the direct band gap is analyzed using the spectral weight of quasiparticles in PL emission, where the intensity ratio {I(A⁰)/I(A⁻)} and trion binding energy are found to be ∼1.1–5.0 and ∼23.1–47.5 meV in different monolayer MoSe₂ samples. Hence, these observations manifest that the processing parameters make a substantial contribution in tuning the vibrational and excitonic properties.

Monolayer MoSe₂ flakes with varying shapes, including sharp triangle, truncated triangle, hexagon, and rough edge circle are synthesized using APCVD method. The lattice and quasiparticle dynamics are examined under different growth conditions.

Quantum emitters and detectors based on 2D van der Waals materials

Light plays an essential role in our world, with several technologies relying on it. Photons will also play an important role in the emerging quantum technologies, which are primed to have a transformative effect on our society. The development of single-photon sources and ultra-sensitive photon detectors is crucial. Solid-state emitters are being heavily pursued for developing truly single-photon sources for scalable technology. On the detectors' side, the main challenge lies in inventing sensitive detectors operating at sub-optical frequencies. This review highlights the promising research being conducted for the development of quantum emitters and detectors based on two-dimensional van der Waals (2D-vdW) materials. Several 2D-vdW materials, from canonical graphene to transition metal dichalcogenides and their heterostructures, have generated a lot of excitement due to their tunable emission and detection properties. The recent developments in the creation, fabrication and control of quantum emitters hosted by 2D-vdW materials and their potential applications in integrated photonic devices are discussed. Furthermore, the progress in enhancing the photon-counting potential of 2D material-based detectors, viz. 2D photodetectors, bolometers and superconducting single-photon detectors functioning at various wavelengths is also reported.

Self-Driven Broadband Photodetectors Based on MoSe2/FePS3 van der Waals n-p Type-II Heterostructures

Two-dimensional (2D) van der Waals materials with broadband optical absorption are promising candidates for next-generation UV-vis-NIR photodetectors. FePS₃, one of the emerging antiferromagnetic van der Waals materials with a wide bandgap and p-type conductivity, has been reported as an excellent candidate for UV optoelectronics. However, a high sensitivity photodetector with a self-driven mode based on FePS₃ has not yet been realized. Here, we report a high-performance and self-powered photodetector based on a multilayer MoSe₂/FePS₃ type-II n-p heterojunction with a working range from 350 to 900 nm. The presented photodetector operates at zero bias and at room temperature under ambient conditions. It exhibits a maximum responsivity (R_max) of 52 mA W^-1 and an external quantum efficiency (EQE_max) of 12% at 522 nm, which are better than the characteristics of its individual constituents and many other photodetectors made of 2D heterostructures. The high performance of MoSe₂/FePS₃ is attributed to the built-in electric field in the MoSe₂/FePS₃ n-p junction. Our approach provides a promising platform for broadband self-driven photodetector applications.

Plasmonic MXene Nanoparticle-Enabled High-Performance Two-Dimensional MoS2 Photodetectors

Two-dimensional (2D) molybdenum disulfide (MoS₂) has emerged as a prospective candidate for photodetection. However, due to the surface defects formed during the synthesis, the low photoresponse of 2D MoS₂ photodetectors restricts its practical applications. Here, we developed a hybrid plasmonic structure that integrates MXene nanoparticles (MNPs) and 2D MoS₂. With the introduction of MNPs, light waves are concentrated on MoS₂ nanosheets via a strong localized surface plasmon resonance. Consequently, MNPs-decorated MoS₂ photodetectors exhibit an improved photoresponse, including a higher responsivity (20.67 A/W), a larger detectivity of 5.39 × 10¹² Jones, and a maximum external quantum efficiency of over 5000%. A 150-fold enhanced detectivity (2.33 × 10¹² Jones) was achieved under 635 nm light illumination in the optimized device. These results provide an alternative approach for improving the photoresponse of MoS₂ photodetectors.

CVD-Assisted Synthesis of 2D Layered MoSe2 on Mo Foil and Low Frequency Raman Scattering of Its Exfoliated Few-Layer Nanosheets on CaF2 Substrates

Transition-metal dichalcogenides (TMDCs) are unique layered materials with exotic properties. So, examining their structures holds tremendous importance. 2H-MoSe₂ (analogous to MoS₂; Gr. 6 TMDC) is a crucial optoelectronic material studied extensively using Raman spectroscopy. In this regard, low-frequency Raman (LFR) spectroscopy can probe this material's structure as it reveals distinct vibration modes. Here, we focus on understanding the microstructural evolution of different 2H-MoSe₂ morphologies and their layers using LFR scattering. We grew phase-pure 2H-MoSe₂ (with variable microstructures) directly on a Mo foil using a two-furnace ambient-pressure chemical vapor deposition (CVD) system by carefully controlling the process parameters. We analyzed the layers of exfoliated flakes after ultrasonication and drop-cast 2H-MoSe₂ of different layer thicknesses by choosing different concentrations of 2H-MoSe₂ solutions. Further detailed analyses of the respective LFR regions confirm the presence of newly identified Raman signals for the 2H-MoSe₂ nanosheets drop-cast on Raman-grade CaF₂. Our results show that CaF₂ is an appropriate Raman-enhancing substrate compared to Si/SiO₂ as it presents new LFR modes of 2H-MoSe₂. Therefore, CaF₂ substrates are a promising medium to characterize in detail other TMDCs using LFR spectroscopy.

The elemental 2D materials beyond graphene potentially used as hazardous gas sensors for environmental protection

The intrinsic and electronic properties of elemental two-dimensional (2D) materials beyond graphene are first introduced in this review. Then the studies concerning the application of gas sensing using these 2D materials are comprehensively reviewed. On the whole, the carbon-, nitrogen-, and sulfur-based gases could be effectively detected by using most of them. For the sensing of organic vapors, the borophene, phosphorene, and arsenene may perform it well. Moreover, the G-series nerve agents might be efficiently monitored by the bismuthene. So far, there is still challenge on the material preparation due to the instability of these 2D materials under atmosphere. The synthesis or growth of materials integrated with the technique of surface protection should be associated with the device fabrication to establish a complete process for particular application. This review provides a complete and methodical guideline for scientists to further research and develop the hazardous gas sensors of these 2D materials in order to achieve the purpose of environmental protection.

Effects of the Structure and Temperature on the Nature of Excitons in the Mo0.6W0.4S2 Alloy

We studied the nature of excitons in the transition metal dichalcogenide alloy Mo_0.6W_0.4S₂ compared to pure MoS₂ and WS₂ grown by atomic layer deposition (ALD). For this, optical absorption/transmission spectroscopy and time-dependent density functional theory (TDDFT) were used. The effects of temperature on A and B exciton peak energies and line widths in optical transmission spectra were compared between the alloy and pure MoS₂ and WS₂. On increasing the temperature from 25 to 293 K, the energy of the A and B exciton peaks decreases, while their line width increases due to exciton-phonon interactions. The exciton-phonon interactions in the alloy are closer to those for MoS₂ than those for WS₂. This suggests that exciton wave functions in the alloy have a larger amplitude on Mo atoms than that on W atoms. The experimental absorption spectra could be reproduced by TDDFT calculations. Interestingly, for the alloy, the Mo and W atoms had to be distributed over all layers. Conversely, we could not reproduce the experimental alloy spectrum by calculations on a structure with alternating layers, in which every other layer contains only Mo atoms and the layers in between also contain W atoms. For the latter atomic arrangement, the TDDFT calculations yielded an additional optical absorption peak that could be due to excitons with some charge transfer character. From these results, we conclude that ALD yields an alloy in which Mo and W atoms are distributed uniformly among all layers.

Halide Perovskite Nanocrystal-Enabled Stabilization of Transition Metal Dichalcogenide Nanosheets

Transition metal dichalcogenide (TMD) nanosheets exfoliated in the liquid phase are of significant interest owing to their potential for scalable and flexible photoelectronic applications. Although various dispersants such as surfactants, oligomers, and polymers are used to obtain highly exfoliated TMD nanosheets, most of them are electrically insulating and need to be removed; otherwise, the photoelectric properties of the TMD nanosheets degrade. Here, inorganic halide perovskite nanocrystals (NCs) of CsPbX₃  (X = Cl, Br, or I) are presented as non-destructive dispersants capable of dispersing TMD nanosheets in the liquid phase and enhancing the photodetection properties of the nanosheets, thus eliminating the need to remove the dispersant. MoSe₂ nanosheets dispersed in the liquid phase are adsorbed with CsPbCl₃  NCs. The CsPbCl₃ nanocrystals on MoSe₂ efficiently withdraw electrons from the nanosheets, and suppress the dark current of the MoSe₂ nanosheets, leading to flexible near-infrared MoSe₂  photodetectors with a high ON/OFF photocurrent ratio and detectivity. Moreover, lanthanide ion-doped CsPbCl₃  NCs enhance the ON/OFF current ratio to >10⁶ . Meanwhile, the dispersion stability of the MoSe₂  nanosheets exfoliated with the perovskite NCs is sufficiently high.

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.

Boosting the Optoelectronic Properties of Molybdenum Diselenide by Combining Phase Transition Engineering with Organic Cationic Dye Doping

Two-dimensional layered transition metal dichalcogenides (TMDs) have been investigated intensively as next-generation semiconducting materials. However, conventional TMD-based devices exhibit large contact resistance at the interface between the TMD and the metal electrode because of Fermi level pinning and the Schottky barrier, which results in poor charge injection. Here, we present enhanced charge transport characteristics in molybdenum diselenide (MoSe₂) by means of a sequential engineering process called PESOD-2H/1T (i.e., phase transition engineering combined with surface transfer organic cationic dye doping; 2H and 1T represent the trigonal prismatic and octahedral phases, respectively). Substantial improvements are observed in PESOD-processed MoSe₂ phototransistors, specifically, an approximately 40 000-fold increase in effective carrier mobility and a 100 000-fold increase in photoresponsivity, compared with the mobility and photoresponsivity of intact MoSe₂ phototransistors. Moreover, the PESOD-processed MoSe₂ phototransistor on a flexible substrate maintains its optoelectronic properties under tensile stress, with a bending radius of 5 mm.

Laser-assisted micropyramid patterned PDMS encapsulation of 1D tellurium nanowires on cellulose paper for highly sensitive strain sensor and its photodetection studies

This work demonstrates the fabrication of tellurium-nanowires (Te-NWs)/paper based device encapsulated using laser assisted mircopyramid patterned polydimethylsiloxane (PDMS) films. Although there are multiple reports published on 1D Te, most of them are limited to establishing its properties and studying its behavior as a sensor and research on the utilization of Te-NWs for physical sensors remain unexplored. Further, reports on p-type photodetectors also remain scarce. The fabricated Te-NWs/paper with micropyramid structured PDMS films encapsulation was used as a strain sensor, and it exhibited considerable improvement (∼60%) in sensitivity compared to smooth PDMS films. The gauge factor of the developed strain sensor was found to be ∼15.3. In addition, fabricated Te-NWs/paper device with contacts was used as a photodetector and it showed photoresponsivity of ∼22.5 mA W^-1and ∼14.5 mA W^-1in visible and NIR regions, respectively. Furthermore, the device exhibited long-term mechanical stability under harsh deformations. Fabricated 1D Te-NWs/paper device was utilized as a strain sensor to monitor the angular movements in the human body and successfully monitored various human motions, including wrist bending, finger knuckle, elbow joint, and knee joint. The successful demonstration of Te-NWs based physical sensors and utilization in broadband photodetectors opens avenues of research for tellurium based flexible and wearable devices.

Enhanced Valley Polarization of Bilayer MoSe2 with Variable Stacking Order and Interlayer Coupling

In two-dimensional transitional metal dichalcogenides, tuning the spin-valley-layer coupling via changing layer numbers and stacking orders remains desirable for their application in valleytronics. Herein, six-point star-like MoSe₂ nanoflakes simultaneously containing different atom registration regions from monolayer to bilayer with 2H and 3R stacking order were fabricated, and the valley polarizations were comparably investigated by circular polarized photoluminescent spectroscopy. The degree of valley polarization was detected to be about 12.5% in the monolayer and 10% in the 2H bilayer, but greatly upgraded to about 40% in the 3R bilayer MoSe₂. This enhancement was attributed to the multiband spin splitting and generation of spin-dependent layer polarization for the 3R MoSe₂ bilayer, which is well evidenced by our ab initio calculations of the energy band structures. Our results demonstrate that preparing TMD crystals with controllable stacking orders and interlayer coupling is a promising route to tune the valley index in TMDs for developing valleytronics technology.

Atomically precise graphene nanoribbons: interplay of structural and electronic properties

Graphene nanoribbons hold great promise for future applications in nanoelectronic devices, as they may combine the excellent electronic properties of graphene with the opening of an electronic band gap - not present in graphene but required for transistor applications. With a two-step on-surface synthesis process, graphene nanoribbons can be fabricated with atomic precision, allowing precise control over width and edge structure. Meanwhile, a decade of research has resulted in a plethora of graphene nanoribbons having various structural and electronic properties. This article reviews not only the on-surface synthesis of atomically precise graphene nanoribbons but also how their electronic properties are ultimately linked to their structure. Current knowledge and considerations with respect to precursor design, which eventually determines the final (electronic) structure, are summarized. Special attention is dedicated to the electronic properties of graphene nanoribbons, also in dependence on their width and edge structure. It is exactly this possibility of precisely changing their properties by fine-tuning the precursor design - offering tunability over a wide range - which has generated this vast research interest, also in view of future applications. Thus, selected device prototypes are presented as well.

Synthesis of large-area monolayer and few-layer MoSe2 continuous films by chemical vapor deposition without hydrogen assistance and formation mechanism

Two dimensional (2D) MoSe2 with a layered structure has attracted extensive research due to its excellent electronic and optical properties. The controlled synthesis of large-scale and high-quality MoSe2 is highly desirable but still remains challenging. Ambient pressure chemical vapor deposition (APCVD) is an excellent method for the synthesis of 2D materials but the inevitable use of hydrogen during the growth and the easy formation of cracks in the ultrathin films still need to be solved. In the present work, we reported the synthesis of large-area continuous MoSe2 films with different layers by the APCVD method without the assistance of hydrogen on SiO2/Si substrates just by raising the reaction temperature of Se. The synthesized continuous MoSe2 films can reach several centimeters, which can be seen clearly by naked eyes, and, more importantly, the size of the monolayer film can reach up to 3 mm. The morphology, structural characteristics, and optical properties of the synthesized MoSe2 films have been investigated, demonstrating good performance and high crystallinity of the films. Raman spectra give the empirical expression of the frequency difference between E2g1 and A1g dependence of the layer number (N = 1-10 L) for CVD grown MoSe2, which is useful in layer number identification. Further, the formation mechanism of the MoSe2 continuous film is of interest as a fundamental scientific problem and needs to be studied. We proposed the wing model, boundary layer theory, and diffusion theory to account quantitatively for the formation behavior of the MoSe2 film. The presented facile growth method and theoretical model are useful to synthesize other ultrathin transition metal dichalcogenide films and understand the formation behaviors of the systems.

Visible light photocatalytic properties of one-step SnO2-templated grown SnO2/SnS2heterostructure and SnS2nanoflakes

The nanoflakes of SnS₂/SnO₂heterostructure and SnS₂were synthesized by a one-step SnO₂-templated chemical vapor deposition method. The metal oxide-assisted growth mechanism of SnS₂/SnO₂heterostructure and SnS₂nanoflakes were realized through investigating serial microstructures of products with varied growth time. Furthermore, the photocatalytic activity for MB dyes degradation of varied growth time products was used to explore the effect of product microstructure under the visible light irradiation. The SnO₂/SnS₂heterostructure and the oxide vacancies of nanoflakes demonstrated an improved visible light photocatalytic performance for MB degradation, which was around twice of the pure SnS₂nanoflakes and better than P25. The results of different scavengers on the degradation efficiency for MB indicate the·O₂^-, and ·OH are the main active species in the photodegradation reaction. The one-step growth mechanism of SnS₂/SnO₂could prove a facile process to grow metal oxide-metal sulfide heterostructure.

Promoting a Weak Coupling of Monolayer MoSe2 Grown on (100)-Faceted Au Foil

As a two-dimensional semiconductor with many physical properties, including, notably, layer-controlled electronic bandgap and coupled spin-valley degree of freedom, monolayer MoSe₂ is a strong candidate material for next-generation opto- and valley-electronic devices. However, due to substrate effects such as lattice mismatch and dielectric screening, preserving the monolayer's intrinsic properties remains challenging. This issue is generally significant for metallic substrates whose active surfaces are commonly utilized to achieve direct chemical or physical vapor growth of the monolayer films. Here, we demonstrate high-temperature-annealed Au foil with well-defined (100) facets as a weakly interacting substrate for atmospheric pressure chemical vapor deposition of highly crystalline monolayer MoSe₂. Low-temperature scanning tunneling microscopy/spectroscopy measurements reveal a honeycomb structure of MoSe₂ with a quasi-particle bandgap of 1.96 eV, a value comparable with other weakly interacting systems such as MoSe₂/graphite. Density functional theory calculations indicate that the Au(100) surface exhibits the preferred energetics to electronically decouple from MoSe₂, compared with the (110) and (111) crystal planes. This weak coupling is critical for the easy transfer of monolayers to another host substrate. Our study demonstrates a practical means to produce high-quality monolayers of transition-metal dichalcogenides, viable for both fundamental and application studies.

Rhenium Doping of Layered Transition-Metal Diselenides Triggers Enhancement of Photoelectrochemical Activity

The ever decreasing sources of fossil fuels have launched extensive research of alternative materials that might play a key role in their replacement. Therefore, the scientific community continuously investigates the possibilities of maximizing the working capacity of such materials in order to fulfill energy challenges in the near future. In this context, doping of the semiconducting materials is a versatile strategy to trigger their physicochemical properties as well their electrochemical performance. Herein, the impact of rhenium doping toward photoelectrochemical activity of MoSe₂ and WSe₂ was studied. Our results indicate that rhenium as a dopant contributes to better overall electrochemical performance, that is, an easier electron transfer of these materials compared to pristine compounds. Additionally, the photoelectrochemical measurements revealed that the doping with rhenium generated an enhancement of the photocurrent response of MoSe₂ as well as WSe₂ under UV light illumination.