1
|
Choi GS, Park S, An ES, Bae J, Shin I, Kang BT, Won CJ, Cheong SW, Lee HW, Lee GH, Cho WJ, Kim JS. Highly Efficient Room-Temperature Spin-Orbit-Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400893. [PMID: 38520060 DOI: 10.1002/advs.202400893] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Indexed: 03/25/2024]
Abstract
All-Van der Waals (vdW)-material-based heterostructures with atomically sharp interfaces offer a versatile platform for high-performing spintronic functionalities at room temperature. One of the key components is vdW topological insulators (TIs), which can produce a strong spin-orbit-torque (SOT) through the spin-momentum locking of their topological surface state (TSS). However, the relatively low conductance of the TSS introduces a current leakage problem through the bulk states of the TI or the adjacent ferromagnetic metal layers, reducing the interfacial charge-to-spin conversion efficiency (qICS). Here, a vdW heterostructure is used consisting of atomically-thin layers of a bulk-insulating TI Sn-doped Bi1.1Sb0.9Te2S1 and a room-temperature ferromagnet Fe3GaTe2, to enhance the relative current ratio on the TSS up to ≈20%. The resulting qICS reaches ≈1.65 nm-1 and the critical current density Jc ≈0.9 × 106 Acm-2 at 300 K, surpassing the performance of TI-based and heavy-metal-based SOT devices. These findings demonstrate that an all-vdW heterostructure with thickness optimization offers a promising platform for efficient current-controlled magnetization switching at room temperature.
Collapse
Affiliation(s)
- Gyu Seung Choi
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
| | - Sungyu Park
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Eun-Su An
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
| | - Juhong Bae
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Inseob Shin
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Beom Tak Kang
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
| | - Choong Jae Won
- Center for Complex Phase of Materials, Max Planck POSTECH/Korea Research Initiative, Pohang, 37673, Republic of Korea
- Laboratory for Pohang Emergent Materials, Department of Physics, POSTECH, Pohang, 37673, Republic of Korea
| | - Sang-Wook Cheong
- Center for Complex Phase of Materials, Max Planck POSTECH/Korea Research Initiative, Pohang, 37673, Republic of Korea
- Laboratory for Pohang Emergent Materials, Department of Physics, POSTECH, Pohang, 37673, Republic of Korea
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854, USA
| | - Hyun-Woo Lee
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Gil-Ho Lee
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Won Joon Cho
- Device Research Center, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., Ltd, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Republic of Korea
| | - Jun Sung Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
| |
Collapse
|
2
|
Wu W, Liu M, Zhou J, Li J, Zhang Y, Xu F, Li X, Wu Y, Wu Z, Kang J. Chirality-Dependent Valley Polarization in Magnetic van der Waals Heterostructures via Spin-Selective Charge Transfer. NANO LETTERS 2024; 24:6225-6232. [PMID: 38752702 DOI: 10.1021/acs.nanolett.4c00503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Magnetic proximity interaction provides a promising route to manipulate the spin and valley degrees of freedom in van der Waals heterostructures. Here, we report a control of valley pseudospin in the WS2/MoSe2 heterostructure by utilizing the magnetic proximity effect of few-layered CrBr3 and, for the first time, observe a substantial difference in valley polarization of intra/interlayer excitons under different circularly polarized laser excitations, referred to as chirality-dependent valley polarization. Theoretical and experimental results reveal that the spin-selective charge transfer between MoSe2 and CrBr3, as well as between MoSe2 and WS2, is mostly responsible for the chiral feature of valley polarization in comparison with the proximity exchange field. This means that a long-distance manipulation of exciton behaviors in multilayer heterostructures can be achieved through spin-selective charge transfer. This work marks a significant advancement in the control of spin and valley pseudospin in multilayer structures.
Collapse
Affiliation(s)
- Wei Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Mengyu Liu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Jiangpeng Zhou
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Jin'an Li
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yuxiang Zhang
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Feiya Xu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Xu Li
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yaping Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Zhiming Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Junyong Kang
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| |
Collapse
|
3
|
Wu Y, Zhang D, Zhang YN, Deng L, Peng B. Nonreciprocal and Nonvolatile Electric-Field Switching of Magnetism in van der Waals Heterostructure Multiferroics. NANO LETTERS 2024; 24:5929-5936. [PMID: 38655909 DOI: 10.1021/acs.nanolett.3c03970] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which have been diligently sought after for a long time. Construction of two-dimensional (2D) vdW multiferroics is a more exciting endeavor. To date, the nonvolatile manipulation of magnetism through ferroelectric polarization still remains challenging in a 2D vdW heterostructure multiferroic. Here, we report a van der Waals (vdW) heterostructure multiferroic comprising the atomically thin layered antiferromagnet (AFM) CrI3 and ferroelectric (FE) α-In2Se3. We demonstrate anomalously nonreciprocal and nonvolatile electric-field control of magnetization by ferroelectric polarization. The nonreciprocal electric control originates from an intriguing antisymmetric enhancement of interlayer ferromagnetic coupling in the opposite ferroelectric polarization configurations of α-In2Se3. Our work provides numerous possibilities for creating diverse heterostructure multiferroics at the limit of a few atomic layers for multistage magnetic memories and brain-inspired in-memory computing.
Collapse
Affiliation(s)
- Yangliu Wu
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Deju Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Yan-Ning Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Longjiang Deng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Bo Peng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| |
Collapse
|
4
|
Wu Q, Wang J, Zhi T, Zhuang Y, Tao Z, Shao P, Cai Q, Yang G, Xue J, Chen D, Zhang R. Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures. NANOTECHNOLOGY 2024; 35:305204. [PMID: 38604152 DOI: 10.1088/1361-6528/ad3d64] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2024] [Accepted: 04/09/2024] [Indexed: 04/13/2024]
Abstract
The pursuit of van der Waals (vdW) heterostructures with high Curie temperature and strong perpendicular magnetic anisotropy (PMA) is vital to the advancement of next generation spintronic devices. First-principles calculations are used to study the electronic structures and magnetic characteristics of GaN/VS2vdW heterostructure under biaxial strain and electrostatic doping. Our findings show that a ferromagnetic ground state with a remarkable Curie temperature (477 K), much above room temperature, exists in GaN/VS2vdW heterostructure and 100% spin polarization efficiency. Additionally, GaN/VS2vdW heterostructure still maintains PMA under biaxial strain, which is indispensable for high-density information storage. We further explore the electron, magnetic, and transport properties of VS2/GaN/VS2vdW sandwich heterostructure, where the magnetoresistivity can reach as high as 40%. Our research indicates that the heterostructure constructed by combining the ferromagnet VS2and the non-magnetic semiconductor GaN is a promising material for vdW spin valve devices at room temperature.
Collapse
Affiliation(s)
- Qianqian Wu
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Jin Wang
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Ting Zhi
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Yanling Zhuang
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Zhikuo Tao
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Pengfei Shao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| | - Qing Cai
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| | - Guofeng Yang
- School of Science, Jiangnan University, Wuxi, 214122, People's Republic of China
| | - Junjun Xue
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Dunjun Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| | - Rong Zhang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| |
Collapse
|
5
|
Jia K, Dong XJ, Li SS, Ji WX, Zhang CW. Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN 4. NANOSCALE 2024; 16:8639-8649. [PMID: 38618905 DOI: 10.1039/d3nr05643k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
It is both conceptually and practically fascinating to explore fundamental research studies and practical applications of two-dimensional systems with the tunable abundant valley Hall effect. In this work, based on first-principles calculations, the tunable abundant valley Hall effect is proved to appear in Janus monolayer VCGeN4. When the magnetization is along the out-of-plane direction, VCGeN4 is an intrinsic ferromagnetic semiconductor with a valley feature. The intriguing spontaneous valley polarization exists in VCGeN4 due to the common influence of broken inversion and time-reversal symmetries, which makes it easier to realize the anomalous valley Hall effect. Furthermore, we observe that the valley-non-equilibrium quantum anomalous Hall effect is driven by external strain, which is located between two half-valley-metal states. When reversing the magnetization, the spin flipping makes the position of the edge state to change from one valley to another valley, demonstrating an intriguing behavior known as chiral spin-valley locking. Although the easy magnetic axis orientation is along the in-plane direction, we can utilize an external magnetic field to transform the magnetic axis orientation. Moreover, it is found that the valley state, electronic and magnetic properties can be well regulated by the electric field. Our works explore the mechanism of the tunable abundant valley Hall effect by applying an external strain and electric field, which provides a perfect platform to investigate the spin, valley, and topology.
Collapse
Affiliation(s)
- Kang Jia
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China
| | - Xiao-Jing Dong
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China
| | - Sheng-Shi Li
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
| | - Wei-Xiao Ji
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
| | - Chang-Wen Zhang
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China
| |
Collapse
|
6
|
Zhou X, Jiang T, Tao Y, Ji Y, Wang J, Lai T, Zhong D. Evidence of Ferromagnetism and Ultrafast Dynamics of Demagnetization in an Epitaxial FeCl 2 Monolayer. ACS NANO 2024; 18:10912-10920. [PMID: 38613502 DOI: 10.1021/acsnano.4c01436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/15/2024]
Abstract
The development of two-dimensional (2D) magnetism is driven not only by the interest of low-dimensional physics but also by potential applications in high-density miniaturized spintronic devices. However, 2D materials possessing a ferromagnetic order with a relatively high Curie temperature (Tc) are rare. In this paper, the evidence of ferromagnetism in monolayer FeCl2 on Au(111) surfaces, as well as the interlayer antiferromagnetic coupling of bilayer FeCl2, is characterized by using spin-polarized scanning tunneling microscopy. A Curie temperature (Tc) of ∼147 K is revealed for monolayer FeCl2, based on our static magneto-optical Kerr effect measurements. Furthermore, temperature-dependent magnetization dynamics is investigated by the time-resolved magneto-optical Kerr effect. A transition from one- to two-step demagnetization occurs as the lattice temperature approaches Tc, which supports the Elliott-Yafet spin relaxation mechanism. The findings contribute to a deeper understanding of the underlying mechanisms governing ultrafast magnetization in 2D ferromagnetic materials.
Collapse
Affiliation(s)
- Xuhan Zhou
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Guangzhou No. 89 Secondary School, Guangzhou 510520, China
| | - Tianran Jiang
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Ye Tao
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Yi Ji
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Jingying Wang
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Tianshu Lai
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Dingyong Zhong
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| |
Collapse
|
7
|
Li J, Chen Z, Zhou J, Zhang Y, Li X, Wu Z, Wu Y, Kang J. Phase-Dependent Magnetic Proximity Modulations on Valley Polarization and Splitting. ACS NANO 2024; 18:10921-10929. [PMID: 38608131 DOI: 10.1021/acsnano.4c01526] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2024]
Abstract
Proximate-induced magnetic interactions present a promising strategy for precise manipulation of valley degrees of freedom. Taking advantage of the splendid valleytronic platform of transition metal dichalcogenides, magnetic two-dimensional VSe2 with different phases are introduced to intervene in the spin of electrons and modulate their valleytronic properties. When constructing the heterostructures, 1T-VSe2/WX2 (X = S and Se) showcases significant improvement in the valley polarizations at room temperature, while 2H-VSe2/WX2 exhibits superior performance at low temperatures and demonstrates heightened sensitivity to the external magnetic field. Simultaneously, considerable valley splitting with a large geff factor up to -29.0 is observed in 2H-VSe2/WS2, while it is negligible in 1T-VSe2/WX2. First-principles calculations reveal a phase-dependent magnetic proximity mechanism on the valleytronic modulations, which is dominated by interfacial charge transfer in 1T-VSe2/WX2 and the proximity exchange field in 2H-VSe2/WX2 heterostructures. The effective control over valley degrees of freedom will bridge the valleytronic physics and devices, rendering enormous potential in the field of valley quantum applications.
Collapse
Affiliation(s)
- Jin'an Li
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Zilong Chen
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Jiangpeng Zhou
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yiteng Zhang
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Xu Li
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Zhiming Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yaping Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Junyong Kang
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| |
Collapse
|
8
|
Cao Z, Zhu L, Yao K. Low-Power Transistors with Ideal p-type Ohmic Contacts Based on VS 2/WSe 2 van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19158-19166. [PMID: 38572998 DOI: 10.1021/acsami.4c00640] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Abstract
Achieving low-resistance Ohmic contacts with a vanishing Schottky barrier is crucial for enhancing the performance of two-dimensional (2D) field-effect transistors (FETs). In this paper, we present a theoretical investigation of VS2/WSe2-vdWHs-FETs with a gate length (Lg) in the range of 1-5 nm, using ab initio quantum transport simulations. The results show that a very low hole Schottky barrier height (-0.01 eV) can be achieved with perfect band offsets and reduced metal-induced gap states (MIGS), indicating the formation of p-type Ohmic contacts. Additionally, these FETs also exhibit an impressive low subthreshold swing (SS) (69 mV/dec) and high Ion/Ioff (>107) with an appropriate underlap (UL) structure consisting of pristine WSe2. Furthermore, even when the Lg is scaled down to 3 nm, the device can still meet the low-power (LP) requirements of the International Technology Roadmap for Semiconductors (ITRS) by controlling the UL. Consequently, this study provides valuable insights for the future development of LP 2D FETs.
Collapse
Affiliation(s)
- Zenglin Cao
- School of Physics and Wuhan National High Magnetic field center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Lin Zhu
- School of Physics and Wuhan National High Magnetic field center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Kailun Yao
- School of Physics and Wuhan National High Magnetic field center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| |
Collapse
|
9
|
Wang J, Huang C, Xing Y, Shao X. Facet-Dependent Interfacial Charge Transfer between T-Phase VS 2 Nanoflakes and Rutile TiO 2 Single Crystals. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38621278 DOI: 10.1021/acsami.4c01437] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
The hybridizations of two-dimensional (2D) metallic materials with semiconducting transition metal oxides (TMOs) register attractive heterojunctions, which can find various applications in photostimulated circumstances. In this work, we developed an ambient-pressure chemical vapor deposition method to directly grow T-VS2 on atomically smooth rutile TiO2 single crystals with different terminations and thus successfully constructed a heterojunction model of VS2/TiO2 with a well-defined clean interface. Detailed measurements with Kelvin probe force microscopy revealed the facet-dependent charge transfer occurring at the VS2/TiO2 interfaces, seeing variations not only in the amount and direction of the transferred electrons but also in the photoinduced surface potential changes and the dynamics of photogenerated charge carriers under ultraviolet irradiation. Interestingly, ultrathin T-VS2 was found with considerable magnetism at room temperature, disregarding the charge exchange with the TiO2 substrates. These results may bring deep insights into the photoinspired functionalities of the hybridized system combining metallic transition metal dichalcogenides and TMO materials.
Collapse
Affiliation(s)
- Jingjing Wang
- Department of Chemical Physics, Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Chenxi Huang
- Department of Chemical Physics, Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yue Xing
- Department of Chemical Physics, Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiang Shao
- Department of Chemical Physics, Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
| |
Collapse
|
10
|
Carey B, Wessling NK, Steeger P, Schmidt R, Michaelis de Vasconcellos S, Bratschitsch R, Arora A. Giant Faraday rotation in atomically thin semiconductors. Nat Commun 2024; 15:3082. [PMID: 38600090 PMCID: PMC11006678 DOI: 10.1038/s41467-024-47294-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/20/2023] [Accepted: 03/21/2024] [Indexed: 04/12/2024] Open
Abstract
Faraday rotation is a fundamental effect in the magneto-optical response of solids, liquids and gases. Materials with a large Verdet constant find applications in optical modulators, sensors and non-reciprocal devices, such as optical isolators. Here, we demonstrate that the plane of polarization of light exhibits a giant Faraday rotation of several degrees around the A exciton transition in hBN-encapsulated monolayers of WSe2 and MoSe2 under moderate magnetic fields. This results in the highest known Verdet constant of -1.9 × 107 deg T-1 cm-1 for any material in the visible regime. Additionally, interlayer excitons in hBN-encapsulated bilayer MoS2 exhibit a large Verdet constant (VIL ≈ +2 × 105 deg T-1 cm-2) of opposite sign compared to A excitons in monolayers. The giant Faraday rotation is due to the giant oscillator strength and high g-factor of the excitons in atomically thin semiconducting transition metal dichalcogenides. We deduce the complete in-plane complex dielectric tensor of hBN-encapsulated WSe2 and MoSe2 monolayers, which is vital for the prediction of Kerr, Faraday and magneto-circular dichroism spectra of 2D heterostructures. Our results pose a crucial advance in the potential usage of two-dimensional materials in ultrathin optical polarization devices.
Collapse
Affiliation(s)
- Benjamin Carey
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, Münster, Germany
- School of Mathematics and Physics, The University of Queensland, St Lucia, QLD, Australia
| | - Nils Kolja Wessling
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, Münster, Germany
- Institute of Photonics, Department of Physics, University of Strathclyde, 99 George Street, Glasgow, UK
| | - Paul Steeger
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, Münster, Germany
| | - Robert Schmidt
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, Münster, Germany
| | | | - Rudolf Bratschitsch
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, Münster, Germany.
| | - Ashish Arora
- Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, Münster, Germany.
- Department of Physics, Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, Pune, Maharashtra, India.
| |
Collapse
|
11
|
Chen P, Peng B, Liu Z, Liu J, Li D, Li Z, Xu X, Wang H, Zhou X, Zhai T. Room-Temperature Magnetic-Induced Circularly Polarized Photoluminescence in Two-Dimensional Er 2O 2S. J Am Chem Soc 2024; 146:6053-6060. [PMID: 38404063 DOI: 10.1021/jacs.3c13267] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/27/2024]
Abstract
Two-dimensional (2D) materials with spin polarization have great potential for achieving next-generation spintronic applications. However, spin polarization of 2D materials is usually produced at a cryogenic temperature because of thermal fluctuations, which severely hinder their further applications. Here, we report room-temperature intrinsic magnetic-induced circularly polarized photoluminescence (PL) in 2D Er2O2S flakes. The geff factor of 2D Er2O2S stays at around -6.3 from the liquid He temperature limit to room temperature, which is independent of temperature. This anomalous phenomenon in Er2O2S is totally different from previous materials, which all have a decreasing Zeeman splitting with increasing temperature resulting from thermal fluctuations. The anomalous temperature-dependent magnetic-induced circularly polarized PL originates from the weak electron-phonon coupling in 2D Er2O2S, which has been proven by both the temperature-dependent Raman and theoretical calculations. This work sheds light on the understanding and manipulation of 2D materials for practical spintronic applications.
Collapse
Affiliation(s)
- Ping Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Bo Peng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China
| | - Zhen Liu
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China
| | - Jie Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Xiang Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| |
Collapse
|
12
|
Zhao Z, Zhang T, Yue S, Wang P, Bao Y, Zhan S. Spin Polarization: A New Frontier in Efficient Photocatalysis for Environmental Purification and Energy Conversion. Chemphyschem 2024; 25:e202300726. [PMID: 38059760 DOI: 10.1002/cphc.202300726] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Revised: 11/28/2023] [Accepted: 12/01/2023] [Indexed: 12/08/2023]
Abstract
As a promising strategy to improve photocatalytic efficiency, spin polarization has attracted enormous attention in recent years, which could be involved in various steps of photoreaction. The Pauli repulsion principle and the spin selection rule dictate that the behavior of two electrons in a spatial eigenstate is based on their spin states, and this fact opens up a new avenue for manipulating photocatalytic efficiency. In this review, recent advances in modulating the photocatalytic activity with spin polarization are systematically summarized. Fundamental insights into the influence of spin-polarization effects on photon absorption, carrier separation, and migration, and the behaviors of reaction-related substances from the photon uptake to reactant desorption are highlighted and discussed in detail, and various photocatalytic applications for environmental purification and energy conversion are presented. This review is expected to deliver a timely overview of the recent developments in spin-polarization-modulated photocatalysis for environmental purification and energy conversion in terms of their practical applications.
Collapse
Affiliation(s)
- Zhiyong Zhao
- MOE Key Laboratory of Pollution Processes and Environmental Criteria, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Tao Zhang
- MOE Key Laboratory of Pollution Processes and Environmental Criteria, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Shuai Yue
- MOE Key Laboratory of Pollution Processes and Environmental Criteria, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Pengfei Wang
- MOE Key Laboratory of Pollution Processes and Environmental Criteria, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Yueping Bao
- MOE Key Laboratory of Pollution Processes and Environmental Criteria, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Sihui Zhan
- MOE Key Laboratory of Pollution Processes and Environmental Criteria, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| |
Collapse
|
13
|
Wu C, Sun S, Gong W, Li J, Wang X. Nonvolatile switchable half-metallicity and magnetism in the MXene Hf 2MnC 2O 2/Sc 2CO 2 multiferroic heterostructure. Phys Chem Chem Phys 2024; 26:5323-5332. [PMID: 38268467 DOI: 10.1039/d3cp04847k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Nonvolatile electrical control of two-dimensional (2D) van der Waals (vdW) magnetism is important for spintronic devices. Here, using first-principles calculations, we systematically investigated the magnetic properties of the MXene Hf2MnC2O2 combined with the ferroelectric MXene Sc2CO2. When flipping the electric polarization of Sc2CO2, a transition between a semiconductor and a half-metal occurs in the Hf2MnC2O2 monolayer. Moreover, the ferromagnetic exchange parameter J1 can be enhanced to 9.67 meV under polarized P↑ of Sc2CO2, much larger than those of the pristine Hf2MnC2O2 monolayer and Hf2MnC2O2/Sc2CO2-P↓. In addition, the easy magnetization axis of the Hf2MnC2O2 monolayer is also dependent on the polarization orientation of Sc2CO2. Our results indicate a multiferroic heterostructure based on MXenes, offering an effective way for obtaining nonvolatile electrical control of electronic and magnetic properties.
Collapse
Affiliation(s)
- Changwei Wu
- Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, Guangdong, P. R. China.
- School of Electronic Information and Electrical Engineering, Huizhou University, Huizhou 516001, Guangdong, P. R. China
| | - Shanwei Sun
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
| | - Weiping Gong
- Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, Guangdong, P. R. China.
- School of Electronic Information and Electrical Engineering, Huizhou University, Huizhou 516001, Guangdong, P. R. China
| | - Jiangyu Li
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
| |
Collapse
|
14
|
Ortiz Jimenez V, Pham YTH, Zhou D, Liu M, Nugera FA, Kalappattil V, Eggers T, Hoang K, Duong DL, Terrones M, Rodriguez Gutiérrez H, Phan M. Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2304792. [PMID: 38072638 PMCID: PMC10870067 DOI: 10.1002/advs.202304792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 11/04/2023] [Indexed: 02/17/2024]
Abstract
The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.
Collapse
Affiliation(s)
- Valery Ortiz Jimenez
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
- Nanoscale Device Characterization DivisionNational Institute of Standards and TechnologyGaithersburgMD20899USA
| | | | - Da Zhou
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Mingzu Liu
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | | | - Tatiana Eggers
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
| | - Khang Hoang
- Center for Computationally Assisted Science and Technology and Department of PhysicsNorth Dakota State UniversityFargoND58108USA
| | - Dinh Loc Duong
- Department of PhysicsMontana State UniversityBozemanMT59717USA
| | - Mauricio Terrones
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | - Manh‐Huong Phan
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
| |
Collapse
|
15
|
Tiwari S, Van de Put M, Sorée B, Hinkle C, Vandenberghe WG. Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn-, V-, and Fe-Doped WSe 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:4991-4998. [PMID: 38235733 DOI: 10.1021/acsami.3c14114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2024]
Abstract
Using Hubbard-U-corrected density functional theory calculations, lattice Monte Carlo simulations, and spin Monte Carlo simulations, we investigate the impact of dopant clustering on the magnetic properties of WSe2 doped with period four transition metals. We use manganese (Mn) and iron (Fe) as candidate n-type dopants and vanadium (V) as the candidate p-type dopant, substituting the tungsten (W) atom in WSe2. Specifically, we determine the strength of the exchange interaction in Fe-, Mn-, and V-doped WSe2 in the presence of clustering. We show that the clusters of dopants are energetically more stable than discretely doped systems. Further, we show that in the presence of dopant clustering, the magnetic exchange interaction significantly reduces because the magnetic order in clustered WSe2 becomes more itinerant. Finally, we show that the clustering of the dopant atoms has a detrimental effect on the magnetic interaction, and to obtain an optimal Curie temperature, it is important to control the distribution of the dopant atoms.
Collapse
Affiliation(s)
- Sabyasachi Tiwari
- Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W Campbell Rd., Richardson, Texas 75080, United States
- Imec, Kapeldreef 75, 3001 Heverlee, Belgium
- Department of Materials Engineering, KU Leuven, Kasteelpark Arenberg 44, 3001 Leuven, Belgium
| | - Maarten Van de Put
- Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W Campbell Rd., Richardson, Texas 75080, United States
- Imec, Kapeldreef 75, 3001 Heverlee, Belgium
| | - Bart Sorée
- Imec, Kapeldreef 75, 3001 Heverlee, Belgium
- Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
- Department of Physics, Universiteit Antwerpen, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - Christopher Hinkle
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - William G Vandenberghe
- Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W Campbell Rd., Richardson, Texas 75080, United States
| |
Collapse
|
16
|
Liu H, Wu Y, Wu Z, Liu S, Zhang VL, Yu T. Coexisting Phases in Transition Metal Dichalcogenides: Overview, Synthesis, Applications, and Prospects. ACS NANO 2024; 18:2708-2729. [PMID: 38252696 DOI: 10.1021/acsnano.3c10665] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
Over the past decade, significant advancements have been made in phase engineering of two-dimensional transition metal dichalcogenides (TMDCs), thereby allowing controlled synthesis of various phases of TMDCs and facile conversion between them. Recently, there has been emerging interest in TMDC coexisting phases, which contain multiple phases within one nanostructured TMDC. By taking advantage of the merits from the component phases, the coexisting phases offer enhanced performance in many aspects compared with single-phase TMDCs. Herein, this review article thoroughly expounds the latest progress and ongoing efforts on the syntheses, properties, and applications of TMDC coexisting phases. The introduction section overviews the main phases of TMDCs (2H, 3R, 1T, 1T', 1Td), along with the advantages of phase coexistence. The subsequent section focuses on the synthesis methods for coexisting phases of TMDCs, with particular attention to local patterning and random formations. Furthermore, on the basis of the versatile properties of TMDC coexisting phases, their applications in magnetism, valleytronics, field-effect transistors, memristors, and catalysis are discussed. Lastly, a perspective is presented on the future development, challenges, and potential opportunities of TMDC coexisting phases. This review aims to provide insights into the phase engineering of 2D materials for both scientific and engineering communities and contribute to further advancements in this emerging field.
Collapse
Affiliation(s)
- Haiyang Liu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Yaping Wu
- School of Physics and Technology, Xiamen University, Xiamen 361005, China
| | - Zhiming Wu
- School of Physics and Technology, Xiamen University, Xiamen 361005, China
| | - Sheng Liu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| | - Vanessa Li Zhang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Ting Yu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| |
Collapse
|
17
|
Zhao GD, Fu W, Li Y, Liu X, Jia F, Hu T, Ren W. Hidden Valley Polarization, Piezoelectricity, and Dzyaloshinskii-Moriya Interactions of Janus Vanadium Dichalcogenides. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1268-1275. [PMID: 38113122 DOI: 10.1021/acsami.3c09270] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Due to the lack of inversion symmetry and the discovery of room-temperature ferromagnetism, two-dimensional semiconducting vanadium-based van der Waals transition-metal dichalcogenides (V-TMDs) are drawing attention for their possible application in spintronics and valleytronics. Here, we show the functional properties enriched by the broken inversion, out-of-plane mirror, and time-reversal symmetries of Janus H-VXY TMDs (X, Y = S, Se, Te). By first-principles calculations, we reveal the intrinsic xy easy-plane magnetism of the Janus vanadium-based TMD monolayers and systematically study their hidden valley polarization and giant magneto band structure. Their strong nearest-neighbor exchange strengths lead to near-room-temperature magnetic phase transitions. The Janus H-VXY system also exhibits piezoelectricity with nonzero e31 and e21. Interestingly, it is found that the right-handed Dzyaloshinskii-Moriya interaction has nonzero in-plane components in our Janus system, with fluctuating magnitudes determined by competence between relaxed bond-angle and atomic index of ligands.
Collapse
Affiliation(s)
- Guo-Dong Zhao
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Weida Fu
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Yongchang Li
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Xingen Liu
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
- School of Mathematical Information, Shaoxing University, Shaoxing 312000, China
| | - Fanhao Jia
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Tao Hu
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Wei Ren
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| |
Collapse
|
18
|
Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
Collapse
Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
19
|
Zhang H, Guo N, Wang Z, Xiao Y, Zhu X, Wang S, Yao X, Liu Y, Zhang X. Two-Dimensional Transition Metal Boride TMB 12 (TM = V, Cr, Mn, and Fe) Monolayers: Robust Antiferromagnetic Semiconductors with Large Magnetic Anisotropy. Molecules 2023; 28:7945. [PMID: 38138435 PMCID: PMC10745289 DOI: 10.3390/molecules28247945] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2023] [Revised: 11/14/2023] [Accepted: 11/19/2023] [Indexed: 12/24/2023] Open
Abstract
Currently, two-dimensional (2D) materials with intrinsic antiferromagnetism have stimulated research interest due to their insensitivity to external magnetic fields and absence of stray fields. Here, we predict a family of stable transition metal (TM) borides, TMB12 (TM = V, Cr, Mn, Fe) monolayers, by combining TM atoms and B12 icosahedra based on first-principles calculations. Our results show that the four TMB12 monolayers have stable antiferromagnetic (AFM) ground states with large magnetic anisotropic energy. Among them, three TMB12 (TM=V, Cr, Mn) monolayers display an in-plane easy magnetization axis, while the FeB12 monolayer has an out-of-plane easy magnetization axis. Among them, the CrB12 and the FeB12 monolayers are AFM semiconductors with band gaps of 0.13 eV and 0.35 eV, respectively. In particular, the AFM FeB12 monolayer is a spin-polarized AFM material with a Néel temperature of 125 K. Moreover, the electronic and magnetic properties of the CrB12 and the FeB12 monolayers can be modulated by imposing external biaxial strains. Our findings show that the TMB12 monolayers are candidates for designing 2D AFM materials, with potential applications in electronic devices.
Collapse
Affiliation(s)
- Huiqin Zhang
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, China
| | - Nini Guo
- College of Physics and Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China
| | - Ziyu Wang
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, China
| | - Yuqi Xiao
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, China
| | - Xiangfei Zhu
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, China
| | - Shu Wang
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, China
| | - Xiaojing Yao
- College of Physics and Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China
| | - Yongjun Liu
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, China
| | - Xiuyun Zhang
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, China
- Key Laboratory of Quantum Materials and Devices (Southeast University), Ministry of Education, Nanjing 200089, China
| |
Collapse
|
20
|
Ma X, Fan Y, Li W, Li Y, Liu X, Zhao X, Zhao M. Valley manipulation by sliding-induced tuning of the magnetic proximity effect in heterostructures. NANOSCALE 2023; 15:18678-18686. [PMID: 37933460 DOI: 10.1039/d3nr03086e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2023]
Abstract
Spontaneous valley polarization, resulting from the magnetic proximity effect, holds tremendous potential for information processing and storage. This effect is highly sensitive to the interfacial electronic properties, encompassing both charge transitions and spin configurations. In this study, we propose the manipulation of valley splitting by leveraging the tunable magnetic proximity effect through sliding an inversion-symmetric antiferromagnetic (AFM-I) monolayer within a TMD/AFM-I/TMD heterostructure. The presence of the antiferromagnetic monolayer enhances the robustness of the magnetic order during interlayer sliding. Notably, we demonstrate that the polarized stacking of the heterostructure enables the generation of intrinsic out-of-plane and in-plane electric polarization. Intriguingly, interlayer sliding not only reverses the out-of-plane and in-plane electric polarization but also alters the layer-resolved valley splitting, thereby contributing to the emergence of the anomalous valley Hall effect and the layer Hall effect. In addition, the manipulation of valleys remains consistent with both the valley optical selection rules and the intra/interlayer emission energy, which are contingent upon the interlayer sliding. The findings of this work hold promise for potential applications in the field of valleytronics.
Collapse
Affiliation(s)
- Xikui Ma
- Center for Optics Research and Engineering of Shandong University, Shandong University, Qingdao, 266237, China.
| | - Yingcai Fan
- School of Physics, Shandong University, Jinan, Shandong, 250100, China.
| | - Weifeng Li
- School of Physics, Shandong University, Jinan, Shandong, 250100, China.
| | - Yangyang Li
- School of Physics, Shandong University, Jinan, Shandong, 250100, China.
| | - Xiangdong Liu
- School of Physics, Shandong University, Jinan, Shandong, 250100, China.
| | - Xian Zhao
- Center for Optics Research and Engineering of Shandong University, Shandong University, Qingdao, 266237, China.
| | - Mingwen Zhao
- School of Physics, Shandong University, Jinan, Shandong, 250100, China.
| |
Collapse
|
21
|
Serati de Brito C, Faria Junior PE, Ghiasi TS, Ingla-Aynés J, Rabahi CR, Cavalini C, Dirnberger F, Mañas-Valero S, Watanabe K, Taniguchi T, Zollner K, Fabian J, Schüller C, van der Zant HSJ, Gobato YG. Charge Transfer and Asymmetric Coupling of MoSe 2 Valleys to the Magnetic Order of CrSBr. NANO LETTERS 2023. [PMID: 38019289 DOI: 10.1021/acs.nanolett.3c03431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in nonmagnetic TMDs. Here, we report magneto photoluminescence (PL) investigations of monolayer (ML) MoSe2 on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe2, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley g-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first-principles calculations suggest that MoSe2/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices.
Collapse
Affiliation(s)
- Caique Serati de Brito
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany
| | - Paulo E Faria Junior
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - Talieh S Ghiasi
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Josep Ingla-Aynés
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - César Ricardo Rabahi
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
| | - Camila Cavalini
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
| | - Florian Dirnberger
- Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität, 01069 Dresden, Germany
| | - Samuel Mañas-Valero
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna 46980, Spain
| | - Kenji Watanabe
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Klaus Zollner
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - Christian Schüller
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany
| | - Herre S J van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Yara Galvão Gobato
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
| |
Collapse
|
22
|
Gao Z, He Y, Xiong K. Two-dimensional Janus SVAN 2 (A = Si, Ge) monolayers with intrinsic semiconductor character and room temperature ferromagnetism: tunable electronic properties via strain and an electric field. Dalton Trans 2023; 52:17416-17425. [PMID: 37947052 DOI: 10.1039/d3dt03031h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
In the context of developing next-generation information technology, two-dimensional materials with inherent ferromagnetism, a Curie temperature above room temperature, and significant magnetic anisotropy hold great promise. In this work, we employed first-principles calculations to investigate a novel two-dimensional Janus structure, namely SVAN2 (A = Si, Ge). Our findings reveal that these structures are not only dynamically and thermally stable, but also exhibit semiconductor properties alongside their ferromagnetic states. The Janus SVSiN2 monolayer exhibits an in-plane easy axis, while the SVGeN2 monolayer shows an out-of-plane easy axis, both characterized by a significant magnetic anisotropy energy (129 and 172 μeV, respectively). Notably, through Monte Carlo simulation, we found that the Curie temperature of the SVSiN2 monolayer is 330 K, which is higher than room temperature. Finally, by applying biaxial strain and an external electric field, we successfully regulated the electronic properties of the SVAN2 (A = Si, Ge) monolayers, enabling a transition from semiconductor to half-metallic behavior. These remarkable electronic and magnetic properties make the Janus SVAN2 (A = Si, Ge) monolayers promising candidate materials for spin electron applications.
Collapse
Affiliation(s)
- Zhen Gao
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Yao He
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Kai Xiong
- Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| |
Collapse
|
23
|
Li X, Jones AC, Choi J, Zhao H, Chandrasekaran V, Pettes MT, Piryatinski A, Tschudin MA, Reiser P, Broadway DA, Maletinsky P, Sinitsyn N, Crooker SA, Htoon H. Proximity-induced chiral quantum light generation in strain-engineered WSe 2/NiPS 3 heterostructures. NATURE MATERIALS 2023; 22:1311-1316. [PMID: 37592028 DOI: 10.1038/s41563-023-01645-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Accepted: 07/18/2023] [Indexed: 08/19/2023]
Abstract
Quantum light emitters capable of generating single photons with circular polarization and non-classical statistics could enable non-reciprocal single-photon devices and deterministic spin-photon interfaces for quantum networks. To date, the emission of such chiral quantum light relies on the application of intense external magnetic fields, electrical/optical injection of spin-polarized carriers/excitons or coupling with complex photonic metastructures. Here we report the creation of free-space chiral quantum light emitters via the nanoindentation of monolayer WSe2/NiPS3 heterostructures at zero external magnetic field. These quantum light emitters emit with a high degree of circular polarization (0.89) and single-photon purity (95%), independent of pump laser polarization. Scanning diamond nitrogen-vacancy microscopy and temperature-dependent magneto-photoluminescence studies reveal that the chiral quantum light emission arises from magnetic proximity interactions between localized excitons in the WSe2 monolayer and the out-of-plane magnetization of defects in the antiferromagnetic order of NiPS3, both of which are co-localized by strain fields associated with the nanoscale indentations.
Collapse
Affiliation(s)
- Xiangzhi Li
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Andrew C Jones
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Junho Choi
- National High Magnetic Field Laboratory, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Huan Zhao
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Vigneshwaran Chandrasekaran
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Michael T Pettes
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Andrei Piryatinski
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | | | - Patrick Reiser
- Department of Physics, University of Basel, Basel, Switzerland
| | | | | | - Nikolai Sinitsyn
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Scott A Crooker
- National High Magnetic Field Laboratory, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Han Htoon
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA.
| |
Collapse
|
24
|
Pawbake A, Pelini T, Mohelsky I, Jana D, Breslavetz I, Cho CW, Orlita M, Potemski M, Measson MA, Wilson NP, Mosina K, Soll A, Sofer Z, Piot BA, Zhitomirsky ME, Faugeras C. Magneto-Optical Sensing of the Pressure Driven Magnetic Ground States in Bulk CrSBr. NANO LETTERS 2023; 23:9587-9593. [PMID: 37823538 DOI: 10.1021/acs.nanolett.3c03216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Competition between exchange interactions and magnetocrystalline anisotropy may bring new magnetic states that are of great current interest. An applied hydrostatic pressure can further be used to tune their balance. In this work, we investigate the magnetization process of a biaxial antiferromagnet in an external magnetic field applied along the easy axis. We find that the single metamagnetic transition of the Ising type observed in this material under ambient pressure transforms under hydrostatic pressure into two transitions, a first-order spin-flop transition followed by a second-order transition toward a polarized ferromagnetic state near saturation. This reversible tuning into a new magnetic phase is obtained in layered bulk CrSBr at low temperature by varying the interlayer distance using high hydrostatic pressure, which efficiently acts on the interlayer magnetic exchange and is probed by magneto-optical spectroscopy.
Collapse
Affiliation(s)
- Amit Pawbake
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Thomas Pelini
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Ivan Mohelsky
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Dipankar Jana
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Ivan Breslavetz
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Chang-Woo Cho
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Milan Orlita
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Marek Potemski
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
- CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland
| | | | - Nathan P Wilson
- Walter Schottky Institut, Physics Department and MCQST, Technische Universitat Munchen, 85748 Garching, Germany
| | - Kseniia Mosina
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Aljoscha Soll
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Zdenek Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Benjamin A Piot
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Mike E Zhitomirsky
- Université Grenoble Alpes, CEA, Grenoble INP, IRIG, Pheliqs, 38000 Grenoble, France
- Institut Laue-Langevin, F-38042 Grenoble Cedex 9, France
| | - Clement Faugeras
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| |
Collapse
|
25
|
Zhang Y, Zhang J, Yang W, Zhang H, Jia J. Engineering topological states in a two-dimensional honeycomb lattice. Phys Chem Chem Phys 2023; 25:25398-25407. [PMID: 37705503 DOI: 10.1039/d3cp03507g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/15/2023]
Abstract
In this work, we use first-principles calculations to determine the interplay between spin-orbit coupling (SOC) and magnetism which can not only generate a quantum anomalous Hall state but can also result in topologically trivial states although some honeycomb systems host large band gaps. By employing tight-binding model analysis, we have summarized two types of topologically trivial states: one is due to the coexistence of quadratic non-Dirac and linear Dirac bands in the same spin channel that act together destructively in magnetic materials (such as, CrBr3, CrCl3, and VBr3 monolayers); the other one is caused by the destructive coupling effect between two different spin channels due to small magnetic spin splitting in heavy-metal-based materials, such as, BaTe(111)-supported plumbene. Further investigations reveal that topologically nontrivial states can be realized by removing the Dirac band dispersion of the magnetic monolayers for the former case (such as in alkali metal doped CrBr3), while separating the two different spin channels from each other by enhancing the magnetic spin splitting for the latter case (such as in half-iodinated silicene). Thus, our work provides a theoretical guideline to manipulate the topological states in a two-dimensional honeycomb lattice.
Collapse
Affiliation(s)
- Yaling Zhang
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
| | - Jingjing Zhang
- College of Physics and Electronic Information, Shanxi Normal University, Taiyuan 030006, China
| | - Wenjia Yang
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
| | - Huisheng Zhang
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
- College of Physics and Electronic Information, Shanxi Normal University, Taiyuan 030006, China
| | - Jianfeng Jia
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
| |
Collapse
|
26
|
Man P, Huang L, Zhao J, Ly TH. Ferroic Phases in Two-Dimensional Materials. Chem Rev 2023; 123:10990-11046. [PMID: 37672768 DOI: 10.1021/acs.chemrev.3c00170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.
Collapse
Affiliation(s)
- Ping Man
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
| |
Collapse
|
27
|
He J, Li S, Frauenheim T, Zhou Z. Ultrafast Laser Pulse Induced Transient Ferrimagnetic State and Spin Relaxation Dynamics in Two-Dimensional Antiferromagnets. NANO LETTERS 2023; 23:8348-8354. [PMID: 37642209 PMCID: PMC10510573 DOI: 10.1021/acs.nanolett.3c02727] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 08/25/2023] [Indexed: 08/31/2023]
Abstract
We employ real-time time-dependent density functional theory (rt-TDDFT) and ab initio nonadiabatic molecular dynamics (NAMD) to systematically investigate the ultrafast laser pulses induced spin transfer and relaxation dynamics of two-dimensional (2D) antiferromagnetic-ferromagnetic (AFM/FM) MnPS3/MnSe2 van der Waals heterostructures. We demonstrate that laser pulses can induce a ferrimagnetic (FiM) state in the AFM MnPS3 layer within tens of femtoseconds and maintain it for subpicosecond time scale before reverting to the AFM state. We identify the mechanism in which the asymmetric optical intersite spin transfer (OISTR) effect occurring within the sublattices of the AFM and FM layers drives the interlayer spin-selective charge transfer, leading to the transition from AFM to FiM state. Furthermore, the unequal electron-phonon coupling of spin-up and spin-down channels of AFM spin sublattice causes an inequivalent spin relaxation, in turn extending the time scale of the FiM state. These findings are essential for designing novel optical-driven ultrafast 2D magnetic switches.
Collapse
Affiliation(s)
- Junjie He
- Faculty
of Science, Department of Physical and Macromolecular Chemistry, Charles University, Prague 12843, Czech Republic
| | - Shuo Li
- Institute
of Advanced Study, Chengdu University, Chengdu 610100, China
| | | | - Zhaobo Zhou
- Bremen
Center for Computational Materials Science, University of Bremen, Bremen 28359, Germany
| |
Collapse
|
28
|
Shrestha S, Li M, Park S, Tong X, DiMarzio D, Cotlet M. Room temperature valley polarization via spin selective charge transfer. Nat Commun 2023; 14:5234. [PMID: 37633986 PMCID: PMC10460417 DOI: 10.1038/s41467-023-40967-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Accepted: 08/17/2023] [Indexed: 08/28/2023] Open
Abstract
The two degenerate valleys in transition metal dichalcogenides can be used to store and process information for quantum information science and technology. A major challenge is maintaining valley polarization at room temperature where phonon-induced intervalley scattering is prominent. Here we demonstrate room temperature valley polarization in heterostructures of monolayer MoS2 and naphthylethylammine based one-dimensional chiral lead halide perovskite. By optically exciting the heterostructures with linearly polarized light close to resonance and measuring the helicity resolved photoluminescence, we obtain a degree of polarization of up to -7% and 8% in MoS2/right-handed (R-(+)-) and left-handed (S-(-)-) 1-(1-naphthyl)ethylammonium lead iodide perovskite, respectively. We attribute this to spin selective charge transfer from MoS2 to the chiral perovskites, where the perovskites act as a spin filter due to their chiral nature. Our study provides a simple, yet robust route to obtain room temperature valley polarization, paving the way for practical valleytronics devices.
Collapse
Affiliation(s)
- Shreetu Shrestha
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA.
| | - Mingxing Li
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Suji Park
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Xiao Tong
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Donald DiMarzio
- Northrop Grumman Corporation, One Space Park, Redondo Beach, CA, 90278, USA
| | - Mircea Cotlet
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA.
| |
Collapse
|
29
|
Bao H, Tian H, Li X, Ma X, Xu C, Yang Y, Wu D. Manipulating two-dimensional magnetic states via electric field and pressure. Phys Chem Chem Phys 2023; 25:22244-22249. [PMID: 37577831 DOI: 10.1039/d3cp02043f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/15/2023]
Abstract
Topological spin configurations have been an intriguing topic due to the exotic transport properties and promising applications in spintronic devices. The discovery of two-dimensional (2D) magnetic materials such as CrI3 provides new platforms for manipulating magnetic structures. Here, by first-principles calculations and Monte Carlo methods, we investigated the exchange interaction and magnetic states of 2D van der Waals ferromagnetic/ferroelectric heterostructure CrI3/In2Se3. By switching the polarization in the ferroelectric In2Se3 layer under an electric field and changing the interlayer distance between CrI3 and In2Se3 under pressure, four spin configurations, ferromagnetic states, topological domain wall skyrmions, topological bimerons, and stripe domains can be realized. These striking tunable magnetic states can be understood from the Dzyaloshinskii-Moriya interaction and single-ion anisotropy parameters being modified by switching the polarization and changing the interlayer distance. Our results of controllable topological/non-topological spin states broaden the spin phenomena and potential of spintronic applications in van der Waals heterostructures.
Collapse
Affiliation(s)
- Hengxing Bao
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China.
| | - Hao Tian
- School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, China.
| | - Xu Li
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China.
| | - Xingyue Ma
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China.
| | - Changsong Xu
- Key Laboratory of Computational Physical Sciences (Ministry of Education), Institute of Computational Physical Sciences, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yurong Yang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China.
| | - Di Wu
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China.
| |
Collapse
|
30
|
Liang X, Sun J, Yu Z. Tunable valley splitting in two-dimensional CrBr 3/VSe 2van der Waals heterostructure under strains and electric fields. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:455502. [PMID: 37552995 DOI: 10.1088/1361-648x/acee3f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2023] [Accepted: 08/08/2023] [Indexed: 08/10/2023]
Abstract
Valleytronics opens up fascinating opportunities for using the valley degree of freedom in information storage and quantum computation. Here, based on the first-principles calculations, we investigate the effects of biaxial strains and electric fields on the magnetic, electronic, and valleytronic properties of two-dimensional CrBr3/VSe2van der Waals (vdW) heterostructure consisting of two ferromagnetic monolayers. An interlayer magnetic phase transition from parallel to antiparallel is found when a compressive strain exceeds-2%or a tensile strain exceeds 4% is applied, while the interlayer magnetic configuration remains parallel under perpendicular electric fields. The valley splitting in the conduction bands is significantly enhanced by a compressive strain or an electric field pointing from the VSe2to the CrBr3layer. Specifically, a large valley splitting about 30.8 meV is obtained in the system with antiparallel interlayer magnetic configurations under a compressive strain of-4%, which is more than three times that of pristine CrBr3/VSe2heterostructure. Our findings provide new insights into the future valleytronic applications for two-dimensional magnetic vdW heterostructures.
Collapse
Affiliation(s)
- Xuesong Liang
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, People's Republic of China
| | - Jin Sun
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, People's Republic of China
| | - Zhizhou Yu
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, People's Republic of China
| |
Collapse
|
31
|
Zhang K, Wang X, Mi W. Spin-splitting and switchable half-metallicity in a van der Waals multiferroic CuBiP 2Se 6/GdClBr heterojunction. Phys Chem Chem Phys 2023. [PMID: 37449502 DOI: 10.1039/d3cp02466k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
Multiferroic van der Waals (vdW) heterojunctions have a strong and nonvolatile magnetoelectric coupling effect, which is of great significance in spintronic devices. The electronic structure and magnetic properties of a GdClBr/CuBiP2Se6 vdW multiferroic heterojunction have been calculated using first-principles methods. Due to the spin-up charge transfer and Zeeman field, the ferroelectric CuBiP2Se6 exhibits spin splitting at the gamma point. It is found that the electronic structure and magnetic properties of the GdClBr/CuBiP2Se6 vdW multiferroic heterojunction have been significantly modulated by the electric polarization of CuBiP2Se6. During the reversal of the ferroelectric polarization of CuBiP2Se6, the ferromagnetic GdClBr monolayer transforms from a semiconductor to a half-metal. Meanwhile, in both upward and downward ferroelectric polarization, the GdClBr/CuBiP2Se6 heterojunction exhibits perpendicular magnetic anisotropy with a Curie temperature of 239 K. As the strain changes from -6% to 6%, the band structure of GdClBr shifts upward, and the band structure of CuBiP2Se6 shifts downward. Compressive strain can increase the Curie temperature of the GdClBr/CuBiP2Se6 heterojunction. The magnetic anisotropy of heterojunctions highly depends on biaxial strain, where the perpendicular (in-plane) magnetic anisotropy increases with the increased compressive (tensile) strain. The vdW multiferroic GdClBr/CuBiP2Se6 heterojunction has potential applications in spintronic devices.
Collapse
Affiliation(s)
- Kai Zhang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
| |
Collapse
|
32
|
Gong C, Zhang P, Norden T, Li Q, Guo Z, Chaturvedi A, Najafi A, Lan S, Liu X, Wang Y, Gong SJ, Zeng H, Zhang H, Petrou A, Zhang X. Ferromagnetism emerged from non-ferromagnetic atomic crystals. Nat Commun 2023; 14:3839. [PMID: 37380629 DOI: 10.1038/s41467-023-39002-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Accepted: 05/25/2023] [Indexed: 06/30/2023] Open
Abstract
The recently emerged ferromagnetic two-dimensional (2D) materials provide unique platforms for compact spintronic devices down to the atomic-thin regime; however, the prospect is hindered by the limited number of ferromagnetic 2D materials discovered with limited choices of magnetic properties. If 2D antiferromagnetism could be converted to 2D ferromagnetism, the range of 2D magnets and their potential applications would be significantly broadened. Here, we discovered emergent ferromagnetism by interfacing non-magnetic WS2 layers with the antiferromagnetic FePS3. The WS2 exhibits an order of magnitude enhanced Zeeman effect with a saturated interfacial exchange field ~38 Tesla. Given the pristine FePS3 is an intralayer antiferromagnet, the prominent interfacial exchange field suggests the formation of ferromagnetic FePS3 at interface. Furthermore, the enhanced Zeeman effect in WS2 is found to exhibit a strong WS2-thickness dependence, highlighting the layer-tailorable interfacial exchange coupling in WS2-FePS3 heterostructures, which is potentially attributed to the thickness-dependent interfacial hybridization.
Collapse
Affiliation(s)
- Cheng Gong
- Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California, Berkeley, CA, USA
- Department of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland, College Park, MD, USA
| | - Peiyao Zhang
- Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California, Berkeley, CA, USA
- Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, USA
| | - Tenzin Norden
- Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, USA
| | - Quanwei Li
- Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California, Berkeley, CA, USA
| | - Zhen Guo
- Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California, Berkeley, CA, USA
| | - Apoorva Chaturvedi
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Arman Najafi
- Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, USA
| | - Shoufeng Lan
- Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California, Berkeley, CA, USA
| | - Xiaoze Liu
- Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California, Berkeley, CA, USA
| | - Yuan Wang
- Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California, Berkeley, CA, USA
| | - Shi-Jing Gong
- Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, China
| | - Hao Zeng
- Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, USA
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China
| | - Athos Petrou
- Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, USA
| | - Xiang Zhang
- Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California, Berkeley, CA, USA.
- Faculties of Science and Engineering, The University of Hong Kong, Hong Kong, China.
| |
Collapse
|
33
|
Xu H, Jia K, Huang Y, Meng F, Zhang Q, Zhang Y, Cheng C, Lan G, Dong J, Wei J, Feng J, He C, Yuan Z, Zhu M, He W, Wan C, Wei H, Wang S, Shao Q, Gu L, Coey M, Shi Y, Zhang G, Han X, Yu G. Electrical detection of spin pumping in van der Waals ferromagnetic Cr 2Ge 2Te 6 with low magnetic damping. Nat Commun 2023; 14:3824. [PMID: 37380642 DOI: 10.1038/s41467-023-39529-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Accepted: 06/15/2023] [Indexed: 06/30/2023] Open
Abstract
The discovery of magnetic order in atomically-thin van der Waals materials has strengthened the alliance between spintronics and two-dimensional materials. An important use of magnetic two-dimensional materials in spintronic devices, which has not yet been demonstrated, would be for coherent spin injection via the spin-pumping effect. Here, we report spin pumping from Cr2Ge2Te6 into Pt or W and detection of the spin current by inverse spin Hall effect. The magnetization dynamics of the hybrid Cr2Ge2Te6/Pt system are measured, and a magnetic damping constant of ~ 4-10 × 10-4 is obtained for thick Cr2Ge2Te6 flakes, a record low for ferromagnetic van der Waals materials. Moreover, a high interface spin transmission efficiency (a spin mixing conductance of 2.4 × 1019/m2) is directly extracted, which is instrumental in delivering spin-related quantities such as spin angular momentum and spin-orbit torque across an interface of the van der Waals system. The low magnetic damping that promotes efficient spin current generation together with high interfacial spin transmission efficiency suggests promising applications for integrating Cr2Ge2Te6 into low-temperature two-dimensional spintronic devices as the source of coherent spin or magnon current.
Collapse
Affiliation(s)
- Hongjun Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Ke Jia
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Fanqi Meng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chen Cheng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guibin Lan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jing Dong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinwu Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China
| | - Jiafeng Feng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing, 100875, China
| | - Zhe Yuan
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Mingliang Zhu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Wenqing He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hongxiang Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shouguo Wang
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, China
| | - Qiming Shao
- Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Michael Coey
- School of Physics and CRANN, Trinity College, Dublin, 2, Ireland
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
| |
Collapse
|
34
|
Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
Collapse
Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
| |
Collapse
|
35
|
Lau CS, Das S, Verzhbitskiy IA, Huang D, Zhang Y, Talha-Dean T, Fu W, Venkatakrishnarao D, Johnson Goh KE. Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications. ACS NANO 2023. [PMID: 37257134 DOI: 10.1021/acsnano.3c03455] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
Collapse
Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yiyu Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
| |
Collapse
|
36
|
Grubišić-Čabo A, Michiardi M, Sanders CE, Bianchi M, Curcio D, Phuyal D, Berntsen MH, Guo Q, Dendzik M. In Situ Exfoliation Method of Large-Area 2D Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2301243. [PMID: 37236159 PMCID: PMC10401183 DOI: 10.1002/advs.202301243] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Indexed: 05/28/2023]
Abstract
2D materials provide a rich platform to study novel physical phenomena arising from quantum confinement of charge carriers. Many of these phenomena are discovered by surface sensitive techniques, such as photoemission spectroscopy, that work in ultra-high vacuum (UHV). Success in experimental studies of 2D materials, however, inherently relies on producing adsorbate-free, large-area, high-quality samples. The method that yields 2D materials of highest quality is mechanical exfoliation from bulk-grown samples. However, as this technique is traditionally performed in a dedicated environment, the transfer of samples into vacuum requires surface cleaning that might diminish the quality of the samples. In this article, a simple method for in situ exfoliation directly in UHV is reported, which yields large-area, single-layered films. Multiple metallic and semiconducting transition metal dichalcogenides are exfoliated in situ onto Au, Ag, and Ge. The exfoliated flakes are found to be of sub-millimeter size with excellent crystallinity and purity, as supported by angle-resolved photoemission spectroscopy, atomic force microscopy, and low-energy electron diffraction. The approach is well-suited for air-sensitive 2D materials, enabling the study of a new suite of electronic properties. In addition, the exfoliation of surface alloys and the possibility of controlling the substrate-2D material twist angle is demonstrated.
Collapse
Affiliation(s)
- Antonija Grubišić-Čabo
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, 9747 AG, The Netherlands
- Department of Applied Physics, KTH Royal Institute of Technology, Hannes Alfvéns väg 12, Stockholm, 114 19, Sweden
| | - Matteo Michiardi
- Quantum Matter Institute, University of British Columbia, Vancouver, BC, V6T 1Z4, Canada
- Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, V6T 1Z1, Canada
| | - Charlotte E Sanders
- Central Laser Facility, Research Complex at Harwell, Rutherford Appleton Laboratory, Harwell Campus, Didcot, 0X11 0QX, UK
| | - Marco Bianchi
- School of Physics and Astronomy, Aarhus University, Aarhus, 8000 C, Denmark
| | - Davide Curcio
- School of Physics and Astronomy, Aarhus University, Aarhus, 8000 C, Denmark
| | - Dibya Phuyal
- Department of Applied Physics, KTH Royal Institute of Technology, Hannes Alfvéns väg 12, Stockholm, 114 19, Sweden
| | - Magnus H Berntsen
- Department of Applied Physics, KTH Royal Institute of Technology, Hannes Alfvéns väg 12, Stockholm, 114 19, Sweden
| | - Qinda Guo
- Department of Applied Physics, KTH Royal Institute of Technology, Hannes Alfvéns väg 12, Stockholm, 114 19, Sweden
| | - Maciej Dendzik
- Department of Applied Physics, KTH Royal Institute of Technology, Hannes Alfvéns väg 12, Stockholm, 114 19, Sweden
| |
Collapse
|
37
|
Wu H, Guo J, Zhaxi S, Xu H, Mi S, Wang L, Chen S, Xu R, Ji W, Pang F, Cheng Z. Controllable CVD Growth of 2D Cr 5Te 8 Nanosheets with Thickness-Dependent Magnetic Domains. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37205739 DOI: 10.1021/acsami.3c02446] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
As a unique 2D magnetic material with self-intercalated structure, Cr5Te8 exhibits many intriguing magnetic properties. While its ferromagnetism of Cr5Te8 has been previously reported, the research on its magnetic domain remains unexplored. Herein, we have successfully fabricated 2D Cr5Te8 nanosheets with controlled thickness and lateral size by chemical vapor deposition (CVD). Then magnetic property measurement system revealed Cr5Te8 nanosheets exhibiting intense out-of-plane ferromagnetism with a Curie temperature (TC) of 176 K. Significantly, we reported for the first time two magnetic domains: magnetic bubbles and thickness-dependent maze-like magnetic domains in our Cr5Te8 nanosheets by cryogenic magnetic force microscopy (MFM). The domain width of the maze-like magnetic domains increases rapidly with decreasing sample thickness; meanwhile, the domain contrast decreases. This indicates the dominant role of ferromagnetism shifts from dipolar interactions to magnetic anisotropy. Our research not only establishes a pathway for the controllable growth of 2D magnetic materials but also points toward novel avenues for regulating magnetic phases and methodically tuning domain characteristics.
Collapse
Affiliation(s)
- Hanxiang Wu
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Jianfeng Guo
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Suonan Zhaxi
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Hua Xu
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Shuo Mi
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Le Wang
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Shanshan Chen
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Rui Xu
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Fei Pang
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Zhihai Cheng
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| |
Collapse
|
38
|
Ganguli SC, Aapro M, Kezilebieke S, Amini M, Lado JL, Liljeroth P. Visualization of Moiré Magnons in Monolayer Ferromagnet. NANO LETTERS 2023; 23:3412-3417. [PMID: 37040471 PMCID: PMC10141560 DOI: 10.1021/acs.nanolett.3c00417] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2023] [Revised: 04/04/2023] [Indexed: 06/19/2023]
Abstract
Two-dimensional magnetic materials provide an ideal platform to explore collective many-body excitations associated with spin fluctuations. In particular, it should be feasible to explore, manipulate, and ultimately design magnonic excitations in two-dimensional van der Waals magnets in a controllable way. Here we demonstrate the emergence of moiré magnon excitations, stemming from the interplay of spin-excitations in monolayer CrBr3 and the moiré pattern arising from the lattice mismatch with the underlying substrate. The existence of moiré magnons is further confirmed via inelastic quasiparticle interference, showing the appearance of a dispersion pattern correlated with the moiré length scale. Our results provide a direct visualization in real-space of the dispersion of moiré magnons, demonstrating the versatility of moiré patterns in creating emergent many-body excitations.
Collapse
Affiliation(s)
| | - Markus Aapro
- Department
of Applied Physics, Aalto University, FI-00076 Aalto, Finland
| | - Shawulienu Kezilebieke
- Department
of Physics, Department of Chemistry and Nanoscience Center, University of Jyväskylä, FI-40014 Jyväskylä, Finland
| | - Mohammad Amini
- Department
of Applied Physics, Aalto University, FI-00076 Aalto, Finland
| | - Jose L. Lado
- Department
of Applied Physics, Aalto University, FI-00076 Aalto, Finland
| | - Peter Liljeroth
- Department
of Applied Physics, Aalto University, FI-00076 Aalto, Finland
| |
Collapse
|
39
|
Li P, Liu N, Zhang J, Chen S, Zhou X, Guo D, Wang C, Ji W, Zhong D. Two-Dimensional Magnetic Semiconducting Heterostructures of Single-Layer CrI 3-CrI 2. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19574-19581. [PMID: 37014936 DOI: 10.1021/acsami.2c22494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Single-layer heterostructures of magnetic materials are unique platforms for studying spin-related phenomena in two dimensions (2D) and have promising applications in spintronics and magnonics. Here, we report the fabrication of 2D magnetic lateral heterostructures consisting of single-layer chromium triiodide (CrI3) and chromium diiodide (CrI2). By carefully adjusting the abundance of iodine based on molecular beam epitaxy, single-layer CrI3-CrI2 heterostructures were grown on Au(111) surfaces with nearly atomic-level seamless boundaries. Two distinct types of interfaces, i.e., zigzag and armchair interfaces, have been identified by means of scanning tunneling microscopy. Our scanning tunneling spectroscopy study combined with density functional theory calculations indicates the existence of spin-polarized ground states below and above the Fermi energy localized at the boundary. Both the armchair and zigzag interfaces exhibit semiconducting nanowire behaviors with different spatial distributions of density of states. Our work presents a novel low-dimensional magnetic system for studying spin-related physics with reduced dimensions and designing advanced spintronic devices.
Collapse
Affiliation(s)
- Peigen Li
- School of Physics, Sun Yat-sen University, 510275 Guangzhou, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 510275 Guangzhou, China
| | - Nanshu Liu
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872 Beijing, China
| | - Jihai Zhang
- School of Physics, Sun Yat-sen University, 510275 Guangzhou, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 510275 Guangzhou, China
| | - Shenwei Chen
- School of Physics, Sun Yat-sen University, 510275 Guangzhou, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 510275 Guangzhou, China
| | - Xuhan Zhou
- School of Physics, Sun Yat-sen University, 510275 Guangzhou, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 510275 Guangzhou, China
| | - Donghui Guo
- School of Physics, Sun Yat-sen University, 510275 Guangzhou, China
| | - Cong Wang
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872 Beijing, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872 Beijing, China
| | - Dingyong Zhong
- School of Physics, Sun Yat-sen University, 510275 Guangzhou, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 510275 Guangzhou, China
| |
Collapse
|
40
|
Huang X, Zhang L, Tong L, Li Z, Peng Z, Lin R, Shi W, Xue KH, Dai H, Cheng H, de Camargo Branco D, Xu J, Han J, Cheng GJ, Miao X, Ye L. Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications. Nat Commun 2023; 14:2190. [PMID: 37069179 PMCID: PMC10110563 DOI: 10.1038/s41467-023-37918-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 04/05/2023] [Indexed: 04/19/2023] Open
Abstract
The exchange bias (EB) effect plays an undisputed role in the development of highly sensitive, robust, and high-density spintronic devices in magnetic data storage. However, the weak EB field, low blocking temperature, as well as the lack of modulation methods, seriously limit the application of EB in van der Waals (vdW) spintronic devices. Here, we utilized pressure engineering to tune the vdW spacing of the two-dimensional (2D) FePSe3/Fe3GeTe2 heterostructures. The EB field (HEB, from 29.2 mT to 111.2 mT) and blocking temperature (Tb, from 20 K to 110 K) are significantly enhanced, and a highly sensitive and robust spin valve is demonstrated. Interestingly, this enhancement of the EB effect was extended to exposed Fe3GeTe2, due to the single-domain nature of Fe3GeTe2. Our findings provide opportunities for the producing, exploring, and tuning of magnetic vdW heterostructures with strong interlayer coupling, thereby enabling customized 2D spintronic devices in the future.
Collapse
Affiliation(s)
- Xinyu Huang
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Luman Zhang
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Lei Tong
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zheng Li
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zhuiri Peng
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Runfeng Lin
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wenhao Shi
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Kan-Hao Xue
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hongwei Dai
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hui Cheng
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Danilo de Camargo Branco
- School of Industrial Engineering and Birck Nanotechnology Centre, Purdue University, West Lafayette, IN, 47907, USA
| | - Jianbin Xu
- Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, China
| | - Junbo Han
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Gary J Cheng
- School of Industrial Engineering and Birck Nanotechnology Centre, Purdue University, West Lafayette, IN, 47907, USA.
| | - Xiangshui Miao
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China.
| | - Lei Ye
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China.
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai, 200083, China.
| |
Collapse
|
41
|
Parida S, Dobley A, Carter CB, Dongare AM. Phase engineering of layered anode materials during ion-intercalation in Van der Waal heterostructures. Sci Rep 2023; 13:5408. [PMID: 37012258 PMCID: PMC10070316 DOI: 10.1038/s41598-023-31342-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 03/10/2023] [Indexed: 04/05/2023] Open
Abstract
Transition metal dichalcogenides (TMDs) are a class of 2D materials demonstrating promising properties, such as high capacities and cycling stabilities, making them strong candidates to replace graphitic anodes in lithium-ion batteries. However, certain TMDs, for instance, MoS2, undergo a phase transformation from 2H to 1T during intercalation that can affect the mobility of the intercalating ions, the anode voltage, and the reversible capacity. In contrast, select TMDs, for instance, NbS2 and VS2, resist this type of phase transformation during Li-ion intercalation. This manuscript uses density functional theory simulations to investigate the phase transformation of TMD heterostructures during Li-, Na-, and K-ion intercalation. The simulations suggest that while stacking MoS2 layers with NbS2 layers is unable to limit this 2H → 1T transformation in MoS2 during Li-ion intercalation, the interfaces effectively stabilize the 2H phase of MoS2 during Na- and K-ion intercalation. However, stacking MoS2 layers with VS2 is able to suppress the 2H → 1T transformation of MoS2 during the intercalation of Li, Na, and K-ions. The creation of TMD heterostructures by stacking MoS2 with layers of non-transforming TMDs also renders theoretical capacities and electrical conductivities that are higher than that of bulk MoS2.
Collapse
Affiliation(s)
- Shayani Parida
- Department of Materials Science and Engineering, University of Connecticut, Storrs, CT, USA
| | | | - C Barry Carter
- Department of Chemical and Biomolecular Engineering, University of Connecticut, Storrs, CT, USA
- Center for Integrated Nanotechnologies (CINT), Sandia National Laboratories, Albuquerque, NM, USA
| | - Avinash M Dongare
- Department of Materials Science and Engineering, University of Connecticut, Storrs, CT, USA.
| |
Collapse
|
42
|
Grzeszczyk M, Acharya S, Pashov D, Chen Z, Vaklinova K, van Schilfgaarde M, Watanabe K, Taniguchi T, Novoselov KS, Katsnelson MI, Koperski M. Strongly Correlated Exciton-Magnetization System for Optical Spin Pumping in CrBr 3 and CrI 3 . ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209513. [PMID: 36787625 DOI: 10.1002/adma.202209513] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2022] [Revised: 01/13/2023] [Indexed: 05/17/2023]
Abstract
Ferromagnetism in van der Waals systems, preserved down to a monolayer limit, attracted attention to a class of materials with general composition CrX3 (X=I, Br, and Cl), which are treated now as canonical 2D ferromagnets. Their diverse magnetic properties, such as different easy axes or varying and controllable character of in-plane or interlayer ferromagnetic coupling, make them promising candidates for spintronic, photonic, optoelectronic, and other applications. Still, significantly different magneto-optical properties between the three materials have been presenting a challenging puzzle for researchers over the last few years. Herewith, it is demonstrated that despite similar structural and magnetic configurations, the coupling between excitons and magnetization is qualitatively different in CrBr3 and CrI3 films. Through a combination of the optical spin pumping experiments with the state-of-the-art theory describing bound excitonic states in the presence of magnetization, we concluded that the hole-magnetization coupling has the opposite sign in CrBr3 and CrI3 and also between the ground and excited exciton state. Consequently, efficient spin pumping capabilities are demonstrated in CrBr3 driven by magnetization via spin-dependent absorption, and the different origins of the magnetic hysteresis in CrBr3 and CrI3 are unraveled.
Collapse
Affiliation(s)
- M Grzeszczyk
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - S Acharya
- Institute for Molecules and Materials, Radboud University, AJ Nijmegen, NL-6525, The Netherlands
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - D Pashov
- King's College London, Theory and Simulation of Condensed Matter, The Strand, London, WC2R 2LS, UK
| | - Z Chen
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - K Vaklinova
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - M van Schilfgaarde
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
- King's College London, Theory and Simulation of Condensed Matter, The Strand, London, WC2R 2LS, UK
| | - K Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - T Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - K S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - M I Katsnelson
- Institute for Molecules and Materials, Radboud University, AJ Nijmegen, NL-6525, The Netherlands
| | - M Koperski
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| |
Collapse
|
43
|
Edwards B, Dowinton O, Hall AE, Murgatroyd PAE, Buchberger S, Antonelli T, Siemann GR, Rajan A, Morales EA, Zivanovic A, Bigi C, Belosludov RV, Polley CM, Carbone D, Mayoh DA, Balakrishnan G, Bahramy MS, King PDC. Giant valley-Zeeman coupling in the surface layer of an intercalated transition metal dichalcogenide. NATURE MATERIALS 2023; 22:459-465. [PMID: 36658327 DOI: 10.1038/s41563-022-01459-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Accepted: 12/06/2022] [Indexed: 06/17/2023]
Abstract
Spin-valley locking is ubiquitous among transition metal dichalcogenides with local or global inversion asymmetry, in turn stabilizing properties such as Ising superconductivity, and opening routes towards 'valleytronics'. The underlying valley-spin splitting is set by spin-orbit coupling but can be tuned via the application of external magnetic fields or through proximity coupling. However, only modest changes have been realized to date. Here, we investigate the electronic structure of the V-intercalated transition metal dichalcogenide V1/3NbS2 using microscopic-area spatially resolved and angle-resolved photoemission spectroscopy. Our measurements and corresponding density functional theory calculations reveal that the bulk magnetic order induces a giant valley-selective Ising coupling exceeding 50 meV in the surface NbS2 layer, equivalent to application of a ~250 T magnetic field. This energy scale is of comparable magnitude to the intrinsic spin-orbit splittings, and indicates how coupling of local magnetic moments to itinerant states of a transition metal dichalcogenide monolayer provides a powerful route to controlling their valley-spin splittings.
Collapse
Affiliation(s)
- B Edwards
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
| | - O Dowinton
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
| | - A E Hall
- Department of Physics, University of Warwick, Coventry, United Kingdom
| | - P A E Murgatroyd
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
| | - S Buchberger
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - T Antonelli
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
| | - G-R Siemann
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
| | - A Rajan
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
| | - E Abarca Morales
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - A Zivanovic
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - C Bigi
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
| | - R V Belosludov
- Institute for Materials Research, Tohoku University, Sendai, Japan
| | - C M Polley
- MAX IV Laboratory, Lund University, Lund, Sweden
| | - D Carbone
- MAX IV Laboratory, Lund University, Lund, Sweden
| | - D A Mayoh
- Department of Physics, University of Warwick, Coventry, United Kingdom
| | - G Balakrishnan
- Department of Physics, University of Warwick, Coventry, United Kingdom
| | - M S Bahramy
- Department of Physics and Astronomy, University of Manchester, Manchester, UK.
| | - P D C King
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK.
| |
Collapse
|
44
|
Casas BW, Li Y, Moon A, Xin Y, McKeever C, Macy J, Petford-Long AK, Phatak CM, Santos EJG, Choi ES, Balicas L. Coexistence of Merons with Skyrmions in the Centrosymmetric Van Der Waals Ferromagnet Fe 5- x GeTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2212087. [PMID: 36780298 DOI: 10.1002/adma.202212087] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2022] [Revised: 02/02/2023] [Indexed: 05/17/2023]
Abstract
Fe5- x GeTe2 is a centrosymmetric, layered van der Waals (vdW) ferromagnet that displays Curie temperatures Tc (270-330 K) that are within the useful range for spintronic applications. However, little is known about the interplay between its topological spin textures (e.g., merons, skyrmions) with technologically relevant transport properties such as the topological Hall effect (THE) or topological thermal transport. Here, via high-resolution Lorentz transmission electron microscopy, it is shown that merons and anti-meron pairs coexist with Néel skyrmions in Fe5- x GeTe2 over a wide range of temperatures and probe their effects on thermal and electrical transport. A THE is detected, even at room T, that senses merons at higher T's, as well as their coexistence with skyrmions as T is lowered, indicating an on-demand thermally driven formation of either type of spin texture. Remarkably, an unconventional THE is also observed in absence of Lorentz force, and it is attributed to the interaction between charge carriers and magnetic field-induced chiral spin textures. These results expose Fe5-x GeTe2 as a promising candidate for the development of applications in skyrmionics/meronics due to the interplay between distinct but coexisting topological magnetic textures and unconventional transport of charge/heat carriers.
Collapse
Affiliation(s)
- Brian W Casas
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
| | - Yue Li
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Alex Moon
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
- Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Yan Xin
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
| | - Conor McKeever
- Institute for Condensed Matter and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK
| | - Juan Macy
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
- Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Amanda K Petford-Long
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Charudatta M Phatak
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Elton J G Santos
- Institute for Condensed Matter and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK
- Higgs Centre for Theoretical Physics, The University of Edinburgh, Edinburgh, EH9 3FD, UK
- Donostia International Physics Center (DIPC), 20018, Donostia-San Sebastián, Basque Country, Spain
| | - Eun Sang Choi
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
- Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Luis Balicas
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
- Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| |
Collapse
|
45
|
Peng J, Su Y, Lv H, Wu J, Liu Y, Wang M, Zhao J, Guo Y, Wu X, Wu C, Xie Y. Even-Odd-Layer-Dependent Ferromagnetism in 2D Non-van-der-Waals CrCuSe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209365. [PMID: 36797646 DOI: 10.1002/adma.202209365] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Revised: 01/02/2023] [Indexed: 06/18/2023]
Abstract
Van der Waals (vdW) layered materials with strong magnetocrystalline anisotropy have attracted significant interest as the long-range magnetic order in these systems can survive even when their thicknesses is reduced to the 2D limit. Even though the interlayer coupling between the neighboring magnetic layers is very weak, it has a determining effect on the magnetism of these atomic-thickness materials. Herein, a new 2D ferromagnetic material, namely, non-vdW CuCrSe2 nanosheets with even-odd-layer-dependent ferromagnetism when laminated from an antiferromagnetic bulk is reported. Monolayer and even-layer CuCrSe2 exhibit the anomalous Hall effect and a significantly enhanced magnetic ordering temperature of more than 125 K. In contrast, the linear Hall effect exists in the odd-layer samples. Theoretical calculations indicate that the layer-dependent magnetic coupling is attributable to the orbital shift of the Cr atoms in the CrSe2 layers owing to the Cu-induced breaking of the centrosymmetry. Thus, this work sheds light on the exotic magnetic properties of layered materials that exhibit phenomena beyond weak interlayer interactions.
Collapse
Affiliation(s)
- Jing Peng
- School of Chemistry and Materials Sciences, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China. Hefei, Hefei, 230026, P. R. China
| | - Yueqi Su
- School of Chemistry and Materials Sciences, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China. Hefei, Hefei, 230026, P. R. China
| | - Haifeng Lv
- School of Chemistry and Materials Sciences, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China. Hefei, Hefei, 230026, P. R. China
- CAS Key Lab of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science & Technology of China, Hefei, 230026, P. R. China
| | - Jiajing Wu
- School of Chemistry and Materials Sciences, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China. Hefei, Hefei, 230026, P. R. China
| | - Yuhua Liu
- School of Chemistry and Materials Sciences, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China. Hefei, Hefei, 230026, P. R. China
| | - Minghao Wang
- School of Chemistry and Materials Sciences, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China. Hefei, Hefei, 230026, P. R. China
| | - Jiyin Zhao
- School of Chemistry and Materials Sciences, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China. Hefei, Hefei, 230026, P. R. China
| | - Yuqiao Guo
- School of Chemistry and Materials Sciences, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China. Hefei, Hefei, 230026, P. R. China
| | - Xiaojun Wu
- School of Chemistry and Materials Sciences, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China. Hefei, Hefei, 230026, P. R. China
- CAS Key Lab of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science & Technology of China, Hefei, 230026, P. R. China
| | - Changzheng Wu
- School of Chemistry and Materials Sciences, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China. Hefei, Hefei, 230026, P. R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, Anhui, 230031, P. R. China
| | - Yi Xie
- School of Chemistry and Materials Sciences, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China. Hefei, Hefei, 230026, P. R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, Anhui, 230031, P. R. China
| |
Collapse
|
46
|
Rong R, Liu Y, Nie X, Zhang W, Zhang Z, Liu Y, Guo W. The Interaction of 2D Materials With Circularly Polarized Light. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206191. [PMID: 36698292 PMCID: PMC10074140 DOI: 10.1002/advs.202206191] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
2D materials (2DMs), due to spin-valley locking degree of freedom, exhibit strongly bound exciton and chiral optical selection rules and become promising material candidates for optoelectronic and spin/valleytronic devices. Over the last decade, the manifesting of 2D materials by circularly polarized lights expedites tremendous fascinating phenomena, such as valley/exciton Hall effect, Moiré exciton, optical Stark effect, circular dichroism, circularly polarized photoluminescence, and spintronic property. In this review, recent advance in the interaction of circularly polarized light with 2D materials covering from graphene, black phosphorous, transition metal dichalcogenides, van der Waals heterostructures as well as small proportion of quasi-2D perovskites and topological materials, is overviewed. The confronted challenges and theoretical and experimental opportunities are also discussed, attempting to accelerate the prosperity of chiral light-2DMs interactions.
Collapse
Affiliation(s)
- Rong Rong
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Ying Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Xuchen Nie
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wei Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Yanpeng Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| |
Collapse
|
47
|
Lee E, Kim J, Park J, Hwang J, Jang H, Cho K, Choi W. Realizing Electronic Synapses by Defect Engineering in Polycrystalline Two-Dimensional MoS 2 for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15839-15847. [PMID: 36919898 DOI: 10.1021/acsami.2c21688] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Neuromorphic computing based on two-dimensional transition-metal dichalcogenides (2D TMDs) has attracted significant attention recently due to their extraordinary properties generated by the atomic-thick layered structure. This study presents sulfur-defect-assisted MoS2 artificial synaptic devices fabricated by a simple sputtering process, followed by a precise sulfur (S) vacancy-engineering process. While the as-sputtered MoS2 film does not show synaptic behavior, the S vacancy-controlled MoS2 film exhibits excellent synapse with remarkable nonvolatile memory characteristics such as a high switching ratio (∼103), a large memory window, and long retention time (∼104 s) in addition to synaptic functions such as paired-pulse facilitation (PPF) and long-term potentiation (LTP)/depression (LTD). The synaptic device working mechanism of Schottky barrier height modulation by redistributing S vacancies was systemically analyzed by electrical, physical, and microscopy characterizations. The presented MoS2 synaptic device, based on the precise defect engineering of sputtered MoS2, is a facile, low-cost, complementary metal-oxide semiconductor (CMOS)-compatible, and scalable method and provides a procedural guideline for the design of practical 2D TMD-based neuromorphic computing.
Collapse
Affiliation(s)
- Eunho Lee
- Department of Mechanical and Energy Engineering, University of North Texas, Denton, Texas 76203, United States
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea
| | - Junyoung Kim
- Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203, United States
| | - Juhong Park
- Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203, United States
| | - Jinwoo Hwang
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea
| | - Hyoik Jang
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea
| | - Kilwon Cho
- Center for Advanced Soft Electronics, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Wonbong Choi
- Department of Mechanical and Energy Engineering, University of North Texas, Denton, Texas 76203, United States
- Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203, United States
| |
Collapse
|
48
|
Faria Junior PE, Fabian J. Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe 2/WSe 2 Heterobilayers: From Energy Bands to Dipolar Excitons. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1187. [PMID: 37049281 PMCID: PMC10096971 DOI: 10.3390/nano13071187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 03/22/2023] [Accepted: 03/24/2023] [Indexed: 06/19/2023]
Abstract
Multilayered van der Waals heterostructures based on transition metal dichalcogenides are suitable platforms on which to study interlayer (dipolar) excitons, in which electrons and holes are localized in different layers. Interestingly, these excitonic complexes exhibit pronounced valley Zeeman signatures, but how their spin-valley physics can be further altered due to external parameters-such as electric field and interlayer separation-remains largely unexplored. Here, we perform a systematic analysis of the spin-valley physics in MoSe2/WSe2 heterobilayers under the influence of an external electric field and changes of the interlayer separation. In particular, we analyze the spin (Sz) and orbital (Lz) degrees of freedom, and the symmetry properties of the relevant band edges (at K, Q, and Γ points) of high-symmetry stackings at 0° (R-type) and 60° (H-type) angles-the important building blocks present in moiré or atomically reconstructed structures. We reveal distinct hybridization signatures on the spin and the orbital degrees of freedom of low-energy bands, due to the wave function mixing between the layers, which are stacking-dependent, and can be further modified by electric field and interlayer distance variation. We find that H-type stackings favor large changes in the g-factors as a function of the electric field, e.g., from -5 to 3 in the valence bands of the Hhh stacking, because of the opposite orientation of Sz and Lz of the individual monolayers. For the low-energy dipolar excitons (direct and indirect in k-space), we quantify the electric dipole moments and polarizabilities, reflecting the layer delocalization of the constituent bands. Furthermore, our results show that direct dipolar excitons carry a robust valley Zeeman effect nearly independent of the electric field, but tunable by the interlayer distance, which can be rendered experimentally accessible via applied external pressure. For the momentum-indirect dipolar excitons, our symmetry analysis indicates that phonon-mediated optical processes can easily take place. In particular, for the indirect excitons with conduction bands at the Q point for H-type stackings, we find marked variations of the valley Zeeman (∼4) as a function of the electric field, which notably stands out from the other dipolar exciton species. Our analysis suggests that stronger signatures of the coupled spin-valley physics are favored in H-type stackings, which can be experimentally investigated in samples with twist angle close to 60°. In summary, our study provides fundamental microscopic insights into the spin-valley physics of van der Waals heterostructures, which are relevant to understanding the valley Zeeman splitting of dipolar excitonic complexes, and also intralayer excitons.
Collapse
|
49
|
Guan Y, Miao L, He J, Ning J, Chen Y, Xie W, Sun J, Gopalan V, Zhu J, Wang X, Alem N, Zhang Q, Mao Z. Layered Semiconductor Cr 0.32Ga 0.68Te 2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate. J Am Chem Soc 2023; 145:4683-4690. [PMID: 36795912 DOI: 10.1021/jacs.2c12848] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/18/2023]
Abstract
The valleytronic state found in group-VI transition-metal dichalcogenides such as MoS2 has attracted immense interest since its valley degree of freedom could be used as an information carrier. However, valleytronic applications require spontaneous valley polarization. Such an electronic state is predicted to be accessible in a new ferroic family of materials, i.e., ferrovalley materials, which features the coexistence of spontaneous spin and valley polarization. Although many atomic monolayer materials with hexagonal lattices have been predicted to be ferrovalley materials, no bulk ferrovalley material candidates have been reported or proposed. Here, we show that a new non-centrosymmetric van der Waals (vdW) semiconductor Cr0.32Ga0.68Te2.33, with intrinsic ferromagnetism, is a possible candidate for bulk ferrovalley material. This material exhibits several remarkable characteristics: (i) it forms a natural heterostructure between vdW gaps, a quasi-two-dimensional (2D) semiconducting Te layer with a honeycomb lattice stacked on the 2D ferromagnetic slab comprised of the (Cr, Ga)-Te layers, and (ii) the 2D Te honeycomb lattice yields a valley-like electronic structure near the Fermi level, which, in combination with inversion symmetry breaking, ferromagnetism, and strong spin-orbit coupling contributed by heavy Te element, creates a possible bulk spin-valley locked electronic state with valley polarization as suggested by our DFT calculations. Further, this material can also be easily exfoliated to 2D atomically thin layers. Therefore, this material offers a unique platform to explore the physics of valleytronic states with spontaneous spin and valley polarization in both bulk and 2D atomic crystals.
Collapse
Affiliation(s)
- Yingdong Guan
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Leixin Miao
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jingyang He
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jinliang Ning
- Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, United States
| | - Yangyang Chen
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2-Dimensional Crystal Consortium, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Weiwei Xie
- Department of Chemistry, Michigan State University, East Lansing, Michigan 48824, United States
| | - Jianwei Sun
- Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, United States
| | - Venkatraman Gopalan
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jun Zhu
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2-Dimensional Crystal Consortium, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Xiaoping Wang
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Nasim Alem
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Qiang Zhang
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Zhiqiang Mao
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| |
Collapse
|
50
|
Choi J, Lane C, Zhu JX, Crooker SA. Asymmetric magnetic proximity interactions in MoSe 2/CrBr 3 van der Waals heterostructures. NATURE MATERIALS 2023; 22:305-310. [PMID: 36536140 DOI: 10.1038/s41563-022-01424-w] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Accepted: 10/27/2022] [Indexed: 06/17/2023]
Abstract
Magnetic proximity interactions between atomically thin semiconductors and two-dimensional magnets provide a means to manipulate spin and valley degrees of freedom in non-magnetic monolayers, without using applied magnetic fields1-3. In such van der Waals heterostructures, magnetic proximity interactions originate in the nanometre-scale coupling between spin-dependent electronic wavefunctions in the two materials, and typically their overall effect is regarded as an effective magnetic field acting on the semiconductor monolayer4-8. Here we demonstrate that magnetic proximity interactions in van der Waals heterostructures can in fact be markedly asymmetric. Valley-resolved reflection spectroscopy of MoSe2/CrBr3 van der Waals structures reveals strikingly different energy shifts in the K and K' valleys of the MoSe2 due to ferromagnetism in the CrBr3 layer. Density functional calculations indicate that valley-asymmetric magnetic proximity interactions depend sensitively on the spin-dependent hybridization of overlapping bands and as such are likely a general feature of hybrid van der Waals structures. These studies suggest routes to control specific spin and valley states in monolayer semiconductors9,10.
Collapse
Affiliation(s)
- Junho Choi
- National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Christopher Lane
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, USA
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Jian-Xin Zhu
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, USA
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Scott A Crooker
- National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, NM, USA.
| |
Collapse
|