High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion

Thermal Transport Properties of Two-Dimensional Janus MoXSiN2 (X = S, Se, and Te)

The design of Janus materials offers an effective means of regulating both their physical and chemical properties, leading to their application in various fields. However, the underlying mechanism governing the modulation of the thermal transport characteristics through the construction of Janus materials remains unclear. In this work, we introduce VI-group elements into the MoSi2N4 structure, yielding two-dimensional Janus MoXSiN2 (X = S, Se, and Te) and systematically investigate their thermal transport properties based on first-principles calculation methods. Our findings reveal that the lattice thermal conductivities (κl) of MoSSiN2, MoSeSiN2, and MoTeSiN2 are 47.2, 24.3, and 40.6 W/mK at 300 K, respectively, significantly lower than that of MoSi2N4 (224 W/mK). Such low κl values mainly come from the introduction of X atoms, which enhances phonon scattering and reduces phonon vibration frequencies. In addition, MoTeSiN2 exhibits a higher κl compared to MoSeSiN2, contrary to the trend observed in most materials containing VI-group elements, where κl decreases gradually from S to Te. This anomalous behavior can be attributed to the competitive result between its lower phonon vibrational frequency and weaker phonon anharmonicity of MoTeSiN2. This work elucidates the inherent mechanism governing the modulation of thermal transport properties in Janus materials, thereby enhancing the potential application of Janus MoXSiN2 in engineering thermal management.

Low-temperature strain-free encapsulation for perovskite solar cells and modules passing multifaceted accelerated ageing tests

Perovskite solar cells promise to be part of the future portfolio of photovoltaic technologies, but their instability is slow down their commercialization. Major stability assessments have been recently achieved but reliable accelerated ageing tests on beyond small-area cells are still poor. Here, we report an industrial encapsulation process based on the lamination of highly viscoelastic semi-solid/highly viscous liquid adhesive atop the perovskite solar cells and modules. Our encapsulant reduces the thermomechanical stresses at the encapsulant/rear electrode interface. The addition of thermally conductive two-dimensional hexagonal boron nitride into the polymeric matrix improves the barrier and thermal management properties of the encapsulant. Without any edge sealant, encapsulated devices withstood multifaceted accelerated ageing tests, retaining >80% of their initial efficiency. Our encapsulation is applicable to the most established cell configurations (direct/inverted, mesoscopic/planar), even with temperature-sensitive materials, and extended to semi-transparent cells for building-integrated photovoltaics and Internet of Things systems.

Purely ionically bonded cation paving the way to ultralow thermal conductivity and large thermoelectric figure of merit in Ruddlesden-Popper perovskite Cs2SnI2Br2

Lower dimensional materials have gained quite a bit of popularity in the last few decades. Perovskite materials have been studied extensively for their photovoltaic properties. But for large scale application of photovoltaic materials, the thermal properties need to be studied. In this work, using first principles calculations, we have studied the thermal conductivity and thermoelectric performance of quasi two-dimensional (2D) Ruddlesden-Popper phase of perovskite, Cs2SnI2Br2. The Cs atoms are found to be ionically bonded to the halogens leading to low elastic constants and hence give rise to weak bonding. The large anharmonicity in this material causes the lattice thermal conductivity to be ultralow having a value of 0.30 W·m-1·K-1at 300 K and therefore the thermoelectric figure of merit has been found to be high with a maximum value of 2.08 at 600 K. This lead-free 2D perovskite can be the precursor to a wide variety of similar materials with ultralow thermal conductivity.

Miracle in "White":Hexagonal Boron Nitride

The exploration of 2D materials has captured significant attention due to their unique performances, notably focusing on graphene and hexagonal boron nitride (h-BN). Characterized by closely resembling atomic structures arranged in a honeycomb lattice, both graphene and h-BN share comparable traits, including exceptional thermal conductivity, impressive carrier mobility, and robust pi-pi interactions with organic molecules. Notably, h-BN has been extensively examined for its exceptional electrical insulating properties, inert passivation capabilities, and provision of an ideal ultraflat surface devoid of dangling bonds. These distinct attributes, contrasting with those of h-BN, such as its conductive versus insulating behavior, active versus inert nature, and absence of dangling surface bonds versus absorbent tendencies, render it a compelling material with broad application potential. Moreover, the unity of such contradictions endows h-BN with intriguing possibilities for unique applications in specific contexts. This review aims to underscore these key attributes and elucidate the intriguing contradictions inherent in current investigations of h-BN, fostering significant insights into the understanding of material properties.

Electron-electron scattering limits thermal conductivity of metals under extremely high electron temperatures

We report on the thermal transport properties of noble metals (gold, silver and copper) under conditions of extremely high electron temperatures (that are on the order of the Fermi energy). We perform parameter-free density functional theory calculations of the electron temperature-dependent electron-phonon coupling, electronic heat capacities, and thermal conductivities to elucidate the strong role played by the excitation of the low lyingd-bands on the transport properties of the noble metals. Our calculations show that, although the three metals have similar electronic band structures, the changes in their electron-phonon coupling at elevated electron temperatures are drastically different; while electron-phonon coupling decreases in gold, it increases in copper and, it remains relatively unperturbed for silver with increasing electron temperatures of up to ∼60 000 K (or 5 eV). We attribute this to the varying contributions from acoustic and longitudinal phonon modes to the electron-phonon coupling in the three metals. Although their electron-phonon coupling changes with electron temperature, the thermal conductivity trends with electron temperature are similar for all three metals. For instance, the thermal conductivities for all three metals reach their maximum values (on par with the room-temperature values of some of the most thermally conductive semiconductors) at electron temperatures of ∼6000 K, and thereafter monotonically decrease due to the enhanced effect of electron-electron scattering for electronic states that are further away from the Fermi energy. As such, only accounting for electron-phonon coupling and neglecting electron-electron scattering can lead to large over-predictions of the thermal conductivities at extremely high electron temperatures. Our results shed light on the microscopic understanding of the electronic scattering mechanisms and thermal transport in noble metals under conditions of extremely high electron temperatures and, as such, are significant for a plethora of applications such as in plasmonic devices that routinely leverage hot electron transport.

Multifunctional Applications Enabled by Fluorination of Hexagonal Boron Nitride

2D materials exhibit exceptional properties as compared to their macroscopic counterparts, with promising applications in nearly every area of science and technology. To unlock further functionality, the chemical functionalization of 2D structures is a powerful technique that enables tunability and new properties within these materials. Here, the successful effort to chemically functionalize hexagonal boron nitride (hBN), a chemically inert 2D ceramic with weak interlayer forces, using a gas-phase fluorination process is exploited. The fluorine functionalization guides interlayer expansion and increased polar surface charges on the hBN sheets resulting in a number of vastly improved applications. Specifically, the F-hBN exhibits enhanced dispersibility and thermal conductivity at higher temperatures by more than 75% offering exceptional performance as a thermofluid additive. Dispersion of low volumes of F-hBN in lubricating oils also offers marked improvements in lubrication and wear resistance for steel tribological contacts decreasing friction by 31% and wear by 71%. Additionally, incorporating numerous negatively charged fluorine atoms on hBN induces a permanent dipole moment, demonstrating its applicability in microelectronic device applications. The findings suggest that anchoring chemical functionalities to hBN moieties improves a variety of properties for h-BN, making it suitable for numerous other applications such as fillers or reinforcement agents and developing high-performance composite structures.

Meta-GGA study of 2D AlN/BN planer heterostructure and performance enhancement via strain engineering

CONTEXT

The 2D AlN/BN planer heterostructure is a promising wide band gap semiconductor, but systematic studies of its bandgap and optical characteristics under applied strain are scarce. Here, the engineering property of 2D AlN/BN comprising bandgap nature transition and optical absorption capability (from unstrained to strained) have been investigated using density functional theory calculations. The formation energy calculations confirm the stability of the simulated nanoheterostructure. The electronic band structure calculations demonstrate that nanoheterostructure is an indirect bandgap material with a large bandgap of 5.26 eV, which can be modified effectively by applying strain. According to the calculations, the transition from indirect to direct band gap behavior has been observed at +15% biaxial strain with 2.71 eV band gap energy. Meanwhile, calculations for optical absorption and dielectric function reveal that the system has significant absorption peaks in the ultraviolet region which are very sensitive to applied strain. As strain increases, the first absorption peaks are shifted towards a lower energy range from 5.73 eV (Ꜫ= 0 %) to 3.76 eV (Ꜫ = +15%), which features an enhancement of optical absorption for solar and solar-blind regions. Furthermore, we determined that the band edge positions in 2D AlN/BN straddled the water redox potential under strain, indicating its effectiveness as a proficient photocatalyst. These characteristics make 2D AlN/BN planer nanoheterostructure a promising candidate for applications in optoelectronics and photocatalytic water splitting performance.

METHODS

First principles computations based on density functional theory were employed to carry out all the calculations with a self-consistent approach. For solving the Kohn-Sham equations, the first principles dependent full-potential linearized augmented plane wave scheme were adopted. For addressing the exchange-correlation effects, the generalized gradient approximation of PBEsol functional was used. To prevent interaction between the periodic images, we have inserted a vacuum region of 10 Å in the z-direction. Non-negligible weak dispersion corrections in nanoheterostructure were considered by using the DFT-D3 method of Grimme's. The locally modified Becke-Johnson (lmBJ) exchange potential has also been applied to compute electronic and optical properties in this research to obtain more accurate information.

Quantum enhanced efficiency and spectral performance of paper-based flexible photodetectors functionalized with two dimensional materials

Flexible photodetectors (PDs) have exotic significance in recent years due to their enchanting potential in future optoelectronics. Moreover, paper-based fabricated PDs with outstanding flexibility unlock new avenues for future wearable electronics. Such PD has captured scientific interest for its efficient photoresponse properties due to the extraordinary assets like significant absorptive efficiency, surface morphology, material composition, affordability, bendability, and biodegradability. Quantum-confined materials harness the unique quantum-enhanced properties and hold immense promise for advancing both fundamental scientific understanding and practical implication. Two-dimensional (2D) materials as quantum materials have been one of the most extensively researched materials owing to their significant light absorption efficiency, increased carrier mobility, and tunable band gaps. In addition, 2D heterostructures can trap charge carriers at their interfaces, leading increase in photocurrent and photoconductivity. This review represents comprehensive discussion on recent developments in such PDs functionalized by 2D materials, highlighting charge transfer mechanism at their interface. This review thoroughly explains the mechanism behind the enhanced performance of quantum materials across a spectrum of figure of merits including external quantum efficiency, detectivity, spectral responsivity, optical gain, response time, and noise equivalent power. The present review studies the intricate mechanisms that reinforce these improvements, shedding light on the intricacies of quantum materials and their significant capabilities. Moreover, a detailed analysis of the technical applicability of paper-based PDs has been discussed with challenges and future trends, providing comprehensive insights into their practical usage in the field of future wearable and portable electronic technologies.

Flexible High-Temperature MoS2 Field-Effect Transistors and Logic Gates

High-temperature-resistant integrated circuits with excellent flexibility, a high integration level (nanoscale transistors), and low power consumption are highly desired in many fields, including aerospace. Compared with conventional SiC high-temperature transistors, transistors based on two-dimensional (2D) MoS2 have advantages of superb flexibility, atomic scale, and ultralow power consumption. However, MoS2 cannot survive at high temperature and drastically degrades above 200 °C. Here, we report MoS2 field-effect transistors (FETs) with top/bottom hexagonal boron nitride (h-BN) encapsulation and graphene electrodes. With the protection of the h-BN/h-BN structure, the devices can survive at much higher temperature (≥500 °C in air) than those of the MoS2 devices ever reported, which provides us an opportunity to explore the electrical properties and working mechanism of MoS2 devices at high temperature. Unlike the relatively low-temperature situation, the on/off ratio and subthreshold swing of MoS2 FETs show drastic variation at elevated temperature due to the injection of thermal emission carriers. Compared with metal electrode, devices with a graphene electrode demonstrate superior performance at high temperature (∼1-order-larger current on/off ratio, 3-7 times smaller subthreshold swing, and 5-9 times smaller threshold voltage shift). We further realize that the flexible CMOS NOT gate based on the above technique, and demonstrate logic computing at 550 °C. This work may stimulate the fundamental research of properties of 2D materials at high temperature, and also creates conditions for next-generation flexible harsh-environment-resistant integrated circuits.

Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates

High-efficient heat dissipation plays critical role for high-power-density electronics. Experimental synthesis of ultrahigh thermal conductivity boron arsenide (BAs, 1300 W m-1K-1) cooling substrates into the wide-bandgap semiconductor of gallium nitride (GaN) devices has been realized. However, the lack of systematic analysis on the heat transfer across the GaN-BAs interface hampers the practical applications. In this study, by constructing the accurate and high-efficient machine learning interatomic potentials, we perform multiscale simulations of the GaN-BAs heterostructures. Ultrahigh interfacial thermal conductance of 260 MW m-2K-1 is achieved, which lies in the well-matched lattice vibrations of BAs and GaN. The strong temperature dependence of interfacial thermal conductance is found between 300 to 450 K. Moreover, the competition between grain size and boundary resistance is revealed with size increasing from 1 nm to 1000 μm. Such deep-potential equipped multiscale simulations not only promote the practical applications of BAs cooling substrates in electronics, but also offer approach for designing advanced thermal management systems.

Anisotropic Strain-Tailoring Nonlinear Optical Response in van der Waals NbOI2

Two-dimensional (2D) NbOI2 demonstrates significant second-harmonic generation (SHG) with a high conversion efficiency. To unlock its full potential in practical applications, it is desirable to modulate the SHG behavior while utilizing the intrinsic lattice anisotropy. Here, we demonstrate direction-specific modulation of the SHG response in NbOI2 by applying anisotropic strain with respect to the intrinsic lattice orientations, where more than 2-fold enhancement in the SHG intensity is achieved under strain along the polar axis. The strain-driven SHG evolution is attributed to the strengthened built-in piezoelectric field (polar axis) and the enlarged Peierls distortions (nonpolar axis). Moreover, we provide quantifications of the correlation between strain and SHG intensity in terms of the susceptibility tensor. Our results demonstrate the effective coupling of orientation-specific strain to the anisotropic SHG response through the intrinsic polar order in 2D nonlinear optical crystals, opening a new paradigm toward the development of functional devices.

Unraveling High Thermal Conductivity with In-Plane Anisotropy Observed in Suspended SiP2

The anisotropic thermal transport properties of low-symmetry two-dimensional materials play an important role in understanding heat dissipation and optimizing thermal management in integrated devices. Examples of efficient energy dissipation and enhanced power sustainability have been demonstrated in nanodevices based on materials with anisotropic thermal transport properties. However, the exploration of materials with high thermal conductivity and strong in-plane anisotropy remains challenging. Herein, we demonstrate the observation of anisotropic in-plane thermal conductivities of few-layer SiP2 based on the micro-Raman thermometry method. For suspended SiP2 nanoflake, the thermal conductivity parallel to P-P chain direction (κ∥b) can reach 131 W m-1 K-1 and perpendicular to P-P chain direction (κ⊥b) is 89 W m-1 K-1 at room temperature, resulting in a significant anisotropic ratio (κ∥b/κ⊥b) of 1.47. Note that such a large anisotropic ratio mainly results from the higher phonon group velocity along the P-P chain direction. We also found that the thermal conductivity can be effectively modulated by increasing the SiP2 thickness, reaching a value as high as 202 W m-1 K-1 (120 W m-1 K-1) for κ∥b (κ⊥b) at 111 nm thickness, which is the highest among layered anisotropic phosphide materials. Notably, the anisotropic ratio always remains at a high level between 1.47 and 1.68, regardless of the variation of SiP2 thickness. Our observation provides a new platform to verify the fundamental theory of thermal transport and a crucial guidance for designing efficient thermal management schemes of anisotropic electronic devices.

Garnet-Based Solid-State Li Batteries with High-Surface-Area Porous LLZO Membranes

Rechargeable garnet-based solid-state Li batteries hold immense promise as nonflammable, nontoxic, and high energy density energy storage systems, employing Li7La3Zr2O12 (LLZO) with a garnet-type structure as the solid-state electrolyte. Despite substantial progress in this field, the advancement and eventual commercialization of garnet-based solid-state Li batteries are impeded by void formation at the LLZO/Li interface at practical current densities and areal capacities beyond 1 mA cm-2 and 1 mAh cm-2, respectively, resulting in limited cycling stability and the emergence of Li dendrites. Additionally, developing a fabrication approach for thin LLZO electrolytes to achieve high energy density remains paramount. To address these critical challenges, herein, we present a facile methodology for fabricating self-standing, 50 μm thick, porous LLZO membranes with a small pore size of ca. 2.3 μm and an average porosity of 51%, resulting in a specific surface area of 1.3 μm-1, the highest reported to date. The use of such LLZO membranes significantly increases the Li/LLZO contact area, effectively mitigating void formation. This methodology combines two key elements: (i) the use of small pore formers of ca. 1.5 μm and (ii) the use of ultrafast sintering, which circumvents ceramics overdensification using rapid heating/cooling rates of ca. 50 °C per second. The fabricated porous LLZO membranes demonstrate exceptional cycling stability in a symmetrical Li/LLZO/Li cell configuration, exceeding 600 h of continuous operation at a current density of 0.1 mA cm-2.

Recent Progress in Modification of Polyphenylene Oxide for Application in High-Frequency Communication

With the rapid development of highly integrated electronic devices and high-frequency microwave communication technology, the parasitic resistance-capacitance (RC) delay and propagation loss severely restrict the development of a high-frequency communication system. Benefiting from its low dielectric constants (Dk) and low dielectric loss factor (Df), polyphenylene oxide (PPO) has attracted widespread attention for its application in the dielectric layers of integrated circuits. However, PPO suffers from a very high melting viscosity, a larger coefficient of thermal expansion than copper wire and poor solvent resistance. Recently, many efforts have focused on the modification of PPO by various means for communication applications. However, review articles focusing on PPO are unexpectedly limited. In this article, the research progress concerning PPO materials in view of the modification of PPO has been summarized. The following aspects are covered: polymerization and design of special chemical structure, low molecular weight PPO and blending with thermosetting resin, hyperbranched PPO, thermosetting PPO and incorporating with fillers. In addition, the advantages and disadvantages of various types of modification methods and their applications are compared, and the possible future development directions are also proposed. It is believed that this review will arouse the interest of the electronics industry because of the detailed summary of the cutting-edge modification technology for PPO.

Thermal Conductivity Enhancement of Polymeric Composites Using Hexagonal Boron Nitride: Design Strategies and Challenges

With the integration and miniaturization of chips, there is an increasing demand for improved heat dissipation. However, the low thermal conductivity (TC) of polymers, which are commonly used in chip packaging, has seriously limited the development of chips. To address this limitation, researchers have recently shown considerable interest in incorporating high-TC fillers into polymers to fabricate thermally conductive composites. Hexagonal boron nitride (h-BN) has emerged as a promising filler candidate due to its high-TC and excellent electrical insulation. This review comprehensively outlines the design strategies for using h-BN as a high-TC filler and covers intrinsic TC and morphology effects, functionalization methods, and the construction of three-dimensional (3D) thermal conduction networks. Additionally, it introduces some experimental TC measurement techniques of composites and theoretical computational simulations for composite design. Finally, the review summarizes some effective strategies and possible challenges for the design of h-BN fillers. This review provides researchers in the field of thermally conductive polymeric composites with a comprehensive understanding of thermal conduction and constructive guidance on h-BN design.

Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer

Recently, we demonstrated the nonvolatile resistive switching effects of metal-insulator-metal (MIM) atomristor structures based on two-dimensional (2D) monolayers. However, there are many remaining combinations between 2D monolayers and metal electrodes; hence, there is a need to further explore 2D resistance switching devices from material selections to future perspectives. This study investigated the volatile and nonvolatile switching coexistence of monolayer hexagonal boron nitride (h-BN) atomristors using top and bottom silver (Ag) metal electrodes. Utilizing an h-BN monolayer and Ag electrodes, we found that the transition between volatile and nonvolatile switching is attributed to the thickness/stiffness of chain-like conductive bridges between h-BN and Ag surfaces based on the current compliance and atomristor area. Computations indicate a "weak" bridge is responsible for volatile switching, while a "strong" bridge is formed for nonvolatile switching. The current compliance determines the number of Ag atoms that undergo dissociation at the electrode, while the atomristor area determines the degree of electric field localization that forms more stable conductive bridges. The findings of this study suggest that the h-BN atomristor using Ag electrodes shows promise as a potential solution to integrate both volatile neurons and nonvolatile synapses in a single neuromorphic crossbar array structure through electrical and dimensional designs.

Theoretical insights into the structural, electronic and thermoelectric properties of the inorganic biphenylene monolayer

Being motivated by a recently synthesized biphenylene carbon monolayer (BPN), using first principles methods, we have studied its inorganic analogue (B-N analogue) named I-BPN. A comparative study of structural, electronic and mechanical properties between BPN and I-BPN was carried out. Like BPN, the stability of I-BPN was verified in terms of formation energy, phonon dispersion calculations, and mechanical parameters (Young's modulus and Poisson's ratio). The chemical inertness of I-BPN was also investigated by adsorbing an oxygen molecule in an oxygen-rich environment. It has been found that the B-B bond favours the oxygen molecule to be adsorbed through chemisorption. The lattice transport properties reveal that the phonon thermal conductivity of I-BPN is ten times lower than that of BPN. The electronic band structure reveals that I-BPN is a semiconductor with an indirect bandgap of 1.88 eV, while BPN shows metallic behaviour. In addition, we investigated various thermoelectric properties of I-BPN for possible thermoelectric applications. The thermoelectric parameters, such as the Seebeck coefficient, show the highest peak value of 0.00289 V K-1 at 300 K. Electronic transport properties reveal that I-BPN is highly anisotropic along the x and y-axes. Furthermore, the thermoelectric power factor as a function of chemical potential shows a peak value of 0.057 W m-1 K-2 along the x-axis in the p-type doping region. The electronic figure of merit shows a peak value of approximately unity. However, considering lattice thermal conductivity, the peak value of the total figure of merit (ZT) reduces to 0.68(0.46) for p-type and 0.56(0.48) for n-type doping regions along the x(y) direction at 900 K. It is worth noting that our calculated ZT value of I-BPN is higher than that of many other reported B-N composite materials.

Application and Development of Smart Thermally Conductive Fiber Materials

In recent years, with the rapid advancement in various high-tech technologies, efficient heat dissipation has become a key issue restricting the further development of high-power-density electronic devices and components. Concurrently, the demand for thermal comfort has increased; making effective personal thermal management a current research hotspot. There is a growing demand for thermally conductive materials that are diversified and specific. Therefore, smart thermally conductive fiber materials characterized by their high thermal conductivity and smart response properties have gained increasing attention. This review provides a comprehensive overview of emerging materials and approaches in the development of smart thermally conductive fiber materials. It categorizes them into composite thermally conductive fibers filled with high thermal conductivity fillers, electrically heated thermally conductive fiber materials, thermally radiative thermally conductive fiber materials, and phase change thermally conductive fiber materials. Finally, the challenges and opportunities faced by smart thermally conductive fiber materials are discussed and prospects for their future development are presented.

Unraveling the Photoluminescence Properties of a Boron Nitride Nanosheet Dispersed in Different Solvents and Its Application to Generate White Light

Hexagonal boron nitride (h-BN) is an influential 2D nanomaterial; however, its practical optoelectronic applications rely primarily on controlling the structural defects. The photoluminescence depends explicitly on the developed vacancies and substitutional defects. The present work utilizes the concept of facile liquid-phase exfoliation of hexagonal (h) boron nitride (BN) powder in common organic solvents and cosolvent mixtures to obtain a layered boron nitride nanosheet (BNNS). Although the literature concerning the layered structure of BNNS obtained by different methods is substantial, what is lacking is a detailed photoluminescence study of the layered structure obtained by changing the solvent and cosolvent mixtures, and here lies the novelty of our work. The obtained layered structure was subjected to a detailed photoluminescence study by varying the temperature. We tried to correlate how the defects originating upon changing the solvent and cosolvent affected the photoluminescence of the layered BNNS. The obtained layered structure is suitably supported by optical and electron microscopy images. High-resolution transmission electron microscopy confirm the presence of a few layers, and X-ray photoelectron spectroscopy studies give an idea of the atomic composition of the obtained BNNS. The photoluminescence properties of the obtained BNNS in water were modulated by the addition of two different classes of block copolymers, e.g., Pluronic (F-68, P-407, and P-123) and Tetronic (T-904, T-908, and T-90R4) copolymers. As an application, we were successful in constructing a nanocomposite material made up of a BNNS-copolymer-organic fluorophore to check the possibilities of generating white light.

Boron and Nitrogen Isotope Effects on Hexagonal Boron Nitride Properties

The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising 2D material for electronic, optoelectronic, nanophotonic, and quantum devices. Here, the changes in hBN's properties induced by isotopic purification in both boron and nitrogen are reported. Previous studies on isotopically pure hBN have focused on purifying the boron isotope concentration in hBN from its natural concentration (≈20 at% 10 B, 80 at% 11 B) while using naturally abundant nitrogen (99.6 at% 14 N, 0.4 at% 15 N), that is, almost pure 14 N. In this study, the class of isotopically purified hBN crystals to 15 N is extended. Crystals in the four configurations, namely h10 B14 N, h11 B14 N, h10 B15 N, and h11 B15 N, are grown by the metal flux method using boron and nitrogen single isotope (> 99%) enriched sources, with nickel plus chromium as the solvent. In-depth Raman and photoluminescence spectroscopies demonstrate the high quality of the monoisotopic hBN crystals with vibrational and optical properties of the 15 N-purified crystals at the state-of-the-art of currently available 14 N-purified hBN. The growth of high-quality h10 B14 N, h11 B14 N, h10 B15 N, and h11 B15 N opens exciting perspectives for thermal conductivity control in heat management, as well as for advanced functionalities in quantum technologies.

Konjac glucomannan-based aerogels with excellent thermal stability and flame retardancy for thermal insulation application

Biomass aerogels are a promising kind of environment-friendly thermal insulation material. However, the flammability, poor water resistance, and thermal instability of biomass aerogels limit their applications. Herein, freeze-drying and thermal imidization were used to create konjac glucomannan (KGM), boron nitride (BN), and polyimide (PI)-based aerogels with a semi-interpenetrating network structure. The introduction of BN was beneficial to improve the mechanical properties and thermal stability of aerogels. The imidization process of PI improved the hydrophobicity, mechanical property, and flame retardancy of the aerogels. The synergistic effect of PI and BN reduced the peak heat release rate and total heat release rate of KGM-based aerogel by 55.8 % and 35 %, respectively, and endowed aerogel with good self-extinguishing performance. Moreover, the results of thermal conductivity and infrared thermal imaging demonstrated that the aerogels had excellent thermal insulation properties, and could effectively manage thermal energy over a wide range of temperatures. This study provides a simple method for the preparation of heat-insulating aerogel with high fire safety, which has broad application prospects in the field of energy saving and emission reduction.

Phonon thermal transport in ferroelectricα-In2Se3 via first-principles calculations

Two-dimensional (2D) ferroelectrics are promising candidates in the field of microelectronics due to their unique properties such as excellent photoelectric responsiveness. However, the thermal properties of 2D ferroelectrics are less investigated. Here, the thickness dependent thermal conductivity in ferroelectricα-In2Se3is systematically investigated by the first-principles method combined with the phonon Boltzmann transport equation. On this basis, the strain and oxidation effects on the thermal conductivity of monolayerα-In2Se3is further studied. The calculation results show that the thermal conductivity has a significant reduction with decreasing film thickness or increasing tensile strain, and the anharmonic phonon-phonon scattering rate is the intrinsic mechanism for the reduction in thermal conductivity. On the other hand, the replacement of Se atoms by O atoms can achieve a bidirectional and wide-range (12×) tuning of thermal conductivity. The increase in specific heat and phonon group velocity is responsible for the thermal conductivity enhancement at high doping levels while that in phonon-phonon scattering rate is responsible for the thermal conductivity reduction at low doping levels. In all cases, acoustic phonons dominate the in-plane thermal transport behavior. These findings broaden our understanding of phonon transport and its control in ferroelectric semiconductorα-In2Se3.

Flexible and Robust Functionalized Boron Nitride/Poly(p-Phenylene Benzobisoxazole) Nanocomposite Paper with High Thermal Conductivity and Outstanding Electrical Insulation

With the rapid development of 5G information technology, thermal conductivity/dissipation problems of highly integrated electronic devices and electrical equipment are becoming prominent. In this work, "high-temperature solid-phase & diazonium salt decomposition" method is carried out to prepare benzidine-functionalized boron nitride (m-BN). Subsequently, m-BN/poly(p-phenylene benzobisoxazole) nanofiber (PNF) nanocomposite paper with nacre-mimetic layered structures is prepared via sol-gel film transformation approach. The obtained m-BN/PNF nanocomposite paper with 50 wt% m-BN presents excellent thermal conductivity, incredible electrical insulation, outstanding mechanical properties and thermal stability, due to the construction of extensive hydrogen bonds and π-π interactions between m-BN and PNF, and stable nacre-mimetic layered structures. Its λ∥ and λ⊥ are 9.68 and 0.84 W m-1 K-1, and the volume resistivity and breakdown strength are as high as 2.3 × 1015 Ω cm and 324.2 kV mm-1, respectively. Besides, it also presents extremely high tensile strength of 193.6 MPa and thermal decomposition temperature of 640 °C, showing a broad application prospect in high-end thermal management fields such as electronic devices and electrical equipment.

The intrinsically low lattice thermal conductivity of monolayer T-Au6X2 (X = S, Se and Te)

Thermal conductivity (κ, which consists of electronic thermal conductivity κe and lattice thermal conductivity κl), as an essential parameter in thermal management applications, is a critical physical quantity to measure the heat transfer performance of materials. To seek low-κ materials for heat-related applications, such as thermoelectric materials and thermal barrier coatings. In this study, based on a complex cluster design, we report a new class of two-dimensional (2D) transition metal dichalcogenides (TMDs): T-Au6X2 (X = S, Se, and Te) with record ultralow κl values. At room temperature, the κl values of T-Au6S2, T-Au6Se2, and T-Au6Te2 are 0.25 (0.23), 0.30 (0.21), and 0.12 (0.10) W m-1 K-1 along the x-axis (y-axis) direction, respectively, exhibiting good thermal insulation. The ultralow κl originates from strong phonon softening and suppression, especially for the phonon with frequency 0-1 THz. In addition, T-Au6Te2 holds the lowest group velocity and phonon relaxation time among the three T-Au6X2 monolayers. Our study provides an alternative approach for achieving ultralow κl through complex cluster replacement. Meanwhile, this new class of TMDs is expected to shine in thermal insulation and thermoelectricity due to their ultralow κl values.

Optimizing thermoelectric performance of carbon-doped h-BN monolayers through tuning carrier concentrations and magnetic field

The thermoelectric properties of carbon-doped monolayer hexagonal boron nitride (h-BN) are studied using a tight-binding model employing Green function approach and the Kubo formalism. Accurate tight-binding parameters are obtained to achieve excellent fitting with Density Functional Theory results for doped h-BN structures with impurity type and concentration. The influence of carbon doping on the electronic properties, electrical conductivity, and heat capacity of h-BN is studied, especially under an applied magnetic field. Electronic properties are significantly altered by doping type, concentration, and magnetic field due to subband splitting, merging of adjacent subbands, and band gap reduction. These modifications influence the number, location, and magnitude of DOS peaks, generating extra peaks inside the band gap region. Heat capacity displays pronounced dependence on both magnetic field and impurity concentration, exhibiting higher intensity at lower dopant levels. Electrical conductivity is increased by double carbon doping compared to single doping, but is reduced at high magnetic fields because of high carrier scattering. The electronic figure of merit ZT increases with lower impurity concentration and is higher for CB versus CN doping at a given field strength. The power factor can be improved by increasing magnetic field and decreasing doping concentration. In summary, controlling doping and magnetic field demonstrates the ability to effectively engineer the thermoelectric properties of monolayer h-BN.

Review of two-dimensional nanomaterials in tribology: Recent developments, challenges and prospects

From our ordinary lives to various mechanical systems, friction and wear are often unavoidable phenomena that are heavily responsible for excessive expenditures of nonrenewable energy, the damages and failures of system movement components, as well as immense economic losses. Thus, achieving low friction and high anti-wear performance is critical for minimization of these adverse factors. Two-dimensional (2D) nanomaterials, including transition metal dichalcogenides, single elements, transition metal carbides, nitrides and carbonitrides, hexagonal boron nitride, and metal-organic frameworks have attracted remarkable interests in friction and wear reduction of various applications, owing to their atomic-thin planar morphologies and tribological potential. In this paper, we systematically review the current tribological progress on 2D nanomaterials when used as lubricant additives, reinforcement phases in the coatings and bulk materials, or a major component of superlubricity system. Additionally, the conclusions and prospects on 2D nanomaterials with the existing drawbacks, challenges and future direction in such tribological fields are briefly provided. Finally, we sincerely hope such a review will offer valuable lights for 2D nanomaterial-related researches dedicated on tribology in the future.

Enhanced far-field coherent thermal emission using mid-infrared bilayer metasurfaces

A classical thermal source, such as an incandescent filament, radiates according to Planck's law. The feasibility of super-Planckian radiation has been investigated with sub-wavelength-sized sources in the last decade. In such sources, a crystal-dependent coupling of photons and optical phonons is possible at thermal energies corresponding to that at room temperature. This interaction can be used to tailor the far-field thermal emission in a coherent manner; however, understanding heat transfer during this process is still nascent. Here, we used a novel measurement platform to quantify thermal signals in a Ge2Sb2Te5/SiO2 nanoribbon structure. We were able to separate and quantify the radiated and conducted heat transfer mechanisms. The thermal emission from the Ge2Sb2Te5/SiO2 nanoribbons was enhanced by 3.5× compared to that of a bare SiO2 nanoribbon. Our model revealed that this enhancement was directly due to polaritonic heat transfer, which was possible due to the large and lossless dielectric permittivity of Ge2Sb2Te5 at mid-IR frequencies. This study directly probes the far-field emission with a thermal gradient stimulated by Joule heating in temperature ranges from 100 to 400 K, which bridges the gap between mid-IR optics and thermal engineering.

Thermal Transport and Rheological Properties of Hybrid Nanofluids Based on Vegetable Lubricants

Nanofluids based on vegetal oil with different wt.% of carbon nanotubes (CNT), hexagonal boron nitride (h-BN), and its hybrid (h-BN@CNT) were produced to investigate the effects of these nano-additives on the thermal conductivity and rheological properties of nanofluids. Stable suspensions of these oil/nanostructures were produced without the use of stabilizing agents. The dispersed nanostructures were investigated by SEM, EDS, XRD, and XPS, while the thermal conductivity and rheological characteristics were studied by a transient hot-wire method and steady-state flow tests, respectively. Increases in thermal conductivity of up to 39% were observed for fluids produced with 0.5 wt.% of the hybrid nanomaterials. As for the rheological properties, it was verified that both the base fluid and the h-BN suspensions exhibited Newtonian behavior, while the presence of CNT modified this tendency. This change in behavior is attributed to the hydrophobic character of both CNT and the base oil, while h-BN nanostructures have lip-lip "bonds", giving it a partial ionic character. However, the combination of these nanostructures was fundamental for the synergistic effect on the increase of thermal conductivity with respect to their counterparts.

2D Materials in the Display Industry: Status and Prospects

With advances in flexible electronics, innovative foldable, rollable, and stretchable displays have been developed to maintain their performance under various deformations. These flexible devices can develop more innovative designs than conventional devices due to their light weight, high space efficiency, and practical convenience. However, developing flexible devices requires material innovation because the devices must be flexible and exhibit desirable electrical insulating/semiconducting/metallic properties. Recently, emerging 2D materials such as graphene, hexagonal boron nitride, and transition metal dichalcogenides have attracted considerable research attention because of their outstanding electrical, optical, and mechanical properties, which are ideal for flexible electronics. The recent progress and challenges of 2D material growth and display applications are reviewed and perspectives for exploring 2D materials for display applications are discussed.

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Large-area epitaxial growth of III-V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1×109cm-2is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO2/Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm-2/(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III-V thin films on van der Waals substrates.

Effect of Twist Angle on Interfacial Thermal Transport in Two-Dimensional Bilayers

Advances in two-dimensional (2D) devices require innovative approaches for manipulating transport properties. Analogous to the electrical and optical responses, it has been predicted that thermal transport across 2D materials can have a similar strong twist-angle dependence. Here, we report experimental evidence deviating from this understanding. In contrast to the large tunability in electrical transport, we measured an unexpected weak twist-angle dependence of interfacial thermal transport in MoS2 bilayers, which is consistent with theoretical calculations. More notably, we confirmed the existence of distinct regimes with weak and strong twist-angle dependencies for thermal transport, where, for example, a much stronger change with twist angles is expected for graphene bilayers. With atomic simulations, the distinct twist-angle effects on different 2D materials are explained by the suppression of long-wavelength phonons via the moiré superlattice. These findings elucidate the unique feature of 2D thermal transport and enable a new design space for engineering thermal devices.

Effective Surface Modification of 2D MXene toward Thermal Energy Conversion and Management

Thermal energy management is a crucial aspect of many research developments, such as hybrid and soft electronics, aerospace, and electric vehicles. The selection of materials is of critical importance in these applications to manage thermal energy effectively. From this perspective, MXene, a new type of 2D material, has attracted considerable attention in thermal energy management, including thermal conduction and conversion, owing to its unique electrical and thermal properties. However, tailored surface modification of 2D MXenes is required to meet the application requirements or overcome specific limitations. Herein, a comprehensive review of surface modification of 2D MXenes for thermal energy management is discussed. First, this work discusses the current progress in the surface modification of 2D MXenes, including termination with functional groups, small-molecule organic compound functionalization, and polymer modification and composites. Subsequently, an in situ analysis of surface-modified 2D MXenes is presented. This is followed by an overview of the recent progress in the thermal energy management of 2D MXenes and their composites, such as Joule heating, heat dissipation, thermoelectric energy conversion, and photothermal conversion. Finally, some challenges facing the application of 2D MXenes are discussed, and an outlook on surface-modified 2D MXenes is provided.

Stacking-Controlled Growth of rBN Crystalline Films with High Nonlinear Optical Conversion Efficiency up to 1

Nonlinear optical crystals lie at the core of ultrafast laser science and quantum communication technology. The emergence of 2D materials provides a revolutionary potential for nonlinear optical crystals due to their exceptionally high nonlinear coefficients. However, uncontrolled stacking orders generally induce the destructive nonlinear response due to the optical phase deviation in different 2D layers. Therefore, conversion efficiency of 2D nonlinear crystals is typically limited to less than 0.01% (far below the practical criterion of >1%). Here, crystalline films of rhombohedral boron nitride (rBN) with parallel stacked layers are controllably synthesized. This success is realized by the utilization of vicinal FeNi (111) single crystal, where both the unidirectional arrangement of BN grains into a single-crystal monolayer and the continuous precipitation of (B,N) source for thick layers are guaranteed. The preserved in-plane inversion asymmetry in rBN films keeps the in-phase second-harmonic generation field in every layer and leads to a record-high conversion efficiency of 1% in the whole family of 2D materials within the coherence thickness of only 1.6 µm. The work provides a route for designing ultrathin nonlinear optical crystals from 2D materials, and will promote the on-demand fabrication of integrated photonic and compact quantum optical devices.

In-plane and out-of-plane excitonic coupling in 2D molecular crystals

Understanding the nature of molecular excitons in low-dimensional molecular solids is of paramount importance in fundamental photophysics and various applications such as energy harvesting, switching electronics and display devices. Despite this, the spatial evolution of molecular excitons and their transition dipoles have not been captured in the precision of molecular length scales. Here we show in-plane and out-of-plane excitonic evolution in quasilayered two-dimensional (2D) perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) crystals assembly-grown on hexagonal boron nitride (hBN) crystals. Complete lattice constants with orientations of two herringbone-configured basis molecules are determined with polarization-resolved spectroscopy and electron diffraction methods. In the truly 2D limit of single layers, two Frenkel emissions Davydov-split by Kasha-type intralayer coupling exhibit energy inversion with decreasing temperature, which enhances excitonic coherence. As the thickness increases, the transition dipole moments of newly emerging charge transfer excitons are reoriented because of mixing with the Frenkel states. The current spatial anatomy of 2D molecular excitons will inspire a deeper understanding and groundbreaking applications of low-dimensional molecular systems.

Laser-Induced Phase Transition and Patterning of hBN-Encapsulated MoTe2

Transition metal dichalcogenides exhibit phase transitions through atomic migration when triggered by various stimuli, such as strain, doping, and annealing. However, since atomically thin 2D materials are easily damaged and evaporated from these strategies, studies on the crystal structure and composition of transformed 2D phases are limited. Here, the phase and composition change behavior of laser-irradiated molybdenum ditelluride (MoTe₂ ) in various stacked geometry are investigated, and the stable laser-induced phase patterning in hexagonal boron nitride (hBN)-encapsulated MoTe₂ is demonstrated. When air-exposed or single-side passivated 2H-MoTe₂ are irradiated by a laser, MoTe₂ is transformed into Te or Mo₃ Te₄ due to the highly accumulated heat and atomic evaporation. Conversely, hBN-encapsulated 2H-MoTe₂ transformed into a 1T' phase without evaporation or structural degradation, enabling stable phase transitions in desired regions. The laser-induced phase transition shows layer number dependence; thinner MoTe₂ has a higher phase transition temperature. From the stable phase patterning method, the low contact resistivity of 1.13 kΩ µm in 2H-MoTe₂ field-effect transistors with 1T' contacts from the seamless heterophase junction geometry is achieved. This study paves an effective way to fabricate monolithic 2D electronic devices with laterally stitched phases and provides insights into phase and compositional changes in 2D materials.

Ultra-High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics

Heat dissipation is a major limitation of high-performance electronics. This is especially important in emerging nanoelectronic devices consisting of ultra-thin layers, heterostructures, and interfaces, where enhancement in thermal transport is highly desired. Here, ultra-high interfacial thermal conductance in encapsulated van der Waals (vdW) heterostructures with single-layer transition metal dichalcogenides MX₂ (MoS₂ , WSe₂ , WS₂ ) sandwiched between two hexagonal boron nitride (hBN) layers is reported. Through Raman spectroscopic measurements of suspended and substrate-supported hBN/MX₂ /hBN heterostructures with varying laser power and temperature, the out-of-plane interfacial thermal conductance in the vertical stack is calibrated. The measured interfacial thermal conductance between MX₂ and hBN reaches 74 ± 25 MW m^-2 K^-1 , which is at least ten times higher than the interfacial thermal conductance of MX₂ in non-encapsulation structures. Molecular dynamics (MD) calculations verify and explain the experimental results, suggesting a full encapsulation by hBN layers is accounting for the high interfacial conductance. This ultra-high interfacial thermal conductance is attributed to the double heat transfer pathways and the clean and tight vdW interface between two crystalline 2D materials. The findings in this study reveal new thermal transport mechanisms in hBN/MX₂ /hBN structures and shed light on building novel hBN-encapsulated nanoelectronic devices with enhanced thermal management.

In-plane thermoelectric properties of graphene/xBN/graphene van der Waals heterostructures

2D materials have attracted broad attention from researchers for their unique electronic properties, which may be been further enhanced by combining 2D layers into vertically stacked van der Waals heterostructures (vdWHs). Among the superlative properties of 2D systems, thermoelectric (TE) energy conversion promises to enable targeted energy conversion, localized thermal management, and thermal sensing. However, TE conversion efficiency remains limited by the inherent tradeoff between conductivity and thermopower. In this paper, we use first-principles calculation to study graphene-based vdWHs composed of graphene layers and hexagonal boron nitride (h-BN). We compute the electronic band structures of heterostructured systems using Quantum Espresso and their TE properties using BoltzTrap2. Our results have shown that stacking layers of these 2D materials opens a bandgap, increasing it with the number of h-BN interlayers, which significantly improves the power factor (PF). We predict a PF of ∼1.0 × 10¹¹W K^-2m s for the vdWHs, nearly double compared to 5 × 10¹⁰W K^-2m s that we obtained for single-layer graphene. This study gives important information on the effect of stacking layers of 2D materials and points toward new avenues to optimize the TE properties of vdWHs.

Hexagonal Boron Nitride for Next-Generation Photonics and Electronics

Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of structural and optical properties of h-BN have expanded potential applications into emerging electronics and photonics fields. h-BN shows a very efficient deep-ultraviolet band-edge emission despite its indirect-bandgap nature, as well as stable room-temperature single-photon emission over a wide wavelength range, showing a great potential for next-generation photonics. In addition, h-BN is extensively being adopted as active media for low-energy electronics, including nonvolatile resistive switching memory, radio-frequency devices, and low-dielectric-constant materials for next-generation electronics.

Extraordinary Phonon Displacement and Giant Resonance Raman Enhancement in WSe2/WS2 Moiré Heterostructures

Twisted van der Waals heterostructures are known to induce surprisingly diverse and intriguing phenomena, such as correlated electronic phase and unconventional optical properties. This can be realized by controlled rotation of adjacent atomic planes, which provides an uncommon way to manipulate inelastic light-matter interactions. Here, we discover an extraordinary blue shift of 5-6 wavenumbers for high-frequency phonon modes in WS₂/WSe₂ twisted heterobilayers, captured meticulously using Raman spectroscopy. Phonon spectra displace rapidly over a subtle change in interlayer twist angle owing to heterostrain and atomic reconstruction from the Moiré pattern. First-order linear coefficients of the phonon modes in twisted heterostructures are further found to increase largely compared to their monolayer counterpart and vary immensely with the twist angle. Exceptional and extravagant enhancement of up to 50-fold is observed in the Raman vibrational intensity at a specific twist angle; this is largely influenced by the resonance process derived from a simple critical twist angle model. In addition, we depict how the resonance can be modulated by changing the thermal conditions and also the stacking angle. Therefore, our work further highlights the twist-driven phonon dynamics in pristine two-dimensional heterostructures, adding vital insight into Moiré physics and promoting comprehensive understanding of structural and optical properties in Moiré superlattices.

Thermal Transport in 2D Materials

In recent decades, two-dimensional materials (2D) such as graphene, black and blue phosphorenes, transition metal dichalcogenides (e.g., WS₂ and MoS₂), and h-BN have received illustrious consideration due to their promising properties. Increasingly, nanomaterial thermal properties have become a topic of research. Since nanodevices have to constantly be further miniaturized, thermal dissipation at the nanoscale has become one of the key issues in the nanotechnology field. Different techniques have been developed to measure the thermal conductivity of nanomaterials. A brief review of 2D material developments, thermal conductivity concepts, simulation methods, and recent research in heat conduction measurements is presented. Finally, recent research progress is summarized in this article.

Interfacial thermal conductance between atomically thin boron nitride and graphene

Atomically thin hexagonal boron nitride (BN) is a promising dielectric substrate for graphene and other two-dimensional (2D) materials for performance enhancement and heat dissipation. However, the interfacial heat conductance between atomically thin BN and graphene has not been experimentally studied yet. Here, we report that the interfacial thermal conductance between high-quality graphene and trilayer BN is 9.64 ± 2.12 MW m^-2 K^-1 in the temperature range of 293-393 K, indicating that the interfacial thermal conductance is depressed when the heterostructure thickness is smaller than the wavelength of the low-frequency phonons, e.g. ZA in BN.

Angular-Shaped Boron Nitride Nanosheets with a High Aspect Ratio to Improve the Out-of-Plane Thermal Conductivity of Polyimide Composite Films

Polyimide/boron nitride nanosheet (PI/BNNS) composite films have potential applications in the field of electrical devices due to the superior thermal conductivity and outstanding insulating properties of the boron nitride nanosheet. In this study, the boron nitride nanosheet (BNNS-t) was prepared by the template method using sodium chloride as the template, and B₂O₃ and flowing ammonia as the boron and nitrogen sources, respectively. Then, the PI/BNNS-t composite films were investigated with different loading of BNNS-t as thermally conductive fillers. The results show that BNNS-t has a high aspect ratio and a uniform lateral dimension, with a large dimension and a thin thickness, and there are a few nanosheets with angular shapes in the as-obtained BNNS-t. The synergistic effect of the above characteristics for BNNS-t is beneficial to constructing the three-dimensional heat conduction network of the PI/BNNS-t composite films, which can significantly improve the out-of-plane thermal conduction properties. And then, the out-of-plane thermal conductivity of the PI/BNNS-t composite film achieves 0.67 W m^-1 K^-1 at 40% loading, which is nearly 3.5 times that of the PI film.

Self-Modifying Nanointerface Driving Ultrahigh Bidirectional Thermal Conductivity Boron Nitride-Based Composite Flexible Films

While boron nitride (BN) is widely recognized as the most promising thermally conductive filler for rapidly developing high-power electronic devices due to its excellent thermal conductivity and dielectric properties, a great challenge is the poor vertical thermal conductivity when embedded in composites owing to the poor interfacial interaction causing severe phonon scattering. Here, we report a novel surface modification strategy called the "self-modified nanointerface" using BN nanocrystals (BNNCs) to efficiently link the interface between BN and the polymer matrix. Combining with ice-press assembly method, an only 25 wt% BN-embedded composite film can not only possess an in-plane thermal conductivity of 20.3 W m-1 K-1 but also, more importantly, achieve a through-plane thermal conductivity as high as 21.3 W m-1 K-1, which is more than twice the reported maximum due to the ideal phonon spectrum matching between BNNCs and BN fillers, the strong interaction between the self-modified fillers and polymer matrix, as well as ladder-structured BN skeleton. The excellent thermal conductivity has been verified by theoretical calculations and the heat dissipation of a CPU. This study provides an innovative design principle to tailor composite interfaces and opens up a new path to develop high-performance composites.

A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers

Two-dimensional (2D) materials have enabled promising applications in modern miniaturized devices. However, device operation may lead to substantial temperature rise and thermal stress, resulting in device failure. To address such thermal challenges, the thermal expansion coefficient (TEC) needs to be well understood. Here, we characterize the in-plane TECs of transition metal dichalcogenide (TMD) monolayers and demonstrate superior accuracy using a three-substrate approach. Our measurements confirm the physical range of 2D monolayer TECs and, hence, address the more than two orders of magnitude discrepancy in literature. Moreover, we identify the thermochemical electronegativity difference of compositional elements as a descriptor, enabling the fast estimation of TECs for various TMD monolayers. Our work presents a unified approach and descriptor for the thermal expansion of TMD monolayers, which can serve as a guideline toward the rational design of reliable 2D devices.

Combined effect of stacking and magnetic field on the electrical conductivity and heat capacity of biased trilayer BP and BN

In this paper, the Kubo-Greenwood formula based on the tight-binding model is used to investigate the effects of the bias voltage and magnetic field on the electrical conductivity and heat capacity of the trilayer BP and BN with energy-stable stacking structures. The results show that electronic and thermal properties of the selected structures can be significantly modified by external fields. The position and intensity of DOS peaks and the band gap of selected structures are affected by the external fields. When external fields increases above critical value, the band gap decreases to zero and semiconductor-metallic transition occurs. The results show that the thermal properties of the BP and BN structures are zero in TZ temperature region and increase by temperature above TZ. The increasing rate for thermal properties depends on the stacking configuration and changes with the bias voltage and magnetic field. In the presence of the stronger field, the TZ region decreases below 100 K. Compared to the BP structures, the BN types with larger band gap has smaller electrical conductivity which can be increased in order to 3L-BP by applying the stronger magnetic field or bias voltage. These results are interesting for the future development of nanoelectronic devices.

Application of 2D Materials for Adsorptive Removal of Air Pollutants

Air pollution is on the priority list of global safety issues, with the concern of fatal environmental and public health deterioration. 2D materials are potential adsorbent materials for environmental decontamination, owing to their high surface area, manageable interlayer binding, large surface-to-volume ratio, specific binding capability, and chemical, thermal, and mechanistic stability. Specifically, graphene oxide and reduced graphene oxide have been attracting attention, taking advantage of their low cost synthesis, excessive oxygen containing surface functionalities, and intrinsic aqueous dispersibility, making them desirable for the development of cost-effective, high performance air filters. Many different material designs have been proposed to expand their filtration capability, including the functionalization and integration with other metals and metal oxides, which act not only as binding agents to the target pollutants but also as antimicrobial agents. This review highlights the advantages and drawbacks of 2D materials for air filtration and summarizes the interrelationships among various strategies and the resultant filtration performance in terms of structural engineering, morphology control, and material compositions. Finally, potential future directions are suggested toward the idealized designs of 2D material based air filters.

Wrinkle-mediated CVD synthesis of wafer scale Graphene/h-BN heterostructures

The combination of two-dimensional materials (2D) into heterostructures enables their integration in tunable ultrathin devices. For applications in electronics and optoelectronics, direct growth of wafer-scale and vertically stacked graphene/hexagonal boron nitride (h-BN) heterostructures is vital. The fundamental problem, however, is the catalytically inert nature of h-BN substrates, which typically provide a low rate of carbon precursor breakdown and consequently a poor rate of graphene synthesis. Furthermore, out-of-plane deformations such as wrinkles are commonly seen in 2D materials grown by chemical vapor deposition (CVD). Herein, a wrinkle-facilitated route is developed for the fast growth of graphene/h-BN vertical heterostructures on Cu foils. The key advantage of this synthetic pathway is the exploitation of the increased reactivity from inevitable line defects arising from the CVD process, which can act as active sites for graphene nucleation. The resulted heterostructures are found to exhibit superlubric properties with increased bending stiffness, as well as directional electronic properties, as revealed from atomic force microscopy measurements. This work offers a brand-new route for the fast growth of Gr/h-BN heterostructures with practical scalability, thus propelling applications in electronics and nanomechanical systems.

Design and finite element modeling of two-dimensional nanomechanical biosensors for SARS-CoV-2 detection

SARS-CoV-2 is the causative agent of COVID-19 disease. The development of different variants has increased the prevalence, pathogenicity, and mortality of the SARS-CoV-2. Prompt diagnosis and timely initiation of therapy can undoubtedly minimize the damage caused by this virus. In this study, a wide range of emerging single layer two-dimensional materials (SL2DMs), including graphene, grapheme oxide (GO), reduced graphene oxide (rGO), hexagonal boron nitride (h-BN), Ti3C2Tx MXene, and MoS2that can be used to fabricate highly sensitive biosensors, are analyzed using the finite element method based on antigen-antibody interaction. Important design parameters including sensor size, sensor aspect ratio, number of viruses, and applying in-plane strain on sensor performance are analyzed using frequency shift technique. In the following, an analytical relationship that can predict the limit of detection (LOD) according to the above parameters is proposed. The results show that all the above materials have a good performance in detecting viruses in the sample range of 10-100 viruses. This range can be reduced significantly by applying strains of less than 0.1. Also, applying strain increases shift frequency index by 2 to 3 times, which is a significant result. The maximum and minimum sensor performance are obtained for GO and Ti3C2Tx, respectively. The results of this paper can be used to build a new generation of two-dimensional biosensors for rapid detection of COVID-19 and other viruses.

Direct growth of hBN/Graphene heterostructure via surface deposition and segregation for independent thickness regulation

Hexagonal boron nitride/graphene (hBN/G) vertical heterostructures have attracted extensive attention, owing to the unusual physical properties for basic research and electronic device applications. Here we report a facile deposition-segregation technique to synthesize hBN/G heterostructures on recyclable platinum (Pt) foil via low pressure chemical vapor deposition. The growth mechanism of the vertical hBN/G is demonstrated to be the surface deposition of hBN on top of the graphene segregated from the Pt foil with pre-dissolved carbon. The thickness of hBN and graphene can be controlled separately from sub-monolayer to multilayer through the fine control of the growth parameters. Further investigations by Raman, scanning Kelvin probe microscopy and transmission electron microscope show that the hBN/G inclines to form a heterostructure with strong interlayer coupling and with interlayer twist angle smaller than 1.5°. This deposition-segregation approach paves a new pathway for large-scale production of hBN/G heterostructures and could be applied to synthesize of other van der Waals heterostructures.

How Hydrodynamic Phonon Transport Determines the Convergence of Thermal Conductivity in Two-Dimensional Materials

The phonon Boltzmann transport equation combined with first-principles calculation has achieved great success in exploring the lattice thermal conductivity (κ) of various materials. However, the convergence of the predicted κ is a critical issue, leading to quite scattered results recorded in the literature, even for the same material. In this paper, we explore the origin for the convergence of thermal conductivity in two-dimensional (2D) materials. Two kinds of typical 2D materials, graphene and silicene, are studied, and the bulk silicon is also compared as a control system for a three-dimensional material. The effect of the cutoff radius (rc) in the third-order interatomic force constants on κ is studied for these three materials. It is found that that κ of these three materials exhibits diverse convergence behaviors with respect to rc, which coincides very well with the strength of hydrodynamic phonon transport. By further analyzing the phonon lifetime and scattering rates, we reveal that the dominance of the normal scattering process gives rise to the hydrodynamic phonon transport in both graphene and silicene, which results in long-range interaction and a large lifetime of low-frequency flexural acoustic phonons, while the same phenomenon is absent in bulk silicon. Our study highlights the importance of long-range interaction associated with hydrodynamic phonon transport in determining the thermal conductivity of 2D materials.