1
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Lin K, Li Y, Ghorbani-Asl M, Sofer Z, Winnerl S, Erbe A, Krasheninnikov AV, Helm M, Zhou S, Dan Y, Prucnal S. Probing the Band Splitting near the Γ Point in the van der Waals Magnetic Semiconductor CrSBr. J Phys Chem Lett 2024; 15:6010-6016. [PMID: 38814350 DOI: 10.1021/acs.jpclett.4c00968] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
This study investigates the electronic band structure of chromium sulfur bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis on the PL data robustly unveils energy splittings, band gaps, and excitonic transitions across different thicknesses of CrSBr, from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the Néel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal splitting in both the conduction and valence bands but also highlight a significant advance in our understanding of the interplay between the optical, electronic, and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals.
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Affiliation(s)
- Kaiman Lin
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, 20024 Shanghai, P. R. China
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Yi Li
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- TU Dresden, 01062 Dresden, Germany
| | - Mahdi Ghorbani-Asl
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Zdenek Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 16628 Prague 6, Czech Republic
| | - Stephan Winnerl
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Artur Erbe
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- TU Dresden, 01062 Dresden, Germany
| | - Arkady V Krasheninnikov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- TU Dresden, 01062 Dresden, Germany
| | - Shengqiang Zhou
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Yaping Dan
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, 20024 Shanghai, P. R. China
| | - Slawomir Prucnal
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
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2
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Chaluvadi SK, Chalil SP, Jana A, Dagur D, Vinai G, Motti F, Fujii J, Mezhoud M, Lüders U, Polewczyk V, Vobornik I, Rossi G, Bigi C, Hwang Y, Olsen T, Orgiani P, Mazzola F. Uncovering the Lowest Thickness Limit for Room-Temperature Ferromagnetism of Cr 1.6Te 2. NANO LETTERS 2024. [PMID: 38870328 DOI: 10.1021/acs.nanolett.4c01005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
Metallic ferromagnetic transition metal dichalcogenides have emerged as important building blocks for scalable magnetic and memory applications. Downscaling such systems to the ultrathin limit is critical to integrate them into technology. Here, we achieved layer-by-layer control over the transition metal dichalcogenide Cr1.6Te2 by using pulsed laser deposition, and we uncovered the minimum critical thickness above which room-temperature magnetic order is maintained. The electronic and magnetic structures are explored experimentally and theoretically, and it is shown that the films exhibit strong in-plane magnetic anisotropy as a consequence of large spin-orbit effects. Our study elucidates both magnetic and electronic properties of Cr1.6Te2 and corroborates the importance of intercalation to tune the magnetic properties of nanoscale materials' architectures.
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Affiliation(s)
| | - Shyni Punathum Chalil
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
- International Centre for Theoretical Physics (ICTP), Str. Costiera 11, I-34151 Trieste, Italy
| | - Anupam Jana
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
- International Centre for Theoretical Physics (ICTP), Str. Costiera 11, I-34151 Trieste, Italy
| | - Deepak Dagur
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
- Department of Physics, University of Trieste, Via Alfonso Valerio 2, 34127 Trieste, Italy
| | - Giovanni Vinai
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
| | - Federico Motti
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
| | - Jun Fujii
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
| | - Moussa Mezhoud
- CRISMAT Normandie Univ ENSICAEN UNICAEN CNRS CRISMAT, 14000 Caen, France
| | - Ulrike Lüders
- CRISMAT Normandie Univ ENSICAEN UNICAEN CNRS CRISMAT, 14000 Caen, France
| | - Vincent Polewczyk
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
- Groupe d'Etude de la Matière Condensée (UMR 8635), Université deVersailles Saint-Quentin en Yvelines & CNRS, 78035 Versailles, France
| | - Ivana Vobornik
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
| | - Giorgio Rossi
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
- Dipartimento di Fisica, Università degli studi di Milano, IT-20133 Milano, Italy
| | - Chiara Bigi
- Synchrotron SOLEIL, F-91190 Saint-Aubin, France
| | - Younghun Hwang
- Electricity and Electronics and Semiconductor Applications, Ulsan College, Ulsan 44610, Republic of Korea
| | - Thomas Olsen
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Pasquale Orgiani
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
| | - Federico Mazzola
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
- Department of Molecular Sciences and Nanosystems, Ca' Foscari University of Venice, I-30172 Venice, Italy
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3
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Averyanov DV, Sokolov IS, Taldenkov AN, Parfenov OE, Larionov KV, Sorokin PB, Kondratev OA, Tokmachev AM, Storchak VG. Engineering of a Layered Ferromagnet via Graphitization: An Overlooked Polymorph of GdAlSi. J Am Chem Soc 2024; 146:15761-15770. [PMID: 38825888 DOI: 10.1021/jacs.4c01472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
Layered magnets are stand-out materials because of their range of functional properties that can be controlled by external stimuli. Regretfully, the class of such compounds is rather narrow, prompting the search for new members. Graphitization─stabilization of layered graphitic structures in the 2D limit─is being discussed for cubic materials. We suggest the phenomenon to extend beyond cubic structures; it can be employed as a viable route to a variety of layered materials. Here, the idea of graphitization is put into practice to produce a new layered magnet, GdAlSi. The honeycomb material, based on graphene-like layers AlSi, is studied both experimentally and theoretically. Epitaxial films of GdAlSi are synthesized on silicon; the critical thickness for the stability of the layered polymorph is around 20 monolayers. Notably, the layered polymorph of GdAlSi demonstrates ferromagnetism, in contrast to the nonlayered, tetragonal polymorph. The ferromagnetism is further supported by electron transport measurements revealing negative magnetoresistance and the anomalous Hall effect. The results show that graphitization can be a powerful tool in the design of functional layered materials.
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Affiliation(s)
- Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia
| | - Konstantin V Larionov
- Laboratory of Digital Materials Science, National University of Science and Technology MISIS, Leninskiy prospect 4, 119049 Moscow, Russia
| | - Pavel B Sorokin
- Laboratory of Digital Materials Science, National University of Science and Technology MISIS, Leninskiy prospect 4, 119049 Moscow, Russia
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia
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4
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Tan Q, Occhialini CA, Gao H, Li J, Kitadai H, Comin R, Ling X. Observation of Three-State Nematicity and Domain Evolution in Atomically Thin Antiferromagnetic NiPS 3. NANO LETTERS 2024. [PMID: 38856662 DOI: 10.1021/acs.nanolett.4c00772] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2024]
Abstract
Nickel phosphorus trisulfide (NiPS3), a van der Waals 2D antiferromagnet, has received significant interest for its intriguing properties in recent years. However, despite its fundamental importance in the physics of low-dimensional magnetism and promising potential for technological applications, the study of magnetic domains in NiPS3 down to an atomically thin state is still lacking. Here, we report the layer-dependent magnetic characteristics and magnetic domains in NiPS3 by employing linear dichroism spectroscopy, polarized microscopy, spin-correlated photoluminescence, and Raman spectroscopy. Our results reveal the existence of the paramagnetic-to-antiferromagnetic phase transition in bulk to bilayer NiPS3 and provide evidence of the role of stronger spin fluctuations in thin NiPS3. Furthermore, our study identifies three distinct antiferromagnetic domains within atomically thin NiPS3 and captures the thermally activated domain evolution. Our findings provide crucial insights for the development of antiferromagnetic spintronics and related technologies.
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Affiliation(s)
- Qishuo Tan
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Connor A Occhialini
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hongze Gao
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Jiaruo Li
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hikari Kitadai
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Riccardo Comin
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xi Ling
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
- Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States
- The Photonics Center, Boston University, Boston, Massachusetts 02215, United States
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5
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Xie X, Ji M, Yan X, Yu Y, Wang Y, Ma N, Xing H, Tian Y. Layer-Controllable "2.5D" DNA Origami Crystals Synthesized by a Hierarchical Assembly Strategy. Angew Chem Int Ed Engl 2024; 63:e202402312. [PMID: 38578652 DOI: 10.1002/anie.202402312] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Revised: 03/30/2024] [Accepted: 04/04/2024] [Indexed: 04/06/2024]
Abstract
The finite periodic arrangement of functional nanomaterials on the two-dimensional scale enables the integration and enhancement of individual properties, making them an important research topic in the field of tuneable nanodevices. Although layer-controllable lattices such as graphene have been successfully synthesized, achieving similar control over colloidal nanoparticles remains a challenge. DNA origami technology has achieved remarkable breakthroughs in programmed nanoparticle assembly. Based on this technology, we proposed a hierarchical assembly strategy to construct a universal DNA origami platform with customized layer properties, which we called 2.5-dimensional (2.5D) DNA origami crystals. Methodologically, this strategy divides the assembly procedure into two steps: 1) array synthesis, and 2) lattice synthesis, which means that the layer properties, including layer number, interlayer distance, and surface morphology, can be flexibly customized based on the independent designs in each step. In practice, these synthesized 2.5D crystals not only pioneer the expansion of the DNA origami crystal library to a wider range of dimensions, but also highlight the technological potential for templating 2.5D colloidal nanomaterial lattices.
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Affiliation(s)
- Xiaolin Xie
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Min Ji
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Xuehui Yan
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Yifan Yu
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Yong Wang
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Ningning Ma
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Hang Xing
- Institute of Chemical Biology and Nanomedicine, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Provincial Key Laboratory of Biomacromolecular Chemical Biology, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Ye Tian
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
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6
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Grebenchuk S, McKeever C, Grzeszczyk M, Chen Z, Šiškins M, McCray ARC, Li Y, Petford-Long AK, Phatak CM, Ruihuan D, Zheng L, Novoselov KS, Santos EJG, Koperski M. Topological Spin Textures in an Insulating van der Waals Ferromagnet. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311949. [PMID: 38306214 DOI: 10.1002/adma.202311949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 01/09/2024] [Indexed: 02/04/2024]
Abstract
Generation and control of topological spin textures constitutes one of the most exciting challenges of modern spintronics given their potential applications in information storage technologies. Of particular interest are magnetic insulators, which due to low damping, absence of Joule heating and reduced dissipation can provide energy-efficient spin-textures platform. Here, it is demonstrated that the interplay between sample thickness, external magnetic fields, and optical excitations can generate a prolific paramount of spin textures, and their coexistence in insulating CrBr3 van der Waals (vdW) ferromagnets. Using high-resolution magnetic force microscopy and large-scale micromagnetic simulation methods, the existence of a large region in T-B phase diagram is demonstrated where different stripe domains, skyrmion crystals, and magnetic domains exist and can be intrinsically selected or transformed to each-other via a phase-switch mechanism. Lorentz transmission electron microscopy unveils the mixed chirality of the magnetic textures that are of Bloch-type at given conditions but can be further manipulated into Néel-type or hybrid-type via thickness-engineering. The topological phase transformation between the different magnetic objects can be further inspected by standard photoluminescence optical probes resolved by circular polarization indicative of an existence of exciton-skyrmion coupling mechanism. The findings identify vdW magnetic insulators as a promising framework of materials for the manipulation and generation of highly ordered skyrmion lattices relevant for device integration at the atomic level.
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Affiliation(s)
- Sergey Grebenchuk
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Conor McKeever
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK
| | - Magdalena Grzeszczyk
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - Zhaolong Chen
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - Makars Šiškins
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - Arthur R C McCray
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Applied Physics Program, Northwestern University, Evanston, IL, 60208, USA
| | - Yue Li
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Amanda K Petford-Long
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Charudatta M Phatak
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Duan Ruihuan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Nanyang Technological University, Singapore, 639798, Singapore
| | - Liu Zheng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Elton J G Santos
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK
- Higgs Centre for Theoretical Physics, The University of Edinburgh, Edinburgh, EH9 3FD, UK
- Donostia International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Maciej Koperski
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
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7
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Zhang X, Li Y, Lu Q, Xiang X, Sun X, Tang C, Mahdi M, Conner C, Cook J, Xiong Y, Inman J, Jin W, Liu C, Cai P, Santos EJG, Phatak C, Zhang W, Gao N, Niu W, Bian G, Li P, Yu D, Long S. Epitaxial Growth of Large-Scale 2D CrTe 2 Films on Amorphous Silicon Wafers With Low Thermal Budget. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311591. [PMID: 38426690 DOI: 10.1002/adma.202311591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Revised: 01/27/2024] [Indexed: 03/02/2024]
Abstract
2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO2) and silicon nitride (SiNx). Here, a seeded growth technique for crystallizing CrTe2 films on amorphous SiNx/Si and SiO2/Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin-orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 × 107 ℏ/2e Ω⁻¹ m⁻¹), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.
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Affiliation(s)
- Xiaoqian Zhang
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Yue Li
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Qiangsheng Lu
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
- Material Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Xueqiang Xiang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Xiaozhen Sun
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Chunli Tang
- Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, 36849, USA
| | - Muntasir Mahdi
- Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, 36849, USA
| | - Clayton Conner
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Jacob Cook
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Yuzan Xiong
- Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC, 27599, USA
| | - Jerad Inman
- Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC, 27599, USA
- Department of Physics, Oakland University, Rochester, MI, 48309, USA
| | - Wencan Jin
- Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, 36849, USA
- Department of Physics, Auburn University, Auburn, AL, 36849, USA
| | - Chang Liu
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - PeiYu Cai
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK
| | - Elton J G Santos
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK
- Higgs Centre for Theoretical Physics, The University of Edinburgh, Edinburgh, EH9 3FD, UK
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, 20018, Basque Country, Spain
| | - Charudatta Phatak
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Wei Zhang
- Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC, 27599, USA
- Department of Physics, Oakland University, Rochester, MI, 48309, USA
| | - Nan Gao
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Wei Niu
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Guang Bian
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Peng Li
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Shibing Long
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
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8
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Stepanova AV, Mironov AV, Bogach AV, Azarevich AN, Presniakov IA, Sobolev AV, Pankratov DA, Zayakhanov VA, Starchikov SS, Verchenko VY, Shevelkov AV. Bulk ferromagnetism in cleavable van der Waals telluride NbFeTe 2. Chem Commun (Camb) 2024; 60:5518-5521. [PMID: 38693880 DOI: 10.1039/d4cc01160k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/03/2024]
Abstract
A van der Waals telluride, NbFeTe2, has been synthesized using chemical vapor transport reactions. The optimized synthetic conditions yield high-quality single crystals with a novel monoclinic crystal structure. Monoclinic NbFeTe2 demonstrates a (100) cleavage plane, bulk ferromagnetism below 87 K, and a metallic ground state-the necessary prerequisites for needed spintronics technologies.
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Affiliation(s)
- Anna V Stepanova
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia.
| | - Andrei V Mironov
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia.
| | - Alexey V Bogach
- Prokhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, Russia
| | - Andrey N Azarevich
- Prokhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, Russia
| | - Igor A Presniakov
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia.
- MSU-BIT University, Shenzhen, 517182 Guangdong Province, P. R. China
| | - Alexey V Sobolev
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia.
- MSU-BIT University, Shenzhen, 517182 Guangdong Province, P. R. China
| | - Denis A Pankratov
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia.
| | | | | | - Valeriy Yu Verchenko
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia.
| | - Andrei V Shevelkov
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia.
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9
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Akatsuka S, Esser S, Okumura S, Yambe R, Yamada R, Hirschmann MM, Aji S, White JS, Gao S, Onuki Y, Arima TH, Nakajima T, Hirschberger M. Non-coplanar helimagnetism in the layered van-der-Waals metal DyTe 3. Nat Commun 2024; 15:4291. [PMID: 38769112 PMCID: PMC11106302 DOI: 10.1038/s41467-024-47127-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 03/21/2024] [Indexed: 05/22/2024] Open
Abstract
Van-der-Waals magnetic materials can be exfoliated to realize ultrathin sheets or interfaces with highly controllable optical or spintronics responses. In majority, these are collinear ferro-, ferri-, or antiferromagnets, with a particular scarcity of lattice-incommensurate helimagnets of defined left- or right-handed rotation sense, or helicity. Here, we report polarized neutron scattering experiments on DyTe3, whose layered structure has highly metallic tellurium layers separated by double-slabs of dysprosium square nets. We reveal cycloidal (conical) magnetic textures, with coupled commensurate and incommensurate order parameters, and probe the evolution of this ground state in a magnetic field. The observations are well explained by a one-dimensional spin model, with an off-diagonal on-site term that is spatially modulated by DyTe3's unconventional charge density wave (CDW) order. The CDW-driven term couples to antiferromagnetism, or to the net magnetization in an applied magnetic field, and creates a complex magnetic phase diagram indicative of competing interactions in this easily cleavable van-der-Waals helimagnet.
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Affiliation(s)
- Shun Akatsuka
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Sebastian Esser
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan.
| | - Shun Okumura
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Ryota Yambe
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Rinsuke Yamada
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Moritz M Hirschmann
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, 351-0198, Japan
| | - Seno Aji
- The Institute for Solid State Physics, The University of Tokyo, Kashiwa, 277-8581, Japan
- Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Indonesia, Depok, 16424, Indonesia
| | - Jonathan S White
- Laboratory for Neutron Scattering and Imaging (LNS), Paul Scherrer Institute (PSI), 5232, Villigen, Switzerland
| | - Shang Gao
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Yoshichika Onuki
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, 351-0198, Japan
| | - Taka-Hisa Arima
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, 351-0198, Japan
- Department of Advanced Materials Science, The University of Tokyo, Kashiwa, 277-8561, Japan
| | - Taro Nakajima
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, 351-0198, Japan
- The Institute for Solid State Physics, The University of Tokyo, Kashiwa, 277-8581, Japan
| | - Max Hirschberger
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan.
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, 351-0198, Japan.
- Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan.
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10
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Wang C, Wan S, Wang Y, Shi F, Gong M, Zeng H. Imaging the Magnetic Anisotropy in Ultrathin Fe 4GeTe 2 with a Nitrogen-Vacancy Magnetometer. NANO LETTERS 2024; 24:5754-5760. [PMID: 38708987 DOI: 10.1021/acs.nanolett.4c00795] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2024]
Abstract
Two-dimensional (2D) FenGeTe2, with n = 3, 4, and 5, has been realized in experiments, showing strong magnetic anisotropy with enhanced critical temperature (Tc). The understanding of its magnetic anisotropy is crucial for the exploration of more stable 2D magnets and its spintronic applications. Here, we report a quantitative reconstruction of the magnetization magnitude and its direction in ultrathin Fe4GeTe2 using nitrogen vacancy centers. Through imaging stray magnetic fields, we identified the spin-flop transition at approximately 80 K, resulting in a change of the easy axis from the out-of-plane direction to the in-plane direction. Moreover, by analyzing the thermally activated escape behavior of the magnetization near Tc in terms of the Ginzburg-Landau model, we observed the in-plane magnetic anisotropy effect and the formation capability of magnetic domains at ∼0.4 μm2 μT-1. Our findings contribute to the quantitative understanding of the magnetic anisotropy effect in a vast range of 2D van der Waals magnets.
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Affiliation(s)
- Chen Wang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, People's Republic of China
| | - Siyuan Wan
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, People's Republic of China
| | - Ya Wang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, People's Republic of China
| | - Fazhan Shi
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, People's Republic of China
| | - Ming Gong
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, People's Republic of China
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, People's Republic of China
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11
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Yang X, Xie X, Yang W, Wang X, Li M, Zheng F. Stacking-dependent interlayer magnetic interactions in CrSe 2. NANOTECHNOLOGY 2024; 35:305709. [PMID: 38648740 DOI: 10.1088/1361-6528/ad4156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Accepted: 04/22/2024] [Indexed: 04/25/2024]
Abstract
Recently, CrSe2, a new ferromagnetic van der Waals two-dimensional material, was discovered to be highly stable under ambient conditions, making it an attractive candidate for fundamental research and potential device applications. Here, we study the interlayer interactions of bilayer CrSe2using first-principles calculations. We demonstrate that the interlayer interaction depends on the stacking structure. The AA and AB stackings exhibit antiferromagnetic (AFM) interlayer interactions, while the AC stacking exhibits ferromagnetic (FM) interlayer interaction. Furthermore, the interlayer interaction can be further tuned by tensile strain and charge doping. Specifically, under large tensile strain, most stacking structures exhibit FM interlayer interactions. Conversely, under heavy electron doping, all stacking structures exhibit AFM interlayer interactions. These findings are useful for designing spintronic devices based on CrSe2.
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Affiliation(s)
- Xinlong Yang
- Center for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xiaoyang Xie
- Center for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Wenqi Yang
- Center for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xiaohui Wang
- Beijing Key Laboratory of Optical Detection Technology for Oil and Gas, China University of Petroleum-Beijing, Beijing, 102249, People's Republic of China
| | - Menglei Li
- Department of Physics, Capital Normal University, Beijing 100048, People's Republic of China
| | - Fawei Zheng
- Center for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
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12
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Yu Y, Cheng M, Tao Z, Han W, Du G, Guo Y, Shi J, Chen Y. Phase-Modulated Elastic Properties of 2D Magnetic FeTe: Hexagonal and Tetragonal Polymorphs. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308357. [PMID: 38050942 DOI: 10.1002/smll.202308357] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2023] [Revised: 11/01/2023] [Indexed: 12/07/2023]
Abstract
2D layered magnets, such as iron chalcogenides, have emerged these years as a new family of unconventional superconductors and provided the key insights to understand the phonon-electron interaction and pairing mechanism. Their mechanical properties are of strategic importance for the potential applications in spintronics and optoelectronics. However, there is still a lack of efficient approach to tune the elastic modulus despite the extensive studies. Herein, the modulated elastic modulus of 2D magnetic FeTe and its thickness-dependence is reported via phase engineering. The grown 2D FeTe by chemical vapor deposition can present various polymorphs, that is tetragonal FeTe (t-FeTe, antiferromagnetic) and hexagonal FeTe (h-FeTe, ferromagnetic). The measured Young's modulus of t-FeTe by nanoindentation method shows an obvious thickness-dependence, from 290.9 ± 9.2 to 113.0 ± 8.7 GPa when the thicknesses increased from 13.2 to 42.5 nm, respectively. In comparison, the elastic modulus of h-FeTe remains unchanged. These results can shed light on the efficient modulation of mechanical properties of 2D magnetic materials and pave the avenues for their practical applications in nanodevices.
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Affiliation(s)
- Yunfei Yu
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Zicheng Tao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 200031, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
| | - Wuxiao Han
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Guoshuai Du
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 200031, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Yabin Chen
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing, 100081, P. R. China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing, 400030, P. R. China
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13
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Parreiras SO, Martín-Fuentes C, Moreno D, Mathialagan SK, Biswas K, Muñiz-Cano B, Lauwaet K, Valvidares M, Valbuena MA, Urgel JI, Gargiani P, Camarero J, Miranda R, Martínez JI, Gallego JM, Écija D. 2D Co-Directed Metal-Organic Networks Featuring Strong Antiferromagnetism and Perpendicular Anisotropy. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309555. [PMID: 38155502 DOI: 10.1002/smll.202309555] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2023] [Revised: 12/19/2023] [Indexed: 12/30/2023]
Abstract
Antiferromagnetic spintronics is a rapidly emerging field with the potential to revolutionize the way information is stored and processed. One of the key challenges in this field is the development of novel 2D antiferromagnetic materials. In this paper, the first on-surface synthesis of a Co-directed metal-organic network is reported in which the Co atoms are strongly antiferromagnetically coupled, while featuring a perpendicular magnetic anisotropy. This material is a promising candidate for future antiferromagnetic spintronic devices, as it combines the advantages of 2D and metal-organic chemistry with strong antiferromagnetic order and perpendicular magnetic anisotropy.
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Affiliation(s)
- Sofia O Parreiras
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanoscience), Madrid, 28049, Spain
| | - Cristina Martín-Fuentes
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanoscience), Madrid, 28049, Spain
| | - Daniel Moreno
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanoscience), Madrid, 28049, Spain
| | | | - Kalyan Biswas
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanoscience), Madrid, 28049, Spain
| | - Beatriz Muñiz-Cano
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanoscience), Madrid, 28049, Spain
| | - Koen Lauwaet
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanoscience), Madrid, 28049, Spain
| | | | - Miguel A Valbuena
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanoscience), Madrid, 28049, Spain
| | - José I Urgel
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanoscience), Madrid, 28049, Spain
- Unidad de Nanomateriales Avanzados, Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Unidad Asociada al CSIC por el ICMM, Madrid, 28049, Spain
| | | | - Julio Camarero
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanoscience), Madrid, 28049, Spain
- Departamento de Física de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Madrid, 28049, Spain
| | - Rodolfo Miranda
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanoscience), Madrid, 28049, Spain
- Departamento de Física de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Madrid, 28049, Spain
| | - José I Martínez
- Instituto de Ciencia de Materiales de Madrid (ICMM), CSIC, Madrid, 28049, Spain
| | - José M Gallego
- Instituto de Ciencia de Materiales de Madrid (ICMM), CSIC, Madrid, 28049, Spain
| | - David Écija
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanoscience), Madrid, 28049, Spain
- Unidad de Nanomateriales Avanzados, Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Unidad Asociada al CSIC por el ICMM, Madrid, 28049, Spain
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14
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He W, Shen Y, Wohlfeld K, Sears J, Li J, Pelliciari J, Walicki M, Johnston S, Baldini E, Bisogni V, Mitrano M, Dean MPM. Magnetically propagating Hund's exciton in van der Waals antiferromagnet NiPS 3. Nat Commun 2024; 15:3496. [PMID: 38664432 PMCID: PMC11045826 DOI: 10.1038/s41467-024-47852-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Accepted: 04/11/2024] [Indexed: 04/28/2024] Open
Abstract
Magnetic van der Waals (vdW) materials have opened new frontiers for realizing novel many-body phenomena. Recently NiPS3 has received intense interest since it hosts an excitonic quasiparticle whose properties appear to be intimately linked to the magnetic state of the lattice. Despite extensive studies, the electronic character, mobility, and magnetic interactions of the exciton remain unresolved. Here we address these issues by measuring NiPS3 with ultra-high energy resolution resonant inelastic x-ray scattering (RIXS). We find that Hund's exchange interactions are primarily responsible for the energy of formation of the exciton. Measuring the dispersion of the Hund's exciton reveals that it propagates in a way that is analogous to a double-magnon. We trace this unique behavior to fundamental similarities between the NiPS3 exciton hopping and spin exchange processes, underlining the unique magnetic characteristics of this novel quasiparticle.
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Affiliation(s)
- W He
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY, 11973, USA.
| | - Y Shen
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - K Wohlfeld
- Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Warsaw, PL-02093, Poland
| | - J Sears
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - J Li
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - J Pelliciari
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - M Walicki
- Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Warsaw, PL-02093, Poland
| | - S Johnston
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
- Institute of Advanced Materials and Manufacturing, The University of Tennessee, Knoxville, TN, 37996, USA
| | - E Baldini
- Department of Physics, The University of Texas at Austin, Austin, TX, 78712, USA
| | - V Bisogni
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - M Mitrano
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - M P M Dean
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY, 11973, USA.
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15
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Li J, Chen Z, Zhou J, Zhang Y, Li X, Wu Z, Wu Y, Kang J. Phase-Dependent Magnetic Proximity Modulations on Valley Polarization and Splitting. ACS NANO 2024; 18:10921-10929. [PMID: 38608131 DOI: 10.1021/acsnano.4c01526] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2024]
Abstract
Proximate-induced magnetic interactions present a promising strategy for precise manipulation of valley degrees of freedom. Taking advantage of the splendid valleytronic platform of transition metal dichalcogenides, magnetic two-dimensional VSe2 with different phases are introduced to intervene in the spin of electrons and modulate their valleytronic properties. When constructing the heterostructures, 1T-VSe2/WX2 (X = S and Se) showcases significant improvement in the valley polarizations at room temperature, while 2H-VSe2/WX2 exhibits superior performance at low temperatures and demonstrates heightened sensitivity to the external magnetic field. Simultaneously, considerable valley splitting with a large geff factor up to -29.0 is observed in 2H-VSe2/WS2, while it is negligible in 1T-VSe2/WX2. First-principles calculations reveal a phase-dependent magnetic proximity mechanism on the valleytronic modulations, which is dominated by interfacial charge transfer in 1T-VSe2/WX2 and the proximity exchange field in 2H-VSe2/WX2 heterostructures. The effective control over valley degrees of freedom will bridge the valleytronic physics and devices, rendering enormous potential in the field of valley quantum applications.
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Affiliation(s)
- Jin'an Li
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Zilong Chen
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Jiangpeng Zhou
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yiteng Zhang
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Xu Li
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Zhiming Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yaping Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Junyong Kang
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
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16
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Tang X, Zhou J, Wong NLM, Chai J, Liu Y, Wang S, Song X. Strain-Induced Ferromagnetism in Monolayer T″-Phase VTe 2: Unveiling Magnetic States and Anisotropy for Spintronics Advancement. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:704. [PMID: 38668198 PMCID: PMC11054831 DOI: 10.3390/nano14080704] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2024] [Revised: 04/14/2024] [Accepted: 04/15/2024] [Indexed: 04/29/2024]
Abstract
Two-dimensional (2D) ferromagnets have attracted significant interest for their potential in spintronic device miniaturization, especially since the discovery of ferromagnetic ordering in monolayer materials such as CrI3 and Fe3GeTe2 in 2017. This study presents a detailed investigation into the effects of the Hubbard U parameter, biaxial strain, and structural distortions on the magnetic characteristics of T″-phase VTe2. We demonstrate that setting the Hubbard U to 0 eV provides an accurate representation of the observed structural, magnetic, and electronic features for both bulk and monolayer T″-phase VTe2. The application of strain reveals two distinct ferromagnetic states in the monolayer T″-phase VTe2, each characterized by minor structural differences, but notably different magnetic moments. The T″-1 state, with reduced magnetic moments, emerges under compressive strain, while the T″-2 state, featuring increased magnetic moments, develops under tensile strain. Our analysis also compares the magnetic anisotropy between the T and T″ phases of VTe2, highlighting that the periodic lattice distortion in the T″-phase induces an in-plane anisotropy, which makes it a material with an easy-axis of magnetization. Monte Carlo simulations corroborate our findings, indicating a high Curie temperature of approximately 191 K for the T″-phase VTe2. Our research not only sheds light on the critical aspects of the VTe2 system but also suggests new pathways for enhancing low-dimensional magnetism, contributing to the advancement of spintronics and straintronics.
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Affiliation(s)
- Xiaoting Tang
- Department of Physics, College of Science, Shanghai University, 99 Shangda Road, Shanghai 200444, China;
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jun Zhou
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore; (J.Z.); (N.L.M.W.); (J.C.)
| | - Nancy Lai Mun Wong
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore; (J.Z.); (N.L.M.W.); (J.C.)
| | - Jianwei Chai
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore; (J.Z.); (N.L.M.W.); (J.C.)
| | - Yi Liu
- Department of Physics, College of Science, Shanghai University, 99 Shangda Road, Shanghai 200444, China;
- Materials Genome Institute (MGI), Shanghai University, 333 Nanchen Road, Shanghai 200444, China
| | - Shijie Wang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore; (J.Z.); (N.L.M.W.); (J.C.)
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17
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Hu G, Guo H, Lv S, Li L, Wang Y, Han Y, Pan L, Xie Y, Yu W, Zhu K, Qi Q, Xian G, Zhu S, Shi J, Bao L, Lin X, Zhou W, Yang H, Gao HJ. Room‐Temperature Antisymmetric Magnetoresistance in van der Waals Ferromagnet Fe 3GaTe 2 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403154. [PMID: 38631700 DOI: 10.1002/adma.202403154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Revised: 04/08/2024] [Indexed: 04/19/2024]
Abstract
Van der Waals (vdW) ferromagnetic materials have emerged as a promising platform for the development of 2D spintronic devices. However, studies to date are restricted to vdW ferromagnetic materials with low Curie temperature (Tc) and small magnetic anisotropy. Here, a chemical vapor transport method is developed to synthesize a high-quality room-temperature ferromagnet, Fe3GaTe2 (c-Fe3GaTe2), which boasts a high Tc = 356 K and large perpendicular magnetic anisotropy. Due to the planar symmetry breaking, an unconventional room-temperature antisymmetric magnetoresistance (MR) is first observed in c-Fe3GaTe2 devices with step features, manifesting as three distinctive states of high, intermediate, and low resistance with the sweeping magnetic field. Moreover, the modulation of the antisymmetric MR is demonstrated by controlling the height of the surface steps. This work provides new routes to achieve magnetic random storage and logic devices by utilizing the room-temperature thickness-controlled antisymmetric MR and further design room-temperature 2D spintronic devices based on the vdW ferromagnet c-Fe3GaTe2.
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Affiliation(s)
- Guojing Hu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hui Guo
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Senhao Lv
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Linxuan Li
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yunhao Wang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yechao Han
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lulu Pan
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yulan Xie
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Weiqi Yu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Ke Zhu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qi Qi
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guoyu Xian
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shiyu Zhu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinan Shi
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lihong Bao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Xiao Lin
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wu Zhou
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haitao Yang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Hong-Jun Gao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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18
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Ma S, Li G, Li Z, Wang T, Zhang Y, Li N, Chen H, Zhang N, Liu W, Huang Y. Negative Photoconductivity of Fe 3GeTe 2 Crystal with Native Heterostructure for Ultraviolet to Terahertz Ultra-Broadband Photodetection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305709. [PMID: 38207342 DOI: 10.1002/adma.202305709] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Revised: 12/10/2023] [Indexed: 01/13/2024]
Abstract
Gaining insight into the photoelectric behavior of ferromagnetic materials is significant for comprehensively grasping their intrinsic properties and broadening future application fields. Here, through a specially designed Fe3GeTe2/O-Fe3GeTe2 heterostructure, first, the broad-spectrum negative photoconductivity phenomenon of ferromagnetic nodal line semimetal Fe3GeTe2 is reported that covers UV-vis-infrared-terahertz bands (355 nm to 3000 µm), promising to compensate for the inadequacies of traditional optoelectronic devices. The significant suppression of photoexcitation conductivity is revealed to arise from the semimetal/oxidation (sMO) interface-assisted dual-response mechanism, in which the electron excitation origins from the semiconductor photoconductivity effect in high-energy photon region, and semimetal topological band-transition in low-energy photon region. High responsivities ranging from 103 to 100 mA W-1 are acquired within ultraviolet-terahertz bands under ±0.1 V bias voltage at room temperature. Notably, the responsivity of 2.572 A W-1 at 3000 µm (0.1 THz) and the low noise equivalent power of 26 pW Hz-1/2 surpass most state-of-the-art mainstream terahertz detectors. This research provides a new perspective for revealing the photoelectric conversion properties of Fe3GeTe2 crystal and paves the way for the development of spin-optoelectronic devices.
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Affiliation(s)
- Suping Ma
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Guanghao Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Zhuo Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Tingyuan Wang
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Yawen Zhang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Ningning Li
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Haisheng Chen
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Nan Zhang
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Weiwei Liu
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Yi Huang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
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19
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Wu H, Chen L, Malinowski P, Jang BG, Deng Q, Scott K, Huang J, Ruff JPC, He Y, Chen X, Hu C, Yue Z, Oh JS, Teng X, Guo Y, Klemm M, Shi C, Shi Y, Setty C, Werner T, Hashimoto M, Lu D, Yilmaz T, Vescovo E, Mo SK, Fedorov A, Denlinger JD, Xie Y, Gao B, Kono J, Dai P, Han Y, Xu X, Birgeneau RJ, Zhu JX, da Silva Neto EH, Wu L, Chu JH, Si Q, Yi M. Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet. Nat Commun 2024; 15:2739. [PMID: 38548765 PMCID: PMC10978849 DOI: 10.1038/s41467-024-46862-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Accepted: 03/13/2024] [Indexed: 04/01/2024] Open
Abstract
Non-volatile phase-change memory devices utilize local heating to toggle between crystalline and amorphous states with distinct electrical properties. Expanding on this kind of switching to two topologically distinct phases requires controlled non-volatile switching between two crystalline phases with distinct symmetries. Here, we report the observation of reversible and non-volatile switching between two stable and closely related crystal structures, with remarkably distinct electronic structures, in the near-room-temperature van der Waals ferromagnet Fe5-δGeTe2. We show that the switching is enabled by the ordering and disordering of Fe site vacancies that results in distinct crystalline symmetries of the two phases, which can be controlled by a thermal annealing and quenching method. The two phases are distinguished by the presence of topological nodal lines due to the preserved global inversion symmetry in the site-disordered phase, flat bands resulting from quantum destructive interference on a bipartite lattice, and broken inversion symmetry in the site-ordered phase.
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Affiliation(s)
- Han Wu
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Lei Chen
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Paul Malinowski
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Bo Gyu Jang
- Theoretical Division and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Republic of Korea
| | - Qinwen Deng
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Kirsty Scott
- Department of Physics, Yale University, New Haven, CT, USA
- Energy Sciences Institute, Yale University, West Haven, CT, USA
- Department of Physics and Astronomy, University of California, Davis, CA, USA
- Department of Applied Physics, Yale University, New Haven, CT, USA
| | - Jianwei Huang
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Jacob P C Ruff
- Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY, USA
| | - Yu He
- Department of Physics, University of California, Berkeley, CA, USA
| | - Xiang Chen
- Department of Physics, University of California, Berkeley, CA, USA
| | - Chaowei Hu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Ziqin Yue
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Ji Seop Oh
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Xiaokun Teng
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Yucheng Guo
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Mason Klemm
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Chuqiao Shi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Yue Shi
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Chandan Setty
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Tyler Werner
- Department of Applied Physics, Yale University, New Haven, CT, USA
| | - Makoto Hashimoto
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Donghui Lu
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Turgut Yilmaz
- National Synchrotron Light Source II, Brookhaven National Lab, Upton, NY, USA
| | - Elio Vescovo
- National Synchrotron Light Source II, Brookhaven National Lab, Upton, NY, USA
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Alexei Fedorov
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | | | - Yaofeng Xie
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Bin Gao
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Junichiro Kono
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
- Departments of Electrical and Computer Engineering, Rice University, Houston, TX, USA
| | - Pengcheng Dai
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Robert J Birgeneau
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Jian-Xin Zhu
- Theoretical Division and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Eduardo H da Silva Neto
- Department of Physics, Yale University, New Haven, CT, USA
- Energy Sciences Institute, Yale University, West Haven, CT, USA
- Department of Physics and Astronomy, University of California, Davis, CA, USA
- Department of Applied Physics, Yale University, New Haven, CT, USA
| | - Liang Wu
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Jiun-Haw Chu
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Qimiao Si
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Ming Yi
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA.
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20
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Puthirath Balan A, Kumar A, Scholz T, Lin Z, Shahee A, Fu S, Denneulin T, Vas J, Kovács A, Dunin-Borkowski RE, Wang HI, Yang J, Lotsch BV, Nowak U, Kläui M. Harnessing Van der Waals CrPS 4 and Surface Oxides for Nonmonotonic Preset Field Induced Exchange Bias in Fe 3GeTe 2. ACS NANO 2024; 18:8383-8391. [PMID: 38437520 DOI: 10.1021/acsnano.3c13034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/06/2024]
Abstract
Two-dimensional van der Waals (vdW) heterostructures are an attractive platform for studying exchange bias due to their defect-free and atomically flat interfaces. Chromium thiophosphate (CrPS4), an antiferromagnetic material, possesses uncompensated magnetic spins in a single layer, rendering it a promising candidate for exploring exchange bias phenomena. Recent findings have highlighted that naturally oxidized vdW ferromagnetic Fe3GeTe2 exhibits exchange bias, attributed to the antiferromagnetic coupling of its ultrathin surface oxide layer (O-FGT) with the underlying unoxidized Fe3GeTe2. Anomalous Hall measurements are employed to scrutinize the exchange bias within the CrPS4/(O-FGT)/Fe3GeTe2 heterostructure. This analysis takes into account the contributions from both the perfectly uncompensated interfacial CrPS4 layer and the interfacial oxide layer. Intriguingly, a distinct and nonmonotonic exchange bias trend is observed as a function of temperature below 140 K. The occurrence of exchange bias induced by a "preset field" implies that the prevailing phase in the polycrystalline surface oxide is ferrimagnetic Fe3O4. Moreover, the exchange bias induced by the ferrimagnetic Fe3O4 is significantly modulated by the presence of the van der Waals antiferromagnetic CrPS4 layer, forming a heterostructure, along with additional iron oxide phases within the oxide layer. These findings underscore the intricate and complex nature of exchange bias in van der Waals heterostructures, highlighting their potential for tailored manipulation and control.
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Affiliation(s)
- Aravind Puthirath Balan
- Institute of Physics, Johannes Gutenberg University Mainz, Staudinger Weg 7, 55128 Mainz, Germany
| | - Aditya Kumar
- Institute of Physics, Johannes Gutenberg University Mainz, Staudinger Weg 7, 55128 Mainz, Germany
| | - Tanja Scholz
- Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany
| | - Zhongchong Lin
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Aga Shahee
- Institute of Physics, Johannes Gutenberg University Mainz, Staudinger Weg 7, 55128 Mainz, Germany
| | - Shuai Fu
- Max Planck Institute for Polymer Research Mainz, Ackermannweg 10, 55128 Mainz, Germany
| | - Thibaud Denneulin
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Joseph Vas
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany
| | - András Kovács
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Rafal E Dunin-Borkowski
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Hai I Wang
- Max Planck Institute for Polymer Research Mainz, Ackermannweg 10, 55128 Mainz, Germany
| | - Jinbo Yang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Bettina V Lotsch
- Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany
| | - Ulrich Nowak
- Department of Physics, University of Konstanz, Universitaetsstrasse 10, 78464 Konstanz, Germany
| | - Mathias Kläui
- Institute of Physics, Johannes Gutenberg University Mainz, Staudinger Weg 7, 55128 Mainz, Germany
- Centre for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, 7491 Trondheim, Norway
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21
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Yang J, Shi F, Zhao H, Chen L. Changing the spin disorder of two-dimensional magnetic Cr 2TiC 2T x to long-range order through noble metal adhesion. iScience 2024; 27:109227. [PMID: 38433897 PMCID: PMC10904981 DOI: 10.1016/j.isci.2024.109227] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Revised: 12/08/2023] [Accepted: 02/08/2024] [Indexed: 03/05/2024] Open
Abstract
To enhance the use of Cr2TiC2Tx MXene in spin electronics, it is essential to transform its spin-disordered state into a long-range ordered spin state. In this study, first-principles calculations show that Rh layers adhered to the Cr2TiC2Tx surfaces can transform its spin disordered state into a long-range spin order by donating electrons to the O terminations, resulting in Cr2TiC2Tx becoming a single-layer A-type antiferromagnet. As the proportion of F termination increases from 0 to 100%, the exchange coupling constant J1 of the compound escalates from 0.5 to 15.9 meV. Concurrently, the Néel temperature experiences a significant rise from 8 K to 110 K. The analysis of the density of states reveals that the obtained Cr2TiC2Tx exhibits excellent conductivity with O termination and semiconductor characteristics with F termination. These unique features make Cr2TiC2Tx a promising magnetic material for application in spin electronics.
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Affiliation(s)
- Jianhui Yang
- Quzhou University, Quzhou 324000, P.R. China
- Key Laboratory of Advanced Fuel Cells and Electrolyzers Technology of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P.R. China
| | - Fei Shi
- Quzhou University, Quzhou 324000, P.R. China
| | | | - Liang Chen
- Key Laboratory of Advanced Fuel Cells and Electrolyzers Technology of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P.R. China
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22
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Mattiat H, Schneider L, Reiser P, Poggio M, Sahafi P, Jordan A, Budakian R, Averyanov DV, Sokolov IS, Taldenkov AN, Parfenov OE, Kondratev OA, Tokmachev AM, Storchak VG. Mapping the phase-separated state in a 2D magnet. NANOSCALE 2024; 16:5302-5312. [PMID: 38372414 DOI: 10.1039/d3nr06550b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/20/2024]
Abstract
Intrinsic 2D magnets have recently been established as a playground for studies on fundamentals of magnetism, quantum phases, and spintronic applications. The inherent instability at low dimensionality often results in coexistence and/or competition of different magnetic orders. Such instability of magnetic ordering may manifest itself as phase-separated states. In 4f 2D materials, magnetic phase separation is expressed in various experiments; however, the experimental evidence is circumstantial. Here, we employ a high-sensitivity MFM technique to probe the spatial distribution of magnetic states in the paradigmatic 4f 2D ferromagnet EuGe2. Below the ferromagnetic transition temperature, we discover the phase-separated state and follow its evolution with temperature and magnetic field. The characteristic length-scale of magnetic domains amounts to hundreds of nanometers. These observations strongly shape our understanding of the magnetic states in 2D materials at the monolayer limit and contribute to engineering of ultra-compact spintronics.
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Affiliation(s)
- Hinrich Mattiat
- Department of Physics & Swiss Nanoscience Institute, University of Basel, 4056 Basel, Switzerland.
| | - Lukas Schneider
- Department of Physics & Swiss Nanoscience Institute, University of Basel, 4056 Basel, Switzerland.
| | - Patrick Reiser
- Department of Physics & Swiss Nanoscience Institute, University of Basel, 4056 Basel, Switzerland.
| | - Martino Poggio
- Department of Physics & Swiss Nanoscience Institute, University of Basel, 4056 Basel, Switzerland.
| | - Pardis Sahafi
- Department of Physics and Astronomy & Institute for Quantum Computing, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Andrew Jordan
- Department of Physics and Astronomy & Institute for Quantum Computing, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Raffi Budakian
- Department of Physics and Astronomy & Institute for Quantum Computing, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
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23
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Zhang Y, Zhang S, Jia M, Wang T, Guan L, Tao J. Prediction of intrinsic room-temperature ferromagnetism in two-dimensional CrInX 2 (X = S, Se, Te) monolayers. Phys Chem Chem Phys 2024; 26:8183-8194. [PMID: 38380595 DOI: 10.1039/d3cp06010a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Herein, using density functional theory, novel two-dimensional (2D) CrInX2 (X = S, Se, Te) structures are predicted to be practical ferromagnetic (FM) semiconductors. Phonon vibrations and molecular dynamics simulations verified their structural and thermodynamic stability. Sizable fully spin-polarized band gaps of 1.03 and 0.69 eV are found for CrInS2 and CrInSe2, while CrInTe2 exhibits half-metallic band nature (at 0 K with a perfect lattice). The high magnetic anisotropy energies are responsible for their long-range spin polarization. The Curie temperatures (Tc) are estimated to be 347, 397 and 447 K for CrInS2, CrInSe2 and CrInTe2, respectively, all well above the room-temperature. The high Tc originates from unusual FM direct exchange, the efficient super-exchange coupling between neighboring Cr eg-orbitals with zero virtual exchange gaps and the presence of dual Cr-X-Cr super-exchange channels. Our systematic study of the CrInX2 monolayer suggests that it could be a promising material for spintronics applications.
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Affiliation(s)
- Yunfei Zhang
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132, China.
| | - Shuo Zhang
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132, China.
| | - Minghao Jia
- School of Sciences, Hebei University of Technology, Tianjin 300401, China.
| | - Tian Wang
- School of Sciences, Hebei University of Technology, Tianjin 300401, China.
| | - Lixiu Guan
- School of Sciences, Hebei University of Technology, Tianjin 300401, China.
| | - Junguang Tao
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132, China.
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24
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Zhang Y, Zhang D, Gao B, Xu Q. 2D Heterostructure of CoCl 2 /Co 3 O 4 Built for Strong Enhanced Magnetism. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305641. [PMID: 37914667 DOI: 10.1002/smll.202305641] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2023] [Revised: 10/18/2023] [Indexed: 11/03/2023]
Abstract
As a remarkable structure, 2D magnetic heterojunctions have attracted researchers' attention owing to their controlled manipulation in the electronic device. However, successful fabrication as well as modulation of their structure and compound remain challenging. Herein, a novel method is designed to obtain a CoCl2 /Co3 O4 heterojunction on Si/SiO2 substrate with the assistance of supercritical CO2 (SC CO2 ), and the as-fabricated sample has significantly increased coercivity and saturation magnetization, which is 11 times higher than pure Co3 O4 . Further, it can be found that the CO2 pressure has the decisive effect on the saturation magnetization of the sample. Therefore, it suggests that the tunable electronic-magnetic device can be anticipated to be obtained in the future.
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Affiliation(s)
- Yunxiao Zhang
- College of Materials Science & Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Di Zhang
- College of Materials Science & Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Bo Gao
- College of Materials Science & Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Qun Xu
- College of Materials Science & Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450003, P. R. China
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25
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Xue F, Hou Y, Wang Z, Xu Z, He K, Wu R, Xu Y, Duan W. Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures. Natl Sci Rev 2024; 11:nwad151. [PMID: 38312389 PMCID: PMC10833467 DOI: 10.1093/nsr/nwad151] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Revised: 02/24/2023] [Accepted: 04/03/2023] [Indexed: 02/02/2024] Open
Abstract
The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = ±1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = ±3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi2Te4 monolayers. The switching between different phases of QAHE can be controlled in multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.
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Affiliation(s)
- Feng Xue
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yusheng Hou
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Zhe Wang
- State Key Laboratory of Surface Physics, Key Laboratory of Computational Physical Sciences, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Zhiming Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Ke He
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California-Irvine, Irvine, CA 92697, USA
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Tencent Quantum Laboratory, Tencent Technology (Shenzhen) Co. Ltd, Shenzhen 518057, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
| | - Wenhui Duan
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
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26
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Lobo-Checa J, Hernández-López L, Otrokov MM, Piquero-Zulaica I, Candia AE, Gargiani P, Serrate D, Delgado F, Valvidares M, Cerdá J, Arnau A, Bartolomé F. Ferromagnetism on an atom-thick & extended 2D metal-organic coordination network. Nat Commun 2024; 15:1858. [PMID: 38424075 PMCID: PMC10904770 DOI: 10.1038/s41467-024-46115-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Accepted: 02/14/2024] [Indexed: 03/02/2024] Open
Abstract
Ferromagnetism is the collective alignment of atomic spins that retain a net magnetic moment below the Curie temperature, even in the absence of external magnetic fields. Reducing this fundamental property into strictly two-dimensions was proposed in metal-organic coordination networks, but thus far has eluded experimental realization. In this work, we demonstrate that extended, cooperative ferromagnetism is feasible in an atomically thin two-dimensional metal-organic coordination network, despite only ≈ 5% of the monolayer being composed of Fe atoms. The resulting ferromagnetic state exhibits an out-of-plane easy-axis square-like hysteresis loop with large coercive fields over 2 Tesla, significant magnetic anisotropy, and persists up to TC ≈ 35 K. These properties are driven by exchange interactions mainly mediated by the molecular linkers. Our findings resolve a two decade search for ferromagnetism in two-dimensional metal-organic coordination networks.
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Affiliation(s)
- Jorge Lobo-Checa
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009, Zaragoza, Spain.
- Departamento de Física de la Materia Condensada, Universidad de Zaragoza, E-50009, Zaragoza, Spain.
| | - Leyre Hernández-López
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009, Zaragoza, Spain
- Departamento de Física de la Materia Condensada, Universidad de Zaragoza, E-50009, Zaragoza, Spain
| | - Mikhail M Otrokov
- Centro de Física de Materiales CSIC/UPV-EHU-Materials Physics Center, Manuel Lardizabal 5, E-20018, San Sebastián, Spain.
- Donostia International Physics Center, Paseo Manuel de Lardizabal 4, E-20018, San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, E-48011, Bilbao, Spain.
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain.
| | | | - Adriana E Candia
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009, Zaragoza, Spain
- Instituto de Desarrollo Tecnológico para la Industria Química (INTEC-UNL-CONICET), 3000, Santa Fe, Argentina
- Instituto de Física del Litoral, Universidad Nacional del Litoral (IFIS-UNL-CONICET), 3000, Santa Fe, Argentina
| | | | - David Serrate
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009, Zaragoza, Spain
- Departamento de Física de la Materia Condensada, Universidad de Zaragoza, E-50009, Zaragoza, Spain
| | - Fernando Delgado
- Instituto de Estudios Avanzados IUDEA, Departamento de Física, Universidad de La Laguna, C/Astrofísico Francisco Sánchez, s/n, 38203, La Laguna, Spain
| | - Manuel Valvidares
- ALBA Synchrotron Light Source, E-08290, Cerdanyola del Vallès, Spain
| | - Jorge Cerdá
- Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049, Madrid, Spain
| | - Andrés Arnau
- Centro de Física de Materiales CSIC/UPV-EHU-Materials Physics Center, Manuel Lardizabal 5, E-20018, San Sebastián, Spain.
- Donostia International Physics Center, Paseo Manuel de Lardizabal 4, E-20018, San Sebastian, Spain.
- Departamento de Polímeros y Materiales Avanzados: Física, Química y Tecnología, Facultad de Química UPV/EHU, 20080, Donostia-San Sebastián, Spain.
| | - Fernando Bartolomé
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009, Zaragoza, Spain.
- Departamento de Física de la Materia Condensada, Universidad de Zaragoza, E-50009, Zaragoza, Spain.
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27
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Cui F, He K, Wu S, Zhang H, Lu Y, Li Z, Hu J, Pan S, Zhu L, Huan Y, Li B, Duan X, Ji Q, Zhao X, Zhang Y. Stoichiometry-Tunable Synthesis and Magnetic Property Exploration of Two-Dimensional Chromium Selenides. ACS NANO 2024; 18:6276-6285. [PMID: 38354364 DOI: 10.1021/acsnano.3c10609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Emerging 2D chromium-based dichalcogenides (CrXn (X = S, Se, Te; 0 < n ≤ 2)) have provoked enormous interests due to their abundant structures, intriguing electronic and magnetic properties, excellent environmental stability, and great application potentials in next generation electronics and spintronics devices. Achieving stoichiometry-controlled synthesis of 2D CrXn is of paramount significance for such envisioned investigations. Herein, we report the stoichiometry-controlled syntheses of 2D chromium selenide (CrxSey) materials (rhombohedral Cr2Se3 and monoclinic Cr3Se4) via a Cr-self-intercalation route by designing two typical chemical vapor deposition (CVD) strategies. We have also clarified the different growth mechanisms, distinct chemical compositions, and crystal structures of the two type materials. Intriguingly, we reveal that the ultrathin Cr2Se3 nanosheets exhibit a metallic feature, while the Cr3Se4 nanosheets present a transition from p-type semiconductor to metal upon increasing the flake thickness. Moreover, we have also uncovered the ferromagnetic properties of 2D Cr2Se3 and Cr3Se4 below ∼70 K and ∼270 K, respectively. Briefly, this research should promote the stoichiometric-ratio controllable syntheses of 2D magnetic materials, and the property explorations toward next generation spintronics and magneto-optoelectronics related applications.
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Affiliation(s)
- Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Kun He
- College of Semiconductors (College of Integrated Circuits), School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Shengqiang Wu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Hongmei Zhang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Yue Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China
| | - Zhenzhu Li
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies and School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Bo Li
- College of Semiconductors (College of Integrated Circuits), School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Qingqing Ji
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
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28
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Cui J, Sha H, Yang W, Yu R. Antiferromagnetic imaging via ptychographic phase retrieval. Sci Bull (Beijing) 2024; 69:466-472. [PMID: 38161093 DOI: 10.1016/j.scib.2023.12.044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Revised: 11/27/2023] [Accepted: 12/15/2023] [Indexed: 01/03/2024]
Abstract
Antiferromagnetic imaging is critical for understanding and optimizing the properties of antiferromagnetic materials and devices. Despite the widespread use of high-energy electrons for atomic-scale imaging, they have low sensitivity to spin textures. Typically, the magnetic contribution to the phase of a high-energy electron wave is weaker than one percent of the electrostatic potential. Here, we demonstrate direct imaging of antiferromagnetic lattice through precise phase retrieval via electron ptychography, paving the way for magnetic lattice imaging of antiferromagnetic materials and devices.
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Affiliation(s)
- Jizhe Cui
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China; MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, China; State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China
| | - Haozhi Sha
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China; MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, China; State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China
| | - Wenfeng Yang
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China; MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, China; State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China
| | - Rong Yu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China; MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, China; State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China.
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29
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Komorowski PG, Cottam MG. Theory for magnetic impurity modes in two-dimensional van der Waals ferromagnetic films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:215801. [PMID: 38316060 DOI: 10.1088/1361-648x/ad2671] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2023] [Accepted: 02/05/2024] [Indexed: 02/07/2024]
Abstract
A spin-wave analysis is developed to calculate the energies of the localized excitations occurring in two-dimensional ferromagnetic van der Waals monolayers when a substitutional magnetic impurity is introduced. The magnetic ions lie on a bipartite honeycomb lattice (similar to that for graphene) and the theory includes the effects of both Ising anisotropy and single-ion anisotropy to stabilize the magnetic ordering perpendicular to the atomic plane at low temperatures. A Dyson-equation formalism, together with the spin-dependent Green's functions derived for van der Waals monolayers, is employed to evaluate the existence conditions and energies for the impurity modes, which lie above the band of spin-wave states of the pure host material. For realistic parameter values it is found that typically two impurity modes may exist, depending on the spin quantum number for the magnetic impurity atom. Numerical applications are made to CrI3and Cr2Ge2Te6as the host materials.
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Affiliation(s)
- Peter G Komorowski
- Department of Physics and Astronomy, University of Western Ontario, London, Ontario N6A 3K7, Canada
| | - Michael G Cottam
- Department of Physics and Astronomy, University of Western Ontario, London, Ontario N6A 3K7, Canada
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30
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Song L, Zhao Y, Du R, Li H, Li X, Feng W, Yang J, Wen X, Huang L, Peng Y, Sun H, Jiang Y, He J, Shi J. Coexistence of Ferroelectricity and Ferromagnetism in Atomically Thin Two-Dimensional Cr 2S 3/WS 2 Vertical Heterostructures. NANO LETTERS 2024; 24:2408-2414. [PMID: 38329291 DOI: 10.1021/acs.nanolett.3c05105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Two-dimensional (2D) heterostructures with ferromagnetism and ferroelectricity provide a promising avenue to miniaturize the device size, increase computational power, and reduce energy consumption. However, the direct synthesis of such eye-catching heterostructures has yet to be realized up to now. Here, we design a two-step chemical vapor deposition strategy to growth of Cr2S3/WS2 vertical heterostructures with atomically sharp and clean interfaces on sapphire. The interlayer charge transfer and periodic moiré superlattice result in the emergence of room-temperature ferroelectricity in atomically thin Cr2S3/WS2 vertical heterostructures. In parallel, long-range ferromagnetic order is discovered in 2D Cr2S3 via the magneto-optical Kerr effect technique with the Curie temperature approaching 170 K. The charge distribution variation induced by the moiré superlattice changes the ferromagnetic coupling strength and enhances the Curie temperature. The coexistence of ferroelectricity and ferromagnetism in 2D Cr2S3/WS2 vertical heterostructures provides a cornerstone for the further design of logic-in-memory devices to build new computing architectures.
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Affiliation(s)
- Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, People's Republic of China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yanan Peng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yulin Jiang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
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31
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Chen K, Yan X, Deng J, Bo C, Song M, Kan D, He J, Huo W, Liu JZ. Out-of-plane pressure and electron doping inducing phase and magnetic transitions in GeC/CrS 2/GeC van der Waals heterostructure. NANOSCALE 2024; 16:3693-3700. [PMID: 38288860 DOI: 10.1039/d3nr05610d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Out-of-plane pressure and electron doping can affect interlayer interactions in van der Waals materials, modifying their crystal structure and physical and chemical properties. In this study, we used magnetic monolayer 1T/1T'-CrS2 and high symmetry 2D-honeycomb material GeC to construct a GeC/CrS2/GeC triple layered van der Waals heterostructure (vdWH). Based on density functional theory calculations, we found that applying out-of-plane strain and doping with electrons could induce a 1T'-to-1T phase transition and consequently the ferromagnetic (FM)-to-antiferromagnetic (AFM) transition in the CrS2 layer. Such a phase and magnetic transition arises from the pressure and electron-induced interlayer interaction enhancement. The electron doping can effectively decrease the critical compressive stress from ∼4.3 GPa (charge neutrality) to ∼664 MPa (Q = 9 × 10-3 e- per atom) for the FM-to-AFM transition. These properties could be used to fabricate and program the 2D lateral FM/AFM heterostructures for artificial controlled spin texture and miniaturized spintronic devices.
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Affiliation(s)
- Kaiyun Chen
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Xue Yan
- Department of Mechanical Engineering, The University of Melbourne, Parkville, VIC 3010, Australia.
| | - Junkai Deng
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Cunle Bo
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Mengshan Song
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Dongxiao Kan
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Jiabei He
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Wangtu Huo
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Jefferson Zhe Liu
- Department of Mechanical Engineering, The University of Melbourne, Parkville, VIC 3010, Australia.
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32
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Zhou Y, Cheng R, Wang H, Zhai B, Yin L, Wen Y, Lv Y, He J. van der Waals Epitaxial Growth of One-Unit-Cell-Thick Ferroelectric CuCrS 2 Nanosheets. NANO LETTERS 2024; 24:2118-2124. [PMID: 38305203 DOI: 10.1021/acs.nanolett.3c05018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
Ferroelectric two-dimensional (2D) materials with a high transition temperature are highly desirable for new physics and next-generation memory electronics. However, the long-range polar order of ferroelectrics will barely persist when the thickness reaches the nanoscale. In this work, we synthesized 2D CuCrS2 nanosheets with thicknesses down to one unit cell via van der Waals epitaxy in a chemical vapor deposition system. A combination of transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements confirms the R3m space group and noncentrosymmetric structure. Switchable ferroelectric domains and obvious ferroelectric hysteresis loops were created and visualized by piezoresponse force microscopy. Theoretical calculation helps us understand the mechanism of ferroelectric switching in CuCrS2 nanosheets. Finally, we fabricated a ferroelectric memory device that achieves an on/off ratio of ∼102 and remains stable after 2000 s, indicating its applicability in novel nanoelectronics. Overall, 2D CuCrS2 nanosheets exhibit excellent ferroelectric properties at the nanoscale, showing great promise for next-generation devices.
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Affiliation(s)
- Yanchang Zhou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yawei Lv
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
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33
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Hendriks F, Rojas-Lopez RR, Koopmans B, Guimarães MHD. Electric control of optically-induced magnetization dynamics in a van der Waals ferromagnetic semiconductor. Nat Commun 2024; 15:1298. [PMID: 38346955 PMCID: PMC10861592 DOI: 10.1038/s41467-024-45623-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Accepted: 01/30/2024] [Indexed: 02/15/2024] Open
Abstract
Electric control of magnetization dynamics in two-dimensional (2D) magnetic materials is an essential step for the development of novel spintronic nanodevices. Electrostatic gating has been shown to greatly affect the static magnetic properties of some van der Waals magnets, but the control over their magnetization dynamics is still largely unexplored. Here we show that the optically-induced magnetization dynamics in the van der Waals ferromagnet Cr2Ge2Te6 can be effectively controlled by electrostatic gates, with a one order of magnitude change in the precession amplitude and over 10% change in the internal effective field. In contrast to the purely thermally-induced mechanisms previously reported for 2D magnets, we find that coherent opto-magnetic phenomena play a major role in the excitation of magnetization dynamics in Cr2Ge2Te6. Our work sets the first steps towards electric control over the magnetization dynamics in 2D ferromagnetic semiconductors, demonstrating their potential for applications in ultrafast opto-magnonic devices.
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Affiliation(s)
- Freddie Hendriks
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands
| | - Rafael R Rojas-Lopez
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Brazil
| | - Bert Koopmans
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Marcos H D Guimarães
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands.
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34
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Ngaloy R, Zhao B, Ershadrad S, Gupta R, Davoudiniya M, Bainsla L, Sjöström L, Hoque MA, Kalaboukhov A, Svedlindh P, Sanyal B, Dash SP. Strong In-Plane Magnetization and Spin Polarization in (Co 0.15Fe 0.85) 5GeTe 2/Graphene van der Waals Heterostructure Spin-Valve at Room Temperature. ACS NANO 2024. [PMID: 38330915 PMCID: PMC10883121 DOI: 10.1021/acsnano.3c07462] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Van der Waals (vdW) magnets are promising, because of their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, so far, most of the vdW magnet-based spintronic devices have been limited to cryogenic temperatures with magnetic anisotropies favoring out-of-plane or canted orientation of the magnetization. Here, we report beyond room-temperature lateral spin-valve devices with strong in-plane magnetization and spin polarization of the vdW ferromagnet (Co0.15Fe0.85)5GeTe2 (CFGT) in heterostructures with graphene. Density functional theory (DFT) calculations show that the magnitude of the anisotropy depends on the Co concentration and is caused by the substitution of Co in the outermost Fe layer. Magnetization measurements reveal the above room-temperature ferromagnetism in CFGT and clear remanence at room temperature. Heterostructures consisting of CFGT nanolayers and graphene were used to experimentally realize basic building blocks for spin valve devices, such as efficient spin injection and detection. Further analysis of spin transport and Hanle spin precession measurements reveals a strong in-plane magnetization with negative spin polarization at the interface with graphene, which is supported by the calculated spin-polarized density of states of CFGT. The in-plane magnetization of CFGT at room temperature proves its usefulness in graphene lateral spin-valve devices, thus revealing its potential application in spintronic technologies.
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Affiliation(s)
- Roselle Ngaloy
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Bing Zhao
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Soheil Ershadrad
- Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
| | - Rahul Gupta
- Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
- Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden
| | - Masoumeh Davoudiniya
- Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
| | - Lakhan Bainsla
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
- Department of Physics, Indian Institute of Technology Ropar, Roopnagar 140001, Punjab, India
| | - Lars Sjöström
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Md Anamul Hoque
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Alexei Kalaboukhov
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Peter Svedlindh
- Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden
| | - Biplab Sanyal
- Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
| | - Saroj Prasad Dash
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
- Graphene Center, Chalmers University of Technology, SE-41296 Göteborg, Sweden
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35
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Wu C, Sun S, Gong W, Li J, Wang X. Nonvolatile switchable half-metallicity and magnetism in the MXene Hf 2MnC 2O 2/Sc 2CO 2 multiferroic heterostructure. Phys Chem Chem Phys 2024; 26:5323-5332. [PMID: 38268467 DOI: 10.1039/d3cp04847k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Nonvolatile electrical control of two-dimensional (2D) van der Waals (vdW) magnetism is important for spintronic devices. Here, using first-principles calculations, we systematically investigated the magnetic properties of the MXene Hf2MnC2O2 combined with the ferroelectric MXene Sc2CO2. When flipping the electric polarization of Sc2CO2, a transition between a semiconductor and a half-metal occurs in the Hf2MnC2O2 monolayer. Moreover, the ferromagnetic exchange parameter J1 can be enhanced to 9.67 meV under polarized P↑ of Sc2CO2, much larger than those of the pristine Hf2MnC2O2 monolayer and Hf2MnC2O2/Sc2CO2-P↓. In addition, the easy magnetization axis of the Hf2MnC2O2 monolayer is also dependent on the polarization orientation of Sc2CO2. Our results indicate a multiferroic heterostructure based on MXenes, offering an effective way for obtaining nonvolatile electrical control of electronic and magnetic properties.
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Affiliation(s)
- Changwei Wu
- Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, Guangdong, P. R. China.
- School of Electronic Information and Electrical Engineering, Huizhou University, Huizhou 516001, Guangdong, P. R. China
| | - Shanwei Sun
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
| | - Weiping Gong
- Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, Guangdong, P. R. China.
- School of Electronic Information and Electrical Engineering, Huizhou University, Huizhou 516001, Guangdong, P. R. China
| | - Jiangyu Li
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
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36
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Li Z, Zhang H, Li G, Guo J, Wang Q, Deng Y, Hu Y, Hu X, Liu C, Qin M, Shen X, Yu R, Gao X, Liao Z, Liu J, Hou Z, Zhu Y, Fu X. Room-temperature sub-100 nm Néel-type skyrmions in non-stoichiometric van der Waals ferromagnet Fe 3-xGaTe 2 with ultrafast laser writability. Nat Commun 2024; 15:1017. [PMID: 38310096 PMCID: PMC10838308 DOI: 10.1038/s41467-024-45310-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 01/19/2024] [Indexed: 02/05/2024] Open
Abstract
Realizing room-temperature magnetic skyrmions in two-dimensional van der Waals ferromagnets offers unparalleled prospects for future spintronic applications. However, due to the intrinsic spin fluctuations that suppress atomic long-range magnetic order and the inherent inversion crystal symmetry that excludes the presence of the Dzyaloshinskii-Moriya interaction, achieving room-temperature skyrmions in 2D magnets remains a formidable challenge. In this study, we target room-temperature 2D magnet Fe3GaTe2 and unveil that the introduction of iron-deficient into this compound enables spatial inversion symmetry breaking, thus inducing a significant Dzyaloshinskii-Moriya interaction that brings about room-temperature Néel-type skyrmions with unprecedentedly small size. To further enhance the practical applications of this finding, we employ a homemade in-situ optical Lorentz transmission electron microscopy to demonstrate ultrafast writing of skyrmions in Fe3-xGaTe2 using a single femtosecond laser pulse. Our results manifest the Fe3-xGaTe2 as a promising building block for realizing skyrmion-based magneto-optical functionalities.
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Grants
- This work was supported by the National Key Research and Development Program of China at grant No. 2020YFA0309300, Science and Technology Projects in Guangzhou (grant No. 202201000008), the National Natural Science Foundation of China (NSFC) at grant No. 12304146, 11974191, 12127803, 52322108, 52271178, U22A20117 and 12241403, China Postdoctoral Science Foundation (2023M741828), Guangdong Basic and Applied Basic Research Foundation (grant No. 2021B1515120047 and 2023B1515020112), the Natural Science Foundation of Tianjin at grant No. 20JCJQJC00210, the 111 Project at grant No. B23045, and the “Fundamental Research Funds for the Central Universities”, Nankai University (grant No. 63213040, C029211101, C02922101, ZB22000104 and DK2300010207). This work was supported by the Synergetic Extreme Condition User Facility (SECUF).
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Affiliation(s)
- Zefang Li
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin, China
| | - Huai Zhang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Guanqi Li
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou, China
| | - Jiangteng Guo
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin, China
| | - Qingping Wang
- School of Physics and Electronic and Electrical Engineering, Aba Teachers University, Wenchuan, China
| | - Ying Deng
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin, China
| | - Yue Hu
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin, China
| | - Xuange Hu
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin, China
| | - Can Liu
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin, China
| | - Minghui Qin
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Xi Shen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Richeng Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
| | - Zhimin Liao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Junming Liu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China
- Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
| | - Yimei Zhu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, USA.
| | - Xuewen Fu
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin, China.
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, China.
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37
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Gong J, Ding G, Xie C, Wang W, Liu Y, Zhang G, Wang X. Genuine Dirac Half-Metals in Two-Dimensions. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307297. [PMID: 38044294 PMCID: PMC10853703 DOI: 10.1002/advs.202307297] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2023] [Revised: 11/08/2023] [Indexed: 12/05/2023]
Abstract
When spin-orbit coupling (SOC) is absent, all proposed half-metals with twofold degenerate nodal points at the K (or K') point in 2D materials are classified as "Dirac half-metals" owing to the way graphene is utilized in the earliest studies. Actually, each band crossing point at the K or K' point is described by a 2D Weyl Hamiltonian with definite chirality; hence, it should be a Weyl point. To the best of its knowledge, there have not yet been any reports of a genuine (i.e., fourfold degenerate) 2D Dirac point half-metal. In this work, using first-principles calculations, it proposes for the first time that the 2D d0 -type ferromagnet Mg4 N4 is a genuine 2D Dirac half-metal candidate with a fourfold degenerate Dirac point at the S high-symmetry point, intrinsic magnetism, a high Curie temperature, 100% spin polarization, topology robust under the SOC and uniaxial and biaxial strains, and spin-polarized edge states. This work can serve as a starting point for future predictions of intrinsically magnetic materials with genuine 2D Dirac points, which will aid the frontier of topo-spintronics research in 2D systems.
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Affiliation(s)
- Jialin Gong
- Institute for Superconducting and Electronic Materials (ISEM)University of WollongongWollongong2500Australia
- School of Physical Science and TechnologySouthwest UniversityChongqing400715China
| | - Guangqian Ding
- School of ScienceChongqing University of Posts and TelecommunicationsChongqing400065China
| | - Chengwu Xie
- School of Electronics and Information EngineeringTiangong UniversityTianjin300387China
| | - Wenhong Wang
- School of Electronics and Information EngineeringTiangong UniversityTianjin300387China
| | - Ying Liu
- School of Materials Science and EngineeringHebei University of TechnologyTianjin300130China
| | - Gang Zhang
- Institute of High Performance ComputingAgency for ScienceTechnology and Research (A*STAR)Singapore138632Singapore
| | - Xiaotian Wang
- Institute for Superconducting and Electronic Materials (ISEM)University of WollongongWollongong2500Australia
- School of Physical Science and TechnologySouthwest UniversityChongqing400715China
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38
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Wu H, Yang L, Zhang G, Jin W, Xiao B, Zhang W, Chang H. Robust Magnetic Proximity Induced Anomalous Hall Effect in a Room Temperature van der Waals Ferromagnetic Semiconductor Based 2D Heterostructure. SMALL METHODS 2024:e2301524. [PMID: 38295050 DOI: 10.1002/smtd.202301524] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Revised: 01/04/2024] [Indexed: 02/02/2024]
Abstract
Developing novel high-temperature van der Waals ferromagnetic semiconductor materials and investigating their interface coupling effects with 2D topological semimetals are pivotal for advancing next-generation spintronic and quantum devices. However, most van der Waals ferromagnetic semiconductors exhibit ferromagnetism only at low temperatures, limiting the proximity research on their interfaces with topological semimetals. Here, an intrinsic, van der Waals layered room-temperature ferromagnetic semiconductor crystal, FeCr0.5 Ga1.5 Se4 (FCGS), is reported with a Curie temperature (TC ) as high as 370 K, setting a new record for van der Waals ferromagnetic semiconductors. The saturation magnetization at low temperature (2 K) and room temperature (300 K) reaches 8.2 and 2.7 emu g-1 , respectively. Furthermore, FCGS possesses a bandgap of ≈1.2 eV, which is comparable to the widely used commercial silicon. The FCGS/graphene 2D heterostructure exhibits an impeccably smooth and gapless interface, thereby inducing a robust van der Waals magnetic proximity coupling effect between FCGS and graphene. After the proximity coupling, graphene undergoes a charge carrier transition from electrons to holes, accompanied by a transition from non-magnetic to ferromagnetic transport behavior with robust anomalous Hall effect (AHE). Notably, the van der Waals magnetic proximity-induced AHE remains robust even up to 400 K.
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Affiliation(s)
- Hao Wu
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Li Yang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Gaojie Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Wen Jin
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Bichen Xiao
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Wenfeng Zhang
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Haixin Chang
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
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39
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Lin K, Sun X, Dirnberger F, Li Y, Qu J, Wen P, Sofer Z, Söll A, Winnerl S, Helm M, Zhou S, Dan Y, Prucnal S. Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr. ACS NANO 2024; 18:2898-2905. [PMID: 38240736 PMCID: PMC10832030 DOI: 10.1021/acsnano.3c07236] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Revised: 01/11/2024] [Accepted: 01/16/2024] [Indexed: 01/31/2024]
Abstract
The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling among its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in nanometer-thick CrSBr. By careful analysis, we identify that the satellite peaks predominantly arise from the interaction between the exciton and an optical phonon with a frequency of 118 cm-1 (∼14.6 meV) due to the out-of-plane vibration of Br atoms. Power-dependent and temperature-dependent photoluminescence measurements support exciton-phonon coupling and indicate a coupling between magnetic and optical properties, suggesting the possibility of carrier localization in the material. The presence of strong coupling between the exciton and the lattice may have important implications for the design of light-matter interactions in magnetic semiconductors and provide insights into the exciton dynamics in CrSBr. This highlights the potential for exploiting exciton-phonon coupling to control the optical properties of layered antiferromagnetic materials.
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Affiliation(s)
- Kaiman Lin
- University
of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai
Jiao Tong University, 20024 Shanghai, People’s Republic of China
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Xiaoxiao Sun
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Florian Dirnberger
- Institute
of Applied Physics and Würzburg-Dresden Cluster of Excellence
ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
| | - Yi Li
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Technische
Universität Dresden, 01062 Dresden, Germany
| | - Jiang Qu
- Leibniz
Institute for Solid State and Materials Research Dresden (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany
| | - Peiting Wen
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Technische
Universität Dresden, 01062 Dresden, Germany
| | - Zdenek Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 16628 Prague 6, Czech Republic
| | - Aljoscha Söll
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 16628 Prague 6, Czech Republic
| | - Stephan Winnerl
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Manfred Helm
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Technische
Universität Dresden, 01062 Dresden, Germany
| | - Shengqiang Zhou
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Yaping Dan
- University
of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai
Jiao Tong University, 20024 Shanghai, People’s Republic of China
| | - Slawomir Prucnal
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
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40
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Liu Q, Cui S, Bian R, Pan E, Cao G, Li W, Liu F. The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications. ACS NANO 2024; 18:1778-1819. [PMID: 38179983 DOI: 10.1021/acsnano.3c05711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.
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Affiliation(s)
- Qing Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Silin Cui
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Renji Bian
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Er Pan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, 615013 Xi'an, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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41
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Jia C, Jin C, Shi P, Su J, Zhang Y, Niu X, Wang B. Toward intrinsic ultra-high-temperature ferromagnetism in a CrAuTe 2/graphene heterosystem. Phys Chem Chem Phys 2024; 26:2134-2139. [PMID: 38131398 DOI: 10.1039/d3cp02155f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
Exploring intrinsic two-dimensional (2D) ferromagnetic (FM) materials with high Curie temperatures (TC) and large magnetic anisotropy energies (MAE) is one of the effective solutions to develop materials for high-performance spintronic applications. Using density functional theory calculations and high-throughput computations, we predict an intrinsic bimetallic FM monolayer, CrAuTe2, which has a large MAE and high TC. The results show that the value of the MAE can reach about 1.5 meV per Cr, and Monte Carlo simulations show that the TC of monolayer CrAuTe2 is about 840 K. Further analysis indicates that the joint effects of spin-orbit coupling (SOC) interaction and magnetic dipole-dipole interaction result in high in-plane magnetic anisotropy. In addition, this monolayer has good dynamic, thermal, and mechanical stabilities, which were confirmed by ab initio molecular dynamics simulations, phonon spectra, and elastic constants, respectively. In order to propose a practical synthesis approach, we built a CrAuTe2/graphene van der Waals heterostructure, and found that the heterostructure does not affect the magnetic properties of monolayer CrAuTe2. These findings appear promising for the future applications in nano-spintronics.
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Affiliation(s)
- Chaobin Jia
- Joint Center for Theoretical Physics (JCTP), Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
| | - Chao Jin
- Joint Center for Theoretical Physics (JCTP), Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
| | - Puyuan Shi
- Joint Center for Theoretical Physics (JCTP), Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
| | - Jingjuan Su
- Joint Center for Theoretical Physics (JCTP), Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
| | - Yungeng Zhang
- Joint Center for Theoretical Physics (JCTP), Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
| | - Xianghong Niu
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
| | - Bing Wang
- Joint Center for Theoretical Physics (JCTP), Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
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42
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Zhao Y, Lei Z, Wang Y, Yan W, Tan R, Jing T, Sun Q. Theoretical prediction of two-dimensional ferromagnetic Mn 2X 2 (X = As, Sb) with strain-controlled magnetocrystalline anisotropy. Phys Chem Chem Phys 2024; 26:2324-2331. [PMID: 38165825 DOI: 10.1039/d3cp03691j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Two-dimensional (2D) magnetic materials with large and tunable magnetocrystalline anisotropy (MCA) provide unique opportunities to develop various spintronic devices. We, herein, propose an experimentally feasible 2D material platform, Mn2X2 (X = As, Sb), which is a family of intrinsic ferromagnet. Using first-principles calculations, we show that 2D Mn2X2 (X = As, Sb) with a robust ferromagnetic ground state exhibits not only a large perpendicular magnetic anisotropy (PMA), but also significant strain-driven modulation behaviors under external biaxial strain. The analysis of the results demonstrates that the dominant contribution to the change of MCA of Mn2As2 and Mn2Sb2 primarily arises from the Mn and Sb atoms, respectively. Moreover, we reveal that the underlying origin is the competitive mechanism for the spin-orbit coupling (SOC) between different orbitals and spin channels. These findings indicate that 2D Mn2X2 (X = As, Sb) provides a promising material platform for the next generation of ultra-low energy memory devices.
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Affiliation(s)
- Yi Zhao
- School of Science, Shandong Jianzhu University, Jinan, Shandong 250101, China.
| | - Zesen Lei
- School of Science, Shandong Jianzhu University, Jinan, Shandong 250101, China.
| | - Yonghao Wang
- School of Science, Shandong Jianzhu University, Jinan, Shandong 250101, China.
| | - Wei Yan
- School of Science, Shandong Jianzhu University, Jinan, Shandong 250101, China.
| | - Ruishan Tan
- School of Science, Shandong Jianzhu University, Jinan, Shandong 250101, China.
| | - Tao Jing
- College of Science, Kaili University, Kaili, Guizhou 556011, China
| | - Qilong Sun
- School of Science, Shandong Jianzhu University, Jinan, Shandong 250101, China.
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43
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Yang X, Dong S. Oxidation tuning of ferroic transitions in Gd2C monolayer. J Chem Phys 2024; 160:014705. [PMID: 38174798 DOI: 10.1063/5.0177722] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2023] [Accepted: 12/06/2023] [Indexed: 01/05/2024] Open
Abstract
Tuning of ferroic phases provides great opportunities for material functionalities, especially in two-dimensional materials. Here, a 4f rare-earth carbide Gd2C monolayer is predicted to be a ferromagnetic metal with large magnetization, inherited from its bulk property. Based on first-principles calculations, we propose a strategy that the surface passivation can effectively tune its ferroicity, namely, switching among ferromagnetic, antiferromagnetic, and ferroelectric phases. Metal-insulator transition also occurs accompanying these ferroic transitions. Our calculation also suggests that the magneto-optic Kerr effect and second harmonic generation are effective methods in monitoring these phase transitions.
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Affiliation(s)
- Xinyu Yang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Shuai Dong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
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44
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Chen X, Zhang X, Xiang G. Recent advances in two-dimensional intrinsic ferromagnetic materials Fe 3X( X=Ge and Ga)Te 2 and their heterostructures for spintronics. NANOSCALE 2024; 16:527-554. [PMID: 38063022 DOI: 10.1039/d3nr04977a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Owing to their atomic thicknesses, atomically flat surfaces, long-range spin textures and captivating physical properties, two-dimensional (2D) magnetic materials, along with their van der Waals heterostructures (vdWHs), have attracted much interest for the development of next-generation spin-based materials and devices. As an emergent family of intrinsic ferromagnetic materials, Fe3X(X=Ge and Ga)Te2 has become a rising star in the fields of condensed matter physics and materials science owing to their high Curie temperature and large perpendicular magnetic anisotropy. Herein, we aim to comprehensively summarize the recent progress on 2D Fe3X(X=Ge and Ga)Te2 and their vdWHs and provide a panorama of their physical properties and underlying mechanisms. First, an overview of Fe3X(X=Ge and Ga)Te2 is presented in terms of crystalline and electronic structures, distinctive physical properties and preparation methods. Subsequently, the engineering of electronic and spintronic properties of Fe3X(X=Ge and Ga)Te2 by diverse means, including strain, gate voltage, substrate and patterning, is surveyed. Then, the latest advances in spintronic devices based on 2D Fe3X(X=Ge and Ga)Te2 vdWHs are discussed and elucidated in detail, including vdWH devices that exploit the exchange bias effect, magnetoresistance effect, spin-orbit torque effect, magnetic proximity effect and Dzyaloshinskii-Moriya interaction. Finally, the future outlook is given in terms of efficient large-scale fabrication, intriguing physics and important technological applications of 2D Fe3X(X=Ge and Ga)Te2 and their vdWHs. Overall, this study provides an overview to support further studies of emergent 2D Fe3X(X=Ge and Ga)Te2 materials and related vdWH devices for basic science and practical applications.
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Affiliation(s)
- Xia Chen
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Xi Zhang
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Gang Xiang
- College of Physics, Sichuan University, Chengdu 610064, China.
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45
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Singh AK, Gao W, Deb P. Tunable long-range spin transport in a van der Waals Fe 3GeTe 2/WSe 2/Fe 3GeTe 2 spin valve. Phys Chem Chem Phys 2024; 26:895-902. [PMID: 38087955 DOI: 10.1039/d3cp04955h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.
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Affiliation(s)
- Anil Kumar Singh
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur 784028, India.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 639798, Singapore
| | - Pritam Deb
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur 784028, India.
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46
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Liu Z, Zhou B, Wang X, Mi W. Band inversion and switchable magnetic properties of two-dimensional RuClF/WSe 2 van der Waals heterostructures. Phys Chem Chem Phys 2024; 26:1135-1147. [PMID: 38099407 DOI: 10.1039/d3cp05545k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures have potential applications in new low-dimensional spintronic devices owing to their unique electronic properties and magnetic anisotropy energies (MAEs). The electronic structures and magnetic properties of RuClF/WSe2 heterostructure are calculated using first-principles calculations. The most stable RuClF/WSe2 heterostructure is selected for property analysis. RuClF/WSe2 heterostructure has half-metallicity. Considering spin-orbit coupling (SOC), band inversion is present in the RuClF/WSe2 heterostructure, which is also demonstrated by the weight of the energy contributions. The local density of states (LDOS) of the edge states can provide strong evidence that the RuClF/WSe2 heterostructure has topological properties. The MAE of RuClF/WSe2 heterostructure is in-plane magnetic anisotropy (IMA), which mainly originates from the contribution of matrix element difference in Ru (dxy, dx2-y2) orbitals. The electronic properties and MAE of RuClF/WSe2 heterostructure can be regulated by biaxial strains and electric fields. The band inversion phenomenon is enhanced at electric fields in the opposite direction, which is also modified at different biaxial strains. However, the band inversion phenomenon disappears at the biaxial strains of 6% and an electric field of 0.5 V Å-1. The MAE of RuClF/WSe2 heterostructure is transformed from IMA into perpendicular magnetic anisotropy (PMA) at certain compressive strains and positively directed electric fields. The above results indicate that the RuClF/WSe2 heterostructure has potential applications in spintronic devices.
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Affiliation(s)
- Ziyu Liu
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Wenbo Mi
- Department of Applied Physics, School of Science, Tianjin University, Tianjin 300354, China.
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47
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Yang S, Xu X, Han B, Gu P, Guzman R, Song Y, Lin Z, Gao P, Zhou W, Yang J, Chen Z, Ye Y. Controlling the 2D Magnetism of CrBr 3 by van der Waals Stacking Engineering. J Am Chem Soc 2023; 145:28184-28190. [PMID: 38096486 DOI: 10.1021/jacs.3c10777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and preparing device-ready 2D magnets with controllable magnetic orders remain elusive. Here, we demonstrate the effective control of interlayer stacking in exfoliated CrBr3 via thermally assisted strain engineering. The stable interlayer ferromagnetic (FM), antiferromagnetic (AFM), and FM-AFM coexistent ground states confirmed by the magnetic circular dichroism measurements are realized. Combined with the first-principles calculations, the atomically resolved imaging technique reveals the correlation between magnetic order and interlayer stacking order in CrBr3 flakes unambiguously. A tunable exchange bias effect is obtained in the mixed phase of FM and AFM states. This work will introduce new magnetic properties by controlling the stacking order and sequence of 2D magnets, providing ample opportunities for their application in spintronic devices.
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Affiliation(s)
- Shiqi Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Xiaolong Xu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Bo Han
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Pingfan Gu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Roger Guzman
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yiwen Song
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhongchong Lin
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Gao
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing 100871, China
| | - Wu Zhou
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zuxin Chen
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing 100871, China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, Jiangsu 226010, China
- Liaoning Academy of Materials, Shenyang 110167, China
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Fu Z, Samarawickrama PI, Zhu Y, Mao Z, Wang W, Watanabe K, Taniguchi T, Tang J, Ackerman J, Tian J. Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating. NANO LETTERS 2023; 23:11866-11873. [PMID: 38079362 DOI: 10.1021/acs.nanolett.3c03926] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI3-based tunnel junctions. The few-layer CrI3-based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI3. We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI3 via gating-induced Jahn-Teller distortion. Our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.
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Affiliation(s)
- ZhuangEn Fu
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Piumi I Samarawickrama
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Yanglin Zhu
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Zhiqiang Mao
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Wenyong Wang
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jinke Tang
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
| | - John Ackerman
- Department of Chemical and Biomedical Engineering, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Jifa Tian
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
- Center for Quantum Information Science and Engineering, University of Wyoming, Laramie, Wyoming 82071, United States
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49
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Zhang F, Zhang J, Fang D, Zhang Y, Wang D. Unusual magnetic interaction in CrTe: insights from machine-learning and empirical models. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:135804. [PMID: 38091625 DOI: 10.1088/1361-648x/ad154f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2023] [Accepted: 12/13/2023] [Indexed: 12/28/2023]
Abstract
Chromium telluride (CrTe) has received much attention due to its small magnetic anisotropy, which hosts the potential for complex magnetic structures. However, its magnetic properties have been relatively unexplored with numerical simulations, as the magnetic interactions inside are quite unusual. In this study, we employ both a machine-learning model and an empirical model to investigate the magnetic phase transitions of bulk and monolayer CrTe, revealing the existence of unusual magnetic interaction, which can be captured by the machine-learning model but not the simple empirical model. Furthermore, our results also demonstrate that magnetic moments further apart exhibit stronger interactions than those in closer proximity, deviating from typical behavior.
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Affiliation(s)
- F Zhang
- School of Microelectronics & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
- Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - J Zhang
- School of Microelectronics & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
- Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - D Fang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Y Zhang
- School of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - D Wang
- School of Microelectronics & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
- Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
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50
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Miao W, Zhen W, Tan C, Wang J, Nie Y, Wang H, Wang L, Niu Q, Tian M. Nonreciprocal Antisymmetric Magnetoresistance and Unconventional Hall Effect in a Two-Dimensional Ferromagnet. ACS NANO 2023; 17:25449-25458. [PMID: 38051216 DOI: 10.1021/acsnano.3c08954] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Two-dimensional (2D) ferromagnets with high Curie temperatures provide a rich platform for exploring the exotic phenomena of 2D magnetism and the potential of spintronic devices. As a prototypical 2D ferromagnet, Fe5-xGeTe2 has recently been reported to possess a high Curie temperature with Tc ∼ 310 K, making it a promising candidate for advancing 2D nanoelectromechanical systems. However, due to its intricate magnetic ground state and magnetic domains, a thorough study of the transport behavior related to its lattice and domain structures is still lacking. Here, we report a nonreciprocal antisymmetric magnetoresistance in Fe5-xGeTe2 nanoflakes observed under an external magnetic field between 85-120 K. Through a detailed examination of its temperature, field orientation, and sample thickness dependence, we trace its origin to an additional electric field induced by the domain structure. This differs from the previously reported antisymmetric magnetoresistance due to thickness inhomogeneity. Notably, at lower temperatures, we observed an unconventional Hall effect (UHE), which can be attributed to the Dzyaloshinskii-Moriya interaction (DMI) resulting from the non-coplanar magnetic moment structure. The pronounced influence of sample thickness on magneto-transport properties underscores the competition between magnetic anisotropy and DMI in Fe5-xGeTe2 flakes with varying thicknesses. Our findings provide a deeper understanding of the magneto-transport behavior of the exotic magnetic structure in 2D ferromagnetic materials, which may benefit future spintronic device applications.
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Affiliation(s)
- Weiting Miao
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei 230026, Anhui, China
| | - Weili Zhen
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, Anhui, China
| | - Cheng Tan
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | - Jie Wang
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, Anhui, China
| | - Yong Nie
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, Anhui, China
| | - Hengning Wang
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, Anhui, China
| | - Lan Wang
- Lab of Low Dimensional Magnetism and Spintronic Devices, School of Physics, Hefei University of Technology, Hefei 230009, Anhui, China
| | - Qun Niu
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, Anhui, China
| | - Mingliang Tian
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, Anhui, China
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei 230601, Anhui, China
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