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Liao C, Bernardi S, Bailey CG, Chao IH, Chien SY, Wang G, Sun YH, Tang S, Zheng J, Yi J, Yu MH, Russo SP, Yen HW, McCamey DR, Kennedy BJ, Widmer-Cooper A, Chueh CC, Ho-Baillie AWY. Piperidine and Pyridine Series Lead-Free Dion-Jacobson Phase Tin Perovskite Single Crystals and Their Applications for Field-Effect Transistors. ACS NANO 2024; 18:14176-14186. [PMID: 38768371 DOI: 10.1021/acsnano.3c11125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Two-dimensional (2D) organic-inorganic metal halide perovskites have gained immense attention as alternatives to three-dimensional (3D) perovskites in recent years. The hydrophobic spacers in the layered structure of 2D perovskites make them more moisture-resistant than 3D perovskites. Moreover, they exhibit unique anisotropic electrical transport properties due to a structural confinement effect. In this study, four lead-free Dion-Jacobson (DJ) Sn-based phase perovskite single crystals, 3AMPSnI4, 4AMPSnI4, 3AMPYSnI4, and 4AMPYSnI4 [AMP = (aminomethyl)-piperidinium, AMPY = (aminomethyl)pyridinium] are reported. Results reveal structural differences between them impacting the resulting optical properties. Namely, higher octahedron distortion results in a higher absorption edge. Density functional theory (DFT) is also performed to determine the trends in energy band diagrams, exciton binding energies, and formation energies due to structural differences among the four single crystals. Finally, a field-effect transistor (FET) based on 4AMPSnI4 is demonstrated with a respectable hole mobility of 0.57 cm2 V-1 s-1 requiring a low threshold voltage of only -2.5 V at a drain voltage of -40 V. To the best of our knowledge, this is the third DJ-phase perovskite FET reported to date.
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Affiliation(s)
- Chwenhaw Liao
- School of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia
- Sydney Nano, The University of Sydney, Sydney, New South Wales 2006, Australia
| | - Stefano Bernardi
- ARC Centre of Excellence in Exciton Science, School of Chemistry, The University of Sydney, Sydney, New South Wales 2006, Australia
| | - Christopher G Bailey
- School of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia
- Sydney Nano, The University of Sydney, Sydney, New South Wales 2006, Australia
- ARC Centre of Excellence in Exciton Science, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - I Hsiang Chao
- Department of Chemical Engineering, National Taiwan University, Taipei 106, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 106, Taiwan
| | - Su-Ying Chien
- Instrumentation Center, National Taiwan University, Taipei 106, Taiwan
| | - Guoliang Wang
- School of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia
- Sydney Nano, The University of Sydney, Sydney, New South Wales 2006, Australia
| | - Yi-Hsuan Sun
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 106, Taiwan
- Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
| | - Shi Tang
- School of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia
- Sydney Nano, The University of Sydney, Sydney, New South Wales 2006, Australia
| | - Jianghui Zheng
- School of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia
- Sydney Nano, The University of Sydney, Sydney, New South Wales 2006, Australia
| | - Jianpeng Yi
- School of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia
- Sydney Nano, The University of Sydney, Sydney, New South Wales 2006, Australia
| | - Ming-Hsuan Yu
- Department of Chemical Engineering, National Taiwan University, Taipei 106, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 106, Taiwan
| | - Salvy P Russo
- ARC Centre of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Hung-Wei Yen
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 106, Taiwan
- Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
| | - Dane R McCamey
- ARC Centre of Excellence in Exciton Science, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Brendan James Kennedy
- School of Chemistry, The University of Sydney, Sydney, New South Wales 2006, Australia
| | - Asaph Widmer-Cooper
- Sydney Nano, The University of Sydney, Sydney, New South Wales 2006, Australia
- ARC Centre of Excellence in Exciton Science, School of Chemistry, The University of Sydney, Sydney, New South Wales 2006, Australia
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 106, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 106, Taiwan
| | - Anita W Y Ho-Baillie
- School of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia
- Sydney Nano, The University of Sydney, Sydney, New South Wales 2006, Australia
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Hazra V, Mandal A, Bhattacharyya S. Optoelectronic insights of lead-free layered halide perovskites. Chem Sci 2024; 15:7374-7393. [PMID: 38784758 PMCID: PMC11110173 DOI: 10.1039/d4sc01429d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Accepted: 04/22/2024] [Indexed: 05/25/2024] Open
Abstract
Two-dimensional organic-inorganic halide perovskites have emerged as promising candidates for a multitude of optoelectronic technologies, owing to their versatile structure and electronic properties. The optical and electronic properties are harmoniously integrated with both the inorganic metal halide octahedral slab, and the organic spacer layer. The inorganic octahedral layers can also assemble into periodically stacked nanoplatelets, which are interconnected by the organic ammonium cation, resulting in the formation of a superlattice or superstructure. In this perspective, we explore the structural, electronic, and optical properties of lead-free hybrid halides, and the layered halide perovskite single crystals and nanostructures, expanding our understanding of the diverse applications enabled by these versatile structures. The optical properties of the layered halide perovskite single crystals and superlattices are a function of the organic spacer layer thickness, the metal center with either divalent or a combination of monovalent and trivalent cations, and the halide composition. The distinct absorption and emission features are guided by the structural deformation, electron-phonon coupling, and the polaronic effect. Among the diverse optoelectronic possibilities, we have focused on the photodetection capability of layered halide perovskite single crystals, and elucidated the descriptors such as excitonic band gap, effective mass, carrier mobility, Rashba splitting, and the spin texture that decides the direct component of the optical transitions.
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Affiliation(s)
- Vishwadeepa Hazra
- Department of Chemical Sciences, Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata Mohanpur 741246 India
| | - Arnab Mandal
- Department of Chemical Sciences, Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata Mohanpur 741246 India
| | - Sayan Bhattacharyya
- Department of Chemical Sciences, Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata Mohanpur 741246 India
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3
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Xue H, Chen Z, Tao S, Brocks G. Defects in Halide Perovskites: Does It Help to Switch from 3D to 2D? ACS ENERGY LETTERS 2024; 9:2343-2350. [PMID: 38751970 PMCID: PMC11091873 DOI: 10.1021/acsenergylett.4c00702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/10/2024] [Revised: 04/16/2024] [Accepted: 04/18/2024] [Indexed: 05/18/2024]
Abstract
Two-dimensional (2D) organic-inorganic hybrid iodide perovskites have been put forward in recent years as stable alternatives to their three-dimensional (3D) counterparts. Using first-principles calculations, we demonstrate that equilibrium concentrations of point defects in the 2D perovskites PEA2PbI4, BA2PbI4, and PEA2SnI4 (PEA, phenethylammonium; BA, butylammonium) are much lower than in comparable 3D perovskites. Bonding disruptions by defects are more destructive in 2D than in 3D networks, making defect formation energetically more costly. The stability of 2D Sn iodide perovskites can be further enhanced by alloying with Pb. Should, however, point defects emerge in sizable concentrations as a result of nonequilibrium growth conditions, for instance, then those defects likely hamper the optoelectronic performance of the 2D perovskites, as they introduce deep traps. We suggest that trap levels are responsible for the broad sub-bandgap emission in 2D perovskites observed in experiments.
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Affiliation(s)
- Haibo Xue
- Materials
Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands
- Center
for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands
| | - Zehua Chen
- Materials
Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands
- Center
for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands
| | - Shuxia Tao
- Materials
Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands
- Center
for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands
| | - Geert Brocks
- Materials
Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands
- Center
for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands
- Computational
Chemical Physics, Faculty of Science and Technology and MESA+ Institute
for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
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4
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Yang W, Zhang K, Yuan W, Zhang L, Qin C, Wang H. Enhancing Stability and Performance in Tin-Based Perovskite Field-Effect Transistors Through Hydrogen Bond Suppression of Organic Cation Migration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313461. [PMID: 38532710 DOI: 10.1002/adma.202313461] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Revised: 03/06/2024] [Indexed: 03/28/2024]
Abstract
Ion migration poses a substantial challenge in perovskite transistors, exerting detrimental effects on hysteresis and operational stability. This study focuses on elucidating the influence of ion migration on the performance of tin-based perovskite field-effect transistors (FETs). It is revealed that the high background carrier density in FASnI3 FETs arises not only from the oxidation of Sn2+ but also from the migration of FA+ ions. The formation of hydrogen bonding between FA+ and F- ions efficiently inhibits ion migration, leading to a reduction in background carrier density and an improvement in the operational stability of the transistors. The strategy of hydrogen bond is extended to fluorine-substituted additives to improve device performance. The incorporation of 4-fluorophenethylammonium iodide additives into FETs significantly minimizes the shift of turn-on voltage during cyclic measurements. Notably, an effective mobility of up to 30 cm2 V-1 s-1 with an Ion/off ratio of 107 is achieved. These findings hold promising potential for advancing tin-based perovskite technology in the field of electronics.
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Affiliation(s)
- Wenshu Yang
- Key Laboratory of Automobile Materials of Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Kai Zhang
- Key Laboratory of Automobile Materials of Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Wei Yuan
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, China
| | - Lijun Zhang
- Key Laboratory of Automobile Materials of Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Chuanjiang Qin
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, China
| | - Haibo Wang
- Key Laboratory of Automobile Materials of Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
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5
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Wang S, Kalyanasundaram S, Gao L, Ling Z, Zhou Z, Bonn M, Blom PWM, Wang HI, Pisula W, Marszalek T. Unveiling the role of linear alkyl organic cations in 2D layered tin halide perovskite field-effect transistors. MATERIALS HORIZONS 2024; 11:1177-1187. [PMID: 38323649 DOI: 10.1039/d3mh01883k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
Two-dimensional (2D) tin halide perovskites are promising semiconductors for field-effect transistors (FETs) owing to their fascinating electronic properties. However, the correlation between the chemical nature of organic cations and charge carrier transport is still far from understanding. In this study, the influence of chain length of linear alkyl ammonium cations on film morphology, crystallinity, and charge transport in 2D tin halide perovskites is investigated. The carbon chain lengths of the organic spacers vary from propylammonium to heptanammonium. The increase of alkyl chain length leads to enhanced local charge carrier transport in the perovskite film with mobilities of up to 8 cm2 V-1 s-1, as confirmed by optical-pump terahertz spectroscopy. A similar improved macroscopic charge transport is also observed in FETs, only to the chain length of HA, due to the synergistic enhancement of film morphology and molecular organization. While the mobility increases with the temperature rise from 100 K to 200 K due to the thermally activated transport mechanism, the device performance decreases in the temperature range of 200 K to 295 K because of ion migration. These results provide guidelines on rational design principles of organic spacer cations for 2D tin halide perovskites and contribute to other optoelectronic applications.
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Affiliation(s)
- Shuanglong Wang
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | | | - Lei Gao
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Zhitian Ling
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Zhiwen Zhou
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Mischa Bonn
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Paul W M Blom
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Hai I Wang
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Wojciech Pisula
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
- Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, Poland
| | - Tomasz Marszalek
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
- Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, Poland
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6
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Li Y, Zhou J, Tian Y, Wei Z, Shen G. 2D Ruddlesden-Popper Sn-Based Perovskite Weak Light Detector for Image Transmission and Reflection Imaging. SMALL METHODS 2024; 8:e2300026. [PMID: 37035949 DOI: 10.1002/smtd.202300026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Revised: 02/28/2023] [Indexed: 06/19/2023]
Abstract
2D Ruddlesden-Popper Sn-based perovskite has excellent optoelectronic properties and weak halide ion migration characteristics, making it an ideal candidate for weak light detection, which has great potential in light communication, and medical applications. Although Sn-based perovskite photodetectors are developed, weak light detection is not demonstrated yet. Herein, a high-performance self-powered photodetector with the capability to detect ultra-weak light signals is designed based on vertical PEA2 SnI4 /Si nanowires heterojunction. Due to the low dark current and high light absorption efficiency, the devices present a remarkable responsivity of 42.4 mA W-1 , a high detectivity of 8 × 1011 Jones, and an ultralow noise current of 2.47 × 10-13 A Hz-1/2 . Especially, the device exhibits a high on-off current ratio of 18.6 at light signals as low as 4.60 nW cm-2 , revealing the capacity to detect ultra-weak light. The device is applied as a signal receiver and realized image transmission in light communication system. Moreover, high-resolution reflection imaging and multispectral imaging are obtained using the device as the sensor in the imaging system. These results reveal that 2D PEA2 SnI4 -based self-powered photodetectors with low-noise current possess enormous potential in future weak light detection.
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Affiliation(s)
- Ying Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jingshu Zhou
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Yongzhi Tian
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhongming Wei
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
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Chen CH, Yu MH, Wang YY, Tseng YC, Chao IH, Ni IC, Lin BH, Lu YJ, Chueh CC. Enhancing the Performance of 2D Tin-Based Pure Red Perovskite Light-Emitting Diodes through the Synergistic Effect of Natural Antioxidants and Cyclic Molecular Additives. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2307774. [PMID: 38200683 DOI: 10.1002/smll.202307774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 12/27/2023] [Indexed: 01/12/2024]
Abstract
Tin (Sn)-based perovskites are being investigated in many optoelectronic applications given their similar valence electron configuration to that of lead-based perovskites and the potential environmental hazards of lead-based perovskites. However, the formation of high-quality Sn-based perovskite films faces several challenges, mainly due to the easy oxidation of Sn2+ to Sn4+ and the fast crystallization rate. Here, to develop an environmentally friendly process for Sn-based perovskite fabrication, a series of natural antioxidants are studied as additives and ascorbic acid (VitC) is found to have a superior ability to inhibit the oxidation problem. A common cyclic molecule, 18-Crown-6, is further added as a second additive, which synergizes with VitC to significantly reduce the nonradiative recombination pathways in the PEA2 SnI4 film. This synergistic effect greatly improves the performance of 2D red Sn-based PeLED, with a maximum external quantum efficiency of 1.87% (≈9 times that of the pristine device), a purer color, and better bias stability. This work demonstrates the potential of the dual-additive approach in enhancing the performance of 2D Sn-based PeLEDs, while the use of these environmentally friendly additives contributes to their future sustainability.
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Affiliation(s)
- Chiung-Han Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Ming-Hsuan Yu
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Yen-Yu Wang
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Yu-Cheng Tseng
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - I-Hsiang Chao
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - I-Chih Ni
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Yu-Jung Lu
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
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8
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Yang S, Wen J, Wu Y, Zhu H, Liu A, Hu Y, Noh YY, Chu J, Li W. Unlocking the Potential of Tin-Based Perovskites: Properties, Progress, and Applications in New-Era Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304626. [PMID: 37641178 DOI: 10.1002/smll.202304626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Revised: 08/10/2023] [Indexed: 08/31/2023]
Abstract
Electronics have greatly promoted the development of modern society and the exploration of new semiconducting materials with low cost and high mobility continues to attract interest in the advance of next-generation electronic devices. Among emerging semiconductors, the metal-halide perovskite, especially the nontoxic tin (Sn)-based candidates, has recently made breakthroughs in the field of diverse electronic devices due to its excellent charge transport properties and cost-effective large-area deposition capability at low temperatures. To enable a more comprehensive understanding of this emerging research field and promote the development of new-generation perovskite electronics, this review aims to provide an in-depth understanding with the discussion of unique physical properties of Sn-based perovskites and the summarization of recent research progress of Sn-based perovskite field-effect transistors (FETs) and diverse electronic devices. The unique character of negligible ion migration is also discussed, which is fundamentally different from the lead-based counterparts and provides a great prerequisite for device application. The following section highlights the potential broad applications of Sn-perovskite FETs as a competitive and feasible technology. Finally, an outlook and remaining challenges are given to advance the progression of Sn-based perovskite FETs, especially on the origin and solution of stability problems toward high-performance Sn-based perovskite electronics.
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Affiliation(s)
- Shuzhang Yang
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Jincheng Wen
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Yanqiu Wu
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Huihui Zhu
- Department of Chemistry, Northwestern University, Evanston, Illinois, 60208, USA
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Ao Liu
- Department of Chemistry, Northwestern University, Evanston, Illinois, 60208, USA
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Junhao Chu
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
- Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai, 200241, China
| | - Wenwu Li
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
- Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai, 200241, China
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9
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Zhang F, Shao M, Wang C, Wen W, Shi W, Qin M, Huang H, Wei X, Guo Y, Liu Y. Photoinduced Nonvolatile Memory Transistor Based on Lead-Free Perovskite Incorporating Fused π-Conjugated Organic Ligands. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307326. [PMID: 37849381 DOI: 10.1002/adma.202307326] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Revised: 09/20/2023] [Indexed: 10/19/2023]
Abstract
Perovskites field-effect transistors (PeFETs) have been intensively investigated for their application in detector and synapse. However, synapse based on PeFETs is still very difficult to integrate excellent charge carrier transporting ability, photosensitivity, and nonvolatile memory effects into one device, which is very important for developing bionic electronic devices and edge computing. Here, two-dimensional (2D) perovskites are synthesized by incorporating fused π-conjugated pyrene-O-ethyl-ammonium (POE) ligands and a systematic study is conducted to obtain enhanced performance and reliable PeFETs. The optimized (POE)2 SnI4 transistors display the hole mobility over 0.3 cm2 V-1 s-1 , high repeatability, and operational stability. Meanwhile, the derived photo memory devices show remarkable photoresponse, with a switching ratio higher than 105 , high visible light responsivity (>4 × 104 A W-1 ), and stable storage-erase cycles, as well as competitive retention performance (104 s). The photoinduced memory behavior can be benefiting from the insulating nature of quantum-well in 2D perovskite under dark and its excellent light sensitivity. The excellent photo memory behaviors have been maintained after 40 days in a N2 atmosphere. Finally, a 2D perovskite-only transistors with a multi-level memory behavior (16 distinct states) is described by controlling incident light pulse. This work provides broader attention toward 2D perovskite and optoelectronic application.
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Affiliation(s)
- Fan Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Mingchao Shao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Chengyu Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Wei Wen
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Wenkang Shi
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Mingcong Qin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Haojie Huang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xiaofang Wei
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
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10
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Zhou Z, Li Q, Chen M, Zheng X, Wu X, Lu X, Tao S, Zhao N. High-Mobility and Bias-Stable Field-Effect Transistors Based on Lead-Free Formamidinium Tin Iodide Perovskites. ACS ENERGY LETTERS 2023; 8:4496-4505. [PMID: 37854050 PMCID: PMC10580314 DOI: 10.1021/acsenergylett.3c01400] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 09/26/2023] [Indexed: 10/20/2023]
Abstract
Electronic devices based on tin halide perovskites often exhibit a poor operational stability. Here, we report an additive engineering strategy to realize high-performance and stable field-effect transistors (FETs) based on 3D formamidinium tin iodide (FASnI3) films. By comparatively studying the modification effects of two additives, i.e., phenethylammonium iodide and 4-fluorophenylethylammonium iodide via combined experimental and theoretical investigations, we unambiguously point out the general effects of phenethylammonium (PEA) and its fluorinated derivative (FPEA) in enhancing crystallization of FASnI3 films and the unique role of fluorination in reducing structural defects, suppressing oxidation of Sn2+ and blocking oxygen and water involved defect reactions. The optimized FPEA-modified FASnI3 FETs reach a record high field-effect mobility of 15.1 cm2/(V·s) while showing negligible hysteresis. The devices exhibit less than 10% and 3% current variation during over 2 h continuous bias stressing and 4200-cycle switching test, respectively, representing the best stability achieved so far for all Sn-based FETs.
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Affiliation(s)
- Zhiwen Zhou
- Department
of Electronic Engineering, The Chinese University
of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Qihua Li
- Materials
Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Mojun Chen
- Smart
Manufacturing Thrust, Systems Hub, The Hong
Kong University of Science and Technology, Guangzhou 511458, China
| | - Xuerong Zheng
- Department
of Electronic Engineering, The Chinese University
of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Xiao Wu
- Department
of Physics, The Chinese University of Hong
Kong, Shatin 999077, Hong Kong SAR, China
| | - Xinhui Lu
- Department
of Physics, The Chinese University of Hong
Kong, Shatin 999077, Hong Kong SAR, China
| | - Shuxia Tao
- Materials
Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Ni Zhao
- Department
of Electronic Engineering, The Chinese University
of Hong Kong, Shatin 999077, Hong Kong SAR, China
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11
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Sun J, Wang K, Ma K, Park JY, Lin ZY, Savoie BM, Dou L. Emerging Two-Dimensional Organic Semiconductor-Incorporated Perovskites─A Fascinating Family of Hybrid Electronic Materials. J Am Chem Soc 2023; 145:20694-20715. [PMID: 37706467 DOI: 10.1021/jacs.3c02143] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/15/2023]
Abstract
Halide perovskites have attracted a great amount of attention owing to their unique materials chemistry, excellent electronic properties, and low-cost manufacturing. Two-dimensional (2D) halide perovskites, originating from three-dimensional (3D) perovskite structures, are structurally more diverse and therefore create functional possibilities beyond 3D perovskites. The much less restrictive size constraints on the organic component of these hybrid materials particularly provide an exciting platform for designing unprecedented materials and functionalities at the molecular level. In this Perspective, we discuss the concept and recent development of a sub-class of 2D perovskites, namely, organic semiconductor-incorporated perovskites (OSiPs). OSiPs combine the electronic functionality of organic semiconductors with the soft and dynamic halide perovskite lattice, offering opportunities for tailoring the energy landscape, lattice and carrier dynamics, and electron/ion transport properties for various fundamental studies, as well as device applications. Specifically, we summarize recent advances in the design, synthesis, and structural analysis of OSiPs with various organic conjugated moieties as well as the application of OSiPs in photovoltaics, light-emitting devices, and transistors. Lastly, challenges and further opportunities for OSiPs in molecular design, integration of novel functionality, film quality, and stability issues are addressed.
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Affiliation(s)
- Jiaonan Sun
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Kang Wang
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Ke Ma
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jee Yung Park
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zih-Yu Lin
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Brett M Savoie
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Letian Dou
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
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12
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Vats G, Hodges B, Ferguson AJ, Wheeler LM, Blackburn JL. Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205459. [PMID: 36120918 DOI: 10.1002/adma.202205459] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Revised: 08/20/2022] [Indexed: 06/15/2023]
Abstract
Metal halide perovskite based materials have emerged over the past few decades as remarkable solution-processable optoelectronic materials with many intriguing properties and potential applications. These emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier-diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, recent progress toward memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality is reviewed.
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Affiliation(s)
- Gaurav Vats
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
- Department of Physics and Astronomy, Katholieke Universiteit Leuven, Celestijnenlaan 200D, Leuven, B-3001, Belgium
| | - Brett Hodges
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | | | - Lance M Wheeler
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
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13
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Metcalf I, Sidhik S, Zhang H, Agrawal A, Persaud J, Hou J, Even J, Mohite AD. Synergy of 3D and 2D Perovskites for Durable, Efficient Solar Cells and Beyond. Chem Rev 2023; 123:9565-9652. [PMID: 37428563 DOI: 10.1021/acs.chemrev.3c00214] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/11/2023]
Abstract
Three-dimensional (3D) organic-inorganic lead halide perovskites have emerged in the past few years as a promising material for low-cost, high-efficiency optoelectronic devices. Spurred by this recent interest, several subclasses of halide perovskites such as two-dimensional (2D) halide perovskites have begun to play a significant role in advancing the fundamental understanding of the structural, chemical, and physical properties of halide perovskites, which are technologically relevant. While the chemistry of these 2D materials is similar to that of the 3D halide perovskites, their layered structure with a hybrid organic-inorganic interface induces new emergent properties that can significantly or sometimes subtly be important. Synergistic properties can be realized in systems that combine different materials exhibiting different dimensionalities by exploiting their intrinsic compatibility. In many cases, the weaknesses of each material can be alleviated in heteroarchitectures. For example, 3D-2D halide perovskites can demonstrate novel behavior that neither material would be capable of separately. This review describes how the structural differences between 3D halide perovskites and 2D halide perovskites give rise to their disparate materials properties, discusses strategies for realizing mixed-dimensional systems of various architectures through solution-processing techniques, and presents a comprehensive outlook for the use of 3D-2D systems in solar cells. Finally, we investigate applications of 3D-2D systems beyond photovoltaics and offer our perspective on mixed-dimensional perovskite systems as semiconductor materials with unrivaled tunability, efficiency, and technologically relevant durability.
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Affiliation(s)
- Isaac Metcalf
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Siraj Sidhik
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Hao Zhang
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, Texas 77005, United States
| | - Ayush Agrawal
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
| | - Jessica Persaud
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
| | - Jin Hou
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Jacky Even
- Université de Rennes, INSA Rennes, CNRS, Institut FOTON - UMR 6082, 35708 Rennes, France
| | - Aditya D Mohite
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, Texas 77005, United States
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14
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Wang S, Bidinakis K, Haese C, Hasenburg FH, Yildiz O, Ling Z, Frisch S, Kivala M, Graf R, Blom PWM, Weber SAL, Pisula W, Marszalek T. Modification of Two-Dimensional Tin-Based Perovskites by Pentanoic Acid for Improved Performance of Field-Effect Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207426. [PMID: 36908090 DOI: 10.1002/smll.202207426] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Revised: 02/17/2023] [Indexed: 06/08/2023]
Abstract
Understanding and controlling the nucleation and crystallization in solution-processed perovskite thin films are critical to achieving high in-plane charge carrier transport in field-effect transistors (FETs). This work demonstrates a simple and effective additive engineering strategy using pentanoic acid (PA). Here, PA is introduced to both modulate the crystallization process and improve the charge carrier transport in 2D 2-thiopheneethylammonium tin iodide ((TEA)2 SnI4 ) perovskite FETs. It is revealed that the carboxylic group of PA is strongly coordinated to the spacer cation TEAI and [SnI6 ]4- framework in the perovskite precursor solution, inducing heterogeneous nucleation and lowering undesired oxidation of Sn2+ during the film formation. These factors contribute to a reduced defect density and improved film morphology, including lower surface roughness and larger grain size, resulting in overall enhanced transistor performance. The reduced defect density and decreased ion migration lead to a higher p-channel charge carrier mobility of 0.7 cm2 V-1 s-1 , which is more than a threefold increase compared with the control device. Temperature-dependent charge transport studies demonstrate a mobility of 2.3 cm2 V-1 s-1 at 100 K due to the diminished ion mobility at low temperatures. This result illustrates that the additive strategy bears great potential to realize high-performance Sn-based perovskite FETs.
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Affiliation(s)
- Shuanglong Wang
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | | | - Constantin Haese
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | | | - Okan Yildiz
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Zhitian Ling
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Sabine Frisch
- Organisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
| | - Milan Kivala
- Organisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
| | - Robert Graf
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Paul W M Blom
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Stefan A L Weber
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, Duesbergweg 10-14, 55128, Mainz, Germany
| | - Wojciech Pisula
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
- Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, Lodz, 90-924, Poland
| | - Tomasz Marszalek
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
- Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, Lodz, 90-924, Poland
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15
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Tsuji M, Sasase M, Iimura S, Kim J, Hosono H. Room-Temperature Solid-State Synthesis of Cs 3Cu 2I 5 Thin Films and Formation Mechanism for Its Unique Local Structure. J Am Chem Soc 2023; 145:11650-11658. [PMID: 37192284 DOI: 10.1021/jacs.3c01713] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
Blue-emitting Cs3Cu2I5 has attracted attention owing to its near-unity PL quantum yield and applications in DUV photodetectors and scintillators. Its PL properties originate from the unique local structure around the luminescent center, the [Cu2I5]3- polyhedron iodocuprate anion consisting of the edge-shared CuI3 triangle and the CuI4 tetrahedron dimer, which is isolated by Cs+ ions. We found that solid-state reactions between CsI and CuI occur near room temperature (RT) to form Cs3Cu2I5 and/or CsCu2I3 phases. High-quality thin films of these phases were obtained by the sequential deposition of CuI and CsI by thermal evaporation. We elucidated that the formation of interstitial Cu+ and the antisite of I- at the Cs+ site in the CsI crystal through Cu+ and I- diffusion results in the RT synthesis of Cs3Cu2I5. The unique structure formation of the luminescent center was revealed using a model based on the low packing density of the CsCl-type crystal structure, similar sizes of Cs+ and I- ions, and the high diffusivity of Cu+. The self-aligned patterning of the luminous regions on thin films was demonstrated.
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Affiliation(s)
- Masatake Tsuji
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Masato Sasase
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Soshi Iimura
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan
- National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
- Precursory Research for Embryonic Science and Technology (PRESTO), Kawaguchi, Saitama 332-0012, Japan
| | - Junghwan Kim
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
- Precursory Research for Embryonic Science and Technology (PRESTO), Kawaguchi, Saitama 332-0012, Japan
| | - Hideo Hosono
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan
- National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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16
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Chao IH, Yang YT, Yu MH, Chen CH, Liao CH, Lin BH, Ni IC, Chen WC, Ho-Baillie AWY, Chueh CC. Performance Enhancement of Lead-Free 2D Tin Halide Perovskite Transistors by Surface Passivation and Its Impact on Non-Volatile Photomemory Characteristics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207734. [PMID: 36794296 DOI: 10.1002/smll.202207734] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2022] [Revised: 01/29/2023] [Indexed: 05/18/2023]
Abstract
Two-dimensional (2D) tin (Sn)-based perovskites have recently received increasing research attention for perovskite transistor application. Although some progress is made, Sn-based perovskites have long suffered from easy oxidation from Sn2+ to Sn4+ , leading to undesirable p-doping and instability. In this study, it is demonstrated that surface passivation by phenethylammonium iodide (PEAI) and 4-fluorophenethylammonium iodide (FPEAI) effectively passivates surface defects in 2D phenethylammonium tin iodide (PEA2 SnI4 ) films, increases the grain size by surface recrystallization, and p-dopes the PEA2 SnI4 film to form a better energy-level alignment with the electrodes and promote charge transport properties. As a result, the passivated devices exhibit better ambient and gate bias stability, improved photo-response, and higher mobility, for example, 2.96 cm2 V-1 s-1 for the FPEAI-passivated films-four times higher than the control film (0.76 cm2 V-1 s-1 ). In addition, these perovskite transistors display non-volatile photomemory characteristics and are used as perovskite-transistor-based memories. Although the reduction of surface defects in perovskite films results in reduced charge retention time due to lower trap density, these passivated devices with better photoresponse and air stability show promise for future photomemory applications.
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Affiliation(s)
- I-Hsiang Chao
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Yu-Ting Yang
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Ming-Hsuan Yu
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Chiung-Han Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Chwen-Haw Liao
- School of Physics and University of Sydney Nano Institute, The University of Sydney, Sydney, NSW, 2006, Australia
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - I-Chih Ni
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 106, Taiwan
| | - Anita W Y Ho-Baillie
- School of Physics and University of Sydney Nano Institute, The University of Sydney, Sydney, NSW, 2006, Australia
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 106, Taiwan
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17
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Zhang Y, Huang Z, Jiang J. Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2186689. [PMID: 37007672 PMCID: PMC10054230 DOI: 10.1080/14686996.2023.2186689] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Revised: 02/16/2023] [Accepted: 02/28/2023] [Indexed: 06/19/2023]
Abstract
The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.
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Affiliation(s)
- Yi Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Zhuohui Huang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
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18
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Kumar S, Ghosh S, Kar P. Efficient Charge-Transfer Studies for Selective Detection of Bilirubin Biomolecules Using CsPbBr 3 as the Fluorescent Probe. J Phys Chem B 2023; 127:2138-2145. [PMID: 36880850 DOI: 10.1021/acs.jpcb.2c07517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/08/2023]
Abstract
Bright luminescence hybrid halide perovskite nanocrystals (PNCs) as a novel fluorophore class have not been broadly explored in biological sensing. Herein, we synthesized highly fluorescent CsPbBr3 PNCs through the LARP method using oleic acid and oleyl amine as capping ligands. Morphological and optical properties of as-synthesized PNCs were studied using transmission electron microscopy, X-ray diffraction, UV-vis, and emission spectroscopic analysis. Oleic acid- and oleyl amine-capped PNCs are employed for sensitive and selective detection of bilirubin (BR). A panel of characterizations (time-correlated single-photon count spectroscopy and photoluminescence (PL)) was carried out to investigate the detailed sensing study of PNCs-BR composite for quenching the PL emission of CsPbBr3 with BR. It has been noticed that the synthesized nanoparticles are highly capable of detecting BR and thus act as a biological material sensor.
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Affiliation(s)
- Sumit Kumar
- Department of Chemistry, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand 247667, India
| | - Sukanya Ghosh
- Department of Chemistry, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand 247667, India
| | - Prasenjit Kar
- Department of Chemistry, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand 247667, India
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19
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Liao CH, Mahmud MA, Ho-Baillie AWY. Recent progress in layered metal halide perovskites for solar cells, photodetectors, and field-effect transistors. NANOSCALE 2023; 15:4219-4235. [PMID: 36779248 DOI: 10.1039/d2nr06496k] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Metal halide perovskite materials demonstrate immense potential for photovoltaic and electronic applications. In particular, two-dimensional (2D) layered metal halide perovskites have advantages over their 3D counterparts in optoelectronic applications due to their outstanding stability, structural flexibility with a tunable bandgap, and electronic confinement effect. This review article first analyzes the crystallography of different 2D perovskite phases [the Ruddlesden-Popper (RP) phase, the Dion-Jacobson (DJ) phase, and the alternating cations in the interlayer space (ACI) phase] at the molecular level and compares their common electronic properties, such as out-of-plane conductivity, crucial to vertical devices. This paper then critically reviews the recent development of optoelectronic devices, namely solar cells, photodetectors and field effect transistors, based on layered 2D perovskite materials and points out their limitations and potential compared to their 3D counterparts. It also identifies the important application-specific future research directions for different optoelectronic devices providing a comprehensive view guiding new research directions in this field.
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Affiliation(s)
- Chwen-Haw Liao
- School of Physics, University of Sydney Nano Institute, The University of Sydney, Sydney, NSW, 2006, Australia.
| | - Md Arafat Mahmud
- School of Physics, University of Sydney Nano Institute, The University of Sydney, Sydney, NSW, 2006, Australia.
| | - Anita W Y Ho-Baillie
- School of Physics, University of Sydney Nano Institute, The University of Sydney, Sydney, NSW, 2006, Australia.
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20
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Li L, Liu X, Guo J, Ji H, Zhang F, Lou Z, Qin L, Hu Y, Hou Y, Teng F. Low-Operating-Voltage Two-Dimensional Tin Perovskite Field-Effect Transistors with Multilayer Gate Dielectrics Based on a Fluorinated Copolymer. J Phys Chem Lett 2023; 14:2223-2233. [PMID: 36820508 DOI: 10.1021/acs.jpclett.3c00072] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The fabrication of organic-inorganic perovskite field-effect transistors (FETs) with polymer gate dielectrics is challenging because of the solvent corrosion and wettability issues at interfaces. A few polymers have been integrated into perovskite transistors; however, these devices have high operating voltages due to low dielectric constants. Herein, poly(vinylidenefluoride-co-trifluoroethylene) (PVDF-TrFE) with a high dielectric constant is introduced into bottom-gate phenylethylammonium tin iodide perovskite [(PEA)2SnI4] FETs. Polytetrafluoroethylene (PTFE) and cross-linked poly(4-vinylphenol) (PVP) (CL-PVP) are used to address the issues of solvent corrosion and wettability. We design the PVDF-TrFE/PTFE and PVDF-TrFE/PTFE/CL-PVP dielectric layers, where the ferroelectric properties of PVDF-TrFE are reduced by PTFE. The (PEA)2SnI4 FETs operate at relatively low gate voltages, exhibiting good overall performance with average hole mobilities of 0.42 and 0.36 cm2 V-1 s-1. Our findings provide a feasible strategy for constructing low-operating-voltage perovskite FETs with large-dielectric-constant ferroelectric polymers as gate dielectrics by a solution processing technique.
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Affiliation(s)
- Longtao Li
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Xin Liu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Junhan Guo
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Hongyu Ji
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Fan Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Zhidong Lou
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Liang Qin
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Yufeng Hu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Yanbing Hou
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Feng Teng
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
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21
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Senanayak SP, Dey K, Shivanna R, Li W, Ghosh D, Zhang Y, Roose B, Zelewski SJ, Andaji-Garmaroudi Z, Wood W, Tiwale N, MacManus-Driscoll JL, Friend RH, Stranks SD, Sirringhaus H. Charge transport in mixed metal halide perovskite semiconductors. NATURE MATERIALS 2023; 22:216-224. [PMID: 36702888 DOI: 10.1038/s41563-022-01448-2] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2022] [Accepted: 11/24/2022] [Indexed: 06/18/2023]
Abstract
Investigation of the inherent field-driven charge transport behaviour of three-dimensional lead halide perovskites has largely remained challenging, owing to undesirable ionic migration effects near room temperature and dipolar disorder instabilities prevalent specifically in methylammonium-and-lead-based high-performing three-dimensional perovskite compositions. Here, we address both these challenges and demonstrate that field-effect transistors based on methylammonium-free, mixed metal (Pb/Sn) perovskite compositions do not suffer from ion migration effects as notably as their pure-Pb counterparts and reliably exhibit hysteresis-free p-type transport with a mobility reaching 5.4 cm2 V-1 s-1. The reduced ion migration is visualized through photoluminescence microscopy under bias and is manifested as an activated temperature dependence of the field-effect mobility with a low activation energy (~48 meV) consistent with the presence of the shallow defects present in these materials. An understanding of the long-range electronic charge transport in these inherently doped mixed metal halide perovskites will contribute immensely towards high-performance optoelectronic devices.
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Affiliation(s)
- Satyaprasad P Senanayak
- Nanoelectronics and Device Physics Lab, National Institute of Science Education and Research, School of Physical Sciences, HBNI, Jatni, India.
| | - Krishanu Dey
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Ravichandran Shivanna
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Department of Physics, Indian Institute of Technology Madras, Chennai, India
| | - Weiwei Li
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Nanjing University of Aeronautics and Astronautics, Nanjing, China
| | - Dibyajyoti Ghosh
- Department of Materials Science and Engineering, Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, India
| | - Youcheng Zhang
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, Department of Engineering, University of Cambridge, Cambridge, UK
| | - Bart Roose
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge, UK
| | - Szymon J Zelewski
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wrocław, Poland
| | - Zahra Andaji-Garmaroudi
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - William Wood
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Nikhil Tiwale
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA
| | | | - Richard H Friend
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Samuel D Stranks
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK.
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge, UK.
| | - Henning Sirringhaus
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK.
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22
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Chowdhury TH, Reo Y, Yusoff ARBM, Noh Y. Sn-Based Perovskite Halides for Electronic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203749. [PMID: 36257820 PMCID: PMC9685468 DOI: 10.1002/advs.202203749] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Indexed: 06/16/2023]
Abstract
Because of its less toxicity and electronic structure analogous to that of lead, tin halide perovskite (THP) is currently one of the most favorable candidates as an active layer for optoelectronic and electric devices such as solar cells, photodiodes, and field-effect transistors (FETs). Promising photovoltaics and FETs performances have been recently demonstrated because of their desirable electrical and optical properties. Nevertheless, THP's easy oxidation from Sn2+ to Sn4+ , easy formation of tin vacancy, uncontrollable film morphology and crystallinity, and interface instability severely impede its widespread application. This review paper aims to provide a basic understanding of THP as a semiconductor by highlighting the physical structure, energy band structure, electrical properties, and doping mechanisms. Additionally, the key chemical instability issues of THPs are discussed, which are identified as the potential bottleneck for further device development. Based on the understanding of the THPs properties, the key recent progress of THP-based solar cells and FETs is briefly discussed. To conclude, current challenges and perspective opportunities are highlighted.
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Affiliation(s)
- Towhid H. Chowdhury
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Youjin Reo
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Abd Rashid Bin Mohd Yusoff
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Yong‐Young Noh
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
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23
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Wang S, Frisch S, Zhang H, Yildiz O, Mandal M, Ugur N, Jeong B, Ramanan C, Andrienko D, Wang HI, Bonn M, Blom PWM, Kivala M, Pisula W, Marszalek T. Grain engineering for improved charge carrier transport in two-dimensional lead-free perovskite field-effect transistors. MATERIALS HORIZONS 2022; 9:2633-2643. [PMID: 35997011 DOI: 10.1039/d2mh00632d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Controlling crystal growth and reducing the number of grain boundaries are crucial to maximize the charge carrier transport in organic-inorganic perovskite field-effect transistors (FETs). Herein, the crystallization and growth kinetics of a Sn(II)-based 2D perovskite, using 2-thiopheneethylammonium (TEA) as the organic cation spacer, were effectively regulated by the hot-casting method. With increasing crystalline grain size, the local charge carrier mobility is found to increase moderately from 13 cm2 V-1 s-1 to 16 cm2 V-1 s-1, as inferred from terahertz (THz) spectroscopy. In contrast, the FET operation parameters, including mobility, threshold voltage, hysteresis, and subthreshold swing, improve substantially with larger grain size. The optimized 2D (TEA)2SnI4 transistor exhibits hole mobility of up to 0.34 cm2 V-1 s-1 at 295 K and a higher value of 1.8 cm2 V-1 s-1 at 100 K. Our work provides an important insight into the grain engineering of 2D perovskites for high-performance FETs.
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Affiliation(s)
- Shuanglong Wang
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Sabine Frisch
- Organisch-Chemisches Institut, Centre for Advanced Materials, Ruprecht-Karls-Universität Heidelberg, 69120 Heidelberg, Germany
| | - Heng Zhang
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Okan Yildiz
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Mukunda Mandal
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Naz Ugur
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Beomjin Jeong
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Charusheela Ramanan
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
- Department of Physics and Astronomy, Faculty of Sciences, Vrije Universiteit Amsterdam, De Boelelaan 1081, 1081 HV Amsterdam, Netherlands
| | - Denis Andrienko
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Hai I Wang
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Mischa Bonn
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Paul W M Blom
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
| | - Milan Kivala
- Organisch-Chemisches Institut, Centre for Advanced Materials, Ruprecht-Karls-Universität Heidelberg, 69120 Heidelberg, Germany
| | - Wojciech Pisula
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
- Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, Poland
| | - Tomasz Marszalek
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.
- Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, Poland
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24
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Review on Perovskite Semiconductor Field‑Effect Transistors and Their Applications. NANOMATERIALS 2022; 12:nano12142396. [PMID: 35889621 PMCID: PMC9322712 DOI: 10.3390/nano12142396] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Revised: 06/29/2022] [Accepted: 07/02/2022] [Indexed: 12/10/2022]
Abstract
Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.
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25
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Lin CH, Hu L, Guan X, Kim J, Huang CY, Huang JK, Singh S, Wu T. Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108616. [PMID: 34995372 DOI: 10.1002/adma.202108616] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Revised: 12/22/2021] [Indexed: 06/14/2023]
Abstract
Contact engineering is a prerequisite for achieving desirable functionality and performance of semiconductor electronics, which is particularly critical for organic-inorganic hybrid halide perovskites due to their ionic nature and highly reactive interfaces. Although the interfaces between perovskites and charge-transporting layers have attracted lots of attention due to the photovoltaic and light-emitting diode applications, achieving reliable perovskite/electrode contacts for electronic devices, such as transistors and memories, remains as a bottleneck. Herein, a critical review on the elusive nature of perovskite/electrode interfaces with a focus on the interfacial electrochemistry effects is presented. The basic guidelines of electrode selection are given for establishing non-polarized interfaces and optimal energy level alignment for perovskite materials. Furthermore, state-of-the-art strategies on interface-related electrode engineering are reviewed and discussed, which aim at achieving ohmic transport and eliminating hysteresis in perovskite devices. The role and multiple functionalities of self-assembled monolayers that offer a unique approach toward improving perovskite/electrode contacts are also discussed. The insights on electrode engineering pave the way to advancing stable and reliable perovskite devices in diverse electronic applications.
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Affiliation(s)
- Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jiyun Kim
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Simrjit Singh
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
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26
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Liu Y, Chen PA, Qiu X, Guo J, Xia J, Wei H, Xie H, Hou S, He M, Wang X, Zeng Z, Jiang L, Liao L, Hu Y. Doping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices. iScience 2022; 25:104109. [PMID: 35402868 PMCID: PMC8983347 DOI: 10.1016/j.isci.2022.104109] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2022] [Revised: 02/25/2022] [Accepted: 03/14/2022] [Indexed: 11/15/2022] Open
Abstract
Doping is an important technique for semiconductor materials and devices, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we demonstrate a facile way to dope two-dimensional Sn-based perovskite (PEA)2SnI4 by incorporating SnI4 in the precursor solutions. It is observed that Sn4+ produces p-doping effect on the perovskite, which increases the electrical conductivity by 105 times. The dopant SnI4 is also found to improve the film morphology of (PEA)2SnI4, leading to reduced trap states. This doping technique allows us to improve the room temperature mobility of (PEA)2SnI4 field-effect transistors from 0.25 to 0.68 cm2 V-1 s-1 thanks to reduced trapping effects in the doped devices. Moreover, the doping technique enables the characterization and improvement of the thermoelectric performance of (PEA)2SnI4 films, which show a high power factor of 3.92 μW m-1 K-2 at doping ratio of 5 mol %.
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Affiliation(s)
- Yu Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China.,Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
| | - Ping-An Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xincan Qiu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jing Guo
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jiangnan Xia
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Huan Wei
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Haihong Xie
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Shijin Hou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Mai He
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xiao Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zebing Zeng
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Liao
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuanyuan Hu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China.,Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
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27
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Karoui S, Chouaib H, Kamoun S. Synthesis, crystal structure and phase transition in a perovskite type (CH3NH3)2M(X)2(Y)2(M=Sn; X=SCN; Y=Cl). J Mol Struct 2022. [DOI: 10.1016/j.molstruc.2021.132206] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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28
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High-performance hysteresis-free perovskite transistors through anion engineering. Nat Commun 2022; 13:1741. [PMID: 35365628 PMCID: PMC8975846 DOI: 10.1038/s41467-022-29434-x] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2021] [Accepted: 03/16/2022] [Indexed: 11/08/2022] Open
Abstract
Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm2 V-1 s-1, current on/off ratios exceeding 107, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.
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29
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Kim J, Shiah Y, Sim K, Iimura S, Abe K, Tsuji M, Sasase M, Hosono H. High-Performance P-Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D-3D Core-Shell Structure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104993. [PMID: 34927379 PMCID: PMC8844482 DOI: 10.1002/advs.202104993] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2021] [Indexed: 05/29/2023]
Abstract
Metal halide perovskites (MHPs) are plausible candidates for practical p-type semiconductors. However, in thin film transistor (TFT) applications, both 2D PEA2 SnI4 and 3D FASnI3 MHPs have different drawbacks. In 2D MHP, the TFT mobility is seriously reduced by grain-boundary issues, whereas 3D MHP has an uncontrollably high hole density, which results in quite a large threshold voltage (Vth ). To overcome these problems, a new concept based on a 2D-3D core-shell structure is herein proposed. In the proposed structure, a 3D MHP core is fully isolated by a 2D MHP, providing two desirable effects as follows. (i) Vth can be independently controlled by the 2D component, and (ii) the grain-boundary resistance is significantly improved by the 2D/3D interface. Moreover, SnF2 additives are used, and they facilitate the formation of the 2D/3D core-shell structure. Consequently, a high-performance p-type Sn-based MHP TFT with a field-effect mobility of ≈25 cm2 V-1 s-1 is obtained. The voltage gain of a complementary metal oxide semiconductor (CMOS) inverter comprising an n-channel InGaZnOx TFT and a p-channel Sn-MHP TFT is ≈200 V/V at VDD = 20 V. Overall, the proposed 2D/3D core-shell structure is expected to provide a new route for obtaining high-performance MHP TFTs.
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Affiliation(s)
- Junghwan Kim
- Materials Research Center for Element StrategyTokyo Institute of Technology4259 NagatsutaYokohama226–8503Japan
| | - Yu‐Shien Shiah
- Materials Research Center for Element StrategyTokyo Institute of Technology4259 NagatsutaYokohama226–8503Japan
| | - Kihyung Sim
- Materials Research Center for Element StrategyTokyo Institute of Technology4259 NagatsutaYokohama226–8503Japan
| | - Soshi Iimura
- WPI‐MANANational Institute for Materials ScienceTsukuba305‐0044Japan
| | - Katsumi Abe
- Silvaco Japan Co., Ltd.Nakagyo‐kuKyoto604–8152Japan
| | - Masatake Tsuji
- Materials Research Center for Element StrategyTokyo Institute of Technology4259 NagatsutaYokohama226–8503Japan
| | - Masato Sasase
- Materials Research Center for Element StrategyTokyo Institute of Technology4259 NagatsutaYokohama226–8503Japan
| | - Hideo Hosono
- Materials Research Center for Element StrategyTokyo Institute of Technology4259 NagatsutaYokohama226–8503Japan
- WPI‐MANANational Institute for Materials ScienceTsukuba305‐0044Japan
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30
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Kripalani DR, Cai Y, Lou J, Zhou K. Strong Edge Stress in Molecularly Thin Organic-Inorganic Hybrid Ruddlesden-Popper Perovskites and Modulations of Their Edge Electronic Properties. ACS NANO 2022; 16:261-270. [PMID: 34978421 DOI: 10.1021/acsnano.1c06158] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Organic-inorganic hybrid Ruddlesden-Popper perovskites (HRPPs) have gained much attention for optoelectronic applications due to their high moisture resistance, good processability under ambient conditions, and long functional lifetimes. Recent success in isolating molecularly thin hybrid perovskite nanosheets and their intriguing edge phenomena have raised the need for understanding the role of edges and the properties that dictate their fundamental behaviors. In this work, we perform a prototypical study on the edge effects in ultrathin hybrid perovskites by considering monolayer (BA)2PbI4 as a representative system. On the basis of first-principles simulations of nanoribbon models, we show that in addition to significant distortions of the octahedra network at the edges, strong edge stresses are also present in the material. Structural instabilities that arise from the edge stress could drive the relaxation process and dominate the morphological response of edges in practice. A clear downward shift of the bands at the narrower ribbons, as indicative of the edge effect, facilitates the separation of photoexcited carriers (electrons move toward the edge and holes move toward the interior part of the nanosheet). Moreover, the desorption energy of the organic molecule can also be much lower at the free edges, making it easier for functionalization and/or substitution events to take place. The findings reported in this work elucidate the underlying mechanisms responsible for edge states in HRPPs and will be important in guiding the rational design and development of high-performance layer-edge devices.
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Affiliation(s)
- Devesh R Kripalani
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yongqing Cai
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau 999078, P. R. China
| | - Jun Lou
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Kun Zhou
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Environmental Process Modelling Centre, Nanyang Environment and Water Research Institute, Nanyang Technological University, 1 Cleantech Loop, Singapore 637141, Singapore
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31
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Chapman A, Ertekin E, Kubota M, Nagao A, Bertsch K, Macadre A, Tsuchiyama T, Masamura T, Takaki S, Komoda R, Dadfarnia M, Somerday B, Staykov AT, Sugimura J, Sawae Y, Morita T, Tanaka H, Yagi K, Niste V, Saravanan P, Onitsuka S, Yoon KS, Ogo S, Matsushima T, Tumen-Ulzii G, Klotz D, Nguyen DH, Harrington G, Adachi C, Matsumoto H, Kwati L, Takahashi Y, Kosem N, Ishihara T, Yamauchi M, Saha BB, Islam MA, Miyawaki J, Sivasankaran H, Kohno M, Fujikawa S, Selyanchyn R, Tsuji T, Higashi Y, Kirchheim R, Sofronis P. Achieving a Carbon Neutral Future through Advanced Functional Materials and Technologies. BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 2022. [DOI: 10.1246/bcsj.20210323] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Affiliation(s)
- Andrew Chapman
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Elif Ertekin
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Illinois, USA
| | - Masanobu Kubota
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Akihide Nagao
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Kaila Bertsch
- Lawrence Livermore National Laboratory, California, USA
| | - Arnaud Macadre
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Department of Mechanical Engineering, Yamaguchi University, Yamaguchi, Japan
| | - Toshihiro Tsuchiyama
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Department of Materials Science and Engineering, Kyushu University, Fukuoka, Japan
| | - Takuro Masamura
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Department of Materials Science and Engineering, Kyushu University, Fukuoka, Japan
| | - Setsuo Takaki
- Netsuren Co., Ltd., Hyogo, Japan
- Emeritus Professor, Kyushu University, Fukuoka, Japan
| | - Ryosuke Komoda
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Department of Mechanical Engineering, Fukuoka University, Fukuoka, Japan
| | - Mohsen Dadfarnia
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Department of Mechanical Engineering, Seattle University, Washington, USA
| | - Brian Somerday
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Illinois, USA
- Somerday Consulting LLC, Pennsylvania, USA
| | - Alexander Tsekov Staykov
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Joichi Sugimura
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Research Center for Hydrogen Industrial Use and Storage, Kyushu University, Fukuoka, Japan
- Department of Mechanical Engineering, Fukuoka University, Fukuoka, Japan
| | - Yoshinori Sawae
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Department of Mechanical Engineering, Fukuoka University, Fukuoka, Japan
| | - Takehiro Morita
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Department of Mechanical Engineering, Fukuoka University, Fukuoka, Japan
| | - Hiroyoshi Tanaka
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Research Center for Hydrogen Industrial Use and Storage, Kyushu University, Fukuoka, Japan
- Department of Mechanical Engineering, Fukuoka University, Fukuoka, Japan
| | - Kazuyuki Yagi
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Research Center for Hydrogen Industrial Use and Storage, Kyushu University, Fukuoka, Japan
- Department of Mechanical Engineering, Fukuoka University, Fukuoka, Japan
| | | | - Prabakaran Saravanan
- Department of Mechanical Engineering, Birla Institute of Technology & Science - Pilani, Hyderabad, Telangana, India
| | - Shugo Onitsuka
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Ki-Seok Yoon
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Seiji Ogo
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Toshinori Matsushima
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Ganbaatar Tumen-Ulzii
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Dino Klotz
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Dinh Hoa Nguyen
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - George Harrington
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Chihaya Adachi
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Hiroshige Matsumoto
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Leonard Kwati
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Yukina Takahashi
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Nuttavut Kosem
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Tatsumi Ishihara
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Miho Yamauchi
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Bidyut Baran Saha
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Md. Amirul Islam
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Jin Miyawaki
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Harish Sivasankaran
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Masamichi Kohno
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Shigenori Fujikawa
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Roman Selyanchyn
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Takeshi Tsuji
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Yukihiro Higashi
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
| | - Reiner Kirchheim
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Institute of Materials Physics, University of Gottingen, Germany
| | - Petros Sofronis
- International Institute for Carbon Neutral Energy Research (I2CNER), Kyushu University, Fukuoka, Japan
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Illinois, USA
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32
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Zhang P, Chen Y, Wu S, Li X, Liu M, Li S. Enhancing the performance of n-i-p perovskite solar cells by introducing hydroxyethylpiperazine ethane sulfonic acid for interfacial adjustment. NANOSCALE 2021; 14:35-41. [PMID: 34768278 DOI: 10.1039/d1nr05939d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Although the power conversion efficiency (PCE) of perovskite solar cells (PSCs) has improved greatly in recent years, the challenges of efficiency and stability still need to be overcome before these solar cells can be used in commercial applications. Here, a weak acid buffer, hydroxyethyl piperazine ethane sulfonic acid (HEPES), is used to passivate the interface of an SnO2 electron transport layer (ETL) and a photoactive layer in n-i-p solar cells. The device efficiency based on a SnO2/HEPES ETL reaches 20.22%, which is 9.7% higher than that of the control (18.43%), and the device stability is also significantly improved. The improvement in the device performance is mainly due to the introduction of the HEPES interface layer to adjust the interface energy level, which also improves the crystallinity of the perovskite film and reduces the interface defects. Electrochemical impedance spectroscopy and transient photovoltage/photocurrent results show that the HEPES-modified PSCs have lower charge transfer resistance, weaker leakage current intensity and improved interfacial charge separation and transport.
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Affiliation(s)
- Putao Zhang
- Key Laboratory of Photovoltaic Materials, Henan University, Henan, Kaifeng 475004, China.
| | - Yiming Chen
- Key Laboratory of Photovoltaic Materials, Henan University, Henan, Kaifeng 475004, China.
| | - Shenghan Wu
- Key Laboratory of Photovoltaic Materials, Henan University, Henan, Kaifeng 475004, China.
| | - Xiaohui Li
- Key Laboratory of Photovoltaic Materials, Henan University, Henan, Kaifeng 475004, China.
| | - Meiyue Liu
- Key Laboratory of Photovoltaic Materials, Henan University, Henan, Kaifeng 475004, China.
| | - Shengjun Li
- Key Laboratory of Photovoltaic Materials, Henan University, Henan, Kaifeng 475004, China.
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33
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Ham A, Kim TS, Kang M, Cho H, Kang K. Strategies for chemical vapor deposition of two-dimensional organic-inorganic halide perovskites. iScience 2021; 24:103486. [PMID: 34927028 PMCID: PMC8649807 DOI: 10.1016/j.isci.2021.103486] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/06/2021] [Revised: 10/06/2021] [Accepted: 11/19/2021] [Indexed: 11/08/2022] Open
Abstract
Two-dimensional (2D) organic-inorganic halide perovskites (OIHPs) with an alternating stacked structure of an organic layer and an inorganic layer draw significant attention for photovoltaics, multiple quantum-well, and passivation of three-dimensional perovskites. Although the low-cost and simple spin-coating process of these materials offers a vast platform to study fundamental properties and help them achieve rapid progress in electronics and optoelectronics, chemical vapor deposition (CVD) growth is also necessary for large-area, epitaxial, selective, and conformal growth. Here, one-step CVD strategies for 2D OIHP growth are proposed, and the growth trends depending on the precursor and substrate conditions are discussed. We report a CVD-grown nontoxic, lead-free 2D tin-OIHP flake to show the system offering a universal route to synthesize perovskite crystals based on arbitrary organic and inorganic components.
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Affiliation(s)
- Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Himchan Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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34
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Elshanawany MM, Ricciardulli AG, Saliba M, Wachtveitl J, Braun M. Mechanism of ultrafast energy transfer between the organic-inorganic layers in multiple-ring aromatic spacers for 2D perovskites. NANOSCALE 2021; 13:15668-15676. [PMID: 34523656 DOI: 10.1039/d1nr04290d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Lead halide based perovskite semiconductors self-assemble with distinct organic cations in natural multi-quantum-well structures. The emerging electronic properties of these two-dimensional (2D) materials can be controlled by the combination of the halide content and choice of chromophore in the organic layer. Understanding the photophysics of the perovskite semiconductor materials is critical for the optimization of stable and efficient optoelectronic devices. We use femtosecond transient absorption spectroscopy (fs-TAS) to study the mechanism of energy transfer between the organic and inorganic layers in a series of three lead-based mixed-halide perovskites such as benzylammonium (BA), 1-naphthylmethylammonium (NMA), and 1-pyrenemethylammonium (PMA) cations in 2D-lead-based perovskite thin films under similar experimental conditions. After optical excitation of the 2D-confined exciton in the lead halide layer, ultrafast energy transfer is observed to organic singlet and triplet states of the incorporated chromophores. This is explained by an effective Dexter energy transfer, which operates via a correlated electron exchange between the donating 2D-confined exciton and the accepting chromophore under spin conservation.
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Affiliation(s)
- Mahmoud M Elshanawany
- Institute of Physical and Theoretical Chemistry, Goethe University, Frankfurt am Main, Germany.
| | | | - Michael Saliba
- Institute of Photovoltaics (ipv), University of Stuttgart, Stuttgart, Germany
- Helmholtz Young Investigator Group FRONTRUNNER, Forschungszentrum Jülich, Jülich, Germany
| | - Josef Wachtveitl
- Institute of Physical and Theoretical Chemistry, Goethe University, Frankfurt am Main, Germany.
| | - Markus Braun
- Institute of Physical and Theoretical Chemistry, Goethe University, Frankfurt am Main, Germany.
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35
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Jeong B, Veith L, Smolders TJAM, Wolf MJ, Asadi K. Room-Temperature Halide Perovskite Field-Effect Transistors by Ion Transport Mitigation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2100486. [PMID: 34387400 DOI: 10.1002/adma.202100486] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2021] [Revised: 04/26/2021] [Indexed: 06/13/2023]
Abstract
Solution-processed halide perovskites have emerged as excellent optoelectronic materials for applications in photovoltaic solar cells and light-emitting diodes. However, the presence of mobile ions in the material hinders the development of perovskite field-effect transistors (FETs) due to screening of the gate potential in the nearby perovskite channel, and the resulting impediment to achieving gate modulation of an electronic current at room temperature. Here, room-temperature operation is demonstrated in cesium lead tribromide (CsPbBr3 ) perovskite-based FETs using an auxiliary ferroelectric gate of poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], to electrostatically fixate the mobile ions. The large interfacial polarization of the ferroelectric gate attracts the mobile ions away from the main nonferroelectric gate interface, thereby enabling modulation of the electronic current through the channel by the main gate. This strategy allows for realization of the p-type CsPbBr3 channel and revealing the thermally activated nature of the hole charge transport. The proposed strategy is generic and can be applied for regulating ions in a variety of ionic-electronic mixed semiconductors.
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Affiliation(s)
- Beomjin Jeong
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Lothar Veith
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | | | - Matthew J Wolf
- Department of Physics, University of Bath, Claverton Down, Bath, BA2 7AY, UK
| | - Kamal Asadi
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
- Department of Physics, University of Bath, Claverton Down, Bath, BA2 7AY, UK
- Centre for Therapeutic Innovation, University of Bath, Bath, BA2 7AY, UK
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36
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Liang A, Gao Y, Asadpour R, Wei Z, Finkenauer BP, Jin L, Yang J, Wang K, Chen K, Liao P, Zhu C, Huang L, Boudouris BW, Alam MA, Dou L. Ligand-Driven Grain Engineering of High Mobility Two-Dimensional Perovskite Thin-Film Transistors. J Am Chem Soc 2021; 143:15215-15223. [PMID: 34516736 DOI: 10.1021/jacs.1c06337] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
Controlling grain growth is of great importance in maximizing the charge carrier transport for polycrystalline thin-film electronic devices. The thin-film growth of halide perovskite materials has been manipulated via a number of approaches including solvent engineering, composition engineering, and post-treatment processes. However, none of these methods lead to large-scale atomically flat thin films with extremely large grain size and high charge carrier mobility. Here, we demonstrate a novel π-conjugated ligand design approach for controlling the thin-film nucleation and growth kinetics in two-dimensional (2D) halide perovskites. By extending the π-conjugation and increasing the planarity of the semiconducting ligand, nucleation density can be decreased by more than 5 orders of magnitude. As a result, wafer-scale 2D perovskite thin films with highly ordered crystalline structures and extremely large grain size are readily obtained. We demonstrate high-performance field-effect transistors with hole mobility approaching 10 cm2 V-1 s-1 with ON/OFF current ratios of ∼106 and excellent stability and reproducibility. Our modeling analysis further confirms the origin of enhanced charge transport and field and temperature dependence of the observed mobility, which allows for clear deciphering of the structure-property relationships in these nascent 2D semiconductor systems.
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Affiliation(s)
- Aihui Liang
- College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China.,Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yao Gao
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Reza Asadpour
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zitang Wei
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Blake P Finkenauer
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Linrui Jin
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jiaqi Yang
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Kang Wang
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Ke Chen
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Peilin Liao
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Chenhui Zhu
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Libai Huang
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Bryan W Boudouris
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States.,Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
| | - Muhammad Ashraf Alam
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Letian Dou
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States.,Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
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37
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Huang X, Li Q, Shi W, Liu K, Zhang Y, Liu Y, Wei X, Zhao Z, Guo Y, Liu Y. Dual-Mode Learning of Ambipolar Synaptic Phototransistor Based on 2D Perovskite/Organic Heterojunction for Flexible Color Recognizable Visual System. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102820. [PMID: 34319659 DOI: 10.1002/smll.202102820] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2021] [Indexed: 06/13/2023]
Abstract
Artificial intelligence vision systems (AIVSs) with information sensing, processing, and storage functions are increasingly gaining attention in the science and technology community. Although synapse phototransistor (SPT) is one of the essential components in AIVSs, solution-processed large-area photonic synapses that can detect and recognize multi-wavelength light are highly desirable. One of the major challenges in this area is the inability of the available materials to distinguish colors from the visible light to the near-infrared (NIR) light for single carrier (hole-only or electron-only) SPTs owing to lack of cognitive elements. Herein, 2D perovskite/organic heterojunction (PEA2 SnI4 /Y6) ambipolar SPTs (POASPTs) are developed via solution process. The POASPTs can display dual-mode learning process, which can convert light signals into postsynaptic currents with excitement/inhibition modes (hole-transporting region) or inhibition/excitement (electron-transporting region). The POASPTs exhibit high responsivity to visible light (104 A W-1 ) and NIR light (200 A W-1 ), and effectively perform learning and memory simultaneously. The flexible POASPT arrays can successfully recognize the images of different colors of light. This study reveals that the fabricated POASPTs have great potentials in the development of large-area, high-efficiency, and low-cost AIVSs.
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Affiliation(s)
- Xin Huang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Qingyuan Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Wei Shi
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Kai Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yunpeng Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanwei Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xiaofang Wei
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Zhiyuan Zhao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
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38
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Zhang Y, Ma Y, Wang Y, Zhang X, Zuo C, Shen L, Ding L. Lead-Free Perovskite Photodetectors: Progress, Challenges, and Opportunities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006691. [PMID: 34028107 DOI: 10.1002/adma.202006691] [Citation(s) in RCA: 51] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2020] [Revised: 01/04/2021] [Indexed: 05/24/2023]
Abstract
State-of-the-art photodetectors which apply hybrid perovskite materials have emerged as powerful candidates for next-generation light sensing. Among them, lead-based ones are the most popular beyond doubt on account of their unique and superior optoelectronic properties. Nevertheless, trade-off toward commercialization exists between nontoxicity and high performance, with the poor stability of lead-based perovskites, indicating that it is indispensable to substitute lead with nontoxic element meanwhile bringing about a comparable figure of merit of photodetectors and relatively long-term stability. Herein, recent advances in lead-free perovskite photodetectors are reviewed, analyzing the principle while designing new materials and highlighting some remarkable progress, which are comparable, even superior, to lead-based photodetectors. Furthermore, their potential strategy in optical communication, image sensing, narrowband photodetection, etc., is examined and a perspective on developing new materials and photodetectors with superior properties for more practical applications is provided.
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Affiliation(s)
- Yiqi Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yao Ma
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yaxi Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xindong Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Chuantian Zuo
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, China
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39
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Wang Q, Wee ATS. Upconversion Photovoltaic Effect of WS 2/2D Perovskite Heterostructures by Two-Photon Absorption. ACS NANO 2021; 15:10437-10443. [PMID: 34009945 DOI: 10.1021/acsnano.1c02782] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Photovoltaic devices work by converting sunlight energy into electric energy. The efficiency of current photovoltaic devices, however, is significantly limited by the transmission loss of photons with energies below the bandgap of channel semiconductors, which can be circumvented by photon energy upconversion. Energy upconversion has been widely employed to improve the efficiency of traditional solar cells. However, the employment of energy upconversion in two-dimensional (2D) heterostructure photovoltaic devices has not been investigated yet. Here, we report the upconversion photovoltaic effect of WS2 monolayer/(C6H5C2H4NH3)2PbI4 (PEPI) 2D perovskite heterostructures by below-bandgap two-photon absorption via a virtual intermediate state. An open circuit voltage of 0.37 V and short circuit current of 7.4 pA are obtained with a photoresponsivity of 771 pA/W and current on/off ratio of 130:1. This work demonstrates that upconversion by two-photon absorption may potentially be a strategy for boosting the efficiency of 2D material-based photovoltaic devices by virtue of the absorption of photons below the bandgap energy of channel semiconductors.
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Affiliation(s)
- Qixing Wang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Block S14, 6 Science Drive 2, Singapore 117546, Singapore
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40
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Younis A, Lin CH, Guan X, Shahrokhi S, Huang CY, Wang Y, He T, Singh S, Hu L, Retamal JRD, He JH, Wu T. Halide Perovskites: A New Era of Solution-Processed Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005000. [PMID: 33938612 DOI: 10.1002/adma.202005000] [Citation(s) in RCA: 48] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2020] [Revised: 10/29/2020] [Indexed: 05/26/2023]
Abstract
Organic-inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light-emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up-to-date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite-based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite-based electronics as a competitive and feasible technology are highlighted.
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Affiliation(s)
- Adnan Younis
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
- Department of Physics, College of Science, University of Bahrain, P.O. Box 32038, Sakhir Campus, Zallaq, Kingdom of Bahrain
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Shamim Shahrokhi
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Yutao Wang
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Tengyue He
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Simrjit Singh
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Jose Ramon Duran Retamal
- Computer, Electrical and Mathematical Sciences and Engineering, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, China
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
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41
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Zhang F, Zhang Q, Liu X, Hu Y, Lou Z, Hou Y, Teng F. Property Modulation of Two-Dimensional Lead-Free Perovskite Thin Films by Aromatic Polymer Additives for Performance Enhancement of Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:24272-24284. [PMID: 33983724 DOI: 10.1021/acsami.1c03041] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The inevitable oxidation of Sn2+ and p-type self-doping has plagued the development of two-dimensional (2D) Sn-based perovskite field effect transistors. In this work, we demonstrate the modulation of the properties of phenethylammonium tin iodide ((PEA)2SnI4) perovskite thin films by introducing the aromatic polymer additives of poly(4-vinylphenol) (PVP) and poly(vinyl pyrrolidone) (PVPD) during the crystallization processes, keeping the 2D layered structure of (PEA)2SnI4 unchanged. The proposed formation mechanisms of the polymer-assisted (PEA)2SnI4:PVP and (PEA)2SnI4:PVPD films disclose that the interactions between the polymers and (PEA)2SnI4, such as hydrogen bonds, π-π interactions, and coordination bonds, lead to the improvement of the morphology and crystallization as well as the inhibition of Sn2+ oxidation of the films. However, the field-effect transistors based on the two polymer-assisted (PEA)2SnI4 thin films constructed on the dielectric of poly(vinyl alcohol) (PVA) modified by crosslinking PVP (CL-PVP) exhibit quite a different performance. Compared with the (PEA)2SnI4 transistor, without sacrificing the hole mobility, the on-off current ratio of the (PEA)2SnI4:PVP device increases by one order of magnitude, and the subthreshold slope declines slightly due to the reduced leakage current, which results from the reduction of p-type self-doping of the perovskite film and the improved quality of the perovskite/dielectric interface because of the strong π-π interactions between the benzene rings in CL-PVP and (PEA)2SnI4:PVP. In contrast, the (PEA)2SnI4:PVPD transistor exhibits relatively poor overall performance because of the N-vinylpyrrolidone of PVPD. More importantly, employing PVP and PVPD as additives can effectively enhance the chemical stability of (PEA)2SnI4 as well as the operational stabilities of the corresponding transistors. Our work provides an effective strategy for selecting chemical additives to improve 2D perovskite properties and suppress the oxidation of Sn-based perovskites, and paves a way toward the future applications of Sn-based perovskite optoelectronic devices with high performance and stability.
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Affiliation(s)
- Fan Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Quan Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Xin Liu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Yufeng Hu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Zhidong Lou
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Yanbing Hou
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
| | - Feng Teng
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
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42
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Kim J, Lee W, Cho K, Ahn H, Lee J, Baek KY, Kim JK, Kang K, Lee T. Crystallinity-dependent device characteristics of polycrystalline 2D n = 4 Ruddlesden-Popper perovskite photodetectors. NANOTECHNOLOGY 2021; 32:185203. [PMID: 33498023 DOI: 10.1088/1361-6528/abe003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Ruddlesden-Popper (RP) perovskites have attracted a lot of attention as the active layer for optoelectronic devices due to their excellent photophysical properties and environmental stability. Especially, local structural properties of RP perovskites have shown to play important roles in determining the performance of optoelectronic devices. Here, we report the photodetector performance variation depending on the crystallinity of n = 4 two-dimensional (2D) RP perovskite polycrystalline films. Through controlling the solvent evaporation rate, 2D RP perovskite films could be tuned between highly- and randomly-orientated phases. We investigated how different factors related to the film crystallinity are reflected in the variation of photodetector performances by considering grain boundary and low energy edge state effects in n = 4 RP perovskites. Better understanding the interplay between these factors that govern the photophysical properties of the devices would be beneficial for designing high-performance RP perovskite-based optoelectronic devices.
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Affiliation(s)
- Junwoo Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Woocheol Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Kyungjune Cho
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Heebeom Ahn
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Jonghoon Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Kyeong-Yoon Baek
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Jae-Keun Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Keehoon Kang
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Takhee Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
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43
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Affiliation(s)
- Wensi Cai
- Key Laboratory of Optoelectronic Technology & Systems (MoE), Chongqing University, Chongqing 400044, China
| | - Huaxin Wang
- Key Laboratory of Optoelectronic Technology & Systems (MoE), Chongqing University, Chongqing 400044, China
| | - Zhigang Zang
- Key Laboratory of Optoelectronic Technology & Systems (MoE), Chongqing University, Chongqing 400044, China.
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China.
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44
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Huang YT, Kavanagh SR, Scanlon DO, Walsh A, Hoye RLZ. Perovskite-inspired materials for photovoltaics and beyond-from design to devices. NANOTECHNOLOGY 2021; 32:132004. [PMID: 33260167 DOI: 10.1088/1361-6528/abcf6d] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Lead-halide perovskites have demonstrated astonishing increases in power conversion efficiency in photovoltaics over the last decade. The most efficient perovskite devices now outperform industry-standard multi-crystalline silicon solar cells, despite the fact that perovskites are typically grown at low temperature using simple solution-based methods. However, the toxicity of lead and its ready solubility in water are concerns for widespread implementation. These challenges, alongside the many successes of the perovskites, have motivated significant efforts across multiple disciplines to find lead-free and stable alternatives which could mimic the ability of the perovskites to achieve high performance with low temperature, facile fabrication methods. This Review discusses the computational and experimental approaches that have been taken to discover lead-free perovskite-inspired materials, and the recent successes and challenges in synthesizing these compounds. The atomistic origins of the extraordinary performance exhibited by lead-halide perovskites in photovoltaic devices is discussed, alongside the key challenges in engineering such high-performance in alternative, next-generation materials. Beyond photovoltaics, this Review discusses the impact perovskite-inspired materials have had in spurring efforts to apply new materials in other optoelectronic applications, namely light-emitting diodes, photocatalysts, radiation detectors, thin film transistors and memristors. Finally, the prospects and key challenges faced by the field in advancing the development of perovskite-inspired materials towards realization in commercial devices is discussed.
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Affiliation(s)
- Yi-Teng Huang
- Department of Physics, University of Cambridge, JJ Thomson Ave, Cambridge CB3 0HE, United Kingdom
| | - Seán R Kavanagh
- Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom
- Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom
- Thomas Young Centre, University College London, Gower Street, London WC1E 6BT, United Kingdom
| | - David O Scanlon
- Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom
- Thomas Young Centre, University College London, Gower Street, London WC1E 6BT, United Kingdom
- Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, United Kingdom
| | - Aron Walsh
- Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom
- Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea
| | - Robert L Z Hoye
- Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom
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45
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Liang A, Wang K, Gao Y, Finkenauer BP, Zhu C, Jin L, Huang L, Dou L. Highly Efficient Halide Perovskite Light‐Emitting Diodes via Molecular Passivation. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202100243] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Affiliation(s)
- Aihui Liang
- College of Chemistry and Chemical Engineering Jiangxi Normal University Nanchang 330022 P. R. China
- Davidson School of Chemical Engineering Purdue University West Lafayette IN 47907 USA
| | - Kang Wang
- Davidson School of Chemical Engineering Purdue University West Lafayette IN 47907 USA
| | - Yao Gao
- Davidson School of Chemical Engineering Purdue University West Lafayette IN 47907 USA
| | - Blake P. Finkenauer
- Davidson School of Chemical Engineering Purdue University West Lafayette IN 47907 USA
| | - Chenhui Zhu
- Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
| | - Linrui Jin
- Department of Chemistry Purdue University West Lafayette IN 47907 USA
| | - Libai Huang
- Department of Chemistry Purdue University West Lafayette IN 47907 USA
| | - Letian Dou
- Davidson School of Chemical Engineering Purdue University West Lafayette IN 47907 USA
- Birck Nanotechnology Center Purdue University West Lafayette IN USA
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46
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Liang A, Wang K, Gao Y, Finkenauer BP, Zhu C, Jin L, Huang L, Dou L. Highly Efficient Halide Perovskite Light‐Emitting Diodes via Molecular Passivation. Angew Chem Int Ed Engl 2021; 60:8337-8343. [PMID: 33497510 DOI: 10.1002/anie.202100243] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/06/2021] [Indexed: 11/10/2022]
Affiliation(s)
- Aihui Liang
- College of Chemistry and Chemical Engineering Jiangxi Normal University Nanchang 330022 P. R. China
- Davidson School of Chemical Engineering Purdue University West Lafayette IN 47907 USA
| | - Kang Wang
- Davidson School of Chemical Engineering Purdue University West Lafayette IN 47907 USA
| | - Yao Gao
- Davidson School of Chemical Engineering Purdue University West Lafayette IN 47907 USA
| | - Blake P. Finkenauer
- Davidson School of Chemical Engineering Purdue University West Lafayette IN 47907 USA
| | - Chenhui Zhu
- Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
| | - Linrui Jin
- Department of Chemistry Purdue University West Lafayette IN 47907 USA
| | - Libai Huang
- Department of Chemistry Purdue University West Lafayette IN 47907 USA
| | - Letian Dou
- Davidson School of Chemical Engineering Purdue University West Lafayette IN 47907 USA
- Birck Nanotechnology Center Purdue University West Lafayette IN USA
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47
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Liu F, Zhang Y, Wang J, Chen Y, Wang L, Wang G, Dong J, Jiang C. MoS 2/pentacene hybrid complementary inverter based photodetector with amplified voltage-output. NANOTECHNOLOGY 2021; 32:015203. [PMID: 32947272 DOI: 10.1088/1361-6528/abb9da] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A sensitive photodetection based on a novel hybrid CMOS inverter has been demonstrated. Unlike common photo-current type photodetectors, which convert optical signals to current, the CMOS inverter realizes voltage-output, overcoming the difficulty to monitor current signal in the range of nA. The hybrid CMOS logic inverter employs n-channel MoS2 nanosheet/perovskite heterojunction FET and p-channel organic pentacene FET in a planar architecture. In order to obtain high performance, we adopt the interdigital electrodes for the pentacene FET to enhance the current density of the p-channel, and stack perovskite on the MoS2 channel to modify the threshold voltage of the n-channel. As a result, a CMOS inverter with a voltage gain of more than ten is obtained. When VIN is around the transition voltage (-38 V), the inverter can obtain stable optical detection signal, the VOUT changes from 6 V in dark to 1 V under 633 nm light exposure. This finding indicates the potential to fabricate visible light detecting devices with voltage-output based on the inverter and may be further applicable for a photo-logic circuit.
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Affiliation(s)
- Fengjing Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yiwei Zhang
- Faculty of Science, School of Physics and Optoelectronics, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - Jiawei Wang
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Yiyi Chen
- School of Physics and Electronics, Shandong Normal University, Jinan 250358, People's Republic of China
| | - Liang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Gongtang Wang
- School of Physics and Electronics, Shandong Normal University, Jinan 250358, People's Republic of China
| | - Ji Dong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Chao Jiang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
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48
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Blancon JC, Even J, Stoumpos CC, Kanatzidis MG, Mohite AD. Semiconductor physics of organic-inorganic 2D halide perovskites. NATURE NANOTECHNOLOGY 2020; 15:969-985. [PMID: 33277622 DOI: 10.1038/s41565-020-00811-1] [Citation(s) in RCA: 126] [Impact Index Per Article: 31.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2020] [Accepted: 10/30/2020] [Indexed: 05/02/2023]
Abstract
Achieving technologically relevant performance and stability for optoelectronics, energy conversion, photonics, spintronics and quantum devices requires creating atomically precise materials with tailored homo- and hetero-interfaces, which can form functional hierarchical assemblies. Nature employs tunable sequence chemistry to create complex architectures, which efficiently transform matter and energy, however, in contrast, the design of synthetic materials and their integration remains a long-standing challenge. Organic-inorganic two-dimensional halide perovskites (2DPKs) are organic and inorganic two-dimensional layers, which self-assemble in solution to form highly ordered periodic stacks. They exhibit a large compositional and structural phase space, which has led to novel and exciting physical properties. In this Review, we discuss the current understanding in the structure and physical properties of 2DPKs from the monolayers to assemblies, and present a comprehensive comparison with conventional semiconductors, thereby providing a broad understanding of low-dimensional semiconductors that feature complex organic-inorganic hetero-interfaces.
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Affiliation(s)
| | - Jacky Even
- Univ Rennes, INSA Rennes, CNRS, Institut FOTON - UMR 6082, Rennes, France
| | - Costas C Stoumpos
- Department of Materials Science and Technology, University of Crete, Heraklion, Crete, Greece
| | - Mercouri G Kanatzidis
- Department of Chemistry and Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Aditya D Mohite
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, TX, USA.
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49
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Jana S, Carlos E, Panigrahi S, Martins R, Fortunato E. Toward Stable Solution-Processed High-Mobility p -Type Thin Film Transistors Based on Halide Perovskites. ACS NANO 2020; 14:14790-14797. [PMID: 33078942 DOI: 10.1021/acsnano.0c02862] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Organolead halide perovskites have drawn significant attention from the scientific community as one of the most attractive materials in optoelectronics, especially in the field of photovoltaics. In this study, we focus on using halide perovskites in processing thin film transistors (TFTs). Halide perovskites have high solution processability and excellent carrier transport characteristics, in particular for holes. The present work aims to fill a gap in oxide-based technology. It concerns the process of using high-stable and reliable p-type oxide-based devices to target CMOS technology (complementary metal-oxide-semiconductor). We report on a solution-processed high-performance TFT based on methylammonium lead iodide (CH3NH3PbI3) perovskite semiconductor films, which shows promise for devices that can be simple to manufacture with high reliability, reproducibility, and excellent stability in atmospheric conditions. To achieve a highly stable perovskite semiconductor film, we introduce diethylsulfide in the perovskite precursor. The TFT shows a stable p-type behavior when operated at low voltages (≤-2 V) and has a current modulation of >104, an almost negligible hysteresis, and average saturation mobility of about 18.8 cm2 V-1 s-1, taken over 50 devices tested (the highest one measured was ∼23.2 cm2 V-1 s-1). This is the highest value until now reported in the literature. In addition, we demonstrate that perovskite TFTs can be fabricated at temperatures as low as 150 °C on flexible substrates with a saturation mobility of ∼11.5 cm2 V-1 s-1. The high-performance perovskite TFT with excellent stability is a promising candidate for the next generation of p-type transistors for a plethora of low-cost electronics applications.
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Affiliation(s)
- Santanu Jana
- CENIMAT/i3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia-Universidade Nova de Lisboa and CEMOP/Uninova, Campus de Caparica, 2829-516 Caparica, Portugal
| | - Emanuel Carlos
- CENIMAT/i3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia-Universidade Nova de Lisboa and CEMOP/Uninova, Campus de Caparica, 2829-516 Caparica, Portugal
| | - Shrabani Panigrahi
- CENIMAT/i3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia-Universidade Nova de Lisboa and CEMOP/Uninova, Campus de Caparica, 2829-516 Caparica, Portugal
| | - Rodrigo Martins
- CENIMAT/i3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia-Universidade Nova de Lisboa and CEMOP/Uninova, Campus de Caparica, 2829-516 Caparica, Portugal
| | - Elvira Fortunato
- CENIMAT/i3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia-Universidade Nova de Lisboa and CEMOP/Uninova, Campus de Caparica, 2829-516 Caparica, Portugal
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50
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Qiu X, Liu Y, Li W, Hu Y. Traps in metal halide perovskites: characterization and passivation. NANOSCALE 2020; 12:22425-22451. [PMID: 33151219 DOI: 10.1039/d0nr05739h] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Metal halide perovskites (MHPs) have become a research focus in the field of optoelectronics due to their excellent optoelectronic properties and simple and cost-effective thin film manufacturing processes. In particular, the power conversion efficiency (PCE) of solar cells (SCs) and external quantum efficiency (EQE) of light-emitting diodes (LEDs) based on perovskite materials have reached 25.2% and 21.6%, respectively, in a short period, making perovskites especially promising for fabricating next-generation optoelectronic devices. Despite these inspiring results, obtaining high-performance, high-stability MHP-based devices still faces many challenges, among which the defects and the consequent traps in MHPs are key factors. Defect-induced traps can trap charge carriers or even act as non-radiative recombination centers, seriously degrading the device performance, causing hysteresis and deteriorating the stability of MHP-based devices. Thus, understanding the chemical/physical nature of traps and adopting appropriate strategies to passivate traps are important to enhance the device performance and stability. Herein we present a review in which the knowledge and understanding of traps in MHPs are considered and discussed. Moreover, the latest efforts on passivating traps in MHPs for improving device performance are summarized, with the hope of providing guidance to future development of high-performance and high-stability MHP-based devices.
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Affiliation(s)
- Xincan Qiu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China.
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