Monolayer Vanadium-Doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor

A substitutional quantum defect in WS2 discovered by high-throughput computational screening and fabricated by site-selective STM manipulation

Point defects in two-dimensional materials are of key interest for quantum information science. However, the parameter space of possible defects is immense, making the identification of high-performance quantum defects very challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS2, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (CoS 0 ) and fabricate it with scanning tunneling microscopy (STM). The CoS 0 electronic structure measured by STM agrees with first principles and showcases an attractive quantum defect. Our work shows how HT computational screening and nanoscale synthesis routes can be combined to design promising quantum defects.

Enhanced magnetic anisotropy of iridium dimers on antisite defects of two-dimensional transition-metal dichalcogenides

The combination of transition-metal (TM) elements with two-dimensional (2D) transition-metal dichalcogenides (TMDs) provides an effective route to realizing a 2D controllable magnetic order, leading to significant applications in multifunctional nanospintronics. However, in most TM atoms@TMDs nanostructures, it is challenging for the magnetic anisotropy energy (MAE) to exceed 30 meV when affected by the crystal field. Hence, the stronger magnetic anisotropy of TMDs has yet to be developed. Here, utilizing first-principle calculations based on density functional theory (DFT), a feasible method to enhance the MAEs of TMDs via configurating iridium dimers (Ir2) on 2D traditional and Janus TMDs with antisite defects is reported. Calculations revealed that 28 of the 54 configurations considered possessed structure-dependent MAEs of >60 meV per Ir2 in the out-of-plane direction, suggesting the potential for applications at room temperature. We also showed the ability to tune the MAE further massively by applying a biaxial strain as well as the surface asymmetric polarization reversal of Janus-type substrates. This approach led to changes to >80 meV per Ir2. This work provides a novel strategy to achieve tunable large magnetic anisotropy in 2D TMDs. It also extends the functionality of antisite-defective TMDs, thereby providing theoretical support for the development of magnetic nanodevices.

CO2 Stress-Driven Room Temperature Ferromagnetism of Ultrathin 2D Gallium Oxide

Spintronic devices work by manipulating the spin of electrons other than charge transfer, which is of revolutionary significance and can largely reduce energy consumption in the future. Herein, ultrathin two-dimensional (2D) non-van der Waals (non-vdW) γ-Ga2O3 with room temperature ferromagnetism is successfully obtained by using supercritical CO2 (SC CO2). The stress effect of SC CO2 under different pressures selectively modulates the orientation and strength of covalent bonds, leading to the change of atomic structure including lattice expansion, introduction of O vacancy, and transition of Ga-O coordination (GaO4 and GaO6). Magnetic measurements show that pristine γ-Ga2O3 is nonferromagnetic, whereas the SC CO2 treated γ-Ga2O3 exhibits obvious ferromagnetic behavior with an optimal magnetization of 0.025 emu g-1 and a Curie temperature of 300 K.

Highly Robust Room-Temperature Interfacial Ferromagnetism in Ultrathin Co2Si Nanoplates

The reduced dimensionality and interfacial effects in magnetic nanostructures open the feasibility to tailor magnetic ordering. Here, we report the synthesis of ultrathin metallic Co2Si nanoplates with a total thickness that is tunable to 2.2 nm. The interfacial magnetism coupled with the highly anisotropic nanoplate geometry leads to strong perpendicular magnetic anisotropy and robust hard ferromagnetism at room temperature, with a Curie temperature (TC) exceeding 950 K and a coercive field (HC) > 4.0 T at 3 K and 8750 Oe at 300 K. Theoretical calculations suggest that ferromagnetism originates from symmetry breaking and undercoordinated Co atoms at the Co2Si and SiO2 interface. With protection by the self-limiting intrinsic oxide, the interfacial ferromagnetism of the Co2Si nanoplates exhibits excellent environmental stability. The controllable growth of ambient stable Co2Si nanoplates as 2D hard ferromagnets could open exciting opportunities for fundamental studies and applications in Si-based spintronic devices.

Magnetic doping in transition metal dichalcogenides

Transition metal dichalcogenides (TMDCs) are materials with unique electronic properties due to their two-dimensional nature. Recently, there is a large and growing interest in synthesizing ferromagnetic TMDCs for applications in electronic devices and spintronics. Apart from intrinsically magnetic examples, modification via either intrinsic defects or external dopants may induce ferromagnetism in non-magnetic TMDCs and, hence expand the application of these materials. Here, we review recent experimental work on intrinsically non-magnetic TMDCs that present ferromagnetism as a consequence of either intrinsic defects or doping via self-flux approach, ion implantation or e-beam evaporation. The experimental work discussed here is organized by modification/doping mechanism. We also review current work on density functional theory calculations that predict ferromagnetism in doped systems, which also serve as preliminary data for the choice of new doped TMDCs to be explored experimentally. Implementing a controlled process to induce magnetism in two-dimensional materials is key for technological development and this topical review discusses the fundamental procedures while presenting promising materials to be investigated in order to achieve this goal.

Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature

The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.

Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn-, V-, and Fe-Doped WSe2

Using Hubbard-U-corrected density functional theory calculations, lattice Monte Carlo simulations, and spin Monte Carlo simulations, we investigate the impact of dopant clustering on the magnetic properties of WSe2 doped with period four transition metals. We use manganese (Mn) and iron (Fe) as candidate n-type dopants and vanadium (V) as the candidate p-type dopant, substituting the tungsten (W) atom in WSe2. Specifically, we determine the strength of the exchange interaction in Fe-, Mn-, and V-doped WSe2 in the presence of clustering. We show that the clusters of dopants are energetically more stable than discretely doped systems. Further, we show that in the presence of dopant clustering, the magnetic exchange interaction significantly reduces because the magnetic order in clustered WSe2 becomes more itinerant. Finally, we show that the clustering of the dopant atoms has a detrimental effect on the magnetic interaction, and to obtain an optimal Curie temperature, it is important to control the distribution of the dopant atoms.

Engineering the Electrical and Optical Properties of WS2 Monolayers via Defect Control

Two-dimensional (2D) materials as tungsten disulphide (WS2 ) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric-transport and optical properties. However, the presence of defects in the as grown samples represents one of the main limiting factors for commercial applications. At the same time, WS2 properties are frequently tailored by introducing impurities at specific sites. Aim of this review paper is to present a complete description and discussion of the effects of both intentional and unintentional defects in WS2 , by an in depth analysis of the recent experimental and theoretical investigations reported in the literature. First, the most frequent intrinsic defects in WS2 are presented and their effects in the readily synthetized material are discussed. Possible solutions to remove and heal unintentional defects are also analyzed. Following, different doping schemes are reported, including the traditional substitution approach and innovative techniques based on the surface charge transfer with adsorbed atoms or molecules. The plethora of WS2 monolayer modifications presented in this review and the systematic analysis of the corresponding optical and electronic properties, represent strategic degrees of freedom the researchers may exploit to tailor WS2 optical and electronic properties for specific device applications.

Engineering Vacancies for the Creation of Antisite Defects in Chemical Vapor Deposition Grown Monolayer MoS2 and WS2 via Proton Irradiation

It is critical to understand the laws of quantum mechanics in transformative technologies for computation and quantum information science applications to enable the ongoing second quantum revolution calls. Recently, spin qubits based on point defects have gained great attention, since these qubits can be initiated, selectively controlled, and read out with high precision at ambient temperature. The major challenge in these systems is controllably generating multiqubit systems while properly coupling the defects. To address this issue, we began by tackling the engineering challenges these systems present and understanding the fundamentals of defects. In this regard, we controllably generate defects in MoS2 and WS2 monolayers and tune their physicochemical properties via proton irradiation. We quantitatively discovered that the proton energy could modulate the defects' density and nature; higher defect densities were seen with lower proton irradiation energies. Three distinct defect types were observed: vacancies, antisites, and adatoms. In particular, the creation and manipulation of antisite defects provides an alternative way to create and pattern spin qubits based on point defects. Our results demonstrate that altering the particle irradiation energy can regulate the formation of defects, which can be utilized to modify the properties of 2D materials and create reliable electronic devices.

Realization of Robust and Ambient-Stable Room-Temperature Ferromagnetism in Wide Bandgap Semiconductor 2D Carbon Nitride Sheets

Due to their weak intrinsic spin-orbit coupling and a distinct bandgap of 3.06 eV, 2D carbon nitride (CN) flakes are promising materials for next-generation spintronic devices. However, achieving strong room-temperature (RT) and ambient-stable ferromagnetism (FM) remains a huge challenge. Here, we demonstrate that the strong RT FM with a high Curie temperature (TC) up to ∼400 K and saturation magnetization (Ms) of 2.91 emu/g can be achieved. Besides, the RT FM exhibits excellent air stability, with Ms remaining stable for over 6 months. Through the magneto-optic Kerr effect, Hall device, X-ray magnetic circular dichroism, and magnetic force microscopy measurements, we acquired clear evidence of magnetic behavior and magnetic domain evolutions at room temperature. Electrical and optical measurements confirm that the Co-doped CN retains its semiconductor properties. Detailed structural characterizations confirm that the single-atom Co coordination and nitrogen defects as well as C-C covalent bonds are simultaneously introduced into CN. Density functional theory calculations reveal that introducing C-C bonds causes carrier spin polarization, and spin-polarized carrier-mediated magnetic exchange between adjacent Co atoms leads to long-range magnetic ordering in CN. We believe that our findings provide a strong experimental foundation for the enormous potential of 2D wide bandgap semiconductor spintronic devices.

High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping

Because of the lack of contact and spacer doping techniques for two-dimensional (2D) transistors, most high-performance 2D devices have been produced with nontypical structures that contain electrical gating in the contact regions. In the present study, we used chloroauric acid (HAuCl4) as a strong p-dopant for WSe2 monolayers used in transistors. The HAuCl4-doped devices exhibited a record-low contact resistance of 0.7 kΩ·μm under a doping concentration of 1.76 × 1013 cm-2. In addition, an extrinsic carrier diffusion phenomenon was discovered in the HAuCl4-WSe2 system. With a suitably designed spacer length for doping, a normally off, high-performance underlap top-gate device can be produced without the application of additional gating in the contact and spacer regions.

Spin-Stabilization by Coulomb Blockade in a Vanadium Dimer in WSe2

Charged dopants in 2D transition metal dichalcogenides (TMDs) have been associated with the formation of hydrogenic bound states, defect-bound trions, and gate-controlled magnetism. Charge-transfer at the TMD-substrate interface and the proximity to other charged defects can be used to regulate the occupation of the dopant's energy levels. In this study, we examine vanadium-doped WSe2 monolayers on quasi-freestanding epitaxial graphene, by high-resolution scanning probe microscopy and ab initio calculations. Vanadium atoms substitute W atoms and adopt a negative charge state through charge donation from the graphene substrate. VW-1 dopants exhibit a series of occupied p-type defect states, accompanied by an intriguing electronic fine-structure that we attribute to hydrogenic states bound to the charged impurity. We systematically studied the hybridization in V dimers with different separations. For large dimer separations, the 2e- charge state prevails, and the magnetic moment is quenched. However, the Coulomb blockade in the nearest-neighbor dimer configuration stabilizes a 1e- charge state. The nearest-neighbor V-dimer exhibits an open-shell character for the frontier defect orbital, giving rise to a paramagnetic ground state. Our findings provide microscopic insights into the charge stabilization and many-body effects of single dopants and dopant pairs in a TMD host material.

Charge Transfer Modulation in Vanadium-Doped WS2 /Bi2 O2 Se Heterostructures

The field of photovoltaics is revolutionized in recent years by the development of two-dimensional (2D) type-II heterostructures. These heterostructures are made up of two different materials with different electronic properties, which allows for the capture of a broader spectrum of solar energy than traditional photovoltaic devices. In this study, the potential of vanadium (V)-doped WS2 is investigated, hereafter labeled V-WS2 , in combination with air-stable Bi2 O2 Se for use in high-performance photovoltaic devices. Various techniques are used to confirm the charge transfer of these heterostructures, including photoluminescence (PL) and Raman spectroscopy, along with Kelvin probe force microscopy (KPFM). The results show that the PL is quenched by 40%, 95%, and 97% for WS2 /Bi2 O2 Se, 0.4 at.% V-WS2 /Bi2 O2 Se, and 2 at.% V-WS2 /Bi2 O2 Se, respectively, indicating a superior charge transfer in V-WS2 /Bi2 O2 Se compared to pristine WS2 /Bi2 O2 Se. The exciton binding energies for WS2 /Bi2 O2 Se, 0.4 at.% V-WS2 /Bi2 O2 Se and 2 at.% V-WS2 /Bi2 O2 Se heterostructures are estimated to be ≈130, 100, and 80 meV, respectively, which is much lower than that for monolayer WS2 . These findings confirm that by incorporating V-doped WS2 , charge transfer in WS2 /Bi2 O2 Se heterostructures can be tuned, providing a novel light-harvesting technique for the development of the next generation of photovoltaic devices based on V-doped transition metal dichalcogenides (TMDCs)/Bi2 O2 Se.

Concentration Phase Separation of Substitution-Doped Atoms in TMDCs Monolayer

The density and spatial distribution of substituted dopants affect the transition metal dichalcogenides (TMDCs) materials properties. Previous studies have demonstrated that the density of dopants in TMDCs increases with the amount of doping, and the phenomenon of doping concentration difference between the nucleation center and the edge is observed, but the spatial distribution law of doping atoms has not been carefully studied. Here, it is demonstrated that the spatial distribution of dopants changes at high doping concentrations. The spontaneous formation of an interface with a steep doping concentration change is named concentration phase separation (CPS). The difference in the spatial distribution of dopants on both sides of the interface can be identified by an optical microscope. This is consistent with the results of spectral analysis and microstructure characterization of scanning transmission electron microscope. According to the calculation results of density functional theory, the chemical potential has two relatively stable energies as the doping concentration increases, which leads to the spontaneous formation of CPS. Understanding the abnormal phenomena is important for the design of TMDCs devices. This work has great significance in the establishment and improvement of the doping theory and the design of the doping process for 2D materials.

Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides

2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.

Ferromagnetic single-atom spin catalyst for boosting water splitting

Heterogeneous single-atom spin catalysts combined with magnetic fields provide a powerful means for accelerating chemical reactions with enhanced metal utilization and reaction efficiency. However, designing these catalysts remains challenging due to the need for a high density of atomically dispersed active sites with a short-range quantum spin exchange interaction and long-range ferromagnetic ordering. Here, we devised a scalable hydrothermal approach involving an operando acidic environment for synthesizing various single-atom spin catalysts with widely tunable substitutional magnetic atoms (M₁) in a MoS₂ host. Among all the M₁/MoS₂ species, Ni₁/MoS₂ adopts a distorted tetragonal structure that prompts both ferromagnetic coupling to nearby S atoms as well as adjacent Ni₁ sites, resulting in global room-temperature ferromagnetism. Such coupling benefits spin-selective charge transfer in oxygen evolution reactions to produce triplet O₂. Furthermore, a mild magnetic field of ~0.5 T enhances the oxygen evolution reaction magnetocurrent by ~2,880% over Ni₁/MoS₂, leading to excellent activity and stability in both seawater and pure water splitting cells. As supported by operando characterizations and theoretical calculations, a great magnetic-field-enhanced oxygen evolution reaction performance over Ni₁/MoS₂ is attributed to a field-induced spin alignment and spin density optimization over S active sites arising from field-regulated S(p)-Ni(d) hybridization, which in turn optimizes the adsorption energies for radical intermediates to reduce overall reaction barriers.

Engineering the Local Atomic Configuration in 2H TMDs for Efficient Electrocatalytic Hydrogen Evolution

The introduction of heteroatoms is a widely employed strategy for electrocatalysis of transition metal dichalcogenides (TMDs). This approach activates the inactive basal plane, effectively boosting the intrinsic catalytic activity. However, the effect of atomic configurations incorporated within the TMDs' lattice on catalytic activity is not thoroughly understood owing to the lack of controllable synthetic approaches for highly doped TMDs. In this study, we demonstrate a facile approach to realizing heavily doped MoS₂ with a high doping concentration above 16% via intermediate-reaction-mediated chemical vapor deposition. As the V doping concentration increased, the incorporated V atoms coalesced in a manner that enabled both the basal plane activation and electrical conductivity enhancement of MoS₂. This accelerated the kinetics of the hydrogen evolution reaction (HER) through the reduced Gibbs free energy of hydrogen adsorption, as evidenced by experimental and theoretical analyses. Consequently, the coalesced V-doped MoS₂ exhibited superior HER performance, with an overpotential of 100 mV at 10 mA cm^-2, surpassing the pristine and single-atom-doped counterparts. This study provides an intriguing pathway for engineering the atomic doping configuration of TMDs to develop efficient 2D nanomaterial-based electrocatalysts.

Advances in Two-Dimensional Magnetic Semiconductors via Substitutional Doping of Transition Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) are two-dimensional (2D) materials with remarkable electrical, optical, and chemical properties. One promising strategy to tailor the properties of TMDs is to create alloys through a dopant-induced modification. Dopants can introduce additional states within the bandgap of TMDs, leading to changes in their optical, electronic, and magnetic properties. This paper overviews chemical vapor deposition (CVD) methods to introduce dopants into TMD monolayers, and discusses the advantages, limitations, and their impacts on the structural, electrical, optical, and magnetic properties of substitutionally doped TMDs. The dopants in TMDs modify the density and type of carriers in the material, thereby influencing the optical properties of the materials. The magnetic moment and circular dichroism in magnetic TMDs are also strongly affected by doping, which enhances the magnetic signal in the material. Finally, we highlight the different doping-induced magnetic properties of TMDs, including superexchange-induced ferromagnetism and valley Zeeman shift. Overall, this review paper provides a comprehensive summary of magnetic TMDs synthesized via CVD, which can guide future research on doped TMDs for various applications, such as spintronics, optoelectronics, and magnetic memory devices.

Liquid-precursor-intermediated synthesis of atomically thin transition metal dichalcogenides

With the rapid development of integrated electronics and optoelectronics, methods for the scalable industrial-scale growth of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have become a hot research topic. However, the control of gas distribution of solid precursors in common chemical vapor deposition (CVD) is still a challenge, resulting in the growth of 2D TMDs strongly influenced by the location of the substrate from the precursor powder. In contrast, liquid-precursor-intermediated growth not only avoids the use of solid powders but also enables the uniform distribution of precursors on the substrate through spin-coating, which is much more favorable for the synthesis of wafer-scale TMDs. Moreover, the spin-coating process based on liquid precursors can control the thickness of the spin-coated films by regulating the solution concentration and spin-coating speed. Herein, this review focuses on the recent progress in the synthesis of 2D TMDs based on liquid-precursor-intermediated CVD (LPI-CVD) growth. Firstly, the different assisted treatments based on LPI-CVD strategies for monolayer 2D TMDs are introduced. Then, the progress in the regulation of the different physical properties of monolayer 2D TMDs by substitution of the transition metal and their corresponding heterostructures based on LPI-CVD growth are summarized. Finally, the challenges and perspectives of 2D TMDs based on the LPI-CVD method are discussed.

High Pressure-Driven Magnetic Disorder and Structural Transformation in Fe3 GeTe2 : Emergence of a Magnetic Quantum Critical Point

Among the recently discovered 2D intrinsic van der Waals (vdW) magnets, Fe₃ GeTe₂ (FGT) has emerged as a strong candidate for spintronics applications, due to its high Curie temperature (130 - 220 K) and magnetic tunability in response to external stimuli (electrical field, light, strain). Theory predicts that the magnetism of FGT can be significantly modulated by an external strain. However, experimental evidence is needed to validate this prediction and understand the underlying mechanism of strain-mediated vdW magnetism in this system. Here, the effects of pressure (0 - 20 GPa) are elucidated on the magnetic and structural properties of Fe₃ GeTe₂ by means of synchrotron Mössbauer source spectroscopy, X-ray powder diffraction and Raman spectroscopy over a wide temperature range of 10 - 290 K. A strong suppression of ferromagnetic ordering is observed with increasing pressure, and a paramagnetic ground state emerges when pressure exceeds a critical value, P_PM ≈ 15 GPa. The anomalous pressure dependence of structural parameters and vibrational modes is observed at P_C ≈ 7 GPa and attributed to an isostructural phase transformation. Density functional theory calculations complement these experimental findings. This study highlights pressure as a driving force for magnetic quantum criticality in layered vdW magnetic systems.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

Enhanced Magnetism and Anomalous Hall Transport through Two-Dimensional Tungsten Disulfide Interfaces

The magnetic proximity effect (MPE) has recently been explored to manipulate interfacial properties of two-dimensional (2D) transition metal dichalcogenide (TMD)/ferromagnet heterostructures for use in spintronics and valleytronics. However, a full understanding of the MPE and its temperature and magnetic field evolution in these systems is lacking. In this study, the MPE has been probed in Pt/WS₂/BPIO (biphase iron oxide, Fe₃O₄ and α-Fe₂O₃) heterostructures through a comprehensive investigation of their magnetic and transport properties using magnetometry, four-probe resistivity, and anomalous Hall effect (AHE) measurements. Density functional theory (DFT) calculations are performed to complement the experimental findings. We found that the presence of monolayer WS₂ flakes reduces the magnetization of BPIO and hence the total magnetization of Pt/WS₂/BPIO at T > ~120 K-the Verwey transition temperature of Fe₃O₄ (T_V). However, an enhanced magnetization is achieved at T < T_V. In the latter case, a comparative analysis of the transport properties of Pt/WS₂/BPIO and Pt/BPIO from AHE measurements reveals ferromagnetic coupling at the WS₂/BPIO interface. Our study forms the foundation for understanding MPE-mediated interfacial properties and paves a new pathway for designing 2D TMD/magnet heterostructures for applications in spintronics, opto-spincaloritronics, and valleytronics.

Spatial Control of Substitutional Dopants in Hexagonal Monolayer WS2 : The Effect of Edge Termination

The ability to control the density and spatial distribution of substitutional dopants in semiconductors is crucial for achieving desired physicochemical properties. Substitutional doping with adjustable doping levels has been previously demonstrated in 2D transition metal dichalcogenides (TMDs); however, the spatial control of dopant distribution remains an open field. In this work, edge termination is demonstrated as an important characteristic of 2D TMD monocrystals that affects the distribution of substitutional dopants. Particularly, in chemical vapor deposition (CVD)-grown monolayer WS₂ , it is found that a higher density of transition metal dopants is always incorporated in sulfur-terminated domains when compared to tungsten-terminated domains. Two representative examples demonstrate this spatial distribution control, including hexagonal iron- and vanadium-doped WS₂ monolayers. Density functional theory (DFT) calculations are further performed, indicating that the edge-dependent dopant distribution is due to a strong binding of tungsten atoms at tungsten-zigzag edges, resulting in the formation of open sites at sulfur-zigzag edges that enable preferential dopant incorporation. Based on these results, it is envisioned that edge termination in crystalline TMD monolayers can be utilized as a novel and effective knob for engineering the spatial distribution of substitutional dopants, leading to in-plane hetero-/multi-junctions that display fascinating electronic, optoelectronic, and magnetic properties.

Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices

Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.

Thickness-Tunable Growth of Composition-Controllable Two-Dimensional FexGeTe2

Two-dimensional (2D) magnetic materials provide an ideal platform for investigating novel magnetism and spin behavior in low-dimensional systems while being restricted by the deficiency of accurate bottom-up synthesis. To overcome this difficulty, a facile and universal flux-assisted growth (FAG) method is proposed to synthesize the multicomponent Fe_xGeTe₂ (x = 3-5) with different Fe contents and even alloyed with hetero metal atoms. This one-to-one method ensures the stoichiometry consistency from the Fe_xGeTe₂ and M_yFe_5-yGeTe₂ (M = Co, Ni) bulk crystal precursors to the 2D nanosheets, with controllable composition. Tuning the growth temperatures can provide thickness-tunable products. Changeable magnetic properties of Fe_xGeTe₂ and alloyed Co_yFe_5-yGeTe₂ are substantiated by the superconducting quantum interference device and reflective magnetic circular dichroism. This method generates thickness-tunable high-crystallinity Fe_xGeTe₂ samples without phase separation and exhibits a high tolerance to different substrates and a large temperature window, providing a new avenue to synthesize and explore such multicomponent 2D magnets and even the alloyed ones.

A Simplified Method of the Assessment of Magnetic Anisotropy of Commonly Used Sapphire Substrates in SQUID Magnetometers

Solid-state wafers are indispensable components in material science as substrates for epitaxial homo- or heterostructures or carriers for two-dimensional materials. However, reliable determination of magnetic properties of nanomaterials in volume magnetometry is frequently affected by unexpectedly rich magnetism of these substrates, including significant magnetic anisotropy. Here, we describe a simplified experimental routine of magnetic anisotropy assessment, which we exemplify and validate for epi-ready sapphire wafers from various sources. Both the strength and the sign of magnetic anisotropy are obtained from carefully designed temperature-dependent measurements, which mitigate all known pitfalls of volume SQUID magnetometry and are substantially faster than traditional approaches. Our measurements indicate that in all the samples, two types of net paramagnetic contributions coexist with diamagnetism. The first one can be as strong as 10% of the base diamagnetism of sapphire [-3.7(1) × 10^-7 emu/gOe], and when exceeds 2%, it exhibits pronounced magnetic anisotropy, with the easy axis oriented perpendicularly to the face of c-plane wafers. The other is much weaker, but exhibits a ferromagnetic-like appearance. These findings form an important message that nonstandard magnetism of common substrates can significantly influence the results of precise magnetometry of nanoscale materials and that its existence must be taken for granted by both industry and academia.

First-Principles Study of Induced Magnetism in Tungsten Vanadium Selenide Alloys for Spintronic Applications

The possibility of inducing magnetization in tungsten selenide monolayer by alloying with vanadium selenide was investigated through first-principles calculations. Electronic, optical, and magnetic properties of different W_1-x V _x Se₂ alloy compositions were studied extensively. As the proportion of vanadium atoms in the alloys increased, a phase transition from semiconducting to metallic to semiconducting was discovered. All alloy compositions demonstrated induced magnetism with a long-range ferromagnetic order. Interestingly, in the case of the W_0.25V_0.75Se₂ alloy, spin-up states in the band diagram showed a finite band gap, while a nonzero band gap was found for spin-down states. The W_0.25V_0.75Se₂ alloy can be used as a spin filter tunneling barrier exploiting this fascinating property. High spin polarization of the tunnel current was found for the alloy. Furthermore, under the Curie temperature, electrical conductivity for the spin-up channel was found to be zero, while conductivity for the spin-down channel was around 10¹⁹ (Ω cm s)^-1 when the chemical potential was 0.2 eV greater than the Fermi energy. Changes in optical properties were also investigated through time-dependent density functional theory calculations. The findings of this study will be beneficial for proposing new magnetic monolayer alloys for application in nanoscale spintronic devices.

P-Type 2D Semiconductors for Future Electronics

2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.

Enhanced Magnetism in Heterostructures with Transition-Metal Dichalcogenide Monolayers

Two-dimensional materials and their heterostructures have opened up new possibilities for magnetism at the nanoscale. In this study, we utilize first-principles simulations to investigate the structural, electronic, and magnetic properties of Fe/WSe₂/Pt systems containing pristine, defective, or doped WSe₂ monolayers. The proximity effects of the ferromagnetic Fe layer are studied by considering defective and vanadium-doped WSe₂ monolayers. All heterostructures are found to be ferromagnetic, and the insertion of the transition-metal dichalcogenide results in a redistribution of spin orientation and an increased density of magnetic atoms due to the magnetized WSe₂. There is an increase in the overall total density of states at the Fermi level due to WSe₂; however, the transition-metal dichalcogenide may lose its distinct semiconducting properties due to the stronger than van der Waals coupling. Spin-resolved electronic structure properties are linked to larger spin Seebeck coefficients found in heterostructures with WSe₂ monolayers.

Spin Ordering Induced Broadband Photodetection Based on Two-Dimensional Magnetic Semiconductor α-MnSe

Two-dimensional (2D) magnetic semiconductors are considered to have great application prospects in spintronic logic devices, memory devices, and photodetectors, due to their unique structures and outstanding physical properties in 2D confinement. Understanding the influence of magnetism on optical/optoelectronic properties of 2D magnetic semiconductors is a significant issue for constructing multifunctional electronic devices and implementing sophisticated functions. Herein, the influence of spin ordering and magnons on the optical/optoelectronic properties of 2D magnetic semiconductor α-MnSe synthesized by space-confined chemical vapor deposition (CVD) is explored systematically. The spin-ordering-induced magnetic phase transition triggers temperature-dependent photoluminescence spectra to produce a huge transition at Néel temperature (TN  ≈ 160 K). The magnons- and defects-induced emissions are the primary luminescence path below TN and direct internal 4 a T1g →6 A1g transition-induced emissions are the main luminescence path above TN . Additionally, the magnons and defect structures endow 2D α-MnSe with a broadband luminescence from 550 to 880 nm, and an ultraviolet-near-infrared photoresponse from 365 to 808 nm. Moreover, the device also demonstrates improved photodetection performance at 80 K, possibly influenced by spin ordering and trap states associated with defects. These above findings indicate that 2D magnetic semiconductor α-MnSe provides an excellent platform for magneto-optical and magneto-optoelectronic research.

Microalgae as an Effective Recovery Agent for Vanadium in Aquatic Environment

Given that vanadium is a valuable material, the implementation of vanadium recycling processes is thus necessary to enhance the element’s value chain as well as minimize its undesirable environmental consequences. Among various remediation methods available, a biological method based on microalgal adsorption is known to be eco-friendly and calls for further investigations. Herein, we evaluated V2O5 adsorption efficiencies of four different microalgal strains: Nannochloropsis oculata, Heterocapsa circularisquama, Chattonella marina, and Chattonella antiqua. Inductively coupled plasma mass spectrometry (ICP-MS) data indicated that vanadium concentration in the culture medium of Nannochloropsis oculata was reduced from 4.61 ± 0.11 mg L−1 to 1.85 ± 0.21 mg L−1 after being exposed to V2O5 solution for 24 h, whereas the supernatants of the other three strains displayed no change in vanadium ion concentration. Therefore, our results indicated a strong potential of Nannochloropsis oculata for recycling vanadium with approximately 59.9% of vanadium ion removal efficiency. Furthermore, morphological observation of Nannochloropsis oculata using scanning electron microscopy (SEM) indicated that the cells were able to maintain their intact morphology even under the presence of high concentrations of heavy metals. Due to the high adsorption efficiency and robustness of Nannochloropsis oculata, the results collectively support it as a potential strain for V2O5 recovery.

Photonic bandgap engineering in (VO2)n/(WSe2)nphotonic superlattice for versatile near- and mid-infrared phase transition applications

The application of the photonic superlattice in advanced photonics has become a demanding field, especially for two-dimensional and strongly correlated oxides. Because it experiences an abrupt metal-insulator transition near ambient temperature, where the electrical resistivity varies by orders of magnitude, vanadium oxide (VO₂) shows potential as a building block for infrared switching and sensing devices. We reported a first principle study of superlattice structures of VO₂as a strongly correlated phase transition material and tungsten diselenide (WSe₂) as a two-dimensional transition metal dichalcogenide layer. Based on first-principles calculations, we exploit the effect of semiconductor monoclinic and metallic tetragonal state of VO₂with WSe₂in a photonic superlattices structure through the near and mid-infrared (NIR-MIR) thermochromic phase transition regions. By increasing the thickness of the VO₂layer, the photonic bandgap (PhB) gets red-shifted. We observed linear dependence of the PhB width on the VO₂thickness. For the monoclinic case of VO₂, the number of the forbidden bands increase with the number of layers of WSe₂. New forbidden gaps are preferred to appear at a slight angle of incidence, and the wider one can predominate at larger angles. We presented an efficient way to control the flow of the NIR-MIR in both summer and winter environments for phase transition and photonic thermochromic applications. This study's findings may help understand vanadium oxide's role in tunable photonic superlattice for infrared switchable devices and optical filters.

The Magnetic Genome of Two-Dimensional van der Waals Materials

Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

Vanadium-Doped Molybdenum Diselenide Atomic Layers with Room-Temperature Ferromagnetism

Two-dimensional diluted magnetic semiconductors with high Curie temperature are highly sought after because of their potential applications in spintronics. Development of new techniques for preparation of high quanlity diluted magnetic semiconductors is critical for their applications. In this study, vanadium-doped molybdenum selenide, a new diluted magnetic semiconductor, was synthesized by a single-step chemical vapor deposition method. The merit of this method is that the molybdenum and vanadium precursors can be supplied to the growth substrate uniformly. Photoluminescence measurements reveal that the band gap of MoSe 2 decreases after doping, which can be attributed to the formation of impurity energy band caused by p-type doping at the valence band maximum. Thus, the V-doped MoSe 2 still maintains the semiconducting characteristics. Vibrating sample magnetometer studies clearly show the ferromagnetism of V-doped MoSe 2 at room temperature. DFT calculations illustrates the joint contribution of V dopants and nearby atoms to the magnetic moments. This study provides future prospects for the multifunctional application of two-dimensional materials.

CrxPt1-xTe2 (x ≤ 0.45): A Family of Air-Stable and Exfoliatable van der Waals Ferromagnets

The development of thermally robust, air-stable, exfoliatable two-dimensional van der Waals ferromagnetic materials with high transition temperatures is of great importance. Here, we establish a family of magnetic alloys, Cr_xPt_1-xTe₂ (x ≤ 0.45), that combines the stability of the late transition metal dichalcogenide PtTe₂ with magnetism from Cr. These materials are easily grown in crystal form from the melt, are stable in ambient conditions, and have among the highest concentrations of magnetic element substitution in transition metal dichalcogenide alloys. The highest Cr-substituted material, Cr_0.45Pt_0.55Te₂, exhibits ferromagnetic behavior below 220 K, and the easy axis is along the c-axis of the material, as determined using a combination of neutron diffraction and magnetic susceptibility measurements. These materials are metallic, with appreciable magnetoresistance below the Curie temperature. Single-crystal and powder diffraction measurements indicate Cr readily alloys onto the Pt site and does not sit in the van der Waals space, allowing these materials to be readily exfoliated to the few-layer regime. In summary, this air-stable, exfoliatable, high transition temperature ferromagnet shows great potential as building block for future 2D devices.

Two-dimensional magnetic atomic crystals

Two-dimensional (2D) magnetic crystals show many fascinating physical properties and have potential device applications in many fields. In this paper, the preparation, physical properties and device applications of 2D magnetic atomic crystals are reviewed. First, three preparation methods are presented, including chemical vapor deposition (CVD) molecular beam epitaxy (MBE) and single-crystal exfoliation. Second, physical properties of 2D magnetic atomic crystals, including ferromagnetism, antiferromagnetism, magnetic regulation and anomalous Hall effect are presented. Third, the application of 2D magnetic atomic crystals in heterojunctions reluctance and other aspects are briefly introduced. Finally, the future development direction and possible challenges of 2D magnetic atomic crystals are briefly addressed.

Atomically Thin 2D van der Waals Magnetic Materials: Fabrications, Structure, Magnetic Properties and Applications

Two-dimensional (2D) van der Waals (vdW) magnetic materials are considered to be ideal candidates for the fabrication of spintronic devices because of their low dimensionality, allowing the quantization of electronic states and more degrees of freedom for device modulation. With the discovery of few-layer Cr2Ge2Te6 and monolayer CrI3 ferromagnets, the magnetism of 2D vdW materials is becoming a research focus in the fields of material science and physics. In theory, taking the Heisenberg model with finite-range exchange interactions as an example, low dimensionality and ferromagnetism are in competition. In other words, it is difficult for 2D materials to maintain their magnetism. However, the introduction of anisotropy in 2D magnetic materials enables the realization of long-range ferromagnetic order in atomically layered materials, which may offer new effective means for the design of 2D ferromagnets with high Curie temperature. Herein, current advances in the field of 2D vdW magnetic crystals, as well as intrinsic and induced ferromagnetism or antiferromagnetism, physical properties, device fabrication, and potential applications, are briefly summarized and discussed.

Conduction band-edge valley splitting in two-dimensional ferroelectric AgBiP2S6 by magnetic doping: towards electron valley-polarized transport

Two-dimensional valleytronic systems, using the valley index of carriers to perform logic operations, serves as the basis of the next-generation information technologies. For efficient use of the valley degree of freedom, the major challenge currently is to lift the valley degeneracy to achieve valley splitting. In this work, using first-principles calculations, we propose that valley splitting can be readily achieved in a ferroelectric AgBiP₂S₆ monolayer by TM doping (TM = V, Cr, Mn, Fe, Co, and Ni), which is highly feasible in experiments. In sharp contrast to most previous reports of valley-related features in the valence band-edge, the pristine AgBiP₂S₆ monolayer has a direct band-gap located at K/K′ points of the Brillouin zone and harbors strong coupled spin and valley physics around the conduction band-edge, due to inversion symmetry breaking combined with strong spin–orbit coupling. By TM-doping, the local magnetic moment can be introduced into the system, which can destroy the valley degeneration of the conduction band-edge and induce valley splitting. Especially in a V-doped system, accompanied with a large valley splitting (26.8 meV), there is a serious n-type doping in AgBiP₂S₆. The efficient electron-doping moves the Fermi level just located between the conduction band minimum of the K/K′ valleys, which is suitable for valley-polarized transport. Moreover, the valley-polarized index can be flipped by applying a small magnetic field to rotate the magnetocrystalline direction. The magnitude of valley splitting relies on the strength of orbital hybridization between the TM-d and Bi-p states and can be tuned continually by applying biaxial strain. Under an in-plane electric field, such valley degeneracy breaking would give rise to the long-sought anomalous valley Hall effect, which is crucial to design a valleytronic device.

The anomalous valley Hall effect in two-dimensional ferroelectric AgBiP₂S₆ by magnetic doping offering a possible avenue to realize data storage using valley splitting.

Large-Area Epitaxial Film Growth of van der Waals Ferromagnetic Ternary Chalcogenides

Following the first experimental realization of intrinsic ferromagnetism in 2D van der Waals (vdW) crystals, several ternary metal chalcogenides with unprecedented long-range ferromagnetic order have been explored. However, the synthesis of large-area 2D ternary metal chalcogenide thin films is a great challenge, and a generalized synthesis has not been demonstrated yet. Here, a quick and scalable synthesis of epitaxially aligned ferromagnetic ternary metal chalcogenide thin films (Cr₂ Ge₂ Te₆ , Cr₂ Si₂ Te₆ , Mn₃ Si₂ Te₆ ) is reported. The synthesis is based on the flux-controlled surface diffusion of Te on metal (Cr, Mn)-deposited wafer (Ge, Si) substrates. Magnetic anisotropy study of the epitaxial ternary thin films reveals the intrinsic magnetic easy axis; out-of-plane direction for Cr₂ Ge₂ Te₆ and Cr₂ Si₂ Te₆ , and in-plane direction for Mn₃ Si₂ Te₆ . In addition to the synthesis, this work creates an opportunity for transfer-free device fabrication for realizing magnetoelectronics based on the electrical control of both charge and spin degrees of freedom in 2D ferromagnetic semiconductors.

Room Temperature Ferromagnetism of Monolayer Chromium Telluride with Perpendicular Magnetic Anisotropy

The realization of long-range magnetic ordering in 2D systems can potentially revolutionize next-generation information technology. Here, the successful fabrication of crystalline Cr₃ Te₄ monolayers with room temperature (RT) ferromagnetism is reported. Using molecular beam epitaxy, the growth of 2D Cr₃ Te₄ films with monolayer thickness is demonstrated at low substrate temperatures (≈100 °C), compatible with Si complementary metal oxide semiconductor technology. X-ray magnetic circular dichroism measurements reveal a Curie temperature (T_c ) of v344 K for the Cr₃ Te₄ monolayer with an out-of-plane magnetic easy axis, which decreases to v240 K for the thicker film (≈7 nm) with an in-plane easy axis. The enhancement of ferromagnetic coupling and the magnetic anisotropy transition is ascribed to interfacial effects, in particular the orbital overlap at the monolayer Cr₃ Te₄ /graphite interface, supported by density-functional theory calculations. This work sheds light on the low-temperature scalable growth of 2D nonlayered materials with RT ferromagnetism for new magnetic and spintronic devices.

Synthesis, structure, and magnetic properties of the quaternary oxysulfides Ln 5V3O7S6 (Ln = La, Ce)

Two rare earth oxysulfides Ln 5V3O7S6 (Ln = La, Ce) have been synthesized and their structures determined. The two isostructural compounds crystallize in the orthorhombic space group Pmmn (no. 59). The structure features one-dimensional edge-sharing VS4O2 octahedron chains parallel to the b axis. The bonding between V and S/O is covalent, and between Ln 3+ and the rest of the matrix ionic. Magnetic susceptibility measurement revealed that V is in a mixed valence state of V3+ and V4+. Its magnetic behavior follows the Curie-Weiss law.

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition (CVD) using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V) doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re- and V-doped TMDCs. Electrical conductivity increases up to a factor of 108 in the degenerate V-doped WS2 and WSe2 . Using V-doped WSe2 as vdW contact, the on-state current and on/off ratio of WSe2 -based field-effect transistors have been substantially improved (from ≈10-8 to 10-5 A; ≈104 to 108 ), compared to metal contacts. Future studies on lateral contacts and interconnects using doped TMDCs will pave the way for 2D integrated circuits and flexible electronics.

Enhanced Electrical Performance of Monolayer MoS2 with Rare Earth Element Sm Doping

Rare earth (RE) element-doped two-dimensional (2D) transition metal dichalcogenides (TMDCs) with applications in luminescence and magnetics have received considerable attention in recent years. To date, the effect of RE element doping on the electronic properties of monolayer 2D-TMDCs remains unanswered due to challenges including the difficulty of achieving valid monolayer doping and introducing RE elements with distinct valence and atomic configurations. Herein, we report a unique strategy to grow the Sm-doped monolayer MoS₂ film by using an atmospheric pressure chemical vapor deposition method with the substrate face down on top of the growth source. A stable monolayer triangular Sm-doped MoS₂ was achieved. The threshold voltage of an Sm-doped MoS₂-based field effect transistor (FET) moved from -12 to 0 V due to the p-type character impurity state introduced by Sm ions in monolayer MoS₂. Additionally, the electrical performance of the monolayer MoS₂-based FET was improved by RE element Sm doping, including a 500% increase of the on/off current ratio and a 40% increase of the FET's mobility. The electronic property enhancement resulted from Sm doping MoS₂, which led internal lattice strain and changes in Fermi energy levels. These findings provide a general approach to synthesize RE element-doped monolayer 2D-TMDCs and to enrich their applications in electrical devices.

One-step synthesis of single-site vanadium substitution in 1T-WS2 monolayers for enhanced hydrogen evolution catalysis

Metallic tungsten disulfide (WS₂) monolayers have been demonstrated as promising electrocatalysts for hydrogen evolution reaction (HER) induced by the high intrinsic conductivity, however, the key challenges to maximize the catalytic activity are achieving the metallic WS₂ with high concentration and increasing the density of the active sites. In this work, single-atom-V catalysts (V SACs) substitutions in 1T-WS₂ monolayers (91% phase purity) are fabricated to significantly enhance the HER performance via a one-step chemical vapor deposition strategy. Atomic-resolution scanning transmission electron microscopy (STEM) imaging together with Raman spectroscopy confirm the atomic dispersion of V species on the 1T-WS₂ monolayers instead of energetically favorable 2H-WS₂ monolayers. The growth mechanism of V SACs@1T-WS₂ monolayers is experimentally and theoretically demonstrated. Density functional theory (DFT) calculations demonstrate that the activated V-atom sites play vital important role in enhancing the HER activity. In this work, it opens a novel path to directly synthesize atomically dispersed single-metal catalysts on metastable materials as efficient and robust electrocatalysts.

Ru is one of the most active metals for oxygen evolution reaction, but it quickly dissolves in acidic electrolyte particularly in nanosized form. Here the authors show that coral-like solid-solution Ru‒Ir consisting of 3 nm-thick sheets with only 6 at% Ir is a long-lived catalyst with high activity