Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS2, WSe2, and WTe2

Mesoscopic Stacking Reconfigurations in Stacked van der Waals Film

Mesoscopic-scale stacking reconfigurations are investigated when van der Waals (vdW) films are stacked. A method to visualize complicated stacking structures and mechanical distortions simultaneously in stacked atom-thick films using Raman spectroscopy is developed. In the rigid limit, it is found that the distortions originate from the transfer process, which can be understood through thin film mechanics with a large elastic property mismatch. In contrast, with atomic corrugations, the in-plane strain fields are more closely correlated with the stacking configuration, highlighting the impact of atomic reconstructions on the mesoscopic scale. It is discovered that the grain boundaries do not have a significant effect while the cracks are causing inhomogeneous strain in stacked polycrystalline films. This result contributes to understanding the local variation of emerging properties from moiré structures and advancing the reliability of stacked vdW material fabrication.

Mechanical properties of bilayer WS2and Graphene-WS2Hybrid composites by molecular dynamics simulations

In the present work, by using molecular dynamics (MD) simulations, we investigate the mechanical properties of different nanostructures that may be core elements in next generation flexible/wearable photovoltaic devices, namely double layer WS2nanosheets (DLNS), graphene/WS2(layer) composites and graphene/WS2nanotube (NT) composites. Our results reveal that the mechanical properties of DLNS deteriorate when compared to those of monolayer WS2. Owing to graphene's reinforcement action, the mechanical properties of graphene/WS2(layer) composite with both layers deformed are superior than those of WS2, even though inferior than those of bare graphene. If stress is applied only to the graphene layer, the graphene/WS2composite retains the most of the strength and toughness of monolayer graphene, decreasing the fracture strength and Young's modulus by only 9.7% and 16.3%, respectively. Similarly, in the case of the graphene/WS2NT composite the mechanical strength and toughness experience a reduction compared to monolayer graphene, specifically by 15% and 53% for fracture strength and Young's modulus, respectively. Considering the market's keen interest in nanomaterials, particularly van der Waals (vdW) ones, for flexible and wearable photovoltaic devices, the findings presented here will significantly enhance the effective utilization of vdW composites.

Exceptionally large fracture strength and stretchability of 2D ReS2 and ReSe2

Two-dimensional rhenium disulfide (ReS2) and rhenium diselenide (ReSe2) have gained popularity due to their outstanding optoelectronic properties. However, their mechanical behavior has not been investigated experimentally and many of their mechanical parameters are still unexplored. Here we conducted atomic force microscopy (AFM) indentation experiments and extracted their Young's moduli and found that it is thickness-independent. In addition, we found that both materials are capable of sustaining large pretension. Importantly, fracture tests showed that these materials exhibit exceptionally large fracture strength (32.9 ± 2.4 GPa and 27.7 ± 3.9 GPa for ReS2 and ReSe2, respectively) and stretchability (up to 24.2% for ReS2 and 23.0% for ReSe2). Therefore, this study shows the superior mechanical properties of ReS2 and ReSe2. Thus, it will open the path for their future integration into advanced applications that will benefit from their outstanding mechanical durability and attractive optoelectronic properties, such as flexible photodetectors, stretchable photonic devices, and strain-engineered electronics.

Sub-Diffraction Correlation of Quantum Emitters and Local Strain Fields in Strain-Engineered WSe2 Monolayers

Strain-engineering in atomically thin metal dichalcogenides is a useful method for realizing single-photon emitters (SPEs) for quantum technologies. Correlating SPE position with local strain topography is challenging due to localization inaccuracies from the diffraction limit. Currently, SPEs are assumed to be positioned at the highest strained location and are typically identified by randomly screening narrow-linewidth emitters, of which only a few are spectrally pure. In this work, hyperspectral quantum emitter localization microscopy is used to locate 33 SPEs in nanoparticle-strained WSe2 monolayers with sub-diffraction-limit resolution (≈30 nm) and correlate their positions with the underlying strain field via image registration. In this system, spectrally pure emitters are not concentrated at the highest strain location due to spectral contamination; instead, isolable SPEs are distributed away from points of peak strain with an average displacement of 240 nm. These observations point toward a need for a change in the design rules for strain-engineered SPEs and constitute a key step toward realizing next-generation quantum optical architectures.

Locally Strained 2D Materials: Preparation, Properties, and Applications

2D materials are promising for strain engineering due to their atomic thickness and exceptional mechanical properties. In particular, non-uniform and localized strain can be induced in 2D materials by generating out-of-plane deformations, resulting in novel phenomena and properties, as witnessed in recent years. Therefore, the locally strained 2D materials are of great value for both fundamental studies and practical applications. This review discusses techniques for introducing local strains to 2D materials, and their feasibility, advantages, and challenges. Then, the unique effects and properties that arise from local strain are explored. The representative applications based on locally strained 2D materials are illustrated, including memristor, single photon emitter, and photodetector. Finally, concluding remarks on the challenges and opportunities in the emerging field of locally strained 2D materials are provided.

Vacancy-mediated inelasticity in two-dimensional vanadium-based dichalcogenides

Amongst the two-dimensional (2D) transition metal dichalcogenide (TMDC) family, VX2 (X = S, and Se) are key members for next-generation electronic, spintronic, and energy storage applications. Structural defects may be introduced in these emerging atomically thin materials during synthesis, which can lead to both desirable and detrimental impacts on the physical and chemical properties. Owing to their brittle behaviour, defects may deteriorate the mechanical properties of 2D TMDCs drastically, causing reliability-related issues critical for long-term device-scale applications. In this context, more than 1600 classical molecular dynamics simulations were performed to obtain estimates of chirality-dependent failure stresses of 2D VX2 under technologically relevant conditions that are encountered in typical industrial and lab-scale experiments. The energy barriers associated with the fracture of defective samples were calculated using a thermal activation-based analytical model. Furthermore, the effect of various concentrations of randomly distributed defects on the mechanical reliability of VX2 samples was explored using two-parameter Weibull statistics. These monolayers were found to possess strong flaw tolerance and high Weibull modulus values, making them promising for flexible electronics and energy storage.

Photo-oxidative Crack Propagation in Transition Metal Dichalcogenides

Monolayered transition-metal dichalcogenides (TMDs) are easily exposed to air, and their crystal quality can often be degraded via oxidation, leading to poor electronic and optical device performance. The degradation becomes more severe in the presence of defects, grain boundaries, and residues. Here, we report crack propagation in pristine TMD monolayers grown by chemical vapor deposition under ambient conditions and light illumination. Under a high relative humidity (RH) of ∼60% and white light illumination, the cracks appear randomly. Photo-oxidative cracks gradually propagated along the grain boundaries of the TMD monolayers. In contrast, under low RH conditions of ∼2%, cracks were scarcely observed. Crack propagation is predominantly attributed to the accumulation of water underneath the TMD monolayers, which is preferentially absorbed by hygroscopic alkali metal-based precursor residues. Crack propagation is further accelerated by the cyclic process of photo-oxidation in a basic medium, leading to localized tensile strain. We also found that such crack propagation is prevented after the removal of alkali metals via the transfer of the sample to other substrates.

Dynamical control of nanoscale light-matter interactions in low-dimensional quantum materials

Tip-enhanced nano-spectroscopy and -imaging have significantly advanced our understanding of low-dimensional quantum materials and their interactions with light, providing a rich insight into the underlying physics at their natural length scale. Recently, various functionalities of the plasmonic tip expand the capabilities of the nanoscopy, enabling dynamic manipulation of light-matter interactions at the nanoscale. In this review, we focus on a new paradigm of the nanoscopy, shifting from the conventional role of imaging and spectroscopy to the dynamical control approach of the tip-induced light-matter interactions. We present three different approaches of tip-induced control of light-matter interactions, such as cavity-gap control, pressure control, and near-field polarization control. Specifically, we discuss the nanoscale modifications of radiative emissions for various emitters from weak to strong coupling regime, achieved by the precise engineering of the cavity-gap. Furthermore, we introduce recent works on light-matter interactions controlled by tip-pressure and near-field polarization, especially tunability of the bandgap, crystal structure, photoluminescence quantum yield, exciton density, and energy transfer in a wide range of quantum materials. We envision that this comprehensive review not only contributes to a deeper understanding of the physics of nanoscale light-matter interactions but also offers a valuable resource to nanophotonics, plasmonics, and materials science for future technological advancements.

Low-Frequency Raman Study of Large-Area Twisted Bilayers of WS2 Stacked by an Etchant-Free Transfer Method

Monolayer transition metal dichalcogenides have strong intracovalent bonding. When stacked in multilayers, however, weak van der Waals interactions dominate interlayer mechanical coupling and, thus, influence their lattice vibrations. This study presents the frequency evolution of interlayer phonons in twisted WS2 bilayers, highly subject to the twist angle. The twist angle between the layers is controlled to modulate the spacing between the layers, which, in turn, affects the interlayer coupling that is probed by Raman spectroscopy. The shifts of high-frequency E2g1 (Γ) and A1g (Γ) phonon modes and their frequency separations are dependent on the twist angle, reflecting the correlation between the interlayer mechanical coupling and twist angle. In this work, we fabricated large-area, twisted bilayer WS2 with a clean interface with controlled twist angles. Polarized Raman spectroscopy identified new interlayer modes, which were not previously reported, depending on the twist angle. The appearance of breathing modes in Raman phonon spectra provides evidence of strong interlayer coupling in bilayer structures. We confirm that the twist angle can alter the exciton and trion dynamics of bilayers as indicated by the photoluminescence peak shift. These large-area controlled twist angle samples have practical applications in optoelectronic device fabrication and twistronics.

Trends and prospects of 2-D tungsten disulphide (WS2) hybrid nanosystems for environmental and biomedical applications

Recently, 2D layered transition metal dichalcogenides (TMDCs) with their ultrathin sheet nanostructure and diversified electronic structure have drawn attention for various advanced applications to achieve high-performance parameters. Unique 2D TMDCs mainly comprise transition metal and chalcogen element where chalcogen element layers sandwich the transition metal element layer. In such a case, various properties can be enhanced and controlled depending on the targeted application. Among manipulative 2D TMDCs, tungsten disulphide (WS2) is one of the emerging nano-system due to its fascinating properties in terms of direct band gap, higher mobility, strong photoluminescence, good thermal stability, and strong magnetic field interaction. The advancement in characterization techniques, especially scattering techniques, can help in study of opto-electronic properties of 2D TMDCs along with determination of layer variations and investigation of defect. In this review, the fabrication and applications are well summarized to optimize an appropriate WS2-TMDCs assembly according to focused field of research. Here, the scientific investigations on 2D WS2 are studied in terms of its structure, role of scattering techniques to study its properties, and synthesis routes followed by its potential applications for environmental remediation (e.g., photocatalytic degradation of pollutants, gas sensing, and wastewater treatment) and biomedical domain (e.g., drug delivery, photothermal therapy, biomedical imaging, and biosensing). Further, a special emphasis is given to the significance of 2D WS2 as a substrate for surface-enhanced Raman scattering (SERS). The discussion is further extended to commercial and industrial aspects, keeping in view major research gaps in existing research studies.

Capping layer enabled controlled fragmentation of two-dimensional materials by cold drawing

Cold drawing, a well-established processing technique in the polymer industry, was recently revisited and discovered as an efficient material structuring method to create ordered patterns in composites consisting of both cold-drawable polymers and brittle target materials. Such a high-yield and low-cost manufacturing technique enables the large-scale fabrication of micro-ribbon structures for a wide range of functional materials, including two-dimensional (2D) layered materials. Compared to the abundant phenomenological results from experiments, however, the underlying mechanisms of this technique are not fully explored. Here, supported by experimental investigation, finite element calculations, and theoretical modeling, we systematically study the effect of a capping layer on the controlled fragmentation of 2D materials deposited on polymer substrates during the cold drawing. The capping layer is found to prevent the premature fracture of the 2D thin films during elastic deformation of the substrate, when a specific requirement proposed by the theoretical model is satisfied. Controlled fragmentation is enabled in the necking stage due to the protective effect of the capping layer, which also influences the size of the resulting fragments. Flexible and stretchable electrodes based on 2D material ribbons are fabricated to demonstrate the effectiveness of the proposed roadmap. This study gives an accurate understanding of interactions between 2D materials, polymer substrates, and capping layers during cold drawing, and offers guidance for potential applications such as flexible electronics.

Gold Nanodrum Resonators

Nanodrum resonators have been fabricated using nanometer-thick gold films as the drumheads. The fabrication method is favorable for large-area array manufacture of arbitrary shapes. The drum resonators exhibit fundamental mode vibration frequencies in the MHz regime. We use the stretched-plate model to describe the natural vibrations of the drum. The Q factor of the fundamental mode increases as the thickness of the drum increases and decreases as the drum diameter goes up. The highest Q factor of the fundamental mode reaches 290 at room temperature and atmospheric pressure. Based on the deduced material properties we estimate that the resonator has a mass sensitivity of 1.11 × 10-22 g/Hz.

Simultaneous quantification of Young's modulus and dispersion forces with nanoscale spatial resolution

Many advances in polymers and layered materials rely on a precise understanding of the local interactions between adjacent molecular or atomic layers. Quantifying dispersion forces at the nanoscale is particularly challenging with existing methods often time consuming, destructive, relying on surface averaging or requiring bespoke equipment. Here, we present a non-invasive method able to quantify the local mechanical and dispersion properties of a given sample with nanometer lateral precision. The method, based on atomic force microscopy (AFM), uses the frequency shift of a vibrating AFM cantilever in combination with established contact mechanics models to simultaneously derive the Hamaker constant and the effective Young's modulus at a given sample location. The derived Hamaker constant and Young's modulus represent an average over a small (typically <100) number of molecules or atoms. The oscillation amplitude of the vibrating AFM probe is used to select the length-scale of the features to analyse, with small vibrations able to resolve the contribution of sub-nanometric defects and large ones exploring effectively homogeneous areas. The accuracy of the method is validated on a range of 2D materials in air and water as well as on polymer thin films. We also provide the first experimental measurements of the Hamaker constant of HBN, MoT2, WSe2and polymer films, verifying theoretical predictions and computer simulations. The simplicity and robustness of the method, implemented with a commercial AFM, may support a broad range of technological applications in the growing field of polymers and nanostructured materials where a fine control of the van der Waals interactions is crucial to tune their properties.

2D Materials in the Display Industry: Status and Prospects

With advances in flexible electronics, innovative foldable, rollable, and stretchable displays have been developed to maintain their performance under various deformations. These flexible devices can develop more innovative designs than conventional devices due to their light weight, high space efficiency, and practical convenience. However, developing flexible devices requires material innovation because the devices must be flexible and exhibit desirable electrical insulating/semiconducting/metallic properties. Recently, emerging 2D materials such as graphene, hexagonal boron nitride, and transition metal dichalcogenides have attracted considerable research attention because of their outstanding electrical, optical, and mechanical properties, which are ideal for flexible electronics. The recent progress and challenges of 2D material growth and display applications are reviewed and perspectives for exploring 2D materials for display applications are discussed.

Built-in tensile strain dependence on the lateral size of monolayer MoS2 synthesized by liquid precursor chemical vapor deposition

Strain engineering is an efficient tool to tune and tailor the electrical and optical properties of 2D materials. The built-in strain can be tuned during the synthesis process of a two-dimensional semiconductor, such as molybdenum disulfide, by employing different growth substrates with peculiar thermal properties. In this work, we demonstrate that the built-in strain of MoS2 monolayers, grown on a SiO2/Si substrate by liquid precursor chemical vapor deposition, is mainly dependent on the size of the monolayer. In fact, we identify a critical size equal to 20 μm, from which the built-in strain increases drastically. The built-in strain is the maximum for a 60 μm sized monolayer, leading to 1.2% tensile strain with a partial release of strain close to the monolayer triangular vertexes due to the formation of nanocracks. These findings also imply that the standard method for evaluation of the number of layers based on the Raman mode separation can become unreliable for highly strained monolayers with a lateral size above 20 μm.

Anomalous isotope effect on mechanical properties of single atomic layer Boron Nitride

The ideal mechanical properties and behaviors of materials without the influence of defects are of great fundamental and engineering significance but considered inaccessible. Here, we use single-atom-thin isotopically pure hexagonal boron nitride (hBN) to demonstrate that two-dimensional (2D) materials offer us close-to ideal experimental platforms to study intrinsic mechanical phenomena. The highly delicate isotope effect on the mechanical properties of monolayer hBN is directly measured by indentation: lighter 10B gives rise to higher elasticity and strength than heavier 11B. This anomalous isotope effect establishes that the intrinsic mechanical properties without the effect of defects could be measured, and the so-called ultrafine and normally neglected isotopic perturbation in nuclear charge distribution sometimes plays a more critical role than the isotopic mass effect in the mechanical and other physical properties of materials.

Thickness Mapping and Layer Number Identification of Exfoliated van der Waals Materials by Fourier Imaging Micro-Ellipsometry

As performance of van der Waals heterostructure devices is governed by the nanoscale thicknesses and homogeneity of their constituent mono- to few-layer flakes, accurate mapping of these properties with high lateral resolution becomes imperative. Spectroscopic ellipsometry is a promising optical technique for such atomically thin-film characterization due to its simplicity, noninvasive nature and high accuracy. However, the effective use of standard ellipsometry methods on exfoliated micron-scale flakes is inhibited by their tens-of-microns lateral resolution or slow data acquisition. In this work, we demonstrate a Fourier imaging spectroscopic micro-ellipsometry method with sub-5 μm lateral resolution and three orders-of-magnitude faster data acquisition than similar-resolution ellipsometers. Simultaneous recording of spectroscopic ellipsometry information at multiple angles results in a highly sensitive system, which is used for performing angstrom-level accurate and consistent thickness mapping on exfoliated mono-, bi- and trilayers of graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenide (MoS₂, WS₂, MoSe₂, WSe₂) flakes. The system can successfully identify highly transparent monolayer hBN, a challenging proposition for other characterization tools. The optical microscope integrated ellipsometer can also map minute thickness variations over a micron-scale flake, revealing its lateral inhomogeneity. The prospect of adding standard optical elements to augment generic optical imaging and spectroscopy setups with accurate in situ ellipsometric mapping capability presents potential opportunities for investigation of exfoliated 2D materials.

Funnel Devices Based on Asymmetrically Strained Transition Metal Dichalcogenides

The strain applied to transition metal dichalcogenides (TMDs) reduces their energy bandgap, and local strains result in a funnel-like band structure in which funneled excitons move toward the most strained region. Herein, a funnel device based on asymmetrically strained WS₂ and MoS₂ is reported. Asymmetric strains are induced by transferring the TMD flakes onto a fork-shaped SU-8 microstructure. Raman and photoluminescence spectra peaks are shifted according to the morphology of the SU-8 microstructure, indicating the application of asymmetric strains to the TMDs. To investigate whether funneled excitons can be converted to electrical currents, various devices are constructed by depositing symmetric and asymmetric electrodes onto the strained TMDs. The scanning photocurrent mapping images follow a fork-shaped pattern, indicating probable conversion of the funneled excitons into electrical currents. In the case of the funnel devices with asymmetric Au and Al electrodes, short-circuit current (I_SC ) of WS₂ is enhanced by the strains, whereas I_SC of MoS₂ is suppressed because the Schottky barrier lowers with increasing strain for the MoS₂ . These results demonstrate that the funnel devices can be implemented using asymmetrically strained TMDs and the effect of strains on the Schottky barrier is dependent on the TMD used.

Graphene nanoplatelets and other 2D-materials as protective means against the fading of coloured inks, dyes and paints

The present work demonstrates the ability of graphene nanoplatelets (GNPs) and other two-dimensional materials (2DMs) like tungsten disulfide (WS2), molybdenum disulfide (MoS2) and hexagonal boron nitride (hBN) to act as protective barriers against the fading of architectural paints and also inks/paints used in art. The results present a new approach for improving the lightfastness of colours of artworks and painted indoor/outdoor wall surfaces taking advantage of the remarkable properties of 2DMs. As shown herein, commercial inks and architectural paints of different colours doped with graphene nanoplatelets (GNPs), graphene oxide (GO), reduced graphene oxide (rGO) and other 2DMs, exhibit a superior resistance to fading under ultraviolet radiation or even under exposure to visible light. A spectroscopic study on these inks and dyes reveals that the peaks which are characteristic of the colour pigments are less affected from aging/fading when the GNPs and the other 2DMs are present. The protection mechanism for the GNPs and the other 2DMs differs. For GNPs, mainly their high surface area which leads to free radicals scavenging (especially hydroxyl radicals), and secondarily their UV absorption, are responsible for their protection effects, while for GO, a transition to rGO structures and consequently to 'smart' paints can be observed after the performed aging routes. In this way, the paint gets improved by time preventing or slowing its own fading and decolorization. For the other 2DMs, the transition-metal dichalcogenides performed better than hBN, even though they all absorb in the UV region. This can be ascribed to the facts that the formers also absorb in the visible, while hBN does not, while most importantly, they can trap reactive oxygen species (ROS) and corrosive gases in their structure as opposed to hBN. By conducting colorimetric measurements, we have discovered that the lifetime of the as-developed 2DM-doped inks and paints can be extended by up to ∼40%.

Variant Plateau's law in atomically thin transition metal dichalcogenide dome networks

Since its fundamental inception from soap bubbles, Plateau's law has sparked extensive research in equilibrated states. However, most studies primarily relied on liquids, foams or cellular structures, whereas its applicability has yet to be explored in nano-scale solid films. Here, we observed a variant Plateau's law in networks of atomically thin domes made of solid two-dimensional (2D) transition metal dichalcogenides (TMDs). Discrete layer-dependent van der Waals (vdWs) interaction energies were experimentally and theoretically obtained for domes protruding in different TMD layers. Significant surface tension differences from layer-dependent vdWs interaction energies manifest in a variant of this fundamental law. The equivalent surface tension ranges from 2.4 to 3.6 N/m, around two orders of magnitude greater than conventional liquid films, enabling domes to sustain high gas pressure and exist in a fundamentally variant nature for several years. Our findings pave the way towards exploring variant discretised states with applications in opto-electro-mechanical devices.

Interfacial-Water-Modulated Photoluminescence of Single-Layer WS2 on Mica

Because of their bandgap tunability and strong light-matter interactions, two-dimensional (2D) semiconductors are considered promising candidates for next-generation optoelectronic devices. However, their photophysical properties are greatly affected by their surrounding environment because of their 2D nature. In this work, we report that the photoluminescence (PL) of single-layer WS₂ is substantially affected by interfacial water that is inevitably present between it and the supporting mica substrates. Using PL spectroscopy and wide-field imaging, we show that the emission signals from A excitons and their negative trions decreased at distinctively different rates with increasing excitation power, which could be attributed to the more efficient annihilation between excitons than between trions. By gas-controlled PL imaging, we also prove that the interfacial water converted the trions into excitons by depleting native negative charges through an oxygen reduction reaction, which rendered the excited WS₂ more susceptible to nonradiative decay via exciton-exciton annihilation. Understanding the role of nanoscopic water in complex low-dimensional materials will eventually contribute to devising their novel functions and related devices.

Unlock the Potassium Storage Behavior of Single-Phased Tungsten Selenide Nanorods via Large Cation Insertion

Metal chalcogenide anodes with a layered structure have been regarded as potential K-based electrochemical energy storage devices with high energy density for large-scale energy storage applications. However, their development is impeded by the slow K-ion transport kinetics and poor structural stability. In this work, the energy-storage behavior is investigated first and decisively associated them with the capacity-degradation of the promising layer-structured WSe₂ from an integrated chemical and physical point of view. Then, a single-phased WSe₂ with pre-intercalated high K content (SP-K_x WSe₂ ) is designed to overcome the capacity-degradation issue fundamentally. Theoretical calculations clarify the beneficial effect of K-ions inside the interlayer of WSe₂ on boosting its electrochemical performance, including increasing the electronic conductivity, promoting the K-ion diffusivity, and improving the structural stability. The novel design enables the K-ions pre-intercalated WSe₂ anode material to exhibit a high reversible specific capacity of 211 mAh g^-1 at 5 A g^-1 and superior cycling stability (89.3% capacity retention after 5000 cycles at 1 A g^-1 ). Especially, the K-ion hybrid capacitor, assembled from the anode of SP-K_x WSe₂ and the cathode of porous activated carbon, delivers superior energy-density up to 175 Wh kg^-1 , high power-density as well as exceptional cycling stability.

A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers

Two-dimensional (2D) materials have enabled promising applications in modern miniaturized devices. However, device operation may lead to substantial temperature rise and thermal stress, resulting in device failure. To address such thermal challenges, the thermal expansion coefficient (TEC) needs to be well understood. Here, we characterize the in-plane TECs of transition metal dichalcogenide (TMD) monolayers and demonstrate superior accuracy using a three-substrate approach. Our measurements confirm the physical range of 2D monolayer TECs and, hence, address the more than two orders of magnitude discrepancy in literature. Moreover, we identify the thermochemical electronegativity difference of compositional elements as a descriptor, enabling the fast estimation of TECs for various TMD monolayers. Our work presents a unified approach and descriptor for the thermal expansion of TMD monolayers, which can serve as a guideline toward the rational design of reliable 2D devices.

A Capillary-Force-Assisted Transfer for Monolayer Transition-Metal-Dichalcogenide Crystals with High Utilization

The capillary-force-assisted transfer has shown application potential for constructing two-dimensional (2D) electronic and optoelectronic devices for the advantage of free of spin coating the organic compound and etching the substrate. Currently, the transfer mechanism remains obscure. The capillary adhesion mechanism and capillary invasion separation mechanism were proposed independently and rarely discussed in a comprehensive manner. What is more, the integrity and utilization remain to be improved. Here, we developed the capillary-force-assisted transfer method with high utilization and integrity. Uniformity of water transport was improved by introducing water from the sidewall of the small polydimethylsiloxane (PDMS) stamp driven by capillary force. The transfer integrity rate increased, and the location of the complete samples became predictable. The transfer utilization increased as the limited water transportation minimized the impact on the surrounding WS₂. The monolayer triangle WS₂ crystals from adjacent areas on the sapphire substrate were transferred one after another. Besides, local mechanical exfoliation of the continuous WS₂ thin films was demonstrated, implying that the capillary adhesion is strong enough to break the strong in-plane covalent bond and overcome the van der Waals force between WS₂ and sapphire substrate. Finally, the water transport model between two surfaces with different hydrophobicity combinations was derived on the basis of the Young-Laplace equation. The analysis of water transport between different interfaces reveals how capillary adhesion and capillary invasion work together to achieve capillary force transfer. This study highlights the potential of the capillary-force-assisted transfer as an efficient technique for fabricating van der Waals structures based on two-dimensional atomic crystals, especially periodic structures.

The Hidden Flower in WS2 Flakes: A Combined Nanomechanical and Tip-Enhanced Raman Exploration

We report on tungsten disulfide (WS₂) flakes grown by chemical vapor deposition (CVD), which exhibit a flower-like surface structure above the primary few-layer flake with a triangular shape. The fine structure is only revealed in the mechanical, chemical, and electronic properties of the flake but not in the topography. The origin of this structure is the peculiar one-step growth during the CVD process that permits to control the sulfur concentration at any time. A high concentration of S at the onset of the deposition process leads to a rapid growth of the flake, resulting in tungsten vacancies. Reducing the sulfur concentration toward the end of the growth slows down the reaction and leads to sulfur vacancies. These microscale domains were studied by confocal- and tip-enhanced Raman spectroscopy revealing their chemical composition with high spatial resolution. A strong quenching of the photoluminescence in the tungsten-vacancy domains is observed. Atomic force microscope measurements, performed in intermittent contact mode, force modulation mode (including lateral force mode), and PeakForce quantitative nanomechanics mode, show that the mechanical properties of these domains differ. Within the tungsten-vacancy domains, the adhesion force is reduced, while the friction force increased. Kelvin probe force microscopy measurements show that the electronic properties of the flakes are modulated by these domains. The combined nanomechanical and nanospectroscopy measurements provide detailed insights on the inhomogeneous surface properties of the single WS₂ flake, further highlighting how its multidomain properties can be finely tuned using CVD.

The Magnetic Genome of Two-Dimensional van der Waals Materials

Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

Quantum emitters and detectors based on 2D van der Waals materials

Light plays an essential role in our world, with several technologies relying on it. Photons will also play an important role in the emerging quantum technologies, which are primed to have a transformative effect on our society. The development of single-photon sources and ultra-sensitive photon detectors is crucial. Solid-state emitters are being heavily pursued for developing truly single-photon sources for scalable technology. On the detectors' side, the main challenge lies in inventing sensitive detectors operating at sub-optical frequencies. This review highlights the promising research being conducted for the development of quantum emitters and detectors based on two-dimensional van der Waals (2D-vdW) materials. Several 2D-vdW materials, from canonical graphene to transition metal dichalcogenides and their heterostructures, have generated a lot of excitement due to their tunable emission and detection properties. The recent developments in the creation, fabrication and control of quantum emitters hosted by 2D-vdW materials and their potential applications in integrated photonic devices are discussed. Furthermore, the progress in enhancing the photon-counting potential of 2D material-based detectors, viz. 2D photodetectors, bolometers and superconducting single-photon detectors functioning at various wavelengths is also reported.

3D Hypersound Microscopy of van der Waals Heterostructures

The mechanical properties of the layered crystals in the few layer limit are largely unexplored. We employ a picosecond ultrasonic technique to access the corresponding mechanical parameters. Temporal variation of the reflection coefficient of the Al film that covers hBN/WSe₂/hBN (where hBN is hexagonal boron nitride) heterostructures on a sapphire substrate after the femtosecond laser pulse excitation is carefully measured using an interferometric technique with spatial resolution. The laser pulse generates a broadband sound wave packet propagating perpendicularly to the Al plane and partially reflecting from the heterostructural interfaces. The demonstrated technique allows one to resolve a WSe₂ monolayer embedded in hBN. We apply a multilayered model of the optoacoustical response to evaluate the mechanical parameters, in particular, the rigidity of the interfaces. Mapping of the Fourier spectra of the response visualizes different composition regions and may serve as an acoustic tomography tool. Almost zero phonon dissipation below 150 GHz demonstrates the van der Waals heterostructures' potential for nanoacoustical applications.

Deep Elastic Strain Engineering of 2D Materials and Their Twisted Bilayers

Conventionally, tuning materials' properties can be done through strategies such as alloying, doping, defect engineering, and phase engineering, while in fact mechanical straining can be another effective approach. In particular, elastic strain engineering (ESE), unlike conventional strain engineering mainly based on epitaxial growth, allows for continuous and reversible modulation of material properties by mechanical loading/unloading. The exceptional intrinsic mechanical properties (including elasticity and strength) of two-dimensional (2D) materials make them naturally attractive candidates for potential ESE applications. Here, we demonstrated that using the strain effect to modulate the physical and chemical properties toward novel functional device applications, which could be a general strategy for various 2D materials and their heterostructures. We then show how ultralarge, uniform elastic strain in free-standing 2D monolayers can permit deep elastic strain engineering (DESE), which can result in fundamentally changed electronic and optoelectronic properties for unconventional device applications. In addition to monolayers and van der Waals (vdW) heterostructures, we propose that DESE can be also applied to twisted bilayer graphene and other emerging twisted vdW structures, allowing for unprecedented functional 2D material applications.

Role of tilt grain boundaries on the structural integrity of WSe2 monolayers

Grain boundaries in transition metal dichalcogenides have a profound effect on their characteristics.

Outstanding stretchability and thickness-dependent mechanical properties of 2D HfS2, HfSe2, and hafnium oxide

We experimentally determine the elastic properties of 2D HfS₂ and HfSe₂ - two emerging nano-materials whose moderate energy bandgap and dielectric oxidized layer make them highly attractive for functional electronic and optoelectronic systems. We found that the average Young's moduli of HfS₂ and HfSe₂ nano-drumheads are relatively low (45.3 ± 3.7 GPa for a 12.2 nm thick HfS₂ and 39.3 ± 8.9 GPa for a 13.4 nm thick HfSe₂) and depend on the thickness of the nano-drumhead (increasing with thickness for HfS₂ and decreasing for HfSe₂). Moreover, both materials demonstrate outstanding stretchability (fracture strength and maximal strain of 5.7 ± 0.4 GPa and 12.2-14.3%, respectively, for HfS₂; fracture strength and maximal strain of 4.5 ± 1.4 GPa and 14.0-20.9%, respectively, for HfSe₂), which far exceeds the stretchability of other 2D materials and of polymers that are commonly used in flexible electronic applications. Finally, we describe the controlled oxidation of HfSe₂ using a relatively simple laser treatment, which increased the Young's moduli of the thin oxidized layers to 182.6 ± 54.3 GPa. The extraordinary elastic properties of HfS₂ and HfSe₂, together with their excellent electrical and optoelectrical properties, make these 2D materials highly attractive for use in strain engineering and in various stretchable electronic and optoelectronic applications, such as wearable devices.

Electrically driven strain-induced deterministic single-photon emitters in a van der Waals heterostructure

Quantum confinement in transition metal dichalcogenides (TMDCs) enables the realization of deterministic single-photon emitters. The position and polarization control of single photons have been achieved via local strain engineering using nanostructures. However, most existing TMDC-based emitters are operated by optical pumping, while the emission sites in electrically pumped emitters are uncontrolled. Here, we demonstrate electrically driven single-photon emitters located at the positions where strains are induced by atomic force microscope indentation on a van der Waals heterostructure consisting of graphene, hexagonal boron nitride, and tungsten diselenide. The optical, electrical, and mechanical properties induced by the local strain gradient were systematically analyzed. The emission at the indentation sites exhibits photon antibunching behavior with a g⁽²⁾(0) value of ~0.3, intensity saturation, and a linearly cross-polarized doublet, at 4 kelvin. This robust spatial control of electrically driven single-photon emitters will pave the way for the practical implementation of integrated quantum light sources.

Creating Quantum Emitters in Hexagonal Boron Nitride Deterministically on Chip-Compatible Substrates

Two-dimensional hexagonal boron nitride (hBN) that hosts room-temperature single-photon emitters (SPEs) is promising for quantum information applications. An important step toward the practical application of hBN is the on-demand, position-controlled generation of SPEs. Strategies reported for deterministic creation of hBN SPEs either rely on substrate nanopatterning that is not compatible with integrated photonics or utilize radiation sources that might introduce unpredictable damage or contamination to hBN. Here, we report a radiation- and lithography-free route to deterministically activate hBN SPEs by nanoindentation with atomic force microscopy (AFM). The method applies to hBN flakes on flat silicon dioxide-silicon substrates that can be readily integrated into on-chip photonic devices. The achieved SPE yields are above 30% for multiple indent sizes, and a maximum yield of 36% is demonstrated for indents around 400 nm. Our results mark an important step toward the deterministic creation and integration of hBN SPEs with photonic and plasmonic devices.