1
|
Meng K, Li Z, Chen P, Ma X, Huang J, Li J, Qin F, Qiu C, Zhang Y, Zhang D, Deng Y, Yang Y, Gu G, Hwang HY, Xue QK, Cui Y, Yuan H. Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics. NATURE NANOTECHNOLOGY 2024; 19:932-940. [PMID: 38750167 DOI: 10.1038/s41565-024-01675-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 04/10/2024] [Indexed: 07/04/2024]
Abstract
Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm-2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS2 transistors exhibiting high on/off current ratios over 108, ultralow subthreshold swing of 65 mV dec-1 and ultralow leakage current density of ~10-6 A cm-2. Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing ~167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor-insulator transition at the clean-limit Bi2Sr2CaCu2O8+δ can also be realized through fluoride gating. Our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.
Collapse
Affiliation(s)
- Kui Meng
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zeya Li
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Peng Chen
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xingyue Ma
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jiayi Li
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yilin Zhang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Ding Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Yu Deng
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yurong Yang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Genda Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, USA
| | - Harold Y Hwang
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA
- Department of Applied Physics, Stanford University, Stanford, CA, USA
| | - Qi-Kun Xue
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China.
- Department of Physics, Southern University of Science and Technology, Shenzhen, China.
| | - Yi Cui
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA.
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA.
- Department of Material Science and Engineering, Stanford University, Stanford, CA, USA.
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| |
Collapse
|
2
|
Wu M, Shi J, Sa N, Wu R, Deng T, Yang R, Zhang KHL, Han P, Wang HQ, Kang J. Ferromagnetic Insulating Ground-State Resolved in Mixed Protons and Oxygen Vacancies-Doped La 0.67Sr 0.33CoO 3 Thin Films via Ionic Liquid Gating. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38624095 DOI: 10.1021/acsami.4c00724] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
The realization of ferromagnetic insulating ground state is a critical prerequisite for spintronic applications. By applying electric field-controlled ionic liquid gating (ILG) to stoichiometry La0.67Sr0.33CoO3 thin films, the doping of protons (H+) has been achieved for the first time. Furthermore, a hitherto-unreported ferromagnetic insulating phase with a remarkably high Tc up to 180 K has been observed which can be attributed to the doping of H+ and the formation of oxygen vacancies (VO). The chemical formula of the dual-ion migrated film has been identified as La2/3Sr1/3CoO8/3H2/3 based on combined Co L23-edge absorption spectra and configuration interaction cluster calculations, from which we are able to explain the ferromagnetic ground state in terms of the distinct magnetic moment contributions from Co ions with octahedral (Oh) and tetrahedral (Td) symmetries following antiparallel spin alignments. Further density functional theory calculations have been performed to verify the functionality of H+ as the transfer ion and the origin of the novel ferromagnetic insulating ground state. Our results provide a fundamental understanding of the ILG regulation mechanism and shed light on the manipulating of more functionalities in other correlated compounds through dual-ion manipulation.
Collapse
Affiliation(s)
- Meng Wu
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University, Xiamen 361005, P.R. China
| | - Jueli Shi
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P.R. China
| | - Na Sa
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University, Xiamen 361005, P.R. China
| | - Ruoyu Wu
- Department of Physics, Beijing Key Lab for Metamaterials and Devices, Capital Normal University, Beijing 100048, P.R. China
| | - Tielong Deng
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University, Xiamen 361005, P.R. China
| | - Renqi Yang
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University, Xiamen 361005, P.R. China
| | - Kelvin H L Zhang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P.R. China
| | - Peng Han
- Department of Physics, Beijing Key Lab for Metamaterials and Devices, Capital Normal University, Beijing 100048, P.R. China
| | - Hui-Qiong Wang
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University, Xiamen 361005, P.R. China
| | - Junyong Kang
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University, Xiamen 361005, P.R. China
| |
Collapse
|
3
|
Zhang L, Liu C, Cao H, Erwin AJ, Fong DD, Bhattacharya A, Yu L, Stan L, Zou C, Tirrell MV, Zhou H, Chen W. Redox Gating for Colossal Carrier Modulation and Unique Phase Control. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308871. [PMID: 38183328 DOI: 10.1002/adma.202308871] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 12/18/2023] [Indexed: 01/08/2024]
Abstract
Redox gating, a novel approach distinct from conventional electrolyte gating, combines reversible redox functionalities with common ionic electrolyte moieties to engineer charge transport, enabling power-efficient electronic phase control. This study achieves a colossal sheet carrier density modulation beyond 1016 cm-2, sustainable over thousands of cycles, all within the sub-volt regime for functional oxide thin films. The key advantage of this method lies in the controlled injection of a large quantity of carriers from the electrolyte into the channel material without the deleterious effects associated with traditional electrolyte gating processes such as the production of ionic defects or intercalated species. The redox gating approach offers a simple and practical means of decoupling electrical and structural phase transitions, enabling the isostructural metal-insulator transition and improved device endurance. The versatility of redox gating extends across multiple materials, irrespective of their crystallinity, crystallographic orientation, or carrier type (n- or p-type). This inclusivity encompasses functional heterostructures and low-dimensional quantum materials composed of sustainable elements, highlighting the broad applicability and potential of the technique in electronic devices.
Collapse
Affiliation(s)
- Le Zhang
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Changjiang Liu
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Department of Physics, University at Buffalo, SUNY, Buffalo, NY, 14260, USA
| | - Hui Cao
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, 60439, USA
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Andrew J Erwin
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Dillon D Fong
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Anand Bhattacharya
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Luping Yu
- Department of Chemistry and the James Franck Institute, University of Chicago, Chicago, IL, 60637, USA
| | - Liliana Stan
- Center for Nanoscale Materials, Nanoscience and Technology Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Chongwen Zou
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China
| | - Matthew V Tirrell
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, 60439, USA
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA
| | - Hua Zhou
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Wei Chen
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, 60439, USA
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA
| |
Collapse
|
4
|
Wang Z, Liu Y, Ji C, Wang J. Quantum phase transitions in two-dimensional superconductors: a review on recent experimental progress. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:014502. [PMID: 38086096 DOI: 10.1088/1361-6633/ad14f3] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Accepted: 12/12/2023] [Indexed: 12/30/2023]
Abstract
Superconductor-insulator/metal transition (SMT) as a paradigm of quantum phase transition has been a research highlight over the last three decades. Benefit from recent developments in the fabrication and measurements of two-dimensional (2D) superconducting films and nanodevices, unprecedented quantum phenomena have been revealed in the quantum phase transitions of 2D superconductors. In this review, we introduce the recent progress on quantum phase transitions in 2D superconductors, focusing on the quantum Griffiths singularity (QGS) and anomalous metal state. Characterized by a divergent critical exponent when approaching zero temperature, QGS of SMT is discovered in ultrathin crystalline Ga films and subsequently detected in various 2D superconductors. The universality of QGS indicates the profound influence of quenched disorder on quantum phase transitions. Besides, in a 2D superconducting system, whether a metallic ground state can exist is a long-sought mystery. Early experimental studies indicate an intermediate metallic state in the quantum phase transition of 2D superconductors. Recently, in high-temperature superconducting films with patterned nanopores, a robust anomalous metal state (i.e. quantum metal or Bose metal) has been detected, featured as the saturated resistance in the low temperature regime. Moreover, the charge-2equantum oscillations are observed in nanopatterned films, indicating the bosonic nature of the anomalous metal state and ending the debate on whether bosons can exist as a metal. The evidences of the anomalous metal states have also been reported in crystalline epitaxial thin films and exfoliated nanoflakes, as well as granular composite films. High quality filters are used in these works to exclude the influence of external high frequency noises in ultralow temperature measurements. The observations of QGS and metallic ground states in 2D superconductors not only reveal the prominent role of quantum fluctuations and dissipations but also provide new perspective to explore quantum phase transitions in superconducting systems.
Collapse
Affiliation(s)
- Ziqiao Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Yi Liu
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, People's Republic of China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, People's Republic of China
| | - Chengcheng Ji
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Hefei National Laboratory, Hefei 230088, People's Republic of China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Hefei National Laboratory, Hefei 230088, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| |
Collapse
|
5
|
Rath SP, Thompson D, Goswami S, Goswami S. Many-Body Molecular Interactions in a Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204551. [PMID: 36043246 DOI: 10.1002/adma.202204551] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2022] [Revised: 07/26/2022] [Indexed: 06/15/2023]
Abstract
Electronic transitions in molecular-circuit elements hinge on complex interactions between molecules and ions, offering a multidimensional parameter space to embed, access, and optimize material functionalities for target-specific applications. This opportunity is not cultivated in molecular memristors because their low-temperature charge transport, which is a route to decipher molecular many-body interactions, is unexplored. To address this, robust, temperature-resilient molecular memristors based on a Ru complex of an azo aromatic ligand are designed, and current-voltage sweep measurements from room temperature down to 2 K with different cooling protocols are performed. By freezing out or activating different components of supramolecular dynamics, the local Coulombic interactions between the molecules and counterions that affect the electronic transport can be controlled. Operating conditions are designed where functionalities spanning bipolar, unipolar, nonvolatile, and volatile memristors with sharp as well as gradual analog transitions are captured within a single device. A mathematical design space evolves, thereof comprising 36 tuneable parameters in which all possible steady-state functional variations in a memristor characteristic can be attainable. This enables a deterministic design route to engineer neuromorphic devices with unprecedented control over the transformation characteristics governing their functional flexibility and tunability.
Collapse
Affiliation(s)
- Santi P Rath
- Centre for Nanoscience and Engineering, CeNSE, Indian Institute of Science (IISc), Bangalore, Karnataka, 560012, India
| | - Damien Thompson
- Department of Physics, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Sreebrata Goswami
- Centre for Nanoscience and Engineering, CeNSE, Indian Institute of Science (IISc), Bangalore, Karnataka, 560012, India
| | - Sreetosh Goswami
- Centre for Nanoscience and Engineering, CeNSE, Indian Institute of Science (IISc), Bangalore, Karnataka, 560012, India
| |
Collapse
|
6
|
Ono S. Recent Advanced Applications of Ionic Liquid for Future Iontronics. CHEM REC 2023; 23:e202300045. [PMID: 37098877 DOI: 10.1002/tcr.202300045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Revised: 03/29/2023] [Indexed: 04/27/2023]
Abstract
Recently, electronic devices that make use of a state called the electric double layers (EDL) of ion have opened up a wide range of research opportunities, from novel physical phenomena in solid-state materials to next-generation low-power consumption devices. They are considered to be the future iontronics devices. EDLs behave as nanogap capacitors, resulting the high density of charge carriers is induced at semiconductor/electrolyte by applying only a few volts of the bias voltage. This enables the low-power operation of electronic devices as well as new functional devices. Furthermore, by controlling the motion of ions, ions can be used as semi-permanent charge to form electrets. In this article, we are going to introduce the recent advanced application of iontronics devices as well as energy harvesters making use of ion-based electrets, leading to the future iontronics research.
Collapse
Affiliation(s)
- Shimpei Ono
- Energy Transformation Research Laboratory, Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa, 240-0196, Japan
| |
Collapse
|
7
|
Guo Y, Qiu D, Shao M, Song J, Wang Y, Xu M, Yang C, Li P, Liu H, Xiong J. Modulations in Superconductors: Probes of Underlying Physics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209457. [PMID: 36504310 DOI: 10.1002/adma.202209457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Revised: 11/16/2022] [Indexed: 06/02/2023]
Abstract
The importance of modulations is elevated to an unprecedented level, due to the delicate conditions required to bring out exotic phenomena in quantum materials, such as topological materials, magnetic materials, and superconductors. Recently, state-of-the-art modulation techniques in material science, such as electric-double-layer transistor, piezoelectric-based strain apparatus, angle twisting, and nanofabrication, have been utilized in superconductors. They not only efficiently increase the tuning capability to the broader ranges but also extend the tuning dimensionality to unprecedented degrees of freedom, including quantum fluctuations of competing phases, electronic correlation, and phase coherence essential to global superconductivity. Here, for a comprehensive review, these techniques together with the established modulation methods, such as elemental substitution, annealing, and polarization-induced gating, are contextualized. Depending on the mechanism of each method, the modulations are categorized into stoichiometric manipulation, electrostatic gating, mechanical modulation, and geometrical design. Their recent advances are highlighted by applications in newly discovered superconductors, e.g., nickelates, Kagome metals, and magic-angle graphene. Overall, the review is to provide systematic modulations in emergent superconductors and serve as the coordinate for future investigations, which can stimulate researchers in superconductivity and other fields to perform various modulations toward a thorough understanding of quantum materials.
Collapse
Affiliation(s)
- Yehao Guo
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Mingxin Shao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jingyan Song
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chao Yang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Peng Li
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Haiwen Liu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| |
Collapse
|
8
|
Zhou K, Shang G, Hsu HH, Han ST, Roy VAL, Zhou Y. Emerging 2D Metal Oxides: From Synthesis to Device Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207774. [PMID: 36333890 DOI: 10.1002/adma.202207774] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Revised: 10/26/2022] [Indexed: 05/26/2023]
Abstract
2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.
Collapse
Affiliation(s)
- Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Gang Shang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Hsiao-Hsuan Hsu
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| |
Collapse
|
9
|
Diamantini MC, Trugenberger CA, Chen SZ, Lu YJ, Liang CT, Vinokur VM. Type-III Superconductivity. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206523. [PMID: 36965030 DOI: 10.1002/advs.202206523] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2022] [Revised: 02/19/2023] [Indexed: 05/18/2023]
Abstract
Superconductivity remains one of most fascinating quantum phenomena existing on a macroscopic scale. Its rich phenomenology is usually described by the Ginzburg-Landau (GL) theory in terms of the order parameter, representing the macroscopic wave function of the superconducting condensate. The GL theory addresses one of the prime superconducting properties, screening of the electromagnetic field because it becomes massive within a superconductor, the famous Anderson-Higgs mechanism. Here the authors describe another widely-spread type of superconductivity where the Anderson-Higgs mechanism does not work and must be replaced by the Deser-Jackiw-Templeton topological mass generation and, correspondingly, the GL effective field theory must be replaced by an effective topological gauge theory. These superconductors are inherently inhomogeneous granular superconductors, where electronic granularity is either fundamental or emerging. It is shown that the corresponding superconducting transition is a 3D generalization of the 2D Berezinskii-Kosterlitz-Thouless vortex binding-unbinding transition. The binding-unbinding of the line-like vortices in 3D results in the Vogel-Fulcher-Tamman scaling of the resistance near the superconducting transition. The authors report experimental data fully confirming the VFT behavior of the resistance.
Collapse
Affiliation(s)
- M Cristina Diamantini
- NiPS Laboratory, INFN and Dipartimento di Fisica e Geologia, University of Perugia, via A. Pascoli, Perugia, I-06100, Italy
| | | | - Sheng-Zong Chen
- Department of Physics, National Taiwan University, Taipei, 106, Taiwan
| | - Yu-Jung Lu
- Department of Physics, National Taiwan University, Taipei, 106, Taiwan
- Research Center for Applied Sciences, Academia Sinica, Taipei, 115, Taiwan
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei, 106, Taiwan
- Center for Quantum Science and Engineering, National Taiwan University, Taipei, 106, Taiwan
| | - Valerii M Vinokur
- Terra Quantum AG, Kornhausstrasse 25, St. Gallen, CH-9000, Switzerland
| |
Collapse
|
10
|
Wu J, Bozovic I. Superconductivity in a strange metal. Sci Bull (Beijing) 2023; 68:851-853. [PMID: 37031079 DOI: 10.1016/j.scib.2023.03.038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/29/2023]
|
11
|
Monalisha P, Li S, Jin T, Kumar PSA, Piramanayagam SN. A multilevel electrolyte-gated artificial synapse based on ruthenium-doped cobalt ferrite. NANOTECHNOLOGY 2023; 34:165201. [PMID: 36645906 DOI: 10.1088/1361-6528/acb35a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Accepted: 01/16/2023] [Indexed: 06/17/2023]
Abstract
Synaptic devices that emulate synchronized memory and processing are considered the core components of neuromorphic computing systems for the low-power implementation of artificial intelligence. In this regard, electrolyte-gated transistors (EGTs) have gained much scientific attention, having a similar working mechanism as the biological synapses. Moreover, compared to a traditional solid-state gate dielectric, the liquid dielectric has the key advantage of inducing extremely large modulation of carrier density while overcoming the problem of electric pinholes, that typically occurs when using large-area films gated through ultra-thin solid dielectrics. Herein we demonstrate a three-terminal synaptic transistor based on ruthenium-doped cobalt ferrite (CRFO) thin films by electrolyte gating. In the CRFO-based EGT, we have obtained multilevel non-volatile conductance states for analog computing and high-density storage. Furthermore, the proposed synaptic transistor exhibited essential synaptic behavior, including spike amplitude-dependent plasticity, spike duration-dependent plasticity, long-term potentiation, and long-term depression successfully by applying electrical pulses. This study can motivate the development of advanced neuromorphic devices that leverage simultaneous modulation of electrical and magnetic properties in the same device and show a new direction to synaptic electronics.
Collapse
Affiliation(s)
- P Monalisha
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Shengyao Li
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Tianli Jin
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - P S Anil Kumar
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - S N Piramanayagam
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| |
Collapse
|
12
|
Botana MM, Ramallo MV. A Scenario for the Critical Fluctuations near the Transition of Few-Bilayer Films of High-Temperature Cuprate Superconductors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4368. [PMID: 36558221 PMCID: PMC9781180 DOI: 10.3390/nano12244368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 11/25/2022] [Accepted: 12/03/2022] [Indexed: 06/17/2023]
Abstract
We study the critical fluctuations near the resistive transition of very thin films of high-temperature cuprate superconductors composed of a number N of only a few unit cells of superconducting bilayers. For that, we solve the fluctuation spectrum of a Gaussian-Ginzburg-Landau model for few-bilayers superconductors considering two alternating Josephson interlayer interaction strengths, and we obtain the corresponding paraconductivity above the transition. Then, we extend these calculations to temperatures below the transition through expressions for the Ginzburg number and Kosterlitz-Thouless-like critical region. When compared with previously available data in YBa2Cu3O7-δ few-bilayers systems, with N = 1 to 4, our results seem to provide a plausible scenario for their critical regime.
Collapse
Affiliation(s)
- Martín M. Botana
- Quantum Materials and Photonics Research Group (QMatterPhotonics), Department of Particle Physics, University of Santiago de Compostela, 15782 Santiago de Compostela, Spain
- Instituto de Materiais (iMATUS), University of Santiago de Compostela, 15782 Santiago de Compostela, Spain
| | - Manuel V. Ramallo
- Quantum Materials and Photonics Research Group (QMatterPhotonics), Department of Particle Physics, University of Santiago de Compostela, 15782 Santiago de Compostela, Spain
- Instituto de Materiais (iMATUS), University of Santiago de Compostela, 15782 Santiago de Compostela, Spain
| |
Collapse
|
13
|
Ding D, Qu Z, Han X, Han C, Zhuang Q, Yu XL, Niu R, Wang Z, Li Z, Gan Z, Wu J, Lu J. Multivalley Superconductivity in Monolayer Transition Metal Dichalcogenides. NANO LETTERS 2022; 22:7919-7926. [PMID: 36173038 DOI: 10.1021/acs.nanolett.2c02947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
In transition metal dichalcogenides (TMDs), Ising superconductivity with an antisymmetric spin texture on the Fermi surface has attracted wide interest due to the exotic pairing and topological properties. However, it is not clear whether the Q valley with a giant spin splitting is involved in the superconductivity of heavily doped semiconducting 2H-TMDs. Here by taking advantage of a high-quality monolayer WS2 on hexagonal boron nitride flakes, we report an ionic-gating induced superconducting dome with a record high critical temperature of ∼6 K, accompanied by an emergent nonlinear Hall effect. The nonlinearity indicates the development of an additional high-mobility channel, which (corroborated by first principle calculations) can be ascribed to the population of Q valleys. Thus, multivalley population at K and Q is suggested to be a prerequisite for developing superconductivity. The involvement of Q valleys also provides insights to the spin textured Fermi surface of Ising superconductivity in the large family of transition metal dichalcogenides.
Collapse
Affiliation(s)
- Dongdong Ding
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zhuangzhuang Qu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Xiangyan Han
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Chunrui Han
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Quan Zhuang
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen 518055, China
- Inner Mongolia Key Laboratory of Carbon Nanomaterials, Nano Innovation Institute (NII), Inner Mongolia Minzu University, Tongliao 028000, China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen 518055, China
- International Quantum Academy, Shenzhen 518048, China
| | - Ruirui Niu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zhiyu Wang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zhuoxian Li
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zizhao Gan
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Jiansheng Wu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen 518055, China
- International Quantum Academy, Shenzhen 518048, China
| | - Jianming Lu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| |
Collapse
|
14
|
Lei B, Ma D, Liu S, Sun Z, Shi M, Zhuo W, Yu F, Gu G, Wang Z, Chen X. Manipulating high-temperature superconductivity by oxygen doping in Bi 2Sr 2CaCu 2O 8+δ thin flakes. Natl Sci Rev 2022; 9:nwac089. [PMID: 36415315 PMCID: PMC9671661 DOI: 10.1093/nsr/nwac089] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2021] [Revised: 01/17/2022] [Accepted: 02/15/2022] [Indexed: 09/08/2024] Open
Abstract
Harnessing the fascinating properties of correlated oxides requires precise control of their carrier density. Compared to other methods, oxygen doping provides an effective and more direct way to tune the electronic properties of correlated oxides. Although several approaches, such as thermal annealing and oxygen migration, have been introduced to change the oxygen content, a continuous and reversible solution that can be integrated with modern electronic technology is much in demand. Here, we report a novel ionic field-effect transistor using solid Gd-doped CeO2 as the gate dielectric, which shows a remarkable carrier-density-tuning ability via electric-field-controlled oxygen concentration at room temperature. In Bi2Sr2CaCu2O8+δ (Bi-2212) thin flakes, we achieve a reversible superconductor-insulator transition by driving oxygen ions in and out of the samples with electric fields, and map out the phase diagram all the way from the insulating regime to the over-doped superconducting regime by continuously changing the oxygen doping level. Scaling analysis indicates that the reversible superconductor-insulator transition for the Bi-2212 thin flakes follows the theoretical description of a two-dimensional quantum phase transition. Our work provides a route for realizing electric-field control of phase transition in correlated oxides. Moreover, the configuration of this type of transistor makes heterostructure/interface engineering possible, thus having the potential to serve as the next-generation all-solid-state field-effect transistor.
Collapse
Affiliation(s)
- Bin Lei
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
- CASCenter for Excellence in Quantum Information and Quantum Physics, Hefei 230026, China
| | - Donghui Ma
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Shihao Liu
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zeliang Sun
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Mengzhu Shi
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Weizhuang Zhuo
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Fanghang Yu
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Genda Gu
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973-5000, USA
| | - Zhenyu Wang
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
- CASCenter for Excellence in Quantum Information and Quantum Physics, Hefei 230026, China
| | - Xianhui Chen
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
- CASCenter for Excellence in Quantum Information and Quantum Physics, Hefei 230026, China
- CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| |
Collapse
|
15
|
Rajapitamahuni AK, Manjeshwar AK, Kumar A, Datta A, Ranga P, Thoutam LR, Krishnamoorthy S, Singisetti U, Jalan B. Plasmon-Phonon Coupling in Electrostatically Gated β-Ga 2O 3 Films with Mobility Exceeding 200 cm 2 V -1 s -1. ACS NANO 2022; 16:8812-8819. [PMID: 35436095 DOI: 10.1021/acsnano.1c09535] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Monoclinic β-Ga2O3, an ultra-wide bandgap semiconductor, has seen enormous activity in recent years. However, the fundamental study of the plasmon-phonon coupling that dictates electron transport properties has not been possible due to the difficulty in achieving higher carrier density (without introducing chemical disorder). Here, we report a highly reversible, electrostatic doping of β-Ga2O3 films with tunable carrier densities using ion-gel-gated electric double-layer transistor configuration. Combining temperature-dependent Hall effect measurements, transport modeling, and comprehensive mobility calculations using ab initio based electron-phonon scattering rates, we demonstrate an increase in the room-temperature mobility to 201 cm2 V-1 s-1 followed by a surprising decrease with an increasing carrier density due to the plasmon-phonon coupling. The modeling and experimental data further reveal an important "antiscreening" (of electron-phonon interaction) effect arising from dynamic screening from the hybrid plasmon-phonon modes. Our calculations show that a significantly higher room-temperature mobility of 300 cm2 V-1 s-1 is possible if high electron densities (>1020 cm-3) with plasmon energies surpassing the highest energy LO mode can be realized. As Ga2O3 and other polar semiconductors play an important role in several device applications, the fundamental understanding of the plasmon-phonon coupling can lead to the enhancement of mobility by harnessing the dynamic screening of the electron-phonon interactions.
Collapse
Affiliation(s)
- Anil Kumar Rajapitamahuni
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Anusha Kamath Manjeshwar
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Avinash Kumar
- Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260, United States
| | - Animesh Datta
- Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260, United States
| | - Praneeth Ranga
- Department of Electrical and Computers Engineering, The University of Utah, Salt Lake City, Utah 84112, United States
| | - Laxman Raju Thoutam
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Sriram Krishnamoorthy
- Department of Electrical and Computers Engineering, The University of Utah, Salt Lake City, Utah 84112, United States
- Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States
| | - Uttam Singisetti
- Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260, United States
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| |
Collapse
|
16
|
Quadrupling the stored charge by extending the accessible density of states. Chem 2022. [DOI: 10.1016/j.chempr.2022.05.004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
|
17
|
Shimizu S, Kishi T, Ogane G, Tokiwa K, Ono S. Electrical mapping of thermoelectric power factor in WO 3 thin film. Sci Rep 2022; 12:7202. [PMID: 35504899 PMCID: PMC9065146 DOI: 10.1038/s41598-022-10908-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/06/2022] [Accepted: 04/08/2022] [Indexed: 11/09/2022] Open
Abstract
With growing environmental awareness and considerable research investment in energy saving, the concept of energy harvesting has become a central topic in the field of materials science. The thermoelectric energy conversion, which is a classic physical phenomenon, has emerged as an indispensable thermal management technology. In addition to conventional experimental investigations of thermoelectric materials, seeking promising materials or structures using computer-based approaches such as machine learning has been considered to accelerate research in recent years. However, the tremendous experimental efforts required to evaluate materials may hinder us from reaping the benefits of the fast-developing computer technology. In this study, an electrical mapping of the thermoelectric power factor is performed in a wide temperature-carrier density regime. An ionic gating technique is applied to an oxide semiconductor WO3, systematically controlling the carrier density to induce a transition from an insulating to a metallic state. Upon electrically scanning the thermoelectric properties, it is demonstrated that the thermoelectric performance of WO3 is optimized at a highly degenerate metallic state. This approach is convenient and applicable to a variety of materials, thus prompting the development of novel functional materials with desirable thermoelectric properties.
Collapse
Affiliation(s)
- Sunao Shimizu
- Materials Science Division, Central Research Institute of Electric Power Industry (CRIEPI), Kanagawa, 240-0196, Japan.
| | - Tomoya Kishi
- Faculty of Advanced Engineering, Tokyo University of Science, Tokyo, 125-8585, Japan
| | - Goki Ogane
- Faculty of Advanced Engineering, Tokyo University of Science, Tokyo, 125-8585, Japan
| | - Kazuyasu Tokiwa
- Faculty of Advanced Engineering, Tokyo University of Science, Tokyo, 125-8585, Japan.
| | - Shimpei Ono
- Materials Science Division, Central Research Institute of Electric Power Industry (CRIEPI), Kanagawa, 240-0196, Japan
| |
Collapse
|
18
|
Signatures of a strange metal in a bosonic system. Nature 2022; 601:205-210. [PMID: 35022592 DOI: 10.1038/s41586-021-04239-y] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2021] [Accepted: 11/09/2021] [Indexed: 11/08/2022]
Abstract
Fermi liquid theory forms the basis for our understanding of the majority of metals: their resistivity arises from the scattering of well defined quasiparticles at a rate where, in the low-temperature limit, the inverse of the characteristic time scale is proportional to the square of the temperature. However, various quantum materials1-15-notably high-temperature superconductors1-10-exhibit strange-metallic behaviour with a linear scattering rate in temperature, deviating from this central paradigm. Here we show the unexpected signatures of strange metallicity in a bosonic system for which the quasiparticle concept does not apply. Our nanopatterned YBa2Cu3O7-δ (YBCO) film arrays reveal linear-in-temperature and linear-in-magnetic field resistance over extended temperature and magnetic field ranges. Notably, below the onset temperature at which Cooper pairs form, the low-field magnetoresistance oscillates with a period dictated by the superconducting flux quantum, h/2e (e, electron charge; h, Planck's constant). Simultaneously, the Hall coefficient drops and vanishes within the measurement resolution with decreasing temperature, indicating that Cooper pairs instead of single electrons dominate the transport process. Moreover, the characteristic time scale τ in this bosonic system follows a scale-invariant relation without an intrinsic energy scale: ħ/τ ≈ a(kBT + γμBB), where ħ is the reduced Planck's constant, a is of order unity7,8,11,12, kB is Boltzmann's constant, T is temperature, μB is the Bohr magneton and γ ≈ 2. By extending the reach of strange-metal phenomenology to a bosonic system, our results suggest that there is a fundamental principle governing their transport that transcends particle statistics.
Collapse
|
19
|
Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide. Nat Commun 2021; 12:7070. [PMID: 34862386 PMCID: PMC8642393 DOI: 10.1038/s41467-021-27327-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2021] [Accepted: 11/12/2021] [Indexed: 11/09/2022] Open
Abstract
The metal-insulator transition (MIT), a fascinating phenomenon occurring in some strongly correlated materials, is of central interest in modern condensed-matter physics. Controlling the MIT by external stimuli is a key technological goal for applications in future electronic devices. However, the standard control by means of the field effect, which works extremely well for semiconductor transistors, faces severe difficulties when applied to the MIT. Hence, a radically different approach is needed. Here, we report an MIT induced by resonant tunneling (RT) in double quantum well (QW) structures of strongly correlated oxides. In our structures, two layers of the strongly correlated conductive oxide SrVO3 (SVO) sandwich a barrier layer of the band insulator SrTiO3. The top QW is a marginal Mott-insulating SVO layer, while the bottom QW is a metallic SVO layer. Angle-resolved photoemission spectroscopy experiments reveal that the top QW layer becomes metallized when the thickness of the tunneling barrier layer is reduced. An analysis based on band structure calculations indicates that RT between the quantized states of the double QW induces the MIT. Our work opens avenues for realizing the Mott-transistor based on the wave-function engineering of strongly correlated electrons.
Collapse
|
20
|
Geometric frustration produces long-sought Bose metal phase of quantum matter. Proc Natl Acad Sci U S A 2021; 118:2100545118. [PMID: 34750250 DOI: 10.1073/pnas.2100545118] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 09/27/2021] [Indexed: 11/18/2022] Open
Abstract
Two of the most prominent phases of bosonic matter are the superfluid with perfect flow and the insulator with no flow. A now decades-old mystery unexpectedly arose when experimental observations indicated that bosons could organize into the formation of an entirely different intervening third phase: the Bose metal with dissipative flow. The most viable theory for such a Bose metal to date invokes the use of the extrinsic property of impurity-based disorder; however, a generic intrinsic quantum Bose metal state is still lacking. We propose a universal homogeneous theory for a Bose metal in which geometric frustration confines the essential quantum coherence to a lower dimension. The result is a gapless insulator characterized by dissipative flow that vanishes in the low-energy limit. This failed insulator exemplifies a frustration-dominated regime that is only enhanced by additional scattering sources at low energy and therefore produces a Bose metal that thrives under realistic experimental conditions.
Collapse
|
21
|
Wang S, Choubey P, Chong YX, Chen W, Ren W, Eisaki H, Uchida S, Hirschfeld PJ, Davis JCS. Scattering interference signature of a pair density wave state in the cuprate pseudogap phase. Nat Commun 2021; 12:6087. [PMID: 34667154 PMCID: PMC8526682 DOI: 10.1038/s41467-021-26028-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2021] [Accepted: 09/09/2021] [Indexed: 11/21/2022] Open
Abstract
An unidentified quantum fluid designated the pseudogap (PG) phase is produced by electron-density depletion in the CuO2 antiferromagnetic insulator. Current theories suggest that the PG phase may be a pair density wave (PDW) state characterized by a spatially modulating density of electron pairs. Such a state should exhibit a periodically modulating energy gap [Formula: see text] in real-space, and a characteristic quasiparticle scattering interference (QPI) signature [Formula: see text] in wavevector space. By studying strongly underdoped Bi2Sr2CaDyCu2O8 at hole-density ~0.08 in the superconductive phase, we detect the 8a0-periodic [Formula: see text] modulations signifying a PDW coexisting with superconductivity. Then, by visualizing the temperature dependence of this electronic structure from the superconducting into the pseudogap phase, we find the evolution of the scattering interference signature [Formula: see text] that is predicted specifically for the temperature dependence of an 8a0-periodic PDW. These observations are consistent with theory for the transition from a PDW state coexisting with d-wave superconductivity to a pure PDW state in the Bi2Sr2CaDyCu2O8 pseudogap phase.
Collapse
Affiliation(s)
- Shuqiu Wang
- Clarendon Laboratory, University of Oxford, Oxford, UK
| | - Peayush Choubey
- Institut für Theoretische Physik III, Ruhr-Universität Bochum, Bochum, Germany
- Department of Physics, Indian Institute of Technology (Indian School of Mines), Dhanbad, Jharkhand, India
| | - Yi Xue Chong
- LASSP, Department of Physics, Cornell University, Ithaca, NY, USA
| | - Weijiong Chen
- Clarendon Laboratory, University of Oxford, Oxford, UK
| | - Wangping Ren
- Clarendon Laboratory, University of Oxford, Oxford, UK
| | - H Eisaki
- Institute of Advanced Industrial Science and Tech., Tsukuba, Ibaraki, Japan
| | - S Uchida
- Institute of Advanced Industrial Science and Tech., Tsukuba, Ibaraki, Japan
| | | | - J C Séamus Davis
- Clarendon Laboratory, University of Oxford, Oxford, UK.
- LASSP, Department of Physics, Cornell University, Ithaca, NY, USA.
- Department of Physics, University College Cork, Cork, Ireland.
- Max-Planck Institute for Chemical Physics of Solids, Dresden, Germany.
| |
Collapse
|
22
|
Qin M, Han X, Ding D, Niu R, Qu Z, Wang Z, Liao ZM, Gan Z, Huang Y, Han C, Lu J, Ye J. Light Controllable Electronic Phase Transition in Ionic Liquid Gated Monolayer Transition Metal Dichalcogenides. NANO LETTERS 2021; 21:6800-6806. [PMID: 34369798 DOI: 10.1021/acs.nanolett.1c01467] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Ionic liquid gating has proved to be effective in inducing emergent quantum phenomena such as superconductivity, ferromagnetism, and topological states. The electrostatic doping at two-dimensional interfaces relies on ionic motion, which thus is operated at sufficiently high temperature. Here, we report the in situ tuning of quantum phases by shining light on an ionic liquid-gated interface at cryogenic temperatures. The light illumination enables flexible switching of the quantum transition in monolayer WS2 from an insulator to a superconductor. In contrast to the prevailing picture of photoinduced carriers, we find that in the presence of a strong interfacial electric field conducting electrons could escape from the surface confinement by absorbing photons, mimicking the field emission. Such an optical tuning tool in conjunction with ionic liquid gating greatly facilitates continuous modulation of carrier densities and hence electronic phases, which would help to unveil novel quantum phenomena and device functionality in various materials.
Collapse
Affiliation(s)
- Maosen Qin
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Xiangyan Han
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Dongdong Ding
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Ruirui Niu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zhuangzhuang Qu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zhiyu Wang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zhi-Min Liao
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
- Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, Jiangsu 226010 China
| | - Zizhao Gan
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Yuan Huang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
| | - Chunrui Han
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Jianming Lu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Jianting Ye
- Device Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Groningen 9746AG, The Netherlands
| |
Collapse
|
23
|
Grzelak A, Lorenzana J, Grochala W. Separation-Controlled Redox Reactions. Angew Chem Int Ed Engl 2021; 60:13892-13895. [PMID: 33847034 DOI: 10.1002/anie.202103886] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/18/2021] [Indexed: 11/05/2022]
Abstract
In the era of molecular devices and nanotechnology, precise control over electron-transfer processes is strongly desired. However, redox reactions are usually characterized by reaction equilibrium constants strongly departing from unity. This leads to strong favoring of either reactants or products and does not permit subtle control of transferred charge (doping). Here we propose, based on theoretical studies for periodic systems, how charge transfer between reactants could be finely manipulated in the epitaxially grown system composed of extremely strong oxidizer, reducing agent, and an inert separator-the key factor of control.
Collapse
Affiliation(s)
- Adam Grzelak
- Center of New Technologies, University of Warsaw, Zwirki i Wigury 93, 02-089, Warsaw, Poland
| | - José Lorenzana
- Institute for Complex Systems-CNR, and Physics Department, University of Rome La Sapienza, 00185, Rome, Italy
| | - Wojciech Grochala
- Center of New Technologies, University of Warsaw, Zwirki i Wigury 93, 02-089, Warsaw, Poland
| |
Collapse
|
24
|
Mariano AL, Poloni R. Electric field-induced oxygen vacancies in YBa 2Cu 3O 7. J Chem Phys 2021; 154:224703. [PMID: 34241196 DOI: 10.1063/5.0048597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
The microscopic doping mechanism behind the superconductor-to-insulator transition of a thin film of YBa2Cu3O7 was recently identified as due to the migration of O atoms from the CuO chains of the film. Here, we employ density-functional theory calculations to study the evolution of the electronic structure of a slab of YBa2Cu3O7 in the presence of oxygen vacancies under the influence of an external electric field. We find that, under massive electric fields, isolated O atoms are pulled out of the surface consisting of CuO chains. As vacancies accumulate at the surface, a configuration with vacancies located in the chains inside the slab becomes energetically preferred, thus providing a driving force for O migration toward the surface. Regardless of the defect configuration studied, the electric field is always fully screened near the surface, thus negligibly affecting diffusion barriers across the film.
Collapse
Affiliation(s)
- A Lorenzo Mariano
- University Grenoble Alpes, CNRS, Grenoble-INP, SIMaP, 38000 Grenoble, France
| | - Roberta Poloni
- University Grenoble Alpes, CNRS, Grenoble-INP, SIMaP, 38000 Grenoble, France
| |
Collapse
|
25
|
Grzelak A, Lorenzana J, Grochala W. Separation‐Controlled Redox Reactions. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202103886] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Adam Grzelak
- Center of New Technologies University of Warsaw Zwirki i Wigury 93 02-089 Warsaw Poland
| | - José Lorenzana
- Institute for Complex Systems-CNR, and Physics Department University of Rome La Sapienza 00185 Rome Italy
| | - Wojciech Grochala
- Center of New Technologies University of Warsaw Zwirki i Wigury 93 02-089 Warsaw Poland
| |
Collapse
|
26
|
Abstract
Abstract
Ionic gating is a very popular tool to investigate and control the electric charge transport and electronic ground state in a wide variety of different materials. This is due to its capability to induce large modulations of the surface charge density by means of the electric-double-layer field-effect transistor (EDL-FET) architecture, and has been proven to be capable of tuning even the properties of metallic systems. In this short review, I summarize the main results which have been achieved so far in controlling the superconducting (SC) properties of thin films of conventional metallic superconductors by means of the ionic gating technique. I discuss how the gate-induced charge doping, despite being confined to a thin surface layer by electrostatic screening, results in a long-range ‘bulk’ modulation of the SC properties by the coherent nature of the SC condensate, as evidenced by the observation of suppressions in the critical temperature of films much thicker than the electrostatic screening length, and by the pronounced thickness-dependence of their magnitude. I review how this behavior can be modelled in terms of proximity effect between the charge-doped surface layer and the unperturbed bulk with different degrees of approximation, and how first-principles calculations have been employed to determine the origin of an anomalous increase in the electrostatic screening length at ultrahigh electric fields, thus fully confirming the validity of the proximity effect model. Finally, I discuss a general framework—based on the combination of ab-initio Density Functional Theory and the Migdal-Eliashberg theory of superconductivity—by which the properties of any gated thin film of a conventional metallic superconductor can be determined purely from first principles.
Collapse
|
27
|
Chen Z, Liu Y, Zhang H, Liu Z, Tian H, Sun Y, Zhang M, Zhou Y, Sun J, Xie Y. Electric field control of superconductivity at the LaAlO 3/KTaO 3(111) interface. Science 2021; 372:721-724. [PMID: 33986177 DOI: 10.1126/science.abb3848] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2020] [Accepted: 04/02/2021] [Indexed: 11/02/2022]
Abstract
The oxide interface between LaAlO3 and KTaO3(111) can harbor a superconducting state. We report that by applying a gate voltage (V G) across KTaO3, the interface can be continuously tuned from superconducting into insulating states, yielding a dome-shaped T c-V G dependence, where T c is the transition temperature. The electric gating has only a minor effect on carrier density but a strong one on mobility. We interpret the tuning of mobility in terms of change in the spatial profile of the carriers in the interface and hence, effective disorder. As the temperature is decreased, the resistance saturates at the lowest temperature on both superconducting and insulating sides, suggesting the emergence of a quantum metallic state associated with a failed superconductor and/or fragile insulator.
Collapse
Affiliation(s)
- Zheng Chen
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yuan Liu
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Hui Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhongran Liu
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - He Tian
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yanqiu Sun
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Meng Zhang
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yi Zhou
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.,Kavli Institute for Theoretical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.,School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yanwu Xie
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China. .,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| |
Collapse
|
28
|
Superconductor-insulator transition in space charge doped one unit cell Bi 2.1Sr 1.9CaCu 2O 8+x. Nat Commun 2021; 12:2926. [PMID: 34006876 PMCID: PMC8131387 DOI: 10.1038/s41467-021-23183-z] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/11/2020] [Accepted: 04/16/2021] [Indexed: 11/08/2022] Open
Abstract
The superconductor-insulator transition in two dimensions is a prototype continuous quantum phase transition at absolute zero, driven by a parameter other than temperature. Here we reveal this transition in one unit-cell Bi2.1Sr1.9CaCu2O8+x by space charge doping, a field effect electrostatic doping technique. We determine the related critical parameters and develop a reliable way to estimate doping in the nonsuperconducting region, a crucial and central problem in these materials. Finite-size scaling analysis yields a critical doping of 0.057 holes/Cu, a critical resistance of ~6.85 kΩ and a scaling exponent product νz ~ 1.57. These results, together with earlier work in other materials, provide a coherent picture of the superconductor-insulator transition and its bosonic nature in the underdoped regime of emerging superconductivity in high critical temperature superconductors. Previous work on critical scaling at the superconductor-to-insulator transition has shown variations across different materials. Here, the authors use a space charge doping technique to tune the transition in a single layer cuprate sample and present evidence of the universal scaling behaviour.
Collapse
|
29
|
Qiu D, Gong C, Wang S, Zhang M, Yang C, Wang X, Xiong J. Recent Advances in 2D Superconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006124. [PMID: 33768653 DOI: 10.1002/adma.202006124] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2020] [Revised: 10/22/2020] [Indexed: 06/12/2023]
Abstract
The emergence of superconductivity in 2D materials has attracted much attention and there has been rapid development in recent years because of their fruitful physical properties, such as high transition temperature (Tc ), continuous phase transition, and enhanced parallel critical magnetic field (Bc ). Tremendous efforts have been devoted to exploring different physical parameters to figure out the mechanisms behind the unexpected superconductivity phenomena, including adjusting the thickness of samples, fabricating various heterostructures, tuning the carrier density by electric field and chemical doping, and so on. Here, different types of 2D superconductivity with their unique characteristics are introduced, including the conventional Bardeen-Cooper-Schrieffer superconductivity in ultrathin films, high-Tc superconductivity in Fe-based and Cu-based 2D superconductors, unconventional superconductivity in newly discovered twist-angle bilayer graphene, superconductivity with enhanced Bc , and topological superconductivity. A perspective toward this field is then proposed based on academic knowledge from the recently reported literature. The aim is to provide researchers with a clear and comprehensive understanding about the newly developed 2D superconductivity and promote the development of this field much further.
Collapse
Affiliation(s)
- Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chuanhui Gong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - SiShuang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Miao Zhang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chao Yang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| |
Collapse
|
30
|
Signatures of two-dimensional superconductivity emerging within a three-dimensional host superconductor. Proc Natl Acad Sci U S A 2021; 118:2017810118. [PMID: 33846248 DOI: 10.1073/pnas.2017810118] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Spatial disorder has been shown to drive two-dimensional (2D) superconductors to an insulating phase through a superconductor-insulator transition (SIT). Numerical calculations predict that with increasing disorder, emergent electronic granularity is expected in these materials-a phenomenon where superconducting (SC) domains on the scale of the material's coherence length are embedded in an insulating matrix and coherently coupled by Josephson tunneling. Here, we present spatially resolved scanning tunneling spectroscopy (STS) measurements of the three-dimensional (3D) superconductor BaPb1-x Bi x O3 (BPBO), which surprisingly demonstrate three key signatures of emergent electronic granularity, having only been previously conjectured and observed in 2D thin-film systems. These signatures include the observation of emergent SC domains on the scale of the coherence length, finite energy gap over all space, and strong enhancement of spatial anticorrelation between pairing amplitude and gap magnitude as the SIT is approached. These observations are suggestive of 2D SC behavior embedded within a conventional 3D s-wave host, an intriguing but still unexplained interdimensional phenomenon, which has been hinted at by previous experiments in which critical scaling exponents in the vicinity of a putative 3D quantum phase transition are consistent only with dimensionality d = 2.
Collapse
|
31
|
Saranin DS, Mahmoodpoor A, Voroshilov PM, Simovski CR, Zakhidov AA. Ionically Gated Small-Molecule OPV: Interfacial Doping of Charge Collector and Transport Layer. ACS APPLIED MATERIALS & INTERFACES 2021; 13:8606-8619. [PMID: 33588526 DOI: 10.1021/acsami.0c17865] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We demonstrate an improvement in the performance of organic photovoltaic (OPV) systems based on small molecules by ionic gating via controlled reversible n-doping of multi-wall carbon nanotubes (MWCNTs) coated on fullerene electron transport layers (ETLs): C60 and C70. Such electric double-layer charging (EDLC) doping, achieved by ionic liquid (IL) charging, allows tuning of the electronic concentration in MWCNTs and the fullerene planar acceptor layers, increasing it by orders of magnitude. This leads to the decrease of the series and increase of the shunt resistances of OPVs and allows use of thick (up to 200 nm) ETLs, increasing the durability of OPVs. Two stages of OPV enhancement are described upon the increase of gating bias Vg: at small (or even zero) Vg, the extended interface of ILs and porous transparent MWCNTs is charged by gating, and the fullerene charge collector is significantly improved, becoming an ohmic contact. This changes the S-shaped J-V curve via improving the electron collection by an n-doped MWCNT cathode with an ohmic interfacial contact. The J-V curves further improve at higher gating bias Vg due to the increase of the Fermi level and decrease of the MWCNT work function. At the next qualitative stage, the acceptor fullerene layer becomes n-doped by electron injection from MWCNTs while ions of ILs penetrate into the fullerene. At this step, the internal built-in field is created within OPV, which helps in exciton dissociation and charge separation/transport, increasing further the Jsc and the fill factor. The ionic gating concept demonstrated here for most simple classical planar small-molecule OPV cells can be potentially applied to more complex highly efficient hybrid devices, such as perovskite photovoltaic with an ETL or a hole transport layer, providing a new way to tune their properties via controllable and reversible interfacial doping of charge collectors and transport layers.
Collapse
Affiliation(s)
- Danila S Saranin
- National University of Science and Technology MISiS, Moscow 119049, Russia
| | | | | | - Constantin R Simovski
- ITMO University, Kronverkskiy pr. 49, St. Petersburg 197101, Russia
- School of Electrical Engineering, Department of Electronics and Nanoengineering, Aalto University, P.O. Box 15500, Aalto 00076, Finland
| | - Anvar A Zakhidov
- ITMO University, Kronverkskiy pr. 49, St. Petersburg 197101, Russia
- Physics Department and The NanoTech Institute, The University of Texas at Dallas, Richardson 75080, United States
| |
Collapse
|
32
|
Maeda A. Volatile and non-volatile superconductivity in cuprate by ionic liquid gating opens novel roads for superconductivity research. Sci Bull (Beijing) 2021; 66:1-2. [PMID: 36654305 DOI: 10.1016/j.scib.2020.10.007] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Affiliation(s)
- Atsutaka Maeda
- Department of Basic Sciences, University of Tokyo, Tokyo 153-8902, Japan.
| |
Collapse
|
33
|
A selective control of volatile and non-volatile superconductivity in an insulating copper oxide via ionic liquid gating. Sci Bull (Beijing) 2020; 65:1607-1613. [PMID: 36659036 DOI: 10.1016/j.scib.2020.05.013] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2019] [Revised: 04/24/2020] [Accepted: 05/14/2020] [Indexed: 01/21/2023]
Abstract
Manipulating the superconducting states of high transition temperature (high-Tc) cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconductivity is achieved in pristine insulating Pr2CuO4±δ (PCO) films, based on two distinct mechanisms. Firstly, with positive electric fields, the film can be reversibly switched between superconducting and non-superconducting states, attributed to the carrier doping effect. Secondly, the film becomes more resistive by applying negative bias voltage up to - 4 V, but strikingly, a non-volatile superconductivity is achieved once the gate voltage is removed. Such phenomenon represents a distinctive route of manipulating superconductivity in PCO, resulting from the doping healing of oxygen vacancies in copper-oxygen planes as unravelled by high-resolution scanning transmission electron microscope and in situ X-ray diffraction experiments. The effective manipulation of volatile/non-volatile superconductivity in the same parent cuprate brings more functionalities to superconducting electronics, as well as supplies flexible samples for investigating the nature of quantum phase transitions in high-Tc superconductors.
Collapse
|
34
|
Song D, Xue D, Zeng S, Li C, Venkatesan T, Ariando A, Pennycook SJ. Atomic Origin of Interface-Dependent Oxygen Migration by Electrochemical Gating at the LaAlO 3-SrTiO 3 Heterointerface. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2000729. [PMID: 32775157 PMCID: PMC7404156 DOI: 10.1002/advs.202000729] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/26/2020] [Revised: 05/30/2020] [Indexed: 06/11/2023]
Abstract
Electrical control of material properties based on ionic liquids (IL) has seen great development and emerging applications in the field of functional oxides, mainly understood by the electrostatic and electrochemical gating mechanisms. Compared to the fast, flexible, and reproducible electrostatic gating, electrochemical gating is less controllable owing to the complex behaviors of ion migration. Here, the interface-dependent oxygen migration by electrochemical gating is resolved at the atomic scale in the LaAlO3-SrTiO3 system through ex situ IL gating experiments and on-site atomic-resolution characterization. The difference between interface structures leads to the controllable electrochemical oxygen migration by filling oxygen vacancies. The findings not only provide an atomic-scale insight into the origin of interface-dependent electrochemical gating but also demonstrate an effective way of engineering interface structure to control the electrochemical gating.
Collapse
Affiliation(s)
- Dongsheng Song
- Department of Materials Science and EngineeringNational University of SingaporeSingapore117575Singapore
- NUSNNI‐NanocoreNational University of SingaporeSingapore117411Singapore
| | - Deqing Xue
- Department of Materials Science and EngineeringNational University of SingaporeSingapore117575Singapore
| | - Shengwei Zeng
- NUSNNI‐NanocoreNational University of SingaporeSingapore117411Singapore
- Department of PhysicsNational University of SingaporeSingapore117542Singapore
| | - Changjian Li
- Department of Materials Science and EngineeringNational University of SingaporeSingapore117575Singapore
- NUSNNI‐NanocoreNational University of SingaporeSingapore117411Singapore
| | - Thirumalai Venkatesan
- Department of Materials Science and EngineeringNational University of SingaporeSingapore117575Singapore
- NUSNNI‐NanocoreNational University of SingaporeSingapore117411Singapore
- Department of PhysicsNational University of SingaporeSingapore117542Singapore
| | - Ariando Ariando
- NUSNNI‐NanocoreNational University of SingaporeSingapore117411Singapore
- Department of PhysicsNational University of SingaporeSingapore117542Singapore
| | - Stephen J. Pennycook
- Department of Materials Science and EngineeringNational University of SingaporeSingapore117575Singapore
- NUSNNI‐NanocoreNational University of SingaporeSingapore117411Singapore
| |
Collapse
|
35
|
Yin R, Ma L, Wang Z, Ma C, Chen X, Wang B. Reversible Superconductor-Insulator Transition in (Li, Fe)OHFeSe Flakes Visualized by Gate-Tunable Scanning Tunneling Spectroscopy. ACS NANO 2020; 14:7513-7519. [PMID: 32510920 DOI: 10.1021/acsnano.0c03289] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Electric field control of charge carrier density provides a key in situ technology to continuously tune the ground states and map out the phase diagram of correlated electron systems in one device. This technique is highly expected to be combined with the modern state-of-the art spectroscopic probes, such as angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy (STM/S), to efficiently address these states and the underlying physics. However, it is extremely difficult and not successful so far, mainly because the fabrication process of such devices makes them prohibitive for surface probes. Here, by using a solid Li-ion conductor (SIC) as gate dielectric, we have successfully developed gate-tunable STM/S and visualized the superconductor-insulator transition (SIT) in a thin flake of single crystal (Li, Fe)OHFeSe at the nanoscale. The gate-controlled Li-ion injection first enhances the superconductivity and then drives the flake into an inhomogeneous insulating state, where superconductivity is totally suppressed. This process can be reversed by applying an opposite gate voltage. Importantly, the atomically resolved images allow us to identify the critical role that the injected Li ions play in the tuning process. Our results not only provide clear evidence of the microscopic mechanism of the tunable superconductivity and SIT in the SIC-based (Li, Fe)OHFeSe devices, but also establish SIC-gating STM as a powerful tool for investigating the complicated phase diagram of correlated electron system spectroscopically in a single sample with the field-effect approach.
Collapse
Affiliation(s)
- Ruoting Yin
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Likuan Ma
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Physics, and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zhenyu Wang
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Physics, and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Chuanxu Ma
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xianhui Chen
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Physics, and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, Hefei, Anhui 230026, China
| | - Bing Wang
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, Hefei, Anhui 230026, China
| |
Collapse
|
36
|
Fan Q, Wang L, Xu D, Duo Y, Gao J, Zhang L, Wang X, Chen X, Li J, Zhang H. Solution-gated transistors of two-dimensional materials for chemical and biological sensors: status and challenges. NANOSCALE 2020; 12:11364-11394. [PMID: 32428057 DOI: 10.1039/d0nr01125h] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) materials have been the focus of materials research for many years due to their unique fascinating properties and large specific surface area (SSA). They are very sensitive to the analytes (ions, glucose, DNA, protein, etc.), resulting in their wide-spread development in the field of sensing. New 2D materials, as the basis of applications, are constantly being fabricated and comprehensively studied. In a variety of sensing applications, the solution-gated transistor (SGT) is a promising biochemical sensing platform because it can work at low voltage in different electrolytes, which is ideal for monitoring body fluids in wearable electronics, e-skin, or implantable devices. However, there are still some key challenges, such as device stability and reproducibility, that must be faced in order to pave the way for the development of cost-effective, flexible, and transparent SGTs with 2D materials. In this review, the device preparation, device physics, and the latest application prospects of 2D materials-based SGTs are systematically presented. Besides, a bold perspective is also provided for the future development of these devices.
Collapse
Affiliation(s)
- Qin Fan
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lude Wang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P. R. China.
| | - Duo Xu
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China.
| | - Yanhong Duo
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P. R. China.
| | - Jie Gao
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China.
| | - Lei Zhang
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Xianbao Wang
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Xiang Chen
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China.
| | - Jinhua Li
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P. R. China.
| |
Collapse
|
37
|
Głodzik S, Domański T. In-gap states of magnetic impurity in quantum spin Hall insulator proximitized to a superconductor. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:235501. [PMID: 32079006 DOI: 10.1088/1361-648x/ab786d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We study in-gap states of a single magnetic impurity embedded in a honeycomb monolayer which is deposited on superconducting substrate. The intrinsic spin-orbit coupling induces the quantum spin Hall insulating (QSHI) phase gapped around the Fermi energy. Under such circumstances we consider the emergence of Shiba-like bound states driven by the superconducting proximity effect. We investigate their topography, spin-polarization and signatures of the quantum phase transition manifested by reversal of the local currents circulating around the magnetic impurity. These phenomena might be important for more exotic in-gap quasiparticles in such complex nanostructures as magnetic nanowires or islands, where the spin-orbit interaction along with the proximity induced electron pairing give rise to topological phases hosting the protected boundary modes.
Collapse
|
38
|
Nobukane H, Yanagihara K, Kunisada Y, Ogasawara Y, Isono K, Nomura K, Tanahashi K, Nomura T, Akiyama T, Tanda S. Co-appearance of superconductivity and ferromagnetism in a Ca 2RuO 4 nanofilm crystal. Sci Rep 2020; 10:3462. [PMID: 32103095 PMCID: PMC7044234 DOI: 10.1038/s41598-020-60313-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2019] [Accepted: 02/10/2020] [Indexed: 12/03/2022] Open
Abstract
By tuning the physical and chemical pressures of layered perovskite materials we can realize the quantum states of both superconductors and insulators. By reducing the thickness of a layered crystal to a nanometer level, a nanofilm crystal can provide novel quantum states that have not previously been found in bulk crystals. Here we report the realization of high-temperature superconductivity in Ca2RuO4 nanofilm single crystals. Ca2RuO4 thin film with the highest transition temperature Tc (midpoint) of 64 K exhibits zero resistance in electric transport measurements. The superconducting critical current exhibited a logarithmic dependence on temperature and was enhanced by an external magnetic field. Magnetic measurements revealed a ferromagnetic transition at 180 K and diamagnetic magnetization due to superconductivity. Our results suggest the co-appearance of superconductivity and ferromagnetism in Ca2RuO4 nanofilm crystals. We also found that the induced bias current and the tuned film thickness caused a superconductor-insulator transition. The fabrication of micro-nanocrystals made of layered material enables us to discuss rich superconducting phenomena in ruthenates.
Collapse
Affiliation(s)
- Hiroyoshi Nobukane
- Department of Physics, Hokkaido University, Sapporo, 060-0810, Japan. .,Center of Education and Research for Topological Science and Technology, Hokkaido University, Sapporo, 060-8628, Japan.
| | - Kosei Yanagihara
- Department of Physics, Hokkaido University, Sapporo, 060-0810, Japan
| | - Yuji Kunisada
- Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Sapporo, 060-0828, Japan
| | - Yunito Ogasawara
- Department of Physics, Hokkaido University, Sapporo, 060-0810, Japan
| | - Kakeru Isono
- Department of Physics, Hokkaido University, Sapporo, 060-0810, Japan
| | - Kazushige Nomura
- Department of Physics, Hokkaido University, Sapporo, 060-0810, Japan
| | - Keita Tanahashi
- Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Sapporo, 060-0828, Japan
| | - Takahiro Nomura
- Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Sapporo, 060-0828, Japan
| | - Tomohiro Akiyama
- Center of Education and Research for Topological Science and Technology, Hokkaido University, Sapporo, 060-8628, Japan.,Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Sapporo, 060-0828, Japan
| | - Satoshi Tanda
- Center of Education and Research for Topological Science and Technology, Hokkaido University, Sapporo, 060-8628, Japan.,Department of Applied Physics, Hokkaido University, Sapporo, 060-8628, Japan
| |
Collapse
|
39
|
Film-thickness-driven superconductor to insulator transition in cuprate superconductors. Sci Rep 2020; 10:3236. [PMID: 32094455 PMCID: PMC7039923 DOI: 10.1038/s41598-020-60037-y] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2019] [Accepted: 02/05/2020] [Indexed: 12/04/2022] Open
Abstract
The superconductor-insulator transition induced by film thickness control is investigated for the optimally doped cuprate superconductor La1.85Sr0.15CuO4. Epitaxial thin films are grown on an almost exactly matched substrate LaAlO3 (001). Despite the wide thickness range of 6 nm to 300 nm, all films are grown coherently without significant relaxation of the misfit strain. Electronic transport measurement exhibits systematic suppression of the superconducting phase by reducing the film thickness, thereby inducing a superconductor-insulator transition at a critical thickness of ~10 nm. The emergence of a resistance peak preceding the superconducting transition is discussed based on the weak localization. X-ray photoelectron spectroscopy results show the possibility that oxygen vacancies are present near the interface.
Collapse
|
40
|
Yi D, Wang Y, van ʼt Erve OMJ, Xu L, Yuan H, Veit MJ, Balakrishnan PP, Choi Y, N'Diaye AT, Shafer P, Arenholz E, Grutter A, Xu H, Yu P, Jonker BT, Suzuki Y. Emergent electric field control of phase transformation in oxide superlattices. Nat Commun 2020; 11:902. [PMID: 32060300 PMCID: PMC7021769 DOI: 10.1038/s41467-020-14631-3] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2019] [Accepted: 01/20/2020] [Indexed: 11/09/2022] Open
Abstract
Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and voltage-driven ion transfer, has been identified as a powerful means to achieve electric-field-controlled phase transformations. The class of transition metal oxides provide many potential candidates that present a strong response under electrolytic gating. However, very few show a reversible structural transformation at room-temperature. Here, we report the realization of a digitally synthesized transition metal oxide that shows a reversible, electric-field-controlled transformation between distinct crystalline phases at room-temperature. In superlattices comprised of alternating one-unit-cell of SrIrO3 and La0.2Sr0.8MnO3, we find a reversible phase transformation with a 7% lattice change and dramatic modulation in chemical, electronic, magnetic and optical properties, mediated by the reversible transfer of oxygen and hydrogen ions. Strikingly, this phase transformation is absent in the constituent oxides, solid solutions and larger period superlattices. Our findings open up this class of materials for voltage-controlled functionality.
Collapse
Affiliation(s)
- Di Yi
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA.
| | - Yujia Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Olaf M J van ʼt Erve
- Materials Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Liubin Xu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA
| | - Hongtao Yuan
- National Laboratory of Solid-State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Michael J Veit
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
| | - Purnima P Balakrishnan
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- Department of Physics, Stanford University, Stanford, CA, 94305, USA
| | - Yongseong Choi
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Alpha T N'Diaye
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Padraic Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Elke Arenholz
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY, 14853, USA
| | - Alexander Grutter
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD, 20899-6102, USA
| | - Haixuan Xu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA.
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China.
- Frontier Science Center for Quantum Information, Beijing, 100084, China.
- RIKEN Center for Emergent Matter Science (CEMS), Saitama, 351-0198, Japan.
| | - Berend T Jonker
- Materials Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Yuri Suzuki
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
| |
Collapse
|
41
|
Shi Z, Baity PG, Sasagawa T, Popović D. Vortex phase diagram and the normal state of cuprates with charge and spin orders. SCIENCE ADVANCES 2020; 6:eaay8946. [PMID: 32110736 PMCID: PMC7021506 DOI: 10.1126/sciadv.aay8946] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/26/2019] [Accepted: 11/26/2019] [Indexed: 06/10/2023]
Abstract
The phase diagram of underdoped cuprates in a magnetic field (H) is key to understanding the anomalous normal state of these high-temperature superconductors. However, the upper critical field (H c2), the extent of superconducting (SC) phase with vortices, and the role of charge orders at high H remain controversial. Here we study stripe-ordered La-214, i.e., cuprates in which charge orders are most pronounced and zero-field SC transition temperatures T c 0 are lowest. This enables us to explore the vortex phases in a previously inaccessible energy scale window. By combining linear and nonlinear transport techniques sensitive to vortex matter, we determine the T - H phase diagram, directly detect H c2, and reveal novel properties of the high-field ground state. Our results demonstrate that quantum fluctuations and disorder play a key role as T → 0, while the high-field ground state is likely a metal, not an insulator, due to the presence of stripes.
Collapse
Affiliation(s)
- Zhenzhong Shi
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA
| | - P. G. Baity
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA
- Department of Physics, Florida State University, Tallahassee, FL 32306, USA
| | - T. Sasagawa
- Materials and Structures Laboratory, Tokyo Institute of Technology, Kanagawa 226-8503, Japan
| | - Dragana Popović
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA
- Department of Physics, Florida State University, Tallahassee, FL 32306, USA
| |
Collapse
|
42
|
Murray PD, Gilbert DA, Grutter AJ, Kirby BJ, Hernández-Maldonado D, Varela M, Brubaker ZE, Liyanage WLNC, Chopdekar RV, Taufour V, Zieve RJ, Jeffries JR, Arenholz E, Takamura Y, Borchers JA, Liu K. Interfacial-Redox-Induced Tuning of Superconductivity in YBa 2Cu 3O 7-δ. ACS APPLIED MATERIALS & INTERFACES 2020; 12:4741-4748. [PMID: 31880904 DOI: 10.1021/acsami.9b18820] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Solid-state ionic approaches for modifying ion distributions in getter/oxide heterostructures offer exciting potentials to control material properties. Here, we report a simple, scalable approach allowing for manipulation of the superconducting transition in optimally doped YBa2Cu3O7-δ (YBCO) films via a chemically driven ionic migration mechanism. Using a thin Gd capping layer of up to 20 nm deposited onto 100 nm thick epitaxial YBCO films, oxygen is found to leach from deep within the YBCO. Progressive reduction of the superconducting transition is observed, with complete suppression possible for a sufficiently thick Gd layer. These effects arise from the combined impact of redox-driven electron doping and modification of the YBCO microstructure due to oxygen migration and depletion. This work demonstrates an effective step toward total ionic tuning of superconductivity in oxides, an interface-induced effect that goes well into the quasi-bulk regime, opening-up possibilities for electric field manipulation.
Collapse
Affiliation(s)
| | - Dustin A Gilbert
- NIST Center for Neutron Research , National Institute of Standards and Technology , Gaithersburg , Maryland 20899 , United States
- Department of Materials Science and Engineering , University of Tennessee , Knoxville , Tennessee 37996 , United States
| | - Alexander J Grutter
- NIST Center for Neutron Research , National Institute of Standards and Technology , Gaithersburg , Maryland 20899 , United States
| | - Brian J Kirby
- NIST Center for Neutron Research , National Institute of Standards and Technology , Gaithersburg , Maryland 20899 , United States
| | - David Hernández-Maldonado
- Dept. de Física de Materiales & Instituto Pluridisciplinar , Universidad Complutense de Madrid , Madrid 28040 , Spain
| | - Maria Varela
- Dept. de Física de Materiales & Instituto Pluridisciplinar , Universidad Complutense de Madrid , Madrid 28040 , Spain
| | - Zachary E Brubaker
- ∇Materials Science Division and ○Physics Division , Lawrence Livermore National Laboratory , Livermore , California 94550 , United States
| | - W L N C Liyanage
- Department of Materials Science and Engineering , University of Tennessee , Knoxville , Tennessee 37996 , United States
| | - Rajesh V Chopdekar
- Advanced Light Source , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | | | | | | | - Elke Arenholz
- Advanced Light Source , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | | | - Julie A Borchers
- NIST Center for Neutron Research , National Institute of Standards and Technology , Gaithersburg , Maryland 20899 , United States
| | - Kai Liu
- Physics Department , Georgetown University , Washington, D.C. 20057 , United States
| |
Collapse
|
43
|
Sterpetti E, Biscaras J, Erb A, Shukla A. Crossover to strange metal phase: quantum criticality in one unit cell Bi 2Sr 2CaCu 2O[Formula: see text]. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:045601. [PMID: 31585447 DOI: 10.1088/1361-648x/ab4b21] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Transport measurements can be used to determine the phase diagram of high temperature superconductors by detecting variations in temperature dependence of resistance in different regions of the phase diagram. While for bulk measurements several samples with varying chemical doping are used, we continuously vary carrier density in our ultra-thin two-dimensional Bi2Sr2CaCu2O[Formula: see text] device by electrostatic means and the space charge doping method. Here we concentrate on a low-disorder, high quality single unit cell thick sample. We establish the crossover to strange metal from the pseudogap and Fermi liquid phases in the normal state, close to the superconducting dome. By extrapolation we demarcate a critical doping region which is thought to correspond to a quantum phase transition at very low temperature.
Collapse
Affiliation(s)
- Edoardo Sterpetti
- Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne Université, UMR CNRS 7590, MNHN, 4 Place Jussieu, F-75005 Paris, France
| | | | | | | |
Collapse
|
44
|
Zhang L. Universal Thermodynamic Signature of Self-Dual Quantum Critical Points. PHYSICAL REVIEW LETTERS 2019; 123:230601. [PMID: 31868494 DOI: 10.1103/physrevlett.123.230601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2019] [Revised: 08/25/2019] [Indexed: 06/10/2023]
Abstract
Self-duality is an algebraic structure of certain critical theories, which is not encoded in the scaling dimensions and critical exponents. In this work, a universal thermodynamic signature of self-dual quantum critical points (QCPs) is proposed. It is shown that the Grüneisen ratio at a self-dual QCP remains finite as T→0, which is in sharp contrast to its universal divergence at a generic QCP without self-duality, Γ(T,g_{c})∼T^{-1/zν}. This conclusion is drawn based on the hyperscaling theory near the QCP, and has far-reaching implications for experiments and numerical simulations.
Collapse
Affiliation(s)
- Long Zhang
- Kavli Institute for Theoretical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China and Physical Science Laboratory, Huairou National Comprehensive Science Center, Beijing 101400, China
| |
Collapse
|
45
|
Rafique M, Feng Z, Lin Z, Wei X, Liao M, Zhang D, Jin K, Xue QK. Ionic Liquid Gating Induced Protonation of Electron-Doped Cuprate Superconductors. NANO LETTERS 2019; 19:7775-7780. [PMID: 31664842 DOI: 10.1021/acs.nanolett.9b02776] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Ion injection controlled by electric field has attracted growing attention due to its tunability over bulk-like materials. Here, we achieve protonation of an electron-doped high-temperature superconductor, La2-xCexCuO4, by gating in the electrochemical regime of the ionic liquid. Such a process induces a superconductor-insulator transition together with the crossing of the Fermi surface reconstruction point. Applying negative voltages not only can reverse the protonation process but also recovers superconductivity in samples deteriorated by moisture in the ambient. Our work extends the application of electric-field-induced protonation into high-temperature cuprate superconductors.
Collapse
Affiliation(s)
- Mohsin Rafique
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics , Tsinghua University , Beijing 100084 , China
| | - Zhongpei Feng
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Zefeng Lin
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Xinjian Wei
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Menghan Liao
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics , Tsinghua University , Beijing 100084 , China
| | - Ding Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics , Tsinghua University , Beijing 100084 , China
- Beijing Academy of Quantum Information Sciences , Beijing 100193 , China
- Frontier Science Center for Quantum Information , Beijing 100084 , China
| | - Kui Jin
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Qi-Kun Xue
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics , Tsinghua University , Beijing 100084 , China
- Beijing Academy of Quantum Information Sciences , Beijing 100193 , China
- Frontier Science Center for Quantum Information , Beijing 100084 , China
| |
Collapse
|
46
|
High-temperature superconductivity in monolayer Bi 2Sr 2CaCu 2O 8+δ. Nature 2019; 575:156-163. [PMID: 31666697 DOI: 10.1038/s41586-019-1718-x] [Citation(s) in RCA: 84] [Impact Index Per Article: 16.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2019] [Accepted: 08/23/2019] [Indexed: 11/09/2022]
Abstract
Although copper oxide high-temperature superconductors constitute a complex and diverse material family, they all share a layered lattice structure. This curious fact prompts the question of whether high-temperature superconductivity can exist in an isolated monolayer of copper oxide, and if so, whether the two-dimensional superconductivity and various related phenomena differ from those of their three-dimensional counterparts. The answers may provide insights into the role of dimensionality in high-temperature superconductivity. Here we develop a fabrication process that obtains intrinsic monolayer crystals of the high-temperature superconductor Bi2Sr2CaCu2O8+δ (Bi-2212; here, a monolayer refers to a half unit cell that contains two CuO2 planes). The highest superconducting transition temperature of the monolayer is as high as that of optimally doped bulk. The lack of dimensionality effect on the transition temperature defies expectations from the Mermin-Wagner theorem, in contrast to the much-reduced transition temperature in conventional two-dimensional superconductors such as NbSe2. The properties of monolayer Bi-2212 become extremely tunable; our survey of superconductivity, the pseudogap, charge order and the Mott state at various doping concentrations reveals that the phases are indistinguishable from those in the bulk. Monolayer Bi-2212 therefore displays all the fundamental physics of high-temperature superconductivity. Our results establish monolayer copper oxides as a platform for studying high-temperature superconductivity and other strongly correlated phenomena in two dimensions.
Collapse
|
47
|
Electron pairing in the pseudogap state revealed by shot noise in copper oxide junctions. Nature 2019; 572:493-496. [PMID: 31435059 DOI: 10.1038/s41586-019-1486-7] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2019] [Accepted: 06/18/2019] [Indexed: 11/08/2022]
Abstract
In the quest to understand high-temperature superconductivity in copper oxides, debate has been focused on the pseudogap-a partial energy gap that opens over portions of the Fermi surface in the 'normal' state above the bulk critical temperature1. The pseudogap has been attributed to precursor superconductivity, to the existence of preformed pairs and to competing orders such as charge-density waves1-4. A direct determination of the charge of carriers as a function of temperature and bias could help resolve among these alternatives. Here we report measurements of the shot noise of tunnelling current in high-quality La2-xSrxCuO4/La2CuO4/La2-xSrxCuO4 (LSCO/LCO/LSCO) heterostructures fabricated using atomic layer-by-layer molecular beam epitaxy at several doping levels. The data delineate three distinct regions in the bias voltage-temperature space. Well outside the superconducting gap region, the shot noise agrees quantitatively with independent tunnelling of individual charge carriers. Deep within the superconducting gap, shot noise is greatly enhanced, reminiscent of multiple Andreev reflections5-7. Above the critical temperature and extending to biases much larger than the superconducting gap, there is a broad region in which the noise substantially exceeds theoretical expectations for single-charge tunnelling, indicating pairing of charge carriers. These pairs are detectable deep into the pseudogap region of temperature and bias. The presence of these pairs constrains current models of the pseudogap and broken symmetry states, while phase fluctuations limit the domain of superconductivity.
Collapse
|
48
|
Leeuwenhoek M, Norte RA, Bastiaans KM, Cho D, Battisti I, Blanter YM, Gröblacher S, Allan MP. Nanofabricated tips for device-based scanning tunneling microscopy. NANOTECHNOLOGY 2019; 30:335702. [PMID: 31022709 DOI: 10.1088/1361-6528/ab1c7f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
We report on the fabrication and performance of a new kind of tip for scanning tunneling microscopy. By fully incorporating a metallic tip on a silicon chip using modern micromachining and nanofabrication techniques, we realize so-called smart tips and show the possibility of device-based STM tips. Contrary to conventional etched metal wire tips, these can be integrated into lithographically defined electrical circuits. We describe a new fabrication method to create a defined apex on a silicon chip and experimentally demonstrate the high performance of the smart tips, both in stability and resolution. In situ tip preparation methods are possible and we verify that they can resolve the herringbone reconstruction and Friedel oscillations on Au(111) surfaces. We further present an overview of possible applications.
Collapse
Affiliation(s)
- Maarten Leeuwenhoek
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, The Netherlands. Leiden Institute of Physics, Leiden University, Niels Bohrweg 2, 2333CA Leiden, The Netherlands
| | | | | | | | | | | | | | | |
Collapse
|
49
|
Bekaert J, Petrov M, Aperis A, Oppeneer PM, Milošević MV. Hydrogen-Induced High-Temperature Superconductivity in Two-Dimensional Materials: The Example of Hydrogenated Monolayer MgB_{2}. PHYSICAL REVIEW LETTERS 2019; 123:077001. [PMID: 31491112 DOI: 10.1103/physrevlett.123.077001] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2019] [Revised: 04/23/2019] [Indexed: 06/10/2023]
Abstract
Hydrogen-based compounds under ultrahigh pressure, such as the polyhydrides H_{3}S and LaH_{10}, superconduct through the conventional electron-phonon coupling mechanism to attain the record critical temperatures known to date. Here we exploit the intrinsic advantages of hydrogen to strongly enhance phonon-mediated superconductivity in a completely different system, namely, a two-dimensional material with hydrogen adatoms. We find that van Hove singularities in the electronic structure, originating from atomiclike hydrogen states, lead to a strong increase of the electronic density of states at the Fermi level, and thus of the electron-phonon coupling. Additionally, the emergence of high-frequency hydrogen-related phonon modes in this system boosts the electron-phonon coupling further. As a concrete example, we demonstrate the effect of hydrogen adatoms on the superconducting properties of monolayer MgB_{2}, by solving the fully anisotropic Eliashberg equations, in conjunction with a first-principles description of the electronic and vibrational states, and their coupling. We show that hydrogenation leads to a high critical temperature of 67 K, which can be boosted to over 100 K by biaxial tensile strain.
Collapse
Affiliation(s)
- J Bekaert
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - M Petrov
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - A Aperis
- Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala, Sweden
| | - P M Oppeneer
- Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala, Sweden
| | - M V Milošević
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| |
Collapse
|
50
|
Ren X, Wang Y, Xie Z, Xue F, Leighton C, Frisbie CD. Gate-Tuned Insulator-Metal Transition in Electrolyte-Gated Transistors Based on Tellurene. NANO LETTERS 2019; 19:4738-4744. [PMID: 31181883 DOI: 10.1021/acs.nanolett.9b01827] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Tellurene is a recently discovered 2D material with high hole mobility and air stability, rendering it a good candidate for future applications in electronics, optoelectronics, and energy devices. However, the physical properties of tellurene remain poorly understood. In this paper, we report on the fabrication and characterization of high-performance electrolyte-gated transistors (EGTs) based on solution-grown tellurene flakes <30 nm in thickness. Both Hall measurements and resistance-temperature behavior down to 2 K are recorded at multiple gate voltages, and an electronic phase diagram is generated. The results show that it is possible to cross the insulator-metal transition in tellurene EGTs by tuning gate voltage, achieving mobility up to ∼500 cm2 V-1 s-1. In particular, a truly metallic 2D state is observed at gate-induced hole densities >1 × 1013 cm-2, as confirmed by the temperature dependence of resistance and magnetoresistance measurements. Wide-range tuning of the electronic ground state of tellurene is thus achievable in EGTs, opening up new opportunities to realize electrical control of its physical properties.
Collapse
|