1
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Gao M, Lu X, Yang Y, Qin W. Photon-Dipole-Spin Interactions in M(TCNE) x/P(VDF-TrFE) Multiferroic Heterostructure Available for Bimodal Control of Multistate Data-Storage. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405024. [PMID: 38736201 DOI: 10.1002/adma.202405024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/09/2024] [Indexed: 05/14/2024]
Abstract
Organic multiferroic heterostructure is one of the most promising structures for the future design of high-density flexible energy-efficient data storage. Here, organic ferromagnetic metal(tetracyanoethylene) (M(TCNE))x/ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) multiferroic heterostructures are fabricated, where the excited state in M(TCNE)x interacted with localized dipole in P(VDF-TrFE) provides a key link for the interfacial coupling. Thus, aligned dipoles in P(VDF-TrFE) by external electric field can affect the magnetization of Fe(TCNE)x effectively to result in a pronounced magnetization-voltage (M-V) hysteresis loop. Moreover, light-induced electron-hole pairs in Fe(TCNE)x with long lifetime effectively interact with the dipoles in P(VDF-TrFE) to lead to an effect in external light control of electric polarization of P(VDF-TrFE). Overall, the organic multiferroic heterostructure provides the possibility of realizing two storage modes, light control of dipole as well as electric field control of spin, which can broaden multifunctional applications of organic multiferroic materials in the area of multistate storage.
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Affiliation(s)
- Mingsheng Gao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Xiangqian Lu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Yuying Yang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Wei Qin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
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2
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Zhou J, Lu H, Chen D, Huang M, Yan GQ, Al-matouq F, Chang J, Djugba D, Jiang Z, Wang H, Du CR. Sensing spin wave excitations by spin defects in few-layer-thick hexagonal boron nitride. SCIENCE ADVANCES 2024; 10:eadk8495. [PMID: 38691598 PMCID: PMC11062567 DOI: 10.1126/sciadv.adk8495] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2023] [Accepted: 04/01/2024] [Indexed: 05/03/2024]
Abstract
Optically active spin defects in wide bandgap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy [Formula: see text] spin defects contained in few-layer-thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by [Formula: see text] spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and [Formula: see text] spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.
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Affiliation(s)
- Jingcheng Zhou
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Hanyi Lu
- Department of Physics, University of California, San Diego, La Jolla, CA 92093, USA
| | - Di Chen
- Department of Physics, University of Houston, Houston, TX 77204, USA
- Texas Center for Superconductivity, University of Houston, Houston, TX 77204, USA
| | - Mengqi Huang
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Gerald Q. Yan
- Department of Physics, University of California, San Diego, La Jolla, CA 92093, USA
| | - Faris Al-matouq
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Jiu Chang
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Dziga Djugba
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Zhigang Jiang
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Hailong Wang
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Chunhui Rita Du
- School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
- Department of Physics, University of California, San Diego, La Jolla, CA 92093, USA
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3
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Yu X, Ji Y, Shen X, Le X. Self-Powered Pressure-Temperature Bimodal Sensing Based on the Piezo-Pyroelectric Effect for Robotic Perception. SENSORS (BASEL, SWITZERLAND) 2024; 24:2773. [PMID: 38732880 PMCID: PMC11086114 DOI: 10.3390/s24092773] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 04/21/2024] [Accepted: 04/23/2024] [Indexed: 05/13/2024]
Abstract
Multifunctional sensors have played a crucial role in constructing high-integration electronic networks. Most of the current multifunctional sensors rely on multiple materials to simultaneously detect different physical stimuli. Here, we demonstrate the large piezo-pyroelectric effect in ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) single crystals for simultaneous pressure and temperature sensing. The outstanding piezoelectric and pyroelectric properties of PMN-PT result in rapid response speed and high sensitivity, with values of 46 ms and 28.4 nA kPa-1 for pressure sensing, and 1.98 s and 94.66 nC °C-1 for temperature detection, respectively. By leveraging the distinct differences in the response speed of piezoelectric and pyroelectric responses, the piezo-pyroelectric effect of PMN-PT can effectively detect pressure and temperature from mixed-force thermal stimuli, which enables a robotic hand for stimuli classification. With appealing multifunctionality, fast speed, high sensitivity, and compact structure, the proposed self-powered bimodal sensor therefore holds significant potential for high-performance artificial perception.
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Affiliation(s)
- Xiang Yu
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Xinyi Shen
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Xiaoyun Le
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
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4
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Shen L, Xiao D, Cao T. Proximity-Induced Exchange Interaction: A New Pathway for Quantum Sensing Using Spin Centers in Hexagonal Boron Nitride. J Phys Chem Lett 2024; 15:4359-4366. [PMID: 38619851 DOI: 10.1021/acs.jpclett.4c00722] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Defects in hexagonal boron nitride (hBN), a two-dimensional van der Waals material, have attracted a great deal of interest because of its potential in various quantum applications. Due to hBN's two-dimensional nature, the spin center in hBN can be engineered in the proximity of the target material, providing advantages over its three-dimensional counterparts, such as the nitrogen-vacancy center in diamond. Here we propose a novel quantum sensing protocol driven by exchange interaction between the spin center in hBN and the underlying magnetic substrate induced by the magnetic proximity effect. By first-principles calculation, we demonstrate that the induced exchange interaction dominates over the dipole-dipole interaction by orders of magnitude when in the proximity. The interaction remains antiferromagnetic across all stacking configurations between the spin center in hBN and the target van der Waals magnets. Additionally, we explored the scaling behavior of the exchange field as a function of the spatial separation between the spin center and the targets.
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Affiliation(s)
- Lingnan Shen
- Department of Physics, University of Washington, Seattle, Washington 98195-1560, United States
| | - Di Xiao
- Department of Physics, University of Washington, Seattle, Washington 98195-1560, United States
- Department of Materials Science & Engineering, University of Washington, Seattle, Washington 98195-2120, United States
- Pacific Northwest National Laboratory, Richland, Washington 99354, United States
| | - Ting Cao
- Department of Materials Science & Engineering, University of Washington, Seattle, Washington 98195-2120, United States
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5
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Luo J, Geng Y, Rana F, Fuchs GD. Room temperature optically detected magnetic resonance of single spins in GaN. NATURE MATERIALS 2024; 23:512-518. [PMID: 38347119 DOI: 10.1038/s41563-024-01803-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Accepted: 01/09/2024] [Indexed: 03/14/2024]
Abstract
High-contrast optically detected magnetic resonance is a valuable property for reading out the spin of isolated defect colour centres at room temperature. Spin-active single defect centres have been studied in wide bandgap materials including diamond, SiC and hexagonal boron nitride, each with associated advantages for applications. We report the discovery of optically detected magnetic resonance in two distinct species of bright, isolated defect centres hosted in GaN. In one group, we find negative optically detected magnetic resonance of a few percent associated with a metastable electronic state, whereas in the other, we find positive optically detected magnetic resonance of up to 30% associated with the ground and optically excited electronic states. We examine the spin symmetry axis of each defect species and establish coherent control over a single defect's ground-state spin. Given the maturity of the semiconductor host, these results are promising for scalable and integrated quantum sensing applications.
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Affiliation(s)
- Jialun Luo
- Department of Physics, Cornell University, Ithaca, NY, USA
| | - Yifei Geng
- School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA
| | - Farhan Rana
- School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA
| | - Gregory D Fuchs
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA.
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6
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Liu A, Zhang X, Liu Z, Li Y, Peng X, Li X, Qin Y, Hu C, Qiu Y, Jiang H, Wang Y, Li Y, Tang J, Liu J, Guo H, Deng T, Peng S, Tian H, Ren TL. The Roadmap of 2D Materials and Devices Toward Chips. NANO-MICRO LETTERS 2024; 16:119. [PMID: 38363512 PMCID: PMC10873265 DOI: 10.1007/s40820-023-01273-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 02/17/2024]
Abstract
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
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Affiliation(s)
- Anhan Liu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Xiaowei Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Ziyu Liu
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yuning Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China
| | - Xueyang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Chen Hu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yanqing Qiu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Han Jiang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yang Wang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yifan Li
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China.
| | - Tao Deng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
- IMECAS-HKUST-Joint Laboratory of Microelectronics, Beijing, 100029, People's Republic of China.
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
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7
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Turiansky ME, Alkauskas A, Van de Walle CG. Dimensionality effects on trap-assisted recombination: the Sommerfeld parameter. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:195902. [PMID: 38306700 DOI: 10.1088/1361-648x/ad2588] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Accepted: 02/02/2024] [Indexed: 02/04/2024]
Abstract
In the context of condensed matter physics, the Sommerfeld parameter describes the enhancement or suppression of free-carrier charge density in the vicinity of a charged center. The Sommerfeld parameter is known for three-dimensional systems and is integral to the description of trap-assisted recombination in solids. Here we derive the Sommerfeld parameter in one and two dimensions and compare with the results in three dimensions. We provide an approximate analytical expression for the Sommerfeld parameter in two dimensions. Our results indicate that the effect of the Sommerfeld parameter is to suppress trap-assisted recombination in decreased dimensionality.
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Affiliation(s)
- Mark E Turiansky
- Materials Department, University of California, Santa Barbara, CA 93106-5050, United States of America
| | - Audrius Alkauskas
- Center for Physical Sciences and Technology (FTMC), Vilnius LT-10257, Lithuania
| | - Chris G Van de Walle
- Materials Department, University of California, Santa Barbara, CA 93106-5050, United States of America
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8
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Murzakhanov FF, Sadovnikova MA, Gracheva IN, Mamin GV, Baibekov EI, Mokhov EN. Exploring the properties of theVB-defect in hBN: optical spin polarization, Rabi oscillations, and coherent nuclei modulation. NANOTECHNOLOGY 2024; 35:155001. [PMID: 38154127 DOI: 10.1088/1361-6528/ad1940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 12/27/2023] [Indexed: 12/30/2023]
Abstract
Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gapEg= 6 eV, containing a negatively charged boron vacancy (VB-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value ofVB-spin polarization under optical pumping withλext= 532 nm laser using high-frequency (νmw= 94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to beP≈ 38.4%. Our study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40μs, which is nearly two orders of magnitude longer than what was previously reported. Analysis of the coherent electron-nuclear interaction through the observed electron spin echo envelope modulation made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a corresponding quadrupole coupling constantCq= 180 kHz related to nuclear quadrupole moment of14N. These results have fundamental importance for understanding the spin properties of boron vacancy.
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Affiliation(s)
- Fadis F Murzakhanov
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | | | - Irina N Gracheva
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Georgy V Mamin
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Eduard I Baibekov
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Evgeniy N Mokhov
- Ioffe Institute, Polytekhnicheskaya, 26, St Petersburg 194021, Russia
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9
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Sarkar S, Xu Y, Mathew S, Lal M, Chung JY, Lee HY, Watanabe K, Taniguchi T, Venkatesan T, Gradečak S. Identifying Luminescent Boron Vacancies in h-BN Generated Using Controlled He + Ion Irradiation. NANO LETTERS 2024; 24:43-50. [PMID: 37930062 DOI: 10.1021/acs.nanolett.3c03113] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2023]
Abstract
The defect emission from h-BN at 1.55 eV is interesting as it enables optical readout of spins. It is necessary to identify the nature of the relevant point defects for its controlled introduction. However, it is challenging to engineer point defects in h-BN without changing the local atomic structure. Here, we controllably introduce boron vacancies in h-BN using an ultrahigh spatial resolution and low-energy He+ ion beam. By optimizing the He+ ion irradiation conditions, we control the quantity and location of defects spatially and along the depth of h-BN to achieve a robust photoluminescence emission at 1.55 eV from 10 K to room temperature. We show that as-generated defects activate an additional Raman mode at 1295 cm-1. Electron energy loss spectroscopy confirms introduction of boron vacancies without modification of the local h-BN crystal structure. Our results provide a deterministic strategy to create scalable boron vacancy emitters in h-BN for quantum photonics.
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Affiliation(s)
- Soumya Sarkar
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Yue Xu
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Sinu Mathew
- Department of Physics, S.B. College, Mahatma Gandhi University, Kerala 686101, India
| | - Manohar Lal
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Jing-Yang Chung
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
- Applied Materials - NUS Advanced Materials Corporate Lab, 5A Engineering Drive 1, Singapore 117411, Singapore
| | - Hae Yeon Lee
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02141, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Thirumalai Venkatesan
- Center for Quantum Research and Technology (CQRT), and Center of Optimal Materials for Emerging Technologies (COMET), University of Oklahoma, Norman, Oklahoma 73019, United States
| | - Silvija Gradečak
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
- Applied Materials - NUS Advanced Materials Corporate Lab, 5A Engineering Drive 1, Singapore 117411, Singapore
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10
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Gong R, Du X, Janzen E, Liu V, Liu Z, He G, Ye B, Li T, Yao NY, Edgar JH, Henriksen EA, Zu C. Isotope engineering for spin defects in van der Waals materials. Nat Commun 2024; 15:104. [PMID: 38168074 PMCID: PMC10761865 DOI: 10.1038/s41467-023-44494-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Accepted: 12/14/2023] [Indexed: 01/05/2024] Open
Abstract
Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ([Formula: see text]) in hexagonal boron nitride (hBN), we grow isotopically purified h10B15N crystals. Compared to [Formula: see text] in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded [Formula: see text] spin transitions as well as extended coherence time T2 and relaxation time T1. For quantum sensing, [Formula: see text] centers in our h10B15N samples exhibit a factor of 4 (2) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the [Formula: see text] hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor 15N nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.
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Affiliation(s)
- Ruotian Gong
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Xinyi Du
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Eli Janzen
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Vincent Liu
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Zhongyuan Liu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Guanghui He
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Bingtian Ye
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Norman Y Yao
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - James H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Erik A Henriksen
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA
| | - Chong Zu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA.
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA.
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11
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Li D, Liu ZF, Yang L. Accelerating GW Calculations of Point Defects with the Defect-Patched Screening Approximation. J Chem Theory Comput 2023; 19:9435-9444. [PMID: 38059814 DOI: 10.1021/acs.jctc.3c01032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
The GW approximation has been widely accepted as an ab initio tool for calculating defect levels with the many-electron effect included. However, the GW simulation cost increases dramatically with the system size, and unfortunately, large supercells are often required to model low-density defects that are experimentally relevant. In this work, we propose to accelerate GW calculations of point defects by reducing the simulation cost of many-electron screening, which is the primary computational bottleneck. The random-phase approximation of many-electron screening is divided into two parts: one is the intrinsic screening, calculated using a unit cell of pristine structures, and the other is the defect-induced screening, calculated using the supercell within a small energy window. Depending on specific defects, one may only need to consider the intrinsic screening or include the defect contribution. This approach avoids the summation of many conduction states of supercells and significantly reduces the simulation cost. We have applied it to calculate various point defects, including neutral and charged defects in two-dimensional and bulk systems with small or large bandgaps. The results are consistent with those from the direct GW simulations. This defect-patched screening approach not only clarifies the roles of defects in many-electron screening but also paves the way to fast screen defect structures/materials for novel applications, including single-photon sources, quantum qubits, and quantum sensors.
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Affiliation(s)
- Du Li
- Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130, United States
| | - Zhen-Fei Liu
- Department of Chemistry, Wayne State University, Detroit, Michigan 48202, United States
| | - Li Yang
- Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130, United States
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States
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12
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Castelletto S, Lew CTK, Lin WX, Xu JS. Quantum systems in silicon carbide for sensing applications. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:014501. [PMID: 38029424 DOI: 10.1088/1361-6633/ad10b3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 11/29/2023] [Indexed: 12/01/2023]
Abstract
This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.
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Affiliation(s)
- S Castelletto
- School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia
| | - C T-K Lew
- School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
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13
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Monge R, Delord T, Thiering G, Gali Á, Meriles CA. Resonant Versus Nonresonant Spin Readout of a Nitrogen-Vacancy Center in Diamond under Cryogenic Conditions. PHYSICAL REVIEW LETTERS 2023; 131:236901. [PMID: 38134790 DOI: 10.1103/physrevlett.131.236901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Accepted: 10/23/2023] [Indexed: 12/24/2023]
Abstract
The last decade has seen an explosive growth in the use of color centers for metrology applications, the paradigm example arguably being the nitrogen-vacancy (NV) center in diamond. Here, we focus on the regime of cryogenic temperatures and examine the impact of spin-selective, narrow-band laser excitation on NV readout. Specifically, we demonstrate a more than fourfold improvement in sensitivity compared to that possible with nonresonant (green) illumination, largely due to a boost in readout contrast and integrated photon count. We also leverage nuclear spin relaxation under resonant excitation to polarize the ^{14}N host, which we then prove beneficial for spin magnetometry. These results open opportunities in the application of NV sensing to the investigation of condensed matter systems, particularly those exhibiting superconducting, magnetic, or topological phases selectively present at low temperatures.
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Affiliation(s)
- Richard Monge
- Department of Physics, CUNY-City College of New York, New York, New York 10031, USA
- CUNY-Graduate Center, New York, New York 10016, USA
| | - Tom Delord
- Department of Physics, CUNY-City College of New York, New York, New York 10031, USA
| | - Gergő Thiering
- HUN-REN Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
| | - Ádám Gali
- HUN-REN Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3., H-1111 Budapest, Hungary
| | - Carlos A Meriles
- Department of Physics, CUNY-City College of New York, New York, New York 10031, USA
- CUNY-Graduate Center, New York, New York 10016, USA
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14
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Clua-Provost T, Durand A, Mu Z, Rastoin T, Fraunié J, Janzen E, Schutte H, Edgar JH, Seine G, Claverie A, Marie X, Robert C, Gil B, Cassabois G, Jacques V. Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride. PHYSICAL REVIEW LETTERS 2023; 131:126901. [PMID: 37802939 DOI: 10.1103/physrevlett.131.126901] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 08/26/2023] [Indexed: 10/08/2023]
Abstract
We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V_{B}^{-}) centers hosted in isotopically engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with ^{15}N yields a simplified and well-resolved hyperfine structure of V_{B}^{-} centers, while purification with ^{10}B leads to narrower ESR linewidths. These results establish isotopically purified h^{10}B^{15}N crystals as the optimal host material for future use of V_{B}^{-} spin defects in quantum technologies. Capitalizing on these findings, we then demonstrate optically induced polarization of ^{15}N nuclei in h^{10}B^{15}N, whose mechanism relies on electron-nuclear spin mixing in the V_{B}^{-} ground state. This work opens up new prospects for future developments of spin-based quantum sensors and simulators on a two-dimensional material platform.
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Affiliation(s)
- T Clua-Provost
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - A Durand
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - Z Mu
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - T Rastoin
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - J Fraunié
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - E Janzen
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, USA
| | - H Schutte
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, USA
| | - J H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, USA
| | - G Seine
- CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France
| | - A Claverie
- CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France
| | - X Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - C Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - B Gil
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - G Cassabois
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - V Jacques
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
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15
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Zeng XD, Yang YZ, Guo NJ, Li ZP, Wang ZA, Xie LK, Yu S, Meng Y, Li Q, Xu JS, Liu W, Wang YT, Tang JS, Li CF, Guo GC. Reflective dielectric cavity enhanced emission from hexagonal boron nitride spin defect arrays. NANOSCALE 2023; 15:15000-15007. [PMID: 37665054 DOI: 10.1039/d3nr03486k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2023]
Abstract
Among the various kinds of spin defects in hexagonal boron nitride (hBN), the negatively charged boron vacancy (VB-) spin defect that can be site-specifically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency restricts its practical applications. Here, we demonstrate a robust enhancement structure called reflective dielectric cavity (RDC) with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement for VB- defects. In the experiment, we used a metal reflective layer under the hBN flakes, filled with a transition dielectric layer in the middle, and adjusted the thickness of the dielectric layer to achieve the best coupling between RDC and spin defects in hBN. A remarkable 11-fold enhancement in the fluorescence intensity of VB- spin defects in hBN flakes can be achieved. By designing the metal layer into a waveguide structure, high-contrast optically detected magnetic resonance (ODMR) signal (∼21%) can be obtained. The oxide layer of the RDC can be used as the integrated material to implement secondary processing of micro-nano photonic devices, which means that it can be combined with other enhancement structures to achieve stronger enhancement. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.
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Affiliation(s)
- Xiao-Dong Zeng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lin-Ke Xie
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qiang Li
- Institute of Advanced Semiconductors and Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
- State Key Laboratory of Silicon Materials and Advanced Semiconductors and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
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16
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Durand A, Clua-Provost T, Fabre F, Kumar P, Li J, Edgar JH, Udvarhelyi P, Gali A, Marie X, Robert C, Gérard JM, Gil B, Cassabois G, Jacques V. Optically Active Spin Defects in Few-Layer Thick Hexagonal Boron Nitride. PHYSICAL REVIEW LETTERS 2023; 131:116902. [PMID: 37774304 DOI: 10.1103/physrevlett.131.116902] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Accepted: 08/22/2023] [Indexed: 10/01/2023]
Abstract
Optically active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this Letter, we first demonstrate that the electron spin resonance frequencies of boron vacancy centers (V_{B}^{-}) can be detected optically in the limit of few-atomic-layer thick hBN flakes despite the nanoscale proximity of the crystal surface that often leads to a degradation of the stability of solid-state spin defects. We then analyze the variations of the electronic spin properties of V_{B}^{-} centers with the hBN thickness with a focus on (i) the zero-field splitting parameters, (ii) the optically induced spin polarization rate and (iii) the longitudinal spin relaxation time. This Letter provides important insights into the properties of V_{B}^{-} centers embedded in ultrathin hBN flakes, which are valuable for future developments of foil-based quantum sensing technologies.
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Affiliation(s)
- A Durand
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - T Clua-Provost
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - F Fabre
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - P Kumar
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - J Li
- Tim Taylor Department of Chemical Engineering, Kansas State University, Kansas 66506, USA
| | - J H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Kansas 66506, USA
| | - P Udvarhelyi
- Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
| | - A Gali
- Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
- Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
| | - X Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - C Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - J M Gérard
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - B Gil
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - G Cassabois
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - V Jacques
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
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17
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Fujiwara M. Diamond quantum sensors in microfluidics technology. BIOMICROFLUIDICS 2023; 17:054107. [PMID: 37854889 PMCID: PMC10581739 DOI: 10.1063/5.0172795] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 09/29/2023] [Indexed: 10/20/2023]
Abstract
Diamond quantum sensing is an emerging technology for probing multiple physico-chemical parameters in the nano- to micro-scale dimensions within diverse chemical and biological contexts. Integrating these sensors into microfluidic devices enables the precise quantification and analysis of small sample volumes in microscale channels. In this Perspective, we present recent advancements in the integration of diamond quantum sensors with microfluidic devices and explore their prospects with a focus on forthcoming technological developments.
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Affiliation(s)
- Masazumi Fujiwara
- Department of Chemistry, Graduate School of Environmental, Life, Natural Science and Technology, Okayama University, 3-1-1, Tsushimanaka, Kita-ku, Okayama-shi, Okayama 700-8530, Japan
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18
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Yang Y, Ai C, Chen W, Zhen J, Kong X, Jiang Y. Recent Advances in Sources of Bio-Inspiration and Materials for Robotics and Actuators. SMALL METHODS 2023; 7:e2300338. [PMID: 37381685 DOI: 10.1002/smtd.202300338] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2023] [Revised: 05/16/2023] [Indexed: 06/30/2023]
Abstract
Bionic robotics and actuators have made dramatic advancements in structural design, material preparation, and application owing to the richness of nature and innovative material design. Appropriate and ingenious sources of bio-inspiration can stimulate a large number of different bionic systems. After millennia of survival and evolutionary exploration, the mere existence of life confirms that nature is constantly moving in an evolutionary direction of optimization and improvement. To this end, bio-inspired robots and actuators can be constructed for the completion of a variety of artificial design instructions and requirements. In this article, the advances in bio-inspired materials for robotics and actuators with the sources of bio-inspiration are reviewed. The specific sources of inspiration in bionic systems and corresponding bio-inspired applications are summarized first. Then the basic functions of materials in bio-inspired robots and actuators is discussed. Moreover, a principle of matching biomaterials is creatively suggested. Furthermore, the implementation of biological information extraction is discussed, and the preparation methods of bionic materials are reclassified. Finally, the challenges and potential opportunities involved in finding sources of bio-inspiration and materials for robotics and actuators in the future is discussed.
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Affiliation(s)
- Yue Yang
- Hebei Provincial Key Laboratory of Heavy Machinery Fluid Power Transmission and Control, Yanshan University, Qinhuangdao, 066004, P.R. China
- School of Mechanical Engineering, Yanshan University, Qinhuangdao, 066004, P.R. China
| | - Chao Ai
- Hebei Provincial Key Laboratory of Heavy Machinery Fluid Power Transmission and Control, Yanshan University, Qinhuangdao, 066004, P.R. China
- School of Mechanical Engineering, Yanshan University, Qinhuangdao, 066004, P.R. China
- Key Laboratory of Advanced Forging & Stamping Technology and Science (Yanshan University), Ministry of Education of China, Qinhuangdao, 066004, P.R. China
| | - Wenting Chen
- Hebei Provincial Key Laboratory of Heavy Machinery Fluid Power Transmission and Control, Yanshan University, Qinhuangdao, 066004, P.R. China
- School of Mechanical Engineering, Yanshan University, Qinhuangdao, 066004, P.R. China
- Key Laboratory of Advanced Forging & Stamping Technology and Science (Yanshan University), Ministry of Education of China, Qinhuangdao, 066004, P.R. China
| | - Jinpeng Zhen
- Hebei Provincial Key Laboratory of Heavy Machinery Fluid Power Transmission and Control, Yanshan University, Qinhuangdao, 066004, P.R. China
- School of Mechanical Engineering, Yanshan University, Qinhuangdao, 066004, P.R. China
| | - Xiangdong Kong
- Hebei Provincial Key Laboratory of Heavy Machinery Fluid Power Transmission and Control, Yanshan University, Qinhuangdao, 066004, P.R. China
- School of Mechanical Engineering, Yanshan University, Qinhuangdao, 066004, P.R. China
- Key Laboratory of Advanced Forging & Stamping Technology and Science (Yanshan University), Ministry of Education of China, Qinhuangdao, 066004, P.R. China
| | - Yunhong Jiang
- Hub for Biotechnology in the Built Environment, Department of Applied Sciences, Northumbria University, Newcastle, NE1 8ST, UK
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19
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Rizzato R, Schalk M, Mohr S, Hermann JC, Leibold JP, Bruckmaier F, Salvitti G, Qian C, Ji P, Astakhov GV, Kentsch U, Helm M, Stier AV, Finley JJ, Bucher DB. Extending the coherence of spin defects in hBN enables advanced qubit control and quantum sensing. Nat Commun 2023; 14:5089. [PMID: 37607945 PMCID: PMC10444786 DOI: 10.1038/s41467-023-40473-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2023] [Accepted: 07/26/2023] [Indexed: 08/24/2023] Open
Abstract
Negatively-charged boron vacancy centers ([Formula: see text]) in hexagonal Boron Nitride (hBN) are attracting increasing interest since they represent optically-addressable qubits in a van der Waals material. In particular, these spin defects have shown promise as sensors for temperature, pressure, and static magnetic fields. However, their short spin coherence time limits their scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by two orders of magnitude, approaching the fundamental T1 relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect radiofrequency signals with sub-Hz resolution. The corresponding sensitivity is benchmarked against that of state-of-the-art NV-diamond quantum sensors. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures.
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Affiliation(s)
- Roberto Rizzato
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany.
- University of Bari, Department of Physics "M. Merlin", Via Amendola 173, Bari, 70125, Italy.
| | - Martin Schalk
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Stephan Mohr
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
| | - Jens C Hermann
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Joachim P Leibold
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, James-Franck-Str. 1, Garching bei München, 85748, Germany
| | - Fleming Bruckmaier
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
| | - Giovanna Salvitti
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
- University of Bologna, Department of Chemistry "G. Ciamician", Via Selmi, 2, Bologna, 40126, Italy
| | - Chenjiang Qian
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
| | - Peirui Ji
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
| | - Georgy V Astakhov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden, 01328, Germany
| | - Ulrich Kentsch
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden, 01328, Germany
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden, 01328, Germany
- TU Dresden, 01062, Dresden, Germany
| | - Andreas V Stier
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Jonathan J Finley
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Dominik B Bucher
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany.
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany.
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20
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Kim SH, Park KH, Lee YG, Kang SJ, Park Y, Kim YD. Color Centers in Hexagonal Boron Nitride. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2344. [PMID: 37630929 PMCID: PMC10458833 DOI: 10.3390/nano13162344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 08/10/2023] [Accepted: 08/13/2023] [Indexed: 08/27/2023]
Abstract
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.
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Affiliation(s)
- Suk Hyun Kim
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Kyeong Ho Park
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
| | - Young Gie Lee
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
| | - Seong Jun Kang
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17101, Republic of Korea;
| | - Yongsup Park
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Young Duck Kim
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
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21
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Sánchez Arribas I, Taniguchi T, Watanabe K, Weig EM. Radiation Pressure Backaction on a Hexagonal Boron Nitride Nanomechanical Resonator. NANO LETTERS 2023; 23:6301-6307. [PMID: 37460106 PMCID: PMC10375595 DOI: 10.1021/acs.nanolett.3c00544] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Hexagonal boron nitride (hBN) is a van der Waals material with excellent mechanical properties hosting quantum emitters and optically active spin defects, with several of them being sensitive to strain. Establishing optomechanical control of hBN will enable hybrid quantum devices that combine the spin degree of freedom with the cavity optomechanical toolbox. In this Letter, we report the first observation of radiation pressure backaction at telecom wavelengths with a hBN drum-head mechanical resonator. The thermomechanical motion of the resonator is coupled to the optical mode of a high finesse fiber-based Fabry-Pérot microcavity in a membrane-in-the-middle configuration. We are able to resolve the optical spring effect and optomechanical damping with a single photon coupling strength of g0/2π = 1200 Hz. Our results pave the way for tailoring the mechanical properties of hBN resonators with light.
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Affiliation(s)
- Irene Sánchez Arribas
- Department of Electrical Engineering, School of Computation, Information and Technology, Technical University of Munich, 85748 Garching, Germany
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Eva M Weig
- Department of Electrical Engineering, School of Computation, Information and Technology, Technical University of Munich, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), 80799 Munich, Germany
- TUM Center for Quantum Engineering (ZQE), 85748 Garching, Germany
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22
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Robertson IO, Scholten SC, Singh P, Healey AJ, Meneses F, Reineck P, Abe H, Ohshima T, Kianinia M, Aharonovich I, Tetienne JP. Detection of Paramagnetic Spins with an Ultrathin van der Waals Quantum Sensor. ACS NANO 2023. [PMID: 37406158 DOI: 10.1021/acsnano.3c01678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/07/2023]
Abstract
Detecting magnetic noise from small quantities of paramagnetic spins is a powerful capability for chemical, biochemical, and medical analysis. Quantum sensors based on optically addressable spin defects in bulk semiconductors are typically employed for such purposes, but the 3D crystal structure of the sensor inhibits sensitivity by limiting the proximity of the defects to the target spins. Here we demonstrate the detection of paramagnetic spins using spin defects hosted in hexagonal boron nitride (hBN), a van der Waals material that can be exfoliated into the 2D regime. We first create negatively charged boron vacancy (VB-) defects in a powder of ultrathin hBN nanoflakes (<10 atomic monolayers thick on average) and measure the longitudinal spin relaxation time (T1) of this system. We then decorate the dry hBN nanopowder with paramagnetic Gd3+ ions and observe a clear T1 quenching under ambient conditions, consistent with the added magnetic noise. Finally, we demonstrate the possibility of performing spin measurements, including T1 relaxometry using solution-suspended hBN nanopowder. Our results highlight the potential and versatility of the hBN quantum sensor for a range of sensing applications and make steps toward the realization of a truly 2D, ultrasensitive quantum sensor.
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Affiliation(s)
- Islay O Robertson
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Sam C Scholten
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Priya Singh
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Alexander J Healey
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Fernando Meneses
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Philipp Reineck
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
- ARC Centre of Excellence for Nanoscale BioPhotonics, RMIT University, Melbourne, Victoria 3001, Australia
| | - Hiroshi Abe
- National Institutes for Quantum Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Takeshi Ohshima
- National Institutes for Quantum Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
- Department of Materials Science, Tohoku University, Sendai, 980-8579, Japan
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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23
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Zhou F, Jiang Z, Liang H, Ru S, Bettiol AA, Gao W. DC Magnetic Field Sensitivity Optimization of Spin Defects in Hexagonal Boron Nitride. NANO LETTERS 2023. [PMID: 37364230 DOI: 10.1021/acs.nanolett.3c01881] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2023]
Abstract
Spin defects existing in van der Waals materials attract wide attention thanks to their natural advantages for in situ quantum sensing, especially the negatively charged boron vacancy (VB-) centers in hexagonal boron nitride (h-BN). Here we systematically investigate the laser and microwave power broadening in continuous-wave optically detected magnetic resonance (ODMR) of the VB- ensemble in h-BN, by revealing the behaviors of ODMR contrast and line width as a function of the laser and microwave powers. The experimental results are well explained by employing a two-level simplified model of ODMR dynamics. Furthermore, with optimized power, the DC magnetic field sensitivity of VB- ensemble is significantly improved up to 2.87 ± ± 0.07 μT/Hz. Our results provide important suggestions for further applications of VB- centers in quantum information processing and ODMR-based quantum sensing.
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Affiliation(s)
- Feifei Zhou
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Zhengzhi Jiang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Haidong Liang
- Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Shihao Ru
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Andrew A Bettiol
- Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
- Centre for Quantum Technologies, National University of Singapore, Singapore 117543, Singapore
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24
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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25
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Gong R, He G, Gao X, Ju P, Liu Z, Ye B, Henriksen EA, Li T, Zu C. Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride. Nat Commun 2023; 14:3299. [PMID: 37280252 DOI: 10.1038/s41467-023-39115-y] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Accepted: 05/26/2023] [Indexed: 06/08/2023] Open
Abstract
Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy ([Formula: see text]) centers in hexagonal boron nitride (hBN) with varying defect density. By employing advanced dynamical decoupling sequences to selectively isolate different dephasing sources, we observe more than 5-fold improvement in the measured coherence times across all hBN samples. Crucially, we identify that the many-body interaction within the [Formula: see text] ensemble plays a substantial role in the coherent dynamics, which is then used to directly estimate the concentration of [Formula: see text]. We find that at high ion implantation dosage, only a small portion of the created boron vacancy defects are in the desired negatively charged state. Finally, we investigate the spin response of [Formula: see text] to the local charged defects induced electric field signals, and estimate its ground state transverse electric field susceptibility. Our results provide new insights on the spin and charge properties of [Formula: see text], which are important for future use of defects in hBN as quantum sensors and simulators.
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Affiliation(s)
- Ruotian Gong
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Guanghui He
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Peng Ju
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Zhongyuan Liu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Bingtian Ye
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Erik A Henriksen
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Chong Zu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA.
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA.
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26
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Guo NJ, Li S, Liu W, Yang YZ, Zeng XD, Yu S, Meng Y, Li ZP, Wang ZA, Xie LK, Ge RC, Wang JF, Li Q, Xu JS, Wang YT, Tang JS, Gali A, Li CF, Guo GC. Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature. Nat Commun 2023; 14:2893. [PMID: 37210408 DOI: 10.1038/s41467-023-38672-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2022] [Accepted: 05/10/2023] [Indexed: 05/22/2023] Open
Abstract
Hexagonal boron nitride (hBN) is a remarkable two-dimensional (2D) material that hosts solid-state spins and has great potential to be used in quantum information applications, including quantum networks. However, in this application, both the optical and spin properties are crucial for single spins but have not yet been discovered simultaneously for hBN spins. Here, we realize an efficient method for arraying and isolating the single defects of hBN and use this method to discover a new spin defect with a high probability of 85%. This single defect exhibits outstanding optical properties and an optically controllable spin, as indicated by the observed significant Rabi oscillation and Hahn echo experiments at room temperature. First principles calculations indicate that complexes of carbon and oxygen dopants may be the origin of the single spin defects. This provides a possibility for further addressing spins that can be optically controlled.
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Affiliation(s)
- Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Song Li
- Wigner Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary
| | - Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Xiao-Dong Zeng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Lin-Ke Xie
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Rong-Chun Ge
- College of Physics, Sichuan University, Chengdu, 610064, China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
- College of Physics, Sichuan University, Chengdu, 610064, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Adam Gali
- Wigner Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary.
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Muegyetem rakpart 3, H-1111Budapest, Hungary.
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
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27
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Cai H, Ru S, Jiang Z, Eng JJH, He R, Li FL, Miao Y, Zúñiga-Pérez J, Gao W. Spin Defects in hBN assisted by Metallic Nanotrenches for Quantum Sensing. NANO LETTERS 2023. [PMID: 37205843 DOI: 10.1021/acs.nanolett.3c00849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
The omnipresence of hexagonal boron nitride (hBN) in devices embedding two-dimensional materials has prompted it as the most sought after platform to implement quantum sensing due to its testing while operating capability. The negatively charged boron vacancy (VB-) in hBN plays a prominent role, as it can be easily generated while its spin population can be initialized and read out by optical means at room-temperature. But the lower quantum yield hinders its widespread use as an integrated quantum sensor. Here, we demonstrate an emission enhancement amounting to 400 by nanotrench arrays compatible with coplanar waveguide (CPW) electrodes employed for spin-state detection. By monitoring the reflectance spectrum of the resonators as additional layers of hBN are transferred, we have optimized the overall hBN/nanotrench optical response, maximizing thereby the luminescence enhancement. Based on these finely tuned heterostructures, we achieved an enhanced DC magnetic field sensitivity as high as 6 × 10-5 T/Hz1/2.
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Affiliation(s)
- Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
| | - Shihao Ru
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhengzhi Jiang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - John Jun Hong Eng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore
| | - Ruihua He
- School of Biological Sciences, Nanyang Technological University, Singapore 637551, Singapore
| | - Fu-Li Li
- School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yansong Miao
- School of Biological Sciences, Nanyang Technological University, Singapore 637551, Singapore
| | - Jesús Zúñiga-Pérez
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore 637551, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
- MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore 637551, Singapore
- Centre for Quantum Technologies, National University of Singapore, Singapore 117543, Singapore
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28
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Biswas A, Maiti R, Lee F, Chen CY, Li T, Puthirath AB, Iyengar SA, Li C, Zhang X, Kannan H, Gray T, Saadi MASR, Elkins J, Birdwell AG, Neupane MR, Shah PB, Ruzmetov DA, Ivanov TG, Vajtai R, Zhao Y, Gaeta AL, Tripathi M, Dalton A, Ajayan PM. Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications. NANOSCALE HORIZONS 2023; 8:641-651. [PMID: 36880586 DOI: 10.1039/d2nh00557c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. Low temperature growth supersedes the requirement of elevated growth temperatures accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of the functional properties and the consequent deterioration of the device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process, which exhibited various functional properties for potential applications. Comprehensive chemical, spectroscopic and microscopic characterizations confirmed the growth of ordered nanosheet-like hexagonal BN (h-BN). Functionally, the nanosheets show hydrophobicity, high lubricity (low coefficient of friction), and a low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of potential applications for these room temperature grown h-BN nanosheets as the synthesis can be feasible on any given substrate, thus creating a scenario for "h-BN on demand" under a frugal thermal budget.
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Affiliation(s)
- Abhijit Biswas
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Rishi Maiti
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, 10027, USA.
| | - Frank Lee
- Department of Physics and Astronomy, University of Sussex, Brighton BN1 9RH, UK.
| | - Cecilia Y Chen
- Department of Electrical Engineering, Columbia University, New York, 10027, USA
| | - Tao Li
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
| | - Anand B Puthirath
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Sathvik Ajay Iyengar
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Chenxi Li
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Xiang Zhang
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Harikishan Kannan
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Tia Gray
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | | | - Jacob Elkins
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - A Glen Birdwell
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Mahesh R Neupane
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Pankaj B Shah
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Dmitry A Ruzmetov
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Tony G Ivanov
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Robert Vajtai
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Yuji Zhao
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
| | - Alexander L Gaeta
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, 10027, USA.
- Department of Electrical Engineering, Columbia University, New York, 10027, USA
| | - Manoj Tripathi
- Department of Physics and Astronomy, University of Sussex, Brighton BN1 9RH, UK.
| | - Alan Dalton
- Department of Physics and Astronomy, University of Sussex, Brighton BN1 9RH, UK.
| | - Pulickel M Ajayan
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
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29
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Han G, Li M, He L, Xu A, Chen X, Yang W, Liu Y, Yu Y. In situ annealing achieves an ultrafast synthesis of high coercive strontium ferrite foams and beyond. NANOSCALE 2023; 15:7466-7471. [PMID: 37016770 DOI: 10.1039/d3nr00633f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Strontium ferrite nanostructures have attracted intensive interest recently due to the increasing demand for cost-effective features and good chemical corrosion resistance of magnetic materials, yet the ultrafast synthesis of strontium ferrite with desired coercivity is still experiencing a severe challenge. Herein, porous strontium ferrite foams with a coercivity up to 23.35 kOe were prepared by ultrafast in situ annealing for 1 min based on an auto-combustion strategy. The high coercivity of strontium ferrite benefits from the increasing magnetocrystalline anisotropy caused by the ion substitution and the appropriate grain size close to the critical single-domain size of strontium ferrite. In addition, this ultrafast synthesis can be extended to prepare a series of porous spinel, lanthanide-based perovskites, and their high-entropy counterpart foams. We also demonstrate that this strategy is feasible for preparing biphasic composite oxide foams. Furthermore, this work provides important guidance for the design of porous permanent magnet materials and the efficient preparation of porous oxide foam materials.
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Affiliation(s)
- Guanghui Han
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China.
| | - Menggang Li
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China.
| | - Lin He
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China.
| | - Ao Xu
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China.
| | - Xiaolong Chen
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China.
| | - Weiwei Yang
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China.
| | - Yequn Liu
- Analytical Instrumentation Center, State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan, Shanxi 030001, China.
| | - Yongsheng Yu
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China.
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30
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Chandrasekaran V, Titze M, Flores AR, Campbell D, Henshaw J, Jones AC, Bielejec ES, Htoon H. High-Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2300190. [PMID: 37088736 DOI: 10.1002/advs.202300190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 03/25/2023] [Indexed: 05/03/2023]
Abstract
Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created-a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.
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Affiliation(s)
- Vigneshwaran Chandrasekaran
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Michael Titze
- Sandia National Laboratories, Albuquerque, NM, 87123, USA
| | | | | | - Jacob Henshaw
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87123, USA
| | - Andrew C Jones
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | | | - Han Htoon
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
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31
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Lock EH, Lee J, Choi DS, Bedford RG, Karna SP, Roy AK. Materials Innovations for Quantum Technology Acceleration: A Perspective. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2201064. [PMID: 37021584 DOI: 10.1002/adma.202201064] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2022] [Revised: 01/16/2023] [Indexed: 06/19/2023]
Abstract
A broad perspective of quantum technology state of the art is provided and critical stumbling blocks for quantum technology development are identified. Innovations in demonstrating and understanding electron entanglement phenomena using bulk and low-dimensional materials and structures are summarized. Correlated photon-pair generation via processes such as nonlinear optics is discussed. Application of qubits to current and future high-impact quantum technology development is presented. Approaches for realizing unique qubit features for large-scale encrypted communication, sensing, computing, and other technologies are still evolving; thus, materials innovation is crucially important. A perspective on materials modeling approaches for quantum technology acceleration that incorporate physics-based AI/ML, integrated with quantum metrology is discussed.
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Affiliation(s)
- Evgeniya H Lock
- Materials Science and Technology Division, U. S. Naval Research Laboratory, Washington, DC, 20375, USA
| | - Jonghoon Lee
- Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXAN, 2179 12th St, WPAFB, OH, 45433, USA
- ARCTOS Technology Solutions, 1270 N Fairfield Rd, Beavercreek, OH, 45432, USA
| | - Daniel S Choi
- DEVCOM Army Research Laboratory, Weapons and Materials Research Directorate, FCDD-RLW, Aberdeen Proving Ground, Beavercreek, MD, 21015, USA
| | - Robert G Bedford
- Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXAN, 2179 12th St, WPAFB, OH, 45433, USA
| | - Shashi P Karna
- DEVCOM Army Research Laboratory, Weapons and Materials Research Directorate, FCDD-RLW, Aberdeen Proving Ground, Beavercreek, MD, 21015, USA
| | - Ajit K Roy
- Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXAN, 2179 12th St, WPAFB, OH, 45433, USA
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32
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Coherence protection of spin qubits in hexagonal boron nitride. Nat Commun 2023; 14:461. [PMID: 36709208 PMCID: PMC9884286 DOI: 10.1038/s41467-023-36196-7] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2022] [Accepted: 01/17/2023] [Indexed: 01/29/2023] Open
Abstract
Spin defects in foils of hexagonal boron nitride are an attractive platform for magnetic field imaging, since the probe can be placed in close proximity to the target. However, as a III-V material the electron spin coherence is limited by the nuclear spin environment, with spin echo coherence times of ∽100 ns at room temperature accessible magnetic fields. We use a strong continuous microwave drive with a modulation in order to stabilize a Rabi oscillation, extending the coherence time up to ∽ 4μs, which is close to the 10 μs electron spin lifetime in our sample. We then define a protected qubit basis, and show full control of the protected qubit. The coherence times of a superposition of the protected qubit can be as high as 0.8 μs. This work establishes that boron vacancies in hexagonal boron nitride can have electron spin coherence times that are competitive with typical nitrogen vacancy centres in small nanodiamonds under ambient conditions.
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33
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Xu X, Solanki AB, Sychev D, Gao X, Peana S, Baburin AS, Pagadala K, Martin ZO, Chowdhury SN, Chen YP, Taniguchi T, Watanabe K, Rodionov IA, Kildishev AV, Li T, Upadhyaya P, Boltasseva A, Shalaev VM. Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nanocavity. NANO LETTERS 2023; 23:25-33. [PMID: 36383034 DOI: 10.1021/acs.nanolett.2c03100] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The negatively charged boron vacancy (VB-) defect in hexagonal boron nitride (hBN) with optically addressable spin states has emerged due to its potential use in quantum sensing. Remarkably, VB- preserves its spin coherence when it is implanted at nanometer-scale distances from the hBN surface, potentially enabling ultrathin quantum sensors. However, its low quantum efficiency hinders its practical applications. Studies have reported improving the overall quantum efficiency of VB- defects with plasmonics; however, the overall enhancements of up to 17 times reported to date are relatively modest. Here, we demonstrate much higher emission enhancements of VB- with low-loss nanopatch antennas (NPAs). An overall intensity enhancement of up to 250 times is observed, corresponding to an actual emission enhancement of ∼1685 times by the NPA, along with preserved optically detected magnetic resonance contrast. Our results establish NPA-coupled VB- defects as high-resolution magnetic field sensors and provide a promising approach to obtaining single VB- defects.
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Affiliation(s)
- Xiaohui Xu
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
| | - Abhishek B Solanki
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Demid Sychev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
| | - Samuel Peana
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Aleksandr S Baburin
- FMN Laboratory, Bauman Moscow State Technical University, Moscow105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow127055, Russia
| | - Karthik Pagadala
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Zachariah O Martin
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Sarah N Chowdhury
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Yong P Chen
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, 8000Aarhus-C, Denmark
- WPI-AIMR International Research Center for Materials Sciences, Tohoku University, Sendai980-8577, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Ilya A Rodionov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow127055, Russia
| | - Alexander V Kildishev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
| | - Tongcang Li
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
| | - Pramey Upadhyaya
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Alexandra Boltasseva
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Vladimir M Shalaev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
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Kozawa D, Li SX, Ichihara T, Rajan AG, Gong X, He G, Koman VB, Zeng Y, Kuehne M, Silmore KS, Parviz D, Liu P, Liu AT, Faucher S, Yuan Z, Warner J, Blankschtein D, Strano MS. Discretized hexagonal boron nitride quantum emitters and their chemical interconversion. NANOTECHNOLOGY 2023; 34:115702. [PMID: 36595236 DOI: 10.1088/1361-6528/aca984] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2022] [Accepted: 12/06/2022] [Indexed: 06/17/2023]
Abstract
Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are of significant interest because of their unique photophysical properties, such as single-photon emission at room temperature, and promising applications in quantum computing and communications. The photoemission from hBN defects covers a wide range of emission energies but identifying and modulating the properties of specific emitters remain challenging due to uncontrolled formation of hBN defects. In this study, more than 2000 spectra are collected consisting of single, isolated zero-phonon lines (ZPLs) between 1.59 and 2.25 eV from diverse sample types. Most of ZPLs are organized into seven discretized emission energies. All emitters exhibit a range of lifetimes from 1 to 6 ns, and phonon sidebands offset by the dominant lattice phonon in hBN near 1370 cm-1. Two chemical processing schemes are developed based on water and boric acid etching that generate or preferentially interconvert specific emitters, respectively. The identification and chemical interconversion of these discretized emitters should significantly advance the understanding of solid-state chemistry and photophysics of hBN quantum emission.
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Affiliation(s)
- Daichi Kozawa
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
- Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama 3510198, Japan
| | - Sylvia Xin Li
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Takeo Ichihara
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
- Energy and System R&D Department, Chemistry and Chemical Process Laboratory, Corporate R&D, Asahi Kasei Corporation, Kurashiki, Okayama 7118510, Japan
| | - Ananth Govind Rajan
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
- Department of Chemical Engineering, Indian Institute of Science, Bengaluru, Karnataka 560012, India
| | - Xun Gong
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Guangwei He
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Volodymyr B Koman
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Yuwen Zeng
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Matthias Kuehne
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Kevin S Silmore
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Dorsa Parviz
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Pingwei Liu
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
- College of Chemical and Biological Engineering, Zhejiang University, Hangzhou, Zhejiang Province 310027, People's Republic of China
| | - Albert Tianxiang Liu
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
- Department of Chemical Engineering, University of Michigan, Ann Arbor, MI 48109, United States of America
| | - Samuel Faucher
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Zhe Yuan
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Jamie Warner
- Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712, United States of America
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, United States of America
| | - Daniel Blankschtein
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Michael S Strano
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
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35
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Aharonovich I, Tetienne JP, Toth M. Quantum Emitters in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:9227-9235. [PMID: 36413674 DOI: 10.1021/acs.nanolett.2c03743] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (hBN) has emerged as a fascinating platform to explore quantum emitters and their applications. Beyond being a wide-bandgap material, it is also a van der Waals crystal, enabling direct exfoliation of atomically thin layers─a combination which offers unique advantages over bulk, 3D crystals. In this Mini Review we discuss the unique properties of hBN quantum emitters and highlight progress toward their future implementation in practical devices. We focus on engineering and integration of the emitters with scalable photonic resonators. We also highlight recently discovered spin defects in hBN and discuss their potential utility for quantum sensing. All in all, hBN has become a front runner in explorations of solid-state quantum science with promising future prospects.
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Affiliation(s)
- Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | | | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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36
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Nonahal M, Li C, Tjiptoharsono F, Ding L, Stewart C, Scott J, Toth M, Ha ST, Kianinia M, Aharonovich I. Coupling spin defects in hexagonal boron nitride to titanium dioxide ring resonators. NANOSCALE 2022; 14:14950-14955. [PMID: 36069362 DOI: 10.1039/d2nr02522a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Spin-dependent optical transitions are attractive for a plethora of applications in quantum technologies. Here we report on utilization of high quality ring resonators fabricated from TiO2 to enhance the emission from negatively charged boron vacancies (VB-) in hexagonal Boron Nitride. We show that the emission from these defects can efficiently couple into the whispering gallery modes of the ring resonators. Optically coupled VB- showed photoluminescence contrast in optically detected magnetic resonance signals from the hybrid coupled devices. Our results demonstrate a practical method for integration of spin defects in 2D materials with dielectric resonators which is a promising platform for quantum technologies.
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Affiliation(s)
- Milad Nonahal
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Chi Li
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Febiana Tjiptoharsono
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Kinesis, 138635 Singapore
| | - Lu Ding
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Kinesis, 138635 Singapore
| | - Connor Stewart
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - John Scott
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Son Tung Ha
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Kinesis, 138635 Singapore
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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37
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Akbari H, Biswas S, Jha PK, Wong J, Vest B, Atwater HA. Lifetime-Limited and Tunable Quantum Light Emission in h-BN via Electric Field Modulation. NANO LETTERS 2022; 22:7798-7803. [PMID: 36154175 DOI: 10.1021/acs.nanolett.2c02163] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Color-center-based single-photon emitters in hexagonal boron nitride (h-BN) have shown promising photophysical properties as sources for quantum light emission. Despite significant advances toward such a goal, achieving lifetime-limited quantum light emission in h-BN has proven to be challenging, primarily due to various broadening mechanisms, including spectral diffusion. Here, we propose and experimentally demonstrate suppression of spectral diffusion by applying an electrostatic field. We observe both Stark shift tuning of the resonant emission wavelength and emission line width reduction (down to 89 MHz) nearly to the homogeneously broadened lifetime limit. Finally, we find a cubic dependence of the line width with respect to temperature at the homogeneous broadening regime. Our results suggest that field tuning in electrostatically gated heterostructures is promising as an approach to control the emission characteristics of h-BN color centers, removing spectral diffusion and providing the energy tunability necessary for integrate of quantum light emission in nanophotonic architectures.
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Affiliation(s)
- Hamidreza Akbari
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California, 91106, United States
| | - Souvik Biswas
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California, 91106, United States
| | - Pankaj Kumar Jha
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California, 91106, United States
| | - Joeson Wong
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California, 91106, United States
| | - Benjamin Vest
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California, 91106, United States
- Université Paris-Saclay, Institut d'Optique Graduate School, CNRS, Laboratoire Charles Fabry, 91127 Palaiseau, France
| | - Harry A Atwater
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California, 91106, United States
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38
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Mondal M, Dash AK, Singh A. Optical Microscope Based Universal Parameter for Identifying Layer Number in Two-Dimensional Materials. ACS NANO 2022; 16:14456-14462. [PMID: 36074897 DOI: 10.1021/acsnano.2c04833] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Optical contrast is the most common preliminary method to identify layer number of two-dimensional (2D) materials, but it is seldom used as a confirmatory technique. We explain the reason for variation of optical contrast between imaging systems, motivating system-independent measurement of optical contrast as a critical need. We describe a universal method to quantify the layer number using the RGB (red-green-blue) and RAW optical images. For RGB images, the slope of 2D flake (MoS2, WSe2, graphene) intensity vs substrate intensity is extracted from optical images with varying lamp power. The intensity slope identifies layer number and is system independent. For RAW images, intensity slopes and intensity ratios are completely system and intensity independent. Intensity slope (for RGB) and intensity ratio (for RAW) are thus universal parameters for identifying layer number. The RAW format is not present in all imaging systems, but it can confirm layer number using a single optical image, making it a rapid and system-independent universal method. A Fresnel-reflectance-based optical model provides an excellent match with experiments. Furthermore, we have created a MATLAB-based graphical user interface that can identify layer number rapidly. This technique is expected to accelerate the preparation of heterostructures and to fulfill a prolonged need for universal optical contrast method.
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Affiliation(s)
- Mainak Mondal
- Department of Physics, Indian Institute of Science, Bengaluru 560012, India
| | - Ajit K Dash
- Department of Physics, Indian Institute of Science, Bengaluru 560012, India
| | - Akshay Singh
- Department of Physics, Indian Institute of Science, Bengaluru 560012, India
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39
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Huang M, Zhou J, Chen D, Lu H, McLaughlin NJ, Li S, Alghamdi M, Djugba D, Shi J, Wang H, Du CR. Wide field imaging of van der Waals ferromagnet Fe3GeTe2 by spin defects in hexagonal boron nitride. Nat Commun 2022; 13:5369. [PMID: 36100604 PMCID: PMC9470674 DOI: 10.1038/s41467-022-33016-2] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Accepted: 08/26/2022] [Indexed: 11/26/2022] Open
Abstract
Emergent color centers with accessible spins hosted by van der Waals materials have attracted substantial interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Hexagonal boron nitride (hBN) is naturally relevant in this context due to its remarkable ease of integration into devices consisting of low-dimensional materials. Taking advantage of boron vacancy spin defects in hBN, we report nanoscale quantum imaging of low-dimensional ferromagnetism sustained in Fe3GeTe2/hBN van der Waals heterostructures. Exploiting spin relaxometry methods, we have further observed spatially varying magnetic fluctuations in the exfoliated Fe3GeTe2 flake, whose magnitude reaches a peak value around the Curie temperature. Our results demonstrate the capability of spin defects in hBN of investigating local magnetic properties of layered materials in an accessible and precise way, which can be extended readily to a broad range of miniaturized van der Waals heterostructure systems. Hexagonal boron nitride (h-BN) has been used extensively to encapsulate other van der Waals materials, protecting them from environmental degradation, and allowing integration into more complex heterostructures. Here, the authors make use of boron vacancy spin defects in h-BN using them to image the magnetic properties of a Fe3GeTe2 flake.
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40
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Gao X, Vaidya S, Li K, Ju P, Jiang B, Xu Z, Allcca AEL, Shen K, Taniguchi T, Watanabe K, Bhave SA, Chen YP, Ping Y, Li T. Nuclear spin polarization and control in hexagonal boron nitride. NATURE MATERIALS 2022; 21:1024-1028. [PMID: 35970964 DOI: 10.1038/s41563-022-01329-8] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Accepted: 07/07/2022] [Indexed: 06/15/2023]
Abstract
Electron spins in van der Waals materials are playing a crucial role in recent advances in condensed-matter physics and spintronics. However, nuclear spins in van der Waals materials remain an unexplored quantum resource. Here we report optical polarization and coherent control of nuclear spins in a van der Waals material at room temperature. We use negatively charged boron vacancy ([Formula: see text]) spin defects in hexagonal boron nitride to polarize nearby nitrogen nuclear spins. We observe the Rabi frequency of nuclear spins at the excited-state level anti-crossing of [Formula: see text] defects to be 350 times larger than that of an isolated nucleus, and demonstrate fast coherent control of nuclear spins. Further, we detect strong electron-mediated nuclear-nuclear spin coupling that is five orders of magnitude larger than the direct nuclear-spin dipolar coupling, enabling multi-qubit operations. Our work opens new avenues for the manipulation of nuclear spins in van der Waals materials for quantum information science and technology.
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Affiliation(s)
- Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Sumukh Vaidya
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Kejun Li
- Department of Physics, University of California, Santa Cruz, CA, USA
| | - Peng Ju
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Boyang Jiang
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
| | - Zhujing Xu
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | | | - Kunhong Shen
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Sunil A Bhave
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - Yong P Chen
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
- WPI-AIMR International Research Center for Materials Sciences, Tohoku University, Sendai, Japan
| | - Yuan Ping
- Department of Chemistry and Biochemistry, University of California, Santa Cruz, CA, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA.
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA.
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA.
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA.
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41
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Lyu X, Tan Q, Wu L, Zhang C, Zhang Z, Mu Z, Zúñiga-Pérez J, Cai H, Gao W. Strain Quantum Sensing with Spin Defects in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:6553-6559. [PMID: 35960708 DOI: 10.1021/acs.nanolett.2c01722] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Hexagonal boron nitride is not only a promising functional material for the development of two-dimensional optoelectronic devices but also a good candidate for quantum sensing thanks to the presence of quantum emitters in the form of atom-like defects. Their exploitation in quantum technologies necessitates understanding their coherence properties as well as their sensitivity to external stimuli. In this work, we probe the strain configuration of boron vacancy centers (VB-) created by ion implantation in h-BN flakes thanks to wide-field spatially resolved optically detected magnetic resonance and submicro Raman spectroscopy. Our experiments demonstrate the ability of VB- for quantum sensing of strain and, given the omnipresence of h-BN in 2D-based devices, open the door for in situ imaging of strain under working conditions.
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Affiliation(s)
- Xiaodan Lyu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, 637371, Singapore
| | - Qinghai Tan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Lishu Wu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Chusheng Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Zhao Mu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Jesús Zúñiga-Pérez
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
- MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, 637371, Singapore
| | - Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, 637371, Singapore
- Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543, Singapore
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42
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Qian C, Villafañe V, Schalk M, Astakhov GV, Kentsch U, Helm M, Soubelet P, Wilson NP, Rizzato R, Mohr S, Holleitner AW, Bucher DB, Stier AV, Finley JJ. Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity-Enhanced Emission. NANO LETTERS 2022; 22:5137-5142. [PMID: 35758596 DOI: 10.1021/acs.nanolett.2c00739] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of the zero-phonon line (ZPL) of VB- has remained elusive. Here, we measure the room-temperature ZPL wavelength to be 773 ± 2 nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to VB-. Our observations are consistent with the spatial redistribution of VB- emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using VB- as cavity spin-photon interfaces.
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Affiliation(s)
- Chenjiang Qian
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Viviana Villafañe
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Martin Schalk
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - G V Astakhov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany
| | - Ulrich Kentsch
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany
| | - Pedro Soubelet
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Nathan P Wilson
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Roberto Rizzato
- Department of Chemistry, Technical University of Munich, Lichtenbergstrasse 4, Garching 85748, Germany
| | - Stephan Mohr
- Department of Chemistry, Technical University of Munich, Lichtenbergstrasse 4, Garching 85748, Germany
| | - Alexander W Holleitner
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Dominik B Bucher
- Department of Chemistry, Technical University of Munich, Lichtenbergstrasse 4, Garching 85748, Germany
| | - Andreas V Stier
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Jonathan J Finley
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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43
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Shi Z, Meng L, Shi X, Li H, Zhang J, Sun Q, Liu X, Chen J, Liu S. Morphological Engineering of Sensing Materials for Flexible Pressure Sensors and Artificial Intelligence Applications. NANO-MICRO LETTERS 2022; 14:141. [PMID: 35789444 PMCID: PMC9256895 DOI: 10.1007/s40820-022-00874-w] [Citation(s) in RCA: 42] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Accepted: 05/04/2022] [Indexed: 05/05/2023]
Abstract
Various morphological structures in pressure sensors with the resulting advanced sensing properties are reviewed comprehensively. Relevant manufacturing techniques and intelligent applications of pressure sensors are summarized in a complete and interesting way. Future challenges and perspectives of flexible pressure sensors are critically discussed.
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Affiliation(s)
- Zhengya Shi
- School of Materials Science and Engineering, Henan Key Laboratory of Advanced Nylon Materials and Application, Henan Innovation Center for Functional Polymer Membrane Materials, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Lingxian Meng
- School of Materials Science and Engineering, Henan Key Laboratory of Advanced Nylon Materials and Application, Henan Innovation Center for Functional Polymer Membrane Materials, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Xinlei Shi
- Wenzhou Institute, University of Chinese Academy of Sciences, Wenzhou, 352001, People's Republic of China
| | - Hongpeng Li
- School of Mechanical Engineering, Yangzhou University, Yangzhou, 225127, People's Republic of China
| | - Juzhong Zhang
- School of Materials Science and Engineering, Henan Key Laboratory of Advanced Nylon Materials and Application, Henan Innovation Center for Functional Polymer Membrane Materials, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Qingqing Sun
- School of Materials Science and Engineering, Henan Key Laboratory of Advanced Nylon Materials and Application, Henan Innovation Center for Functional Polymer Membrane Materials, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Xuying Liu
- School of Materials Science and Engineering, Henan Key Laboratory of Advanced Nylon Materials and Application, Henan Innovation Center for Functional Polymer Membrane Materials, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Jinzhou Chen
- School of Materials Science and Engineering, Henan Key Laboratory of Advanced Nylon Materials and Application, Henan Innovation Center for Functional Polymer Membrane Materials, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Shuiren Liu
- School of Materials Science and Engineering, Henan Key Laboratory of Advanced Nylon Materials and Application, Henan Innovation Center for Functional Polymer Membrane Materials, Zhengzhou University, Zhengzhou, 450001, People's Republic of China.
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44
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Mathur N, Mukherjee A, Gao X, Luo J, McCullian BA, Li T, Vamivakas AN, Fuchs GD. Excited-state spin-resonance spectroscopy of V[Formula: see text] defect centers in hexagonal boron nitride. Nat Commun 2022; 13:3233. [PMID: 35680866 PMCID: PMC9184587 DOI: 10.1038/s41467-022-30772-z] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2022] [Accepted: 05/14/2022] [Indexed: 11/17/2022] Open
Abstract
The recently discovered spin-active boron vacancy (V[Formula: see text]) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is suggestive of symmetry-lowering of the defect system from D3h to C2v. Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing.
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Affiliation(s)
- Nikhil Mathur
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY USA
| | | | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN USA
| | - Jialun Luo
- Department of Physics, Cornell University, Ithaca, NY USA
| | | | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN USA
| | - A. Nick Vamivakas
- The Institute of Optics, University of Rochester, Rochester, NY USA
- Materials Science, University of Rochester, Rochester, NY USA
- Department of Physics and Astronomy, University of Rochester, Rochester, NY USA
- Center for Coherence and Quantum Optics, University of Rochester, Rochester, NY USA
| | - Gregory D. Fuchs
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY USA
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45
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Yu P, Sun H, Wang M, Zhang T, Ye X, Zhou J, Liu H, Wang CJ, Shi F, Wang Y, Du J. Excited-State Spectroscopy of Spin Defects in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:3545-3549. [PMID: 35439014 DOI: 10.1021/acs.nanolett.1c04841] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A negatively charged boron vacancy (VB-) color center in hexagonal boron nitride has recently been proposed as a promising quantum sensor due to its excellent properties. However, the spin level structure of the VB- color center is still unclear, especially for the excited state. Here we measured and confirmed the excited-state spin transitions of VB- using an optically detected magnetic resonance (ODMR) technique. The zero-field splitting of the excited state is 2.06 GHz, the transverse splitting is 93.1 MHz, and the g factor is 2.04. Moreover, negative peaks in fluorescence intensity and ODMR contrast at the level anticrossing point were observed, and they further confirmed that the spin transitions we measured came from the excited state. Our work deepens the understanding of the excited-state structure of VB- and promotes VB--based quantum sensing applications.
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Affiliation(s)
- Pei Yu
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Haoyu Sun
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Mengqi Wang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Tao Zhang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Xiangyu Ye
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Jingwei Zhou
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Hangyu Liu
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Cheng-Jie Wang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Fazhan Shi
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Ya Wang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Jiangfeng Du
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
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46
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Murzakhanov FF, Mamin GV, Orlinskii SB, Gerstmann U, Schmidt WG, Biktagirov T, Aharonovich I, Gottscholl A, Sperlich A, Dyakonov V, Soltamov VA. Electron-Nuclear Coherent Coupling and Nuclear Spin Readout through Optically Polarized V B- Spin States in hBN. NANO LETTERS 2022; 22:2718-2724. [PMID: 35357842 DOI: 10.1021/acs.nanolett.1c04610] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- spin with a characteristic decay time Tcoh = 15 μs, close to the theoretically predicted limit of 18 μs for defects in hBN. Elongation of the coherence time up to 36 μs is demonstrated by means of the Carr-Purcell-Meiboom-Gill decoupling technique. Modulation of the Hahn-echo decay is shown to be induced by coherent coupling of the VB- spin with the three nearest 14N nuclei via a nuclear quadrupole interaction of 2.11 MHz. DFT calculation confirms that the electron-nuclear coupling is confined to the defective layer and stays almost unchanged with a transition from the bulk to the single layer.
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Affiliation(s)
| | | | | | - Uwe Gerstmann
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Wolf Gero Schmidt
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Timur Biktagirov
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Andreas Sperlich
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
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47
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Yang T, Mendelson N, Li C, Gottscholl A, Scott J, Kianinia M, Dyakonov V, Toth M, Aharonovich I. Spin defects in hexagonal boron nitride for strain sensing on nanopillar arrays. NANOSCALE 2022; 14:5239-5244. [PMID: 35315850 DOI: 10.1039/d1nr07919k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional hexagonal boron nitride (hBN) has attracted much attention as a platform for studies of light-matter interactions at the nanoscale, especially in quantum nanophotonics. Recent efforts have focused on spin defects, specifically negatively charged boron vacancy (VB-) centers. Here, we demonstrate a scalable method to enhance the VB- emission using an array of SiO2 nanopillars. We achieve a 4-fold increase in photoluminescence (PL) intensity, and a corresponding 4-fold enhancement in optically detected magnetic resonance (ODMR) contrast. Furthermore, the VB- ensembles provide useful information about the strain fields associated with the strained hBN at the nanopillar sites. Our results provide an accessible way to increase the emission intensity as well as the ODMR contrast of the VB- defects, while simultaneously form a basis for miniaturized quantum sensors in layered heterostructures.
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Affiliation(s)
- Tieshan Yang
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Noah Mendelson
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Chi Li
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - John Scott
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Milos Toth
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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48
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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49
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Guo NJ, Liu W, Li ZP, Yang YZ, Yu S, Meng Y, Wang ZA, Zeng XD, Yan FF, Li Q, Wang JF, Xu JS, Wang YT, Tang JS, Li CF, Guo GC. Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride. ACS OMEGA 2022; 7:1733-1739. [PMID: 35071868 PMCID: PMC8771700 DOI: 10.1021/acsomega.1c04564] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2021] [Accepted: 12/21/2021] [Indexed: 05/30/2023]
Abstract
Optically addressable spin defects in wide-band-gap semiconductors as promising systems for quantum information and sensing applications have recently attracted increased attention. Spin defects in two-dimensional materials are expected to show superiority in quantum sensing due to their atomic thickness. Here, we demonstrate that an ensemble of negatively charged boron vacancies (VB -) with good spin properties in hexagonal boron nitride (hBN) can be generated by ion implantation. We carry out optically detected magnetic resonance measurements at room temperature to characterize the spin properties of ensembles of VB - defects, showing a zero-field splitting frequency of ∼3.47 GHz. We compare the photoluminescence intensity and spin properties of VB - defects generated using different implantation parameters, such as fluence, energy, and ion species. With the use of the proper parameters, we can successfully create VB - defects with a high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for realizing integrated hBN-based devices.
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Affiliation(s)
- Nai-Jie Guo
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Wei Liu
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Shang Yu
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Yu Meng
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Xiao-Dong Zeng
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Qiang Li
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
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50
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Baber S, Malein RNE, Khatri P, Keatley PS, Guo S, Withers F, Ramsay AJ, Luxmoore IJ. Excited State Spectroscopy of Boron Vacancy Defects in Hexagonal Boron Nitride Using Time-Resolved Optically Detected Magnetic Resonance. NANO LETTERS 2022; 22:461-467. [PMID: 34958574 DOI: 10.1021/acs.nanolett.1c04366] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We report optically detected magnetic resonance (ODMR) measurements of an ensemble of spin-1 negatively charged boron vacancies in hexagonal boron nitride. The photoluminescence decay rates are spin-dependent, with intersystem crossing rates of 1.02 ns-1 and 2.03 ns-1 for the mS = 0 and mS = ±1 states, respectively. Time gating the photoluminescence enhances the ODMR contrast by discriminating between different decay rates. This is particularly effective for detecting the spin of the optically excited state, where a zero-field splitting of |DES| = 2.09 GHz is measured. The magnetic field dependence of the photoluminescence exhibits dips corresponding to the ground (GSLAC) and excited-state (ESLAC) anticrossings and additional anticrossings due to coupling with nearby spin-1/2 parasitic impurities. Comparison to a model suggests that the anticrossings are mediated by the interaction with nuclear spins and allows an estimate of the ratio of the singlet to triplet spin-dependent relaxation rates of κ0/κ1 = 0.34.
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Affiliation(s)
- Simon Baber
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | | | - Prince Khatri
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Paul Steven Keatley
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Shi Guo
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Freddie Withers
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Andrew J Ramsay
- Hitachi Cambridge Laboratory, Hitachi Europe Limited, Cambridge CB3 0HE, United Kingdom
| | - Isaac J Luxmoore
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
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