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Xie YM, Nagaosa N. Photon-drag photovoltaic effects and quantum geometric nature. Proc Natl Acad Sci U S A 2025; 122:e2424294122. [PMID: 40014566 DOI: 10.1073/pnas.2424294122] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/20/2024] [Accepted: 01/28/2025] [Indexed: 03/01/2025] Open
Abstract
The bulk photovoltaic effect (BPVE) generates a direct current photocurrent under uniform irradiation and is a nonlinear optical effect traditionally studied in noncentrosymmetric materials. The two main origins of BPVE are the shift and injection currents, arising from transitions in electron position and electron velocity during optical excitation, respectively. Recently, it was proposed that photon-drag effects could unlock BPVE in centrosymmetric materials. However, experimental progress remains limited. In this work, we provide a comprehensive theoretical analysis of photon-drag effects inducing BPVE (photon-drag BPVE). Notably, we find that photon-drag BPVE can be directly linked to quantum geometric tensors. Additionally, we propose that photon-drag shift currents can be fully isolated from other current contributions in nonmagnetic centrosymmetric materials. We apply our theory explicitly to the 2D topological insulator 1T'-WTe2. Furthermore, we investigate photon-drag BPVE in a centrosymmetric magnetic Weyl semimetal, where we demonstrate that linearly polarized light generates photon-drag shift currents.
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Affiliation(s)
- Ying-Ming Xie
- RIKEN Center for Emergent Matter Science, Wako 351-0198, Saitama, Japan
| | - Naoto Nagaosa
- RIKEN Center for Emergent Matter Science, Wako 351-0198, Saitama, Japan
- Fundamental Quantum Science Program, Transformative Research Innovation Platform Headquarters, RIKEN, Wako 351-0198, Japan
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2
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Tang K, Pan X, Dong Z, Yang L, Wang D, Hou X, Wang P, Fang Y, Wang J, Wang L, Zhang K. Sensitive and Anisotropic Room-Temperature Terahertz Photodetection in Quasi-1D Nodal-Line Semimetal NbNiTe 5. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2410701. [PMID: 39961065 DOI: 10.1002/smll.202410701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2024] [Revised: 02/05/2025] [Indexed: 03/28/2025]
Abstract
Low-dimensional topological materials merge the benefits of reduced dimensionality with the nontrivial topological phases, garnering significant attention as promising candidates for next-generation optoelectronic devices. The quasi-1D nodal-line semimetal NbNiTe5 showcases distinct in-plane anisotropy alongside robust Dirac nodal-line points, rendering it a fascinating platform for exploring the intricate interplay between novel quantum states of matter and low-energy radiation. Here, sensitive and anisotropic terahertz photodetection driven by Dirac fermions and the intrinsic anisotropic properties of NbNiTe5 are presented. Leveraging the enhanced carrier transport characteristics derived from nontrivial band topology, room-temperature responsivity of 1.36 A W-1, noise equivalent power of 5.31 × 10-11 W Hz-1/2 as well as fast photoresponse speed of 4.5 µs are achieved. The exceptionally high anisotropic photoresponse ratio of 84 highlights the potential for improving the performance of polarization-sensitive photodetectors. This work is crucial for advancing the understanding of nontrivial topology and the development of terahertz photodetector technologies.
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Affiliation(s)
- Keqin Tang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Key Laboratory of Semiconductor Display Materials and Chips & i-Lab Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, China
| | - Xiaokai Pan
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhuo Dong
- Key Laboratory of Semiconductor Display Materials and Chips & i-Lab Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, China
| | - Liu Yang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Key Laboratory of Semiconductor Display Materials and Chips & i-Lab Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, China
| | - Dong Wang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Key Laboratory of Semiconductor Display Materials and Chips & i-Lab Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, China
| | - Xingang Hou
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Key Laboratory of Semiconductor Display Materials and Chips & i-Lab Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, China
| | - Pengdong Wang
- Key Laboratory of Semiconductor Display Materials and Chips & i-Lab Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, China
| | - Yong Fang
- Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China
| | - Junyong Wang
- Key Laboratory of Semiconductor Display Materials and Chips & i-Lab Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, China
| | - Lin Wang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Kai Zhang
- Key Laboratory of Semiconductor Display Materials and Chips & i-Lab Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, China
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3
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Yang M, Shi Y, Song Q, Wei Z, Dun X, Wang Z, Wang Z, Qiu CW, Zhang H, Cheng X. Optical sorting: past, present and future. LIGHT, SCIENCE & APPLICATIONS 2025; 14:103. [PMID: 40011460 DOI: 10.1038/s41377-024-01734-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2024] [Revised: 12/02/2024] [Accepted: 12/24/2024] [Indexed: 02/28/2025]
Abstract
Optical sorting combines optical tweezers with diverse techniques, including optical spectrum, artificial intelligence (AI) and immunoassay, to endow unprecedented capabilities in particle sorting. In comparison to other methods such as microfluidics, acoustics and electrophoresis, optical sorting offers appreciable advantages in nanoscale precision, high resolution, non-invasiveness, and is becoming increasingly indispensable in fields of biophysics, chemistry, and materials science. This review aims to offer a comprehensive overview of the history, development, and perspectives of various optical sorting techniques, categorised as passive and active sorting methods. To begin, we elucidate the fundamental physics and attributes of both conventional and exotic optical forces. We then explore sorting capabilities of active optical sorting, which fuses optical tweezers with a diversity of techniques, including Raman spectroscopy and machine learning. Afterwards, we reveal the essential roles played by deterministic light fields, configured with lens systems or metasurfaces, in the passive sorting of particles based on their varying sizes and shapes, sorting resolutions and speeds. We conclude with our vision of the most promising and futuristic directions, including AI-facilitated ultrafast and bio-morphology-selective sorting. It can be envisioned that optical sorting will inevitably become a revolutionary tool in scientific research and practical biomedical applications.
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Affiliation(s)
- Meng Yang
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 200092, China
- Shanghai Frontiers Science Center of Digital Optics, Shanghai, 200092, China
| | - Yuzhi Shi
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China.
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 200092, China.
- Shanghai Frontiers Science Center of Digital Optics, Shanghai, 200092, China.
| | - Qinghua Song
- Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
| | - Zeyong Wei
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 200092, China
- Shanghai Frontiers Science Center of Digital Optics, Shanghai, 200092, China
| | - Xiong Dun
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 200092, China
- Shanghai Frontiers Science Center of Digital Optics, Shanghai, 200092, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhanshan Wang
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 200092, China
- Shanghai Frontiers Science Center of Digital Optics, Shanghai, 200092, China
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
| | - Hui Zhang
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China.
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 200092, China.
- Shanghai Frontiers Science Center of Digital Optics, Shanghai, 200092, China.
| | - Xinbin Cheng
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai, 200092, China.
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 200092, China.
- Shanghai Frontiers Science Center of Digital Optics, Shanghai, 200092, China.
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4
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Lei Z, Chang J, Zhao Q, Zhou J, Huang Y, Xiong Q, Xu X. Ultrafast photocurrent hysteresis in photoferroelectric α-In 2Se 3 diagnosed by terahertz emission spectroscopy. SCIENCE ADVANCES 2025; 11:eads8786. [PMID: 39951517 PMCID: PMC11827625 DOI: 10.1126/sciadv.ads8786] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2024] [Accepted: 01/15/2025] [Indexed: 02/16/2025]
Abstract
Nonvolatile control over the physical state of polar materials through all-optical methods has been a long-standing objective pursued in optoelectronics. Photoferroelectric semiconductors exhibit immense potential in capturing multimodal nonvolatile states, attributed to their spontaneous and reversible in-plane and out-of-plane polarizations. Herein, we uncover an unprecedented nonvolatile, zero-bias, ultrafast photocurrent hysteresis response with an innovative all-optical approach, discerned by analyzing in-plane and out-of-plane terahertz (THz) waves emitted from photoferroelectric α-In2Se3. The mechanism underlying such ultrafast photocurrent hysteresis arises from anomalous linear and circular photovoltaic effects synchronously fueled by a localized rearrangement of polarization. By harnessing the anisotropic photoferroelectric kinetics-induced relative phase between the in-plane and out-of-plane polarizations, we further demonstrate the flexible selection of chirality, tunable rotational angle, and optimizable ellipticity of THz waves. Our findings present a unique ultrafast and nondestructive strategy for investigating photoferroelectric hysteresis, empowering dynamic polarization manipulation of THz waves for a wide range of THz applications.
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Affiliation(s)
- Zhen Lei
- Shaanxi Joint Lab of Graphene, State Key Lab Incubation Base of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics and Photon-Technology, Northwest University, Xi’an 710069, P. R. China
| | - Jiawei Chang
- Shaanxi Joint Lab of Graphene, State Key Lab Incubation Base of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics and Photon-Technology, Northwest University, Xi’an 710069, P. R. China
| | - Qiyi Zhao
- School of Science, Xi’an University of Posts and Telecommunications, Xi’an 710121, P. R. China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, P. R. China
| | - Yuanyuan Huang
- Shaanxi Joint Lab of Graphene, State Key Lab Incubation Base of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics and Photon-Technology, Northwest University, Xi’an 710069, P. R. China
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Xinlong Xu
- Shaanxi Joint Lab of Graphene, State Key Lab Incubation Base of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics and Photon-Technology, Northwest University, Xi’an 710069, P. R. China
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5
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Zhu C, He W, Huang ZR, Zhu B, Yue LQ, Huang PY, Li D, Wang J, Zhen L, Qin JK, Xu CY. Strain-Reduced Inversion Symmetry in Ultrathin SnP 2Se 6 Crystals for Giant Bulk Piezophotovoltaic Generation. ACS NANO 2025; 19:2362-2370. [PMID: 39762717 DOI: 10.1021/acsnano.4c12605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/22/2025]
Abstract
With the potential to surpass the Shockley-Queisser (S-Q) limitation for solar energy conversion, the bulk photovoltaic (BPV) effect, which is induced by the broken inversion symmetry of the lattice, presents prospects for future light-harvesting technologies. However, the development of BPV is largely limited by the low solar spectrum conversion efficiency of existing noncentrosymmetric materials with wide band gaps. This study reports that the strain-induced reduction of inversion symmetry can enhance the second-order nonlinear susceptibility (χ(2)) of SnP2Se6 crystals by an order of magnitude, which contributes to an extremely high value of 1.3 × 10-8 m·V-1 under 1550 nm excitation, and is high among two-dimensional (2D) crystals. More importantly, owing to the orientation-dependent reduction of lattice symmetry, the BPV generation induced by strain, referred to as the bulk piezophotovoltaic effect, is demonstrated in the SnP2Se6 crystal with strong in-plane anisotropy. The strain along the Se zigzag direction greatly facilitates the generation of the giant photocurrent covering an extended spectrum ranging from 400 to 1100 nm, resulting in leading-level values of the BPV coefficient among noncentrosymmetric crystals, while the BPV effect is barely modulated along the Se armchair direction even with a large strain of 0.57%. This study highlights the potential of the bulk piezophotovoltaic effects for energy conversion efficiency and offers a promising strategy for the design of next-generation light-harvesting devices.
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Affiliation(s)
- Chengyi Zhu
- School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Wen He
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Zhen-Rong Huang
- School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Bingxuan Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Lin-Qing Yue
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Pei-Yu Huang
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Dong Li
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Jinzhong Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Liang Zhen
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
| | - Jing-Kai Qin
- School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
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6
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Zhou H, Xiao RC, Zhang SH, Gan W, Han H, Zhao HM, Lu W, Zhang C, Sun Y, Li H, Shao DF. Skin Effect of Nonlinear Optical Responses in Antiferromagnets. PHYSICAL REVIEW LETTERS 2024; 133:236903. [PMID: 39714660 DOI: 10.1103/physrevlett.133.236903] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Revised: 08/30/2024] [Accepted: 11/01/2024] [Indexed: 12/24/2024]
Abstract
Nonlinear optics plays important roles in the research of fundamental physics and the applications of high-performance optoelectronic devices. The bulk nonlinear optical responses arise from the uniform light absorption in noncentrosymmetric crystals, and hence are usually considered to be the collective phenomena of all atoms. Here we show, in contrast to this common expectation, the nonlinear optical responses in antiferromagnets can be selectively accumulated near the surfaces, representing a skin effect. This is because the inversion symmetry, despite being broken globally by magnetism, is barely violated locally deeply inside these antiferromagnets. Using A-type layered antiferromagnets as the representatives, we predict that the spatial-dependent nonlinear optical responses, such as the bulk photovoltaic effect and second harmonic generation, are notable in the top- and bottommost layers and decay rapidly when moving away from the surfaces. Such a phenomenon is strongly associated with the antiferromagnetism and exists in a broad range of antiferromagnets composed of centrosymmetric sublattices, offering promising device applications using these antiferromagnets. Our work uncovers a previously overlooked property of nonlinear optical responses and opens new opportunities for high-performance antiferromagnetic optospintronics.
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Affiliation(s)
| | | | | | | | - Hui Han
- Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, Anhui University, Hefei 230601, China
| | | | | | - Changjin Zhang
- Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
| | - Yuping Sun
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- Collaborative Innovation Center of Microstructures, Nanjing University, Nanjing 210093, China
| | - Hui Li
- Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, Anhui University, Hefei 230601, China
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7
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Ramos M, Ahmed T, Tu BQ, Chatzikyriakou E, Olano-Vegas L, Martín-García B, Calvo MR, Tsirkin SS, Souza I, Casanova F, de Juan F, Gobbi M, Hueso LE. Unveiling Intrinsic Bulk Photovoltaic Effect in Atomically Thin ReS 2. NANO LETTERS 2024; 24:14728-14735. [PMID: 39471055 DOI: 10.1021/acs.nanolett.4c03944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/01/2024]
Abstract
The bulk photovoltaic effect (BPVE) offers a promising avenue to surpass the efficiency limitations of current solar cell technology. However, disentangling intrinsic and extrinsic contributions to photocurrent remains a significant challenge. Here, we fabricate high-quality, lateral devices based on atomically thin ReS2 with minimal contact resistance, providing an optimal platform for distinguishing intrinsic bulk photovoltaic signals from other extrinsic photocurrent contributions originating from interfacial effects. Our devices exhibit large bulk photovoltaic performance with intrinsic responsivities of ∼1 mA/W in the visible range, without the need for external tuning knobs such as strain engineering. Our experimental findings are supported by theoretical calculations. Furthermore, our approach can be extrapolated to investigate the intrinsic BPVE in other noncentrosymmetric van der Waals materials, paving the way for a new generation of efficient light-harvesting devices.
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Affiliation(s)
- Maria Ramos
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Tanweer Ahmed
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Bao Q Tu
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Eleni Chatzikyriakou
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Lucía Olano-Vegas
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - M Reyes Calvo
- BCMaterials, Basque Center for Materials, Applications and Nanostructures, UPV/EHU Science Park, 48940 Leioa, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Stepan S Tsirkin
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Ivo Souza
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Félix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Fernando de Juan
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Marco Gobbi
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
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8
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Nakamura M, Chan YH, Yasunami T, Huang YS, Guo GY, Hu Y, Ogawa N, Chiew Y, Yu X, Morimoto T, Nagaosa N, Tokura Y, Kawasaki M. Strongly enhanced shift current at exciton resonances in a noncentrosymmetric wide-gap semiconductor. Nat Commun 2024; 15:9672. [PMID: 39550362 PMCID: PMC11569220 DOI: 10.1038/s41467-024-53541-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Accepted: 10/11/2024] [Indexed: 11/18/2024] Open
Abstract
Excitons are fundamental quasiparticles that are ubiquitous in photoexcited semiconductors and insulators. Despite causing a sharp and strong photoabsorption near the interband absorption edge, charge-neutral excitons do not yield photocurrent in conventional photovoltaic processes unless dissociated into free charge carriers. Here, we experimentally demonstrate that excitons can directly contribute to photocurrent generation through a nonlinear light-matter interaction in a noncentrosymmetric semiconductor CuI. Epitaxial thin films of CuI exhibit a substantial enhancement of photocurrent at exciton resonance energies even below the bandgap. From the light polarization dependence, this photocurrent is identified to be shift current, a nonlinear photocurrent driven by the change in the geometric Berry phase of electron wave functions upon the optical transition. The shift current at the exciton resonance is much larger than that induced above the band gap by free electron-hole excitation, and their signs are opposite. First-principles calculations elucidate that the sign and magnitude of the exciton shift current are strongly dependent on the strain in the thin film. The present study reveals the crucial role of excitons in enhancing the shift current magnitude and its strain sensitivity, and will open an unprecedented route for efficient manipulation of nonlinear optical effects.
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Affiliation(s)
- Masao Nakamura
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
| | - Yang-Hao Chan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei, Taiwan
| | - Takahiro Yasunami
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Bunkyo-ku, Tokyo, Japan
| | - Yi-Shiuan Huang
- Department of Physics, National Taiwan University, Taipei, Taiwan
| | - Guang-Yu Guo
- Physics Division, National Center for Theoretical Sciences, Taipei, Taiwan
- Department of Physics, National Taiwan University, Taipei, Taiwan
- Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei, Taiwan
| | - Yajian Hu
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - Naoki Ogawa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - Yiling Chiew
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - Xiuzhen Yu
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - Takahiro Morimoto
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Bunkyo-ku, Tokyo, Japan
| | - Naoto Nagaosa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Fundamental Quantum Science Program, Trip Headquarters, RIKEN, Wako, Japan
| | - Yoshinori Tokura
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Bunkyo-ku, Tokyo, Japan
- Tokyo College, University of Tokyo, Bunkyo-ku, Tokyo, Japan
| | - Masashi Kawasaki
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Bunkyo-ku, Tokyo, Japan
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9
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Jankowski WJ, Slager RJ. Quantized Integrated Shift Effect in Multigap Topological Phases. PHYSICAL REVIEW LETTERS 2024; 133:186601. [PMID: 39547194 DOI: 10.1103/physrevlett.133.186601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2024] [Revised: 07/18/2024] [Accepted: 09/24/2024] [Indexed: 11/17/2024]
Abstract
We show that certain three-dimensional multigap topological insulators can host quantized integrated shift photoconductivities due to bulk invariants that are defined under reality conditions imposed by additional symmetries. We recast the quantization in terms of the integrated torsion tensor and the non-Abelian Berry connection constituting Chern-Simons forms. Physically, we recognize that the topological quantization emerges purely from virtual transitions contributing to the optical response. Our findings provide another quantized electromagnetic dc response due to the nontrivial band topology, beyond the quantum anomalous Hall effect of Chern insulators and quantized circular photogalvanic effect found in Weyl semimetals.
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10
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Tomarchio L, Macis S, Mou S, Mosesso L, Markou A, Lesne E, Felser C, Lupi S. Optical Conductivity and Photo-Induced Polaronic Formation in Co 2MnGa Topological Semimetal. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400247. [PMID: 39252449 PMCID: PMC11538699 DOI: 10.1002/advs.202400247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 05/17/2024] [Indexed: 09/11/2024]
Abstract
Topological materials occupy an important place in the quantum materials family due to their peculiar low-energy electrodynamics, hosting emergent magneto-electrical, and nonlinear optical responses. This manuscript reports on the optical responses for the magnetic topological nodal semimetal Co2MnGa, studied in a thin film geometry at various thicknesses. The thickness-dependent optical conductivity is investigated, observing a substantial dependence of the electronic band structure on thickness. Additionally, details on the ultrafast response of the low energy excitations in the terahertz frequency are reported by employing optical pump-terahertz probe (OPTP) spectroscopy. In particular, the photocarrier dynamics of Co2MnGa thin films is studied at varying pump fluence, pump wavelength, and film thickness, observing a negative THz photoconductivity which is assigned to a dynamical formation of large polarons in the material.
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Affiliation(s)
- Luca Tomarchio
- Department of PhysicsSapienza UniversityPiazzale Aldo Moro 500185RomeItaly
- INFN section of RomeP.Le Aldo Moro, 200185RomeItaly
| | - Salvatore Macis
- Department of PhysicsSapienza UniversityPiazzale Aldo Moro 500185RomeItaly
| | - Sen Mou
- INFN section of RomeP.Le Aldo Moro, 200185RomeItaly
| | - Lorenzo Mosesso
- Department of PhysicsSapienza UniversityPiazzale Aldo Moro 500185RomeItaly
| | | | - Edouard Lesne
- Max Planck Institute for Chemical Physics of SolidsNöthnitzer Str. 4001187DresdenGermany
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of SolidsNöthnitzer Str. 4001187DresdenGermany
| | - Stefano Lupi
- Department of PhysicsSapienza UniversityPiazzale Aldo Moro 500185RomeItaly
- INFN section of RomeP.Le Aldo Moro, 200185RomeItaly
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11
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Wu S, Deng J, Wang X, Zhou J, Jiao H, Zhao Q, Lin T, Shen H, Meng X, Chen Y, Chu J, Wang J. Polarization photodetectors with configurable polarity transition enabled by programmable ferroelectric-doping patterns. Nat Commun 2024; 15:8743. [PMID: 39384760 PMCID: PMC11464516 DOI: 10.1038/s41467-024-52877-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/06/2024] [Accepted: 09/24/2024] [Indexed: 10/11/2024] Open
Abstract
Advances in symmetry-breaking engineering of heterointerfaces for optoelectronic devices have garnered significant attention due to their immense potential in tunable moiré quantum geometry and enabling polarization light detection. Despite several proposed approaches to breaking the symmetry of low-dimensional materials, there remains a lack of universal methods to create materials with prominent polarization detection capabilities. Here, we introduce a reliable strategy for manipulating the symmetry of low-dimensional materials through a programmable ferroelectric-doping patterns technique. This method introduces a spontaneous photocurrent and enables the detection of linearly polarization light in isotropic 2H-MoTe2. The 2H-MoTe2 photodetector exhibits a significant short-circuit photocurrent intensity (Jsc = 29.9 A/cm2) and open-circuit voltage Voc of 0.12 V ( ~ 3 × 105 V/cm). Under a specific bias, the polarization ratio transitions from 1 to ∞/-∞, shifting from a positive state (unipolar regime) to a negative state (bipolar regime). These findings underscore the potential of ferroelectric-doping patterns as a promising approach to creating composite materials with artificial bulk photovoltaic effect and achieving high-performance polarization light detection.
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Affiliation(s)
- Shuaiqin Wu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic, Fudan University, Shanghai, 200433, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No. 500 Yutian Road, Shanghai, 200083, China
| | - Jie Deng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No. 500 Yutian Road, Shanghai, 200083, China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No. 500 Yutian Road, Shanghai, 200083, China.
| | - Jing Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No. 500 Yutian Road, Shanghai, 200083, China.
| | - Hanxue Jiao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No. 500 Yutian Road, Shanghai, 200083, China
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Qianru Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No. 500 Yutian Road, Shanghai, 200083, China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No. 500 Yutian Road, Shanghai, 200083, China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No. 500 Yutian Road, Shanghai, 200083, China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No. 500 Yutian Road, Shanghai, 200083, China
| | - Yan Chen
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic, Fudan University, Shanghai, 200433, China.
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No. 500 Yutian Road, Shanghai, 200083, China.
| | - Junhao Chu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic, Fudan University, Shanghai, 200433, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No. 500 Yutian Road, Shanghai, 200083, China
| | - Jianlu Wang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic, Fudan University, Shanghai, 200433, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No. 500 Yutian Road, Shanghai, 200083, China
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
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12
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Yen Y, Krieger JA, Yao M, Robredo I, Manna K, Yang Q, McFarlane EC, Shekhar C, Borrmann H, Stolz S, Widmer R, Gröning O, Strocov VN, Parkin SSP, Felser C, Vergniory MG, Schüler M, Schröter NBM. Controllable orbital angular momentum monopoles in chiral topological semimetals. NATURE PHYSICS 2024; 20:1912-1918. [PMID: 39669528 PMCID: PMC11631750 DOI: 10.1038/s41567-024-02655-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Accepted: 08/30/2024] [Indexed: 12/14/2024]
Abstract
The emerging field of orbitronics aims to generate and control orbital angular momentum for information processing. Chiral crystals are promising orbitronic materials because they have been predicted to host monopole-like orbital textures, where the orbital angular momentum aligns isotropically with the electron's crystal momentum. However, such monopoles have not yet been directly observed in chiral crystals. Here, we use circular dichroism in angle-resolved photoelectron spectroscopy to image orbital angular momentum monopoles in the chiral topological semimetals PtGa and PdGa. The spectra show a robust polar texture that rotates around the monopole as a function of photon energy. This is a direct consequence of the underlying magnetic orbital texture and can be understood from the interference of local atomic contributions. Moreover, we also demonstrate that the polarity of the monopoles can be controlled through the structural handedness of the host crystal by imaging orbital angular moment monopoles and antimonopoles in the two enantiomers of PdGa, respectively. Our results highlight the potential of chiral crystals for orbitronic device applications, and our methodology could enable the discovery of even more complicated nodal orbital angular momentum textures that could be exploited for orbitronics.
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Affiliation(s)
- Yun Yen
- Laboratory for Materials Simulations, Paul Scherrer Institute, Villigen, Switzerland
- École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Jonas A. Krieger
- Max Planck Institute of Microstructure Physics, Halle, Germany
- Present Address: Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, Villigen, Switzerland
| | - Mengyu Yao
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Iñigo Robredo
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
- Donostia International Physics Center, Donostia - San Sebastian, Spain
| | - Kaustuv Manna
- Indian Institute of Technology-Delhi, New Delhi, India
| | - Qun Yang
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | | | - Chandra Shekhar
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Horst Borrmann
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Samuel Stolz
- nanotech@surfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland
| | - Roland Widmer
- nanotech@surfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland
| | - Oliver Gröning
- nanotech@surfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland
| | - Vladimir N. Strocov
- Swiss Light Source, Photon Science Division, Paul Scherrer Institute, Villigen, Switzerland
| | | | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Maia G. Vergniory
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
- Donostia International Physics Center, Donostia - San Sebastian, Spain
- Département de physique et Institut quantique, Université de Sherbrooke, Sherbrooke, Québec Canada
| | - Michael Schüler
- Laboratory for Materials Simulations, Paul Scherrer Institute, Villigen, Switzerland
- Department of Physics, University of Fribourg, Fribourg, Switzerland
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13
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Wang H, Yang L. Manipulating Photogalvanic Effects in Two-Dimensional Multiferroic Breathing Kagome Materials. J Phys Chem Lett 2024; 15:8689-8696. [PMID: 39159421 DOI: 10.1021/acs.jpclett.4c01844] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/21/2024]
Abstract
Multiferroic materials, known for their multiple tunable orders, present an exceptional opportunity to manipulate nonlinear optical responses that are sensitive to symmetry. In this study, we propose leveraging electric and magnetic fields to selectively control and switch specific types of photogalvanic effects in two-dimensional multiferroic breathing kagome materials. Taking monolayer Nb3I8 as an example, we demonstrate that the shift current, characterized by the real-space shift of electrons and holes, is predominantly unaffected by magnetic order. In contrast, injection current, featured by quantum metric dipole in momentum space, is closely related to valley polarization, which can be controlled by a magnetic field. Furthermore, both photocurrents can be reversed by an out-of-plane electric field via lattice breathing. Our findings reveal the potential of multiferroic breathing kagome structures for multifunctional optoelectronic applications and sensors.
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Affiliation(s)
- Haonan Wang
- Department of Physics, Washington University, St. Louis, Missouri 63130, United States
| | - Li Yang
- Department of Physics, Washington University, St. Louis, Missouri 63130, United States
- Department of Physics and Institute of Materials Science and Engineering, Washington University, St. Louis, Missouri 63130, United States
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14
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Xie HY, Ghaemi P, Mitrano M, Uchoa B. Theory of topological exciton insulators and condensates in flat Chern bands. Proc Natl Acad Sci U S A 2024; 121:e2401644121. [PMID: 39178234 PMCID: PMC11363302 DOI: 10.1073/pnas.2401644121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2024] [Accepted: 07/08/2024] [Indexed: 08/25/2024] Open
Abstract
Excitons are the neutral quasiparticles that form when Coulomb interactions create bound states between electrons and holes. Due to their bosonic nature, excitons are expected to condense and exhibit superfluidity at sufficiently low temperatures. In interacting Chern insulators, excitons may inherit the nontrivial topology and quantum geometry from the underlying electron wavefunctions. We theoretically investigate the excitonic bound states and superfluidity in flat-band insulators pumped with light. We find that the exciton wavefunctions exhibit vortex structures in momentum space, with the total vorticity being equal to the difference of Chern numbers between the conduction and valence bands. Moreover, both the exciton binding energy and the exciton superfluid density are proportional to the Brillouin-zone average of the quantum metric and the Coulomb potential energy per unit cell. Spontaneous emission of circularly polarized light from radiative decay is a detectable signature of the exciton vorticity. We propose that the vorticity can also be experimentally measured via the nonlinear anomalous Hall effect, whereas the exciton superfluidity can be detected by voltage-drop quantization through a combination of quantum geometry and Aharonov-Casher effect. Topological excitons and their superfluid phase could be realized in flat bands of twisted Van der Waals heterostructures.
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Affiliation(s)
- Hong-Yi Xie
- Department of Physics and Astronomy, Center for Quantum Research and Technology, University of Oklahoma, Norman, OK73069
| | - Pouyan Ghaemi
- Department of Physics, City University of New York, New York, NY10031
| | - Matteo Mitrano
- Department of Physics, Harvard University, Cambridge, MA, 02138
| | - Bruno Uchoa
- Department of Physics and Astronomy, Center for Quantum Research and Technology, University of Oklahoma, Norman, OK73069
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15
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Chen S, Chaudhary S, Refael G, Lewandowski C. Enhancing shift current response via virtual multiband transitions. COMMUNICATIONS PHYSICS 2024; 7:250. [PMID: 39070108 PMCID: PMC11271335 DOI: 10.1038/s42005-024-01729-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/07/2024] [Accepted: 07/02/2024] [Indexed: 07/30/2024]
Abstract
Materials exhibiting a significant shift current response could potentially outperform conventional solar cell materials. The myriad of factors governing shift-current response, however, poses significant challenges in finding such strong shift-current materials. Here we propose a general design principle that exploits inter-orbital mixing to excite virtual multiband transitions in materials with multiple flat bands to achieve an enhanced shift current response. We further relate this design principle to maximizing Wannier function spread as expressed through the formalism of quantum geometry. We demonstrate the viability of our design using a 1D stacked Rice-Mele model. Furthermore, we consider a concrete material realization - alternating angle twisted multilayer graphene (TMG) - a natural platform to experimentally realize such an effect. We identify a set of twist angles at which the shift current response is maximized via virtual transitions for each multilayer graphene and highlight the importance of TMG as a promising material to achieve an enhanced shift current response at terahertz frequencies. Our proposed mechanism also applies to other 2D systems and can serve as a guiding principle for designing multiband systems that exhibit an enhanced shift current response.
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Affiliation(s)
- Sihan Chen
- Kadanoff Center for Theoretical Physics, University of Chicago, Chicago, IL 60637 USA
- Department of Physics, California Institute of Technology, Pasadena, CA 91125 USA
| | - Swati Chaudhary
- Department of Physics, The University of Texas at Austin, Austin, TX 78712 USA
- Department of Physics, Northeastern University, Boston, MA 02115 USA
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - Gil Refael
- Department of Physics, California Institute of Technology, Pasadena, CA 91125 USA
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA 91125 USA
| | - Cyprian Lewandowski
- National High Magnetic Field Laboratory, Tallahassee, Florida, FL 32310 USA
- Department of Physics, Florida State University, Tallahassee, FL 32306 USA
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16
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Xie X, Leng P, Ding Z, Yang J, Yan J, Zhou J, Li Z, Ai L, Cao X, Jia Z, Zhang Y, Zhao M, Zhu W, Gao Y, Dong S, Xiu F. Surface photogalvanic effect in Ag 2Te. Nat Commun 2024; 15:5651. [PMID: 38969644 PMCID: PMC11226672 DOI: 10.1038/s41467-024-49576-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Accepted: 06/11/2024] [Indexed: 07/07/2024] Open
Abstract
The bulk photovoltaic effect (BPVE) in non-centrosymmetric materials has attracted significant attention in recent years due to its potential to surpass the Shockley-Queisser limit. Although these materials are strictly constrained by symmetry, progress has been made in artificially reducing symmetry to stimulate BPVE in wider systems. However, the complexity of these techniques has hindered their practical implementation. In this study, we demonstrate a large intrinsic photocurrent response in centrosymmetric topological insulator Ag2Te, attributed to the surface photogalvanic effect (SPGE), which is induced by symmetry reduction of the surface. Through diverse spatially-resolved measurements on specially designed devices, we directly observe that SPGE in Ag2Te arises from the difference between two opposite photocurrent flows generated from the top and bottom surfaces. Acting as an efficient SPGE material, Ag2Te demonstrates robust performance across a wide spectral range from visible to mid-infrared, making it promising for applications in solar cells and mid-infrared detectors. More importantly, SPGE generated on low-symmetric surfaces can potentially be found in various systems, thereby inspiring a broader range of choices for photovoltaic materials.
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Affiliation(s)
- Xiaoyi Xie
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Pengliang Leng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Zhenyu Ding
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Jinshan Yang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
| | - Jingyi Yan
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
| | - Junchen Zhou
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Linfeng Ai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Xiangyu Cao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Zehao Jia
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Yuda Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Minhao Zhao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yang Gao
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China.
| | - Shaoming Dong
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China.
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China.
- Shanghai Research Center for Quantum Sciences, Shanghai, 201315, China.
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17
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Beaulieu S, Dong S, Christiansson V, Werner P, Pincelli T, Ziegler JD, Taniguchi T, Watanabe K, Chernikov A, Wolf M, Rettig L, Ernstorfer R, Schüler M. Berry curvature signatures in chiroptical excitonic transitions. SCIENCE ADVANCES 2024; 10:eadk3897. [PMID: 38941460 PMCID: PMC11212730 DOI: 10.1126/sciadv.adk3897] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Accepted: 05/24/2024] [Indexed: 06/30/2024]
Abstract
The topology of the electronic band structure of solids can be described by its Berry curvature distribution across the Brillouin zone. We theoretically introduce and experimentally demonstrate a general methodology based on the measurement of energy- and momentum-resolved optical transition rates, allowing to reveal signatures of Berry curvature texture in reciprocal space. By performing time- and angle-resolved photoemission spectroscopy of atomically thin WSe2 using polarization-modulated excitations, we demonstrate that excitons become an asset in extracting the quantum geometrical properties of solids. We also investigate the resilience of our measurement protocol against ultrafast scattering processes following direct chiroptical transitions.
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Affiliation(s)
- Samuel Beaulieu
- Université de Bordeaux - CNRS - CEA, CELIA, UMR5107, F33405 Talence, France
| | - Shuo Dong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany
| | | | - Philipp Werner
- Department of Physics, University of Fribourg, 1700 Fribourg, Switzerland
| | - Tommaso Pincelli
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany
- Institut für Optik und Atomare Physik, Technische Universität Berlin, Strasse des 17 Juni 135, 10623 Berlin, Germany
| | - Jonas D. Ziegler
- Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Alexey Chernikov
- Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
| | - Martin Wolf
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany
| | - Laurenz Rettig
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany
| | - Ralph Ernstorfer
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany
- Institut für Optik und Atomare Physik, Technische Universität Berlin, Strasse des 17 Juni 135, 10623 Berlin, Germany
| | - Michael Schüler
- Laboratory for Materials Simulations, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
- Department of Physics, University of Fribourg, CH-1700 Fribourg, Switzerland
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18
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Xia H, Wu S, Liang B, Ding J, Jiang Z, Dong G, Shi Y, Shen D, Cheng J, Liu WT, Wu S. Nonlinear optical signatures of topological Dirac fermion. SCIENCE ADVANCES 2024; 10:eadp0575. [PMID: 38896626 PMCID: PMC11186486 DOI: 10.1126/sciadv.adp0575] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2024] [Accepted: 05/13/2024] [Indexed: 06/21/2024]
Abstract
Dirac fermion in topological materials exhibits intriguing nonlinear optical responses. However, their direct correlation with the linearly dispersed band remains elusive experimentally. Here, we take topological semimetal ZrSiS as a paradigm, unveiling three unique nonlinear optical signatures of Dirac fermion. These signatures include strong quadrupolar response, quantum interference effect, and exponential divergent four-wave mixing (FWM), all of which are described by the prominent third-order nonlinear optical susceptibility. Resonantly enhanced by linear bands, quadrupolar second harmonic generation in centrosymmetric bulk overwhelms the electric-dipole contribution at the surface with inherent inversion symmetry breaking. Furthermore, owing to the interference between multiple resonant transition pathways within linear bands, difference-frequency FWM is several orders of magnitude stronger than sum-frequency FWM and third harmonic generation. The difference-frequency FWM further displays an inverse-square divergence toward degenerate excitation, whose scaling law perfectly matches with the long-sought behavior of Dirac fermion. These signatures lay the solid foundation toward the practical applications of topological materials in nonlinear optoelectronics and photonics.
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Affiliation(s)
- Heming Xia
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of physics, Fudan University, Shanghai 200433, China
| | - Shuang Wu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of physics, Fudan University, Shanghai 200433, China
| | - Bokai Liang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of physics, Fudan University, Shanghai 200433, China
| | - Jianyang Ding
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhicheng Jiang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Guohao Dong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Dawei Shen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Jinluo Cheng
- GPL Photonics Lab, State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Wei-Tao Liu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of physics, Fudan University, Shanghai 200433, China
| | - Shiwei Wu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, and Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
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19
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Watanabe H, Yanase Y. Magnetic parity violation and parity-time-reversal-symmetric magnets. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:373001. [PMID: 38899401 DOI: 10.1088/1361-648x/ad52dd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Accepted: 05/31/2024] [Indexed: 06/21/2024]
Abstract
Parity-time-reversal symmetry (PTsymmetry), a symmetry for the combined operations of space inversion (P) and time reversal (T), is a fundamental concept of physics and characterizes the functionality of materials as well asPandTsymmetries. In particular, thePT-symmetric systems can be found in the centrosymmetric crystals undergoing the parity-violating magnetic order which we call the odd-parity magnetic multipole order. While this spontaneous order leavesPTsymmetry intact, the simultaneous violation ofPandTsymmetries gives rise to various emergent responses that are qualitatively different from those allowed by the nonmagneticP-symmetry breaking or by the ferromagnetic order. In this review, we introduce candidates hosting the intriguing spontaneous order and overview the characteristic physical responses. Various off-diagonal and/or nonreciprocal responses are identified, which are closely related to the unusual electronic structures such as hidden spin-momentum locking and asymmetric band dispersion.
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Affiliation(s)
- Hikaru Watanabe
- Research Center for Advanced Science and Technology, University of Tokyo, Meguro-ku, Tokyo 153-8904, Japan
| | - Youichi Yanase
- Department of Physics, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan
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20
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Ogino M, Okamura Y, Fujiwara K, Morimoto T, Nagaosa N, Kaneko Y, Tokura Y, Takahashi Y. Terahertz photon to dc current conversion via magnetic excitations of multiferroics. Nat Commun 2024; 15:4699. [PMID: 38844471 PMCID: PMC11156647 DOI: 10.1038/s41467-024-49056-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2024] [Accepted: 05/23/2024] [Indexed: 06/09/2024] Open
Abstract
Direct conversion from terahertz photon to charge current is a key phenomenon for terahertz photonics. Quantum geometrical description of optical processes in crystalline solids predicts existence of field-unbiased dc photocurrent arising from terahertz-light generation of magnetic excitations in multiferroics, potentially leading to fast and energy-efficient terahertz devices. Here, we demonstrate the dc charge current generation from terahertz magnetic excitations in multiferroic perovskite manganites with spin-driven ferroelectricity, while keeping an insulating state with no free carrier. It is also revealed that electromagnon, which ranges sub-terahertz to 2 THz, as well as antiferromagnetic resonance shows the giant conversion efficiency. Polar asymmetry induced by the cycloidal spin order gives rise to this terahertz-photon-induced dc photocurrent, and no external magnetic and electric bias field are required for this conversion process. The observed phenomena are beyond the conventional photovoltaics in semi-classical regime and demonstrate the essential role of quantum geometrical aspect in low-energy optical processes. Our finding establishes a paradigm of terahertz photovoltaic phenomena, paving a way for terahertz photonic devices and energy harvesting.
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Affiliation(s)
- Makiko Ogino
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, Japan
| | - Yoshihiro Okamura
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, Japan
| | - Kosuke Fujiwara
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, Japan
| | - Takahiro Morimoto
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, Japan
| | - Naoto Nagaosa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - Yoshio Kaneko
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - Yoshinori Tokura
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Tokyo College, University of Tokyo, Tokyo, Japan
| | - Youtarou Takahashi
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, Japan.
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
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21
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Zhang X, Carbin T, Culver AB, Du K, Wang K, Cheong SW, Roy R, Kogar A. Light-induced electronic polarization in antiferromagnetic Cr 2O 3. NATURE MATERIALS 2024; 23:790-795. [PMID: 38561519 DOI: 10.1038/s41563-024-01852-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2023] [Accepted: 03/06/2024] [Indexed: 04/04/2024]
Abstract
In a solid, the electronic subsystem can exhibit incipient order with lower point group symmetry than the crystal lattice. Ultrafast external fields that couple exclusively to electronic order parameters have rarely been investigated, however, despite their potential importance in inducing exotic effects. Here we show that when inversion symmetry is broken by the antiferromagnetic order in Cr2O3, transmitting a linearly polarized light pulse through the crystal gives rise to an in-plane rotational symmetry-breaking (from C3 to C1) via optical rectification. Using interferometric time-resolved second harmonic generation, we show that the ultrafast timescale of the symmetry reduction is indicative of a purely electronic response; the underlying spin and crystal structures remain unaffected. The symmetry-broken state exhibits a dipole moment, and its polar axis can be controlled with the incident light. Our results establish a coherent nonlinear optical protocol by which to break electronic symmetries and produce unconventional electronic effects in solids.
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Affiliation(s)
- Xinshu Zhang
- Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, CA, USA
| | - Tyler Carbin
- Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, CA, USA
| | - Adrian B Culver
- Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, CA, USA
- Mani L. Bhaumik Institute for Theoretical Physics, Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, CA, USA
| | - Kai Du
- Rutgers Center for Emergent Materials, Rutgers University, Piscataway, NJ, USA
| | - Kefeng Wang
- Rutgers Center for Emergent Materials, Rutgers University, Piscataway, NJ, USA
| | - Sang-Wook Cheong
- Rutgers Center for Emergent Materials, Rutgers University, Piscataway, NJ, USA
| | - Rahul Roy
- Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, CA, USA
- Mani L. Bhaumik Institute for Theoretical Physics, Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, CA, USA
| | - Anshul Kogar
- Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, CA, USA.
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22
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Wang T, Yu X. Helicity-Sensitive Terahertz Detection in Monolayer 1T'-WTe 2. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38619870 DOI: 10.1021/acsami.3c18898] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Valleytronics, identified as electronic properties of the energy band extrema in momentum space, has been intensively revived following the emergence of two-dimensional transition metal dichalcogenides (TMDCs) as their valley information can be controlled and probed through the spin angular momentum of light. Previous optical investigations of valleytronics have been limited to the visible/near-infrared spectral regime through which the carriers of most TMDCs can be excited. Monolayer 1T'-WTe2 with broken time-reversal symmetry provides a fertile platform to study the long-wavelength photonic properties in different valleys. Here, we employed a circularly polarized terahertz (THz) laser to selectively excite the valley of monolayer 1T'-WTe2 and demonstrate that the helicity-dependent photoresponse is generated via the photogalvanic effect (PGE). We also observed that the photocurrent is controlled by circular polarization and the external electric field. Because of the tunable Berry curvature dipole derived from the nontrivial wave functions near the inverted gap edge in monolayer WTe2, the bandgap can be tuned efficiently. Our results provide a versatile venue for controlling, detecting, and processing valleytronics and applications in on-chip THz imaging and quantum information processing.
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Affiliation(s)
- Ting Wang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Xuechao Yu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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23
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Tzschaschel C, Qiu JX, Gao XJ, Li HC, Guo C, Yang HY, Zhang CP, Xie YM, Liu YF, Gao A, Bérubé D, Dinh T, Ho SC, Fang Y, Huang F, Nordlander J, Ma Q, Tafti F, Moll PJW, Law KT, Xu SY. Nonlinear optical diode effect in a magnetic Weyl semimetal. Nat Commun 2024; 15:3017. [PMID: 38589414 PMCID: PMC11271640 DOI: 10.1038/s41467-024-47291-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Accepted: 03/27/2024] [Indexed: 04/10/2024] Open
Abstract
Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimetal CeAlSi, where the magnetization introduces a pronounced directionality in the nonlinear optical second-harmonic generation (SHG). We demonstrate a six-fold change of the measured SHG intensity between opposite propagation directions over a bandwidth exceeding 250 meV. Supported by density-functional theory, we establish the linearly dispersive bands emerging from Weyl nodes as the origin of this broadband effect. We further demonstrate current-induced magnetization switching and thus electrical control of the NODE. Our results advance ongoing research to identify novel nonlinear optical/transport phenomena in magnetic topological materials and further opens new pathways for the unidirectional manipulation of light.
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Affiliation(s)
- Christian Tzschaschel
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA.
- Max-Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, Berlin, Germany.
| | - Jian-Xiang Qiu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Xue-Jian Gao
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Hou-Chen Li
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Chunyu Guo
- Max Planck Institute for the Structure and Dynamics of Matter, Hamburg, Germany
- Laboratory of Quantum Materials (QMAT), Institute of Materials (IMX), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland
| | - Hung-Yu Yang
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Cheng-Ping Zhang
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Ying-Ming Xie
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Yu-Fei Liu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Anyuan Gao
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Damien Bérubé
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Thao Dinh
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Sheng-Chin Ho
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Yuqiang Fang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering Peking University, Beijing, China
| | - Fuqiang Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering Peking University, Beijing, China
| | | | - Qiong Ma
- Department of Physics, Boston College, Chestnut Hill, MA, USA
- CIFAR Azrieli Global Scholars program, CIFAR, Toronto, Ontario, Canada
| | - Fazel Tafti
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Philip J W Moll
- Max Planck Institute for the Structure and Dynamics of Matter, Hamburg, Germany
- Laboratory of Quantum Materials (QMAT), Institute of Materials (IMX), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland
| | - Kam Tuen Law
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Su-Yang Xu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA.
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24
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Shi LK, Matsyshyn O, Song JCW, Villadiego IS. Floquet Fermi Liquid. PHYSICAL REVIEW LETTERS 2024; 132:146402. [PMID: 38640367 DOI: 10.1103/physrevlett.132.146402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Revised: 01/22/2024] [Accepted: 03/12/2024] [Indexed: 04/21/2024]
Abstract
We demonstrate the existence of a nonequilibrium "Floquet Fermi liquid" state arising in partially filled Floquet Bloch bands weakly coupled to ideal fermionic baths, which possess a collection of "Floquet Fermi surfaces" enclosed inside each other, resembling matryoshka dolls. We elucidate several properties of these states, including their quantum oscillations under magnetic fields which feature slow beating patterns of their amplitude reflecting the different areas of the Floquet Fermi surfaces, consistent with those observed in microwave induced resistance oscillation experiments. We also investigate their specific heat and thermodynamic density of states and demonstrate how by controlling properties of the drive, such as its frequency, one can tune some of the Floquet Fermi surfaces toward nonequilibrium Van Hove singularities without changing the electron density.
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Affiliation(s)
- Li-Kun Shi
- Institut für Theoretische Physik, Universität Leipzig, Brüderstraße 16, 04103, Leipzig, Germany
| | - Oles Matsyshyn
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Justin C W Song
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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25
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Chen Z, Qiu H, Cheng X, Cui J, Jin Z, Tian D, Zhang X, Xu K, Liu R, Niu W, Zhou L, Qiu T, Chen Y, Zhang C, Xi X, Song F, Yu R, Zhai X, Jin B, Zhang R, Wang X. Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe 2 thin films. Nat Commun 2024; 15:2605. [PMID: 38521797 PMCID: PMC10960839 DOI: 10.1038/s41467-024-46821-8] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2024] [Accepted: 03/12/2024] [Indexed: 03/25/2024] Open
Abstract
Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films via the circular photogalvanic effect under normal incidence. This is activated by a controllable out-of-plane Te-vacancy defect gradient, which we unambiguously evidence with electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting but also generates the giant Berry curvature dipole responsible for the circular photogalvanic effect. We demonstrate that the THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, the temperature evolution of the THz emission features a minimum in the THz amplitude due to carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport.
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Affiliation(s)
- Zhongqiang Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Hongsong Qiu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xinjuan Cheng
- Department of Applied Physics, MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing, Nanjing University of Science and Technology, 210094, Nanjing, China
| | - Jizhe Cui
- School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zuanming Jin
- Terahertz Technology Innovation Research Institute, Terahertz Spectrum and Imaging Technology Cooperative Innovation Center, University of Shanghai for Science and Technology, 200093, Shanghai, China
| | - Da Tian
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Kankan Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Ruxin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Wei Niu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Liqi Zhou
- College of Engineering and Applied Sciences, Nanjing University, 210093, Nanjing, China
| | - Tianyu Qiu
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Yequan Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Caihong Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xiaoxiang Xi
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Fengqi Song
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Rong Yu
- School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xuechao Zhai
- Department of Applied Physics, MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing, Nanjing University of Science and Technology, 210094, Nanjing, China.
| | - Biaobing Jin
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China.
- Purple Mountain Laboratories, 211111, Nanjing, China.
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
- Department of Physics, Xiamen University, 361005, Xiamen, China.
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
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26
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Shoriki K, Moriishi K, Okamura Y, Yokoi K, Usui H, Murakawa H, Sakai H, Hanasaki N, Tokura Y, Takahashi Y. Large nonlinear optical magnetoelectric response in a noncentrosymmetric magnetic Weyl semimetal. Proc Natl Acad Sci U S A 2024; 121:e2316910121. [PMID: 38483985 PMCID: PMC10962943 DOI: 10.1073/pnas.2316910121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/29/2023] [Accepted: 02/12/2024] [Indexed: 03/27/2024] Open
Abstract
Weyl semimetals resulting from either inversion (P) or time-reversal (T) symmetry breaking have been revealed to show the record-breaking large optical response due to intense Berry curvature of Weyl-node pairs. Different classes of Weyl semimetals with both P and T symmetry breaking potentially exhibit optical magnetoelectric (ME) responses, which are essentially distinct from the previously observed optical responses in conventional Weyl semimetals, leading to the versatile functions such as directional dependence for light propagation and gyrotropic effects. However, such optical ME phenomena of (semi)metallic systems have remained elusive so far. Here, we show the large nonlinear optical ME response in noncentrosymmetric magnetic Weyl semimetal PrAlGe, in which the polar structural asymmetry and ferromagnetic ordering break P and T symmetry. We observe the giant second harmonic generation (SHG) arising from the P symmetry breaking in the paramagnetic phase, being comparable to the largest SHG response reported in Weyl semimetal TaAs. In the ferromagnetically ordered phase, it is found that interference between this nonmagnetic SHG and the magnetically induced SHG emerging due to both P and T symmetry breaking results in the magnetic field switching of SHG intensity. Furthermore, such an interference effect critically depends on the light-propagating direction. The corresponding magnetically induced nonlinear susceptibility is significantly larger than the prototypical ME material, manifesting the existence of the strong nonlinear dynamical ME coupling. The present findings establish the unique optical functionality of P- and T-symmetry broken ME topological semimetals.
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Affiliation(s)
- Kentaro Shoriki
- Department of Applied Physics and Quantum Phase Electronic Center, University of Tokyo, Tokyo113-8656, Japan
| | - Keigo Moriishi
- Department of Applied Physics and Quantum Phase Electronic Center, University of Tokyo, Tokyo113-8656, Japan
| | - Yoshihiro Okamura
- Department of Applied Physics and Quantum Phase Electronic Center, University of Tokyo, Tokyo113-8656, Japan
| | - Kohei Yokoi
- Department of Physics, Gakushuin University, Tokyo171-8588, Japan
| | - Hidetomo Usui
- Department of Applied Physics Shimane University, Matsue, Shimane690-8504, Japan
| | - Hiroshi Murakawa
- Department of Physics, Osaka University, Toyonaka, Osaka560-0043, Japan
| | - Hideaki Sakai
- Department of Physics, Osaka University, Toyonaka, Osaka560-0043, Japan
| | - Noriaki Hanasaki
- Department of Physics, Osaka University, Toyonaka, Osaka560-0043, Japan
| | - Yoshinori Tokura
- Department of Applied Physics and Quantum Phase Electronic Center, University of Tokyo, Tokyo113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako351-0198, Japan
- Tokyo College, University of Tokyo, Tokyo113-8656, Japan
| | - Youtarou Takahashi
- Department of Applied Physics and Quantum Phase Electronic Center, University of Tokyo, Tokyo113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako351-0198, Japan
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27
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Xiang L, Jin H, Wang J. Quantifying the photocurrent fluctuation in quantum materials by shot noise. Nat Commun 2024; 15:2012. [PMID: 38443381 PMCID: PMC10914713 DOI: 10.1038/s41467-024-46264-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 02/21/2024] [Indexed: 03/07/2024] Open
Abstract
The DC photocurrent can detect the topology and geometry of quantum materials without inversion symmetry. Herein, we propose that the DC shot noise (DSN), as the fluctuation of photocurrent operator, can also be a diagnostic of quantum materials. Particularly, we develop the quantum theory for DSNs in gapped systems and identify the shift and injection DSNs by dividing the second-order photocurrent operator into off-diagonal and diagonal contributions, respectively. Remarkably, we find that the DSNs can not be forbidden by inversion symmetry, while the constraint from time-reversal symmetry depends on the polarization of light. Furthermore, we show that the DSNs also encode the geometrical information of Bloch electrons, such as the Berry curvature and the quantum metric. Finally, guided by symmetry, we apply our theory to evaluate the DSNs in monolayer GeS and bilayer MoS2 with and without inversion symmetry and find that the DSNs can be larger in centrosymmetric phase.
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Affiliation(s)
- Longjun Xiang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Hao Jin
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Jian Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China.
- Department of Physics, University of Hong Kong, Hong Kong, China.
- Department of Physics, The University of Science and Technology of China, Hefei, China.
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28
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Zhou Y, Zhou X, Yu XL, Liang Z, Zhao X, Wang T, Miao J, Chen X. Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries. Nat Commun 2024; 15:501. [PMID: 38218730 PMCID: PMC10787835 DOI: 10.1038/s41467-024-44792-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Accepted: 01/04/2024] [Indexed: 01/15/2024] Open
Abstract
The photovoltaic effect lies at the heart of eco-friendly energy harvesting. However, the conversion efficiency of traditional photovoltaic effect utilizing the built-in electric effect in p-n junctions is restricted by the Shockley-Queisser limit. Alternatively, intrinsic/bulk photovoltaic effect (IPVE/BPVE), a second-order nonlinear optoelectronic effect arising from the broken inversion symmetry of crystalline structure, can overcome this theoretical limit. Here, we uncover giant and robust IPVE in one-dimensional (1D) van der Waals (vdW) grain boundaries (GBs) in a layered semiconductor, ReS2. The IPVE-induced photocurrent densities in vdW GBs are among the highest reported values compared with all kinds of material platforms. Furthermore, the IPVE-induced photocurrent is gate-tunable with a polarization-independent component along the GBs, which is preferred for energy harvesting. The observed IPVE in vdW GBs demonstrates a promising mechanism for emerging optoelectronics applications.
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Affiliation(s)
- Yongheng Zhou
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Xin Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Zihan Liang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China.
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29
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Hu C, Naik MH, Chan YH, Ruan J, Louie SG. Light-induced shift current vortex crystals in moiré heterobilayers. Proc Natl Acad Sci U S A 2023; 120:e2314775120. [PMID: 38085781 PMCID: PMC10741382 DOI: 10.1073/pnas.2314775120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Accepted: 11/07/2023] [Indexed: 12/24/2023] Open
Abstract
Transition metal dichalcogenide (TMD) moiré superlattices provide an emerging platform to explore various light-induced phenomena. Recently, the discoveries of novel moiré excitons have attracted great interest. The nonlinear optical responses of these systems are however still underexplored. Here, we report investigation of light-induced shift currents (a second-order response generating DC current from optical illumination) in the WSe2/WS2 moiré superlattice. We identify a striking phenomenon of the formation of shift current vortex crystals-i.e., two-dimensional periodic arrays of moiré-scale current vortices and associated magnetic fields with remarkable intensity under laboratory laser setup. Furthermore, we demonstrate high optical tunability of these current vortices-their location, shape, chirality, and magnitude can be tuned by the frequency, polarization, and intensity of the incident light. Electron-hole interactions (excitonic effects) are found to play a crucial role in the generation and nature of the shift current intensity and distribution. Our findings provide a promising all-optical control route to manipulate nanoscale shift current density distributions and magnetic field patterns, as well as shed light on nonlinear optical responses in moiré quantum matter and their possible applications.
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Affiliation(s)
- Chen Hu
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
| | - Mit H. Naik
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
| | - Yang-Hao Chan
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
- Institute of Atomic and Molecular Sciences, Academia Sinica, and Physics Division, National Center for Theoretical Sciences, Taipei10617, Taiwan
| | - Jiawei Ruan
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
| | - Steven G. Louie
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
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30
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Cheon CY, Sun Z, Cao J, Gonzalez Marin JF, Tripathi M, Watanabe K, Taniguchi T, Luisier M, Kis A. Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material. NPJ 2D MATERIALS AND APPLICATIONS 2023; 7:74. [PMID: 38665484 PMCID: PMC11041738 DOI: 10.1038/s41699-023-00435-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/06/2023] [Accepted: 10/17/2023] [Indexed: 04/28/2024]
Abstract
Sunlight is widely seen as one of the most abundant forms of renewable energy, with photovoltaic cells based on pn junctions being the most commonly used platform attempting to harness it. Unlike in conventional photovoltaic cells, the bulk photovoltaic effect (BPVE) allows for the generation of photocurrent and photovoltage in a single material without the need to engineer a pn junction and create a built-in electric field, thus offering a solution that can potentially exceed the Shockley-Queisser efficiency limit. However, it requires a material with no inversion symmetry and is therefore absent in centrosymmetric materials. Here, we demonstrate that breaking the inversion symmetry by structural disorder can induce BPVE in ultrathin PtSe2, a centrosymmetric semiconducting van der Waals material. Homogenous illumination of defective PtSe2 by linearly and circularly polarized light results in a photoresponse termed as linear photogalvanic effect (LPGE) and circular photogalvanic effect (CPGE), which is mostly absent in the pristine crystal. First-principles calculations reveal that LPGE originates from Se vacancies that act as asymmetric scattering centers for the photo-generated electron-hole pairs. Our work emphasizes the importance of defects to induce photovoltaic functionality in centrosymmetric materials and shows how the range of materials suitable for light sensing and energy-harvesting applications can be extended.
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Affiliation(s)
- Cheol-Yeon Cheon
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Zhe Sun
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Jiang Cao
- Integrated Systems Laboratory, ETH Zürich, 8092 Zurich, Switzerland
| | - Juan Francisco Gonzalez Marin
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Mukesh Tripathi
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan
| | - Mathieu Luisier
- Integrated Systems Laboratory, ETH Zürich, 8092 Zurich, Switzerland
| | - Andras Kis
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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31
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De Beule C, Mele EJ. Berry Curvature Spectroscopy from Bloch Oscillations. PHYSICAL REVIEW LETTERS 2023; 131:196603. [PMID: 38000436 DOI: 10.1103/physrevlett.131.196603] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Revised: 08/21/2023] [Accepted: 10/10/2023] [Indexed: 11/26/2023]
Abstract
Artificial crystals such as moiré superlattices can have a real-space periodicity much larger than the underlying atomic scale. This facilitates the presence of Bloch oscillations in the presence of a static electric field. We demonstrate that the optical response of such a system, when dressed with a static field, becomes resonant at the frequencies of Bloch oscillations, which are in the terahertz regime when the lattice constant is of the order of 10 nm. In particular, we show within a semiclassical band-projected theory that resonances in the dressed Hall conductivity are proportional to the lattice Fourier components of the Berry curvature. We illustrate our results with a low-energy model on an effective honeycomb lattice.
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Affiliation(s)
- Christophe De Beule
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
- Department of Physics and Materials Science, University of Luxembourg, L-1511 Luxembourg, Luxembourg
| | - E J Mele
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
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32
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Fu Q, Cong X, Xu X, Zhu S, Zhao X, Liu S, Yao B, Xu M, Deng Y, Zhu C, Wang X, Kang L, Zeng Q, Lin ML, Wang X, Tang B, Yang J, Dong Z, Liu F, Xiong Q, Zhou J, Wang Q, Li X, Tan PH, Tay BK, Liu Z. Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306330. [PMID: 37737448 DOI: 10.1002/adma.202306330] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 09/05/2023] [Indexed: 09/23/2023]
Abstract
Due to its inversion-broken triple helix structure and the nature of Weyl semiconductor, 2D Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. Here, a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) is demonstrated in the Weyl semiconductor 2D Te. Ultrahigh second-harmonic generation response is acquired from 2D Te with a large second-order nonlinear optical susceptibility (χ(2) ), which is up to 23.3 times higher than that of monolayer MoS2 in the range of 700-1500 nm. Notably, distinct from other 2D nonlinear semiconductors, χ(2) of 2D Te increases extraordinarily with increasing wavelength and reaches up to 5.58 nm V-1 at ≈2300 nm, which is the best infrared performance among the reported 2D nonlinear materials. Large χ(2) of 2D Te also enables the high-intensity sum-frequency generation with an ultralow continuous-wave (CW) pump power. Theoretical calculations reveal that the exceptional performance is attributed to the presence of large BCD located at the Weyl points of 2D Te. These results unravel a new linkage between Weyl semiconductor and strong optical nonlinear responses, rendering 2D Te a competitive candidate for highly efficient nonlinear 2D semiconductors in the infrared region.
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Affiliation(s)
- Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
| | - Xin Cong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Xiaodong Xu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Song Zhu
- School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Sheng Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Bingqing Yao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Manzhang Xu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ya Deng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xiaowei Wang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lixing Kang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qingsheng Zeng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Miao-Ling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Xingli Wang
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
| | - Bijun Tang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jianqun Yang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Zhili Dong
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China
| | - Jiadong Zhou
- Key Lab of advanced optoelectronic quantum architecture and measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Qijie Wang
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
- School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xingji Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Beng Kang Tay
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Blk S9, Level 9, 4 Science Drive 2, Singapore, 117544, Singapore
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33
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Lysne M, Schüler M, Werner P. Quantum Optics Measurement Scheme for Quantum Geometry and Topological Invariants. PHYSICAL REVIEW LETTERS 2023; 131:156901. [PMID: 37897742 DOI: 10.1103/physrevlett.131.156901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Accepted: 09/07/2023] [Indexed: 10/30/2023]
Abstract
We show how a quantum optical measurement scheme based on heterodyne detection can be used to explore geometrical and topological properties of condensed matter systems. Considering a 2D material placed in a cavity with a coupling to the environment, we compute correlation functions of the photons exiting the cavity and relate them to the hybrid light-matter state within the cavity. Different polarizations of the intracavity field give access to all components of the quantum geometric tensor on contours in the Brillouin zone defined by the transition energy. Combining recent results based on the metric-curvature correspondence with the measured quantum metric allows us to characterize the topological phase of the material. Moreover, in systems where S_{z} is a good quantum number, the procedure also allows us to extract the spin Chern number. As an interesting application, we consider a minimal model for twisted bilayer graphene at the magic angle, and discuss the feasibility of extracting the Euler number.
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Affiliation(s)
- Markus Lysne
- Department of Physics, University of Fribourg, CH-1700 Fribourg, Switzerland
| | - Michael Schüler
- Department of Physics, University of Fribourg, CH-1700 Fribourg, Switzerland
- Laboratory for Materials Simulations, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - Philipp Werner
- Department of Physics, University of Fribourg, CH-1700 Fribourg, Switzerland
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34
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Wu S, Fei Z, Sun Z, Yi Y, Xia W, Yan D, Guo Y, Shi Y, Yan J, Cobden DH, Liu WT, Xu X, Wu S. Extrinsic Nonlinear Kerr Rotation in Topological Materials under a Magnetic Field. ACS NANO 2023; 17:18905-18913. [PMID: 37767802 DOI: 10.1021/acsnano.3c04153] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/29/2023]
Abstract
Topological properties in quantum materials are often governed by symmetry and tuned by crystal structure and external fields, and hence, symmetry-sensitive nonlinear optical measurements in a magnetic field are a valuable probe. Here, we report nonlinear magneto-optical second harmonic generation (SHG) studies of nonmagnetic topological materials including bilayer WTe2, monolayer WSe2, and bulk TaAs. The polarization-resolved patterns of optical SHG under a magnetic field show nonlinear Kerr rotation in these time-reversal symmetric materials. For materials with 3-fold rotational symmetric lattice structure, the SHG polarization pattern rotates just slightly in a magnetic field, whereas in those with mirror or 2-fold rotational symmetry, the SHG polarization pattern rotates greatly and distorts. These different magneto-SHG characters can be understood by considering the superposition of the magnetic field-induced time-noninvariant nonlinear optical tensor and the crystal-structure-based time-invariant counterpart. The situation is further clarified by scrutinizing the Faraday rotation, whose subtle interplay with crystal symmetry accounts for the diverse behavior of the extrinsic nonlinear Kerr rotation in different materials. Our work illustrates the application of magneto-SHG techniques to directly probe nontrivial topological properties, and underlines the importance of minimizing extrinsic nonlinear Kerr rotation in polarization-resolved magneto-optical studies.
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Affiliation(s)
- Shuang Wu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Zaiyao Fei
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Zeyuan Sun
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yangfan Yi
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wei Xia
- School of Physical Science and Technology, and ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Dayu Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yanfeng Guo
- School of Physical Science and Technology, and ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiaqiang Yan
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David H Cobden
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Wei-Tao Liu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Shiwei Wu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute, Shanghai 200232, China
- Institute for Nanoelectronic Devices and Quantum Computing, and Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
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35
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Ikeda Y, Kitamura S, Morimoto T. Photocurrent Induced by a Bicircular Light Drive in Centrosymmetric Systems. PHYSICAL REVIEW LETTERS 2023; 131:096301. [PMID: 37721814 DOI: 10.1103/physrevlett.131.096301] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Accepted: 07/12/2023] [Indexed: 09/20/2023]
Abstract
A bicircular light (BCL) consists of left and right circularly polarized lights with different frequencies, and draws a roselike pattern with a rotational symmetry determined by the ratio of the two frequencies. Here we show that an application of a BCL to centrosymmetric systems allows a photocurrent generation through introduction of an effective polarity to the system. We derive formulas for the BCL-induced photocurrent from a standard perturbation theory, which is then applied to a simple 1D model and 3D Dirac and Weyl semimetals. A nonperturbative effect with strong light intensity is also discussed with the Floquet technique.
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Affiliation(s)
- Yuya Ikeda
- Department of Applied Physics, The University of Tokyo, Hongo, Tokyo 113-8656, Japan
| | - Sota Kitamura
- Department of Applied Physics, The University of Tokyo, Hongo, Tokyo 113-8656, Japan
| | - Takahiro Morimoto
- Department of Applied Physics, The University of Tokyo, Hongo, Tokyo 113-8656, Japan
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36
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Shi J, Xu H, Heide C, HuangFu C, Xia C, de Quesada F, Shen H, Zhang T, Yu L, Johnson A, Liu F, Shi E, Jiao L, Heinz T, Ghimire S, Li J, Kong J, Guo Y, Lindenberg AM. Giant room-temperature nonlinearities in a monolayer Janus topological semiconductor. Nat Commun 2023; 14:4953. [PMID: 37587120 PMCID: PMC10432555 DOI: 10.1038/s41467-023-40373-z] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/19/2023] [Accepted: 07/24/2023] [Indexed: 08/18/2023] Open
Abstract
Nonlinear optical materials possess wide applications, ranging from terahertz and mid-infrared detection to energy harvesting. Recently, the correlations between nonlinear optical responses and certain topological properties, such as the Berry curvature and the quantum metric tensor, have attracted considerable interest. Here, we report giant room-temperature nonlinearities in non-centrosymmetric two-dimensional topological materials-the Janus transition metal dichalcogenides in the 1 T' phase, synthesized by an advanced atomic-layer substitution method. High harmonic generation, terahertz emission spectroscopy, and second harmonic generation measurements consistently show orders-of-the-magnitude enhancement in terahertz-frequency nonlinearities in 1 T' MoSSe (e.g., > 50 times higher than 2H MoS2 for 18th order harmonic generation; > 20 times higher than 2H MoS2 for terahertz emission). We link this giant nonlinear optical response to topological band mixing and strong inversion symmetry breaking due to the Janus structure. Our work defines general protocols for designing materials with large nonlinearities and heralds the applications of topological materials in optoelectronics down to the monolayer limit.
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Affiliation(s)
- Jiaojian Shi
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Haowei Xu
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Christian Heide
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Changan HuangFu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, 100084, Beijing, China
| | - Chenyi Xia
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Felipe de Quesada
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Hongzhi Shen
- School of Engineering, Westlake University, 310024, Hangzhou, China
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Leo Yu
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA, 94305, USA
| | - Amalya Johnson
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Fang Liu
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Chemistry, Stanford University, Stanford, CA, 94305, USA
| | - Enzheng Shi
- School of Engineering, Westlake University, 310024, Hangzhou, China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, 100084, Beijing, China
| | - Tony Heinz
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA, 94305, USA
| | - Shambhu Ghimire
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Ju Li
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Yunfan Guo
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310058, Hangzhou, China.
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA.
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.
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37
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Duan S, Qin F, Chen P, Yang X, Qiu C, Huang J, Liu G, Li Z, Bi X, Meng F, Xi X, Yao J, Ideue T, Lian B, Iwasa Y, Yuan H. Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces. NATURE NANOTECHNOLOGY 2023; 18:867-874. [PMID: 37322146 DOI: 10.1038/s41565-023-01417-z] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 05/14/2023] [Indexed: 06/17/2023]
Abstract
The Berry curvature dipole (BCD) is a key parameter that describes the geometric nature of energy bands in solids. It defines the dipole-like distribution of Berry curvature in the band structure and plays a key role in emergent nonlinear phenomena. The theoretical rationale is that the BCD can be generated at certain symmetry-mismatched van der Waals heterointerfaces even though each material has no BCD in its band structure. However, experimental confirmation of such a BCD induced via breaking of the interfacial symmetry remains elusive. Here we demonstrate a universal strategy for BCD generation and observe BCD-induced gate-tunable spin-polarized photocurrent at WSe2/SiP interfaces. Although the rotational symmetry of each material prohibits the generation of spin photocurrent under normal incidence of light, we surprisingly observe a direction-selective spin photocurrent at the WSe2/SiP heterointerface with a twist angle of 0°, whose amplitude is electrically tunable with the BCD magnitude. Our results highlight a BCD-spin-valley correlation and provide a universal approach for engineering the geometric features of twisted heterointerfaces.
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Affiliation(s)
- Siyu Duan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Peng Chen
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xupeng Yang
- Institute of Physics, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Gan Liu
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China
| | - Zeya Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xiangyu Bi
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Fanhao Meng
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China
| | - Jie Yao
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA
| | - Toshiya Ideue
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, Japan.
- Institute for Solid State Physics, The University of Tokyo, Chiba, Japan.
| | - Biao Lian
- Department of Physics, Princeton University, Princeton, NJ, USA.
| | - Yoshihiro Iwasa
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
- RIKEN Center for Emergent Matter Science, Wako, Japan
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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38
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Liang Z, Zhou X, Zhang L, Yu XL, Lv Y, Song X, Zhou Y, Wang H, Wang S, Wang T, Shum PP, He Q, Liu Y, Zhu C, Wang L, Chen X. Strong bulk photovoltaic effect in engineered edge-embedded van der Waals structures. Nat Commun 2023; 14:4230. [PMID: 37454221 DOI: 10.1038/s41467-023-39995-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 07/07/2023] [Indexed: 07/18/2023] Open
Abstract
Bulk photovoltaic effect (BPVE), a second-order nonlinear optical effect governed by the quantum geometric properties of materials, offers a promising approach to overcome the Shockley-Quiesser limit of traditional photovoltaic effect and further improve the efficiency of energy harvesting. Here, we propose an effective platform, the nano edges embedded in assembled van der Waals (vdW) homo- or hetero-structures with strong symmetry breaking, low dimensionality and abundant species, for BPVE investigations. The BPVE-induced photocurrents strongly depend on the orientation of edge-embedded structures and polarization of incident light. Reversed photocurrent polarity can be observed at left and right edge-embedded structures. Our work not only visualizes the unique optoelectronic effect in vdW nano edges, but also provides an effective strategy for achieving BPVE in engineered vdW structures.
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Affiliation(s)
- Zihan Liang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Xin Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Le Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China.
- International Quantum Academy, Shenzhen, China.
| | - Yan Lv
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xuefen Song
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yongheng Zhou
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Han Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Shuo Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Perry Ping Shum
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Qian He
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Yanjun Liu
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.
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Pettine J, Padmanabhan P, Sirica N, Prasankumar RP, Taylor AJ, Chen HT. Ultrafast terahertz emission from emerging symmetry-broken materials. LIGHT, SCIENCE & APPLICATIONS 2023; 12:133. [PMID: 37258515 PMCID: PMC10232484 DOI: 10.1038/s41377-023-01163-w] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2023] [Revised: 03/28/2023] [Accepted: 04/16/2023] [Indexed: 06/02/2023]
Abstract
Nonlinear optical spectroscopies are powerful tools for investigating both static material properties and light-induced dynamics. Terahertz (THz) emission spectroscopy has emerged in the past several decades as a versatile method for directly tracking the ultrafast evolution of physical properties, quasiparticle distributions, and order parameters within bulk materials and nanoscale interfaces. Ultrafast optically-induced THz radiation is often analyzed mechanistically in terms of relative contributions from nonlinear polarization, magnetization, and various transient free charge currents. While this offers material-specific insights, more fundamental symmetry considerations enable the generalization of measured nonlinear tensors to much broader classes of systems. We thus frame the present discussion in terms of underlying broken symmetries, which enable THz emission by defining a system directionality in space and/or time, as well as more detailed point group symmetries that determine the nonlinear response tensors. Within this framework, we survey a selection of recent studies that utilize THz emission spectroscopy to uncover basic properties and complex behaviors of emerging materials, including strongly correlated, magnetic, multiferroic, and topological systems. We then turn to low-dimensional systems to explore the role of designer nanoscale structuring and corresponding symmetries that enable or enhance THz emission. This serves as a promising route for probing nanoscale physics and ultrafast light-matter interactions, as well as facilitating advances in integrated THz systems. Furthermore, the interplay between intrinsic and extrinsic material symmetries, in addition to hybrid structuring, may stimulate the discovery of exotic properties and phenomena beyond existing material paradigms.
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Affiliation(s)
- Jacob Pettine
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Prashant Padmanabhan
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Nicholas Sirica
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Rohit P Prasankumar
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Deep Science Fund, Intellectual Ventures, Bellevue, WA, 98005, USA
| | - Antoinette J Taylor
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Hou-Tong Chen
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.
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40
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Kaplan D, Holder T, Yan B. General nonlinear Hall current in magnetic insulators beyond the quantum anomalous Hall effect. Nat Commun 2023; 14:3053. [PMID: 37236923 DOI: 10.1038/s41467-023-38734-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2022] [Accepted: 05/08/2023] [Indexed: 05/28/2023] Open
Abstract
Can a generic magnetic insulator exhibit a Hall current? The quantum anomalous Hall effect (QAHE) is one example of an insulating bulk carrying a quantized Hall conductivity while insulators with zero Chern number present zero Hall conductance in the linear response regime. Here, we find that a general magnetic insulator possesses a nonlinear Hall conductivity quadratic to the electric field if the system breaks inversion symmetry, which can be identified as a new type of multiferroic coupling. This conductivity originates from an induced orbital magnetization due to virtual interband transitions. We identify three contributions to the wavepacket motion, a velocity shift, a positional shift, and a Berry curvature renormalization. In contrast to the crystalline solid, we find that this nonlinear Hall conductivity vanishes for Landau levels of a 2D electron gas, indicating a fundamental difference between the QAHE and the integer quantum Hall effect.
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Affiliation(s)
- Daniel Kaplan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Tobias Holder
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 7610001, Israel.
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41
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Yokouchi T, Ikeda Y, Morimoto T, Shiomi Y. Giant Magnetochiral Anisotropy in Weyl Semimetal WTe_{2} Induced by Diverging Berry Curvature. PHYSICAL REVIEW LETTERS 2023; 130:136301. [PMID: 37067327 DOI: 10.1103/physrevlett.130.136301] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2022] [Accepted: 03/08/2023] [Indexed: 06/19/2023]
Abstract
The concept of Berry curvature is essential for various transport phenomena. However, an effect of the Berry curvature on magnetochiral anisotropy, i.e., nonreciprocal magnetotransport, is still elusive. Here, we report that the Berry curvature induces the large magnetochiral anisotropy. In Weyl semimetal WTe_{2}, we observe the strong enhancement of the magnetochiral anisotropy when the Fermi level is located near the Weyl points. Notably, the maximal figure of merit γ[over ¯] reaches 1.2×10^{-6} m^{2} T^{-1} A^{-1}, which is the largest ever reported in bulk materials. Our semiclassical calculation shows that the diverging Berry curvature at the Weyl points strongly enhances the magnetochiral anisotropy.
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Affiliation(s)
- Tomoyuki Yokouchi
- Department of Basic Science, The University of Tokyo, Tokyo 152-8902, Japan
| | - Yuya Ikeda
- Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Takahiro Morimoto
- Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yuki Shiomi
- Department of Basic Science, The University of Tokyo, Tokyo 152-8902, Japan
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42
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Zhang S, Maruyama M, Okada S, Xue M, Watanabe K, Taniguchi T, Hashimoto K, Miyata Y, Canton-Vitoria R, Kitaura R. Observation of the photovoltaic effect in a van der Waals heterostructure. NANOSCALE 2023; 15:5948-5953. [PMID: 36883438 DOI: 10.1039/d2nr06616e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
van der Waals (vdW) heterostructures, which can be assembled with various two-dimensional materials, provide a versatile platform for exploring emergent phenomena. Here, we report an observation of the photovoltaic effect in a WS2/MoS2 vdW heterostructure. Light excitation of WS2/MoS2 at a wavelength of 633 nm yields a photocurrent without applying bias voltages, and the excitation power dependence of the photocurrent shows characteristic crossover from a linear to square root dependence. Photocurrent mapping has clearly shown that the observed photovoltaic effect arises from the WS2/MoS2 region, not from Schottky junctions at electrode contacts. Kelvin probe microscopy observations show no slope in the electrostatic potential, excluding the possibility that the photocurrent originates from an unintentionally formed built-in potential.
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Affiliation(s)
- Shaochun Zhang
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan.
| | - Mina Maruyama
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8571, Japan
| | - Susumu Okada
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8571, Japan
| | - Mengsong Xue
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan.
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kazuki Hashimoto
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | | | - Ryo Kitaura
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan.
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
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43
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Yuan S, Ma C, Fetaya E, Mueller T, Naveh D, Zhang F, Xia F. Geometric deep optical sensing. Science 2023; 379:eade1220. [PMID: 36927029 DOI: 10.1126/science.ade1220] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/18/2023]
Abstract
Geometry, an ancient yet vibrant branch of mathematics, has important and far-reaching impacts on various disciplines such as art, science, and engineering. Here, we introduce an emerging concept dubbed "geometric deep optical sensing" that is based on a number of recent demonstrations in advanced optical sensing and imaging, in which a reconfigurable sensor (or an array thereof) can directly decipher the rich information of an unknown incident light beam, including its intensity, spectrum, polarization, spatial features, and possibly angular momentum. We present the physical, mathematical, and engineering foundations of this concept, with particular emphases on the roles of classical and quantum geometry and deep neural networks. Furthermore, we discuss the new opportunities that this emerging scheme can enable and the challenges associated with future developments.
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Affiliation(s)
- Shaofan Yuan
- Department of Electrical Engineering, Yale University, New Haven, CT, USA
| | - Chao Ma
- Department of Electrical Engineering, Yale University, New Haven, CT, USA
| | - Ethan Fetaya
- Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel
| | - Thomas Mueller
- Institute of Photonics, Vienna University of Technology, Vienna, Austria
| | - Doron Naveh
- Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel
| | - Fan Zhang
- Department of Physics, The University of Texas at Dallas, Richardson, TX, USA.,Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Fengnian Xia
- Department of Electrical Engineering, Yale University, New Haven, CT, USA
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44
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Hu Z, Zhang L, Chakraborty A, D'Olimpio G, Fujii J, Ge A, Zhou Y, Liu C, Agarwal A, Vobornik I, Farias D, Kuo CN, Lue CS, Politano A, Wang SW, Hu W, Chen X, Lu W, Wang L. Terahertz Nonlinear Hall Rectifiers Based on Spin-Polarized Topological Electronic States in 1T-CoTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209557. [PMID: 36633006 DOI: 10.1002/adma.202209557] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Revised: 01/04/2023] [Indexed: 06/17/2023]
Abstract
The zero-magnetic-field nonlinear Hall effect (NLHE) refers to the second-order transverse current induced by an applied alternating electric field; it indicates the topological properties of inversion-symmetry-breaking crystals. Despite several studies on the NLHE induced by the Berry-curvature dipole in Weyl semimetals, the direct current conversion by rectification is limited to very low driving frequencies and cryogenic temperatures. The nonlinear photoresponse generated by the NLHE at room temperature can be useful for numerous applications in communication, sensing, and photodetection across a high bandwidth. In this study, observations of the second-order NLHE in type-II Dirac semimetal CoTe2 under time-reversal symmetry are reported. This is determined by the disorder-induced extrinsic contribution on the broken-inversion-symmetry surface and room-temperature terahertz rectification without the need for semiconductor junctions or bias voltage. It is shown that remarkable photoresponsivity over 0.1 A W-1 , a response time of approximately 710 ns, and a mean noise equivalent power of 1 pW Hz-1/2 can be achieved at room temperature. The results open a new pathway for low-energy photon harvesting via nonlinear rectification induced by the NLHE in strongly spin-orbit-coupled and inversion-symmetry-breaking systems, promising a considerable impact in the field of infrared/terahertz photonics.
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Affiliation(s)
- Zhen Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Libo Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Atasi Chakraborty
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, India
| | - Gianluca D'Olimpio
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, (AQ), 67100, L'Aquila, Italy
| | - Jun Fujii
- Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science, Park S.S. 14 km 163.5, 34149, Trieste, Italy
| | - Anping Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Yuanchen Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Changlong Liu
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, India
| | - Ivana Vobornik
- Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science, Park S.S. 14 km 163.5, 34149, Trieste, Italy
| | - Daniel Farias
- Departamento de Física de la Materia Condensada and Instituto "Nicolás Cabrera", Universidad Autónoma de Madrid, 28049, Madrid, Spain
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - Chia-Nung Kuo
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, 70101, Tainan, Taiwan, China
| | - Chin Shan Lue
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, 70101, Tainan, Taiwan, China
| | - Antonio Politano
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, (AQ), 67100, L'Aquila, Italy
| | - Shao-Wei Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Lin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
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45
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Yar A, Sultana R. Nonlinear Hall effect in monolayer phosphorene with broken inversion symmetry. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:165701. [PMID: 36825779 DOI: 10.1088/1361-648x/acbc02] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Accepted: 02/14/2023] [Indexed: 06/18/2023]
Abstract
Nonlinear Hall effect (NLHE), a new member of the family of Hall effects, in monolayer phosphorene is investigated. We find that phosphorene exhibits pronounced NLHE, arising from the dipole moment of the Berry curvature induced by the proximity effect that breaks the inversion symmetry of the system. Remarkably, the nonlinear Hall response exhibits central minimum with a width on the order of the band gap, followed by two resonance-like peaks. Interestingly, each resonance peak of the Hall response shifts in the negative region of the chemical potential which is consistent with the shift of valence and conduction bands in the energy spectrum of monolayer phosphorene. It is observed that the two peaks are asymmetric, originated from anisotropy in the band structure of phosphorene. It is shown that the NLHE is very sensitive to the band gap and temperature of the system. Moreover, we find that a phase transition occurs in the nonlinear Hall response and nonlinear spin Hall conductivity of the system under the influence of spin-orbit interaction, tuned by the strength of interaction and band gap induced in the energy spectrum of monolayer phosphorene with broken inversion symmetry.
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Affiliation(s)
- Abdullah Yar
- Department of Physics, Kohat University of Science and Technology, Kohat 26000, Khyber Pakhtunkhwa, Pakistan
| | - Rifat Sultana
- Department of Physics, Kohat University of Science and Technology, Kohat 26000, Khyber Pakhtunkhwa, Pakistan
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46
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Cochran TA, Belopolski I, Manna K, Yahyavi M, Liu Y, Sanchez DS, Cheng ZJ, Yang XP, Multer D, Yin JX, Borrmann H, Chikina A, Krieger JA, Sánchez-Barriga J, Le Fèvre P, Bertran F, Strocov VN, Denlinger JD, Chang TR, Jia S, Felser C, Lin H, Chang G, Hasan MZ. Visualizing Higher-Fold Topology in Chiral Crystals. PHYSICAL REVIEW LETTERS 2023; 130:066402. [PMID: 36827563 DOI: 10.1103/physrevlett.130.066402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2021] [Revised: 01/18/2022] [Accepted: 12/14/2022] [Indexed: 06/18/2023]
Abstract
Novel topological phases of matter are fruitful platforms for the discovery of unconventional electromagnetic phenomena. Higher-fold topology is one example, where the low-energy description goes beyond standard model analogs. Despite intensive experimental studies, conclusive evidence remains elusive for the multigap topological nature of higher-fold chiral fermions. In this Letter, we leverage a combination of fine-tuned chemical engineering and photoemission spectroscopy with photon energy contrast to discover the higher-fold topology of a chiral crystal. We identify all bulk branches of a higher-fold chiral fermion for the first time, critically important for allowing us to explore unique Fermi arc surface states in multiple interband gaps, which exhibit an emergent ladder structure. Through designer chemical gating of the samples in combination with our measurements, we uncover an unprecedented multigap bulk boundary correspondence. Our demonstration of multigap electronic topology will propel future research on unconventional topological responses.
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Affiliation(s)
- Tyler A Cochran
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Ilya Belopolski
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Kaustuv Manna
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Mohammad Yahyavi
- Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore
| | - Yiyuan Liu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Daniel S Sanchez
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Zi-Jia Cheng
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Xian P Yang
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Daniel Multer
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Jia-Xin Yin
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Horst Borrmann
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - Alla Chikina
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, Switzerland
| | - Jonas A Krieger
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, Switzerland
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, 5232 Villigen, Switzerland
| | - Jaime Sánchez-Barriga
- Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein Strasse 15, 12489 Berlin, Germany
- IMDEA Nanoscience, C/ Faraday 9, Campus de Cantoblanco, 28049 Madrid, Spain
| | - Patrick Le Fèvre
- SOLEIL Synchrotron, L'Orme des Merisiers, Départementale 128, F-91190 Saint-Aubin, France
| | - François Bertran
- SOLEIL Synchrotron, L'Orme des Merisiers, Départementale 128, F-91190 Saint-Aubin, France
| | | | - Jonathan D Denlinger
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan
| | - Shuang Jia
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - Hsin Lin
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Guoqing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore
| | - M Zahid Hasan
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
- Princeton Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, USA
- Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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47
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Cheng L, Xiong Y, Kang L, Gao Y, Chang Q, Chen M, Qi J, Yang H, Liu Z, Song JC, Chia EE. Giant photon momentum locked THz emission in a centrosymmetric Dirac semimetal. SCIENCE ADVANCES 2023; 9:eadd7856. [PMID: 36598995 PMCID: PMC9812375 DOI: 10.1126/sciadv.add7856] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2022] [Accepted: 11/28/2022] [Indexed: 06/17/2023]
Abstract
Strong second-order optical nonlinearities often require broken material centrosymmetry, thereby limiting the type and quality of materials used for nonlinear optical devices. Here, we report a giant and highly tunable terahertz (THz) emission from thin polycrystalline films of the centrosymmetric Dirac semimetal PtSe2. Our PtSe2 THz emission is turned on at oblique incidence and locked to the photon momentum of the incident pump beam. Notably, we find an emitted THz efficiency that is giant: It is two orders of magnitude larger than the standard THz-generating nonlinear crystal ZnTe and has values approaching that of the noncentrosymmetric topological material TaAs. Further, PtSe2 THz emission displays THz sign and amplitude that is controlled by the incident pump polarization and helicity state even as optical absorption is only weakly polarization dependent and helicity independent. Our work demonstrates how photon drag can activate pronounced optical nonlinearities that are available even in centrosymmetric Dirac materials.
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Affiliation(s)
- Liang Cheng
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Ying Xiong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Lixing Kang
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Yu Gao
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Mengji Chen
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Jingbo Qi
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
| | - Justin C.W. Song
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Elbert E. M. Chia
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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48
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Dong Y, Yang MM, Yoshii M, Matsuoka S, Kitamura S, Hasegawa T, Ogawa N, Morimoto T, Ideue T, Iwasa Y. Giant bulk piezophotovoltaic effect in 3R-MoS 2. NATURE NANOTECHNOLOGY 2023; 18:36-41. [PMID: 36411374 DOI: 10.1038/s41565-022-01252-8] [Citation(s) in RCA: 40] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Accepted: 10/03/2022] [Indexed: 06/16/2023]
Abstract
Given its innate coupling with wavefunction geometry in solids and its potential to boost the solar energy conversion efficiency, the bulk photovoltaic effect (BPVE) has been of considerable interest in the past decade1-14. Initially discovered and developed in ferroelectric oxide materials2, the BPVE has now been explored in a wide range of emerging materials, such as Weyl semimetals9,10, van der Waals nanomaterials11,12,14, oxide superlattices15, halide perovskites16, organics17, bulk Rashba semiconductors18 and others. However, a feasible experimental approach to optimize the photovoltaic performance is lacking. Here we show that strain-induced polarization can significantly enhance the BPVE in non-centrosymmetric rhombohedral-type MoS2 multilayer flakes (that is, 3R-MoS2). This polarization-enhanced BPVE, termed the piezophotovoltaic effect, exhibits distinctive crystallographic orientation dependence, in that the enhancement mainly manifests in the armchair direction of the 3R-MoS2 lattice while remaining largely intact in the zigzag direction. Moreover, the photocurrent increases by over two orders of magnitude when an in-plane tensile strain of ~0.2% is applied, rivalling that of state-of-the-art materials. This work unravels the potential of strain engineering in boosting the photovoltaic performance, which could potentially promote the exploration of novel photoelectric processes in strained two-dimensional layered materials and their van der Waals heterostructures.
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Affiliation(s)
- Yu Dong
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Ming-Min Yang
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Department of Physics, The University of Warwick, Coventry, UK
| | - Mao Yoshii
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Satoshi Matsuoka
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
- Graduate School of Engineering, Nagasaki University, Nagasaki, Japan
| | - Sota Kitamura
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Tatsuo Hasegawa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Naoki Ogawa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - Takahiro Morimoto
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Toshiya Ideue
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Japan
| | - Yoshihiro Iwasa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan.
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
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49
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Zhang C, Guo P, Zhou J. Tailoring Bulk Photovoltaic Effects in Magnetic Sliding Ferroelectric Materials. NANO LETTERS 2022; 22:9297-9305. [PMID: 36441961 DOI: 10.1021/acs.nanolett.2c02802] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The bulk photovoltaic effect that is intimately associated with crystalline symmetry has been extensively studied in various nonmagnetic materials, especially ferroelectrics with a switchable electric polarization. In order to further engineer the symmetry, one could resort to spin-polarized systems possessing an extra magnetic degree of freedom. Here, we investigate the bulk photovoltaic effect in two-dimensional magnetic sliding ferroelectric (MSFE) systems, illustrated in VSe2, FeCl2, and CrI3 bilayers. The transition metal elements in these systems exhibit intrinsic spin polarization, and the stacking mismatch between the two layers produces a finite out-of-plane electric dipole. Through symmetry analyses and first-principles calculations, we show that photoinduced in-plane bulk photovoltaic current can be effectively tuned by their magnetic order and the out-of-plane dipole moment. The underlying mechanism is elucidated from the quantum metric dipole distribution in the reciprocal space. The ease of the fabrication and manipulation of MSFEs guarantee practical optoelectronic applications.
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Affiliation(s)
- Chunmei Zhang
- School of Physics, Northwest University, Xi'an710069, China
| | - Ping Guo
- School of Physics, Northwest University, Xi'an710069, China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an710049, China
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50
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Bhalla P, Das K, Culcer D, Agarwal A. Resonant Second-Harmonic Generation as a Probe of Quantum Geometry. PHYSICAL REVIEW LETTERS 2022; 129:227401. [PMID: 36493457 DOI: 10.1103/physrevlett.129.227401] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2021] [Revised: 03/06/2022] [Accepted: 10/14/2022] [Indexed: 06/17/2023]
Abstract
Nonlinear responses are actively studied as probes of topology and band geometric properties of solids. Here, we show that second harmonic generation serves as a probe of the Berry curvature, quantum metric, and quantum geometric connection. We generalize the theory of second harmonic generation to include Fermi surface effects in metallic systems, and finite scattering timescale. In doped materials the Fermi surface and Fermi sea cause all second harmonic terms to exhibit resonances, and we identify two novel contributions to the second harmonic signal: a double resonance due to the Fermi surface and a higher-order pole due to the Fermi sea. We discuss experimental observation in the monolayer of time reversal symmetric Weyl semimetal WTe_{2} and the parity-time reversal symmetric topological antiferromagnet CuMnAs.
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Affiliation(s)
- Pankaj Bhalla
- Department of Physics, School of Engineering and Sciences, SRM University AP, Amaravati, 522240, India
- Beijing Computational Science Research Center, Beijing 100193, China
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, The University of New South Wales, Sydney 2052, Australia
| | - Kamal Das
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016, India
| | - Dimitrie Culcer
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, The University of New South Wales, Sydney 2052, Australia
- School of Physics, The University of New South Wales, Sydney 2052, Australia
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016, India
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