1
|
Zhang Y, Gao Y, Pulkkinen A, Guo X, Huang J, Guo Y, Yue Z, Oh JS, Moon A, Oudah M, Gao XJ, Marmodoro A, Fedorov A, Mo SK, Hashimoto M, Lu D, Rajapitamahuni A, Vescovo E, Kono J, Hallas AM, Birgeneau RJ, Balicas L, Minár J, Hosur P, Law KT, Morosan E, Yi M. Kramers nodal lines in intercalated TaS 2 superconductors. Nat Commun 2025; 16:4984. [PMID: 40442070 PMCID: PMC12122674 DOI: 10.1038/s41467-025-60020-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2024] [Accepted: 05/12/2025] [Indexed: 06/02/2025] Open
Abstract
Kramers degeneracy is one fundamental embodiment of the quantum mechanical nature of particles with half-integer spin under time reversal symmetry. Under the chiral and noncentrosymmetric achiral crystalline symmetries, Kramers degeneracy emerges respectively as topological quasiparticles of Weyl fermions and Kramers nodal lines (KNLs), anchoring the Berry phase-related physics of electrons. However, an experimental demonstration for ideal KNLs well isolated at the Fermi level is lacking. Here, we establish a class of noncentrosymmetric achiral intercalated transition metal dichalcogenide superconductors with large Ising-type spin-orbit coupling, represented by InxTaS2, to host an ideal KNL phase. We provide evidence from angle-resolved photoemission spectroscopy with spin resolution, angle-dependent quantum oscillation measurements, and ab-initio calculations. Our work not only provides a realistic platform for realizing and tuning KNLs in layered materials, but also paves the way for exploring the interplay between KNLs and superconductivity, as well as applications pertaining to spintronics, valleytronics, and nonlinear transport.
Collapse
Affiliation(s)
- Yichen Zhang
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA
| | - Yuxiang Gao
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA
| | - Aki Pulkkinen
- New Technologies Research Center, University of West Bohemia, Plzen, 301 00, Czech Republic
| | - Xingyao Guo
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Jianwei Huang
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA
| | - Yucheng Guo
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA
| | - Ziqin Yue
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, TX, 77005, USA
| | - Ji Seop Oh
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Alex Moon
- National High Magnetic Field Laboratory, Tallahassee, Tallahassee, FL, 32310, USA
- Physics Department, Florida State University, Tallahassee, FL, 32306, USA
| | - Mohamed Oudah
- Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, Vancouver, BC, V6T 1Z4, Canada
| | - Xue-Jian Gao
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Alberto Marmodoro
- New Technologies Research Center, University of West Bohemia, Plzen, 301 00, Czech Republic
| | - Alexei Fedorov
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, Berkeley, CA, 94720, USA
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, Berkeley, CA, 94720, USA
| | - Makoto Hashimoto
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA, 94025, USA
| | - Donghui Lu
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA, 94025, USA
| | - Anil Rajapitamahuni
- National Synchrotron Light Source II, Brookhaven National Lab, Upton, NY, 11973, USA
| | - Elio Vescovo
- National Synchrotron Light Source II, Brookhaven National Lab, Upton, NY, 11973, USA
| | - Junichiro Kono
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA
- Rice Center for Quantum Materials, Rice University, Houston, TX, 77005, USA
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
- Smalley-Curl Institute, Rice University, Houston, TX, 77005, USA
| | - Alannah M Hallas
- Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, Vancouver, BC, V6T 1Z4, Canada
- Department of Physics & Astronomy, University of British Columbia, Vancouver, Vancouver, BC, V6T 1Z1, Canada
- Canadian Institute for Advanced Research, Toronto, Toronto, ON, M5G 1M1, Canada
| | - Robert J Birgeneau
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, Berkeley, CA, 94720, USA
| | - Luis Balicas
- National High Magnetic Field Laboratory, Tallahassee, Tallahassee, FL, 32310, USA
- Physics Department, Florida State University, Tallahassee, FL, 32306, USA
| | - Ján Minár
- New Technologies Research Center, University of West Bohemia, Plzen, 301 00, Czech Republic
| | - Pavan Hosur
- Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX, 77204, USA
| | - Kam Tuen Law
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Emilia Morosan
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA.
- Rice Center for Quantum Materials, Rice University, Houston, TX, 77005, USA.
- Smalley-Curl Institute, Rice University, Houston, TX, 77005, USA.
| | - Ming Yi
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA.
- Rice Center for Quantum Materials, Rice University, Houston, TX, 77005, USA.
- Smalley-Curl Institute, Rice University, Houston, TX, 77005, USA.
| |
Collapse
|
2
|
Matsuyama K, Chen L, Aso K, Kanahashi K, Nagashio K, Oshima Y, Kiriya D. Phase Engineering of 1T'-MoS 2 via Organic Enwrapment. J Am Chem Soc 2025; 147:16729-16734. [PMID: 40333009 DOI: 10.1021/jacs.5c02099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/09/2025]
Abstract
Molybdenum disulfide (MoS2) is a layered material known to show various phases. Most studies on it have focused on its semiconductor phase, but it is known to also have a metallic 1T' phase. This 1T' phase has also drawn attention as a quantum spin Hall phase, but the 1T' phase is metastable, and methods for transforming or stabilizing it are still challenging. This Communication demonstrates a method for effectively transforming the monolayer or the topmost layer of multilayer semiconductor MoS2 (the 1H or 2H phase) into the 1T' phase via ultraviolet-ozone (UVO) treatment, followed by polymer enwrapment of the MoS2 surface. UVO induces the transformation of the 1H (2H) phase into the 1T' phase, but the generated phase is unstable. The enwrapment procedure with the polymer poly-l-lysine was found to be effective in transforming the 1H (2H) phase into the 1T' phase and stabilizing it. Moreover, this procedure transformed only the topmost layer and generated a vertical 1T'/2H heterostructure in multilayer cases. This study shows the high potential of surface organic chemical procedures to control the phases in 2D transition metal dichalcogenides.
Collapse
Affiliation(s)
- Keigo Matsuyama
- Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
| | - Limi Chen
- School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi-shi, Ishikawa 923-1292, Japan
| | - Kohei Aso
- School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi-shi, Ishikawa 923-1292, Japan
| | - Kaito Kanahashi
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Yoshifumi Oshima
- School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi-shi, Ishikawa 923-1292, Japan
| | - Daisuke Kiriya
- Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
| |
Collapse
|
3
|
da Silva THB, Cavignac T, Cerqueira TFT, Wang HC, Marques MAL. Machine-learning accelerated prediction of two-dimensional conventional superconductors. MATERIALS HORIZONS 2025; 12:3408-3419. [PMID: 39937617 DOI: 10.1039/d4mh01753f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/14/2025]
Abstract
We perform a large scale search for two-dimensional (2D) superconductors, by using electron-phonon calculations with density-functional perturbation theory combined with machine learning models. In total, we screened over 140 000 2D compounds from the Alexandria database. Our high-throughput approach revealed a multitude of 2D superconductors with diverse chemistries and crystal structures. Moreover, we find that 2D materials generally exhibit stronger electron-phonon coupling than their 3D counterparts, although their average phonon frequencies are lower, leading to an overall lower Tc. In spite of this, we discovered several out-of-distribution materials with relatively high-Tc. In total, 105 2D systems were found with Tc > 5 K. Some interesting compounds, such as CuH2, NbN, and V2NS2, demonstrate high Tc values and good thermodynamic stability, making them strong candidates for experimental synthesis and practical applications. Our findings highlight the critical role of computational databases and machine learning in accelerating the discovery of novel superconductors.
Collapse
Affiliation(s)
- Thalis H B da Silva
- CFisUC, Department of Physics, University of Coimbra, Rua Larga, 3004-516 Coimbra, Portugal
| | - Théo Cavignac
- Research Center Future Energy Materials and Systems of the University Alliance Ruhr and Interdisciplinary Centre for Advanced Materials Simulation, Ruhr University Bochum, Universitätsstraße 150, D-44801 Bochum, Germany.
| | - Tiago F T Cerqueira
- CFisUC, Department of Physics, University of Coimbra, Rua Larga, 3004-516 Coimbra, Portugal
| | - Hai-Chen Wang
- Research Center Future Energy Materials and Systems of the University Alliance Ruhr and Interdisciplinary Centre for Advanced Materials Simulation, Ruhr University Bochum, Universitätsstraße 150, D-44801 Bochum, Germany.
| | - Miguel A L Marques
- Research Center Future Energy Materials and Systems of the University Alliance Ruhr and Interdisciplinary Centre for Advanced Materials Simulation, Ruhr University Bochum, Universitätsstraße 150, D-44801 Bochum, Germany.
| |
Collapse
|
4
|
Zhao W, Zhou X, Yan D, Huang Y, Li C, Gao Q, Moras P, Sheverdyaeva PM, Rong H, Cai Y, Schwier EF, Zhang X, Shen C, Wang Y, Xu Y, Ji W, Liu C, Shi Y, Zhao L, Bao L, Wang Q, Shimada K, Tao X, Zhang G, Gao H, Xu Z, Zhou X, Liu G. Synthesis and electronic structure of atomically thin 2H-MoTe 2. NANOSCALE 2025; 17:10901-10909. [PMID: 40200842 DOI: 10.1039/d4nr05191b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2025]
Abstract
An in-depth understanding of the electronic structure of 2H-MoTe2 at the atomic layer limit is a crucial step towards its exploitation in nanoscale devices. Here, we show that millimeter-sized monolayer (ML) MoTe2 samples, as well as smaller sized bilayer (BL) samples, can be obtained using the mechanical exfoliation technique. The electronic structure of these materials is investigated by angle-resolved photoemission spectroscopy (ARPES) for the first time and by density functional theory (DFT) calculations. The comparison between experiments and theory allows us to describe ML MoTe2 as a semiconductor with a direct gap at the K point. This scenario is reinforced by the experimental observation of the conduction band minimum at K in Rb-doped ML MoTe2, resulting in a gap of at least 0.924 eV. In the BL MoTe2 system, the maxima of the bands at Γ and K show very similar energies, thus leaving the door open to a direct gap scenario, in analogy to WSe2. The monotonic increase in the separation between spin-split bands at K while moving from ML to BL and bulk-like MoTe2 is attributed to interlayer coupling. Our findings can be considered as a reference to understand quantum anomalous and fractional quantum anomalous Hall effects recently discovered in ML and BL MoTe2 based moiré heterostructures.
Collapse
Affiliation(s)
- Wenjuan Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
- CNR-Istituto di Struttura della Materia (CNR-ISM), SS 14, Km 163, 5, 34149 Trieste, Italy
| | - Xieyu Zhou
- Department of Physics, Renmin University of China, Beijing 100872, P.R. China
| | - Dayu Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuan Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Cong Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiang Gao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Paolo Moras
- CNR-Istituto di Struttura della Materia (CNR-ISM), SS 14, Km 163, 5, 34149 Trieste, Italy
| | - Polina M Sheverdyaeva
- CNR-Istituto di Struttura della Materia (CNR-ISM), SS 14, Km 163, 5, 34149 Trieste, Italy
| | - Hongtao Rong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongqing Cai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Eike F Schwier
- Research Institute for Synchrotron Radiation Science (HiSOR), Hiroshima University, Higashi-Hiroshima, Hiroshima 739-0046, Japan
| | - Xixia Zhang
- State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, Shandong, China
| | - Cheng Shen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yang Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yu Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Ji
- Department of Physics, Renmin University of China, Beijing 100872, P.R. China
| | - Chen Liu
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Lin Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Lihong Bao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Qingyan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Kenya Shimada
- Research Institute for Synchrotron Radiation Science (HiSOR), Hiroshima University, Higashi-Hiroshima, Hiroshima 739-0046, Japan
| | - Xutang Tao
- State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, Shandong, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hongjun Gao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zuyan Xu
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Xingjiang Zhou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Guodong Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| |
Collapse
|
5
|
Zhang Y, Shavit G, Ma H, Han Y, Siu CW, Mukherjee A, Watanabe K, Taniguchi T, Hsieh D, Lewandowski C, von Oppen F, Oreg Y, Nadj-Perge S. Twist-programmable superconductivity in spin-orbit-coupled bilayer graphene. Nature 2025; 641:625-631. [PMID: 40335702 DOI: 10.1038/s41586-025-08959-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2024] [Accepted: 04/01/2025] [Indexed: 05/09/2025]
Abstract
The relative twist angle between layers of near-lattice-matched van der Waals materials is critical for the emergent phenomena associated with moiré flat bands1-3. However, the concept of angle rotation control is not exclusive to moiré superlattices in which electrons directly experience a twist-angle-dependent periodic potential. Instead, it can also be used to induce programmable symmetry-breaking perturbations with the goal of stabilizing desired correlated states. Here we experimentally demonstrate 'moiréless' twist-tuning of superconductivity together with other correlated orders in Bernal bilayer graphene proximitized by tungsten diselenide. The precise alignment between the two materials systematically controls the strength of induced Ising spin-orbit coupling (SOC), profoundly altering the phase diagram. As Ising SOC is increased, superconductivity onsets at a higher displacement field and features a higher critical temperature, reaching up to 0.5 K. Within the main superconducting dome and in the strong Ising SOC limit, we find an unusual phase transition characterized by a nematic redistribution of holes among trigonally warped Fermi pockets and enhanced resilience to in-plane magnetic fields. The superconducting behaviour is theoretically compatible with the prominent role of interband interactions between symmetry-breaking Fermi pockets. Moreover, we identify two additional superconducting regions, one of which descends from an inter-valley coherent normal state and shows a Pauli-limit violation ratio exceeding 40, among the highest for all known superconductors4-7. Our results provide insights into ultraclean graphene superconductors and underscore the potential of utilizing moiréless-twist engineering across a wide range of van der Waals heterostructures.
Collapse
Affiliation(s)
- Yiran Zhang
- T. J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA, USA.
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA, USA.
- Department of Physics, California Institute of Technology, Pasadena, CA, USA.
| | - Gal Shavit
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA, USA
- Department of Physics, California Institute of Technology, Pasadena, CA, USA
- Walter Burke Institute of Theoretical Physics, California Institute of Technology, Pasadena, CA, USA
| | - Huiyang Ma
- National High Magnetic Field Laboratory, Tallahassee, FL, USA
- Department of Physics, Florida State University, Tallahassee, FL, USA
| | - Youngjoon Han
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA, USA
- Department of Physics, California Institute of Technology, Pasadena, CA, USA
| | - Chi Wang Siu
- T. J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA, USA
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA, USA
| | - Ankan Mukherjee
- T. J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA, USA
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA, USA
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | | | - David Hsieh
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA, USA
- Department of Physics, California Institute of Technology, Pasadena, CA, USA
| | - Cyprian Lewandowski
- National High Magnetic Field Laboratory, Tallahassee, FL, USA
- Department of Physics, Florida State University, Tallahassee, FL, USA
| | - Felix von Oppen
- Dahlem Center for Complex Quantum Systems and Fachbereich Physik, Freie Universität Berlin, Berlin, Germany
| | - Yuval Oreg
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Stevan Nadj-Perge
- T. J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA, USA.
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA, USA.
| |
Collapse
|
6
|
Zheng B, Zhang X, Wang K, Li R, Cao J, Wang C, Tan H, Li Z, Lin B, Li P, Xi C, Zhang J, Lu Y, Zhu W, Liu Z, Yang SA, Li LJ, Liu F, Xiang B. 3D Ising Superconductivity in As-Grown Sn Intercalated TaSe 2 Crystal. NANO LETTERS 2025; 25:4895-4903. [PMID: 40094488 DOI: 10.1021/acs.nanolett.5c00196] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/19/2025]
Abstract
2D Ising superconductivity emerges in noncentrosymmetric 2D materials, differing from conventional 2D/3D superconductivity. Here, we report the synthesis of a new polymorph of intercalated layered materials, where two layers of Sn are intercalated in between every two layers of TaSe2 (2Sn-2TaSe2), in contrast to the commonly observed single-layer intercalation. Remarkably, the as-grown 2Sn-2TaSe2 single crystals possess a high quality of crystallinity and showcase 3D Ising superconductivity. Transport measurements and theoretical calculations show that the 2Sn-2TaSe2 having C3v point group symmetry induces formation of Ising pairs, which intriguingly exhibits, on one hand, an in-plane upper critical field surpassing the Pauli limit by a factor of 2.6 like a 2D Ising superconductor but, on the other hand, a temperature- and field-dependent conductivity characteristic of conventional 3D superconductivity. Our findings demonstrate the persistent 2D Ising pairing in 3D, paving the way for exploring dimensional physical behaviors by intercalating layered materials.
Collapse
Affiliation(s)
- Bo Zheng
- Department of Materials Science & Engineering, Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Xiaoming Zhang
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China
| | - Kaipu Wang
- School of Physical Science and Technology, ShanghaiTech University, 201210 Shanghai, China
| | - Ruimin Li
- Department of Materials Science & Engineering, Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Jin Cao
- Research Laboratory for Quantum Materials, IAPME, University of Macau, Macau, China
| | - Changlong Wang
- Department of Materials Science & Engineering, Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Haige Tan
- Department of Materials Science & Engineering, Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Zhidong Li
- School of Microelectronics, University of Science and Technology of China, Hefei 230052, China
| | - Benchuan Lin
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Peng Li
- School of Microelectronics, University of Science and Technology of China, Hefei 230052, China
| | - Chuanying Xi
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
| | - Jingmin Zhang
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Yalin Lu
- Department of Materials Science & Engineering, Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Heifei 230088, China
| | - Wenguang Zhu
- Hefei National Laboratory, University of Science and Technology of China, Heifei 230088, China
- International Center for Quantum Design of Functional Materials (ICQD), Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University, 201210 Shanghai, China
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, IAPME, University of Macau, Macau, China
| | - Lain-Jong Li
- Department of Mechanical Engineering and Department of Physics, The University of Hong Kong, Hong Kong 999077, China
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
| | - Bin Xiang
- Department of Materials Science & Engineering, Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Heifei 230088, China
| |
Collapse
|
7
|
Zhong W, Zhang H, Hong F, Yue B. Superconductivity in metal sulfides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2025; 37:173002. [PMID: 40054069 DOI: 10.1088/1361-648x/adbe1c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2024] [Accepted: 03/07/2025] [Indexed: 03/22/2025]
Abstract
The exploration of high-temperature superconductors and the mechanisms underlying superconductivity continues to present significant challenges in condensed matter physics. Identifying new potential superconducting (SC) platforms is critical for advancing our understanding of superconductivity and its interactions with other quantum states. Metal sulfides constitute a diverse family of materials that exhibit unique physical properties, with crystal structures that can be tailored from one-dimensional (1D) to three-dimensional (3D) by varying the metal-to-sulfur ratio. Recent investigations into the superconductivity of metal sulfides have revealed extraordinary quantum phenomena, including chiral superconductivity, two-dimensional (2D) Ising superconductivity, and the competition between charge density waves and superconductivity. Furthermore, pressure tuning-a refined technique for modifying electronic and crystal structures without introducing impurities-has facilitated the emergence of superconductivity in various semiconducting and even insulating metal sulfides. In this review, we summarize and analyze the rich SC properties of metal sulfides, encompassing 3D metal monosulfides, 2D metal disulfides, and quasi-1D transition metal trisulfides. We also discuss additional systems, including hydrogen sulfides, Th3P4-type sulfides, and Bi-S systems. Collectively, these findings underscore that metal sulfides not only represent promising SC materials but also serve as excellent platforms for further investigation into the mechanisms of superconductivity.
Collapse
Affiliation(s)
- Wei Zhong
- Center for High Pressure Science & Technology Advanced Research, 10 East Xibeiwang Road, Haidian, Beijing 100193, People's Republic of China
| | - He Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Fang Hong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Binbin Yue
- Center for High Pressure Science & Technology Advanced Research, 10 East Xibeiwang Road, Haidian, Beijing 100193, People's Republic of China
| |
Collapse
|
8
|
Yang J, Shi X, Ye S, Yoon C, Lu Z, Kakani V, Han T, Seo J, Shi L, Watanabe K, Taniguchi T, Zhang F, Ju L. Impact of spin-orbit coupling on superconductivity in rhombohedral graphene. NATURE MATERIALS 2025:10.1038/s41563-025-02156-3. [PMID: 40108416 DOI: 10.1038/s41563-025-02156-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2024] [Accepted: 01/27/2025] [Indexed: 03/22/2025]
Abstract
Spin-orbit coupling (SOC) has played an important role in many topological and correlated electron materials. In graphene-based systems, SOC induced by a transition metal dichalcogenide at close proximity has been shown to drive topological states and strengthen superconductivity. However, in rhombohedral multilayer graphene, a robust platform for electron correlation and topology, superconductivity and the role of SOC remain largely unexplored. Here we report transport measurements of transition metal dichalcogenide-proximitized rhombohedral trilayer graphene. We observed a hole-doped superconducting state SC4 with a critical temperature of 234 mK. On the electron-doped side, we noted an isospin-symmetry-breaking three-quarter-metal phase and observed that the nearby weak superconducting state SC3 is substantially enhanced. Surprisingly, the original superconducting state SC1 in bare rhombohedral trilayer graphene is strongly suppressed in the presence of transition metal dichalcogenide-opposite to the effect of SOC on all other graphene superconductivities. Our observations form the basis of exploring superconductivity and non-Abelian quasiparticles in rhombohedral graphene devices.
Collapse
Affiliation(s)
- Jixiang Yang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Xiaoyan Shi
- Department of Physics, The University of Texas at Dallas, Richardson, TX, USA
| | - Shenyong Ye
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chiho Yoon
- Department of Physics, The University of Texas at Dallas, Richardson, TX, USA
| | - Zhengguang Lu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Vivek Kakani
- Department of Physics, The University of Texas at Dallas, Richardson, TX, USA
| | - Tonghang Han
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Junseok Seo
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Lihan Shi
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Fan Zhang
- Department of Physics, The University of Texas at Dallas, Richardson, TX, USA
| | - Long Ju
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| |
Collapse
|
9
|
Nong H, Tan J, Sun Y, Zhang R, Gu Y, Wei Q, Wang J, Zhang Y, Wu Q, Zou X, Liu B. Cu Intercalation-Stabilized 1T' MoS 2 with Electrical Insulating Behavior. J Am Chem Soc 2025; 147:9242-9249. [PMID: 39899806 DOI: 10.1021/jacs.4c14945] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2025]
Abstract
The intercalated two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much attention for their designable structures and novel properties. Among this family, host materials with low symmetry such as 1T' phase TMDCs are particularly interesting because of their potentials in inducing unconventional phenomena. However, such systems typically have low quality and poor stability, hindering further study of the structure-property relationship and applications. In this work, we intercalated Cu into 1T' MoS2 with high crystallinity and high thermal stability up to ∼300 °C. We identified the distribution and arrangement of Cu intercalators for the first time, and the results show that Cu intercalators occupy partially the tetrahedral interstices aligned with Mo sites. The obtained Cu-1T' MoS2 exhibits an insulating hopping transport behavior with a large temperature coefficient of resistance reaching -4∼-2%·K-1. This work broadens the artificial intercalated structure library and promotes the structure design and property modulation of layered materials.
Collapse
Affiliation(s)
- Huiyu Nong
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China
| | - Yujie Sun
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China
| | - Rongjie Zhang
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China
| | - Yue Gu
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China
- Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Qiang Wei
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China
| | - Jingwei Wang
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China
| | - Yunhao Zhang
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China
| | - Qinke Wu
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China
| |
Collapse
|
10
|
Liang J, Ma K, Walker E, Johnson C, Zhao X, Terlier T, Thomas JC, Wan J, Dale N, Rotenberg E, Bostwick A, Jozwiak C, Jang JW, Salmeron M, Ashby PD, Kim J, Zheng H, Weber-Bargioni A, Beechem T, Sherburne MP, Al Balushi ZY. Spatially Enhanced Electrostatic Doping in Graphene Realized via Heterointerfacial Precipitated Metals. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025:e2412750. [PMID: 40087847 DOI: 10.1002/smll.202412750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2024] [Revised: 02/28/2025] [Indexed: 03/17/2025]
Abstract
Forming heavily-doped regions in 2D materials, like graphene, is a steppingstone to the design of emergent devices and heterostructures. Here, a selective-area approach is presented to tune the work-function and carrier density in monolayer graphene by spatially synthesizing sub-monolayer gallium beneath the 2D-solid. The localized metallic gallium is formed via precipitation from an underlying diamond-like carbon (DLC) film that is spatially implanted with gallium-ions. By controlling the interfacial precipitation process with annealing temperature, spatially precise ambipolar tuning of the graphene work-function is achieved, and the tunning effect preserved upon cooling to ambient conditions. Consequently, charge carrier densities from ≈1.8 × 1010 cm-2 (hole-doped) to ≈7 × 1013 cm-2 (electron-doped) are realized, confirmed by in situ and ex situ measurements. The theoretical studies corroborated the role of gallium at the heterointerface on charge transfer and electrostatic doping of the graphene overlayer. Specifically, sub-monolayer gallium facilitates heavy n-doping in graphene. Extending this doping strategy to other implantable elements in DLC provides a new means of exploring the physics and chemistry of highly-doped 2D materials.
Collapse
Affiliation(s)
- Jiayun Liang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Ke Ma
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Edward Walker
- School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA
| | - Cameron Johnson
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Xiao Zhao
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Tanguy Terlier
- Shared Equipment Authority, SIMS Laboratory, Rice University, Houston, TX, 77005, USA
| | - John C Thomas
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jiawei Wan
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Nicholas Dale
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Eli Rotenberg
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Aaron Bostwick
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Chris Jozwiak
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Ji-Woong Jang
- Department of Extreme Environmental Coating, Korea Institute of Materials Science (KIMS), Changwon, 51508, Republic of Korea
- Department of Mechanical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Miquel Salmeron
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Paul D Ashby
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jongkuk Kim
- Department of Extreme Environmental Coating, Korea Institute of Materials Science (KIMS), Changwon, 51508, Republic of Korea
| | - Haimei Zheng
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | | | - Thomas Beechem
- School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA
| | - Matthew P Sherburne
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Zakaria Y Al Balushi
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| |
Collapse
|
11
|
Jameel MH, Yasin A, Tuama AN, Jabbar AH, Kousar S, Mayzan MZH, Roslan MS, Nawaz A, Althubeiti K, Aljohani M. Benchmarking the high conductive two-dimensional layered structured NbS 2, ZrS 2, ReS 2 and NbSe 2 materials with zero energy bandgap ( E g) for photocatalytic application: a DFT study. ROYAL SOCIETY OPEN SCIENCE 2025; 12:241560. [PMID: 40061220 PMCID: PMC11888576 DOI: 10.1098/rsos.241560] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/14/2024] [Revised: 12/01/2024] [Accepted: 12/19/2024] [Indexed: 05/28/2025]
Abstract
Two-dimensional materials are among the most scientifically accessible materials in material science at the beginning of the twenty-first century. There has been interest in the monolayer transition metal dichalcogenide (TMDC) family because of its large active site surface area for UV photons of light for wastewater treatment. In the present work, density functional theory (DFT) is utilized to model the optical, structural and electrical properties of TMDCs such as NbS2, ZrS2, ReS2 and NbSe2 using the GGA-PBE simulation approximation. Based on DFT calculations, it is determined that NbS2, ZrS2, ReS2 and NbSe2 have zero energy bandgap (E g). The additional gamma-active states that are generated in NbS2, ZrS2, ReS2 and NbSe2 materials aid in the construction of the conduction and valence bands, resulting in a zero E g. In the ultraviolet (UV) spectrum, the increase in optical conductance peaks from 4.5 to 15.7 suggests that the material exhibits stronger absorption or interaction with UV light due to the excitation of electronic transitions or inter-band transitions. The highest optical conductivity and absorbance of two-dimensional TMDCs NbS2, ZrS2, NbSe2 and ReS2 show 2.4 × 105, 2.5 × 105, 2.8 × 105 and 7 × 105Ω - 1 c m - 1 , respectively. The TMDC family, including two-dimensional TMDCs NbS2, ZrS2, NbSe2 and ReS2, is known for its unique electronic and optical properties. Their layered structure and high surface area make them excellent candidates for applications involving light absorption and photodetection. These materials reduce photon recombination and improve charge transport, making them suitable for photocatalytic and photoanode applications.
Collapse
Affiliation(s)
- Muhammad Hasnain Jameel
- Department of Physics and Chemistry, Faculty of Applied Sciences and Technology (FAST), Universiti Tun Hussein Onn Malaysia, Muar, Johor84600, Malaysia
- Ceramic and Amorphous Group (CerAm), Faculty of Applied Sciences and Technology, Pagoh Higher Education Hub, Universiti Tun Hussein Onn Malaysia, Panchor, Johor84600, Malaysia
| | - Aqeela Yasin
- School of Materials Science and Engineering and Henan Key Laboratory of Advanced Magnesium Alloy and Key Laboratory of Materials Processing and Mold Technology (Ministry of Education), Zhengzhou University, Zhengzhou, People’s Republic of China
| | - Alaa Nihad Tuama
- Department of Physics, College of Education for Pure Sciences, University of Babylon, Babylon, Iraq
| | | | - Samreen Kousar
- Department of Chemistry, University of Sahiwal, Sahiwal, Pakistan
| | - Mohd Zul Hilmi Mayzan
- Department of Physics and Chemistry, Faculty of Applied Sciences and Technology (FAST), Universiti Tun Hussein Onn Malaysia, Muar, Johor84600, Malaysia
- Ceramic and Amorphous Group (CerAm), Faculty of Applied Sciences and Technology, Pagoh Higher Education Hub, Universiti Tun Hussein Onn Malaysia, Panchor, Johor84600, Malaysia
| | - Muhammad Sufi Roslan
- Department of Physics and Chemistry, Faculty of Applied Sciences and Technology (FAST), Universiti Tun Hussein Onn Malaysia, Muar, Johor84600, Malaysia
| | - Arman Nawaz
- Department of Physics, University of Agriculture Faisalabad, Faisalabad38040, Pakistan
| | - Khaled Althubeiti
- Department of Chemistry, College of Science, Taif University, PO Box 110, Taif21944, Saudi Arabia
| | - Mohammed Aljohani
- Department of Chemistry, College of Science, Taif University, PO Box 110, Taif21944, Saudi Arabia
| |
Collapse
|
12
|
Liu Y, Wang Z, Hu G, Chen X, Xu K, Guo Y, Xie Y, Wu C. Precision Intercalation of Organic Molecules in 2D Layered Materials: From Interface Chemistry to Low-Dimensional Physics. PRECISION CHEMISTRY 2025; 3:51-71. [PMID: 40018453 PMCID: PMC11863159 DOI: 10.1021/prechem.4c00084] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/23/2024] [Revised: 12/27/2024] [Accepted: 12/30/2024] [Indexed: 03/01/2025]
Abstract
The past few decades have witnessed significant development in intercalation chemistry research aimed at precisely controlling material properties. Intercalation, as a powerful surface and interface synthesis strategy, facilitates the insertion of external guests into van der Waals (vdW) gaps in two-dimensional (2D) layered materials, inducing various modulation effects (the weakening of interlayer interactions, changes in electronic structures, interfacial charge transfer, and symmetry manipulation) to tailor material properties while preserving intralayer covalent bonds. Importantly, benefiting from the very diverse structures and properties of organic molecules, their intercalation enables the integration of various molecules with a wide array of 2D materials, resulting in the creation of numerous organic-inorganic hybrid superlattices with exotic properties, which brings extensive potential applications in fields such as spintronics, superconductor electronics, optoelectronics, and thermoelectrics. Herein, based on recent advancements in organic intercalation systems, we briefly discuss a summary and classification of various organic guest species. We also discuss three modulation effects induced by organic intercalation and further introduce intriguing modulations in physicochemical properties, including superconductivity, magnetism, thermoelectricity and thermal conductivity, chiral-induced spin selectivity (CISS) effects, and interlayer-confined chemical reaction. Finally, we offer insights into future research opportunities and emerging challenges in organic intercalation systems.
Collapse
Affiliation(s)
- Yang Liu
- State
Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory
of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Ziren Wang
- State
Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory
of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Guoliang Hu
- State
Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory
of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Xiaomeng Chen
- State
Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory
of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Ke Xu
- State
Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory
of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Yuqiao Guo
- State
Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory
of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Yi Xie
- State
Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory
of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Changzheng Wu
- State
Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory
of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| |
Collapse
|
13
|
Powell L, Kuang W, Hawkins-Pottier G, Jalil R, Birkbeck J, Jiang Z, Kim M, Zou Y, Komrakova S, Haigh S, Timokhin I, Balakrishnan G, Geim AK, Walet N, Principi A, Grigorieva IV. Multiphase superconductivity in PdBi 2. Nat Commun 2025; 16:291. [PMID: 39746941 PMCID: PMC11696495 DOI: 10.1038/s41467-024-54867-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Accepted: 11/22/2024] [Indexed: 01/04/2025] Open
Abstract
Unconventional superconductivity, where electron pairing does not involve electron-phonon interactions, is often attributed to magnetic correlations in a material. Well known examples include high-Tc cuprates and uranium-based heavy fermion superconductors. Less explored are unconventional superconductors with strong spin-orbit coupling, where interactions between spin-polarised electrons and external magnetic field can result in multiple superconducting phases and field-induced transitions between them, a rare phenomenon in the superconducting state. Here we report a magnetic-field driven phase transition in β-PdBi2, a layered non-magnetic superconductor. Our tunnelling spectroscopy on thin PdBi2 monocrystals incorporated in planar superconductor-insulator-normal metal junctions reveals a marked discontinuity in the superconducting properties with increasing in-plane field, which is consistent with a transition from conventional (s-wave) to nodal pairing. Our theoretical analysis suggests that this phase transition may arise from spin polarisation and spin-momentum locking caused by locally broken inversion symmetry, with p-wave pairing becoming energetically favourable in high fields. Our findings also reconcile earlier predictions of unconventional multigap superconductivity in β-PdBi2 with previous experiments where only a single s-wave gap could be detected.
Collapse
Affiliation(s)
- Lewis Powell
- Department of Physics and Astronomy, University of Manchester, Manchester, UK.
| | - Wenjun Kuang
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Innovation Institute of Defense Technology, AMS, Beijing, China
| | | | - Rashid Jalil
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
| | - John Birkbeck
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
| | - Ziyi Jiang
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
| | - Minsoo Kim
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
| | - Yichao Zou
- Department of Materials, University of Manchester, Manchester, UK
| | - Sofiia Komrakova
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
| | - Sarah Haigh
- Department of Materials, University of Manchester, Manchester, UK
| | - Ivan Timokhin
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
| | | | - Andre K Geim
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Niels Walet
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
| | - Alessandro Principi
- Department of Physics and Astronomy, University of Manchester, Manchester, UK.
| | - Irina V Grigorieva
- Department of Physics and Astronomy, University of Manchester, Manchester, UK.
- National Graphene Institute, University of Manchester, Manchester, UK.
| |
Collapse
|
14
|
Sun X, Deng Z, Yang Y, Yu S, Huang Y, Lu Y, Tao Q, Shen DW, He WY, Xi C, Pi L, Watanabe K, Taniguchi T, Xu ZA, Zheng Y. Tunable Mirror-Symmetric Type-III Ising Superconductivity in Atomically-Thin Natural Van der Waals Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2411655. [PMID: 39632468 DOI: 10.1002/adma.202411655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2024] [Revised: 11/23/2024] [Indexed: 12/07/2024]
Abstract
Van der Waals (vdW) crystals with strong spin-orbit coupling (SOC) provide great opportunities for exploring unconventional 2D superconductors, wherein new pairing states emerge due to the interplay of SOC with crystalline symmetries, electronic correlations, quenched disorders and external modulation forces, etc. Here, a distinct mirror-symmetry protected Ising pairing state with unprecedented Γ- and M-valley symmetries in natural vdW heterostructures (vdWH) of interweaving tetragonal SnSe and trigonal 1H-TaSe2 monolayers is reported, in which the unidirectional lattice interlocking effectively suppresses the K-valley Ising pairing mechanism by incommensurate charge-density-wave (CDW) transitions. In the 2D limit of an TaSe2/SnSe bilayer with intact basal mirror symmetry (Mz), the mirror-symmetric vdWH Ising superconductors show anomalous in-plane magnetic field B‖-controlled enhancements in the critical temperature Tc, which is completely absent for multilayer vdWHs with broken Mz induced by orthorhombic stacking between nearest-neighbour TaSe2 monolayers. The experimental observations consistently reveal a mirror symmetry-protected type-III Ising state in the inversion asymmetric lattice of 1H-TaSe2, which is predicted to be a mixture of spin-singlet and spin-triplet states.
Collapse
Affiliation(s)
- Xikang Sun
- School of Physics, and State Key Laboratory of Silicon Materials and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Zhengkuan Deng
- School of Physics, and State Key Laboratory of Silicon Materials and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Yichen Yang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai, 200050, China
| | - Shuang Yu
- School of Physics, and State Key Laboratory of Silicon Materials and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Yuqiang Huang
- School of Physics, and State Key Laboratory of Silicon Materials and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Yunhao Lu
- School of Physics, and State Key Laboratory of Silicon Materials and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Qian Tao
- School of Physics, and State Key Laboratory of Silicon Materials and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Da-Wei Shen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai, 200050, China
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China
| | - Wen-Yu He
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Chuanying Xi
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, 230031, China
| | - Li Pi
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, 230031, China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Zhu-An Xu
- School of Physics, and State Key Laboratory of Silicon Materials and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Yi Zheng
- School of Physics, and State Key Laboratory of Silicon Materials and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| |
Collapse
|
15
|
Huang W, Lin H, Yin Y, Zheng C, Chen W, Ji L, Hughes J, Kusmartsev F, Kusmartseva A, Xue QK, Chen X, Ji SH. Landau-Level Quantization and Band Splitting of FeSe Monolayers Revealed by Scanning Tunneling Spectroscopy. NANO LETTERS 2024; 24:16309-16316. [PMID: 39556105 DOI: 10.1021/acs.nanolett.4c04461] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2024]
Abstract
Two-dimensional (2D) superconductors that reside on substrates must be influenced by Rashba spin-orbit coupling (SOC). The intriguing effect of Rashba-type SOCs on iron-based superconductors (IBSs) has remained largely a mystery. In this work, we unveil modified Landau-level spectroscopy and the intricate band splitting of FeSe monolayers through the precision of scanning tunneling spectroscopy, which unequivocally demonstrates the presence of Rashba SOC. The discovery sheds light on a nonparabolic electron band at the X and/orY point, displaying a distinctive Landau quantization behavior characterized by En ∝ (nB)4/3. The theoretical model aligns with our experimental insights, positing that the k4-term of the electron band becomes predominant and profoundly reshapes the band structure. Our results underscore the pivotal role of the Rashba SOC effect on 2D superconductors and set the stage to probe new quantum states in systems with remarkably low carrier concentrations.
Collapse
Affiliation(s)
- Wantong Huang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Haicheng Lin
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yuguo Yin
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Cheng Zheng
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wei Chen
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Lichen Ji
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Jack Hughes
- College of Engineering and Physical Sciences, Khalifa University, PO Box 127788, Abu Dhabi, United Arab Emirates
| | - Fedor Kusmartsev
- College of Engineering and Physical Sciences, Khalifa University, PO Box 127788, Abu Dhabi, United Arab Emirates
- Physics Department, Loughborough University, Loughborough LE11 3TU, U.K
| | - Anna Kusmartseva
- Physics Department, Loughborough University, Loughborough LE11 3TU, U.K
| | - Qi-Kun Xue
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Xi Chen
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Shuai-Hua Ji
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| |
Collapse
|
16
|
Samarawickrama P, McBride J, Gautam S, Fu Z, Watanabe K, Taniguchi T, Wang W, Tang J, Ackerman J, Leonard BM, Tian J. Crossover from Conventional to Unconventional Superconductivity in 2M-WS 2. NANO LETTERS 2024; 24:16184-16190. [PMID: 39639194 DOI: 10.1021/acs.nanolett.4c05257] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2024]
Abstract
Leveraging the reciprocal-space proximity effect between superconducting bulk and topological surface states (TSSs) offers a promising way to topological superconductivity. However, elucidating the mutual influence of bulk and TSSs on topological superconductivity remains a challenge. Here, we report pioneering transport evidence of a thickness-dependent transition from conventional to unconventional superconductivity in 2M-phase WS2 (2M-WS2). As the sample thickness reduces, we see clear changes in key superconducting metrics, including critical temperature, critical current, and carrier density. Notably, while thick 2M-WS2 samples show conventional superconductivity, with an in-plane (IP) upper critical field constrained by the Pauli limit, samples under 20 nm exhibit a pronounced IP critical field enhancement, inversely correlated with 2D carrier density. This marks a distinct crossover to unconventional superconductivity with strong spin-orbit-parity coupling. Our findings underscore the crucial role of sample thickness in accessing topological states in 2D topological superconductors, offering pivotal insights into future studies of topological superconductivity.
Collapse
Affiliation(s)
- Piumi Samarawickrama
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
- Center for Quantum Information Science and Engineering, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Joseph McBride
- Department of Chemistry, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Sabin Gautam
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
- Center for Quantum Information Science and Engineering, University of Wyoming, Laramie, Wyoming 82071, United States
| | - ZhuangEn Fu
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
- Center for Quantum Information Science and Engineering, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Wenyong Wang
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
- Center for Quantum Information Science and Engineering, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Jinke Tang
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
- Center for Quantum Information Science and Engineering, University of Wyoming, Laramie, Wyoming 82071, United States
| | - John Ackerman
- Department of Chemical and Biomedical Engineering, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Brian M Leonard
- Center for Quantum Information Science and Engineering, University of Wyoming, Laramie, Wyoming 82071, United States
- Department of Chemistry, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Jifa Tian
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
- Center for Quantum Information Science and Engineering, University of Wyoming, Laramie, Wyoming 82071, United States
| |
Collapse
|
17
|
Bae S, Miyamoto I, Kiyohara S, Kumagai Y. Universal Polaronic Behavior in Elemental Doping of MoS 2 from First-Principles. ACS NANO 2024; 18:33988-33997. [PMID: 39622529 DOI: 10.1021/acsnano.4c08366] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/18/2024]
Abstract
Elemental doping of two-dimensional (2D) semiconductors is crucial for manipulating their electrical and optical properties and enhancing the performance of advanced 2D devices. However, doping methods, such as ion implantation and chemical vapor deposition, can produce various outcomes extensively, depending on the chemical environment. We systematically study the elemental doping of the monolayer MoS2 by using density-functional theory calculations, which identify thermally stable sites among atomic substitutions, surface adsorption, and lattice interstitials of 27 elemental dopants, along with their formation energies and charge transition levels. By adopting the Koopmans-compliant hybrid functionals, the hydrogenic states predicted by semilocal functionals transform into localized polaronic states, which universally exhibit deep transitions located 1.0 eV away from the band edges. This polaronic behavior persists even in bulk MoS2, which suggests impurity conduction as the predominant carrier conduction mechanism. Our study offers fundamental insights into elemental doping in MoS2, which could be essential for doping transition metal dichalcogenides and similar 2D semiconductors.
Collapse
Affiliation(s)
- Soungmin Bae
- Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
| | - Ibuki Miyamoto
- Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
| | - Shin Kiyohara
- Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
| | - Yu Kumagai
- Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
| |
Collapse
|
18
|
Shi M, Fan K, Li H, Pan S, Cai J, Zhang N, Li H, Wu T, Zhang J, Xi C, Xiang Z, Chen X. Two-Dimensional Superconductivity and Anomalous Vortex Dissipation in Newly Discovered Transition Metal Dichalcogenide-Based Superlattices. J Am Chem Soc 2024; 146:33413-33422. [PMID: 39582327 DOI: 10.1021/jacs.4c09248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2024]
Abstract
Properties of layered superconductors can vary drastically when thinned down from bulk to monolayer owing to the reduced dimensionality and weakened interlayer coupling. In transition metal dichalcogenides (TMDs), the inherent symmetry breaking effect in atomically thin crystals prompts novel states of matter such as Ising superconductivity with an extraordinary in-plane upper critical field. Here, we demonstrate that two-dimensional (2D) superconductivity resembling those in atomic layers but with more fascinating behaviors can be realized in the bulk crystals of two new TMD-based superconductors Ba0.75ClTaS2 and Ba0.75ClTaSe2 with superconducting transition temperatures 2.75 and 1.75 K, respectively. They comprise an alternating stack of H-type TMD layers and Ba-Cl layers. In both materials, intrinsic 2D superconductivity develops below a Berezinskii-Kosterlitz-Thouless transition. The upper critical field along the ab plane (H c 2 | | a b ) exceeds the Pauli limit (μ0Hp); in particular, Ba0.75ClTaSe2 exhibits an extremely high μ 0 H c 2 | | a b ≈ 14 μ0Hp and a colossal superconducting anisotropy (H c 2 | | a b /H c 2 ⊥ a b ) of ∼150. Moreover, the temperature-field phase diagram of Ba0.75ClTaSe2 under an in-plane magnetic field contains a large phase regime of vortex dissipation, which can be ascribed to the Josephson vortex motion, signifying an unprecedentedly strong fluctuation effect in TMD-based superconductors. Our results provide a new path toward the establishment of 2D superconductivity and novel exotic quantum phases in bulk crystals of TMD-based superconductors.
Collapse
Affiliation(s)
- Mengzhu Shi
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Kaibao Fan
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Houpu Li
- Department of Physics and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Senyang Pan
- Department of Physics and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Jiaqiang Cai
- Department of Physics and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Nan Zhang
- Department of Physics and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Hongyu Li
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Tao Wu
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Jinglei Zhang
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Chuanying Xi
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Ziji Xiang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Xianhui Chen
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Physics and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| |
Collapse
|
19
|
Jung SW, Watson MD, Mukherjee S, Evtushinsky DV, Cacho C, Martino E, Berger H, Kim TK. Holstein Polarons, Rashba-Like Spin Splitting, and Ising Superconductivity in Electron-Doped MoSe 2. ACS NANO 2024; 18:33359-33365. [PMID: 39592141 PMCID: PMC11636255 DOI: 10.1021/acsnano.4c07805] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2024] [Revised: 10/29/2024] [Accepted: 11/05/2024] [Indexed: 11/28/2024]
Abstract
Interaction between electrons and phonons in solids is a key effect defining the physical properties of materials, such as electrical and thermal conductivity. In transition metal dichalcogenides (TMDCs), the electron-phonon coupling results in the formation of polarons, quasiparticles that manifest themselves as discrete features in the electronic spectral function. In this study, we report the formation of polarons at the alkali-dosed MoSe2 surface, where Rashba-like spin splitting of the conduction band states is caused by an inversion-symmetry breaking electric field. In addition, we observed a crossover from phonon-like to plasmon-like polaronic spectral features at the MoSe2 surface with increasing doping. Our findings support the concept of electron-phonon coupling-mediated superconductivity in electron-doped layered TMDC materials, as observed using ionic liquid gating technology. Furthermore, the discovered spin-splitting at the Fermi level could offer crucial experimental validation for theoretical models of Ising-type superconductivity in these materials.
Collapse
Affiliation(s)
- Sung Won Jung
- Diamond
Light Source, Harwell
Science and Innovation Campus, Didcot OX11 0DE, U.K.
- Department
of Physics and Research Institute of Molecular Alchemy, Gyeongsang National University, Jinju 52828, Republic
of Korea
| | - Matthew D. Watson
- Diamond
Light Source, Harwell
Science and Innovation Campus, Didcot OX11 0DE, U.K.
| | - Saumya Mukherjee
- Diamond
Light Source, Harwell
Science and Innovation Campus, Didcot OX11 0DE, U.K.
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Amsterdam 1098 XH, Netherlands
| | | | - Cephise Cacho
- Diamond
Light Source, Harwell
Science and Innovation Campus, Didcot OX11 0DE, U.K.
| | - Edoardo Martino
- École
Polytechnique Fédérale de Lausanne, Lausanne CH-1015, Switzerland
| | - Helmuth Berger
- École
Polytechnique Fédérale de Lausanne, Lausanne CH-1015, Switzerland
| | - Timur K. Kim
- Diamond
Light Source, Harwell
Science and Innovation Campus, Didcot OX11 0DE, U.K.
| |
Collapse
|
20
|
Luo C, Cao G, Wang B, Jiang L, Zhao H, Li T, Tai X, Lin Z, Lin Y, Sun Z, Cui P, Zhang H, Zhang Z, Zeng C. Self-assembly of 1T/1H superlattices in transition metal dichalcogenides. Nat Commun 2024; 15:10584. [PMID: 39632862 PMCID: PMC11618666 DOI: 10.1038/s41467-024-54948-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/24/2024] [Accepted: 11/26/2024] [Indexed: 12/07/2024] Open
Abstract
Heterostructures and superlattices composed of layered transition metal dichalcogenides (TMDs), celebrated for their superior emergent properties over individual components, offer significant promise for the development of multifunctional electronic devices. However, conventional fabrication techniques for these structures depend on layer-by-layer artificial construction and are hindered by their complexity and inefficiency. Herein, we introduce a universal strategy for the automated synthesis of TMD superlattice single crystals through self-assembly, exemplified by the NbSe2-xTex 1T/1H superlattice. The core principle of this strategy is to balance the formation energies of T (octahedral) and H (trigonal prismatic) phases. By adjusting the Te to Se stoichiometric ratio in NbSe2-xTex, we reduce the formation energy disparity between the T and H phases, enabling the self-assembly of 1T and 1H layers into a 1T/1H superlattice. The resulting 1T/1H superlattices retain electronic characteristics of both 1T and 1H layers. We further validate the universality of this strategy by achieving 1T/1H superlattices through substituting Nb atoms in NbSe2 with V or Ti atoms. This self-assembly for superlattice crystal synthesis approach could extend to other layered materials, opening new avenues for efficient fabrication and broad applications of superlattices.
Collapse
Affiliation(s)
- Chaojie Luo
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 23026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Guohua Cao
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 23026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Beilin Wang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 23026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Lili Jiang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 23026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Hengyi Zhao
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 23026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Tongrui Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China
| | - Xiaolin Tai
- Department of Chemistry, University of Science and Technology of China, Hefei, 230029, China
| | - Zhiyong Lin
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 23026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yue Lin
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 23026, China
| | - Zhe Sun
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 23026, China.
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Hui Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 23026, China.
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 23026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Changgan Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 23026, China.
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| |
Collapse
|
21
|
Qi S, Liu Y, Wang Z, Chen F, Li Q, Ji H, Li R, Li Y, Fang J, Liu H, Wang F, Jin K, Xie XC, Wang J. Quantum Griffiths Singularity in a Three-Dimensional Superconductor to Anderson Critical Insulator Transition. PHYSICAL REVIEW LETTERS 2024; 133:226001. [PMID: 39672146 DOI: 10.1103/physrevlett.133.226001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2024] [Revised: 09/15/2024] [Accepted: 10/17/2024] [Indexed: 12/15/2024]
Abstract
Disorder is ubiquitous in real materials and can have dramatic effects on quantum phase transitions. Originating from the disorder enhanced quantum fluctuation, quantum Griffiths singularity (QGS) has been revealed as a universal phenomenon in quantum criticality of low-dimensional superconductors. However, due to the weak fluctuation effect, QGS is very challenging to detect experimentally in three-dimensional (3D) superconducting systems. Here we report the discovery of QGS associated with the quantum phase transition from 3D superconductor to Anderson critical insulator in a spinel oxide MgTi_{2}O_{4} (MTO). Under both perpendicular and parallel magnetic field, the dynamical critical exponent diverges when approaching the quantum critical point, demonstrating the existence of 3D QGS. Among 3D superconductors, MTO shows a relatively strong fluctuation effect featured as a wide superconducting transition region. The enhanced fluctuation, which may arise from the mobility edge of Anderson localization, finally leads to the occurrence of 3D quantum phase transition and QGS. Our findings offer a new perspective to understand quantum phase transitions in strongly disordered 3D systems.
Collapse
Affiliation(s)
| | - Yi Liu
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | | | | | | | | | - Rao Li
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | | | | | | | | | - Kui Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - X C Xie
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Center for Theoretical Physics and Information Sciences, Fudan University, Shanghai 200433, China
- Hefei National Laboratory, Hefei 230088, China
| | | |
Collapse
|
22
|
Li Z, Jindal A, Strasser A, He Y, Zheng W, Graf D, Taniguchi T, Watanabe K, Balicas L, Dean CR, Qian X, Pasupathy AN, Rhodes DA. Twofold Anisotropic Superconductivity in Bilayer T_{d}-MoTe_{2}. PHYSICAL REVIEW LETTERS 2024; 133:216002. [PMID: 39642487 DOI: 10.1103/physrevlett.133.216002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2024] [Accepted: 09/10/2024] [Indexed: 12/09/2024]
Abstract
Noncentrosymmetric two-dimensional superconductors with large spin-orbit coupling offer an opportunity to explore superconducting behaviors far beyond the Pauli limit. One such superconductor, few-layer T_{d}-MoTe_{2}, has large upper critical fields that can exceed the Pauli limit by up to 600%. However, the mechanisms governing this enhancement are still under debate, with theory pointing toward either spin-orbit parity coupling or tilted Ising spin-orbit coupling. Moreover, ferroelectricity concomitant with superconductivity has been recently observed in the bilayer, where strong changes to superconductivity can be observed throughout the ferroelectric transition pathway. Here, we report the superconducting behavior of bilayer T_{d}-MoTe_{2} under an in-plane magnetic field, while systematically varying magnetic field angle and out-of-plane electric field strength. We find that superconductivity in bilayer MoTe_{2} exhibits a twofold symmetry with an upper critical field maxima occurring along the b axis and minima along the a axis. The twofold rotational symmetry remains robust throughout the entire superconducting region and ferroelectric hysteresis loop. Our experimental observations of the spin-orbit coupling strength (up to 16.4 meV) agree with the spin texture and spin splitting from first-principles calculations, indicating that tilted Ising spin-orbit coupling is the dominant underlying mechanism.
Collapse
|
23
|
Duprez H, Cances S, Omahen A, Masseroni M, Ruckriegel MJ, Adam C, Tong C, Garreis R, Gerber JD, Huang W, Gächter L, Watanabe K, Taniguchi T, Ihn T, Ensslin K. Spin-valley locked excited states spectroscoy in a one-particle bilayer graphene quantum dot. Nat Commun 2024; 15:9717. [PMID: 39521761 PMCID: PMC11550441 DOI: 10.1038/s41467-024-54121-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Accepted: 10/31/2024] [Indexed: 11/16/2024] Open
Abstract
Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust quantum number that can therefore be harnessed for this purpose. The simplest implementation of a valley qubit would rely on two states with opposite valleys as in the case of a single-carrier bilayer graphene quantum dot immersed in a small perpendicular magnetic field (B⊥ ≲ 100 mT). However, the single-carrier quantum dot excited states spectrum has not been resolved to date in the relevant magnetic field range. Here, we fill this gap, by measuring the parallel and perpendicular magnetic field dependence of this spectrum with an unprecedented resolution of 4 μeV. We use a time-resolved charge detection technique that gives us access to individual tunnel events. Our results come as a direct verification of the predicted spectrum and establish a new upper-bound on inter-valley mixing, equal to our energy resolution. Our charge detection technique opens the door to measuring the relaxation time of a valley qubit in a single-carrier bilayer graphene quantum dot.
Collapse
Affiliation(s)
- Hadrien Duprez
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland.
| | - Solenn Cances
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland
| | - Andraz Omahen
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland
| | - Michele Masseroni
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland
| | - Max J Ruckriegel
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland
| | - Christoph Adam
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland
| | - Chuyao Tong
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland
| | - Rebekka Garreis
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland
| | - Jonas D Gerber
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland
| | - Wister Huang
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland
| | - Lisa Gächter
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Namiki, 305-0044, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki, 305-0044, Tsukuba, Japan
| | - Thomas Ihn
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland
| | - Klaus Ensslin
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, ZH, Switzerland
| |
Collapse
|
24
|
Yu L, Mi M, Xiao H, Wang S, Sun Y, Lyu B, Bai L, Shen B, Liu M, Wang S, Wang Y. Intercalation-Induced Monolayer Behavior in Bulk NbSe 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:59049-59055. [PMID: 39418477 DOI: 10.1021/acsami.4c12617] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/19/2024]
Abstract
Superconductivity at the 2D limit is significant for advancing fundamental physics, leading to extensive research on monolayer two-dimensional materials. In particular, monolayer transition metal dichalcogenides such as NbSe2 exhibit Ising superconductivity due to broken in-plane inversion symmetry and strong spin-orbit coupling, which has garnered significant attention. In this letter, we adopted an organic cation intercalation technique to modulate the interlayer interaction of NbSe2 by expanding the interlayer distance, thereby making intercalated NbSe2 behave similarly to monolayer NbSe2. The interlayer distances of NbSe2 intercalated with THA+, CTA+, and TDA+ cations are almost double or triple that of pristine NbSe2. The superconducting transition temperature (Tc) of THA-NbSe2 is comparable to that of pristine NbSe2, while the charge density wave (CDW) transition temperature is higher. The Tc of intercalated NbSe2 decreases with a reduced hole concentration, and the enhanced CDW is ascribed to the dimensional reduction. Notably, the in-plane upper critical field of intercalated NbSe2 significantly exceeds the Pauli paramagnetic limit, which is similar to the Ising superconductivity observed in monolayer NbSe2. Our work demonstrates that the organic cations intercalated two-dimensional materials exhibit behavior similar to their monolayer counterparts, providing a convenient platform for exploring and modulating physical phenomena at the two-dimensional limit.
Collapse
Affiliation(s)
- Lixuan Yu
- School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Mengjuan Mi
- School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Han Xiao
- School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shilei Wang
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yitong Sun
- School of Physics, Shandong University, Jinan 250100, China
| | - Bingbing Lyu
- School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Lihui Bai
- School of Physics, Shandong University, Jinan 250100, China
| | - Bing Shen
- School of Physics, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Sun Yat-sen University, Guangzhou 510275, China
| | - Min Liu
- School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shanpeng Wang
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yilin Wang
- School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| |
Collapse
|
25
|
Septianto RD, Romagosa AP, Dong Y, Matsuoka H, Ideue T, Majima Y, Iwasa Y. Gate-Controlled Potassium Intercalation and Superconductivity in Molybdenum Disulfide. NANO LETTERS 2024; 24:13790-13795. [PMID: 39432260 DOI: 10.1021/acs.nanolett.4c04134] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/22/2024]
Abstract
Intercalation of guest ions into a van der Waals (vdW) gap in layered materials is a powerful route to create novel material phases and functionalities. Ionic gating is a technique to control the motions and configuration of ions for both intercalation and surface electrostatic doping. The advance of ionic gating enables the in situ probe of dynamics of ion diffusion, carrier doping, and transport properties. Here we performed in situ resistivity and Raman experiments on the potassium ion (K+) intercalation of single-crystal MoS2 and constructed a temperature-carrier density phase diagram. The K+-intercalation induces a structural transition from the prismatically coordinated phase to the octahedrally coordinated phase, where anisotropic three-dimensional superconductivity and a possible charge density wave state were observed. The present ionic gating offers a comprehensive view of the intercalated phases and proves that the electrostatically induced superconductivity is distinct from that in the intercalated phase.
Collapse
Affiliation(s)
- Ricky Dwi Septianto
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Alec Paul Romagosa
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Yu Dong
- Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656, Japan
| | - Hideki Matsuoka
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba Meguro-ku, Tokyo 153-8505, Japan
| | - Toshiya Ideue
- Institute for Solid State Physics, The University of Tokyo, Kashiwa 277-8581, Japan
| | - Yutaka Majima
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Yoshihiro Iwasa
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| |
Collapse
|
26
|
Shan M, Li S, Yang Y, Zhao D, Li J, Nie L, Wu Z, Zhou Y, Zheng L, Kang B, Wu T, Chen X. Anisotropic Spin Fluctuations Induced by Spin-Orbit Coupling in a Misfit Layer Compound (LaSe) 1.14(NbSe 2). ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403824. [PMID: 39206691 PMCID: PMC11515895 DOI: 10.1002/advs.202403824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Revised: 08/02/2024] [Indexed: 09/04/2024]
Abstract
Spin-orbit coupling (SOC) has significant effects on the superconductivity and magnetism of transition metal dichalcogenides (TMDs) at the 2D limit. Although 2D TMD samples possess many exotic properties different from those of bulk samples, experimental characterization in this field is still limited, especially for magnetism. Recent studies have revealed that bulk misfit layer compounds (MLCs) with (LaSe)1.14(NbSe2)n = 1,2 exhibit an Ising superconductivity similar to that of heavily electron-doped NbSe2 monolayers. This offers an opportunity to study the effect of SOC on the magnetism of 2D TMDs. Here, the possible SOC effect in (LaSe)1.14(NbSe2) is investigated by measuring nuclear magnetic resonance (NMR) and electrical transport. It is found that the LaSe layer not only functions as a charge reservoir for transferring electrons into the NbSe2 layer but also remarkably influences the local electronic environment around the 93Nb nuclei. More importantly, the significant SOC induces both a weak antilocalization (WAL) effect and anisotropic spin fluctuations in noncentrosymmetric NbSe2 layers. The present work contributes to a deep understanding of the role of the SOC effect in 2D TMDs and supports MCLs as an intriguing platform for exploring exotic physical properties within the 2D limit.
Collapse
Affiliation(s)
- Min Shan
- Hefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Shunjiao Li
- Hefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Ye Yang
- Hefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Dan Zhao
- Hefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Jian Li
- Hefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Linpeng Nie
- Hefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Zhimian Wu
- Hefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Yanbing Zhou
- Hefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Lixuan Zheng
- Hefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Baolei Kang
- Hefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiAnhui230026China
| | - Tao Wu
- Hefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiAnhui230026China
- CAS Key Laboratory of Strongly‐coupled Quantum Matter PhysicsDepartment of PhysicsUniversity of Science and Technology of ChinaHefeiAnhui230026China
- Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China
- Hefei National LaboratoryUniversity of Science and Technology of ChinaHefei230088China
| | - Xianhui Chen
- Hefei National Research Center for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiAnhui230026China
- CAS Key Laboratory of Strongly‐coupled Quantum Matter PhysicsDepartment of PhysicsUniversity of Science and Technology of ChinaHefeiAnhui230026China
- Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China
- Hefei National LaboratoryUniversity of Science and Technology of ChinaHefei230088China
| |
Collapse
|
27
|
Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
Collapse
Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| |
Collapse
|
28
|
Liu SB, Tian C, Fang Y, Rong H, Cao L, Wei X, Cui H, Chen M, Chen D, Song Y, Cui J, Li J, Guan S, Jia S, Chen C, He W, Huang F, Jiang Y, Mao J, Xie XC, Law KT, Chen JH. Nematic Ising superconductivity with hidden magnetism in few-layer 6R-TaS 2. Nat Commun 2024; 15:7569. [PMID: 39217153 PMCID: PMC11365993 DOI: 10.1038/s41467-024-51631-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Accepted: 08/14/2024] [Indexed: 09/04/2024] Open
Abstract
In van der Waals heterostructures (vdWHs), the manipulation of interlayer stacking/coupling allows for the construction of customizable quantum systems exhibiting exotic physics. An illustrative example is the diverse range of states of matter achieved through varying the proximity coupling between two-dimensional (2D) quantum spin liquid (QSL) and superconductors within the TaS2 family. This study presents a demonstration of the intertwined physics of spontaneous rotational symmetry breaking, hidden magnetism, and Ising superconductivity (SC) in the three-fold rotationally symmetric, non-magnetic natural vdWHs 6R-TaS2. A distinctive phase emerges in 6R-TaS2 below a characteristic temperature (T*) of approximately 30 K, which is characterized by a remarkable set of features, including a giant extrinsic anomalous Hall effect (AHE), Kondo screening, magnetic field-tunable thermal hysteresis, and nematic magneto-resistance. At lower temperatures, a coexistence of nematicity and Kondo screening with Ising superconductivity is observed, providing compelling evidence of hidden magnetism within a superconductor. This research not only sheds light on unexpected emergent physics resulting from the coupling of itinerant electrons and localized/correlated electrons in natural vdWHs but also emphasizes the potential for tailoring exotic quantum states through the manipulation of interlayer interactions.
Collapse
Affiliation(s)
- Shao-Bo Liu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Congkuan Tian
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
- Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Yuqiang Fang
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, China
| | - Hongtao Rong
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen, China
| | - Lu Cao
- College of Materials Science and Optoelectronic Technology, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Xinjian Wei
- Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Hang Cui
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Mantang Chen
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Di Chen
- Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Yuanjun Song
- Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Jian Cui
- Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Jiankun Li
- Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Shuyue Guan
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Shuang Jia
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Chaoyu Chen
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen, China
| | - Wenyu He
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Fuqiang Huang
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, China.
| | - Yuhang Jiang
- College of Materials Science and Optoelectronic Technology, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China.
| | - Jinhai Mao
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, China
| | - X C Xie
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China
- Hefei National Laboratory, Hefei, China
| | - Kam Tuen Law
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Jian-Hao Chen
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.
- Beijing Academy of Quantum Information Sciences, Beijing, China.
- Hefei National Laboratory, Hefei, China.
- Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing, China.
| |
Collapse
|
29
|
Lin T, Chen X, Xu R, Luo J, Zhu H. Ultrafast Polarization-Resolved Phonon Dynamics in Monolayer Semiconductors. NANO LETTERS 2024; 24:10592-10598. [PMID: 39137095 DOI: 10.1021/acs.nanolett.4c02787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
Monolayer transition metal dichalcogenide semiconductors exhibit unique valleytronic properties interacting strongly with chiral phonons that break time-reversal symmetry. Here, we observed the ultrafast dynamics of linearly and circularly polarized E'(Γ) phonons at the Brillouin zone center in single-crystalline monolayer WS2, excited by intense, resonant, and polarization-tunable terahertz pulses and probed by time-resolved anti-Stokes Raman spectroscopy. We separated the coherent phonons producing directional sum-frequency generation from the incoherent phonon population emitting scattered photons. The longer incoherent population lifetime than what was expected from coherence lifetime indicates that inhomogeneous broadening and momentum scattering play important roles in phonon decoherence at room temperature. Meanwhile, the faster depolarization rate in circular bases than in linear bases suggests that the eigenstates are linearly polarized due to lattice anisotropy. Our results provide crucial information for improving the lifetime of chiral phonons in two-dimensional materials and potentially facilitate dynamic control of spin-orbital polarizations in quantum materials.
Collapse
Affiliation(s)
- Tong Lin
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Xiaotong Chen
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Rui Xu
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Jiaming Luo
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Hanyu Zhu
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| |
Collapse
|
30
|
Ding C, Lu Q, Shao D, Zhang Z, Han Y, Wang J, Sun J. Two-Dimensional M-Chalcogene Family with Tunable Superconducting, Topological, and Magnetic Properties. NANO LETTERS 2024; 24:9953-9960. [PMID: 39102284 DOI: 10.1021/acs.nanolett.4c02508] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/06/2024]
Abstract
An interesting question is whether chalcogen atoms can emulate the role of carbon or boron elements stabilized between two transition metal layers, as observed in MXenes or MBenes. Here, we predict a new family of two-dimensional ternary compounds M4XY2 (where M = Pd, Y, Zr, etc.; X = S, Se, Te; and Y = Cl, Br, I), named M-chalcogene. Through first-principles calculations, we reveal diverse physical properties in these compounds, including superconducting, topological, and magnetic characteristics, where the bilayer transition metals play crucial roles. Moreover, the expected helical edge states and superconducting transition temperatures in Pd4SCl2 can be finely tuned by strains. Additionally, the Ti4SCl2 is predicted to be a topological insulator and shows promise as a gas sensor candidate for certain exotic gases. Our findings expand two-dimensional material families and provide promising platforms for diverse physical phenomena with efficient tunability by external stimuli for various applications.
Collapse
Affiliation(s)
- Chi Ding
- National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Qing Lu
- National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Dexi Shao
- School of Physics, Hangzhou Normal University, Hangzhou 311121, China
| | - Zhongwei Zhang
- National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yu Han
- National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Junjie Wang
- National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jian Sun
- National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| |
Collapse
|
31
|
Zhang J, Shen S, Puggioni D, Wang M, Sha H, Xu X, Lyu Y, Peng H, Xing W, Walters LN, Liu L, Wang Y, Hou D, Xi C, Pi L, Ishizuka H, Kotani Y, Kimata M, Nojiri H, Nakamura T, Liang T, Yi D, Nan T, Zang J, Sheng Z, He Q, Zhou S, Nagaosa N, Nan CW, Tokura Y, Yu R, Rondinelli JM, Yu P. A correlated ferromagnetic polar metal by design. NATURE MATERIALS 2024; 23:912-919. [PMID: 38605196 DOI: 10.1038/s41563-024-01856-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Accepted: 03/11/2024] [Indexed: 04/13/2024]
Abstract
Polar metals have recently garnered increasing interest because of their promising functionalities. Here we report the experimental realization of an intrinsic coexisting ferromagnetism, polar distortion and metallicity in quasi-two-dimensional Ca3Co3O8. This material crystallizes with alternating stacking of oxygen tetrahedral CoO4 monolayers and octahedral CoO6 bilayers. The ferromagnetic metallic state is confined within the quasi-two-dimensional CoO6 layers, and the broken inversion symmetry arises simultaneously from the Co displacements. The breaking of both spatial-inversion and time-reversal symmetries, along with their strong coupling, gives rise to an intrinsic magnetochiral anisotropy with exotic magnetic field-free non-reciprocal electrical resistivity. An extraordinarily robust topological Hall effect persists over a broad temperature-magnetic field phase space, arising from dipole-induced Rashba spin-orbit coupling. Our work not only provides a rich platform to explore the coupling between polarity and magnetism in a metallic system, with extensive potential applications, but also defines a novel design strategy to access exotic correlated electronic states.
Collapse
Affiliation(s)
- Jianbing Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Shengchun Shen
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Danilo Puggioni
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Meng Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Haozhi Sha
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, China
| | - Xueli Xu
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Yingjie Lyu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Huining Peng
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Wandong Xing
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, China
| | - Lauren N Walters
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Linhan Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, China
| | - Yujia Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - De Hou
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Chuanying Xi
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Li Pi
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Hiroaki Ishizuka
- Department of Physics, Tokyo Institute of Technology, Tokyo, Japan
| | - Yoshinori Kotani
- Center for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute, Hyogo, Japan
| | - Motoi Kimata
- Institute of Materials Research, Tohoku University, Sendai, Japan
| | - Hiroyuki Nojiri
- Institute of Materials Research, Tohoku University, Sendai, Japan
| | - Tetsuya Nakamura
- International Center for Synchrotron Radiation Innovation Smart, Tohoku University, Sendai, Japan
| | - Tian Liang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Frontier Science Center for Quantum Information, Beijing, China
| | - Di Yi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Tianxiang Nan
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, China
| | - Jiadong Zang
- Department of Physics and Astronomy, University of New Hampshire, Durham, NH, USA
| | - Zhigao Sheng
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Qing He
- Department of Physics, Durham University, Durham, UK
| | - Shuyun Zhou
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
- Frontier Science Center for Quantum Information, Beijing, China
| | - Naoto Nagaosa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Department of Applied Physics, University of Tokyo, Tokyo, Japan
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Yoshinori Tokura
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Department of Applied Physics, University of Tokyo, Tokyo, Japan
| | - Rong Yu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China.
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, China.
| | - James M Rondinelli
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China.
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
- Frontier Science Center for Quantum Information, Beijing, China.
| |
Collapse
|
32
|
Li C, Xu F, Li B, Li J, Li G, Watanabe K, Taniguchi T, Tong B, Shen J, Lu L, Jia J, Wu F, Liu X, Li T. Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene. Nature 2024; 631:300-306. [PMID: 38898282 DOI: 10.1038/s41586-024-07584-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Accepted: 05/17/2024] [Indexed: 06/21/2024]
Abstract
Graphene-based, high-quality, two-dimensional electronic systems have emerged as a highly tunable platform for studying superconductivity1-21. Specifically, superconductivity has been observed in both electron- and hole-doped twisted graphene moiré systems1-17, whereas in crystalline graphene systems, superconductivity has so far been observed only in hole-doped rhombohedral trilayer graphene (RTG)18 and hole-doped Bernal bilayer graphene (BBG)19-21. Recently, enhanced superconductivity has been demonstrated20,21 in BBG because of the proximity to a monolayer WSe2. Here we report the observation of superconductivity and a series of flavour-symmetry-breaking phases in electron- and hole-doped BBG/WSe2 devices by electrostatic doping. The strength of the observed superconductivity is tunable by applied vertical electric fields. The maximum Berezinskii-Kosterlitz-Thouless transition temperature for the electron- and hole-doped superconductivity is about 210 mK and 400 mK, respectively. Superconductivities emerge only when the applied electric fields drive the BBG electron or hole wavefunctions towards the WSe2 layer, underscoring the importance of the WSe2 layer in the observed superconductivity. The hole-doped superconductivity violates the Pauli paramagnetic limit, consistent with an Ising-like superconductor. By contrast, the electron-doped superconductivity obeys the Pauli limit, although the proximity-induced Ising spin-orbit coupling is also notable in the conduction band. Our findings highlight the rich physics associated with the conduction band in BBG, paving the way for further studies into the superconducting mechanisms of crystalline graphene and the development of superconductor devices based on BBG.
Collapse
Affiliation(s)
- Chushan Li
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, China
| | - Fan Xu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Bohao Li
- School of Physics and Technology, Wuhan University, Wuhan, China
| | - Jiayi Li
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Guoan Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Bingbing Tong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Jie Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Li Lu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Hefei National Laboratory, Hefei, China
| | - Jinfeng Jia
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, China
- Hefei National Laboratory, Hefei, China
- Shanghai Research Center for Quantum Sciences, Shanghai, China
| | - Fengcheng Wu
- School of Physics and Technology, Wuhan University, Wuhan, China.
- Wuhan Institute of Quantum Technology, Wuhan, China.
| | - Xiaoxue Liu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China.
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, China.
- Hefei National Laboratory, Hefei, China.
- Shanghai Research Center for Quantum Sciences, Shanghai, China.
| | - Tingxin Li
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China.
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, China.
- Hefei National Laboratory, Hefei, China.
| |
Collapse
|
33
|
Ning Z, Qian J, Liu Y, Chen F, Zhang M, Deng L, Yuan X, Ge Q, Jin H, Zhang G, Peng W, Qiao S, Mu G, Chen Y, Li W. Coexistence of Ferromagnetism and Superconductivity at KTaO 3 Heterointerfaces. NANO LETTERS 2024; 24:7134-7141. [PMID: 38828962 DOI: 10.1021/acs.nanolett.4c02500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2024]
Abstract
The coexistence of superconductivity and ferromagnetism is a long-standing issue in superconductivity due to the antagonistic nature of these two ordered states. Experimentally identifying and characterizing novel heterointerface superconductors that coexist with magnetism presents significant challenges. Here, we report the observation of two-dimensional long-range ferromagnetic order in a KTaO3 heterointerface superconductor, showing the coexistence of superconductivity and ferromagnetism. Remarkably, our direct current superconducting quantum interference device measurements reveal an in-plane magnetization hysteresis loop persisting above room temperature. Moreover, first-principles calculations and X-ray magnetic circular dichroism measurements provide decisive insights into the origin of the observed robust ferromagnetism, attributing it to oxygen vacancies that localize electrons in nearby Ta 5d states. Our findings suggest KTaO3 heterointerfaces as time-reversal symmetry breaking superconductors, injecting fresh momentum into the exploration of the intricate interplay between superconductivity and magnetism enhanced by the strong spin-orbit coupling inherent to the heavy Ta in 5d orbitals.
Collapse
Affiliation(s)
- Zhongfeng Ning
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jiahui Qian
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yixin Liu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fan Chen
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mingzhu Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liwei Deng
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinli Yuan
- Thermo Fisher Scientific China, Shanghai 201203, China
| | - Qingqin Ge
- Thermo Fisher Scientific China, Shanghai 201203, China
| | - Hua Jin
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Guanqun Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wei Peng
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Qiao
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Gang Mu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yan Chen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wei Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| |
Collapse
|
34
|
Liu J, Wang H, Shi X, Zhang X. Prediction of superconductivity in a series of tetragonal transition metal dichalcogenides. MATERIALS HORIZONS 2024; 11:2694-2700. [PMID: 38501208 DOI: 10.1039/d4mh00141a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
Transition metal dichalcogenides (TMDCs) represent a well-known material family with diverse structural phases and rich electronic properties; they are thus an ideal platform for studying the emergence and exotic phenomenon of superconductivity (SC). Herein, we propose the existence of tetragonal TMDCs with a distorted Lieb (dLieb) lattice structure and the stabilized transition metal disulfides (MS2), including dLieb-ZrS2, dLieb-NbS2, dLieb-MnS2, dLieb-FeS2, dLieb-ReS2, and dLieb-OsS2. Except for semiconducting dLieb-ZrS2 and magnetic dLieb-MnS2, the rest of metallic dLieb-MS2 was found to exhibit intrinsic SC with the transition temperature (TC) ranging from ∼5.4 to ∼13.0 K. The TC of dLieb-ReS2 and dLieb-OsS2 exceeded 10 K and was higher than that of the intrinsic SC in the known metallic TMDCs, which is attributed to the significant phonon-softening enhanced electron-phonon coupling strength. Different from the Ising spin-orbit coupling (SOC) effect in existing non-centrosymmetric TMDCs, the non-magnetic dLieb-MS2 monolayers exhibit the Dresselhaus SOC effect, which is featured by in-plane spin orientations and will give rise to the topological SC under proper conditions. In addition to enriching the structural phases of TMDCs, our work predicts a series of SC candidates with high intrinsic TC and topological non-triviality used for fault-tolerant quantum computation.
Collapse
Affiliation(s)
- Jiale Liu
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
| | - Huidong Wang
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
| | - Xiaojun Shi
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
| | - Xiaoming Zhang
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
| |
Collapse
|
35
|
Li Z, Lyu P, Chen Z, Guan D, Yu S, Zhao J, Huang P, Zhou X, Qiu Z, Fang H, Hashimoto M, Lu D, Song F, Loh KP, Zheng Y, Shen ZX, Novoselov KS, Lu J. Beyond Conventional Charge Density Wave for Strongly Enhanced 2D Superconductivity in 1H-TaS 2 Superlattices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312341. [PMID: 38567889 DOI: 10.1002/adma.202312341] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2023] [Revised: 03/26/2024] [Indexed: 04/12/2024]
Abstract
Noncentrosymmetric transition metal dichalcogenide (TMD) monolayers offer a fertile platform for exploring unconventional Ising superconductivity (SC) and charge density waves (CDWs). However, the vulnerability of isolated monolayers to structural disorder and environmental oxidation often degrade their electronic coherence. Herein, an alternative approach is reported for fabricating stable and intrinsic monolayers of 1H-TaS2 sandwiched between SnS blocks in a (SnS)1.15TaS2 van der Waals (vdW) superlattice. The SnS block layers not only decouple individual 1H-TaS2 sublayers to endow them with monolayer-like electronic characteristics, but also protect the 1H-TaS2 layers from electronic degradation. The results reveal the characteristic 3 × 3 CDW order in 1H-TaS2 sublayers associated with electronic rearrangement in the low-lying sulfur p band, which uncovers a previously undiscovered CDW mechanism rather than the conventional Fermi surface-related framework. Additionally, the (SnS)1.15TaS2 superlattice exhibits a strongly enhanced Ising-like SC with a layer-independent Tc of ≈3.0 K, comparable to that of the isolated monolayer 1H-TaS2 sample, presumably attributed to their monolayer-like characteristics and retained Fermi states. These results provide new insights into the long-debated CDW order and enhanced SC of monolayer 1H-TaS2, establishing bulk vdW superlattices as promising platforms for investigating exotic collective quantum phases in the 2D limit.
Collapse
Affiliation(s)
- Zejun Li
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
- Purple Mountain Laboratories, Nanjing, 211111, China
| | - Pin Lyu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Zhaolong Chen
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen, 518055, China
| | - Dandan Guan
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), TD Lee Institute, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Shuang Yu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China
| | - Jinpei Zhao
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - Pengru Huang
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
- Guangxi Key Laboratory of Information Materials, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, China
| | - Xin Zhou
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Zhizhan Qiu
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - Hanyan Fang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Makoto Hashimoto
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Donghui Lu
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Fei Song
- Shanghai Synchrotron Radiation Faciality, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201204, China
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Yi Zheng
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China
| | - Zhi-Xun Shen
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Geballe Laboratory for Advanced Materials, Department of Physics and Applied Physics, Stanford University, Stanford, CA, 94305, USA
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - Jiong Lu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| |
Collapse
|
36
|
Reinhardt S, Ascherl T, Costa A, Berger J, Gronin S, Gardner GC, Lindemann T, Manfra MJ, Fabian J, Kochan D, Strunk C, Paradiso N. Link between supercurrent diode and anomalous Josephson effect revealed by gate-controlled interferometry. Nat Commun 2024; 15:4413. [PMID: 38782910 PMCID: PMC11116472 DOI: 10.1038/s41467-024-48741-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Accepted: 05/07/2024] [Indexed: 05/25/2024] Open
Abstract
In Josephson diodes the asymmetry between positive and negative current branch of the current-phase relation leads to a polarity-dependent critical current and Josephson inductance. The supercurrent nonreciprocity can be described as a consequence of the anomalous Josephson effect -a φ0-shift of the current-phase relation- in multichannel ballistic junctions with strong spin-orbit interaction. In this work, we simultaneously investigate φ0-shift and supercurrent diode efficiency on the same Josephson junction by means of a superconducting quantum interferometer. By electrostatic gating, we reveal a direct link between φ0-shift and diode effect. Our findings show that spin-orbit interaction in combination with a Zeeman field plays an important role in determining the magnetochiral anisotropy and the supercurrent diode effect.
Collapse
Affiliation(s)
- S Reinhardt
- Institut für Experimentelle und Angewandte Physik, University of Regensburg, Regensburg, Germany
| | - T Ascherl
- Institut für Experimentelle und Angewandte Physik, University of Regensburg, Regensburg, Germany
| | - A Costa
- Institut für Theoretische Physik, University of Regensburg, Regensburg, Germany
| | - J Berger
- Institut für Experimentelle und Angewandte Physik, University of Regensburg, Regensburg, Germany
| | - S Gronin
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - G C Gardner
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - T Lindemann
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - M J Manfra
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
- School of Materials Engineering, Purdue University, West Lafayette, IN, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
| | - J Fabian
- Institut für Theoretische Physik, University of Regensburg, Regensburg, Germany
| | - D Kochan
- Institut für Theoretische Physik, University of Regensburg, Regensburg, Germany
- Institute of Physics, Slovak Academy of Sciences, Bratislava, Slovakia
- Center for Quantum Frontiers of Research and Technology (QFort), National Cheng Kung University, Tainan, Taiwan
| | - C Strunk
- Institut für Experimentelle und Angewandte Physik, University of Regensburg, Regensburg, Germany
| | - N Paradiso
- Institut für Experimentelle und Angewandte Physik, University of Regensburg, Regensburg, Germany.
| |
Collapse
|
37
|
Aggarwal R, Saini D, Mitra R, Sonkar SK, Sonker AK, Westman G. From Bulk Molybdenum Disulfide (MoS 2) to Suspensions of Exfoliated MoS 2 in an Aqueous Medium and Their Applications. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:9855-9872. [PMID: 38687994 DOI: 10.1021/acs.langmuir.3c03116] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Two-dimensional (2D) layered materials like graphene, transition-metal dichalcogenides (TMDs), boron nitrides, etc., exhibit unique and fascinating properties, such as high surface-to-volume ratio, inherent mechanical flexibility and robustness, tunable bandgap, and high carrier mobility, which makes them an apt candidate for flexible electronics with low consumption of power. Because of these properties, they are in tremendous demand for advancement in energy, environmental, and biomedical sectors developed through various technologies. The production and scalability of these materials must be sustainable and ecofriendly to utilize these unique properties in the real world. Here, in this current review, we review molybdenum disulfide (MoS2 nanosheets) in detail, focusing on exfoliated MoS2 in water and the applicability of aqueous MoS2 suspensions in various fields. The exfoliation of MoS2 results in the formation of single or few-layered MoS2. Therefore, this Review focuses on the few layers of exfoliated MoS2 that have the additional properties of 2D layered materials and higher excellent compatibility for integration than existing conventional Si tools. Hence, a few layers of exfoliated MoS2 are widely explored in biosensing, gas sensing, catalysis, photodetectors, energy storage devices, a light-emitting diode (LED), adsorption, etc. This review covers the numerous methodologies to exfoliate MoS2, focusing on the various published methodologies to obtain nanosheets of MoS2 from water solutions and their use.
Collapse
Affiliation(s)
- Ruchi Aggarwal
- Department of Chemistry, Malaviya National Institute of Technology, Jaipur 302017, India
| | - Deepika Saini
- Department of Chemistry, Malaviya National Institute of Technology, Jaipur 302017, India
| | - Richa Mitra
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
- Low Temperature Laboratory, Department of Applied Physics, Aalto University, Espoo 02150, Finland
| | - Sumit Kumar Sonkar
- Department of Chemistry, Malaviya National Institute of Technology, Jaipur 302017, India
| | - Amit Kumar Sonker
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Gothenburg, 41296, Sweden
- Wallenberg Wood Science Centre (WWSC), Chalmers University of Technology, Gothenburg, 41296, Sweden
- BA5409 cellulose films and coatings, VTT Technical Research Center of Finland, Tietotie 4E, Espoo 02150, Finland
| | - Gunnar Westman
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Gothenburg, 41296, Sweden
- Wallenberg Wood Science Centre (WWSC), Chalmers University of Technology, Gothenburg, 41296, Sweden
| |
Collapse
|
38
|
Wang S, Yu Y, Hao J, Liang K, Xiang B, Zhu J, Lin Y, Pan Y, Gu G, Watanabe K, Taniguchi T, Qi Y, Zhang Y, Wang Y. Oscillating paramagnetic Meissner effect and Berezinskii-Kosterlitz-Thouless transition in underdoped Bi 2Sr 2CaCu 2O 8+δ. Natl Sci Rev 2024; 11:nwad249. [PMID: 38577674 PMCID: PMC10989300 DOI: 10.1093/nsr/nwad249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Revised: 07/01/2023] [Accepted: 08/31/2023] [Indexed: 04/06/2024] Open
Abstract
Superconducting phase transitions in two dimensions lie beyond the description of the Ginzburg-Landau symmetry-breaking paradigm for three-dimensional superconductors. They are Berezinskii-Kosterlitz-Thouless (BKT) transitions of paired-electron condensate driven by the unbinding of topological excitations, i.e. vortices. The recently discovered monolayers of layered high-transition-temperature ([Formula: see text]) cuprate superconductor Bi2Sr2CaCu2O8+δ (Bi2212) meant that this 2D superconductor promised to be ideal for the study of unconventional superconductivity. But inhomogeneity posed challenges for distinguishing BKT physics from charge correlations in this material. Here, we utilize the phase sensitivity of scanning superconducting quantum interference device microscopy susceptometry to image the local magnetic response of underdoped Bi2212 from the monolayer to the bulk throughout its phase transition. The monolayer segregates into domains with independent phases at elevated temperatures below [Formula: see text]. Within a single domain, we find that the susceptibility oscillates with flux between diamagnetism and paramagnetism in a Fraunhofer-like pattern up to [Formula: see text]. The finite modulation period, as well as the broadening of the peaks when approaching [Formula: see text] from below, suggests well-defined vortices that are increasingly screened by the dissociation of vortex-antivortex plasma through a BKT transition. In the multilayers, the susceptibility oscillation differs in a small temperature regime below [Formula: see text], consistent with a dimensional crossover led by interlayer coupling. Serving as strong evidence for BKT transition in the bulk, we observe a sharp jump in phase stiffness and paramagnetism at small fields just below [Formula: see text]. These results unify the superconducting phase transitions from the monolayer to the bulk underdoped Bi2212, and can be collectively referred to as the BKT transition with interlayer coupling.
Collapse
Affiliation(s)
- Shiyuan Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yijun Yu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jinxiang Hao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Keyi Liang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Bingke Xiang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jinjiang Zhu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yishi Lin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yinping Pan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Genda Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Yang Qi
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuanbo Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
| | - Yihua Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
| |
Collapse
|
39
|
Zhai W, Li Z, Wang Y, Zhai L, Yao Y, Li S, Wang L, Yang H, Chi B, Liang J, Shi Z, Ge Y, Lai Z, Yun Q, Zhang A, Wu Z, He Q, Chen B, Huang Z, Zhang H. Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides. Chem Rev 2024; 124:4479-4539. [PMID: 38552165 DOI: 10.1021/acs.chemrev.3c00931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.
Collapse
Affiliation(s)
- Wei Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yongji Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Li Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Lixin Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Hua Yang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Banlan Chi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Jinzhe Liang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yiyao Ge
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhuangchai Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Qinbai Yun
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - An Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhiying Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Bo Chen
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhiqi Huang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
| |
Collapse
|
40
|
Le T, Zhang R, Li C, Jiang R, Sheng H, Tu L, Cao X, Lyu Z, Shen J, Liu G, Liu F, Wang Z, Lu L, Qu F. Magnetic field filtering of the boundary supercurrent in unconventional metal NiTe 2-based Josephson junctions. Nat Commun 2024; 15:2785. [PMID: 38555347 PMCID: PMC10981750 DOI: 10.1038/s41467-024-47103-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Accepted: 03/15/2024] [Indexed: 04/02/2024] Open
Abstract
Topological materials with boundary (surface/edge/hinge) states have attracted tremendous research interest. Additionally, unconventional (obstructed atomic) materials have recently drawn lots of attention owing to their obstructed boundary states. Experimentally, Josephson junctions (JJs) constructed on materials with boundary states produce the peculiar boundary supercurrent, which was utilized as a powerful diagnostic approach. Here, we report the observations of boundary supercurrent in NiTe2-based JJs. Particularly, applying an in-plane magnetic field along the Josephson current can rapidly suppress the bulk supercurrent and retain the nearly pure boundary supercurrent, namely the magnetic field filtering of supercurrent. Further systematic comparative analysis and theoretical calculations demonstrate the existence of unconventional nature and obstructed hinge states in NiTe2, which could produce hinge supercurrent that accounts for the observation. Our results reveal the probable hinge states in unconventional metal NiTe2, and demonstrate in-plane magnetic field as an efficient method to filter out the bulk contributions and thereby to highlight the hinge states hidden in topological/unconventional materials.
Collapse
Affiliation(s)
- Tian Le
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Ruihan Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Ruiyang Jiang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Haohao Sheng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Linfeng Tu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physics, Nankai University, Tianjin, China
| | - Xuewei Cao
- School of Physics, Nankai University, Tianjin, China
| | - Zhaozheng Lyu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Hefei National Laboratory, Hefei, China
| | - Jie Shen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, China
| | - Guangtong Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Hefei National Laboratory, Hefei, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, China.
| | - Zhijun Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
| | - Li Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
- Hefei National Laboratory, Hefei, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.
| | - Fanming Qu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
- Hefei National Laboratory, Hefei, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.
| |
Collapse
|
41
|
Li X, Zhang S, Zhang X, Vardeny ZV, Liu F. Topological Nodal-Point Superconductivity in Two-Dimensional Ferroelectric Hybrid Perovskites. NANO LETTERS 2024; 24:2705-2711. [PMID: 38240732 DOI: 10.1021/acs.nanolett.3c04085] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Two-dimensional (2D) hybrid organic-inorganic perovskites (HOIPs) with enhanced stability, high tunability, and strong spin-orbit coupling have shown great potential in vast applications. Here, we extend the already rich functionality of 2D HOIPs to a new territory, realizing topological superconductivity and Majorana modes for fault-tolerant quantum computation. Especially, we predict that room-temperature ferroelectric BA2PbCl4 (BA for benzylammonium) exhibits topological nodal-point superconductivity (NSC) and gapless Majorana modes on selected edges and ferroelectric domain walls when proximity-coupled to an s-wave superconductor and an in-plane Zeeman field, attractive for experimental verification and application. Since NSC is protected by spatial symmetry of 2D HOIPs, we envision more exotic topological superconducting states to be found in this class of materials due to their diverse noncentrosymmetric space groups, which may open a new avenue in the fields of HOIPs and topological superconductivity.
Collapse
Affiliation(s)
- Xiaoyin Li
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
| | - Shunhong Zhang
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xiaoming Zhang
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, People's Republic of China
| | - Zeev Valy Vardeny
- Department of Physics & Astronomy, University of Utah, Salt Lake City, Utah 84112, United States
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
| |
Collapse
|
42
|
Liu M, Gou J, Liu Z, Chen Z, Ye Y, Xu J, Xu X, Zhong D, Eda G, Wee ATS. Phase-selective in-plane heteroepitaxial growth of H-phase CrSe 2. Nat Commun 2024; 15:1765. [PMID: 38409207 PMCID: PMC10897461 DOI: 10.1038/s41467-024-46087-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Accepted: 02/14/2024] [Indexed: 02/28/2024] Open
Abstract
Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe2. The lattice-matched MoSe2 nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe2 with the formation of MoSe2-CrSe2 heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe2 monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe2 exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.
Collapse
Affiliation(s)
- Meizhuang Liu
- School of Physics, Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006, China.
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore.
| | - Jian Gou
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore
- School of Physics, Zhejiang University, Hangzhou, 310027, China
| | - Zizhao Liu
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
| | - Zuxin Chen
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, China
| | - Yuliang Ye
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, China
| | - Jing Xu
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, China
| | - Xiaozhi Xu
- School of Physics, Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006, China
| | - Dingyong Zhong
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
| | - Goki Eda
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore.
| |
Collapse
|
43
|
Li X, Li Z, Han J, Cao S, Zhang Z. Single-layer PtSe 2 adsorbed with non-metallic atoms: geometrical, mechanical, electronic and optical properties and strain effects. Phys Chem Chem Phys 2024; 26:4218-4230. [PMID: 38230672 DOI: 10.1039/d3cp05037h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Recently, single-layer PtSe2, possessing high carrier mobility and optical response, has been successfully fabricated. To further expand its application scope and find new physics, in this work, we functionalized it via the adsorption of non-metallic atoms X (X = H, B, C, N, O, and F) to form hybrid systems X-PtSe2, and their geometrical, mechanical, electronic, and optical properties as well as strain tuning effects were studied deeply. Calculations show that the energy stability of X-PtSe2 systems is significantly enhanced, and they also hold higher thermal and mechanical stability. Particularly, X-PtSe2 systems present excellent in-plane tenacity and out-of plane stiffness against deformations, which make them more applicable for designing nanodevices. Intrinsic PtSe2 is a semiconductor, while the X-PtSe2 system can be a band-gap narrowed semiconductor or metal, thus expanding the application scope for PtSe2, and the odd-even effect of electronic phase variation related to the atomic number is found. Besides, the wavelength range of optical adsorption is increased in X-PtSe2 systems, implying that its optical response region is wide, providing more options for developing optoelectronic devices. Moreover, it is shown that strain can flexibly tune the electronic property of X-PtSe2 systems, especially enhancing the optical absorption ability substantially, beneficial for their applications in solar devices.
Collapse
Affiliation(s)
- Xinyan Li
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Zhanhai Li
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Jianing Han
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Shengguo Cao
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Zhenhua Zhang
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| |
Collapse
|
44
|
Xu X, Zhang C, Yin J, Smajic J, Bahabri M, Lei Y, Hedhili MN, Hota MK, Shi L, Guo T, Zheng D, El-Demellawi JK, Lanza M, Costa PMFJ, Bakr OM, Mohammed OF, Zhang X, Alshareef HN. Anisotropic Superconducting Nb 2 CT x MXene Processed by Atomic Exchange at the Wafer Scale. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305326. [PMID: 37907810 DOI: 10.1002/adma.202305326] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/04/2023] [Revised: 10/17/2023] [Indexed: 11/02/2023]
Abstract
Superconductivty has recently been induced in MXenes through surface modification. However, the previous reports have mostly been based on powders or cold-pressed pellets, with no known reports on the intrinsic superconsucting properties of MXenes at the nanoale. Here, it is developed a high-temperature atomic exchange process in NH3 atmosphere which induces superconductivity in either singleflakes or thin films of Nb2 CTx MXene. The exchange process between nitrogen atoms and fluorine, carbon, and oxygen atoms in the MXene lattice and related structural adjustments are studied using both experiments and density functional theory. Using either single-flake or thin-film devices, an anisotropic magnetic response of the 2D superconducting transformation has been successfully revealed. The anisotropic superconductivity is further demonstrated using superconducting thin films uniformly deposited over a 4 in. wafers, which opens up the possibility of scalable MXene-based superconducting devices.
Collapse
Affiliation(s)
- Xiangming Xu
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Chenghui Zhang
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jun Yin
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077, Hong Kong
| | - Jasmin Smajic
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mohammed Bahabri
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yongjiu Lei
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mohamed Nejib Hedhili
- Core Laboratories, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mrinal K Hota
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Lin Shi
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tianchao Guo
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jehad K El-Demellawi
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- KAUST Upstream Research Center (KURC), EXPEC-ARC, Saudi Aramco, Thuwal, 23955, Saudi Arabia
| | - Mario Lanza
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Pedro M F J Costa
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Osman M Bakr
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Omar F Mohammed
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Advanced Membranes and Porous Materials (AMPM) Center and KAUST Catalysis Center, PSE Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| |
Collapse
|
45
|
Li W, Yang DJ, Lu WT. Enhancement and switch effect of equal-spin Andreev reflection in ferromagnet/insulator/Ising superconductor junctions. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:135302. [PMID: 38091610 DOI: 10.1088/1361-648x/ad154d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Accepted: 12/13/2023] [Indexed: 12/29/2023]
Abstract
We study the property of equal-spin Andreev reflection (ESAR) in the ferromagnet/insulator/Ising superconductor junction where Ising spin-orbit coupling is taken into account in the insulator. It is found that the ESAR exhibits a regular oscillation with the insulating barrier, the amplitude and period of which can be effectively controlled by the chemical potentials. Compared to that in the ferromagnet/Ising superconductor junction, the ESAR is greatly increased due to the resonant mode, suggesting an enhanced spin-triplet pairing. As an application, the proposed junction may work as a switch to turn on and off the ESAR. Furthermore, the insulating barrier does not change the magnetoanisotropic period of ESAR because of the invariant symmetry of the system, however, the magnetoanisotropy is strengthened.
Collapse
Affiliation(s)
- Wen Li
- School of Information Science and Technology, Nantong University, Nantong 226019, People's Republic of China
| | - De-Jing Yang
- College of Physics, Sichuan University, Chengdu 610064, People's Republic of China
| | - Wei-Tao Lu
- School of Sciences, Nantong University, Nantong 226019, People's Republic of China
| |
Collapse
|
46
|
Zhu S, Wu J, Zhu P, Pei C, Wang Q, Jia D, Wang X, Zhao Y, Gao L, Li C, Cao W, Zhang M, Zhang L, Li M, Gou H, Yang W, Sun J, Chen Y, Wang Z, Yao Y, Qi Y. Pressure-Induced Superconductivity and Topological Quantum Phase Transitions in the Topological Semimetal ZrTe 2. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2301332. [PMID: 37944509 PMCID: PMC10724415 DOI: 10.1002/advs.202301332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 09/04/2023] [Indexed: 11/12/2023]
Abstract
Topological transition metal dichalcogenides (TMDCs) have attracted much attention due to their potential applications in spintronics and quantum computations. In this work, the structural and electronic properties of topological TMDCs candidate ZrTe2 are systematically investigated under high pressure. A pressure-induced Lifshitz transition is evidenced by the change of charge carrier type as well as the Fermi surface. Superconductivity is observed at around 8.3 GPa without structural phase transition. A typical dome-shape phase diagram is obtained with the maximum Tc of 5.6 K for ZrTe2 . Furthermore, the theoretical calculations suggest the presence of multiple pressure-induced topological quantum phase transitions, which coexists with emergence of superconductivity. The results demonstrate that ZrTe2 with nontrivial topology of electronic states displays new ground states upon compression.
Collapse
Affiliation(s)
- Shihao Zhu
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Juefei Wu
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Peng Zhu
- Centre for Quantum PhysicsKey Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE)School of PhysicsBeijing Institute of TechnologyBeijing100081China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic SystemsBeijing Institute of TechnologyBeijing100081China
- Material Science CenterYangtze Delta Region Academy of Beijing Institute of TechnologyJiaxing314011China
| | - Cuiying Pei
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Qi Wang
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
- ShanghaiTech Laboratory for Topological PhysicsShanghaiTech UniversityShanghai201210China
| | - Donghan Jia
- Center for High Pressure Science and Technology Advanced ResearchShanghai201203China
| | - Xinyu Wang
- Center for High Pressure Science and Technology Advanced ResearchShanghai201203China
| | - Yi Zhao
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Lingling Gao
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Changhua Li
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Weizheng Cao
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Mingxin Zhang
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Lili Zhang
- Shanghai Synchrotron Radiation FacilityShanghai Advanced Research InstituteChinese Academy of SciencesShanghai201203China
| | - Mingtao Li
- Center for High Pressure Science and Technology Advanced ResearchShanghai201203China
| | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced ResearchShanghai201203China
| | - Wenge Yang
- Center for High Pressure Science and Technology Advanced ResearchShanghai201203China
| | - Jian Sun
- National Laboratory of Solid State MicrostructuresSchool of Physics and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China
| | - Yulin Chen
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
- ShanghaiTech Laboratory for Topological PhysicsShanghaiTech UniversityShanghai201210China
- Department of PhysicsClarendon LaboratoryUniversity of OxfordParks RoadOxfordOX1 3PUUK
| | - Zhiwei Wang
- Centre for Quantum PhysicsKey Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE)School of PhysicsBeijing Institute of TechnologyBeijing100081China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic SystemsBeijing Institute of TechnologyBeijing100081China
- Material Science CenterYangtze Delta Region Academy of Beijing Institute of TechnologyJiaxing314011China
| | - Yugui Yao
- Centre for Quantum PhysicsKey Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE)School of PhysicsBeijing Institute of TechnologyBeijing100081China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic SystemsBeijing Institute of TechnologyBeijing100081China
| | - Yanpeng Qi
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
- ShanghaiTech Laboratory for Topological PhysicsShanghaiTech UniversityShanghai201210China
- Shanghai Key Laboratory of High‐resolution Electron MicroscopyShanghaiTech UniversityShanghai201210China
| |
Collapse
|
47
|
Tang WQ, Yi X, Guan H, Wang XW, Gu YW, Zhao YJ, Fu J, Li W, Cheng Y, Meng SS, Xu M, Zhang QH, Gu L, Kong X, Liu DH, Wang W, Gu ZY. Bipolar Molecular Torque Wrench Modulates the Stacking of Two-Dimensional Metal-Organic Framework Nanosheets. J Am Chem Soc 2023. [PMID: 38029332 DOI: 10.1021/jacs.3c06731] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
The precise modulation of nanosheet stacking modes introduces unforeseen properties and creates momentous applications but remains a challenge. Herein, we proposed a strategy using bipolar molecules as torque wrenches to control the stacking modes of 2-D Zr-1,3,5-(4-carboxylphenyl)-benzene metal-organic framework (2-D Zr-BTB MOF) nanosheets. The bipolar phenyl-alkanes, phenylmethane (P-C1) and phenyl ethane (P-C2), predominantly instigated the rotational stacking of Zr-BTB-P-C1 and Zr-BTB-P-C2, displaying a wide angular distribution. This included Zr-BTB-P-C1 orientations at 0, 12, 18, and 24° and Zr-BTB-P-C2 orientations at 0, 6, 12, 15, 24, and 30°. With reduced polarity, phenyl propane (P-C3) and phenyl pentane (P-C5) introduced steric hindrance and facilitated alkyl hydrophobic interactions with the nanosheets, primarily resulting in the modulation of eclipsed stacking for Zr-BTB-P-C3 (64.8%) and Zr-BTB-P-C5 (93.3%) nanosheets. The precise angle distributions of four Zr-BTB-P species were in agreement with theoretical calculations. The alkyl induction mechanism was confirmed by the sequential guest replacement and 2-D 13C-1H heteronuclear correlation (HETCOR). In addition, at the single-particle level, we first observed that rotational stacked pores exhibited similar desorption rates for xylene isomers, while eclipsed stacked pores showed significant discrepancy for xylenes. Moreover, the eclipsed nanosheets as stationary phases exhibited high resolution, selectivity, repeatability, and durability for isomer separation. The universality was proven by another series of bipolar acetate-alkanes. This bipolar molecular torque wrench strategy provides an opportunity to precisely control the stacking modes of porous nanosheets.
Collapse
Affiliation(s)
- Wen-Qi Tang
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, College of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| | - Xuannuo Yi
- State Key Laboratory of Analytical Chemistry for Life Science, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Hanxi Guan
- Institute of Zhejiang University-Quzhou, Quzhou 324100, China
- Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Xiao-Wei Wang
- State Key Laboratory of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yue-Wen Gu
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, College of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| | - Ying-Jie Zhao
- State Key Laboratory of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
- China Fire and Rescue Institute, Beijing 102202, China
| | - Jia Fu
- State Key Laboratory of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Wang Li
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, College of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| | - Yue Cheng
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, College of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| | - Sha-Sha Meng
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, College of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| | - Ming Xu
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, College of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| | - Qing-Hua Zhang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lin Gu
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xueqian Kong
- Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Da-Huan Liu
- State Key Laboratory of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Wei Wang
- State Key Laboratory of Analytical Chemistry for Life Science, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Zhi-Yuan Gu
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, College of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| |
Collapse
|
48
|
Xiang X, Guo Z, Chen Y, Lv X, Li J, Gu C, Yu H, Liang W, Wang Z, Yu X, Peng F. Discovery of Metastable W 3P Single Crystals with High Hardness and Superconductivity. Inorg Chem 2023; 62:19279-19287. [PMID: 37950692 DOI: 10.1021/acs.inorgchem.3c02864] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2023]
Abstract
Hard and superconducting materials play significant roles in their respective application areas and are also crucial research fields in condensed matter physics. Materials with the key properties of both hard and superconducting properties could lead to technology development, but it is also full of challenges. Herein, we report the synthesis of high-quality metastable W3P single crystals with superconductivity and excellent mechanical properties. The synergistic effect of temperature and pressure was effective in suppressing further decomposition of metastable W3P as-synthesized by our synthesis technique (high-pressure and high-temperature method). The transport and magnetic measurements indicate that W3P is a typical type-II BCS superconductor, displaying a superconducting transition temperature of 5.9 K and an impressive critical magnetic field of 4.35 T. Theory calculations reveal a metallic property in W3P, and the phonon modes of the vibration of W atoms are important for electron-phonon interaction. Meanwhile, W3P shows excellent mechanical properties with a high fracture toughness of 8 MPa m1/2 and an impressive asymptotic hardness of 22 GPa, which is currently reported as being the hardest among transition metal phosphides. It opens up a new class of advanced materials that combine excellent mechanical properties with superconductivity.
Collapse
Affiliation(s)
- Xiaojun Xiang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
| | - Zhaopeng Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yingying Chen
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
| | - Xinyu Lv
- College of Physics, Sichuan University, Chengdu 610065, China
| | - Junkai Li
- Center for High Pressure Science & Technology Advanced Research, Beijing 100190, China
| | - Chao Gu
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Hui Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Wenjia Liang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
| | - Zhijun Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiaohui Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Fang Peng
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
| |
Collapse
|
49
|
Sanchez JJ, Fabbris G, Choi Y, DeStefano JM, Rosenberg E, Shi Y, Malinowski P, Huang Y, Mazin II, Kim JW, Chu JH, Ryan PJ. Strain-switchable field-induced superconductivity. SCIENCE ADVANCES 2023; 9:eadj5200. [PMID: 38000034 PMCID: PMC10672156 DOI: 10.1126/sciadv.adj5200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/26/2023] [Indexed: 11/26/2023]
Abstract
Field-induced superconductivity is a rare phenomenon where an applied magnetic field enhances or induces superconductivity. Here, we use applied stress as a control switch between a field-tunable superconducting state and a robust non-field-tunable state. This marks the first demonstration of a strain-tunable superconducting spin valve with infinite magnetoresistance. We combine tunable uniaxial stress and applied magnetic field on the ferromagnetic superconductor Eu(Fe0.88Co0.12)2As2 to shift the field-induced zero-resistance temperature between 4 K and a record-high value of 10 K. We use x-ray diffraction and spectroscopy measurements under stress and field to reveal that strain tuning of the nematic order and field tuning of the ferromagnetism act as independent control parameters of the superconductivity. Combining comprehensive measurements with DFT calculations, we propose that field-induced superconductivity arises from a novel mechanism, namely, the uniquely dominant effect of the Eu dipolar field when the exchange field splitting is nearly zero.
Collapse
Affiliation(s)
- Joshua J. Sanchez
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Department of Physics, University of Washington, Seattle, WA 98195, USA
| | - Gilberto Fabbris
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Yongseong Choi
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA
| | | | - Elliott Rosenberg
- Department of Physics, University of Washington, Seattle, WA 98195, USA
| | - Yue Shi
- Department of Physics, University of Washington, Seattle, WA 98195, USA
| | - Paul Malinowski
- Department of Physics, University of Washington, Seattle, WA 98195, USA
- Department of Physics, Cornell University, Ithaca, NY 14853, USA
| | - Yina Huang
- Department of Physics, Zhejiang University of Science and Technology, Hangzhou 310023, People’s Republic of China
| | - Igor I. Mazin
- Department of Physics and Astronomy and Quantum Science and Engineering Center, George Mason University, Fairfax, VA 22030, USA
| | - Jong-Woo Kim
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Jiun-Haw Chu
- Department of Physics, University of Washington, Seattle, WA 98195, USA
| | - Philip J. Ryan
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA
| |
Collapse
|
50
|
Li Y, Wang K, Wang Y, Qian Z, Huang W, Wang J, Yang Q, Wang H, Liao J, Hussain S, Xie L, Qi J. Synthesis of component-controllable monolayer Mo xW (1-x)S 2ySe 2(1-y) alloys with continuously tunable band gap and carrier type. RSC Adv 2023; 13:34464-34474. [PMID: 38024984 PMCID: PMC10667966 DOI: 10.1039/d3ra07065d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 11/17/2023] [Indexed: 12/01/2023] Open
Abstract
Alloying can effectively modify electronic and optical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). However, efficient and simple methods to synthesize atomically thin TMD alloys need to be further developed. In this study, we synthesized 25 monolayer MoxW(1-x)S2ySe2(1-y) alloys by using a new liquid phase edge epitaxy (LPEE) growth method with high controllability. This straightforward approach can be used to obtain monolayer materials and operates on a self-limiting growth mechanism. The process allows the liquid solution to come into contact with the two-dimensional grains only at their edges, resulting in epitaxy confined only along the in-plane direction, which produces exclusively monolayer epitaxy. By controlling the weight ratio of MoS2/WSe2 (MoSe2/WS2), 25 monolayer MoxW(1-x)S2ySe2(1-y) alloys with different atomic ratios can be obtained on sapphire substrates, with band gap ranging from WS2 (1.55 eV) to MoSe2 (1.99 eV) and a continuously broad spectrum ranging from 623 nm to 800 nm. By adjusting the alloy composition, the carrier type and carrier mobility of alloy-based field-effect transistors can be modulated. In particular, the adjustable conductivity of MoxW(1-x)S2ySe2(1-y) alloys from n-type to bipolar type is achieved for the first time. This general synthetic strategy provides a foundation for the development of monolayer TMD alloys with multiple components and various 2D materials.
Collapse
Affiliation(s)
- You Li
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Kangkang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Yiwen Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Ziyue Qian
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Wenbin Huang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Junqi Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Qichao Yang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Honggang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Junyi Liao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Sabir Hussain
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Junjie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| |
Collapse
|