Friction between van der Waals Solids during Lattice Directed Sliding

Nanometer-scale crystals of the two-dimensional oxide molybdenum trioxide (MoO₃) were formed atop the transition metal dichalcogenides MoS₂ and MoSe₂. The MoO₃ nanocrystals are partially commensurate with the dichalcogenide substrates, being aligned only along one of the substrate's crystallographic axes. These nanocrystals can be slid only along the aligned direction and maintain their alignment with the substrate during motion. Using an AFM probe to oscillate the nanocrystals, it was found that the lateral force required to move them increased linearly with nanocrystal area. The slope of this curve, the interfacial shear strength, was significantly lower than for macroscale systems. It also depended strongly on the duration and the velocity of sliding of the crystal, suggesting a thermal activation model for the system. Finally, it was found that lower commensuration between the nanocrystal and the substrate increased the interfacial shear, a trend opposite that predicted theoretically.

Geometrical Effect in 2D Nanopores

A long-standing problem in the application of solid-state nanopores is the lack of the precise control over the geometry of artificially formed pores compared to the well-defined geometry in their biological counterpart, that is, protein nanopores. To date, experimentally investigated solid-state nanopores have been shown to adopt an approximately circular shape. In this Letter, we investigate the geometrical effect of the nanopore shape on ionic blockage induced by DNA translocation using triangular h-BN nanopores and approximately circular molybdenum disulfide (MoS₂) nanopores. We observe a striking geometry-dependent ion scattering effect, which is further corroborated by a modified ionic blockage model. The well-acknowledged ionic blockage model is derived from uniform ion permeability through the 2D nanopore plane and hemisphere like access region in the nanopore vicinity. On the basis of our experimental results, we propose a modified ionic blockage model, which is highly related to the ionic profile caused by geometrical variations. Our findings shed light on the rational design of 2D nanopores and should be applicable to arbitrary nanopore shapes.

Transferable Organic Semiconductor Nanosheets for Application in Electronic Devices

A method has been developed to stabilize and transfer nanofilms of functional organic semiconductors. The method is based on crosslinking of their topmost layers by low energy electron irradiation. The films can then be detached from their original substrates and subsequently deposited onto new solid or holey substrates retaining their structural integrity. Grazing incidence X-ray diffraction, X-ray specular reflectivity, and UV-Vis spectroscopy measurements reveal that the electron irradiation of ≈50 nm thick pentacene films results in crosslinking of their only topmost ≈5 nm (3-4 monolayers), whereas the deeper pentacene layers preserve their pristine crystallinity. The electronic performance of the transferred pentacene nanosheets in bottom contact field-effect devices is studied and it is found that they are fully functional and demonstrate superior charge injection properties in comparison to the pentacene films directly grown on the contact structures by vapor deposition. The new approach paves the way to integration of the organic semiconductor nanofilms on substrates unfavorable for their direct growth as well as to their implementation in hybrid devices with unusual geometries, e.g., in devices incorporating free-standing sheets.

Ambient Protection of Few-Layer Black Phosphorus via Sequestration of Reactive Oxygen Species

Few-layer black phosphorous (BP) has emerged as a promising candidate for next-generation nanophotonic and nanoelectronic devices. However, rapid ambient degradation of mechanically exfoliated BP poses challenges in its practical deployment in scalable devices. To date, the strategies employed to protect BP have relied upon preventing its exposure to atmospheric conditions. Here, an approach that allows this sensitive material to remain stable without requiring its isolation from the ambient environment is reported. The method draws inspiration from the unique ability of biological systems to avoid photo-oxidative damage caused by reactive oxygen species. Since BP undergoes similar photo-oxidative degradation, imidazolium-based ionic liquids are employed as quenchers of these damaging species on the BP surface. This chemical sequestration strategy allows BP to remain stable for over 13 weeks, while retaining its key electronic characteristics. This study opens opportunities to practically implement BP and other environmentally sensitive 2D materials for electronic applications.

Free-Standing Holey Ni(OH)2 Nanosheets with Enhanced Activity for Water Oxidation

Electrochemical water oxidation is the key technology in water-splitting reactions and rechargeable metal-air batteries, which is very attractive for renewable energy conversion and storage. Replacement of precious catalysts with cost-effective and highly active alternatives is still a great challenge. Herein, based on theoretical predictions, holey structures are designed and fabricated on the free-standing conventional 2D OER catalyst. By well-controlled defects engineering, uniform tiny holes are created on the free-standing Ni(OH)₂ nanosheets via a sol-gel method, with the embedded Zn components as the template for holes production. The whole preparation process is feasible and effective to make full use of the basal plane of 2D nanomaterials, which can provide higher surface area, richer defects, more grain boundaries, and edge sites, as well as greater distorted surfaces. Meanwhile, these holes developed inside the sheet structure can supply tremendous permeable channels for ions adsorption and transportation, enable a fast interfacial charge transfer and accelerate the reaction process. The as-prepared 2D holey Ni(OH)₂ nanostructures exhibit excellent catalytic performance toward electrochemical water oxidation, with lower onset overpotentials and higher current densities compared with the pristine Ni(OH)₂ catalyst, suggesting the holey defects engineering is a promising strategy for efficient water-splitting devices and rechargeable metal-air batteries.

Superlubricity between MoS2 Monolayers

The ultralow friction between atomic layers of hexagonal MoS₂ , an important solid lubricant and additive of lubricating oil, is thought to be responsible for its excellent lubricating performances. However, the quantitative frictional properties between MoS₂ atomic layers have not been directly tested in experiments due to the lack of conventional tools to characterize the frictional properties between 2D atomic layers. Herein, a versatile method for studying the frictional properties between atomic-layered materials is developed by combining the in situ scanning electron microscope technique with a Si nanowire force sensor, and the friction tests on the sliding between atomic-layered materials down to monolayers are reported. The friction tests on the sliding between incommensurate MoS₂ monolayers give a friction coefficient of ≈10^-4 in the regime of superlubricity. The results provide the first direct experimental evidence for superlubricity between MoS₂ atomic layers and open a new route to investigate frictional properties of broad 2D materials.

Chemical vapor deposition growth of bilayer graphene in between molybdenum disulfide sheets

Direct growth of flat micrometer-sized bilayer graphene islands in between molybdenum disulfide sheets is achieved by chemical vapor deposition of ethylene at about 800°C. The temperature assisted decomposition of ethylene takes place mainly at molybdenum disulfide step edges. The carbon atoms intercalate at this high temperature, and during the deposition process, through defects of the molybdenum disulfide surface such as steps and wrinkles. Post growth atomic force microscopy images reveal that circular flat graphene islands have grown at a high yield. They consist of two graphene layers stacked on top of each other with a total thickness of 0.74nm. Our results demonstrate direct, simple and high yield growth of graphene/molybdenum disulfide heterostructures, which can be of high importance in future nanoelectronic and optoelectronic applications.

Biphenylene and Phagraphene as Lithium Ion Battery Anode Materials

We present results of density functional theory calculations on the lithium (Li) ion storage capacity of biphenylene (BP) membrane and phagraphene (PhG) which are two-dimensional defected-graphene-like membranes. Both membranes show a larger capacity than graphene, Li₂C₆ and Li_1.5C₆ compared to LiC₆. We find that Li is very mobile on these materials and does not interact as strongly with the membranes. In the case of BP we also investigated the possible volume expansion on Li insertion. We find a 11% expansion, which is very similar to the one found in graphite. Our findings show that both membranes are suitable materials for lithium ion battery anodes.

CdSe Nanoplatelet Films with Controlled Orientation of their Transition Dipole Moment

Using liquid-liquid interfacial assembly, we control the deposition of CdSe nanoplatelets into face-down or edge-up configurations. Controlled assembly, combined with back focal plane imaging, enabled unambiguous determination of the transition dipole orientation. The transition dipole moment of the emissive band-edge exciton in CdSe nanoplatelets was found to be isotropically oriented within the plane of the nanoplatelet with no measurable out-of-plane component and no preference for the long- or short-axis of the nanoplatelet. Importantly, CdSe nanoplatelet films in the face-down configuration exhibited unity dipole orientation within the plane of the film, which could improve the external efficiency of nanoplatelet LEDs, lasers, photodetectors, and photovoltaic cells beyond that which is possible with isotropic emitters. We also show that the two self-assembled configurations have different Förster energy transfer rates, as a result of different dipole orientation and internanoplatelet distance.

Giant Gating Tunability of Optical Refractive Index in Transition Metal Dichalcogenide Monolayers

We report that the refractive index of transition metal dichacolgenide (TMDC) monolayers, such as MoS₂, WS₂, and WSe₂, can be substantially tuned by >60% in the imaginary part and >20% in the real part around exciton resonances using complementary metal-oxide-semiconductor (CMOS) compatible electrical gating. This giant tunablility is rooted in the dominance of excitonic effects in the refractive index of the monolayers and the strong susceptibility of the excitons to the influence of injected charge carriers. The tunability mainly results from the effects of injected charge carriers to broaden the spectral width of excitonic interband transitions and to facilitate the interconversion of neutral and charged excitons. The other effects of the injected charge carriers, such as renormalizing bandgap and changing exciton binding energy, only play negligible roles. We also demonstrate that the atomically thin monolayers, when combined with photonic structures, can enable the efficiencies of optical absorption (reflection) tuned from 40% (60%) to 80% (20%) due to the giant tunability of the refractive index. This work may pave the way toward the development of field-effect photonics in which the optical functionality can be controlled with CMOS circuits.

From Flatland to Spaceland: Higher Dimensional Patterning with Two-Dimensional Materials

The creation of three-dimensional (3D) structures from two-dimensional (2D) nanomaterial building blocks enables novel chemical, mechanical or physical functionalities that cannot be realized with planar thin films or in bulk materials. Here, we review the use of emerging 2D materials to create complex out-of-plane surface topographies and 3D material architectures. We focus on recent approaches that yield periodic textures or patterns, and present four techniques as case studies: (i) wrinkling and crumpling of planar sheets, (ii) encapsulation by crumpled nanosheet shells, (iii) origami folding and kirigami cutting to create programmed curvature, and (iv) 3D printing of 2D material suspensions. Work to date in this field has primarily used graphene and graphene oxide as the 2D building blocks, and we consider how these unconventional approaches may be extended to alternative 2D materials and their heterostructures. Taken together, these emerging patterning and texturing techniques represent an intriguing alternative to conventional materials synthesis and processing methods, and are expected to contribute to the development of new composites, stretchable electronics, energy storage devices, chemical barriers, and biomaterials.

Substrate-Friendly Growth of Large-Sized Ni(OH)2 Nanosheets for Flexible Electrochromic Films

Large-area, 2D, anisotropic, direct growth of nanostructures is considered an effective and straightforward way to readily fulfill transparent, flexible technology requirements. In addition, formation of thin hybrid structures by combining with another 2D material brings about dimensional advantages, such as intimate heterostructure functionalities, large specific area, and optical transparency. Here, we demonstrate 2D planar growth of thin Ni(OH)₂ nanosheets on arbitrary rigid and soft supports, by exploiting the growth strategies of oriented attachment induced by interfacial chemistry and the intrinsic driving force of layered structure constitution. Moreover, large-scale 2D heterohybrids have successfully been prepared by direct conformal growth of Ni(OH)₂ nanosheets overlying MoO₃ nanobelts. Unlike the exfoliation and transfer of 2D materials technique, this approach minimizes multiple process contamination and physical-handling structural defects. Accordingly, proof-of-concept flexible electrochromism is demonstrated in view of its prerequisite to the access of a large homogeneous material coating. The as-synthesized 2D layered structure affirms its optical and electrochemical superiority through the display of wide optical modulation, high coloration efficiency, good cyclic stability, and flexibility.

An All-Stretchable-Component Sodium-Ion Full Battery

Stretchable energy-storage devices receive considerable attention due to their promising applications in future wearable technologies. However, they currently suffer from many problems, including low utility of active materials, limited multidirectional stretchability, and poor stability under stretched conditions. In addition, most proposed designs use one or more rigid components that fail to meet the stretchability requirement for the entire device. Here, an all-stretchable-component sodium-ion full battery based on graphene-modified poly(dimethylsiloxane) sponge electrodes and an elastic gel membrane is developed for the first time. The battery exhibits reasonable electrochemical performance and robust mechanical deformability; its electrochemical characteristics can be well-maintained under many different stretched conditions and after hundreds of stretching-release cycles. This novel design integrating all stretchable components provides a pathway toward the next generation of wearable energy devices in modern electronics.

Nondestructive imaging of atomically thin nanostructures buried in silicon

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components of devices for next-generation classical and quantum information processing. Until now, the characteristics of buried dopant nanostructures could only be inferred from destructive techniques and/or the performance of the final electronic device; this severely limits engineering and manufacture of real-world devices based on atomic-scale lithography. Here, we use scanning microwave microscopy (SMM) to image and electronically characterize three-dimensional phosphorus nanostructures fabricated via scanning tunneling microscope-based lithography. The SMM measurements, which are completely nondestructive and sensitive to as few as 1900 to 4200 densely packed P atoms 4 to 15 nm below a silicon surface, yield electrical and geometric properties in agreement with those obtained from electrical transport and secondary ion mass spectroscopy for unpatterned phosphorus δ layers containing ~10¹³ P atoms. The imaging resolution was 37 ± 1 nm in lateral and 4 ± 1 nm in vertical directions, both values depending on SMM tip size and depth of dopant layers. In addition, finite element modeling indicates that resolution can be substantially improved using further optimized tips and microwave gradient detection. Our results on three-dimensional dopant structures reveal reduced carrier mobility for shallow dopant layers and suggest that SMM could aid the development of fabrication processes for surface code quantum computers.

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe₂ ), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe₂ show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe₂ to exhibit electron-dominated transport with high mobility (µ_{e (max)} = 216 cm² V^-1 s^-1 ) and on/off ratio up to 10³ . Hole-dominated-transport PdSe₂ can be obtained by molecular doping using F₄ -TCNQ. This pioneer work on PdSe₂ will spark interests in the less explored regime of noble-TMDCs.

2D Monoelemental Arsenene, Antimonene, and Bismuthene: Beyond Black Phosphorus

Two-dimensional materials are responsible for changing research in materials science. After graphene and its counterparts, graphane, fluorographene, and others were introduced, waves of renewed interest in 2D binary compounds occurred, such as in metal oxides, transition-metal dichalcogenides (most often represented by MoS₂ ), metal oxy/hydroxide borides, and MXenes, to name the most prominent. Recently, interest has turned to two-dimensional monoelemental structures, such as monolayer black phosphorus and, very recently, to monolayer arsenic, antimony, and bismuth. Here, a short overview is provided of the area of exponentially increasing research in arsenene, antimonene, and bismuthene, which belong to the fifth main group of elements, the so-called pnictogens. A short review of historical work is provided, the properties of bulk allotropes of As, Sb, and Bi discussed, and then theoretical and experimental research on mono- and few-layered arsenene, antimonene, and bismuthene addressed, discussing their structures and properties.

Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics

p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe₂ ) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe₂ enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe₂ heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals.

Electrokinetic Energy Conversion in Self-Assembled 2D Nanofluidic Channels with Janus Nanobuilding Blocks

Inspired by the microstructure of nacre, material design, and large-scale integration of artificial nanofluidic devices step into a completely new stage, termed 2D nanofluidics, in which mass and charge transportation are confined in the interstitial space between reconstructed 2D nanomaterials. However, all the existing 2D nanofluidic systems are reconstituted from homogeneous nanobuilding blocks. Herein, this paper reports the bottom-up construction of 2D nanofluidic materials with kaolinite-based Janus nanobuilding blocks, and demonstrates two types of electrokinetic energy conversion through the network of 2D nanochannels. Being different from previous 2D nanofluidic systems, two distinct types of sub-nanometer- and nanometer-wide fluidic channels of about 6.8 and 13.8 Å are identified in the reconstructed kaolinite membranes (RKM), showing prominent surface-governed ion transport behaviors and nearly perfect cation-selectivity. The RKMs exhibit superior capability in osmotic and hydraulic energy conversion, compared to graphene-based membranes. The mineral-based 2D nanofluidic system opens up a new avenue to self-assemble asymmetric 2D nanomaterials for energy, environmental, and healthcare applications.

Neat monolayer tiling of molecularly thin two-dimensional materials in 1 min

Controlled arrangement of molecularly thin two-dimensional (2D) materials on a substrate, particularly into precisely organized mono- and multilayer structures, is a key to design a nanodevice using their unique and enhanced physical properties. Several techniques such as mechanical transfer process and Langmuir-Blodgett deposition have been applied for this purpose, but they have severe restrictions for large-scale practical applications, for example, limited processable area and long fabrication time, requiring skilled multistep operations. We report a facile one-pot spin-coating method to realize dense monolayer tiling of various 2D materials, such as graphene and metal oxide nanosheets, within 1 min over a wide area (for example, a 30-mmφ substrate). Centrifugal force drives the nanosheets in a thin fluid layer to the substrate edge where they are packed edge to edge all the way to the central region, without forming overlaps. We investigated the relationship between precursor concentration, rotation speed, and ultraviolet-visible absorbance and developed an effective method to optimize the parameters for neat monolayer films. The multilayer buildup is feasible by repeating the spin-coating process combined with a heat treatment at moderate temperature. This versatile solution-based technique will provide both fundamental and practical advancements in the rapid large-scale production of artificial lattice-like films and nanodevices based on 2D materials.

A Free-Standing and Self-Healable 2D Supramolecular Material Based on Hydrogen Bonding: A Nanowire Array with Sub-2-nm Resolution

In many 2D materials reported thus far, the forces confining atoms in a 2D plane are often strong interactions, such as covalent bonding. Herein, the first demonstration that hydrogen (H)-bonding can be utilized to assemble polydiacetylene (a conductive polymer) toward a 2D material, which is stable enough to be free-standing, is shown. The 2D material is well characterized by a large number of techniques (mainly different microscopy techniques). The H-bonding allows splitting of the material into ribbons, which can reassemble, similar to a zipper, leading to the first example of a healable 2D material. Moreover, such technology can easily create 2D, organic, conductive nanowire arrays with sub-2-nm resolution. This material may have potential applications in stretchable electronics and nanowire cross-bar arrays.

Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus

The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular "fingerprint" imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost photodetectors requiring cryogenic operation. We report black arsenic phosphorus-based long-wavelength IR photodetectors, with room temperature operation up to 8.2 μm, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature-specific detectivity higher than 4.9 × 10⁹ Jones was obtained in the 3- to 5-μm range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodetectors not only exemplify black arsenic phosphorus as a promising candidate for MIR optoelectronic applications but also pave the way for a general strategy to suppress 1/f noise in photonic devices.

Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films

We demonstrate the growth of overlapping grain boundaries in continuous, polycrystalline hexagonal boron nitride (h-BN) monolayer films via scalable catalytic chemical vapor deposition. Unlike the commonly reported atomically stitched grain boundaries, these overlapping grain boundaries do not consist of defect lines within the monolayer films but are composed of self-sealing bilayer regions of limited width. We characterize this overlapping h-BN grain boundary structure in detail by complementary (scanning) transmission electron microscopy techniques and propose a catalytic growth mechanism linked to the subsurface/bulk of the process catalyst and its boron and nitrogen solubilities. Our data suggest that the overlapping grain boundaries are comparatively resilient against deleterious pinhole formation associated with grain boundary defect lines and thus may reduce detrimental breakdown effects when polycrystalline h-BN monolayer films are used as ultrathin dielectrics, barrier layers, or separation membranes.

Highly Stable Near-Unity Photoluminescence Yield in Monolayer MoS2 by Fluoropolymer Encapsulation and Superacid Treatment

Recently, there has been considerable research interest in two-dimensional (2D) transition-metal dichalcogenides (TMDCs) for future optoelectronic applications. It has been shown that surface passivation with the organic nonoxidizing superacid bis(trifluoromethane)sulfonamide (TFSI) produces MoS₂ and WS₂ monolayers whose recombination is at the radiative limit, with a photoluminescence (PL) quantum yield (QY) of ∼100%. While the surface passivation persists under ambient conditions, exposure to conditions such as water, solvents, and low pressure found in typical semiconductor processing degrades the PL QY. Here, an encapsulation/passivation approach is demonstrated that yields near-unity PL QY in MoS₂ and WS₂ monolayers which are highly stable against postprocessing. The approach consists of two simple steps: encapsulation of the monolayers with an amorphous fluoropolymer and a subsequent TFSI treatment. The TFSI molecules are able to diffuse through the encapsulation layer and passivate the defect states of the monolayers. Additionally, we demonstrate that the encapsulation layer can be patterned by lithography and is compatible with subsequent fabrication processes. Therefore, our work presents a feasible route for future fabrication of highly efficient optoelectronic devices based on TMDCs.

Area- and Thickness-Dependent Biexciton Auger Recombination in Colloidal CdSe Nanoplatelets: Breaking the "Universal Volume Scaling Law"

Colloidal nanoplatelets (NPLs) have shown great potentials for lasing applications due to their sharp absorption and emission peaks, large absorption cross sections, large radiative decay rates, and long multiexciton lifetimes. How multiexciton lifetimes depend on material dimensions remains unknown in two-dimensional (2D) materials, despite being a key parameter affecting optical gain threshold and many other properties. Herein, we report a study of room-temperature biexciton Auger recombination time of CdSe NPLs as a function of thickness and lateral area. Comparison of all NPLs shows that the biexciton lifetime does not increase linearly with volume, unlike previously reported "universal volume scaling law" for quantum dots. For NPLs of the same thickness (∼1.8 nm), the biexciton lifetime increase linearly with their lateral area (from 143.7 ± 12.6 to 320.1 ± 17.1 ps when the area increases from 90.5 ± 21.4 to 234.2 ± 41.9 nm²). The biexciton lifetime depends linearly on (1/E_k(e))^7/2 (E_k(e) is the electron confinement energy) or nearly linearly on d⁷ (d is NPL thickness). The observed dependence is consistent with a model in which biexciton Auger recombination rate scales with the product of exciton binary collision frequency and Auger recombination probability in biexciton complexes. The linear increase of Auger lifetimes with NPL lateral areas reflects a 1/area dependence of the binary collision frequency for 2D excitons and the thickness-dependent biexciton Auger recombination time is attributed to its strong dependence on the degree of quantum confinement. This model may be generally applicable to exciton Auger recombination in quantum confined 1D and 2D nanomaterials.

Photoluminescence Segmentation within Individual Hexagonal Monolayer Tungsten Disulfide Domains Grown by Chemical Vapor Deposition

We show that hexagonal domains of monolayer tungsten disulfide (WS₂) grown by chemical vapor deposition (CVD) with powder precursors can have discrete segmentation in their photoluminescence (PL) emission intensity, forming symmetric patterns with alternating bright and dark regions. Two-dimensional maps of the PL reveal significant reduction within the segments associated with the longest sides of the hexagonal domains. Analysis of the PL spectra shows differences in the exciton to trion ratio, indicating variations in the exciton recombination dynamics. Monolayers of WS₂ hexagonal islands transferred to new substrates still exhibit this PL segmentation, ruling out local strain in the regions as the dominant cause. High-power laser irradiation causes preferential degradation of the bright segments by sulfur removal, indicating the presence of a more defective region that is higher in oxidative reactivity. Atomic force microscopy (AFM) images of topography and amplitude modes show uniform thickness of the WS₂ domains and no signs of segmentation. However, AFM phase maps do show the same segmentation of the domain as the PL maps and indicate that it is caused by some kind of structural difference that we could not clearly identify. These results provide important insights into the spatially varying properties of these CVD-grown transition metal dichalcogenide materials, which may be important for their effective implementation in fast photo sensors and optical switches.

Quantifying Plasmon-Enhanced Light Absorption in Monolayer WS2 Films

Transition metal dichalcogenide semiconductors hold great promise in photonic and optoelectronic applications, such as flexible solar cells and ultrafast photodetectors, because of their direct band gap and few-atom thicknesses. However, it is crucial to understand and improve the absorption characteristics of these monolayer semiconducting materials. In this study, we conducted a systematic numerical and experimental investigation to demonstrate and quantify absorption enhancement in WS₂ monolayer films, in the presence of silver plasmonic nanodisk arrays. Our analysis combining full-field electromagnetic simulations and optical absorption spectroscopy measurements indicates a fourfold enhancement in the absorption of an WS₂ film near its band edge, close to the plasmonic resonance wavelength of Ag nanodisk arrays. The proposed Ag/WS₂ heterostructure exhibited a 2.5-fold enhancement in calculated short-circuit current. Such hybrid plasmonic or two-dimensional (2D) materials with enhanced absorption pave the way for the practical realization of 2D optoelectronic devices, including ultrafast photodetectors and solar cells.

Role of Charge Traps in the Performance of Atomically Thin Transistors

Transient currents in atomically thin MoTe₂ field-effect transistors (FETs) are measured during cycles of pulses through the gate electrode. The curves of the transient currents are analyzed in light of a newly proposed model for charge-trapping dynamics that renders a time-dependent change in the threshold voltage as the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based devices. Hence, the model is vital to the intelligent design of fast and highly efficient optoelectronic devices.

Anisotropic MoS2 Nanosheets Grown on Self-Organized Nanopatterned Substrates

Manipulating the anisotropy in 2D nanosheets is a promising way to tune or trigger functional properties at the nanoscale. Here, a novel approach is presented to introduce a one-directional anisotropy in MoS₂ nanosheets via chemical vapor deposition (CVD) onto rippled patterns prepared on ion-sputtered SiO₂ /Si substrates. The optoelectronic properties of MoS₂ are dramatically affected by the rippled MoS₂ morphology both at the macro- and the nanoscale. In particular, strongly anisotropic phonon modes are observed depending on the polarization orientation with respect to the ripple axis. Moreover, the rippled morphology induces localization of strain and charge doping at the nanoscale, thus causing substantial redshifts of the phonon mode frequencies and a topography-dependent modulation of the MoS₂ workfunction, respectively. This study paves the way to a controllable tuning of the anisotropy via substrate pattern engineering in CVD-grown 2D nanosheets.

A two-dimensional semiconductor transistor with boosted gate control and sensing ability

Transistors with exfoliated two-dimensional (2D) materials on a SiO₂/Si substrate have been applied and have been proven effective in a wide range of applications, such as circuits, memory, photodetectors, gas sensors, optical modulators, valleytronics, and spintronics. However, these devices usually suffer from limited gate control because of the thick SiO₂ gate dielectric and the lack of reliable transfer method. We introduce a new back-gate transistor scheme fabricated on a novel Al₂O₃/ITO (indium tin oxide)/SiO₂/Si "stack" substrate, which was engineered with distinguishable optical identification of exfoliated 2D materials. High-quality exfoliated 2D materials could be easily obtained and recognized on this stack. Two typical 2D materials, MoS₂ and ReS₂, were implemented to demonstrate the enhancement of gate controllability. Both transistors show excellent electrical characteristics, including steep subthreshold swing (62 mV dec^-1 for MoS₂ and 83 mV dec^-1 for ReS₂), high mobility (61.79 cm² V^-1 s^-1 for MoS₂ and 7.32 cm² V^-1 s^-1 for ReS₂), large on/off ratio (~10⁷), and reasonable working gate bias (below 3 V). Moreover, MoS₂ and ReS₂ photodetectors fabricated on the basis of the scheme have impressively leading photoresponsivities of 4000 and 760 A W^-1 in the depletion area, respectively, and both have exceeded 10⁶ A W^-1 in the accumulation area, which is the best ever obtained. This opens up a suite of applications of this novel platform in 2D materials research with increasing needs of enhanced gate control.

Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. We create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI₃ and a monolayer of WSe₂. We observe unprecedented control of the spin and valley pseudospin in WSe₂, where we detect a large magnetic exchange field of nearly 13 T and rapid switching of the WSe₂ valley splitting and polarization via flipping of the CrI₃ magnetization. The WSe₂ photoluminescence intensity strongly depends on the relative alignment between photoexcited spins in WSe₂ and the CrI₃ magnetization, because of ultrafast spin-dependent charge hopping across the heterostructure interface. The photoluminescence detection of valley pseudospin provides a simple and sensitive method to probe the intriguing domain dynamics in the ultrathin magnet, as well as the rich spin interactions within the heterostructure.

Synthesis and Electrochemical Properties of Two-Dimensional Hafnium Carbide

We demonstrate fabrication of a two-dimensional Hf-containing MXene, Hf₃C₂T_z, by selective etching of a layered parent Hf₃[Al(Si)]₄C₆ compound. A substitutional solution of Si on Al sites effectively weakened the interfacial adhesion between Hf-C and Al(Si)-C sublayers within the unit cell of the parent compound, facilitating the subsequent selective etching. The underlying mechanism of the Si-alloying-facilitated etching process is thoroughly studied by first-principles density functional calculations. The result showed that more valence electrons of Si than Al weaken the adhesive energy of the etching interface. The MXenes were determined to be flexible and conductive. Moreover, this 2D Hf-containing MXene material showed reversible volumetric capacities of 1567 and 504 mAh cm^-3 for lithium and sodium ions batteries, respectively, at a current density of 200 mAg^-1 after 200 cycles. Thus, Hf₃C₂T_z MXenes with a 2D structure are candidate anode materials for metal-ion intercalation, especially for applications where size matters.

Atomistic Insights into Nucleation and Formation of Hexagonal Boron Nitride on Nickel from First-Principles-Based Reactive Molecular Dynamics Simulations

Atomistic-scale insights into the growth of a continuous, atomically thin hexagonal boron nitride (hBN) lattice from elemental boron and nitrogen on Ni substrates were obtained from multiscale modeling combining density functional theory (DFT) and reactive molecular dynamics. The quantum mechanical calculations focused on the adsorption and reaction energetics for the hBN building-block species, i.e., atomic B, N, B_xN_y (x, y = 1, 2), on Ni(111) and Ni(211), and the diffusion pathways of elemental B and N on these slab model surfaces and in the sublayer. B can diffuse competitively on both the surface and in the sublayer, while N diffuses strictly on the substrate surface. The DFT data were then used to generate a classical description of the Ni-B and Ni-N pair interactions within the formulation of the reactive force field, ReaxFF. Using the potential developed from this work, the elementary nucleation and growth process of an hBN monolayer structure from elemental B and N is shown at the atomistic scale. The nucleation initiates from the growth of linear BN chains, which evolve into branched and then hexagonal lattices. Subsequent DFT calculations confirmed the structure evolution energetically and validate the self-consistency of this multiscale modeling framework. On the basis of this framework, the fundamental aspects regarding crystal quality and the role of temperature and substrates used during hBN growth can also be understood.

A perspective on auxetic nanomaterials

Nanomaterials have recently been found to exhibit auxetic behavior, or a negative Poisson's ratio, whereby the lateral dimensions of the material expand, rather than shrink, in response to applied tensile loading. In this brief review, we use the form of question-answer to highlight key points and outstanding issues related to the field of auxetic nanomaterials.

Dynamic Phase Engineering of Bendable Transition Metal Dichalcogenide Monolayers

Current interest in two-dimensional (2D) materials is driven in part by the ability to dramatically alter their optoelectronic properties through strain and phase engineering. A combination of these approaches can be applied in quasi-2D transition metal dichalcogenide (TMD) monolayers to induce displacive structural transformations between semiconducting (H) and metallic/semimetallic (T') phases. We classify such transformations in Group VI TMDs, and formulate a multiscale, first-principles-informed modeling framework to describe evolution of microstructural domain morphologies in elastically bendable 2D monolayers. We demonstrate that morphology and mechanical response can be controlled via application of strain either uniformly or through local probes to generate functionally patterned conductive T' domains. Such systems form dynamically programmable electromechanical 2D materials, capable of rapid local switching between domains with qualitatively different transport properties. This enables dynamic "drawing" of localized conducting regions in an otherwise semiconducting TMD monolayer, opening several interesting device-relevant functionalities such as the ability to dynamically "rewire" a device in real time.

Single-layer nanosheets with exceptionally high and anisotropic hydroxyl ion conductivity

When the dimensionality of layered materials is reduced to the physical limit, an ultimate two-dimensional (2D) anisotropy and/or confinement effect may bring about extraordinary physical and chemical properties. Layered double hydroxides (LDHs), bearing abundant hydroxyl groups covalently bonded within 2D host layers, have been proposed as inorganic anion conductors. However, typical hydroxyl ion conductivities for bulk or lamellar LDHs, generally up to 10^-3 S cm^-1, are considered not high enough for practical applications. We show that single-layer LDH nanosheets exhibited exceptionally high in-plane conductivities approaching 10^-1 S cm^-1, which were the highest among anion conductors and comparable to proton conductivities in commercial proton exchange membranes (for example, Nafion). The in-plane conductivities were four to five orders of magnitude higher than the cross-plane or cross-membrane values of restacked LDH nanosheets. This 2D superionic transport characteristic might have great promises in a variety of applications including alkaline fuel cells and water electrolysis.

2D Materials for Optical Modulation: Challenges and Opportunities

Owing to their atomic layer thickness, strong light-material interaction, high nonlinearity, broadband optical response, fast relaxation, controllable optoelectronic properties, and high compatibility with other photonic structures, 2D materials, including graphene, transition metal dichalcogenides and black phosphorus, have been attracting increasing attention for photonic applications. By tuning the carrier density via electrical or optical means that modifies their physical properties (e.g., Fermi level or nonlinear absorption), optical response of the 2D materials can be instantly changed, making them versatile nanostructures for optical modulation. Here, up-to-date 2D material-based optical modulation in three categories is reviewed: free-space, fiber-based, and on-chip configurations. By analysing cons and pros of different modulation approaches from material and mechanism aspects, the challenges faced by using these materials for device applications are presented. In addition, thermal effects (e.g., laser induced damage) in 2D materials, which are critical to practical applications, are also discussed. Finally, the outlook for future opportunities of these 2D materials for optical modulation is given.

Layer Dependence and Light Tuning Surface Potential of 2D MoS2 on Various Substrates

Here surface potential of chemical vapor deposition (CVD) grown 2D MoS₂ with various layers is reported, and the effect of adherent substrate and light illumination on surface potential of monolayer MoS₂ are investigated. The surface potential of MoS₂ on Si/SiO₂ substrate decreases from 4.93 to 4.84 eV with the increase in the number of layer from 1 to 4 or more. Especially, the surface potentials of monolayer MoS₂ are strongly dependent on its adherent substrate, which are determined to be 4.55, 4.88, 4.93, 5.10, and 5.50 eV on Ag, graphene, Si/SiO₂ , Au, and Pt substrates, respectively. Light irradiation is introduced to tuning the surface potential of monolayer MoS₂ , with the increase in light intensity, the surface potential of MoS₂ on Si/SiO₂ substrate decreases from 4.93 to 4.74 eV, while increases from 5.50 to 5.56 eV on Pt substrate. The I-V curves on vertical of monolayer MoS₂ /Pt heterojunction show the decrease in current with the increase of light intensity, and Schottky barrier height at MoS₂ /Pt junctions increases from 0.302 to 0.342 eV. The changed surface potential can be explained by trapped charges on surface, photoinduced carriers, charge transfer, and local electric field.

In-Plane 2H-1T' MoTe2 Homojunctions Synthesized by Flux-Controlled Phase Engineering

The fabrication of in-plane 2H-1T' MoTe₂ homojunctions by the flux-controlled, phase-engineering of few-layer MoTe₂ from Mo nanoislands is reported. The phase of few-layer MoTe₂ is controlled by simply changing Te atomic flux controlled by the temperature of the reaction vessel. Few-layer 2H MoTe₂ is formed with high Te flux, while few-layer 1T' MoTe₂ is obtained with low Te flux. With medium flux, few-layer in-plane 2H-1T' MoTe₂ homojunctions are synthesized. As-synthesized MoTe₂ is characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. Kelvin probe force microscopy and Raman mapping confirm that in-plane 2H-1T' MoTe₂ homojunctions have abrupt interfaces between 2H and 1T' MoTe₂ domains, possessing a potential difference of about 100 mV. It is further shown that this method can be extended to create patterned metal-semiconductor junctions in MoTe₂ in a two-step lithographic synthesis. The flux-controlled phase engineering method could be utilized for the large-scale controlled fabrication of 2D metal-semiconductor junctions for next-generation electronic and optoelectronic devices.

Emerging Low-Dimensional Materials for Nonlinear Optics and Ultrafast Photonics

Low-dimensional (LD) materials demonstrate intriguing optical properties, which lead to applications in diverse fields, such as photonics, biomedicine and energy. Due to modulation of electronic structure by the reduced structural dimensionality, LD versions of metal, semiconductor and topological insulators (TIs) at the same time bear distinct nonlinear optical (NLO) properties as compared with their bulk counterparts. Their interaction with short pulse laser excitation exhibits a strong nonlinear character manifested by NLO absorption, giving rise to optical limiting or saturated absorption associated with excited state absorption and Pauli blocking in different materials. In particular, the saturable absorption of these emerging LD materials including two-dimensional semiconductors as well as colloidal TI nanoparticles has recently been utilized for Q-switching and mode-locking ultra-short pulse generation across the visible, near infrared and middle infrared wavelength regions. Beside the large operation bandwidth, these ultrafast photonics applications are especially benefit from the high recovery rate as well as the facile processibility of these LD materials. The prominent NLO response of these LD materials have also provided new avenues for the development of novel NLO and photonics devices for all-optical control as well as optical circuits beyond ultrafast lasers.

Ternary Chalcogenide Nanosheets with Ultrahigh Photothermal Conversion Efficiency for Photoacoustic Theranostics

2D materials (TDMs) have been explored for photonic theranostics. To achieve deep-tissue penetration, near-infrared (NIR) light is essential for photoacoustic (PA) theranostics. However, because the absorption profiles of existing TDMs are generally featureless with no obvious NIR absorption peaks, their PA signals and therapeutic efficacies are limited. This paper herein reports the synthesis and application of ternary chalcogenide nanosheets (Ta₂ NiS₅ -P) for PA theranostics. In contrast to the current TDMs for such application, Ta₂ NiS₅ -P has a ternary instead of binary composition. This difference brings in the strong and featured NIR for Ta₂ NiS₅ -P. To the best of the knowledge, this is the first example using ternary chalcogenide nanosheets for such application; moreover, the photothermal conversion efficiency of Ta₂ NiS₅ -P is the highest (35%) among all the reported TDMs based on the same calculation method. These advantages allow Ta₂ NiS₅ -P to passively target, effectively delineate, and completely eradicate the tumor of living mice after systemic administration.

Circular Graphene Platelets with Grain Size and Orientation Gradients Grown by Chemical Vapor Deposition

Monolayer circular graphene platelets with a grain structure gradient in the radial direction are synthesized by chemical vapor deposition on immiscible W-Cu substrates. Because of the different interactions and growth behaviors of graphene on Cu and tungsten carbide, such substrates cause the formation of grain size and orientation gradients through the competition between Cu and tungsten carbide in graphene growth.

C3 N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties

Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possible applications. Here the authors report on the controllable large-scale synthesis of C₃ N, a 2D crystalline, hole-free extension of graphene, its structural characterization, and some of its unique properties. C₃ N is fabricated by polymerization of 2,3-diaminophenazine. It consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show a D_6h -symmetry. C₃ N is a semiconductor with an indirect bandgap of 0.39 eV that can be tuned to cover the entire visible range by fabrication of quantum dots with different diameters. Back-gated field-effect transistors made of single-layer C₃ N display an on-off current ratio reaching 5.5 × 10¹⁰ . Surprisingly, C₃ N exhibits a ferromagnetic order at low temperatures (<96 K) when doped with hydrogen. This new member of the graphene family opens the door for both fundamental basic research and possible future applications.

Nanocomposites of C3N4 with Layers of MoS2 and Nitrogenated RGO, Obtained by Covalent Cross-Linking: Synthesis, Characterization, and HER Activity

Generation of hydrogen by photochemical, electrochemical, and other means is a vital area of research today, and a variety of materials have been explored as catalysts for this purpose. C₃N₄, MoS₂, and nitrogenated RGO (NRGO) are some of the important catalytic materials investigated for the hydrogen evolution reaction (HER) reaction, but the observed catalytic activities are somewhat marginal. Prompted by preliminary reports that covalent cross-linking of 2D materials to generate heteroassemblies or nanocomposites may have beneficial effect on the catalytic activity, we have synthesized nanocomposites wherein C₃N₄ is covalently bonded to MoS₂ or NRGO nanosheets. The photochemical HER activity of the C₃N₄-MoS₂ nanocomposite is found to be remarkable with an activity of 12778 μmol h^-1 g^-1 and a turnover frequency of 2.35 h^-1. The physical mixture of C₃N₄ and MoS₂, on the other hand, does not exhibit notable catalytic activity. Encouraged by this result, we have studied electrochemical HER activity of these composites as well. C₃N₄-MoS₂ shows superior activity relative to a physical mixture of MoS₂ and C₃N₄. Density functional theory calculations have been carried out to understand the HER activity of the nanocomposites. Charge-transfer between the components and greater planarity of cross-linked layers are important causes of the superior catalytic activity of the nanocomposites. Covalent linking of such 2D materials appears to be a worthwhile strategy for catalysis and other applications.

Atomic Structure and Dynamics of Single Platinum Atom Interactions with Monolayer MoS2

We have studied atomic level interactions between single Pt atoms and the surface of monolayer MoS₂ using aberration-corrected annular dark field scanning transmission electron microscopy at an accelerating voltage of 60 kV. Strong contrast from single Pt atoms on the atomically resolved monolayer MoS₂ lattice enables their exact position to be determined with respect to the MoS₂ lattice, revealing stable binding sites. In regions of MoS₂ free from surface contamination, the Pt atoms are localized in S vacancy sites and exhibit dynamic hopping to nearby vacancy sites driven by the energy supplied by the electron beam. However, in areas of MoS₂ contaminated with carbon surface layers, the Pt atoms appear at various positions with respect to the underlying MoS₂ lattice, including on top of Mo and in off-axis positions. These variations are due to the Pt bonding with the surrounding amorphous carbon layer, which disrupts the intrinsic Pt-MoS₂ interactions, leading to more varied positions. Density functional theory (DFT) calculations reveal that Pt atoms on the surface of MoS₂ have a small barrier for migration and are stabilized when bound to either a single or double sulfur vacancies. DFT calculations have been used to understand how the catalytic activity of the MoS₂ basal plane for hydrogen evolution reaction is influenced by Pt dopants by variation of the hydrogen adsorption free energy. This strong dependence of catalytic effect on interfacial configurations is shown to be common for a series of dopants, which may provide a means to create and optimize reaction centers.

Growth of Single-Crystalline Cadmium Iodide Nanoplates, CdI2/MoS2 (WS2, WSe2) van der Waals Heterostructures, and Patterned Arrays

Two-dimensional layered materials (2DLMs) have attracted considerable recent interest for their layer-number-dependent physical and chemical properties, as well as potential technological opportunities. Here we report the synthesis of two-dimensional layered cadmium iodide (CdI₂) nanoplates using a vapor transport and deposition approach. Optical microscopy and scanning electron microscopy studies show that the resulting CdI₂ nanoplates predominantly adopt hexagonal and triangular morphologies with a lateral dimension of ∼2-10 μm. Atomic force microscopy studies show that the resulting nanoplates exhibit a thickness in the range of 5-220 nm with a relatively smooth surface. X-ray diffraction studies reveal highly crystalline CdI₂ in hexagonal phase, which is also confirmed by the characteristic Raman A_g mode at 110 cm^-1. High-resolution transmission electron microscopy and selected area electron diffraction reveal that the resulting CdI₂ nanoplates are single crystals. Taking a step further, we show the CdI₂ nanoplates were readily grown on other 2DLMs (e.g., WS₂, WSe₂, MoS₂), forming diverse van der Waals heterostructures. Using prepatterned WS₂ monolayer square arrays as the nucleation and growth templates, we also show that regular arrays of CdI₂/WS₂ vertical heterostructures can be prepared. The synthesis of the CdI₂ nanoplates, heterostructures, and heterostructure arrays offers a valuable material system for 2D materials science and technology.

Air-Stable Humidity Sensor Using Few-Layer Black Phosphorus

As a new family member of two-dimensional layered materials, black phosphorus (BP) has attracted significant attention for chemical sensing applications due to its exceptional electrical, mechanical, and surface properties. However, producing air-stable BP sensors is extremely challenging because BP atomic layers degrade rapidly in ambient conditions. In this study, we explored the humidity sensing properties of BP field-effect transistors fully encapsulated by a 6 nm-thick Al₂O₃ encapsulation layer deposited by atomic layer deposition. The encapsulated BP sensors exhibited superior ambient stability with no noticeable degradation in sensing response after being stored in air for more than a week. Compared with the bare BP devices, the encapsulated ones offered long-term stability with a trade-off in slightly reduced sensitivity. Capacitance-voltage measurement results further reveal that instead of direct charge transfer, the electrostatic gating effect on BP flakes arising from the dipole moment of adsorbed water molecules is the basic mechanism governing the humidity sensing behavior of both bare and encapsulated BP sensors. This work demonstrates a viable approach for achieving air-stable BP-based humidity or chemical sensors for practical applications.

Control of Surface and Edge Oxidation on Phosphorene

Phosphorene is emerging as an important two-dimensional semiconductor, but controlling the surface chemistry of phosphorene remains a significant challenge. Here, we show that controlled oxidation of phosphorene determines the composition and spatial distribution of the resulting oxide. We used X-ray photoemission spectroscopy to measure the binding energy shifts that accompany oxidation. We interpreted these spectra by calculating the binding energy shift for 24 likely bonding configurations, including phosphorus oxides and hydroxides located on the basal surface or edges of flakes. After brief exposure to high-purity oxygen or high-purity water vapor at room temperature, we observed phosphorus in the +1 and +2 oxidation states; longer exposures led to a large population of phosphorus in the +3 oxidation state. To provide insight into the spatial distribution of the oxide, transmission electron microscopy was performed at several stages during the oxidation. We found crucial differences between oxygen and water oxidants: while pure oxygen produced an oxide layer on the van der Waals surface, water oxidized the material at pre-existing defects such as edges or steps. We propose a mechanism based on the thermodynamics of electron transfer to interpret these observations. This work opens a route to functionalize the basal surface or edges of two-dimensional (2D) black phosphorus through site-selective chemical reactions and presents the opportunity to explore the synthesis of 2D phosphorene oxide by oxidation.

Noninvasive Scanning Raman Spectroscopy and Tomography for Graphene Membrane Characterization

Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane-based nanoelectromechanical systems (NEMS). Here, chemical-vapor-deposited graphene is transferred onto target substrates to suspend it over cavities and trenches for pressure-sensor applications. The development of such devices requires suitable metrology methods, i.e., large-scale characterization techniques, to confirm and analyze successful graphene transfer with intact suspended graphene membranes. We propose fast and noninvasive Raman spectroscopy mapping to distinguish between free-standing and substrate-supported graphene, utilizing the different strain and doping levels. The technique is expanded to combine two-dimensional area scans with cross-sectional Raman spectroscopy, resulting in three-dimensional Raman tomography of membrane-based graphene NEMS. The potential of Raman tomography for in-line monitoring is further demonstrated with a methodology for automated data analysis to spatially resolve the material composition in micrometer-scale integrated devices, including free-standing and substrate-supported graphene. Raman tomography may be applied to devices composed of other two-dimensional materials as well as silicon micro- and nanoelectromechanical systems.

Self-Assembled Three-Dimensional Graphene-Based Polyhedrons Inducing Volumetric Light Confinement

The ability to transform two-dimensional (2D) materials into a three-dimensional (3D) structure while preserving their unique inherent properties might offer great enticing opportunities in the development of diverse applications for next generation micro/nanodevices. Here, a self-assembly process is introduced for building free-standing 3D, micro/nanoscale, hollow, polyhedral structures configured with a few layers of graphene-based materials: graphene and graphene oxide. The 3D structures have been further modified with surface patterning, realized through the inclusion of metal patterns on their 3D surfaces. The 3D geometry leads to a nontrivial spatial distribution of strong electric fields (volumetric light confinement) induced by 3D plasmon hybridization on the surface of the graphene forming the 3D structures. Due to coupling in all directions, resulting in 3D plasmon hybridization, the 3D closed box graphene generates a highly confined electric field within as well as outside of the cubes. Moreover, since the uniform coupling reduces the decay of the field enhancement away from the surface, the confined electric field inside of the 3D structure shows two orders of magnitude higher than that of 2D graphene before transformation into the 3D structure. Therefore, these structures might be used for detection of target substances (not limited to only the graphene surfaces, but using the entire volume formed by the 3D graphene-based structure) in sensor applications.

Intralayered Ostwald Ripening to Ultrathin Nanomesh Catalyst with Robust Oxygen-Evolving Performance

An etching-intralayered Ostwald ripening process is proposed, which leads to the formation of a β-Ni(OH)₂ ultrathin nanomesh with abundant and uniformly distributed nanopores of 3-4 nm. The nanomesh catalyst exhibits outstanding oxygen evolution reaction performance, with high catalytic current density and superior long-term stability, making this Earth-abundant nanomesh catalyst a promising candidate for commercial water splitting.