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Meng Y, Wang W, Wang W, Li B, Zhang Y, Ho J. Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306290. [PMID: 37580311 DOI: 10.1002/adma.202306290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 07/31/2023] [Indexed: 08/16/2023]
Abstract
Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.
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Affiliation(s)
- You Meng
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Bowen Li
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Johnny Ho
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
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Zhao S, Zhao Y, Li C, Wang W, Liu HY, Cui L, Li X, Yang Z, Zhang A, Wang Y, Lin Y, Hao T, Yin J, Kang J, Zhu J. Aramid Nanodielectrics for Ultraconformal Transparent Electronic Skins. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305479. [PMID: 37705254 DOI: 10.1002/adma.202305479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 09/09/2023] [Indexed: 09/15/2023]
Abstract
On-skin electronics require minimal thicknesses and decent transparency for conformal contact, imperceptible wearing, and visual aesthetics. It is challenging to search for advanced ultrathin dielectrics capable of supporting the active components while maintaining bending softness, easy handling, and wafer-scale processability. Here, self-delaminated aramid nanodielectrics (ANDs) are demonstrated, enabling any skin-like electronics easily exfoliated from the processing substrates after complicated nanofabrication. In addition, ANDs are mechanically strong, chemically and thermally stable, transparent and breathable, therefore are ideal substrates for soft electronics. As demonstrated, compliant epidermal electrodes comprising silver nanowires and ANDs can successfully record high-quality electromyogram signals with low motion artifacts and satisfying sweat and water resistance. Furthermore, ANDs can serve as both substrates and dielectrics in single-walled carbon nanotube field-effect transistors (FETs) with a merely 160-nm thickness, which can be operated within 4 V with on/off ratios of 1.4 ± 0.5 × 105 , mobilities of 39.9 ± 2.2 cm2 V-1 s-1 , and negligible hysteresis. The ultraconformal FETs can function properly when wrapped around human hair without any degradation in performance.
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Affiliation(s)
- Sanchuan Zhao
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Yingtao Zhao
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Chenning Li
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Wei Wang
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Hai-Yang Liu
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Lei Cui
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Xiang Li
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Zhenhua Yang
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Anni Zhang
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Yurou Wang
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Yuxuan Lin
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Tailang Hao
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Jun Yin
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jian Zhu
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
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Lee C, Lee C, Lee S, Choi J, Yoo H, Im SG. A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors. Nat Commun 2023; 14:3757. [PMID: 37353504 DOI: 10.1038/s41467-023-39394-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2023] [Accepted: 06/06/2023] [Indexed: 06/25/2023] Open
Abstract
A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. In the H-MTR, a reliable transition between N-shaped transfer curves with distinct NTC and monolithically current-increasing transfer curves without apparent NTC can be accomplished through programming operation. Based on the H-MTR, a binary/ternary reconfigurable logic inverter (R-inverter) has been successfully implemented, which showed an unprecedentedly high static noise margin of 85% for binary logic operation and 59% for ternary logic operation, as well as long-term stability and outstanding cycle endurance. Furthermore, a ternary/binary dynamic logic conversion-in-memory has been demonstrated using a serially-connected R-inverter chain. The ternary/binary dynamic logic conversion-in-memory could generate three different output logic sequences for the same input signal in three logic levels, which is a new logic computing method that has never been presented before.
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Affiliation(s)
- Chungryeol Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea
| | - Changhyeon Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea
| | - Seungmin Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea
| | - Junhwan Choi
- Department of Chemical Engineering, Dankook University, 152, Jukjeon-ro, Suji-gu, Yongin, 16890, South Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Korea.
| | - Sung Gap Im
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea.
- KAIST Institute for NanoCentury (KINC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, 34141, Korea.
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Zhao Y, Chi M, Liu J, Zhai J. Asymmetric two-dimensional ferroelectric transistor with anti-ambipolar transport characteristics. DISCOVER NANO 2023; 18:83. [PMID: 37382739 DOI: 10.1186/s11671-023-03860-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 05/31/2023] [Indexed: 06/30/2023]
Abstract
Two-dimensional (2D) ferroelectric transistors hold unique properties and positions, especially talking about low-power memories, in-memory computing, and multifunctional logic devices. To achieve better functions, appropriate design of new device structures and material combinations is necessary. We present an asymmetric 2D heterostructure integrating MoTe2, h-BN, and CuInP2S6 as a ferroelectric transistor, which exhibits an unusual property of anti-ambipolar transport characteristic under both positive and negative drain biases. Our results demonstrate that the anti-ambipolar behavior can be modulated by external electric field, achieving a peak-to-valley ratio up to 103. We also provide a comprehensive explanation for the occurrence and modulation of the anti-ambipolar peak based on a model describing linked lateral-and-vertical charge behaviors. Our findings provide insights for designing and constructing anti-ambipolar transistors and other 2D devices with significant potential for future applications.
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Affiliation(s)
- Yilin Zhao
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Mengshuang Chi
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jitao Liu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China.
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China.
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5
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Wang W, Wang W, Meng Y, Quan Q, Lai Z, Li D, Xie P, Yip S, Kang X, Bu X, Chen D, Liu C, Ho JC. Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS 2 Heterojunctions. ACS NANO 2022; 16:11036-11048. [PMID: 35758898 DOI: 10.1021/acsnano.2c03673] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS2 nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 104, fast response of 50 μs, and high detectivity of 1.64 × 1011 Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.
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Affiliation(s)
- Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Quan Quan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
| | - Xiaolin Kang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Xiuming Bu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Dong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Chuntai Liu
- Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education, Zhengzhou 450002, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
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6
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Kim J, Jung M, Lim DU, Rhee D, Jung SH, Cho HK, Kim HK, Cho JH, Kang J. Area-Selective Chemical Doping on Solution-Processed MoS 2 Thin-Film for Multi-Valued Logic Gates. NANO LETTERS 2022; 22:570-577. [PMID: 34779637 DOI: 10.1021/acs.nanolett.1c02947] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Multi-valued logic gates are demonstrated on solution-processed molybdenum disulfide (MoS2) thin films. A simple chemical doping process is added to the conventional transistor fabrication procedure to locally increase the work function of MoS2 by decreasing sulfur vacancies. The resulting device exhibits pseudo-heterojunctions comprising as-processed MoS2 and chemically treated MoS2 (c-MoS2). The energy-band misalignment of MoS2 and c-MoS2 results in a sequential activation of the MoS2 and c-MoS2 channel areas under a gate voltage sweep, which generates a stable intermediate state for ternary operation. Current levels and turn-on voltages for each state can be tuned by modulating the device geometries, including the channel thickness and length. The optimized ternary transistors are incorporated to demonstrate various ternary logic gates, including the inverter, NMIN, and NMAX gates.
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Affiliation(s)
- Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Myeongjin Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dong Un Lim
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Dongjoon Rhee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Sung Hyeon Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyung Koun Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Han-Ki Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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Thakar K, Lodha S. Multi-Bit Analog Transmission Enabled by Electrostatically Reconfigurable Ambipolar and Anti-Ambipolar Transport. ACS NANO 2021; 15:19692-19701. [PMID: 34890505 DOI: 10.1021/acsnano.1c07032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Various analog applications, such as phase switching, have been demonstrated using either ambipolar or anti-ambipolar transport in two-dimensional materials. However, the availability of only one transport mode severely limits the application scope and range. This work demonstrates electrostatically reconfigurable and tunable ambipolar and anti-ambipolar transport in the same field-effect transistor using a photoactive ambipolar WSe2 channel with gate-controlled channel and Schottky barriers. This enables the realization of in-phase, out-of-phase, and double-frequency sinusoidal output signals under dark and illumination conditions. The output waveforms were used to generate phase-, frequency-, and amplitude-modulated analog schemes for 2- and 3-bit data transmission. Evaluation of all possible schemes for their power consumption, error probability, and implementation complexity highlights the importance of switching between ambipolar and anti-ambipolar modes of transport for best transmission performance. A dual-metal contact transistor with improved linearity for harmonic and excess power suppression demonstrates further performance enhancement. Generic device architecture and operation makes this work adaptable to any ambipolar material amenable to electrostatic control.
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Affiliation(s)
- Kartikey Thakar
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
| | - Saurabh Lodha
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
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Liu Y, Liu C, Qin H, Peng C, Lu M, Chen Z, Zhao Y. Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric. MEMBRANES 2021; 11:membranes11110902. [PMID: 34832130 PMCID: PMC8625031 DOI: 10.3390/membranes11110902] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/19/2021] [Revised: 11/10/2021] [Accepted: 11/12/2021] [Indexed: 11/16/2022]
Abstract
In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiNx) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in detail. The mechanism of the high-performance InGaZnO TFT with plasma-oxidized SiNx gate dielectric was also explored. The X-ray photoelectron spectroscopy (XPS) results confirmed that an oxygen-rich layer formed on the surface of the SiNx layer and the amount of oxygen vacancy near the interface between SiNx and InGaZnO layer was suppressed via pre-implanted oxygen on SiNx gate dielectric before deposition of the InGaZnO channel layer. Moreover, the conductance method was employed to directly extract the density of the interface trap (Dit) in InGaZnO TFT to verify the reduction in oxygen vacancy after plasma oxidation. The proposed InGaZnO TFT with plasma oxidation exhibited a field-effect mobility of 16.46 cm2/V·s, threshold voltage (Vth) of −0.10 V, Ion/Ioff over 108, SS of 97 mV/decade, and Vth shift of −0.37 V after NBIS. The plasma oxidation on SiNx gate dielectric provides a novel approach for suppressing the interface trap for high-performance InGaZnO TFT.
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9
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Choi YJ, Jo SB, Cho JH. Monolithic Tandem Multicolor Image Sensor Based on Electrochromic Color-Radix Demultiplexing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102725. [PMID: 34297459 DOI: 10.1002/adma.202102725] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2021] [Revised: 05/17/2021] [Indexed: 06/13/2023]
Abstract
Optical data acquisition has been set as one of the milestones to testify the developments aimed at harnessing the full potential of the spatial and temporal data processing capabilities of the advanced semiconductor technology. A highly promising approach to drive the level of acquisition beyond the current technological node is the vertical integration of multiple photodetectors. However, vertical integration so far requires the same level of circuit complexity as lateral integration from the incapability of monolithic integration. Here, an electrochromic device architecture is introduced that enables realization of a monolithic tandem multicolor photodetector. The device, composed of vertically stacked p-type and n-type graphene barristors, is demonstrated to be capable of regulating the balanced charge transport under any desired illumination wavelengths. It exhibits variable anti-ambipolar charge transport behavior, which yields sensitive voltage-controlled photoconductive gain spectra. These electrical behaviors are utilized to fabricate an optoelectronic logic sensor that can demultiplex the desired color coordinate or wavelength in the constituent array with high color accuracy.
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Affiliation(s)
- Young Jin Choi
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Korea
| | - Sae Byeok Jo
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Korea
- Nano Science and Technology Research Institute, Yonsei University, Seoul, 03722, Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Korea
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10
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Yang J, Liu Q, Hu M, Ding S, Liu J, Wang Y, Liu D, Gao H, Hu W, Dong H. Well-balanced ambipolar diketopyrrolopyrrole-based copolymers for OFETs, inverters and frequency doublers. Sci China Chem 2021. [DOI: 10.1007/s11426-021-1037-3] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
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11
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Du C, Ren Y, Qu Z, Gao L, Zhai Y, Han ST, Zhou Y. Synaptic transistors and neuromorphic systems based on carbon nano-materials. NANOSCALE 2021; 13:7498-7522. [PMID: 33928966 DOI: 10.1039/d1nr00148e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Carbon-based materials possessing a nanometer size and unique electrical properties perfectly address the two critical issues of transistors, the low power consumption and scalability, and are considered as a promising material in next-generation synaptic devices. In this review, carbon-based synaptic transistors were systematically summarized. In the carbon nanotube section, the synthesis of carbon nanotubes, purification of carbon nanotubes, the effect of architecture on the device performance and related carbon nanotube-based devices for neuromorphic computing were discussed. In the graphene section, the synthesis of graphene and its derivative, as well as graphene-based devices for neuromorphic computing, was systematically studied. Finally, the current challenges for carbon-based synaptic transistors were discussed.
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Affiliation(s)
- Chunyu Du
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yanyun Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Zhiyang Qu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Lili Gao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
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12
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Sangwan VK, Hersam MC. Neuromorphic nanoelectronic materials. NATURE NANOTECHNOLOGY 2020; 15:517-528. [PMID: 32123381 DOI: 10.1038/s41565-020-0647-z] [Citation(s) in RCA: 175] [Impact Index Per Article: 43.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2019] [Accepted: 01/23/2020] [Indexed: 05/10/2023]
Abstract
Memristive and nanoionic devices have recently emerged as leading candidates for neuromorphic computing architectures. While top-down fabrication based on conventional bulk materials has enabled many early neuromorphic devices and circuits, bottom-up approaches based on low-dimensional nanomaterials have shown novel device functionality that often better mimics a biological neuron. In addition, the chemical, structural and compositional tunability of low-dimensional nanomaterials coupled with the permutational flexibility enabled by van der Waals heterostructures offers significant opportunities for artificial neural networks. In this Review, we present a critical survey of emerging neuromorphic devices and architectures enabled by quantum dots, metal nanoparticles, polymers, nanotubes, nanowires, two-dimensional layered materials and van der Waals heterojunctions with a particular emphasis on bio-inspired device responses that are uniquely enabled by low-dimensional topology, quantum confinement and interfaces. We also provide a forward-looking perspective on the opportunities and challenges of neuromorphic nanoelectronic materials in comparison with more mature technologies based on traditional bulk electronic materials.
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Affiliation(s)
- Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
- Department of Chemistry, Northwestern University, Evanston, IL, USA.
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA.
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13
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Beck ME, Hersam MC. Emerging Opportunities for Electrostatic Control in Atomically Thin Devices. ACS NANO 2020; 14:6498-6518. [PMID: 32463222 DOI: 10.1021/acsnano.0c03299] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.
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Affiliation(s)
- Megan E Beck
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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14
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Wu G, Wang X, Chen Y, Wu S, Wu B, Jiang Y, Shen H, Lin T, Liu Q, Wang X, Zhou P, Zhang S, Hu W, Meng X, Chu J, Wang J. MoTe 2 p-n Homojunctions Defined by Ferroelectric Polarization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907937. [PMID: 32104952 DOI: 10.1002/adma.201907937] [Citation(s) in RCA: 49] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2019] [Revised: 01/14/2020] [Indexed: 05/16/2023]
Abstract
Doped p-n junctions are fundamental electrical components in modern electronics and optoelectronics. Due to the development of device miniaturization, the emergence of two-dimensional (2D) materials may initiate the next technological leap toward the post-Moore era owing to their unique structures and physical properties. The purpose of fabricating 2D p-n junctions has fueled many carrier-type modulation methods, such as electrostatic doping, surface modification, and element intercalation. Here, by using the nonvolatile ferroelectric field polarized in the opposite direction, efficient carrier modulation in ambipolar molybdenum telluride (MoTe2 ) to form a p-n homojunction at the domain wall is demonstrated. The nonvolatile MoTe2 p-n junction can be converted to n-p, n-n, and p-p configurations by external gate voltage pulses. Both rectifier diodes exhibited excellent rectifying characteristics with a current on/off ratio of 5 × 105 . As a photodetector/photovoltaic, the device presents responsivity of 5 A W-1 , external quantum efficiency of 40%, specific detectivity of 3 × 1012 Jones, fast response time of 30 µs, and power conversion efficiency of 2.5% without any bias or gate voltages. The MoTe2 p-n junction presents an obvious short-wavelength infrared photoresponse at room temperature, complementing the current infrared photodetectors with the inadequacies of complementary metal-oxide-semiconductor incompatibility and cryogenic operation temperature.
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Affiliation(s)
- Guangjian Wu
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Yan Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Shuaiqin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Binmin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Yiyang Jiang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Qi Liu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Xinran Wang
- School of Electronic Science and Engineering, Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing, 210093, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 220 Handan Road, Shanghai, 200433, China
| | - Shantao Zhang
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Junhao Chu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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15
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Spiking neurons from tunable Gaussian heterojunction transistors. Nat Commun 2020; 11:1565. [PMID: 32218433 PMCID: PMC7099079 DOI: 10.1038/s41467-020-15378-7] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/20/2019] [Accepted: 03/03/2020] [Indexed: 11/16/2022] Open
Abstract
Spiking neural networks exploit spatiotemporal processing, spiking sparsity, and high interneuron bandwidth to maximize the energy efficiency of neuromorphic computing. While conventional silicon-based technology can be used in this context, the resulting neuron-synapse circuits require multiple transistors and complicated layouts that limit integration density. Here, we demonstrate unprecedented electrostatic control of dual-gated Gaussian heterojunction transistors for simplified spiking neuron implementation. These devices employ wafer-scale mixed-dimensional van der Waals heterojunctions consisting of chemical vapor deposited monolayer molybdenum disulfide and solution-processed semiconducting single-walled carbon nanotubes to emulate the spike-generating ion channels in biological neurons. Circuits based on these dual-gated Gaussian devices enable a variety of biological spiking responses including phasic spiking, delayed spiking, and tonic bursting. In addition to neuromorphic computing, the tunable Gaussian response has significant implications for a range of other applications including telecommunications, computer vision, and natural language processing. Designing high performance, scalable, and energy efficient spiking neural networks remains a challenge. Here, the authors utilize mixed-dimensional dual-gated Gaussian heterojunction transistors from single-walled carbon nanotubes and monolayer MoS2 to realize simplified spiking neuron circuits.
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16
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Li S, Zhong C, Henning A, Sangwan VK, Zhou Q, Liu X, Rahn MS, Wells SA, Park HY, Luxa J, Sofer Z, Facchetti A, Darancet P, Marks TJ, Lauhon LJ, Weiss EA, Hersam MC. Molecular-Scale Characterization of Photoinduced Charge Separation in Mixed-Dimensional InSe-Organic van der Waals Heterostructures. ACS NANO 2020; 14:3509-3518. [PMID: 32078300 DOI: 10.1021/acsnano.9b09661] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Layered indium selenide (InSe) is an emerging two-dimensional semiconductor that has shown significant promise for high-performance transistors and photodetectors. The range of optoelectronic applications for InSe can potentially be broadened by forming mixed-dimensional van der Waals heterostructures with zero-dimensional molecular systems that are widely employed in organic electronics and photovoltaics. Here, we report the spatially resolved investigation of photoinduced charge separation between InSe and two molecules (C70 and C8-BTBT) using scanning tunneling microscopy combined with laser illumination. We experimentally and computationally show that InSe forms type-II and type-I heterojunctions with C70 and C8-BTBT, respectively, due to an interplay of charge transfer and dielectric screening at the interface. Laser-excited scanning tunneling spectroscopy reveals a ∼0.25 eV decrease in the energy of the lowest unoccupied molecular orbital of C70 with optical illumination. Furthermore, photoluminescence spectroscopy and Kelvin probe force microscopy indicate that electron transfer from InSe to C70 in the type-II heterojunction induces a photovoltage that quantitatively matches the observed downshift in the tunneling spectra. In contrast, no significant changes are observed upon optical illumination in the type-I heterojunction formed between InSe and C8-BTBT. Density functional theory calculations further show that, despite the weak coupling between the molecular species and InSe, the band alignment of these mixed-dimensional heterostructures strongly differs from the one suggested by the ionization potential and electronic affinities of the isolated components. Self-energy-corrected density functional theory indicates that these effects are the result of the combination of charge redistribution at the interface and heterogeneous dielectric screening of the electron-electron interactions in the heterostructure. In addition to providing specific insight for mixed-dimensional InSe-organic van der Waals heterostructures, this work establishes a general experimental methodology for studying localized charge transfer at the molecular scale that is applicable to other photoactive nanoscale systems.
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Affiliation(s)
- Shaowei Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Chengmei Zhong
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Alex Henning
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Qunfei Zhou
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Northwestern Argonne Institute for Science and Engineering, Evanston, Illinois 60208, United States
| | - Xiaolong Liu
- Applied Physics Graduate Program, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Matthew S Rahn
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Spencer A Wells
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Hong Youl Park
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Jan Luxa
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Antonio Facchetti
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Pierre Darancet
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Northwestern Argonne Institute for Science and Engineering, Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Emily A Weiss
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
- Applied Physics Graduate Program, Northwestern University, Evanston, Illinois 60208-3113, United States
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17
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Yoo H, On S, Lee SB, Cho K, Kim JJ. Negative Transconductance Heterojunction Organic Transistors and their Application to Full-Swing Ternary Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1808265. [PMID: 31116897 DOI: 10.1002/adma.201808265] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2018] [Revised: 04/28/2019] [Indexed: 06/09/2023]
Abstract
Multivalued logic (MVL) computing could provide bit density beyond that of Boolean logic. Unlike conventional transistors, heterojunction transistors (H-TRs) exhibit negative transconductance (NTC) regions. Using the NTC characteristics of H-TRs, ternary inverters have recently been demonstrated. However, they have shown incomplete inverter characteristics; the output voltage (VOUT ) does not fully swing from VDD to GND . A new H-TR device structure that consists of a dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) layer stacked on a PTCDI-C13 layer is presented. Due to the continuous DNTT layer from source to drain, the proposed device exhibits novel switching behavior: p-type off/p-type subthreshold region /NTC/ p-type on. As a result, it has a very high on/off current ratio (≈105 ) and exhibits NTC behavior. It is also demonstrated that an array of 36 of these H-TRs have 100% yield, a uniform on/off current ratio, and uniform NTC characteristics. Furthermore, the proposed ternary inverter exhibits full VDD -to-GND swing of VOUT with three distinct logic states. The proposed transistors and inverters exhibit hysteresis-free operation due to the use of a hydrophobic gate dielectric and encapsulating layers. Based on this, the transient operation of a ternary inverter circuit is demonstrated for the first time.
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Affiliation(s)
- Hocheon Yoo
- Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea
| | - Sungmin On
- Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea
| | - Seon Baek Lee
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea
| | - Kilwon Cho
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea
| | - Jae-Joon Kim
- Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea
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18
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Cheng R, Yin L, Wang F, Wang Z, Wang J, Wen Y, Huang W, Sendeku MG, Feng L, Liu Y, He J. Anti-Ambipolar Transport with Large Electrical Modulation in 2D Heterostructured Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1901144. [PMID: 30998266 DOI: 10.1002/adma.201901144] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2019] [Revised: 03/29/2019] [Indexed: 06/09/2023]
Abstract
Van der Waals materials and their heterostructures provide a versatile platform to explore new device architectures and functionalities beyond conventional semiconductors. Of particular interest is anti-ambipolar behavior, which holds potentials for various digital electronic applications. However, most of the previously conducted studies are focused on hetero- or homo- p-n junctions, which suffer from a weak electrical modulation. Here, the anti-ambipolar transport behavior and negative transconductance of MoTe2 transistors are reported using a graphene/h-BN floating-gate structure to dynamically modulate the conduction polarity. Due to the asymmetric electrical field regulating effect on the recombination and diffusion currents, the anti-ambipolar transport and negative transconductance feature can be systematically controlled. Consequently, the device shows an unprecedented peak resistance modulation factor (≈5 × 103 ), and effective photoexcitation modulation with distinct threshold voltage shift and large photo on/off ratio (≈104 ). Utilizing this large modulation effect, the voltage-transfer characteristics of an inverter circuit variant are further studied and its applications in Schmitt triggers and multivalue output are further explored. These properties, in addition to their proven nonvolatile storage, suggest that such 2D heterostructured devices display promising perspectives toward future logic applications.
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Affiliation(s)
- Ruiqing Cheng
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Lei Yin
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Feng Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Zhenxing Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Junjun Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yao Wen
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Wenhao Huang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Marshet Getaye Sendeku
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Liping Feng
- State Key Laboratory of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Yufang Liu
- College of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, P. R. China
| | - Jun He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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19
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Wu E, Xie Y, Liu Q, Hu X, Liu J, Zhang D, Zhou C. Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe 2/MoS 2 Heterotransistors. ACS NANO 2019; 13:5430-5438. [PMID: 30974935 DOI: 10.1021/acsnano.9b00201] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
van der Waals (vdW) p-n heterojunctions formed by two-dimensional nanomaterials exhibit many physical properties and deliver functionalities to enable future electronic and optoelectronic devices. In this report, we demonstrate a tunable and high-performance anti-ambipolar transistor based on MoTe2/MoS2 heterojunction through in situ photoinduced doping. The device demonstrates a high on/off ratio of 105 with a large on-state current of several micro-amps. The peak position of the drain-source current in the transfer curve can be adjusted through the doping level across a large dynamic range. In addition, we have fabricated a tunable multivalue inverter based on the heterojunction that demonstrates precise control over its output logic states and window of midlogic through source-drain bias adjustment. The heterojunction also exhibits excellent photodetection and photovoltaic performances. Dynamic and precise modulation of the anti-ambipolar transport properties may inspire functional devices and applications of two-dimensional nanomaterials and their heterostructures of various kinds.
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Affiliation(s)
- Enxiu Wu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering , Tianjin University , No. 92 Weijin Road , Tianjin , 300072 , China
| | - Yuan Xie
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering , Tianjin University , No. 92 Weijin Road , Tianjin , 300072 , China
| | - Qingzhou Liu
- Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States
| | - Xiaodong Hu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering , Tianjin University , No. 92 Weijin Road , Tianjin , 300072 , China
| | - Jing Liu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering , Tianjin University , No. 92 Weijin Road , Tianjin , 300072 , China
| | - Daihua Zhang
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering , Tianjin University , No. 92 Weijin Road , Tianjin , 300072 , China
| | - Chongwu Zhou
- Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States
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20
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Wu D, Li W, Rai A, Wu X, Movva HCP, Yogeesh MN, Chu Z, Banerjee SK, Akinwande D, Lai K. Visualization of Local Conductance in MoS 2/WSe 2 Heterostructure Transistors. NANO LETTERS 2019; 19:1976-1981. [PMID: 30779591 DOI: 10.1021/acs.nanolett.8b05159] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing antiambipolar effect in their transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2-heterostructure-WSe2. Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research.
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Affiliation(s)
- Di Wu
- Department of Physics , The University of Texas at Austin , Austin , Texas 78712 , United States
| | - Wei Li
- Microelectronics Research Center, Department of Electrical and Computer Engineering , The University of Texas at Austin , Austin , Texas 78758 , United States
| | - Amritesh Rai
- Microelectronics Research Center, Department of Electrical and Computer Engineering , The University of Texas at Austin , Austin , Texas 78758 , United States
| | - Xiaoyu Wu
- Department of Physics , The University of Texas at Austin , Austin , Texas 78712 , United States
| | - Hema C P Movva
- Microelectronics Research Center, Department of Electrical and Computer Engineering , The University of Texas at Austin , Austin , Texas 78758 , United States
| | - Maruthi N Yogeesh
- Microelectronics Research Center, Department of Electrical and Computer Engineering , The University of Texas at Austin , Austin , Texas 78758 , United States
| | - Zhaodong Chu
- Department of Physics , The University of Texas at Austin , Austin , Texas 78712 , United States
| | - Sanjay K Banerjee
- Microelectronics Research Center, Department of Electrical and Computer Engineering , The University of Texas at Austin , Austin , Texas 78758 , United States
| | - Deji Akinwande
- Microelectronics Research Center, Department of Electrical and Computer Engineering , The University of Texas at Austin , Austin , Texas 78758 , United States
| | - Keji Lai
- Department of Physics , The University of Texas at Austin , Austin , Texas 78712 , United States
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21
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Sharma BK, Stoesser A, Mondal SK, Garlapati SK, Fawey MH, Chakravadhanula VSK, Kruk R, Hahn H, Dasgupta S. High-Performance All-Printed Amorphous Oxide FETs and Logics with Electronically Compatible Electrode/Channel Interface. ACS APPLIED MATERIALS & INTERFACES 2018; 10:22408-22418. [PMID: 29893115 DOI: 10.1021/acsami.8b04892] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes, and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO)-based-diffused a-IGZO-ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping-mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS-based logic circuits have also been demonstrated toward new-generation portable electronics.
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Affiliation(s)
- Bhupendra K Sharma
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
| | - Anna Stoesser
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
| | | | - Suresh Kumar Garlapati
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
| | - Mohammed H Fawey
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
- Joint Research Laboratory Nanomaterials at Technische Universität Darmstadt (TUD) , 64287 Darmstadt , Germany
| | | | - Robert Kruk
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
| | - Horst Hahn
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
- Joint Research Laboratory Nanomaterials at Technische Universität Darmstadt (TUD) , 64287 Darmstadt , Germany
| | - Subho Dasgupta
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
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22
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Ting JM, Wu H, Herzog-Arbeitman A, Srivastava S, Tirrell MV. Synthesis and Assembly of Designer Styrenic Diblock Polyelectrolytes. ACS Macro Lett 2018; 7:726-733. [PMID: 35632955 DOI: 10.1021/acsmacrolett.8b00346] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/02/2023]
Abstract
Harnessing molecular design principles toward functional applications of ion-containing macromolecules relies on diversifying experimental data sets of well-understood materials. Here, we report a simple, tunable framework for preparing styrenic polyelectrolytes, using aqueous reversible addition-fragmentation chain transfer (RAFT) polymerization in a parallel synthesis approach. A series of diblock polycations and polyanions were RAFT chain-extended from poly(ethylene oxide) (PEO) using (vinylbenzyl)trimethylammonium chloride (PEO-b-PVBTMA) and sodium 4-styrenesulfonate (PEO-b-PSS), with varying neutral PEO block lengths, charged styrenic block lengths, and RAFT end-group identity. The materials characterization and kinetics study of chain growth exhibited control of the molar mass distribution for both systems. These block polyelectrolytes were also demonstrated to form polyelectrolyte complex (PEC) driven self-assemblies. We present two simple outcomes of micellization to show the importance of polymer selection from a broadened pool of polyelectrolyte candidates: (i) uniform PEC-core micelles comprising PEO-b-PVBTMA and poly(acrylic acid) and (ii) PEC nanoaggregates comprising PEO-b-PVBTMA and PEO-b-PSS. The materials characteristics of these charged assemblies were investigated with dynamic light scattering, small-angle X-ray scattering, and cryogenic-transmission electron microscopy imaging. This model synthetic platform offers a straightforward path to expand the design space of conventional polyelectrolytes into gram-scale block polymer structures, which can ultimately enable the development of more sophisticated ionic materials into technology.
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Affiliation(s)
- Jeffrey M. Ting
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Hao Wu
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | | | - Samanvaya Srivastava
- Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Matthew V. Tirrell
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Argonne National Laboratory, Lemont, Illinois 60439, United States
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23
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Chen Y, Sun Y, Zhu Q, Wang B, Yan X, Qiu S, Li Q, Hou P, Liu C, Sun D, Cheng H. High-Throughput Fabrication of Flexible and Transparent All-Carbon Nanotube Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1700965. [PMID: 29876218 PMCID: PMC5979759 DOI: 10.1002/advs.201700965] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2017] [Revised: 01/15/2018] [Indexed: 05/22/2023]
Abstract
This study reports a simple and effective technique for the high-throughput fabrication of flexible all-carbon nanotube (CNT) electronics using a photosensitive dry film instead of traditional liquid photoresists. A 10 in. sized photosensitive dry film is laminated onto a flexible substrate by a roll-to-roll technology, and a 5 µm pattern resolution of the resulting CNT films is achieved for the construction of flexible and transparent all-CNT thin-film transistors (TFTs) and integrated circuits. The fabricated TFTs exhibit a desirable electrical performance including an on-off current ratio of more than 105, a carrier mobility of 33 cm2 V-1 s-1, and a small hysteresis. The standard deviations of on-current and mobility are, respectively, 5% and 2% of the average value, demonstrating the excellent reproducibility and uniformity of the devices, which allows constructing a large noise margin inverter circuit with a voltage gain of 30. This study indicates that a photosensitive dry film is very promising for the low-cost, fast, reliable, and scalable fabrication of flexible and transparent CNT-based integrated circuits, and opens up opportunities for future high-throughput CNT-based printed electronics.
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Affiliation(s)
- Yong‐Yang Chen
- College of Information Science and EngineeringNortheastern University3‐11 Wenhua RoadShenyang110819China
| | - Yun Sun
- Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of Sciences72 Wenhua RoadShenyang110016China
| | - Qian‐Bing Zhu
- Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of Sciences72 Wenhua RoadShenyang110016China
- School of Material Science and EngineeringUniversity of Science and Technology of China96 Jinzhai RoadHefei230026China
| | - Bing‐Wei Wang
- Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of Sciences72 Wenhua RoadShenyang110016China
- School of Material Science and EngineeringUniversity of Science and Technology of China96 Jinzhai RoadHefei230026China
- University of Chinese Academy of Sciences19 A Yuquan RoadBeijing100049China
| | - Xin Yan
- College of Information Science and EngineeringNortheastern University3‐11 Wenhua RoadShenyang110819China
| | - Song Qiu
- Suzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of Sciences398 Ruoshui RoadSuzhou215123China
| | - Qing‐Wen Li
- Suzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of Sciences398 Ruoshui RoadSuzhou215123China
| | - Peng‐Xiang Hou
- Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of Sciences72 Wenhua RoadShenyang110016China
| | - Chang Liu
- Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of Sciences72 Wenhua RoadShenyang110016China
- School of Material Science and EngineeringUniversity of Science and Technology of China96 Jinzhai RoadHefei230026China
| | - Dong‐Ming Sun
- Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of Sciences72 Wenhua RoadShenyang110016China
- School of Material Science and EngineeringUniversity of Science and Technology of China96 Jinzhai RoadHefei230026China
| | - Hui‐Ming Cheng
- Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of Sciences72 Wenhua RoadShenyang110016China
- School of Material Science and EngineeringUniversity of Science and Technology of China96 Jinzhai RoadHefei230026China
- Tsinghua‐Berkeley Shenzhen InstituteTsinghua University1001 Xueyuan RoadShenzhen518055China
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24
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Affiliation(s)
- Vinod K. Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
| | - Mark C. Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
- Department of Chemistry and Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA
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25
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Sangwan VK, Beck ME, Henning A, Luo J, Bergeron H, Kang J, Balla I, Inbar H, Lauhon LJ, Hersam MC. Self-Aligned van der Waals Heterojunction Diodes and Transistors. NANO LETTERS 2018; 18:1421-1427. [PMID: 29385342 DOI: 10.1021/acs.nanolett.7b05177] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.
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Affiliation(s)
- Vinod K Sangwan
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Megan E Beck
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Alex Henning
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Jiajia Luo
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Hadallia Bergeron
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Junmo Kang
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Itamar Balla
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Hadass Inbar
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
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26
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Zhang J, Zhang K, Xia B, Wei Y, Li D, Zhang K, Zhang Z, Wu Y, Liu P, Duan X, Xu Y, Duan W, Fan S, Jiang K. Carbon-Nanotube-Confined Vertical Heterostructures with Asymmetric Contacts. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1702942. [PMID: 28833598 DOI: 10.1002/adma.201702942] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2017] [Revised: 07/13/2017] [Indexed: 06/07/2023]
Abstract
Van der Waals (vdW) heterostructures have received intense attention for their efficient stacking methodology with 2D nanomaterials in vertical dimension. However, it is still a challenge to scale down the lateral size of vdW heterostructures to the nanometer and make proper contacts to achieve optimized performances. Here, a carbon-nanotube-confined vertical heterostructure (CCVH) is employed to address this challenge, in which 2D semiconductors are asymmetrically sandwiched by an individual metallic single-walled carbon nanotube (SWCNT) and a metal electrode. By using WSe2 and MoS2 , the CCVH can be made into p-type and n-type field effect transistors with high on/off ratios even when the channel length is 3.3 nm. A complementary inverter was further built with them, indicating their potential in logic circuits with a high integration level. Furthermore, the Fermi level of SWCNTs can be efficiently modulated by the gate voltage, making it competent for both electron and hole injection in the CCVHs. This unique property is shown by the transition of WSe2 CCVH from unipolar to bipolar, and the transition of WSe2 /MoS2 from p-n junction to n-n junction under proper source-drain biases and gate voltages. Therefore, the CCVH, as a member of 1D/2D mixed heterostructures, shows great potentials in future nanoelectronics and nano-optoelectronics.
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Affiliation(s)
- Jin Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Kenan Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Bingyu Xia
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Yang Wei
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Dongqi Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Ke Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Zhixing Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Yang Wu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Peng Liu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Xidong Duan
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Yong Xu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, 351-0198, Japan
| | - Wenhui Duan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China
| | - Kaili Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China
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27
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Liu Y, Guo J, He Q, Wu H, Cheng HC, Ding M, Shakir I, Gambin V, Huang Y, Duan X. Vertical Charge Transport and Negative Transconductance in Multilayer Molybdenum Disulfides. NANO LETTERS 2017; 17:5495-5501. [PMID: 28823157 DOI: 10.1021/acs.nanolett.7b02161] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Negative transconductance (NTC) devices have been heavily investigated for their potential in low power logical circuit, memory, oscillating, and high-speed switching applications. Previous NTC devices are largely attributed to two working mechanisms: quantum mechanical tunneling, and mobility degradation at high electrical field. Herein we report a systematic investigation of charge transport in multilayer two-dimensional semiconductors (2DSCs) with optimized van der Waals contact and for the first time demonstrate NTC and antibipolar characteristics in multilayer 2DSCs (such as MoS2, WSe2). By varying the measurement temperature, bias voltage, and body thickness, we found the NTC behavior can be attributed to a vertical potential barrier in the multilayer 2DSCs and the competing mechanisms between intralayer lateral transport and interlayer vertical transport, thus representing a new working mechanism for NTC operation. Importantly, this vertical potential barrier arises from inhomogeneous carrier distribution in 2DSC from the near-substrate region to the bulk region, which is in contrast to conventional semiconductors with homogeneous doping defined by bulk dopants. We further show that the unique NTC behavior can be explored for creating frequency doublers and phase shift keying circuits with only one transistor, greatly simplifying the circuit design compared to conventional technology.
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Affiliation(s)
- Yuan Liu
- Department of Materials Science and Engineering, University of California , Los Angeles, California 90095, United States
| | - Jian Guo
- Department of Materials Science and Engineering, University of California , Los Angeles, California 90095, United States
| | - Qiyuan He
- Department of Chemistry and Biochemistry, University of California , Los Angeles, California 90095, United States
| | - Hao Wu
- Department of Materials Science and Engineering, University of California , Los Angeles, California 90095, United States
| | - Hung-Chieh Cheng
- Department of Materials Science and Engineering, University of California , Los Angeles, California 90095, United States
| | - Mengning Ding
- Department of Materials Science and Engineering, University of California , Los Angeles, California 90095, United States
| | - Imran Shakir
- Sustainable Energy Technologies Centre, College of Engineering, King Saud University , Riyadh 11421, Kingdom of Saudi Arabia
| | - Vincent Gambin
- NG/NEXT, Northrop Grumman Corporation, Redondo Beach, California 90278, United States
| | - Yu Huang
- Department of Materials Science and Engineering, University of California , Los Angeles, California 90095, United States
- California Nanosystems Institute, University of California , Los Angeles, California 90095, United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California , Los Angeles, California 90095, United States
- California Nanosystems Institute, University of California , Los Angeles, California 90095, United States
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28
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Dong J, Liu F, Wang F, Wang J, Li M, Wen Y, Wang L, Wang G, He J, Jiang C. Configuration-dependent anti-ambipolar van der Waals p-n heterostructures based on pentacene single crystal and MoS 2. NANOSCALE 2017; 9:7519-7525. [PMID: 28534906 DOI: 10.1039/c7nr01822c] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Recently, van der Waals heterostructures (vdWHs) have trigged intensive interest due to their novel electronic and optoelectronic properties. The vdWHs could be achieved by stacking two dimensional layered materials (2DLMs) on top of another and vertically kept by van der Waals forces. Furthermore, organic semiconductors are also known to interact via van der Waals forces, which offer an alternative for the fabrication of organic-inorganic p-n vdWHs. However, the performances of organic-inorganic p-n vdWHs produced so far are rather poor, owing to the unmatched electrical property between the 2DLMs and organic polycrystalline films. To make improvements in such novel heterostructure architectures, here we adopt high quality organic single crystals instead of polycrystalline films to construct a pentacene/MoS2 p-n vdWH. The vdWHs show a much higher current density and better anti-ambipolar characteristics with a highest transconductance of 211 nS. Moreover, device configuration-dependent transfer characteristics are demonstrated and a mechanism of a gate bias modulated vertical space charge zone existing at the vertical p-n vdWHs interface is proposed. These findings provide a new route to optimize the organic-inorganic p-n vdWHs and a guideline for studying the intrinsic properties of vdWHs.
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Affiliation(s)
- Ji Dong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, 100190, People's Republic of China
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29
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Zhao Y, Xiao X, Huo Y, Wang Y, Zhang T, Jiang K, Wang J, Fan S, Li Q. Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode. ACS APPLIED MATERIALS & INTERFACES 2017; 9:18945-18955. [PMID: 28505402 DOI: 10.1021/acsami.7b04076] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We have fabricated carbon nanotube and MoS2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (ΦSB) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the ΦSB for both contact forms of CNT and MoS2 devices; we found that the ΦSB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 104; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.
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Affiliation(s)
- Yudan Zhao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Xiaoyang Xiao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Yujia Huo
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Yingcheng Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Tianfu Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Kaili Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Jiaping Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Qunqing Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
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30
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Xia W, Dai L, Yu P, Tong X, Song W, Zhang G, Wang Z. Recent progress in van der Waals heterojunctions. NANOSCALE 2017; 9:4324-4365. [PMID: 28317972 DOI: 10.1039/c7nr00844a] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Following the development of many novel two-dimensional (2D) materials, investigations of van der Waals heterojunctions (vdWHs) have attracted significant attention due to their excellent properties such as smooth heterointerface, highly gate-tunable bandgap, and ultrafast carrier transport. Benefits from the atom-scale thickness, physical and chemical properties and ease of manipulation of the heterojunctions formulated by weak vdW forces were demonstrated to indicate their outstanding potential in electronic and optoelectronic applications, including photodetection and energy harvesting, and the possibility of integrating them with the existing semiconductor technology for the next-generation electronic and sensing devices. In this review, we summarized the recent developments of vdWHs and emphasized their applications. Basically, we introduced the physical properties and some newly discovered phenomena in vdWHs. Then, we emphatically presented four classical vdWHs and some novel heterostructures formed by vdW forces. Based on their unique physical properties and structures, we highlighted the applications of vdWHs including in photodiodes, phototransistors, tunneling devices, and memory devices. Finally, we provided a conclusion on the recent advances in vdWHs and outlined our perspectives. We aim for this review to serve as a solid foundation in this field and to pave the way for future research on vdW-based materials and their heterostructures.
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Affiliation(s)
- Wanshun Xia
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China. and Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Liping Dai
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China.
| | - Peng Yu
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Xin Tong
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Wenping Song
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China.
| | - Guojun Zhang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China.
| | - Zhiming Wang
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
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31
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Jariwala D, Marks TJ, Hersam MC. Mixed-dimensional van der Waals heterostructures. NATURE MATERIALS 2017; 16:170-181. [PMID: 27479211 DOI: 10.1038/nmat4703] [Citation(s) in RCA: 541] [Impact Index Per Article: 77.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2016] [Accepted: 06/21/2016] [Indexed: 05/18/2023]
Abstract
The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given that any passivated, dangling-bond-free surface will interact with another through vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through non-covalent interactions. We present a succinct and critical survey of emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices. By comparing and contrasting with all-2D vdW heterostructures as well as with competing conventional technologies, we highlight the challenges and opportunities for mixed-dimensional vdW heterostructures.
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Affiliation(s)
- Deep Jariwala
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
| | - Tobin J Marks
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
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32
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Bettis Homan S, Sangwan VK, Balla I, Bergeron H, Weiss EA, Hersam MC. Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene-MoS 2 van der Waals Heterojunction. NANO LETTERS 2017; 17:164-169. [PMID: 28073273 DOI: 10.1021/acs.nanolett.6b03704] [Citation(s) in RCA: 105] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
van der Waals heterojunctions between two-dimensional (2D) layered materials and nanomaterials of different dimensions present unique opportunities for gate-tunable optoelectronic devices. Mixed-dimensional p-n heterojunction diodes, such as p-type pentacene (0D) and n-type monolayer MoS2 (2D), are especially interesting for photovoltaic applications where the absorption cross-section and charge transfer processes can be tailored by rational selection from the vast library of organic molecules and 2D materials. Here, we study the kinetics of excited carriers in pentacene-MoS2 p-n type-II heterojunctions by transient absorption spectroscopy. These measurements show that the dissociation of MoS2 excitons occurs by hole transfer to pentacene on the time scale of 6.7 ps. In addition, the charge-separated state lives for 5.1 ns, up to an order of magnitude longer than the recombination lifetimes from previously reported 2D material heterojunctions. By studying the fractional amplitudes of the MoS2 decay processes, the hole transfer yield from MoS2 to pentacene is found to be ∼50%, with the remaining holes undergoing trapping due to surface defects. Overall, the ultrafast charge transfer and long-lived charge-separated state in pentacene-MoS2 p-n heterojunctions suggest significant promise for mixed-dimensional van der Waals heterostructures in photovoltaics, photodetectors, and related optoelectronic technologies.
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Affiliation(s)
- Stephanie Bettis Homan
- Department of Chemistry and ‡Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Vinod K Sangwan
- Department of Chemistry and ‡Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Itamar Balla
- Department of Chemistry and ‡Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Hadallia Bergeron
- Department of Chemistry and ‡Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Emily A Weiss
- Department of Chemistry and ‡Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Chemistry and ‡Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
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Zhu J, Hersam MC. Assembly and Electronic Applications of Colloidal Nanomaterials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1603895. [PMID: 27862354 DOI: 10.1002/adma.201603895] [Citation(s) in RCA: 36] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2016] [Revised: 09/01/2016] [Indexed: 06/06/2023]
Abstract
Artificial solids and thin films assembled from colloidal nanomaterials give rise to versatile properties that can be exploited in a range of technologies. In particular, solution-based processes allow for the large-scale and low-cost production of nanoelectronics on rigid or mechanically flexible substrates. To achieve this goal, several processing steps require careful consideration, including nanomaterial synthesis or exfoliation, purification, separation, assembly, hybrid integration, and device testing. Using a ubiquitous electronic device - the field-effect transistor - as a platform, colloidal nanomaterials in three electronic material categories are reviewed systematically: semiconductors, conductors, and dielectrics. The resulting comparative analysis reveals promising opportunities and remaining challenges for colloidal nanomaterials in electronic applications, thereby providing a roadmap for future research and development.
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Affiliation(s)
- Jian Zhu
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois, 60208-3108, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois, 60208-3108, USA
- Graduate Program in Applied Physics, Department of Chemistry, Department of Medicine, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL, 60208-3108, USA
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Kim JK, Cho K, Kim TY, Pak J, Jang J, Song Y, Kim Y, Choi BY, Chung S, Hong WK, Lee T. Trap-mediated electronic transport properties of gate-tunable pentacene/MoS 2 p-n heterojunction diodes. Sci Rep 2016; 6:36775. [PMID: 27829663 PMCID: PMC5103186 DOI: 10.1038/srep36775] [Citation(s) in RCA: 47] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/03/2016] [Accepted: 10/21/2016] [Indexed: 12/12/2022] Open
Abstract
We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.
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Affiliation(s)
- Jae-Keun Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Kyungjune Cho
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Tae-Young Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Jinsu Pak
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Jingon Jang
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Younggul Song
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Youngrok Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Barbara Yuri Choi
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Seungjun Chung
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Woong-Ki Hong
- Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Korea
| | - Takhee Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
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35
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Wang Z, He X, Zhang XX, Alshareef HN. Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:9133-9141. [PMID: 27571871 DOI: 10.1002/adma.201602157] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2016] [Revised: 06/29/2016] [Indexed: 06/06/2023]
Abstract
A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 104 . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.
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Affiliation(s)
- Zhenwei Wang
- Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xin He
- Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xi-Xiang Zhang
- Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
| | - Husam N Alshareef
- Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
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36
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Van Der Waals Heterostructures between Small Organic Molecules and Layered Substrates. CRYSTALS 2016. [DOI: 10.3390/cryst6090113] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
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Secor EB, Smith J, Marks TJ, Hersam MC. High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes. ACS APPLIED MATERIALS & INTERFACES 2016; 8:17428-17434. [PMID: 27327555 DOI: 10.1021/acsami.6b02730] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm(2)/V·s and current on/off ratio of ∼10(5). The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.
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Affiliation(s)
- Ethan B Secor
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University , Evanston, Illinois 60208, United States
| | - Jeremy Smith
- Department of Chemistry and the Materials Research Center, Northwestern University , Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University , Evanston, Illinois 60208, United States
- Department of Chemistry and the Materials Research Center, Northwestern University , Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University , Evanston, Illinois 60208, United States
- Department of Chemistry and the Materials Research Center, Northwestern University , Evanston, Illinois 60208, United States
- Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
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38
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Li Y, Wang Y, Huang L, Wang X, Li X, Deng HX, Wei Z, Li J. Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides. ACS APPLIED MATERIALS & INTERFACES 2016; 8:15574-15581. [PMID: 27258569 DOI: 10.1021/acsami.6b02513] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Two-dimensional (2D) materials and their related van der Waals heterostructures have attracted considerable interest for their fascinating new properties. There are still many challenges in realizing the potential of 2D semiconductors in practical (opto)electronics such as signal transmission and logic circuit, etc. Herein, we report the gate-tunable anti-ambipolar devices on the basis of few-layer transition metal dichalcogenides (TMDs) heterostructures to gain higher information storage density. Our study shows that carrier concentration regulated by the gate voltage plays a major role in the "anti-ambipolar" behavior, where the drain-source current can only pass through in specific range of gate voltage (Vg) and it will be restrained if the Vg goes beyond the range. Several improved strategies were theoretically discussed and experimentally adopted to obtain higher current on/off ratio for the anti-ambipolar devices, such as choosing suitable p-/n-pair, increasing carrier concentration by using thicker-layer TMDs, and so on. The modified SnS2/WSe2 device with the current on/off ratio exceeding 200 and on-state Vg ranging from -20 to 0 V was successfully achieved. On the basis of the anti-ambipolar field-effect transistors (FETs), we also reveal the potential of three-channel device unit for signal processing and information storage. With the equal quantity N of device units, 3(N) digital signals can be obtained from such three-channel devices, which are much larger than 2(N) ones obtained from traditional two-channel complementary metal oxide semiconductors (CMOS).
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Affiliation(s)
- Yongtao Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, P. R. China
| | - Yan Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, P. R. China
| | - Le Huang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, P. R. China
| | - Xiaoting Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, P. R. China
| | - Xingyun Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, P. R. China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, P. R. China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, P. R. China
| | - Jingbo Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, P. R. China
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39
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Ryder CR, Wood JD, Wells SA, Hersam MC. Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus. ACS NANO 2016; 10:3900-17. [PMID: 27018800 DOI: 10.1021/acsnano.6b01091] [Citation(s) in RCA: 69] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensitive to their environment and chemical modification, resulting in a strong dependence of their properties on substrate effects, intrinsic defects, and extrinsic adsorbates. Furthermore, the integration of 2D semiconductors into electronic and optoelectronic devices introduces unique challenges at metal-semiconductor and dielectric-semiconductor interfaces. Here, we review emerging efforts to understand and exploit chemical effects to influence the properties of 2D TMDCs and BP. In some cases, surface chemistry leads to significant degradation, thus necessitating the development of robust passivation schemes. On the other hand, appropriately designed chemical modification can be used to beneficially tailor electronic properties, such as controlling doping levels and charge carrier concentrations. Overall, chemical methods allow substantial tunability of the properties of 2D TMDCs and BP, thereby enabling significant future opportunities to optimize performance for device applications.
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Affiliation(s)
- Christopher R Ryder
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Joshua D Wood
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Spencer A Wells
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
- Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
- Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
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40
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Yu X, Marks TJ, Facchetti A. Metal oxides for optoelectronic applications. NATURE MATERIALS 2016; 15:383-96. [PMID: 27005918 DOI: 10.1038/nmat4599] [Citation(s) in RCA: 375] [Impact Index Per Article: 46.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2015] [Accepted: 02/15/2016] [Indexed: 05/27/2023]
Abstract
Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.
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Affiliation(s)
- Xinge Yu
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Opto-electronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
- Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA
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41
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Jariwala D, Howell SL, Chen KS, Kang J, Sangwan VK, Filippone SA, Turrisi R, Marks TJ, Lauhon LJ, Hersam MC. Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2. NANO LETTERS 2016; 16:497-503. [PMID: 26651229 DOI: 10.1021/acs.nanolett.5b04141] [Citation(s) in RCA: 47] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
The recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semimetallic graphene and insulating boron nitride, has enabled the fabrication of "all 2D" van der Waals heterostructure devices. Furthermore, the concept of van der Waals heterostructures has the potential to be significantly broadened beyond layered solids. For example, molecular and polymeric organic solids, whose surface atoms possess saturated bonds, are also known to interact via van der Waals forces and thus offer an alternative for scalable integration with 2D materials. Here, we demonstrate the integration of an organic small molecule p-type semiconductor, pentacene, with a 2D n-type semiconductor, MoS2. The resulting p-n heterojunction is gate-tunable and shows asymmetric control over the antiambipolar transfer characteristic. In addition, the pentacene/MoS2 heterojunction exhibits a photovoltaic effect attributable to type II band alignment, which suggests that MoS2 can function as an acceptor in hybrid solar cells.
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Affiliation(s)
- Deep Jariwala
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Sarah L Howell
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Kan-Sheng Chen
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Junmo Kang
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Vinod K Sangwan
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Stephen A Filippone
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Riccardo Turrisi
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
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42
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Zhu J, Liu X, Geier ML, McMorrow JJ, Jariwala D, Beck ME, Huang W, Marks TJ, Hersam MC. Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:63-68. [PMID: 26514248 DOI: 10.1002/adma.201504501] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2015] [Revised: 10/04/2015] [Indexed: 06/05/2023]
Abstract
Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm(-2) and low leakage currents down to 6 × 10(-9) A cm(-2) that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.
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Affiliation(s)
- Jian Zhu
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Xiaolong Liu
- Graduate Program in Applied Physics, Northwestern University, Evanston, IL, 60208, USA
| | - Michael L Geier
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Julian J McMorrow
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Deep Jariwala
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Megan E Beck
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Wei Huang
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
- Graduate Program in Applied Physics, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
- Graduate Program in Applied Physics, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
- Department of Medicine, Northwestern University, Evanston, IL, 60208, USA
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43
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Kim BJ, Hwang E, Kang MS, Cho JH. Electrolyte-gated graphene Schottky barrier transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:5875-5881. [PMID: 26315936 DOI: 10.1002/adma.201502020] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2015] [Revised: 06/30/2015] [Indexed: 06/04/2023]
Abstract
A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p- and n-type characteristics under low-voltage operation (<1 V), yielding high current densities (>100 mA cm(-2) ) and on/off current ratios (>10(3) ).
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Affiliation(s)
- Beom Joon Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea
- Department of Physics, Sungkyunkwan University, Suwon, 440-746, South Korea
| | - Moon Sung Kang
- Department of Chemical Engineering, Soongsil University, Seoul, 156-743, South Korea
| | - Jeong Ho Cho
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea
- School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea
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44
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Honda W, Harada S, Ishida S, Arie T, Akita S, Takei K. High-performance, mechanically flexible, and vertically integrated 3D carbon nanotube and InGaZnO complementary circuits with a temperature sensor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:4674-4680. [PMID: 26177598 DOI: 10.1002/adma.201502116] [Citation(s) in RCA: 35] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2015] [Revised: 06/03/2015] [Indexed: 06/04/2023]
Abstract
A vertically integrated inorganic-based flexible complementary metal-oxide-semiconductor (CMOS) inverter with a temperature sensor with a high inverter gain of ≈50 and a low power consumption of <7 nW mm(-1) is demonstrated using a layer-by-layer assembly process. In addition, the negligible influence of the mechanical flexibility on the performance of the CMOS inverter and the temperature dependence of the CMOS inverter characteristics are discussed.
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Affiliation(s)
- Wataru Honda
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan
| | - Shingo Harada
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan
| | - Shohei Ishida
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan
| | - Takayuki Arie
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan
| | - Seiji Akita
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan
| | - Kuniharu Takei
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan
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