1
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Xia Y, Song B, Zhang Z, Wang KL, Li YH, Li N, Chen CH, Chen J, Xing G, Wang ZK. Vertically Concentrated Quantum Wells Enabling Highly Efficient Deep-Blue Perovskite Light-Emitting Diodes. Angew Chem Int Ed Engl 2024; 63:e202403739. [PMID: 38565430 DOI: 10.1002/anie.202403739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Revised: 03/27/2024] [Accepted: 04/02/2024] [Indexed: 04/04/2024]
Abstract
Deep-blue perovskite light-emitting diodes (PeLEDs) based on quasi-two-dimensional (quasi-2D) systems exist heightened sensitivity to the domain distribution. The top-down crystallization mode will lead to a vertical gradient distribution of quantum well (QW) structure, which is unfavorable for deep-blue emission. Herein, a thermal gradient annealing treatment is proposed to address the polydispersity issue of vertical QWs in quasi-2D perovskites. The formation of large-n domains at the upper interface of the perovskite film can be effectively inhibited by introducing a low-temperature source in the annealing process. Combined with the utilization of NaBr to inhibit the undesirable n=1 domain, a vertically concentrated QW structure is ultimately attained. As a result, the fabricated device delivers a narrow and stable deep-blue emission at 458 nm with an impressive external quantum efficiency (EQE) of 5.82 %. Green and sky-blue PeLEDs with remarkable EQE of 21.83 % and 17.51 % are also successfully achieved, respectively, by using the same strategy. The findings provide a universal strategy across the entire quasi-2D perovskites, paving the way for future practical application of PeLEDs.
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Affiliation(s)
- Yu Xia
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Bin Song
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Zhipeng Zhang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078 Macao SAR, China
| | - Kai-Li Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Yu-Han Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Nan Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Chun-Hao Chen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Jing Chen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078 Macao SAR, China
| | - Zhao-Kui Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
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2
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Yao J, Wang Z, Huang Y, Xue J, Zhang D, Chen J, Chen X, Dong SC, Lu H. Efficient Green Spin Light-Emitting Diodes Enabled by Ultrafast Energy- and Spin-Funneling in Chiral Perovskites. J Am Chem Soc 2024; 146:14157-14165. [PMID: 38727602 DOI: 10.1021/jacs.4c02821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/23/2024]
Abstract
Introducing molecular chirality into perovskite crystal structures has enabled the control of carrier spin states, giving rise to circularly polarized luminescence (CPL) in thin films and circularly polarized electroluminescence (CPEL) in LEDs. Spin-LEDs can be fabricated either through a spin-filtering layer enabled by chiral-induced spin selectivity or a chiral emissive layer. The former requires a high degree of spin polarization and a compatible spinterface for efficient spin injection, which might not be easily integrated into LEDs. Alternatively, a chiral emissive layer can also generate circularly polarized electroluminescence, but the efficiency remains low and the fundamental mechanism is elusive. In this work, we report an efficient green LED based on quasi-two-dimensional (quasi-2D) chiral perovskites as the emitting layer (EML), where CPEL is directly produced without separate carrier spin injection. The optimized chiral perovskite thin films exhibited strong CPL at 535 nm with a photoluminescence quantum yield (PLQY) of 91% and a photoluminescence dissymmetry factor (glum) of 8.6 × 10-2. Efficient green spin-LEDs were successfully demonstrated, with a large EL dissymmetry factor (gEL) of 7.8 × 10-2 and a maximum external quantum efficiency (EQE) of 13.5% at room temperature. Ultrafast transient absorption (TA) spectroscopic study shows that the CPEL is generated from a rapid energy transfer accompanied by spin transfer from 2D to 3D perovskites. Our study not only demonstrates a reliable approach to achieve high performance spin-LEDs but also reveals the fundamental mechanism of CPEL with an emissive layer of chiral perovskites.
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Affiliation(s)
- Jingwen Yao
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, 999077 Hong Kong (SAR), China
- Institute for Advanced Study, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, 999077 Hong Kong (SAR), China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, 999077 Hong Kong (SAR), China
| | - Zhiyu Wang
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, 999077 Hong Kong (SAR), China
| | - Yuling Huang
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Jie Xue
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, 999077 Hong Kong (SAR), China
| | - Dengliang Zhang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, Guangdong 510640, China
| | - Jiangshan Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, Guangdong 510640, China
| | - Xihan Chen
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Shou-Cheng Dong
- Institute for Advanced Study, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, 999077 Hong Kong (SAR), China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, 999077 Hong Kong (SAR), China
| | - Haipeng Lu
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, 999077 Hong Kong (SAR), China
- Energy Institute, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, 999077 Hong Kong (SAR), China
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3
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Zeng Y, Ma S, Cao F, Chen W, Wang Q, Jin G, Wei J, Liu F, Manna L, Yang X, Li H. High-Efficiency and Stable Colloidal One-Dimensional Core/Shell Nanorod Light-Emitting Diodes. NANO LETTERS 2024; 24:5647-5655. [PMID: 38655813 DOI: 10.1021/acs.nanolett.4c01166] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Anisotropic nanocrystals such as nanorods (NRs) display unique linearly polarized emission, which is expected to break the external quantum efficiency (EQE) limit of quantum dot-based light-emitting diodes (LEDs). However, the progress in achieving a higher EQE using NRs encounters several challenges, primarily involving a low photoluminescence quantum yield (PLQY) of NRs and imbalanced charge injection in NR-LEDs. In this work, we investigated NR-LEDs based on CdSe/CdZnS/ZnS rod-in-rod NRs with a high PLQY and higher linear polarization compared to those of dot-in-rod NRs. The balanced charge injection is achieved using ZnMgO nanoparticles as the electron transport layer and poly-TPD {poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine]} as the hole transport layer. Therefore, the NR-LEDs exhibit a maximum EQE of 21.5% and a maximum luminance of >120 000 cd/m2 owing to the high level of in-plane transitions with a dipole moment of 90%. The NR-LEDs also have greatly inhibited droop in EQE under a high current density as well as outstanding operation lifetime and cycle stability.
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Affiliation(s)
- Yicheng Zeng
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Shaolin Ma
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China
| | - Fan Cao
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China
| | - Weiwei Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qingya Wang
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, China
| | - Geyu Jin
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jing Wei
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Fangze Liu
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, China
| | - Liberato Manna
- Department of Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China
| | - Hongbo Li
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
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Ngai KH, Sun X, Zou X, Fan K, Wei Q, Li M, Li S, Lu X, Meng W, Wu B, Zhou G, Long M, Xu J. Charge Injection and Auger Recombination Modulation for Efficient and Stable Quasi-2D Perovskite Light-Emitting Diodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2309500. [PMID: 38447143 PMCID: PMC11095209 DOI: 10.1002/advs.202309500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Revised: 02/19/2024] [Indexed: 03/08/2024]
Abstract
The inefficient charge transport and large exciton binding energy of quasi-2D perovskites pose challenges to the emission efficiency and roll-off issues for perovskite light-emitting diodes (PeLEDs) despite excellent stability compared to 3D counterparts. Herein, alkyldiammonium cations with different molecular sizes, namely 1,4-butanediamine (BDA), 1,6-hexanediamine (HDA) and 1,8-octanediamine (ODA), are employed into quasi-2D perovskites, to simultaneously modulate the injection efficiency and recombination dynamics. The size increase of the bulky cation leads to increased excitonic recombination and also larger Auger recombination rate. Besides, the larger size assists the formation of randomly distributed 2D perovskite nanoplates, which results in less efficient injection and deteriorates the electroluminescent performance. Moderate exciton binding energy, suppressed 2D phases and balanced carrier injection of HDA-based PeLEDs contribute to a peak external quantum efficiency of 21.9%, among the highest in quasi-2D perovskite based near-infrared devices. Besides, the HDA-PeLED shows an ultralong operational half-lifetime T50 up to 479 h at 20 mA cm‒2, and sustains the initial performance after a record-level 30 000 cycles of ON-OFF switching, attributed to the suppressed migration of iodide anions into adjacent layers and the electrochemical reaction in HDA-PeLEDs. This work provides a potential direction of cation design for efficient and stable quasi-2D-PeLEDs.
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Affiliation(s)
- Kwan Ho Ngai
- South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
- Department of Electronic EngineeringThe Chinese University of Hong KongShatinNew Territories999077Hong Kong
| | - Xinwen Sun
- Department of Electronic EngineeringThe Chinese University of Hong KongShatinNew Territories999077Hong Kong
| | - Xinhui Zou
- Department of Physics and William Mong Institute of Nano Science and TechnologyThe Hong Kong University of Science and TechnologyClear Water BayKowloon999077Hong Kong
| | - Kezhou Fan
- Department of Physics and William Mong Institute of Nano Science and TechnologyThe Hong Kong University of Science and TechnologyClear Water BayKowloon999077Hong Kong
| | - Qi Wei
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityKowloon999077Hong Kong
| | - Mingjie Li
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityKowloon999077Hong Kong
| | - Shiang Li
- Department of PhysicsThe Chinese University of Hong KongShatinNew Territories999077Hong Kong
| | - Xinhui Lu
- Department of PhysicsThe Chinese University of Hong KongShatinNew Territories999077Hong Kong
| | - Weiwei Meng
- South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Bo Wu
- South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Guofu Zhou
- South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Mingzhu Long
- South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Jianbin Xu
- Department of Electronic EngineeringThe Chinese University of Hong KongShatinNew Territories999077Hong Kong
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5
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Song S, Rahaman M, Jariwala D. Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics? ACS NANO 2024; 18:10955-10978. [PMID: 38625032 DOI: 10.1021/acsnano.3c12938] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.
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Affiliation(s)
- Seunguk Song
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Mahfujur Rahaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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6
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Zhang L, Wang S, Jiang Y, Yuan M. Stable and Efficient Mixed-halide Perovskite LEDs. CHEMSUSCHEM 2024; 17:e202301205. [PMID: 38081803 DOI: 10.1002/cssc.202301205] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2023] [Revised: 12/08/2023] [Indexed: 01/12/2024]
Abstract
Tailoring bandgap by mixed-halide strategy in perovskites has attracted extraordinary attention due to the flexibility of halide ion combinations and has emerged as the most direct and effective approach to precisely tune the emission wavelength throughout the entire visible light spectrum. Mixed-halide perovskites, yet, still suffered from several problems, particularly phase segregation under external stimuli because of ions migration. Understanding the essential cause and finding sound strategies, thus, remains a challenge for stable and efficient mixed-halide perovskite light-emitting diodes (PeLEDs). The review herein presents an overview of the diverse application scenarios and the profound significance associated with mixed-halide perovskites. We then summarize the challenges and potential research directions toward developing high stable and efficient mixed-halide PeLEDs. The review thus provides a systematic and timely summary for the community to deepen the understanding of mixed-halide perovskite materials and resulting PeLEDs.
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Affiliation(s)
- Li Zhang
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Stor1age Center (RECAST), College of Chemistry, Nankai University, Tianjin, P. R. China
| | - Saike Wang
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Stor1age Center (RECAST), College of Chemistry, Nankai University, Tianjin, P. R. China
| | - Yuanzhi Jiang
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Stor1age Center (RECAST), College of Chemistry, Nankai University, Tianjin, P. R. China
| | - Mingjian Yuan
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Stor1age Center (RECAST), College of Chemistry, Nankai University, Tianjin, P. R. China
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7
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Maufort A, Cerdá J, Van Hecke K, Deduytsche D, Verding A, Ruttens B, Li W, Detavernier C, Lutsen L, Quarti C, Vanderzande D, Beljonne D, Van Gompel WTM. Elucidating the Non-Covalent Interactions that Trigger Interdigitation in Lead-Halide Layered Hybrid Perovskites. Inorg Chem 2024; 63:5568-5579. [PMID: 38470041 DOI: 10.1021/acs.inorgchem.3c04536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/13/2024]
Abstract
Two-dimensional (2D) hybrid organic-inorganic perovskites constitute a versatile class of materials applied to a variety of optoelectronic devices. These materials are composed of alternating layers of inorganic lead halide octahedra and organic ammonium cations. Most perovskite research studies so far have focused on organic sublattices based on phenethylammonium and alkylammonium cations, which are packed by van der Waals cohesive forces. Here, we report a more complex organic sublattice containing benzotriazole-based ammonium cations packed through interdigitated π-π stacking and hydrogen bonding. Single crystals and thin films of four perovskite derivatives are studied in depth with optical spectroscopy and X-ray diffraction, supported by density-functional theory calculations. We quantify the lattice stabilization of interdigitation, dipole-dipole interactions, and inter- as well as intramolecular hydrogen bonding. Furthermore, we investigate the driving force behind interdigitation by defining a steric occupancy factor σ and tuning the composition of the organic and inorganic sublattice. We relate the phenomenon of interdigitation to the available lattice space and to weakened hydrogen bonding to the inorganic octahedra. Finally, we find that the stabilizing interactions in the organic sublattice slightly improve the thermal stability of the perovskite. This work sheds light on the design rules and structure-property relationships of 2D layered hybrid perovskites.
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Affiliation(s)
- Arthur Maufort
- Hybrid Materials Design, Institute for Materials Research (imo-imomec), Hasselt University, Martelarenlaan 42, B-3500 Hasselt, Belgium
| | - Jesús Cerdá
- Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, B-7000 Mons, Belgium
| | - Kristof Van Hecke
- XStruct, Department of Chemistry, Ghent University, Krijgslaan 281-S3, B-9000 Ghent, Belgium
| | - Davy Deduytsche
- Conformal Coating of Nanomaterials, Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, B-9000 Ghent, Belgium
| | - Arne Verding
- Hybrid Materials Design, Institute for Materials Research (imo-imomec), Hasselt University, Martelarenlaan 42, B-3500 Hasselt, Belgium
| | - Bart Ruttens
- Imec-imomec, Wetenschapspark 1, B-3590 Diepenbeek, Belgium
| | - Wei Li
- Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, B-7000 Mons, Belgium
| | - Christophe Detavernier
- Conformal Coating of Nanomaterials, Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, B-9000 Ghent, Belgium
| | - Laurence Lutsen
- Hybrid Materials Design, Institute for Materials Research (imo-imomec), Hasselt University, Martelarenlaan 42, B-3500 Hasselt, Belgium
- Imec-imomec, Wetenschapspark 1, B-3590 Diepenbeek, Belgium
| | - Claudio Quarti
- Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, B-7000 Mons, Belgium
| | - Dirk Vanderzande
- Hybrid Materials Design, Institute for Materials Research (imo-imomec), Hasselt University, Martelarenlaan 42, B-3500 Hasselt, Belgium
- Imec-imomec, Wetenschapspark 1, B-3590 Diepenbeek, Belgium
| | - David Beljonne
- Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, B-7000 Mons, Belgium
| | - Wouter T M Van Gompel
- Hybrid Materials Design, Institute for Materials Research (imo-imomec), Hasselt University, Martelarenlaan 42, B-3500 Hasselt, Belgium
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Li BH, Di H, Li H, Wang JC, Zeng W, Cheng DB, Zhou C, Wang X, Shi Y, Song J, Zhao Y, Yang X, Ren Z. Unveiling the Intrinsic Photophysics in Quasi-Two-Dimensional Perovskites. J Am Chem Soc 2024; 146:6974-6982. [PMID: 38417031 DOI: 10.1021/jacs.3c14737] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/01/2024]
Abstract
The two-dimensional (2D) perovskites have drawn intensive attention due to their unique stability and outstanding optoelectronic properties. However, the debate surrounding the spatial phase distribution and band alignment among different 2D phases in the quasi-2D perovskite has created complexities in understanding the carrier dynamics, hindering material and device development. In this study, we employed highly sensitive transient absorption spectroscopy to investigate the carrier dynamics of (BA)2(MA)n-1PbnI3n+1 quasi-2D Ruddlesden-Popper perovskite thin films, nominally prepared as n = 4. We observed the carrier-density-dependent electron and hole transfer dynamics between the 2D and three-dimensional (3D) phases. Under a low carrier density within the linear response range, we successfully resolved three ultrafast processes of both electron and hole transfers, spanning from hundreds of femtoseconds to several picoseconds, tens to hundreds of picoseconds, and hundreds of picoseconds to several nanoseconds, which can be attributed to lateral-epitaxial, partial-epitaxial, and disordered-interface heterostructures between 2D and 3D phases. By considering the interplay among the phase structure, band alignment, and carrier dynamics, we have proposed material synthesis strategies aimed at enhancing the carrier transport. Our results not only provide deep insights into an accurate intrinsic photophysics of quasi-2D perovskites but also inspire advancements in the practical application of these materials.
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Affiliation(s)
- Bo-Han Li
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Haipeng Di
- Institute of Materials, China Academy of Engineering Physics, Jiangyou 621908, P. R. China
| | - Huang Li
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P. R. China
- Department of Chemical Physics, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Jia-Cheng Wang
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P. R. China
- University of Chinese Academy of Sciences, 19 A Yuquan Road, Beijing 100049, P. R. China
| | - Wen Zeng
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P. R. China
- University of Chinese Academy of Sciences, 19 A Yuquan Road, Beijing 100049, P. R. China
| | - Da-Bing Cheng
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P. R. China
| | - Chuanyao Zhou
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P. R. China
| | - Xingan Wang
- Department of Chemical Physics, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Yan Shi
- Institute of Materials, China Academy of Engineering Physics, Jiangyou 621908, P. R. China
| | - Jiangfeng Song
- Institute of Materials, China Academy of Engineering Physics, Jiangyou 621908, P. R. China
| | - Yiying Zhao
- Institute of Materials, China Academy of Engineering Physics, Jiangyou 621908, P. R. China
| | - Xueming Yang
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P. R. China
- Department of Chemistry, Southern University of Science and Technology, 1088 Xueyuan Road, Shenzhen 518055, P. R. China
| | - Zefeng Ren
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P. R. China
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9
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Rahimi S, Eskandari M, Fathi D. New nanostructure perovskite-based light-emitting diode with superior light extraction efficiency enhancement. Sci Rep 2024; 14:5500. [PMID: 38448629 PMCID: PMC10918065 DOI: 10.1038/s41598-024-55951-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Accepted: 02/29/2024] [Indexed: 03/08/2024] Open
Abstract
The external quantum efficiency (EQE) of a perovskite-based light-emitting diode (PELED) is a key indicator, comprising the internal quantum efficiency (IQE) and light extraction efficiency (LEE). Currently, enhancing EQE faces a major challenge in optimizing LEE. This study introduces an innovative structure to boost LEE, exploring various influencing parameters. The transition from a planar to a domical architecture leverages factors like the waveguiding effect, resulting in a remarkable tenfold increase in LEE, from 6 to 59%. Additionally, investigations into factors affecting LEE, such as altering dipole orientation, material-substrate contact angle, and layer thickness, reveal the potential for further improvement. The optimized structure attains an impressive LEE value of 74%.
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Affiliation(s)
- Saeed Rahimi
- Department of Electrical and Computer Engineering, Tarbiat Modares University (TMU), Tehran, Iran
| | - Mehdi Eskandari
- Nanomaterial Research Group, Academic Center for Education, Culture & Research (ACECR) on TMU, Tehran, Iran
| | - Davood Fathi
- Department of Electrical and Computer Engineering, Tarbiat Modares University (TMU), Tehran, Iran.
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10
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Majdoub M, Sengottuvelu D, Nouranian S, Al-Ostaz A. Graphitic Carbon Nitride Quantum Dots (g-C 3 N 4 QDs): From Chemistry to Applications. CHEMSUSCHEM 2024:e202301462. [PMID: 38433108 DOI: 10.1002/cssc.202301462] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 02/23/2024] [Accepted: 02/26/2024] [Indexed: 03/05/2024]
Abstract
Since their emergence in 2014, graphitic carbon nitride quantum dots (g-C3 N4 QDs) have attracted much interest from the scientific community due to their distinctive physicochemical features, including structural, morphological, electrochemical, and optoelectronic properties. Owing to their desirable characteristics, such as non-zero band gap, ability to be chemically functionalized or doped, possessing tunable properties, outstanding dispersibility in different media, and biocompatibility, g-C3 N4 QDs have shown promise for photocatalysis, energy devices, sensing, bioimaging, solar cells, optoelectronics, among other applications. As these fields are rapidly evolving, it is very strenuous to pinpoint the emerging challenges of the g-C3 N4 QDs development and application during the last decade, mainly due to the lack of critical reviews of the innovations in the g-C3 N4 QDs synthesis pathways and domains of application. Herein, an extensive survey is conducted on the g-C3 N4 QDs synthesis, characterization, and applications. Scenarios for the future development of g-C3 N4 QDs and their potential applications are highlighted and discussed in detail. The provided critical section suggests a myriad of opportunities for g-C3 N4 QDs, especially for their synthesis and functionalization, where a combination of eco-friendly/single step synthesis and chemical modification may be used to prepare g-C3 N4 QDs with, for example, enhanced photoluminescence and production yields.
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Affiliation(s)
- Mohammed Majdoub
- Center for Graphene Research and Innovation, University of Mississippi, University, MS 38677, United States
| | - Dineshkumar Sengottuvelu
- Center for Graphene Research and Innovation, University of Mississippi, University, MS 38677, United States
| | - Sasan Nouranian
- Center for Graphene Research and Innovation, University of Mississippi, University, MS 38677, United States
- Department of Chemical Engineering, University of Mississippi, University, MS 38677, United States
| | - Ahmed Al-Ostaz
- Center for Graphene Research and Innovation, University of Mississippi, University, MS 38677, United States
- Department of Civil Engineering, University of Mississippi, University, MS 38677, United States
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11
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Li Z, Lin Y, Gu H, Zhang N, Wang B, Cai H, Liao J, Yu D, Chen Y, Fang G, Liang C, Yang S, Xing G. Large-n quasi-phase-pure two-dimensional halide perovskite: A toolbox from materials to devices. Sci Bull (Beijing) 2024; 69:382-418. [PMID: 38105163 DOI: 10.1016/j.scib.2023.12.014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Revised: 11/14/2023] [Accepted: 11/24/2023] [Indexed: 12/19/2023]
Abstract
Despite their excellent environmental stability, low defect density, and high carrier mobility, large-n quasi-two-dimensional halide perovskites (quasi-2DHPs) feature a limited application scope because of the formation of self-assembled multiple quantum wells (QWs) due to the similar thermal stabilities of large-n phases. However, large-n quasi-phase-pure 2DHPs (quasi-PP-2DHPs) can solve this problem perfectly. This review discusses the structures, formation mechanisms, and photoelectronic and physical properties of quasi-PP-2DHPs, summarises the corresponding single crystals, thin films, and heterojunction preparation methods, and presents the related advances. Moreover, we focus on applications of large-n quasi-PP-2DHPs in solar cells, photodetectors, lasers, light-emitting diodes, and field-effect transistors, discuss the challenges and prospects of these emerging photoelectronic materials, and review the potential technological developments in this area.
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Affiliation(s)
- Zijia Li
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yuexin Lin
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hao Gu
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macao 999078, China
| | - Nan Zhang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Bin Wang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hairui Cai
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jinfeng Liao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macao 999078, China
| | - Dejian Yu
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macao 999078, China
| | - Yiwang Chen
- National Engineering Research Center for Carbohydrate Synthesis, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang 330022, China
| | - Guojia Fang
- Key Laboratory of Artificial Micro/Nano Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chao Liang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Shengchun Yang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macao 999078, China.
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12
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Xiao H, Li R, Cai W, Zang Z. Development of Quasi-Two-Dimensional Perovskites and Their Application in Light-Emitting Diodes. Inorg Chem 2024; 63:2853-2876. [PMID: 38299502 DOI: 10.1021/acs.inorgchem.3c03375] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2024]
Abstract
Quasi-two-dimensional (quasi-2D) perovskites have attracted much attention due to their outstanding properties, such as inherent quantum-well structure, strong dielectric and quantum confinement, large exciton binding energy, and high photoluminescence quantum yield. By virtue of these superior merits, quasi-2D perovskites have shown great potential for next-generation light-emitting diodes (LEDs). Herein, this review presents an overview of the basic properties of quasi-2D perovskites and their photoluminescence modulations by large organic cation engineering, monovalent cation engineering, halogen engineering, defect passivation engineering, and dimensionality engineering. Furthermore, the strategies of charge-transport layer optimization, interfacial engineering, light-outcoupling efficiency improvement, and operating stability improvement are summarized for fabricating high-performance quasi-2D perovskite LEDs (PeLEDs). Finally, the challenges and outlook for the future development of quasi-2D PeLEDs are unambiguously proposed.
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Affiliation(s)
- Hongbin Xiao
- Key Laboratory of Optoelectronic Technology and Systems, Ministry of Education, Chongqing University, Chongqing 400044, China
- School of Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
- School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, China
| | - Ru Li
- Key Laboratory of Optoelectronic Technology and Systems, Ministry of Education, Chongqing University, Chongqing 400044, China
| | - Wensi Cai
- Key Laboratory of Optoelectronic Technology and Systems, Ministry of Education, Chongqing University, Chongqing 400044, China
| | - Zhigang Zang
- Key Laboratory of Optoelectronic Technology and Systems, Ministry of Education, Chongqing University, Chongqing 400044, China
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13
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Kim J, Chu YH, Park J, Bang K, Yoon S, Park S, Park K, Kwon J, Kim N, Yoon KT, Kim Y, Lee YS, Shin B. Spectrally Stable Deep-Blue Light-Emitting Diodes Based on Layer-Transferred Single-Crystalline Ruddlesden-Popper Halide Perovskites. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6274-6283. [PMID: 38282293 DOI: 10.1021/acsami.3c17911] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
A novel approach to producing high-color-purity blue-light-emitting diodes based on single-crystalline Ruddlesden-Popper perovskites (RPPs) is reported. The utilization of a pure bromide composition eliminates any possibility of halide segregation, which can otherwise lead to undesired shifts in the emission wavelength or irreversible degradation of the spectral line width. Phase-pure PEA2MAPb2Br7 single crystals with a lateral size exceeding 1 cm2 can be synthesized using the inverse temperature crystallization method. To prepare RPP layers with a thickness of less than 50 nm, we employ a thinning process of the initially thick bulk crystals, followed by a dry-transfer process to place them onto a hole transport layer and an indium-tin-oxide-coated glass substrate. By utilizing polydimethylsiloxane as a handling layer, deformations of the bulk RPP crystal and exfoliated RPP layer, as well as the formation of defects such as pinholes, can be effectively suppressed. Subsequent depositions of an electron transport layer and a metal contact complete the fabrication of electroluminescence (EL) devices. The EL devices utilizing the single-crystalline RPP demonstrate excellent spectral stability across a broad range of the applied bias voltage spanning from 4.5 to 10 V, exhibiting a significantly narrow line width of 14 nm at an emission wavelength of 440 nm that can potentially cover 99.3% of the Rec. 2020 color gamut. The sharp EL emission spectrum can be effectively preserved, avoiding any broadening of the line width, by suppressing Joule heating throughout the device operation, in addition to the intrinsic stability of single-crystalline RPPs.
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Affiliation(s)
- Joonyun Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Young Ho Chu
- Department of Mechanical Engineering, Seoul National University (SNU), Seoul 08826, Republic of Korea
| | - Jinu Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Kijoon Bang
- Department of Mechanical Engineering, Seoul National University (SNU), Seoul 08826, Republic of Korea
| | - Sunggun Yoon
- Department of Mechanical Engineering, Seoul National University (SNU), Seoul 08826, Republic of Korea
| | - Seoyeon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Kitae Park
- Department of Mechanical Engineering, Seoul National University (SNU), Seoul 08826, Republic of Korea
| | - Jiyoung Kwon
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Nakyung Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Kyung Tak Yoon
- Department of Mechanical Engineering, Seoul National University (SNU), Seoul 08826, Republic of Korea
| | - Yunna Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Yun Seog Lee
- Department of Mechanical Engineering, Seoul National University (SNU), Seoul 08826, Republic of Korea
| | - Byungha Shin
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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14
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Tang J, Zhang G, Wang C, Deng L, Zhu X, Yu H, Wang K, Li J. Investigation of the Role of K 2SO 4 Electrolyte in Hole Transport Layer for Efficient Quasi-2D Perovskite Light-Emitting Diodes. J Phys Chem Lett 2024; 15:1112-1120. [PMID: 38262437 DOI: 10.1021/acs.jpclett.3c03417] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2024]
Abstract
Quasi-two-dimensional (2D) perovskite light-emitting diodes are promising light sources for color display and lighting. However, poor carrier injection and transport between the bottom hole transport layer (HTL) and perovskite limit the device performance. Here we demonstrate a simple and effective way to modify the HTL for enhancing the performance of perovskite light-emitting diodes (PeLEDs). An electrolyte K2SO4 is used to mix with poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as the hole transport layer. The K+ doping helped the quasi-2D perovskite phases grow vertically along the interface of the PEDOT:PSS, fine-modulate the phase distribution, and simultaneously reduce the defect density of quasi-2D perovskites. It also significantly reduced the exciton quenching and injection barrier at PEDOT:PSS and quasi-2D perovskite interface. The optimized green PeLEDs with the K2SO4 doped PEDOT:PSS HTL showed a maximum luminance of 17185 cd/m2 which is almost 4.7 times brighter than the control one, with a maximum external quantum efficiency of 18.64%.
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Affiliation(s)
- Jun Tang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Guoshuai Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Chenming Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Liangliang Deng
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai 200438, China
| | - Xixiang Zhu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Haomiao Yu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Kai Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Jinpeng Li
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
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15
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Zhang F, Yang Y, Gao Y, Wang D, Dong W, Lu P, Wang X, Lu M, Wu Y, Chen P, Hu J, Yang X, Zhou D, Liu D, Xu L, Dong B, Wu Z, Zhang Y, Song H, Bai X. High-Performance Blue Perovskite Light-Emitting Diodes Enabled by Synergistic Effect of Additives. NANO LETTERS 2024; 24:1268-1276. [PMID: 38241736 DOI: 10.1021/acs.nanolett.3c04267] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
While quasi-two-dimensional (quasi-2D) perovskites have good properties of cascade energy transfer, high exciton binding energy, and high quantum efficiency, which will benefit high-efficiency blue PeLEDs, inefficient domain distribution management and unbalanced carrier transport impede device performance improvement. Herein, (2-(9H-carbazol-9-yl)ethyl)phosphonic acid (2PACz) and methyl 2-aminopyridine-4-carboxylate (MAC) were simultaneously introduced to a blue quasi-2D perovskite film. Relying on the synergistic effect of 2PACz and MAC, it not only modulates the phase distribution inhibiting the n = 2 phase but also greatly improves the electrical property of the quasi-2D perovskite film. As a result, the as-modified blue quasi-2D PeLED demonstrated an external quantum efficiency (EQE) of 17.08% and a luminance of 10142 cd m-2. This study exemplifies the synergistic effect among dual additives and offers a new effective additive strategy modulating phase distribution and building balanced carrier transport, which paves the way for the fabrication of highly efficient blue PeLEDs.
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Affiliation(s)
- Fujun Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Yingguo Yang
- School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Yanbo Gao
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Dingdi Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Weinan Dong
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Po Lu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Xue Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Yanjie Wu
- State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, People's Republic of China
| | - Ping Chen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Junhua Hu
- State Centre for International Cooperation on Designer Low-Carton & Environmental Materials School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200444, People's Republic of China
| | - Donglei Zhou
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Dali Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Lin Xu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Biao Dong
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Zhennan Wu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Hongwei Song
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, People's Republic of China
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16
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Gao FF, Qin Y, Li ZG, Li W, Hao J, Li X, Liu Y, Howard CJ, Wu X, Jiang X, Lin Z, Lu P, Bu XH. Unusual Pressure-Induced Self-Trapped Exciton to Free Exciton Transfer in Chiral 2D Lead Bromide Perovskites. ACS NANO 2024; 18:3251-3259. [PMID: 38227818 DOI: 10.1021/acsnano.3c09756] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
The phenomenon of pressure-induced emission alterations related to complex excitonic dynamics in 2D lead halide perovskites (LHPs) has gained considerable attention for understanding their structure-property relationship and obtaining inaccessible luminescence under ambient conditions. However, the well-known pressure-induced emissions are limited to the formation of self-trapped excitons (STEs) due to the structural distortion under compression, which goes against the advantage of the highly pure emission of LHPs. Here, the pressure-induced detrapping from STEs to free excitons (FEs) accompanied by the dramatic transition from broadband orangish emission to narrow blue emission has been achieved in chiral 2D LHPs and R- and S-[4MeOPEA]2PbBr4, (4MeOPEA = 4-methoxy-α-methylbenzylammonium). The combined experimental and calculated results reveal that the distortion level of PbBr6 octahedra of R- and S-[4MeOPEA]2PbBr4 exhibits an unusually significant reduction as the applied pressure increases, which leads to decreased electron-phonon coupling and self-trapped energy barrier and consequently enables the detrapping of STEs to FEs. This work illustrates the dramatic exciton transfer in 2D LHPs and highlights the potential for realizing highly efficient and pure light emissions by manipulating the structural distortion via strain engineering.
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Affiliation(s)
- Fei-Fei Gao
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University & TKL of Metal and Molecule Based Material Chemistry, Tianjin 300350, China
- Key Laboratory of Functional Inorganic Materials Chemistry (Ministry of Education) & School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, China
| | - Yan Qin
- School of Physics & Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, China
| | - Zhi-Gang Li
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University & TKL of Metal and Molecule Based Material Chemistry, Tianjin 300350, China
| | - Wei Li
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University & TKL of Metal and Molecule Based Material Chemistry, Tianjin 300350, China
| | - Jing Hao
- College of Chemistry & State Key Lab of Elemento-Organic Chemistry, Nankai University, Tianjin 300071, China
| | - Xiang Li
- State Key Laboratory of Geological Processes and Mineral Resources, China University of Geosciences, Wuhan 430074, China
| | - Yungui Liu
- State Key Laboratory of Geological Processes and Mineral Resources, China University of Geosciences, Wuhan 430074, China
| | | | - Xiang Wu
- State Key Laboratory of Geological Processes and Mineral Resources, China University of Geosciences, Wuhan 430074, China
| | - Xingxing Jiang
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Zheshuai Lin
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Peixiang Lu
- School of Physics & Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xian-He Bu
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University & TKL of Metal and Molecule Based Material Chemistry, Tianjin 300350, China
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17
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Xiao Y, Zou G, Huo J, Sun T, Peng J, Li Z, Shen D, Liu L. Local modulation of Au/MoS 2 Schottky barriers using a top ZnO nanowire gate for high-performance photodetection. NANOSCALE HORIZONS 2024; 9:285-294. [PMID: 38063807 DOI: 10.1039/d3nh00448a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
Schottky junctions are commonly used for fabricating heterojunction-based 2D transition metal dichalcogenide (TMD) photodetectors, characteristically offering a wide detection range, high sensitivity and fast response. However, these devices often suffer from reduced detectivity due to the high dark current, making it challenging to discover a simple and efficient universal way to improve the photoelectric performances. Here, we demonstrate a novel approach for integrating ZnO nanowire gates into a MoS2-Au Schottky junction to improve the photoelectric performances of photodetectors by locally controlling the Schottky barrier. This strategy remarkably reduces the dark current level of the device without affecting its photocurrent and the Schottky detectivity can be modified to a maximum detectivity of 1.4 × 1013 Jones with -20 V NG bias. This work provides potential possibilities for tuning the band structure of other materials and optimizing the performance of heterojunction photodetectors.
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Affiliation(s)
- Yu Xiao
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Jinpeng Huo
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Tianming Sun
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi Province, China
| | - Jin Peng
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Zehua Li
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Daozhi Shen
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
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18
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Koo Y, Moon T, Kang M, Joo H, Lee C, Lee H, Kravtsov V, Park KD. Dynamical control of nanoscale light-matter interactions in low-dimensional quantum materials. LIGHT, SCIENCE & APPLICATIONS 2024; 13:30. [PMID: 38272869 PMCID: PMC10810844 DOI: 10.1038/s41377-024-01380-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 11/26/2023] [Accepted: 01/10/2024] [Indexed: 01/27/2024]
Abstract
Tip-enhanced nano-spectroscopy and -imaging have significantly advanced our understanding of low-dimensional quantum materials and their interactions with light, providing a rich insight into the underlying physics at their natural length scale. Recently, various functionalities of the plasmonic tip expand the capabilities of the nanoscopy, enabling dynamic manipulation of light-matter interactions at the nanoscale. In this review, we focus on a new paradigm of the nanoscopy, shifting from the conventional role of imaging and spectroscopy to the dynamical control approach of the tip-induced light-matter interactions. We present three different approaches of tip-induced control of light-matter interactions, such as cavity-gap control, pressure control, and near-field polarization control. Specifically, we discuss the nanoscale modifications of radiative emissions for various emitters from weak to strong coupling regime, achieved by the precise engineering of the cavity-gap. Furthermore, we introduce recent works on light-matter interactions controlled by tip-pressure and near-field polarization, especially tunability of the bandgap, crystal structure, photoluminescence quantum yield, exciton density, and energy transfer in a wide range of quantum materials. We envision that this comprehensive review not only contributes to a deeper understanding of the physics of nanoscale light-matter interactions but also offers a valuable resource to nanophotonics, plasmonics, and materials science for future technological advancements.
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Affiliation(s)
- Yeonjeong Koo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Taeyoung Moon
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Mingu Kang
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Huitae Joo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Changjoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Hyeongwoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Vasily Kravtsov
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
| | - Kyoung-Duck Park
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.
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19
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Li Y, Li F, Yu Z, Tamilavan V, Oh CM, Jeong WH, Shen X, Lee S, Du X, Yang E, Ahn Y, Hwang IW, Lee BR, Park SH. Effective Small Organic Molecule as a Defect Passivator for Highly Efficient Quasi-2D Perovskite Light-Emitting Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2308847. [PMID: 38174599 DOI: 10.1002/smll.202308847] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 12/13/2023] [Indexed: 01/05/2024]
Abstract
The use of a small organic molecular passivator is proven to be a successful strategy for producing higher-performing quasi-2D perovskite light-emitting diodes (PeLEDs). The small organic molecule can passivate defects on the grain surround and surface of perovskite crystal structures, preventing nonradiative recombination and charge trapping. In this study, a new small organic additive called 2, 8-dibromodibenzofuran (diBDF) is reported and examines its effectiveness as a passivating agent in high-performance green quasi-2D PeLEDs. The oxygen atom in diBDF, acting as a Lewis base, forms coordination bonds with uncoordinated Pb2+ , so enhancing the performance of the device. In addition, the inclusion of diBDF in the quasi-2D perovskite results in a decrease in the abundance of low-n phases, hence facilitating efficient carrier mobility. Consequently, PeLED devices with high efficiency are successfully produced, exhibiting an external quantum efficiency of 19.9% at the emission wavelength of 517 nm and a peak current efficiency of 65.0 cd A-1 .
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Affiliation(s)
- Ying Li
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - Fuqiang Li
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - Zhongkai Yu
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | | | - Chang-Mok Oh
- Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Woo Hyeon Jeong
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Xinyu Shen
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK
| | - Seongbeom Lee
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
| | - Xiangrui Du
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - Eunhye Yang
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - Yoomi Ahn
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - In-Wook Hwang
- Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Bo Ram Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Sung Heum Park
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
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20
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Yudco S, Bisquert J, Etgar L. Enhanced LED Performance by Ion Migration in Multiple Quantum Well Perovskite. J Phys Chem Lett 2023; 14:11610-11617. [PMID: 38100371 DOI: 10.1021/acs.jpclett.3c02822] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Here we study the effect of ion migration on the performance of perovskite light emitting diodes (PeLEDs). We compared aromatic and linear barrier molecules in Ruddlesden-Popper and Dion-Jacobson two-dimensional perovskites having multiple quantum well (MQW) structures. PeLED devices were fabricated by using the same conditions and architecture, while their electroluminescence properties and ion migration behavior were investigated. Impedance spectroscopy measurements were used to analyze the PeLEDs, which found a direct link between the barrier molecule type, the device efficiency, and ion migration. The best performing LEDs were based on the aromatic barriers, which present dominant inductive impedance, indicating an earlier onset voltage of radiative recombination. These findings present an approach of how to control radiative emission in perovskite LEDs which opens the way for further improvement in PeLEDs and memristors.
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Affiliation(s)
- Shir Yudco
- Institute of Chemistry, Casali Center for Applied Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Juan Bisquert
- Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain
| | - Lioz Etgar
- Institute of Chemistry, Casali Center for Applied Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
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21
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Najarian AM, Vafaie M, Sabatini R, Wang S, Li P, Xu S, Saidaminov MI, Hoogland S, Sargent EH. 2D Hybrid Perovskites Employing an Organic Cation Paired with a Neutral Molecule. J Am Chem Soc 2023; 145:27242-27247. [PMID: 38061040 DOI: 10.1021/jacs.3c12172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Two-dimensional (2D) hybrid perovskites harness the chemical and structural versatility of organic compounds. Here, we explore 2D perovskites that incorporate both a first organic component, a primary ammonium cation, and a second neutral organic module. Through the experimental examination of 42 organic pairs with a range of functional groups and organic backbones, we identify five crystallization scenarios that occur upon mixing. Only one leads to the cointercalation of the organic modules with distinct and extended interlayer spacing, which is observed with the aid of X-ray diffraction (XRD) pattern analysis combined with cross-sectional transmission electron microscopy (TEM) and elemental analysis. We present a picture in which complementary pairs, capable of forming intermolecular bonds, cocrystallize with multiple structural arrangements. These arrangements are a function of the ratio of organic content, annealing temperature, and substrate surface characteristics. We highlight how noncovalent bonds, particularly hydrogen and halogen bonding, enable the influence over the organic sublattice in hybrid halide perovskites.
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Affiliation(s)
- Amin Morteza Najarian
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto M5S 3G4, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto M5S 3G4, Canada
| | - Randy Sabatini
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto M5S 3G4, Canada
| | - Sasa Wang
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto M5S 3G4, Canada
| | - Peng Li
- NanoFAB, University of Alberta, Edmonton, Alberta T6G 2V4, Canada
| | - Shihong Xu
- NanoFAB, University of Alberta, Edmonton, Alberta T6G 2V4, Canada
| | - Makhsud I Saidaminov
- Department of Chemistry, University of Victoria, Victoria, British Columbia V8P 5C2, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto M5S 3G4, Canada
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22
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Lee GH, Kim K, Kim Y, Yang J, Choi MK. Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting Diodes. NANO-MICRO LETTERS 2023; 16:45. [PMID: 38060071 DOI: 10.1007/s40820-023-01254-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/19/2023] [Indexed: 12/08/2023]
Abstract
Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability, pure color emission with remarkably narrow bandwidths, high quantum yield, and solution processability. Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes (PeLEDs) to their theoretical limits, their current fabrication using the spin-coating process poses limitations for fabrication of full-color displays. To integrate PeLEDs into full-color display panels, it is crucial to pattern red-green-blue (RGB) perovskite pixels, while mitigating issues such as cross-contamination and reductions in luminous efficiency. Herein, we present state-of-the-art patterning technologies for the development of full-color PeLEDs. First, we highlight recent advances in the development of efficient PeLEDs. Second, we discuss various patterning techniques of MPHs (i.e., photolithography, inkjet printing, electron beam lithography and laser-assisted lithography, electrohydrodynamic jet printing, thermal evaporation, and transfer printing) for fabrication of RGB pixelated displays. These patterning techniques can be classified into two distinct approaches: in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals. This review highlights advancements and limitations in patterning techniques for PeLEDs, paving the way for integrating PeLEDs into full-color panels.
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Affiliation(s)
- Gwang Heon Lee
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kiwook Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Yunho Kim
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
- Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
| | - Moon Kee Choi
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.
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23
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Liu A, Lu P, Lu M, Chai X, Liu Y, Guan G, Gao Y, Wu Z, Bai X, Hu J, Wang D, Zhang Y. Multiple Phase Regulation Enables Efficient and Bright Quasi-2D Perovskite Light-Emitting Diodes. NANO LETTERS 2023. [PMID: 37991828 DOI: 10.1021/acs.nanolett.3c03440] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
Quasi-2D perovskites, multiquantum well materials with the energy cascade structure, exhibit impressive optoelectronic properties and a wide range of applications in various optoelectronic devices. However, the insufficient exciton energy transfer caused by the excess of small-n phases that induce nonradiative recombination and the spatially random phase distribution that impedes charge transport severely inhibit the device performance of light-emitting diodes (LEDs). Here, a faster energy transfer process and efficient carrier recombination are achieved by introducing the multifunctional additive 2-(methylsulfonyl)-4-(trifluoromethyl)benzoic acid (MTA) to manipulate the crystallization process of perovskites. The introduction of MTA not only constrains the PEA and restrains the formation of small-n phases to improve the energy transfer process but also optimizes the crystal orientation to promote charge transport. As a result, highly efficient pure green quasi-2D perovskite LEDs with a peak EQE of 25.9%, a peak current efficiency of 108.1 cd A-1, and a maximum luminance of 288798 cd m-2 are achieved.
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Affiliation(s)
- Anqi Liu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Po Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Xiaomei Chai
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Yu Liu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Gangyun Guan
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Yanbo Gao
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Zhennan Wu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Junhua Hu
- Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Dingdi Wang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
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24
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Singh S, Nayak PK, Tretiak S, Ghosh D. Composition Dependent Strain Engineering of Lead-Free Halide Double Perovskite: Computational Insights. J Phys Chem Lett 2023; 14:9479-9489. [PMID: 37831811 DOI: 10.1021/acs.jpclett.3c02249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/15/2023]
Abstract
The critical photophysical properties of lead-free halide double perovskites (HDPs) must be substantially improved for various applications. In this regard, strain engineering is a powerful tool for enhancing optoelectronic performance with precise control. Here, we employ ab initio simulations to investigate the impact of mild compressive and tensile strains on the photophysics of Cs2AgB'X6 (B' = Sb, Bi; X = Cl, Br) perovskites. Depending on the pnictogen and halide atoms, the band gap and band edge positions of HDPs can be tuned to a significant extent by controlling the applied external strain. Cs2AgSbBr6 has the most substantial strain response under structural perturbations. The subtle electronic interactions among the participating orbitals and the band dispersion at the edge states are enhanced under compressive strain, reducing the carrier effective masses. The exciton binding energies for these Br-based HDPs are in the range 59-78 meV and weaken in the compressed lattices, suggesting improved free carrier generation. Overall, the study emphasizes the potential of lattice strain engineering to boost the photophysical properties of HDPs that can ultimately improve their optoelectronic performance.
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Affiliation(s)
- Sarika Singh
- Department of Chemistry, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi 110016, India
| | - Pabitra Kumar Nayak
- Department of Chemistry, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi 110016, India
| | - Sergei Tretiak
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Dibyajyoti Ghosh
- Department of Chemistry, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi 110016, India
- Department of Materials Science and Engineering, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi 110016, India
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25
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Lê K, Heshmati N, Mathur S. Potential and perspectives of halide perovskites in light emitting devices. NANO CONVERGENCE 2023; 10:47. [PMID: 37831205 PMCID: PMC10575846 DOI: 10.1186/s40580-023-00395-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2023] [Accepted: 09/13/2023] [Indexed: 10/14/2023]
Abstract
Light emitting diodes (LEDs) have become part of numerous electrical and electronic systems such as lighting, displays, status indicator lamps and wearable electronics. Owing to their excellent optoelectronic properties and deposition via simple solution process, metal halide perovskites possess unique potential for developing halide perovskite-based LEDs (PeLEDs) with superior photoluminescence efficiencies leading to external quantum efficiencies beyond 20% for PeLEDS. However, the limited durability, high operative voltages, and challenges of scale-up are persisting barriers in achieving required technology readiness levels. To build up the existing knowledge and raise the device performance this review provides a state-of-the-art study on the properties, film and device fabrication, efficiency, and stability of PeLEDs. In terms of commercialization, PeLEDs need to overcome materials and device challenges including stability, ion migration, phase segregation, and joule heating, which are discussed in this review. We hope, discussions about the strategies to overcome the stability issues and enhancement the materials intrinsic properties towards development more stable and efficient optoelectronic devices can pave the way for scalability and cost-effective production of PeLEDs.
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Affiliation(s)
- Khan Lê
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, 50939, Cologne, Germany
| | - Niusha Heshmati
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, 50939, Cologne, Germany
| | - Sanjay Mathur
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, 50939, Cologne, Germany.
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26
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Kim M, Ma KY, Kim H, Lee Y, Park JH, Shin HS. 2D Materials in the Display Industry: Status and Prospects. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205520. [PMID: 36539122 DOI: 10.1002/adma.202205520] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
With advances in flexible electronics, innovative foldable, rollable, and stretchable displays have been developed to maintain their performance under various deformations. These flexible devices can develop more innovative designs than conventional devices due to their light weight, high space efficiency, and practical convenience. However, developing flexible devices requires material innovation because the devices must be flexible and exhibit desirable electrical insulating/semiconducting/metallic properties. Recently, emerging 2D materials such as graphene, hexagonal boron nitride, and transition metal dichalcogenides have attracted considerable research attention because of their outstanding electrical, optical, and mechanical properties, which are ideal for flexible electronics. The recent progress and challenges of 2D material growth and display applications are reviewed and perspectives for exploring 2D materials for display applications are discussed.
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Affiliation(s)
- Minsu Kim
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Kyung Yeol Ma
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Hyeongjoon Kim
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Yeonju Lee
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | | | - Hyeon Suk Shin
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
- Low-Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
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27
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Polavarapu L, Loi MA, Zeng H, Luther JM. Introduction to halide perovskite optoelectronics. NANOSCALE 2023; 15:15075-15078. [PMID: 37712195 DOI: 10.1039/d3nr90170j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/16/2023]
Abstract
An introduction to the Nanoscale themed collection on halide perovskite nanomaterials for optoelectronic applications, featuring a variety of articles that highlight the latest developments to address ongoing challenges in the field.
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Affiliation(s)
- Lakshminarayana Polavarapu
- CINBIO, Materials Chemistry and Physics Group, University of Vigo, Campus Universitario Marcosende, Vigo 36310, Spain.
| | - Maria Antonietta Loi
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747 AG, The Netherlands.
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
| | - Joseph M Luther
- Chemistry & Nanoscience Center, National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
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28
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Hu M, Zhang Y, Meng N, Wang W, Lu Y, Dong J, Zhao S, Qiao B, Song D, Xu Z. Modulation Phase Distribution of Ruddlesden-Popper Quasi-2D Perovskites with a Similarly Spaced Dion-Jacobson Phase. ACS APPLIED MATERIALS & INTERFACES 2023; 15:42706-42716. [PMID: 37646254 DOI: 10.1021/acsami.3c03110] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
Quasi-two-dimensional (quasi-2D) perovskites exhibit excellent performance when applied to light-emitting diodes (LEDs). However, quasi-2D perovskite films generally have nonuniform n phases and irregular internal crystal structures, which degrade the device's performance. Here, we propose using a Dion-Jacobson (DJ)-type organic spacer to modulate the phase distribution of the Ruddlesden-Popper (RP) quasi-2D perovskite. A DJ-type organic spacer cation, 1.6-hexamethylenediamine (HDABr2), was introduced into the perovskite as the second spacer cation with propylamine hydrobromide (PABr). As DJ-type and RP-type perovskites have similar spacings, RP-DJ style does not cause a chaotic crystalline structure; instead, it modulates the perovskite crystallization and narrows the phase distribution. In parallel, there is a substantial improvement in the maximum luminance, current efficiency, external quantum efficiency, and device stability of the quasi-2D perovskite LEDs. This work provides a novel concept for combining the organic spacer cations for quasi-2D perovskites.
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Affiliation(s)
- Mengli Hu
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Yu Zhang
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Ning Meng
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Wei Wang
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Yao Lu
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Jie Dong
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Suling Zhao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Bo Qiao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Dandan Song
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Zheng Xu
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
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29
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Morana M, Kaiser W, Chiara R, Albini B, Meggiolaro D, Mosconi E, Galinetto P, De Angelis F, Malavasi L. Origin of Broad Emission Induced by Rigid Aromatic Ditopic Cations in Low-Dimensional Metal Halide Perovskites. J Phys Chem Lett 2023; 14:7860-7868. [PMID: 37638524 PMCID: PMC10494231 DOI: 10.1021/acs.jpclett.3c01872] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2023] [Accepted: 08/16/2023] [Indexed: 08/29/2023]
Abstract
The development of broadband emitters based on metal halide perovskites (MHPs) requires the elucidation of structure-emission property correlations. Herein, we report a combined experimental and theoretical study on a series of novel low-dimensional lead chloride perovskites, including ditopic aromatic cations. Synthesized lead chloride perovskites and their bromide analogues show both narrow and broad photoluminescence emission properties as a function of their cation and halide nature. Structural analysis shows a correlation between the rigidity of the ditopic cations and the lead halide octahedral distortions. Density functional theory calculations reveal, in turn, the pivotal role of octahedral distortions in the formation of self-trapped excitons, which are responsible for the insurgence of broad emission and large Stokes shifts together with a contribution of halide vacancies. For the considered MHP series, the use of conventional octahedral distortion parameters allows us to nicely describe the trend of emission properties, thus providing a solid guide for further materials design.
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Affiliation(s)
- Marta Morana
- Department
of Chemistry and INSTM, University of Pavia, Via Taramelli 16, Pavia 27100, Italy
| | - Waldemar Kaiser
- Computational
Laboratory for Hybrid/Organic Photovoltaics (CLHYO), Istituto CNR di Scienze e Tecnologie Chimiche “Giulio
Natta” (CNR-SCITEC), Perugia 06123, Italy
| | - Rossella Chiara
- Department
of Chemistry and INSTM, University of Pavia, Via Taramelli 16, Pavia 27100, Italy
| | - Benedetta Albini
- Department
of Physics, University of Pavia, Via Bassi 6, Pavia 27100, Italy
| | - Daniele Meggiolaro
- Computational
Laboratory for Hybrid/Organic Photovoltaics (CLHYO), Istituto CNR di Scienze e Tecnologie Chimiche “Giulio
Natta” (CNR-SCITEC), Perugia 06123, Italy
| | - Edoardo Mosconi
- Computational
Laboratory for Hybrid/Organic Photovoltaics (CLHYO), Istituto CNR di Scienze e Tecnologie Chimiche “Giulio
Natta” (CNR-SCITEC), Perugia 06123, Italy
| | - Pietro Galinetto
- Department
of Physics, University of Pavia, Via Bassi 6, Pavia 27100, Italy
| | - Filippo De Angelis
- Computational
Laboratory for Hybrid/Organic Photovoltaics (CLHYO), Istituto CNR di Scienze e Tecnologie Chimiche “Giulio
Natta” (CNR-SCITEC), Perugia 06123, Italy
- Department
of Chemistry, Biology and Biotechnology, University of Perugia and INSTM, Perugia 06123, Italy
- SKKU
Institute of Energy Science and Technology (SIEST) Sungkyunkwan University, Suwon 440-746, Korea
| | - Lorenzo Malavasi
- Department
of Chemistry and INSTM, University of Pavia, Via Taramelli 16, Pavia 27100, Italy
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30
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Lu P, Li T, Lu M, Ruan C, Sun S, Wu Z, Zhong Y, Zhang F, Gao Y, Huang Y, Wang Y, Hu J, Yan F, Zhang Y. Enrichment of anchoring sites by introducing supramolecular halogen bonds for the efficient perovskite nanocrystal LEDs. LIGHT, SCIENCE & APPLICATIONS 2023; 12:215. [PMID: 37666825 PMCID: PMC10477334 DOI: 10.1038/s41377-023-01266-4] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2023] [Revised: 07/28/2023] [Accepted: 08/18/2023] [Indexed: 09/06/2023]
Abstract
Considering the multi-functionalization of ligands, it is crucial for ligand molecular design to reveal the landscape of anchoring sites. Here, a typical triphenylphosphine (TPP) ligand was employed to explore its effect on the surface of CsPbI3 perovskite nanocrystals (PNCs). Except for the conventionally considered P-Pb coordination, an P-I supramolecular halogen bonding was also found on the NC surface. The coexistence of the above two types of bonding significantly increased the formation energy of iodine vacancy defects and improved the photoluminescence quantum yield of PNCs up to 93%. Meanwhile, the direct interaction of P and I enhanced the stability of the Pb-I octahedra and dramatically inhibited the migration of I ions. Furthermore, the introduction of additional benzene rings (2-(Diphenylphosphino)-biphenyl (DPB)) increased the delocalized properties of the PNC surface and significantly improved the charge transport of the PNCs. As a result, the DPB passivated CsPbI3 NCs based top-emitting LEDs exhibite a peak external quantum efficiency (EQE) of 22.8%, a maximum luminance of 15, 204 cd m-2, and an extremely low-efficiency roll-off of 2.6% at the current density of 500 mA cm-2.
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Affiliation(s)
- Po Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Ting Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China.
| | - Cheng Ruan
- Changchun Cedar Electronics Technology Co., Ltd., Changchun, China
| | - Siqi Sun
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Zhennan Wu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Yuan Zhong
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Fujun Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Yanbo Gao
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Yaowei Huang
- Changchun Cedar Electronics Technology Co., Ltd., Changchun, China
| | - Yang Wang
- Changchun Cedar Electronics Technology Co., Ltd., Changchun, China.
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
| | - Junhua Hu
- Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering, Zhengzhou University, Zhengzhou, China
| | - Fengping Yan
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, China.
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China.
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31
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Lin Y, Chen C, Wang Y, Yu M, Yang J, Ni I, Lin B, Zhidkov IS, Kurmaev EZ, Lu Y, Chueh C. Realizing High Brightness Quasi-2D Perovskite Light-Emitting Diodes with Reduced Efficiency Roll-Off via Multifunctional Interface Engineering. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302232. [PMID: 37400366 PMCID: PMC10502845 DOI: 10.1002/advs.202302232] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Revised: 06/21/2023] [Indexed: 07/05/2023]
Abstract
Quasi-2D perovskites have recently flourished in the field of luminescence due to the quantum-confinement effect and the efficient energy transfer between different n phases resulting in exceptional optical properties. However, owing to the lower conductivity and poor charge injection, quasi-2D perovskite light-emitting diodes (PeLEDs) typically suffer from low brightness and high-efficiency roll-off at high current densities compared to 3D perovskite-based PeLEDs, which is undoubtedly one of the most critical issues in this field. In this work, quasi-2D PeLEDs with high brightness, reduced trap density, and low-efficiency roll-off are successfully demonstrated by introducing a thin layer of conductive phosphine oxide at the perovskite/electron transport layer interface. The results surprisingly show that this additional layer does not improve the energy transfer between multiple quasi-2D phases in the perovskite film, but purely improves the electronic properties of the perovskite interface. On the one hand, it passivates the surface defects of the perovskite film; on the other hand, it promotes electron injection and prevents hole leakage across this interface. As a result, the modified quasi-2D pure Cs-based device shows a maximum brightness of > 70,000 cd m-2 (twice that of the control device), a maximum external quantum efficiency (EQE) of > 10% and a much lower efficiency roll-off at high bias voltages.
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Affiliation(s)
- Yu‐Kuan Lin
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
| | - Chiung‐Han Chen
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
| | - Yen‐Yu Wang
- Research Center for Applied SciencesAcademia SinicaTaipei11529Taiwan
| | - Ming‐Hsuan Yu
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
| | - Jing‐Wei Yang
- Research Center for Applied SciencesAcademia SinicaTaipei11529Taiwan
| | - I‐Chih Ni
- Graduate Institute of Photonics and OptoelectronicsNational Taiwan UniversityTaipei10617Taiwan
| | - Bi‐Hsuan Lin
- National Synchrotron Radiation Research CenterHsinchu30076Taiwan
| | - Ivan S. Zhidkov
- Institute of Physics and TechnologyUral Federal UniversityYekaterinburg620002Russia
- M. N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of SciencesYekaterinburg620108Russia
| | - Ernst Z. Kurmaev
- Institute of Physics and TechnologyUral Federal UniversityYekaterinburg620002Russia
- M. N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of SciencesYekaterinburg620108Russia
| | - Yu‐Jung Lu
- Research Center for Applied SciencesAcademia SinicaTaipei11529Taiwan
- Department of PhysicsNational Taiwan UniversityTaipei10617Taiwan
| | - Chu‐Chen Chueh
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
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32
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Liu Y, Wang S, Yu Z, Chen G, Wang C, Wang T, Ke W, Fang G. A Multifunctional Additive Strategy Enables Efficient Pure-Blue Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302161. [PMID: 37168009 DOI: 10.1002/adma.202302161] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2023] [Revised: 04/22/2023] [Indexed: 05/13/2023]
Abstract
Lead halide perovskites have shown exceptional performance in light-emitting devices (PeLEDs), particularly in producing significant electroluminescence in sky-blue to near-infrared wavelengths. However, PeLEDs emitting pure-blue light at 465-475 nm are still not satisfactory. Herein, efficient and stable pure-blue PeLEDs are reported by controlling phase distribution, passivation of defects, as well as surface modifications using multifunctional phenylethylammonium trifluoroacetate (PEATFA) in reduced-dimensional p-F-PEA2 Csn-1 Pbn (Br0.55 Cl0.45 )3n+1 polycrystalline perovskite films. Compared with 4-fluorophenylethylammonium (p-F-PEA+ ) in the pristine films, phenylethylammonium (PEA+ ) has lower adsorption energy while interacting with perovskites, resulting in large-n low-dimensional perovskites, which can greatly facilitate charge transport within the low-dimensional perovskite films. The interaction between the CO group in trifluoroacetate (TFA- ) and perovskites significantly reduces defects in the perovskite films. Additionally, the electron-giving CF3 group in TFA- uplifts surface potential in the films, resulting in smooth electronic injection in devices. The multifunctional additive strategy leads to elevated radiative recombination and efficient carrier transport in the films and devices. As a result, the devices exhibit a maximum external quantum efficiency (EQE) of 11.87% at 468 nm with stable spectral output, the highest reported to date for pure-blue PeLEDs. Thus, this study extends the way for high-efficiency pure-blue LED with perovskite polycrystal films.
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Affiliation(s)
- Yongjie Liu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Shuxin Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhiqiu Yu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Guoyi Chen
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Cheng Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ti Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Weijun Ke
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Guojia Fang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
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33
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Kebede T, Abebe M, Mani D, Paduvilan JK, Thottathi L, Thankappan A, Thomas S, Kamangar S, Shaik AS, Badruddin IA, Aga FG, Kim JY. Phase Behavior and Role of Organic Additives for Self-Doped CsPbI 3 Perovskite Semiconductor Thin Films. MICROMACHINES 2023; 14:1601. [PMID: 37630137 PMCID: PMC10456489 DOI: 10.3390/mi14081601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Revised: 08/09/2023] [Accepted: 08/09/2023] [Indexed: 08/27/2023]
Abstract
The phase change of all-inorganic cesium lead halide (CsPbI3) thin film from yellow δ-phase to black γ-/α-phase has been a topic of interest in the perovskite optoelectronics field. Here, the main focus is how to secure a black perovskite phase by avoiding a yellow one. In this work, we fabricated a self-doped CsPbI3 thin film by incorporating an excess cesium iodide (CsI) into the perovskite precursor solution. Then, we studied the effect of organic additive such as 1,8-diiodooctane (DIO), 1-chloronaphthalene (CN), and 1,8-octanedithiol (ODT) on the optical, structural, and morphological properties. Specifically, for elucidating the binary additive-solvent solution thermodynamics, we employed the Flory-Huggins theory based on the oligomer level of additives' molar mass. Resultantly, we found that the miscibility of additive-solvent displaying an upper critical solution temperature (UCST) behavior is in the sequence CN:DMF > ODT:DMF > DIO:DMF, the trends of which could be similarly applied to DMSO. Finally, the self-doping strategy with additive engineering should help fabricate a black γ-phase perovskite although the mixed phases of δ-CsPbI3, γ-CsPbI3, and Cs4PbI6 were observed under ambient conditions. However, the results may provide insight for the stability of metastable γ-phase CsPbI3 at room temperature.
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Affiliation(s)
- Tamiru Kebede
- Faculty of Materials Science and Engineering, Jimma Institute of Technology, Jimma University, Jimma P.O. Box 378, Ethiopia; (T.K.); (M.A.); (D.M.)
- Department of Physics, College of Natural and Computational Science, Bonga University, Bonga P.O. Box 334, Ethiopia
| | - Mulualem Abebe
- Faculty of Materials Science and Engineering, Jimma Institute of Technology, Jimma University, Jimma P.O. Box 378, Ethiopia; (T.K.); (M.A.); (D.M.)
| | - Dhakshnamoorthy Mani
- Faculty of Materials Science and Engineering, Jimma Institute of Technology, Jimma University, Jimma P.O. Box 378, Ethiopia; (T.K.); (M.A.); (D.M.)
| | | | - Lishin Thottathi
- Department of Physics and Mathematics, Università Cattolica del Sacro Cuore, Via della Garzetta, 48, 25133 Brescia, BS, Italy;
| | | | - Sabu Thomas
- School of Energy Materials, Mahatma Gandhi University, Kottayam 686560, India;
| | - Sarfaraz Kamangar
- Mechanical Engineering Department, College of Engineering, King Khalid University, Abha 61421, Saudi Arabia; (S.K.); (A.S.S.); (I.A.B.)
| | - Abdul Saddique Shaik
- Mechanical Engineering Department, College of Engineering, King Khalid University, Abha 61421, Saudi Arabia; (S.K.); (A.S.S.); (I.A.B.)
| | - Irfan Anjum Badruddin
- Mechanical Engineering Department, College of Engineering, King Khalid University, Abha 61421, Saudi Arabia; (S.K.); (A.S.S.); (I.A.B.)
| | - Fekadu Gochole Aga
- Department of Materials Science and Engineering, Adama Science and Technology University, Adama P.O. Box 1888, Ethiopia;
- Center of Advanced Materials Science and Engineering, Adama Science and Technology University, Adama P.O. Box 1888, Ethiopia
| | - Jung Yong Kim
- Department of Materials Science and Engineering, Adama Science and Technology University, Adama P.O. Box 1888, Ethiopia;
- Center of Advanced Materials Science and Engineering, Adama Science and Technology University, Adama P.O. Box 1888, Ethiopia
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34
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Stanton R, Trivedi DJ. Pyrovskite: A software package for the high-throughput construction, analysis, and featurization of two- and three-dimensional perovskite systems. J Chem Phys 2023; 159:064803. [PMID: 37555613 DOI: 10.1063/5.0159407] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 07/24/2023] [Indexed: 08/10/2023] Open
Abstract
The increased computational and experimental interest in perovskite systems comprising novel phases and reduced dimensionality has greatly expanded the search space for this class of materials. In similar fields, unified frameworks exist for the procedural generation and subsequent analysis of these complex condensed matter systems. Given the relatively recent rise in popularity of these novel perovskite phases, such a framework is yet to be created. In this work, we introduce Pyrovskite, an open source software package, to aid in both the high-throughput and fine-grained generation, simulation, and subsequent analysis of this expanded family of perovskite systems. Additionally, we introduce a new descriptor for octahedral distortions in systems, including, but not limited to, perovskites. This descriptor quantifies diagonal displacements of the B-site cation in a BX6 octahedral coordination environment, which has been shown to contribute to increased Rashba-Dresselhaus splitting in perovskite systems.
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Affiliation(s)
- Robert Stanton
- Department of Physics, Clarkson University, Potsdam, New York 13699, USA
| | - Dhara J Trivedi
- Department of Physics, Clarkson University, Potsdam, New York 13699, USA
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35
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Metcalf I, Sidhik S, Zhang H, Agrawal A, Persaud J, Hou J, Even J, Mohite AD. Synergy of 3D and 2D Perovskites for Durable, Efficient Solar Cells and Beyond. Chem Rev 2023; 123:9565-9652. [PMID: 37428563 DOI: 10.1021/acs.chemrev.3c00214] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/11/2023]
Abstract
Three-dimensional (3D) organic-inorganic lead halide perovskites have emerged in the past few years as a promising material for low-cost, high-efficiency optoelectronic devices. Spurred by this recent interest, several subclasses of halide perovskites such as two-dimensional (2D) halide perovskites have begun to play a significant role in advancing the fundamental understanding of the structural, chemical, and physical properties of halide perovskites, which are technologically relevant. While the chemistry of these 2D materials is similar to that of the 3D halide perovskites, their layered structure with a hybrid organic-inorganic interface induces new emergent properties that can significantly or sometimes subtly be important. Synergistic properties can be realized in systems that combine different materials exhibiting different dimensionalities by exploiting their intrinsic compatibility. In many cases, the weaknesses of each material can be alleviated in heteroarchitectures. For example, 3D-2D halide perovskites can demonstrate novel behavior that neither material would be capable of separately. This review describes how the structural differences between 3D halide perovskites and 2D halide perovskites give rise to their disparate materials properties, discusses strategies for realizing mixed-dimensional systems of various architectures through solution-processing techniques, and presents a comprehensive outlook for the use of 3D-2D systems in solar cells. Finally, we investigate applications of 3D-2D systems beyond photovoltaics and offer our perspective on mixed-dimensional perovskite systems as semiconductor materials with unrivaled tunability, efficiency, and technologically relevant durability.
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Affiliation(s)
- Isaac Metcalf
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Siraj Sidhik
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Hao Zhang
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, Texas 77005, United States
| | - Ayush Agrawal
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
| | - Jessica Persaud
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
| | - Jin Hou
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Jacky Even
- Université de Rennes, INSA Rennes, CNRS, Institut FOTON - UMR 6082, 35708 Rennes, France
| | - Aditya D Mohite
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, Texas 77005, United States
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36
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Yu W, Wei M, Tang Z, Zou H, Li L, Zou Y, Yang S, Wang Y, Zhang Y, Li X, Guo H, Wu C, Qu B, Gao Y, Lu G, Wang S, Chen Z, Liu Z, Zhou H, Wei B, Liao Y, Zhang L, Li Y, Gong Q, Sargent EH, Xiao L. Separating Crystal Growth from Nucleation Enables the In Situ Controllable Synthesis of Nanocrystals for Efficient Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301114. [PMID: 37314026 DOI: 10.1002/adma.202301114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2023] [Revised: 06/02/2023] [Indexed: 06/15/2023]
Abstract
Colloidal perovskite nanocrystals (PNCs) display bright luminescence for light-emitting diode (LED) applications; however, they require post-synthesis ligand exchange that may cause surface degradation and defect formation. In situ-formed PNCs achieve improved surface passivation using a straightforward synthetic approach, but their LED performance at the green wavelength is not yet comparable with that of colloidal PNC devices. Here, it is found that the limitations of in situ-formed PNCs stem from uncontrolled formation kinetics: conventional surface ligands confine perovskite nuclei but fail to delay crystal growth. A bifunctional carboxylic-acid-containing ammonium hydrobromide ligand that separates crystal growth from nucleation is introduced, leading to the formation of quantum-confined PNC solids exhibiting a narrow size distribution. Controlled crystallization is further coupled with defect passivation using deprotonated phosphinates, enabling improvements in photoluminescence quantum yield to near unity. Green LEDs are fabricated with a maximum current efficiency of 109 cd A-1 and an average external quantum efficiency of 22.5% across 25 devices, exceeding the performance of their colloidal PNC-based counterparts. A 45.6 h operating half-time is further documented for an unencapsulated device in N2 with an initial brightness of 100 cd m-2 .
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Affiliation(s)
- Wenjin Yu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Mingyang Wei
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON, M5S 3G4, Canada
| | - Zhenyu Tang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Hongshuai Zou
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials and School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Liang Li
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yu Zou
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Shuang Yang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Yunkun Wang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Yuqing Zhang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Xiangdong Li
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Haoqing Guo
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Cuncun Wu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Bo Qu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Yunan Gao
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Guowei Lu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Shufeng Wang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010, P. R. China
| | - Zhijian Chen
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
| | - Zhiwei Liu
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Huanping Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Bin Wei
- Key Laboratory of Advanced Display and System Applications, Shanghai University, Shanghai, 200072, P. R. China
| | - Yingjie Liao
- Key Laboratory of Advanced Display and System Applications, Shanghai University, Shanghai, 200072, P. R. China
| | - Lijun Zhang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials and School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Yan Li
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010, P. R. China
| | - Qihuang Gong
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010, P. R. China
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON, M5S 3G4, Canada
| | - Lixin Xiao
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, P. R. China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010, P. R. China
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37
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Li W, Li T, Tong Y, Qi H, Zhang Y, Guo Y, Wang H, Wang H, Wang K, Wang H. Fabrication of Highly Luminescent Quasi Two-Dimensional CsPbBr 3 Perovskite Films in High Humidity Air for Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37467461 DOI: 10.1021/acsami.3c07140] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
Perovskite light-emitting diodes (LEDs) have attracted extensive attention in recent years due to their outstanding performance and promise in lighting and display applications. However, the fabrication of perovskite LEDs usually requires a low-humidity atmosphere, which is unfavorable for industrial production. Herein, we report an effective strategy to fabricate highly luminescent quasi two-dimensional CsPbBr3 perovskite films in an ambient atmosphere with a humidity up to 60%. We reveal that the hole transport layer (HTL) plays a significant role in the morphology and optical properties of the perovskite films. Using hydrophobic self-assembled monolayer materials as HTLs can remarkably improve the quality of the perovskite films processed in high humidity air. The resultant perovskite LEDs show reduced leakage current and significantly enhanced performance. Furthermore, surface treatment is conducted to prevent water invasion and promote radiative recombination in perovskite films and LEDs. Eventually, the perovskite LEDs exhibit bright green emission with an external quantum efficiency of 4.87%. The present work provides a feasible pathway to overcome the humidity limitation for obtaining bright perovskite films and LEDs, which would contribute to further reducing the fabrication cost of perovskite LEDs and promoting their applications.
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Affiliation(s)
- Wan Li
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an 710072, China
| | - Tianxiang Li
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an 710072, China
| | - Yu Tong
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an 710072, China
| | - Heng Qi
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an 710072, China
| | - Youqian Zhang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an 710072, China
| | - Yangyang Guo
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an 710072, China
| | - Hao Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an 710072, China
| | - Hongyue Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an 710072, China
| | - Kun Wang
- School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, China
- Shenzhen Research Institute of Northwestern Polytechnical University, Shenzhen 518057, China
| | - Hongqiang Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an 710072, China
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38
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Zhang L, Mei L, Wang K, Lv Y, Zhang S, Lian Y, Liu X, Ma Z, Xiao G, Liu Q, Zhai S, Zhang S, Liu G, Yuan L, Guo B, Chen Z, Wei K, Liu A, Yue S, Niu G, Pan X, Sun J, Hua Y, Wu WQ, Di D, Zhao B, Tian J, Wang Z, Yang Y, Chu L, Yuan M, Zeng H, Yip HL, Yan K, Xu W, Zhu L, Zhang W, Xing G, Gao F, Ding L. Advances in the Application of Perovskite Materials. NANO-MICRO LETTERS 2023; 15:177. [PMID: 37428261 PMCID: PMC10333173 DOI: 10.1007/s40820-023-01140-3] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 05/29/2023] [Indexed: 07/11/2023]
Abstract
Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.
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Affiliation(s)
- Lixiu Zhang
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Luyao Mei
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China
| | - Kaiyang Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, 518055, People's Republic of China
| | - Yinhua Lv
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Shuai Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Yaxiao Lian
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Xiaoke Liu
- Department of Physics, Linköping University, 58183, Linköping, Sweden
| | - Zhiwei Ma
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Guanjun Xiao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Qiang Liu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China
| | - Shuaibo Zhai
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, People's Republic of China
| | - Shengli Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Gengling Liu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Ligang Yuan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Bingbing Guo
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Ziming Chen
- Department of Chemistry, Imperial College London, London, W12 0BZ, UK
| | - Keyu Wei
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Aqiang Liu
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Shizhong Yue
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Guangda Niu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
| | - Xiyan Pan
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Jie Sun
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yong Hua
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Wu-Qiang Wu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Dawei Di
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Baodan Zhao
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Zhijie Wang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Yang Yang
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Liang Chu
- School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China
| | - Mingjian Yuan
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Haibo Zeng
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Hin-Lap Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, People's Republic of China
| | - Keyou Yan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Wentao Xu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China.
| | - Lu Zhu
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China.
| | - Wenhua Zhang
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China.
| | - Guichuan Xing
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, People's Republic of China.
| | - Feng Gao
- Department of Physics, Linköping University, 58183, Linköping, Sweden.
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
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39
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Nguyen HA, Dixon G, Dou FY, Gallagher S, Gibbs S, Ladd DM, Marino E, Ondry JC, Shanahan JP, Vasileiadou ES, Barlow S, Gamelin DR, Ginger DS, Jonas DM, Kanatzidis MG, Marder SR, Morton D, Murray CB, Owen JS, Talapin DV, Toney MF, Cossairt BM. Design Rules for Obtaining Narrow Luminescence from Semiconductors Made in Solution. Chem Rev 2023. [PMID: 37311205 DOI: 10.1021/acs.chemrev.3c00097] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Solution-processed semiconductors are in demand for present and next-generation optoelectronic technologies ranging from displays to quantum light sources because of their scalability and ease of integration into devices with diverse form factors. One of the central requirements for semiconductors used in these applications is a narrow photoluminescence (PL) line width. Narrow emission line widths are needed to ensure both color and single-photon purity, raising the question of what design rules are needed to obtain narrow emission from semiconductors made in solution. In this review, we first examine the requirements for colloidal emitters for a variety of applications including light-emitting diodes, photodetectors, lasers, and quantum information science. Next, we will delve into the sources of spectral broadening, including "homogeneous" broadening from dynamical broadening mechanisms in single-particle spectra, heterogeneous broadening from static structural differences in ensemble spectra, and spectral diffusion. Then, we compare the current state of the art in terms of emission line width for a variety of colloidal materials including II-VI quantum dots (QDs) and nanoplatelets, III-V QDs, alloyed QDs, metal-halide perovskites including nanocrystals and 2D structures, doped nanocrystals, and, finally, as a point of comparison, organic molecules. We end with some conclusions and connections, including an outline of promising paths forward.
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Affiliation(s)
- Hao A Nguyen
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Grant Dixon
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Florence Y Dou
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Shaun Gallagher
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Stephen Gibbs
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Dylan M Ladd
- Department of Materials Science and Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Emanuele Marino
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Dipartimento di Fisica e Chimica, Università degli Studi di Palermo, Via Archirafi 36, 90123 Palermo, Italy
| | - Justin C Ondry
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - James P Shanahan
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Eugenia S Vasileiadou
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Stephen Barlow
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Daniel R Gamelin
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - David S Ginger
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - David M Jonas
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Mercouri G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Seth R Marder
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Department of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Daniel Morton
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Christopher B Murray
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jonathan S Owen
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Dmitri V Talapin
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Michael F Toney
- Department of Materials Science and Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Department of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Brandi M Cossairt
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
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40
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Prabhakaran A, Dhanabalan B, Andrusenko I, Pianetti A, Lauciello S, Prato M, Marras S, Solokha P, Gemmi M, Brovelli S, Manna L, Arciniegas MP. Stable Sn-Based Hybrid Perovskite-Related Structures with Tunable Color Coordinates via Organic Cations in Low-Temperature Synthesis. ACS ENERGY LETTERS 2023; 8:2630-2640. [PMID: 37324542 PMCID: PMC10262684 DOI: 10.1021/acsenergylett.3c00791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/16/2023] [Accepted: 05/11/2023] [Indexed: 06/17/2023]
Abstract
Organic-inorganic Pb-free layered perovskites are efficient broadband emitters and thus are promising materials for lighting applications. However, their synthetic protocols require a controlled atmosphere, high temperature, and long preparation time. This hinders the potential tunability of their emission through organic cations, as is instead common practice in Pb-based structures. Here, we present a set of Sn-Br layered perovskite-related structures that display different chromaticity coordinates and photoluminescence quantum yield (PLQY) up to 80%, depending on the choice of the organic monocation. We first develop a synthetic protocol that is performed under air and at 4 °C, requiring only a few steps. X-ray and 3D electron diffraction analyses show that the structures exhibit diverse octahedra connectivity (disconnected and face-sharing) and thus optical properties, while preserving the organic-inorganic layer intercalation. These results provide key insight into a previously underexplored strategy to tune the color coordinates of Pb-free layered perovskites through organic cations with complex molecular configurations.
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Affiliation(s)
- Aarya Prabhakaran
- Center
for Convergent Technologies, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, Via Dodecaneso, 31, 16146 Genova, Italy
| | - Balaji Dhanabalan
- Center
for Convergent Technologies, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Iryna Andrusenko
- Electron
Crystallography, Center for Materials Interfaces, Istituto Italiano di Tecnologia, Viale Rinaldo Piaggio 34, 56025 Pontedera, Italy
| | - Andrea Pianetti
- Dipartimento
di Scienza dei Materiali, Università
degli Studi di Milano-Bicocca, via R. Cozzi 55, 20125 Milano, Italy
| | - Simone Lauciello
- Center
for Convergent Technologies, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Mirko Prato
- Center
for Convergent Technologies, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Sergio Marras
- Center
for Convergent Technologies, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Pavlo Solokha
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, Via Dodecaneso, 31, 16146 Genova, Italy
| | - Mauro Gemmi
- Electron
Crystallography, Center for Materials Interfaces, Istituto Italiano di Tecnologia, Viale Rinaldo Piaggio 34, 56025 Pontedera, Italy
| | - Sergio Brovelli
- Dipartimento
di Scienza dei Materiali, Università
degli Studi di Milano-Bicocca, via R. Cozzi 55, 20125 Milano, Italy
| | - Liberato Manna
- Center
for Convergent Technologies, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Milena P. Arciniegas
- Center
for Convergent Technologies, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
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41
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Jang CH, Kim YI, Harit AK, Ha JM, Park S, Noh YW, Lee AY, Kim KS, Jung JW, Woo HY, Song MH. Multifunctional Conjugated Molecular Additives for Highly Efficient Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210511. [PMID: 36930970 DOI: 10.1002/adma.202210511] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2022] [Revised: 02/13/2023] [Indexed: 06/16/2023]
Abstract
Further optimization of perovskite light-emitting diodes (PeLEDs) is impeded by crystal deformation caused by residual stress and defect formation with subsequent non-radiative recombination. Molecular additives for defect passivation are widely studied; however, the majority have insulating properties that hinder charge injection and transport. Herein, highly efficient green-emitting PeLEDs are reported by introducing semiconducting molecular additives (Fl-OEGA and Fl-C8A). Transmission electron microscopy shows that conjugated additives exist primarily at the grain boundaries of perovskite, and Kelvin probe force microscopy confirms that the variation in contact potential difference between grain boundaries and perovskite crystal domains is significantly reduced. The residual tensile stress is reduced by 13% and the activation energy for ion migration increases in the Fl-OEGA-treated perovskite film, compared to those of the film without additives. Compared to insulating 2,2'-(ethylenedioxy)diethylamine (EDEA), the introduction of semiconducting additives prevents a significant reduction in the charge-transport capability. Furthermore, the PeLEDs with Fl-OEGA show a negligible shift in the turn-on voltage and a significantly smaller decrease in the current density with increasing Fl-OEGA compared to the devices with EDEA. Finally, the 3D CsPbBr3 -PeLEDs show the highest external quantum efficiency of 21.3% by the incorporation of semiconducting Fl-OEGA as a new multifunctional additive.
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Affiliation(s)
- Chung Hyeon Jang
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Ye In Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Amit Kumar Harit
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Jung Min Ha
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Sejeong Park
- Korea I. T. S, Application Group, Korea I. T. S. Co., Ltd., Seoul, 06373, Republic of Korea
| | - Young Wook Noh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Ah-Young Lee
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kyeong Su Kim
- Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Yongin-si, 446-701, Republic of Korea
| | - Jae Woong Jung
- Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Yongin-si, 446-701, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Myoung Hoon Song
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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42
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Gunnarsson WB, Roh K, Zhao L, Murphy JP, Grede AJ, Giebink NC, Rand BP. Toward Nonepitaxial Laser Diodes. Chem Rev 2023. [PMID: 37219995 DOI: 10.1021/acs.chemrev.2c00721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Thin-film organic, colloidal quantum dot, and metal halide perovskite semiconductors are all being pursued in the quest for a wavelength-tunable diode laser technology that does not require epitaxial growth on a traditional semiconductor substrate. Despite promising demonstrations of efficient light-emitting diodes and low-threshold optically pumped lasing in each case, there are still fundamental and practical barriers that must be overcome to reliably achieve injection lasing. This review outlines the historical development and recent advances of each material system on the path to a diode laser. Common challenges in resonator design, electrical injection, and heat dissipation are highlighted, as well as the different optical gain physics that make each system unique. The evidence to date suggests that continued progress for organic and colloidal quantum dot laser diodes will likely hinge on the development of new materials or indirect pumping schemes, while improvements in device architecture and film processing are most critical for perovskite lasers. In all cases, systematic progress will require methods that can quantify how close new devices get with respect to their electrical lasing thresholds. We conclude by discussing the current status of nonepitaxial laser diodes in the historical context of their epitaxial counterparts, which suggests that there is reason to be optimistic for the future.
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Affiliation(s)
- William B Gunnarsson
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Kwangdong Roh
- Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Lianfeng Zhao
- Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina 29634, United States
| | - John P Murphy
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Alex J Grede
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Noel C Giebink
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Barry P Rand
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
- Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544, United States
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43
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Dewan S, Khanikar PD, Mudgal R, Singh A, Muduli PK, Singh R, Das S. Large-Area GeSe Realized Using Pulsed Laser Deposition for Ultralow-Noise and Ultrafast Broadband Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37216628 DOI: 10.1021/acsami.3c02522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Here, we report on the comprehensive growth, characterization, and optoelectronic application of large-area, two-dimensional germanium selenide (GeSe) layers prepared using the pulsed laser deposition (PLD) technique. Back-gated phototransistors based on few-layered 2D GeSe have been fabricated on a SiO2/Si substrate for ultrafast, low noise, and broadband light detection, showing spectral functionalities over a broad wavelength range of 0.4-1.5 μm. The broadband detection capabilities of the device have been attributed to the self-assembled GeOx/GeSe heterostructure and sub-bandgap absorption in GeSe. Besides a high photoresponsivity of 25 AW-1, the GeSe phototransistor displayed a high external quantum efficiency of the order of 6.14 × 103%, a maximum specific detectivity of 4.16 × 1010 Jones, and an ultralow noise equivalent power of 0.09 pW/Hz1/2. The detector has an ultrafast response/recovery time of 3.2/14.9 μs and can show photoresponse up to a high cut-off frequency of 150 kHz. These promising device parameters exhibited by PLD-grown GeSe layers-based detectors make it a favorable choice against present-day mainstream van der Waals semiconductors with limited scalability and optoelectronic compatibility in the visible-to-infrared spectral range.
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Affiliation(s)
- Sheetal Dewan
- School of Interdisciplinary Research, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Prabal Dweep Khanikar
- University of Queensland-IIT Delhi Academy of Research (UQIDAR), Hauz Khas, New Delhi 110016, India
- Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Richa Mudgal
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Avneet Singh
- Department of Physics, Shivaji College, University of Delhi, New Delhi 110027, India
| | - Pranaba Kishor Muduli
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Rajendra Singh
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Samaresh Das
- Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
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44
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Liu L, Piao J, Wang Y, Liu C, Chen J, Cao K, Chen S. Trifunctional Trichloroacetic Acid Incorporated Mixed-Halide Perovskites for Spectrally Stable Blue Light-Emitting Diodes. J Phys Chem Lett 2023; 14:4734-4741. [PMID: 37184086 DOI: 10.1021/acs.jpclett.3c01028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Metal halide perovskites have won great recognition in light-emitting diodes (LEDs). Nevertheless, the development of blue perovskite LEDs is facing a bottleneck in improving the device performance. Although mixed chloride/bromide perovskites can achieve pure-blue emission straightforwardly, higher chloride content will induce the challenges of low photoluminescence quantum yield and poor spectra stability resulting from the chloride vacancy defects and resultant halide ion migration under an electric field. In this work, we introduce a reliable trifunctional additive trichloroacetic acid into mixed-halide perovskites, which can provide additional chloride to fill halide vacancies, passivate the uncoordinated Pb2+ ion defects, and promote the crystallization effectively. Owning to the utilization of trichloroacetic acid, the ultimate pure-blue perovskite LED obtains stable electroluminescent spectra at 477 nm under various bias and demonstrates a 5-fold external quantum efficiency improvement (up to 6.6%).
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Affiliation(s)
- Lihui Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Junxian Piao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Yun Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Chenxi Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Jian Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Kun Cao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Shufen Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
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45
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Yang F, Zeng Q, Dong W, Kang C, Qu Z, Zhao Y, Wei H, Zheng W, Zhang X, Yang B. Rational adjustment to interfacial interaction with carbonized polymer dots enabling efficient large-area perovskite light-emitting diodes. LIGHT, SCIENCE & APPLICATIONS 2023; 12:119. [PMID: 37188664 DOI: 10.1038/s41377-023-01150-1] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2023] [Revised: 04/07/2023] [Accepted: 04/09/2023] [Indexed: 05/17/2023]
Abstract
Film uniformity of solution-processed layers is the cornerstone of large-area perovskite light-emitting diodes, which is often determined by the 'coffee-ring effect'. Here we demonstrate a second factor that cannot be ignored is the solid-liquid interface interaction between substrate and precursor and can be optimized to eliminate rings. A perovskite film with rings can be formed when cations dominate the solid-liquid interface interaction; whereas smooth and homogeneous perovskite emitting layers are generated when anions and anion groups dominate the interaction. This is due to the fact that the type of ions anchored to the substrate can determine how the subsequent film grows. This interfacial interaction is adjusted using carbonized polymer dots, who also orient the perovskite crystals and passivate their buried traps, enabling a 225 mm2 large-area perovskite light-emitting diode with a high efficiency of 20.2%.
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Affiliation(s)
- Fan Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Qingsen Zeng
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Wei Dong
- Department of Materials Science, Key Laboratory of Mobile Materials MOE, State Key Laboratory of Automotive Simulation and Control, Jilin University, Changchun, 130012, China
| | - Chunyuan Kang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Zexing Qu
- Institute of Theoretical Chemistry and Laboratory of Theoretical & Computational Chemistry, Jilin University, Changchun, 130023, China
| | - Yue Zhao
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Haotong Wei
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Weitao Zheng
- Department of Materials Science, Key Laboratory of Mobile Materials MOE, State Key Laboratory of Automotive Simulation and Control, Jilin University, Changchun, 130012, China
| | - Xiaoyu Zhang
- Department of Materials Science, Key Laboratory of Mobile Materials MOE, State Key Laboratory of Automotive Simulation and Control, Jilin University, Changchun, 130012, China.
| | - Bai Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China.
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46
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Li G, Lin K, Zhao K, Huang Y, Ji T, Shi L, Hao Y, Xiong Q, Zheng K, Pullerits T, Cui Y. Localized Bound Multiexcitons in Engineered Quasi-2D Perovskites Grains at Room Temperature for Efficient Lasers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211591. [PMID: 36918401 DOI: 10.1002/adma.202211591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2022] [Revised: 03/03/2023] [Indexed: 05/19/2023]
Abstract
Reducing the excitation threshold to minimize the Joule heating is critical for the realization of perovskite laser diodes. Although bound excitons are promising for low threshold laser, how to generate them at room temperature for laser applications is still unclear in quasi-2D perovskite-based devices. In this work, via engineering quasi-2D perovskite PEA2 (CH3 NH3 )n -1 Pbn Br3 n +1 microscopic grains by the anti-solvent method, room-temperature multiexciton radiative recombination is successfully demonstrated at a remarkably low pump density of 0.97 µJ cm-2 , which is only one-fourth of that required in 2D CdSe nanosheets. In addition, the well-defined translational momentum in quasi-2D perovskite grains can restrict the Auger recombination which is detrimental to radiative emission. Furthermore, the quasi-2D perovskite grains are favorable for increasing binding energies of excitons and biexcitons and so as the related radiative recombination. Consequently, the prepared <n = 8> phase quasi-2D perovskite film renders a threshold of room-temperature stimulated emission as low as 13.7 µJ cm-2 , reduced by 58.6% relative to the amorphous counterpart with larger grains. The findings in this work are expected to facilitate the development of solution-processable perovskite multiexcitonic laser diodes.
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Affiliation(s)
- Guohui Li
- College of Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan, 030024, China
- Chemical physics division and NanoLund, Lund University, Box 124, Lund, 22100, Sweden
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, 030006, China
| | - Kai Lin
- College of Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Kefan Zhao
- College of Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Yang Huang
- College of Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Ting Ji
- College of Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Linlin Shi
- College of Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Yuying Hao
- College of Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Qihua Xiong
- Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Kaibo Zheng
- Chemical physics division and NanoLund, Lund University, Box 124, Lund, 22100, Sweden
| | - Tonu Pullerits
- Chemical physics division and NanoLund, Lund University, Box 124, Lund, 22100, Sweden
| | - Yanxia Cui
- College of Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan, 030024, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, 030006, China
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47
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Rivera Medina MJ, Di Mario L, Kahmann S, Xi J, Portale G, Bongiovanni G, Mura A, Alonso Huitrón JC, Loi MA. Tuning the energy transfer in Ruddlesden-Popper perovskites phases through isopropylammonium addition - towards efficient blue emitters. NANOSCALE 2023; 15:6673-6685. [PMID: 36929178 DOI: 10.1039/d3nr00087g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Here we demonstrate blue LEDs with a peak wavelength of 481 nm, with outstanding colour purity of up to 88% (CIE coordinates (0.1092, 0.1738)), an external quantum yield of 5.2% and a luminance of 8260 cd m-2. These devices are based on quasi-2D PEA2(Cs0.75MA0.25)Pb2Br7, which is cast from solutions containing isopropylammonium (iPAm). iPAm as additive assist in supressing the formation of bulk-like phases, as pointed out by both photophysical and structural characterization. Additionally, the study of the excitation dynamics demonstrates a hindering of the energy transfer to domains of lower energy that generally undermines the performance and emission characteristics of blue-emitting LEDs based on quasi-2D perovskites. The achieved narrow distribution of quantum well sizes and the hindered energy transfer result in a thin film photoluminescence quantum yield exceeding 60%. Our work demonstrates the great potential to tailor the composition and the structure of thin films based on Ruddlesden-Popper phases to boost performance of optoelectronic devices - specifically blue perovskite LEDs.
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Affiliation(s)
- Martha Judith Rivera Medina
- Photophysics & Optoelectronics group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
- Departamento de Materia Condensada y Criogenia. Instituto de Investigaciones en Materiales. Universidad Nacional Autónoma de México. Ciudad Universitaria, A.P. 70-360, Coyoacán, 04510, Mexico City, Mexico
| | - Lorenzo Di Mario
- Photophysics & Optoelectronics group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
| | - Simon Kahmann
- Photophysics & Optoelectronics group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
| | - Jun Xi
- Photophysics & Optoelectronics group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
| | - Giuseppe Portale
- Macromolecular Chemistry and New Polymeric Material, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Giovanni Bongiovanni
- Dipartimento di Fisica, Università degli Studi di Cagliari, cittadella universitaria 09040, Monserrato, Cagliari, Italy
| | - Andrea Mura
- Dipartimento di Fisica, Università degli Studi di Cagliari, cittadella universitaria 09040, Monserrato, Cagliari, Italy
| | - Juan Carlos Alonso Huitrón
- Departamento de Materia Condensada y Criogenia. Instituto de Investigaciones en Materiales. Universidad Nacional Autónoma de México. Ciudad Universitaria, A.P. 70-360, Coyoacán, 04510, Mexico City, Mexico
| | - Maria Antonietta Loi
- Photophysics & Optoelectronics group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
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48
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Hsieh C, Tan G, Chuang Y, Lin H, Lai P, Jan P, Chen B, Lu C, Yang S, Hsiao K, Lu M, Chen L, Lin H. Vacuum-Deposited Inorganic Perovskite Light-Emitting Diodes with External Quantum Efficiency Exceeding 10% via Composition and Crystallinity Manipulation of Emission Layer under High Vacuum. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206076. [PMID: 36748267 PMCID: PMC10074115 DOI: 10.1002/advs.202206076] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Revised: 12/16/2022] [Indexed: 06/18/2023]
Abstract
Although vacuum-deposited metal halide perovskite light-emitting diodes (PeLEDs) have great promise for use in large-area high-color-gamut displays, the efficiency of vacuum-sublimed PeLEDs currently lags that of solution-processed counterparts. In this study, highly efficient vacuum-deposited PeLEDs are prepared through a process of optimizing the stoichiometric ratio of the sublimed precursors under high vacuum and incorporating ultrathin under- and upper-layers for the perovskite emission layer (EML). In contrast to the situation in most vacuum-deposited organic light-emitting devices, the properties of these perovskite EMLs are highly influenced by the presence and nature of the upper- and presublimed materials, thereby allowing us to enhance the performance of the resulting devices. By eliminating Pb° formation and passivating defects in the perovskite EMLs, the PeLEDs achieve an outstanding external quantum efficiency (EQE) of 10.9% when applying a very smooth and flat geometry; it reaches an extraordinarily high value of 21.1% when integrating a light out-coupling structure, breaking through the 10% EQE milestone of vacuum-deposited PeLEDs.
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Affiliation(s)
- Chung‐An Hsieh
- Department of PhotonicsNational Yang MingChiao Tung UniversityNo. 1001 University RoadHsinchu300Taiwan
| | - Guang‐Hsun Tan
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Yung‐Tang Chuang
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Hao‐Cheng Lin
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Po‐Ting Lai
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Pei‐En Jan
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Bo‐Han Chen
- Institute of Photonics TechnologiesNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Chih‐Hsuan Lu
- Institute of Photonics TechnologiesNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Shang‐Da Yang
- Institute of Photonics TechnologiesNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Kai‐Yuan Hsiao
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Ming‐Yen Lu
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Li‐Yin Chen
- Department of PhotonicsNational Yang MingChiao Tung UniversityNo. 1001 University RoadHsinchu300Taiwan
| | - Hao‐Wu Lin
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
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49
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Liu L, Ge H, Wang Y, Zhang Z, Piao J, Qiu J, Zhang B, Shen W, Cao K, Aleshin AN, Chen S. Multidentate Zwitterionic Ligand-Assisted Formation of Pure Bromide-Based Perovskite Nanosheets and Their Application in Blue Light-Emitting Diodes. J Phys Chem Lett 2023; 14:2736-2743. [PMID: 36897044 DOI: 10.1021/acs.jpclett.3c00404] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) have demonstrated rapid development during the past decade, whereas the inferior device performance of blue ones impedes the application in full-color display and lighting. Low-dimensional perovskites turn out to be the most promising blue-emitters owing to their superior stability. In this work, a multidentate zwitterionic l-arginine is proposed to achieve blue emission from pure bromide-based perovskites by in situ-forming low-dimensional nanosheets. First, l-arginine can promote the formation of perovskite nanosheets due to the strong interaction between the peripheral guanidinium cations and [PbBr6]4- octahedral layers, enabling a significant blue-shift. Second, the carboxyl group within l-arginine can passivate uncoordinated Pb2+ ions, improving the device performance. Finally, a blue PeLED is successfully constructed on the basis of the l-arginine-modulated perovskite film, demonstrating a peak luminance of 2152 cd/m2, an external quantum efficiency of 5.4%, and operation lifetime of 13.81 min. Further, the enlightenment from this work is hopefully to be applied in rationally designing spacer cations for low-dimensional perovskite optoelectronic devices.
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Affiliation(s)
- Lihui Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Honggang Ge
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Yun Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Zhongjin Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Junxian Piao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Jiahao Qiu
- Center for Advanced Analytical Science, School of Chemistry and Chemical Engineering, Guangzhou Key Laboratory of Sensing Materials & Devices, Guangzhou University, Guangzhou 510006, China
| | - Baohua Zhang
- Center for Advanced Analytical Science, School of Chemistry and Chemical Engineering, Guangzhou Key Laboratory of Sensing Materials & Devices, Guangzhou University, Guangzhou 510006, China
| | - Wei Shen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Kun Cao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Andrey N Aleshin
- Ioffe Institute, 26 Politekhnicheskaya, St. Petersburg 194021, Russia
| | - Shufen Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
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50
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Chua HM, Yantara N, Tay YB, Abdul Latiff S, Mhaisalkar S, Mathews N. Influence of Ionic Additives in the PEDOT:PSS Hole Transport Layers for Efficient Blue Perovskite Light Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 36881447 DOI: 10.1021/acsami.3c01024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Ruddlesden-Popper (RP) perovskites have been gaining traction in the development of high-efficiency or blue-emitting perovskite light emitting diodes (PeLEDs) due to the unique energy funneling mechanism, which enhances photoluminescence intensity, and dimensional control, which enables spectral tuning. In a conventional p-i-n device structure, the quality of RP perovskite films, including grain morphology and defects, as well as device performance can be significantly influenced by the underlying hole-transport layer (HTL). Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is commonly used in several PeLEDs as an HTL because of its high electrical conductivity and optical transparency. Nonetheless, the energy level mismatch and exciton quenching caused by PEDOT:PSS often compromises PeLED performance. Herein, we investigate the mitigation of these effects through addition of work-function-tunable PSS Na to the PEDOT:PSS HTL and assess the impact on blue PeLED performance. Surface analysis of the modified PEDOT:PSS HTLs reveals a PSS-rich layer that alleviates exciton quenching at the HTL/perovskite interface. At an optimal concentration of 6% PSS Na addition, an improvement in the external quantum efficiency is observed, with champion blue and sky-blue PeLEDs achieving 4% (480 nm) and 6.36% (496 nm), respectively, while operation stability is prolonged by fourfold.
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Affiliation(s)
- Huei Min Chua
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Block N4.1, 639798 Singapore
| | - Natalia Yantara
- Energy Research Institute @ NTU, Nanyang Technological University, Research Techno Plaza, X-Frontier Block, Level 5, 50 Nanyang Drive, 637553 Singapore
| | - Yeow Boon Tay
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Block N4.1, 639798 Singapore
| | - Suriani Abdul Latiff
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Block N4.1, 639798 Singapore
| | - Subodh Mhaisalkar
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Block N4.1, 639798 Singapore
- Energy Research Institute @ NTU, Nanyang Technological University, Research Techno Plaza, X-Frontier Block, Level 5, 50 Nanyang Drive, 637553 Singapore
| | - Nripan Mathews
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Block N4.1, 639798 Singapore
- Energy Research Institute @ NTU, Nanyang Technological University, Research Techno Plaza, X-Frontier Block, Level 5, 50 Nanyang Drive, 637553 Singapore
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