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Bai X, Lu S, Song P, Jia Z, Gao Z, Peng T, Wang Z, Jiang Q, Cui H, Tian W, Feng R, Liang Z, Kang Q, Yuan H. Heterojunction of MXenes and MN 4-graphene: Machine learning to accelerate the design of bifunctional oxygen electrocatalysts. J Colloid Interface Sci 2024; 664:716-725. [PMID: 38492372 DOI: 10.1016/j.jcis.2024.03.073] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Revised: 02/18/2024] [Accepted: 03/10/2024] [Indexed: 03/18/2024]
Abstract
Oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) are essential for the development of excellent bifunctional electrocatalysts, which are key functions in clean energy production. The emphasis of this study lies in the rapid design and investigation of 153 MN4-graphene (Gra)/ MXene (M2NO) electrocatalysts for ORR/OER catalytic activity using machine learning (ML) and density functional theory (DFT). The DFT results indicated that CoN4-Gra/Ti2NO had both good ORR (0.37 V) and OER (0.30 V) overpotentials, while TiN4-Gra/M2NO and MN4-Gra/Cr2NO had high overpotentials. Our research further indicated orbital spin polarization and d-band centers far from the Fermi energy level, affecting the adsorption energy of oxygen-containing intermediates and thus reducing the catalytic activity. The ML results showed that the gradient boosting regression (GBR) model successfully predicted the overpotentials of the monofunctional catalysts RhN4-Gra/Ti2NO (ORR, 0.39 V) and RuN4-Gra/W2NO (OER, 0.45 V) as well as the overpotentials of the bifunctional catalyst RuN4-Gra/W2NO (ORR, 0.39 V; OER, 0.45 V). The symbolic regression (SR) algorithm was used to construct the overpotential descriptors without environmental variable features to accelerate the catalyst screening and shorten the trial-and-error costs from the source, providing a reliable theoretical basis for the experimental synthesis of MXene heterostructures.
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Affiliation(s)
- Xue Bai
- School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China; Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
| | - Sen Lu
- School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China; Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
| | - Pei Song
- School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China; Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
| | - Zepeng Jia
- School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China; Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
| | - Zhikai Gao
- School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China; Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
| | - Tiren Peng
- School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China; Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
| | - Zhiguo Wang
- School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China; Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
| | - Qi Jiang
- School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China; Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
| | - Hong Cui
- School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China; Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China.
| | - Weizhi Tian
- College of Mechanical & Electrical Engineering, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, China.
| | - Rong Feng
- School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China; Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
| | - Zhiyong Liang
- School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China; Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
| | - Qin Kang
- School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China; Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
| | - Hongkuan Yuan
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
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Zhu Y, Feng B, Su Y, Li G, Liu Y, Hou Y, Zhang J, Li W, Zhong G, Yang C, Chen M. Strong Covalent Coupling in Vertically Layered SnSe 2/PTAA Heterojunctions Enabled High Performance Inorganic-Organic Hybrid Photodetectors. NANO LETTERS 2024; 24:6778-6787. [PMID: 38767965 DOI: 10.1021/acs.nanolett.4c01515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Controllable large-scale integration of two-dimensional (2D) materials with organic semiconductors and the realization of strong coupling between them still remain challenging. Herein, we demonstrate a wafer-scale, vertically layered SnSe2/PTAA heterojunction array with high light-trapping ability via a low-temperature molecular beam epitaxy method and a facile spin-coating process. Conductive probe atomic force microscopy (CP-AFM) measurements reveal strong rectification and photoresponse behavior in the individual SnSe2 nanosheet/PTAA heterojunction. Theoretical analysis demonstrates that vertically layered SnSe2/PTAA heterojunctions exhibit stronger C-Se covalent coupling than that of the conventional tiled type, which could facilitate more efficient charge transfer. Benefiting from these advantages, the SnSe2/PTAA heterojunction photodetectors with an optimized PTAA concentration show high performance, including a responsivity of 41.02 A/W, an external quantum efficiency of 1.31 × 104%, and high uniformity. The proposed approach for constructing large-scale 2D inorganic-organic heterostructures represents an effective route to fabricate high-performance broadband photodetectors for integrated optoelectronic systems.
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Affiliation(s)
- Yuanhao Zhu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Bohan Feng
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Yuhan Su
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Guangyuan Li
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yingming Liu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yuxin Hou
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Jie Zhang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wenjie Li
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Guohua Zhong
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Chunlei Yang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ming Chen
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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3
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Atienza CM, Sánchez L. Increasing Dimensionality in Self-Assembly: Toward Two-Dimensional Supramolecular Polymers. Chemistry 2024; 30:e202400379. [PMID: 38525912 DOI: 10.1002/chem.202400379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Revised: 03/22/2024] [Accepted: 03/25/2024] [Indexed: 03/26/2024]
Abstract
Different approaches to achieve 2D supramolecular polymers, as an alternative to the covalent bottom-up approaches reported for the preparation of 2D materials, are reviewed. The significance of the operation of weak non-covalent forces to induce a lateral growth of a number of self-assembling units is collected. The examples of both thermodynamically and kinetically controlled formation of 2D supramolecular polymers showed in this review demonstrate the utility of this strategy to achieve new 2D materials with biased morphologies (nanosheets, scrolls, porous surfaces) and showing elegant applications like chiral recognition, enantioselective uptake or asymmetric organic transformations. Furthermore, elaborated techniques like seeded or living supramolecular polymerizations have been demonstrated to give rise to complex 2D nanostructures.
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Affiliation(s)
- Carmen M Atienza
- Departmento de Química Orgánica, Facultad de Ciencias Químicas, Universidad Complutense de Madrid, Ciudad Universitaria s/n, 28040, -Madrid, Spain
| | - Luis Sánchez
- Departmento de Química Orgánica, Facultad de Ciencias Químicas, Universidad Complutense de Madrid, Ciudad Universitaria s/n, 28040, -Madrid, Spain
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4
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Ferdous N, Islam MS, Park J. A resilient type-III broken gap Ga 2O 3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property. Sci Rep 2024; 14:12748. [PMID: 38830949 DOI: 10.1038/s41598-024-63354-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2024] [Accepted: 05/28/2024] [Indexed: 06/05/2024] Open
Abstract
The potential of van der Waals (vdW) heterostructure to incorporate the outstanding features of stacked materials to meet a variety of application requirements has drawn considerable attention. Due to the unique quantum tunneling mechanisms, a type-III broken-gap obtained from vdW heterostructure is a promising design strategy for tunneling field-effect transistors. Herein, a unique Ga2O3/SiC vdW bilayer heterostructure with inherent type-III broken gap band alignment has been revealed through first-principles calculation. The underlying physical mechanism to form the broken gap band alignment is thoroughly studied. Due to the overlapping band structures, a tunneling window of 0.609 eV has been created, which enables the charges to tunnel from the VBM of the SiC layer to the CBM of the Ga2O3 layer and fulfills the required condition for band-to-band tunneling. External electric field and strain can be applied to tailor the electronic behavior of the bilayer heterostructure. Positive external electric field and compressive vertical strain enlarge the tunneling window and enhance the band-to-band tunneling (BTBT) scheme while negative electric field and tensile vertical strain shorten the BTBT window. Under external electric field as well as vertical and biaxial strain, the Ga2O3/SiC vdW hetero-bilayer maintains the type-III band alignment, revealing its capability to tolerate the external electric field and strain with resilience. All these results provide a compelling platform of the Ga2O3/SiC vdW bilayer to design high performance tunneling field effect transistor.
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Affiliation(s)
- Naim Ferdous
- Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV, 89557, USA
| | - Md Sherajul Islam
- Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV, 89557, USA.
- Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, 9203, Bangladesh.
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV, 89557, USA
- School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON, K1N6N5, Canada
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5
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Wang F, Shi G, Kim KW, Park HJ, Jang JG, Tan HR, Lin M, Liu Y, Kim T, Yang D, Zhao S, Lee K, Yang S, Soumyanarayanan A, Lee KJ, Yang H. Field-free switching of perpendicular magnetization by two-dimensional PtTe 2/WTe 2 van der Waals heterostructures with high spin Hall conductivity. NATURE MATERIALS 2024; 23:768-774. [PMID: 38243113 DOI: 10.1038/s41563-023-01774-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2022] [Accepted: 11/28/2023] [Indexed: 01/21/2024]
Abstract
The key challenge of spin-orbit torque applications lies in exploring an excellent spin source capable of generating out-of-plane spins while exhibiting high spin Hall conductivity. Here we combine PtTe2 for high spin conductivity and WTe2 for low crystal symmetry to satisfy the above requirements. The PtTe2/WTe2 bilayers exhibit a high in-plane spin Hall conductivity σs,y ≈ 2.32 × 105 × ħ/2e Ω-1 m-1 and out-of-plane spin Hall conductivity σs,z ≈ 0.25 × 105 × ħ/2e Ω-1 m-1, where ħ is the reduced Planck's constant and e is the value of the elementary charge. The out-of-plane spins in PtTe2/WTe2 bilayers enable the deterministic switching of perpendicular magnetization at room temperature without magnetic fields, and the power consumption is 67 times smaller than that of the Pt control case. The high out-of-plane spin Hall conductivity is attributed to the conversion from in-plane spin to out-of-plane spin, induced by the crystal asymmetry of WTe2. Our work establishes a low-power perpendicular magnetization manipulation based on wafer-scale two-dimensional van der Waals heterostructures.
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Affiliation(s)
- Fei Wang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Guoyi Shi
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
- Integrative Sciences and Engineering Programme, NUS Graduate School, National University of Singapore, Singapore, Singapore
| | - Kyoung-Whan Kim
- Center of Spintronics, Korea Institute of Science and Technology, Seoul, Korea
| | - Hyeon-Jong Park
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, Korea
| | - Jae Gwang Jang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - Hui Ru Tan
- Institute of Materials Research & Engineering, Agency for Science Technology & Research (A*STAR), Singapore, Singapore
| | - Ming Lin
- Institute of Materials Research & Engineering, Agency for Science Technology & Research (A*STAR), Singapore, Singapore
| | - Yakun Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Taeheon Kim
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Dongsheng Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Shishun Zhao
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Kyusup Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Shuhan Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Anjan Soumyanarayanan
- Institute of Materials Research & Engineering, Agency for Science Technology & Research (A*STAR), Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Kyung-Jin Lee
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea.
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
- Integrative Sciences and Engineering Programme, NUS Graduate School, National University of Singapore, Singapore, Singapore.
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6
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Chen L, Wu AX, Tulu N, Wang J, Juanson A, Watanabe K, Taniguchi T, Pettes MT, Campbell MA, Xu M, Gadre CA, Zhou Y, Chen H, Cao P, Jauregui LA, Wu R, Pan X, Sanchez-Yamagishi JD. Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials. NATURE MATERIALS 2024; 23:741-746. [PMID: 38740956 DOI: 10.1038/s41563-024-01894-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Accepted: 04/09/2024] [Indexed: 05/16/2024]
Abstract
Confining materials to two-dimensional forms changes the behaviour of the electrons and enables the creation of new devices. However, most materials are challenging to produce as uniform, thin crystals. Here we present a synthesis approach where thin crystals are grown in a nanoscale mould defined by atomically flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mould made of hexagonal boron nitride, we grow ultraflat bismuth crystals less than 10 nm thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies. The vdW-moulded bismuth shows exceptional electronic transport, enabling the observation of Shubnikov-de Haas quantum oscillations originating from the (111) surface state Landau levels. By measuring the gate-dependent magnetoresistance, we observe multi-carrier quantum oscillations and Landau level splitting, with features originating from both the top and bottom surfaces. Our vdW mould growth technique establishes a platform for electronic studies and control of bismuth's Rashba surface states and topological boundary modes1-3. Beyond bismuth, the vdW-moulding approach provides a low-cost way to synthesize ultrathin crystals and directly integrate them into a vdW heterostructure.
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Affiliation(s)
- Laisi Chen
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Amy X Wu
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Naol Tulu
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Joshua Wang
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Adrian Juanson
- Department of Physics and Astronomy, California State University Long Beach, Long Beach, CA, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Michael T Pettes
- Center for Integrated Nanotechnologies (CINT), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Marshall A Campbell
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
- Center for Integrated Nanotechnologies (CINT), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Mingjie Xu
- Irvine Materials Research Institute, University of California Irvine, Irvine, CA, USA
| | - Chaitanya A Gadre
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Yinong Zhou
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Hangman Chen
- Department of Mechanical and Aerospace Engineering, University of California Irvine, Irvine, CA, USA
| | - Penghui Cao
- Department of Mechanical and Aerospace Engineering, University of California Irvine, Irvine, CA, USA
| | - Luis A Jauregui
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Xiaoqing Pan
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
- Irvine Materials Research Institute, University of California Irvine, Irvine, CA, USA
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, USA
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7
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Sun B, Wang P, Liang Z, Li Z, Ma Q. MoS 2/MXene Van der Waals heterojunction-based electrochemiluminescence sensor for triple negative breast cancer detection. Talanta 2024; 277:126343. [PMID: 38823325 DOI: 10.1016/j.talanta.2024.126343] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Revised: 05/28/2024] [Accepted: 05/30/2024] [Indexed: 06/03/2024]
Abstract
The van der Waals heterojunction is able to combine the advantages of different materials and has potential to be used in biosensing researches. In this study, we developed a novel van der Waals heterojunction by combining MXene and MoS2 nanosheets for the electrochemiluminescence (ECL) sensing applications. This van der Waals heterojunction material not only possessed the superior conductivity of MXene, but also regulated the electron transport. Additionally, the incorporation of MoS2 nanosheets into the MXene interlayers significantly enhances the material stability. Meanwhile, nitrogen-rich quantum dots (N dots) were synthesized as ECL tags with an impressive nitrogen content of up to 75 %. By integrating the ECL response of N dots within the van der Waals heterojunction, we established a highly efficient sensing system for miRNA-373, which overexpressed in triple negative breast cancer tissues. The van der Waals heterojunction-based biosensor can enhance the ECL signal of N dots effectively to detect miRNA-373 from 1 fM to 1 μM. Consequently, the developed sensing system holds promise for the early detection of metastasis of the triple-negative breast cancer, paving the way for the effective clinical interventions.
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Affiliation(s)
- Biyang Sun
- Department of Analytical Chemistry, College of Chemistry, Jilin University, Changchun 130012, China
| | - Peilin Wang
- Department of Analytical Chemistry, College of Chemistry, Jilin University, Changchun 130012, China
| | - Zihui Liang
- Department of Analytical Chemistry, College of Chemistry, Jilin University, Changchun 130012, China
| | - Zhenrun Li
- Department of Analytical Chemistry, College of Chemistry, Jilin University, Changchun 130012, China
| | - Qiang Ma
- Department of Analytical Chemistry, College of Chemistry, Jilin University, Changchun 130012, China.
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8
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Almoalem A, Feldman I, Mangel I, Shlafman M, Yaish YE, Fischer MH, Moshe M, Ruhman J, Kanigel A. The observation of π-shifts in the Little-Parks effect in 4Hb-TaS 2. Nat Commun 2024; 15:4623. [PMID: 38816364 PMCID: PMC11139670 DOI: 10.1038/s41467-024-48260-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Accepted: 04/23/2024] [Indexed: 06/01/2024] Open
Abstract
Finding evidence of non-trivial pairing states is one of the greatest experimental challenges in the field of unconventional superconductivity. Such evidence requires phase-sensitive probes susceptible to the internal structure of the order parameter. We report the measurement of the Little-Parks effect in the unconventional superconductor candidate 4Hb-TaS2. In half of our rings, which are fabricated from single-crystals, we find a π-shift in the transition-temperature oscillations. According to theory, such a π-shift is only possible if the order parameter is non-s-wave. In the absence of crystallographic defects, the shift provides evidence of a multi-component order parameter. Thus, this observation increases the likelihood of the two-component order parameter scenario in 4Hb-TaS2. Furthermore, we show that Tc is enhanced as a function of the out-of-plane field when a constant in-plane field is applied, which we explain using a two-component order-parameter.
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Affiliation(s)
- Avior Almoalem
- Physics Department, Technion-Israel Institute of Technology, Haifa, 32000, Israel
| | - Irena Feldman
- Physics Department, Technion-Israel Institute of Technology, Haifa, 32000, Israel
| | - Ilay Mangel
- Physics Department, Technion-Israel Institute of Technology, Haifa, 32000, Israel
| | - Michael Shlafman
- Andrew and Erna Viterbi Faculty of Electrical and Computer Engineering, Technion, Haifa, 32000, Israel
| | - Yuval E Yaish
- Andrew and Erna Viterbi Faculty of Electrical and Computer Engineering, Technion, Haifa, 32000, Israel
| | - Mark H Fischer
- Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057, Zurich, Switzerland
| | - Michael Moshe
- Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem, 91904, Israel
| | - Jonathan Ruhman
- Department of Physics, Bar-Ilan University, 52900, Ramat Gan, Israel
| | - Amit Kanigel
- Physics Department, Technion-Israel Institute of Technology, Haifa, 32000, Israel.
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9
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Yang S, Shi H, Hu Y, Si J, Chen C, Yang J, Qu H, Hu X, Zhang F, Zhang S. High-Performance Sub-10 nm Two-Dimensional SbSeBr Transistors through Transport Orientation. J Phys Chem Lett 2024; 15:5721-5727. [PMID: 38770896 DOI: 10.1021/acs.jpclett.4c01129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Exploring two-dimensional (2D) materials with a small carrier effective mass and suitable band gap is crucial for the design of metal oxide semiconductor field effect transistors (MOSFETs). Here, the quantum transport properties of stable 2D SbSeBr are simulated on the basis of first-principles calculations. Monolayer SbSeBr proves to be a competitive channel material, offering a suitable band gap of 1.18 eV and a small electron effective mass (me*) of 0.22m0. The 2D SbSeBr field effect transistor (FET) with 8 nm channel length exhibits a high on-state current of 1869 μA/μm, low power consumption of 0.080 fJ/μm, and small delay time of 0.062 ps, which can satisfy the requirements of the International Technology Roadmap for Semiconductors for high-performance devices. Moreover, despite the monolayer SbSeBr having an isotropic me*, the asymmetrical band trends enable SbSeBr FETs to display transport orientation, which emphasizes the importance of band trends and provides valuable insights for selecting channel materials.
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Affiliation(s)
- Siyu Yang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Hao Shi
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Yang Hu
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Jingwen Si
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Chuyao Chen
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Jialin Yang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Hengze Qu
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Xuemin Hu
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
- School of Material Engineering, Jinling Institute of Technology, Nanjing, Jiangsu 211169, People's Republic of China
| | - Fengjun Zhang
- Anhui Province International Research Center on Advanced Building Materials, Anhui Jianzhu University, Hefei, Anhui 230601, People's Republic of China
| | - Shengli Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
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10
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Barri N, Rastogi A, Islam MA, Kumral B, Demingos PG, Onodera M, Machida T, Singh CV, Filleter T. Cyclic Wear Reliability of 2D Monolayers. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27979-27987. [PMID: 38752682 DOI: 10.1021/acsami.4c04495] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Understanding wear, a critical factor impacting the reliability of mechanical systems, is vital for nano-, meso-, and macroscale applications. Due to the complex nature of nanoscale wear, the behavior of nanomaterials such as two-dimensional materials under cyclic wear and their surface damage mechanism is yet unexplored. In this study, we used atomic force microscopy coupled with molecular dynamic simulations to statistically examine the cyclic wear behavior of monolayer graphene, MoS2, and WSe2. We show that graphene displays exceptional durability and lasts over 3000 cycles at 85% of the applied critical normal load before failure, while MoS2 and WSe2 last only 500 cycles on average. Moreover, graphene undergoes catastrophic failure as a result of stress concentration induced by local out-of-plane deformation. In contrast, MoS2 and WSe2 exhibit intermittent failure, characterized by damage initiation at the edge of the wear track and subsequent propagation throughout the entire contact area. In addition to direct implications for MEMS and NEMS industries, this work can also enable the optimization of the use of 2D materials as lubricant additives on a macroscopic level.
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Affiliation(s)
- Nima Barri
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario, Canada M5S 3G8
| | - Akshat Rastogi
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario, Canada M5S 3G8
- Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario, Canada M5S 3E4
| | - Md Akibul Islam
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario, Canada M5S 3G8
| | - Boran Kumral
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario, Canada M5S 3G8
| | - Pedro Guerra Demingos
- Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario, Canada M5S 3E4
| | - Momoko Onodera
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153 8505, Japan
| | - Tomoki Machida
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153 8505, Japan
| | - Chandra Veer Singh
- Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario, Canada M5S 3E4
| | - Tobin Filleter
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario, Canada M5S 3G8
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11
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Guo Y, Li J, Zhan X, Wang C, Li M, Zhang B, Wang Z, Liu Y, Yang K, Wang H, Li W, Gu P, Luo Z, Liu Y, Liu P, Chen B, Watanabe K, Taniguchi T, Chen XQ, Qin C, Chen J, Sun D, Zhang J, Wang R, Liu J, Ye Y, Li X, Hou Y, Zhou W, Wang H, Han Z. Van der Waals polarity-engineered 3D integration of 2D complementary logic. Nature 2024:10.1038/s41586-024-07438-5. [PMID: 38811731 DOI: 10.1038/s41586-024-07438-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 04/18/2024] [Indexed: 05/31/2024]
Abstract
Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis1-3. Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures4,5, as well as hetero-2D layers with different carrier types6-8, have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe2 (refs. 9-17) and MoS2 (refs. 11,18-28)) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS2, atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm2 V-1 s-1, on/off ratios reaching 106 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates.
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Affiliation(s)
- Yimeng Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Anhui, China
| | - Jiangxu Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Xuepeng Zhan
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Chunwen Wang
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Min Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
| | - Biao Zhang
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing, China
| | - Zirui Wang
- School of Integrated Circuits, Peking University, Beijing, China
| | - Yueyang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing, Beijing, China
| | - Kaining Yang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
| | - Hai Wang
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Wanying Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Pingfan Gu
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhaoping Luo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Yingjia Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Anhui, China
| | - Peitao Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Bo Chen
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Chengbing Qin
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan, China
| | - Jiezhi Chen
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Dongming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Jing Zhang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
| | - Runsheng Wang
- School of Integrated Circuits, Peking University, Beijing, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
- Liaoning Academy of Materials, Shenyang, China
| | - Yu Ye
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China
- Liaoning Academy of Materials, Shenyang, China
| | - Xiuyan Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- Liaoning Academy of Materials, Shenyang, China.
| | - Yanglong Hou
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China.
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing, China.
| | - Wu Zhou
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China.
| | - Hanwen Wang
- Liaoning Academy of Materials, Shenyang, China.
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China.
- Liaoning Academy of Materials, Shenyang, China.
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12
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Toom SR, Sato T, Milne Z, Bernal RA, Jeng YR, Muratore C, Glavin NR, Carpick RW, Schall JD. Nanoscale Adhesion and Material Transfer at 2D MoS 2-MoS 2 Interfaces Elucidated by In Situ Transmission Electron Microscopy and Atomistic Simulations. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38805354 DOI: 10.1021/acsami.4c03208] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Low-dimensional materials, such as MoS2, hold promise for use in a host of emerging applications, including flexible, wearable sensors due to their unique electrical, thermal, optical, mechanical, and tribological properties. The implementation of such devices requires an understanding of adhesive phenomena at the interfaces between these materials. Here, we describe combined nanoscale in situ transmission electron microscopy (TEM)/atomic force microscopy (AFM) experiments and simulations measuring the work of adhesion (Wadh) between self-mated contacts of ultrathin nominally amorphous and nanocrystalline MoS2 films deposited on Si scanning probe tips. A customized TEM/AFM nanoindenter permitted high-resolution imaging and force measurements in situ. The Wadh values for nanocrystalline and nominally amorphous MoS2 were 604 ± 323 mJ/m2 and 932 ± 647 mJ/m2, respectively, significantly higher than previously reported values for mechanically exfoliated MoS2 single crystals. Closely matched molecular dynamics (MD) simulations show that these high values can be explained by bonding between the opposing surfaces at defects such as grain boundaries. Simulations show that as grain size decreases, the number of bonds formed, the Wadh and its variability all increase, further supporting that interfacial covalent bond formation causes high adhesion. In some cases, sliding between delaminated MoS2 flakes during separation is observed, which further increases the Wadh and the range of adhesive interaction. These results indicate that for low adhesion, the MoS2 grains should be large relative to the contact area to limit the opportunity for bonding, whereas small grains may be beneficial, where high adhesion is needed to prevent device delamination in flexible systems.
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Affiliation(s)
- Sathwik Reddy Toom
- Department of Mechanical Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411, United States
| | - Takaaki Sato
- Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Zachary Milne
- Gatan, Inc., Pleasanton, California 94588, United States
| | - Rodrigo A Bernal
- Department of Mechanical Engineering, University of Texas, Dallas, Richardson, Texas 75080, United States
| | - Yeau-Ren Jeng
- Department of Biomedical Engineering, National Cheng Kung University in Tainan, Tainan 70101, Taiwan
| | - Christopher Muratore
- Department of Chemical and Materials Engineering, University of Dayton, Dayton, Ohio 45469, United States
| | - Nicholas R Glavin
- Materials and Manufacturing Directorate, US Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Robert W Carpick
- Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - J David Schall
- Department of Mechanical Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411, United States
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13
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Shen X, Lin X, Peng Y, Zhang Y, Long F, Han Q, Wang Y, Han L. Two-Dimensional Materials for Highly Efficient and Stable Perovskite Solar Cells. NANO-MICRO LETTERS 2024; 16:201. [PMID: 38782775 PMCID: PMC11116351 DOI: 10.1007/s40820-024-01417-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Accepted: 04/11/2024] [Indexed: 05/25/2024]
Abstract
Perovskite solar cells (PSCs) offer low costs and high power conversion efficiency. However, the lack of long-term stability, primarily stemming from the interfacial defects and the susceptible metal electrodes, hinders their practical application. In the past few years, two-dimensional (2D) materials (e.g., graphene and its derivatives, transitional metal dichalcogenides, MXenes, and black phosphorus) have been identified as a promising solution to solving these problems because of their dangling bond-free surfaces, layer-dependent electronic band structures, tunable functional groups, and inherent compactness. Here, recent progress of 2D material toward efficient and stable PSCs is summarized, including its role as both interface materials and electrodes. We discuss their beneficial effects on perovskite growth, energy level alignment, defect passivation, as well as blocking external stimulus. In particular, the unique properties of 2D materials to form van der Waals heterojunction at the bottom interface are emphasized. Finally, perspectives on the further development of PSCs using 2D materials are provided, such as designing high-quality van der Waals heterojunction, enhancing the uniformity and coverage of 2D nanosheets, and developing new 2D materials-based electrodes.
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Affiliation(s)
- Xiangqian Shen
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physical Science and Technology, Xinjiang University, Urumqi, 830046, People's Republic of China
| | - Xuesong Lin
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Yong Peng
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, People's Republic of China
| | - Yiqiang Zhang
- College of Chemistry, Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Fei Long
- Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, School of Materials Science and Engineering, Guilin University of Technology, Guilin, 541004, People's Republic of China
| | - Qifeng Han
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Yanbo Wang
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China.
| | - Liyuan Han
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China.
- Special Division of Environmental and Energy Science, College of Arts and Sciences, Komaba Organization for Educational Excellence, University of Tokyo, Tokyo, 153-8902, Japan.
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14
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Bera A, Kundu B, Pal AJ. Does an intrinsic strain contribute to the effect of quantum confinement phenomenon? An alloyed transition metal dichalcogenide series, Mo(S 1-xSe x) 2 as a case study. NANOSCALE 2024; 16:9966-9974. [PMID: 38695085 DOI: 10.1039/d3nr06107h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2024]
Abstract
It is well known that the bandgap of 2D transition metal dichalcogenides (TMDs) in the quantum confinement regime increases with a decrease in the number of layers. In this work, we show the effect of lattice strain on the dependence of the gap. We have designed an ideal system in the form of common-cationic alloyed-TMDs, Mo(S1-xSex)2, for such studies. With a large difference between the ionic radii of the two chalcogens, the nanoflakes of the alloys possessed a lattice strain and have been found to yield a lower bandgap than those of both the end-members, MoS2 and MoSe2. More importantly, the dependence of the bandgap on the layer number in the nanoflakes of the alloys turned out to be steeper than in conventional binary TMDs. The experimental results imply that the lattice strain in 2D semiconductors has contributed to the effect of the quantum confinement phenomenon in addition to decreasing the bandgap, the latter being earlier predicted from a theoretical model. We have derived the electronic bandgap and the band-edge energies of the series of alloyed-TMDs in their nanoflake forms and the dependences on the number of layers from the density of states (DOS), as obtained from scanning tunneling spectroscopy (STS) recorded in a scanning tunneling microscope (STM) in an extremely localized manner.
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Affiliation(s)
- Arpan Bera
- School of Physical Sciences, Indian Association for the Cultivation of Science, Kolkata 700032, India.
| | - Biswajit Kundu
- School of Physical Sciences, Indian Association for the Cultivation of Science, Kolkata 700032, India.
| | - Amlan J Pal
- School of Physical Sciences, Indian Association for the Cultivation of Science, Kolkata 700032, India.
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
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15
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Xie J, Zhang Z, Zhang H, Nagarajan V, Zhao W, Kim HL, Sanborn C, Qi R, Chen S, Kahn S, Watanabe K, Taniguchi T, Zettl A, Crommie MF, Analytis J, Wang F. Low Resistance Contact to P-Type Monolayer WSe 2. NANO LETTERS 2024; 24:5937-5943. [PMID: 38712885 DOI: 10.1021/acs.nanolett.3c04195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, with their atomically thin thickness, hold great promise for future electronic devices. One challenge to achieving high-performance 2D semiconductor field effect transistors (FET) is the high contact resistance at the metal-semiconductor interface. In this study, we develop a charge-transfer doping strategy with WSe2/α-RuCl3 heterostructures to achieve low-resistance ohmic contact for p-type monolayer WSe2 transistors. We show that hole doping as high as 3 × 1013 cm-2 can be achieved in the WSe2/α-RuCl3 heterostructure due to its type-III band alignment, resulting in an ohmic contact with resistance of 4 kΩ μm. Based on that, we demonstrate p-type WSe2 transistors with an on-current of 35 μA·μm-1 and an ION/IOFF ratio exceeding 109 at room temperature.
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Affiliation(s)
- Jingxu Xie
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Graduate Group in Applied Science and Technology, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Zuocheng Zhang
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Haodong Zhang
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Vikram Nagarajan
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Wenyu Zhao
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Ha-Leem Kim
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Collin Sanborn
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Ruishi Qi
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Sudi Chen
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Salman Kahn
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Alex Zettl
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at University of California Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Michael F Crommie
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at University of California Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - James Analytis
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at University of California Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Feng Wang
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at University of California Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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16
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Berman D, Jastrzebska A, Papi M, Rosenkranz A. Introduction to 2D materials and their applications. RSC Adv 2024; 14:17234-17235. [PMID: 38831772 PMCID: PMC11146523 DOI: 10.1039/d4ra90059f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/05/2024] Open
Abstract
Diana Berman, Agnieszka Jastrzebska, Massimiliano Papi, and Andreas Rosenkranz introduce the RSC Advances themed issue on 2D materials and their applications.
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Affiliation(s)
- Diana Berman
- Department of Materials Science and Engineering, University of North Texas Denton USA
| | - Agnieszka Jastrzebska
- Division of Microtechnology and Nanotechnology, Institute of Metrology and Biomedical Engineering, Faculty of Mechatronics, Warsaw University of Technology św. A. Boboli 8 02-525 Warsaw Poland
| | - Massimiliano Papi
- Dipartimento di Neuroscienze, Università Cattolica del Sacro Cuore Largo Francesco Vito 1 Rome 00168 Italy
- Fondazione Policlinico Universitario A. Gemelli IRCSS Rome 00168 Italy
| | - Andreas Rosenkranz
- Department of Chemical Engineering, Biotechnology and Materials (FCFM), Universidad de Chile Santiago Chile
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17
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Lu D, Chen Y, Lu Z, Ma L, Tao Q, Li Z, Kong L, Liu L, Yang X, Ding S, Liu X, Li Y, Wu R, Wang Y, Hu Y, Duan X, Liao L, Liu Y. Monolithic three-dimensional tier-by-tier integration via van der Waals lamination. Nature 2024:10.1038/s41586-024-07406-z. [PMID: 38778106 DOI: 10.1038/s41586-024-07406-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Accepted: 04/10/2024] [Indexed: 05/25/2024]
Abstract
Two-dimensional (2D) semiconductors have shown great potential for monolithic three-dimensional (M3D) integration due to their dangling-bonds-free surface and the ability to integrate to various substrates without the conventional constraint of lattice matching1-10. However, with atomically thin body thickness, 2D semiconductors are not compatible with various high-energy processes in microelectronics11-13, where the M3D integration of multiple 2D circuit tiers is challenging. Here we report an alternative low-temperature M3D integration approach by van der Waals (vdW) lamination of entire prefabricated circuit tiers, where the processing temperature is controlled to 120 °C. By further repeating the vdW lamination process tier by tier, an M3D integrated system is achieved with 10 circuit tiers in the vertical direction, overcoming previous thermal budget limitations. Detailed electrical characterization demonstrates the bottom 2D transistor is not impacted after repetitively laminating vdW circuit tiers on top. Furthermore, by vertically connecting devices within different tiers through vdW inter-tier vias, various logic and heterogeneous structures are realized with desired system functions. Our demonstration provides a low-temperature route towards fabricating M3D circuits with increased numbers of tiers.
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Affiliation(s)
- Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Quanyang Tao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Lingan Kong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Xiaokun Yang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Shuimei Ding
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Xiao Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Yunxin Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Lei Liao
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China.
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18
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Li Z, Liu J, Rasmita A, Zhang Z, Gao W, Chia EEM. Room-Temperature Geometrical Circular Photocurrent in Few-Layer MoS 2. NANO LETTERS 2024; 24:5952-5957. [PMID: 38726903 DOI: 10.1021/acs.nanolett.4c00057] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2024]
Abstract
Valleytronics, i.e., the manipulation of the valley degree of freedom, offers a promising path for energy-efficient electronics. One of the key milestones in this field is the room-temperature manipulation of the valley information in thick-layered material. Using scanning photocurrent microscopy, we achieve this milestone by observing a geometrically dependent circular photocurrent in a few-layer molybdenum disulfide (MoS2) under normal incidence. Such an observation shows that the system symmetry is lower than that of bulk MoS2 material, preserving the optical chirality-valley correspondence. Moreover, the circular photocurrent polarity can be reversed by applying electrical bias. We propose a model where the observed photocurrent results from the symmetry breaking and the built-in field at the electrode-sample interface. Our results show that the valley information is still retained even in thick-layered MoS2 at room temperature and opens up new opportunities for exploiting the valley index through interface engineering in multilayer valleytronics devices.
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Affiliation(s)
- Ziqi Li
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Jiayun Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Abdullah Rasmita
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Department of Physics, School of Sciences, Great Bay University, Dongguan 523000, China
- Great Bay Institute for Advanced Study, Dongguan 523000, China
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
- Centre for Quantum Technologies, National University of Singapore, Singapore 117543, Singapore
| | - Elbert E M Chia
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
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19
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Yan L, Bu K, Li Z, Zhang Z, Xia W, Li M, Li N, Guan J, Liu X, Ning J, Zhang D, Guo Y, Wang X, Yang W. Double Superconducting Dome of Quasi Two-Dimensional TaS 2 in Non-Centrosymmetric van der Waals Heterostructure. NANO LETTERS 2024; 24:6002-6009. [PMID: 38739273 DOI: 10.1021/acs.nanolett.4c00579] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
Two-dimensional van der Waals heterostructures (2D-vdWHs) based on transition metal dichalcogenides (TMDs) provide unparalleled control over electronic properties. However, the interlayer coupling is challenged by the interfacial misalignment and defects, which hinders a comprehensive understanding of the intertwined electronic orders, especially superconductivity and charge density wave (CDW). Here, by using pressure to regulate the interlayer coupling of non-centrosymmetric 6R-TaS2 vdWHs, we observe an unprecedented phase diagram in TMDs. This phase diagram encompasses successive suppression of the original CDW states from alternating H-layer and T-layer configurations, the emergence and disappearance of a new CDW-like state, and a double superconducting dome induced by different interlayer coupling effects. These results not only illuminate the crucial role of interlayer coupling in shaping the complex phase diagram of TMD systems but also pave a new avenue for the creation of a novel family of bulk heterostructures with customized 2D properties.
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Affiliation(s)
- Limin Yan
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
- School of Science, Inner Mongolia University of Science and Technology, Baotou 014010, People's Republic of China
- State Key Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Zhongyang Li
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Zihan Zhang
- State Key Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Wei Xia
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Mingtao Li
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Nana Li
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Jiayi Guan
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
- School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xuqiang Liu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Jiahao Ning
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Dongzhou Zhang
- GSECARS, University of Chicago, 9700 S. Cass Avenue, Argonne, Illinois 60439, United States
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Xin Wang
- State Key Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Wenge Yang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
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20
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Shin W, Byeon J, Koo RH, Lim J, Kang JH, Jang AR, Lee JH, Kim JJ, Cha S, Pak S, Lee ST. Toward Ideal Low-Frequency Noise in Monolayer CVD MoS 2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2307196. [PMID: 38773725 DOI: 10.1002/advs.202307196] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2023] [Revised: 03/17/2024] [Indexed: 05/24/2024]
Abstract
The pursuit of sub-1-nm field-effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transition metal dichalcogenides, provide a promising alternative. However, the non-idealities, such as excess low-frequency noise (LFN) in 2D FETs, present substantial hurdles to their realization and commercialization. In this study, ideal LFN characteristics in monolayer MoS2 FETs are attained by engineering the metal-2D semiconductor contact and the subgap density of states (DOS). By probing non-ideal contact resistance effects using CuS and Au electrodes, it is uncovered that excess contact noise in the high drain current (ID) region can be substantially reduced by forming a van der Waals junction with CuS electrodes. Furthermore, thermal annealing effectively mitigates sulfur vacancy-induced subgap density of states (DOS), diminishing excess noise in the low ID region. Through meticulous optimization of metal-2D semiconductor contacts and subgap DOS, alignment of 1/f noise with the pure carrier number fluctuation model is achieved, ultimately achieving the sought-after ideal LFN behavior in monolayer MoS2 FETs. This study underscores the necessity of refining excess noise, heralding improved performance and reliability of 2D electronic devices.
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Affiliation(s)
- Wonjun Shin
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon, 16419, Republic of Korea
| | - Junsung Byeon
- Department of Physics, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Ryun-Han Koo
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jungmoon Lim
- Department of Physics, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Jung Hyeon Kang
- Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan, 31080, Republic of Korea
| | - A-Rang Jang
- Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan, 31080, Republic of Korea
| | - Jong-Ho Lee
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
- Ministry of Science and ICT, Sejong, 30109, Republic of Korea
| | - Jae-Joon Kim
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - SeungNam Cha
- Department of Physics, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Sangyeon Pak
- School of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
| | - Sung-Tae Lee
- School of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
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21
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Su S, Zhao J, Ly TH. Scanning Probe Microscopies for Characterizations of 2D Materials. SMALL METHODS 2024:e2400211. [PMID: 38766949 DOI: 10.1002/smtd.202400211] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Revised: 04/12/2024] [Indexed: 05/22/2024]
Abstract
2D materials are intriguing due to their remarkably thin and flat structure. This unique configuration allows the majority of their constituent atoms to be accessible on the surface, facilitating easier electron tunneling while generating weak surface forces. To decipher the subtle signals inherent in these materials, the application of techniques that offer atomic resolution (horizontal) and sub-Angstrom (z-height vertical) sensitivity is crucial. Scanning probe microscopy (SPM) emerges as the quintessential tool in this regard, owing to its atomic-level spatial precision, ability to detect unitary charges, responsiveness to pico-newton-scale forces, and capability to discern pico-ampere currents. Furthermore, the versatility of SPM to operate under varying environmental conditions, such as different temperatures and in the presence of various gases or liquids, opens up the possibility of studying the stability and reactivity of 2D materials in situ. The characteristic flatness, surface accessibility, ultra-thinness, and weak signal strengths of 2D materials align perfectly with the capabilities of SPM technologies, enabling researchers to uncover the nuanced behaviors and properties of these advanced materials at the nanoscale and even the atomic scale.
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Affiliation(s)
- Shaoqiang Su
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, 999077, China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, 999077, China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Hong Kong, 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, China
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22
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Pan B, Dou Z, Su M, Li Y, Wu J, Chang W, Wang P, Zhang L, Zhao L, Zhao M, Wang SD. Direct Selective Epitaxy of 2D Sb 2Te 3 onto Monolayer WS 2 for Vertical p-n Heterojunction Photodetectors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:884. [PMID: 38786841 PMCID: PMC11124104 DOI: 10.3390/nano14100884] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Revised: 05/10/2024] [Accepted: 05/13/2024] [Indexed: 05/25/2024]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDs) possess appropriate bandgaps and interact via van der Waals (vdW) forces between layers, effectively overcoming lattice compatibility challenges inherent in traditional heterojunctions. This property facilitates the creation of heterojunctions with customizable bandgap alignments. However, the prevailing method for creating heterojunctions with 2D-TMDs relies on the low-efficiency technique of mechanical exfoliation. Sb2Te3, recognized as a notable p-type semiconductor, emerges as a versatile component for constructing diverse vertical p-n heterostructures with 2D-TMDs. This study presents the successful large-scale deposition of 2D Sb2Te3 onto inert mica substrates, providing valuable insights into the integration of Sb2Te3 with 2D-TMDs to form heterostructures. Building upon this initial advancement, a precise epitaxial growth method for Sb2Te3 on pre-existing WS2 surfaces on SiO2/Si substrates is achieved through a two-step chemical vapor deposition process, resulting in the formation of Sb2Te3/WS2 heterojunctions. Finally, the development of 2D Sb2Te3/WS2 optoelectronic devices is accomplished, showing rapid response times, with a rise/decay time of 305 μs/503 μs, respectively.
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Affiliation(s)
- Baojun Pan
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, China
| | - Zhenjun Dou
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials & Industry Technology, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Mingming Su
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, China
| | - Ya Li
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, China
| | - Jialing Wu
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, China
| | - Wanwan Chang
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, China
| | - Peijian Wang
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials & Industry Technology, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials & Industry Technology, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Lei Zhao
- School of Electronic Engineering, Lanzhou City University, Lanzhou 730070, China
| | - Mei Zhao
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials & Industry Technology, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Sui-Dong Wang
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, China
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23
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Piquero-Zulaica I, Hu W, Seitsonen AP, Haag F, Küchle J, Allegretti F, Lyu Y, Chen L, Wu K, El-Fattah ZMA, Aktürk E, Klyatskaya S, Ruben M, Muntwiler M, Barth JV, Zhang YQ. Unconventional Band Structure via Combined Molecular Orbital and Lattice Symmetries in a Surface-Confined Metallated Graphdiyne Sheet. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405178. [PMID: 38762788 DOI: 10.1002/adma.202405178] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Indexed: 05/20/2024]
Abstract
Graphyne (GY) and graphdiyne (GDY)-based monolayers represent the next generation 2D carbon-rich materials with tunable structures and properties surpassing those of graphene. However, the detection of band formation in atomically thin GY/GDY analogues has been challenging, as both long-range order and atomic precision have to be fulfilled in the system. The present work reports direct evidence of band formation in on-surface synthesized metallated Ag-GDY sheets with mesoscopic (≈1 µm) regularity. Employing scanning tunneling and angle-resolved photoemission spectroscopies, energy-dependent transitions of real-space electronic states above the Fermi level and formation of the valence band are respectively observed. Furthermore, density functional theory (DFT) calculations corroborate the observations and reveal that doubly degenerate frontier molecular orbitals on a honeycomb lattice give rise to flat, Dirac and Kagome bands close to the Fermi level. DFT modeling also indicates an intrinsic band gap for the pristine sheet material, which is retained for a bilayer with h-BN, whereas adsorption-induced in-gap electronic states evolve at the synthesis platform with Ag-GDY decorating the (111) facet of silver. These results illustrate the tremendous potential for engineering novel band structures via molecular orbital and lattice symmetries in atomically precise 2D carbon materials.
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Affiliation(s)
| | - Wenqi Hu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Ari Paavo Seitsonen
- Département de Chemie, École Normale Supérieure, 24 rue Lhomond, Paris, F-75005, France
| | - Felix Haag
- Physics Department E20, Technical University of Munich, D-85748, Garching, Germany
| | - Johannes Küchle
- Physics Department E20, Technical University of Munich, D-85748, Garching, Germany
| | - Francesco Allegretti
- Physics Department E20, Technical University of Munich, D-85748, Garching, Germany
| | - Yuanhao Lyu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lan Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Zakaria M Abd El-Fattah
- Physics Department, Faculty of Science, Al-Azhar University, Nasr City, Cairo, E-11884, Egypt
- Physics Department, Faculty of Science, Galala University, New Galala City, Suez, 43511, Egypt
| | - Ethem Aktürk
- Department of Physics, Adnan Menderes University, Aydin, 09100, Turkey
| | - Svetlana Klyatskaya
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76344, Eggenstein-Leopoldshafen, Germany
| | - Mario Ruben
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76344, Eggenstein-Leopoldshafen, Germany
- IPCMS-CNRS, Université de Strasbourg, 23 rue de Loess, Strasbourg, 67034, France
| | - Matthias Muntwiler
- Paul Scherrer Institute, Forschungsstrasse 111, Villigen PSI, 5232, Switzerland
| | - Johannes V Barth
- Physics Department E20, Technical University of Munich, D-85748, Garching, Germany
| | - Yi-Qi Zhang
- Physics Department E20, Technical University of Munich, D-85748, Garching, Germany
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
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24
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Sun Z, Su Y, Zhi A, Gao Z, Han X, Wu K, Bao L, Huang Y, Shi Y, Bai X, Cheng P, Chen L, Wu K, Tian X, Wu C, Feng B. Evidence for multiferroicity in single-layer CuCrSe 2. Nat Commun 2024; 15:4252. [PMID: 38762594 PMCID: PMC11102510 DOI: 10.1038/s41467-024-48636-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Accepted: 05/09/2024] [Indexed: 05/20/2024] Open
Abstract
Multiferroic materials, which simultaneously exhibit ferroelectricity and magnetism, have attracted substantial attention due to their fascinating physical properties and potential technological applications. With the trends towards device miniaturization, there is an increasing demand for the persistence of multiferroicity in single-layer materials at elevated temperatures. Here, we report high-temperature multiferroicity in single-layer CuCrSe2, which hosts room-temperature ferroelectricity and 120 K ferromagnetism. Notably, the ferromagnetic coupling in single-layer CuCrSe2 is enhanced by the ferroelectricity-induced orbital shift of Cr atoms, which is distinct from both types I and II multiferroicity. These findings are supported by a combination of second-harmonic generation, piezo-response force microscopy, scanning transmission electron microscopy, magnetic, and Hall measurements. Our research provides not only an exemplary platform for delving into intrinsic magnetoelectric interactions at the single-layer limit but also sheds light on potential development of electronic and spintronic devices utilizing two-dimensional multiferroics.
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Affiliation(s)
- Zhenyu Sun
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Chemistry, Brown University, Providence, RI, 02912, USA
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yueqi Su
- School of Chemistry and Materials Sciences, University of Science and Technology of China, Hefei, 230026, China
- CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Hefei, 230026, China
- Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Hefei, 230026, China
| | - Aomiao Zhi
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhicheng Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xu Han
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Kang Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lihong Bao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Youguo Shi
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xuedong Bai
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Peng Cheng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lan Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
| | - Xuezeng Tian
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Changzheng Wu
- School of Chemistry and Materials Sciences, University of Science and Technology of China, Hefei, 230026, China.
- CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Hefei, 230026, China.
- Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Hefei, 230026, China.
| | - Baojie Feng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China.
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25
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Yang R, Mei L, Lin Z, Fan Y, Lim J, Guo J, Liu Y, Shin HS, Voiry D, Lu Q, Li J, Zeng Z. Intercalation in 2D materials and in situ studies. Nat Rev Chem 2024:10.1038/s41570-024-00605-2. [PMID: 38755296 DOI: 10.1038/s41570-024-00605-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 04/11/2024] [Indexed: 05/18/2024]
Abstract
Intercalation of atoms, ions and molecules is a powerful tool for altering or tuning the properties - interlayer interactions, in-plane bonding configurations, Fermi-level energies, electronic band structures and spin-orbit coupling - of 2D materials. Intercalation can induce property changes in materials related to photonics, electronics, optoelectronics, thermoelectricity, magnetism, catalysis and energy storage, unlocking or improving the potential of 2D materials in present and future applications. In situ imaging and spectroscopy technologies are used to visualize and trace intercalation processes. These techniques provide the opportunity for deciphering important and often elusive intercalation dynamics, chemomechanics and mechanisms, such as the intercalation pathways, reversibility, uniformity and speed. In this Review, we discuss intercalation in 2D materials, beginning with a brief introduction of the intercalation strategies, then we look into the atomic and intrinsic effects of intercalation, followed by an overview of their in situ studies, and finally provide our outlook.
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Affiliation(s)
- Ruijie Yang
- Department of Materials Science and Engineering and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
- Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, Canada
| | - Liang Mei
- Department of Materials Science and Engineering and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, China
| | - Yingying Fan
- Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, Canada
| | - Jongwoo Lim
- Department of Chemistry, Seoul National University, Seoul, Republic of Korea
| | - Jinghua Guo
- Advanced Light Source, Energy Storage and Distributed Resources Division, and Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Yijin Liu
- Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX, USA
| | - Hyeon Suk Shin
- Center for 2D Quantum Heterostructures, Institute for Basic Science, and Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Damien Voiry
- Institut Européen des Membranes, IEM, UMR, Université Montpellier, ENSCM, CNRS, Montpellier, France
| | - Qingye Lu
- Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, Canada.
| | - Ju Li
- Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Zhiyuan Zeng
- Department of Materials Science and Engineering and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China.
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China.
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26
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Patil V, Ghosh S, Basu A, Kuldeep, Dutta A, Agrawal K, Bhatia N, Shah A, Jangade DA, Kulkarni R, Thamizhavel A, Deshmukh MM. Pick-up and assembling of chemically sensitive van der Waals heterostructures using dry cryogenic exfoliation. Sci Rep 2024; 14:11097. [PMID: 38750043 PMCID: PMC11096354 DOI: 10.1038/s41598-024-58935-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Accepted: 04/04/2024] [Indexed: 05/18/2024] Open
Abstract
Assembling atomic layers of van der Waals materials (vdW) combines the physics of two materials, offering opportunities for novel functional devices. Realization of this has been possible because of advancements in nanofabrication processes which often involve chemical processing of the materials under study; this can be detrimental to device performance. To address this issue, we have developed a modified micro-manipulator setup for cryogenic exfoliation, pick up, and transfer of vdW materials to assemble heterostructures. We use the glass transition of a polymer PDMS to cleave a flake into two, followed by its pick-up and drop to form pristine twisted junctions. To demonstrate the potential of the technique, we fabricated twisted heterostructure of Bi2Sr2CaCu2O8+x (BSCCO), a van der Waals high-temperature cuprate superconductor. We also employed this method to re-exfoliate NbSe2 and make twisted heterostructure. Transport measurements of the fabricated devices indicate the high quality of the artificial twisted interface. In addition, we extend this cryogenic exfoliation method for other vdW materials, offering an effective way of assembling heterostructures and twisted junctions with pristine interfaces.
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Affiliation(s)
- Vilas Patil
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, 400005, India
| | - Sanat Ghosh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, 400005, India
| | - Amit Basu
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, 400005, India
| | - Kuldeep
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, 400005, India
| | - Achintya Dutta
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, 400005, India
| | - Khushabu Agrawal
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, 400005, India
| | - Neha Bhatia
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, 400005, India
| | - Amit Shah
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, 400005, India
| | - Digambar A Jangade
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, 400005, India
| | - Ruta Kulkarni
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, 400005, India
| | - A Thamizhavel
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, 400005, India
| | - Mandar M Deshmukh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, 400005, India.
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Meng J, Lee C, Li Z. Adjustment methods of Schottky barrier height in one- and two-dimensional semiconductor devices. Sci Bull (Beijing) 2024; 69:1342-1352. [PMID: 38490891 DOI: 10.1016/j.scib.2024.03.003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 01/10/2024] [Accepted: 02/02/2024] [Indexed: 03/17/2024]
Abstract
The Schottky contact which is a crucial interface between semiconductors and metals is becoming increasingly significant in nano-semiconductor devices. A Schottky barrier, also known as the energy barrier, controls the depletion width and carrier transport across the metal-semiconductor interface. Controlling or adjusting Schottky barrier height (SBH) has always been a vital issue in the successful operation of any semiconductor device. This review provides a comprehensive overview of the static and dynamic adjustment methods of SBH, with a particular focus on the recent advancements in nano-semiconductor devices. These methods encompass the work function of the metals, interface gap states, surface modification, image-lowering effect, external electric field, light illumination, and piezotronic effect. We also discuss strategies to overcome the Fermi-level pinning effect caused by interface gap states, including van der Waals contact and 1D edge metal contact. Finally, this review concludes with future perspectives in this field.
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Affiliation(s)
- Jianping Meng
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China; School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore; Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore 117608, Singapore.
| | - Zhou Li
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China; School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
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28
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Kistner-Morris J, Shi A, Liu E, Arp T, Farahmand F, Taniguchi T, Watanabe K, Aji V, Lui CH, Gabor N. Electric-field tunable Type-I to Type-II band alignment transition in MoSe 2/WS 2 heterobilayers. Nat Commun 2024; 15:4075. [PMID: 38744965 PMCID: PMC11093968 DOI: 10.1038/s41467-024-48321-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2023] [Accepted: 04/22/2024] [Indexed: 05/16/2024] Open
Abstract
Semiconductor heterojunctions are ubiquitous components of modern electronics. Their properties depend crucially on the band alignment at the interface, which may exhibit straddling gap (type-I), staggered gap (type-II) or broken gap (type-III). The distinct characteristics and applications associated with each alignment make it highly desirable to switch between them within a single material. Here we demonstrate an electrically tunable transition between type-I and type-II band alignments in MoSe2/WS2 heterobilayers by investigating their luminescence and photocurrent characteristics. In their intrinsic state, these heterobilayers exhibit a type-I band alignment, resulting in the dominant intralayer exciton luminescence from MoSe2. However, the application of a strong interlayer electric field induces a transition to a type-II band alignment, leading to pronounced interlayer exciton luminescence. Furthermore, the formation of the interlayer exciton state traps free carriers at the interface, leading to the suppression of interlayer photocurrent and highly nonlinear photocurrent-voltage characteristics. This breakthrough in electrical band alignment control, interlayer exciton manipulation, and carrier trapping heralds a new era of versatile optical and (opto)electronic devices composed of van der Waals heterostructures.
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Affiliation(s)
- Jed Kistner-Morris
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
| | - Ao Shi
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
| | - Erfu Liu
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Trevor Arp
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
- Department of Physics, University of California, Santa Barbara, CA, 93106, USA
| | - Farima Farahmand
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Vivek Aji
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
| | - Chun Hung Lui
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA.
| | - Nathaniel Gabor
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA.
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29
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Altvater M, Muratore C, Snure M, Glavin NR. Two-Step Conversion of Metal and Metal Oxide Precursor Films to 2D Transition Metal Dichalcogenides and Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400463. [PMID: 38733217 DOI: 10.1002/smll.202400463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Revised: 04/11/2024] [Indexed: 05/13/2024]
Abstract
The widely studied class of two-dimensional (2D) materials known as transition metal dichalcogenides (TMDs) are now well-poised to be employed in real-world applications ranging from electronic logic and memory devices to gas and biological sensors. Several scalable thin film synthesis techniques have demonstrated nanoscale control of TMD material thickness, morphology, structure, and chemistry and correlated these properties with high-performing, application-specific device metrics. In this review, the particularly versatile two-step conversion (2SC) method of TMD film synthesis is highlighted. The 2SC technique relies on deposition of a solid metal or metal oxide precursor material, followed by a reaction with a chalcogen vapor at an elevated temperature, converting the precursor film to a crystalline TMD. Herein, the variables at each step of the 2SC process including the impact of the precursor film material and deposition technique, the influence of gas composition and temperature during conversion, as well as other factors controlling high-quality 2D TMD synthesis are considered. The specific advantages of the 2SC approach including deposition on diverse substrates, low-temperature processing, orientation control, and heterostructure synthesis, among others, are featured. Finally, emergent opportunities that take advantage of the 2SC approach are discussed to include next-generation electronics, sensing, and optoelectronic devices, as well as catalysis for energy-related applications.
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Affiliation(s)
- Michael Altvater
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA
- UES Inc., Dayton, OH, 45432, USA
| | - Christopher Muratore
- Department of Chemical and Materials Engineering, University of Dayton, Dayton, 45469, OH, USA
| | - Michael Snure
- Air Force Research Laboratory, Sensors Directorate, WPAFB, OH, 45433, USA
| | - Nicholas R Glavin
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA
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30
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Zhu X, Sun J, Feng S, Guo H. Moiré band renormalization due to lattice mismatch in bilayer graphene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:315502. [PMID: 38663420 DOI: 10.1088/1361-648x/ad43a3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2023] [Accepted: 04/25/2024] [Indexed: 05/08/2024]
Abstract
We investigated the band renormalization caused by the compressive-strain-induced lattice mismatch in parallel AA stacked bilayer graphene using two complementary methods: the tight-binding approach and the low-energy continuum theory. While a large mismatch does not alter the low-energy bands, a small one reduces the bandwidth of the low-energy bands along with a decrease in the Fermi velocity. In the tiny-mismatch regime, the low-energy continuum theory reveals that the long-period moiré pattern extensively renormalizes the low-energy bands, resulting in a significant reduction of bandwidth. Meanwhile, the Fermi velocity exhibits an oscillatory behavior and approaches zero at specific mismatches. However, the resulting low-energy bands are not perfectly isolated flat, as seen in twisted bilayer graphene at magic angles. These findings provide a deeper understanding of moiré physics and offer valuable guidance for related experimental studies in creating moiré superlattices using two-dimensional van der Waals heterostructures.
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Affiliation(s)
- Xingchuan Zhu
- Interdisciplinary Center for Fundamental and Frontier Sciences, Nanjing University of Science and Technology, Jiangyin, Jiangsu 214443, People's Republic of China
| | - Junsong Sun
- School of Physics, Beihang University, Beijing 100191, People's Republic of China
| | - Shiping Feng
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Huaiming Guo
- School of Physics, Beihang University, Beijing 100191, People's Republic of China
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31
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Kundu A, Dhillon AK, Singh R, Barman S, Siddhanta S, Chakraborty B. Evolution of Mn-Bi 2O 3 from the Mn-doped Bi 3O 4Br electro(pre)catalyst during the oxygen evolution reaction. Dalton Trans 2024; 53:8020-8032. [PMID: 38651992 DOI: 10.1039/d4dt00633j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
Mn-doped Bi3O4Br has been synthesized using a solvothermal route. The undoped Bi3O4Br and Mn-Bi3O4Br materials possess orthorhombic unit cells with two distinct Bi sites forming a layered atomic arrangement. The shift in the (020) plane in the powder X-ray diffraction (PXRD) pattern confirms Mn-doping in the Bi3O4Br lattice. Elemental mapping indicated 7% Mn doping in the Bi3O4Br lattice structure. A core-level X-ray photoelectron study (XPS) indicates the presence of BiIII and MnII valence-states in Mn-Bi3O4Br. Doping with a cation (MnII) containing a different charge and ionic radius resulted in vacancy/defects in Mn-Bi3O4Br which further altered its electronic structure by reducing the indirect band gap, beneficial for electron conduction and electrocatalysis. The irreversible MnII to MnIII transformation at a potential of 1.48 V (vs. RHE) precedes the electrochemical oxygen evolution reaction (OER). The Mn-doped electrocatalyst achieved 10 mA cm-2 current density at 337 mV overpotential, while the pristine Bi3O4Br required 385 mV overpotential to reach the same activity. The pronounced OER activity of the Mn-Bi3O4Br sample over the pristine Bi3O4Br highlights the necessity of MnII doping. The superior activity of the Mn-Bi3O4Br catalyst over that of Bi3O4Br is due to a low Tafel slope, better double-layer capacitance (Cdl), and small charge-transfer resistance (Rct). The chronoamperometry (CA) study depicts long-term stability for 12 h at 20 mA cm-2. An electrolyzer fabricated as Pt(-)/(+)Mn-Bi3O4Br can deliver 10 mA cm-2 at a cell potential of 2.05 V. The post-CA-OER analyses of the anode confirmed the leaching of [Br-] followed by in situ formation of Mn-doped Bi2O3 as the electrocatalytically active species. Herein, an ultra-low Mn-doping into Bi3O4Br leads to an improvement in the electrocatalytic performance of the inactive Bi3O4Br material.
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Affiliation(s)
- Avinava Kundu
- Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, 110016, New Delhi, India.
| | - Ashish Kumar Dhillon
- Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, 110016, New Delhi, India.
| | - Ruchi Singh
- Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, 110016, New Delhi, India.
| | - Sanmitra Barman
- Center for Advanced Materials and Devices (CAMD), BML Munjal University, Haryana, India.
| | - Soumik Siddhanta
- Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, 110016, New Delhi, India.
| | - Biswarup Chakraborty
- Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, 110016, New Delhi, India.
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32
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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33
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Xiong H, Nie X, Zhao L, Deng S. Engineering Symmetry Breaking in Twisted MoS 2-MoSe 2 Heterostructures for Optimal Thermoelectric Performance. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38709893 DOI: 10.1021/acsami.4c03767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
Engineering symmetry breaking in thermoelectric materials holds promise for achieving an optimal thermoelectric efficiency. van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) provide critical opportunities for manipulating the intrinsic symmetry through in-plane symmetry breaking interlayer twists and out-of-plane symmetry breaking heterostructures. Herein, the symmetry-dependent thermoelectric properties of MoS2 and MoSe2 obtained via first-principles calculations are reported, yielding an advanced ZT of 2.96 at 700 K. The underlying mechanisms reveal that the in-plane symmetry breaking results in a lowest thermal conductivity of 1.96 W·m-1·K-1. Additionally, the electric properties can be significantly modulated through band flattening and bandgap alteration, stemming directly from the modified interlayer electronic coupling strength owing to spatial repulsion effects. In addition, out-of-plane symmetry breaking induces band splitting, leading to a decrease in the degeneracy and complex band structures. Consequently, the power factor experiences a notable enhancement from ∼1.32 to 1.71 × 10-2 W·m-1·K-2, which is attributed to the intricate spatial configuration of charge densities and the resulting intensified intralayer electronic coupling. Upon simultaneous implementation of in-plane and out-of-plane symmetry breaking, the TMDCs exhibit an indirect bandgap to direct bandgap transition compared to the pristine structure. This work demonstrates an avenue for optimizing thermoelectric performance of TMDCs through the implementation of symmetry breaking.
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Affiliation(s)
- Hanping Xiong
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
| | - Xianhua Nie
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
| | - Li Zhao
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
| | - Shuai Deng
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
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34
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Groll M, Bürger J, Caltzidis I, Jöns KD, Schmidt WG, Gerstmann U, Lindner JKN. DFT-Assisted Investigation of the Electric Field and Charge Density Distribution of Pristine and Defective 2D WSe 2 by Differential Phase Contrast Imaging. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311635. [PMID: 38703033 DOI: 10.1002/smll.202311635] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 04/02/2024] [Indexed: 05/06/2024]
Abstract
Most properties of solid materials are defined by their internal electric field and charge density distributions which so far are difficult to measure with high spatial resolution. Especially for 2D materials, the atomic electric fields influence the optoelectronic properties. In this study, the atomic-scale electric field and charge density distribution of WSe2 bi- and trilayers are revealed using an emerging microscopy technique, differential phase contrast (DPC) imaging in scanning transmission electron microscopy (STEM). For pristine material, a higher positive charge density located at the selenium atomic columns compared to the tungsten atomic columns is obtained and tentatively explained by a coherent scattering effect. Furthermore, the change in the electric field distribution induced by a missing selenium atomic column is investigated. A characteristic electric field distribution in the vicinity of the defect with locally reduced magnitudes compared to the pristine lattice is observed. This effect is accompanied by a considerable inward relaxation of the surrounding lattice, which according to first principles DFT calculation is fully compatible with a missing column of Se atoms. This shows that DPC imaging, as an electric field sensitive technique, provides additional and remarkable information to the otherwise only structural analysis obtained with conventional STEM imaging.
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Affiliation(s)
- Maja Groll
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Julius Bürger
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Ioannis Caltzidis
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Klaus D Jöns
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Wolf Gero Schmidt
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Uwe Gerstmann
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Jörg K N Lindner
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
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35
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Imran M, Musa MY, Rauf S, Lu D, Li R, Tian Y. Polarization-insensitive perfect absorption in van der waals hyper-structure. Sci Rep 2024; 14:10068. [PMID: 38698124 PMCID: PMC11066130 DOI: 10.1038/s41598-024-60891-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Accepted: 04/29/2024] [Indexed: 05/05/2024] Open
Abstract
Infrared perfect absorption has been widely investigated due to its potential applications in photodetectors, photovoltaics and medical diagnostics. In this report, we demonstrate that at particular infrared frequencies, a simple planar structure made up of graphene-hexagonal Boron Nitride (hBN) hyper-structure is able to nearly perfectly absorb incident light irrespective of its polarization (Transverse-Magnetic TM, or Transverse-Electric TE). By using this interferenceless technique, the hyper-structure achieves nearly zero reflectance at a wide range of angles in a narrow frequency band. We analytically predict the condition of achieving such an important feature of perfect absorption for both TM and TE polarizations. Interestingly, the infrared perfect absorption can be redshifted by increasing the thickness of the hBN layers and blueshifted by increasing the graphene's chemical potential. Such flexible control of infrared perfect absorption offers a new tool for controlling electromagnetic waves and has potential applications in photodetection and other light control applications.
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Affiliation(s)
- Muhammad Imran
- College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518000, China
| | - Muhyiddeen Yahya Musa
- Department of Agriculture and Bio-Environmental Engineering Technology, Audu Bako College of Agriculture Dambatta, Kano, Nigeria
| | - Sajid Rauf
- College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518000, China
| | - Dajiang Lu
- College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518000, China
| | - Rujiang Li
- National Key Laboratory of Radar Detection and Sensing, School of Electronic Engineering, Xidian University, Xi'an, 710071, China.
| | - Yibin Tian
- College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518000, China.
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36
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Yang J, Zhang Y, Ge Y, Tang S, Li J, Zhang H, Shi X, Wang Z, Tian X. Interlayer Engineering of Layered Materials for Efficient Ion Separation and Storage. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311141. [PMID: 38306408 DOI: 10.1002/adma.202311141] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Revised: 01/19/2024] [Indexed: 02/04/2024]
Abstract
Layered materials are characterized by strong in-plane covalent chemical bonds within each atomic layer and weak out-of-plane van der Waals (vdW) interactions between adjacent layers. The non-bonding nature between neighboring layers naturally results in a vdW gap, which enables the insertion of guest species into the interlayer gap. Rational design and regulation of interlayer nanochannels are crucial for converting these layered materials and their 2D derivatives into ion separation membranes or battery electrodes. Herein, based on the latest progress in layered materials and their derivative nanosheets, various interlayer engineering methods are briefly introduced, along with the effects of intercalated species on the crystal structure and interlayer coupling of the host layered materials. Their applications in the ion separation and energy storage fields are then summarized, with a focus on interlayer engineering to improve selective ion transport and ion storage performance. Finally, future research opportunities and challenges in this emerging field are comprehensively discussed.
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Affiliation(s)
- Jinlin Yang
- School of Marine Science and Engineering, State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou, 570228, China
| | - Yu Zhang
- School of Marine Science and Engineering, State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou, 570228, China
| | - Yanzeng Ge
- School of Marine Science and Engineering, State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou, 570228, China
| | - Si Tang
- School of Marine Science and Engineering, State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou, 570228, China
| | - Jing Li
- School of Marine Science and Engineering, State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou, 570228, China
| | - Hui Zhang
- School of Marine Science and Engineering, State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou, 570228, China
| | - Xiaodong Shi
- School of Marine Science and Engineering, State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou, 570228, China
| | - Zhitong Wang
- School of Marine Science and Engineering, State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou, 570228, China
| | - Xinlong Tian
- School of Marine Science and Engineering, State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou, 570228, China
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37
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Tang X, Hao Q, Hou X, Lan L, Li M, Yao L, Zhao X, Ni Z, Fan X, Qiu T. Exploring and Engineering 2D Transition Metal Dichalcogenides toward Ultimate SERS Performance. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312348. [PMID: 38302855 DOI: 10.1002/adma.202312348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2023] [Revised: 01/23/2024] [Indexed: 02/03/2024]
Abstract
Surface-enhanced Raman spectroscopy (SERS) is an ultrasensitive surface analysis technique that is widely used in chemical sensing, bioanalysis, and environmental monitoring. The design of the SERS substrates is crucial for obtaining high-quality SERS signals. Recently, 2D transition metal dichalcogenides (2D TMDs) have emerged as high-performance SERS substrates due to their superior stability, ease of fabrication, biocompatibility, controllable doping, and tunable bandgaps and excitons. In this review, a systematic overview of the latest advancements in 2D TMDs SERS substrates is provided. This review comprehensively summarizes the candidate 2D TMDs SERS materials, elucidates their working principles for SERS, explores the strategies to optimize their SERS performance, and highlights their practical applications. Particularly delved into are the material engineering strategies, including defect engineering, alloy engineering, thickness engineering, and heterojunction engineering. Additionally, the challenges and future prospects associated with the development of 2D TMDs SERS substrates are discussed, outlining potential directions that may lead to significant breakthroughs in practical applications.
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Affiliation(s)
- Xiao Tang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Qi Hao
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Xiangyu Hou
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
- Department of Chemistry, National University of Singapore, Singapore, 117542, Singapore
| | - Leilei Lan
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
- School of Mechanics and Optoelectronic Physics, Anhui University of Science and Technology, Huainan, 232001, China
| | - Mingze Li
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Lei Yao
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Xing Zhao
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Zhenhua Ni
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Xingce Fan
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Teng Qiu
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
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38
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Wang Z, Fu S, Zhang W, Liang B, Liu TJ, Hambsch M, Pöhls JF, Wu Y, Zhang J, Lan T, Li X, Qi H, Polozij M, Mannsfeld SCB, Kaiser U, Bonn M, Weitz RT, Heine T, Parkin SSP, Wang HI, Dong R, Feng X. A Cu 3BHT-Graphene van der Waals Heterostructure with Strong Interlayer Coupling for Highly Efficient Photoinduced Charge Separation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311454. [PMID: 38381920 DOI: 10.1002/adma.202311454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 02/09/2024] [Indexed: 02/23/2024]
Abstract
Two-dimensional van der Waals heterostructures (2D vdWhs) are of significant interest due to their intriguing physical properties critically defined by the constituent monolayers and their interlayer coupling. Synthetic access to 2D vdWhs based on chemically tunable monolayer organic 2D materials remains challenging. Herein, the fabrication of a novel organic-inorganic bilayer vdWh by combining π-conjugated 2D coordination polymer (2DCP, i.e., Cu3BHT, BHT = benzenehexathiol) with graphene is reported. Monolayer Cu3BHT with detectable µm2-scale uniformity and atomic flatness is synthesized using on-water surface chemistry. A combination of diffraction and imaging techniques enables the determination of the crystal structure of monolayer Cu3BHT with atomic precision. Leveraging the strong interlayer coupling, Cu3BHT-graphene vdWh exhibits highly efficient photoinduced interlayer charge separation with a net electron transfer efficiency of up to 34% from Cu3BHT to graphene, superior to those of reported bilayer 2D vdWhs and molecular-graphene vdWhs. This study unveils the potential for developing novel 2DCP-based vdWhs with intriguing physical properties.
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Affiliation(s)
- Zhiyong Wang
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
| | - Shuai Fu
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Department of Molecular Spectroscopy, Max Planck Institute for Polymer Research, 55128, Mainz, Germany
| | - Wenjie Zhang
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Baokun Liang
- Central Facility for Electron Microscopy, Electron Microscopy of Materials Science, Ulm University, 89081, Ulm, Germany
| | - Tsai-Jung Liu
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
| | - Mike Hambsch
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universität Dresden, 01069, Dresden, Germany
| | - Jonas F Pöhls
- First Institute of Physics, Georg August University of Göttingen, 37077, Göttingen, Germany
| | - Yufeng Wu
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Jianjun Zhang
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
| | - Tianshu Lan
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Xiaodong Li
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
| | - Haoyuan Qi
- Central Facility for Electron Microscopy, Electron Microscopy of Materials Science, Ulm University, 89081, Ulm, Germany
| | - Miroslav Polozij
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Resource Ecology, 04318, Leipzig, Germany
| | - Stefan C B Mannsfeld
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universität Dresden, 01069, Dresden, Germany
| | - Ute Kaiser
- Central Facility for Electron Microscopy, Electron Microscopy of Materials Science, Ulm University, 89081, Ulm, Germany
| | - Mischa Bonn
- Department of Molecular Spectroscopy, Max Planck Institute for Polymer Research, 55128, Mainz, Germany
| | - R Thomas Weitz
- First Institute of Physics, Georg August University of Göttingen, 37077, Göttingen, Germany
| | - Thomas Heine
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Resource Ecology, 04318, Leipzig, Germany
- Department of Chemistry, Yonsei University, 120-749, Seoul, Republic of Korea
| | - Stuart S P Parkin
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Hai I Wang
- Department of Molecular Spectroscopy, Max Planck Institute for Polymer Research, 55128, Mainz, Germany
- Nanophotonics, Debye Institute for Nanomaterials Science, Utrecht University, Utrecht, 3584 CC, the Netherlands
| | - Renhao Dong
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Key Laboratory of Colloid and Interface Chemistry of the Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan, 250199, China
| | - Xinliang Feng
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
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Wang Y, Yang X, Liang H, Zhao J, Zhang J. Macroscale Superlubricity on Nanoscale Graphene Moiré Structure-Assembled Surface via Counterface Hydrogen Modulation. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2309701. [PMID: 38483889 PMCID: PMC11109616 DOI: 10.1002/advs.202309701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 02/23/2024] [Indexed: 05/23/2024]
Abstract
Interlayer incommensurateness slippage is an excellent pathway to realize superlubricity of van der Waals materials; however, it is instable and heavily depends on twisted angle and super-smooth substrate which pose great challenges for the practical application of superlubricity. Here, macroscale superlubricity (0.001) is reported on countless nanoscale graphene moiré structure (GMS)-assembled surface via counterface hydrogen (H) modulation. The GMS-assembled surface is formed on grinding balls via sphere-triggered strain engineering. By the H modulation of counterface diamond-like carbon (25 at.% H), the wear of GMS-assembled surface is significantly reduced and a steadily superlubric sliding interface between them is achieved, based on assembly face charge depletion and H-induced assembly edge weakening. Furthermore, the superlubricity between GMS-assembled and DLC25 surfaces holds true in wide ranges of normal load (7-11 N), sliding velocity (0.5-27 cm -1s), contact area (0.4×104-3.7×104 µm2), and contact pressure (0.19-1.82 GPa). Atomistic simulations confirm the preferential formation of GMS on a sphere, and demonstrate the superlubricity on GMS-assembled surface via counterface H modulation. The results provide an efficient tribo-pairing strategy to achieve robust superlubricity, which is of significance for the engineering application of superlubricity.
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Affiliation(s)
- Yongfu Wang
- State Key Laboratory of Solid LubricationLanzhou Institute of Chemical PhysicsChinese Academy of ScienceLanzhou730000China
- Key Laboratory of Science and Technology on Wear and Protection of MaterialsLanzhou Institute of Chemical PhysicsChinese Academy of SciencesLanzhou730000China
| | - Xing Yang
- State Key Laboratory of Solid LubricationLanzhou Institute of Chemical PhysicsChinese Academy of ScienceLanzhou730000China
| | - Huiting Liang
- State Key Laboratory of Solid LubricationLanzhou Institute of Chemical PhysicsChinese Academy of ScienceLanzhou730000China
| | - Jun Zhao
- Division of Machine ElementsDepartment of Engineering Sciences and MathematicsLuleå University of TechnologyLuleåSE‐97187Sweden
| | - Junyan Zhang
- State Key Laboratory of Solid LubricationLanzhou Institute of Chemical PhysicsChinese Academy of ScienceLanzhou730000China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
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40
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Plačkić A, Neubert TJ, Patel K, Kuhl M, Watanabe K, Taniguchi T, Zurutuza A, Sordan R, Balasubramanian K. Electrochemistry at the Edge of a van der Waals Heterostructure. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306361. [PMID: 38109121 DOI: 10.1002/smll.202306361] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Revised: 10/19/2023] [Indexed: 12/19/2023]
Abstract
Artificial van der Waals heterostructures, obtained by stacking two-dimensional (2D) materials, represent a novel platform for investigating physicochemical phenomena and applications. Here, the electrochemistry at the one-dimensional (1D) edge of a graphene sheet, sandwiched between two hexagonal boron nitride (hBN) flakes, is reported. When such an hBN/graphene/hBN heterostructure is immersed in a solution, the basal plane of graphene is encapsulated by hBN, and the graphene edge is exclusively available in the solution. This forms an electrochemical nanoelectrode, enabling the investigation of electron transfer using several redox probes, e.g., ferrocene(di)methanol, hexaammineruthenium, methylene blue, dopamine and ferrocyanide. The low capacitance of the van der Waals edge electrode facilitates cyclic voltammetry at very high scan rates (up to 1000 V s-1), allowing voltammetric detection of redox species down to micromolar concentrations with sub-second time resolution. The nanoband nature of the edge electrode allows operation in water without added electrolyte. Finally, two adjacent edge electrodes are realized in a redox-cycling format. All the above-mentioned phenomena can be investigated at the edge, demonstrating that nanoscale electrochemistry is a new application avenue for van der Waals heterostructures. Such an edge electrode will be useful for studying electron transfer mechanisms and the detection of analyte species in ultralow sample volumes.
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Affiliation(s)
- Aleksandra Plačkić
- L-NESS, Department of Physics, Politecnico di Milano, Via Anzani 42, Como, 22100, Italy
- BioSense Institute, University of Novi Sad, Dr Zorana Đinđića 1, Novi Sad, 21000, Serbia
| | - Tilmann J Neubert
- School of Analytical Sciences Adlershof (SALSA), IRIS Adlershof & Department of Chemistry, Humboldt-Universität zu Berlin, Unter den Linden 6, 10099, Berlin, Germany
| | - Kishan Patel
- L-NESS, Department of Physics, Politecnico di Milano, Via Anzani 42, Como, 22100, Italy
| | - Michel Kuhl
- School of Analytical Sciences Adlershof (SALSA), IRIS Adlershof & Department of Chemistry, Humboldt-Universität zu Berlin, Unter den Linden 6, 10099, Berlin, Germany
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Amaia Zurutuza
- Graphenea Semiconductor SLU, Mikeletegi Pasealekua 83, San Sebastián, 20009, Spain
| | - Roman Sordan
- L-NESS, Department of Physics, Politecnico di Milano, Via Anzani 42, Como, 22100, Italy
| | - Kannan Balasubramanian
- School of Analytical Sciences Adlershof (SALSA), IRIS Adlershof & Department of Chemistry, Humboldt-Universität zu Berlin, Unter den Linden 6, 10099, Berlin, Germany
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41
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Catanzaro A, Genco A, Louca C, Ruiz-Tijerina DA, Gillard DJ, Sortino L, Kozikov A, Alexeev EM, Pisoni R, Hague L, Watanabe K, Taniguchi T, Ensslin K, Novoselov KS, Fal'ko V, Tartakovskii AI. Resonant Band Hybridization in Alloyed Transition Metal Dichalcogenide Heterobilayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309644. [PMID: 38279553 DOI: 10.1002/adma.202309644] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 12/20/2023] [Indexed: 01/28/2024]
Abstract
Bandstructure engineering using alloying is widely utilized for achieving optimized performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, heterobilayers made from monolayers of WSe2 (or MoSe2) and MoxW1 - xSe2 alloy are fabricated and nontrivial tuning of the resultant bandstructure is observed as a function of concentration x. This evolution is monitored by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In MoxW1 - xSe2/WSe2, a strong IX energy shift of ≈100 meV is observed for x varied from 1 to 0.6. However, for x < 0.6 this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe2. This observation is theoretically interpreted as the strong variation of the conduction band K valley for x > 0.6, with IX PL arising from the K - K transition, while for x < 0.6, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K - Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. This work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties.
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Affiliation(s)
- Alessandro Catanzaro
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK
| | - Armando Genco
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK
- Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci, 32, Milano, 20133, Italy
| | - Charalambos Louca
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK
- Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci, 32, Milano, 20133, Italy
| | - David A Ruiz-Tijerina
- Departamento de Física Química, Instituto de Física, Universidad Nacional Autónoma de México, Ciudad de México, C.P., 04510, Mexico, México
| | - Daniel J Gillard
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK
| | - Luca Sortino
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
| | - Aleksey Kozikov
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
- School of Mathematics, Statistics and Physics, Newcastle University, Newcastle upon Tyne, NE1 7RU, UK
| | - Evgeny M Alexeev
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, UK
| | - Riccardo Pisoni
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, Switzerland
| | - Lee Hague
- National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Klaus Ensslin
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, Switzerland
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117546, Singapore
| | - Vladimir Fal'ko
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
- Henry Royce Institute for Advanced Materials, University of Manchester, Manchester, M13 9PL, United Kingdom
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42
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Mosina K, Wu B, Antonatos N, Luxa J, Mazánek V, Söll A, Sedmidubsky D, Klein J, Ross FM, Sofer Z. Electrochemical Intercalation and Exfoliation of CrSBr into Ferromagnetic Fibers and Nanoribbons. SMALL METHODS 2024; 8:e2300609. [PMID: 38158388 DOI: 10.1002/smtd.202300609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2023] [Revised: 11/11/2023] [Indexed: 01/03/2024]
Abstract
Recent studies dedicated to layered van der Waals crystals have attracted significant attention to magnetic atomically thin crystals offering unprecedented opportunities for applications in innovative magnetoelectric, magneto-optic, and spintronic devices. The active search for original platforms for the low-dimensional magnetism study has emphasized the entirely new magnetic properties of two dimensional (2D) semiconductor CrSBr. Herein, for the first time, the electrochemical exfoliation of bulk CrSBr in a non-aqueous environment is demonstrated. Notably, crystal cleavage governed by the structural anisotropy occurred along two directions forming atomically thin and few-layered nanoribbons. The exfoliated material possesses an orthorhombic crystalline structure and strong optical anisotropy, showing the polarization dependencies of Raman signals. The antiferromagnetism exhibited by multilayered CrSBr gives precedence to ferromagnetic ordering in the revealed CrSBr nanostructures. Furthermore, the potential application of CrSBr nanoribbons is pioneered for electrochemical photodetector fabrication and demonstrates its responsivity up to 30 µA cm-2 in the visible spectrum. Moreover, the CrSBr-based anode for lithium-ion batteries exhibited high performance and self-improving abilities. This anticipates that the results will pave the way toward the future study of CrSBr and practical applications in magneto- and optoelectronics.
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Affiliation(s)
- Kseniia Mosina
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Bing Wu
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Nikolas Antonatos
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Jan Luxa
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Vlastimil Mazánek
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Aljoscha Söll
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - David Sedmidubsky
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Julian Klein
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
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Dong W, Dai Z, Liu L, Zhang Z. Toward Clean 2D Materials and Devices: Recent Progress in Transfer and Cleaning Methods. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2303014. [PMID: 38049925 DOI: 10.1002/adma.202303014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2023] [Revised: 08/30/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional (2D) materials have tremendous potential to revolutionize the field of electronics and photonics. Unlocking such potential, however, is hampered by the presence of contaminants that usually impede the performance of 2D materials in devices. This perspective provides an overview of recent efforts to develop clean 2D materials and devices. It begins by discussing conventional and recently developed wet and dry transfer techniques and their effectiveness in maintaining material "cleanliness". Multi-scale methodologies for assessing the cleanliness of 2D material surfaces and interfaces are then reviewed. Finally, recent advances in passive and active cleaning strategies are presented, including the unique self-cleaning mechanism, thermal annealing, and mechanical treatment that rely on self-cleaning in essence. The crucial role of interface wetting in these methods is emphasized, and it is hoped that this understanding can inspire further extension and innovation of efficient transfer and cleaning of 2D materials for practical applications.
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Affiliation(s)
- Wenlong Dong
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication and CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhaohe Dai
- Department of Mechanics and Engineering Science, State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing, 100871, China
| | - Luqi Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication and CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Zhong Zhang
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, 230027, China
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Huang X, Xiong R, Hao C, Beck P, Sa B, Wiebe J, Wiesendanger R. 2D Lateral Heterojunction Arrays with Tailored Interface Band Bending. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308007. [PMID: 38315969 DOI: 10.1002/adma.202308007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Revised: 12/24/2023] [Indexed: 02/07/2024]
Abstract
Two-dimensional (2D) lateral heterojunction arrays, characterized by well-defined electronic interfaces, hold significant promise for advancing next-generation electronic devices. Despite this potential, the efficient synthesis of high-density lateral heterojunctions with tunable interfacial band alignment remains a challenging. Here, a novel strategy is reported for the fabrication of lateral heterojunction arrays between monolayer Si2Te2 grown on Sb2Te3 (ML-Si2Te2@Sb2Te3) and one-quintuple-layer Sb2Te3 grown on monolayer Si2Te2 (1QL-Sb2Te3@ML-Si2Te2) on a p-doped Sb2Te3 substrate. The site-specific formation of numerous periodically arranged 2D ML-Si2Te2@Sb2Te3/1QL-Sb2Te3@ML-Si2Te2 lateral heterojunctions is realized solely through three epitaxial growth steps of thick-Sb2Te3, ML-Si2Te2, and 1QL-Sb2Te3 films, sequentially. More importantly, the precisely engineering of the interfacial band alignment is realized, by manipulating the substrate's p-doping effect with lateral spatial dependency, on each ML-Si2Te2@Sb2Te3/1QL-Sb2Te3@ML-Si2Te2 junction. Atomically sharp interfaces of the junctions with continuous lattices are observed by scanning tunneling microscopy. Scanning tunneling spectroscopy measurements directly reveal the tailored type-II band bending at the interface. This reported strategy opens avenues for advancing lateral epitaxy technology, facilitating practical applications of 2D in-plane heterojunctions.
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Affiliation(s)
- Xiaochun Huang
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Rui Xiong
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Chunxue Hao
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Philip Beck
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Baisheng Sa
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Jens Wiebe
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
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45
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Zhang S, Huang X, Chen Y, Yin R, Wang H, Xu T, Guo J, Wang X, Lin T, Shen H, Ge J, Meng X, Hu W, Dai N, Wang X, Chu J, Wang J. Black Arsenic Phosphorus Mid-Wave Infrared Barrier Detector with High Detectivity at Room Temperature. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313134. [PMID: 38331419 DOI: 10.1002/adma.202313134] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Revised: 02/01/2024] [Indexed: 02/10/2024]
Abstract
The barrier structure is designed to enhance the operating temperature of the infrared detector, thereby improving the efficiency of collecting photogenerated carriers and reducing dark current generation, without suppressing the photocurrent. However, the development of barrier detectors using conventional materials is limited due to the strict requirements for lattice and band matching. In this study, a high-performance unipolar barrier detector is designed utilizing a black arsenic phosphorus/molybdenum disulfide/black phosphorus van der Waals heterojunction. The device exhibits a broad response bandwidth ranging from visible light to mid-wave infrared (520 nm to 4.6 µm), with a blackbody detectivity of 2.7 × 1010 cmHz-1/2 W-1 in the mid-wave infrared range at room temperature. Moreover, the optical absorption anisotropy of black arsenic phosphorus enables polarization resolution detection, achieving a polarization extinction ratio of 35.5 at 4.6 µm. Mid-wave infrared imaging of the device is successfully demonstrated at room temperature, highlighting the significant potential of barrier devices based on van der Waals heterojunctions in mid-wave infrared detection.
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Affiliation(s)
- Shukui Zhang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Xinning Huang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Yan Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200433, China
| | - Ruotong Yin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Jiaoyang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Xingjun Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Jun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Weida Hu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Ning Dai
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Junhao Chu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200433, China
| | - Jianlu Wang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200433, China
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Nibhanupudi SST, Roy A, Chowdhury S, Schalip R, Coupin MJ, Matthews KC, Alam MH, Satpati B, Movva HCP, Luth CJ, Wu S, Warner JH, Banerjee SK. Low-Temperature Synthesis of WSe 2 by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22326-22333. [PMID: 38635965 DOI: 10.1021/acsami.3c18446] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Low-temperature large-area growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) is critical for their integration with silicon chips. Especially, if the growth temperatures can be lowered below the back-end-of-line (BEOL) processing temperatures, the Si transistors can interface with 2D devices (in the back end) to enable high-density heterogeneous circuits. Such configurations are particularly useful for neuromorphic computing applications where a dense network of neurons interacts to compute the output. In this work, we present low-temperature synthesis (400 °C) of 2D tungsten diselenide (WSe2) via the selenization of the W film under ultrahigh vacuum (UHV) conditions. This simple yet effective process yields large-area, homogeneous films of 2D TMDs, as confirmed by several characterization techniques, including reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy, and different spectroscopy methods. Memristors fabricated using the grown WSe2 film are leveraged to realize a novel compact neuron circuit that can be reconfigured to enable homeostasis.
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Affiliation(s)
- S S Teja Nibhanupudi
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Anupam Roy
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
- Department of Physics, Birla Institute of Technology Mesra, Ranchi, Jharkhand 835215, India
| | - Sayema Chowdhury
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Ryan Schalip
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Matthew J Coupin
- Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Kevin C Matthews
- Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Md Hasibul Alam
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Biswarup Satpati
- Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700 064, India
| | - Hema C P Movva
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Christopher J Luth
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Siyu Wu
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Jamie H Warner
- Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Sanjay K Banerjee
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
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Gao Z, Iqbal A, Hassan T, Hui S, Wu H, Koo CM. Tailoring Built-In Electric Field in a Self-Assembled Zeolitic Imidazolate Framework/MXene Nanocomposites for Microwave Absorption. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311411. [PMID: 38288859 DOI: 10.1002/adma.202311411] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2023] [Revised: 01/19/2024] [Indexed: 02/13/2024]
Abstract
Heterointerface engineering, which plays a pivotal role in developing advanced microwave-absorbing materials, is employed to design zeolitic imidazolate framework (ZIF)-MXene nanocomposites. The ZIF-MXene composites are prepared by electrostatic self-assembly of negatively charged titanium carbide MXene flakes and positively charged Co-containing ZIF nanomaterials. This approach effectively creates abundant Mott-Schottky heterointerfaces exhibiting a robust built-in electric field (BIEF) effect, as evidenced by experimental and theoretical analyses, leading to a notable attenuation of electromagnetic energy. Systematic manipulation of the BIEF-exhibiting heterointerface, achieved through topological modulation of the ZIF, proficiently alters charge separation, facilitates electron migration, and ultimately enhances polarization relaxation loss, resulting in exceptional electromagnetic wave absorption performance (reflection loss RLmin = -47.35 dB and effective absorption bandwidth fE = 6.32 GHz). The present study demonstrates an innovative model system for elucidating the interfacial polarization mechanisms and pioneers a novel approach to developing functional materials with electromagnetic characteristics through spatial charge engineering.
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Affiliation(s)
- Zhenguo Gao
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
- School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Aamir Iqbal
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Tufail Hassan
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Shengchong Hui
- MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 10072, China
| | - Hongjing Wu
- MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 10072, China
| | - Chong Min Koo
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
- School of Chemical Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
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48
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Mishra S, Liu F, Shakthivel D, Rai B, Georgiev V. Molecular dynamics simulation-based study to analyse the properties of entrapped water between gold and graphene 2D interfaces. NANOSCALE ADVANCES 2024; 6:2371-2379. [PMID: 38694470 PMCID: PMC11059550 DOI: 10.1039/d3na00878a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Accepted: 03/17/2024] [Indexed: 05/04/2024]
Abstract
Heterostructures based on graphene and other 2D materials have received significant attention in recent years. However, it is challenging to fabricate them with an ultra-clean interface due to unwanted foreign molecules, which usually get introduced during their transfer to a desired substrate. Clean nanofabrication is critical for the utilization of these materials in 2D nanoelectronics devices and circuits, and therefore, it is important to understand the influence of the "non-ideal" interface. Inspired by the wet-transfer process of the CVD-grown graphene, herein, we present an atomistic simulation of the graphene-Au interface, where water molecules often get trapped during the transfer process. By using molecular dynamics (MD) simulations, we investigated the structural variations of the trapped water and the traction-separation curve derived from the graphene-Au interface at 300 K. We observed the formation of an ice-like structure with square-ice patterns when the thickness of the water film was <5 Å. This could cause undesirable strain in the graphene layer and hence affect the performance of devices developed from it. We also observed that at higher thicknesses the water film is predominantly present in the liquid state. The traction separation curve showed that the adhesion of graphene is better in the presence of an ice-like structure. This study explains the behaviour of water confined at the nanoscale region and advances our understanding of the graphene-Au interface in 2D nanoelectronics devices and circuits.
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Affiliation(s)
- Shashank Mishra
- James Watt School of Engineering, University of Glasgow G12 8QQ Glasgow UK
| | - Fengyuan Liu
- James Watt School of Engineering, University of Glasgow G12 8QQ Glasgow UK
| | | | - Beena Rai
- TCS Research, Tata Consultancy Services Limited Pune 411013 India
| | - Vihar Georgiev
- James Watt School of Engineering, University of Glasgow G12 8QQ Glasgow UK
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49
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Zhu T, Liu K, Zhang Y, Meng S, He M, Zhang Y, Yan M, Dong X, Li X, Jiang M, Xu H. Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe 2/Ta 2NiSe 5 Heterostructure for Multimode Optoelectronic Logic Gate. ACS NANO 2024; 18:11462-11473. [PMID: 38632853 DOI: 10.1021/acsnano.4c02923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/19/2024]
Abstract
Two-dimensional (2D) materials with superior properties exhibit tremendous potential in developing next-generation electronic and optoelectronic devices. Integrating various functions into one device is highly expected as that endows 2D materials great promise for more Moore and more-than-Moore device applications. Here, we construct a WSe2/Ta2NiSe5 heterostructure by stacking the p-type WSe2 and the n-type narrow gap Ta2NiSe5 with the aim to achieve a multifunction optoelectronic device. Owing to the large interface potential barrier, the heterostructure device reveals a prominent diode feature with a large rectify ratio (7.6 × 104) and a low dark current (10-12 A). Especially, gate voltage- and bias voltage-tunable staggered-gap to broken-gap transition is achieved on the heterostructure device, which enables gate voltage-tunable forward and reverse rectifying features. As results, the heterostructure device exhibits superior self-powered photodetection properties, including a high detectivity of 1.08 × 1010 Jones and a fast response time of 91 μs. Additionally, the intrinsic structural anisotropy of Ta2NiSe5 endows the heterostructure device with strong polarization-sensitive photodetection and high-resolution polarization imaging. Based on these characteristics, a multimode optoelectronic logic gate is realized on the heterostructure via synergistically modulating the light on/off, polarization angle, gate voltage, and bias voltage. This work shed light on the future development of constructing high-performance multifunctional optoelectronic devices.
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Affiliation(s)
- Tao Zhu
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Kai Liu
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Yao Zhang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Si Meng
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Mengfei He
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Yingli Zhang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
| | - Minglu Yan
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
| | - Xiaoxiang Dong
- Department of Physics, Xiamen University, Xiamen 361005, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
| | - Man Jiang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
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50
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Kurtz F, Dauwe TN, Yalunin SV, Storeck G, Horstmann JG, Böckmann H, Ropers C. Non-thermal phonon dynamics and a quenched exciton condensate probed by surface-sensitive electron diffraction. NATURE MATERIALS 2024:10.1038/s41563-024-01880-6. [PMID: 38688990 DOI: 10.1038/s41563-024-01880-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2023] [Accepted: 03/26/2024] [Indexed: 05/02/2024]
Abstract
Interactions among and between electrons and phonons steer the energy flow in photo-excited materials and govern the emergence of correlated phases. The strength of electron-phonon interactions, decay channels of strongly coupled modes and the evolution of three-dimensional order are revealed by electron or X-ray pulses tracking non-equilibrium structural dynamics. Despite such capabilities, the growing relevance of inherently anisotropic two-dimensional materials and functional heterostructures still calls for techniques with monolayer sensitivity and, specifically, access to out-of-plane phonon polarizations. Here, we resolve non-equilibrium phonon dynamics and quantify the excitonic contribution to the structural order parameter in 1T-TiSe2. To this end, we introduce ultrafast low-energy electron diffuse scattering and trace strongly momentum- and fluence-dependent phonon populations. Mediated by phonon-phonon scattering, a few-picosecond build-up near the zone boundary precedes a far slower generation of zone-centre acoustic modes. These weakly coupled phonons are shown to substantially delay overall equilibration in layered materials. Moreover, we record the surface structural response to a quench of the material's widely investigated exciton condensate, identifying an approximate 30:70 ratio of excitonic versus Peierls contributions to the total lattice distortion in the charge density wave phase. The surface-sensitive approach complements the ultrafast structural toolbox and may further elucidate the impact of phonon scattering in numerous other phenomena within two-dimensional materials, such as the formation of interlayer excitons in twisted bilayers.
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Affiliation(s)
- Felix Kurtz
- Department of Ultrafast Dynamics, Max Planck Institute for Multidisciplinary Sciences, Göttingen, Germany
- 4th Physical Institute, Solids and Nanostructures, University of Göttingen, Göttingen, Germany
| | - Tim N Dauwe
- Department of Ultrafast Dynamics, Max Planck Institute for Multidisciplinary Sciences, Göttingen, Germany
- 4th Physical Institute, Solids and Nanostructures, University of Göttingen, Göttingen, Germany
| | - Sergey V Yalunin
- Department of Ultrafast Dynamics, Max Planck Institute for Multidisciplinary Sciences, Göttingen, Germany
- 4th Physical Institute, Solids and Nanostructures, University of Göttingen, Göttingen, Germany
| | - Gero Storeck
- Department of Ultrafast Dynamics, Max Planck Institute for Multidisciplinary Sciences, Göttingen, Germany
- 4th Physical Institute, Solids and Nanostructures, University of Göttingen, Göttingen, Germany
| | - Jan Gerrit Horstmann
- Department of Ultrafast Dynamics, Max Planck Institute for Multidisciplinary Sciences, Göttingen, Germany
- Department of Materials, ETH Zurich, Zurich, Switzerland
| | - Hannes Böckmann
- Department of Ultrafast Dynamics, Max Planck Institute for Multidisciplinary Sciences, Göttingen, Germany
- 4th Physical Institute, Solids and Nanostructures, University of Göttingen, Göttingen, Germany
| | - Claus Ropers
- Department of Ultrafast Dynamics, Max Planck Institute for Multidisciplinary Sciences, Göttingen, Germany.
- 4th Physical Institute, Solids and Nanostructures, University of Göttingen, Göttingen, Germany.
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