1
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Chen L, Wu AX, Tulu N, Wang J, Juanson A, Watanabe K, Taniguchi T, Pettes MT, Campbell MA, Xu M, Gadre CA, Zhou Y, Chen H, Cao P, Jauregui LA, Wu R, Pan X, Sanchez-Yamagishi JD. Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials. Nat Mater 2024:10.1038/s41563-024-01894-0. [PMID: 38740956 DOI: 10.1038/s41563-024-01894-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Accepted: 04/09/2024] [Indexed: 05/16/2024]
Abstract
Confining materials to two-dimensional forms changes the behaviour of the electrons and enables the creation of new devices. However, most materials are challenging to produce as uniform, thin crystals. Here we present a synthesis approach where thin crystals are grown in a nanoscale mould defined by atomically flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mould made of hexagonal boron nitride, we grow ultraflat bismuth crystals less than 10 nm thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies. The vdW-moulded bismuth shows exceptional electronic transport, enabling the observation of Shubnikov-de Haas quantum oscillations originating from the (111) surface state Landau levels. By measuring the gate-dependent magnetoresistance, we observe multi-carrier quantum oscillations and Landau level splitting, with features originating from both the top and bottom surfaces. Our vdW mould growth technique establishes a platform for electronic studies and control of bismuth's Rashba surface states and topological boundary modes1-3. Beyond bismuth, the vdW-moulding approach provides a low-cost way to synthesize ultrathin crystals and directly integrate them into a vdW heterostructure.
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Affiliation(s)
- Laisi Chen
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Amy X Wu
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Naol Tulu
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Joshua Wang
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Adrian Juanson
- Department of Physics and Astronomy, California State University Long Beach, Long Beach, CA, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Michael T Pettes
- Center for Integrated Nanotechnologies (CINT), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Marshall A Campbell
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
- Center for Integrated Nanotechnologies (CINT), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Mingjie Xu
- Irvine Materials Research Institute, University of California Irvine, Irvine, CA, USA
| | - Chaitanya A Gadre
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Yinong Zhou
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Hangman Chen
- Department of Mechanical and Aerospace Engineering, University of California Irvine, Irvine, CA, USA
| | - Penghui Cao
- Department of Mechanical and Aerospace Engineering, University of California Irvine, Irvine, CA, USA
| | - Luis A Jauregui
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Xiaoqing Pan
- Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
- Irvine Materials Research Institute, University of California Irvine, Irvine, CA, USA
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, USA
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2
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Wu K, Wang H, Yang M, Liu L, Sun Z, Hu G, Song Y, Han X, Guo J, Wu K, Feng B, Shen C, Huang Y, Shi Y, Cheng Z, Yang H, Bao L, Pantelides ST, Gao HJ. Gold-Template-Assisted Mechanical Exfoliation of Large-Area 2D Layers Enables Efficient and Precise Construction of Moiré Superlattices. Adv Mater 2024:e2313511. [PMID: 38597395 DOI: 10.1002/adma.202313511] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Revised: 04/07/2024] [Indexed: 04/11/2024]
Abstract
Moiré superlattices, consisting of rotationally aligned 2D atomically thin layers, provide a highly novel platform for the study of correlated quantum phenomena. However, reliable and efficient construction of moiré superlattices is challenging because of difficulties to accurately angle-align small exfoliated 2D layers and the need to shun wet-transfer processes. Here, efficient and precise construction of various moiré superlattices is demonstrated by picking up and stacking large-area 2D mono- or few-layer crystals with predetermined crystal axes, made possible by a gold-template-assisted mechanical exfoliation method. The exfoliated 2D layers are semiconductors, superconductors, or magnets and their high quality is confirmed by photoluminescence and Raman spectra and by electrical transport measurements of fabricated field-effect transistors and Hall devices. Twisted homobilayers with angle-twisting accuracy of ≈0.3°, twisted heterobilayers with sub-degree angle-alignment accuracy, and multilayer superlattices are precisely constructed and characterized by their moiré patterns, interlayer excitons, and second harmonic generation. The present study paves the way for exploring emergent phenomena in moiré superlattices.
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Affiliation(s)
- Kang Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Hao Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Meng Yang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Li Liu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Zhenyu Sun
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Guojing Hu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanpeng Song
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xin Han
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, P. R. China
| | - Jiangang Guo
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Baojie Feng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chengmin Shen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Youguo Shi
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Zhigang Cheng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Haitao Yang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Hefei National Laboratory, Hefei, Anhui, 230088, P. R. China
| | - Lihong Bao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Hefei National Laboratory, Hefei, Anhui, 230088, P. R. China
| | - Sokrates T Pantelides
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Department of Physics and Astronomy & Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, 37235, USA
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Hefei National Laboratory, Hefei, Anhui, 230088, P. R. China
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3
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Hwang J, Ruan W, Chen Y, Tang S, Crommie MF, Shen ZX, Mo SK. Charge density waves in two-dimensional transition metal dichalcogenides. Rep Prog Phys 2024; 87:044502. [PMID: 38518359 DOI: 10.1088/1361-6633/ad36d3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Accepted: 03/22/2024] [Indexed: 03/24/2024]
Abstract
Charge density wave (CDW is one of the most ubiquitous electronic orders in quantum materials. While the essential ingredients of CDW order have been extensively studied, a comprehensive microscopic understanding is yet to be reached. Recent research efforts on the CDW phenomena in two-dimensional (2D) materials provide a new pathway toward a deeper understanding of its complexity. This review provides an overview of the CDW orders in 2D with atomically thin transition metal dichalcogenides (TMDCs) as the materials platform. We mainly focus on the electronic structure investigations on the epitaxially grown TMDC samples with angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy as complementary experimental tools. We discuss the possible origins of the 2D CDW, novel quantum states coexisting with them, and exotic types of charge orders that can only be realized in the 2D limit.
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Affiliation(s)
- Jinwoong Hwang
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon 24341, Republic of Korea
| | - Wei Ruan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, People's Republic of China
| | - Yi Chen
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, People's Republic of China
| | - Shujie Tang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Michael F Crommie
- Department of Physics, University of California, Berkeley, CA, United States of America
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America
- Kavli Energy NanoSciences Institute at the University of California at Berkeley, Berkeley, CA 94720, United States of America
| | - Zhi-Xun Shen
- Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, CA, United States of America
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, United States of America
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 United States of America
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4
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Chen J, Liu L, Chen H, Xu N, Deng S. Controlled Preparation of High Quality Bubble-Free and Uniform Conducting Interfaces of Vertical van der Waals Heterostructures of Arrays. ACS Appl Mater Interfaces 2024; 16:10877-10885. [PMID: 38360529 DOI: 10.1021/acsami.3c16128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/17/2024]
Abstract
Sharp and clean interfaces of van der Waals (vdW) heterostructures are highly demanded in two-dimensional (2D) materials-based devices. However, current assembly methods usually cause interfacial bubbles and wrinkles, hindering carrier interlayer transport. The preparation of a large-scale vdW heterostructure with a bubble-free interface is still a challenge. Although many efforts have been made to eliminate bubbles, the evolution processes of the interfacial bubbles are rarely studied. Here, the interface bubble formation and evolution of the transferred 2D materials and their vdW heterostructure are systemically studied by the atomic force microscopy (AFM) technique and high-resolution surface current mapping. A thermal annealing procedure is developed to reduce the number of bubbles and to improve the quality of interfaces. In addition, influences of the interface residues and nanosteps on bubble evolution are also discussed. Further, we develop the polystyrene (PS)-mediated polydimethylsiloxane (PDMS) transfer technique to realize the high-quality transfer of heterostructure arrays. Finally, high-resolution surface current mapping results confirm that we can now produce highly uniform electrical conduction interfaces of heterojunctions. This study provides guidance for assembling high quality interfaces and paves the way for production of bubble-free heterostructure-based electronic devices with high performance and good uniformity.
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Affiliation(s)
- Jianwei Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Liwei Liu
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Ningsheng Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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5
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Shein K, Zharkova E, Kashchenko M, Kolbatova A, Lyubchak A, Elesin L, Nguyen E, Semenov A, Charaev I, Schilling A, Goltsman G, Novoselov KS, Gayduchenko I, Bandurin DA. Fundamental Limits of Few-Layer NbSe 2 Microbolometers at Terahertz Frequencies. Nano Lett 2024; 24:2282-2288. [PMID: 38345381 DOI: 10.1021/acs.nanolett.3c04493] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
The rapid development of infrared spectroscopy, observational astronomy, and scanning near-field microscopy has been enabled by the emergence of sensitive mid- and far-infrared photodetectors. Superconducting hot-electron bolometers (HEBs), known for their exceptional signal-to-noise ratio and fast photoresponse, play a crucial role in these applications. While superconducting HEBs are traditionally crafted from sputtered thin films such as NbN, the potential of layered van der Waals (vdW) superconductors is untapped at THz frequencies. Here, we introduce superconducting HEBs made from few-layer NbSe2 microwires. By improving the interface between NbSe2 and metal leads, we overcome impedance mismatch with RF readout, enabling large responsivity THz detection (0.13 to 2.5 THz) with a minimal noise equivalent power of 7 pW/ H z and nanosecond-range response time. Our work highlights NbSe2 as a promising platform for HEB technology and presents a reliable vdW assembly protocol for custom bolometer production.
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Affiliation(s)
- Kirill Shein
- Moscow Pedagogical State University, Moscow, Russia 119991
- National Research University Higher School of Economics, Moscow, Russia 101000
| | - Ekaterina Zharkova
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia 127495
| | - Mikhail Kashchenko
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia 127495
| | - Anna Kolbatova
- Moscow Pedagogical State University, Moscow, Russia 119991
| | - Anastasia Lyubchak
- Moscow Pedagogical State University, Moscow, Russia 119991
- National Research University Higher School of Economics, Moscow, Russia 101000
| | - Leonid Elesin
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia 127495
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575
| | - Ekaterina Nguyen
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia 127495
| | | | | | | | - Gregory Goltsman
- Moscow Pedagogical State University, Moscow, Russia 119991
- National Research University Higher School of Economics, Moscow, Russia 101000
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575
| | - Igor Gayduchenko
- Moscow Pedagogical State University, Moscow, Russia 119991
- National Research University Higher School of Economics, Moscow, Russia 101000
| | - Denis A Bandurin
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575
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6
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Duleba A, Pugachev M, Blumenau M, Martanov S, Naumov M, Shupletsov A, Kuntsevich A. Inert-Atmosphere Microfabrication Technology for 2D Materials and Heterostructures. Micromachines (Basel) 2023; 15:94. [PMID: 38258213 DOI: 10.3390/mi15010094] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 12/28/2023] [Accepted: 12/29/2023] [Indexed: 01/24/2024]
Abstract
Most 2D materials are unstable under ambient conditions. Assembly of van der Waals heterostructures in the inert atmosphere of the glove box with ex situ lithography partially solves the problem of device fabrication out of unstable materials. In our paper, we demonstrate an approach to the next-generation inert-atmosphere (nitrogen, <20 ppm oxygen content) fabrication setup, including optical contact mask lithography with a 2 μm resolution, metal evaporation, lift-off and placement of the sample to the cryostat for electric measurements in the same inert atmosphere environment. We consider basic construction principles, budget considerations, and showcase the fabrication and subsequent degradation of black-phosphorous-based structures within weeks. The proposed solutions are surprisingly compact and inexpensive, making them feasible for implementation in numerous 2D materials laboratories.
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Affiliation(s)
- Aliaksandr Duleba
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia
| | - Mikhail Pugachev
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia
| | - Mark Blumenau
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia
| | - Sergey Martanov
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia
| | - Mark Naumov
- Dukhov Research Institute of Automatics (VNIIA), Moscow 127055, Russia
| | - Aleksey Shupletsov
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia
| | - Aleksandr Kuntsevich
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia
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7
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Zhang Z, Dong X, Chen J, Liu Z, Gao Z, Chang X, Du Y, Jia C, Fu H, Luo F, Wu J. Transferred Polymer-Encapsulated Metal Electrodes for Electrical Transport Measurements on Ultrathin Air-Sensitive Crystals. Small Methods 2023; 7:e2300177. [PMID: 37287373 DOI: 10.1002/smtd.202300177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Revised: 05/29/2023] [Indexed: 06/09/2023]
Abstract
Owing to rapid property degradation after ambient exposure and incompatibility with conventional device fabrication process, electrical transport measurements on air-sensitive 2D materials have always been a big issue. Here, for the first time, a facile one-step polymer-encapsulated electrode transfer (PEET) method applicable for fragile 2D materials is developed, which showed great advantages of damage-free electrodes patterning and in situ polymer encapsulation preventing from H2 O/O2 exposure during the whole electrical measurements process. The ultrathin SmTe2 metals grown by chemical vapor deposition (CVD) are chosen as the prototypical air-sensitive 2D crystals for their poor air-stability, which will become highly insulating when fabricated by conventional lithographic techniques. Nevertheless, the intrinsic electrical properties of CVD-grown SmTe2 nanosheets can be readily investigated by the PEET method instead, showing ultralow contact resistance and high signal/noise ratio. The PEET method can be applicable to other fragile ultrathin magnetic materials, such as (Mn,Cr)Te, to investigate their intrinsic electrical/magnetic properties.
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Affiliation(s)
- Zheshan Zhang
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Xinyue Dong
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Jiabiao Chen
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Zhaochao Liu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Zhansheng Gao
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Xinyue Chang
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Yaping Du
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Chuancheng Jia
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Huixia Fu
- Center of Quantum Materials and Devices & College of Physics, Chongqing University, Chongqing, 401331, China
| | - Feng Luo
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Jinxiong Wu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
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8
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Lei Y, Ma J, Luo J, Huang S, Yu B, Song C, Xing Q, Wang F, Xie Y, Zhang J, Mu L, Ma Y, Wang C, Yan H. Layer-dependent exciton polarizability and the brightening of dark excitons in few-layer black phosphorus. Nat Commun 2023; 14:5314. [PMID: 37658093 PMCID: PMC10474117 DOI: 10.1038/s41467-023-41126-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Accepted: 08/24/2023] [Indexed: 09/03/2023] Open
Abstract
The evolution of excitons from 2D to 3D is of great importance in photo-physics, yet the layer-dependent exciton polarizability hasn't been investigated in 2D semiconductors. Here, we determine the exciton polarizabilities for 3- to 11-layer black phosphorus-a direct bandgap semiconductor regardless of the thickness-through frequency-resolved photocurrent measurements on dual-gate devices and unveil the carrier screening effect in relatively thicker samples. By taking advantage of the broadband photocurrent spectra, we are also able to reveal the exciton response for higher-index subbands under the gate electrical field. Surprisingly, dark excitons are brightened with intensity even stronger than the allowed transitions above certain electrical field. Our study not only sheds light on the exciton evolution with sample thickness, but also paves a way for optoelectronic applications of few-layer BP in modulators, tunable photodetectors, emitters and lasers.
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Affiliation(s)
- Yuchen Lei
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Junwei Ma
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Jiaming Luo
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Shenyang Huang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Boyang Yu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Chaoyu Song
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Qiaoxia Xing
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Fanjie Wang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Yuangang Xie
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Jiasheng Zhang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Lei Mu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Yixuan Ma
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Chong Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Hugen Yan
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China.
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9
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Margot F, Lisi S, Cucchi I, Cappelli E, Hunter A, Gutiérrez-Lezama I, Ma K, von Rohr F, Berthod C, Petocchi F, Poncé S, Marzari N, Gibertini M, Tamai A, Morpurgo AF, Baumberger F. Electronic Structure of Few-Layer Black Phosphorus from μ-ARPES. Nano Lett 2023; 23:6433-6439. [PMID: 37460109 PMCID: PMC10375583 DOI: 10.1021/acs.nanolett.3c01226] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based microfocus angle resolved photoemission (μ-ARPES) system to establish the electronic structure of 2-9 layer BP from experiment. Our measurements unveil ladders of anisotropic, quantized subbands at energies that deviate from the scaling observed in conventional semiconductor quantum wells. We quantify the anisotropy of the effective masses and determine universal tight-binding parameters, which provide an accurate description of the electronic structure for all thicknesses.
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Affiliation(s)
- Florian Margot
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Simone Lisi
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Irène Cucchi
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Edoardo Cappelli
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Andrew Hunter
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Group of Applied Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - KeYuan Ma
- Department of Chemistry, University of Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
| | - Fabian von Rohr
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Christophe Berthod
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Francesco Petocchi
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Samuel Poncé
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, BE-1348 Louvain-la-Neuve, Belgium
| | - Nicola Marzari
- Laboratory of Theory and Simulation of Materials, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Marco Gibertini
- Dipartimento di Scienze Fisiche, Informatiche e Matematiche, University of Modena and Reggio Emilia, 41125 Modena, Italy
| | - Anna Tamai
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Group of Applied Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Felix Baumberger
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen, Switzerland
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10
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. Nat Nanotechnol 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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11
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Tilmann R, Bartlam C, Hartwig O, Tywoniuk B, Dominik N, Cullen CP, Peters L, Stimpel-Lindner T, McEvoy N, Duesberg GS. Identification of Ubiquitously Present Polymeric Adlayers on 2D Transition Metal Dichalcogenides. ACS Nano 2023. [PMID: 37220885 DOI: 10.1021/acsnano.3c01649] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
The interest in 2D materials continues to grow across numerous scientific disciplines as compounds with unique electrical, optical, chemical, and thermal characteristics are being discovered. All these properties are governed by an all-surface nature and nanoscale confinement, which can easily be altered by extrinsic influences, such as defects, dopants or strain, adsorbed molecules, and contaminants. Here, we report on the ubiquitous presence of polymeric adlayers on top of layered transition metal dichalcogenides (TMDs). The atomically thin layers, not evident from common analytic methods, such as Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), or scanning electron microscopy (SEM), could be identified with highly resolved time-of-flight secondary ion mass spectrometry (TOF-SIMS). The layers consist of hydrocarbons, which preferentially adsorb to the hydrophobic van der Waals surfaces of TMDs, derived from the most common methods. Fingerprint fragmentation patterns enable us to identify certain polymers and link them to those used during preparation and storage of the TMDs. The ubiquitous presence of polymeric films on 2D materials has wide reaching implications for their investigation, processing, and applications. In this regard, we reveal the nature of polymeric residues after commonly used transfer procedures on MoS2 films and investigate several annealing procedures for their removal.
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Affiliation(s)
- Rita Tilmann
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich & Center for Integrated Sensor Systems (SENS), Neubiberg 85577, Germany
| | - Cian Bartlam
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich & Center for Integrated Sensor Systems (SENS), Neubiberg 85577, Germany
| | - Oliver Hartwig
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich & Center for Integrated Sensor Systems (SENS), Neubiberg 85577, Germany
| | - Bartlomiej Tywoniuk
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich & Center for Integrated Sensor Systems (SENS), Neubiberg 85577, Germany
| | - Nikolas Dominik
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich & Center for Integrated Sensor Systems (SENS), Neubiberg 85577, Germany
| | - Conor P Cullen
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Lisanne Peters
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Tanja Stimpel-Lindner
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich & Center for Integrated Sensor Systems (SENS), Neubiberg 85577, Germany
| | - Niall McEvoy
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Georg S Duesberg
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich & Center for Integrated Sensor Systems (SENS), Neubiberg 85577, Germany
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12
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Song X, Singha R, Cheng G, Yeh YW, Kamm F, Khoury JF, Hoff BL, Stiles JW, Pielnhofer F, Batson PE, Yao N, Schoop LM. Synthesis of an aqueous, air-stable, superconducting 1T'-WS 2 monolayer ink. Sci Adv 2023; 9:eadd6167. [PMID: 36947621 PMCID: PMC10032609 DOI: 10.1126/sciadv.add6167] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Accepted: 02/22/2023] [Indexed: 06/18/2023]
Abstract
Liquid-phase chemical exfoliation can achieve industry-scale production of two-dimensional (2D) materials for a wide range of applications. However, many 2D materials with potential applications in quantum technologies often fail to leave the laboratory setting because of their air sensitivity and depreciation of physical performance after chemical processing. We report a simple chemical exfoliation method to create a stable, aqueous, surfactant-free, superconducting ink containing phase-pure 1T'-WS2 monolayers that are isostructural to the air-sensitive topological insulator 1T'-WTe2. The printed film is metallic at room temperature and superconducting below 7.3 kelvin, shows strong anisotropic unconventional superconducting behavior with an in-plane and out-of-plane upper critical magnetic field of 30.1 and 5.3 tesla, and is stable at ambient conditions for at least 30 days. Our results show that chemical processing can make nontrivial 2D materials that were formerly only studied in laboratories commercially accessible.
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Affiliation(s)
- Xiaoyu Song
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
| | - Ratnadwip Singha
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
| | - Guangming Cheng
- Princeton Institute for Science and Technology of Materials, Princeton, NJ 08544, USA
| | - Yao-Wen Yeh
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
| | - Franziska Kamm
- Institute of Inorganic Chemistry, University of Regensburg, D-93040 Regensburg, Germany
| | - Jason F. Khoury
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
| | - Brianna L. Hoff
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
| | - Joseph W. Stiles
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
| | - Florian Pielnhofer
- Institute of Inorganic Chemistry, University of Regensburg, D-93040 Regensburg, Germany
| | - Philip E. Batson
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
| | - Nan Yao
- Princeton Institute for Science and Technology of Materials, Princeton, NJ 08544, USA
| | - Leslie M. Schoop
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
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13
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Jiang S, Lebedev D, Andrews L, Gish JT, Song TW, Hersam MC, Balogun O. Quantitative Characterization of the Anisotropic Thermal Properties of Encapsulated Two-Dimensional MoS 2 Nanofilms. ACS Appl Mater Interfaces 2023; 15:10123-10132. [PMID: 36753465 DOI: 10.1021/acsami.2c18755] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) semiconductors exhibit unique physical properties at the limit of a few atomic layers that are desirable for optoelectronic, spintronic, and electronic applications. Some of these materials require ambient encapsulation to preserve their properties from environmental degradation. While encapsulating 2D semiconductors is essential to device functionality, they also impact heat management due to the reduced thermal conductivity of the 2D material. There are limited experimental reports on in-plane thermal conductivity measurements in encapsulated 2D semiconductors. These measurements are particularly challenging in ultrathin films with a lower thermal conductivity than graphene since it may be difficult to separate the thermal effects of the sample from the encapsulating layers. To address this challenge, we integrated the frequency domain thermoreflectance (FDTR) and optothermal Raman spectroscopy (OTRS) techniques in the same experimental platform. First, we use the FDTR technique to characterize the cross-plane thermal conductivity and thermal boundary conductance. Next, we measure the in-plane thermal conductivity by model-based analysis of the OTRS measurements, using the cross-plane properties obtained from the FDTR measurements as input parameters. We provide experimental data for the first time on the thickness-dependent in-plane thermal conductivity of ultrathin MoS2 nanofilms encapsulated by alumina (Al2O3) and silica (SiO2) thin films. The measured thermal conductivity increased from 26.0 ± 10.0 W m-1 K-1 for monolayer MoS2 to 39.8 ± 10.8 W m-1 K-1 for the six-layer films. We also show that the thickness-dependent cross-plane thermal boundary conductance of the Al2O3/MoS2/SiO2 interface is limited by the low thermal conductance (18.5 MW m-2 K-1) of the MoS2/SiO2 interface, which has important implications on heat management in SiO2-supported and encased MoS2 devices. The measurement methods can be generalized to other 2D materials to study their anisotropic thermal properties.
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Affiliation(s)
- Shizhou Jiang
- Department of Mechanical Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Loren Andrews
- Department of Chemistry, Bates College, Lewiston, Maine 04240, United States
| | - J Tyler Gish
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Thomas W Song
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Oluwaseyi Balogun
- Department of Mechanical Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Civil and Environmental Engineering, Northwestern University, Evanston, Illinois 60208, United States
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14
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Er-Rahmany S, Loulidi M, El Kenz A, Benyoussef A, Balli M, Azzouz M. Prediction of superconductivity in Li, K, Ca, and Sr-intercalated blue phosphorene bilayer using first-principle calculations. J Phys Condens Matter 2023; 35:135601. [PMID: 36693282 DOI: 10.1088/1361-648x/acb5d9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Accepted: 01/24/2023] [Indexed: 06/17/2023]
Abstract
Blue phosphorene is an interesting two-dimensional (2D) material, which has attracted the attention of researchers, due to its affluent physical and chemical properties. In recent years, it was discovered that the intercalation of alkali metals and alkaline earth metals in 2D materials may lead to conventional Bardeen-Cooper-Schrieffer (BCS) superconductivity. In this work, the electronic structure, phonon dispersion, Eliashberg spectral function, electron-phonon coupling (EPC), and the critical temperature of blue phosphorene bilayer intercalated by alkali metals (Li, and K) and alkaline earth metals (Ca, and Sr) for both AB and AC stacking orders are studied using the density functional theory and the density functional perturbation theory, within the generalized gradient approximation with van der Waals correction. The present work shows that the blue phosphorene bilayer is dynamically stable in AB stacking for Li and AC stacking for K, Ca, and Sr, and after intercalation, it transforms from a semiconductor to a metal owing to charge transfer between intercalated atoms and phosphorene. Furthermore, the EPC constant and the critical temperature are higher than those of 2D BCS-type superconductors. They are about 3 and 24.61 K respectively for K-intercalated blue phosphorene bilayer. Thus, our results suggest that blue phosphorene is a good candidate for a superconductor.
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Affiliation(s)
- S Er-Rahmany
- Laboratory of Condensed Matter and Interdisciplinary Sciences, Unite de Recherche Labelliseìe CNRST, URL-CNRST-17, Faculty of Sciences, Mohammed V University of Rabat, Rabat, Morocco
- AMEEC Team, LERMA, College of Engineering and Architecture, International University of Rabat, Parc Technopolis, Rocade de Rabat-Salé, Sala El jadida11100, Morocco
| | - M Loulidi
- Laboratory of Condensed Matter and Interdisciplinary Sciences, Unite de Recherche Labelliseìe CNRST, URL-CNRST-17, Faculty of Sciences, Mohammed V University of Rabat, Rabat, Morocco
| | - A El Kenz
- Laboratory of Condensed Matter and Interdisciplinary Sciences, Unite de Recherche Labelliseìe CNRST, URL-CNRST-17, Faculty of Sciences, Mohammed V University of Rabat, Rabat, Morocco
| | - A Benyoussef
- Laboratory of Condensed Matter and Interdisciplinary Sciences, Unite de Recherche Labelliseìe CNRST, URL-CNRST-17, Faculty of Sciences, Mohammed V University of Rabat, Rabat, Morocco
- Hassan II Academy of Sciences and Techniques, Rabat, Morocco
| | - M Balli
- AMEEC Team, LERMA, College of Engineering and Architecture, International University of Rabat, Parc Technopolis, Rocade de Rabat-Salé, Sala El jadida11100, Morocco
| | - M Azzouz
- Al Akhawayn University, School of Science and Engineering, PO Box 104, Hassan II Avenue, 53000 Ifrane, Morocco
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15
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Guo S, Luo M, Shi G, Tian N, Huang Z, Yang F, Ma L, Wang NZ, Shi Q, Xu K, Xu Z, Watanabe K, Taniguchi T, Chen XH, Shen D, Zhang L, Ruan W, Zhang Y. An ultra-high vacuum system for fabricating clean two-dimensional material devices. Rev Sci Instrum 2023; 94:013903. [PMID: 36725600 DOI: 10.1063/5.0110875] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2022] [Accepted: 12/21/2022] [Indexed: 06/18/2023]
Abstract
High mobility electron gases confined at material interfaces have been a venue for major discoveries in condensed matter physics. Ultra-high vacuum (UHV) technologies played a key role in creating such high-quality interfaces. The advent of two-dimensional (2D) materials brought new opportunities to explore exotic physics in flat lands. UHV technologies may once again revolutionize research in low dimensions by facilitating the construction of ultra-clean interfaces with a wide variety of 2D materials. Here, we describe the design and operation of a UHV 2D material device fabrication system, in which the entire fabrication process is performed under pressure lower than 5 × 10-10 mbar. Specifically, the UHV system enables the exfoliation of atomically clean 2D materials. Subsequent in situ assembly of van der Waals heterostructures produces high-quality interfaces that are free of contamination. We demonstrate functionalities of this system through exemplary fabrication of various 2D materials and their heterostructures.
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Affiliation(s)
- Shuaifei Guo
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
| | - Mingyan Luo
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
| | - Gang Shi
- Department of Physics, Southern University of Science and Technology, 518055 Shenzhen, China
| | - Ning Tian
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
| | - Zhe Huang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Fangyuan Yang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
| | - Liguo Ma
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
| | - Nai Zhou Wang
- Hefei National Laboratory for Physical Science at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qinzhen Shi
- Center for Biomedical Engineering, Fudan University, Shanghai 200438, China
| | - Kailiang Xu
- Center for Biomedical Engineering, Fudan University, Shanghai 200438, China
| | - Zihan Xu
- SixCarbon Technology, Youmagang Industry Park, Shenzhen 518106, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Xian Hui Chen
- Hefei National Laboratory for Physical Science at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Dawei Shen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Liyuan Zhang
- Department of Physics, Southern University of Science and Technology, 518055 Shenzhen, China
| | - Wei Ruan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
| | - Yuanbo Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
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16
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Lin D, Ranjbar A, Li X, Huang X, Huang Y, Berger H, Forró L, Watanabe K, Taniguchi T, Belosludov RV, Kühne TD, Ding H, Bahramy MS, Xi X. Axial-Bonding-Driven Dimensionality Effect on the Charge-Density Wave in NbSe 2. Nano Lett 2022; 22:9389-9395. [PMID: 36416790 DOI: 10.1021/acs.nanolett.2c03280] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
2H-NbSe2 is a prototypical charge-density-wave (CDW) system, exhibiting such a symmetry-breaking quantum ground state in its bulk and down to a single-atomic-layer limit. However, how this state depends on dimensionality and what governs the dimensionality effect remain controversial. Here, we experimentally demonstrate a robust 3 × 3 CDW phase in both freestanding and substrate-supported bilayer NbSe2, far above the bulk transition temperature. We exclude environmental effects and reveal a strong temperature and thickness dependence of Raman intensity from an axially vibrating A1g phonon mode, involving Se ions. Using first-principles calculations, we show that these result from a delicate but profound competition between the intra- and interlayer bonding formed between Se-pz orbitals. Our results suggest the crucial role of Se out-of-plane displacement in driving the CDW distortion, revealing the Se-dominated dimensionality effect and establishing a new perspective on the chemical bonding and mechanical stability in layered CDW materials.
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Affiliation(s)
- Dongjing Lin
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing210093, People's Republic of China
| | - Ahmad Ranjbar
- Dynamics of Condensed Matter and Center for Sustainable Systems Design, Theoretical Chemistry, University of Paderborn, Paderborn33098, Germany
| | - Xiaoxia Li
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing210093, People's Republic of China
| | - Xinyu Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing100081, People's Republic of China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing100081, People's Republic of China
| | - Helmuth Berger
- Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, 1015Lausanne, Switzerland
| | - László Forró
- Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, 1015Lausanne, Switzerland
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | | | - Thomas D Kühne
- Dynamics of Condensed Matter and Center for Sustainable Systems Design, Theoretical Chemistry, University of Paderborn, Paderborn33098, Germany
| | - Haifeng Ding
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing210093, People's Republic of China
| | - Mohammad Saeed Bahramy
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, ManchesterM13 9PL, United Kingdom
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing210093, People's Republic of China
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17
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Wan W, Dreher P, Muñoz-Segovia D, Harsh R, Guo H, Martínez-Galera AJ, Guinea F, de Juan F, Ugeda MM. Observation of Superconducting Collective Modes from Competing Pairing Instabilities in Single-Layer NbSe 2. Adv Mater 2022; 34:e2206078. [PMID: 36017649 DOI: 10.1002/adma.202206078] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 08/18/2022] [Indexed: 06/15/2023]
Abstract
In certain unconventional superconductors with sizable electronic correlations, the availability of closely competing pairing channels leads to characteristic soft collective fluctuations of the order parameters, which leave fingerprints in many observables and allow the phase competition to be scrutinized. Superconducting layered materials, where electron-electron interactions are enhanced with decreasing thickness, are promising candidates to display these correlation effects. In this work, the existence of a soft collective mode in single-layer NbSe2 , observed as a characteristic resonance excitation in high-resolution tunneling spectra is reported. This resonance is observed along with higher harmonics, its frequency Ω/2Δ is anticorrelated with the local superconducting gap Δ, and its amplitude gradually vanishes by increasing the temperature and upon applying a magnetic field up to the critical values (TC and HC2 ), which sets an unambiguous link to the superconducting state. Aided by a microscopic model that captures the main experimental observations, this resonance is interpreted as a collective Leggett mode that represents the fluctuation toward a proximate f-wave triplet state, due to subleading attraction in the triplet channel. These findings demonstrate the fundamental role of correlations in superconducting 2D transition metal dichalcogenides, opening a path toward unconventional superconductivity in simple, scalable, and transferable 2D superconductors.
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Affiliation(s)
- Wen Wan
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
| | - Paul Dreher
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
| | - Daniel Muñoz-Segovia
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
| | - Rishav Harsh
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
| | - Haojie Guo
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid, E-28049, Spain
| | - Antonio J Martínez-Galera
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid, E-28049, Spain
- Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, Madrid, E-28049, Spain
| | - Francisco Guinea
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), C/Faraday 9, Madrid, E-28049, Spain
| | - Fernando de Juan
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
- Ikerbasque, Basque Foundation for Science, Bilbao, 48013, Spain
| | - Miguel M Ugeda
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
- Ikerbasque, Basque Foundation for Science, Bilbao, 48013, Spain
- (CSIC-UPV-EHU), Paseo Manuel de Lardizábal 5, San Sebastián, 20018, Spain
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18
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Li H, Xiong X, Hui F, Yang D, Jiang J, Feng W, Han J, Duan J, Wang Z, Sun L. Constructing van der Waals heterostructures by dry-transfer assembly for novel optoelectronic device. Nanotechnology 2022; 33:465601. [PMID: 35313295 DOI: 10.1088/1361-6528/ac5f96] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2021] [Accepted: 03/21/2022] [Indexed: 06/14/2023]
Abstract
Since the first successful exfoliation of graphene, the superior physical and chemical properties of two-dimensional (2D) materials, such as atomic thickness, strong in-plane bonding energy and weak inter-layer van der Waals (vdW) force have attracted wide attention. Meanwhile, there is a surge of interest in novel physics which is absent in bulk materials. Thus, vertical stacking of 2D materials could be critical to discover such physics and develop novel optoelectronic applications. Although vdW heterostructures have been grown by chemical vapor deposition, the available choices of materials for stacking is limited and the device yield is yet to be improved. Another approach to build vdW heterostructure relies on wet/dry transfer techniques like stacking Lego bricks. Although previous reviews have surveyed various wet transfer techniques, novel dry transfer techniques have been recently been demonstrated, featuring clean and sharp interfaces, which also gets rid of contamination, wrinkles, bubbles formed during wet transfer. This review summarizes the optimized dry transfer methods, which paves the way towards high-quality 2D material heterostructures with optimized interfaces. Such transfer techniques also lead to new physical phenomena while enable novel optoelectronic applications on artificial vdW heterostructures, which are discussed in the last part of this review.
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Affiliation(s)
- Huihan Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Xiaolu Xiong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Fei Hui
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Dongliang Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Jinbao Jiang
- School of Microelectronic Science and Technology, Sun Yat-Sen University, Zhuhai, 519082, People's Republic of China
| | - Wanxiang Feng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junxi Duan
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, People's Republic of China
| | - Linfeng Sun
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
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19
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Bartus Pravda C, Hegedűs T, Oliveira EF, Berkesi D, Szamosvölgyi Á, Kónya Z, Vajtai R, Kukovecz Á. Hexagonal Boron Nitride Nanosheets Protect Exfoliated Black Phosphorus Layers from Ambient Oxidation. Adv Materials Inter 2022. [DOI: 10.1002/admi.202200857] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Cora Bartus Pravda
- Interdisciplinary Excellence Centre Department of Applied and Environmental Chemistry University of Szeged Rerrich Béla tér 1 Szeged H‐6720 Hungary
| | - Tímea Hegedűs
- Interdisciplinary Excellence Centre Department of Applied and Environmental Chemistry University of Szeged Rerrich Béla tér 1 Szeged H‐6720 Hungary
| | | | - Dániel Berkesi
- Interdisciplinary Excellence Centre Department of Applied and Environmental Chemistry University of Szeged Rerrich Béla tér 1 Szeged H‐6720 Hungary
| | - Ákos Szamosvölgyi
- Interdisciplinary Excellence Centre Department of Applied and Environmental Chemistry University of Szeged Rerrich Béla tér 1 Szeged H‐6720 Hungary
| | - Zoltán Kónya
- Interdisciplinary Excellence Centre Department of Applied and Environmental Chemistry University of Szeged Rerrich Béla tér 1 Szeged H‐6720 Hungary
- MTA‐SZTE Reaction Kinetics and Surface Chemistry Research Group University of Szeged Rerrich Béla tér 1 Szeged H‐6720 Hungary
| | - Róbert Vajtai
- Department of Materials Science and NanoEngineering Rice University 6100 Main Street Houston Texas 77005 USA
| | - Ákos Kukovecz
- Interdisciplinary Excellence Centre Department of Applied and Environmental Chemistry University of Szeged Rerrich Béla tér 1 Szeged H‐6720 Hungary
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20
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Wan W, Wickramaratne D, Dreher P, Harsh R, Mazin II, Ugeda MM. Nontrivial Doping Evolution of Electronic Properties in Ising-Superconducting Alloys. Adv Mater 2022; 34:e2200492. [PMID: 35243698 DOI: 10.1002/adma.202200492] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Revised: 02/16/2022] [Indexed: 06/14/2023]
Abstract
Transition metal dichalcogenides offer unprecedented versatility to engineer 2D materials with tailored properties to explore novel structural and electronic phase transitions. In this work, the atomic-scale evolution of the electronic ground state of a monolayer of Nb1- δ Moδ Se2 across the entire alloy composition range (0 < δ < 1) is investigated using low-temperature (300 mK) scanning tunneling microscopy and spectroscopy (STM/STS). In particular, the atomic and electronic structure of this 2D alloy throughout the metal to semiconductor transition (monolayer NbSe2 to MoSe2 ) is studied. The measurements enable extraction of the effective doping of Mo atoms, the bandgap evolution and the band shifts, which are monotonic with δ. Furthermore, it is demonstrated that collective electronic phases (charge density wave and superconductivity) are remarkably robust against disorder and further shown that the superconducting TC changes non-monotonically with doping. This contrasting behavior in the normal and superconducting state is explained using first-principles calculations. Mo doping is shown to decrease the density of states at the Fermi level and the magnitude of pair-breaking spin fluctuations as a function of Mo content. These results paint a detailed picture of the electronic structure evolution in 2D TMD alloys, which is of utmost relevance for future 2D materials design.
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Affiliation(s)
- Wen Wan
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
| | - Darshana Wickramaratne
- Center for Computational Materials Science, U.S. Naval Research Laboratory, Washington, DC 20375, USA
| | - Paul Dreher
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
| | - Rishav Harsh
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
| | - Igor I Mazin
- Department of Physics and Astronomy, George Mason University, Fairfax, VA, 22030, USA
- Quantum Science and Engineering Center, George Mason University, Fairfax, VA, 22030, USA
| | - Miguel M Ugeda
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
- Centro de Física de Materiales (CSIC-UPV-EHU), Paseo Manuel de Lardizábal 5, San Sebastián, 20018, Spain
- Ikerbasque, Basque Foundation for Science, Bilbao, 48013, Spain
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21
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Wang QH, Bedoya-Pinto A, Blei M, Dismukes AH, Hamo A, Jenkins S, Koperski M, Liu Y, Sun QC, Telford EJ, Kim HH, Augustin M, Vool U, Yin JX, Li LH, Falin A, Dean CR, Casanova F, Evans RFL, Chshiev M, Mishchenko A, Petrovic C, He R, Zhao L, Tsen AW, Gerardot BD, Brotons-Gisbert M, Guguchia Z, Roy X, Tongay S, Wang Z, Hasan MZ, Wrachtrup J, Yacoby A, Fert A, Parkin S, Novoselov KS, Dai P, Balicas L, Santos EJG. The Magnetic Genome of Two-Dimensional van der Waals Materials. ACS Nano 2022; 16:6960-7079. [PMID: 35442017 PMCID: PMC9134533 DOI: 10.1021/acsnano.1c09150] [Citation(s) in RCA: 54] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 02/23/2022] [Indexed: 05/23/2023]
Abstract
Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.
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Affiliation(s)
- Qing Hua Wang
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Amilcar Bedoya-Pinto
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, 46980 Paterna, Spain
| | - Mark Blei
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Avalon H. Dismukes
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Assaf Hamo
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Sarah Jenkins
- Twist
Group,
Faculty of Physics, University of Duisburg-Essen, Campus Duisburg, 47057 Duisburg, Germany
| | - Maciej Koperski
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Yu Liu
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Qi-Chao Sun
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
| | - Evan J. Telford
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Hyun Ho Kim
- School
of Materials Science and Engineering, Department of Energy Engineering
Convergence, Kumoh National Institute of
Technology, Gumi 39177, Korea
| | - Mathias Augustin
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Uri Vool
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John Harvard
Distinguished Science Fellows Program, Harvard
University, Cambridge, Massachusetts 02138, United States
| | - Jia-Xin Yin
- Laboratory
for Topological Quantum Matter and Spectroscopy, Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
| | - Lu Hua Li
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Alexey Falin
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Cory R. Dean
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Fèlix Casanova
- CIC nanoGUNE
BRTA, 20018 Donostia - San Sebastián, Basque
Country, Spain
- IKERBASQUE,
Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Richard F. L. Evans
- Department
of Physics, University of York, Heslington, York YO10 5DD, United Kingdom
| | - Mairbek Chshiev
- Université
Grenoble Alpes, CEA, CNRS, Spintec, 38000 Grenoble, France
- Institut
Universitaire de France, 75231 Paris, France
| | - Artem Mishchenko
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Cedomir Petrovic
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Rui He
- Department
of Electrical and Computer Engineering, Texas Tech University, 910 Boston Avenue, Lubbock, Texas 79409, United
States
| | - Liuyan Zhao
- Department
of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109, United States
| | - Adam W. Tsen
- Institute
for Quantum Computing and Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Brian D. Gerardot
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Mauro Brotons-Gisbert
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Zurab Guguchia
- Laboratory
for Muon Spin Spectroscopy, Paul Scherrer
Institute, CH-5232 Villigen PSI, Switzerland
| | - Xavier Roy
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Sefaattin Tongay
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Ziwei Wang
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - M. Zahid Hasan
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Princeton
Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, United States
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
| | - Joerg Wrachtrup
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
- Max Planck
Institute for Solid State Research, 70569 Stuttgart, Germany
| | - Amir Yacoby
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A.
Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Albert Fert
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department
of Materials Physics UPV/EHU, 20018 Donostia - San Sebastián, Basque Country, Spain
| | - Stuart Parkin
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
| | - Kostya S. Novoselov
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Pengcheng Dai
- Department
of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Luis Balicas
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
- Department
of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Elton J. G. Santos
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Higgs Centre
for Theoretical Physics, The University
of Edinburgh, Edinburgh EH9 3FD, United Kingdom
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22
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Yang J, Zhou J, Lu J, Luo Z, Yang J, Shen L. Giant tunnelling electroresistance through 2D sliding ferroelectric materials. Mater Horiz 2022; 9:1422-1430. [PMID: 35343989 DOI: 10.1039/d2mh00080f] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN) and its novel sliding inversion mechanism were reported experimentally (Science2021, 372, 1458; 2021, 372, 1462), which paved a new way to realizing van der Waals (vdW) ferroelectric devices with new functionalities. Here, we develop vdW sliding ferroelectric tunnel junctions (FTJs) using the sliding ferroelectric BBN unit as an ultrathin barrier and explore their transport properties with different ferroelectric states and metal contacts via first principles. It is found that the electrode/BBN contact electric field quenches the ferroelectricity in the staggered BBN, resulting in a very small tunnelling electroresistance (TER). Inserting high-mobility 2D materials between Au and BN can restore the BBN ferroelectricity, reaching a giant TER of ∼10 000% in sliding FTJs. We finally investigate the metal-contact and thickness effect on the tunnelling property of sliding FTJs. The giant TER and multiple non-volatile resistance states in vdW sliding FTJs show promising applications in voltage-controlled nano-memories with ultrahigh storage density.
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Affiliation(s)
- Jie Yang
- State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, P. R. China.
- Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
| | - Jun Zhou
- Institute of Materials Research & Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, Singapore 138634, Singapore
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, P. R. China.
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Peking University, Beijing 100871, P. R. China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, P. R. China
| | - Zhaochu Luo
- State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, P. R. China.
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, P. R. China.
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Peking University, Beijing 100871, P. R. China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, P. R. China
| | - Lei Shen
- Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
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23
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Ling Z, Li P, Zhang SY, Arif N, Zeng YJ. Stability and passivation of 2D group VA elemental materials: black phosphorus and beyond. J Phys Condens Matter 2022; 34:224004. [PMID: 35259736 DOI: 10.1088/1361-648x/ac5bce] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2021] [Accepted: 03/08/2022] [Indexed: 06/14/2023]
Abstract
Since the successful isolation of graphene in 2004, two-dimensional (2D) materials have become one of the focuses in material science owing to their extraordinary physical and chemical properties. In particular, 2D group VA elemental materials exhibit fascinating thickness-dependent band structures. Unfortunately, the well-known instability issue hinders their fundamental researches and practical applications. In this review, we first discuss the degradation mechanism of black phosphorus (BP), a most studied group VA material. Next, we summarize the methods to enhance BP stability with the focus of multifunctional passivation. Finally, we briefly discuss the protection strategies of other emerging group VA materials in recent years. This review provides insight for the degradation mechanism and protecting strategy for 2D group VA elements materials, which will promote their potential applications in electronics, optoelectronics, and biomedicine.
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Affiliation(s)
- Zhaoheng Ling
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Peng Li
- College of New Energy, China University of Petroleum (East China), Qingdao, 266580, People's Republic of China
| | - Su-Yun Zhang
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Nayab Arif
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Yu-Jia Zeng
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
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24
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Zhang T, Grzeszczyk M, Li J, Yu W, Xu H, He P, Yang L, Qiu Z, Lin H, Yang H, Zeng J, Sun T, Li Z, Wu J, Lin M, Loh KP, Su C, Novoselov KS, Carvalho A, Koperski M, Lu J. Degradation Chemistry and Kinetic Stabilization of Magnetic CrI 3. J Am Chem Soc 2022; 144:5295-5303. [PMID: 35294182 DOI: 10.1021/jacs.1c08906] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
The discovery of the intrinsic magnetic order in single-layer chromium trihalides (CrX3, X = I, Br, and Cl) has drawn intensive interest due to their potential application in spintronic devices. However, the notorious environmental instability of this class of materials under ambient conditions renders their device fabrication and practical application extremely challenging. Here, we performed a systematic investigation of the degradation chemistry of chromium iodide (CrI3), the most studied among CrX3 families, via a joint spectroscopic and microscopic analysis of the structural and composition evolution of bulk and exfoliated nanoflakes in different environments. Unlike other air-sensitive 2D materials, CrI3 undergoes a pseudo-first-order hydrolysis in the presence of pure water toward the formation of amorphous Cr(OH)3 and hydrogen iodide (HI) with a rate constant of kI = 0.63 day-1 without light. In contrast, a faster pseudo-first-order surface oxidation of CrI3 occurs in a pure O2 environment, generating CrO3 and I2 with a large rate constant of kCr = 4.2 day-1. Both hydrolysis and surface oxidation of CrI3 can be accelerated via light irradiation, resulting in its ultrafast degradation in air. The new chemical insights obtained allow for the design of an effective stabilization strategy for CrI3 with preserved optical and magnetic properties. The use of organic acid solvents (e.g., formic acid) as reversible capping agents ensures that CrI3 nanoflakes remain stable beyond 1 month due to the effective suppression of both hydrolysis and oxidation of CrI3.
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Affiliation(s)
- Taiming Zhang
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.,Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Magdalena Grzeszczyk
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.,Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore
| | - Jing Li
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Wei Yu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Haomin Xu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Peng He
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.,Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Liming Yang
- Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117585, Singapore
| | - Zhizhan Qiu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - HuiHui Lin
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Huimin Yang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Jian Zeng
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Tao Sun
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Zejun Li
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Jishan Wu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Ming Lin
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 138634, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Chenliang Su
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Kostya S Novoselov
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.,Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore
| | - Alexandra Carvalho
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore.,Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Maciej Koperski
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.,Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore
| | - Jiong Lu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.,Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore
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25
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Wang H, Guo J, Miao J, Luo W, Gu Y, Xie R, Wang F, Zhang L, Wang P, Hu W. Emerging Single-Photon Detectors Based on Low-Dimensional Materials. Small 2022; 18:e2103963. [PMID: 34632717 DOI: 10.1002/smll.202103963] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2021] [Revised: 08/27/2021] [Indexed: 06/13/2023]
Abstract
Single-photon detectors (SPDs) that can sense individual photons are the most sensitive instruments for photodetection. Established SPDs such as conventional silicon or III-V compound semiconductor avalanche diodes and photomultiplier tubes have been used in a wide range of time-correlated photon-counting applications, including quantum information technologies, in vivo biomedical imaging, time-of-flight 3D scanners, and deep-space optical communications. However, further development of these fields requires more sophisticated detectors with high detection efficiency, fast response, and photon-number-resolving ability, etc. Thereby, significant efforts have been made to improve the performance of conventional SPDs and to develop new photon-counting technologies. In this review, the working mechanisms and key performance metrics of conventional SPDs are first summarized. Then emerging photon-counting detectors (in the visible to infrared range) based on 0D quantum dots, 1D quantum nanowires, and 2D layered materials are discussed. These low-dimensional materials exhibit many exotic properties due to the quantum confinement effect. And photodetectors built from these nD-materials (n = 0, 1, 2) can potentially be used for ultra-weak light detection. By reviewing the status and discussing the challenges faced by SPDs, this review aims to provide future perspectives on the research directions of emerging photon-counting technologies.
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Affiliation(s)
- Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Wenjin Luo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Yue Gu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lili Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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26
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Liu L, Gong P, Liu K, Nie A, Liu Z, Yang S, Xu Y, Liu T, Zhao Y, Huang L, Li H, Zhai T. Scalable Van der Waals Encapsulation by Inorganic Molecular Crystals. Adv Mater 2022; 34:e2106041. [PMID: 34865248 DOI: 10.1002/adma.202106041] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2021] [Revised: 11/22/2021] [Indexed: 06/13/2023]
Abstract
Encapsulation is critical for devices to guarantee their stability and reliability. It becomes an even more essential requirement for devices based on 2D materials with atomic thinness and far inferior stability compared to their bulk counterparts. Here a general van der Waals (vdW) encapsulation method for 2D materials using Sb2 O3 layer of inorganic molecular crystal fabricated via thermal evaporation deposition is reported. It is demonstrated that such a scalable encapsulation method not only maintains the intrinsic properties of typical air-susceptible 2D materials due to their vdW interactions but also remarkably improves their environmental stability. Specifically, the encapsulated black phosphorus (BP) exhibits greatly enhanced structural stability of over 80 days and more sustaining-electrical properties of 19 days, while the bare BP undergoes degradation within hours. Moreover, the encapsulation layer can be facilely removed by sublimation in vacuum without damaging the underlying materials. This scalable encapsulation method shows a promising pathway to effectively enhance the environmental stability of 2D materials, which may further boost their practical application in novel (opto)electronic devices.
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Affiliation(s)
- Lixin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Penglai Gong
- Department of Physics, Southern University of Science and Technology, Shenzhen, 5158055, P. R. China
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, Institute of Life Science and Green Development, College of Physics Science and Technology, Hebei University, Baoding, 071002, P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Anmin Nie
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Zhongyuan Liu
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Sanjun Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yongshan Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Teng Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Li Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 5158055, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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27
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Dreher P, Wan W, Chikina A, Bianchi M, Guo H, Harsh R, Mañas-Valero S, Coronado E, Martínez-Galera AJ, Hofmann P, Miwa JA, Ugeda MM. Proximity Effects on the Charge Density Wave Order and Superconductivity in Single-Layer NbSe 2. ACS Nano 2021; 15:19430-19438. [PMID: 34846856 PMCID: PMC8717633 DOI: 10.1021/acsnano.1c06012] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Accepted: 11/05/2021] [Indexed: 06/10/2023]
Abstract
Collective electronic states such as the charge density wave (CDW) order and superconductivity (SC) respond sensitively to external perturbations. Such sensitivity is dramatically enhanced in two dimensions (2D), where 2D materials hosting such electronic states are largely exposed to the environment. In this regard, the ineludible presence of supporting substrates triggers various proximity effects on 2D materials that may ultimately compromise the stability and properties of the electronic ground state. In this work, we investigate the impact of proximity effects on the CDW and superconducting states in single-layer (SL) NbSe2 on four substrates of diverse nature, namely, bilayer graphene (BLG), SL-boron nitride (h-BN), Au(111), and bulk WSe2. By combining low-temperature (340 mK) scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we compare the electronic structure of this prototypical 2D superconductor on each substrate. We find that, even when the electronic band structure of SL-NbSe2 remains largely unaffected by the substrate except when placed on Au(111), where a charge transfer occurs, both the CDW and SC show disparate behaviors. On the insulating h-BN/Ir(111) substrate and the metallic BLG/SiC(0001) substrate, both the 3 × 3 CDW and superconducting phases persist in SL-NbSe2 with very similar properties, which reveals the negligible impact of graphene on these electronic phases. In contrast, these collective electronic phases are severely weakened and even absent on the bulk insulating WSe2 substrate and the metallic single-crystal Au(111) substrate. Our results provide valuable insights into the fragile stability of such electronic ground states in 2D materials.
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Affiliation(s)
- Paul Dreher
- Donostia
International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, 20018 San Sebastián, Spain
| | - Wen Wan
- Donostia
International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, 20018 San Sebastián, Spain
| | - Alla Chikina
- Department
of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark
| | - Marco Bianchi
- Department
of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark
| | - Haojie Guo
- Departamento
de Física de la Materia Condensada, Universidad Autonoma de Madrid, Madrid E-28049, Spain
| | - Rishav Harsh
- Donostia
International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, 20018 San Sebastián, Spain
| | - Samuel Mañas-Valero
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, c/
Catedrático José Beltrán 2, 46980 Paterna, Spain
| | - Eugenio Coronado
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, c/
Catedrático José Beltrán 2, 46980 Paterna, Spain
| | - Antonio J. Martínez-Galera
- Departamento
de Física de la Materia Condensada, Universidad Autonoma de Madrid, Madrid E-28049, Spain
- Insitituto
Nicolás Cabrera, Universidad Autnoma
de Madrid, Madrid E-28049, Spain
| | - Philip Hofmann
- Department
of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark
| | - Jill A. Miwa
- Department
of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark
| | - Miguel M. Ugeda
- Donostia
International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, 20018 San Sebastián, Spain
- Centro
de Física de Materiales (CSIC-UPV-EHU), Paseo Manuel de Lardizábal 5, 20018 San Sebastián, Spain
- Ikerbasque,
Basque Foundation for Science, 48013 Bilbao, Spain
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28
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Antony A, Gustafsson MV, Rajendran A, Benyamini A, Ribeill G, Ohki TA, Hone J, Fong KC. Making high-quality quantum microwave devices with van der Waals superconductors. J Phys Condens Matter 2021; 34:103001. [PMID: 34847535 DOI: 10.1088/1361-648x/ac3e9d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2021] [Accepted: 11/30/2021] [Indexed: 06/13/2023]
Abstract
Ultra low-loss microwave materials are crucial for enhancing quantum coherence and scalability of superconducting qubits. Van der Waals (vdW) heterostructure is an attractive platform for quantum devices due to the single-crystal structure of the constituent two-dimensional (2D) layered materials and the lack of dangling bonds at their atomically sharp interfaces. However, new fabrication and characterization techniques are required to determine whether these structures can achieve low loss in the microwave regime. Here we report the fabrication of superconducting microwave resonators using NbSe2that achieve a quality factorQ> 105. This value sets an upper bound that corresponds to a resistance of⩽192μΩwhen considering the additional loss introduced by integrating NbSe2into a standard transmon circuit. This work demonstrates the compatibility of 2D layered materials with high-quality microwave quantum devices.
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Affiliation(s)
- Abhinandan Antony
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, United States of America
| | - Martin V Gustafsson
- Raytheon BBN Technologies, Quantum Engineering and Computing Group, Cambridge, MA 02138, United States of America
| | - Anjaly Rajendran
- Department of Electrical Engineering, Columbia University, New York, NY 10027, United States of America
| | - Avishai Benyamini
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, United States of America
| | - Guilhem Ribeill
- Raytheon BBN Technologies, Quantum Engineering and Computing Group, Cambridge, MA 02138, United States of America
| | - Thomas A Ohki
- Raytheon BBN Technologies, Quantum Engineering and Computing Group, Cambridge, MA 02138, United States of America
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, United States of America
| | - Kin Chung Fong
- Raytheon BBN Technologies, Quantum Engineering and Computing Group, Cambridge, MA 02138, United States of America
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29
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Lehnert T, Kretschmer S, Bräuer F, Krasheninnikov AV, Kaiser U. Quasi-two-dimensional NaCl crystals encapsulated between graphene sheets and their decomposition under an electron beam. Nanoscale 2021; 13:19626-19633. [PMID: 34816852 DOI: 10.1039/d1nr04792b] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Quasi-two-dimensional (2D) sodium chloride (NaCl) crystals of various lateral sizes between graphene sheets were manufactured via supersaturation from a saline solution. Aberration-corrected transmission electron microscopy was used for systematic in situ investigations of the crystals and their decomposition under an 80 kV electron beam. Counterintuitively, bigger clusters were found to disintegrate faster under electron irradiation, but in general no correlation between crystal sizes and electron doses at which the crystals decompose was found. As for the destruction process, an abrupt decomposition of the crystals was observed, which can be described by a logistic decay function. Density-functional theory molecular dynamics simulations provide insights into the destruction mechanism, and indicate that even without account for ionization and electron excitations, free-standing NaCl crystals must quickly disintegrate due to the ballistic displacement of atoms from their surface and edges during imaging. However, graphene sheets mitigate damage development by stopping the displaced atoms and enable the immediate recombination of defects at the surface of the crystal. At the same time, once a hole in graphene appears, the displaced atoms escape, giving rise to the quick destruction of the crystal. Our results provide quantitative data on the stability of encapsulated quasi 2D NaCl crystals under electron irradiation and allow the conclusion that only high-quality graphene is suitable for protecting ionic crystals from beam damage in electron microscopy studies.
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Affiliation(s)
- Tibor Lehnert
- Electron Microscopy Group of Materials Science, Ulm University, 89081 Ulm, Germany.
- Institute for Quantum Optics, Ulm University, 89081 Ulm, Germany
| | - Silvan Kretschmer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Fredrik Bräuer
- Electron Microscopy Group of Materials Science, Ulm University, 89081 Ulm, Germany.
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- Department of Applied Physics, Aalto University, P.O. Box 11100, 00076 Aalto, Finland
| | - Ute Kaiser
- Electron Microscopy Group of Materials Science, Ulm University, 89081 Ulm, Germany.
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30
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Abstract
Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.
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Affiliation(s)
- Yuda Zhao
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France.,School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, 310027 Hangzhou, People's Republic of China
| | - Marco Gobbi
- Centro de Fisica de Materiales (CSIC-UPV/EHU), Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain.,CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Luis E Hueso
- CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
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31
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Roy S, Zhang X, Puthirath AB, Meiyazhagan A, Bhattacharyya S, Rahman MM, Babu G, Susarla S, Saju SK, Tran MK, Sassi LM, Saadi MASR, Lai J, Sahin O, Sajadi SM, Dharmarajan B, Salpekar D, Chakingal N, Baburaj A, Shuai X, Adumbumkulath A, Miller KA, Gayle JM, Ajnsztajn A, Prasankumar T, Harikrishnan VVJ, Ojha V, Kannan H, Khater AZ, Zhu Z, Iyengar SA, Autreto PADS, Oliveira EF, Gao G, Birdwell AG, Neupane MR, Ivanov TG, Taha-Tijerina J, Yadav RM, Arepalli S, Vajtai R, Ajayan PM. Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride. Adv Mater 2021; 33:e2101589. [PMID: 34561916 DOI: 10.1002/adma.202101589] [Citation(s) in RCA: 94] [Impact Index Per Article: 31.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2021] [Revised: 05/24/2021] [Indexed: 05/09/2023]
Abstract
Hexagonal boron nitride (h-BN) has emerged as a strong candidate for two-dimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical robustness, thermal stability, and chemical inertness. Super-thin h-BN layers have gained significant attention from the scientific community for many applications, including nanoelectronics, photonics, biomedical, anti-corrosion, and catalysis, among others. This review provides a systematic elaboration of the structural, electrical, mechanical, optical, and thermal properties of h-BN followed by a comprehensive account of state-of-the-art synthesis strategies for 2D h-BN, including chemical exfoliation, chemical, and physical vapor deposition, and other methods that have been successfully developed in recent years. It further elaborates a wide variety of processing routes developed for doping, substitution, functionalization, and combination with other materials to form heterostructures. Based on the extraordinary properties and thermal-mechanical-chemical stability of 2D h-BN, various potential applications of these structures are described.
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Affiliation(s)
- Soumyabrata Roy
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Anand B Puthirath
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ashokkumar Meiyazhagan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sohini Bhattacharyya
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Muhammad M Rahman
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ganguli Babu
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sandhya Susarla
- Materials Science Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA, 94720, USA
| | - Sreehari K Saju
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Mai Kim Tran
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Lucas M Sassi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - M A S R Saadi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Jiawei Lai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Onur Sahin
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Seyed Mohammad Sajadi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Bhuvaneswari Dharmarajan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Devashish Salpekar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Nithya Chakingal
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Abhijit Baburaj
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Xinting Shuai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Aparna Adumbumkulath
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Kristen A Miller
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Jessica M Gayle
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Alec Ajnsztajn
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Thibeorchews Prasankumar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | | | - Ved Ojha
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Harikishan Kannan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ali Zein Khater
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Zhenwei Zhu
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sathvik Ajay Iyengar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Pedro Alves da Silva Autreto
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Center for Natural and Human Sciences, Federal University of ABC (UFABC), Av. Dos Estados, 5001-Bangú, Santo André - SP, Santo André, 09210-580, Brazil
| | - Eliezer Fernando Oliveira
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Applied Physics Department, State University of Campinas - UNICAMP, Campinas, São Paulo, 13083-859, Brazil
- Center for Computational Engineering and Sciences (CCES), State University of Campinas - UNICAMP, Campinas, São Paulo, 13083-859, Brazil
| | - Guanhui Gao
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - A Glen Birdwell
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Mahesh R Neupane
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Tony G Ivanov
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Jaime Taha-Tijerina
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Engineering Department, Universidad de Monterrey, Av. Ignacio Morones Prieto 4500 Pte., San Pedro Garza Garcí, Monterrey, Nuevo Leon, 66238, Mexico
- Department of Manufacturing and Industrial Engineering, University of Texas Rio Grande Valley, Brownsville, TX, 78520, USA
| | - Ram Manohar Yadav
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Department of Physics, VSSD College, Kanpur, Uttar Pradesh, 208002, India
| | - Sivaram Arepalli
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
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32
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Affiliation(s)
- Hui-Zhen Zhang
- National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences School of Physics Key Laboratory of Intelligent Optical Sensing and Manipulation Ministry of Education Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing 210093 P. R. China
| | - Wen-Jing Wu
- Department of Electrical Engineering The Pennsylvania State University University Park Pennsylvania 16802 USA
| | - Lin Zhou
- National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences School of Physics Key Laboratory of Intelligent Optical Sensing and Manipulation Ministry of Education Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing 210093 P. R. China
| | - Zhen Wu
- National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences School of Physics Key Laboratory of Intelligent Optical Sensing and Manipulation Ministry of Education Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing 210093 P. R. China
| | - Jia Zhu
- National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences School of Physics Key Laboratory of Intelligent Optical Sensing and Manipulation Ministry of Education Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing 210093 P. R. China
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Niu K, Weng M, Li S, Guo Z, Wang G, Han M, Pan F, Lin J. Direct Visualization of Large-Scale Intrinsic Atomic Lattice Structure and Its Collective Anisotropy in Air-Sensitive Monolayer 1T'- WTe 2. Adv Sci (Weinh) 2021; 8:e2101563. [PMID: 34467674 PMCID: PMC8529427 DOI: 10.1002/advs.202101563] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/26/2021] [Revised: 07/22/2021] [Indexed: 06/13/2023]
Abstract
Probing large-scale intrinsic structure of air-sensitive 2D materials with atomic resolution is so far challenging due to their rapid oxidization and contamination. Here, by keeping the whole experiment including growth, transfer, and characterizations in an interconnected atmosphere-control environment, the large-scale intact lattice structure of air-sensitive monolayer 1T'-WTe2 is directly visualized by atom-resolved scanning transmission electron microscopy. Benefit from the large-scale atomic mapping, collective lattice distortions are further unveiled due to the presence of anisotropic rippling, which propagates perpendicular to only one of the preferential lattice planes in the same WTe2 monolayer. Such anisotropic lattice rippling modulates the intrinsic point defect (Te vacancy) distribution, in which they aggregate at the constrictive inner side of the undulating structure, presumably due to the ripple-induced asymmetric strain as elaborated by density functional theory. The results pave the way for atomic characterizations and defect engineering of air-sensitive 2D layered materials.
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Affiliation(s)
- Kangdi Niu
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and DevicesSouthern University of Science and TechnologyShenzhen518055China
| | - Mouyi Weng
- School of Advanced MaterialsPeking UniversityShenzhen Graduate SchoolShenzhen518055China
| | - Songge Li
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Zenglong Guo
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Gang Wang
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Mengjiao Han
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and DevicesSouthern University of Science and TechnologyShenzhen518055China
| | - Feng Pan
- School of Advanced MaterialsPeking UniversityShenzhen Graduate SchoolShenzhen518055China
| | - Junhao Lin
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and DevicesSouthern University of Science and TechnologyShenzhen518055China
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Schranghamer TF, Sharma M, Singh R, Das S. Review and comparison of layer transfer methods for two-dimensional materials for emerging applications. Chem Soc Rev 2021; 50:11032-11054. [PMID: 34397050 DOI: 10.1039/d1cs00706h] [Citation(s) in RCA: 32] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Abstract
Two-dimensional (2D) materials offer immense potential for scientific breakthroughs and technological innovations. While early demonstrations of 2D material-based electronics, optoelectronics, flextronics, straintronics, twistronics, and biomimetic devices exploited micromechanically-exfoliated single crystal flakes, recent years have witnessed steady progress in large-area growth techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and metal-organic CVD (MOCVD). However, use of high growth temperatures, chemically-active growth precursors and promoters, and the need for epitaxy often limit direct growth of 2D materials on the substrates of interest for commercial applications. This has led to the development of a large number of methods for the layer transfer of 2D materials from the growth substrate to the target application substrate with varying degrees of cleanliness, uniformity, and transfer-related damage. This review aims to catalog and discuss these layer transfer methods. In particular, the processes, advantages, and drawbacks of various transfer methods are discussed, as is their applicability to different technological platforms of interest for 2D material implementation.
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Affiliation(s)
- Thomas F Schranghamer
- Department of Engineering Science and Mechanics, Penn State University, University Park, PA 16802, USA.
| | - Madan Sharma
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Rajendra Singh
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Saptarshi Das
- Department of Engineering Science and Mechanics, Penn State University, University Park, PA 16802, USA. and Department of Materials Science and Engineering, Penn State University, University Park, PA 16802, USA and Materials Research Institute, Penn State University, University Park, PA 16802, USA
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35
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Altvater MA, Tilak N, Rao S, Li G, Won CJ, Cheong SW, Andrei EY. Charge Density Wave Vortex Lattice Observed in Graphene-Passivated 1T-TaS 2 by Ambient Scanning Tunneling Microscopy. Nano Lett 2021; 21:6132-6138. [PMID: 34231367 DOI: 10.1021/acs.nanolett.1c01655] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The nearly commensurate charge density wave (CDW) excitations native to the transition-metal dichalcogenide crystal, 1T-TaS2, under ambient conditions are revealed by scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of a graphene/TaS2 heterostructure. Surface potential measurements show that the graphene passivation layer prevents oxidation of the air-sensitive 1T-TaS2 surface. The graphene protective layer does not however interfere with probing the native electronic properties of 1T-TaS2 by STM/STS, which revealed that nearly commensurate CDW hosts an array of vortex-like topological defects. We find that these topological defects organize themselves to form a lattice with quasi-long-range order, analogous to the vortex Bragg glass in type-II superconductors but accessible in ambient conditions.
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Affiliation(s)
- Michael A Altvater
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
| | - Nikhil Tilak
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
| | - Skandaprasad Rao
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
| | - Guohong Li
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
| | - Choong-Jae Won
- Laboratory for Pohang Emergent Materials, Pohang Accelerator Laboratory and Max Plank POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 790-784, Korea
| | - Sang-Wook Cheong
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
- Laboratory for Pohang Emergent Materials, Pohang Accelerator Laboratory and Max Plank POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 790-784, Korea
- Center for Quantum Materials Synthesis, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, United States
| | - Eva Y Andrei
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
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36
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Pugachev MV, Duleba AI, Galiullin AA, Kuntsevich AY. Micromask Lithography for Cheap and Fast 2D Materials Microstructures Fabrication. Micromachines (Basel) 2021; 12:850. [PMID: 34442473 DOI: 10.3390/mi12080850] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/23/2021] [Revised: 07/15/2021] [Accepted: 07/19/2021] [Indexed: 12/17/2022]
Abstract
The fast and precise fabrication of micro-devices based on single flakes of novel 2D materials and stacked heterostructures is vital for exploration of novel functionalities. In this paper, we demonstrate a fast high-resolution contact mask lithography through a simple upgrade of metallographic optical microscope. Suggested kit for the micromask lithography is compact and easily compatible with a glove box, thus being suitable for a wide range of air-unstable materials. The shadow masks could be either ordered commercially or fabricated in a laboratory using a beam lithography. The processes of the mask alignment and the resist exposure take a few minutes and provide a micrometer resolution. With the total price of the kit components around USD 200, our approach would be convenient for laboratories with the limited access to commercial lithographic systems.
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37
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Vizner Stern M, Waschitz Y, Cao W, Nevo I, Watanabe K, Taniguchi T, Sela E, Urbakh M, Hod O, Ben Shalom M. Interfacial ferroelectricity by van der Waals sliding. Science 2021; 372:eabe8177. [PMID: 34112727 DOI: 10.1126/science.abe8177] [Citation(s) in RCA: 122] [Impact Index Per Article: 40.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2020] [Accepted: 05/10/2021] [Indexed: 12/14/2022]
Abstract
Despite their partial ionic nature, many layered diatomic crystals avoid internal electric polarization by forming a centrosymmetric lattice at their optimal van-der-Waals stacking. Here, we report a stable ferroelectric order emerging at the interface between two naturally-grown flakes of hexagonal-boron-nitride, which are stacked together in a metastable non-centrosymmetric parallel orientation. We observe alternating domains of inverted normal polarization, caused by a lateral shift of one lattice site between the domains. Reversible polarization switching coupled to lateral sliding is achieved by scanning a biased tip above the surface. Our calculations trace the origin of the phenomenon to a subtle interplay between charge redistribution and ionic displacement, and provide intuitive insights to explore the interfacial polarization and its unique "slidetronics" switching mechanism.
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Affiliation(s)
- M Vizner Stern
- School of Physics and Astronomy, Tel Aviv University, Israel
| | - Y Waschitz
- School of Physics and Astronomy, Tel Aviv University, Israel
| | - W Cao
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - I Nevo
- School of Physics and Astronomy, Tel Aviv University, Israel
| | - K Watanabe
- National Institute for Material Science, Tsukuba, Japan
| | - T Taniguchi
- National Institute for Material Science, Tsukuba, Japan
| | - E Sela
- School of Physics and Astronomy, Tel Aviv University, Israel
| | - M Urbakh
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - O Hod
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - M Ben Shalom
- School of Physics and Astronomy, Tel Aviv University, Israel.
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38
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Qiu D, Gong C, Wang S, Zhang M, Yang C, Wang X, Xiong J. Recent Advances in 2D Superconductors. Adv Mater 2021; 33:e2006124. [PMID: 33768653 DOI: 10.1002/adma.202006124] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2020] [Revised: 10/22/2020] [Indexed: 06/12/2023]
Abstract
The emergence of superconductivity in 2D materials has attracted much attention and there has been rapid development in recent years because of their fruitful physical properties, such as high transition temperature (Tc ), continuous phase transition, and enhanced parallel critical magnetic field (Bc ). Tremendous efforts have been devoted to exploring different physical parameters to figure out the mechanisms behind the unexpected superconductivity phenomena, including adjusting the thickness of samples, fabricating various heterostructures, tuning the carrier density by electric field and chemical doping, and so on. Here, different types of 2D superconductivity with their unique characteristics are introduced, including the conventional Bardeen-Cooper-Schrieffer superconductivity in ultrathin films, high-Tc superconductivity in Fe-based and Cu-based 2D superconductors, unconventional superconductivity in newly discovered twist-angle bilayer graphene, superconductivity with enhanced Bc , and topological superconductivity. A perspective toward this field is then proposed based on academic knowledge from the recently reported literature. The aim is to provide researchers with a clear and comprehensive understanding about the newly developed 2D superconductivity and promote the development of this field much further.
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Affiliation(s)
- Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chuanhui Gong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - SiShuang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Miao Zhang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chao Yang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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39
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Li J, Song P, Zhao J, Vaklinova K, Zhao X, Li Z, Qiu Z, Wang Z, Lin L, Zhao M, Herng TS, Zuo Y, Jonhson W, Yu W, Hai X, Lyu P, Xu H, Yang H, Chen C, Pennycook SJ, Ding J, Teng J, Castro Neto AH, Novoselov KS, Lu J. Printable two-dimensional superconducting monolayers. Nat Mater 2021; 20:181-187. [PMID: 33106649 DOI: 10.1038/s41563-020-00831-1] [Citation(s) in RCA: 45] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2020] [Accepted: 09/15/2020] [Indexed: 06/11/2023]
Abstract
Two-dimensional superconductor (2DSC) monolayers with non-centrosymmetry exhibit unconventional Ising pair superconductivity and an enhanced upper critical field beyond the Pauli paramagnetic limit, driving intense research interest. However, they are often susceptible to structural disorder and environmental oxidation, which destroy electronic coherence and provide technical challenges in the creation of artificial van der Waals heterostructures (vdWHs) for devices. Herein, we report a general and scalable synthesis of highly crystalline 2DSC monolayers via a mild electrochemical exfoliation method using flexible organic ammonium cations solvated with neutral solvent molecules as co-intercalants. Using NbSe2 as a model system, we achieved a high yield (>75%) of large-sized single-crystal monolayers up to 300 µm. The as-fabricated, twisted NbSe2 vdWHs demonstrate high stability, good interfacial properties and a critical current that is modulated by magnetic field when one flux quantum fits to an integer number of moiré cells. Additionally, formulated 2DSC inks can be exploited to fabricate wafer-scale 2D superconducting wire arrays and three-dimensional superconducting composites with desirable morphologies.
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Affiliation(s)
- Jing Li
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
| | - Peng Song
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Jinpei Zhao
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Kristina Vaklinova
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
| | - Xiaoxu Zhao
- Department of Materials Science & Engineering, National University of Singapore, Singapore, Singapore
| | - Zejun Li
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Zhizhan Qiu
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Zihao Wang
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Li Lin
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Meng Zhao
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore, Singapore
| | - Tun Seng Herng
- Department of Materials Science & Engineering, National University of Singapore, Singapore, Singapore
| | - Yuxin Zuo
- Department of Materials Science & Engineering, National University of Singapore, Singapore, Singapore
| | - Win Jonhson
- Department of Materials Science & Engineering, National University of Singapore, Singapore, Singapore
| | - Wei Yu
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Xiao Hai
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Pin Lyu
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Haomin Xu
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Huimin Yang
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Cheng Chen
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Stephen J Pennycook
- Department of Materials Science & Engineering, National University of Singapore, Singapore, Singapore
| | - Jun Ding
- Department of Materials Science & Engineering, National University of Singapore, Singapore, Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore, Singapore
| | - A H Castro Neto
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
- Department of Materials Science & Engineering, National University of Singapore, Singapore, Singapore
| | - Kostya S Novoselov
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore.
- Department of Materials Science & Engineering, National University of Singapore, Singapore, Singapore.
- National Graphene Institute, University of Manchester, Manchester, UK.
| | - Jiong Lu
- Department of Chemistry, National University of Singapore, Singapore, Singapore.
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore.
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40
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Pai YH, Chen CH. Long-term can-sealing protection: a stable black phosphorus nanoassembly achieved through heterogeneous hydrophobic functionalization. Nanoscale 2021; 13:763-775. [PMID: 33367356 DOI: 10.1039/d0nr08364j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Black phosphorus (BP), a promising 2D material, has sparked a research boom in various areas, while its fatal atmospheric instability seriously obstructs the progress of most practical applications. To realize the novel scalable concept of can-sealing protection, the selective deposition of a series of hydrophobically- or hydrophilically-functionalized Al2O3 nanostructured capping layers has been successfully achieved to seal the top surface of the exfoliated BP flake assemblies on Ag-patterned substrates. The hydrophobic Al2O3 columnar capping is evidenced as the most promising candidate to provide comprehensive protection against the severe rapid degradation of pristine BP even under a very high-humidity environment (RH = 85%) for a long period of time. The present work provides valuable insight into the distinct anisotropic degradation of the sealed BP flake assemblies evidently induced by the deposited hydrophobically- or hydrophilically-functionalized Al2O3 capping.
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Affiliation(s)
- Ying-Hao Pai
- Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu, 30010 Taiwan, Republic of China.
| | - Chun-Hua Chen
- Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu, 30010 Taiwan, Republic of China.
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41
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Calavalle F, Dreher P, Surdendran AP, Wan W, Timpel M, Verucchi R, Rogero C, Bauch T, Lombardi F, Casanova F, Nardi MV, Ugeda MM, Hueso LE, Gobbi M. Tailoring Superconductivity in Large-Area Single -Layer NbSe 2 via Self-Assembled Molecular Adlayers. Nano Lett 2021; 21:136-143. [PMID: 33274947 DOI: 10.1021/acs.nanolett.0c03386] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search of materials by design, because their optoelectronic properties can be manipulated through surface engineering and molecular functionalization. However, the impact of molecules on intrinsic physical properties of TMDs, such as superconductivity, remains largely unexplored. In this work, the critical temperature (TC) of large-area NbSe2 monolayers is manipulated, employing ultrathin molecular adlayers. Spectroscopic evidence indicates that aligned molecular dipoles within the self-assembled layers act as a fixed gate terminal, collectively generating a macroscopic electrostatic field on NbSe2. This results in an ∼55% increase and a 70% decrease in TC depending on the electric field polarity, which is controlled via molecular selection. The reported functionalization, which improves the air stability of NbSe2, is efficient, practical, up-scalable, and suited to functionalize large-area TMDs. Our results indicate the potential of hybrid 2D materials as a novel platform for tunable superconductivity.
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Affiliation(s)
| | - Paul Dreher
- Donostia International Physics Center DIPC, Donostia-San Sebastian, Basque Country 20018, Spain
| | - Ananthu P Surdendran
- Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg SE-41296, Sweden
| | - Wen Wan
- Donostia International Physics Center DIPC, Donostia-San Sebastian, Basque Country 20018, Spain
| | - Melanie Timpel
- Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C, Povo, Trento IT-38123, Italy
| | - Roberto Verucchi
- Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C, Povo, Trento IT-38123, Italy
| | - Celia Rogero
- Materials Physics Center CSIC-UPV/EHU, 20018 Donostia-San Sebastian, Spain
- Donostia International Physics Center DIPC, Donostia-San Sebastian, Basque Country 20018, Spain
| | - Thilo Bauch
- Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg SE-41296, Sweden
| | - Floriana Lombardi
- Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg SE-41296, Sweden
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Basque Country 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country 48013, Spain
| | - Marco Vittorio Nardi
- Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C, Povo, Trento IT-38123, Italy
| | - Miguel M Ugeda
- Materials Physics Center CSIC-UPV/EHU, 20018 Donostia-San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country 48013, Spain
- Donostia International Physics Center DIPC, Donostia-San Sebastian, Basque Country 20018, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Basque Country 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country 48013, Spain
| | - Marco Gobbi
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Basque Country 20018, Spain
- Materials Physics Center CSIC-UPV/EHU, 20018 Donostia-San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country 48013, Spain
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42
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Zheng H, Lu Y, Ye KH, Hu J, Liu S, Yan J, Ye Y, Guo Y, Lin Z, Cheng J, Cao Y. Atomically thin photoanode of InSe/graphene heterostructure. Nat Commun 2021; 12:91. [PMID: 33398029 PMCID: PMC7782821 DOI: 10.1038/s41467-020-20341-7] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2020] [Accepted: 11/25/2020] [Indexed: 11/09/2022] Open
Abstract
Achieving high-efficiency photoelectrochemical water splitting requires a better understanding of ion kinetics, e.g., diffusion, adsorption and reactions, near the photoelectrode's surface. However, with macroscopic three-dimensional electrodes, it is often difficult to disentangle the contributions of surface effects to the total photocurrent from that of various factors in the bulk. Here, we report a photoanode made from a InSe crystal monolayer that is encapsulated with monolayer graphene to ensure high stability. We choose InSe among other photoresponsive two-dimensional (2D) materials because of its unique properties of high mobility and strongly suppressing electron-hole pair recombination. Using the atomically thin electrodes, we obtained a photocurrent with a density >10 mA cm-2 at 1.23 V versus reversible hydrogen electrode, which is several orders of magnitude greater than other 2D photoelectrodes. In addition to the outstanding characteristics of InSe, we attribute the enhanced photocurrent to the strong coupling between the hydroxide ions and photo-generated holes near the anode surface. As a result, a persistent current even after illumination ceased was also observed due to the presence of ions trapped holes with suppressed electron-hole recombination. Our results provide atomically thin materials as a platform for investigating ion kinetics at the electrode surface and shed light on developing next-generation photoelectrodes with high efficiency.
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Affiliation(s)
- Haihong Zheng
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Yizhen Lu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Kai-Hang Ye
- Guangzhou Key Laboratory of Clean Transportation Energy Chemistry, School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006, China
| | - Jinyuan Hu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Shuai Liu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Jiawei Yan
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Yuxi Guo
- Guangzhou Key Laboratory of Clean Transportation Energy Chemistry, School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006, China
| | - Zhan Lin
- Guangzhou Key Laboratory of Clean Transportation Energy Chemistry, School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006, China
| | - Jun Cheng
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.
| | - Yang Cao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China. .,Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China.
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43
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Vincent T, Hamer M, Grigorieva I, Antonov V, Tzalenchuk A, Kazakova O. Strongly Absorbing Nanoscale Infrared Domains within Strained Bubbles at hBN-Graphene Interfaces. ACS Appl Mater Interfaces 2020; 12:57638-57648. [PMID: 33314909 DOI: 10.1021/acsami.0c19334] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Graphene has great potential for use in infrared (IR) nanodevices. At these length scales, nanoscale features, and their interaction with light, can be expected to play a significant role in device performance. Bubbles in van der Waals heterostructures are one such feature, which have recently attracted considerable attention, thanks to their ability to modify the optoelectronic properties of two-dimensional (2D) materials through strain. Here, we use scattering-type scanning near-field optical microscopy (sSNOM) to measure the nanoscale IR response from a network of variously shaped bubbles in hexagonal boron nitride (hBN)-encapsulated graphene. We show that within individual bubbles there are distinct domains with strongly enhanced IR absorption. The IR domain boundaries coincide with ridges in the bubbles, which leads us to attribute them to nanoscale strain domains. We further validate the strain distribution in the graphene by means of confocal Raman microscopy and vector decomposition analysis. This shows intricate and varied strain configurations, in which bubbles of different shape induce more bi- or uniaxial strain configurations. This reveals pathways toward future strain-based graphene IR devices.
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Affiliation(s)
- Tom Vincent
- National Physical Laboratory, Hampton Road, Teddington TW11 0LW, U.K
- Department of Physics, Royal Holloway University of London, Egham TW20 0EX, U.K
| | - Matthew Hamer
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, U.K
- National Graphene Institute, University of Manchester, Manchester M13 9PL, U.K
| | - Irina Grigorieva
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, U.K
- National Graphene Institute, University of Manchester, Manchester M13 9PL, U.K
| | - Vladimir Antonov
- Department of Physics, Royal Holloway University of London, Egham TW20 0EX, U.K
- Skolkovo Institute of Science and Technology, Moscow 143026, Russia
| | - Alexander Tzalenchuk
- National Physical Laboratory, Hampton Road, Teddington TW11 0LW, U.K
- Department of Physics, Royal Holloway University of London, Egham TW20 0EX, U.K
| | - Olga Kazakova
- National Physical Laboratory, Hampton Road, Teddington TW11 0LW, U.K
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44
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Molas MR, Tyurnina AV, Zólyomi V, Ott AK, Terry DJ, Hamer MJ, Yelgel C, Babiński A, Nasibulin AG, Ferrari AC, Fal'ko VI, Gorbachev R. Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers. Faraday Discuss 2020; 227:163-170. [PMID: 33325929 DOI: 10.1039/d0fd00007h] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations.
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Affiliation(s)
- Maciej R Molas
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warszawa, Poland
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45
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Smith LW, Batey JO, Alexander-Webber JA, Fan Y, Hsieh YC, Fung SJ, Jevtics D, Robertson J, Guilhabert BJE, Strain MJ, Dawson MD, Hurtado A, Griffiths JP, Beere HE, Jagadish C, Burton OJ, Hofmann S, Chen TM, Ritchie DA, Kelly M, Joyce HJ, Smith CG. High-Throughput Electrical Characterization of Nanomaterials from Room to Cryogenic Temperatures. ACS Nano 2020; 14:15293-15305. [PMID: 33104341 DOI: 10.1021/acsnano.0c05622] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We present multiplexer methodology and hardware for nanoelectronic device characterization. This high-throughput and scalable approach to testing large arrays of nanodevices operates from room temperature to milli-Kelvin temperatures and is universally compatible with different materials and integration techniques. We demonstrate the applicability of our approach on two archetypal nanomaterials-graphene and semiconductor nanowires-integrated with a GaAs-based multiplexer using wet or dry transfer methods. A graphene film grown by chemical vapor deposition is transferred and patterned into an array of individual devices, achieving 94% yield. Device performance is evaluated using data fitting methods to obtain electrical transport metrics, showing mobilities comparable to nonmultiplexed devices fabricated on oxide substrates using wet transfer techniques. Separate arrays of indium-arsenide nanowires and micromechanically exfoliated monolayer graphene flakes are transferred using pick-and-place techniques. For the nanowire array mean values for mobility μFE = 880/3180 cm2 V-1 s-1 (lower/upper bound), subthreshold swing 430 mV dec-1, and on/off ratio 3.1 decades are extracted, similar to nonmultiplexed devices. In another array, eight mechanically exfoliated graphene flakes are transferred using techniques compatible with fabrication of two-dimensional superlattices, with 75% yield. Our results are a proof-of-concept demonstration of a versatile platform for scalable fabrication and cryogenic characterization of nanomaterial device arrays, which is compatible with a broad range of nanomaterials, transfer techniques, and device integration strategies from the forefront of quantum technology research.
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Affiliation(s)
- Luke W Smith
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
| | - Jack O Batey
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
| | - Jack A Alexander-Webber
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Ye Fan
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Yu-Chiang Hsieh
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Shin-Jr Fung
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Dimitars Jevtics
- Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD, Glasgow, U.K
| | - Joshua Robertson
- Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD, Glasgow, U.K
| | - Benoit J E Guilhabert
- Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD, Glasgow, U.K
| | - Michael J Strain
- Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD, Glasgow, U.K
| | - Martin D Dawson
- Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD, Glasgow, U.K
| | - Antonio Hurtado
- Institute of Photonics, Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD, Glasgow, U.K
| | - Jonathan P Griffiths
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
| | - Harvey E Beere
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering and Australian Research Council Centre of Excellence on Tranformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Oliver J Burton
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Stephan Hofmann
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Tse-Ming Chen
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - David A Ritchie
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
| | - Michael Kelly
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Hannah J Joyce
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Charles G Smith
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K
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46
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Jiang D, Yuan T, Wu Y, Wei X, Mu G, An Z, Li W. Strong In-Plane Magnetic Field-Induced Reemergent Superconductivity in the van der Waals Heterointerface of NbSe 2 and CrCl 3. ACS Appl Mater Interfaces 2020; 12:49252-49257. [PMID: 33058667 DOI: 10.1021/acsami.0c15203] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A magnetic field is generally considered to be incompatible with superconductivity as it tends to spin-polarize electrons and breaks apart the opposite-spin singlet superconducting Cooper pairs. Here, an experimental phenomenon is observed that an intriguing reemergent superconductivity evolves from a conventional superconductivity undergoing a hump-like intermediate phase with a finite electric resistance in the van der Waals heterointerface of layered NbSe2 and CrCl3 flakes. This phenomenon merely occurred when the applied magnetic field is parallel to the sample plane and perpendicular to the electric current direction as compared to the reference sample of a NbSe2 thin flake. The strong anisotropy of the reemergent superconducting phase is pointed to the nature of the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state driven by the strong interfacial spin-orbit coupling between NbSe2 and CrCl3 layers. The theoretical picture of FFLO state nodes induced by Josephson vortices collectively pinning is presented for well understanding the experimental observation of the reemergent superconductivity. This finding sheds light on an opportunity to search for the exotic FFLO state in the van der Waals heterostructures with strong interfacial spin-orbit coupling.
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Affiliation(s)
- Da Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, and Center for Excellence in Superconducting Electronics, Chinese Academy of Science, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tianzhong Yuan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Yongzheng Wu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Xinyuan Wei
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Gang Mu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, and Center for Excellence in Superconducting Electronics, Chinese Academy of Science, Shanghai 200050, People's Republic of China
| | - Zhenghua An
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Wei Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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47
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Faraone G, Balduzzi E, Martella C, Grazianetti C, Molle A, Bonera E. Thickness determination of anisotropic van der Waals crystals by raman spectroscopy: the case of black phosphorus. Nanotechnology 2020; 31:415703. [PMID: 32544892 DOI: 10.1088/1361-6528/ab9d3f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The large foreseeable use two-dimensional materials in nanotechnology consequently demands precise methods for their thickness measurements. Usually, having a quick and easy methodology is a key requisite for the inspection of the large number of flakes produced by exfoliation methods. An effective option in this respect relies on the measurement of the intensity of Raman spectra, which can be used even when the flakes are encapsulated by a transparent protective layer. However, when using this methodology, special attention should be paid to the crystalline anisotropy of the examined material. Specifically, for the case of black phosphorus flakes, the absolute experimental determination of the thickness is rather difficult because the material is characterized by a low symmetry and also because the Raman tensors are complex quantities. In this work, we exploited Raman spectroscopy to measure the thickness of black phosphorous flakes using silicon as reference material for intensity calibrations. We found out that we can determine the thickness of a flake above 5 nm with an accuracy of about 20%. We tested the reproducibility of the method on two different setups, finding similar results. The method can be applied also to other van der Waals materials with a Raman band characterized by the same Raman tensor.
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Affiliation(s)
- Gabriele Faraone
- L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via Cozzi 53, I-20125, Milano, Italy. CNR-IMM, Unità di Agrate Brianza, via C. Olivetti 2, Agrate Brianza, I-20864, Italy
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48
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Avsar A, Cheon CY, Pizzochero M, Tripathi M, Ciarrocchi A, Yazyev OV, Kis A. Probing magnetism in atomically thin semiconducting PtSe 2. Nat Commun 2020; 11:4806. [PMID: 32968069 PMCID: PMC7511911 DOI: 10.1038/s41467-020-18521-6] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2020] [Accepted: 08/21/2020] [Indexed: 11/12/2022] Open
Abstract
Atomic-scale disorder in two-dimensional transition metal dichalcogenides is often accompanied by local magnetic moments, which can conceivably induce long-range magnetic ordering into intrinsically non-magnetic materials. Here, we demonstrate the signature of long-range magnetic orderings in defective mono- and bi-layer semiconducting PtSe2 by performing magnetoresistance measurements under both lateral and vertical measurement configurations. As the material is thinned down from bi- to mono-layer thickness, we observe a ferromagnetic-to-antiferromagnetic crossover, a behavior which is opposite to the one observed in the prototypical 2D magnet CrI3. Our first-principles calculations, supported by aberration-corrected transmission electron microscopy imaging of point defects, associate this transition to the interplay between the defect-induced magnetism and the interlayer interactions in PtSe2. Furthermore, we show that graphene can be effectively used to probe the magnetization of adjacent semiconducting PtSe2. Our findings in an ultimately scaled monolayer system lay the foundation for atom-by-atom engineering of magnetism in otherwise non-magnetic 2D materials. Beneficiary defects could be utilized to introduce magnetism into materials that are not intrinsically magnetic. Here, the authors demonstrate long range magnetic order in the air-stable, defective Platinum Diselenide in the ultimate limit of thickness by using proximitized graphene as a probe.
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Affiliation(s)
- Ahmet Avsar
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015, Switzerland. .,Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH, 1015, Switzerland.
| | - Cheol-Yeon Cheon
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015, Switzerland.,Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH, 1015, Switzerland
| | - Michele Pizzochero
- Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH, 1015, Switzerland
| | - Mukesh Tripathi
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015, Switzerland.,Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH, 1015, Switzerland
| | - Alberto Ciarrocchi
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015, Switzerland.,Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH, 1015, Switzerland
| | - Oleg V Yazyev
- Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH, 1015, Switzerland
| | - Andras Kis
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015, Switzerland. .,Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH, 1015, Switzerland.
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49
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Hamer MJ, Hopkinson DG, Clark N, Zhou M, Wang W, Zou Y, Kelly DJ, Bointon TH, Haigh SJ, Gorbachev RV. Atomic Resolution Imaging of CrBr 3 Using Adhesion-Enhanced Grids. Nano Lett 2020; 20:6582-6589. [PMID: 32786938 DOI: 10.1021/acs.nanolett.0c02346] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Suspended specimens of 2D crystals and their heterostructures are required for a range of studies including transmission electron microscopy (TEM), optical transmission experiments, and nanomechanical testing. However, investigating the properties of laterally small 2D crystal specimens, including twisted bilayers and air-sensitive materials, has been held back by the difficulty of fabricating the necessary clean suspended samples. Here we present a scalable solution that allows clean free-standing specimens to be realized with 100% yield by dry-stamping atomically thin 2D stacks onto a specially developed adhesion-enhanced support grid. Using this new capability, we demonstrate atomic resolution imaging of defect structures in atomically thin CrBr3, a novel magnetic material that degrades in ambient conditions.
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Affiliation(s)
- Matthew J Hamer
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - David G Hopkinson
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Department of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Nick Clark
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Department of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Mingwei Zhou
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Wendong Wang
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Yichao Zou
- Department of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Daniel J Kelly
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Department of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Thomas H Bointon
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Sarah J Haigh
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Department of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Roman V Gorbachev
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Henry Royce Institute, Oxford Road, Manchester M13 9PL, United Kingdom
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50
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Yokoi M, Fujiwara S, Kawamura T, Arakawa T, Aoyama K, Fukuyama H, Kobayashi K, Niimi Y. Negative resistance state in superconducting NbSe 2 induced by surface acoustic waves. Sci Adv 2020; 6:6/34/eaba1377. [PMID: 32937360 PMCID: PMC7442479 DOI: 10.1126/sciadv.aba1377] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/07/2019] [Accepted: 07/09/2020] [Indexed: 06/11/2023]
Abstract
We report a negative resistance, namely, a voltage drop along the opposite direction of a current flow, in the superconducting gap of NbSe2 thin films under the irradiation of surface acoustic waves (SAWs). The amplitude of the negative resistance becomes larger by increasing the SAW power and decreasing temperature. As one possible scenario, we propose that soliton-antisoliton pairs in the charge density wave of NbSe2 modulated by the SAW serve as a time-dependent capacitance in the superconducting state, leading to the dc negative resistance. The present experimental result would provide a previously unexplored way to examine nonequilibrium manipulation of the superconductivity.
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Affiliation(s)
- Masahiko Yokoi
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
| | - Satoshi Fujiwara
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
| | - Tomoya Kawamura
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
| | - Tomonori Arakawa
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
- Center for Spin Research Network, Osaka University, Toyonaka 560-8531, Japan
| | - Kazushi Aoyama
- Department of Earth and Space Science, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
| | - Hiroshi Fukuyama
- Department of Physics, Graduate School of Science, The University of Tokyo, Tokyo 113-0033, Japan
- Cryogenic Research Center, The University of Tokyo, Tokyo 113-0032, Japan
| | - Kensuke Kobayashi
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
- Department of Physics, Graduate School of Science, The University of Tokyo, Tokyo 113-0033, Japan
- Institute for Physics of Intelligence, Graduate School of Science, The University of Tokyo, Tokyo 113-0033, Japan
| | - Yasuhiro Niimi
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan.
- Center for Spin Research Network, Osaka University, Toyonaka 560-8531, Japan
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