Thienoisoindigo-Based Conjugated Polymers Synthesized by Direct Arylation Polycondensation

A series of thienoisoindigo (TIG)-based conjugated polymers (CPs) with high molecular weights are synthesized by direct arylation polycondensation (DArP) by using TIG derivatives as CBr monomer and multi-halogenated thiophene derivatives, i.e., (E)-1,2-bis(3,4-difluorothien-2-yl)ethene (4FTVT), (E)-1,2-bis(3,4-dichlorothien-2-yl)ethene (4ClTVT), 3,3',4,4'-tetrafluoro-2,2'-bithiophene (4FBT), and 3,3',4,4'-tetrachloro-2,2'-bithiophene (4ClBT), as CH monomers. Density functional theory (DFT) calculations reveal the high selectivity between α-CH bonds in 4FTVT, 4ClTVT, 4FBT, and 4ClBT and β-CH bonds in TIG CBr monomer. All four resulting CPs exhibit low optical bandgaps of ca. 1.20 eV and ambipolar transport characteristics with both electron and hole mobility above 0.1 cm2  V-1  s-1 as elaborated with organic thin-film transistors (OTFTs). The polymer TIG-4FTVT delivers the best device performance. With this polymer, n-channel OTFTs with electron mobility up to 1.67 cm2  V-1  s-1 and p-channel OTFTs with hole mobility up to 0.62 cm2  V-1  s-1 are fabricated by modifying source/drain electrodes with polyethylenimine ethoxylated (PEIE) and MoO3 , respectively, to selectively inject electrons and holes.

Conjugated Polymers from Direct Arylation Polycondensation of 3,4-Difluorothiophene-Substituted Aryls: Synthesis and Properties

3,4-Difluorothiophene-substituted aryls, i.e., 1,4-bis(3,4-difluorothiophen-2-yl)-benzene (Ph-2FTh), 1,4-bis(3,4-difluorothiophen-2-yl)-2,5-difluorobenzene (2FPh-2FTh), and 4,7-bis(3,4-difluorothiophen-2-yl)-2,1,3-benzothiadiazole (BTz-2FTh), are synthesized as C─H monomers for the synthesis of conjugated polymers (CPs) via direct arylation polycondensation (DArP) with diketopyrrolopyrrole (DPP) and isoindigo (IID) derivatives as C─Br monomers. The Gibbs free energies of activation for direct arylation (ΔG298 K , kcal mol-1 ) for α─C─H bonds of thiophene moieties as calculated by density functional theory (DFT) are 14.3, 16.5, and 16.4 kcal mol-1 for Ph-2FTh, 2FPh-2FTh and BTz-2FTh, respectively, meaning that inserting an electron-deficient unit in 3,3',4,4'-tetrafluoro-2,2'-bithiophene (4FBT, ΔG298K : 14.6 kcal mol-1 ) may cause a reactivity decrease of the C─H monomers. Photophysical and semiconducting properties of the resulting six CPs (i.e., DPP-Ph, DPP-2FPh, DPP-BTz, 2FIID-Ph, 2FIID-2FPh, and 2FIID-BTz) are characterized in detail. DPP-based CPs show ambipolar transport properties while IID-based ones exhibited n-type behavior owing to the deeper frontier molecular orbital energy levels of IID-based CPs. With source/drain electrodes modified with polyethylenimine ethoxylated, n-channel organic thin-film transistors with maximum electron mobility of 0.40, 0.54, 0.29, 0.05, 0.16, and 0.01 cm2 V-1 s-1 for DPP-Ph, DPP-2FPh, DPP-BTz, 2FIID-Ph, 2FIID-2FPh, and 2FIID-BTz, respectively, are fabricated. DPP-2FPh exhibits the best device performance due to the good film morphology and the highest intermolecular packing order.

Detection of Water Contaminants by Organic Transistors as Gas Sensors in a Bottom-Gate/Bottom-Contact Cross-Linked Structure

Detecting volatile organic compounds is a fundamental step in water quality analysis. Methylisoborneol (MIB) provides a lousy odor to water, whereas geosmin (GEO) is responsible for its sour taste. A widely-used technique for their detection is gas-phase chromatography. On the other hand, an electronic nose from organic thin-film transistors is a cheaper and faster alternative. Poly(2,5-bis(3-tetradecyl-thiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) features semiconducting properties suitable for organic electronics. However, in order to expose the active layer in a bottom-gate transistor structure with photolithographically patterned electrodes, a cross-linked dielectric such as poly(4-vinyl phenol) (PVP) is necessary. In this work, the cross-linking was demonstrated using FTIR and Raman spectroscopies, as well as high-k capacitors with a dielectric constant of 5.3. The presence of enhanced crystallinity with terrace formation in the semiconducting film was confirmed with UV-visible spectrophotometry, atomic force microscopy, and X-ray diffraction. Finally, for the first time, a PBTTT-C14 transistor on cross-linked PVP was shown to respond to isoborneol with a sensitivity of up to 6% change in mobility per ppm. Due to its similarity to MIB, a system comprising these sensors must be investigated in the future as a tool for sanitation companies in real-time water quality monitoring.

Organic thin-film transistors and related devices in life and health monitoring

The early determination of disease-related biomarkers can significantly improve the survival rate of patients. Thus, a series of explorations for new diagnosis technologies, such as optical and electrochemical methods, have been devoted to life and health monitoring. Organic thin-film transistor (OTFT), as a state-of-the-art nano-sensing technology, has attracted significant attention from construction to application owing to the merits of being label-free, low-cost, facial, and rapid detection with multi-parameter responses. Nevertheless, interference from non-specific adsorption is inevitable in complex biological samples such as body liquid and exhaled gas, so the reliability and accuracy of the biosensor need to be further improved while ensuring sensitivity, selectivity, and stability. Herein, we overviewed the composition, mechanism, and construction strategies of OTFTs for the practical determination of disease-related biomarkers in both body fluids and exhaled gas. The results show that the realization of bio-inspired applications will come true with the rapid development of high-effective OTFTs and related devices.

Electronic Supplementary Material

Supplementary material is available in the online version of this article at 10.1007/s12274-023-5606-1.

Modulating the Alkylation Position on Terminal Thiophene Ring of Naphtho[2,3-b:6,7-b'] Bithieno[2,3-d] Thiophene (NBTT) for High-Performance Organic Optoelectronic Devices

Several thiophene terminated thienoacenes with high mobilities in organic thin-film transistors (OTFTs) have been reported; however, the structure-property relationship of thiophene terminated thienoacenes was unclear, especially the impact of α or β position substitution of terminal thiophene ring on molecular packing and physicochemical properties. Here, we report the synthesis and characterization of a six-ring-fused naphtho[2,3-b:6,7-b'] bithieno[2,3-d] thiophene (NBTT) and its derivatives 2,8-dioctyl-naphtho[2,3-b:6,7-b'] bithieno [2,3-d] thiophene (2,8-C8NBTT) and 3,9-dioctyl-naphtho[2,3-b:6,7-b'] bithieno [2,3-d] thiophene (3,9-C8NBTT). It is found that the alkylation on terminal thiophene ring can effectively tune the molecular stacking from a cofacial herringbone stacking mode (NBTT) to layer-by-layer packing (2,8-C8NBTT and 3,9-C8NBTT). Impressively, a hopping to "band-like" charge transport mechanism evolution of vacuum deposited films is realized by modulating the alkylation position on the terminal thiophene rings. As a result, the OTFTs based on 2,8-C8NBTT characterized by a "band-like" transport presents the highest mobility of 3.58 cm² V^-1 s^-1 together with a remarkably high current on/off ratio around 10⁹. Furthermore, organic phototransistors (OPTs) based on 2,8-C8NBTT thin film also exhibits higher photosensitivity (P) of 2.0 × 10⁸, photoresponsivity (R) of 3.3 × 10³ A W^-1, and detectivity (D*) of 1.3 × 10¹⁶ Jones than those based on NBTT and 3,9-C8NBTT.

Isomerically Pure Oxindole-Terminated Quinoids for n-Type Organic Thin-Film Transistors Enabled by the Chlorination of Quinoidal Core

Quinoidal compounds have great potential utility as high-performance organic semiconducting materials because of their rigid planar structures and extended π-conjugation. However, the existence of E and Z isomers adversely affects the charge-transport properties of quinoidal compounds. In this study, three isomerically pure oxindole-terminated quinoids were developed by introducing chlorine atoms in the quinoidal core. The synthesized quinoids were confirmed to have a Z,Z configuration by means of ¹ H NMR spectroscopy, density functional theory calculations, and single-crystal X-ray analysis. Importantly, the strategy of chlorination allowed to maintain low-lying frontier molecular orbital energy levels and ensure favorable intermolecular packing. Consequently, all three quinoidal compounds showed n-type transport characteristics in organic thin-film transistors, with electron mobilities up to 0.35 cm²  V^-1  s^-1 , which is the highest value reported to date for oxindole-terminated quinoids. Our study can provide new guidelines for the design of isomerically pure quinoids with high electron mobilities.

Optimization of Alkyl Side Chain Length in Polyimide for Gate Dielectrics to Achieve High Mobility and Outstanding Operational Stability in Organic Transistors

Alkyl chain modification strategies in both organic semiconductors and inorganic dielectrics play a crucial role in improving the performance of organic thin-film transistors (OTFTs). Polyimide (PI) and its derivatives have received extensive attention as dielectrics for application in OTFTs because of flexibility, high-temperature resistance, and low cost. However, low-temperature solution processing PI-based gate dielectric for flexible OTFTs with high mobility, low operating voltage, and high operational stability remains an enormous challenge. Furthermore, even though di-n-decyldinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C₁₀-DNTT) is known to have very high mobility as an air-stable and high-performance organic semiconductor, the C₁₀-DNTT-based TFTs on the PI gate dielectrics still showed relatively low mobility. Here, inspired by alkyl side chain engineering, we design and synthesize a series of PI materials with different alkyl side chain lengths and systematically investigate the PI surface properties and the evolution of organic semiconductor morphology deposited on PI surfaces during the variation of alkyl side chain lengths. It is found that the alkyl side chain length has a critical influence on the PI surface properties, as well as the grain size and molecular orientation of semiconductors. Good field-effect characteristics are obtained with high mobilities (up to 1.05 and 5.22 cm²/Vs, which are some of the best values reported to date), relatively low operating voltage, hysteresis-free behavior, and high operational stability in OTFTs. These results suggest that the strategy of optimizing alkyl side-chain lengths opens up a new research avenue for tuning semiconductor growth to enable high mobility and outstanding operational stability of PI-based OTFTs.

n-Type Polymer Semiconductors Based on Dithienylpyrazinediimide

The development of n-type organic semiconductors critically relies on the design and synthesis of highly electron-deficient building blocks with good solubility and small steric hindrance. We report here a strongly electron-deficient dithienylpyrazinediimide (TPDI) and its n-type semiconducting polymers. The pyrazine substitution leads to the resulting polymers with much lower-lying lowest unoccupied molecular orbital (LUMO) levels and improved backbone planarity compared to the reported dithienylbenzodiimide (TBDI)- and fluorinated dithienylbenzodiimide (TFBDI)-based polymer analogues, thus yielding n-type transport character with an electron mobility up to 0.44 cm² V^-1 s^-1 in organic thin-film transistors. These results demonstrate that dithienylpyrazinediimide is a highly promising electron-deficient building block for constructing high-performance n-type polymers and the incorporation of pyrazine into imide-functionalized (hetero)arenes is an effective strategy to develop n-type polymers with deep-lying frontier molecular orbital (FMO) levels for organic optoelectronic devices.

Fine-Tuning the Performance of Ultraflexible Organic Complementary Circuits on a Single Substrate via a Nanoscale Interfacial Photochemical Reaction

Flexible electronics has paved the way toward the development of next-generation wearable and implantable healthcare devices, including multimodal sensors. Integrating flexible circuits with transducers on a single substrate is desirable for processing vital signals. However, the trade-off between low power consumption and high operating speed is a major bottleneck. Organic thin-film transistors (OTFTs) are suitable for developing flexible circuits owing to their intrinsic flexibility and compatibility with the printing process. We used a photoreactive insulating polymer poly((±)endo,exo-bicyclo[2.2.1]hept-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) to modulate the power consumption and operating speed of ultraflexible organic circuits fabricated on a single substrate. The turn-on voltage (V _on) of the p- and n-type OTFTs was controlled through a nanoscale interfacial photochemical reaction. The time-of-flight secondary ion mass spectrometry revealed the preferential occurrence of the PNDPE photochemical reaction in the vicinity of the semiconductor-dielectric interface. The power consumption and operating speed of the ultraflexible complementary inverters were tuned by a factor of 6 and 4, respectively. The minimum static power consumption was 30 ± 9 pW at transient and 4 ± 1 pW at standby. Furthermore, within the tuning range of the operating speed and at a supply voltage above 2.5 V, the minimum stage delay time was of the order of hundreds of microseconds. We demonstrated electromyogram measurements to emphasize the advantage of the nanoscale interfacial photochemical reaction. Our study suggests that a nanoscale interfacial photochemical reaction can be employed to develop imperceptible and wearable multimodal sensors with organic signal processing circuits that exhibit low power consumption.

High-Frequency Operation of Vertical Organic Field-Effect Transistors

The high-frequency and low-voltage operation of organic thin-film transistors (OTFTs) is a key requirement for the commercial success of flexible electronics. Significant progress has been achieved in this regard by several research groups highlighting the potential of OTFTs to operate at several tens or even above 100 MHz. However, technology maturity, including scalability, integrability, and device reliability, is another crucial point for the semiconductor industry to bring OTFT-based flexible electronics into mass production. These requirements are often not met by high-frequency OTFTs reported in the literature as unconventional processes, such as shadow-mask patterning or alignment with unrealistic tolerances for production, are used. Here, ultra-short channel vertical organic field-effect transistors (VOFETs) with a unity current gain cut-off frequency (f_T ) up to 43.2 MHz (or 4.4 MHz V^-1 ) operating below 10 V are shown. Using state-of-the-art manufacturing techniques such as photolithography with reliable fabrication procedures, the integration of such devices down to the size of only 12 × 6 µm2 is shown, which is important for the adaption of this technology in high-density circuits (e.g., display driving). The intrinsic channel transconductance is analyzed and demonstrates that the frequencies up to 430 MHz can be reached if the parasitic electrode overlap is minimized.

Unraveling the Molar Mass Dependence of Shearing-Induced Aggregation Structure of a High-Mobility Polymer Semiconductor

Aggregation-structure formation of conjugated polymers is a fundamental problem in the field of organic electronics and remains poorly understood. Herein, the molar mass dependence of the aggregation structure of a high-mobility conjugated copolymer (TDPP-Se) comprising thiophene-flanked diketopyrrolopyrrole and selenophene is thoroughly shown. Five batches of TDPP-Se are prepared with the number-average molecular weights (M_n ) varied greatly from 21 to 135 kg mol^-1 . Small-angle neutron scattering and transmission electron microscopy are combined to probe the solution structure of these polymers, consistently using a deuterated solvent. All the polymers adopt 1D rod-like aggregation structures and the radius of the 1D rods is not sensitive to the M_n , while the length increases monotonically with M_n . By utilizing the ordered packing of the aggregated structure in solution, a highly aligned and ordered film is prepared and, thereafter, a reliable hole mobility of 13.8 cm² V^-1 s^-1 is realized in organic thin-film transistors with the moderate M_n batch via bar coating. The hole mobility is among the highest values reported for diketopyrrolopyrrole-based polymers. This work paves the way to visualize the real aggregated structure of polymer semiconductors in solution and sheds light on the microstructure control of high-performance electronic devices.

Y6 Organic Thin-Film Transistors with Electron Mobilities of 2.4 cm2 V-1 s-1 via Microstructural Tuning

There is a growing demand to attain organic materials with high electron mobility, μe , as current reliable reported values are significantly lower than those exhibited by their hole mobility counterparts. Here, it is shown that a well-known nonfullerene-acceptor commonly used in organic solar cells, that is, BTP-4F (aka Y6), enables solution-processed organic thin-film transistors (OTFT) with a μe as high as 2.4 cm2  V-1  s-1 . This value is comparable to those of state-of-the-art n-type OTFTs, opening up a plethora of new possibilities for this class of materials in the field of organic electronics. Such efficient charge transport is linked to a readily achievable highly ordered crystalline phase, whose peculiar structural properties are thoroughly discussed. This work proves that structurally ordered nonfullerene acceptors can exhibit intrinsically high mobility and introduces a new approach in the quest of high μe organic materials, as well as new guidelines for future materials design.

Electrohydrodynamic-Jet-Printed Cinnamate-Fluorinated Cross-Linked Polymeric Dielectrics for Flexible and Electrically Stable Operating Organic Thin-Film Transistors and Integrated Devices

Herein, printable polymer series containing different portions of cinnamate and perfluorinated phenyl functionalities, namely, polyperfluorostyrene-co-poly(vinylbenzyl cinnamates) (PFS-co-PVBCi (x:y)) copolymers, were synthesized and applied as gate dielectrics for organic thin-film transistors (OTFTs). The polymeric dielectrics were successfully printed via electrostatic force-assisted dispensing mode of electrohydrodynamic jet printing. The dielectric characteristics of the printed polymers, such as surface energy, dielectric constant, leakage current, atomic depth profiles, and deposited semiconducting layer characteristics, were clearly identified. In particular, the difference in driving stability of OTFTs according to the type of polymer was analyzed in detail and a possible mechanism was proposed. Results suggested that PFS-co-PVBCi (3:7) led to optimized consequences, yielding an almost negligible V_th shift under continuous bias stress. Through this, we successfully implemented flexible OTFT and logic devices using printed PFS-co-PVBCi (3:7) dielectrics with stable operation properties. Therefore, we believe that this study will facilitate the printing and synthesis of polymer dielectrics to produce printed and flexible OTFTs.

Dual Surface Architectonics for Directed Self-Assembly of Ultrahigh-Resolution Electronics

The directed self-assembly of electronic circuits using functional metallic inks has attracted intensive attention because of its high compatibility with extensive applications ranging from soft printed circuits to wearable devices. However, the typical resolution of conventional self-assembly technologies is not sufficient for practical applications in the rapidly evolving additively manufactured electronics (AMEs) market. Herein, an ultrahigh-resolution self-assembly strategy is reported based on a dual-surface-architectonics (DSA) process. Inspired by the Tokay gecko, the approach is to endow submicrometer-scale surface regions with strong adhesion force toward metallic inks via a series of photoirradiation and chemical polarization treatments. The prepared DSA surface enables the directed self-assembly of electronic circuits with unprecedented 600 nm resolution, suppresses the coffee-ring effect, and results in a reliable conductivity of 14.1 ± 0.6 µΩ cm. Furthermore, the DSA process enables the layer-by-layer fabrication of fully printed organic thin-film transistors with a short channel length of 1 µm, which results in a large on-off ratio of 10⁶ and a high field-effect mobility of 0.5 cm²  V^-1  s^-1 .

Controlled Fabrication and Characterization of Coronene Diimide-Based Insoluble Thin Films Produced by Photoinduced Cyclization

An insoluble thin film of a coronene diimide (CDI) derivative was fabricated from a soluble precursor of perylene diimide (PDI) by photoirradiation. We prepared a 1,7-diarylated PDI (TP-PDI) that can be converted into a coronene diimide (TP-CDI) derivative via a Scholl-type photocyclization reaction. This reaction was accompanied by structural changes from a twisted structure to a π-extended planar molecule. It was found that this photoconversion reaction occurs for both solution-based and thin-film-based reactants investigated by the changes of UV-vis absorption spectra and ¹ H NMR spectra. The photocyclization reactions were found to proceed smoothly in polar solvents. In the thin-film state, the solvent vapor annealing method is a key process for achieving photoconversion reaction. Additionally, the fabrication of multi-layered thin films was achieved without undesirable dissolution of the underlying layers because of different solubilities of TP-PDI and TP-CDI.

Gold nanorods doping induced performance improvement of room temperature OTFT NO2sensors

Solution-processed organic thin-film transistors (OTFTs) are regarded as the promising candidates for low-cost gas sensors due to their advantages of high throughput, large-area and sensitive to various gas analytes. Microstructure control of organic active layers in OTFTs is an effective route to improve the sensing performance. In this work, we report a simple method to modify the morphology of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) thin films via doping gold nanorods (Au NRs) for enhancing the performance of the corresponding OTFT sensors for nitrogen dioxide (NO₂) detection. With the optimized doping ratio of Au nanorods, the TIPS-pentacene OTFT snesors not only exhibit a 3-fold increase in mobility, but also obtain a high sensitivity of 70% to 18 ppm NO₂with a detection limit of 270 ppb. The microstructures and morphologies of the modified TIPS-pentacene thin film characterized by atomic force microscopy and field scanning electron microscope. The experimental results indicate that the proper addition of Au NRs could effectively regulate the grain size of TIPS-pentacene, and therein control the density of grain boundaries during the crystallization, which is essential for the high-performance gas sensors.

Molecular Orientation Control of Liquid Crystal Organic Semiconductor for High-Performance Organic Field-Effect Transistors

The control of molecular orientation and ordering of liquid crystal (LC) organic semiconductor (OSC) for high-performance and thermally stable organic thin-film transistors is investigated. A liquid crystalline molecule, 2-(4-dodecyl thiophenyl)[1]dibenzothiopheno[6,5-b:6',5'-f]-thieno[3,2-b]thiophene (C12-Th-DBTTT) is synthesized, showing the highly ordered smectic X (SmX) phase, demonstrating molecular reorganization via thermal annealing. The resulting thermally evaporated polycrystalline film and solution-sheared thin film show high charge carrier mobilities of 9.08 and 27.34 cm² V^-1 s^-1, respectively. Atomic force microscopy and grazing-incidence X-ray diffraction analyses prove that the random SmA₁-like structure (smectic monolayer) is reorganized to the highly ordered SmA₂-like structure (smectic bilayer) of C12-Ph-DBTTT at the crystal-SmX transition temperature region. Because of the strong intermolecular interactions between rigid DBTTT cores, the thin film devices of C12-Th-DBTTT show excellent thermal stability up to 300 °C, indicating that LC characterization of conventional OSC materials can obtain high electrical performance as well as superior thermal durability.

Blurred Electrode for Low Contact Resistance in Coplanar Organic Transistors

Inefficient charge injection and transport across the electrode/semiconductor contact edge severely limits the device performance of coplanar organic thin-film transistors (OTFTs). To date, various approaches have been implemented to address the adverse contact problems of coplanar OTFTs. However, these approaches mainly focused on reducing the injection resistance and failed to effectively lower the access resistance. Here, we demonstrate a facile strategy by utilizing the blurring effect during the deposition of metal electrodes, to significantly reduce the access resistance. We find that the transition region formed by the blurring behavior can continuously tune the molecular packing and thin-film growth of organic semiconductors across the contact edge, as well as provide continuously distributed gap states for carrier tunnelling. Based on this versatile strategy, the fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) coplanar OTFT shows a high field-effect mobility of 6.08 cm² V^-1 s^-1 and a low contact resistance of 2.32 kΩ cm, comparable to the staggered OTFTs fabricated simultaneously. Our work addresses the crucial impediments for further reducing the contact resistance in coplanar OTFTs, which represents a significant step of contact injection engineering in organic devices.

Thin-Film Engineering of Solution-Processable n-Type Silicon Phthalocyanines for Organic Thin-Film Transistors

Metal and metalloid phthalocyanines are an abundant and established class of materials widely used in the dye and pigment industry as well as in commercial photoreceptors. Silicon phthalocyanines (SiPcs) are among the highest-performing n-type semiconductor materials in this family when used in organic thin-film transistors (OTFTs) as their performance and solid-state arrangement are often increased through axial substitution. Herein, we study eight axially substituted SiPcs and their integration into solution-processed n-type OTFTs. Electrical characterization of the OTFTs, combined with atomic force microscopy (AFM), determined that the length of the alkyl chain affects device performance and thin-film morphology. The effects of high-temperature annealing and spin coating time on film formation, two key processing steps for fabrication of OTFTs, were investigated by grazing-incidence wide-angle X-ray scattering (GIWAXS) and X-ray diffraction (XRD) to elucidate the relationship between thin-film microstructure and device performance. Thermal annealing was shown to change both film crystallinity and SiPc molecular orientation relative to the substrate surface. Spin time affected film crystallinity, morphology, and interplanar d-spacing, thus ultimately modifying device performance. Of the eight materials studied, bis(tri-n-butylsilyl oxide) SiPc exhibited the greatest electron field-effect mobility (0.028 cm² V^-1 s^-1, a threshold voltage of 17.6 V) of all reported solution-processed SiPc derivatives.

Grain Boundary Control of Organic Semiconductors via Solvent Vapor Annealing for High-Sensitivity NO2 Detection

The microstructure of the organic semiconductor (OSC) active layer is one of the crucial topics to improve the sensing performance of gas sensors. Herein, we introduce a simple solvent vapor annealing (SVA) process to control 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) OSC films morphology and thus yields high-sensitivity nitrogen organic thin-film transistor (OTFT)-based nitrogen dioxide (NO₂) sensors. Compared to pristine devices, the toluene SVA-treated devices exhibit an order of magnitude responsivity enhancement to 10 ppm NO₂, further with a limit of detection of 148 ppb. Systematic studies on the microstructure of the TIPS-pentacene films reveal the large density grain boundaries formed by the SVA process, improving the capability for the adsorption of gas molecules, thus causing high-sensitivity to NO₂. This simple SVA processing strategy provides an effective and reliable access for realizing high-sensitivity OTFT NO₂ sensors.

Organic Thin-Film Transistors as Gas Sensors: A Review

Organic thin-film transistors (OTFTs) are miniaturized devices based upon the electronic responses of organic semiconductors. In comparison to their conventional inorganic counterparts, organic semiconductors are cheaper, can undergo reversible doping processes and may have electronic properties chiefly modulated by molecular engineering approaches. More recently, OTFTs have been designed as gas sensor devices, displaying remarkable performance for the detection of important target analytes, such as ammonia, nitrogen dioxide, hydrogen sulfide and volatile organic compounds (VOCs). The present manuscript provides a comprehensive review on the working principle of OTFTs for gas sensing, with concise descriptions of devices’ architectures and parameter extraction based upon a constant charge carrier mobility model. Then, it moves on with methods of device fabrication and physicochemical descriptions of the main organic semiconductors recently applied to gas sensors (i.e., since 2015 but emphasizing even more recent results). Finally, it describes the achievements of OTFTs in the detection of important gas pollutants alongside an outlook toward the future of this exciting technology.

Engineering Cannabinoid Sensors through Solution-Based Screening of Phthalocyanines

Organic thin-film transistors (OTFTs) have shown promise for a range of sensing applications, with phthalocyanine-based OTFTs demonstrated as sensors for atmospheric parameters, volatile gases, and small organic molecules including cannabinoids. However, the process of fabricating, testing, and optimizing OTFTs in a laboratory setting requires highly specialized equipment, materials, and expertise. To determine if sensor development can be expedited and thus reduce manufacturing burden, spectroelectrochemistry is applied to rapidly screen for molecular interactions between metal-free phthalocyanines and a variety of metal phthalocyanines (MPcs) and the cannabinoids Δ⁹-tetrahydrocannabinol (THC) or cannabidiol (CBD), with and without a cannabinoid-sensitive chromophore (Fast Blue BB). Spectral analyses are corroborated by 2D-NMR and related to measured OTFT performance. Spectroelectrochemical changes to the Q band region of the phthalocyanine spectra in the presence of analytes can be used to predict the response of OTFTs. Thus, with spectroelectrochemistry, a range of potential materials for OTFT small organic molecule-sensing applications can be quickly analyzed, and phthalocyanines with a preferred response can be selected.

Facile Approach to Fabricating Stretchable Organic Transistors with Laser-Patterned Ag Nanowire Electrodes

Stretchable electronics are poised to revolutionize personal healthcare and robotics, where they enable distributed and conformal sensors. Transistors are fundamental building blocks of electronics, and there is a need to produce stretchable transistors using low-cost and scalable fabrication techniques. Here, we introduce a facile fabrication approach using laser patterning and transfer printing to achieve high-performance, solution-processed intrinsically stretchable organic thin-film transistors (OTFTs). The device consists of Ag nanowire (NW) electrodes, where the source and drain electrodes are patterned using laser ablation. The Ag NWs are then partially embedded in a poly(dimethylsiloxane) (PDMS) matrix. The electrodes are combined with a PDMS dielectric and polymer semiconductor, where the layers are individually transfer printed to complete the OTFT. Two polymer semiconductors, DPP-DTT and DPP-4T, are considered and show stable operation under the cyclic strain of 20 and 40%, respectively. The OTFTs maintain electrical performance by adopting a buckled structure after the first stretch-release cycle. The conformability and stretchability of the OTFT is also demonstrated by operating the transistor while adhered to a finger being flexed. The ability to pattern highly conductive Ag NW networks using laser ablation to pattern electrodes as well as interconnects provides a simple strategy to produce complex stretchable OTFT-based circuits.

Synthesis of Poly(bisisoindigo) Using a Metal-Free Aldol Polymerization for Thin-Film Transistor Applications

Typical syntheses of conjugated polymers rely heavily on organometallic reagents and metal-catalyzed cross-coupling reactions. Here, we show that an environmentally benign aldol polymerization can be used to synthesize poly(bisisoindigo), an analog of polyisoindigo with a ring-fused structural repeat unit. Owing to its extended conjugation length, poly(bisisoindigo) absorbs across the UV/vis/NIR spectrum, with an absorption tail that reaches 1000 nm. Due to the four electron-deficient lactam units on each repeat unit, poly(bisoindigo) possesses a low-lying LUMO, which lies at -3.94 eV relative to vacuum. Incorporation of the ring-fused monomer unit also lowered the overall torsional strain in the polymer backbone (relative to polyisoindigo), and the polymer was successfully used in prototype unipolar n-channel organic thin-film transistors.

Fused Bithiophene Imide Oligomer and Diketopyrrolopyrrole Copolymers for n-Type Thin-Film Transistors

Diketopyrrolopyrrole (DPP)-based copolymers have received considerable attention as promising semiconducting materials for high-performance organic thin-film transistors (OTFTs). However, these polymers typically exhibit p-type or ambipolar charge-transporting characteristics in OTFTs due to their high-lying highest occupied molecular orbital (HOMO) energy levels. In this work, a new series of DPP-based n-type polymers have been developed by incorporating fused bithiophene imide oligomers (BTIn) into DPP polymers. The resulting copolymers BTIn-DPP show narrow band gaps as low as 1.27 eV and gradually down-shifted frontier molecular orbital energy levels upon the increment of imide group number. Benefiting from the coplanar backbone conformation, well-delocalized π-system, and favorable polymer chain packing, the optimal polymer in the series shows promising n-type charge transport with an electron mobility up to 0.48 cm² V^-1 s^-1 in OTFTs, which is among the highest values for the DPP-based n-type polymers reported to date. The results demonstrate that incorporating fused bithiophene imide oligomers into polymers can serve as a promising strategy for constructing high-performance n-type polymeric semiconductors.

Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers

In this study, ultralow 1/f noise organic thin-film transistors (OTFTs) based on parylene gate dielectrics modified with triptycene (Trip) modifiers were fabricated. The fabricated OTFTs showed the lowest 1/f noise level among those of previously reported OTFTs. It is well known that 1/f noise causes degradation of signal integrity in analog and digital circuits. However, conventional OTFTs still possess high 1/f noise levels, and the factors that strongly affect 1/f noise are still ambiguous. In this work, the effect of gate dielectric surface on 1/f noise was investigated. First, by comparing OTFTs composed of various channel lengths, we revealed that contact resistance did not affect 1/f noise. Second, we compared parylene OTFTs with and without a self-assembled Trip modifier layer in terms of 1/f noise and trap density of states (Trap DOS). The experiments revealed that a specific Trip modifier layer suppresses the shallow Trap DOS in the OTFTs, leading to a low 1/f noise. Moreover, the 1/f noise level and Trap DOS of various kinds of OTFTs were comprehensively compared, which highlighted that the 1/f noise of OTFTs strongly depends on the gate dielectric surface. Finally, detailed analysis of the gate dielectric interface led us to conclude that the disorder of gate dielectrics and the crystalline quality of semiconductor films are related to shallow Trap DOS, which correlates with 1/f noise.

On-the-Spot Detection and Speciation of Cannabinoids Using Organic Thin-Film Transistors

Quality control is imperative for Cannabis since the primary cannabinoids, Δ⁹-tetrahydrocannabinol (THC) and cannabidiol (CBD), elicit very different pharmacological effects. THC/CBD ratios are currently determined by techniques not readily accessible by consumers or dispensaries and which are impractical for use in the field by law-enforcement agencies. CuPc- and F₁₆-CuPc-based organic thin-film transistors have been combined with a cannabinoid-sensitive chromophore for the detection and differentiation of THC and CBD. The combined use of these well-characterized and inexpensive p- and n-type materials afforded the determination of the CBD/THC ratio from rapid plant extracts, with results indistinguishable from high-pressure liquid chromatography. Analysis of the prepyrolyzed sample accurately predicted postpyrolysis THC/CBD, which ultimately influences the psychotropic and medicinal effects of the specific plant. The devices were also capable of vapor-phase sensing, producing a unique electrical output for THC and CBD relative to other potentially interfering vaporized organic products. The analysis of complex medicinal plant extracts and vapors, normally reserved for advanced analytical infrastructure, can be achieved with ease, at low cost, and on the spot, using organic thin-film transistors.

Fluorine-Substituted Dithienylbenzodiimide-Based n-Type Polymer Semiconductors for Organic Thin-Film Transistors

Imide functionalization is one of the most effective approaches to develop electron-deficient building blocks for constructing n-type organic semiconductors. Driven by the attractive properties of imide-functionalized dithienylbenzodiimide (TBDI) and the promising device performance of TBDI-based polymers, a novel acceptor with increased electron affinity, fluorinated dithienylbenzodiimide (TFBDI), was designed with the hydrogen replaced by fluorine on the benzene core, and the synthetic challenges associated with this highly electron-deficient fluorinated imide building block are successfully overcome. TFBDI showed suppressed frontier molecular orbital energy levels as compared with TBDI. Copolymerizing this new electron-withdrawing TBDI with various donor co-units afforded a series of n-type polymer semiconductors TFBDI-T, TFBDI-Se, and TFBDI-BSe. All these TFBDI-based polymers exhibited a lower-lying lowest unoccupied molecular orbital (LUMO) energy level than the polymer analogue without fluorine. When applied in organic thin-film transistors, three polymers showed unipolar electron transport with large on-current/off-current ratios (I_on/I_off) of 10⁵-10⁷. Among them, the selenophene-based polymer TFBDI-Se with the deepest-positioned LUMO and optimal chain stacking exhibited the highest electron mobility of 0.30 cm² V^-1 s^-1. This result demonstrates that the new TFBDI is a highly attractive electron-deficient unit for enabling n-type polymer semiconductors, and the fluorination of imide-functionalized arenes offers an effective approach to develop more electron-deficient building blocks in organic electronics.

Effect of Backbone Sequence of a Naphthalene Diimide-Based Copolymer on Performance in n-Type Organic Thin-Film Transistors

We report two newly synthesized naphthalene diimide (NDI)-based conjugated polymers, poly[(E)-2,7-bis(2-decyltetradecyl)benzo[lmn][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraone-vinylene-thiophene-vinylene] (PNDI-VTV) and poly[(E)-2,7-bis(2-decyltetradecyl)benzo[lmn][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraone-vinylene-selenophene-vinylene] (PNDI-VSV) with different donor units as electron-transporting organic semiconductors for organic field-effect transistors (OFETs). Furthermore, we study the effect of vinylene position on electron transport in the NDI polymers by using two similar polymers but with thiophene-vinylene-thiophene (PNDI-TVT) instead of vinylene-thiophene-vinylene or selenophene-vinylene-selenophene (PNDI-SVS) instead of vinylene-selenophene-vinylene. By incorporating vinylene between thiophene (or selenophene) units, the resulting NDI-based polymers PNDI-VTV and PNDI-VSV show larger backbone planarity than PNDI-TVT and PNDI-SVS. The polymers with a shorter acceptor monomer unit (PNDI-VTV and PNDI-VSV) show a strong face-on orientation, whereas those with a longer monomer unit (PNDI-TVT and SVS) exhibit a mixed face-on and edge-on orientation by two-dimensional grazing incidence X-ray diffraction. Optimized PNDI-VTV and PNDI-VSV OFETs exhibit electron mobilities of 0.043 and 0.7 cm²/(V·s), which is quite lower than those of PNDI-TVT and PNDI-SVS. In addition, the activation energies for electron transport of PNDI-VTV and PNDI-VSV were larger than those of PNDI-TVT and PNDI-SVS. Overall, this research provides the insight that the molecular alignment on the substrate can be controlled by the sequence of rigid acceptor monomer molecules for improving the electron transport of NDI polymers.

Achieving Ultralow Turn-On Voltages in Organic Thin-Film Transistors: Investigating Fluoroalkylphosphonic Acid Self-Assembled Monolayer Hybrid Dielectrics

The properties of organic thin-film transistors (TFTs) and thus their ability to address specific circuit design requirements depend greatly on the choice of the materials, particularly the organic semiconductor and the gate dielectric. For a particular organic semiconductor, the TFT performance must be reviewed for different combinations of substrates, fabrication conditions, and the choice of the gate dielectric in order to achieve the optimum TFT and circuit characteristics. We have fabricated and characterized organic TFTs based on the small-molecule organic semiconductor 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene in combination with an ultrathin hybrid gate dielectric consisting of aluminum oxide and a self-assembled monolayer. Fluoroalkylphosphonic acids with chain lengths ranging from 6 to 14 carbon atoms have been used to form the self-assembled monolayer in the gate dielectric, and their influence on the TFT characteristics has been studied. By optimizing the fabrication conditions, a turn-on voltage of 0 V with an on/off current ratio above 10⁶ has been achieved, in combination with charge-carrier mobilities up to 0.4 cm²/V s on flexible plastic substrates and 1 cm²/V s on silicon substrates.

Addition of the Lewis Acid Zn(C6 F5 )2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V-1 s-1

Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C₆ F₅ )₃ ] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C₆ F₅ )₃ with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C₆ F₅ )₂ ] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene-benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C₆ F₅ )₂ acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm² V^-1 s^-1 . The work not only highlights Zn(C₆ F₅ )₂ as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.

A New Architecture for Fibrous Organic Transistors Based on a Double-Stranded Assembly of Electrode Microfibers for Electronic Textile Applications

Herein, a unique device architecture is proposed for fibrous organic transistors based on a double-stranded assembly of electrode microfibers for electronic textile applications. A key feature of this work is that the semiconductor channel of the fiber transistor comprises a twist assembly of the source and drain electrode microfibers that are coated by an organic semiconductor. This architecture not only allows the channel dimension of the device to be readily controlled by varying the thickness of the semiconductor layer and the twisted length of the two electrode microfibers, but also passivates the device without affecting interconnections with other electrical components. It is found that the control of crystalline nanostructure of the semiconductor layer is critical for improving both the production yield of the device and the charge-carrier transport in the device. The resulting fibrous organic transistors show a high output current of over -5 mA at a low operation voltage of -1.3 V and a good on/off current ratio of 10⁵ . The device performance is maintained after repeated bending deformation and washing with a strong detergent solution. Application of the fibrous organic transistors to switch current-driven LED devices and detection of electrocardiography signals from a human body are demonstrated.

Old Molecule, New Chemistry: Exploring Silicon Phthalocyanines as Emerging N-Type Materials in Organic Electronics

Efficient synthesis of silicon phthalocyanines (SiPc) eliminating the strenuous reaction conditions and hazardous reagents required by classical methods is described. Implementation into organic thin-film transistors (OTFTs) affords average electron field-effect mobility of 3.1 × 10^-3 cm² V^-1 s^-1 and threshold voltage of 25.6 V for all synthetic routes. These results demonstrate that our novel chemistry can lead to high performing SiPc-based n-type OTFTs.

Molecularly Aligned Hexa- peri-hexabenzocoronene Films by Brush-Coating and Their Application in Thin-Film Transistors

The facile Chinese brush-coating method was used to prepare oriented thin films of hexa- peri-hexabenzocoronene (HBC) derivatives on the silicon substrate. As a result of the directional solution-coating, the D_{3 h}-symmetry (HBC-1,3,5-Ph-C12) and the C₁-symmetry (HBC-1,2,4-Ph-C12) derivatives displayed an anisotropic alignment, with mostly edge-on orientation on SiO₂ surfaces modified with various silane-based monolayers. On these silane-modified surfaces, the higher symmetry molecule HBC-1,3,5-Ph-C12 developed a hexagonally packed superstructure, which provided greater π orbital overlap and presumably the electronic coupling between neighboring molecules. In particular, the use of an octyltrichlorosilane (OTS)-modified surface enabled brush-coated thin films to have higher anisotropic orientation, crystallinity, and favorable molecular arrangement. In contrast, the growth of the hexagonal packing of low-symmetry derivative HBC-1,2,4-Ph-C12 was only achieved on the phenyltrichlorosilane and OTS surfaces. Thin-film transistors based on these brush-coated films gave a maximum mobility of 0.1 and 0.056 cm² V^-1 s^-1, which are 2 orders of magnitude improvement over the devices with unoriented films prepared by spin-coating. The results indicate that the molecular packing of discotic liquid crystals on the silane-modified surface is sensitively influenced by the molecular symmetry, which affects intermolecular interactions as well as molecule/surface interactions. This study provides a simple way to fabricate aligned films for HBC derivatives for transistor application.

BODIPY-Based Semiconducting Materials for Organic Bulk Heterojunction Photovoltaics and Thin-Film Transistors

The rapid emergence of organic (opto)electronics as a promising alternative to conventional (opto)electronics has been achieved through the design and development of novel π-conjugated systems. Among various semiconducting structural platforms, 4,4-difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) π-systems have recently attracted attention for use in organic thin-films transistors (OTFTs) and organic photovoltaics (OPVs). This Review article provides an overview of the developments in the past 10 years on the structural design and synthesis of BODIPY-based organic semiconductors and their application in OTFT/OPV devices. The findings summarized and discussed here include the most recent breakthroughs in BODIPYs with record-high charge carrier mobilities and power conversion efficiencies (PCEs). The most up-to-date design rationales and discussions providing a strong understanding of structure-property-function relationships in BODIPY-based semiconductors are presented. Thus, this review is expected to inspire new research for future materials developments/applications in this family of molecules.

Investigating the Thermal Stability of Organic Thin-Film Transistors and Phototransistors Based on [1]-Benzothieno-[3,2-b]-[1]-benzothiophene Dimeric Derivatives

Two new highly thermally stable [1]benzothieno[3,2-b][1]benzothiophene (BTBT) dimeric derivatives, namely 1,4-bis([1]benzothieno[3,2-b][1]benzothiophene-2-yl)benzene (BTBT-Ph-BTBT) and 4,4'-bis([1]benzothieno[3,2-b][1]benzothiophene-2-yl)-1,1'-biphenyl (BTBT-DPh-BTBT), were synthesized by combining two simple fragment structures. Compared to the monomer compound 2-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT, μ_max =3.4×10^-2  cm²  V^-1  s^-1 ), the organic thin-film transistors (OTFTs) based on BTBT-Ph-BTBT and BTBT-DPh-BTBT showed significantly higher mobility (up to 2.5 and 3.6 cm²  V^-1  s^-1 for BTBT-Ph-BTBT and BTBT-DPh-BTBT, respectively). The mobility of OTFTs based on BTBT-Ph-BTBT was kept at a high value (2.4×10^-1  cm²  V^-1  s^-1 ) after the devices were thermally annealed at 350 °C. Furthermore, the organic phototransistors (OPTs) based on BTBT-Ph-BTBT and BTBT-DPh-BTBT displayed high photosensitivities in a range of 250-400 nm with a low intensity, making these materials potentially applicable for sensitive optoelectronic devices.

Difluorobenzothiadiazole and Selenophene-Based Conjugated Polymer Demonstrating an Effective Hole Mobility Exceeding 5 cm2 V-1 s-1 with Solid-State Electrolyte Dielectric

We report synthesis of a new poly(4-(4,4-bis(2-ethylhexyl)-4 H-silolo[3,2- b:4,5- b']dithiophene-2-yl)-7-(4,4-bis(2-ethylhexyl)-6-(selenophene-2-yl)-4 H-silolo[3,2- b:4,5- b']dithiophene-2-yl)-5,6-difluorobenzo[ c][1,2,5]thiadiazole (PDFDSe) polymer based on planar 4,7-bis(4,4-bis(2-ethylhexyl)-4 H-silolo[3,2- b:4,5- b']dithiophen-2-yl)-5,6-difluorobenzo[ c][1,2,5]thiadiazole (DFD) moieties and selenophene linkages. The planar backboned PDFDSe polymer exhibits highest occupied molecular orbital and lowest unoccupied molecular orbital levels of -5.13 and -3.56 eV, respectively, and generates well-packed highly crystalline states in films with exclusive edge-on orientations. PDFDSe thin film was incorporated as a channel material in top-gate bottom-contact organic thin-film transistor with a solid-state electrolyte gate insulator (SEGI) composed of poly(vinylidene difluoride-trifluoroethylene)/poly(vinylidene fluoride- co-hexafluroropropylene)/1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, which exhibited a remarkably high hole mobility up to μ = 20.3 cm² V^-1 s^-1 corresponding to effective hole mobility exceeding 5 cm² V^-1 s^-1 and a very low threshold voltage of -1 V. These device characteristics are associated with the high carrier density in the semiconducting channel region, induced by the high capacitance of the SEGI layer. The excellent carrier mobility from the PDFDSe/SEGI device demonstrates a great potential of semiconducting polymer thin-film transistors as electronic components in future electronic applications.

High-Performance, Ultrathin, Ultraflexible Organic Thin-Film Transistor Array Via Solution Process

Ultrathin organic thin-film transistors (OTFTs) have received extensive attention due to their outstanding advantages, such as extreme flexibility, good conformability, ultralight weight, and compatibility with low-cost and large-area solution-processed techniques. However, compared with the rigid substrates, it still remains a challenge to fabricate high-performance ultrathin OTFTs. In this study, a high-performance ultrathin 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) OTFT array is demonstrated via a simple spin-coating method, with mobility as high as 11 cm2 V-1 s-1 (average mobility: 7.22 cm2 V-1 s-1 ), on/off current ratio of over 106 , switching current of >1 mA, and a good yield ratio as high as 100%. The ultrathin thickness at ≈380 nm and the ultralight weight at ≈0.89 g m-2 enable the free-standing OTFTs to imperceptibly adhere onto human skin, and even a damselfly wing without affecting its flying. More importantly, the OTFTs show good electrical characteristics and mechanical stability when conformed onto the curved surfaces and even folded in a book after 100 folding cycles. These results illustrate the broad application potential of this simply fabricated ultrathin OTFT in next-generation electronics such as foldable displays and wearable devices.

Thiazole Imide-Based All-Acceptor Homopolymer: Achieving High-Performance Unipolar Electron Transport in Organic Thin-Film Transistors

High-performance unipolar n-type polymer semiconductors are critical for advancing the field of organic electronics, which relies on the design and synthesis of new electron-deficient building blocks with good solubilizing capability, favorable geometry, and optimized electrical properties. Herein, two novel imide-functionalized thiazoles, 5,5'-bithiazole-4,4'-dicarboxyimide (BTzI) and 2,2'-bithiazolothienyl-4,4',10,10'-tetracarboxydiimide (DTzTI), are successfully synthesized. Single crystal analysis and physicochemical study reveal that DTzTI is an excellent building block for constructing all-acceptor homopolymers, and the resulting polymer poly(2,2'-bithiazolothienyl-4,4',10,10'-tetracarboxydiimide) (PDTzTI) exhibits unipolar n-type transport with a remarkable electron mobility (μ_e ) of 1.61 cm² V^-1 s^-1 , low off-currents (I_off ) of 10^-10 -10^-11 A, and substantial current on/off ratios (I_on /I_off ) of 10⁷ -10⁸ in organic thin-film transistors. The all-acceptor homopolymer shows distinctive advantages over prevailing n-type donor-acceptor copolymers, which suffer from ambipolar transport with high I_off s > 10^-8 A and small I_on /I_off s < 10⁵ . The results demonstrate that the all-acceptor approach is superior to the donor-acceptor one, which results in unipolar electron transport with more ideal transistor performance characteristics.

2,1,3-Benzothiadiazole-5,6-dicarboxylicimide-Based Polymer Semiconductors for Organic Thin-Film Transistors and Polymer Solar Cells

A series of polymer semiconductors incorporating 2,1,3-benzothiadiazole-5,6-dicarboxylicimide (BTZI) as strong electron-withdrawing unit and an alkoxy-functionalized head-to-head linkage containing bithiophene or bithiazole as highly electron-rich co-unit are designed and synthesized. Because of the strong intramolecular charge transfer characteristics, all three polymers BTZI-TRTOR (P1), BTZI-BTOR (P2), and BTZI-BTzOR (P3) exhibit narrow bandgaps of 1.13, 1.05, and 0.92 eV, respectively, resulting in a very broad absorption ranging from 350 to 1400 nm. The highly electron-deficient 2,1,3-benzothiadiazole-5,6-dicarboxylicimide and alkoxy-functionalized bithiophene (or thiazole) lead to polymers with low-lying lowest unoccupied molecular orbitals (-3.96 to -4.28 eV) and high-lying highest occupied molecular orbitals (-5.01 to -5.20 eV). Hence, P1 and P3 show substantial and balanced ambipolar transport with electron mobilities/hole mobilities of up to 0.86/0.51 and 0.95/0.50 cm² V^-1 s^-1, respectively, and polymer P2 containing the strongest donor unit exhibited unipolar p-type performance with an average hole mobility of 0.40 cm² V^-1 s^-1 in top-gate/bottom-contact thin-film transistors with gold as the source and drain electrodes. When incorporated into bulk heterojunction polymer solar cells, the narrow bandgap (1.13 eV) polymer P1 shows an encouraging power conversion efficiency of 4.15% with a relatively large open-circuit voltage of 0.69 V, which corresponds to a remarkably small energy loss of 0.44 eV. The power conversion efficiency of P1 is among the highest reported to date with such a small energy loss in polymer:fullerene solar cells.

π-Extended Isoindigo-Based Derivative: A Promising Electron-Deficient Building Block for Polymer Semiconductors

The exploration of novel electron-deficient building blocks is a key task for developing high-performance polymer semiconductors in organic thin-film transistors. In view of the situation of the lack of strong electron-deficient building blocks, we designed two novel π-extended isoindigo-based electron-deficient building blocks, IVI and F₄IVI. Owing to the strong electron-deficient nature and the extended π-conjugated system of the two acceptor units, their copolymers, PIVI2T and PF₄IVI2T, containing 2,2'-bithiophene donor units, are endowed with deep-lying highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) energy levels and strong intermolecular interactions. In comparison to PIVI2T, the fluorinated PF₄IVI2T exhibits stronger intra- and intermolecular interactions, lower HOMO/LUMO energy levels up to -5.74/-4.17 eV, and more ordered molecular packing with a smaller π-π stacking distance of up to 3.53 Å, resulting in an excellent ambipolar transporting behavior and a promising application in logic circuits for PF₄IVI2T in ambient with hole and electron mobilities of up to 1.03 and 1.82 cm² V^-1 s^-1, respectively. The results reveal that F₄IVI is a promising and strong electron-deficient building unit to construct high-performance semiconducting polymers, which provides an insight into the structure-property relationships for the exploration and molecular engineering of excellent electron-deficient building blocks in the field of organic electronics.

Asymmetric Conjugated Molecules Based on [1]Benzothieno[3,2-b][1]benzothiophene for High-Mobility Organic Thin-Film Transistors: Influence of Alkyl Chain Length

Herein, we report the synthesis and characterization of a series of [1]benzothieno[3,2-b][1]benzothiophene (BTBT)-based asymmetric conjugated molecules, that is, 2-(5-alkylthiophen-2-yl)[1]benzothieno[3,2-b][1]benzothiophene (BTBT-Tn, in which T and n represent thiophene and the number of carbons in the alkyl group, respectively). All of the molecules with n ≥ 4 show mesomorphism and display smectic A, smectic B (n = 4), or smectic E (n > 4) phases and then crystalline phases in succession upon cooling from the isotropic state. Alkyl chain length has a noticeable influence on the microstructures of vacuum-deposited films and therefore on the performance of the organic thin-film transistors (OTFTs). All molecules except for 2-(thiophen-2-yl)[1]benzothieno[3,2-b][1]benzothiophene and 2-(5-ethylthiophen-2-yl)[1]benzothieno[3,2-b][1]benzothiophene showed OTFT mobilities above 5 cm² V^-1 s^-1. 2-(5-Hexylthiophen-2-yl)[1]benzothieno[3,2-b][1]benzothiophene and 2-(5-heptylthiophen-2-yl)[1]benzothieno[3,2-b][1]benzothiophene showed the greatest OTFT performance with reliable hole mobilities (μ) up to 10.5 cm² V^-1 s^-1 because they formed highly ordered and homogeneous films with diminished grain boundaries.

Noncovalent Se···O Conformational Locks for Constructing High-Performing Optoelectronic Conjugated Polymers

Noncovalent conformational locks are broadly employed to construct highly planar π-conjugated semiconductors exhibiting substantial charge transport characteristics. However, current chalcogen-based conformational lock strategies for organic semiconductors are limited to S···X (X = O, N, halide) weak interactions. An easily accessible (minimal synthetic steps) and structurally planar selenophene-based building block, 1,2-diethoxy-1,2-bisselenylvinylene (DESVS), with novel Se···O noncovalent conformational locks is designed and synthesized. DESVS unique properties are supported by density functional theory computed electronic structures, single crystal structures, and experimental lattice cohesion metrics. Based on this building block, a new class of stable, structurally planar, and solution-processable conjugated polymers are synthesized and implemented in organic thin-film transistors (TFT) and organic photovoltaic (OPV) cells. DESVS-based polymers exhibit carrier mobilities in air as high as 1.49 cm² V^-1 s^-1 (p-type) and 0.65 cm² V^-1 s^-1 (n-type) in TFTs, and power conversion efficiency >5% in OPV cells.

Directional Solution Coating by the Chinese Brush: A Facile Approach to Improving Molecular Alignment for High-Performance Polymer TFTs

Directional solution coating by the Chinese brush provides a facile approach to fabricate highly oriented polymer thin films by finely controlling the wetting and dewetting processes under directional stress. The biggest advantage of the Chinese brush over the normal western brush is the freshly emergent hairs used, whose unique tapered structure renders a dynamic balance of the liquid within the brush by multiple forces when interacting with the liquid. Consequently, the liquid is steadily held within the brush without any unexpected leakage, making the liquid transfer proceed in a well-controllable manner. It is demonstrated that the Chinese brush coating enables the crystallization of the polymer and the self-assembly of conjugated backbones to proceed in a quasi-steady state via a certain direction, which is attributed to the controllable receding of the three-phase contact line during the dewetting process by the multiple parallel freshly emergent hairs. The as-prepared polymer thin films exhibit over six times higher charge-carrier mobility compared to the spin-coated films, which therefore provides a general approach for high-performance organic thin-film transistors.

UV-Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection

A new type of nitrogen dioxide (NO₂ ) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low-cost UV-ozone (UVO)-treated polymeric gate dielectric is reported here. The NO₂ sensitivity of these TFTs with the dielectric surface UVO treatment is ≈400× greater for [NO₂ ] = 30 ppm than for those without UVO treatment. Importantly, the sensitivity is ≈50× greater for [NO₂ ] = 1 ppm with the UVO-treated TFTs, and a limit of detection of ≈400 ppb is achieved with this sensing platform. The morphology, microstructure, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, revealing that the enhanced sensing performance originates from UVO-derived hydroxylated species on the dielectric surface and not from chemical reactions between NO₂ and the dielectric/semiconductor components. This work demonstrates that dielectric/semiconductor interface engineering is essential for readily manufacturable high-performance TFT-based gas sensors.

Growth Of Organic Semiconductor Thin Films with Multi-Micron Domain Size and Fabrication of Organic Transistors Using a Stencil Nanosieve

To grow small molecule semiconductor thin films with domain size larger than modern-day device sizes, we evaporate the material through a dense array of small apertures, called a stencil nanosieve. The aperture size of 0.5 μm results in low nucleation density, whereas the aperture-to-aperture distance of 0.5 μm provides sufficient crosstalk between neighboring apertures through the diffusion of adsorbed molecules. By integrating the nanosieve in the channel area of a thin-film transistor mask, we show a route for patterning both the organic semiconductor and the metal contacts of thin-film transistors using one mask only and without mask realignment.

Understanding the Crystal Packing and Organic Thin-Film Transistor Performance in Isomeric Guest-Host Systems

In order to understand how additives influence the structure and electrical properties of active layers in thin-film devices, a compositionally identical but structurally different guest-host system based on the syn and anti isomers of triethylsilylethynyl anthradithiophene (TES ADT) is systematically explored. The mobility of organic thin-film transistors (OTFTs) comprising anti TES ADT drops with the addition of only 0.01% of the syn isomer and is pinned at the mobility of OTFTs having pure syn isomer after the addition of only 10% of the isomer. As the syn isomer fraction increases, intermolecular repulsion increases, resulting in a decrease in the unit-cell density and concomitant disordering of the charge-transport pathway. This molecular disorder leads to an increase in charge trapping, causing the mobility of OTFTs to drop with increasing syn-isomer concentration. Since charge transport is sensitive to even minute fractions of molecular disorder, this work emphasizes the importance of prioritizing structural compatibility when choosing material pairs for guest-host systems.

Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces

Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic-inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor-dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.

Benzothiadiazole-Based Small-Molecule Semiconductors for Organic Thin-Film Transistors and Complementary-like Inverters

New benzothiadiazole derivatives, 4,7-bis(5-phenylthiophen-2-yl)benzo[c][1,2,5]thiadiazole (PT-BTD) and 4,7-bis[4-(thiophen-2-yl)phenyl]benzo[c][1,2,5]thiadiazole (TP-BTD), were synthesized and characterized as small-molecule organic semiconductors for organic thin-film transistors (OTFTs) and complementary inverters. The thermal, optical, and electrochemical properties of the new compounds were fully characterized. Vacuum-deposition and solution-shearing methods were used to fabricate thin films based on these compounds. Thin films based on PT-BTD exhibited p-channel characteristics with hole mobilities as high as 0.10 cm²  V^-1  s^-1 and current on/off ratios >10⁷ for top-contact/bottom-gate OTFT devices. With an optimized blending ratio of PT-BTD and the representative n-channel semiconductor N,N'-1H,1H-perfluorobutyl dicyanoperylenediimide, bulk heterojunction ambipolar transistors were fabricated with balanced hole and electron mobilities of 0.10 and 0.07 cm²  V^-1  s^-1 , respectively. Furthermore, a complementary-like inverter was fabricated using ambipolar thin-film transistors, which showed a high voltage gain of 84.

Instantaneous Pulsed-Light Cross-Linking of a Polymer Gate Dielectric for Flexible Organic Thin-Film Transistors

We report the instantaneous pulsed-light cross-linking of polymer gate dielectrics on a flexible substrate by using intensely pulsed white light (IPWL) irradiation. Irradiation with IPWL for only 1.8 s of a poly(4-vinylphenol) (PVP) thin film with the cross-linking agent poly(melamine-co-formaldehyde) (PMF) deposited on a plastic substrate was found to yield fully cross-linked PVP films. It was confirmed that the IPWL-cross-linked PVP films have smooth pinhole-free surfaces and exhibit a low leakage current density, organic solvent resistance, and good compatibility with organic semiconductor, and that they can be used as replacements for typical PVP dielectrics that are cross-linked with time and energy intensive thermal heating processes. The synchronization of the IPWL irradiation with substrate transfer was found to enable the preparation of cross-linked PVP films on large area substrates with a highly uniform capacitance. Flexible OTFT based on IPWL-cross-linked PVP dielectrics were found to exhibit good electrical performance that is comparable to that of devices with thermally cross-linked PVP dielectric, as well as excellent deformation stability even at a bending radius of 3 mm.